Silicon material processing equipment and methods

Abstract

This invention provides a silicon material processing device and a silicon material processing method. The silicon material processing device includes: a vibration dust removal mechanism for vibrating and removing dust from the silicon material; an ultrasonic cleaning mechanism located downstream of the vibration dust removal mechanism to receive the silicon material from the vibration dust removal mechanism and perform ultrasonic cleaning on it; a hydrogen removal mechanism located downstream of the ultrasonic cleaning mechanism for removing hydrogen from the ultrasonically cleaned silicon material; and a cooling mechanism located downstream of the hydrogen removal mechanism for cooling the silicon material from the hydrogen removal mechanism. The silicon material processing device according to embodiments of this invention can efficiently remove micro-dust from the surface of the silicon material by combining vibration dust removal and ultrasonic cleaning, and remove surface hydrogen by combining the hydrogen removal mechanism. After hydrogen removal, the silicon material is rapidly cooled by the cooling mechanism, which can prevent further oxidation of the silicon material.

Description

Technical Field

[0001] This invention relates to the field of photovoltaic technology, specifically to a silicon material processing equipment and a silicon material processing method. Background Technology

[0002] As a new type of material source for the photovoltaic industry, granular silicon is spherical in shape with a small particle size, which means that its surface area is larger than that of ordinary bulk silicon. During production, packaging and transportation, a lot of nanoscale dust is generated. It cannot be removed by screening, so it will be concentrated during the pouring of granular silicon, mainly in the barrel filling stage (pouring the material into the quartz cylinder) and the multiple feeding steps in the furnace (pouring from the quartz cylinder into the single crystal furnace). During the barrel filling stage, silicon powder smokes and adheres to the inner wall of the quartz feeding cylinder. It is carried out again during multiple feedings. When the quartz cylinder is discharged, the silicon powder remains in a dusty state and is adsorbed at the throat of the single crystal furnace and other parts, affecting the formation of single crystals.

[0003] Furthermore, due to its manufacturing process, granular silicon contains hydrogen bonds. When exposed to high temperatures, these bonds are released instantly, carrying away the molten silicon and causing a hydrogen splatter phenomenon. The small particles that splash out can enter the negative pressure pipe with the airflow, damaging the bellows and causing gas leakage in the single crystal furnace. In severe cases, this can lead to furnace shutdown or even more serious accidents. Summary of the Invention

[0004] In view of this, the present invention provides a silicon material processing device that can effectively remove powder and hydrogen from silicon material.

[0005] The present invention also provides a method for processing silicon material having the above-described silicon material processing equipment.

[0006] To solve the above-mentioned technical problems, the present invention adopts the following technical solution:

[0007] A silicon material processing apparatus according to a first aspect embodiment of the present invention includes:

[0008] A vibration dust removal mechanism is used to remove dust from silicon material through vibration.

[0009] An ultrasonic cleaning unit is located downstream of the vibration dust removal unit to receive silicon material from the vibration dust removal unit and perform ultrasonic cleaning on it.

[0010] A hydrogen removal mechanism is located downstream of the ultrasonic cleaning mechanism and is used to heat and remove hydrogen from the ultrasonically cleaned silicon material.

[0011] A cooling mechanism, located downstream of the hydrogen removal mechanism, is used to cool the silicon material from the hydrogen removal mechanism.

[0012] Furthermore, the vibration dust removal mechanism includes:

[0013] A vibration device, used to cause the silicon material to vibrate in order to release micro-dust;

[0014] A suction device is provided relative to the vibration device to remove the dust particles.

[0015] Furthermore, the vibration device includes:

[0016] A sieve, used to receive and sieve silicon material to be processed;

[0017] A vibrator connected to the screen is used to drive the screen to vibrate, causing the silicon material on the screen to vibrate and release micro-dust.

[0018] Furthermore, the suction device includes:

[0019] An upper suction hood is disposed above the screen.

[0020] A lower suction hood is disposed below the screen.

[0021] The first suction pipe has one end positioned above the screen and connected to the upper suction hood.

[0022] The second suction pipe has one end positioned below the screen and connected to the lower suction hood.

[0023] A dust removal fan is provided, wherein the dust removal fan is connected to the upper suction hood via a first suction pipe and to the lower suction hood via a second suction pipe, in order to remove the fine dust.

[0024] Furthermore, the vibration device also includes:

[0025] A feeding section, one end of which is used to receive silicon material and the other end is connected to the screen to transfer the silicon material to the screen.

[0026] The discharge section has one end connected to the screen and the other end forming a feeding port, which is used to convey the silicon material processed by the vibration dust removal mechanism to the ultrasonic cleaning mechanism.

[0027] The feeding section, the screen, and the discharging section are all configured to slope downwards from upstream to downstream.

[0028] Furthermore, the ultrasonic cleaning mechanism includes:

[0029] A cleaning tank is located downstream of the discharge section. The cleaning tank has an internal cavity and is connected to an inlet pipe and a drain pipe.

[0030] A material bin is disposed within the receiving cavity, and a filter screen is installed inside the material bin. The material bin is used to receive silicon material from the discharge section.

[0031] An ultrasonic vibration device is connected to the cleaning tank to ultrasonically clean the silicon material on the filter screen while the filter screen vibrates.

[0032] Furthermore, the silicon material processing equipment also includes a material bin moving mechanism, the material bin moving mechanism comprising:

[0033] A support frame is mounted above the cleaning tank, and a pair of parallel guide rails are provided on opposite sides of the top surface of the support frame.

[0034] A horizontal translation module, which is located at the top of the support frame and can move linearly along the guide rail;

[0035] A vertical translation module is connected to the bottom surface of the horizontal translation module, and the hopper is connected to the vertical translation module to move up and down with the vertical translation module;

[0036] Four slide rails, the top ends of the four slide rails are connected to the bottom surface of the horizontal translation module, and the four slide rails are respectively located at the four corners of the material box. The vertical translation module is connected to the four slide rails respectively to move up and down along the slide rails.

[0037] A drive unit is provided, which connects the horizontal translation module and the vertical translation module to control the movement of the horizontal translation module and the vertical translation module.

[0038] Furthermore, the lower end of the material box near the hydrogen removal mechanism is provided with a discharge port, and the ultrasonic cleaning mechanism further includes:

[0039] Two first slings, the upper ends of the two first slings are connected to the vertical translation module and the lower ends are connected to the side of the filter screen near the dust removal fan;

[0040] Two second slings, the upper ends of which are connected to the vertical translation module and the lower ends of which are connected to the side of the filter screen closest to the hydrogen removal mechanism.

[0041] By controlling the lifting of the two first slings and lowering the two second slings simultaneously through the drive unit, the filter screen can be tilted and brought closer to the discharge port corresponding to the side of the hydrogen removal mechanism, so that the silicon material can be output from the discharge port.

[0042] Furthermore, the silicon material processing equipment also includes:

[0043] A hot air blower is disposed within the support frame relative to the material box to blow hot air onto the filter screen.

[0044] Furthermore, the hydrogen removal mechanism includes:

[0045] A first support base and a second support base are disposed opposite to each other;

[0046] A heating box, wherein the first end of the heating box is disposed on the first support base and the second end is disposed on the second support base, the heating box is provided with a feeding port near the first end and a discharge port that can be opened / closed near the second end, wherein the height of the first end of the heating box is higher than the height of the second end, a cavity is formed inside the heating box, and an air outlet is also formed on the side wall of the heating box.

[0047] One or more heating tubes are disposed inside the cavity of the heating chamber to heat the silicon material inside the heating chamber;

[0048] A first receiving tube, one end of which is connected to the feeding port and the other end is retractable. When the first receiving tube is extended, it is connected to the discharge port of the material box to receive silicon material from the material box.

[0049] A first displacement cylinder, one end of which is connected to the first support base and the other end of which is connected to the free end of the first receiving pipe to drive the first receiving pipe to extend or retract.

[0050] The carrier is located inside the cavity of the heating box and is rotatably mounted on the first support and the second support at both ends;

[0051] A rotary motor is mounted on the first support and connected to the rotation shaft of the carrier to drive the carrier to rotate.

[0052] The second displacement cylinder is mounted on the second support base and its output end is connected to a sealing plate. The sealing plate moves under the drive of the second displacement cylinder to open / close the discharge port.

[0053] Furthermore, the cooling mechanism includes:

[0054] The second receiving pipe has one end connected to the discharge port;

[0055] A cooling box is connected to the other end of the second receiving pipe for feeding, and the cooling box is provided with an openable / closeable discharge port;

[0056] A turntable is provided inside the cooling box and is equipped with stirring blades for stirring and accelerating cooling.

[0057] Furthermore, the cooling box has a liquid argon inlet and an exhaust outlet, the heating box has an air inlet, and the exhaust outlet of the cooling box is connected to the air inlet of the heating box.

[0058] Furthermore, it also includes a weighing device, which is located below the discharge port to receive the discharge and is equipped with a signal transmitting device to control the opening / closing of the discharge port.

[0059] According to a second aspect of the present invention, a silicon material processing method using the silicon material processing equipment described in any of the first aspects above includes the following steps:

[0060] Step S1: Add silicon material to the vibration dust removal mechanism and vibrate the silicon material to remove dust;

[0061] Step S2: The silicon material after vibration dust removal is introduced into the ultrasonic cleaning mechanism, and the silicon material is ultrasonically cleaned.

[0062] Step S3: After the ultrasonic cleaning time is predetermined, the silicon material is introduced into the hydrogen removal mechanism to heat the silicon material to remove hydrogen. The heating temperature is 900-1100℃.

[0063] Step S4: The heated silicon material is introduced into a cooling mechanism for cooling to obtain the treated silicon material.

[0064] Furthermore, while vibrating the silicon material to remove dust, negative pressure suction is applied to remove the generated micro-dust.

[0065] Furthermore, vibration is performed during ultrasonic cleaning, and the ultrasonically cleaned silicon material is drained, dried with hot air, and then introduced into the hydrogen removal mechanism.

[0066] Furthermore, liquid argon is introduced into the cooling mechanism to cool the silicon material, and the argon gas after heat exchange is introduced into the hydrogen removal mechanism for inert gas atmosphere protection.

[0067] The above-described technical solution of the present invention has at least one of the following beneficial effects:

[0068] According to an embodiment of the present invention, the silicon material processing equipment, by setting a vibration dust removal mechanism, enables the silicon material to detach from the dust and impurities adhering to its surface through relative movement. Subsequently, an ultrasonic cleaning mechanism located downstream of the vibration dust removal mechanism receives the silicon material from the vibration dust removal mechanism and performs ultrasonic cleaning on it. The ultrasonic cleaning mechanism uses ultrasonic waves to generate numerous tiny bubbles in the liquid. The shock waves and micro-jet streams generated after the bubbles burst further remove strongly adhered dust and impurities from the silicon material surface, while also penetrating deep into the capillaries to clean the interior of the silicon material. After these two steps of vibration dust removal and ultrasonic cleaning, the dust and impurities adsorbed on the silicon material can be significantly removed. Next, a hydrogen removal mechanism located downstream of the ultrasonic cleaning mechanism removes hydrogen from the ultrasonically cleaned silicon material, breaking the hydrogen bonds and achieving a hydrogen removal effect. Finally, by placing a cooling mechanism downstream of the hydrogen removal mechanism, the silicon material from the hydrogen removal mechanism is cooled, preventing further oxidation of the silicon material and facilitating subsequent operations and storage. The silicon material processing equipment of the present invention, performing the above-described silicon material processing sequentially, effectively solves the problems of unscreened and unremoved silicon dust and high-temperature hydrogen spurts in silicon material. Attached Figure Description

[0069] Figure 1 This is a top view of the silicon material processing equipment according to an embodiment of the present invention;

[0070] Figure 2 This is a three-dimensional structural diagram of the silicon material processing equipment according to an embodiment of the present invention;

[0071] Figure 3 This is a partial structural schematic diagram of a silicon material processing device according to an embodiment of the present invention;

[0072] Figure 4 This is another partial structural schematic diagram of the silicon material processing equipment according to an embodiment of the present invention;

[0073] Figure 5 This is a cross-sectional schematic diagram of the carrier in the silicon material processing equipment according to an embodiment of the present invention;

[0074] Figure 6 This is a partial cross-sectional schematic diagram of the hydrogen removal mechanism and the cooling mechanism in the silicon material processing equipment according to an embodiment of the present invention;

[0075] Figure 7 for Figure 6 A schematic diagram of the rotating disc and stirring blades in the intermediate cooling mechanism.

[0076] Reference numerals: 100. Vibration dust removal mechanism; 110. Vibration device; 111. Screen; 112. Vibrator; 113. Feeding section; 114. Discharge section; 120. Suction device; 121. Upper suction hood; 122. Lower suction hood; 123. First suction pipe; 124. Second suction pipe; 125. Dust removal suction fan;

[0077] 200. Ultrasonic cleaning mechanism; 210. Cleaning tank; 211. Water inlet pipe; 212. Drain pipe; 220. Material bin; 221. Filter screen; 230. Ultrasonic vibration device; 240. Discharge port; 250. First lifting sling; 260. Second lifting sling;

[0078] 300. Hydrogen removal mechanism; 310. First support base; 320. Second support base; 330. Heating box; 331. Gas outlet; 332. Gas inlet; 340. Heating tube; 350. First receiving pipe; 360. First displacement cylinder; 370. Bearing device; 380. Rotary motor; 390. Second displacement cylinder;

[0079] 400. Cooling mechanism; 410. Second receiving pipe; 420. Cooling box; 421. Discharge port; 430. Turntable; 431. Stirring blades; 432. Exhaust port; 433. Liquid argon inlet;

[0080] 500. Material box moving mechanism; 510. Support frame; 511. Guide rail; 520. Horizontal translation module; 530. Vertical translation module; 540. Slide rail; 550. Drive unit;

[0081] 600. Hot air blower;

[0082] 700. Weighing device. Detailed Implementation

[0083] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the described embodiments of the present invention are within the scope of protection of the present invention.

[0084] Unless otherwise defined, the technical or scientific terms used in this invention shall have the ordinary meaning understood by one of ordinary skill in the art to which this invention pertains. The terms "first," "second," and similar terms used in this invention do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms "an" or "a" and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms "connected" or "linked" and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up," "down," "left," "right," etc., are used only to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship also changes accordingly.

[0085] The silicon material processing apparatus according to the first aspect of the present invention will now be described in detail with reference to the accompanying drawings.

[0086] Specifically, such as Figures 1 to 7 As shown, the silicon material processing equipment provided in this embodiment of the invention may include: a vibration dust removal mechanism 100, an ultrasonic cleaning mechanism 200, a hydrogen removal mechanism 300, and a cooling mechanism 400.

[0087] Among them, reference Figures 1 to 2 The vibration dust removal mechanism 100 is used to remove dust from the silicon material through vibration. The ultrasonic cleaning mechanism 200 is located downstream of the vibration dust removal mechanism 100 to receive the silicon material from the vibration dust removal mechanism 100 and perform ultrasonic cleaning on it. The hydrogen removal mechanism 300 is located downstream of the ultrasonic cleaning mechanism 200 and is used to heat and remove hydrogen from the ultrasonically cleaned silicon material. The cooling mechanism 400 is located downstream of the hydrogen removal mechanism 300 and is used to cool the silicon material from the hydrogen removal mechanism 300.

[0088] Specifically, refer to Figures 1 to 2 According to the silicon material processing equipment of the present invention, by setting a vibration dust removal mechanism 100, the silicon material and the dust and impurities adhering to the surface can be moved relative to each other and fall off, which is the first step of dust removal.

[0089] Subsequently, the ultrasonic cleaning mechanism 200, located downstream of the vibration dust removal mechanism 100, receives the silicon material from the vibration dust removal mechanism 100 and performs ultrasonic cleaning on it. The ultrasonic cleaning mechanism 200 generates a large number of tiny bubbles in the liquid by means of ultrasonic wave propagation. After the bubbles burst, the resulting shock waves and micro-jet jets hit the surface of the silicon material to further remove strongly attached dust and impurities. At the same time, it can also penetrate deep into the capillaries to clean the inside of the silicon material. This is the second step of dust removal.

[0090] The first stage of vibration dust removal and the second stage of ultrasonic dust removal can significantly remove dust and impurities adsorbed on the silicon material.

[0091] After the dust removal process is completed, the hydrogen removal mechanism 300, located downstream of the ultrasonic cleaning mechanism 200, heats the silicon material after ultrasonic cleaning to break the hydrogen bonds on the silicon material and achieve the hydrogen removal effect.

[0092] Finally, by placing the cooling mechanism 400 downstream of the hydrogen removal mechanism 300 to cool the silicon material from the hydrogen removal mechanism 300, it is possible not only to prevent the heated silicon material from further oxidizing at high temperatures, but also to facilitate subsequent operations and storage after cooling.

[0093] Thus, through the coordinated action of the vibration dust removal mechanism 100, the ultrasonic cleaning mechanism 200, the hydrogen removal mechanism 300, and the cooling mechanism 400, a continuous processing flow is formed, which can effectively solve the problems of silicon material dust that cannot be screened out and the high-temperature hydrogen jump of silicon material. In addition, the setting of the cooling mechanism 400 also solves the problem of subsequent cooling and repackaging.

[0094] In some embodiments of the present invention, such as Figure 2 As shown, the vibration dust removal mechanism 100 includes a vibration device 110 and a suction device 120.

[0095] The vibration device 110 is used to vibrate the silicon material to release micro-dust; the suction device 120 is positioned relative to the vibration device 110 to remove the micro-dust. In other words, the vibration device 110 first generates continuous mechanical vibration and transmits the vibration to the silicon material, causing it to dynamically bounce and fully release internal micro-dust. Then, the suction device 120, positioned relative to the vibration device 110, removes the micro-dust released after the silicon material vibrates. Thus, the vibration device 110 and the suction device 120 work together to achieve continuous vibration dust removal from the silicon material in a simple and efficient manner, facilitating subsequent processing.

[0096] In some embodiments of the present invention, such as Figures 2 to 3 As shown, the vibration device 110 includes a screen 111 and a vibrator 112. The screen 111 receives and sieves the silicon material to be processed; the vibrator 112 is connected to the screen 111 and drives the screen 111 to vibrate, causing the silicon material on the screen 111 to vibrate and release micro-dust. In other words, after receiving the silicon material, the screen 111 can first sieve it within a certain particle size range, which helps to remove some dust. Furthermore, after the vibrator 112 is connected to the screen 111, it applies mechanical vibration to the screen 111, causing the silicon material to collide and rub against the screen 111, causing the adsorbed dust to fall off and be further removed. This structure is simple, effective, and easy to operate and maintain.

[0097] In some embodiments of the present invention, such as Figures 2 to 3 As shown, the suction device 120 includes: an upper suction hood 121, a lower suction hood 122, a first suction pipe 123, a second suction pipe 124, and a dust removal suction fan 125.

[0098] The upper suction hood 121 is positioned above the screen 111 to remove dust particles scattered above the screen 111. The lower suction hood 122 is positioned below the screen 111 to remove dust particles scattered below the screen 111. One end of the first suction pipe 123 is positioned above the screen 111 and connected to the upper suction hood 121, while one end of the second suction pipe 124 is positioned below the screen 111 and connected to the lower suction hood 122. The dust removal fan 125 is connected to the upper suction hood 121 via the first suction pipe 123 and to the lower suction hood 122 via the second suction pipe 124 to remove dust particles. The dust removal fan 125 provides suction power to the upper and lower suction hoods 121 and 122, while the first and second suction pipes 123 and 124 respectively discharge the dust particles removed by the upper and lower suction hoods 121 and 122. This allows for a more comprehensive removal of fine dust particles scattered during the vibration of the screen 111, further enhancing the dust removal effect of the vibration dust removal mechanism 100 in conjunction with the vibration device 110, and laying a good foundation for subsequent dust removal operations.

[0099] In some embodiments of the present invention, such as Figures 2 to 3 As shown, the vibration device 110 further includes a feeding section 113 and a discharging section 114. One end of the feeding section 113 receives silicon material, and the other end is connected to a screen 111 to transfer the silicon material to the screen 111. One end of the discharging section 114 is connected to the screen 111, and the other end forms a feeding port for conveying the silicon material processed by the vibration dust removal mechanism 100 to the ultrasonic cleaning mechanism 200. (Refer to...) Figure 3 The feeding section 113, screen 111, and discharge section 114 are all designed to slope downwards from upstream to downstream. This means that the feeding section 113, screen 111, and discharge section 114 utilize gravity through their height difference to achieve continuous feeding and discharging of silicon material. This simplifies the conveying structure, eliminates the need for additional transmission devices, and the silicon material flows from screen 111 into discharge section 114 via vibration on the screen 111, simultaneously flowing downwards to the next dust removal process—the ultrasonic dust removal mechanism. Thus, the entire feeding and discharging process is automated and continuous, simplifying the device structure while ensuring high efficiency. Furthermore, the height difference inherent in the feeding section 113 itself causes separation of silicon material and dust during transport, removing some dust at the beginning of the vibration dust removal process, thereby improving dust removal efficiency.

[0100] In some embodiments of the present invention, reference is made to Figure 2 and Figure 4The ultrasonic cleaning mechanism 200 includes a cleaning tank 210, a material bin 220, and an ultrasonic vibration device 230. The cleaning tank 210 is located downstream of the discharge section 114, and its interior forms a receiving cavity. The cleaning tank 210 is connected to an inlet pipe 211 and a drain pipe 212. The material bin 220 is disposed within the receiving cavity, and a filter screen 221 is mounted inside the material bin 220. The material bin 220 receives silicon material from the discharge section 114. The ultrasonic vibration device 230 is connected to the cleaning tank 210 so that the filter screen 221 vibrates while the silicon material on the filter screen 221 is ultrasonically cleaned.

[0101] In other words, after the silicon material undergoes the first dust removal process, namely the vibration suction mechanism, it enters the filter screen 221 of the material box 220 from the discharge section 114. The ultrasonic vibration device 230 is connected to the cleaning tank 210 to drive the filter screen 221 to vibrate and perform ultrasonic cleaning on the silicon material on the filter screen 221. During the ultrasonic cleaning process, a large number of tiny bubbles are generated in the liquid in the cleaning tank 210. The shock waves and micro-jet streams generated after the bubbles burst further remove the strongly attached dust and impurities from the surface of the silicon material, and can also penetrate deep into the capillaries to clean the inside of the silicon material. It should be noted that before ultrasonic cleaning, water / cleaning fluid is injected into the receiving cavity from the water inlet pipe 211 of the cleaning tank 210 until it is higher than the drain pipe 212. After ultrasonic cleaning, a layer of oil-like silicon powder will form above the water surface in the receiving cavity of the cleaning tank 210. At this time, the oil-like silicon powder on the water surface is discharged through the drain pipe 212. Thus, the second dust removal process of the silicon material processing device, namely ultrasonic cleaning and dust removal, is completed. Compared with vibration suction dust removal, ultrasonic cleaning and dust removal can further remove the silicon powder attached to the silicon material and deeply clean the silicon material.

[0102] In some embodiments of the present invention, reference is made to Figure 4 The silicon material processing equipment also includes a material box moving mechanism 500, which includes: a support frame 510, a horizontal translation module 520, a vertical translation module 530, four slide rails 540, and a drive unit 550.

[0103] The support frame 510 is mounted above the cleaning tank 210, and a pair of parallel guide rails 511 are provided on opposite sides of the top surface of the support frame 510. A horizontal translation module 520 is located at the top of the support frame 510 and can move linearly in the horizontal direction along the guide rails 511. A vertical translation module 530 is connected to the bottom surface of the horizontal translation module 520, and the material box 220 is connected to the vertical translation module to move up and down with the vertical translation module 530. The top ends of four slide rails 540 are connected to the bottom surface of the horizontal translation module 520, and the four slide rails 540 are located at the four corners of the material box 220. The vertical translation module is connected to each of the four slide rails 540 to move up and down along the slide rails 540. A drive unit 550 is connected to the horizontal translation module 520 and the vertical translation module 530 to control their movement.

[0104] In other words, by driving the horizontal translation module 520 to slide and engage with the guide rail 511 via the drive unit 550, the material box 220 can be moved horizontally and linearly above the cleaning tank 210, thereby changing the position of the material box 220 and improving the flexibility of its movement. Furthermore, by driving the vertical translation module 530 to slide and engage with the slide rail 540 via the drive unit 550, vertical movement is achieved through mechanical transmission. This allows the material box 220 to be lifted from the receiving cavity of the cleaning tank 210 for draining. The combination of the vertical translation module 530 and the horizontal translation module 520 allows for omnidirectional adjustment of the material box 220's position. Moreover, the vertical translation module 530 moves along the slide rail 540, which provides excellent guidance, ensuring that the material box 220 accurately reaches the designated position without any positional deviation.

[0105] In some embodiments of the present invention, such as Figure 2 As shown, the lower end of the material bin 220 near the hydrogen removal mechanism 300 has a discharge port 240. The ultrasonic cleaning mechanism 200 also includes two first lifting cables 250 and two second lifting cables 260. (Reference) Figure 4The upper ends of the two first lifting cables 250 are connected to the vertical translation module 530, and the lower ends are connected to the side of the filter screen 221 near the vibration dust removal mechanism 100. The upper ends of the two second lifting cables 260 are connected to the vertical translation module 530, and the lower ends are connected to the side of the filter screen 221 near the hydrogen removal mechanism 300. By driving the two first lifting cables 250 to lift and the two second lifting cables 260 to lower through the drive unit 550, the filter screen 221 can be tilted and positioned near the side of the hydrogen removal mechanism 300 corresponding to the discharge port 240, so that silicon material can be output from the discharge port 240. In other words, by driving the two first lifting cables 250 to lift and the two second lifting cables 260 to release through the drive unit 550, the filter screen 221 is tilted, so that the silicon material on the filter screen 221 flows towards the discharge port 240 for output. Thus, directional control of silicon material output is achieved, with a simple structure and easy operation. In some embodiments of the present invention, for example, limiting parts can be provided on the guide rail 511 and the slide rail 540 respectively to limit the extreme positions of the lateral and vertical movement of the material box 220, thereby automatically realizing the precise alignment of the material box 220 with the downstream hydrogen removal mechanism 300 without the need for manual monitoring and control.

[0106] It should be noted that in some embodiments of this application, the function of the drive unit 550 can be implemented by four motors. The first motor drives the horizontal translation module 520, the second motor drives the vertical translation module 530, the third motor connects to the two first lifting cables 250 to drive their lifting, and the fourth motor connects to the two second lifting cables to drive their lowering. Specifically, the drive shaft of the first motor can be connected to the horizontal translation module 520, and the rotation of the first motor can be transmitted to the horizontal translation module 520 through a mechanical transmission device (such as gears, belts, etc.) to achieve horizontal translation. The drive shaft of the second motor can be connected to the vertical translation module 530. Similarly, the rotation of the second motor can be transmitted to the vertical translation module 530 through a mechanical transmission device to achieve vertical translation. Finally, the third motor can be connected to the two first slings 250. The rotation of the third motor can be achieved by winding or releasing the two first slings 250, thus raising / lowering them. Similarly, the fourth motor can be connected to the two second slings 260. The rotation of the fourth motor can be achieved by winding or releasing the two second slings 260, thus raising / lowering them.

[0107] In some embodiments of the present invention, such as Figure 4As shown, the silicon material processing equipment also includes a hot air blower 600. The hot air blower 600 is disposed within the support frame 510 relative to the material bin 220 to blow hot air onto the filter screen 221. By setting up the hot air blower 600, the drainage process of the silicon material on the filter screen 221 can be accelerated and the silicon material can be preheated for subsequent heating processes.

[0108] In some embodiments of the present invention, reference is made to Figure 2 , Figure 5 as well as Figure 6 The hydrogen removal mechanism 300 includes: a first support base 310, a second support base 320, a heating box 330, one or more heating tubes 340, a first receiving tube 350, a first displacement cylinder 360, a carrier 370, a rotary motor 380, and a second displacement cylinder 390.

[0109] The first support base 310 and the second support base 320 are arranged opposite to each other. The heating box 330 has its first end on the first support base 310 and its second end on the second support base 320. The heating box 330 has a feeding port (not shown due to viewing angle) near its first end and an openable / closeable discharging port (not shown due to viewing angle) near its second end. The height of the first end of the heating box 330 is higher than the height of the second end. A cavity is formed inside the heating box 330, and an air outlet 331 is formed on the side wall of the heating box 330. One or more heating tubes 340 are arranged inside the cavity of the heating box 330 to heat the silicon material inside. One end of the first receiving tube 350 is connected to the feeding port (not shown due to viewing angle), and the other end is retractable. When the first receiving tube 350 is extended, it connects to the discharge port 240 of the material tank 220 to receive silicon material from the material tank 220. The first displacement cylinder 360 is connected at one end to the first support base 310 and at the other end to the free end of the first receiving pipe 350 to drive the first receiving pipe 350 to extend or retract. The carrier 370 is located inside the cavity of the heating box 330 and is rotatably mounted on the first support base 310 and the second support base 320 at both ends, respectively. The rotary motor 380 is mounted on the first support base 310 and connected to the rotation shaft of the carrier 370 to drive the carrier 370 to rotate. The second displacement cylinder 390 is mounted on the second support base 320 and its output end is connected to a sealing plate (not shown due to viewing angle). The sealing plate (not shown due to viewing angle) moves under the drive of the second displacement cylinder 390 to open / close the discharge port (not shown due to viewing angle).

[0110] In other words, during the heating process, the first displacement cylinder 360 first drives the first receiving pipe 350 to extend and connect to the outlet 240 of the material box 220, conveying the silicon material from the material box 220 to the feeding port (not shown due to perspective) at the first end of the heating box 330. The silicon material, after ultrasonic cleaning and preliminary dehydration and drying, then enters the cavity of the heating box 330 through the feeding port (not shown due to perspective). After the silicon material enters the cavity of the heating box 330, in some embodiments, the heating pipes 340 are multiple (e.g., Figure 6 As shown, there are 6 groups of heating tubes evenly distributed around the circumference of the heating chamber 330. Multiple heating tubes 340 are activated to heat the silicon material inside the cavity of the heating chamber 330. Simultaneously, during the heating process, the carrier 370 rotates under the drive of the rotary motor 380, ensuring uniform heating of the silicon material. Since the first support 310 is higher than the second support 320, the silicon material is conveyed to the discharge port on one side of the second support 320 due to gravity while rotating. After heating is complete, the second displacement cylinder 390 drives the sealing plate (not shown due to viewing angle) to move, opening the discharge port (not shown due to viewing angle), allowing the heated silicon material to be discharged from the discharge port (not shown due to viewing angle). During the heating process, hydrogen bonds on the silicon material break, generating hydrogen gas. Therefore, a vent 331 is provided on the side wall of the heating chamber 330 to remove hydrogen gas and ensure the safety of the device.

[0111] In some embodiments of the present invention, reference is made to Figure 1 , Figure 2 , Figure 6 as well as Figure 7 The cooling mechanism 400 includes a second receiving pipe 410, a cooling box 420, and a turntable 430. One end of the second receiving pipe 410 is connected to a discharge port (not shown due to perspective). The cooling box 420 is connected to the other end of the second receiving pipe 410 for feeding, and has an openable / closeable discharge port 421. In other words, after the silicon material undergoes high-temperature dehydrogenation treatment by the dehydrogenation mechanism 300, it first enters the second receiving pipe 410 through the discharge port (not shown due to perspective), and the other end of the second receiving pipe 410 is connected to the cooling box 420, thereby introducing the hot silicon material into the cooling box 420. The turntable 430 is located inside the cooling box and has stirring blades 431 for stirring and accelerating cooling. That is, during the cooling process, after the hot silicon material enters the cooling box 420, the turntable 430 begins to rotate, and the stirring blades 431 stir the silicon material to ensure uniform cooling. Furthermore, after cooling is complete, the discharge port 421 on the cooling box 420 can be opened to discharge the silicon material. Thus, the cooling mechanism 400 ensures that the silicon material is cooled uniformly after heat treatment, and is easy to operate and effective.

[0112] In some embodiments of the present invention, reference is made to Figure 2 , Figure 6 The cooling box 420 has a liquid argon inlet 433 and an exhaust port 432, and the heating box 330 has an air inlet 332. The exhaust port 432 of the cooling box 420 is connected to the air inlet 332 of the heating box 330.

[0113] It should be noted here that the reference Figure 2 and Figure 6 The cooling box 420 can be formed as a nested structure, with the middle layer forming a sandwich layer to accommodate cooling gas. Since argon gas has a relatively large mass, in this embodiment, the liquid argon inlet 433 is preferably formed at the bottom of the cooling box 420. Low-temperature liquid argon is gradually filled from the bottom of the cooling box 420 to the liquid argon inlet 433. After heat exchange, the argon gas flows into the heating box 330 from the inlet 332, acting as a protective gas. Furthermore, the temperature of the argon gas after heat exchange is increased, without affecting the heating and hydrogen removal effect. Thus, on the one hand, introducing liquid argon can rapidly cool the silicon material; on the other hand, liquid argon is an extremely low-temperature liquid with a boiling point of -186℃. When cooling the silicon material, the liquid argon transforms into argon gas, which can be introduced into the hydrogen removal mechanism 300 to provide an inert gas atmosphere for the silicon material, preventing other chemical reactions at high temperatures. The hydrogen removed at high temperatures is carried out by the argon gas, further improving the safety of equipment operation.

[0114] In some embodiments of the present invention, reference is made to Figure 5 The system also includes a weighing device 700, which is located below the discharge port 421 to receive the discharged material. The weighing device 700 is equipped with a signal transmitting device to control the opening and closing of the discharge port 421. In other words, the weighing device 700 is positioned below the discharge port 421 of the heating chamber 330 to receive the discharged silicon material. During silicon material discharge, the weighing device 700 can monitor and display the weight of the silicon material in real time. When the weight of the silicon material reaches a set value, such as 10 kg, the weighing device 700 controls the discharge port 421 to close via the signal transmitting device. This achieves real-time monitoring and precise control of the discharged silicon material weight, improving the automation level of the system.

[0115] It should be noted that in some embodiments of this application, a controller (not shown) may also be included to control all mechanisms. For example, the controller may be electrically connected to the vibrator 112 and dust extraction fan 125 of the vibration dust removal mechanism 100 to control the vibration frequency and time of the vibration device 110 and the on / off state of the dust extraction fan 125. The controller may also be electrically connected to the cleaning tank 210 and ultrasonic vibration device 230 of the ultrasonic cleaning mechanism 200 to control the frequency, temperature, and time of the ultrasonic waves in the cleaning tank 210 and the vibration frequency and time of the ultrasonic vibration device 230. The controller may also be electrically connected to the drive unit 550 of the hopper moving mechanism 500 to control the operation of the horizontal translation module 520, the vertical translation module 530, the first sling 250, and the second sling 260. The controller can also be electrically connected to the heating box 330, heating tube 340, first displacement cylinder 360, rotary motor 380, and second displacement cylinder 390 of the hydrogen removal mechanism 300 to control the opening / closing of the heating tube 340, the extension / retraction of the first receiving pipe 350, the rotation of the carrier 370, and the opening / closing of the discharge port (not shown due to perspective). The controller can also be connected to the second receiving pipe 410, cooling box 420, and turntable 430 of the cooling mechanism 400 to control the extension / retraction of the second receiving pipe 410, the opening / closing of the discharge port 421, the opening / closing of the stirring blades 431 on the turntable 430, and the opening / closing of the liquid argon inlet 433 and outlet 432. Finally, the controller can also be electrically connected to the weighing device 700 and the hot air blower 600 to receive signals from the weighing device 700 to control the opening / closing of the discharge port 421 and the hot air blower 600. To better control the opening / closing of the above-mentioned discharge port (not shown due to perspective) and / or exhaust port 421 and / or liquid argon inlet port 433 and exhaust port 432, auxiliary devices such as solenoid valves can be installed at the above-mentioned interfaces, which will not be elaborated here.

[0116] According to a second aspect of the present invention, a silicon material processing method using the silicon material processing equipment described in any of the first aspects can include the following steps:

[0117] Step S1: Add silicon material to the vibration dust removal mechanism 100 and vibrate the silicon material to remove dust;

[0118] Step S2: The silicon material after vibration dust removal is introduced into the ultrasonic cleaning mechanism 200 and ultrasonically cleaned.

[0119] Step S3: After the ultrasonic cleaning time is predetermined, the silicon material is introduced into the hydrogen removal mechanism 300 to heat the silicon material to remove hydrogen. The heating temperature is 900-1100℃.

[0120] Step S4: The heated silicon material is introduced into the cooling mechanism 400 for cooling to obtain the treated silicon material.

[0121] Specifically, such as Figures 1-7 As shown, the silicon material processing method according to an embodiment of the present invention first performs a first dust removal process, namely vibration dust removal, in which mechanical vibration can effectively remove dust from the surface of the silicon material and improve the purity of the silicon material. Then, a second dust removal process, namely ultrasonic cleaning dust removal, is performed on the silicon material. Ultrasonic cleaning dust removal can further remove strongly adhered dust from the silicon material. After the two dust removal processes, the silicon material is heated to remove hydrogen, solving the problem of high-temperature hydrogen spurt in the silicon material. Finally, it is cooled and bagged. The silicon material processing method according to an embodiment of the present invention, on the one hand, solves the dust generated during the production and transportation of silicon material through two dust removal processes; on the other hand, it solves the problem of high-temperature hydrogen spurt in the silicon material through a heating process, effectively protecting equipment and improving the product quality of the silicon material.

[0122] It should be noted that, in step S1, the mechanical vibration time of the vibration dust removal mechanism 100 can be controlled, for example, to be 1-2 minutes. If the time is too short, the silicon material will not be able to fully release the internal micro-dust, and if the time is too long, new dust will be generated due to the friction of the silicon material.

[0123] Furthermore, the parameters of the ultrasonic cleaning mechanism 200 used in this embodiment can be set as follows: ultrasonic temperature at room temperature, time at 100s, and amplitude at 30-45mm. The parameters in this embodiment are for reference only, and can be adjusted or selected adaptively based on the size of the silicon material, the dust removal conditions of the first dust removal process, and the type of ultrasonic equipment.

[0124] In some embodiments of the present invention, such as Figures 2 to 3 As shown, while the silicon material is being vibrated for dust removal, negative pressure suction is applied to remove the generated micro-dust. That is, the vibrator 112 drives the screen 111 to vibrate, causing the micro-dust to loosen and fall off from the surface or vicinity of the silicon material. The generated micro-dust is then directly sucked away by the dust removal suction fan 125 using the upper suction hood 121 and the lower suction hood 122. At the same time, the first suction pipe 123 and the second suction pipe 124 respectively discharge the micro-dust sucked away by the upper suction hood 121 and the lower suction hood 122.

[0125] This achieves simultaneous vibration dust removal and negative pressure suction. The synergistic effect of the two can effectively improve dust removal efficiency, while also reducing dust accumulation and clogging of the equipment, thus improving operational safety.

[0126] In some embodiments of the present invention, such as Figure 2As shown, vibration is performed simultaneously with ultrasonic cleaning, and the ultrasonically cleaned silicon material is drained, dried with hot air, and then introduced into the hydrogen removal unit 300. In other words, the silicon material is first immersed in a liquid for ultrasonic cleaning, where ultrasonic vibration generates microbubbles and high-frequency vibrations to remove dust and impurities from the silicon surface. Simultaneously, the vibration further enhances the cleaning effect. Afterwards, draining and hot air drying prevent the silicon material from sticking together due to moisture, which would hinder subsequent processing, such as introducing it into the hydrogen removal unit 300.

[0127] In some embodiments of the present invention, such as Figure 2 As shown, liquid argon is introduced into the cooling mechanism 400 to cool the silicon material, and the argon gas after heat exchange is introduced into the hydrogen removal mechanism 300 for inert gas atmosphere protection. In other words, on the one hand, introducing liquid argon can rapidly cool the silicon material; on the other hand, liquid argon is an extremely low-temperature liquid with a boiling point of -186℃. When the liquid argon cools the silicon material, it transforms into argon gas, which can be introduced into the hydrogen removal mechanism 300 to provide an inert gas atmosphere protection for the silicon material, preventing other chemical reactions at high temperatures. The hydrogen removed at high temperatures is carried away by the argon gas, further improving the safety of equipment operation.

[0128] Technical Solution 1. A silicon material processing device, comprising:

[0129] A vibration dust removal mechanism is used to remove dust from silicon material through vibration.

[0130] An ultrasonic cleaning unit is located downstream of the vibration dust removal unit to receive silicon material from the vibration dust removal unit and perform ultrasonic cleaning on it.

[0131] A hydrogen removal mechanism is located downstream of the ultrasonic cleaning mechanism and is used to heat and remove hydrogen from the ultrasonically cleaned silicon material.

[0132] A cooling mechanism, located downstream of the hydrogen removal mechanism, is used to cool the silicon material from the hydrogen removal mechanism.

[0133] Technical Solution 2. According to the silicon material processing equipment described in Technical Solution 1, the vibration dust removal mechanism includes:

[0134] A vibration device, used to cause the silicon material to vibrate in order to release micro-dust;

[0135] A suction device is provided relative to the vibration device to remove the dust particles.

[0136] Technical Solution 3. The silicon material processing equipment according to Technical Solution 2, wherein the vibration device comprises:

[0137] A sieve, used to receive and sieve silicon material to be processed;

[0138] A vibrator connected to the screen is used to drive the screen to vibrate, causing the silicon material on the screen to vibrate and release micro-dust.

[0139] Technical Solution 4. The silicon material processing equipment according to Technical Solution 3, wherein the suction device comprises:

[0140] An upper suction hood is disposed above the screen.

[0141] A lower suction hood is disposed below the screen.

[0142] The first suction pipe has one end positioned above the screen and connected to the upper suction hood.

[0143] The second suction pipe has one end positioned below the screen and connected to the lower suction hood.

[0144] A dust removal fan is provided, wherein the dust removal fan is connected to the upper suction hood via a first suction pipe and to the lower suction hood via a second suction pipe, in order to remove the fine dust.

[0145] Technical Solution 5. The silicon material processing equipment according to Technical Solution 3, wherein the vibration device further includes:

[0146] A feeding section, one end of which is used to receive silicon material and the other end is connected to the screen to transfer the silicon material to the screen.

[0147] The discharge section has one end connected to the screen and the other end forming a feeding port, which is used to convey the silicon material processed by the vibration dust removal mechanism to the ultrasonic cleaning mechanism.

[0148] The feeding section, the screen, and the discharging section are all configured to slope downwards from upstream to downstream.

[0149] Technical Solution 6. The silicon material processing equipment according to Technical Solution 5, wherein the ultrasonic cleaning mechanism comprises:

[0150] A cleaning tank is located downstream of the discharge section. The cleaning tank has an internal cavity and is connected to an inlet pipe and a drain pipe.

[0151] A material bin is disposed within the receiving cavity, and a filter screen is installed inside the material bin. The material bin is used to receive silicon material from the discharge section.

[0152] An ultrasonic vibration device is connected to the cleaning tank to ultrasonically clean the silicon material on the filter screen while the filter screen vibrates.

[0153] Technical Solution 7. The silicon material processing equipment according to Technical Solution 6, the silicon material processing equipment further includes a material box moving mechanism, the material box moving mechanism comprising:

[0154] A support frame is mounted above the cleaning tank, and a pair of parallel guide rails are provided on opposite sides of the top surface of the support frame.

[0155] A horizontal translation module, which is located at the top of the support frame and can move linearly along the guide rail;

[0156] A vertical translation module is connected to the bottom surface of the horizontal translation module, and the hopper is connected to the vertical translation module to move up and down with the vertical translation module;

[0157] Four slide rails, the top ends of the four slide rails are connected to the bottom surface of the horizontal translation module, and the four slide rails are respectively located at the four corners of the material box. The vertical translation module is connected to the four slide rails respectively to move up and down along the slide rails.

[0158] A drive unit is provided, which connects the horizontal translation module and the vertical translation module to control the movement of the horizontal translation module and the vertical translation module.

[0159] Technical Solution 8. The silicon material processing equipment according to Technical Solution 7, wherein the lower end of the material bin near the hydrogen removal mechanism is provided with a discharge port, and the ultrasonic cleaning mechanism further includes:

[0160] Two first slings, the upper ends of the two first slings are connected to the vertical translation module and the lower ends are connected to the side of the filter screen near the dust removal fan;

[0161] Two second slings, the upper ends of which are connected to the vertical translation module and the lower ends of which are connected to the side of the filter screen closest to the hydrogen removal mechanism.

[0162] By controlling the lifting of the two first slings and lowering the two second slings simultaneously through the drive unit, the filter screen can be tilted and brought closer to the discharge port corresponding to the side of the hydrogen removal mechanism, so that the silicon material can be output from the discharge port.

[0163] Technical Solution 9. The silicon material processing equipment according to Technical Solution 8, wherein the silicon material processing equipment further includes:

[0164] A hot air blower is disposed within the support frame relative to the material box to blow hot air onto the filter screen.

[0165] Technical Solution 10. The silicon material processing equipment according to Technical Solution 8, wherein the hydrogen removal mechanism comprises:

[0166] A first support base and a second support base are disposed opposite to each other;

[0167] A heating box, wherein the first end of the heating box is disposed on the first support base and the second end is disposed on the second support base, the heating box is provided with a feeding port near the first end and a discharge port that can be opened / closed near the second end, wherein the height of the first end of the heating box is higher than the height of the second end, a cavity is formed inside the heating box, and an air outlet is also formed on the side wall of the heating box.

[0168] One or more heating tubes are disposed inside the cavity of the heating chamber to heat the silicon material inside the heating chamber;

[0169] A first receiving tube, one end of which is connected to the feeding port and the other end is retractable. When the first receiving tube is extended, it is connected to the discharge port of the material box to receive silicon material from the material box.

[0170] A first displacement cylinder, one end of which is connected to the first support base and the other end of which is connected to the free end of the first receiving pipe to drive the first receiving pipe to extend or retract.

[0171] The carrier is located inside the cavity of the heating box and is rotatably mounted on the first support and the second support at both ends;

[0172] A rotary motor is mounted on the first support and connected to the rotation shaft of the carrier to drive the carrier to rotate.

[0173] The second displacement cylinder is mounted on the second support base and its output end is connected to a sealing plate. The sealing plate moves under the drive of the second displacement cylinder to open / close the discharge port.

[0174] Technical Solution 11. The silicon material processing equipment according to Technical Solution 10, wherein the cooling mechanism comprises:

[0175] The second receiving pipe has one end connected to the discharge port;

[0176] A cooling box is connected to the other end of the second receiving pipe for feeding, and the cooling box is provided with an openable / closeable discharge port;

[0177] A turntable is provided inside the cooling box and is equipped with stirring blades for stirring and accelerating cooling.

[0178] Technical Solution 12. According to the silicon material processing equipment described in Technical Solution 11, the cooling box has a liquid argon inlet and an exhaust port, the heating box has an inlet, and the exhaust port of the cooling box is connected to the inlet of the heating box.

[0179] Technical Solution 13. The silicon material processing equipment according to Technical Solution 11 further includes a weighing device, which is located below the discharge port to receive the discharge and is equipped with a signal transmitting device to control the opening / closing of the discharge port.

[0180] Technical Solution 14. A method for processing silicon material, comprising processing silicon material using the silicon material processing equipment described in any one of Technical Solutions 1-13, the method comprising the following steps:

[0181] Step S1: Add silicon material to the vibration dust removal mechanism and vibrate the silicon material to remove dust;

[0182] Step S2: The silicon material after vibration dust removal is introduced into the ultrasonic cleaning mechanism, and the silicon material is ultrasonically cleaned.

[0183] Step S3: After the ultrasonic cleaning time is predetermined, the silicon material is introduced into the hydrogen removal mechanism to heat the silicon material to remove hydrogen. The heating temperature is 900-1100℃.

[0184] Step S4: The heated silicon material is introduced into a cooling mechanism for cooling to obtain the treated silicon material.

[0185] Technical Solution 15. According to the silicon material processing method described in Technical Solution 14, while the silicon material is subjected to vibration dust removal, negative pressure suction is performed to remove the generated micro-dust.

[0186] Technical Solution 16. According to the silicon material processing method described in Technical Solution 14, vibration is performed while ultrasonic cleaning is being carried out, and the silicon material after ultrasonic cleaning is drained and dried with hot air before being introduced into the hydrogen removal mechanism.

[0187] Technical Solution 17. According to the silicon material processing method described in Technical Solution 14, liquid argon is introduced into the cooling mechanism to cool the silicon material, and the argon gas after heat exchange is introduced into the hydrogen removal mechanism for inert gas atmosphere protection.

[0188] The above description represents the preferred embodiments of the present invention. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A silicon material processing device, characterized in that, include: A vibration dust removal mechanism is used to remove dust from silicon material through vibration. The vibration dust removal mechanism includes: a vibration device and a suction device; the vibration device includes: a screen for receiving and screening silicon material to be processed; a vibrator connected to the screen for driving the screen to vibrate, causing the silicon material on the screen to vibrate and release dust; and a discharge section, one end of which is connected to the screen and the other end of which forms a feeding port; the suction device includes: an upper suction hood, correspondingly disposed above the screen, for suctioning dust scattered in the area above the screen; a lower suction hood, correspondingly disposed below the screen, for suctioning dust scattered in the area below the screen; a first suction pipe, one end of which is correspondingly disposed above the screen and connected to the upper suction hood; and a second suction pipe. The second suction pipe is positioned below the screen and connected to the lower suction hood; a dust removal suction fan is connected to the upper suction hood via a first suction pipe and to the lower suction hood via a second suction pipe to remove the micro-dust; an ultrasonic cleaning mechanism is provided, with the feeding port used to convey the silicon material processed by the vibration dust removal mechanism to the ultrasonic cleaning mechanism, which is located downstream of the vibration dust removal mechanism to receive the silicon material from the vibration dust removal mechanism and perform ultrasonic cleaning on it; wherein, the ultrasonic cleaning mechanism includes: a cleaning tank, which is located downstream of the discharge section, and has a receiving cavity formed inside the cleaning tank; and a material box, which is located inside the receiving cavity and is used to receive the silicon material from the discharge section. A hydrogen removal mechanism is located downstream of the ultrasonic cleaning mechanism and is used to heat and remove hydrogen from the ultrasonically cleaned silicon material. A cooling mechanism, located downstream of the hydrogen removal mechanism, is used to cool the silicon material from the hydrogen removal mechanism; The material bin moving mechanism includes: A support frame is mounted above the cleaning tank, and a pair of parallel guide rails are provided on opposite sides of the top surface of the support frame. A horizontal translation module, which is located at the top of the support frame and can move linearly along the guide rail; A vertical translation module is connected to the bottom surface of the horizontal translation module, and the hopper is connected to the vertical translation module to move up and down with the vertical translation module; Four slide rails, the top ends of the four slide rails are connected to the bottom surface of the horizontal translation module, and the four slide rails are respectively located at the four corners of the material box. The vertical translation module is connected to the four slide rails respectively to move up and down along the slide rails. A drive unit is provided, which connects the horizontal translation module and the vertical translation module to control the movement of the horizontal translation module and the vertical translation module.

2. The silicon material processing equipment according to claim 1, characterized in that, The vibration device also includes: A feeding section, one end of which is used to receive silicon material and the other end is connected to the screen to transfer the silicon material to the screen. The feeding section, the screen, and the discharging section are all configured to slope downwards from upstream to downstream.

3. The silicon material processing equipment according to claim 2, characterized in that, The cleaning tank is connected to a water inlet pipe and a water outlet pipe; a filter screen is installed inside the material box. The ultrasonic cleaning mechanism further includes an ultrasonic vibration device, which is connected to the cleaning tank to vibrate the filter screen while ultrasonically cleaning the silicon material on the filter screen.

4. The silicon material processing equipment according to claim 3, characterized in that, The lower end of the hopper near the hydrogen removal mechanism is provided with a discharge port, and the ultrasonic cleaning mechanism further includes: Two first slings, the upper ends of the two first slings are connected to the vertical translation module and the lower ends are connected to the side of the filter screen near the dust removal fan; Two second slings, the upper ends of which are connected to the vertical translation module and the lower ends of which are connected to the side of the filter screen closest to the hydrogen removal mechanism. By controlling the lifting of the two first slings and lowering the two second slings simultaneously through the drive unit, the filter screen can be tilted and brought closer to the discharge port corresponding to the side of the hydrogen removal mechanism, so that the silicon material can be output from the discharge port.

5. The silicon material processing equipment according to claim 4, characterized in that, The silicon material processing equipment also includes: A hot air blower is disposed within the support frame relative to the material box to blow hot air onto the filter screen.

6. The silicon material processing equipment according to claim 4, characterized in that, The hydrogen removal mechanism includes: A first support base and a second support base are disposed opposite to each other; A heating box, wherein the first end of the heating box is disposed on the first support base and the second end is disposed on the second support base, the heating box is provided with a feeding port near the first end and a discharge port that can be opened / closed near the second end, wherein the height of the first end of the heating box is higher than the height of the second end, a cavity is formed inside the heating box, and an air outlet is also formed on the side wall of the heating box. One or more heating tubes are disposed inside the cavity of the heating chamber to heat the silicon material inside the heating chamber; A first receiving tube, one end of which is connected to the feeding port and the other end is retractable. When the first receiving tube is extended, it is connected to the discharge port of the material box to receive silicon material from the material box. A first displacement cylinder, one end of which is connected to the first support base and the other end of which is connected to the free end of the first receiving pipe to drive the first receiving pipe to extend or retract. The carrier is located inside the cavity of the heating box and is rotatably mounted on the first support and the second support at both ends; A rotary motor is mounted on the first support and connected to the rotation shaft of the carrier to drive the carrier to rotate. The second displacement cylinder is mounted on the second support base and its output end is connected to a sealing plate. The sealing plate moves under the drive of the second displacement cylinder to open / close the discharge port.

7. The silicon material processing equipment according to claim 6, characterized in that, The cooling mechanism includes: The second receiving pipe has one end connected to the discharge port; A cooling box is connected to the other end of the second receiving pipe for feeding, and the cooling box is provided with an openable / closeable discharge port; A turntable is provided inside the cooling box and is equipped with stirring blades for stirring and accelerating cooling.

8. The silicon material processing equipment according to claim 7, characterized in that, The cooling box has a liquid argon inlet and an exhaust outlet, the heating box has an inlet, and the exhaust outlet of the cooling box is connected to the inlet of the heating box.

9. The silicon material processing equipment according to claim 7, characterized in that, It also includes a weighing device, which is located below the discharge port to receive the discharge and is equipped with a signal transmitting device to control the opening / closing of the discharge port.

10. A method for processing silicon material, characterized in that, Silicon material processing is performed using the silicon material processing equipment as described in any one of claims 1-9, the silicon material processing method comprising the following steps: Step S1: Add silicon material to the vibration dust removal mechanism and vibrate the silicon material to remove dust; Step S2: The silicon material after vibration dust removal is introduced into the ultrasonic cleaning mechanism, and the silicon material is ultrasonically cleaned. Step S3: After the ultrasonic cleaning time is predetermined, the silicon material is introduced into the hydrogen removal mechanism to heat the silicon material to remove hydrogen. The heating temperature is 900-1100℃. Step S4: The heated silicon material is introduced into a cooling mechanism for cooling to obtain the treated silicon material.

11. The silicon material processing method according to claim 10, characterized in that, While the silicon material is subjected to vibration dust removal, negative pressure suction is applied to remove the generated micro-dust; and / or Vibration is performed simultaneously with ultrasonic cleaning, and the ultrasonically cleaned silicon material is drained, dried with hot air, and then introduced into the hydrogen removal mechanism; and / or Liquid argon is introduced into the cooling mechanism to cool the silicon material, and the argon gas after heat exchange is introduced into the hydrogen removal mechanism for inert gas atmosphere protection.

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