Method for manufacturing an evaporation mask

Abstract

A method for manufacturing an evaporation mask of the present invention, which manufactures an evaporation mask having a stable connection structure between a thin film and a holding frame, wherein a mask body is prepared, a first peeling layer is formed on a first surface of the holding frame so that a part of the first peeling layer is exposed, a second peeling layer is formed on the first peeling layer so that a part of the second peeling layer is exposed, the mask body is attached to the holding frame via the second and first peeling layers in a stretched state, a connection member is formed so as to be in contact with three surfaces of the holding frame and the mask body, the first and second peeling layers are removed so as to expose the first surface of the holding frame and a surface of the connection member, in a plan view, a first outer edge of the connection member in the area in contact with the holding frame is located on the outer side compared with a second outer edge of the mask body in contact with the connection member, in a cross-sectional view, the surface of the connection member gradually approaches the second outer edge between the first outer edge and the second outer edge, and the connection member extends into a plurality of openings near the outer edge of the mask body.

Description

[0001] This application is a divisional application of international application number PCT / JP2019 / 049892, which entered the Chinese national phase on July 22, 2021, and has application number 201980089942.2. Technical Field

[0002] One embodiment of the present invention relates to a vapor deposition mask and a method for manufacturing a vapor deposition mask. In particular, one embodiment of the present invention relates to a vapor deposition mask having a thin-film-shaped mask body and a method for manufacturing a vapor deposition mask. Background Technology

[0003] Examples of flat panel display devices include liquid crystal displays (LCDs) and organic EL (Electroluminescence) displays. These display devices are structures in which thin films containing various materials such as insulators, semiconductors, and conductors are stacked on a substrate. These thin films are appropriately patterned and connected to achieve the function of a display device.

[0004] Methods for forming thin films can be broadly classified into gas-phase methods, liquid-phase methods, and solid-phase methods. Gas-phase methods are further divided into physical vapor deposition (PVD) and chemical vapor deposition (CVD). A well-known representative example of PPV is vapor deposition. The simplest method among vapor deposition methods is vacuum vapor deposition. Vacuum vapor deposition involves heating the material under high vacuum, causing it to sublimate or evaporate to generate vapor (hereinafter collectively referred to as vaporization). In the area where the material is deposited (hereinafter referred to as the deposition area), the vaporized material solidifies and accumulates, thereby obtaining a thin film. Thin films are selectively formed in the deposition areas. To prevent material accumulation in other areas (hereinafter referred to as non-deposition areas), a mask (vapor deposition mask) is used for vacuum vapor deposition (see Patent Documents 1 and 2).

[0005] Existing technical documents

[0006] Patent documents

[0007] Patent Document 1: Japanese Patent Application Publication No. 2009-87840

[0008] Patent Document 2: Japanese Patent Application Publication No. 2013-209710 Summary of the Invention

[0009] The technical problem that the invention aims to solve

[0010] Patent documents 1 and 2 disclose vapor deposition masks in which the vapor deposition area is formed of a thin film. To improve the accuracy of the shape and position of the thin film in the vapor deposition area, a structure is required to stably connect the thin film to a holding frame. One objective of one embodiment of the present invention is to provide a stable connection structure between the thin film and the holding frame that holds the thin film in a vapor deposition mask in which the vapor deposition area is formed of a thin film.

[0011] Technical solutions for solving the problem

[0012] An embodiment of the vapor deposition mask of the present invention includes: a thin film-shaped mask body having a plurality of openings; a retaining frame disposed around the mask body; and a connecting member connecting the mask body and the retaining frame. When viewed from above, a first outer edge of the connecting member in the area contacting the retaining frame is located outside the second outer edge of the mask body in contact with the connecting member. When observing a cross section, the surface of the connecting member gradually approaches the second outer edge from the first outer edge to the second outer edge.

[0013] A method for manufacturing a vapor deposition mask according to one embodiment of the present invention includes preparing a mask body having a plurality of openings; forming a first release layer on the first surface of a retaining frame having a first surface and a second surface opposite to the first surface, such that a portion of the first surface is exposed; forming a second release layer on the first release layer such that a portion of the second release layer is exposed from the first release layer; forming a connecting member in contact with a third surface between the first and second surfaces of the retaining frame, a side surface of the first release layer, a side surface of the second release layer, and the mask body; and removing the first and second release layers to expose the first surface of the retaining frame and the surface of the connecting member formed in contact with the first and second release layers. Attached Figure Description

[0014] Figure 1 This is a top view of a vapor deposition apparatus according to one embodiment of the present invention.

[0015] Figure 2 This is a side view of a vapor deposition apparatus according to one embodiment of the present invention.

[0016] Figure 3 This is a cross-sectional view of a vapor deposition source according to one embodiment of the present invention.

[0017] Figure 4 This is a top view of a vapor deposition mask according to one embodiment of the present invention.

[0018] Figure 5 This is a cross-sectional view of a vapor deposition mask according to one embodiment of the present invention.

[0019] Figure 6 This is an enlarged cross-sectional view of a vapor deposition mask according to one embodiment of the present invention.

[0020] Figure 7 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to one embodiment of the present invention.

[0021] Figure 8 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to one embodiment of the present invention.

[0022] Figure 9 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to one embodiment of the present invention.

[0023] Figure 10 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to one embodiment of the present invention.

[0024] Figure 11 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to one embodiment of the present invention.

[0025] Figure 12 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to one embodiment of the present invention.

[0026] Figure 13 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to one embodiment of the present invention.

[0027] Figure 14 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to one embodiment of the present invention.

[0028] Figure 15 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to one embodiment of the present invention.

[0029] Figure 16 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to one embodiment of the present invention.

[0030] Figure 17 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to one embodiment of the present invention.

[0031] Figure 18 This is a top view of a vapor deposition mask according to one embodiment of the present invention.

[0032] Figure 19 This is a cross-sectional view of a vapor deposition mask according to one embodiment of the present invention.

[0033] Figure 20 This is a top view of a display device according to one embodiment of the present invention.

[0034] Figure 21This is a cross-sectional view of a display device according to one embodiment of the present invention.

[0035] Figure 22 This is a cross-sectional view of a display device according to one embodiment of the present invention.

[0036] Figure 23 This is a cross-sectional view of a display device according to one embodiment of the present invention.

[0037] Figure 24 This is a cross-sectional view of a display device according to one embodiment of the present invention.

[0038] Figure 25 This is a cross-sectional view of a display device according to one embodiment of the present invention.

[0039] Figure 26 This is a cross-sectional view of a display device according to one embodiment of the present invention.

[0040] Figure 27 This is a cross-sectional view of a display device according to one embodiment of the present invention.

[0041] Figure 28 This is a cross-sectional view of a display device according to one embodiment of the present invention.

[0042] Figure 29 This diagram illustrates the problems identified during the process of achieving this invention.

[0043] Figure 30 This diagram illustrates the problems identified during the process of achieving this invention. Detailed Implementation

[0044] Hereinafter, various embodiments of the present invention will be described with reference to the accompanying drawings, etc. It should be noted that the present invention can be implemented in various ways without departing from its spirit and is not limited to the description of the embodiments exemplified below.

[0045] In the accompanying drawings, for clarity, the width, thickness, shape, etc., of each part are schematically shown compared to the actual form. However, the examples shown are merely illustrative and not intended to limit the interpretation of the invention. In this specification and the drawings, there are instances where the same reference numerals are used for structures identical to those described above, and detailed descriptions are appropriately omitted.

[0046] In this invention, when multiple films are formed by etching and light irradiation of a single film, these multiple films may sometimes have different functions or roles. However, since these multiple films are formed as the same layer through the same process, they have the same layer structure and the same material. Therefore, these multiple films are defined as films existing in the same layer.

[0047] In the scope of this specification and the claims, when it is expressed as "on top of" a structure, unless otherwise specified, this includes both cases where another structure is positioned directly on top of a structure in contact with that structure, and cases where another structure is positioned above a structure and separated from it by other structures.

[0048] <First Implementation Method>

[0049] use Figures 1 to 17 The following describes an embodiment of the vapor deposition mask, a method for manufacturing the vapor deposition mask, and a vapor deposition apparatus using it.

[0050] [Structure of vapor deposition apparatus 10]

[0051] use Figures 1-3 The structure of a vapor deposition apparatus 10 according to one embodiment of the present invention will be described below. The vapor deposition apparatus 10 includes multiple chambers having various functions. The example shown below illustrates one of the multiple chambers, the vapor deposition chamber 100. Figure 1 This is a top view of a vapor deposition apparatus according to one embodiment of the present invention. Figure 2 This is a side view of a vapor deposition apparatus according to one embodiment of the present invention.

[0052] like Figure 1 As shown, the vapor deposition chamber 100 is separated by adjacent chambers and a load locking door 102. The vapor deposition chamber 100 can maintain its interior in a high vacuum depressurization state or in a state filled with inactive gases such as nitrogen or argon. Therefore, a depressurization device or gas intake / exhaust mechanism (not shown) is connected to the vapor deposition chamber 100.

[0053] The vapor deposition chamber 100 has a structure capable of accommodating the object to which the vapor deposition film is formed. Hereinafter, an example will be described using a plate-shaped substrate 104 as the object to be vapor deposited. Figure 1 and Figure 2 As shown, a vapor deposition source 112 is disposed beneath the substrate 104 to be vapor-deposited. The vapor deposition source 112 has a generally rectangular shape and is disposed along one side of the substrate 104 to be vapor-deposited. Such a vapor deposition source 112 is referred to as a linear source type. When using a linear source type vapor deposition source 112, the vapor deposition chamber 100 has a structure in which the substrate 104 to be vapor-deposited and the vapor deposition source 112 move relative to each other. Figure 1 The diagram illustrates an example where the vapor deposition source 112 is fixed and moved on the vapor deposition substrate 104.

[0054] The material to be vaporized is filled into the vapor deposition source 112. The vapor deposition source 112 has a heating section 122 for heating the material (see below). Figure 3When the material is heated by the heating section 122 of the vapor deposition source 112, the heated material vaporizes and turns into steam, flowing from the vapor deposition source 112 towards the substrate 104 to be vapor-deposited. When the material vapor reaches the surface of the substrate 104, the vapor is cooled and solidified, and the material is deposited on the surface of the substrate 104. This is how it accumulates on the substrate 104. Figure 2 A thin film of the material is formed on the lower side surface of the vapor-deposited substrate 104.

[0055] like Figure 2 As shown, the vapor deposition chamber 100 further includes: a holder 108 for holding the substrate 104 to be vapor-deposited 104 and the vapor deposition mask 300; a moving mechanism 110 for moving the holder 108; and an opening / closing part 114, etc. The holder 108 maintains the relative positional relationship between the substrate 104 to be vapor-deposited 104 and the vapor deposition mask 300. The substrate 104 to be vapor-deposited 104 and the vapor deposition mask 300 are moved on the vapor deposition source 112 by the moving mechanism 110. The opening / closing part 114 is provided in a manner that allows it to move on the vapor deposition source 112. By moving the opening / closing part 114 on the vapor deposition source 112, the opening / closing part 114 blocks the vapor of the material heated by the vapor deposition source 112. By moving the opening / closing part 114 to a position that does not overlap with the vapor deposition source 112, the vapor of the material is not blocked by the opening / closing part 114 and can reach the substrate 104 to be vapor-deposited. The opening and closing of the opening / closing part 114 is controlled by a control device (not shown).

[0056] exist Figure 1 The example shown illustrates a linear source type vapor deposition source 112. The vapor deposition source 112 is not limited to the shape described above and can have any shape. For example, the shape of the vapor deposition source 112 can also be a so-called point source type, where the material to be vapor-deposited is selectively disposed at and near the center of gravity of the substrate 104 to be vapor-deposited. In the case of the point source type, the relative position of the substrate 104 to be vapor-deposited and the vapor deposition source 112 is fixed, and a mechanism for rotating the substrate 104 to be vapor-deposited can be provided in the vapor deposition chamber 100. Figure 1 and Figure 2 The example shown illustrates a horizontal vapor deposition apparatus in which the substrate's main surface is arranged parallel to the horizontal direction. However, the vapor deposition mask 300 can also be used in a vertical vapor deposition apparatus in which the substrate's main surface is arranged perpendicular to the horizontal direction.

[0057] Figure 3 This is a cross-sectional view of a vapor deposition source according to one embodiment of the present invention. The vapor deposition source 112 includes a receiving container 120, a heating section 122, a vapor deposition holder 124, a mesh metal plate 128, and a pair of guide plates 132.

[0058] The receiving container 120 is a component that holds the vapor-deposited material. For example, a crucible or similar component can be used as the receiving container 120. The receiving container 120 is detachably held inside the heating section 122. The receiving container 120 may contain metals such as tungsten, tantalum, molybdenum, titanium, or nickel, or alloys containing them. Alternatively, the receiving container 120 may contain inorganic insulators such as aluminum oxide, boron nitride, or zirconium oxide.

[0059] The heating element 122 is detachably held inside the vapor deposition holder 124. The heating element 122 has a structure that heats the receiving container 120 by resistance heating. Specifically, the heating element 122 has a heater 126. By energizing the heater 126, the heating element 122 is heated, and the material inside the receiving container 120 is heated and vaporized. The vaporized material is ejected from the opening 130 of the receiving container 120 to the outside of the receiving container 120. A mesh metal plate 128, arranged to cover the opening 130, can suppress the release of the boiled material outside the receiving container 120. The heating element 122 and the vapor deposition holder 124 can contain the same material as the receiving container 120.

[0060] A pair of guide plates 132 are disposed above the vapor deposition source 112. At least a portion of the guide plates 132 is inclined relative to the side or vertical direction of the receiving container 120. Due to the inclination of the guide plates 132, the diffusion angle of the material vapor (hereinafter referred to as the ejection angle) can be controlled, making the direction of vapor flight directional. The ejection angle is determined by the angle θe (in degrees) formed by the two guide plates 132. The angle θe can be appropriately adjusted by the size of the substrate 104 to be vaporized and the distance between the vapor deposition source 112 and the substrate 104 to be vaporized. The angle θe is, for example, 40° or more and 80° or less, 50° or more and 70° or less, and typically 60°. The surfaces formed by the inclined surfaces of the guide plates 132 are critical surfaces 160a and 160b. The material vapor flies approximately in the space between the critical surfaces 160a and 160b. Although not shown, when the vapor deposition source 112 is a point source, the guide plates 132 may also be part of a conical surface.

[0061] The material for vapor deposition can be selected from a variety of materials, including both organic and inorganic compounds. For example, luminescent materials or carrier-transporting organic compounds can be used. For inorganic compounds, metals, their alloys, or metal oxides can be used. Multiple materials can be filled into a single container 120 and deposited into a film. Although not shown, the vapor deposition chamber 100 can also be constructed by simultaneously heating different materials using multiple vapor deposition sources.

[0062] [Structure of vapor deposition mask 300]

[0063] use Figures 4-6The structure of a vapor deposition mask 300 according to one embodiment of the present invention will be described. Figure 4 This is a top view of a vapor deposition mask according to one embodiment of the present invention. The vapor deposition mask 300 has a thin-film mask body 310, a holding frame 330, and a connecting member 350. A plurality of openings 311 are provided in the mask body 310, penetrating the mask body 310. The area of ​​the mask body 310 outside the openings 311 is called a non-opening portion. The non-opening portion surrounds each opening 311. Specifically, the openings 311 are arranged in a manner that matches the pixel pitch of the display device.

[0064] During vapor deposition, the vapor deposition mask 300 is aligned with the substrate 104 to be vaporized, such that the vapor deposition area in the substrate 104 overlaps with the opening 311, and the non-vapor deposition area in the substrate 104 overlaps with the non-opening portion. Material vapor passes through the opening 311, and the material accumulates in the vapor deposition area of ​​the substrate 104.

[0065] A retaining frame 330 is disposed around the mask body 310. A connecting member 350 is disposed between the mask body 310 and the retaining frame 330, connecting the mask body 310 and the retaining frame 330. In the area contacting the retaining frame 330, the first outer edge 353 of the connecting member 350 is located outside the second outer edge 313 of the mask body 310 that contacts the connecting member 350. That is, when viewed from above, the mask body 310 and the retaining frame 330 do not overlap. In other words, the first outer edge 353 surrounds the second outer edge 313 in the above structure. However, when viewed from above, the mask body 310 and the retaining frame 330 may overlap.

[0066] Figure 5 This is a cross-sectional view of a vapor deposition mask according to one embodiment of the present invention. Figure 5 The cross-sectional view shown is along Figure 4 A cross-sectional view of line A-A'. (See figure) Figure 5 As shown, the connecting member 350 is disposed on the mask body 310 along the end of the mask body 310. The connecting member 350 protrudes from the end of the mask body 310 toward the outside of the mask body 310. Figure 4 As shown, opening 311 contains multiple openings 311p. For ease of explanation, opening 311 is represented as a single continuous structure.

[0067] The retaining frame 330 is positioned higher than the upper surface of the mask body 310. That is, in the vertical direction, the lower end (first surface 331) of the retaining frame 330 is positioned higher than the upper end of the mask body 310. The retaining frame 330 is positioned further outward than the outer edge of the mask body 310. That is, in the horizontal direction, the retaining frame 330 is positioned further outward than the mask body 310. The aforementioned vertical direction is orthogonal to the main surface of the mask body 310. The horizontal direction is parallel to the main surface of the mask body 310.

[0068] The connecting member 350 contacts the first surface 331 and the third surface 335 of the retaining frame 330. However, the connecting member 350 is not provided on the second surface 333 of the retaining frame 330. The connecting member 350 contacts a portion of the first surface 331 of the retaining frame 330 on the side of the mask body 310. Similarly, the connecting member 350 contacts the third surface 335 of the retaining frame 330 from its lower end to its upper end.

[0069] exist Figure 6 China indicates that it will Figure 5 The enlarged image shows the area enclosed by the dashed line. (Example) Figure 6 As shown, the connecting member 350 contacts the retaining frame 330 from the lower end of the third surface 335 to the first outer edge 353. In other words, no space is formed between the upper surface of the connecting member 350 and the lower surface of the retaining frame 330, located vertically below the retaining frame 330 (the area below the retaining frame 330 that overlaps with the retaining frame 330 when viewed from above). The first outer edge 353 refers to the position corresponding to the outer edge of the connecting member 350 within the area where the connecting member 350 contacts the retaining frame 330. Figure 6 In the diagram, the first outer edge 353 is the end portion of the mask body 300 in the direction towards the outer side of the vapor deposition mask 300, located in the area where the connecting member 350 contacts the first surface 331 of the holding frame 330. The second outer edge 313 is the area corresponding to the outer edge of the mask body 310 in the area where the mask body 310 contacts the connecting member 350. Figure 6 In the process, multiple openings 315 are provided near the outer edge of the mask body 310, and the connecting component 350 enters the interior of the multiple openings 315.

[0070] In cross-section, the lower surface of the connecting member 350 has a stepped shape from the first outer edge 353 to the second outer edge 313. That is, when moving from the first outer edge 353 along the surface of the connecting member 350 towards the second outer edge 313, the point of movement gradually approaches the second outer edge 313 without moving away from it in a straight line. In other words, between the first outer edge 353 and the second outer edge 313, the surface of the connecting member 350 gradually approaches the second outer edge 313. Further, between the first outer edge 353 and the second outer edge 313, the surface of the connecting member 350 does not protrude from the second outer edge 313 side towards the first outer edge 353 side. Further, the surface of the connecting member 350 from the first outer edge 353 to the second outer edge 313 faces outward and downward towards the vapor deposition mask 300, but not upward.

[0071] In the above structure, the thickness d1 of the mask body 310 is 1 μm or more and 10 μm or less. The thickness d2 from the first surface 331 of the retaining frame 330 to the lower end of the connecting member 350 located vertically below the retaining frame 330 is 10 μm or more and 100 μm or less. The width w1 of the connecting member 350 in contact with the first surface 331 of the retaining frame 330 is 10 μm or more and 100 μm or less. Figure 6 For ease of explanation, thickness d1 is expressed as being the same size as thickness d2 and width w1. As mentioned above, thickness d1 is approximately one order of magnitude smaller than thickness d2 and width w1. In this structure, for example, when the tensile stress of the mask body 310 is high, and the retaining frame 330 is fixed to the mask body 310 using spot welding or the like, there may be undesirable situations such as deformation occurring between the joint and non-joint parts, or damage to the film portion due to such deformation. When the mask body 310 is a thin film, the film itself has a small thermal capacitance, and it immediately melts due to the heat generated by welding, making it difficult to obtain a good connection between the retaining frame 330 and the mask body 310. Based on this embodiment, the retaining frame 330 and the mask body 310 can be uniformly joined using the first connecting member 350.

[0072] As described above, in the vapor deposition mask 300 according to this embodiment, the bonding strength between the connecting member 350 and the holding frame 330 is improved by the contact between the connecting member 350 and the first surface 331 and the third surface 335 of the holding frame 330. The bonding strength between the connecting member 350 and the mask body 310 is also improved by the connecting member 350 entering the interior of the opening 315 of the mask body 310. To suppress deformation of the mask body 310, the mask body 310 is adhered to the holding frame 330 in a strongly stretched state. As a result, strong stress exists between the mask body 310 and the connecting member 350, and between the holding frame 330 and the connecting member 350. However, as described above, since the bonding strength between the connecting member 350 and the holding frame 330, and between the connecting member 350 and the mask body 310, is improved, their peeling can be suppressed.

[0073] [Manufacturing method of vapor deposition mask 300]

[0074] use Figures 7 to 17 A method for manufacturing a vapor deposition mask 300 according to one embodiment of the present invention will be described. Figures 7 to 17 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask according to one embodiment of the present invention.

[0075] like Figure 7 As shown, a resist mask 410 with openings 411 is formed on the first surface 331 and the second surface 333 of a rigid retaining frame 330. The openings 411 are only provided on the first surface 331 side of the retaining frame 330, and not on the second surface 333 side. A release layer 420 is formed on the first surface 331 of the retaining frame 330 exposed through the openings 411. In subsequent processes, the release layer 420 is used to peel off the bonding layer 460 and the support substrate 470 formed on the release layer 420. The release layer 420 may be referred to as the "first release layer". A plating layer can be used as the release layer 420. For example, ... Figure 7 As shown, when a release layer 420 is selectively formed on the retaining frame 330 exposed through the opening 411, the release layer 420 can be formed by electroplating with current applied to the retaining frame 330.

[0076] The retaining frame 330 can be made of a rigid substrate such as a metal substrate (e.g., stainless steel), a silicon substrate, a glass substrate, or a quartz substrate. For example, the thickness of the retaining frame 330 is 300 μm or more and 3 mm or less, preferably 500 μm or more and 2 mm or less.

[0077] A plating layer can be used as the release layer 420. There are no particular limitations on the material used as the plating layer; for example, nickel (Ni) can be used. The release layer 420 can be formed using electrolytic plating or electroless plating.

[0078] Next, as Figure 8 As shown, by peeling off the resist mask 410, a structure is obtained in which a release layer 420 is selectively formed on the first surface 331 of the retaining frame 330. In other words, the release layer 420 is formed in such a way that a portion of the first surface 331 is exposed through the above-described process.

[0079] exist Figure 7 In the process, a plating layer can also be formed inside the opening 411 and on the resist mask 410 by an electroless plating method. The plating layer formed on the resist mask 410 is then removed by lifting the resist mask 410, thus forming... Figure 8 The peeling layer 420 is shown.

[0080] Next, as Figure 9 As shown, a resist mask 430 is formed on the first surface 331 and the second surface 333 of the retaining frame 330. The resist masks 430 on the first surface 331 and the second surface 333 are each formed in approximately the same area when viewed from above. The resist masks 430 are formed in approximately the same area when viewed from above. Figure 4 and Figure 5 The resist mask 430 covers the release layer 420 in the overlapping area of ​​the retaining frame 330. In other words, when viewed from above, the end of the release layer 420 exists in a region inside the resist mask 430 beyond the end of the resist mask 430. Further, in other words, when viewed from above, the release layer 420 exists inside the resist mask 430. Further, in other words, the resist mask 430 is patterned in a manner that the release layer 420 is not exposed.

[0081] Next, as Figure 10 As shown, using the resist mask 430 as a mask, the retaining frame 330 is etched from the first surface 331 side and the second surface 333 side, and then the resist mask 430 is removed. Figure 10 The image only shows a portion of the area holding frame 330, but through this etching, a portion is formed within it. Figure 4 and Figure 5 The retaining frame 330 is shown. That is, in Figure 10 In the middle, end 405 corresponds to the inner edge of retaining frame 330, and end 407 corresponds to the outer edge of retaining frame 330.

[0082] In the above process, the etching of the retaining frame 330 is performed by wet etching. However, this etching can also be performed by dry etching. When the etching of the retaining frame 330 is performed by dry etching, the resist mask 430 can be formed on either the first surface 331 or the second surface 333. The method of forming the retaining frame 330 is not limited to the above-described etching; it can also be performed by mechanical methods such as cutting.

[0083] Next, as Figure 11 As shown, the processed retaining frame 330 is bonded to the support substrate 450 using a bonding layer 440. The bonding layer 440 and the support substrate 450 are bonded to the second surface 333 of the retaining frame 330. The bonding layer 440 is bonded to the support substrate 450 in a stretched state, in which the retaining frame 330 is bonded to the bonding layer 440. In other words, the retaining frame 330 is bonded to the bonding layer 440 under tensile stress. The support substrate 450 is a rigid substrate.

[0084] As the bonding layer 440, a resin layer such as polyimide resin, acrylic resin, epoxy resin, silicone resin, fluororesin, and siloxane resin is used. When a resin layer is used as the bonding layer 440, for example, laser irradiation of the bonding layer 440 can separate the support substrate 450 from the bonding layer 440. As the bonding layer 440, an inorganic layer such as a metal layer, a metal oxide layer, or an inorganic insulating layer may also be used in addition to a resin layer.

[0085] exist Figure 11 In the shown state, the bonding layer 440 is etched using the retaining frame 330 as a mask. The etching of the bonding layer 440 is performed by wet etching. However, the etching of the bonding layer 440 can also be performed by dry etching. After etching the bonding layer 440, by peeling the support substrate 450 from the bonding layer 440, a [finished product] can be obtained. Figure 12 The structure is shown. The bonding layer 440 covers the second surface 333 of the retaining frame 330. When viewed from above, the retaining frame 330 and the bonding layer 440 have approximately the same pattern. However, through the etching of the bonding layer 440 described above, the end of the second surface 333 of the retaining frame 330 can also be exposed from the bonding layer 440.

[0086] Next, as Figure 13 As shown, the support substrate 470 is bonded to the first surface 331 side of the retaining frame 330 using a bonding layer 460. The bonding layer 460 is elastic. Therefore, as... Figure 13 As shown, the bonding layer 460 is adhered in such a manner that it contacts not only the lower surface 421 of the release layer 420 but also the side surface 423 of the release layer 420. Figure 13 In this case, the bonding layer 460 is also adhered to the first surface 331 of the retaining frame 330 exposed from the release layer 420. The bonding layer 460 may be conductive or insulating.

[0087] exist Figure 13The illustration shows a structure in which the bonding layer 460 is adhered to a portion of the first surface 331 of the retaining frame 330, but is not limited to this structure. For example, even when there is a gap between the bonding layer 460 and the retaining frame 330, and the bonding layer 460 and the support substrate 470 are adhered to the retaining frame 330, it is sufficient that the distance between the retaining frame 330 and the bonding layer 460 is smaller than the thickness of the release layer 420. In other words, when the bonding layer 460 and the support substrate 470 are adhered to the retaining frame 330, it is sufficient that the bonding layer 460 contacts a portion of the side surface 423 of the release layer 420. In particular, in this state, it is sufficient that the bonding layer 460 contacts the region on the lower surface 421 side of the side surface 423 of the release layer 420.

[0088] Next, in Figure 13 Etching of the bonding layer 460 in the state shown allows for the obtaining of Figure 14 The state shown. The etching of the bonding layer 460 was performed via wet etching. Figure 13 In the state shown, when the bonding layer 460 is wet-etched, the bonding layer 460 is etched from the end 461 where it contacts the first surface 331 of the retaining frame 330. The etching of the bonding layer 460 proceeds from the end 461 in the film thickness direction of the bonding layer 460 and in a direction parallel to the first surface 331. As a result, as... Figure 14 As shown, a stepped structure is formed by the bonding layer 460 and the release layer 420. That is, a structure in which a portion of the upper surface 465 of the bonding layer 460 is exposed from the release layer 420 is obtained. The bonding layer 460 is the layer that bonds the retaining frame 330 and the support substrate 470, and in a subsequent process, it is the layer used to peel the support substrate 470 from the retaining frame 330. There is a case where the bonding layer 460 is referred to as the "second release layer".

[0089] When the bonding layer 460 is etched by wet etching, it is necessary to ensure that the bonding layer 440 disposed on the second surface 333 of the retaining frame 330 is not etched. For example, the bonding layer 440 can be cured before etching. Alternatively, a material with high etching resistance to the etchant of the bonding layer 460 can be used as the bonding layer 440. As the bonding layer 440 and the bonding layer 460 respectively, by using different materials, for example, the bonding layers 440 and 460 can be cured by a single curing process (e.g., heat treatment).

[0090] Next, by peeling the support substrate 470 from the bonding layer 460, it is possible to obtain Figure 15 The structure shown. In Figure 15In this state, the distance (d4) from the imaginary end 409 of the retaining frame 330 to the end of the bonding layer 460 and the distance (d5) from the imaginary end 409 to the end of the peeling layer 420 gradually increase from the lower surface 463 of the bonding layer 460 toward the retaining frame 330. Figure 15 In this state, the distance between the side surface of the bonding layer 460 and the imaginary end 409 is constant in the thickness direction of the bonding layer 460. Although a structure in which the distance between the side surface of the release layer 420 and the imaginary end 409 is constant in the thickness direction of the release layer 420 is exemplified, it is not limited to this structure. For example, if the distance between the side surface of the bonding layer 460 and the imaginary end 409 is not constant in the thickness direction of the bonding layer 460, the distance between the side surface of the bonding layer 460 and the imaginary end 409 can gradually increase from the lower surface 463 of the bonding layer 460 toward the retaining frame 330. Similarly, if the distance between the side surface of the release layer 420 and the imaginary end 409 is not constant in the thickness direction of the release layer 420, the distance between the side surface of the release layer 420 and the imaginary end 409 can gradually increase from the bonding layer 460 toward the retaining frame 330.

[0091] In formation Figure 15 After reaching the state shown, the mask body 310 with openings 311 and 315 is attached to the bonding layer 460 (see reference). Figure 16 Although not shown, in this process, the mask body 310 is attached to the bonding layer 460 while still attached to the support substrate. The mask body 310 may be conductive, but in the plating process described above, if there is a method to conduct electricity without passing through the mask body 310 during the growth of the connecting member 350, the mask body 310 may also be insulating. The mask body 310 is attached to the support substrate in a stretched state. That is, the mask body 310 is attached to the support substrate while under tensile stress. A resist mask 480 is formed on the side of the holding frame 330 of the mask body 310. The resist mask 480 is disposed in the region inside the mask body 310. The resist mask 480 is also formed in the region where the opening 311 is provided. On the other hand, the resist mask 480 exposes the region where the opening 315 is formed. The resist mask 480 is provided to protect the region other than the region where the connecting member 350 is formed in subsequent processes.

[0092] exist Figure 16 In the state shown, by using an electroplating method (or electroforming plating method) that energizes at least the mask body 310, it is possible to achieve the following: Figure 17The connecting member 350 is shown. That is, the connecting member 350 is a plating layer. The connecting member 350 is in contact with a portion of the first surface 331 of the retaining frame 330 exposed from the release layer 420, the side surface 423 of the release layer 420, a portion of the upper surface 465 of the bonding layer 460 exposed from the release layer 420, the side surface 467 of the bonding layer 460, the third surface 335 of the retaining frame 330, and the surface of the mask body 310. In this state, there is no release layer 420 and bonding layer 460 between the connecting member 350 and the retaining frame 330. In other words, in Figure 17 In this state, below the vertically positioned retaining frame 330, there are no components (in this example, the peeling layer 420 and the bonding layer 460) disposed between the connecting member 350 and the retaining frame 330 that will be peeled off in subsequent processes. That is, the upper surface 357 of the connecting member 350 contacts the first surface 331 of the retaining frame 330.

[0093] The connecting component 350 does not necessarily have to contact the retaining frame 330. Any component that is peeled off from the retaining frame 330 during the manufacturing process of the vapor deposition mask 300 can also be placed on the first surface 331 of the retaining frame 330 (between the connecting component 350 and the retaining frame 330).

[0094] When the connecting member 350 is formed by electroplating, since the bonding layer 440 is provided on the second surface 333 of the retaining frame 330, the connecting member 350 is not formed on the second surface 333 side of the retaining frame 330.

[0095] The connecting component 350 can also be formed using an electroless electroplating method. The connecting component 350 can also be a structure other than a plating layer. For example, the connecting component 350 can also contain solder or resin, etc.

[0096] from Figure 17 The state shown involves peeling the outer regions of the release layer 420, bonding layer 460, and mask body 310 downwards, and peeling the bonding layer 440 upwards, thereby forming... Figure 6 The vapor deposition mask 300 is shown. In other words, by removing the release layer 420 and the bonding layer 460, the first surface 331 of the holding frame 330 is exposed, and the surface of the connecting member 350 formed in contact with the release layer 420 and the bonding layer 460 is exposed, thereby enabling the vapor deposition mask 300 to be formed. With the above-described structure, in Figure 17 In this state, when the outer regions of the peeling layer 420, the bonding layer 460, and the mask body 310 are peeled downwards, these components are peeled downwards without being held in place by the connecting component 350.

[0097] [Problems identified during the development of this invention]

[0098] use Figure 29and Figure 30 The following explanation addresses problems identified during the development of this invention. These problems were newly discovered through the inventors' careful research during the development of this invention, and are not generally known problems related to vapor deposition masks. In the following description, there are instances where descriptions of structures and manufacturing methods identical to those described in the above embodiments are omitted.

[0099] Figure 29 It is the same as the above-described implementation method. Figure 17 The corresponding diagram. Figure 30 It is the same as the above-described implementation method. Figure 6 The corresponding diagram. From Figure 29 As shown, the outer regions of the release layer 420Z, bonding layer 460Z, and mask body 310Z are peeled downwards, and the bonding layer 440Z is peeled upwards, thereby forming... Figure 30 The vapor deposition mask shown is 300Z.

[0100] In the manufacturing method of the vapor deposition mask 300Z prior to the present invention, for example, Figure 7 and Figure 8 As shown, the release layer 420Z was not patterned. Therefore, when patterning the retaining frame 330Z, the release layer 420Z and the retaining frame 330Z used the same mask (e.g., with the same mask as the retaining frame 330Z). Figure 9 The resist mask 430 (corresponding to the mask) is etched through the same process. The result is, as... Figure 29 As shown, the release layer 420Z has the same pattern as the retaining frame 330Z. Since the release layer 420Z and the retaining frame 330Z have the same pattern, when forming the bonding layer 460Z on the release layer 420Z, the bonding layer 460Z is etched inwards towards the pattern of the release layer 420Z and the retaining frame 330Z, forming... Figure 29 The structure shown. Figure 29 Structure and Figure 17 The structure is different. Below the vertical part of the retaining frame 330Z, a peeling layer 420Z is provided between the upper surface 357Z of the connecting part 350Z and the first surface 331 of the retaining frame 330Z.

[0101] from Figure 29 When peeling the outer regions of the release layer 420Z, bonding layer 460Z, and mask body 310Z downwards, as shown, a portion of the release layer 420Z may become stuck on the upper surface 357Z of the connecting member 350Z. This sticking can damage the area including the upper surface 357Z of the connecting member 350Z. Figure 30As shown, a portion of the connecting component 350Z is broken, resulting in a "burr". When a "burr" occurs, the vapor deposition mask 300Z cannot achieve close contact (tight adhesion) with the substrate to which the film is to be deposited. Therefore, the vapor deposition material also forms in areas outside the opening 311Z of the vapor deposition mask 300Z. That is, diffusion of the vapor deposition material occurs. When diffusion of the vapor deposition material occurs, it will cause problems such as color mixing or light blurring between adjacent pixels.

[0102] On the other hand, the vapor deposition mask 300 based on the above embodiment can suppress the occurrence of "burrs" generated on the vapor deposition mask 300Z. As a result, it is possible to suppress color mixing or light blurring between adjacent pixels caused by the diffusion of the vapor deposition material.

[0103] <Second Implementation Method>

[0104] use Figure 18 and Figure 19 A vapor deposition mask according to one embodiment of the present invention will be described. Figure 18 This is a top view of a vapor deposition mask according to one embodiment of the present invention. Figure 19 This is a cross-sectional view of a vapor deposition mask according to one embodiment of the present invention.

[0105] like Figure 18 and Figure 19 As shown, the vapor deposition mask 300A has connecting parts 350A and mask bodies 310A at each window portion of the grid-shaped holding frame 330A. Multiple openings 311A ​​are provided in each mask body 310A. Each opening 311A ​​connects with... Figure 4 and Figure 5 Similarly, the multiple openings 311pA are arranged to match the pixel pitch of the display device. Figure 4 and Figure 5 The diagram shows a structure in which a holding frame 330 has one opening, and a connecting member 350 and a mask body 310 are disposed inside the opening. However, as mentioned above, multiple openings can also be provided in the holding frame 330A, and a connecting member 350A and a mask body 310A can be disposed inside each opening.

[0106] <Third Implementation Method>

[0107] In this embodiment, a method for manufacturing a display device 200 using the thin-film formation method employing the vapor deposition masks 300 and 300A described in the first and second embodiments will be described. As a third embodiment of the display device 200, a method for manufacturing an organic EL display device in which multiple pixels, each having an organic light-emitting element (hereinafter referred to as a light-emitting element), are formed on an insulating substrate 202 will be described. Details described in the first and second embodiments may be omitted.

[0108] [Structure of the array substrate]

[0109] Figure 20 This is a top view of a display device according to one embodiment of the present invention. The display device 200 has an insulating substrate 202 on which a plurality of pixels 204 and driving circuits 206 (gate-side driving circuit 206a, source-side driving circuit 206b) for driving the pixels 204 are disposed. The insulating substrate 202 is, for example, a glass substrate or a resin substrate. The plurality of pixels 204 are arranged periodically, thereby defining a display area 205. As described below, a light-emitting element 260 is disposed in each pixel 204.

[0110] A driving circuit 206 is disposed in the peripheral area surrounding the display area 205. Various wirings (not shown) formed of a patterned conductive film extend from the display area 205 and the driving circuit 206 toward one side of the insulating substrate 202. These wirings are exposed on the surface near the ends of the insulating substrate 202, thereby forming terminals 207. These terminals 207 are electrically connected to a flexible printed circuit board (FPC) (not shown). Various signals for driving the display device 200 are input to the driving circuit 206 and the pixel 204 via the terminals 207. Although not shown, a driver IC with an integrated circuit may be further mounted together with, or in part thereof, the driving circuit 206.

[0111] Figure 21 This is a schematic cross-sectional view spanning two adjacent pixels 204 (204a and 204b). Pixel circuits are formed in each pixel 204. The structure of the pixel circuits is arbitrary. Figure 21 In the diagram, the pixel circuit represents the driving transistor 210, the holding capacitor 230, the auxiliary capacitor 250, and the light-emitting element 260.

[0112] The components included in the pixel circuit are disposed on the insulating substrate 202 via an undercoating layer 208. The driving transistor 210 includes a semiconductor film 212, a gate insulating film 214, a gate electrode 216, a source electrode 220, and a drain electrode 222. The gate electrode 216 is configured to intersect the gate insulating film 214 with at least a portion of the semiconductor film 212. The semiconductor film 212 has a drain region 212a, a source region 212b, and a channel 212c. The channel 212c is the region where the semiconductor film 212 overlaps with the gate electrode 216. The channel 212c is disposed between the drain region 212a and the source region 212b.

[0113] The capacitor electrode 232 and the gate electrode 216 exist in the same layer, and their respective gate insulating films 214 overlap with the drain region 212a. An interlayer insulating film 218 is formed on the gate electrode 216 and the capacitor electrode 232. Openings leading to the source region 212b and the drain region 212a are formed in the interlayer insulating film 218 and the gate insulating film 214, respectively. The source electrode 220 and the drain electrode 222 are disposed inside these openings. The drain electrode 222 overlaps with the capacitor electrode 232 via the interlayer insulating film 218. A holding capacitor 230 is formed through the drain region 212a, the capacitor electrode 232 and the gate insulating film 214 between them, and the capacitor electrode 232, the drain electrode 222 and the interlayer insulating film 218 between them.

[0114] A planarization film 240 is provided on the driving transistor 210 and the holding capacitor 230. The planarization film 240 has an opening leading to the drain electrode 222. The opening and a connection electrode 242 covering a portion of the upper surface of the planarization film 240 are arranged to contact the drain electrode 222. An additional capacitor electrode 252 is provided on the planarization film 240. A capacitor insulating film 254 is provided to cover the connection electrode 242 and the additional capacitor electrode 252. A portion of the connection electrode 242 is exposed in the opening of the planarization film 240. Thus, the pixel electrode 262 and the drain electrode 222 of the light-emitting element 260 are electrically connected via the connection electrode 242. An opening 256 is provided on the capacitor insulating film 254. A partition wall 258 provided on the capacitor insulating film 254 contacts the planarization film 240 via the opening 256. With this structure, impurities in the planarization film 240 can be removed through the opening 256, thereby improving the reliability of the pixel circuit and the light-emitting element 260. Furthermore, the formation of the connecting electrode 242 and the opening 256 is arbitrary.

[0115] A pixel electrode 262 is disposed on a capacitor insulating film 254 in such a way that it covers the connecting electrode 242 and the additional capacitor electrode 252. The capacitor insulating film 254 is disposed between the additional capacitor electrode 252 and the pixel electrode 262. This structure constitutes an additional capacitor 250. The pixel electrode 262 is shared by the additional capacitor 250 and the light-emitting element 260. A partition wall 258 is disposed on the pixel electrode 262, covering the end of the pixel electrode 262. Sometimes the insulating substrate 202 and the structure from the base coating 208 to the partition wall 258 are referred to as an array substrate. Since the array substrate can be manufactured using known materials and known methods, its description is omitted.

[0116] [Structure of light-emitting element 260]

[0117] like Figure 21As shown, the light-emitting element 260 includes a pixel electrode 262, an EL layer 264, and a counter electrode 272. The EL layer 264 and the counter electrode 272 are disposed such that they cover the pixel electrode 262 and the partition wall 258. Figure 21 In the example shown, the EL layer 264 includes a hole injection layer and a hole transport layer 266, an emissive layer 268 (emissive layers 268a, 268b), an electron injection layer, and an electron transport layer 270. The hole injection layer and hole transport layer 266, as well as the electron injection layer and electron transport layer 270, are shared by multiple pixels 204. Similarly, the opposing electrode 272 covers multiple pixels 204 and is shared by them. On the other hand, the emissive layer 268 is provided independently relative to each pixel 204.

[0118] The pixel electrode 262, the counter electrode 272, and the EL layer 264 can each be constructed using known structures and materials. For example, in addition to the structures described above, the EL layer 264 can also have various functional layers such as hole blocking layers, electron blocking layers, and exciton blocking layers.

[0119] The structure of the EL layer 264 can be the same across multiple pixels 204, or a portion of the structure can differ between adjacent pixels 204. For example, pixels 204 can be constructed such that the structure or material of the light-emitting layer 268 differs between adjacent pixels 204, while other layers have the same structure.

[0120] [Method for forming the light-emitting element 260]

[0121] The EL layer 264 and the opposing electrode 272 can be formed using the vapor deposition masks of the first and second embodiments. Hereinafter, using... Figures 22-28 The method for forming the EL layer 264 and the opposing electrode 272 is explained. In these figures, the EL layer 264 and the opposing electrode 272 are formed on the partition wall 258 and the pixel electrode 262. However, during the evaporation of the EL layer 264 and the opposing electrode 272, the evaporation source 112 is disposed under the insulating substrate 202, and the insulating substrate 202 is disposed such that the evaporation region is opposite to the evaporation source 112. That is, the partition wall 258 and the pixel electrode 262 are disposed closer to the evaporation source 112 than the insulating substrate 202.

[0122] like Figure 22 and Figure 23As shown, a hole injection layer and a hole transport layer 266 are formed on an array substrate using a vapor deposition method. The hole injection layer and the hole transport layer 266 are shared by all pixels 204. Therefore, the vapor deposition mask 300 used in the vapor deposition of the hole injection layer and the hole transport layer 266 has an opening 311 that overlaps entirely with the display area 205. (Detailed description omitted). The vapor deposition mask 300 is positioned between the array substrate and the vapor deposition source 112 such that the opening 311 overlaps with the display area 205. The hole injection layer and the hole transport layer 266 are formed by vaporizing the material contained in the hole injection layer and the hole transport layer 266 in the vapor deposition source 112.

[0123] Next, a light-emitting layer 268 is formed on the hole injection layer and the hole transport layer 266. In the case of full-color display, multiple pixels 204a (emitting red light), 204b (emitting blue light), and 204c (emitting green light) are respectively arranged in the display area 205. Pixels 204a, 204b, and 204c are simply referred to as pixels 204 unless otherwise distinguished. When the pixels 204 are arranged in a matrix, pixels 204 of different emitting colors are typically arranged periodically in sequence. The light-emitting layer 268 is formed using different processes for each emitting color. For example, when forming pixels 204a that emit red light, as shown... Figure 24 As shown, the vapor deposition mask 300 is configured such that the opening 311 of the vapor deposition mask 300 (mask body 310) overlaps with the pixel 204a, and the non-opening portion overlaps with the pixels 204b and 204c.

[0124] In this way, a vapor deposition mask 300, in which the opening 311 overlaps with pixel 204a and the non-opening portion overlaps with other pixels 204b and 204c, is arranged such that its lower surface 148 is closer to the insulating substrate 202 than its upper surface 150. Figure 24 and Figure 25 The material of the light-emitting layer 268a is deposited on the pixel 204a. Thus, the light-emitting layer 268a is selectively formed on the pixel electrode 262 of the pixel 204a. Figure 26 ).exist Figure 26 In the process of vapor deposition, the vapor deposition mask 300 (mask body 310) is configured to contact the hole injection layer and the hole transport layer 266. However, the vapor deposition mask 300 may also be configured to contact the partition wall 258, or it may be configured separately from the partition wall 258, the hole injection layer and the hole transport layer 266.

[0125] Next, light-emitting layer 268b is formed in the same manner as light-emitting layer 268a. For example... Figure 27 and Figure 28As shown, the vapor deposition mask 300 is positioned such that its lower surface 148 is closer to the insulating substrate 202 than its upper surface 150, with the opening 311 overlapping with pixel 204b and the non-opening portion overlapping with other pixels 204a and 204c. Figure 27 The material of the light-emitting layer 268b is deposited on the pixel electrode 262 of the pixel 204b. Thus, the light-emitting layer 268b is selectively formed on the pixel electrode 262 of the pixel 204b. Figure 28 The formation of the light-emitting layer 268c on pixel 204c is also carried out in the same way.

[0126] Next, an electron injection layer and an electron transport layer 270, as well as a counter electrode 272, are formed. Since the electron injection layer and electron transport layer 270, and the counter electrode 272 are shared by all pixels 204, they can be formed using the same vapor deposition mask 300 as that used for the hole injection layer and hole transport layer 266. Thus, it is possible to obtain… Figure 21 The structure is shown. Although not shown, an optical adjustment layer and a polarizing plate for adjusting the light from the light-emitting layer 268 may also be provided on the opposing electrode 272. In addition, a protective film for protecting the light-emitting element 260 and a opposing substrate may also be provided on the opposing electrode 272.

[0127] As embodiments of the present invention, the above-described embodiments can be appropriately combined and implemented as long as they do not contradict each other. Furthermore, any additions, deletions, or design changes made by those skilled in the art based on the vapor deposition masks or their manufacturing methods of the embodiments, or any additions, omissions, or changes in processes or conditions, are also included within the scope of the present invention, provided they capture the spirit of the invention.

[0128] In this specification, an EL display device is mainly illustrated as a disclosed example. Other application examples include flat panel display devices such as other self-emissive display devices, liquid crystal display devices, or electronic paper display devices with electrophoretic elements. Furthermore, applications are not particularly limited to small to large sizes.

[0129] Even if other effects are different from those brought about by the various embodiments described above, effects that can be understood from the description in this specification or effects that can be easily predicted by those skilled in the art are of course also understood as effects brought about by the present invention.

[0130] Explanation of reference numerals in the attached figures

[0131] 10: Evaporation apparatus; 100: Evaporation chamber; 102: Load locking door; 104: Substrate to be vaporized; 108: Holder; 110: Moving mechanism; 112: Evaporation source; 114: Opening / closing part; 120: Storage container; 122: Heating part; 124: Evaporation holder; 126: Heater; 128: Metal plate; 130: Opening; 132: Guide plate; 148: Lower surface; 149: Third surface; 150: Upper surface; 160a, 160b: Critical surface; 200: Display device 202: Insulating substrate; 204: Pixel; 205: Display area; 206: Driving circuit; 207: Terminal; 208: Undercoating layer; 210: Driving transistor; 212: Semiconductor film; 212a: Drain region; 212b: Source region; 212c: Channel; 214: Gate insulating film; 216: Gate electrode; 218: Interlayer insulating film; 220: Source electrode; 222: Drain electrode; 230: Holding capacitor; 232: Capacitor electrode; 240: Planarization film; 24 2: Connecting electrode; 250: Additional capacitor; 252: Additional capacitor electrode; 254: Capacitor insulating film; 256: Opening; 258: Separator wall; 260: Light-emitting element; 262: Pixel electrode; 264: EL layer; 266: Hole injection transport layer; 268: Light-emitting layer; 270: Electron injection transport layer; 272: Counter electrode; 300: Evaporation mask; 310: Mask body; 311, 315: Opening; 313: Second outer edge; 330: Holding frame; 331: First surface; 3 33: Second surface, 335: Third surface, 350: Connecting component, 353: First outer edge, 357: Upper surface, 405, 407: End, 409: Imaginary end, 410: Resist mask, 411: Opening, 420: Release layer, 421: Lower surface, 423: Side surface, 430: Resist mask, 440, 460: Bonding layer, 450: Support substrate, 461: End, 463: Lower surface, 465: Upper surface, 470: Support substrate, 480: Resist mask.

Claims

1. A method for manufacturing a vapor deposition mask, characterized in that, Includes the following steps: A mask body with multiple openings is prepared to be formed near the outer edge of the mask body. A first release layer is formed on the first surface of a retaining frame having a first surface and a second surface opposite to the first surface, in a manner that exposes a portion of the first surface. A second peeling layer is formed on the first peeling layer, such that a portion of the second peeling layer is exposed from the first peeling layer. The mask body is attached to the second release layer in a stretched state. A connecting component is formed in contact with a third surface between the first and second surfaces of the retaining frame, a side surface of the first release layer, a side surface of the second release layer, and the mask body. Remove the first and second peeling layers to expose the first surface of the retaining frame and the surface of the connecting member formed in contact with the first and second peeling layers. Specifically, when viewed from above, the first outer edge of the connecting member in the area contacting the retaining frame is located on the outer side compared to the second outer edge of the mask body that contacts the connecting member. When observing the cross-section, between the first outer edge and the second outer edge, the surface of the connecting member gradually approaches the second outer edge, and the surface of the connecting member is stepped from the first outer edge to the second outer edge. The connecting component extends into the interior of the plurality of openings.

2. The method for manufacturing a vapor deposition mask as described in claim 1, characterized in that: When observing the cross-section, the surface of the connecting member does not protrude from the second outer edge to the first outer edge between the first outer edge and the second outer edge.

3. The method for manufacturing a vapor deposition mask as described in claim 1, characterized in that: The connecting components are formed using an electroplating method.

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