Packaging process, packaging structure and display device of silicon-based OLED

Abstract

The application discloses a packaging process of a silicon-based OLED, comprising the following steps: preparing a first packaging layer on an OLED layer; preparing a second packaging layer on the first packaging layer; and preparing a third packaging layer on the second packaging layer by a PEALD device or a PECVD device, wherein the material of the third packaging layer is SiONx or SiOx. The packaging process of the silicon-based OLED can realize self-cleaning of a chamber by preparing a SiONx or SiOx film by the PEALD device or the PECVD device, so that the generation and accumulation of particles are reduced, and the product yield is improved. The application further discloses a packaging structure and a display device.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor technology. Specifically, this invention relates to a packaging process, packaging structure, and display device for silicon-based OLEDs. Background Technology

[0002] In the silicon-based OLED manufacturing industry, the encapsulation structure of ALD1 (atomic layer deposition) - PECVD (Plasma Enhanced Chemical Vapor Deposition) - ALD2 multilayer inorganic film layer stacking is currently widely adopted. Among them, ALD2 has two main functions: one is to match the optical performance of the vapor-deposited device through the unique refractive index of the film layer, and the other is to enhance the interfacial adhesion with the upper film layer.

[0003] Currently, the ALD deposition process uses ALO (alumina) and ATO (alumina titanium) films. However, the deposition chambers for these films cannot self-clean and require frequent liner replacement and thorough cleaning. This leads to the generation and accumulation of particles, making chamber maintenance difficult and liner cleaning costs high.

[0004] Therefore, particle generation in the ALD equipment process of silicon-based OLED manufacturing is one of the key factors causing yield loss, and there is a lack of corresponding technical means to solve this problem in the current technology. Summary of the Invention

[0005] This invention aims to at least solve one of the technical problems existing in the prior art. To this end, this invention provides a packaging process for silicon-based OLEDs, with the purpose of reducing the generation and accumulation of particles during the packaging process and improving product yield.

[0006] To achieve the above objectives, the technical solution adopted by the present invention is: a silicon-based OLED packaging process, comprising:

[0007] A first encapsulation layer is fabricated on the OLED layer;

[0008] A second encapsulation layer is fabricated on the first encapsulation layer;

[0009] A third encapsulation layer is prepared on the second encapsulation layer using a PEALD or PECVD device, and the material of the third encapsulation layer is SiONx or SiOx.

[0010] The thickness of the third encapsulation layer is 20–40 nm.

[0011] The material of the second encapsulation layer is SiNx.

[0012] The thickness of the second encapsulation layer is 0.5 to 1 μm.

[0013] The thickness of the second encapsulation layer is 1 μm.

[0014] The material of the first encapsulation layer is ATO.

[0015] The thickness of the first encapsulation layer is 30–50 nm.

[0016] The packaging process for the silicon-based OLED also includes:

[0017] An OC layer is fabricated on the third encapsulation layer.

[0018] The present invention also provides a packaging structure formed using the method described above.

[0019] The present invention also provides a display device including the aforementioned packaging structure.

[0020] The silicon-based OLED encapsulation process of the present invention prepares SiONx or SiOx thin films using PEALD or PECVD equipment, which enables self-cleaning of the chamber, thereby reducing particle generation and accumulation and improving product yield and reliability. Attached Figure Description

[0021] This manual includes the following figures, which illustrate the following:

[0022] Figure 1 This is a schematic diagram of the packaging structure;

[0023] The diagram is labeled as follows: 1. OLED layer; 2. First encapsulation layer; 3. Second encapsulation layer; 4. Third encapsulation layer; 5. OC layer. Detailed Implementation

[0024] The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings, in order to help those skilled in the art to have a more complete, accurate and in-depth understanding of the concept and technical solutions of the present invention, and to facilitate its implementation.

[0025] Example 1

[0026] like Figure 1 As shown, this embodiment provides a packaging process for a silicon-based OLED, including the following steps:

[0027] S1. Prepare a first encapsulation layer 2 on the OLED layer 1;

[0028] S2. Prepare a second encapsulation layer 3 on the first encapsulation layer 2;

[0029] S3. A third encapsulation layer 4 is prepared on the second encapsulation layer 3 using a PEALD device. The material of the third encapsulation layer 4 is SiOx.

[0030] S4. Prepare an OC layer 5 on the third encapsulation layer 4.

[0031] In this embodiment, in step S3 above, a third encapsulation layer 4 is prepared on the second encapsulation layer 3 using a PEALD device. The material of the third encapsulation layer 4 is SiO. Because the refractive index of the SiO film is similar to that of ALO / ATO, and its interfacial adhesion uniformity with the upper film layer (OC layer 5) and the lower film layer (SiN) is better than that of the ALO / ATO film layer, and because SiO can be prepared using a PEALD (Plasma Enhanced Atomic Layer Deposition) device with the precursor DIPAS (diisopropylaminosilane) and the reactant N2O (nitrous oxide), and because the chamber can be self-cleaned by dissociating NF3 gas using RPSC (Remote Plasma Cleaning), the cleaning time is short and the efficiency is high.

[0032] Therefore, in this embodiment, the SiOx thin film prepared by the PEALD equipment to replace the ALD2 (ALO / ATO film layer) of the silicon-based packaging structure can not only play the same role as the ALO and ATO film layers, but also realize the self-cleaning of the chamber, thereby reducing the generation and accumulation of particles, improving the yield of silicon-based products, and reducing the cost and manpower of liner replacement, thus solving the problem of difficult chamber maintenance.

[0033] Preferably, the thickness of the third encapsulation layer 4 is 20–40 nm.

[0034] Preferably, the material of the first encapsulation layer 2 is ATO, and the thickness of the first encapsulation layer 2 is 30-50 nm.

[0035] In step S1 above, during the thin film encapsulation process, after evaporation, an ALD device is used to deposit a first encapsulation layer 2 on the OLED layer 1.

[0036] In step S2 above, a second encapsulation layer 3 is prepared on the first encapsulation layer 2 using a PECVD device. The material of the second encapsulation layer 3 is SiN, and the thickness of the second encapsulation layer 3 is 0.5 to 1 μm.

[0037] like Figure 1 As shown, this embodiment also provides a packaging structure formed using the above-described silicon-based OLED packaging process.

[0038] This embodiment also provides a display device, including the above-described packaging structure.

[0039] Example 2

[0040] like Figure 1 As shown, this embodiment provides a packaging process for a silicon-based OLED, including the following steps:

[0041] S1. Prepare a first encapsulation layer 2 on the OLED layer 1;

[0042] S2. Prepare a second encapsulation layer 3 on the first encapsulation layer 2;

[0043] S3. A third encapsulation layer 4 is prepared on the second encapsulation layer 3 using a PECVD device. The material of the third encapsulation layer 4 is SiONx or SiOx.

[0044] S4. Prepare an OC layer 5 on the third encapsulation layer 4.

[0045] In this embodiment, in step S3 above, the SiONx / SiOx thin film is prepared by PECVD to replace the ALD2 (ALO / ATO film layer) of the silicon-based packaging structure. This can also achieve self-cleaning of the chamber, thereby reducing the generation and accumulation of particles. Furthermore, the PECVD equipment can form the film in one step, which can further improve the equipment's production capacity and reduce particles caused by wafer transfer.

[0046] Moreover, PECVD equipment has a fast film formation rate and can form films in the same chamber as the previous film layer in one go, which can further improve the equipment capacity and reduce particles caused by wafer transfer. In addition, SiON has a stronger water and oxygen barrier capability than SiOx, which can improve the reliability of packaging to a certain extent.

[0047] Preferably, the thickness of the third encapsulation layer 4 is 20–40 nm.

[0048] Preferably, the material of the first encapsulation layer 2 is ATO, and the thickness of the first encapsulation layer 2 is 30-50 nm.

[0049] In step S1 above, during the thin film encapsulation process, after evaporation, an ALD device is used to deposit a first encapsulation layer 2 on the OLED layer 1.

[0050] In step S2 above, a second encapsulation layer 3 is prepared on the first encapsulation layer 2 using a PECVD device. The material of the second encapsulation layer 3 is SiN, and the thickness of the second encapsulation layer 3 is 0.5 to 1 μm.

[0051] like Figure 1 As shown, this embodiment also provides a packaging structure formed using the above-described silicon-based OLED packaging process.

[0052] This embodiment also provides a display device, including the above-described packaging structure.

[0053] The present invention has been described above by way of example with reference to the accompanying drawings. Obviously, the specific implementation of the present invention is not limited to the above-described manner. Any non-substantial improvements made using the inventive concept and technical solution; or the direct application of the inventive concept and technical solution to other situations without modification, are all within the protection scope of the present invention.

Claims

1. A packaging process for silicon-based OLEDs, characterized in that, include: S1. Prepare the first encapsulation layer on the OLED layer; S2. Prepare a second encapsulation layer on the first encapsulation layer; S3. Prepare a third encapsulation layer on the second encapsulation layer using a PEALD device; In step S1, during the thin-film encapsulation process, after the vapor deposition is completed, an ALD device is used to deposit a first encapsulation layer on the OLED layer, and the material of the first encapsulation layer is ATO. In step S2, a second encapsulation layer is prepared on the first encapsulation layer using a PECVD device. The material of the second encapsulation layer is SiNx. In step S3, the NF3 gas is prepared by reacting the precursor DIPAS and the reactant N2O using a PEALD device. The chamber is then self-cleaned by dissociating the NF3 gas using RPSC. The material of the third encapsulation layer is SiO.

2. The packaging process for silicon-based OLEDs according to claim 1, characterized in that, The thickness of the third encapsulation layer is 20~40nm.

3. The packaging process for silicon-based OLEDs according to claim 1, characterized in that, The thickness of the second encapsulation layer is 0.5~1μm.

4. The packaging process for silicon-based OLEDs according to any one of claims 1 to 3, characterized in that, The thickness of the second encapsulation layer is 1 μm.

5. The packaging process for silicon-based OLEDs according to any one of claims 1 to 3, characterized in that, The thickness of the first encapsulation layer is 30~50nm.

6. The packaging process for silicon-based OLEDs according to any one of claims 1 to 3, characterized in that, Also includes: An OC layer is fabricated on the third encapsulation layer.

7. The packaging structure, characterized in that, The packaging structure is formed using the packaging process described in any one of claims 1 to 6.

8. A display device, characterized in that, Includes the packaging structure as described in claim 7.

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