High-pid-resistant photovoltaic adhesive film and preparation method thereof

Abstract

This invention discloses a photovoltaic film with high PID resistance, comprising, by mass percentage: 85%-95% ethylene-vinyl acetate copolymer resin; 0.5%-1.0% initiator; 1.0%-1.5% crosslinking aid; 0.5%-3.0% coupling agent; 1.0%-4.0% antioxidant; 0.1%-0.5% light stabilizer; 0.1%-0.5% light stabilizing synergist; 0.1%-2% UV absorber; 1.0%-4.5% graphene; and 0.5%-2% organic base. The preparation method of the photovoltaic film with high PID resistance is as follows: Step 1: Weigh the raw materials according to the above formula and mix them thoroughly to obtain a mixture; Step 2: Feed the above mixture into a twin-screw extruder for melt extrusion. The temperature of each zone of the extruder is 80-90℃. After extrusion, the mixture is calendered by three rollers, cooled by cooling rollers, embossed, and measured for thickness before shaping to obtain the photovoltaic film with high PID resistance.

Description

Technical Field

[0001] This invention belongs to the field of solar cell technology, specifically relating to a photovoltaic encapsulant film with high PID resistance and its preparation method. Background Technology

[0002] Photovoltaic encapsulating film, or photovoltaic film for short, is one of the important materials in the solar energy technology industry. It plays a crucial role in bonding solar cells to the front glass and backsheet, while also providing multiple functions such as mechanical cushioning, encapsulation protection, and UV protection for the backsheet. As a polymer material, photovoltaic film is inevitably subject to aging due to environmental erosion, making it a key material affecting the lifespan and power generation of photovoltaic modules. Research and improvement of photovoltaic film are of great significance to the development of the photovoltaic industry.

[0003] Traditional photovoltaic encapsulant films are made from ethylene-vinyl acetate copolymer (EVA) polymer as the basic material. The performance of EVA is affected by the content of vinyl acetate (VA). The higher the VA content, the smaller the crystallinity of EVA and the better the light transmittance. However, the chemical structure of VA in EVA is polar, and its electrons can migrate under voltage conditions. Photovoltaic modules using this type of EVA photovoltaic encapsulant film may experience PID effect during power generation, which will lead to a significant decrease in the power generation of the photovoltaic module.

[0004] Most existing technologies employ methods to enhance the heat dissipation capacity of photovoltaic encapsulants, reducing heat accumulation during photovoltaic module power generation to ensure normal module operation. Alternatively, they may simultaneously increase the light reflectivity of the encapsulant to improve module power generation efficiency and achieve anti-PID (Potential Inverse Reflection) effects. For example, CN111635707A discloses a white photovoltaic encapsulant composed of two stacked white reflective layers (I and II), with reflective fillers added to the white encapsulant; these fillers are selected from titanium dioxide, silicon dioxide, glass microspheres, etc. CN210489629U discloses a double-layer anti-PID high-gain white EVA and PO composite photovoltaic encapsulant, which effectively achieves diffuse reflection of light through a pyramid diffuse reflection structure design, effectively increasing module power generation efficiency. However, these methods do not fundamentally solve the cause of the PID effect in photovoltaic encapsulants. Summary of the Invention

[0005] The purpose of this invention is to provide a photovoltaic film with high PID resistance and its preparation method, so as to overcome the defect of poor PID resistance of existing traditional EVA photovoltaic films from the root. Moreover, the obtained photovoltaic film with high PID resistance also has good light transmittance and mechanical properties.

[0006] The technical solution of this invention:

[0007] A photovoltaic encapsulant film with high PID resistance, comprising, by weight percentage, the following raw materials:

[0008] 85%-95% ethylene-vinyl acetate copolymer resin;

[0009] Initiator 0.5%-1.0%;

[0010] Crosslinking aid 1.0%-1.5%; coupling agent 0.5%-3.0%;

[0011] Antioxidant content: 1.0%-4.0%;

[0012] Light stabilizer 0.1%-0.5%;

[0013] Light stabilizer 0.1%-0.5%;

[0014] UV absorber 0.1%-2%;

[0015] Graphene content: 1.0%-4.5%;

[0016] Organic bases 0.5%-2%;

[0017] The structure of the light-stabilizing synergist is shown in Formula I: ,

[0018] In the above formula, a is any positive integer from 5 to 7, b is any positive integer from 2 to 5, and * represents the connection site of the repeating unit; the role of the light-stabilizing synergist is to capture free radicals that appear during ultraviolet irradiation, thereby effectively increasing the stability of the photovoltaic film. The reaction generated when capturing free radicals is shown below: .

[0019] In some embodiments, the method for preparing the photostable synergist includes step 1: preparing monomer A, wherein the structure of monomer A is shown in Formula II: ;

[0020] Step 2: Disperse monomer A and vinyl acetate in a solvent, add an initiator to initiate the reaction, and simultaneously emulsify using an emulsifier to obtain an emulsion;

[0021] Step 3: Slowly add the emulsion obtained in Step 2 to water, centrifuge and wash after the reaction is complete to obtain the light-stabilized synergist.

[0022] In step 2, the total mass of monomer A and ethyl acetate accounts for 30%-40% of the total mass of the solvent.

[0023] In step 2, the initiator is sodium persulfate, and the mass of the initiator added accounts for 1-3% of the total mass of monomer A and vinyl acetate.

[0024] In step 2, the emulsification speed is 6000-10000 rpm, the emulsification time is 30-60 min, and the emulsification temperature is controlled below 30℃.

[0025] In step 3, the emulsion is added over a period of 3-6 hours at a temperature of 50-60°C.

[0026] The volume ratio of water in step 3 to solvent in step 2 is 10:1-3.

[0027] In some embodiments, the method for preparing monomer A includes,

[0028] Step 1: Add p-bromostyrene and 2,2,6,6-tetramethyl-4-piperidinol to the reactor, add organic solvent and catalyst and reflux reaction. After the reaction is completed, add water, let stand and separate into layers to obtain the organic phase.

[0029] Step 2: After concentrating the organic phase from Step 1, crystallize and purify it to obtain crystals;

[0030] Step 3: Take the crystals obtained in Step 2, add them to the reactor, add methanol and sodium carbonate, stir evenly, add hydrogen peroxide solution dropwise at a uniform rate, add organic solvent after the addition is complete, extract and collect the organic phase, remove the solvent by rotary evaporation to obtain monomer A.

[0031] In step 1, the molar ratio of p-bromostyrene and 2,2,6,6-tetramethyl-4-piperidinol is 1-1.2:1-1.2.

[0032] The organic solvent is selected from one or more combinations of dichloromethane, methanol, acetone, chloroform, and carbon tetrachloride. In step 1, the catalyst is potassium carbonate, and the molar ratio of the catalyst to p-bromostyrene is 1:0.1-0.15.

[0033] The reflux reaction in step 1 is carried out at a temperature of 30-40℃ for 10-20 h.

[0034] The crystallization purification in step 2 specifically includes crystallization purification using a mixed solvent of ethanol and n-hexane, wherein the volume ratio of ethanol to n-hexane in the mixed solvent is 1:10-15.

[0035] In step 3, the molar ratio of sodium carbonate to the molar ratio of the crystal is 0.4-0.6:1.

[0036] In step 3, the hydrogen peroxide solution has a hydrogen peroxide content of 30%, and 500-600 ml of hydrogen peroxide solution needs to be added for every 1 mol of crystals. The hydrogen peroxide solution is added over a period of 2-4 hours.

[0037] The initiator is a compound of ethyl 3,3-di(tert-butylperoxy)butyrate and tert-butyl peroxide-2-ethylhexyl carbonate.

[0038] The crosslinking aid is selected from one or two or more combinations of triallyl isocyanurate, trimethylolpropane trimethacrylate, triallyl cyanurate, ethylene glycol dimethacrylate, and vinyl butyrate.

[0039] The coupling agent is one or a combination of two or more of γ-aminopropyltriethoxysilane (KH550), γ-glycidoxypropyltrimethoxysilane (KH560), and γ-(methacryloyloxy)propyltrimethoxysilane (KH570).

[0040] The antioxidant includes a primary antioxidant and a secondary antioxidant. The primary antioxidant is β-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate octadecyl alcohol ester, and the secondary antioxidant is selected from one or more combinations of tris(4-nonylphenol) phosphite and tris(2,4-di-tert-butylphenyl) phosphite. The mass ratio of the primary antioxidant to the secondary antioxidant is 1:1-4.

[0041] The light stabilizer is bis(2,2,6,6-tetramethyl-4-piperidinyl) sebacate.

[0042] The ultraviolet absorber is 2-(2'-hydroxy-3'-tert-butyl-5'-methylphenyl)-5-chlorobenzotriazole.

[0043] The organic base is methyl 3-aminoacrylate.

[0044] On the other hand, this application also provides a method for preparing a photovoltaic encapsulant film with high PID resistance as described above, specifically including,

[0045] Step 1: Weigh the raw materials according to the above formula and mix them thoroughly to obtain a mixture;

[0046] Step 2: The above mixture is fed into a twin-screw extruder for melt extrusion. The temperature of each zone of the extruder is 80-90℃. After extrusion, the mixture is calendered by three rollers, cooled by cooling rollers, embossed, and then shaped after thickness measurement to obtain the high PID-resistant photovoltaic film.

[0047] The beneficial effects of this invention are:

[0048] 1. This invention utilizes a self-made light-stabilizing synergist suitable for photovoltaic films. This synergist can capture free radicals generated during ultraviolet irradiation and maintain performance stability even after free radical capture, thereby significantly increasing the stability of the photovoltaic film and fundamentally eliminating the cause of PID (Potential Inhibition of Dielectric Properties). 2. The photovoltaic film prepared by this method incorporates appropriate amounts of graphene and methyl 3-aminoacrylate. Graphene provides a stable conjugated network structure to block electron migration and simultaneously forms crosslinks with methyl 3-aminoacrylate, making the EVA film structure more compact and reducing the ion content between the glass and the film. This improves the anti-PID effect of the EVA photovoltaic film while ensuring good light transmittance. Attached Figure Description

[0049] Figure 1 This is the NMR spectrum of monomer A. Detailed Implementation

[0050] The present invention will be described below with reference to specific embodiments. It should be noted that the following embodiments are examples of the present invention and are used only to illustrate the invention, not to limit it. Other combinations and various modifications within the scope of the present invention can be made without departing from its spirit or scope.

[0051] Unless otherwise specified, all chemical reagents used in this invention are commercially available analytical grade. In Examples 1-3 and Comparative Examples 1-4, the ethylene-vinyl acetate copolymer resin used was purchased from Guangzhou Kafen Biotechnology Co., Ltd., CAS No.: 24937-78-8; the composite initiator used was a mixture of ethyl 3,3-di(tert-butylperoxy)butyrate and tert-butyl peroxide-2-ethylhexyl carbonate in a mass ratio of 1:1; the crosslinking aid used was triallyl isocyanurate, purchased from Nippon Chemical Co., Ltd. as “TAIC”; the coupling agent used was γ-aminopropyltriethoxysilane (KH550); the antioxidants used included a primary antioxidant and a secondary antioxidant, with the primary antioxidant being β-(3-)-( Octadecyl 5-di-tert-butyl-4-hydroxyphenyl)propionate was purchased from Hubei Shishun Biotechnology Co., Ltd.; the co-antioxidant was tris(4-nonylphenol) phosphite (antioxidant 1178), purchased from Hubei Zhenbo Chemical Co., Ltd.; the mass ratio of the primary antioxidant to the co-antioxidant was 1:1; the light stabilizer used was bis(2,2,6,6-tetramethyl-4-piperidinyl) sebacate (light stabilizer 770), purchased from Wuhan Xinxin Jiali Biotechnology Co., Ltd.; the ultraviolet absorber used was 2-(2'-hydroxy-3'-tert-butyl-5'-methylphenyl)-5-chlorobenzotriazole, purchased from Hangzhou Xinyang Sanyou Fine Chemical Co., Ltd.; the graphene used was purchased from Zhengzhou Yiteng Chemical Products Co., Ltd., item number 31; the organic base used was methyl 3-aminoacrylate, purchased from Sigma-Aldrich (Shanghai) Trading Co., Ltd.

[0052] Preparation of monomer A

[0053] Step 1: 1 mol of p-bromostyrene and 0.98 mol of 2,2,6,6-tetramethyl-4-piperidinol were added to the reactor, along with 2000 mL of dichloromethane as the organic solvent and 20 g of potassium carbonate as the catalyst. The mixture was refluxed at 36 °C for 10 hours. After the reaction was completed, 3000 mL of deionized water was added, and the mixture was stirred for 1 hour and allowed to stand to separate into layers to obtain the organic phase.

[0054] Step 2: The organic phase from Step 1 was rotary evaporated at 40°C to remove the solvent dichloromethane. The phase was then purified by crystallization using a mixed solvent with a volume ratio of ethanol to n-hexane of 1:10 to obtain crystals.

[0055] Step 3: Take 1 mol of the crystals obtained in Step 2 and add them to the reactor. Add 2000 mL of methanol and 50 g of sodium carbonate and stir until homogeneous. Add 500 mL of a 30% hydrogen peroxide aqueous solution to the reactor at a constant rate over 4 hours. After the addition is complete, add 1000 mL of dichloromethane, extract and collect the organic phase, and remove the solvent by rotary evaporation at 40°C to obtain monomer A.

[0056] like Figure 1 As shown, 1 ¹H-NMR (400 MHz, Chloroform-d): δ7.2, 6.7 are characteristic peaks of hydrogen on the benzene ring; 1.13-1.15 are characteristic peaks of hydrogen on the methyl ring; 5.18, 5.60, 6.63 are characteristic peaks of hydrogen on the propylene double bond; 3.3-3.4 are characteristic peaks of CH linked to oxygen on the six-membered ring; confirming that the structure of monomer A is as shown in Formula II.

[0057] Preparation of light-stabilized synergist 1

[0058] 5 mol of monomer A and 5 mol of vinyl acetate were dispersed in a 5% PVA aqueous solution to make the solid content 30%. Sodium persulfate of 1% of the total mass of monomer A and vinyl acetate was added to start the reaction. Simultaneously, emulsification was carried out using an emulsifier at a speed of 6000 rpm for 30 min and at a temperature of 30℃ to obtain an emulsion.

[0059] The above emulsion was slowly added dropwise to a reactor containing 300 g of water. The reactor temperature was maintained at 50°C, and the dropwise addition process was maintained for 6 hours. The reaction was continued until the reaction was completed. The water was removed by centrifugation, and the product was washed with a large amount of water to obtain the light-stabilized synergist 1.

[0060] Preparation of light-stabilized synergist 2

[0061] 5 mol of monomer A and 2 mol of vinyl acetate were dispersed in a 5% PVA aqueous solution to make the solid content 30%. Sodium persulfate of 1% of the total mass of monomer A and vinyl acetate was added to start the reaction. Simultaneously, emulsification was carried out using an emulsifier at a speed of 6000 rpm for 30 min and at a temperature of 30℃ to obtain an emulsion.

[0062] The above emulsion was slowly added dropwise to a reactor containing 300 g of water. The reactor temperature was maintained at 50°C, and the dropwise addition process was maintained for 6 hours. The reaction was continued until the reaction was completed. The water was removed by centrifugation, and the product was washed with a large amount of water to obtain the light-stabilized synergist 2.

[0063] Preparation of light-stabilized synergist 3

[0064] 7 mol of monomer A and 5 mol of vinyl acetate were dispersed in a 5% PVA aqueous solution to make the solid content 30%. Sodium persulfate of 1% of the total mass of monomer A and vinyl acetate was added to start the reaction. Simultaneously, emulsification was carried out using an emulsifier at a speed of 6000 rpm for 30 min and at a temperature of 30℃ to obtain an emulsion.

[0065] The above emulsion was slowly added dropwise to a reactor containing 300 g of water. The reactor temperature was maintained at 50°C, and the dropwise addition process was maintained for 6 hours. The reaction was continued until the reaction was completed. The water was removed by centrifugation, and the product was washed with a large amount of water to obtain the light-stabilized synergist 3.

[0066] Examples 1-3

[0067] Take 87.4 g of ethylene-vinyl acetate copolymer resin, 1 g of composite initiator (a compound of ethyl 3,3-di(tert-butylperoxy)butyrate and tert-butyl peroxide-2-ethylhexyl carbonate), 1.2 g of crosslinking aid, 2.2 g of coupling agent, 2 g of antioxidant, 0.5 g of light stabilizer, 1.5 g of UV absorber, 2.8 g of graphene, and 1 g of organic base, and mix them evenly with 0.4 g of the above-mentioned light stabilizer synergists 1-3 to obtain mixture 1-3.

[0068] The above mixtures 1-3 are fed into a twin-screw extruder for melt extrusion. The temperature of each zone of the extruder is 90°C. After extrusion, the mixtures are calendered by three rollers, cooled by rollers, embossed, and then shaped after thickness measurement to obtain the high-resistance PID photovoltaic film 1-3.

[0069] Comparative Example 1

[0070] Comparative Example 1 follows the same implementation method as Example 1, except that the mass of EVA main resin added in the formulation is 90.2 g, and the mass of graphene added is 0 g.

[0071] Comparative photovoltaic film 1 was prepared.

[0072] Comparative Example 2

[0073] Comparative Example 2 follows the same implementation method as Example 1, except that the mass of EVA main resin added in the formulation is 88.4 g, and the mass of organic base added is 0 g.

[0074] Comparative photovoltaic film 2 was prepared.

[0075] Comparative Example 3

[0076] Comparative Example 3 follows the same implementation method as Example 1, except that the mass of EVA main resin added in the formulation is 91.2 g, and the mass of organic base and graphene added is 0 g.

[0077] Comparative photovoltaic film 3 was prepared.

[0078] Comparative Example 4

[0079] Comparative Example 4 follows the same implementation method as Example 1, except that the mass of EVA main resin added in the formulation is 87.8 g, and the mass of light stabilizer added is 0 g.

[0080] Comparative photovoltaic film 4 was prepared.

[0081] The high PID-resistant photovoltaic films 1-3 and the control photovoltaic films 1-4 prepared above were subjected to the following performance tests. The test results are shown in Table 1 and Table 2.

[0082] Test 1: Tensile Strength: Prepare the above-mentioned adhesive film with dimensions of 300mm*150mm, and cure it at 140℃ for min. The cured sample should be free of bubbles and have a uniform thickness. According to the requirements of GB / T 1040.3—2006, prepare dumbbell-shaped specimens according to type 5, with at least 5 specimens prepared for each group; conduct tensile tests on the adhesive film specimens according to GB / T1040.1, with a test speed of 100mm / min ± 10mm / min, and calculate the tensile strength.

[0083] Test 2: Light transmittance: Take a piece of adhesive film with a size of 50mm*50mm, prepare 3 samples according to the curing process of Test 1, test the samples according to the spectrophotometer method of GB / T2410—2008, calculate the solar transmittance in the spectral range of 380nm-1100nm and take the average value.

[0084] Test 3: PID Test: Using conventional 166 bifacial P-type PERC cells, the modules A1-A3 of the examples and the modules B1-B4 of the comparative examples were prepared sequentially through cell stringing, glass-encapsulant-cell-encapsulant-KPF backsheet stacking, and lamination (140℃ lamination, vacuum for 6 min, pressure holding for 10 min). Power degradation tests were conducted on the prepared modules according to standards IEC61215 and IEC61370. Tests were performed at 85℃, 85% humidity, and an applied voltage of -1500V for 96 h and 192 h, respectively, comparing the power changes of the example and comparative modules before and after the tests.

[0085] Table 1. Test results of high PID-resistant photovoltaic films 1-3 and comparative photovoltaic films 1-4 (1-2).

[0086] Table 2. Test results data for components A1-A3 in the embodiment and components B1-B4 in the comparative example.

[0087] The above performance tests show that, compared with the comparative photovoltaic films 1-4, the mechanical properties of the film with added graphene and organic base are significantly improved, with a tensile strength of over 27 MPa, which is much greater than that of the comparative photovoltaic films. Furthermore, its PID attenuation is significantly reduced, and the light transmittance is almost unaffected. This fully demonstrates the feasibility of adopting this solution.

[0088] Compared with the comparative examples B1-3, the synergistic effect between graphene and the organic base 3-aminomethyl acrylate in this application can be seen in Example A1. It can provide a stable conjugated network structure to block electron migration, making the structure of the EVA film more compact, reducing the ion content between the glass and the film, improving the anti-PID effect of the EVA photovoltaic film while ensuring good light transmittance, and enhancing the mechanical properties of the photovoltaic film.

[0089] Compared with the comparative example component B4, it can be seen that the self-made light-stabilizing synergist provided by the present invention can effectively capture free radicals that appear during ultraviolet irradiation, and can still maintain performance stability after capturing free radicals, thereby increasing the long-term stability of photovoltaic films.

[0090] This invention can also be implemented in various other ways. Without departing from the spirit and essence of this invention, those skilled in the art can make various corresponding changes and modifications according to this invention, but these corresponding changes and modifications should all fall within the protection scope of the appended claims.

Claims

1. A high PID resistant photovoltaic encapsulant, characterized in that: By weight percentage, it includes the following raw materials: 85%-95% ethylene-vinyl acetate copolymer resin; Initiator 0.5%-1.0%; Crosslinking aid 1.0%-1.5%; Coupling agent 0.5%-3.0%; Antioxidant content: 1.0%-4.0%; Light stabilizer 0.1%-0.5%; Light stabilizer 0.1%-0.5%; UV absorber 0.1%-2%; Graphene content: 1.0%-4.5%; Organic bases 0.5%-2%; The structure of the light-stabilizing synergist is shown in Formula I: , In the above formula, a is any positive integer from 5 to 7, b is any positive integer from 2 to 5, and * represents the connection site of the repeating unit; the role of the light-stabilizing synergist is to capture free radicals that appear during ultraviolet irradiation, thereby effectively increasing the stability of the photovoltaic film. The reaction generated when capturing free radicals is shown below: 。 2. The photovoltaic encapsulant film with high PID resistance as described in claim 1, characterized in that: The preparation method of the light-stabilized synergist includes step 1: preparing monomer A, wherein the structure of monomer A is shown in formula II: ; Step 2: Disperse monomer A and vinyl acetate in a solvent, add an initiator to initiate the reaction, and simultaneously emulsify using an emulsifier to obtain an emulsion; Step 3: Slowly add the emulsion obtained in Step 2 to water, centrifuge and wash after the reaction is complete to obtain the light-stabilizing synergist; In step 2, the total mass of monomer A and ethyl acetate accounts for 30%-40% of the total mass of the solvent. The initiator in step 2 is sodium persulfate, and the added mass of the initiator accounts for 1-3% of the total mass of monomer A and vinyl acetate. The emulsification rate in step 2 is 6000-10000 rpm, the emulsification time is 30-60 min, and the emulsification temperature is controlled below 30℃. In step 3, the emulsion is added in drops for 3-6 h at a temperature of 50-60℃. The volume ratio of water in step 3 to solvent in step 2 is 10:1-3.

3. The photovoltaic encapsulant film with high PID resistance as described in claim 2, characterized in that: The method for preparing monomer A includes step 1: adding p-bromostyrene and 2,2,6,6-tetramethyl-4-piperidinol into a reactor, adding an organic solvent and a catalyst to carry out a reflux reaction, and after the reaction is completed, adding water, allowing it to stand and separate into layers to obtain an organic phase; Step 2: After concentrating the organic phase from Step 1, crystallize and purify it to obtain crystals; Step 3: Take the crystals obtained in Step 2, add them to the reactor, add methanol and sodium carbonate, stir evenly, add hydrogen peroxide solution dropwise at a uniform rate, add organic solvent after the addition is complete, extract and collect the organic phase, remove the solvent by rotary evaporation to obtain monomer A; In step 1, the molar ratio of p-bromostyrene to 2,2,6,6-tetramethyl-4-piperidinol is 1-1.2:1-1.2; the organic solvent is selected from one or more combinations of dichloromethane, methanol, acetone, chloroform, and carbon tetrachloride; the catalyst in step 1 is potassium carbonate; the molar ratio of the catalyst to the p-bromostyrene is 1:0.1-0.15; the reflux reaction temperature in step 1 is 30-40℃; and the reaction time is 10-20 h. In step 2, the crystallization purification specifically includes crystallization purification using a mixed solvent of ethanol / n-hexane, wherein the volume ratio of ethanol to n-hexane in the mixed solvent is 1:10-15; in step 3, the molar ratio of sodium carbonate to the molar ratio of crystals is 0.4-0.6:1; in step 3, the hydrogen peroxide aqueous solution has a hydrogen peroxide content of 30%, and 500-600 ml of hydrogen peroxide aqueous solution needs to be added dropwise for every 1 mol of crystals, with the hydrogen peroxide aqueous solution being added dropwise for 2-4 hours.

4. The photovoltaic encapsulant film with high PID resistance as described in claim 1, characterized in that: The initiator is a compound of ethyl 3,3-di(tert-butylperoxy)butyrate and tert-butyl peroxide-2-ethylhexyl carbonate.

5. The photovoltaic encapsulant film with high PID resistance as described in claim 1, characterized in that: The crosslinking aid is selected from one or two or more combinations of triallyl isocyanurate, trimethylolpropane trimethacrylate, triallyl cyanurate, ethylene glycol dimethacrylate, and vinyl butyrate.

6. The photovoltaic encapsulant film with high PID resistance as described in claim 1, characterized in that: The coupling agent is one or a combination of two or more of γ-aminopropyltriethoxysilane (KH550), γ-glycidoxypropyltrimethoxysilane (KH560), and γ-(methacryloyloxy)propyltrimethoxysilane (KH570).

7. The photovoltaic encapsulant film with high PID resistance as described in claim 1, characterized in that: The antioxidant includes a primary antioxidant and a secondary antioxidant. The primary antioxidant is β-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate octadecyl alcohol ester, and the secondary antioxidant is selected from one or more combinations of tris(4-nonylphenol) phosphite and tris(2,4-di-tert-butylphenyl) phosphite. The mass ratio of the primary antioxidant to the secondary antioxidant is 1:1-4.

8. The photovoltaic encapsulant film with high PID resistance as described in claim 1, characterized in that: The light stabilizer is bis(2,2,6,6-tetramethyl-4-piperidinyl) sebacate.

9. The photovoltaic encapsulant film with high PID resistance as described in claim 1, characterized in that: The ultraviolet absorber is 2-(2'-hydroxy-3'-tert-butyl-5'-methylphenyl)-5-chlorobenzotriazole, and the organic base is methyl 3-aminoacrylate.

10. A method for preparing a photovoltaic film with high PID resistance as described in claim 1, characterized in that: Specifically, the steps include the following: Step 1: Weigh the raw materials according to the above formula and mix them thoroughly to obtain a mixture; Step 2: The above mixture is fed into a twin-screw extruder for melt extrusion. The temperature of each zone of the extruder is 80-90℃. After extrusion, the mixture is calendered by three rollers, cooled by cooling rollers, embossed, and then shaped after thickness measurement to obtain the high PID-resistant photovoltaic film.

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