Deposition apparatus

Abstract

The application discloses a deposition device which introduces gas for coating raw materials, and comprises a chamber mechanism and a gas guiding mechanism. The chamber mechanism is configured to rotate around a first axis and comprises a working cavity provided with two oppositely arranged baffles in a direction perpendicular to the first axis, and the working cavity comprises deposition wall surfaces arranged between the baffles and perpendicular to the first axis. The gas guiding mechanism comprises a guiding part configured to move the gas to the deposition wall surfaces. The first direction is the flow direction of the gas entering the working cavity, the second direction is the linear velocity direction of the working cavity at the position of the guiding part, the included angle A between the first direction and the second direction satisfies 0° < A < 90°. In the application, the flow direction of the gas entering the working cavity is changed to prevent the gas from being blocked by the baffles, the reaction rate is increased, and the coating effect is improved without increasing the production cost.

Description

Technical Field

[0001] This application relates to the field of coating technology, and in particular to a deposition apparatus. Background Technology

[0002] The uniformity of chemical vapor deposition (CVD) films is closely influenced by the flow field distribution of the reactant gases. Although atomic layer deposition (ALD) films primarily rely on surface chemical reactions and possess self-limiting characteristics, the ideal ALD process has limited dependence on the flow field distribution of the reactant gases. However, in high-speed mass production environments, excessive reactant gases or insufficient purging time can lead to reactions similar to CVD, in which case the film uniformity becomes related to the gas flow field distribution. Current techniques typically avoid CVD by increasing the purging gas flow rate and time, but this reduces production efficiency and increases costs, negatively impacting the application of ALD technology in high-speed industrial production. Separating multiple reaction chambers with baffles allows for simultaneous processing of multiple chambers. However, due to the rotation of the reaction chambers, when gas is injected at an angle, it is blocked by the baffles, resulting in significant non-uniformity in the coating and reduced reaction efficiency. Summary of the Invention

[0003] The main objective of this application is to provide a deposition apparatus that addresses the technical problem that gas is blocked by a partition, resulting in significant unevenness in the coating and reduced reaction efficiency.

[0004] To achieve the above objectives, this application proposes a deposition apparatus that introduces gas for depositing a film onto a raw material. The deposition apparatus includes:

[0005] A chamber mechanism configured to rotate about a first axis, the chamber mechanism including a working chamber, along a direction perpendicular to the first axis, the working chamber having two oppositely arranged partitions, the working chamber including a deposition wall surface disposed between the partitions, the deposition wall surface being perpendicular to the first axis;

[0006] A gas guiding mechanism, the gas guiding mechanism including a guide portion configured to move the gas to the deposition wall surface;

[0007] Wherein, the first direction is the flow direction of the gas when it enters the working chamber, the second direction is the linear velocity direction of the working chamber located at the guide part, and the angle A between the first direction and the second direction satisfies: 0° <A<90°。

[0008] In some embodiments, the included angle A satisfies: 30°≤A≤60°.

[0009] In some embodiments, the gas flow rate is Va, the linear velocity of the working chamber at the gas inlet is Vb, and the included angle A satisfies: cosA=Va / Vb.

[0010] In some embodiments, the air guiding mechanism includes a plurality of the guide portions, each of the guide portions being circumferentially distributed around the first axis;

[0011] The chamber mechanism includes multiple working chambers, each of which is circumferentially distributed around the first axis.

[0012] In some embodiments, the gas includes a reactive gas and a purge gas. The reactive gas is used to coat the raw material, and the purge gas is used to remove excess reactive gas. The guide portions respectively introduce the reactive gas and the purge gas.

[0013] In some embodiments, the chamber mechanism includes an extraction port, the axis of which is collinear with the first axis, and the extraction port is used to extract gas.

[0014] In some embodiments, the guide portion includes a plurality of guide holes, and the second axis is the axis of each of the guide holes, and the second axis is parallel to the first direction.

[0015] A second aspect of this application also provides a deposition apparatus that deposits a film on a raw material by introducing a gas, the deposition apparatus comprising:

[0016] A chamber mechanism configured to rotate about a first axis, the chamber mechanism including a working chamber along a direction perpendicular to the first axis, the working chamber having two oppositely arranged partitions, the working chamber including a deposition wall surface disposed between the partitions, the deposition wall surface being perpendicular to the first axis, and the deposition wall surface including a working area;

[0017] A gas guiding mechanism, the gas guiding mechanism including a guide portion configured to move the gas to the deposition wall surface;

[0018] Wherein, the first direction is the flow direction of the gas when it enters the working chamber, the second direction is the tangential direction of the rotation direction of the working chamber located at the guide part, the first direction and the second direction are at an angle B, the angle B satisfies: 0°≤B≤180°, the working area is provided with a first side and a second side arranged opposite to each other, along the second direction, the second side is located below the first side, the direction of the second side and the second direction are at an angle C, the angle C satisfies: 0°≤C≤90°.

[0019] In some embodiments, the included angle B satisfies: 60° ≤ B ≤ 120°;

[0020] The included angle C satisfies: 30° ≤ C ≤ 60°.

[0021] In some embodiments, the included angle B satisfies: B = 90°, the flow rate of the gas is Va, the linear velocity of the working chamber is Vb, and the included angle C satisfies: tanC = Vb / Va.

[0022] Compared with the prior art, the beneficial effects of the present application are as follows:

[0023] In the technical solution of the present application, the first direction is the flow direction when the gas enters the working chamber, the second direction is the linear velocity direction of the working chamber at the position of the guiding portion, and the included angle between the first direction and the second direction is angle A. In the prior art, angle A satisfies: A = 90°. When the gas enters the working chamber, the obtuse angle between the flow direction relative to the chamber mechanism and the linear velocity direction of the working chamber at the position of the guiding portion is relatively large, so that the range of the gas directly hitting the baffle is relatively large, and the area of the included angle between the baffle and the deposition wall surface that the gas cannot cover is relatively large. In this embodiment, through the action of the guiding mechanism, angle A satisfies: 0° < A < 90°. When the gas enters the working chamber, the obtuse angle between the flow direction relative to the chamber mechanism and the linear velocity direction of the working chamber at the position of the guiding portion is relatively small. So that in the working state, that is, when the chamber mechanism rotates around the first axis, the acute angle between the movement direction of the gas relative to the chamber mechanism and the second direction is relatively large, making the gas flow smoothly, so as to avoid the gas being unable to cover the included angle between the baffle and the deposition wall surface, expanding the coverage area of the gas, and reducing the gas directly hitting the baffle, so as to reduce the turbulence generated between the baffle and the deposition wall surface, so that the gas forms a flow layer between the deposition wall surfaces, increasing the reaction rate without increasing the production cost, improving the uniformity of the gas flow in the working chamber, and improving the coating uniformity.

[0024] Further, when the chamber mechanism rotates around the first axis, the included angle between the movement direction of the gas relative to the chamber mechanism and the second direction is 90°, making the gas flow smoothly, so as to avoid the gas being unable to cover the included angle between the baffle and the deposition wall surface, expanding the coverage area of the gas, and reducing the gas directly hitting the baffle, so as to reduce the turbulence generated between the baffle and the deposition wall surface, so that the gas forms a flow layer between the deposition wall surfaces, further improving the uniformity of the gas flow in the working chamber, and further increasing the reaction rate without increasing the production cost, thereby further improving the coating uniformity. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0026] Figure 1 This is a side view of the chamber mechanism in the first embodiment of this application; wherein, Va is the flow velocity of gas when it enters the working chamber, and Vd is the angular velocity direction of the working chamber.

[0027] Figure 2 This is a schematic diagram showing the flow velocity Va of the gas entering the working chamber in the first embodiment of this application, the linear velocity Vb of the working chamber at the gas entry point, and the direction of gas movement Vc relative to the working chamber; wherein, the included angle A is the angle between the first direction and the second direction.

[0028] Figure 3 This is a cross-sectional view of the air guiding mechanism in the first embodiment of this application; the air guiding mechanism includes a guide portion and a guide hole, and a first direction and a second direction are shown therein, with angle A being the angle between the first direction and the second direction;

[0029] Figure 4 This is a partial enlarged view of the chamber mechanism in the second embodiment of this application; the deposition wall includes the working area, and Vd is the angular velocity direction of the working chamber;

[0030] Figure 5 This is a schematic diagram showing the flow velocity Va of the gas entering the working chamber in the second embodiment of this application, the linear velocity Vb of the working chamber at the gas entry point, and the direction of gas movement Vc relative to the working chamber; wherein, the included angle B is the angle between the first direction and the second direction.

[0031] Figure 6 This is a partial enlarged view of the deposition apparatus in the second embodiment of this application; the working area includes a second side, and a first direction and a second direction are shown therein; wherein, the included angle B is the angle between the first direction and the second direction;

[0032] Figure 7 This is a side view of the deposition apparatus in the third embodiment of this application; wherein, raw material is placed on the deposition wall, and Vd is the angular velocity direction of the working chamber;

[0033] Figure 8 This is a side view of the deposition apparatus in the fourth embodiment of this application; wherein the working areas are arranged at intervals, and Vd is the angular velocity direction of the working chamber;

[0034] Figure 9This is a side view of the deposition apparatus in the fifth embodiment of this application; where Vd is the direction of angular velocity movement of the working chamber;

[0035] Figure 10 This is a side view of a deposition apparatus in the prior art; showing the area on the deposition wall that cannot be covered by gas and the area where gas directly hits the baffle, where Vc is the direction of gas movement relative to the working chamber and Vd is the direction of angular velocity movement of the working chamber.

[0036] Explanation of icon numbers:

[0037] Deposition device 10;

[0038] Chamber mechanism 100;

[0039] Working chamber 110;

[0040] Partition 120;

[0041] Deposition wall 130;

[0042] Work area 131;

[0043] First side 1311;

[0044] The second side is 1312;

[0045] 140mm vent;

[0046] Air guiding mechanism 200;

[0047] Guide section 210;

[0048] Guide hole 220;

[0049] Raw material 20;

[0050] Guide device 30;

[0051] Working chamber device 40;

[0052] 50 partition device;

[0053] Deposition wall device 60;

[0054] First direction X;

[0055] Second direction Y.

[0056] The realization of the purpose, functional features and advantages of this application will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0057] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0058] It should be noted that if the embodiments of this application involve directional indicators (such as up, down, left, right, front, back, etc.), the directional indicators are only used to explain the relative positional relationship and movement of the components in a specific posture. If the specific posture changes, the directional indicators will also change accordingly.

[0059] Furthermore, when an element is described as being "fixed to" another element, it can be directly on the other element, or one or more intermediate elements may exist between them. When an element is described as being "connected to" another element, it can be directly connected to the other element, or one or more intermediate elements may exist between them.

[0060] Furthermore, if the embodiments of this application involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the use of "and / or," "and / or," or "and / or" throughout the text implies three parallel solutions. For example, "A and / or B" includes solution A, solution B, or a solution where A and B are simultaneously satisfied. Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed in this application.

[0061] In high-speed mass production equipment, excessive reactant gas or insufficient purging time can lead to reactions similar to chemical vapor deposition (CVD). In this case, the uniformity of the thin film is related to the gas flow field distribution. Current technologies typically avoid CVD by increasing the purging gas flow rate and time, but this reduces production efficiency and increases production costs, negatively impacting the application of atomic layer deposition (ALD) technology in high-speed industrial production. Separating multiple reaction chambers with baffles allows for simultaneous processing of multiple chambers. However, when the reaction chambers rotate, causing the gas to enter at an angle relative to the chambers, the gas is blocked by the baffles, resulting in significant unevenness in the coating and reduced reaction efficiency.

[0062] To achieve the above objectives, see [link to relevant documentation]. Figures 1 to 3 as well as Figure 7 This application proposes a deposition apparatus 10, which uses gas to deposit a film on a raw material 20. The deposition apparatus 10 includes a chamber mechanism 100 and a gas guiding mechanism 200. The external profile of the deposition apparatus 10 can have various structures. In some embodiments, the deposition apparatus 10 can be cuboid. In other embodiments, the deposition apparatus 10 can be cylindrical. In other embodiments, the deposition apparatus 10 can be polygonal, etc., depending on the specific circumstances. This application uses a cylindrical deposition apparatus 10 as an example.

[0063] The external profile of the chamber mechanism 100 can have various structures. In some embodiments, the chamber mechanism 100 can be a cuboid. In other embodiments, the chamber mechanism 100 can be a cylinder. In other embodiments, the chamber mechanism 100 can be a polygon, etc., depending on the actual situation. This application embodiment uses a cylindrical chamber mechanism 100 as an example. The chamber mechanism 100 is configured to rotate about a first axis, which is the axis of the cylindrical chamber mechanism 100. The chamber mechanism 100 includes a working chamber 110. In some embodiments, the chamber mechanism 100 can be a cuboid. In other embodiments, the chamber mechanism 100 can be a cylinder. In other embodiments, the chamber mechanism 100 can be a polygon, etc., depending on the actual situation. This application embodiment uses a chamber mechanism 100 including a sector-shaped cylinder as an example. Along a direction perpendicular to the first axis, the working chamber 110 is provided with two opposing partitions 120, the length direction of each partition 120 being perpendicular to the direction of the first axis. The working chamber 110 includes a deposition wall 130 for placing raw material 20 for coating. The deposition wall 130 is disposed between partitions 120, and each deposition wall 130 is perpendicular to a first axis. In some embodiments, each partition 120 is used to separate the deposition wall 130 from the non-deposition wall 130 to isolate excess gas and ensure normal operation. The deposition wall 130 includes various shapes and structures. In some embodiments, the chamber mechanism 100 may be rectangular. In other embodiments, the chamber mechanism 100 may be circular. In other embodiments, the chamber mechanism 100 may be polygonal, etc., depending on the actual situation. This application embodiment uses a fan-shaped chamber mechanism 100 as an example. The deposition wall 130 includes various wall structures. It should be noted that the deposition wall 130 may be a straight surface or a curved surface. In some embodiments, the deposition wall 130 includes multiple fixing devices for fixing the raw material 20. Furthermore, the number of fixing devices can be determined according to the actual situation. For example, the number of fixing devices can be two, three, four, etc.

[0064] The gas guiding mechanism 200 includes a guiding part 210 configured to diffuse gas to the deposition wall surface 130 so that the raw material 20 on the deposition wall surface 130 is coated. The guiding part 210 guides the flow direction of the gas when the gas enters the chamber mechanism 100. In some embodiments, the guiding part 210 includes a first opening provided in a direction perpendicular to the first axis and a wind guiding plate provided at the first opening. The wind guiding plate is used to guide the flow direction of the gas when the gas enters the chamber mechanism 100. Further, the guiding part 210 includes a dispersion hole plate provided on the first opening for uniformly diffusing the gas to improve the uniformity of gas diffusion. Further, the number of wind guiding plates is multiple. The number of wind guiding plates can be determined according to the actual situation. Exemplarily, the number of wind guiding plates can be two, three, four, etc.

[0065] See Figure 2 and Figure 3 , the first direction X is the flow direction of the gas when it enters the working chamber 110, the second direction Y is the linear velocity direction of the working chamber 110 at the position of the guiding part 210, and the included angle between the first direction X and the second direction Y is angle A, and angle A satisfies: 0° < A < 90°. The angle of angle A can be determined according to actual needs. Exemplarily, the angle of angle A can be 10°, 20°, 30°, 40°, 50°, 60°, 70°, 80°, etc. It should be noted that since the chamber mechanism 100 rotates around the first axis and the gas has a flow direction relative to the ground when it enters the chamber mechanism 100, during the coating process, the motion vector of the gas relative to the chamber is the cross product of the vector of the gas motion and the vector of the opposite direction of the linear velocity motion of the chamber mechanism 百where the gas is located. In the prior art, see Figure 10, the included angle A satisfies: A = 90°, that is, the movement direction of the gas is perpendicular to the linear velocity direction of the working chamber device 40 at the position of the guiding device 30. When the gas enters the working chamber device 40, the included angle between the flow direction of the gas relative to the working chamber device 40 and the linear velocity direction of the working chamber device 40 at the position of the guiding device 30 is an obtuse angle, so that the range of the gas directly hitting the partition device 50 is large, and the area of the included angle between the partition device 50 and the deposition wall surface device 60 that the gas cannot cover is large, resulting in a decrease in the reaction rate, a decrease in the uniformity of the gas flow in the working chamber device 40, and a decrease in the uniformity of coating the raw material 20. In this embodiment, through the action of the guiding mechanism, the included angle A satisfies: 0° < A < 90°, that is, the included angle between the flow direction of the gas when it enters the working chamber 110 and the linear velocity direction of the working chamber 110 at the position of the guiding portion 210 is a smaller obtuse angle, so that in the working state, that is, when the chamber mechanism 100 rotates around the first axis, the included angle between the movement direction of the gas relative to the chamber mechanism 100 and the second direction Y is a larger acute angle, making the gas flow smoothly, so as to avoid the situation that the gas cannot cover the included angle between the partition 120 and the deposition wall surface 130, expand the coverage area of the gas, and reduce the direct hitting of the gas on the partition 120, so as to reduce the turbulence generated between the partition 120 and the deposition wall surface 130, so that the gas forms a flow layer between the deposition wall surfaces 130. In this embodiment, without increasing the production cost, the reaction rate is increased, the uniformity of the gas flow in the working chamber 110 is improved, and the coating uniformity is improved. Further, when the chamber mechanism 100 rotates around the first axis, the included angle between the movement direction of the gas relative to the chamber mechanism 100 and the second direction Y is 90°, making the gas flow smoothly, so as to avoid the situation that the gas cannot cover the included angle between the partition 120 and the deposition wall surface 130, expand the coverage area of the gas, and reduce the direct hitting of the gas on the partition 120, so as to reduce the turbulence generated between the partition 120 and the deposition wall surface 130, so that the gas forms a flow layer between the deposition wall surfaces 130, further improving the uniformity of the gas flow in the working chamber 110, and further increasing the reaction rate without increasing the production cost, thereby further improving the coating uniformity.

[0066] In some embodiments, the included angle A satisfies: 30° ≤ A ≤ 60°. The specific angle A can be determined according to the actual situation. For example, the included angle A can be set to 30°, 35°, 40°, 45°, 50°, 55°, 60°, etc. By further adjusting the range of the included angle A, the gas flow is made smoother, so as to avoid the gas failing to cover the included angle between the partition 120 and the deposition wall 130, thereby expanding the gas coverage area and reducing the direct gas impact on the partition 120, so as to reduce the turbulence generated between the partition 120 and the deposition wall 130, so that the gas forms a flow layer between the deposition wall 130, further improving the uniformity of the airflow in the working chamber 110, and further increasing the reaction rate without increasing production costs, thereby further improving the coating uniformity.

[0067] See Figure 2 The gas flow velocity is Va, and the linear velocity of the working chamber 110 at the gas inlet is Vb. The included angle A satisfies: cosA = Va / Vb, so that the angle between the gas's direction of motion relative to the chamber mechanism 100 and the second direction Y is 90°, ensuring smooth gas flow and improving the uniformity of the airflow in the working chamber 110. This further increases the reaction rate without increasing production costs, thereby further improving the coating uniformity. In some embodiments, the air guide plate includes two opposing guide surfaces. The gas abuts against the guide surfaces, which then guide the gas to enter the chamber mechanism 100 along the guide surfaces. Furthermore, the angle D between each guide surface and the linear velocity direction of the working chamber 110 at the gas inlet satisfies the same angle as the included angle A, such that the included angle A satisfies: cosA = Va / Vb.

[0068] The gas guiding mechanism 200 includes multiple guide portions 210. The specific number of guide portions 210 can be determined according to the actual situation. For example, the guide portions 210 can be two, three, four, etc., and each guide portion 210 is circumferentially distributed around a first axis. It should be noted that the guide portions 210 can be arranged at uniform intervals or non-uniform intervals. The chamber mechanism 100 includes multiple working chambers 110. The specific number of working chambers 110 can be determined according to the actual situation. For example, the working chambers 110 can be two, three, four, etc., and each working chamber 110 is circumferentially distributed around a first axis. It should be noted that the guide portions 210 can be arranged at uniform intervals or non-uniform intervals. In some embodiments, the number of guide portions 210 is the same as the number of working chambers 110, to adapt to simultaneous coating of multiple working chambers 110.

[0069] The gases include reactive gases and purge gases. The reactive gases are used to coat the raw material 20, and the purge gases are used to remove excess reactive gases. Each guide section 210 introduces both reactive and purge gases. The gases introduced between adjacent guide sections 210 are reactive and purge gases, respectively. That is, for the same working chamber 110, after each reactive gas coating process, a purge gas removal process is required to ensure smooth gas coating. In some embodiments, if multiple reactive gases are required for coating in the same chamber, a purge gas removal process is required after each reactive gas process to ensure that excess reactive gases do not interact with each other.

[0070] The chamber mechanism 100 includes an extraction port 140, the axial direction of which is collinear with the first axis. The extraction port 140 is used to extract gas to ensure that the gas flow direction within the chamber mechanism 100 is stable and to ensure the removal of excess reactive gas, thereby increasing the reaction rate, improving the uniformity of airflow in the working chamber 110, and improving the coating uniformity.

[0071] See Figure 3 The guide section 210 includes a plurality of guide holes 220, with a second axis being the axis of each guide hole 220. The second axis is parallel to the first direction X. The guide holes 220 are used to guide the flow direction of the gas when it enters the chamber mechanism 100. The number of guide holes 220 can be determined according to the actual situation. For example, the number of guide holes 220 can be two, three, four, etc. In some other embodiments, the angle between the axial direction of each guide hole 220 and the linear velocity direction of the working chamber 110 at the gas inlet satisfies cosA = Va / Vb, so that the angle A satisfies: cosA = Va / Vb.

[0072] A second aspect of this application also provides a deposition apparatus 10, see [link to previous document]. Figures 4 to 6 as well as Figure 8 , Figure 9 The deposition apparatus 10 introduces gas to coat the raw material 20. The deposition apparatus 10 includes a chamber mechanism 100 and a gas guiding mechanism 200. The external profile of the deposition apparatus 10 can have various structures. In some embodiments, the deposition apparatus 10 can be cuboid. In other embodiments, the deposition apparatus 10 can be cylindrical. In other embodiments, the deposition apparatus 10 can be polygonal, etc., depending on the specific circumstances. This application embodiment uses a cylindrical deposition apparatus 10 as an example.

[0073] The external profile of the chamber mechanism 100 can have various structures. In some embodiments, the chamber mechanism 100 can be a cuboid. In other embodiments, the chamber mechanism 100 can be a cylinder. In other embodiments, the chamber mechanism 100 can be a polygon, etc., depending on the actual situation. This application embodiment uses a cylindrical chamber mechanism 100 as an example. The chamber mechanism 100 is configured to rotate about a first axis, which is the axis of the cylindrical chamber mechanism 100. The chamber mechanism 100 includes a working chamber 110. In some embodiments, the chamber mechanism 100 can be a cuboid. In other embodiments, the chamber mechanism 100 can be a cylinder. In other embodiments, the chamber mechanism 100 can be a polygon, etc., depending on the actual situation. This application embodiment uses a chamber mechanism 100 including a sector-shaped cylinder as an example. Along a direction perpendicular to the first axis, the working chamber 110 is provided with two opposing partitions 120, the length direction of each partition 120 being perpendicular to the direction of the first axis. The working chamber 110 includes deposition walls 130 disposed between partitions 120, each deposition wall 130 being perpendicular to a first axis. Each deposition wall 130 includes a working area 131 for placing raw material 20 for coating. In some embodiments, each partition 120 separates the deposition walls 130 from the non-deposition walls 130 to isolate excess gas and ensure normal operation. The deposition walls 130 can have various shapes and structures. In some embodiments, the chamber mechanism 100 can be rectangular. In other embodiments, the chamber mechanism 100 can be circular. In other embodiments, the chamber mechanism 100 can be polygonal, etc., depending on the specific circumstances. This application embodiment uses a fan-shaped chamber mechanism 100 as an example. The deposition walls 130 can have various wall structures; it should be noted that the deposition walls 130 can be flat or curved. In some embodiments, the deposition walls 130 include multiple fixing devices for fixing the raw material 20. Furthermore, the number of fixing devices can be determined according to the actual situation. For example, the number of fixing devices can be two, three, four, etc.

[0074] The gas guiding mechanism 200 includes a guide section 210, which is configured to move the gas to the deposition wall 130 so that the raw material 20 in the deposition wall 130 is coated. The guide section 210 guides the flow direction of the gas when the gas enters the chamber mechanism 100.

[0075] See Figure 5 as well as Figure 6The first direction X is the flow direction of gas entering the working chamber 110, and the second direction Y is the tangent direction of the rotation direction of the working chamber 110. An angle B is formed between the first direction X and the second direction Y, satisfying: 0 degrees ≤ B ≤ 180 degrees. The angle B can be determined according to actual needs. For example, the angle B can be 0°, 10°, 20°, 30°, 40°, 50°, 60°, 70°, 80°, 90°, 100°, 110°, 120°, 130°, 140°, 150°, 160°, 170°, 180°, etc. The working area 131 has a first side 1311 and a second side 1312 arranged opposite each other. Along the second direction Y, the second side 1312 is located below the first side 1311. The direction of the second side 1312 is at an angle C with the second direction Y, satisfying: 0 degrees ≤ C ≤ 90 degrees. The angle C can be determined according to actual needs. For example, the angle C can be 0°, 10°, 20°, 30°, 40°, 50°, 60°, 70°, 80°, 90°, etc. This ensures that the angle between the gas flow direction relative to the working chamber 110 when entering the working chamber 110 and the direction of the second side 1312 is small, so that the working area 131 is completely covered by the gas flow direction, allowing the gas to flow smoothly. This minimizes the area of ​​the working area 131 that cannot be covered, and the working area 131 is not affected by the turbulence generated between the partition 120 and the deposition wall 130. This allows the gas to form a flow layer in the working area 131, increasing the reaction rate and improving the uniformity of the gas flow in the working area 131 without increasing production costs, thus improving the coating uniformity.

[0076] In some embodiments, the included angle B satisfies: 60 degrees ≤ B ≤ 120 degrees. The specific angle of included angle B can be determined according to the actual situation. For example, included angle A can be set to 60°, 70°, 80°, 90°, 100°, 110°, 120°, etc. The included angle C satisfies: 30 degrees ≤ C ≤ 60 degrees. The specific angle of included angle C can be determined according to the actual situation. For example, included angle C can be set to 30°, 35°, 40°, 45°, 50°, 55°, 60°, etc. By further adjusting the range of included angles B and C, the gas flow is made smoother, the uniformity of the airflow in the working chamber 110 is further improved, and the reaction rate is further increased without increasing production costs, thereby further improving the coating uniformity.

[0077] See Figure 5 as well as Figure 6The gas flow velocity is Va, and the linear velocity of the working chamber 110 is Vb. When the included angle B satisfies B = 90 degrees, the included angle C satisfies tanC = Vb / Va. This ensures that the gas flow direction relative to the working chamber 110 upon entering the working chamber 110 is parallel to the direction of the second side 1312, facilitating smooth gas flow, improving the uniformity of the gas flow in the working chamber 110, and further increasing the reaction rate without increasing production costs, thereby further improving the coating uniformity.

[0078] It should be noted that other contents of the reaction gas and purging gas disclosed in this application can be found in the prior art, and will not be repeated here.

[0079] Furthermore, it should be noted that while preferred embodiments of this application are provided in the specification and accompanying drawings, this application can be implemented in many different forms and is not limited to the embodiments described herein. These embodiments are not intended to impose additional limitations on the content of this application; their purpose is to provide a more thorough and comprehensive understanding of the disclosure of this application. Moreover, the above-described technical features can be combined with each other to form various embodiments not listed above, all of which are considered to fall within the scope of this specification. Furthermore, those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A deposition apparatus, characterized in that, The deposition device introduces a gas for coating a raw material, and the deposition device includes: a chamber mechanism configured to rotate about a first axis. The chamber mechanism includes a working chamber. Along a direction perpendicular to the first axis, the working chamber is provided with two partition plates arranged oppositely. The working chamber includes a deposition wall surface provided between the partition plates, and each deposition wall surface is perpendicular to the first axis; a gas guiding mechanism. The gas guiding mechanism includes a guiding portion configured to move the gas to the deposition wall surface. The guiding portion includes a first opening provided along a direction perpendicular to the first axis and a wind guiding plate provided at the first opening. The wind guiding plate is used to guide the flow direction of the gas when the gas enters the chamber mechanism; wherein a first direction is the flow direction of the gas when it enters the working chamber, a second direction is the linear velocity direction of the working chamber at the position of the guiding portion, and an included angle A is formed between the first direction and the second direction. The included angle A satisfies: 0° < A < 90°. When the chamber mechanism rotates about the first axis, the included angle between the movement direction of the gas relative to the chamber mechanism and the second direction is 90°, so that the gas flows smoothly, avoiding that the gas cannot cover the included angle between the partition plate and the deposition wall surface, expanding the coverage area of the gas, and reducing the direct impact of the gas on the partition plate, thereby reducing the turbulence generated between the partition plate and the deposition wall surface, so that a flow layer is formed between the deposition wall surfaces of the gas; 2. The deposition device according to claim 1, wherein the included angle A satisfies: 30° ≤ A ≤ 60°; 3. The deposition device according to claim 1, wherein The gas flow velocity is Va, the linear velocity of the working chamber at the gas inlet is Vb, and the included angle A satisfies: .

4. The deposition device according to claim 1, wherein the gas guiding mechanism includes a plurality of the guiding portions, and each of the guiding portions is circumferentially distributed around the first axis; the chamber mechanism includes a plurality of the working chambers, and each of the working chambers is circumferentially distributed around the first axis; 5. The deposition device according to claim 4, wherein the gas includes a reaction gas and a purge gas. The reaction gas is used for coating the raw material, and the purge gas is used for removing the excess reaction gas. Each of the guiding portions respectively introduces the reaction gas and the purge gas; 6. The deposition device according to claim 1, wherein the chamber mechanism includes an air extraction hole, and the axis direction of the air extraction hole is collinear with the first axis. The air extraction hole is used for extracting the gas; 7. The deposition device according to claim 1, wherein the guiding portion includes a plurality of guiding holes, a second axis is the axis of each guiding hole, and the second axis is parallel to the first direction.

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