3D printing forming SiC semiconductor ignition material and preparation method thereof

Abstract

The application relates to the technical field of space electric propulsion ignition material preparation, in particular to a 3D printing forming SiC semiconductor ignition material and a preparation method thereof. The method comprises the following steps: preparing a composite photosensitive resin slurry; preparing an SiC semiconductor composite powder; preparing an SiC-photosensitive resin composite slurry and adding a coupling agent solution and SA hard acid to obtain a composite silicon carbide photosensitive resin mixed slurry; using a 3D printing technology to print the composite silicon carbide photosensitive resin mixed slurry into an SiC semiconductor printing green body, and carrying out debinding and sintering to obtain the preparation of the SiC semiconductor ignition material. The method adopts a stereolithography forming process to replace a traditional process, can realize automatic production, does not need a complicated processing mold, has a short production cycle, low processing cost, and the method is simple, processing is more convenient, precision is high, and the production efficiency of the SiC ignition material is greatly improved. The method solves the problems of high production cost, long cycle and difficulty in automation in the preparation process of the SiC semiconductor ceramic part.

Description

TECHNICAL FIELD

[0001] The application relates to a preparation technology of aerospace electric propulsion ignition material, in particular to a 3D printing forming SiC semiconductor ignition material and a preparation method thereof. BACKGROUND

[0002] Microsatellites and other small satellites have grown almost exponentially in the past two decades. Compared with traditional satellites, microsatellites have the advantages of small size, light weight, low cost, short development cycle, etc., and can be more flexibly applied in meteorology, earth observation, communication, navigation and deep space exploration, etc. At present, space propulsion technology mainly develops towards full electric propulsion technology. Full electric propulsion technology refers to driving the thruster by electricity, instead of relying on chemical reactions like chemical thrusters. Micro-cathode arc thruster is a new type of electric propulsion system, which uses ions or plasma to generate thrust, has the advantages of high efficiency, environmental protection, controllability, etc., and can meet the needs of microsatellites.

[0003] The traditional micro-cathode arc thruster ignition material is a micron-sized metal coating deposited on a ceramic substrate. With repeated ignition of the thruster, part of the metal vapor generated by the ablation of the cathode will deposit on the surface of the ceramic layer, and at the same time, it will also be continuously consumed during the triggering of the discharge. The consumption is often greater than the deposition rate, and this competitive relationship between metal deposition and consumption will lead to unstable state of the triggering thin layer. Excessive consumption of the metal thin layer will cause the micro-cathode arc thruster to be unable to trigger reliably. In addition, long-term continuous work will also cause the thin layer to overheat, and even the ceramic base layer to crack, etc. The SiC semiconductor ignition material used in the plasma thruster successfully ignited in orbit does not change the characteristics of the body after the surface material is consumed, and the service life is greatly improved. Its core is to use advanced heat shock resistant silicon carbide material to replace the original triggering mode by using semiconductor surface flashover, thereby realizing long service life and reliable work of the micro-cathode arc thruster, and having the advantages of excellent heat shock resistance, high strength, long service life, good stability, etc.

[0004] However, the traditional manufacturing method of SiC semiconductor ceramics is composed of four steps of raw materials, green body forming, sintering and machining. The forming process is the most important in the whole ceramic preparation production, and the traditional forming process includes slip casting, isostatic pressing, injection molding, hot-pressing injection molding and the like. These processes often cannot accurately control the forming shape and size, and due to the obvious inherent brittleness and hardness of SiC semiconductor ceramics, there are inevitable machining defects and damages in the sintering and machining methods, which will greatly reduce the service performance and life. And in the subsequent processing, because the hardness of the ceramic is high and the brittleness is large, the requirement for the grinding head is high, and expensive diamond or super alloy cutting tools are usually required for processing. Moreover, such traditional ceramic forming process method generally needs a large number of processing molds, and for the various specific shape requirements of silicon carbide devices, various complex molds need to be made first, which greatly increases the production cycle and cost. In addition, SiC semiconductor ceramic components with extremely complex shapes may contain inner holes or inner surfaces, which are very difficult to achieve. For some unavoidable inner corners, the filling capacity of the slurry is poor and it cannot be completely filled. For example, slip casting of SiC semiconductor ceramic parts usually requires a mold, which results in relatively low forming precision and material density / strength. Therefore, the traditional ceramic forming and sintering machining method cannot meet the manufacturing requirements of three-dimensional complex shape SiC semiconductor ceramic parts. SUMMARY

[0005] In view of the problems of high production cost, long cycle and difficulty in automation in the preparation process of SiC semiconductor ceramic parts in the prior art, the application provides a 3D printing forming SiC semiconductor ignition material and a preparation method thereof.

[0006] To achieve the above-mentioned purpose, the application adopts the following technical solutions:

[0007] The application provides a preparation method of a 3D printing forming SiC semiconductor ignition material, including the following steps:

[0008] Preparation of composite photosensitive resin slurry;

[0009] Preparation of SiC semiconductor composite powder;

[0010] Mixing the composite photosensitive resin slurry and the SiC semiconductor composite powder to prepare SiC-photosensitive resin composite slurry;

[0011] Adding a coupling agent solution and SA hard acid to the SiC-photosensitive resin composite slurry and mixing uniformly to obtain a composite silicon carbide photosensitive resin mixed slurry;

[0012] Using 3D printing technology to print the composite silicon carbide photosensitive resin mixed slurry into a SiC semiconductor printing green body;

[0013] debinding the SiC semiconductor printing green body;

[0014] sintering the debound SiC semiconductor printing green body in a special powder to obtain the SiC semiconductor ignition material.

[0015] Further, the composite photosensitive resin slurry comprises the following raw material components by mass percentage:

[0016] 1 part of mixed resin, 0.01-0.02 parts of TPO photoinitiator, 0.01-0.02 parts of 819 photoinitiator, and 0.02-0.04 parts of dispersing agent;

[0017] The mixed resin comprises 30-50% acryloyl morpholine, 15-25% ethoxylated pentaerythritol tetraacrylate, 10-20% dipentaerythritol-5,6 acrylate, and 20-40% 9,9-di-[(4-hydroxyethoxy) phenyl] fluorene by mass percentage.

[0018] Further, the SiC semiconductor composite powder comprises the following raw material components by mass fraction:

[0019] 40-70% SiC powder, 10-30% Al2O3 powder, 10-20% ZrO2 powder, 4-6% Re2Si2O7, 2-5% SiO2, and 1-3% SrO, wherein Re is a rare earth element.

[0020] Further, when the SiC-photosensitive resin composite slurry is prepared, the volume ratio of the composite photosensitive resin slurry to the SiC semiconductor composite powder is 57:43.

[0021] Preferably, in the composite silicon carbide photosensitive resin mixed slurry, the coupling agent is a KH-560 coupling agent solution, the concentration of the coupling agent solution is 10wt%, and the amount of the coupling agent solution added is 3wt% of the SiC semiconductor composite powder; the amount of SA hard acid added is 1wt% of the SiC semiconductor composite powder.

[0022] Further, the method for printing the composite silicon carbide photosensitive resin mixed slurry into a SiC semiconductor printing green body by using 3D printing technology is as follows:

[0023] According to the requirements, a printing model is established;

[0024] The established printing model is differentiated into a plurality of two-dimensional cross-section slices;

[0025] Project the graphics of the two-dimensional cross-section slices on the surface of the composite silicon carbide photosensitive resin mixed slurry in sequence, solidify the pattern projection area of the surface of the composite silicon carbide photosensitive resin mixed slurry, and scrape it flat until the graphics of all the two-dimensional cross-section slices are projected on the surface of the composite silicon carbide photosensitive resin mixed slurry, the solidification of the pattern projection area of the surface of the composite silicon carbide photosensitive resin mixed slurry is completed, and the SiC semiconductor printing green body is obtained.

[0026] Preferably, the thickness of the two-dimensional cross-section slices is 70-90 microns, and the solidification thickness of the solidification of the pattern projection area of the surface of the composite silicon carbide photosensitive resin mixed slurry is 1 / 3-1 / 2 of the thickness of the two-dimensional cross-section slices.

[0027] Further, the temperature for debinding the SiC semiconductor printing green body is 600-800 DEG C, the holding time is 2-3 hours, and the heating rate is 15-20 DEG C / h.

[0028] Further, the SiC semiconductor printing green body after debinding is buried in the special powder for sintering, and the method for obtaining the SiC semiconductor ignition material is as follows:

[0029] The SiC semiconductor printing green body after debinding is buried in the mixed powder of the SiC semiconductor composite powder and the BN powder with a volume ratio of 2:1, sintered under vacuum condition, the sintering temperature is 1650-1850 DEG C, the holding time is 1-3 hours, and the SiC semiconductor ignition material is obtained.

[0030] The application also provides a SiC semiconductor ignition material prepared by the above preparation method.

[0031] Compared with the prior art, the application has the following beneficial effects:

[0032] The application provides a preparation method of a 3D printing formed SiC semiconductor ignition material.

[0033] By adjusting the component content of the mixed resin, a photosensitive resin slurry with excellent rheological properties and light curing forming properties is obtained; by adding appropriate amounts of a photoinitiator and a dispersant, the slurry has good dispersion stability and effectively prevents powder sedimentation.

[0034] The SiC semiconductor composite powder comprises SiC powder, Al2O3 powder, ZrO2 powder, SiO2, SrO and Re2Si2O7, wherein Re is La, Yb, Lu or Y rare earth element; the addition of the above components can ensure that the material has good temperature resistance, ion erosion resistance, mechanical properties and reliability.

[0035] The application also provides a SiC semiconductor ignition material prepared by the preparation method. -1 The material has good performance indexes, and meets the manufacturing requirements of SiC semiconductor ceramic components. BRIEF DESCRIPTION OF DRAWINGS

[0036] Figure 1 It is a preparation method flowchart of the 3D printing forming SiC semiconductor ignition material.

[0037] Figure 2 It is a physical picture of the formed electric nozzle material prepared by the preparation method of the 3D printing forming SiC semiconductor ignition material.

[0038] Figure 3 It is an SEM microstructure picture of the formed electric nozzle material prepared by the preparation method of the 3D printing forming SiC semiconductor ignition material.

[0039] Figure 4 It is an XRD spectrum of the formed electric nozzle material prepared by the preparation method of the 3D printing forming SiC semiconductor ignition material. DETAILED DESCRIPTION

[0040] In order to make the purpose, technical scheme and advantages of the embodiments of the application clearer, the technical scheme in the embodiments of the application will be described clearly and completely below with reference to the drawings in the embodiments of the application. Obviously, the described embodiments are part of the embodiments of the application, rather than all the embodiments of the application. The components of the embodiments of the application described and shown in the drawings can be arranged and designed in various different configurations.

[0041] Therefore, the following detailed description of the embodiments of the application provided in the drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments in the application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of protection of the application.

[0042] It should be noted that similar reference numbers and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0043] In the description of the embodiments of the application, it should be noted that if the terms "upper", "lower", "horizontal", "inner" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the product of the application is usually placed, only for the convenience of describing the application and simplifying the description, and it is not intended to indicate or imply that the device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the application. In addition, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0044] In addition, if the term "horizontal" appears, it does not mean that the component must be absolutely horizontal, but can be slightly inclined. For example, "horizontal" only means that its direction is relatively more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0045] In the description of the embodiments of the application, it should also be noted that unless otherwise explicitly specified and limited, if the terms "set", "mount", "connected", "connected" appear, they should be understood in a broad sense, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the communication between the two elements inside. For those of ordinary skill in the art, the specific meaning of the above terms in the application can be understood according to the specific circumstances.

[0046] The application will be further described in detail below in conjunction with specific embodiments, which are an explanation of the application rather than a limitation.

[0047] The application discloses a preparation method of a 3D printing forming SiC semiconductor ignition material, referring to Figure 1 , comprising the following steps:

[0048] S1: preparing a composite photosensitive resin slurry, specifically:

[0049] 30% to 50% of acryloylmorpholine (ACMO), 15% to 25% of ethoxylated pentaerythritol tetraacrylate (PPTTA), 10% to 20% of dipentaerythritol-5,6 acrylate (DPHA) and 20% to 40% of 9,9-di-[(4-hydroxyethoxy)phenyl]fluorene (high-bending resin) are mixed in a mass ratio to form a mixed resin;

[0050] 1 part of the mixed resin is taken, 0.01 to 0.02 parts of TPO photoinitiator, 0.01 to 0.02 parts of 819 photoinitiator and 0.02 to 0.04 parts of dispersant are added, stirred and ultrasonically treated, mixed and dissolved to obtain a composite photosensitive resin slurry; the TPO photoinitiator is 2,4,6(trimethylbenzoyl) diphenyl phosphine oxide, the 819 photoinitiator is phenyl bis(2,4,6-trimethylbenzoyl) phosphine oxide, and the dispersant is titanium white dispersant RD-9905; the stirring is mechanical stirring, and the ultrasonic treatment time is 2 to 4 h.

[0051] S2: preparing a SiC semiconductor composite powder, specifically:

[0052] 40% to 70% of SiC powder, 10% to 30% of Al2O3 powder, 10% to 20% of ZrO2 powder, 4% to 6% of Re2Si2O7, 2% to 5% of SiO2 and 1% to 3% of SrO are mixed in a mass ratio to obtain a SiC semiconductor composite powder, wherein Re is a rare earth element, preferably La, Yb, Lu or Y rare earth element, but not limited to the four kinds of rare earth silicates; the mixing method is wet ball milling, the milling balls are agate balls, the ball milling medium is anhydrous ethanol, the mass ratio of balls, materials and medium is 6:3:4, and the ball milling time is 4 h.

[0053] S3: mixing the composite photosensitive resin slurry with the SiC semiconductor composite powder to prepare a SiC-photosensitive resin composite slurry, specifically:

[0054] The SiC semiconductor composite powder and the composite photosensitive resin slurry are mixed in a volume ratio of 43:57 to obtain a SiC-photosensitive resin composite slurry.

[0055] S4: adding a coupling agent solution and SA hard acid to the SiC-photosensitive resin composite slurry and mixing uniformly to obtain a composite silicon carbide photosensitive resin mixed slurry, specifically:

[0056] The SiC-photosensitive resin composite slurry is placed in a homogenizer for 2 h, a coupling agent solution and SA hard acid are added and mixed uniformly to obtain a composite silicon carbide photosensitive resin mixed slurry.

[0057] The coupling agent is a KH-560 coupling agent solution, which is a silane coupling agent aqueous solution with a molecular formula of C9H23 NO3Si, the concentration of the coupling agent solution is 10wt%, the amount of the coupling agent solution added is 3wt% of the SiC semiconductor composite powder; the SA hard acid is a long-chain saturated fatty acid, the chemical formula is C 18 H 36 O2, the amount of the SA hard acid added is 1wt% of the SiC semiconductor composite powder.

[0058] S5: using 3D printing technology to print the SiC semiconductor printing green body from the composite silicon carbide photosensitive resin mixed slurry, specifically:

[0059] According to the requirements, a printing model is established;

[0060] Based on the calculus idea, the established printing model is differentiated into a plurality of two-dimensional cross-section slices; the thickness of the two-dimensional cross-section slice is 70-90μm, so that the curing thickness of the surface pattern projection area of the composite silicon carbide photosensitive resin mixed slurry is 1 / 3-1 / 2 of the thickness of the two-dimensional cross-section slice;

[0061] Using DLP light curing technology, the pattern of the two-dimensional cross-section slice is projected on the surface of the composite silicon carbide photosensitive resin mixed slurry by the ultraviolet light projector, so that the surface pattern projection area of the composite silicon carbide photosensitive resin mixed slurry is cured, and the surface pattern projection area of the composite silicon carbide photosensitive resin mixed slurry is scraped flat until the pattern of all the two-dimensional cross-section slices is projected on the surface of the composite silicon carbide photosensitive resin mixed slurry, so that the surface pattern projection area of the composite silicon carbide photosensitive resin mixed slurry is cured, and the SiC semiconductor printing green body is obtained; wherein the light curing size deviation is ≤0.3%, the light exposure condition is a radiation intensity of 0.15-0.3W / cm 2 , and the light exposure time is 5-10s.

[0062] S6: defatting the SiC semiconductor printing green body, specifically: placing the SiC semiconductor printing green body in a condition with a temperature of 600-800℃, a holding time of 2-3h, and a heating rate of 15-20℃ / h.

[0063] S7: sintering the defatted SiC semiconductor printing green body in a special powder to obtain a SiC semiconductor ignition material, specifically:

[0064] Embedding the defatted SiC semiconductor printing green body in a mixed powder of SiC semiconductor composite powder and BN powder with a volume ratio of 2:1, sintering under the condition of vacuumizing to 2-4×10 -3 Pa, filling argon, argon atmosphere pressure of 0.2-0.6MPa, sintering at a heating rate of 5℃ / min to 1650-1850℃, holding time of 1-3h, to obtain the SiC semiconductor ignition material.

[0065] The present application provides 10 embodiments for the above preparation method, the preparation processes of embodiments 1 to 10 are as follows:

[0066] The acryloyl morpholine (ACMO), ethoxylated pentaerythritol tetraacrylate (PPTTA), dipentaerythritol-5,6 propenoic acid ester (DPHA) and 9,9-di-[(4-hydroxyethoxy) phenyl] fluorene (high-bending resin) are mixed in a mass ratio to form a mixed resin;

[0067] The TPO photoinitiator, 819 photoinitiator and dispersant are added to the mixed resin, mechanically stirred, ultrasonically treated for 3h, mixed and dissolved to obtain a composite photosensitive resin slurry.

[0068] The SiC powder, Al2O3 powder, ZrO2 powder, Re2Si2O7, SiO2 and SrO are uniformly mixed by wet ball milling, and sieved through a 200 mesh screen to obtain a SiC semiconductor composite powder;

[0069] The SiC semiconductor composite powder and the composite photosensitive resin slurry are uniformly mixed in a volume ratio of 43:57 to obtain a SiC-photosensitive resin composite slurry.

[0070] The coupling agent solution and SA hard acid are added to the SiC-photosensitive resin composite slurry and uniformly mixed to obtain a composite silicon carbide photosensitive resin mixed slurry, specifically:

[0071] The SiC-photosensitive resin composite slurry is placed in a homogenizer and mixed for 2h, and the coupling agent solution and SA hard acid are added and uniformly mixed to obtain a composite silicon carbide photosensitive resin mixed slurry.

[0072] The coupling agent is a KH-560 coupling agent solution, which is a silane coupling agent aqueous solution with a molecular formula of C9H 23 NO3Si, a concentration of 10wt%, and an addition amount of 3wt% of the SiC semiconductor composite powder; the SA hard acid is a long-chain saturated fatty acid with a chemical formula of C 18 H 36 O2, and an addition amount of 1wt% of the SiC semiconductor composite powder.

[0073] According to the requirements, a printing model is established;

[0074] Based on the established printing model, the differential is converted into a plurality of two-dimensional cross-section slices according to the idea of calculus; the thickness of the two-dimensional cross-section slice is 70μm, and the curing thickness of the surface pattern projection area of the composite silicon carbide photosensitive resin mixed slurry is 1 / 3 of the thickness of the two-dimensional cross-section slice;

[0075] The DLP light curing technology is used, and the two-dimensional cross-section slice patterns are projected on the surface of the composite silicon carbide photosensitive resin mixed slurry by an ultraviolet light projector in sequence. The surface pattern projection area of the composite silicon carbide photosensitive resin mixed slurry is cured, and is scraped flat until all the two-dimensional cross-section slice patterns are projected on the surface of the composite silicon carbide photosensitive resin mixed slurry, the surface pattern projection area of the composite silicon carbide photosensitive resin mixed slurry is cured, and a SiC semiconductor printing green body is obtained. In the method, the light curing size deviation is less than or equal to 0.3%.

[0076] The SiC semiconductor printing green body is subjected to debinding.

[0077] The debound SiC semiconductor printing green body is buried in a special powder for sintering to obtain a SiC semiconductor ignition material.

[0078] Referring to the following table, the content of each component in the composite photosensitive resin slurry of Examples 1 to 10 is shown by mass ratio. The content of the TPO photoinitiator, the 819 photoinitiator and the KOS110 dispersant is shown by percentage relative to the total mass of the mixed resin.

[0079]

[0080] Referring to the following table, the SiC semiconductor composite powder of Examples 1 to 10 includes the following raw material components by mass fraction:

[0081]

[0082] Referring to the following table, the reaction conditions of each step of Examples 1 to 10 are shown:

[0083]

[0084] Referring to the following table, the properties of the SiC semiconductor ignition material prepared in Examples 1 to 10 are shown:

[0085]

[0086] It can be seen that the SiC semiconductor ignition material prepared by the above method has more accurate size and shape, the open porosity is 0.1% to 3.3%, the closed porosity is 6.2% to 13.2%, the bending strength is 220 to 348 MPa, the bulk density is 3.025 to 3.171 g / cm -1 , the insulation resistance is 36 to 60 KΩ, the ignition voltage is 570 to 750 V, and each performance index is good, which meets the manufacturing requirements of SiC semiconductor ceramic parts. It is proved that the performance of the SiC ignition material prepared by 3D printing is normal, and the method has no obvious defects.

[0087] Referring to Figure 2The SiC semiconductor ignition material prepared in Example 5 is shown in a physical map, and it can be seen that the SiC semiconductor electrode of the complex structure formed by the process is free of cracks, inclusions and has a good overall macroscopic appearance.

[0088] Referring to Figure 3 The SEM microstructure of the SiC semiconductor ignition material prepared in Example 5 is shown in a photo, and it can be seen that the material contains 8% to 12% closed pores, which can effectively improve the thermal shock resistance of the SiC semiconductor ignition material. The black and gray irregular particles are SiC, the bright white particles are ZrO2, the gray white particles are Al2O3 and the remaining sintering aids, which can effectively bind the SiC grains together to form a dense sintered body.

[0089] Referring to Figure 4 The XRD pattern of the SiC semiconductor ignition material prepared in Example 5 is shown, and it can be seen that the main phases of the SiC semiconductor ignition material prepared by the method of the application are 6H-SiC, alpha-Al2O3 and ZrO2, and there are no other impurity peaks.

[0090] In summary, the application provides a 3D printing formed SiC semiconductor ignition material and a preparation method thereof. The method uses SiC, Al2O3, ZrO2, Re2Si2O7, SiO2 and SrO as raw materials, uniformly mixes ACMO, PPTTA, DPHA and high-fold resin with a certain amount of TPO photoinitiator, 819 photoinitiator and KOS110 dispersant in a certain proportion to obtain a photosensitive resin slurry with excellent rheological properties and light curing forming properties, then adds KH-560 solution, SA stearic acid as a silane coupling agent and a dispersant to make the slurry have good dispersion stability, effectively prevent powder settlement, and use DLP light curing forming technology to prepare a SiC ignition material with excellent performance, which can solve the problems of low precision of complex structure parts, the need for secondary processing and the like, greatly shorten the processing cycle of ceramic components and reduce costs. The SiC semiconductor ignition material formed and prepared by the method has normal performance and mature process. The complex structure SiC semiconductor ceramic can be accurately formed, and industrial automation is expected to be realized to improve production efficiency.

[0091] The above only describes the preferred embodiments of the application and does not limit the technical solutions of the application in any way. Those skilled in the art should understand that the technical solutions can be modified and replaced in several simple ways without departing from the spirit and principles of the application, and these modifications and replacements also fall within the protection scope of the claims.

Claims

1. A method for preparing SiC semiconductor ignition material by 3D printing, characterized in that, Includes the following steps: A composite photosensitive resin slurry is prepared; the composite photosensitive resin slurry comprises the following raw material components by mass percentage: 1 part mixed resin, 0.01 to 0.02 parts TPO photoinitiator, 0.01 to 0.02 parts 819 photoinitiator and 0.02 to 0.04 parts dispersant; The mixed resin comprises, by weight percentage, 30%–50% acryloylmorpholine, 15%–25% pentaerythritol tetraacrylate ethoxylate, 10%–20% dipentaerythritol-5,6 acrylate and 20%–40% 9,9-di-[(4-hydroxyethoxy)phenyl]fluorene; Preparation of SiC semiconductor composite powder; the SiC semiconductor composite powder comprises the following raw material components by mass fraction: The mixture contains 40%–70% SiC powder, 10%–30% Al2O3 powder, 10%–20% ZrO2 powder, 4%–6% Re2Si2O7, 2%–5% SiO2 and 1%–3% SrO, where Re is a rare earth element. A SiC-photosensitive resin composite slurry was prepared by mixing a composite photosensitive resin slurry with SiC semiconductor composite powder; wherein the volume ratio of the composite photosensitive resin slurry to the SiC semiconductor composite powder was 57:

43. Add coupling agent solution and SA hard acid to SiC-photosensitive resin composite slurry, mix evenly to obtain composite silicon carbide photosensitive resin mixed slurry; Using 3D printing technology, a composite silicon carbide photosensitive resin mixture is printed into a SiC semiconductor green blank. Degrease the SiC semiconductor printing preform; The degreased SiC semiconductor printing preform is embedded in a special powder and sintered to obtain SiC semiconductor ignition material.

2. The method for preparing 3D-printed SiC semiconductor ignition material according to claim 1, characterized in that, In the composite silicon carbide photosensitive resin mixture slurry, the coupling agent is a KH-560 coupling agent solution with a concentration of 10 wt%, and the amount of the coupling agent solution added is 3 wt% of the SiC semiconductor composite powder; the amount of SA hard acid added is 1 wt% of the SiC semiconductor composite powder.

3. The method for preparing 3D-printed SiC semiconductor ignition material according to claim 1, characterized in that, The method for printing SiC semiconductor green blanks by mixing composite silicon carbide photosensitive resin with 3D printing technology is as follows: Create a printing model based on the requirements; The established printing model is differentiated and transformed into several two-dimensional cross-sectional slices; The two-dimensional cross-sectional slices are sequentially projected onto the surface of the composite silicon carbide photosensitive resin mixture slurry, and the projected areas on the surface of the composite silicon carbide photosensitive resin mixture slurry are cured and smoothed, until all the two-dimensional cross-sectional slices are projected onto the surface of the composite silicon carbide photosensitive resin mixture slurry, and the projected areas on the surface of the composite silicon carbide photosensitive resin mixture slurry are cured, thus obtaining the SiC semiconductor printing green blank.

4. The method for preparing 3D-printed SiC semiconductor ignition material according to claim 3, characterized in that, The thickness of the two-dimensional cross-section slice is 70-90 μm, so that the curing thickness of the pattern projection area on the surface of the composite silicon carbide photosensitive resin mixture is 1 / 3 to 1 / 2 of the thickness of the two-dimensional cross-section slice.

5. The method for preparing 3D-printed SiC semiconductor ignition material according to claim 1, characterized in that, The degreasing temperature for the SiC semiconductor printing preform is 600℃~800℃, the holding time is 2~3h, and the heating rate is 15℃ / h~20℃ / h.

6. The method for preparing 3D-printed SiC semiconductor ignition material according to claim 1, characterized in that, The method for obtaining SiC semiconductor ignition material by embedding the degreased SiC semiconductor green preform in a special powder and sintering it is as follows: The degreased SiC semiconductor printing preform was embedded in a mixture of SiC semiconductor composite powder and BN powder in a volume ratio of 2:1, and sintered under vacuum at a temperature of 1650℃~1850℃ for 1~3h to obtain SiC semiconductor ignition material.

7. A SiC semiconductor ignition material, characterized in that, It is prepared using the preparation method according to any one of claims 1-6.

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