Method for selecting wafer focusing area and operation interface system

Abstract

The application provides a wafer focusing area selection method and an operation interface system, which comprises the following steps: providing a wafer layout, wherein the wafer layout comprises a pattern definition area and a non-pattern definition area; setting a plurality of exposure areas according to the pattern definition area and the non-pattern definition area; simulating and detecting exposure focusing information of the pattern definition area to obtain an area without exposure focusing information in the pattern definition area as a first focusing area; obtaining an exposure area corresponding to the first focusing area; selecting at least part of the non-pattern definition area located in the exposure area corresponding to the first focusing area and setting the at least part of the non-pattern definition area as a second focusing area; merging the pattern definition area and the second focusing area to generate a third focusing area; deducting the second focusing area in the non-pattern definition area to generate a fourth focusing area; and outputting the third focusing area and the fourth focusing area to a wafer. The third focusing area and the fourth focusing area are set by selection, so that the edge defocus of the wafer during exposure is avoided.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a method for selecting a wafer focusing region and an operating interface system. Background Technology

[0002] After being coated with photoresist and baked, the wafer is transferred to the lithography machine and placed on the wafer stage. Exposure is then performed according to a specified exposure program to transfer the pattern from the photomask to the wafer. To accurately transfer the pattern onto the wafer, the exposure focus information (including horizontal information) on the wafer surface needs to be measured to determine the optimal exposure focal length. However, due to limitations in chip size, the arrangement of exposure areas on the wafer, and the size of the lithography machine, it is difficult for the lithography machine to detect and control the exposure focus information of the wafer edge areas. The wafer edge areas are generally uneven and have a certain tilt value. When setting the exposure areas of the wafer, at least one exposure area includes part of the wafer edge area. When the lithography machine focuses, if it cannot obtain the exposure focus information of the wafer edge areas or obtains incorrect exposure focus information, the exposure will result in defocusing at the wafer edges and pattern distortion at the wafer edges, affecting the electrical performance and yield of the final lithographic product. Summary of the Invention

[0003] The purpose of this invention is to provide a method and operating interface system for selecting a wafer focusing area, thereby avoiding wafer edge defocusing during exposure by selecting and setting a third and fourth focusing area.

[0004] To achieve the above objectives, the present invention provides a method for selecting a wafer focusing region, comprising:

[0005] A wafer layout is provided, the wafer layout including a pattern definition area and a non-pattern definition area, the pattern definition area and the non-pattern definition area being disposed on the wafer and the non-pattern definition area surrounding the pattern definition area;

[0006] Multiple exposure areas are set according to the graphic definition area and the non-graphic definition area, wherein at least one of the exposure areas includes a portion of the graphic definition area and a portion of the non-graphic definition area;

[0007] Simulate the detection of exposure focus information in the graphic definition area, and obtain the area in the graphic definition area that does not have exposure focus information as the first focus area;

[0008] Obtain the exposure area corresponding to the first focusing area;

[0009] Select at least a portion of the non-graphically defined area located within the exposure area corresponding to the first focus area and set it as the second focus area;

[0010] The graphic definition area and the second focus area are merged to generate a third focus area;

[0011] Subtracting the second focus region within the non-graphically defined area to generate a fourth focus region; and,

[0012] The third and fourth focusing regions are output onto the wafer.

[0013] Optionally, the graphic definition area is circular, the non-graphic definition area is annular, and the graphic definition area and the non-graphic definition area are connected.

[0014] Optionally, the width of the non-graphic definition area is 1mm to 3mm.

[0015] Optionally, selecting at least a portion of the non-graphically defined area within the exposure area corresponding to the first focus area and setting it as the second focus area includes:

[0016] Select all non-graphically defined areas within the exposure area corresponding to the first focus area and set them as the second focus area.

[0017] Optionally, the width of the second focused area is the same as the width of the non-graphical definition area.

[0018] Optionally, selecting at least a portion of the non-graphically defined area within the exposure area corresponding to the first focus area and setting it as the second focus area includes:

[0019] Along the radial direction of the non-graphic definition area outward from the graphic definition area, a portion of the non-graphic definition area within the exposure area corresponding to the first focus area is selected and set as the second focus area, wherein the width of the second focus area is smaller than the width of the non-graphic definition area.

[0020] Optionally, the second focus area is adjacent to the graphic definition area.

[0021] Optionally, the third focusing region and the fourth focusing region each have an irregular boundary.

[0022] The present invention also provides a method for selecting a wafer focusing region, comprising:

[0023] A wafer layout is provided, the wafer layout including a pattern definition area and a non-pattern definition area, the pattern definition area and the non-pattern definition area being disposed on the wafer and the non-pattern definition area surrounding the pattern definition area;

[0024] Multiple exposure areas are set according to the graphic definition area and the non-graphic definition area, wherein at least one of the exposure areas includes a portion of the graphic definition area and a portion of the non-graphic definition area;

[0025] Simulate and detect the exposure and focus information of the wafer layout;

[0026] Filter the exposure and focus information of the non-graphically defined area;

[0027] Obtain the exposure area in the graphic definition area that does not have exposure focus information;

[0028] At least a portion of the non-graphically defined areas located within the exposure area that does not have exposure focus information are retained.

[0029] Optionally, retaining at least a portion of the filtered non-graphical defined areas located within the exposure area that does not have exposure focus information in the graphic definition area includes:

[0030] All non-graphic definition areas that are filtered out and located within the exposure area that does not have exposure focus information within the graphic definition area are retained.

[0031] Optionally, retaining at least a portion of the filtered non-graphical defined areas located within the exposure area that does not have exposure focus information in the graphic definition area includes:

[0032] The filtered portion of the non-graphically defined area located within the exposure area that does not have exposure focus information in the graphic definition area is retained, and the areas of the retained non-graphically defined areas located within different exposure areas that do not have exposure focus information in the graphic definition area are the same or different.

[0033] The present invention also provides an operation interface system for selecting a wafer focus area, comprising:

[0034] A database storage system stores wafer layouts and exposure information of the wafer layouts;

[0035] An operation interface related to wafer exposure, wherein the operation interface communicates directly or indirectly with the database storage system;

[0036] Specifically, the wafer layout and its exposure information are obtained through the operation interface, and the exposure information of the wafer layout is modified according to the wafer focus area selection method described above.

[0037] Optionally, the user interface includes options for selecting different exposure areas.

[0038] The present invention also provides an operation interface system for selecting a wafer focus area, comprising:

[0039] A database storage system stores wafer layouts and exposure information of the wafer layouts;

[0040] An operation interface related to wafer exposure, wherein the operation interface communicates directly or indirectly with the database storage system;

[0041] Specifically, the wafer layout and its exposure information are obtained through the operation interface, and the exposure information of the wafer layout is modified according to the wafer focus area selection method described above.

[0042] Optionally, the user interface includes options for selecting different exposure areas.

[0043] In the wafer focus area selection method and operation interface system provided by the present invention, by simulating the detection of exposure focus information of the pattern definition area, the area in the pattern definition area that does not have exposure focus information is obtained as the first focus area. Then, the exposure area corresponding to the first focus area is obtained. At least a portion of the non-pattern definition area located in the exposure area corresponding to the first focus area is selected and set as the second focus area. Then, the pattern definition area and the second focus area are merged to generate the third focus area. The second focus area in the non-pattern definition area is deducted to generate the fourth focus area. By selecting and setting the third focus area and the fourth focus area, the pattern definition area is expanded and set as the third focus area. The third focus area is equivalent to a new pattern definition area. When the wafer is inspected, the exposure focus information of the entire third focus area can be detected. There will be no area without exposure focus information in the third focus area, thereby avoiding wafer edge defocusing during exposure. Attached Figure Description

[0044] Figure 1 This is a flowchart of a wafer focusing region selection method provided in Embodiment 1 of the present invention.

[0045] Figures 2-9 This is a schematic diagram of the wafer layout in the wafer focusing region selection method provided in Embodiment 1 of the present invention.

[0046] Figure 10 This is a flowchart of a wafer focusing region selection method provided in Embodiment 2 of the present invention.

[0047] The attached figures are labeled as follows:

[0048] 11 - Graphic definition area; 12 - Non-graphic definition area; 20 - Exposure area; 31 - First focus area; 32 - Second focus area; 41 - Third focus area; 42 - Fourth focus area. Detailed Implementation

[0049] To make the objectives, advantages, and features of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, and are only used to facilitate and clarify the explanation of the embodiments of this invention. Furthermore, the structures shown in the drawings are often part of the actual structures. In particular, different figures may emphasize different aspects and may sometimes use different scales.

[0050] As used in this invention, the singular forms “a,” “an,” and “the” include plural objects; the term “or” is generally used to mean “and / or”; the term “a number” is generally used to mean “at least one”; and the term “at least two” is generally used to mean “two or more”. Furthermore, the terms “first,” “second,” and “third” are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Those skilled in the art will understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0051] Example 1

[0052] Figure 1 This is a flowchart illustrating the wafer focusing region selection method provided in this embodiment. Please refer to... Figure 1 This embodiment provides a method for selecting a wafer focusing region, including:

[0053] Step S1: Provide a wafer layout, which includes a pattern definition area and a non-pattern definition area. The pattern definition area and the non-pattern definition area are set on the wafer, and the non-pattern definition area surrounds the pattern definition area.

[0054] Step S2: Set multiple exposure areas based on the graphic definition area and the non-graphic definition area, wherein at least one exposure area includes a portion of the graphic definition area and a portion of the non-graphic definition area;

[0055] Step S3: Simulate and detect the exposure focus information of the graphic definition area, and obtain the area in the graphic definition area that does not have exposure focus information as the first focus area;

[0056] Step S4: Obtain the exposure area corresponding to the first focusing area;

[0057] Step S5: Select at least a portion of the non-graphically defined area within the exposure area corresponding to the first focus area and set it as the second focus area;

[0058] Step S6: Merge the graphic definition area and the second focus area to produce a third focus area;

[0059] Step S7: Subtract the second focus area outside the graphic definition area to generate the fourth focus area;

[0060] Step S8: Output the third and fourth focusing regions onto the wafer.

[0061] Figures 2-9 This is a schematic diagram of the wafer layout in the wafer focusing region selection method provided in this embodiment. The following is in conjunction with... Figures 2-9 The method for selecting the wafer focusing region provided in this embodiment will be described in detail.

[0062] Please refer to Figure 2 Step S1: Provide a wafer layout, which includes a pattern definition area 11 and a non-pattern definition area 12. The pattern definition area 11 and the non-pattern definition area 12 are disposed on the wafer, with the non-pattern definition area 12 surrounding the pattern definition area 11. In this embodiment, the pattern definition area 11 is circular, and the non-pattern definition area 12 is annular, with the pattern definition area 11 and the non-pattern definition area 12 connected. The width of the non-pattern definition area 12 (the width is the radial dimension S of the non-pattern definition area 12) can be 1mm to 3mm, such as 1mm, 2mm, or 3mm, but is not limited to this. The pattern definition area 11 is the effective chip area, and several chips are subsequently formed within the pattern definition area 11. The non-pattern definition area 12 is the ineffective chip area, and generally, non-pattern definition areas 12 are reserved on the wafer.

[0063] Please refer to Figure 3 Step S2: To perform the subsequent exposure process, multiple exposure regions 20 are set according to the pattern definition area 11 and the non-pattern definition area 12. Each exposure region 20 has the same size and can be rectangular. The multiple exposure regions 20 cover the entire wafer layout. At least one exposure region 20 includes a portion of the pattern definition area 11 and a portion of the non-pattern definition area 12. The exposure regions 20 at the wafer edge will include a portion of the pattern definition area 11 and a portion of the non-pattern definition area 12, and the exposure regions 20 at the wafer center will include a portion of the pattern definition area 11.

[0064] Please continue to refer to this. Figure 3 Step S3: Simulate detection of the exposure focus information of the pattern definition area 11 to obtain the exposure focus information of the pattern definition area 11. Simulation detection involves inputting the wafer layout into simulation software. The simulation software performs simulation based on the size information of the pattern definition area 11, the non-pattern definition area 12, and the exposure area 20. The simulation software can be a virtual scanner. Simulation detection sequentially detects each exposure area 20 corresponding to the pattern definition area 11 to obtain the exposure focus information of the pattern definition area 11. However, some areas at the edges of the pattern definition area 11 (such as...) Figure 2The area (shown by the bold solid line) is located within an exposure region 20 and is relatively small, making it impossible to obtain its exposure focus information through simulation detection. Therefore, after simulation detection, a portion of the edge of the graphic definition area 11 lacks exposure focus information. Thus, the area within the graphic definition area 11 that lacks exposure focus information is designated as the first focus area 31 (e.g., as shown by the bold solid line). Figure 2 (As shown by the thick solid line in the middle).

[0065] Please refer to Figure 4 , Figure 4 for Figure 3 The enlarged view within the dashed frame shows that each exposure area (20) includes multiple chip units, such as... Figure 4 The diagram illustrates an exposure area 20 that includes multiple chip units (a small square in the diagram represents, for example, a chip unit, but is not limited to). The first focus area 31 contains multiple complete chip units. The first focus area 31 is part of the graphic definition area 11. In order to preserve the complete chip units in the first focus area 31, subsequent steps are required to obtain the exposure focus information of the first focus area 31 by selecting and setting a new focus area.

[0066] In online detection of the exposure focus information of the pattern definition area 11, for example, a lithography machine is used to sequentially scan the pattern definition area 11 within each exposure region 20 to obtain the exposure focus information of the pattern definition area 11. However, some areas at the edges of the pattern definition area 11 (such as...) Figure 2 (As shown by the bold solid line) Located in the exposure area 20 and with a small area, the exposure focus information of some areas at the edge of the pattern definition area 11 cannot be obtained. Therefore, after simulation detection, the area in the pattern definition area 11 without exposure focus information is identified as the first focus area 31, which does not require in-line detection. The exposure focus information includes horizontal information, which is used for leveling. The horizontal sensing module on the lithography machine is used to obtain the horizontal information of the wafer through in-line detection. Generally, the horizontal sensing module projects a measurement spot onto the pattern definition area 11 within each exposure area 20 to measure the horizontal information of the pattern definition area 11. However, some areas at the edge of the pattern definition area 11 are small, and the horizontal sensing module cannot project a measurement spot onto the small edge area of ​​the pattern definition area 11. Therefore, the horizontal information of the small edge area of ​​the pattern definition area 11 cannot be measured, and thus the horizontal information of the first focus area 31 cannot be measured.

[0067] Please refer to Figure 5 Step S4: Based on the obtained first focused area 31, obtain the exposure area 20 corresponding to the first focused area 31 (e.g., ...). Figure 5 (As shown in the bold dashed rectangle).

[0068] Execution step S5: Please refer to Figure 6Selecting at least a portion of the non-graphically defined areas 12 within the exposure area 20 corresponding to the first focus area 31 and setting them as the second focus area 32 includes: selecting all the non-graphically defined areas 12 within the exposure area 20 corresponding to the first focus area 31 and setting them as the second focus area 32 (e.g., ...). Figure 6 As shown), the width of the second focusing region 32 (the width is the dimension of the second focusing region 32 along the radial direction of the non-graphic definition area 12) is the same as the width of the non-graphic definition area 12, and the second focusing region 32 is connected to the non-graphic definition area 12.

[0069] Please refer to Figure 7 Selecting at least a portion of the non-graphic definition area 12 within the exposure area 20 corresponding to the first focus area 31 and setting it as the second focus area 32 includes: selecting a portion of the non-graphic definition area 12 within the exposure area 20 corresponding to the first focus area 31 and setting it as the second focus area 32 along the radial direction of the non-graphic definition area 12 from the graphic definition area 11 outwards, wherein the width of the second focus area 32 (the width is the dimension of the second focus area 32 along the radial direction of the non-graphic definition area 12) is smaller than the width of the non-graphic definition area 12, the second focus area 32 is connected to the non-graphic definition area 12, and the width of the second focus area 32 can be adjusted according to the actual situation.

[0070] Execution step S6: Please continue to refer to Figure 6 and Figure 8 ,merge Figure 6 The graphic definition area 11 and the second focusing area 32 in the middle are used to generate Figure 8 The third focal area 41; please continue to refer to Figure 7 and Figure 9 ,merge Figure 7 The graphic definition area 11 and the second focusing area 32 in the middle are used to generate Figure 9 The third focusing region 41 in the middle; wherein the third focusing region 41 has an irregular boundary.

[0071] Execution step S7: Please continue to refer to Figure 6 and Figure 8 Subtract the second focus area 32 outside the graphic definition area 12 to generate the fourth focus area 42; please refer to [link / reference]. Figure 7 and Figure 9 The second focus region 32 within the non-graphic definition area 12 is subtracted to generate the fourth focus region 42; wherein the fourth focus region 42 has an irregular boundary (the boundary connecting with the third focus region 41 is irregular).

[0072] Execution step S8: Please continue to refer to Figure 8 and Figure 9 The third focusing region 41 and the fourth focusing region 42 are output to the wafer.

[0073] In this embodiment, by selecting and setting the third and fourth focus areas, it is equivalent to expanding the pattern definition area to the third focus area. The third focus area is equivalent to a new pattern definition area. When inspecting the wafer, since the area of ​​the third focus area in the exposure area of ​​the wafer edge is increased, the exposure focus information of the entire third focus area can be detected. There will be no area without exposure focus information in the third focus area, thereby avoiding defocusing of the wafer edge during exposure.

[0074] This embodiment also provides an operation interface system for selecting wafer focus areas, including: a database storage system and an operation interface related to wafer exposure, wherein the database storage system stores wafer layout and wafer layout exposure information, the operation interface communicates directly or indirectly with the database storage system, and the operation interface includes methods for selecting different exposure areas; the operation interface obtains wafer layout and wafer layout exposure information, and modifies the wafer layout exposure information according to the above-mentioned wafer focus area selection method, and selects and sets a third focus area and a fourth focus area through the operation interface system, thereby avoiding wafer edge defocusing during exposure.

[0075] Example 2

[0076] Figure 10 This is a flowchart illustrating the wafer focusing region selection method provided in this embodiment. Please refer to... Figure 10 This embodiment provides a method for selecting a wafer focusing region, including:

[0077] Step S1: Provide a wafer layout, which includes a pattern definition area and a non-pattern definition area. The pattern definition area and the non-pattern definition area are set on the wafer, and the non-pattern definition area surrounds the pattern definition area.

[0078] Step S2: Set multiple exposure areas based on the graphic definition area and the non-graphic definition area, wherein at least one exposure area includes a portion of the graphic definition area and a portion of the non-graphic definition area;

[0079] Step S3: Simulate and detect the exposure and focus information of the wafer layout;

[0080] Step S4: Filter exposure focus information outside the graphic definition area;

[0081] Step S5: Obtain the exposure area in the graphic definition area that does not have exposure focus information;

[0082] Step S6: Retain at least a portion of the filtered non-graphical definition areas located within the exposure area that does not have exposure focus information in the graphic definition area.

[0083] The method for selecting the wafer focusing region provided in this embodiment will be described in detail below.

[0084] Step S1: Provide a wafer layout, which includes a pattern definition area and a non-pattern definition area. The pattern definition area and the non-pattern definition area are set on the wafer, and the non-pattern definition area surrounds the pattern definition area. This step is the same as in Embodiment 1. For details, please refer to the description of Embodiment 1.

[0085] Step S2: Set multiple exposure areas according to the graphic definition area and the non-graphic definition area. At least one exposure area includes a part of the graphic definition area and a part of the non-graphic definition area. This step is the same as in Embodiment 1. For details, please refer to the description of Embodiment 1.

[0086] Step S3: Simulate and detect the exposure focus information of the wafer layout, including the exposure focus information of the pattern definition area and the non-pattern definition area, and obtain the exposure focus information of the pattern definition area and the non-pattern definition area. The simulation detection is to sequentially detect each exposure area corresponding to the pattern definition area and the non-pattern definition area to obtain the exposure focus information of the pattern definition area and the non-pattern definition area.

[0087] Step S4: Filter the exposure focus information of the non-graphical definition area from the obtained exposure focus information of the non-graphical definition area.

[0088] Step S5: Since a portion of the edge of the graphic definition area is located within an exposure area and is relatively small, it is impossible to simulate detection to obtain its exposure focus information. Therefore, after simulation detection, the portion of the edge of the graphic definition area does not have exposure focus information, thus obtaining the exposure area in the graphic definition area that does not have exposure focus information.

[0089] Step S6: Retain at least a portion of the filtered non-graphic definition areas within the exposure area that does not have exposure focus information in the graphic definition area. Then, the retained at least a portion of the non-graphic definition areas can be merged with the graphic definition area to set a single focus area. This focus area is equivalent to a new graphic definition area. When inspecting the wafer, due to the increased area of ​​the focus area within the exposure area at the wafer edge, the exposure focus information of the entire focus area can be detected. There will be no areas without exposure focus information in the focus area, thereby avoiding wafer edge defocusing during exposure.

[0090] In this embodiment, retaining at least a portion of the filtered non-graphical definition areas located within the exposure area that does not have exposure focus information in the graphic definition area includes: retaining all the filtered non-graphical definition areas located within the exposure area that does not have exposure focus information in the graphic definition area; or, retaining a portion of the filtered non-graphical definition areas located within the exposure area that does not have exposure focus information in the graphic definition area, and the areas of the retained non-graphical definition areas located within different exposure areas that do not have exposure focus information in the graphic definition area may be the same or different, and the areas of the retained non-graphical definition areas within different exposure areas may be adjusted according to the actual situation.

[0091] This embodiment also provides an operation interface system for selecting wafer focus areas, including: a database storage system and an operation interface related to wafer exposure, wherein the database storage system stores wafer layout and wafer layout exposure information, the operation interface communicates directly or indirectly with the database storage system, and the operation interface includes methods for selecting different exposure areas; the operation interface obtains wafer layout and wafer layout exposure information, and modifies the wafer layout exposure information according to the above-mentioned wafer focus area selection method, and filters and retains some non-graphically defined areas through the operation interface system, thereby avoiding wafer edge defocusing during exposure.

[0092] In summary, in the wafer focus area selection method and operation interface system provided by this invention, by simulating the detection of exposure focus information of the pattern definition area, the area in the pattern definition area that does not have exposure focus information is obtained as the first focus area. Then, the exposure area corresponding to the first focus area is obtained. At least a portion of the non-pattern definition area located in the exposure area corresponding to the first focus area is selected and set as the second focus area. Then, the pattern definition area and the second focus area are merged to generate the third focus area. The second focus area in the non-pattern definition area is subtracted to generate the fourth focus area. By selecting and setting the third focus area and the fourth focus area, the pattern definition area is expanded and set as the third focus area. The third focus area is equivalent to a new pattern definition area. When inspecting the wafer, the exposure focus information of the entire third focus area can be detected. There will be no area without exposure focus information in the third focus area, thereby avoiding wafer edge defocusing during exposure.

[0093] The above are merely preferred embodiments of the present invention and do not constitute any limitation on the present invention. Any equivalent substitutions or modifications made by those skilled in the art to the technical solutions and content disclosed in the present invention without departing from the scope of the present invention shall be deemed to have remained within the protection scope of the present invention.

Claims

1. A method for selecting a wafer focusing region, wherein, include: A wafer layout is provided, the wafer layout including a pattern definition area and a non-pattern definition area, the pattern definition area and the non-pattern definition area being disposed on the wafer and the non-pattern definition area surrounding the pattern definition area; Multiple exposure areas are set according to the graphic definition area and the non-graphic definition area, wherein at least one of the exposure areas includes a portion of the graphic definition area and a portion of the non-graphic definition area; Simulate the detection of exposure focus information in the graphic definition area, and obtain the area in the graphic definition area that does not have exposure focus information as the first focus area; Obtain the exposure area corresponding to the first focusing area; Select at least a portion of the non-graphically defined area located within the exposure area corresponding to the first focus area and set it as the second focus area; The graphic definition area and the second focus area are merged to generate a third focus area; The second focus area within the non-graphic definition area is subtracted to generate the fourth focus area; In addition, the third focusing region and the fourth focusing region are output to the wafer.

2. The method for selecting the wafer focusing region as described in claim 1, characterized in that, The graphic definition area is circular, the non-graphic definition area is annular, and the graphic definition area and the non-graphic definition area are connected.

3. The method for selecting the wafer focusing region as described in claim 2, characterized in that, The width of the non-graphic definition area is 1mm to 3mm.

4. The method for selecting the wafer focusing region as described in claim 1, characterized in that, Selecting at least a portion of the non-graphically defined area within the exposure area corresponding to the first focus area and setting it as the second focus area includes: Select all non-graphically defined areas within the exposure area corresponding to the first focus area and set them as the second focus area.

5. The method for selecting a wafer focusing region as described in claim 4, characterized in that, The width of the second focused area is the same as the width of the non-graphical definition area.

6. The method for selecting a wafer focusing region as described in claim 1, characterized in that, Selecting at least a portion of the non-graphically defined area within the exposure area corresponding to the first focus area and setting it as the second focus area includes: Along the radial direction of the non-graphic definition area outward from the graphic definition area, a portion of the non-graphic definition area within the exposure area corresponding to the first focus area is selected and set as the second focus area, wherein the width of the second focus area is smaller than the width of the non-graphic definition area.

7. The method for selecting a wafer focusing region as described in claim 6, characterized in that, The second focus area is adjacent to the graphic definition area.

8. The method for selecting a wafer focusing region as described in claim 1, characterized in that, The third focusing region and the fourth focusing region each have an irregular boundary.

9. A method for selecting a wafer focusing region, wherein, include: A wafer layout is provided, the wafer layout including a pattern definition area and a non-pattern definition area, the pattern definition area and the non-pattern definition area being disposed on the wafer and the non-pattern definition area surrounding the pattern definition area; Multiple exposure areas are set according to the graphic definition area and the non-graphic definition area, wherein at least one of the exposure areas includes a portion of the graphic definition area and a portion of the non-graphic definition area; Simulate and detect the exposure and focus information of the wafer layout; Filter the exposure and focus information of the non-graphically defined area; Obtain the exposure area in the graphic definition area that does not have exposure focus information; At least a portion of the non-graphically defined areas located within the exposure area that does not have exposure focus information are retained.

10. The method for selecting a wafer focusing region as described in claim 9, characterized in that, At least a portion of the non-graphically defined areas, which are filtered out and located within the exposure area that does not have exposure focus information, are retained. All non-graphic definition areas that are filtered out and located within the exposure area that does not have exposure focus information within the graphic definition area are retained.

11. The method for selecting a wafer focusing region as described in claim 9, characterized in that, At least a portion of the non-graphically defined areas, which are filtered out and located within the exposure area that does not have exposure focus information, are retained. The filtered portion of the non-graphically defined area located within the exposure area that does not have exposure focus information in the graphic definition area is retained, and the areas of the retained non-graphically defined areas located within different exposure areas that do not have exposure focus information in the graphic definition area are the same or different.

12. An operation interface system for selecting a wafer focus area, wherein, include: A database storage system stores wafer layouts and exposure information of the wafer layouts; An operation interface related to wafer exposure, wherein the operation interface communicates directly or indirectly with the database storage system; The wafer layout and its exposure information are obtained through the operation interface, and the exposure information of the wafer layout is modified according to the wafer focus area selection method according to any one of claims 1 to 8.

13. The operating interface system for selecting a wafer focus area as described in claim 12, characterized in that, The user interface includes options for selecting different exposure areas.

14. An operation interface system for selecting a wafer focus area, wherein, include: A database storage system stores wafer layouts and exposure information of the wafer layouts; An operation interface related to wafer exposure, wherein the operation interface communicates directly or indirectly with the database storage system; The wafer layout and its exposure information are obtained through the operation interface, and the exposure information of the wafer layout is modified according to the wafer focus area selection method according to any one of claims 9 to 11.

15. The operating interface system for selecting a wafer focus area as described in claim 14, characterized in that, The user interface includes options for selecting different exposure areas.

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