Light emitting chip, display panel and display device

Abstract

The present application provides a light-emitting chip, which includes a stacked substrate, a first semiconductor layer, a light-emitting layer and a second semiconductor layer. The light-emitting layer includes a first surface and a second surface that are arranged opposite to each other, the first surface is a surface connecting the light-emitting layer and the first semiconductor layer, and the second surface is a surface connecting the light-emitting layer and the second semiconductor layer. Part of the first surface convexly faces the side of the light-emitting layer facing the first semiconductor layer, and part of the first surface is concavely faces the side of the light-emitting layer facing away from the first semiconductor layer, so that more electrons enter the light-emitting layer; and / or, part of the second surface convexly faces the side of the light-emitting layer facing the second semiconductor layer, and part of the second surface is concavely faces the side of the light-emitting layer facing away from the second semiconductor layer, so that more holes enter the light-emitting layer, which increases the recombination probability of electrons and holes in the light-emitting layer, improves the light-emitting efficiency of the light-emitting layer, and further improves the light-emitting efficiency of the light-emitting chip. The present application also provides a display panel and a display device.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a light-emitting chip, a display panel having the light-emitting chip, and a display device having the display panel. Background Art

[0002] Micro LED and sub-millimeter LED have the advantages of high brightness, high contrast, high color gamut, high resolution, fast response time and low power consumption, which makes Micro LED and Mini LED widely used in the display field.

[0003] Micro LED and Mini LED usually include a light-emitting layer for recombination of electrons and holes and emission of light. However, in the prior art, the recombination probability of electrons and holes in the light-emitting layer is low, resulting in low luminous efficiency of the light-emitting layer.

[0004] Therefore, how to increase the recombination probability of electrons and holes in the light-emitting layer to improve the luminous efficiency of Micro LEDs and Mini LEDs is an urgent problem to be solved by those skilled in the art. Summary of the invention

[0005] In view of the above-mentioned deficiencies in the prior art, the purpose of the present application is to provide a light-emitting chip, a display panel having the light-emitting chip, and a display device having the display panel, which aims to increase the recombination probability of electrons and holes in the light-emitting layer to improve the luminous efficiency of Micro LED and Mini LED.

[0006] In order to solve the above technical problems, the present application provides a light-emitting chip, which includes a stacked substrate, a first semiconductor layer, a light-emitting layer and a second semiconductor layer. The light-emitting layer includes a first surface and a second surface arranged opposite to each other, the first surface is a surface on which the light-emitting layer is connected to the first semiconductor layer, and the second surface is a surface on which the light-emitting layer is connected to the second semiconductor layer. Part of the first surface is convex to the side of the light-emitting layer facing the first semiconductor layer, and part of the first surface is concave to the side of the light-emitting layer facing away from the first semiconductor layer; and / or part of the second surface is convex to the side of the light-emitting layer facing the second semiconductor layer, and part of the second surface is concave to the side of the light-emitting layer facing away from the second semiconductor layer.

[0007] In summary, the light-emitting chip provided in the present application can enable more electrons to enter the light-emitting layer from the first semiconductor layer by setting the first surface connected to the first semiconductor layer to an uneven surface, and can enable more holes to enter the light-emitting layer from the second semiconductor layer by setting the second surface connected to the second semiconductor layer to an uneven surface, thereby increasing the probability of recombination of electrons and holes in the light-emitting layer, improving the luminous efficiency of the light-emitting layer, and thereby improving the luminous efficiency of the light-emitting chip.

[0008] In an exemplary embodiment, the light-emitting layer also includes a first light-emitting structure and a plurality of second light-emitting structures, wherein the plurality of second light-emitting structures are protruded from the entire surface of the first light-emitting structure facing away from the second semiconductor layer, and the surfaces of the plurality of second light-emitting structures facing away from the first light-emitting structure constitute the first surface, and the surface of each of the second light-emitting structures facing away from the first light-emitting structure includes a curved surface or includes at least one inclined plane.

[0009] In an exemplary embodiment, the light-emitting layer further includes a first light-emitting structure and a plurality of second light-emitting structures, wherein the plurality of second light-emitting structures are protruded from a partial surface of the first light-emitting structure facing away from the second semiconductor layer, and the plurality of second light-emitting structures are spaced apart from each other, and a surface of the first light-emitting structure facing away from the second semiconductor layer where portions of the plurality of second light-emitting structures are exposed and a surface of the plurality of second light-emitting structures facing away from the first light-emitting structure constitute the first surface.

[0010] In an exemplary embodiment, the light-emitting layer also includes a first light-emitting structure and a plurality of third light-emitting structures, wherein the plurality of third light-emitting structures are protruded from the entire surface of the first light-emitting structure facing away from the first semiconductor layer, and the surfaces of the plurality of third light-emitting structures facing away from the first light-emitting structure constitute the second surface, and the surface of each of the third light-emitting structures facing away from the first light-emitting structure includes a curved surface or includes at least one inclined plane.

[0011] In an exemplary embodiment, the light-emitting layer further includes a first light-emitting structure and a plurality of third light-emitting structures, wherein the plurality of third light-emitting structures are protruded from a partial surface of the first light-emitting structure facing away from the first semiconductor layer, and the plurality of third light-emitting structures are spaced apart from each other, and a portion of the surface of the first light-emitting structure facing away from the first semiconductor layer where the plurality of third light-emitting structures are exposed and a surface of the plurality of third light-emitting structures facing away from the first light-emitting structure constitute the second surface.

[0012] In an exemplary embodiment, part of the light emitting layer is concave toward the first semiconductor layer, so that part of the first surface and the second surface of the light emitting layer are both concave toward the first semiconductor layer, and part of the light emitting layer is convex toward the second semiconductor layer, so that part of the first surface and the second surface of the light emitting layer are both convex toward the second semiconductor layer.

[0013] In an exemplary embodiment, the second semiconductor layer includes a first semiconductor element, a reflective element, and a second semiconductor element that are stacked together. The surface of the reflective element facing the first semiconductor element is a reflective surface of the reflective element. At least a portion of the reflective surface convexes toward a side of the reflective element that is opposite to the first semiconductor element. The reflective surface is used to reflect light emitted from the light-emitting layer to the second semiconductor layer to the substrate.

[0014] In an exemplary embodiment, the light-emitting chip further includes a plurality of light-gathering elements, which are arranged in the substrate, and the orthographic projection of the light-emitting layer on the substrate is located within the orthographic projection of the plurality of light-gathering elements on the substrate, so that the light emitted by the light-emitting layer is directed toward the plurality of light-gathering elements, and the light-gathering elements are used to gather the light directed toward the light-gathering elements and emit the light out of the light-gathering elements.

[0015] Based on the same inventive concept, an embodiment of the present application provides a display panel, which includes a driving substrate and a plurality of the above-mentioned light-emitting chips, wherein the plurality of light-emitting chips are arranged on one side of the driving substrate and are electrically connected to the driving substrate.

[0016] In summary, the display panel provided in the present application includes a driving substrate and a plurality of light-emitting chips. The light-emitting chip can enable more electrons to enter the light-emitting layer from the first semiconductor layer by setting the first surface connected to the first semiconductor layer to an uneven surface. The second surface connected to the second semiconductor layer is set to an uneven surface, so that more holes can enter the light-emitting layer from the second semiconductor layer, thereby increasing the recombination probability of electrons and holes in the light-emitting layer, improving the light-emitting efficiency of the light-emitting layer, and thereby improving the light-emitting efficiency of the light-emitting chip.

[0017] Based on the same inventive concept, an embodiment of the present application provides a display device, which includes a housing and the above-mentioned display panel, wherein the display panel is disposed in the housing, and a light emitting side of the display panel is exposed from the housing.

[0018] In summary, the display device provided in the present application includes a shell and a display panel, wherein the display panel includes a driving substrate and a plurality of light-emitting chips. The light-emitting chip enables more electrons to enter the light-emitting layer from the first semiconductor layer by setting the first surface connected to the first semiconductor layer to an uneven surface, and enables more holes to enter the light-emitting layer from the second semiconductor layer by setting the second surface connected to the second semiconductor layer to an uneven surface, thereby increasing the recombination probability of electrons and holes in the light-emitting layer, improving the light-emitting efficiency of the light-emitting layer, and thereby improving the light-emitting efficiency of the light-emitting chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0020] Figure 1 This is a schematic diagram of a first layer structure of a light-emitting chip disclosed in the first embodiment of the present application;

[0021] Figure 2 This is a schematic diagram of a first three-dimensional structure of a light-emitting layer of a light-emitting chip disclosed in the first embodiment of the present application;

[0022] Figure 3 This is a schematic diagram of the second layer structure of the light-emitting chip disclosed in the first embodiment of the present application;

[0023] Figure 4 A schematic diagram of a second three-dimensional structure of the light-emitting layer of the light-emitting chip disclosed in the first embodiment of the present application;

[0024] Figure 5 A schematic diagram of a third three-dimensional structure of the light-emitting layer of the light-emitting chip disclosed in the first embodiment of the present application;

[0025] Figure 6 This is a schematic diagram of a third layer structure of the light-emitting chip disclosed in the first embodiment of the present application;

[0026] Figure 7 A schematic diagram of a fourth three-dimensional structure of the light-emitting layer of the light-emitting chip disclosed in the first embodiment of the present application;

[0027] Figure 8 This is a schematic diagram of a first layer structure of a light-emitting chip disclosed in the second embodiment of the present application;

[0028] Fig. 9 This is a schematic diagram of a second layer structure of a light-emitting chip disclosed in the second embodiment of the present application;

[0029] Fig.10 This is a schematic diagram of a third layer structure of the light-emitting chip disclosed in the second embodiment of the present application;

[0030] Fig.11 This is a schematic diagram of a first three-dimensional structure of a light-emitting layer of a light-emitting chip disclosed in the second embodiment of the present application;

[0031] Fig.12 A schematic diagram of a second three-dimensional structure of a light-emitting layer of a light-emitting chip disclosed in the second embodiment of the present application;

[0032] Fig.13 This is a schematic diagram of a first layer structure of a light-emitting chip disclosed in the third embodiment of the present application;

[0033] Fig.14 This is a schematic diagram of a second layer structure of a light-emitting chip disclosed in the third embodiment of the present application;

[0034] Fig.15 This is a schematic diagram of a first three-dimensional structure of a light-emitting layer of a light-emitting chip disclosed in the third embodiment of the present application;

[0035] Fig.16 A schematic diagram of a second three-dimensional structure of a light-emitting layer of a light-emitting chip disclosed in the third embodiment of the present application;

[0036] Fig.17 This is a schematic diagram of a first layer structure of a light-emitting chip disclosed in the fourth embodiment of the present application;

[0037] Fig.18 This is a schematic diagram of a second layer structure of a light-emitting chip disclosed in the fourth embodiment of the present application;

[0038] Fig.19 This is a schematic diagram of a third layer structure of the light-emitting chip disclosed in the fourth embodiment of the present application;

[0039] Fig. 20 This is a schematic diagram of a first layer structure of a light-emitting chip disclosed in the fifth embodiment of the present application;

[0040] Fig.21 A schematic diagram of the layer structure of a display panel disclosed in the sixth embodiment of the present application;

[0041] Fig. 22 It is a schematic diagram of the layer structure of the display device disclosed in the seventh embodiment of the present application.

[0042] Description of reference numerals:

[0043] 10-substrate; 10a-refractive surface; 20-first semiconductor layer; 21-first semiconductor structure; 21a-mounting surface; 22-second semiconductor structure; 30-light-emitting layer; 30a-first surface; 30b-second surface; 31-first light-emitting structure; 32-second light-emitting structure; 33-third light-emitting structure; 40-second semiconductor layer; 41-first semiconductor element; 42-reflective element; 42a-reflective surface; 43-second semiconductor element; 60-first electrode; 70-second electrode; 90-focusing element; 100-light-emitting chip; 300-driving substrate; 400-display panel; 500-housing; 600-display device. DETAILED DESCRIPTION

[0044] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thoroughly and comprehensively understood.

[0045] The following descriptions of the embodiments are with reference to the attached diagrams to illustrate specific embodiments that the present application can be used to implement. The serial numbers for the components herein, such as "first", "second", etc., are only used to distinguish the objects described and do not have any order or technical meaning. The "connection" and "coupling" mentioned in the present application, unless otherwise specified, include direct and indirect connections (couplings). The directional terms mentioned in the present application, such as "upper", "lower", "front", "back", "left", "right", "inside", "outside", "side", etc., are only with reference to the directions of the attached drawings. Therefore, the directional terms used are for better and clearer explanation and understanding of the present application, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present application.

[0046] In the description of the present application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection; it can be directly connected, or indirectly connected through an intermediate medium, or it can be internal communication between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances. It should be noted that the terms "first", "second", etc. in the specification and claims of this application and the drawings are used to distinguish different objects, rather than to describe a specific order.

[0047] In addition, the terms "include", "may include", "contain", or "may include" used in the present application indicate the existence of the corresponding functions, operations, elements, etc. disclosed, and do not limit one or more other functions, operations, elements, etc. In addition, the terms "include" or "contain" indicate the existence of the corresponding features, numbers, operations, elements, components, or combinations thereof disclosed in the specification, and do not exclude the existence or addition of one or more other features, numbers, operations, elements, components, or combinations thereof, and are intended to cover non-exclusive inclusions. In addition, when describing the embodiments of the present application, "may" is used to indicate "one or more embodiments of the present application". And, the term "exemplary" is intended to refer to an example or illustration.

[0048] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0049] See also Figure 1 , Figure 1 The first layer structure diagram of the light-emitting chip disclosed in the first embodiment of the present application. The light-emitting chip 100 provided in the first embodiment of the present application includes a substrate 10, a first semiconductor layer 20, a light-emitting layer 30 and a second semiconductor layer 40 which are stacked in sequence, that is, the first semiconductor layer 20 is arranged on a surface of the substrate 10, the light-emitting layer 30 is arranged on a part of the surface of the first semiconductor layer 20 facing away from the substrate 10, and the second semiconductor layer 40 is arranged on the surface of the light-emitting layer 30 facing away from the first semiconductor layer 20. The substrate 10 is used to provide a surface formed by the first semiconductor layer 20. The first semiconductor layer 20 can be an N (Negative) type semiconductor, for example, an N-type gallium nitride layer, the first semiconductor layer 20 is used to provide electrons to the light-emitting layer 30, the second semiconductor layer 40 can be a P (Positive) type semiconductor, for example, a P-type gallium nitride layer, the second semiconductor layer 40 is used to provide holes to the light-emitting layer 30. The light-emitting layer 30 can be a multi-quantum well (MQW) layer, and the light-emitting layer 30 is used to recombine electrons and holes and emit light.

[0050] In this application implementation mode, please refer to Figure 1The light emitting layer 30 includes a first surface 30a, which is a surface connecting the light emitting layer 30 and the first semiconductor layer 20. Part of the first surface 30a is convex to the side of the light emitting layer 30 facing the first semiconductor layer 20, and part of the first surface 30a is concave to the side of the light emitting layer 30 facing away from the first semiconductor layer 20, that is, the first surface 30a is uneven, that is, the first surface 30a is not a flat surface. The shape of the surface connecting the first semiconductor layer 20 and the first surface 30a is complementary to the shape of the first surface 30a.

[0051] It can be understood that by setting the first surface 30a connected to the first semiconductor layer 20 to be uneven, more electrons can enter the light-emitting layer 30 from the first semiconductor layer 20, thereby increasing the probability of recombination of electrons and holes in the light-emitting layer 30, improving the luminous efficiency of the light-emitting layer 30, and thereby improving the luminous efficiency of the light-emitting chip 100.

[0052] In this application implementation mode, please refer to Figure 1 The light emitting layer 30 further includes a first light emitting structure 31 and a plurality of second light emitting structures 32. The first light emitting structure 31 may be plate-shaped as a whole. The first light emitting structure 31 is disposed on the surface of the second semiconductor layer 40 facing the first semiconductor layer 20. The shapes and sizes of the plurality of second light emitting structures 32 are consistent. The plurality of second light emitting structures 32 are convexly disposed on the entire surface of the first light emitting structure 31 facing away from the second semiconductor layer 40. The plurality of second light emitting structures 32 are connected to each other. The surfaces of the plurality of second light emitting structures 32 facing away from the first light emitting structure 31 constitute the first surface 30a.

[0053] In an exemplary embodiment, see Figure 2 , Figure 2 The first three-dimensional structural diagram of the light-emitting layer of the light-emitting chip disclosed in the first embodiment of the present application. The overall shape of the second light-emitting structure 32 can be a semi-cylindrical or semi-elliptical cylinder, the semi-cylindrical or semi-elliptical cylinder includes a plane and a curved surface, the plane of the semi-cylindrical or semi-elliptical cylinder is connected to the first light-emitting structure 31, the curved surface of the semi-cylindrical is the surface of the semi-cylindrical back to the first light-emitting structure 31, and the curved surface of the semi-elliptical cylinder is the surface of the semi-elliptical cylinder back to the first light-emitting structure 31, wherein the curved surface of the semi-cylindrical or semi-elliptical cylinder constitutes the first surface 30a of the light-emitting layer 30.

[0054] In this application implementation mode, please refer to Figure 1The first semiconductor layer 20 includes a first semiconductor structure 21 and a second semiconductor structure 22 which are stacked, wherein the first semiconductor structure 21 is disposed on a surface of the substrate 10, and the second semiconductor structure 22 is disposed on a portion of the surface of the first semiconductor structure 21 which faces away from the substrate 10, i.e., the orthographic projection of the second semiconductor structure 22 on the substrate 10 is located within the orthographic projection of the first semiconductor structure 21 on the substrate 10, so that a portion of the first semiconductor structure 21 is exposed on a side of the second semiconductor structure 22 which faces away from the first semiconductor structure 21, so as to form a mounting surface 21a, i.e., the mounting surface 21a is a portion of the surface of the first semiconductor structure 21 which faces away from the substrate 10 and is not covered by the second semiconductor structure 22. The light emitting layer 30 is disposed on a surface of the second semiconductor structure 22 which faces away from the first semiconductor structure 21, i.e., the second semiconductor structure 22 is connected to the first surface 30a.

[0055] In this application implementation mode, please refer to Figure 1 The light emitting chip 100 further includes a first electrode 60 and a second electrode 70. The first electrode 60 is disposed on a portion of the mounting surface 21a and is electrically connected to the first semiconductor layer 20. The second electrode 70 is disposed on a portion of the surface of the second semiconductor layer 40 that faces away from the light emitting layer 30 and is electrically connected to the second semiconductor layer 40.

[0056] In an exemplary embodiment, the light emitting layer 30 may be a multiple quantum well (MQW) layer. The light emitting chip 100 may be a micron light emitting diode (Micro Light-Emitting Diode, MicroLED) or a sub-millimeter light emitting diode (Mini Light-Emitting Diode, Mini LED).

[0057] See also Figure 3 , Figure 3 Schematic diagram of the second layer structure of the light-emitting chip disclosed in the first embodiment of the present application. The light-emitting chip of the second layer structure is different from the light-emitting chip of the first layer structure in that: a plurality of the second light-emitting structures 32 are convexly arranged on the surface of the first light-emitting structure 31 facing away from the second semiconductor layer 40. For the description of the similarities between the light-emitting chip of the second layer structure and the light-emitting chip of the first layer structure, please refer to the relevant description of the light-emitting chip of the first layer structure.

[0058] In this application implementation mode, please refer to Figure 3, a plurality of second light emitting structures 32 are convexly arranged on the partial surface of the first light emitting structure 31 facing away from the second semiconductor layer 40, and the plurality of second light emitting structures 32 are arranged at intervals from each other, that is, the portion of the surface of the first light emitting structure 31 facing away from the second semiconductor layer 40 is not covered by the plurality of second light emitting structures 32, and the uncovered portions of the surface of the first light emitting structure 31 facing away from the second semiconductor layer 40 are spaced from each other, so that the plurality of second light emitting structures 32 are exposed on the partial surface of the first light emitting structure 31 facing away from the second semiconductor layer 40. The portion of the surface of the first light emitting structure 31 facing away from the second semiconductor layer 40 that exposes the plurality of second light emitting structures 32 and the surface of the plurality of second light emitting structures 32 facing away from the first light emitting structure 31 constitute the first surface 30a. It can be understood that the surface of the second light emitting structure 32 facing away from the first light emitting structure 31 can be of any shape, and the present application does not impose any specific limitation on this.

[0059] In an exemplary embodiment, see Figure 4 , Figure 4 The second three-dimensional structure schematic diagram of the light-emitting layer of the light-emitting chip disclosed in the first embodiment of the present application. The overall shape of the second light-emitting structure 32 can be a semi-ellipsoid or a hemisphere, the semi-ellipsoid or the hemisphere includes a bottom surface and a curved surface, the bottom surface of the semi-ellipsoid or the hemisphere is connected to the first light-emitting structure 31, the curved surface of the semi-ellipsoid is the surface of the semi-ellipsoid facing away from the first light-emitting structure 31, and the curved surface of the hemisphere is the surface of the hemisphere facing away from the first light-emitting structure 31, wherein the curved surface of the semi-ellipsoid or the curved surface of the hemisphere constitutes the first surface 30a of the light-emitting layer 30.

[0060] See also Figure 5 , Figure 5 The third three-dimensional structure schematic diagram of the light-emitting layer of the light-emitting chip disclosed in the first embodiment of the present application. The overall shape of the second light-emitting structure 32 is a pyramid, and the pyramid includes a bottom surface and multiple side surfaces. The bottom surface of the pyramid is connected to the first light-emitting structure 31, and the multiple side surfaces of the pyramid are the surfaces of the pyramid facing away from the first light-emitting structure 31, wherein the multiple side surfaces of the pyramid constitute the first surface 30a of the light-emitting layer 30.

[0061] See also Figure 6 , Figure 6 This is a schematic diagram of the third layer structure of the light-emitting chip disclosed in the first embodiment of the present application. The light-emitting chip of the third layer structure is different from the light-emitting chip of the first layer structure in that the shape of the second light-emitting structure 32 is different. For the description of the similarities between the light-emitting chip of the third layer structure and the light-emitting chip of the first layer structure, please refer to the relevant description of the first layer structure.

[0062] In an exemplary embodiment, see Figure 7 , Figure 7This is a schematic diagram of the fourth three-dimensional structure of the light-emitting layer of the light-emitting chip disclosed in the first embodiment of the present application. The overall shape of the second light-emitting structure 32 is a triangular prism, and the triangular prism includes three side surfaces, one side surface of the triangular prism is connected to the first light-emitting structure 31, and the other two side surfaces of the triangular prism are the surfaces of the triangular prism facing away from the first light-emitting structure 31, and constitute the first surface 30a of the light-emitting layer 30. It can also be that one side surface of the triangular prism is the surface of the triangular prism facing away from the first light-emitting structure 31, that is, each surface of the second light-emitting structure 32 facing away from the first light-emitting structure 31 includes at least one inclined plane, wherein the inclined plane means that the plane is not perpendicular to the direction in which the first semiconductor layer 20 faces away from the light-emitting layer 30.

[0063] See also Figures 8 to 10 , Figure 8 This is a schematic diagram of a first layer structure of a light-emitting chip disclosed in the second embodiment of the present application. Fig. 9 Schematic diagram of the second layer structure of the light-emitting chip disclosed in the second embodiment of the present application, Fig.10 This is a schematic diagram of the third layer structure of the light-emitting chip disclosed in the second embodiment of the present application. The light-emitting chip of the second embodiment differs from the light-emitting chip of the first embodiment in that: the light-emitting layer 30 includes a second surface 30b, the second surface 30b is the surface connecting the light-emitting layer 30 and the second semiconductor layer 40, part of the second surface 30b is convex to the side of the light-emitting layer 30 facing the second semiconductor layer 40, and part of the second surface 30b is concave to the side of the light-emitting layer 30 facing away from the second semiconductor layer 40, that is, the second surface 30b is uneven, that is, the second surface 30b is not a flat surface, and the shape of the surface connecting the second semiconductor layer 40 and the second surface 30b is complementary to the shape of the second surface 30b.

[0064] It can be understood that by setting the second surface 30b connected to the second semiconductor layer 40 to be uneven, more holes can enter the light-emitting layer 30 from the second semiconductor layer 40, thereby increasing the probability of recombination of electrons and holes in the light-emitting layer 30, improving the luminous efficiency of the light-emitting layer 30, and further improving the luminous efficiency of the light-emitting chip 100.

[0065] In this application implementation mode, please refer to Figure 8 and Fig. 9The light emitting layer 30 further includes a plurality of third light emitting structures 33, and the shapes and sizes of the plurality of third light emitting structures 33 are consistent. The plurality of third light emitting structures 33 are convexly arranged on the entire surface of the first light emitting structure 31 facing away from the first semiconductor layer 20, that is, the plurality of third light emitting structures 33 and the plurality of second light emitting structures 32 are respectively located on opposite sides of the first light emitting structure 31, and the surface of the plurality of third light emitting structures 33 facing away from the first light emitting structure 31 constitutes the second surface 30b.

[0066] In an exemplary embodiment, see Fig.11 , Fig.11 The first three-dimensional structural diagram of the light-emitting layer of the light-emitting chip disclosed in the second embodiment of the present application. The overall shape of the third light-emitting structure 33 is a semi-cylindrical or semi-elliptical cylinder, the semi-cylindrical or semi-elliptical cylinder includes a plane and a curved surface, the plane of the semi-cylindrical or semi-elliptical cylinder is connected to the first light-emitting structure 31, the curved surface of the semi-cylindrical cylinder is the surface of the semi-cylindrical cylinder facing away from the first light-emitting structure 31, and the curved surface of the semi-elliptical cylinder is the surface of the semi-elliptical cylinder facing away from the first light-emitting structure 31, wherein the curved surface of the semi-cylindrical or semi-elliptical cylinder constitutes the second surface 30b of the light-emitting layer 30.

[0067] In an exemplary embodiment, see Fig.12 , Fig.12 This is a schematic diagram of the second three-dimensional structure of the light-emitting layer of the light-emitting chip disclosed in the second embodiment of the present application, wherein the overall shape of the third light-emitting structure 33 is a triangular prism, and the triangular prism includes three side surfaces, one side surface of the triangular prism is connected to the first light-emitting structure 31, and the other two side surfaces of the triangular prism are the surfaces of the triangular prism facing away from the first light-emitting structure 31, and constitute the second surface 30b of the light-emitting layer 30. Alternatively, one side surface of the triangular prism is the surface of the triangular prism facing away from the first light-emitting structure 31, that is, the surface of each of the third light-emitting structures 33 facing away from the first light-emitting structure 31 includes at least one inclined plane, wherein the inclined plane refers to the plane not being perpendicular to the direction in which the second semiconductor layer 40 faces away from the light-emitting layer 30.

[0068] In this application implementation mode, please refer to Fig.10, the plurality of third light emitting structures 33 are convexly arranged on the partial surface of the first light emitting structure 31 facing away from the first semiconductor layer 20, and the plurality of third light emitting structures 33 are arranged at intervals from each other, that is, the portion of the surface of the first light emitting structure 31 facing away from the plurality of second light emitting structures 32 is not covered by the plurality of third light emitting structures 33, and the uncovered portions of the surface of the first light emitting structure 31 facing away from the plurality of second light emitting structures 32 are spaced from each other, so that the portion of the surface of the first light emitting structure 31 facing away from the plurality of second light emitting structures 32 exposes the plurality of third light emitting structures 33, and the portion of the surface of the first light emitting structure 31 facing away from the plurality of second light emitting structures 32 that exposes the plurality of third light emitting structures 33 and the surface of the plurality of third light emitting structures 33 facing away from the first light emitting structure 31 constitute the second surface 30b. It can be understood that the surface of the third light emitting structure 33 facing away from the first light emitting structure 31 can be of any shape, and the present application does not impose any specific limitation on this.

[0069] See also Fig.13 and Fig.14 , Fig.13 Schematic diagram of the first layer structure of the light-emitting chip disclosed in the third embodiment of the present application, Fig.14 This is a schematic diagram of the second layer structure of the light-emitting chip disclosed in the third embodiment of the present application. The light-emitting chip of the third embodiment is different from the light-emitting chip of the first embodiment and the light-emitting chip of the second embodiment in that: the light-emitting layer 30 as a whole, part of the light-emitting layer 30 is concave toward the side where the first semiconductor layer 20 is located, so that the first surface 30a and the second surface 30b of part of the light-emitting layer 30 are both concave toward the side where the first semiconductor layer 20 is located, and part of the light-emitting layer 30 is convex toward the side where the second semiconductor layer 40 is located, so that the first surface 30a and the second surface 30b of part of the light-emitting layer 30 are both convex toward the side where the second semiconductor layer 40 is located.

[0070] In an exemplary embodiment, see Fig.15 and Fig.16 , Fig.15 Schematic diagram of a first three-dimensional structure of a light-emitting layer of a light-emitting chip disclosed in the third embodiment of the present application, Fig.16 Schematic diagram of the second three-dimensional structure of the light-emitting layer of the light-emitting chip disclosed in the third embodiment of the present application. The light-emitting layer 30 may be in the shape of a wave plate as a whole. Fig.15 The light emitting layer 30 as a whole may be in the shape of an arc wave plate, that is, the first surface 30a and the second surface 30b of the portion of the light emitting layer 30 concave toward the first semiconductor layer 20 are both arc surfaces, and the first surface 30a and the second surface 30b of the portion of the light emitting layer 30 convex toward the second semiconductor layer 40 are both arc surfaces. Fig.16The light-emitting layer 30 as a whole may be in the shape of a triangular wavy plate, that is, the first surface 30a and the second surface 30b of the portion of the light-emitting layer 30 concave toward the first semiconductor layer 20 are both inclined planes, that is, the first surface 30a and the second surface 30b of the portion of the light-emitting layer 30 convex toward the second semiconductor layer 40 are both inclined planes.

[0071] See also Figures 17 to 19 , Fig.17 Schematic diagram of the first layer structure of the light-emitting chip disclosed in the fourth embodiment of the present application, Fig.18 Schematic diagram of the second layer structure of the light-emitting chip disclosed in the fourth embodiment of the present application, Fig.19 This is a schematic diagram of the third layer structure of the light-emitting chip disclosed in the fourth embodiment of the present application. The layer structure of the light-emitting chip of the fourth embodiment is different from the layer structure of the light-emitting chip of the first embodiment, the layer structure of the light-emitting chip of the second embodiment, and the layer structure of the light-emitting chip of the third embodiment in that the second semiconductor layer 40 includes a first semiconductor element 41, a reflective element 42, and a second semiconductor element 43 that are stacked.

[0072] Specifically, the first semiconductor element 41 is disposed on the surface of the light emitting layer 30 facing away from the first semiconductor layer 20, that is, the first semiconductor element 41 is disposed on the second surface 30b of the light emitting layer 30, the reflective element 42 is disposed on the surface of the first semiconductor element 41 facing away from the light emitting layer 30, and the second semiconductor element 43 is disposed on the surface of the reflective element 42 facing away from the first semiconductor element 41. The reflective element 42 is electrically connected to the first semiconductor element 41 and the second semiconductor element 43, respectively, so that holes can be transmitted to the light emitting layer 30 through the first semiconductor element 41, the reflective element 42 and the second semiconductor element 43. The second electrode 70 is disposed on a portion of the surface of the second semiconductor element 43 facing away from the reflective element 42, and is electrically connected to the second semiconductor element 43. The surface of the reflective element 42 facing the first semiconductor element 41 is the reflective surface 42a of the reflective element 42, and the reflective surface 42a is used to reflect the light emitted from the light emitting layer 30 to the second semiconductor layer 40 to the substrate 10.

[0073] It is understandable that the light emitted by the light emitting layer 30 will be emitted toward the second semiconductor layer 40 and the substrate 10. Since other functional layers are disposed on the side of the second semiconductor layer 40 facing away from the light emitting layer 30, the side of the second semiconductor layer 40 facing away from the light emitting layer 30 will not emit light, resulting in the light emitted toward the second semiconductor layer 40 being lost in the second semiconductor layer 40. The substrate 10 is the light emitting part of the light emitting chip 100. The reflective element 42 is disposed in the second semiconductor layer 40 to reflect the light toward the substrate 10, thereby improving the utilization rate of the light emitted toward the second semiconductor layer 40 and improving the light emitting brightness of the light emitting chip 100.

[0074] In an exemplary embodiment, the reflective element 42 includes a metal material having high electrical conductivity and good light reflection performance.

[0075] In an exemplary embodiment, see Figures 17 to 19 At least part of the reflection surface 42a protrudes toward the side of the reflection element 42 facing away from the first semiconductor element 41, changing the angle of the light reflected from the reflection surface 42a to the substrate 10, so that the light reflected from the reflection surface 42a to the substrate 10 is more uniform. Fig.17 The reflecting element 42 as a whole can be in the shape of an arc plate, and the reflecting surface 42a is an arc surface. Fig.18 The reflective element 42 as a whole may be in the shape of a triangular wave plate, that is, the reflective surface 42a is composed of a plurality of inclined planes connected in sequence. Fig.19 The reflecting element 42 may be composed of a plurality of arc plates connected in sequence, and the surfaces of the plurality of arc plates facing the first semiconductor element 41 constitute the reflecting surface 42a.

[0076] See also Fig. 20 , Fig. 20 This is a schematic diagram of the first layer structure of the light-emitting chip disclosed in the fifth embodiment of the present application. The light-emitting chip of the fifth embodiment is different from the light-emitting chip of the first embodiment, the light-emitting chip of the second embodiment, the light-emitting chip of the third embodiment, and the light-emitting chip of the fourth embodiment in that the light-emitting chip 100 further includes a plurality of light-focusing elements 90. For the description of other parts of the light-emitting chip of the fifth embodiment, please refer to the description of the light-emitting chip of the first embodiment, the light-emitting chip of the second embodiment, the light-emitting chip of the third embodiment, and the light-emitting chip of the fourth embodiment.

[0077] Specifically, the plurality of light-concentrating elements 90 are sequentially arranged in the substrate 10, and the plurality of light-concentrating elements 90 are distributed in a layer. The orthographic projection of the light-emitting layer 30 on the substrate 10 is located within the orthographic projections of the plurality of light-concentrating elements 90 on the substrate 10, so that the light emitted by the light-emitting layer 30 can be directed toward the plurality of light-concentrating elements 90. The orthographic projection of the reflective element 42 on the substrate 10 is located within the orthographic projections of the plurality of light-concentrating elements 90 on the substrate 10, so that the light reflected by the reflective element 42 can be directed toward the plurality of light-concentrating elements 90. The light-concentrating element 90 is used to concentrate the light directed toward the light-concentrating element 90, and the light passes through the light-concentrating element 90, and the light-concentrating element 90 is used to concentrate the light directed toward the light-concentrating element 90 and transmit out of the light-concentrating element 90. The light-concentrating element 90 may be a convex lens.

[0078] It is understandable that the light emitted by the light emitting layer 30 will be scattered in the first semiconductor element 41, the first semiconductor layer 20 and the substrate 10, resulting in lower brightness on the side of the substrate 10 facing away from the first semiconductor layer 20. By providing a plurality of light focusing elements 90 for focusing light in the substrate 10, it is beneficial to increase the brightness on the side of the substrate 10 facing away from the first semiconductor layer 20.

[0079] In an exemplary embodiment, see Fig. 20 The surface of the substrate 10 facing away from the first semiconductor layer 20 is a refractive surface 10a, and the refractive surface 10a may be a curved surface, and the refractive surface 10a is convex toward the direction of the substrate 10 facing away from the first semiconductor layer 20, so that the substrate 10 may be a convex lens. Fig. 20 The dotted arrow in is the propagation direction of the light, and the refractive surface 10a is used to refract the light incident on the refractive surface 10a to the side of the substrate 10 facing away from the first semiconductor layer 20, so that the angle between the direction of the light refracted to the side of the substrate 10 facing away from the first semiconductor layer 20 and the direction of the substrate 10 facing away from the first semiconductor layer 20 is less than a preset angle, that is, the refractive surface 10a is used to gather the light incident on the refractive surface 10a. The preset angle can be 10 degrees to 50 degrees, for example, 10 degrees, 15 degrees, 20 degrees, 24 degrees, 30 degrees, 37 degrees, 40 degrees, 45 degrees, 50, or other values, and the present application does not impose specific restrictions on this.

[0080] It can be understood that the refractive surface 10 a gathers the light incident on the refractive surface 10 a , which is beneficial to increase the brightness of the side of the substrate 10 facing away from the first semiconductor layer 20 .

[0081] In summary, the light-emitting chip 100 provided in the embodiment of the present application includes a substrate 10, a first semiconductor layer 20, a light-emitting layer 30 and a second semiconductor layer 40 which are stacked. The first semiconductor layer 20 is used to provide electrons to the light-emitting layer 30, and the second semiconductor layer 40 is used to provide holes to the light-emitting layer 30. The light-emitting layer 30 is used to recombine electrons and holes and emit light. The light-emitting layer 30 includes a first surface 30a and a second surface 30b. The first surface 30a is a surface on which the light-emitting layer 30 is connected to the first semiconductor layer 20, and the second surface 30b is a surface on which the light-emitting layer 30 is connected to the second semiconductor layer 40. Part of the first surface 30a is convex to the side of the light-emitting layer 30 facing the first semiconductor layer 20, and part of the first surface 30a is concave to the side of the light-emitting layer 30 facing away from the first semiconductor layer 20; and / or part of the second surface 30b is convex to the side of the light-emitting layer 30 facing the second semiconductor layer 40, and part of the second surface 30b is concave to the side of the light-emitting layer 30 facing away from the second semiconductor layer 40. Therefore, by setting the first surface 30a connected to the first semiconductor layer 20 as an uneven surface, more electrons can enter the light-emitting layer 30 from the first semiconductor layer 20, and by setting the second surface 30b connected to the second semiconductor layer 40 as an uneven surface, more holes can enter the light-emitting layer 30 from the second semiconductor layer 40, thereby increasing the recombination probability of electrons and holes in the light-emitting layer 30, improving the luminous efficiency of the light-emitting layer 30, and thereby improving the luminous efficiency of the light-emitting chip 100.

[0082] Based on the same inventive concept, the sixth embodiment of the present application provides a display panel. Fig.21 , Fig.21 The sixth embodiment of the present application discloses a layer structure diagram of a display panel. The display panel 400 provided in the present application embodiment includes a drive substrate 300 and a plurality of the above-mentioned light-emitting chips 100. The plurality of light-emitting chips 100 are arranged on one side of the drive substrate 300 and are electrically connected to the drive substrate 300. The drive substrate 300 is used to transmit electrical signals to the plurality of light-emitting chips 100 to control the plurality of light-emitting chips 100 to emit light. Figures 1 to 20 The light emitting chip 100 has been described in detail in the illustrated embodiment, and will not be described again herein.

[0083] In an exemplary embodiment, each of the light emitting chips 100 is connected to the driving substrate 300 through the first electrode 60 and the second electrode 70 to achieve electrical connection.

[0084] It is understandable that the display panel can be used for electronic devices including functions such as personal digital assistants (PDA) and / or music players, such as mobile phones, tablet computers, wearable electronic devices with wireless communication functions (such as smart watches), etc. The above-mentioned electronic devices may also be other electronic devices, such as laptop computers (Laptop) with touch-sensitive surfaces (such as touch panels), etc. In some embodiments, the electronic device may have a communication function, that is, it may establish communication with the network through 2G (second-generation mobile phone communication technology specifications), 3G (third-generation mobile phone communication technology specifications), 4G (fourth-generation mobile phone communication technology specifications), 5G (fifth-generation mobile phone communication technology specifications) or W-LAN (wireless local area network) or communication methods that may appear in the future. For the sake of simplicity, this embodiment of the present application is not further limited.

[0085] Based on the same inventive concept, the seventh embodiment of the present application also provides a display device. Fig. 22 , Fig. 22 The display device 600 provided in the embodiment of the present application comprises a housing 500 and the above-mentioned display panel 400, wherein the display panel 400 is disposed in the housing 500, and the light emitting side of the display panel 400 is exposed from the housing 500.

[0086] It can be understood that the display device 600 can be used in electronic devices including but not limited to televisions, tablet computers, laptop computers, desktop computers, mobile phones, vehicle-mounted displays, smart watches, smart bracelets, smart glasses, etc. According to the embodiment of the present application, the specific type of the display device 600 is not particularly limited, and those skilled in the art can design it accordingly according to the specific use requirements of the display device 600, which will not be repeated here.

[0087] In an exemplary embodiment, the display device 600 may also include other necessary components and parts such as a power board, a high-voltage board, and a key control board. Those skilled in the art may make corresponding supplements based on the specific type and actual functions of the display device 600, which will not be repeated here.

[0088] In other embodiments of the present application, the display device 600 may further include a processor and a memory, wherein the processor is electrically connected to the display panel 400 and is used to control the display panel 400 to display. The memory is electrically connected to the processor and is used to store program codes required for the processor to run, control the display content of the display panel 400, etc.

[0089] In an exemplary embodiment, the memory may include a volatile memory (Volatile Memory), such as a random access memory (Random Access Memory, RAM); the memory may also include a non-volatile memory (NVM), such as a read-only memory (Read-Only Memory, ROM), a flash memory (Flash Memory, FM), a hard disk drive (Hard Disk Drive, HDD) or a solid-state drive (SSD). The memory may also include a combination of the above-mentioned types of memory.

[0090] In an exemplary embodiment, the processor includes one or more general-purpose processors, wherein a general-purpose processor can be any type of device capable of processing electronic instructions, including a central processing unit (CPU), a microprocessor, a microcontroller, a main processor, a controller, etc. The processor is used to execute various types of digital storage instructions, such as software or firmware programs stored in the memory, which enables the computing device to provide a wide variety of services.

[0091] It should be understood that the terms "first", "second", etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0092] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples" or "some examples" etc. means that the specific features, structures or characteristics described in conjunction with the embodiments or examples are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0093] It should be understood that the application of this application is not limited to the above examples. For ordinary technicians in this field, they can make improvements or changes based on the above description, and all these improvements and changes should fall within the scope of protection of the claims attached to this application. Ordinary technicians in this field can understand that all or part of the processes of the above embodiments are implemented, and equivalent changes made according to the claims of this application still fall within the scope covered by this application.

Claims

1. A light-emitting chip, comprising a substrate, a first semiconductor layer, a light-emitting layer and a second semiconductor layer stacked in layers, characterized in that: The light emitting layer comprises a first surface and a second surface which are arranged opposite to each other, the first surface is a surface where the light emitting layer is connected to the first semiconductor layer, and the second surface is a surface where the light emitting layer is connected to the second semiconductor layer; Part of the first surface is convex toward the side of the light-emitting layer facing the first semiconductor layer, and part of the first surface is concave toward the side of the light-emitting layer facing away from the first semiconductor layer, and the first surface is used to increase the number of electrons entering the light-emitting layer from the first semiconductor layer; and / or part of the second surface is convex toward the side of the light-emitting layer facing the second semiconductor layer, and part of the second surface is concave toward the side of the light-emitting layer facing away from the second semiconductor layer, and the second surface is used to increase the number of holes entering the light-emitting layer from the second semiconductor layer.

2. The light-emitting chip according to claim 1, characterized in that: The light-emitting layer also includes a first light-emitting structure and multiple second light-emitting structures. The multiple second light-emitting structures are protruded from the entire surface of the first light-emitting structure facing away from the second semiconductor layer. The surfaces of the multiple second light-emitting structures facing away from the first light-emitting structure constitute the first surface. The surface of each second light-emitting structure facing away from the first light-emitting structure includes a curved surface or includes at least one inclined plane.

3. The light-emitting chip according to claim 1, characterized in that: The light-emitting layer also includes a first light-emitting structure and a plurality of second light-emitting structures. The plurality of second light-emitting structures are protruding from a partial surface of the first light-emitting structure facing away from the second semiconductor layer. The plurality of second light-emitting structures are spaced apart from each other. The surface of the first light-emitting structure facing away from the second semiconductor layer in which the plurality of second light-emitting structures are exposed and the surface of the plurality of second light-emitting structures facing away from the first light-emitting structure constitute the first surface.

4. The light-emitting chip according to claim 1, characterized in that: The light-emitting layer also includes a first light-emitting structure and a plurality of third light-emitting structures. The plurality of third light-emitting structures are protruded from the entire surface of the first light-emitting structure facing away from the first semiconductor layer. The surfaces of the plurality of third light-emitting structures facing away from the first light-emitting structure constitute the second surface. The surface of each of the third light-emitting structures facing away from the first light-emitting structure includes a curved surface or includes at least one inclined plane.

5. The light-emitting chip according to claim 1, characterized in that: The light-emitting layer also includes a first light-emitting structure and a plurality of third light-emitting structures. The plurality of third light-emitting structures are protruding from a partial surface of the first light-emitting structure facing away from the first semiconductor layer. The plurality of third light-emitting structures are spaced apart from each other. The portion of the surface of the first light-emitting structure facing away from the first semiconductor layer that exposes the plurality of third light-emitting structures and the surface of the plurality of third light-emitting structures facing away from the first light-emitting structure constitute the second surface.

6. The light emitting chip according to claim 1, characterized in that: Part of the light-emitting layer is concave toward the first semiconductor layer, so that the first surface and the second surface of part of the light-emitting layer are both concave toward the first semiconductor layer, and part of the light-emitting layer is convex toward the second semiconductor layer, so that the first surface and the second surface of part of the light-emitting layer are both convex toward the second semiconductor layer.

7. The light-emitting chip according to any one of claims 1 to 6, characterized in that: The second semiconductor layer includes a first semiconductor element, a reflective element and a second semiconductor element which are stacked together. The surface of the reflective element facing the first semiconductor element is the reflective surface of the reflective element. At least a portion of the reflective surface convexes toward the side of the reflective element which is opposite to the first semiconductor element. The reflective surface is used to reflect the light emitted from the light-emitting layer to the second semiconductor layer to the substrate.

8. The light-emitting chip according to any one of claims 1 to 6, characterized in that: The light-emitting chip also includes a plurality of light-gathering elements, which are arranged in the substrate, and the orthographic projection of the light-emitting layer on the substrate is located within the orthographic projection of the plurality of light-gathering elements on the substrate, so that the light emitted by the light-emitting layer is directed toward the plurality of light-gathering elements, and the light-gathering elements are used to gather the light directed toward the light-gathering elements and then emit the light out of the light-gathering elements.

9. A display panel, characterized in that: It comprises a driving substrate and a plurality of light-emitting chips according to any one of claims 1 to 8, wherein the plurality of light-emitting chips are arranged on one side of the driving substrate and are electrically connected to the driving substrate.

10. A display device, characterized in that: It comprises a housing and the display panel as claimed in claim 9, wherein the display panel is arranged in the housing, and a light emitting side of the display panel is exposed from the housing.

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