An infrared polarized photodetector based on patterned ferroelectric domain modulation and a preparation method and application thereof

Abstract

The application belongs to the technical field of semiconductor photoelectric devices, and particularly relates to an infrared polarized photoelectric detector with patterned ferroelectric domain regulation and a preparation method and application thereof. The application provides an infrared polarized photoelectric detector with patterned ferroelectric domain regulation, which comprises, from bottom to top, an insulating substrate, a molybdenum ditelluride layer, a source electrode layer and a drain electrode layer, and a patterned polarized ferroelectric layer. The transition metal chalcogenide molybdenum ditelluride is a layered two-dimensional semiconductor material, and its lattice structure is isotropic. The device prepared based on the molybdenum ditelluride is generally used for photoelectric detection in the visible light band, and does not have polarization sensitivity. The infrared polarized photoelectric detector provided by the application is composed of the molybdenum ditelluride layer and the patterned polarized ferroelectric layer, and the patterned ferroelectric domain regulation is used, so that the detection band can be expanded by using the ferroelectric residual polarization electric field, the symmetry of the molybdenum ditelluride can be broken, and high-sensitivity polarized photoelectric detection from visible light to near-infrared light can be realized.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor optoelectronic device technology, specifically relating to an infrared polarization photodetector with patterned ferroelectric domain modulation, its fabrication method, and its application. Background Technology

[0002] Infrared polarization detection technology can expand the dimensions of target information by collecting polarization information, including degree of polarization, polarization angle, and phase difference. It has wide and important applications in both civilian and military fields, making it a cutting-edge detection technology with significant application value. Traditional polarization detection systems rely on polarization components for measurement, allowing only indirect detection of target polarization information. This results in low energy efficiency and a decreased signal-to-noise ratio, a key bottleneck restricting the practical application of polarization imaging technology.

[0003] Unlike traditional polarization detection techniques, polarization detection based on low-dimensional semiconductor materials does not rely on the filtering effect of polarization gratings, but rather on unique physical mechanisms inherent in low-dimensional semiconductors. These mechanisms include dichroism due to anisotropic lattice structures, localized optical fields modulated by metallic plasmons, and polarization-dependent self-emitting currents (bulk photovoltaic effect) generated in material systems with broken inversion symmetry. In existing technologies, heterojunction devices require consideration of bandgap matching, and their detection spectral range is limited by the material's bandgap; metallic plasmons can only achieve polarization detection in specific wavelengths, and their performance is constrained by process stability and reliability; in material systems with broken inversion symmetry, current research primarily focuses on the visible light band. Therefore, the detection spectral ranges of reported low-dimensional semiconductor polarization detectors are all limited. Summary of the Invention

[0004] The purpose of this invention is to provide a patterned ferroelectric domain-controlled infrared polarization photodetector, its preparation method, and its application. The patterned ferroelectric domain-controlled infrared polarization photodetector provided by this invention can achieve highly sensitive polarization photodetection in the visible to near-infrared bands.

[0005] To achieve the above objectives, the present invention provides the following technical solution:

[0006] The present invention provides an infrared polarization photodetector with patterned ferroelectric domain modulation, comprising, from bottom to top, an insulating substrate 1, a molybdenum ditelluride layer 2, a source and a drain layer, and a patterned partitioned polarized ferroelectric layer 5.

[0007] The molybdenum distelluride layer 2 has uncovered insulating substrate 1 on both sides;

[0008] The source and drain layers are disposed on the surface of the molybdenum ditelluride layer 2 and the insulating substrate 1 not covered by the molybdenum ditelluride layer 2; the source and drain layers include a source metal electrode 3 and a drain metal electrode 4; a channel is provided between the source metal electrode 3 and the drain metal electrode 4;

[0009] The patterned partitioned polarized ferroelectric layer 5 is disposed on the surface of the source and drain layers and the channel.

[0010] Preferably, the thickness of the molybdenum ditelluride layer 2 is 1–10 nm.

[0011] Preferably, the thickness of the source and drain layers is 20–100 nm;

[0012] The source metal electrode 3 and the drain metal electrode 4 are independently chromium-gold electrodes or graphene electrodes.

[0013] Preferably, the thickness of the patterned polarized ferroelectric layer 5 is 50–300 nm;

[0014] The composition of the patterned partitioned polarized ferroelectric layer 5 is a copolymer of vinylidene fluoride and trifluoroethylene.

[0015] Preferably, the partitioned polarization pattern of the patterned polarized ferroelectric layer 5 is a "T"-shaped array.

[0016] This invention also provides a method for fabricating an infrared polarization photodetector with patterned ferroelectric domain modulation as described in the above technical solution, comprising the following steps:

[0017] Molybdenum ditelluride is transferred to the surface of insulating substrate 1 to obtain molybdenum ditelluride layer 2; the two sides of the molybdenum ditelluride layer 2 are covered by the uncovered insulating substrate 1.

[0018] A source metal electrode 3 and a drain metal electrode 4 are fabricated on the surface of the molybdenum ditelluride layer 2 and the insulating substrate 1 not covered by the molybdenum ditelluride layer 2, to obtain a source and drain layer; a channel position is left between the source metal electrode 3 and the drain metal electrode 4.

[0019] A ferroelectric material solution is sequentially coated and annealed on the surfaces of the source and drain layers and the channel to obtain a ferroelectric layer.

[0020] The ferroelectric layer is patterned and polarized to obtain an infrared polarization photodetector controlled by the patterned ferroelectric domains.

[0021] Preferably, the source metal electrode 3 and the drain metal electrode 4 are prepared by a stripping process.

[0022] Preferably, the annealing temperature is 120–135°C and the time is 2–4 hours.

[0023] Preferably, the device for pattern partitioning polarization is a conductive probe.

[0024] The present invention also provides the application of the patterned ferroelectric domain-controlled infrared polarization photodetector described in the above technical solution or the patterned ferroelectric domain-controlled infrared polarization photodetector obtained by the preparation method described in the above technical solution in infrared polarization detection.

[0025] This invention provides an infrared polarization photodetector with patterned ferroelectric domain modulation, comprising, from bottom to top, an insulating substrate 1, a molybdenum ditelluride layer 2, source and drain layers, and a patterned polarized ferroelectric layer 5; the insulating substrate 1 is uncovered on both sides of the molybdenum ditelluride layer 2; the source and drain layers are disposed on the surfaces of the molybdenum ditelluride layer 2 and the uncovered insulating substrate 1; the source and drain layers include a source metal electrode 3 and a drain metal electrode 4; a channel is formed between the source metal electrode 3 and the drain metal electrode 4; the patterned polarized ferroelectric layer 5 is disposed on the surfaces of the source and drain layers and the channel. Molybdenum ditelluride, a transition metal dichalcogenide, is a two-dimensional semiconductor material with a layered structure and isotropic crystal lattice. Devices based on molybdenum ditelluride are generally used for photodetection in the visible light band and do not possess polarization sensitivity. The infrared polarization photodetector provided by this invention combines a molybdenum ditelluride layer with a patterned, partitioned polarized ferroelectric layer. By utilizing patterned ferroelectric domains for modulation, it not only extends the detection band using the residual polarization electric field of the ferroelectric domains but also breaks the inversion symmetry of the molybdenum ditelluride layer. The resulting patterned ferroelectric domain-modulated infrared polarization photodetector achieves high-sensitivity polarization photodetection in the visible to near-infrared bands based on the bulk photovoltaic effect. Furthermore, the detector possesses advantages such as simple structure, large-area fabrication capability, and stable performance. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 This is a frontal cross-sectional view of an infrared photodetector modulated by patterned ferroelectric domains. The upward and downward arrows in the figure represent the polarization direction of the ferroelectric domains in the patterned partitioned polarized ferroelectric layer.

[0028] Figure 2 A top view of a graphically ferroelectric domain-controlled infrared photodetector;

[0029] Figure 3This is a schematic diagram showing the relationship between the polarization detection ratio of the patterned ferroelectric domain-controlled molybdenum ditelluride photodetector obtained in Example 1 and the polarization angle of the incident light under 0 bias voltage.

[0030] Figure 4 This is a schematic diagram showing the polarization detection ratio of the patterned ferroelectric domain-controlled molybdenum ditelluride photodetector obtained in Example 1 as a function of bias voltage.

[0031] In the figure, 1 is the insulating substrate, 2 is the molybdenum ditelluride layer, 3 is the source metal electrode, 4 is the drain metal electrode, 5 is the patterned polarized ferroelectric layer, and 6 is the conductive probe. Detailed Implementation

[0032] The present invention provides an infrared polarization photodetector with patterned ferroelectric domain modulation, comprising, from bottom to top, an insulating substrate 1, a molybdenum ditelluride layer 2, a source and a drain layer, and a patterned partitioned polarized ferroelectric layer 5.

[0033] The molybdenum distelluride layer 2 has uncovered insulating substrate 1 on both sides;

[0034] The source and drain layers are disposed on the surface of the molybdenum ditelluride layer 2 and the insulating substrate 1 not covered by the molybdenum ditelluride layer 2; the source and drain layers include a source metal electrode 3 and a drain metal electrode 4; a channel is provided between the source metal electrode 3 and the drain metal electrode 4;

[0035] The patterned partitioned polarized ferroelectric layer 5 is disposed on the surface of the source and drain layers and the channel.

[0036] In this invention, unless otherwise specified, all raw material components are commercially available products well known to those skilled in the art.

[0037] In this invention, the insulating substrate 1 is preferably a silicon substrate or a sapphire substrate; the silicon substrate is preferably a silicon substrate with a silicon dioxide surface layer; the thickness of the silicon dioxide surface layer of the silicon substrate with the silicon dioxide surface layer is preferably 50-300 nm, more preferably 150-300 nm, and most preferably 285 nm.

[0038] In this invention, the thickness of the molybdenum ditelluride layer 2 is preferably 1-10 nm, more preferably 2-8 nm, and most preferably 4-7 nm.

[0039] In this invention, the source and drain layers are preferably 20–100 nm thick, more preferably 40–80 nm thick, and most preferably 50 nm thick; the source metal electrode 3 and the drain metal electrode 4 are independently preferably chromium-gold electrodes or graphene electrodes; the chromium thickness of the chromium-gold electrode is preferably 5–35 nm thick, more preferably 10–30 nm thick, and most preferably 15 nm thick; the gold thickness is preferably 15–65 nm thick, more preferably 20–40 nm thick, and most preferably 35 nm thick; the channel width of the source metal electrode 3 and the drain metal electrode 4 is preferably 1–10 μm, more preferably 2–8 μm thick, and most preferably 5 μm thick.

[0040] In this invention, the source and drain layers are made of the above-mentioned components to form an ohmic contact with the molybdenum ditelluride layer.

[0041] In this invention, the thickness of the patterned polarized ferroelectric layer 5 is preferably 50-300 nm, more preferably 50-200 nm, and most preferably 100-200 nm.

[0042] The preferred composition of the patterned polarized ferroelectric layer 5 is vinylidene fluoride-trifluoroethylene copolymer.

[0043] In this invention, the partitioned polarization pattern of the patterned polarized ferroelectric layer 5 is preferably a "T"-shaped array; the direction of the "T"-shaped array is preferably from the source metal electrode 3 to the drain metal electrode 4 or from the drain metal electrode 4 to the source metal electrode 3; for example Figure 2 As shown, in the "T"-shaped array, the short side length of the "T" shape is preferably 100-1000 nm, more preferably 300-800 nm, and most preferably 500 nm; the long side length is preferably 0.1-5 μm, more preferably 1-3 μm, and most preferably 1-2 μm; the arrangement spacing is preferably 100-1000 nm, more preferably 300-800 nm, and most preferably 500 nm; the arrangement quantity is preferably set according to the area of ​​the pattern partitioned polarized ferroelectric layer 5; the polarization direction of the "T"-shaped region is preferably from bottom to top, and the polarization direction outside the "T"-shaped region is preferably from top to bottom.

[0044] This invention provides an infrared polarization photodetector controlled by patterned ferroelectric domains. Molybdenum ditelluride (MoD), a transition metal dichalcogenide, is a two-dimensional semiconductor material with a layered structure and isotropic crystal lattice. Devices based on MoD are generally used for photodetection in the visible light band and lack polarization sensitivity. The infrared polarization photodetector provided by this invention combines a MoD layer with a patterned partitioned polarized ferroelectric layer. By controlling the patterned ferroelectric domains, it not only extends the detection band using the residual polarization electric field of the ferroelectric domains but also breaks the inversion symmetry of MoD. The resulting infrared polarization photodetector controlled by patterned ferroelectric domains achieves high-sensitivity polarization photodetection in the visible to near-infrared bands based on the bulk photovoltaic effect. Furthermore, the detector also possesses advantages such as simple structure, large-area fabrication capability, and stable performance.

[0045] This invention also provides a method for fabricating an infrared polarization photodetector with patterned ferroelectric domain modulation as described in the above technical solution, comprising the following steps:

[0046] Molybdenum ditelluride is transferred to the surface of insulating substrate 1 to obtain molybdenum ditelluride layer 2; the two sides of the molybdenum ditelluride layer 2 are covered by the uncovered insulating substrate 1.

[0047] A source metal electrode 3 and a drain metal electrode 4 are fabricated on the surface of the molybdenum ditelluride layer 2 and the insulating substrate 1 not covered by the molybdenum ditelluride layer 2, to obtain a source and drain layer; a channel position is left between the source metal electrode 3 and the drain metal electrode 4.

[0048] A ferroelectric material solution is sequentially coated and annealed on the surfaces of the source and drain layers and the channel to obtain a ferroelectric layer.

[0049] The ferroelectric layer is patterned and polarized to obtain an infrared polarization photodetector controlled by the patterned ferroelectric domains.

[0050] In this invention, molybdenum ditelluride is transferred to the surface of an insulating substrate 1 to obtain a molybdenum ditelluride layer 2; the molybdenum ditelluride layer 2 has uncovered insulating substrate 1 on both sides.

[0051] In this invention, the transfer method is preferably mechanical peeling transfer; the mechanical peeling transfer is preferably performed using adhesive tape.

[0052] After obtaining the molybdenum ditelluride layer 2, the present invention prepares a source metal electrode 3 and a drain metal electrode 4 on the surface of the molybdenum ditelluride layer 2 and the insulating substrate 1 not covered by the molybdenum ditelluride layer 2, thereby obtaining a source electrode and a drain electrode layer; there is a channel position between the source metal electrode 3 and the drain metal electrode 4.

[0053] In this invention, the preferred method for preparing the source metal electrode 3 and the drain metal electrode 4 is a lift-off process. The lift-off process preferably includes sequentially preparing a photoresist layer, electron beam exposure, removing the photoresist at the electrode location, depositing electrode material, and removing the photoresist layer and metal film. When the source metal electrode 3 or the drain metal electrode 4 is a chromium-gold electrode, the preferred method for depositing the electrode material is thermal evaporation deposition. The preferred chromium deposition rate for thermal evaporation deposition is 0.005–0.02 nm / s, more preferably 0.01–0.02 nm / s, and most preferably 0.01 nm / s; the preferred gold deposition rate is 0.01–0.05 nm / s, more preferably 0.02–0.04 nm / s, and most preferably 0.03 nm / s. This invention does not impose any other special limitations on the thermal evaporation deposition process; any method well-known to those skilled in the art can be used to achieve the above specifications for the chromium-gold electrode. This invention does not impose any special limitations on the processes of preparing the photoresist layer, electron beam exposure, removing the photoresist at the electrode location, and removing the photoresist layer and metal film; any method well-known to those skilled in the art can be used.

[0054] In this invention, the electron beam exposure is used to prepare the patterns of the source metal electrode and the drain metal electrode.

[0055] After obtaining the source and drain layers, the present invention sequentially coats and anneals the ferroelectric material solution on the surface of the source and drain layers and the channel to obtain the ferroelectric layer.

[0056] In this invention, the ferroelectric material solution is preferably a vinylidene fluoride-trifluoroethylene copolymer solution; the concentration of the vinylidene fluoride-trifluoroethylene copolymer in the solution is preferably 2-3 mol / L, more preferably 2.2-2.8 mol / L, and most preferably 2.5 mol / L; the solvent is preferably diethyl carbonate.

[0057] In this invention, the coating method is preferably spin coating; the number of coating passes is preferably 1 to 4 times, more preferably 1 to 3 times; this invention does not impose any other special limitations on the coating process, and any method known to those skilled in the art can be used to make the ferroelectric layer within the range described above.

[0058] In this invention, the annealing temperature is preferably 120-135°C, more preferably 125-130°C, and most preferably 130°C; the annealing time is preferably 2-4 hours, more preferably 2-3 hours.

[0059] In this invention, the annealing process serves to ensure the high crystallinity of the ferroelectric layer.

[0060] After obtaining the ferroelectric layer, the present invention performs patterned partitioning polarization on the ferroelectric layer to obtain an infrared polarization photodetector controlled by the patterned ferroelectric domains.

[0061] In this invention, the pattern of the patterned polarization is preferably the "T"-shaped array described above; the method of patterned polarization is preferably to apply positive and negative charges according to the polarization direction described above; the device for patterned polarization is preferably a conductive probe; the conductive probe is preferably an atomic force microscope conductive probe; the diameter of the conductive probe is preferably 10-30 nm, more preferably 15-25 nm, and most preferably 20 nm; the surface of the conductive probe is preferably a titanium-iridium alloy coating.

[0062] This invention provides a fabrication method that combines the advantages of piezoelectric microscopy, ferroelectric materials, and low-dimensional semiconductor materials. It proposes a method for developing a high-polarization-sensitivity infrared polarization photodetector based on patterned ferroelectric domain modulation of the low-dimensional semiconductor band. After patterned ferroelectric domain modulation, molybdenum ditelluride, which originally lacked polarization sensitivity, achieves polarization light detection, extending the detection band from visible light to the near-infrared band. Regarding polarization detection performance, the patterned ferroelectric domain-modulated molybdenum ditelluride device exhibits a polarization detectivity exceeding 300 under low bias voltage, and tends towards ±∞ under specific bias voltages, demonstrating excellent polarization photodetection capabilities.

[0063] The present invention also provides the application of the patterned ferroelectric domain-controlled infrared polarization photodetector described in the above technical solution or the patterned ferroelectric domain-controlled infrared polarization photodetector obtained by the preparation method described in the above technical solution in infrared polarization detection.

[0064] The present invention does not impose any special limitations on the application process of the patterned ferroelectric domain-controlled infrared polarization photodetector in infrared polarization detection; any method known to those skilled in the art can be used.

[0065] To further illustrate the present invention, the following detailed description, in conjunction with the accompanying drawings and embodiments, describes the patterned ferroelectric domain-controlled infrared polarization photodetector, its fabrication method, and its applications. However, these descriptions should not be construed as limiting the scope of protection of the present invention.

[0066] Example 1

[0067] The front cross-sectional view and top view of the graphical ferroelectric domain modulated infrared photodetector provided in this embodiment are as follows: Figure 1 and Figure 2 As shown.

[0068] like Figure 1 As shown, 1 is an insulating substrate, 2 is a molybdenum ditelluride layer, 3 is a source metal electrode, 4 is a drain metal electrode, 5 is a patterned polarized ferroelectric layer, and 6 is a conductive probe. The upward and downward arrows represent the polarization direction of the ferroelectric domains in the patterned polarized ferroelectric layer.

[0069] like Figure 2 As shown, 3 is the source metal electrode, 4 is the drain metal electrode, and 5 is the patterned polarized ferroelectric layer. The polarized pattern is a "T"-shaped array from the drain metal electrode 4 to the source metal electrode 3.

[0070] The preparation method includes the following steps:

[0071] Fabrication of insulating substrate 1: A silicon substrate with 285nm silicon dioxide on its surface is used.

[0072] Preparation of molybdenum ditelluride layer 2: The transition metal chalcogenide molybdenum ditelluride crystal was mechanically peeled off with tape and then transferred to a silicon substrate with 285nm silicon dioxide on the surface. The thickness of molybdenum ditelluride was 5nm.

[0073] Fabrication of source and drain layers: After photoresist coating, the patterns of source metal electrode 3 and drain metal electrode 4 are prepared using electron beam lithography. After development, the photoresist at the source and drain electrode locations is removed, and then the metal electrodes are prepared using thermal evaporation. First, 15 nm of chromium is deposited at a rate of 0.01 nm / s, followed by 35 nm of gold at a rate of 0.03 nm / s. Combined with a lift-off method, the photoresist layer and the metal film are peeled off to obtain source metal electrode 3 and drain metal electrode 4, with a channel width of 5 μm.

[0074] Preparation of the ferroelectric layer: The binary polymer vinylidene fluoride-trifluoroethylene copolymer P(VDF-TrFE) was dissolved in diethyl carbonate at a concentration of 2.5 mol / L. Then, the P(VDF-TrFE) ferroelectric layer was prepared by spin coating twice. The P(VDF-TrFE) film was annealed at 130℃ in an oven for 2 hours to ensure the crystallinity of the P(VDF-TrFE) film. The thickness of the P(VDF-TrFE) ferroelectric film was 100 nm.

[0075] Fabrication of the patterned partitioned polarized ferroelectric layer 5: The partitioned polarization pattern is set as a "T"-shaped array from the drain metal electrode to the source metal electrode. The short side of the "T" is 500 nm long, the long side is 1 μm long, and the spacing between the arrays is 500 nm. The device is placed on the atomic force microscope stage, and in piezoelectric microscopy mode, +15 volts and -15 volts are applied to the ferroelectric layer according to the designed pattern using the conductive probe 6 to obtain the patterned partitioned polarized ferroelectric layer 5.

[0076] Test case

[0077] The prepared device was placed in a probe station. The source metal electrode 3 and drain metal electrode 4 of the sample were connected to the two ends of an ammeter, respectively. The laser beam was placed on the device channel through an optical path. The polarization angle of the incident light was changed by rotating a half-wave plate, and the relationship between the polarization angle of the incident light and the photocurrent was tested. A constant voltage of 0 volts was applied between the source and drain electrodes, and the channel current was detected as a function of the polarization angle of the incident light. A schematic diagram showing the relationship between the polarization detectivity of the graphed ferroelectric domain-controlled molybdenum ditelluride photodetector under 0 bias voltage and the polarization angle of the incident light is shown below. Figure 3 A schematic diagram showing the relationship between polarization probe ratio and bias voltage is shown below. Figure 4 .

[0078] Depend on Figure 3 It can be seen that under laser irradiation at a wavelength of 1550nm, with a small bias voltage value, the device has a polarization detection ratio of over 300.

[0079] Depend on Figure 4 It can be seen that when a voltage of -50 to -25 volts is applied between the source and drain electrodes, the polarization detection ratio tends to ±∞ under a specific bias voltage, demonstrating excellent polarization photoelectric detection capability.

[0080] As can be seen from the above embodiments, in the patterned ferroelectric domain-controlled infrared polarization photodetector provided by the present invention, molybdenum ditelluride, a transition metal dichalcogenide, is a two-dimensional semiconductor material with a layered structure and an isotropic crystal lattice. Devices based on molybdenum ditelluride are generally used for photodetection in the visible light band and do not possess polarization sensitivity. The infrared polarization photodetector provided by the present invention combines a molybdenum ditelluride layer with a patterned partitioned polarized ferroelectric layer. By utilizing patterned ferroelectric domain control, it can not only extend its detection band using the residual polarization electric field of ferroelectricity, but also break the inversion symmetry of molybdenum ditelluride using patterned ferroelectric domains. The resulting patterned ferroelectric domain-controlled infrared polarization photodetector achieves high-sensitivity polarization photodetection in the visible to near-infrared bands based on the bulk photovoltaic effect. Simultaneously, the detector also has advantages such as simple structure, large-area fabrication capability, and stable performance.

[0081] This invention provides a fabrication method that combines the advantages of piezoelectric microscopy, ferroelectric materials, and low-dimensional semiconductor materials. It proposes a method for developing a high-polarization-sensitivity infrared polarization photodetector based on patterned ferroelectric domain modulation of the low-dimensional semiconductor band. After patterned ferroelectric domain modulation, molybdenum ditelluride, which originally lacked polarization sensitivity, achieves polarization light detection, extending the detection band from visible light to the near-infrared band. Regarding polarization detection performance, the patterned ferroelectric domain-modulated molybdenum ditelluride device exhibits a polarization detectivity exceeding 300 under low bias voltage, and tends towards ±∞ under specific bias voltages, demonstrating excellent polarization photodetection capabilities.

[0082] Although the above embodiments have provided a detailed description of the present invention, they are only some embodiments of the present invention, and not all embodiments. Other embodiments can be obtained based on these embodiments without creative effort, and these embodiments all fall within the protection scope of the present invention.

Claims

1. A patterned ferroelectric domain-controlled infrared polarization photodetector, characterized in that, It includes, from bottom to top, an insulating substrate (1), a molybdenum ditelluride layer (2), a source and drain layer, and a patterned polarized ferroelectric layer (5); The molybdenum distelluride layer (2) has uncovered insulating substrates (1) on both sides; The source and drain layers are disposed on the surface of the molybdenum ditelluride layer (2) and the insulating substrate (1) not covered by the molybdenum ditelluride layer (2); the source and drain layers include a source metal electrode (3) and a drain metal electrode (4); a channel is provided between the source metal electrode (3) and the drain metal electrode (4); The patterned partitioned polarized ferroelectric layer (5) is disposed on the surface of the source and drain layers and the channel location; The thickness of the molybdenum distellide layer (2) is 1~10 nm; The thickness of the source and drain layers is 20~100nm; the source metal electrode (3) and the drain metal electrode (4) are independently chromium-gold electrodes or graphene electrodes; The thickness of the patterned polarized ferroelectric layer (5) is 50~300nm; the composition of the patterned polarized ferroelectric layer (5) is vinylidene fluoride-trifluoroethylene copolymer. The partitioned polarization pattern of the patterned polarized ferroelectric layer (5) is a "T" shaped array.

2. The method for fabricating the patterned ferroelectric domain-controlled infrared polarization photodetector according to claim 1, characterized in that, Includes the following steps: Molybdenum ditelluride is transferred to the surface of an insulating substrate (1) to obtain a molybdenum ditelluride layer (2); the molybdenum ditelluride layer (2) has uncovered insulating substrate (1) on both sides; A source metal electrode (3) and a drain metal electrode (4) are prepared on the surface of the molybdenum ditelluride layer (2) and the insulating substrate (1) not covered by the molybdenum ditelluride layer (2) to obtain a source and drain layer; a channel position is left between the source metal electrode (3) and the drain metal electrode (4); A ferroelectric material solution is sequentially coated and annealed on the surfaces of the source and drain layers and the channel to obtain a ferroelectric layer. The ferroelectric layer is patterned and polarized to obtain an infrared polarization photodetector controlled by the patterned ferroelectric domains.

3. The preparation method according to claim 2, characterized in that, The source metal electrode (3) and the drain metal electrode (4) are prepared by a stripping process.

4. The preparation method according to claim 2, characterized in that, The annealing temperature is 120~135℃, and the time is 2~4h.

5. The preparation method according to claim 2, characterized in that, The device for pattern partitioning polarization is a conductive probe.

6. The application of the patterned ferroelectric domain-controlled infrared polarization photodetector according to claim 1 or the patterned ferroelectric domain-controlled infrared polarization photodetector obtained by the preparation method according to any one of claims 2 to 5 in infrared polarization detection.

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