Vacuum cleaning device and substrate cleaning method

Abstract

The application discloses a vacuum cleaning device and a substrate cleaning method. The device comprises an electromagnetic mechanism, a vacuum cleaning cavity, a hollow spindle, a lifting mechanism and a base table. The electromagnetic mechanism is sealingly arranged on the top of the vacuum cleaning cavity and is externally connected with a radio frequency power supply to excite process gas to form plasma to clean the surface of a substrate. The movable end and the driving end of the lifting mechanism are sealingly arranged inside and outside the vacuum cleaning cavity respectively. The base table is arranged inside the vacuum cleaning cavity and is connected with the hollow spindle at the bottom. The hollow spindle is sealingly penetrated through the bottom of the vacuum cleaning cavity. Inside the vacuum cleaning cavity, the lifting mechanism is located above the base table to realize mutual transfer of the substrate between a mechanical hand and the base table. The side of the vacuum cleaning cavity is provided with an air outlet, an air inlet device and a mechanical hand inlet. Process gas enters and exits the vacuum cleaning cavity through the air inlet device and the air outlet, and the substrate is transferred in or out through the mechanical hand inlet. The application has the advantages of compact structure, simple operation, remarkable cleaning effect, high compatibility and the like.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor vacuum cleaning equipment technology, specifically relating to a vacuum cleaning device and a substrate cleaning method. Background Technology

[0002] As integrated circuit manufacturing processes become increasingly advanced, new requirements are being placed on several stages of actual manufacturing, highlighting the growing importance of the cleaning process. The criticality of cleaning stems from the fact that as feature sizes continue to shrink, semiconductors become increasingly sensitive to impurities, and semiconductor manufacturing inevitably introduces contaminants such as particles, organic matter, metals, and oxides. To reduce the impact of impurities on chip yield, actual production requires not only improving the efficiency of a single cleaning cycle but also frequent cleaning before and after almost all processes. Therefore, vacuum cleaning equipment is a common piece of semiconductor equipment, typically used for cleaning wafers or substrates before processes such as coating, epitaxy, and exposure, removing contaminants such as particles, organic matter, metals, and oxides from their surfaces. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to provide a vacuum cleaning device and substrate cleaning method that are compact, simple to operate, have significant cleaning effect and high compatibility, addressing the problems of incomplete and inadequate cleaning in the existing technology.

[0004] To solve the above-mentioned technical problems, the present invention adopts the following technical solution:

[0005] A vacuum cleaning device includes: an electromagnetic mechanism, a vacuum cleaning chamber, a hollow spindle, a lifting mechanism, and a base platform. The electromagnetic mechanism is sealed at the top of the vacuum cleaning chamber and is externally connected to a radio frequency power supply to ionize the process gas inside the vacuum cleaning chamber to form plasma for cleaning the substrate surface. The movable end of the lifting mechanism is located inside the vacuum cleaning chamber, and the driving end is located outside the vacuum cleaning chamber. The connection between the lifting mechanism and the vacuum cleaning chamber is sealed. The base platform is located inside the vacuum cleaning chamber, and its bottom is connected to the hollow spindle, which extends through the bottom of the vacuum cleaning chamber. The connection between the hollow spindle and the vacuum cleaning chamber is sealed. Inside the vacuum cleaning chamber, the lifting mechanism is located above the base platform to facilitate the transfer of the substrate between the robot and the base platform. The side of the vacuum cleaning chamber is provided with an exhaust port, an intake device, and a robot inlet. The process gas used for cleaning the substrate enters and exits the vacuum cleaning chamber through the intake device and the exhaust port. The robot enters or exits the vacuum cleaning chamber through the robot inlet.

[0006] As a further improvement of the present invention, a substrate clamp is also included. The movable end of the substrate clamp is disposed inside the vacuum cleaning chamber, and the driving end of the substrate clamp is disposed outside the vacuum cleaning chamber. Inside the vacuum cleaning chamber, the substrate clamp is located above the lifting mechanism. The substrate clamp is used to hold the substrate and drive the substrate to lift and rotate, so as to realize double-sided cleaning of the substrate in the vacuum cleaning chamber.

[0007] As a further improvement of the present invention, the inner wall of the vacuum cleaning chamber is provided with an annular partition and an annular heater; when the vacuum cleaning chamber is self-cleaning, the annular partition is used to connect to the radio frequency power supply; the annular heater is vertically distributed around the base platform and is located between the inner wall of the vacuum cleaning chamber and the base platform, and the annular heater is used to heat the inside of the vacuum cleaning chamber, the base platform and the process gas introduced into the vacuum cleaning chamber.

[0008] As a further improvement of the present invention, the air outlet and the robot arm inlet are respectively arranged on the opposite side walls of the vacuum cleaning chamber, and the air intake device is symmetrically distributed on both sides of the robot arm inlet; the air intake device includes an air intake pipe and an airflow controller connected to each other, the air intake pipe interface of the airflow controller is provided with a second rotary motor, the second rotary motor is used to drive the air intake pipe interface to rotate, the air outlet of the airflow controller is provided with a baffle plate and a first rotary motor, the first rotary motor drives the baffle plate to rotate, so as to change the air intake direction and airflow size in the vacuum cleaning chamber.

[0009] As a further improvement of the present invention, the lifting mechanism includes a bearing ring, a drive motor and a first bellows; the drive motor is disposed outside the vacuum cleaning chamber, the bearing ring is disposed inside the vacuum cleaning chamber, the output end of the drive motor is connected to the bearing ring through a transmission shaft, and the outer side of the transmission shaft is sealed to the vacuum cleaning chamber through the first bellows.

[0010] As a further improvement of the present invention, the bearing ring is provided with a contact arc, which is an inclined surface for supporting the substrate. Two matching grooves are symmetrically provided at one end of the bearing ring, and a limiting arc is provided at the other end of the bearing ring. The matching grooves and the limiting arc are used for the transfer and positioning of the substrate.

[0011] As a further improvement of the present invention, the hollow spindle is provided with an air inlet pipe, an air outlet pipe, a water inlet pipe, and a water outlet pipe inside; the base platform includes a cooling plate, a second corrugated pipe, a heating plate, and a substrate platform; the bottom of the cooling plate is connected to the hollow spindle, and the water inlet and outlet of the cooling plate are respectively connected to the water inlet pipe and the water outlet pipe; the second corrugated pipe is sleeved on the outer periphery of the hollow spindle to achieve a sealed connection between the hollow spindle and the base platform and the vacuum cleaning chamber; the heating plate is set on the top of the cooling plate, and the substrate platform is set on the top of the heating plate; the substrate platform is provided with a gas groove and multiple back argon gas holes; the inlet and outlet of the gas groove are respectively connected to the air inlet pipe and the air outlet pipe to achieve the entry and exit of inert back argon gas into and out of the substrate platform; when cleaning the substrate, the bearing ring of the substrate rests on the substrate platform, and a space for storing inert back argon gas is formed between the middle of the substrate and the upper surface of the substrate platform; the substrate is heated by the heating plate to achieve uniform heating of the substrate.

[0012] As a further improvement of the present invention, the substrate clamp includes an arc-shaped support plate, an electric spring, and a rotating shaft; the electric spring is disposed inside the arc-shaped support plate to clamp both sides of the substrate; one end of the rotating shaft is connected to the arc-shaped support plate, and the other end of the rotating shaft is sealed through the side wall of the vacuum cleaning chamber and connected to an external drive mechanism; under the drive of the drive mechanism, the rotating shaft drives the arc-shaped support plate to rise and fall and rotate 90° in the vacuum cleaning chamber to achieve double-sided cleaning of the substrate.

[0013] As a further improvement of the present invention, the electromagnetic mechanism includes: a shield, an electromagnetic field device, and a magnetic field detector. The bottom of the shield is sealed to the top of the vacuum cleaning chamber. The electromagnetic field device and the magnetic field detector are both installed inside the shield. The electromagnetic field device consists of two symmetrical electromagnet groups. The direction and intensity of the magnetic field in the vacuum cleaning chamber are adjusted by the control of an external radio frequency power supply, and the magnetic field intensity in the vacuum cleaning chamber is monitored in real time by the magnetic field detector.

[0014] As a general technical concept, the present invention also provides a substrate cleaning method based on the above-mentioned vacuum cleaning apparatus, comprising the following steps:

[0015] Step S1: Before starting the substrate cleaning process, first balance the pressure between the vacuum cleaning chamber and the transfer chamber, then open the valve at the robot arm inlet, and the robot arm sends the substrate into the vacuum cleaning chamber.

[0016] Step S2: Drive the motor to drive the support ring to rise, move the substrate above the robot arm, and then the robot arm exits the vacuum cleaning chamber and closes the valve at the robot arm inlet;

[0017] Step S3: Drive the motor to lower the support ring, and the bottom of the support ring and the top of the substrate stage will cooperate to form a whole;

[0018] Step S4: Determine the temperature and back argon size for the cleaning process, and adjust the temperature of the heating plate and the gas flow rate of the back argon vents accordingly.

[0019] Step S5: Adjust the air pressure in the vacuum cleaning chamber through the airflow controller to balance the inlet and outlet air, ensuring that the gas in the vacuum cleaning chamber is constantly renewed while the power is on, so as to remove impurities generated during substrate cleaning.

[0020] Step S6: Connect the radio frequency power supply into the vacuum cleaning chamber through the electromagnetic field device to excite the process gas to ionize and form plasma to clean the upper surface of the substrate.

[0021] Step S7: After the cleaning process is completed, first balance the vacuum level between the vacuum cleaning chamber and the transfer chamber, then open the valve at the robot arm inlet, and transfer the substrate from the base platform to the transfer chamber through the cooperation of the lifting mechanism and the robot arm, and then transfer it to the unloading chamber for the next process.

[0022] Step S8: Close the valve at the robot arm inlet, connect the RF power supply to the annular partition inside the vacuum cleaning chamber, and perform self-cleaning of the vacuum cleaning chamber to remove contaminants remaining from the substrate cleaning process.

[0023] As a further improvement of the present invention, when the substrate needs to be cleaned on both sides, the robot arm sends the substrate into the vacuum cleaning chamber, and then the substrate is clamped and lifted by the substrate clamp and rotated 90° to be placed vertically. Then the direction of the electromagnetic field is adjusted, and the two electromagnet groups of the electromagnetic field device are respectively aligned with the two surfaces of the substrate. The required temperature in the vacuum cleaning chamber is adjusted by the ring heater. Then the radio frequency power supply is switched to the electromagnetic field device, and the two surfaces of the substrate are cleaned by plasma. After the substrate cleaning is completed, the vacuum cleaning chamber is self-cleaned.

[0024] Compared with the prior art, the advantages of the present invention are as follows:

[0025] 1. The vacuum cleaning device of the present invention comprises an electromagnetic mechanism, a vacuum cleaning chamber, a hollow main shaft, a lifting mechanism, and a base platform, forming the main structure of the vacuum cleaning device. Specifically, the vacuum cleaning chamber has an outlet, an inlet, and a robotic arm inlet on its side. The process gas used to clean the substrate enters and exits the vacuum cleaning chamber through the inlet and outlet. The robotic arm, in conjunction with the robotic arm inlet, enables the automatic transfer of the substrate into or out of the vacuum cleaning chamber. The electromagnetic mechanism is sealed at the top of the vacuum cleaning chamber and is externally connected to a radio frequency power supply. The radio frequency power supply ionizes the process gas inside the vacuum cleaning chamber to form plasma, which cleans the substrate surface. This design improves the cleaning quality of the substrate without causing secondary contamination. By sealing the movable end of the lifting mechanism inside the vacuum cleaning chamber and placing the drive end outside, the design allows the lifting mechanism to move the substrate within the vacuum cleaning chamber without causing contamination, ensuring the cleanliness of the chamber. Furthermore, by placing the base platform inside the vacuum cleaning chamber, with its bottom connected to a hollow main shaft that extends through the bottom of the chamber, the base platform is fixed within the chamber and provides support for the substrate, improving the reliability of the substrate connection.

[0026] 2. The vacuum cleaning apparatus of the present invention, by setting a substrate clamp, uses the substrate clamp to drive the substrate to move up, down, and rotate within the vacuum cleaning chamber, thus enabling the vacuum cleaning apparatus to have a dual cleaning function. This achieves double-sided cleaning of the substrate within the vacuum cleaning chamber, greatly improving the cleaning effect on the substrate surface and reducing the impact of impurities on the substrate and the vacuum cleaning chamber. Simultaneously, by providing an annular partition on the inner wall of the vacuum cleaning chamber, and connecting the annular partition to an radio frequency power supply, a self-cleaning function of the vacuum cleaning chamber is achieved, further reducing the impact of the chamber's own contamination on the substrate and improving the cleaning quality of the substrate.

[0027] 3. The substrate cleaning method of the present invention first balances the pressure between the vacuum cleaning chamber and the transfer chamber, and then the substrate is transferred into the vacuum cleaning chamber by a robotic arm. Then, the substrate is transferred from the robotic arm to the top of the substrate stage by a lifting mechanism, and the process environment in the vacuum cleaning chamber is adjusted according to the preset cleaning process. The radio frequency power supply is connected to the vacuum cleaning chamber through an electromagnetic field device to excite the process gas to ionize and form plasma, which can clean the upper surface of the substrate. If the substrate needs to be cleaned on both sides, the substrate can be lifted and rotated by the substrate clamp, and the direction of the electromagnetic field can be adjusted at the same time. The plasma is used to clean the two surfaces of the substrate, realizing high-efficiency and high-quality cleaning of the substrate. After the substrate cleaning process is completed, the radio frequency power supply is connected to the annular partition in the vacuum cleaning chamber to excite the process gas to form plasma, which performs self-cleaning of the vacuum cleaning chamber to remove contaminants remaining from the substrate cleaning process, further reducing the impact of the chamber's own contamination on the substrate. Attached Figure Description

[0028] Figure 1 This is a schematic diagram illustrating the structural principle of the vacuum cleaning device in a specific embodiment of the present invention.

[0029] Figure 2 This is a schematic diagram of the structural principle of the vacuum cleaning device after the electromagnetic mechanism has been removed in a specific embodiment of the present invention.

[0030] Figure 3 This is a schematic diagram of the structural principle of the electromagnetic mechanism in a specific embodiment of the present invention.

[0031] Figure 4 This is a schematic diagram illustrating the structural principle of the vacuum cleaning chamber in a specific embodiment of the present invention.

[0032] Figure 5 This is a schematic diagram of the structural principle of the airflow control component in a specific embodiment of the present invention.

[0033] Figure 6 This is a schematic diagram illustrating the structural principle of the hollow spindle in a specific embodiment of the present invention.

[0034] Figure 7 This is a schematic diagram of the structural principle of the lifting mechanism in a specific embodiment of the present invention.

[0035] Figure 8 This is a schematic diagram of the structural principle of the bearing ring in a specific embodiment of the present invention.

[0036] Figure 9 This is a schematic diagram of the partial structural principle of the bearing ring in a specific embodiment of the present invention.

[0037] Figure 10 This is a schematic diagram of the structural principle of the base platform in a specific embodiment of the present invention.

[0038] Figure 11 This is a schematic diagram illustrating the structural principle of the substrate clamp in a specific embodiment of the present invention.

[0039] Figure 12 This is a schematic diagram of the substrate cleaning process in a specific embodiment of the present invention.

[0040] Legend: 1. Electromagnetic mechanism; 2. Vacuum cleaning chamber; 3. Hollow spindle; 4. Lifting mechanism; 5. Base platform; 6. Substrate clamp; 11. Shielding cover; 12. Electromagnetic field device; 13. Magnetic field detector; 21. Air outlet; 22. Air inlet device; 221. Baffle plate; 222. First rotary motor; 223. Airflow controller; 224. Second rotary motor; 23. Robotic arm entrance; 24. Sealing ring; 25. Ring 26. Shaped partition; 31. Annular heater; 32. Air inlet pipe; 33. Air outlet pipe; 34. Water inlet pipe; 45. Water outlet pipe; 46. Bearing ring; 47. Drive motor; 48. First corrugated pipe; 49. Contact arc; 40. Matching groove; 41. Limiting arc; 52. Back argon gas hole; 53. Cooling plate; 54. Second corrugated pipe; 55. Heating plate; 66. Substrate stage; 67. Arc-shaped support plate; 68. Electric spring; 69. Rotating shaft. Detailed Implementation

[0041] The present invention will be further described below with reference to the accompanying drawings and specific preferred embodiments, but this does not limit the scope of protection of the present invention.

[0042] Example 1

[0043] like Figures 1 to 11 As shown, the vacuum cleaning apparatus of the present invention includes: an electromagnetic mechanism 1, a vacuum cleaning chamber 2, a hollow spindle 3, a lifting mechanism 4, and a base platform 5. The electromagnetic mechanism 1 is sealed at the top of the vacuum cleaning chamber 2. The electromagnetic mechanism 1 is externally connected to a radio frequency power supply to ionize the process gas inside the vacuum cleaning chamber 2, forming plasma to clean the substrate surface. The movable end of the lifting mechanism 4 is located inside the vacuum cleaning chamber 2, and the driving end of the lifting mechanism 4 is located outside the vacuum cleaning chamber 2. The connection between the lifting mechanism 4 and the vacuum cleaning chamber 2 is sealed. The base platform 5 is located inside the vacuum cleaning chamber 2. The bottom of the base platform 5 is connected to the hollow spindle 3, which extends through the bottom of the vacuum cleaning chamber 2. The connection between the hollow spindle 3 and the vacuum cleaning chamber 2 is sealed. Inside the vacuum cleaning chamber 2, the lifting mechanism 4 is positioned above the base platform 5 to facilitate the transfer of the substrate between the robotic arm and the base platform 5. The vacuum cleaning chamber 2 is provided with an air outlet 21, an air inlet device 22, and a robot arm inlet 23 on its side. The process gas used to clean the substrate enters and exits the vacuum cleaning chamber 2 through the air inlet device 22 and the air outlet 21. The robot arm realizes the transfer of the substrate into or out of the vacuum cleaning chamber 2 through the robot arm inlet 23.

[0044] In this embodiment, the main structure of the vacuum cleaning device consists of an electromagnetic mechanism 1, a vacuum cleaning chamber 2, a hollow spindle 3, a lifting mechanism 4, and a base platform 5. Specifically, the vacuum cleaning chamber 2 has an exhaust port 21, an intake device 22, and a robotic arm inlet 23 on its side. The process gas used to clean the substrate enters and exits the vacuum cleaning chamber 2 through the intake device 22 and the exhaust port 21. The robotic arm, in cooperation with the robotic arm inlet 23, enables the automatic transfer of the substrate into or out of the vacuum cleaning chamber. The electromagnetic mechanism 1 is sealed at the top of the vacuum cleaning chamber 2. The electromagnetic mechanism 1 is connected to an external radio frequency power supply. The radio frequency power supply is used to ionize the process gas inside the vacuum cleaning chamber 2 to form plasma, which cleans the surface of the substrate. This improves the cleaning quality of the substrate without causing secondary contamination. By sealing the movable end of the lifting mechanism 4 inside the vacuum cleaning chamber 2 and setting the drive end of the lifting mechanism 4 outside the vacuum cleaning chamber 2, the lifting mechanism 4 can move the substrate inside the vacuum cleaning chamber 2 without causing contamination inside the vacuum cleaning chamber 2, thus ensuring the cleanliness of the vacuum cleaning chamber 2. By setting the base platform 5 inside the vacuum cleaning chamber 2, with the bottom of the base platform 5 connected to the hollow main shaft 3 and the hollow main shaft 3 penetrating through the bottom of the vacuum cleaning chamber 2, the base platform 5 can be installed and fixed inside the vacuum cleaning chamber 2, and the base platform 5 can be used to support the substrate, thus improving the connection reliability of the substrate.

[0045] like Figure 2 As shown, this embodiment also includes a substrate clamp 6. The movable end of the substrate clamp 6 is disposed inside the vacuum cleaning chamber 2, and the driving end of the substrate clamp 6 is disposed outside the vacuum cleaning chamber 2. Inside the vacuum cleaning chamber 2, the substrate clamp 6 is located above the movable end of the lifting mechanism 4. The substrate clamp 6 is used to hold the substrate and drive the substrate to lift and rotate, so as to realize double-sided cleaning of the substrate in the vacuum cleaning chamber 2.

[0046] In this embodiment, by setting up a substrate clamp 6, the substrate is driven to move up and down and rotate within the vacuum cleaning chamber 2, thereby enabling the vacuum cleaning device to have a dual cleaning function. This allows the substrate to be cleaned on both sides within the vacuum cleaning chamber, greatly improving the cleaning effect on the substrate surface and reducing the impact of impurities on the substrate and the vacuum cleaning chamber.

[0047] like Figure 4 and Figure 5As shown, in this embodiment, the inner wall of the vacuum cleaning chamber 2 is provided with an annular partition 25 and an annular heater 26. When the vacuum cleaning chamber 2 performs self-cleaning, the annular partition 25 is used to connect to the radio frequency power supply, realizing the self-cleaning function of the vacuum cleaning chamber, further reducing the impact of the chamber's own contamination on the substrate, and improving the cleaning quality of the substrate. The annular heater 26 consists of three layers of heating tubes. The annular heater 26 is vertically distributed around the base platform 5 and is located between the inner wall of the vacuum cleaning chamber 2 and the base platform 5. The annular heater 26 is used to heat the inside of the vacuum cleaning chamber 2, the base platform 5, and the process gas introduced into the vacuum cleaning chamber 2.

[0048] In this embodiment, the vacuum cleaning chamber 2 is nearly trapezoidal in shape, with a wider inlet end and a smaller outlet end, which is more conducive to the discharge of cleaning impurities. The outlet 21 and the robotic arm inlet 23 are respectively located on opposite side walls of the vacuum cleaning chamber 2, and the air intake devices 22 are symmetrically distributed on both sides of the robotic arm inlet 23. The air intake device 22 includes an interconnected air intake pipe and an airflow controller 223. The air intake pipe is also connected to an external process gas source cabinet to input process gas into the vacuum cleaning chamber 2. The air intake pipe interface of the airflow controller 223 is equipped with a second rotary motor 224, which drives the air intake pipe interface to rotate. The outlet of the airflow controller 223 is equipped with a baffle plate 221 and a first rotary motor 222. The first rotary motor 222 drives the baffle plate 221 to rotate, thereby changing the air intake direction and airflow magnitude within the vacuum cleaning chamber 2.

[0049] In this embodiment, the first rotary motor 222 drives the baffle plate 221 to rotate, which can change the direction and amount of air intake. The second rotary motor 224 can drive the air intake pipe interface to rotate. Combined with the rotation of the baffle plate 221, a wide range of airflow direction control can be achieved, causing impurities in the vacuum cleaning chamber 2 to leave from the air outlet 21.

[0050] like Figures 7 to 9 As shown, in this embodiment, the lifting mechanism 4 includes a support ring 41, a drive motor 42, and a first bellows 43. The drive motor 42 is disposed outside the vacuum cleaning chamber 2, and the support ring 41 is disposed inside the vacuum cleaning chamber 2. The output end of the drive motor 42 is connected to the support ring 41 via a transmission shaft (not shown in the figure), and the outer side of the transmission shaft is sealed to the vacuum cleaning chamber 2 via the first bellows 43. The drive motor 42 drives the support ring 41 to move vertically, enabling the substrate to be transferred between the robot arm and the base platform 5.

[0051] Furthermore, the support ring 41 is provided with a contact arc 44, which is an inclined surface for supporting the substrate. Two matching grooves 45 are symmetrically provided at one end of the support ring 41, and a limiting arc 46 is provided at the other end of the support ring 41, and the limiting arc 46 is disposed on the contact arc 44. The matching grooves 45 and the limiting arc 46 are used for the transfer and positioning of the substrate.

[0052] like Figure 6 and Figure 10 As shown, in this embodiment, the hollow spindle 3 is internally equipped with an air inlet pipe 31, an air outlet pipe 32, a water inlet pipe 33, and a water outlet pipe 34. The base platform 5 includes a cooling plate 52, a second corrugated pipe 53, a heating plate 54, and a substrate platform 55. The bottom of the cooling plate 52 is connected to the hollow spindle 3, and the water inlet and outlet of the cooling plate 52 are respectively connected to the water inlet pipe 33 and the water outlet pipe 34. The second corrugated pipe 53 is sleeved on the outer periphery of the hollow spindle 3 to achieve a sealed connection between the hollow spindle 3, the base platform 5, and the vacuum cleaning chamber 2. The cooling plate 52 utilizes the cooling water circulation between the water inlet pipe 33 and the water outlet pipe 34 to reduce the temperature of the base platform 5 and ensure effective sealing at the second corrugated pipe 53.

[0053] In this embodiment, the heating plate 54 consists of multiple layers of uniformly distributed heating electrodes, located between the top of the cooling plate 52 and the bottom of the substrate stage 55. It can uniformly heat the substrate on the substrate stage 55, quickly reaching the temperature required for the cleaning process. The substrate stage 55 is provided with gas grooves (not shown in the figure) and multiple back argon gas holes 51. The inlet and outlet of the gas grooves are connected to the inlet pipe 31 and the outlet pipe 32, respectively. Inert back argon gas enters the substrate stage 55 through the inlet pipe 31, and the outlet pipe 32 connects to a vacuum pipe to extract the inert back argon gas from the substrate stage 55. When cleaning the substrate, the substrate-loading support ring 41 rests on the substrate stage 55, forming a space for storing inert back argon gas between the middle of the substrate and the upper surface of the substrate stage 55. The heating plate 54 heats the substrate to achieve uniform heating.

[0054] like Figure 11 As shown, in this embodiment, the substrate clamp 6 includes an arc-shaped support plate 61, an electric spring 62, and a rotating shaft 63. The electric spring 62 is disposed inside the arc-shaped support plate 61 to clamp the two sides of the substrate. One end of the rotating shaft 63 is connected to the arc-shaped support plate 61, and the other end of the rotating shaft 63 is sealed through the side wall of the vacuum cleaning chamber 2 and connected to an external drive mechanism. Driven by the drive mechanism, the rotating shaft 63 drives the arc-shaped support plate 61 to move up and down and rotate 90° within the vacuum cleaning chamber 2 to achieve double-sided cleaning of the substrate. Specifically, the drive mechanism may include a lifting motor and a rotating motor, as long as it can drive the substrate clamp 6 to move up and down and rotate.

[0055] In this embodiment, the initial substrate is transferred into the vacuum cleaning chamber 2 by a robotic arm. When the substrate is transferred to a preset position, it is clamped by the inner side of the arc-shaped support plate 61 under the action of the electric spring 62. After the robotic arm moves out of the vacuum cleaning chamber 2, the drive mechanism drives the substrate clamp 6 to lift and rotate the substrate by 90° to achieve double-sided cleaning of the substrate. Furthermore, both sides of the arc-shaped support plate 61 are chamfered to minimize the obstruction of the substrate edges by the arc-shaped support plate 61.

[0056] like Figure 3 As shown, in this embodiment, the electromagnetic mechanism 1 includes a shielding cover 11, an electromagnetic field device 12, and a magnetic field detector 13. The bottom of the shielding cover 11 is sealed to the top of the vacuum cleaning chamber 2 by a sealing ring 24. The electromagnetic field device 12 and the magnetic field detector 13 are both disposed inside the shielding cover 11. The electromagnetic field device 12 consists of two symmetrical electromagnet groups, each consisting of eight semi-annular electromagnets. The direction and intensity of the magnetic field in the vacuum cleaning chamber 2 are adjusted by controlling an external radio frequency power supply, and the magnetic field intensity in the vacuum cleaning chamber 2 is monitored in real time by the magnetic field detector 13, providing a reference for the selection of the cleaning process.

[0057] Example 2

[0058] like Figure 12 As shown, the substrate cleaning method of the present invention is implemented based on the vacuum cleaning apparatus in Example 1, and includes the following steps:

[0059] Step S1: Before starting the substrate cleaning process, first balance the pressure between the vacuum cleaning chamber 2 and the transfer chamber, then open the valve of the robot arm inlet 23, and the robot arm sends the substrate into the vacuum cleaning chamber 2.

[0060] Step S2: Drive motor 42 drives the bearing ring 41 to rise, move the substrate above the robot arm, and then the robot arm exits the vacuum cleaning chamber 2 and closes the valve of the robot arm inlet 23;

[0061] Step S3: Drive motor 42 drives the support ring 41 to descend, and the bottom of the support ring 41 cooperates with the top of the substrate stage 55 to form a whole;

[0062] Step S4: Determine the temperature and back argon size of the cleaning process, and adjust the temperature of the heating plate 54 and the gas flow rate of the back argon vent 51 respectively.

[0063] Step S5: Adjust the air pressure in the vacuum cleaning chamber 2 by using the airflow controller 223 to balance the air intake and exhaust, ensuring that the gas in the vacuum cleaning chamber 2 is constantly renewed while the power is on, so as to remove impurities generated during substrate cleaning.

[0064] Step S6: The radio frequency power supply is connected to the vacuum cleaning chamber 2 through the electromagnetic field device 12 to excite the process gas to ionize and form plasma to clean the upper surface of the substrate.

[0065] Step S7: After the cleaning process is completed, first balance the vacuum level between the vacuum cleaning chamber 2 and the transfer chamber, then open the valve of the robot inlet 23, and transfer the substrate from the base stage 5 to the transfer chamber through the cooperation of the lifting mechanism 4 and the robot, and then transfer it to the unloading chamber for the next process.

[0066] Step S8: Close the valve of the robot arm inlet 23, connect the radio frequency power supply to the annular partition 25 in the vacuum cleaning chamber 2, and perform self-cleaning of the vacuum cleaning chamber 2 to remove contaminants remaining from the substrate cleaning process.

[0067] In other embodiments, if the back side of the substrate also needs to be cleaned or the required cleaning is very high, then double cleaning is required. After the robot arm sends the substrate into the vacuum cleaning chamber 2, the substrate is held and lifted by the substrate clamp 6 and rotated 90° to be placed vertically. Then the direction of the electromagnetic field is adjusted so that the two electromagnet groups of the electromagnetic field device 12 are respectively aligned with the two surfaces of the substrate. The required temperature in the vacuum cleaning chamber 2 is adjusted by the ring heater 26. Then the radio frequency power supply is switched to the electromagnetic field device 12, and the two surfaces of the substrate are cleaned by plasma. After the substrate cleaning is completed, the vacuum cleaning chamber 2 is self-cleaned.

[0068] In this embodiment, the pressure between the vacuum cleaning chamber 2 and the transfer chamber is first balanced, and then the substrate is transferred into the vacuum cleaning chamber 2 by a robotic arm. Then, the substrate is transferred from the robotic arm to the top of the substrate stage 55 by the lifting mechanism 4, and the process environment in the vacuum cleaning chamber is adjusted according to the preset cleaning process. The radio frequency power supply is connected to the vacuum cleaning chamber 2 through the electromagnetic field device 12 to excite the process gas to ionize and form plasma, which can clean the upper surface of the substrate. If the substrate needs to be cleaned on both sides, the substrate can be lifted and rotated by the substrate clamp 6, and the direction of the electromagnetic field is adjusted at the same time. The plasma is used to clean the two surfaces of the substrate, realizing high-efficiency and high-quality cleaning of the substrate. After the substrate cleaning process is completed, the radio frequency power supply is connected to the annular partition 25 in the vacuum cleaning chamber 2 to excite the process gas to form plasma, which performs self-cleaning of the vacuum cleaning chamber 2 to remove contaminants remaining in the substrate cleaning process, further reducing the impact of the chamber's own contamination on the substrate.

[0069] While the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the invention. Any person skilled in the art can make many possible variations and modifications to the technical solutions of the present invention, or modify them into equivalent embodiments, without departing from the spirit and technical essence of the invention. Therefore, any simple modifications, equivalent substitutions, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention, without departing from the content of the present invention, shall still fall within the scope of protection of the present invention.

Claims

1. A vacuum cleaning device, characterized in that, include: The system comprises an electromagnetic mechanism (1), a vacuum cleaning chamber (2), a hollow spindle (3), a lifting mechanism (4), and a base platform (5). The electromagnetic mechanism (1) is sealed at the top of the vacuum cleaning chamber (2). The electromagnetic mechanism (1) is connected to an external radio frequency power supply to ionize the process gas inside the vacuum cleaning chamber (2) to form plasma for cleaning the substrate surface. The movable end of the lifting mechanism (4) is located inside the vacuum cleaning chamber (2), and the driving end of the lifting mechanism (4) is located outside the vacuum cleaning chamber (2). The connection between the lifting mechanism (4) and the vacuum cleaning chamber (2) is sealed. The base platform (5) is located inside the vacuum cleaning chamber (2), and the bottom of the base platform (5) is connected to the vacuum cleaning chamber (2). A hollow spindle (3) is connected and passes through the bottom of the vacuum cleaning chamber (2). The connection between the hollow spindle (3) and the vacuum cleaning chamber (2) is sealed. Inside the vacuum cleaning chamber (2), the lifting mechanism (4) is located above the base platform (5) to realize the transfer of the substrate between the robot and the base platform (5). The side of the vacuum cleaning chamber (2) is provided with an air outlet (21), an air inlet device (22) and a robot inlet (23). The process gas used to clean the substrate enters and exits the vacuum cleaning chamber (2) through the air inlet device (22) and the air outlet (21). The robot realizes the transfer of the substrate into or out of the vacuum cleaning chamber (2) through the robot inlet (23). The air outlet (21) and the robot arm inlet (23) are respectively set on the opposite side walls of the vacuum cleaning chamber (2). The air intake device (22) is symmetrically distributed on both sides of the robot arm inlet (23). The air intake device (22) includes an air intake pipe and an airflow controller (223) connected to each other. The air intake pipe interface of the airflow controller (223) is provided with a second rotary motor (224). The second rotary motor (224) is used to drive the air intake pipe interface to rotate. The air outlet of the airflow controller (223) is provided with a baffle plate (221) and a first rotary motor (222). The first rotary motor (222) drives the baffle plate (221) to rotate, so as to change the air intake direction and airflow size in the vacuum cleaning chamber (2).

2. The vacuum cleaning apparatus according to claim 1, characterized in that, It also includes a substrate clamp (6), the movable end of which is located inside the vacuum cleaning chamber (2), and the driving end of which is located outside the vacuum cleaning chamber (2). Inside the vacuum cleaning chamber (2), the substrate clamp (6) is located above the lifting mechanism (4). The substrate clamp (6) is used to hold the substrate and drive the substrate to lift and rotate, so as to realize double-sided cleaning of the substrate in the vacuum cleaning chamber (2).

3. The vacuum cleaning apparatus according to claim 2, characterized in that, The inner wall of the vacuum cleaning chamber (2) is provided with an annular partition (25) and an annular heater (26); when the vacuum cleaning chamber (2) performs self-cleaning, the annular partition (25) is used to connect to the radio frequency power supply; the annular heater (26) is vertically distributed around the base platform (5) and is located between the inner wall of the vacuum cleaning chamber (2) and the base platform (5). The annular heater (26) is used to heat the inside of the vacuum cleaning chamber (2), the base platform (5) and the process gas introduced into the vacuum cleaning chamber (2).

4. The vacuum cleaning apparatus according to claim 2, characterized in that, The lifting mechanism (4) includes a bearing ring (41), a drive motor (42), and a first bellows (43). The drive motor (42) is located outside the vacuum cleaning chamber (2), and the bearing ring (41) is located inside the vacuum cleaning chamber (2). The output end of the drive motor (42) is connected to the bearing ring (41) through a transmission shaft. The outer side of the transmission shaft is sealed to the vacuum cleaning chamber (2) through the first bellows (43).

5. The vacuum cleaning apparatus according to claim 4, characterized in that, The bearing ring (41) is provided with a contact arc (44), which is an inclined surface for supporting the substrate; one end of the bearing ring (41) is provided with two matching grooves (45), and the other end of the bearing ring (41) is provided with a limiting arc (46). The matching grooves (45) and the limiting arc (46) are used for the transfer and positioning of the substrate.

6. The vacuum cleaning apparatus according to claim 4, characterized in that, The hollow spindle (3) is provided with an air inlet pipe (31), an air outlet pipe (32), a water inlet pipe (33), and a water outlet pipe (34); the base platform (5) includes a cooling plate (52), a second corrugated pipe (53), a heating plate (54), and a substrate platform (55); the bottom of the cooling plate (52) is connected to the hollow spindle (3), and the water inlet and outlet of the cooling plate (52) are respectively connected to the water inlet pipe (33) and the water outlet pipe (34). The hollow spindle (3) is fitted with a second corrugated pipe (53) on its outer periphery to achieve a sealed connection between the hollow spindle (3) and the base platform (5) and the vacuum cleaning chamber (2); The heating plate (54) is set on top of the cooling plate (52), and the substrate stage (55) is set on top of the heating plate (54). The substrate stage (55) is provided with a gas groove and multiple back argon gas holes (51). The inlet and outlet of the gas groove are connected to the inlet pipe (31) and the outlet pipe (32) respectively, so as to realize the inert back argon gas entering and exiting the substrate stage (55). When the substrate is cleaned, the carrier ring (41) that loads the substrate falls on the substrate stage (55). A space for storing inert back argon gas is formed between the middle part of the substrate and the upper surface of the substrate stage (55). The substrate is heated by the heating plate (54) to realize uniform heating of the substrate.

7. The vacuum cleaning apparatus according to any one of claims 2 to 6, characterized in that, The substrate clamp (6) includes an arc-shaped support plate (61), an electric spring (62), and a rotating shaft (63). The electric spring (62) is located inside the arc-shaped support plate (61) to clamp the two sides of the substrate. One end of the rotating shaft (63) is connected to the arc-shaped support plate (61), and the other end of the rotating shaft (63) is sealed through the side wall of the vacuum cleaning chamber (2) and connected to an external drive mechanism. Under the drive of the drive mechanism, the rotating shaft (63) drives the arc-shaped support plate (61) to rise and fall and rotate 90° in the vacuum cleaning chamber (2) to achieve double-sided cleaning of the substrate.

8. The vacuum cleaning apparatus according to any one of claims 1 to 6, characterized in that, The electromagnetic mechanism (1) includes: a shield (11), an electromagnetic field device (12), and a magnetic field detector (13). The bottom of the shield (11) is sealed to the top of the vacuum cleaning chamber (2). The electromagnetic field device (12) and the magnetic field detector (13) are both installed inside the shield (11). The electromagnetic field device (12) consists of two symmetrical electromagnet groups. It is controlled by an external radio frequency power supply to adjust the direction and intensity of the magnetic field in the vacuum cleaning chamber (2) and monitors the magnetic field intensity in the vacuum cleaning chamber (2) in real time through the magnetic field detector (13).

9. A substrate cleaning method based on the vacuum cleaning apparatus according to any one of claims 1 to 8, characterized in that, Includes the following steps: Step S1: Before starting the substrate cleaning work, first balance the pressure between the vacuum cleaning chamber (2) and the transfer chamber, then open the valve of the robot inlet (23), and the robot will send the substrate into the vacuum cleaning chamber (2); Step S2: Drive motor (42) drives bearing ring (41) to rise, move substrate above robot arm, then robot arm exits vacuum cleaning chamber (2), and closes valve of robot arm inlet (23); Step S3: Drive motor (42) drives the bearing ring (41) to descend, and the bottom of the bearing ring (41) and the top of the substrate stage (55) cooperate to form a whole; Step S4: Determine the temperature and back argon size of the cleaning process, and adjust the temperature of the heating plate (54) and the gas flow rate of the back argon vent (51) respectively; Step S5: Adjust the air pressure in the vacuum cleaning chamber (2) by using the airflow controller (223) to balance the inlet and outlet air, ensuring that the gas in the vacuum cleaning chamber (2) is constantly renewed while the power is on, so as to remove impurities generated during substrate cleaning. Step S6: Connect the radio frequency power supply to the vacuum cleaning chamber (2) through the electromagnetic field device (12) to excite the process gas to ionize and form plasma to clean the upper surface of the substrate. Step S7: After the cleaning process is completed, first balance the vacuum degree between the vacuum cleaning chamber (2) and the transfer chamber, then open the valve of the robot inlet (23), and transfer the substrate from the base platform (5) to the transfer chamber through the cooperation of the lifting mechanism (4) and the robot, and then transfer it to the unloading chamber for the next process. Step S8: Close the valve of the robot arm inlet (23), connect the radio frequency power supply to the annular partition (25) in the vacuum cleaning chamber (2), and perform self-cleaning of the vacuum cleaning chamber (2) to remove contaminants remaining from the substrate cleaning process.

10. The substrate cleaning method according to claim 9, characterized in that, When the substrate needs to be cleaned on both sides, the robot sends the substrate into the vacuum cleaning chamber (2), and then uses the substrate clamp (6) to hold the substrate up and rotate it 90° to place it vertically. Then the direction of the electromagnetic field is adjusted, and the two electromagnet groups of the electromagnetic field device (12) are aligned with the two surfaces of the substrate respectively. The required temperature in the vacuum cleaning chamber (2) is adjusted by the ring heater (26). Then the radio frequency power supply is switched to the electromagnetic field device (12) and the plasma is used to clean the two surfaces of the substrate. After the substrate cleaning is completed, the vacuum cleaning chamber (2) is then self-cleaned.

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