A display panel and display device

Abstract

Embodiments of the present application provide a display panel and a display device, the display panel comprising a driving substrate, light emitting elements and an anti-reflection layer, the light emitting element comprising a first type semiconductor, a second type semiconductor and a light emitting layer between the first type semiconductor and the second type semiconductor; the first type semiconductor comprising a main body part and an extension part at least partially surrounding the main body part, the extension part not overlapping with the second type semiconductor and / or the light emitting layer; the extension part being provided with a groove structure on a side close to the driving substrate, and the anti-reflection layer being at least partially located between the light emitting elements. The groove structure prolongs the capillary path of the anti-reflection layer on the light emitting element, blocks the capillary of the anti-reflection layer to the surface of the light emitting element, avoids the damage of the anti-reflection layer to the light emitting element and the shielding of the emitted light, thereby ensuring the light extraction efficiency of the light emitting element and the display effect of the display panel.

Description

Technical Field

[0001] This invention relates to the field of display technology, and more particularly to a display panel and a display device. Background Technology

[0002] In recent years, LED (Light Emitting Diode) display panels have seen LED light-emitting devices gradually achieve mass production in fields such as AR (Augmented Reality) / VR (Virtual Reality) and next-generation displays due to their advantages such as long lifespan, high contrast, and fast response speed.

[0003] However, there are still some problems with LED display panels, such as the high reflectivity of the screen, which affects the display effect. Summary of the Invention

[0004] This invention provides a display panel and a display device. By extending the semiconductor layer of the light-emitting element in all directions and adding a groove structure on the side of the extension away from the light-emitting side, the groove extends the capillary path of the anti-reflective layer on the light-emitting element, preventing the anti-reflective layer from capilling to the chip surface, thereby ensuring the light extraction efficiency of the light-emitting element and the display effect of the display panel.

[0005] In a first aspect, embodiments of the present invention provide a display panel, comprising:

[0006] Drive substrate;

[0007] A light-emitting element located on one side of a driving substrate; the light-emitting element includes a first type semiconductor, a second type semiconductor, and a light-emitting layer located between the first type semiconductor and the second type semiconductor; the first type semiconductor includes a main body portion and an extension portion at least partially surrounding the main body portion, the extension portion not overlapping with the second type semiconductor and / or the light-emitting layer; a groove structure is provided on the side of the extension portion near the driving substrate;

[0008] Anti-reflective layer; the anti-reflective layer is at least partially located between the light-emitting elements.

[0009] Secondly, embodiments of the present invention also provide a method for preparing a display panel, used to prepare the display panel provided in the first aspect, the method comprising:

[0010] Provide driving substrate;

[0011] Fabricating a light-emitting element; the light-emitting element includes a first type semiconductor, a second type semiconductor, and a light-emitting layer located between the first type semiconductor and the second type semiconductor; the first type semiconductor includes a main body portion and an extension portion at least partially surrounding the main body portion, the extension portion not overlapping with the second type semiconductor and / or the light-emitting layer; a groove structure is provided on the side of the extension portion near the driving substrate;

[0012] Transfer the light-emitting element to one side of the driving substrate;

[0013] An anti-reflective layer is deposited on the surface of the driving substrate on which the light-emitting elements are located; the anti-reflective layer is at least partially located between the light-emitting elements.

[0014] Thirdly, embodiments of the present invention also provide a display device, which includes the display panel provided in the first aspect.

[0015] The display panel provided in this embodiment of the invention extends the semiconductor layer of the light-emitting element outward to form an extension portion, and provides a plurality of groove structures on the side of the extension portion away from the light-emitting surface. In the transverse direction, the extension portion extends the capillary path of the anti-reflection layer on the light-emitting element, and in the longitudinal direction, the grooves block the anti-reflection layer from capilling to the surface of the light-emitting element, thereby avoiding damage to the light-emitting element by the anti-reflection layer and the blocking of emitted light, thus ensuring the light extraction efficiency of the light-emitting element and the display effect of the display panel. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of a display panel provided by related technologies;

[0017] Figure 2 This is a top view schematic diagram of a display panel provided in an embodiment of the present invention;

[0018] Figure 3 yes Figure 2 A cross-sectional schematic diagram of a display panel along the AA' direction;

[0019] Figure 4 This is a top view schematic diagram of another display panel provided in an embodiment of the present invention;

[0020] Figure 5 yes Figure 4 A cross-sectional schematic diagram of a display panel along the BB' direction;

[0021] Figure 6 This is a top view schematic diagram of another display panel provided in an embodiment of the present invention;

[0022] Figure 7 This is a top view schematic diagram of another display panel provided in an embodiment of the present invention.

[0023] Figure 8yes Figure 2 A cross-sectional schematic diagram of another type of display panel along the AA' direction;

[0024] Figure 9 yes Figure 2 A cross-sectional schematic diagram of another type of display panel along the AA' direction;

[0025] Figure 10 yes Figure 2 A cross-sectional schematic diagram of another type of display panel along the AA' direction;

[0026] Figure 11 This is a schematic flowchart of a method for manufacturing a display panel according to an embodiment of the present invention;

[0027] Figure 12 This is a schematic diagram of the structure of a display device provided in an embodiment of the present invention. Detailed Implementation

[0028] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It is understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the invention and not all structures. Various modifications and variations can be made to the present invention without departing from its spirit or scope, which will be apparent to those skilled in the art. Therefore, the present invention is intended to cover modifications and variations falling within the scope of the corresponding claims (the claimed technical solutions) and their equivalents. It should be noted that the embodiments provided in the present invention can be combined with each other without contradiction.

[0029] Figure 1 This is a structural diagram of a display panel provided by related technologies. (Reference) Figure 1 As shown, in a related technology, an LED light-emitting device of a display panel 100 is exemplarily described. A single LED device 10 is bonded to a driving substrate 11 by mass transfer. After the encapsulation process is completed, for the high reflectivity areas, the prior art usually uses a light-absorbing material 12 to fill the periphery and bottom of the LED device 10 to reduce the reflectivity. Since there is a certain step difference Δ1 between the LED device 10 and the substrate of the driving substrate 11, capillary action is easily generated. That is, the light-absorbing material 12 capills along the sidewall of the LED device 10 into the patterned sapphire substrate (PSS) structure on the top of the LED device 10 chip, affecting the light extraction efficiency of the LED device 10 and the display effect of the display panel.

[0030] To address the aforementioned technical issues, this invention provides a display panel comprising a driving substrate, light-emitting elements, and an anti-reflective layer. The driving substrate has a light-emitting element located on one side of it. The light-emitting element includes a first type semiconductor, a second type semiconductor, and a light-emitting layer located between the first type semiconductor and the second type semiconductor. The first type semiconductor includes a main body and an extension portion at least partially surrounding the main body. The extension portion does not overlap with the second type semiconductor and / or the light-emitting layer. A groove structure is provided on the side of the extension portion near the driving substrate. The anti-reflective layer is at least partially located between the light-emitting elements.

[0031] By adopting the above technical solution, the semiconductor layer of the light-emitting element is extended outward to form an extension portion, and multiple groove structures are set on the side of the extension portion away from the light-emitting surface. In the lateral direction, the extension portion extends the capillary path of the anti-reflection layer on the light-emitting element, and the grooves block the anti-reflection layer, preventing the anti-reflection layer from capilling to the surface of the light-emitting element and avoiding damage to the light-emitting element and obstruction of the emitted light by the anti-reflection layer, thereby ensuring the light extraction efficiency of the light-emitting element and the display effect of the display panel.

[0032] The above is the core idea of ​​this invention. The technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0033] Figure 2 This is a top view schematic diagram of a display panel provided in an embodiment of the present invention; Figure 3 yes Figure 2 A cross-sectional schematic diagram of the display panel along the AA' direction; Figure 4 This is a top view schematic diagram of another display panel provided in an embodiment of the present invention; Figure 5 yes Figure 4 A cross-sectional schematic diagram of a display panel along the BB' direction. (Combined with...) Figures 2-5 As shown, an embodiment of the present invention provides a display panel 200 including a driving substrate 20, light-emitting elements 30, and an anti-reflection layer 40. The light-emitting elements 30 are located on one side of the driving substrate 20. The light-emitting elements 30 include a first type semiconductor 31, a second type semiconductor 33, and a light-emitting layer 32 located between the first type semiconductor 31 and the second type semiconductor 33. The first type semiconductor 31 includes a main body portion 311 and an extension portion 312 that at least partially surrounds the main body portion 311. The extension portion 312 does not overlap with the second type semiconductor 33 and / or the light-emitting layer 32. A groove structure 34 is provided on the side of the extension portion 312 near the driving substrate 20. The anti-reflection layer 40 is at least partially located between the light-emitting elements 30.

[0034] For details, please refer to Figures 2-5 As shown, the display panel 200 may include an LED (Light Emitting Diode) display panel, a Micro LED (Micro Light Emitting Diode) display panel, a Mini LED (Mini Light Emitting Diode) display panel, etc. The embodiments of the present invention do not impose specific limitations on the type of display panel 200.

[0035] Combination Figures 2-5 As shown, the light-emitting element 30 can be an LED, Micro LED, Mini LED, etc., and this application embodiment does not impose any limitations. The light-emitting element 30 includes a first type semiconductor 31, a light-emitting layer 32, and a second type semiconductor 33 disposed along the X direction. The first type semiconductor 31 can be an N-type nitride semiconductor layer, the light-emitting layer 32 is a quantum well layer, and the second type semiconductor 33 is a P-type nitride semiconductor layer, forming a PN junction.

[0036] Combination Figure 3 and Figure 5 As shown, an extension portion 312 is formed by extending the peripheral region of the main body portion 311 of the first type semiconductor 31 outward. This extension portion 312 does not overlap with the second type semiconductor 33 and / or the light-emitting layer 32. A groove structure 34 is formed on the side of the extension portion 312 away from the light-emitting side. For example, an etching process is used to etch multiple groove structures 34 on the side of the extension portion 312 away from the light-emitting side. In other embodiments, the extension portion 312 can also be formed by extending one, two, or three sides of the main body portion 311 of the first type semiconductor 31 outward.

[0037] After the light-emitting element 30 is mass-transfer bonded to the driving substrate 20, an anti-reflective layer 40 is deposited on the same side of the light-emitting element 30. The anti-reflective layer 40 is made of a black material, such as black ink, to absorb reflected light and reduce reflectivity. During the deposition of the anti-reflective layer 40, part of the anti-reflective layer 40 accumulates around the light-emitting element 30, and part of the anti-reflective layer 40 extends along the capillary path of the sidewall of the light-emitting element 30 to the groove structure 34. In the lateral direction, the uneven groove structure 34 can extend the capillary path of the anti-reflective layer 40 on the light-emitting element 30. In the longitudinal direction, at the groove position, the gravity of the capillary ink will counteract the capillary force, preventing the anti-reflective layer 40 from damaging the surface PSS structure of the light-emitting element 30 and causing a loss of light efficiency, thereby ensuring the light extraction efficiency of the light-emitting element 30 and the display effect of the display panel.

[0038] The horizontal direction refers to the X direction, Y direction, or any direction within the XY plane in the diagram; the vertical direction refers to the Z direction in the diagram, which can also be referred to as the thickness direction of the display panel 200.

[0039] Continue to refer to Figure 3 and Figure 5 As shown, the driving substrate 20 includes a substrate 21 and a pixel circuit layer 22 located on one side of the substrate 21. The driving substrate 21 can be a rigid material such as glass or silicon wafer, or a flexible material such as ultra-thin glass, metal foil, or polymer plastic. The flexible or rigid driving substrate 21 can block oxygen and moisture, preventing moisture or impurities from diffusing into the display panel through the driving substrate 21. The pixel circuit layer 22 includes pixel circuits, which can be 2T1C, 4T1C, 7T1C, 7T2C, 8T1C, 8T2C, etc. The pixel circuits include multiple thin-film transistors 220, storage capacitors, and metal traces (not shown in the figure). The drain (or source) of the thin-film transistors 220 is electrically connected to the anode of the light-emitting element 30. The pixel circuit layer 22 is used to provide a driving voltage to the light-emitting element 30 to drive the light-emitting element 30 to emit light.

[0040] The display panel 200 provided in this embodiment also includes other film layers, such as thin film encapsulation layers (not shown in the figure), which work together to realize the display function of the display panel. They will not be described in detail here.

[0041] In summary, the display panel provided by the embodiments of the present invention extends the semiconductor layer of the light-emitting element by increasing its size, and provides multiple groove structures on the side of the extension that is away from the light-emitting surface. In the transverse direction, the extension extends the capillary path of the anti-reflection layer on the light-emitting element, and in the longitudinal direction, the grooves block the anti-reflection layer, preventing the anti-reflection layer from capilling to the surface of the light-emitting element, thus avoiding damage to the light-emitting element and blocking of emitted light by the anti-reflection layer, thereby ensuring the light extraction efficiency of the light-emitting element and the display effect of the display panel.

[0042] Based on the above embodiments, continue to refer to Figure 3 As shown, the first type semiconductor 31 is located on the side of the light-emitting layer 32 away from the driving substrate 20.

[0043] In some embodiments, the first type semiconductor 31 is located on the top light-emitting side of the light-emitting element 30. The gap Δ between the light-emitting element 30 and the substrate of the driving substrate 20 is small, and the phenomenon of the anti-reflection layer 40 capilling to the surface of the light-emitting element 30 is more serious. A groove structure 34 can be provided on the first type semiconductor 31 on the side of the light-emitting layer 32 away from the driving substrate 20. The groove structure 34 is used to block the anti-reflection layer 40 from capilling to the surface of the light-emitting element 30.

[0044] Based on the above embodiments, continue to refer to Figure 3 As shown, along the first direction Z, the thickness of the extension 312 is d, and the thickness of the first type semiconductor 31 is D, where d≤D; wherein, the first direction Z is perpendicular to the plane where the driving substrate 20 is located.

[0045] For details, please refer to Figure 3 As shown, taking the first type semiconductor 31 as an N-type nitride layer and the second type semiconductor 33 as a P-type nitride layer as an example, the N-type nitride layer 100 can be a single layer or multiple layers, with a total thickness D of 2µm to 3µm. The light-emitting layer 32 is a quantum well layer with a thickness of about 400nm, and the P-type nitride layer can be a single layer or multiple layers with a total thickness of about 2µm. By thinning the etched extension 312 and setting the thickness d of the extension 312 to be smaller than the thickness D of the first type semiconductor 31, it is beneficial to increase the distance between the extension 312 and the anti-reflection layer 40, extend the capillary path of the anti-reflection layer 40 on the sidewall of the light-emitting element 30, and reduce capillary phenomena.

[0046] Optionally, the value of d can range from 50% D to 80% D.

[0047] For example, limiting the thickness d of the extension 312 to a range of 1µm to 1.5µm can prevent collapse caused by the extension 312 being too thin; and prevent the capillary path from being too short to block the capillaries of the anti-reflective layer 40.

[0048] Based on the above embodiments, continue to refer to Figure 3 As shown, the groove depth 'a' of the groove structure 34 ranges from 20%d to 50%d.

[0049] Specifically, the side of the extension 312 away from the light-emitting surface is grooved to form multiple groove structures 34 with the same or different structures. The groove depth a is about 20% to 50% of the thickness d of the extension 312. This can avoid the extension 312 from collapsing or breaking due to over-etching. For example, the groove depth a ranges from 0 to 500 nm.

[0050] Optionally, the groove width b of the groove structure 34 can be as small as 1%d.

[0051] For example, when the total thickness D of the N-type nitride layer 100 is 2µm to 3µm, the thickness d of the extension 312 is 1µm to 1.5µm, and the minimum value of the groove width b is 5nm.

[0052] Optionally, the shape of the groove structure 34 includes at least one of a pointed groove, a rectangular groove, and a rounded rectangular groove.

[0053] Specifically, the number of grooves in the extension 312 is set according to the size of the light-emitting element 30. The shape of the grooves is not limited to the pointed shape in the embodiment of this application, but can also be a rectangular groove or a rounded rectangular groove, etc.

[0054] Based on the above embodiments, continue to refer to Figure 2 As shown, along the second direction X, the maximum width of the main body 311 projected onto the driving substrate 20 is L, and the width of the extension 312 projected onto the driving substrate 20 is L0, satisfying L0≤L / 4; wherein, the second direction is parallel to the direction of the plane where the driving substrate 20 is located.

[0055] For details, please refer to Figure 2 As shown, along the X and / or Y directions in the figure, the width L0 of the orthographic projection of the extension 312 on the driving substrate 20 is limited to no more than 1 / 4 of the maximum width L of the orthographic projection of the main body 311 on the driving substrate 20. This can prevent the extension 312 from collapsing or breaking due to excessive width, and ensure the blocking effect of the extension 312 against the anti-reflective layer 40.

[0056] The maximum width L is determined by the size of the light-emitting element 30.

[0057] Figure 6 This is a top view schematic diagram of another display panel provided in an embodiment of the present invention.

[0058] Based on the above embodiments, referring to Figure 6 As shown, the display panel 200 includes a display center area A1 and a display edge area A2 surrounding the display center area A1; the light-emitting element 30 includes a first light-emitting element 30a located in the display center area A1 and a second light-emitting element 30b located in the display edge area A2, the arrangement density of the first light-emitting element 30a is greater than the arrangement density of the second light-emitting element 30b; along the second direction (X or Y), the ratio of the width of the extension portion 312 of the first light-emitting element 30a projected onto the driving substrate 20 to the maximum width of its main body portion 311 projected onto the driving substrate 20 is c1, and the ratio of the width of the extension portion 312 of the second light-emitting element 30b projected onto the driving substrate 20 to the maximum width of its main body portion 311 projected onto the driving substrate 20 is c2, c1 > c2.

[0059] Specifically, refer to Figure 6As shown, the display panel 200 includes a display area AA and a non-display area NA surrounding the display area AA. The display area AA is used to display images, and the non-display area NA is used to set various signal traces and bezel packaging, etc. (not shown in the figure). In some embodiments, the display area AA includes a display center area A1 and a display edge area A2 surrounding the display center area A1. The arrangement density of the first light-emitting elements 30a in the display center area A1 is the same as the arrangement density of the second light-emitting elements 30b in the display edge area A2, so as to meet the application requirements of higher display effect in the display center area A1. Because the arrangement density of the first light-emitting elements 30a is relatively large, the anti-reflective layer 40 between adjacent first light-emitting elements 30a is difficult to spread out, which easily causes accumulation and aggravates capillary phenomenon. Based on this problem, compared to the second light-emitting element 30b in the display edge region A2, the embodiment of this application further increases the width L0a of the extension 312 of the first light-emitting element 30a. The ratio c1 of the width L0a of the extension 312 of the first light-emitting element 30a projected onto the driving substrate 20 and the maximum width La of the main body 311 projected onto the driving substrate 20 is greater than the ratio c2 of the width L0b of the extension 312 of the second light-emitting element 30b projected onto the driving substrate 20 and the maximum width Lb of the main body 311 projected onto the driving substrate 20, i.e. (L0a / La) > (L0b / Lb). By differentiating the light-emitting elements with different densities, the area ratio of the extension 312 of the first light-emitting element 30a is further increased, the capillary path of the anti-reflective layer 40 in the first light-emitting element 30a is extended, the capillary phenomenon in the display center region A1 is reduced, and the display effect of the display center region A1 is guaranteed.

[0060] The first light-emitting element 30a and the second light-emitting element 30b may emit the same or different colors, and this application embodiment does not impose any restrictions.

[0061] Figure 7 This is a top view schematic diagram of another display panel provided in an embodiment of the present invention.

[0062] Based on the above embodiments, referring to Figure 7 As shown, the light-emitting element 30 includes a third light-emitting element 30c and a fourth light-emitting element 30d with different light-emitting colors; the area Sc of the main body portion 311 of the third light-emitting element 30c projected onto the driving substrate 20 is greater than the area Sd of the main body portion 311 of the fourth light-emitting element 30d projected onto the driving substrate 20; along the second direction (X or Y), the ratio of the width of the extension portion 312 of the third light-emitting element 30c projected onto the driving substrate 20 to the maximum width of its main body portion 311 projected onto the driving substrate 20 is c3, and the ratio of the width of the extension portion 312 of the fourth light-emitting element 30c projected onto the driving substrate 20 to the maximum width of its main body portion 311 projected onto the driving substrate 20 is c4, where c3 < c4.

[0063] Specifically, refer to Figure 7 As shown, there are two light-emitting elements, a third light-emitting element 30c and a fourth light-emitting element 30d, with different emitting colors. For example, the third light-emitting element 30c is a red light-emitting element R, and the fourth light-emitting element 30d is a green light-emitting element G or a blue light-emitting element B; the third light-emitting element 30c is a green light-emitting element G, and the fourth light-emitting element 30d is a blue light-emitting element B. The main body 311 is the effective light-emitting area of ​​the light-emitting element 30. The effective light-emitting area of ​​the third light-emitting element 30c is larger than that of the fourth light-emitting element 30d. During the deposition of the anti-reflection layer 40, capillary action has a significant impact on the light extraction efficiency of the fourth light-emitting element 30d, which has a smaller effective light-emitting area. Based on this problem, compared to the third light-emitting element 30c, which has a larger effective light-emitting area, this application further increases the width L0d of the extension portion 312 in the fourth light-emitting element 30d. This makes the ratio c4 of the width L0d of the extension portion 312 projected onto the driving substrate 20 and the maximum width Ld of the main body 311 projected onto the driving substrate 20 greater than that of the third light-emitting element 30c. The ratio c3 of the width L0c of the extension 312 of element 30c projected onto the driving substrate 20 and the maximum width Lc of the main body 311 projected onto the driving substrate 20, i.e. (L0c / Lc) < (L0d / Ld), is used to further increase the area ratio of the extension 312 in the small-sized first light-emitting element 30a by differentiating the light-emitting elements of different colors, extending the capillary path of the anti-reflection layer 40 in the fourth light-emitting element 30d, reducing the capillary phenomenon of the fourth light-emitting element 30d, and ensuring the display effect of the small-sized fourth light-emitting element 30d; and balancing the capillary phenomenon of the anti-reflection layer 40 on light-emitting elements 30 of different colors, ensuring the light extraction efficiency and display effect of the light-emitting elements.

[0064] Figure 8 yes Figure 2 A cross-sectional schematic diagram of another type of display panel along the AA' direction.

[0065] Based on the above embodiments, refer to Figure 8 As shown, the light-emitting element 30 also includes a support structure 35, which covers the main body 311 and the extension 312 of the light-emitting element 30; wherein, the thickness P of the support structure 35 is less than the thickness D of the first type semiconductor 31.

[0066] For details, please refer to Figure 8 As shown, a support structure 35 is added to the surface of the first type semiconductor 31 to increase the strength of the first type semiconductor 31, prevent the extension 312 from being too long and causing breakage and collapse, and ensure that the extension 312 can extend the capillary path and block capillary phenomena.

[0067] Furthermore, the thickness P of the support structure 35 is limited to P < D, to avoid the support structure 35 being too thick and blocking the emitted light, thus ensuring the light extraction efficiency of the light-emitting element 30. For example, the thickness P of the support structure 35 is 0.5 μm to 1 μm.

[0068] Optional, continue to refer to Figure 8 As shown, the material of the support structure 35 includes a transparent insulating material; the transmittance of the transparent insulating material is greater than the transmittance of the first type semiconductor 31.

[0069] Specifically, the support structure 35 is an insulating and light-reflecting material used to improve light transmittance, such as oxynitride, polyimide (PI) film, polyolefin (PP, PE) film, etc.

[0070] Figure 9 yes Figure 2 A cross-sectional schematic diagram of another type of display panel along the AA' direction.

[0071] Based on the above embodiments, combined with Figure 4 , Figure 5 and Figure 9 As shown, the first type of semiconductor 31 is located on the side of the light-emitting layer 32 close to the driving substrate 20.

[0072] Combination Figure 4 and Figure 5 As shown, in some embodiments, the first type semiconductor 31 is located on the bottom backlight side of the light-emitting element 30. The outer periphery of the main body portion 311 of the first type semiconductor 31 is extended outward to form an extension portion 312. The extension portion 312 partially surrounds the main body portion 311. The extension portion 312 does not overlap with the second type semiconductor 33 and / or the light-emitting layer 32. A groove structure 34 is formed on the side of the extension portion 312 away from the light-emitting side.

[0073] refer to Figure 9 As shown, based on the addition of a groove structure 34 to the first type semiconductor 31, the outer region of the main body (not shown in the figure) of the second type semiconductor 33 can be extended outward to form an extension 312'. The extension 312 surrounds the main body and does not overlap with the first type semiconductor 31 and / or the light-emitting layer 32. A groove structure 34' is formed on the side of the extension 312' away from the light-emitting side to form a capillary blocking structure with a longitudinal gradient, thereby enhancing the blocking effect on capillary phenomena.

[0074] Figure 10 yes Figure 2 A cross-sectional schematic diagram of another display panel along the AA' direction. Based on the above embodiment, refer to... Figure 10 As shown, the groove structure 34 is also located on at least a portion of the sidewall of the extension 312.

[0075] For details, please refer to Figure 10 As shown, groove structures 34 are etched on the side away from the light-emitting side of the extension 312 and on at least part of the sidewall to further increase the capillary path, extend the groove structure 34 to block the anti-reflection layer 40, and ensure the light extraction effect of the light-emitting element 30.

[0076] Based on the above embodiments, combined with Figures 3-6 As shown, the light-emitting element 30 also includes a first electrode and a second electrode (not shown in the figure); the first electrode is connected to the first semiconductor layer 31, and the second electrode is connected to the second semiconductor layer 33; along the first direction, the first electrode and / or the second electrode do not overlap with the groove structure 34.

[0077] Specifically, refer to Figures 4-6 As shown, the first and second electrodes of the light-emitting element 30 are typically metal PADs, the materials of which include, but are not limited to, metals such as Cr, Pt, Ru, Au, Ag, Mo, Al, W, Cu, and / or AlNd. The first electrode can be an anode and the second electrode can be a cathode; alternatively, the first electrode can be a cathode and the second electrode can be an anode. This application does not impose any limitations on these embodiments.

[0078] Based on the same inventive concept, this application also provides a method for manufacturing a display panel, used to manufacture the display panel provided in the above embodiments. Figure 11 This invention provides a method for manufacturing a display panel, as described in an embodiment of the invention. (Refer to...) Figures 1-11 As shown in the embodiments of this application, a method for manufacturing a display panel is also provided, including:

[0079] S101, Provides a driving substrate.

[0080] For details, please refer to [link / reference]. Figure 3 , Figure 5 , Figures 8-10 As shown, the driving substrate 20 includes a substrate 21 and a pixel circuit layer 22 located on one side of the substrate 21. The pixel circuit of the pixel circuit layer 22 can be a 2T1C, 4T1C, 7T1C, 7T2C, 8T1C, 8T2C, etc. circuit structure. The pixel circuit includes multiple thin-film transistors 220, storage capacitors, and metal traces, etc. (not shown in the figure). For example, a top-gate type thin-film transistor is used as an example to illustrate the structure of the pixel circuit layer 22. For details, refer to... Figure 3As shown, the pixel circuit layer 22 includes an active layer 221 on the driving substrate 21; a gate insulating layer 222 on the active layer 221; a gate 223 on the gate insulating layer 222; a first interlayer insulating layer 224 on the gate 223; a capacitor layer 225 on the first interlayer insulating layer 224; a second interlayer insulating layer 226 on the capacitor layer 225, wherein the interlayer insulating layer can be formed by an inorganic layer such as silicon oxide or silicon nitride; a source electrode 227 and a drain electrode 228 on the second interlayer insulating layer 226, wherein the source electrode 227 and the drain electrode 228 are electrically connected to the source region and the drain region respectively through contact holes (not shown in the figure); a passivation layer 229 on the source electrode 227 and the drain electrode 228 of the thin film transistor 220; and an insulating layer 23 on the passivation layer 229, which can also be called a planarization layer and has a planarization function. The drain electrode 228 of the thin-film transistor 220 is electrically connected to the anode of the light-emitting element 30 through the connection electrode 230 in the insulating layer 23. The connection electrode 230 can be made of the same material as the source electrode 227 and the drain electrode 228, such as metals such as Cr, Pt, Ru, Au, Ag, Mo, Al, W, Cu and / or AlNd, or metals or conductive oxides including ITO, GIZO, GZO, IZO (InZnO) or AZO (AlZnO) to ensure the transmission of connection current signals.

[0081] S102, Prepare the light-emitting element.

[0082] The light-emitting element includes a first type semiconductor, a second type semiconductor, and a light-emitting layer located between the first type semiconductor and the second type semiconductor; the first type semiconductor includes a main body and an extension portion that at least partially surrounds the main body, the extension portion not overlapping with the second type semiconductor and / or the light-emitting layer; a groove structure is provided on the side of the extension portion near the driving substrate.

[0083] Specifically, to prepare Figure 3 Taking the light-emitting element 30 shown as an example, refer to Figure 3 As shown, a first type semiconductor 31, a light-emitting layer 32, and a second type semiconductor 33 are epitaxially grown in sequence, and a groove structure 34 is formed by etching the side of the extension 312 of the first type semiconductor 31 away from the light-emitting side.

[0084] S103, Transfer the light-emitting element to one side of the driving substrate.

[0085] For details, please refer to [link / reference]. Figure 3 As shown, the light-emitting element 30 is transferred in large quantities to one side of the driving substrate 20 and bonded. Specifically, the anode 30-A of the light-emitting element 30 is electrically connected to the thin film transistor 220 of the driving substrate 20, and the cathode 30-B of the light-emitting element 30 is electrically connected to the common electrode (not shown in the figure), thereby driving the light-emitting element 30 to emit light.

[0086] S104. Deposit an anti-reflective layer on the surface of the driving substrate where the light-emitting element is located.

[0087] The anti-reflective layer is located at least partially between the light-emitting elements.

[0088] For details, please refer to [link / reference]. Figure 3 As shown, an anti-reflective layer 40 is deposited between adjacent light-emitting elements 30. The groove structure 34 extends the capillary path and blocks the anti-reflective layer 40 from extending to the surface of the light-emitting element 30, thus ensuring the light extraction effect of the light-emitting element 30 and the display effect of the display panel.

[0089] Based on the same inventive concept, embodiments of the present invention also provide a display device. Figure 12 This is a schematic diagram of the structure of the display device provided in an embodiment of the present invention, such as... Figure 12 As shown, the display device includes any of the display panels provided in the above embodiments. For example, such as... Figure 12 As shown, the display device 300 includes a display panel 200. Therefore, this display device also has the beneficial effects of the display panel in the above embodiments. The similarities can be understood with reference to the explanation of the display panel above, and will not be repeated below.

[0090] The display device 300 provided in this embodiment of the invention can be Figure 12 The mobile phone shown can also be any electronic product with display function, including but not limited to the following categories: television, laptop, desktop monitor, tablet computer, digital camera, smart bracelet, smart glasses, in-vehicle display, industrial control equipment, medical display screen, touch interactive terminal, etc. The embodiments of the present invention do not make any special limitations on this.

[0091] Note that the above description is merely a preferred embodiment of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments, and substitutions can be made without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments, and may include many other equivalent embodiments without departing from the concept of the present invention, the scope of which is determined by the scope of the appended claims.

Claims

1. A display panel, characterized in that, include: Drive substrate; A light-emitting element located on one side of the driving substrate; The light-emitting element includes a first type semiconductor, a second type semiconductor, and a light-emitting layer located between the first type semiconductor and the second type semiconductor; the first type semiconductor is located on the side of the light-emitting layer away from the driving substrate, and the first type semiconductor includes a main body portion and an extension portion at least partially surrounding the main body portion, the extension portion not overlapping with the second type semiconductor and the light-emitting layer; the extension portion is provided with a groove structure on the side near the driving substrate; An anti-reflective layer; the anti-reflective layer is at least partially located between the light-emitting elements; Along the first direction, the thickness of the extension is d, and the thickness of the first type of semiconductor is D, where d ≤ D; Wherein, the first direction is perpendicular to the plane where the driving substrate is located.

2. The display panel according to claim 1, characterized in that, The value of d ranges from 50% D to 80% D.

3. The display panel according to claim 2, characterized in that, The groove depth d1 of the groove structure ranges from 20% d to 50% d.

4. The display panel according to claim 3, characterized in that, The minimum value of the groove width 'a' of the groove structure is 1% d.

5. The display panel according to claim 1, characterized in that, Along the second direction, the maximum width of the main body portion projected onto the driving substrate is L, and the width of the extension portion projected onto the driving substrate is L0, satisfying L0≤L / 4; The second direction is parallel to the direction of the plane on which the driving substrate is located.

6. The display panel according to claim 5, characterized in that, The display panel includes a central display area and a display edge area surrounding the central display area; The light-emitting element includes a first light-emitting element located in the central area of ​​the display and a second light-emitting element located in the edge area of ​​the display, wherein the arrangement density of the first light-emitting element is greater than the arrangement density of the second light-emitting element; Along the second direction, the ratio of the width of the extension of the first light-emitting element projected onto the driving substrate to the maximum width of its main body projected onto the driving substrate is c1, and the ratio of the width of the extension of the second light-emitting element projected onto the driving substrate to the maximum width of its main body projected onto the driving substrate is c2, where c1 > c2.

7. The display panel according to claim 5, characterized in that, The light-emitting element includes a third light-emitting element and a fourth light-emitting element with different light-emitting colors; the area of ​​the main body of the third light-emitting element projected onto the driving substrate is larger than the area of ​​the main body of the fourth light-emitting element projected onto the driving substrate. Along the second direction, the ratio of the width of the extension of the third light-emitting element projected onto the driving substrate to the maximum width of its main body projected onto the driving substrate is c3, and the ratio of the width of the extension of the fourth light-emitting element projected onto the driving substrate to the maximum width of its main body projected onto the driving substrate is c4, where c3 < c4.

8. The display panel according to claim 1, characterized in that, It also includes a support structure that covers the main body and the extension of the light-emitting element; The thickness of the support structure is less than the thickness of the first type of semiconductor.

9. The display panel according to claim 8, characterized in that, The material of the supporting structure includes a transparent insulating material; The transmittance of the transparent insulating material is greater than that of the first type of semiconductor.

10. The display panel according to claim 1, characterized in that, The first type of semiconductor is located on the side of the light-emitting layer closer to the driving substrate.

11. The display panel according to claim 1, characterized in that, The groove structure is also located on at least a portion of the sidewall of the extension.

12. The display panel according to claim 1, characterized in that, The shape of the groove structure includes at least one of the following: a pointed groove, a rectangular groove, and a rounded rectangular groove.

13. A method for manufacturing a display panel, used to manufacture the display panel according to any one of claims 1-12, the method comprising: Provide driving substrate; Fabrication of light-emitting elements; The light-emitting element includes a first type semiconductor, a second type semiconductor, and a light-emitting layer located between the first type semiconductor and the second type semiconductor; the first type semiconductor includes a main body portion and an extension portion at least partially surrounding the main body portion, the extension portion not overlapping with the second type semiconductor and the light-emitting layer; the extension portion is provided with a groove structure on the side near the driving substrate; Transfer the light-emitting element to one side of the driving substrate; An anti-reflective layer is deposited on the surface of the driving substrate on which the light-emitting elements are located; the anti-reflective layer is at least partially located between the light-emitting elements.

14. A display device, characterized in that, Includes the display panel as described in any one of claims 1-12.

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