Chemical mechanical polishing apparatus and method for polishing indium phosphide using indium phosphide synthesis by-products

Abstract

The application provides a chemical mechanical polishing device and method for indium phosphide by using indium phosphide synthesis products, and relates to the technical field of semiconductor material processing. The chemical mechanical polishing device for indium phosphide by using indium phosphide synthesis products comprises a polishing system, a chemical polishing liquid injection system and a mechanical polishing liquid system. The polishing system comprises a main turntable, a rotating shaft, a main drive, an upper polishing disc and an upper driving motor. The chemical polishing liquid injection system comprises a high-temperature chamber, an injection pipe, a reaction tank and a liquid inlet pipe I. The mechanical polishing liquid system comprises a grinding liquid tank. In the application, the method is simple, red phosphorus formed by volatilization in the furnace after the indium phosphide synthesis reaction is used for polishing, and is directly used as a reactant for the chemical mechanical polishing of indium phosphide, so that energy is saved and the environment is protected. The problem that the red phosphorus formed by volatilization in the furnace after the indium phosphide synthesis reaction is difficult to handle, is flammable and is easy to pollute the environment is solved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor material processing technology, specifically to a chemical mechanical polishing apparatus and method for indium phosphide using indium phosphide synthesis products. Background Technology

[0002] Indium phosphide is a very important compound semiconductor and one of the preferred materials for fabricating high-frequency and high-speed devices. It is widely used in microelectronics and optoelectronics, such as optical communication, 5G networks, terahertz communication, millimeter-wave communication and detection.

[0003] Indium phosphide (IPS) is a soft and brittle material, making polishing difficult and prone to edge chipping, resulting in scratches on the wafer. IPS polishing solutions are typically used in a weakly acidic environment, causing the solution to decompose and release chlorine or bromine gas for chemical mechanical polishing. IPS manufacturers generally generate large amounts of unreacted intermediates or red phosphorus produced during the IPS growth process. Red phosphorus is flammable, and its combustion produces phosphorus gas that pollutes the environment, requiring subsequent environmental treatment, which is costly and causes significant problems for manufacturers.

[0004] Therefore, those skilled in the art have provided a chemical mechanical polishing apparatus and method for indium phosphide using indium phosphide synthesis products to solve the problems mentioned in the background art. Summary of the Invention

[0005] (a) Technical problems to be solved

[0006] To address the shortcomings of existing technologies, this invention provides a chemical mechanical polishing apparatus and method for indium phosphide using indium phosphide synthesis products. This solves the problem that general indium phosphide manufacturers produce large amounts of unreacted intermediates or red phosphorus generated during the indium phosphide growth process. Red phosphorus is flammable, and its combustion produces phosphorus gas that can pollute the environment, requiring further sanitation treatment, which is costly and causes significant trouble for manufacturers.

[0007] (II) Technical Solution

[0008] To achieve the above objectives, the present invention provides the following technical solution:

[0009] A chemical mechanical polishing apparatus for indium phosphide using indium phosphide synthesis products, characterized in that it comprises:

[0010] A polishing system includes a main turntable, a rotating shaft, a main drive, an upper polishing disc, and an upper transmission motor. A polishing pad is attached to the upper surface of the main turntable, and an upper polishing disc is provided at the upper end of the main turntable. An indium phosphide abrasive sheet is attached to the lower end of the upper polishing disc. The indium phosphide abrasive sheet is in contact with the polishing pad. The upper polishing disc is driven to rotate by the upper transmission motor to polish the indium phosphide abrasive sheet.

[0011] A chemical polishing slurry injection system includes a high-temperature chamber, an injection pipe, a reaction tank, and an inlet pipe I. A heater is installed outside the high-temperature chamber, and red phosphorus is placed inside. An air inlet I is located at the bottom of the high-temperature chamber, and a combustion chamber is connected to the upper part of the high-temperature chamber. An air inlet II is located on the side of the combustion chamber. The top of the combustion chamber is connected to the injection pipe, and the other end of the injection pipe is inserted into the chemical polishing solution contained in the reaction tank. The upper end of the reaction tank is connected to the inlet pipe I, and the lower end of the inlet pipe I is inserted into the chemical polishing solution contained in the reaction tank. A circulation pump I is installed in the middle of the inlet pipe I, and the other end of the inlet pipe I extends into the upper end of the main turntable.

[0012] Red phosphorus is heated by a heater, causing it to sublimate into P4 and P2 gases. Nitrogen gas flows through the gas and P4 and P2 gases into the combustion chamber. Oxygen is injected through intake port II. The oxygen reacts with the P4 and P2 gases, and the reactant, P2O5, is injected into the chemical polishing solution by the gas flow to make it acidic.

[0013] A mechanical polishing slurry system includes a polishing slurry tank containing polishing slurry. The upper end of the polishing slurry tank is connected to an inlet pipe II, which is equipped with a circulation pump II. The other end of the inlet pipe II extends into the upper end of the main turntable.

[0014] Furthermore, the main turntable is provided with a drain port, and the main turntable rotates in the opposite direction to the upper polishing disc.

[0015] Furthermore, a stirrer I is provided at the lower part of the reaction tank, and the stirrer I is connected to an external power source to rotate. A pH detector is provided inside the upper part of the reaction tank.

[0016] Furthermore, the test feedback from the pH detector can be linked with the air intake flow rate at the air inlet.

[0017] Furthermore, a stirrer II is provided at the bottom of the grinding slurry tank, and the stirrer II is connected to an external power source to rotate.

[0018] Furthermore, a chemical mechanical polishing method for indium phosphide using indium phosphide synthesis products, implemented using the aforementioned chemical mechanical polishing apparatus for indium phosphide, includes the following steps:

[0019] Step S1. Attach the indium phosphide polishing pad to the upper polishing disk and lay a polishing pad on the main turntable;

[0020] Step S2. Inject chemical polishing slurry into the reaction tank, then inject polishing slurry into the polishing slurry tank, and start the agitator I and agitator II at the bottom of the reaction tank and polishing slurry tank to stir the chemical polishing slurry and polishing slurry inside.

[0021] Step S3. Place the red phosphorus into the high-temperature chamber through air inlet I;

[0022] Step S4. Inject nitrogen gas into the high-temperature chamber through air inlet I;

[0023] Step S5. Start the heater to heat the high-temperature chamber, and use an infrared thermometer to measure the temperature at the bottom of the high-temperature chamber until the temperature reaches 590-650℃, so that the red phosphorus sublimates into P4 and P2 gases.

[0024] Step S6. Inject oxygen into the combustion chamber through intake port II. The oxygen reacts with P4 and P2 gases, and the reactant P2O5 is injected into the reaction tank by the airflow and mixed with the chemical polishing solution to make it acidic.

[0025] Step S7. Detect the pH value inside the reaction tank using a pH detector until the pH value reaches 2-5, then lower the upper polishing disc to make it contact the main rotating disc.

[0026] Step S8. Start circulation pump I and circulation pump II to allow the chemical polishing slurry and abrasive slurry to flow to the upper end of the polishing pad on the main turntable. Then start the upper drive motor to drive the polishing disc to rotate in the opposite direction to the main turntable to achieve the polishing operation.

[0027] Furthermore, the chemical polishing solution added to the reaction tank in step S2 is a sodium hypochlorite solution or a sodium hypobromite solution with a mass percentage of 5%-50%.

[0028] Furthermore, the flow rate of nitrogen at inlet I is greater than the flow rate of oxygen at inlet II, and the flow rate ratio of nitrogen to oxygen is adjusted to 11:10 to 2:1 based on the pH value of the reaction tank detected by a pH detector, with the flow rates of nitrogen and oxygen being 0.1-5 cm³. 2 / s, with nitrogen and oxygen pressures of 1.5-5 atm.

[0029] Furthermore, the pressure between the upper polishing disc and the main turntable is 0.1-10 kg / cm². 2 .

[0030] (III) Beneficial Effects

[0031] This invention provides a chemical mechanical polishing apparatus and method for indium phosphide using indium phosphide synthesis products. It has the following beneficial effects:

[0032] 1. This invention provides a chemical mechanical polishing apparatus and method for indium phosphide using indium phosphide synthesis products. Red phosphorus is heated in a high-temperature chamber to form phosphorus gas. The phosphorus gas enters a combustion chamber and burns to form phosphorus pentoxide, which is then injected into a chemical polishing solution to make it acidic. Once the pH value of the chemical polishing solution reaches the required level, the chemical polishing solution and polishing slurry simultaneously enter the polishing system for chemical mechanical polishing of the indium phosphide substrate. This method utilizes unreacted red phosphorus within the indium phosphide synthesis furnace for polishing, thus treating the remaining red phosphorus while simultaneously polishing indium phosphide, making it more energy-efficient and environmentally friendly.

[0033] 2. This invention provides a chemical mechanical polishing apparatus and method for indium phosphide using indium phosphide synthesis products. The method is simple and utilizes the red phosphorus volatilized in the furnace after the indium phosphide synthesis reaction to achieve polishing. It directly uses the red phosphorus as a reactant for the chemical mechanical polishing of indium phosphide, which is both energy-saving and environmentally friendly. It solves the problems of red phosphorus volatilized in the furnace after the indium phosphide synthesis reaction being difficult to handle, flammable, and polluting to the environment. Attached Figure Description

[0034] Figure 1 This is a schematic diagram of the chemical mechanical polishing apparatus for indium phosphide using indium phosphide synthesis products according to the present invention.

[0035] The components are as follows: 1. High-temperature chamber; 2. Red phosphorus; 3. Air inlet I; 4. Heater; 5. Injection pipe; 6. Reaction tank; 7. Chemical polishing solution; 8. Stirrer I; 9. pH detector; 10. Liquid inlet pipe I; 11. Circulation pump I; 12. Main turntable; 13. Polishing pad; 14. Rotating shaft; 15. Drain outlet; 16. Main drive; 17. Upper polishing disc; 18. Indium phosphide polishing disc; 19. Upper drive motor; 20. Circulation pump II; 21. Liquid inlet pipe II; 22. Polishing solution tank; 23. Polishing solution; 24. Stirrer II; 25. Combustion chamber; 26. Air inlet II. Detailed Implementation

[0036] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0037] Example:

[0038] As attached Figure 1 As shown, this embodiment of the invention provides a chemical mechanical polishing apparatus for indium phosphide using indium phosphide synthesis products, characterized in that it includes:

[0039] The polishing system includes a main turntable 12, a rotating shaft 14, a main drive 16, an upper polishing disc 17, and an upper drive motor 19. A polishing pad 13 is attached to the upper surface of the main turntable 12. An upper polishing disc 17 is provided at the upper end of the main turntable 12. An indium phosphide abrasive disc 18 is attached to the lower end of the upper polishing disc 17. The indium phosphide abrasive disc 18 is in contact with the polishing pad 13. The upper polishing disc 17 is driven to rotate by the upper drive motor 19 to polish the indium phosphide abrasive disc 18.

[0040] The chemical polishing slurry injection system includes a high-temperature chamber 1, an injection pipe 5, a reaction tank 6, and an inlet pipe I10. A heater 4 is installed outside the high-temperature chamber 1, and red phosphorus 2 is placed inside the high-temperature chamber 1. An air inlet I3 is installed at the bottom of the high-temperature chamber 1, and a combustion chamber 25 is connected to the upper part of the high-temperature chamber 1. An air inlet II26 is installed on the side of the combustion chamber 25. The top of the combustion chamber 25 is connected to the injection pipe 5. The other end of the injection pipe 5 is inserted into the chemical polishing solution 7 contained in the reaction tank 6. The upper end of the reaction tank 6 is connected to the inlet pipe I10, and the lower end of the inlet pipe I10 is inserted into the chemical polishing solution 7 contained in the reaction tank 6. A circulation pump I11 is installed in the middle of the inlet pipe I10, and the other end of the inlet pipe I10 extends into the upper end of the main turntable 12.

[0041] The red phosphorus 2 is heated by heater 4, causing it to sublimate into P4 and P2 gases. The nitrogen flow causes the P4 and P2 gases to enter the combustion chamber 25. Oxygen is injected through the air inlet II 26. The oxygen reacts with the P4 and P2 gases, and the reactant, P2O5, is injected into the chemical polishing solution 7 by the air flow to make it acidic.

[0042] The mechanical polishing slurry system includes a polishing slurry tank 22, which contains polishing slurry 23. The upper end of the polishing slurry tank 22 is connected to an inlet pipe II21, which is equipped with a circulation pump II20. The other end of the inlet pipe II21 extends into the upper end of the main turntable 12.

[0043] The reaction tank 6 uses the circulation pump I11 to inject the chemical polishing solution 7 into the main turntable 12 through the inlet pipe I10. The grinding slurry tank 22 uses the circulation pump II20 to inject the grinding slurry tank 22 into the main turntable 12 through the inlet pipe II21. During the polishing process, the chemical polishing slurry injection system and the mechanical polishing slurry system continuously inject the chemical polishing slurry 7 and the grinding slurry 23 into the polishing pad 13, thereby achieving chemical mechanical polishing.

[0044] The main turntable 12 is provided with a drain port 15, and the rotation direction of the main turntable 12 is opposite to that of the upper polishing disc 17.

[0045] A stirrer I8 is installed at the bottom of the reaction tank 6. The stirrer I8 is connected to an external power source to rotate. A pH detector 9 is installed inside the upper part of the reaction tank 6.

[0046] The test feedback from pH detector 9 can be linked with the air intake flow rate of air inlet I3.

[0047] A stirrer II24 is installed at the bottom of the grinding slurry tank 22. The stirrer II24 is connected to an external power source to rotate.

[0048] A modified chemical mechanical polishing method for indium phosphide, utilizing indium phosphide synthesis products and based on the aforementioned chemical mechanical polishing apparatus for indium phosphide, includes the following steps:

[0049] Step S1. Attach the indium phosphide polishing pad 18 to the upper polishing disk 17 and lay the polishing pad 13 on the main turntable 12;

[0050] Step S2. Inject chemical polishing liquid 7 into reaction tank 6, and then inject polishing liquid 23 into polishing liquid tank 22. Start the stirrer I8 and stirrer II24 at the bottom of reaction tank 6 and polishing liquid tank 22 to stir the chemical polishing liquid 7 and polishing liquid 23 inside.

[0051] Step S3. Place red phosphorus 2 into high-temperature chamber 1 through air inlet I3;

[0052] Step S4. Inject nitrogen gas into the high-temperature chamber 1 through the air inlet I3;

[0053] Step S5. Start heater 4 to heat chamber 1, and use an infrared thermometer to measure the temperature at the bottom of chamber 1 until the temperature reaches 590-650℃, so that red phosphorus 2 sublimates into P4 and P2 gases.

[0054] Step S6. Inject oxygen into combustion chamber 25 through air inlet II26. The oxygen reacts with P4 and P2 gases, and the reactant P2O5 is injected into reaction tank 6 by airflow and mixed with chemical polishing solution 7 to make it acidic.

[0055] Step S7. Detect the pH value inside the reaction tank 6 using the pH value detector 9 until the pH value reaches 2-5, then lower the upper polishing disk 17 to make it contact the main rotating disk 12.

[0056] Step S8. Start the circulation pump I11 and circulation pump II20 to make the chemical polishing liquid 7 and the grinding liquid 23 flow to the upper end of the polishing pad 13 on the main turntable 12. Then start the upper drive motor 19 to drive the polishing disk 17 to rotate in the opposite direction to the main turntable 12 to realize the polishing operation.

[0057] In step S2, the chemical polishing solution 7 added to the reaction tank 6 is a sodium hypochlorite solution or sodium hypobromite solution with a mass percentage of 5%-50%.

[0058] The flow rate of nitrogen at inlet I3 is greater than that of oxygen at inlet II26. The nitrogen and oxygen flow rates are adjusted to a ratio of 11:10 to 2:1 based on the pH value detected by pH detector 9 in reaction tank 6, with each nitrogen and oxygen flow rate being 0.1-5 cm³. 2 / s, with nitrogen and oxygen pressures of 1.5-5 atm.

[0059] The pressure between the upper polishing disc 17 and the main turntable 12 is 0.1-10 kg / cm². 2 .

[0060] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. An apparatus for chemical mechanical polishing using indium phosphide synthesis products, characterized in that, include: The polishing system includes a main turntable (12), a rotating shaft (14), a main drive (16), an upper polishing disc (17), and an upper transmission motor (19). A polishing pad (13) is attached to the upper surface of the main turntable (12). An upper polishing disc (17) is provided at the upper end of the main turntable (12). An indium phosphide abrasive disc (18) is attached to the lower end of the upper polishing disc (17). The indium phosphide abrasive disc (18) is in contact with the polishing pad (13). The upper polishing disc (17) is driven to rotate by the upper transmission motor (19) to polish the indium phosphide abrasive disc (18). A chemical polishing solution injection system is provided, comprising a high-temperature chamber (1), an injection pipe (5), a reaction tank (6), and an inlet pipe I (10). A heater (4) is installed outside the high-temperature chamber (1), and red phosphorus (2) is placed inside the high-temperature chamber (1). An air inlet I (3) is provided at the bottom of the high-temperature chamber (1), and a combustion chamber (25) is connected to the upper part of the high-temperature chamber (1). An air inlet II (26) is provided on the side of the combustion chamber (25). The red phosphorus (2) is heated by the heater (4), causing it to sublimate into P4 and P2 gases. A nitrogen flow causes the P4 and P2 gases to enter the combustion chamber (25) and pass through the air inlet II. (26) Inject oxygen, which reacts with P4 and P2 gases. The reactant, P2O5, is injected into the chemical polishing solution (7) by the gas flow to make it acidic. The top of the combustion chamber (25) is connected to the injection pipe (5). The other end of the injection pipe (5) is inserted into the chemical polishing solution (7) inside the reaction tank (6). The upper end of the reaction tank (6) is connected to the liquid inlet pipe I (10), and the lower end of the liquid inlet pipe I (10) is inserted into the chemical polishing solution (7) inside the reaction tank (6). A circulation pump I (11) is installed in the middle of the liquid inlet pipe I (10), and the other end of the liquid inlet pipe I (10) extends into the upper end of the main turntable (12). The mechanical polishing slurry system includes a polishing slurry tank (22), which contains polishing slurry (23). The upper end of the polishing slurry tank (22) is connected to an inlet pipe II (21), which is equipped with a circulation pump II (20). The other end of the inlet pipe II (21) extends into the upper end of the main turntable (12).

2. The apparatus for chemical mechanical polishing using indium phosphide synthesis products according to claim 1, characterized in that: The main turntable (12) is provided with a drain port (15), and the rotation direction of the main turntable (12) is opposite to that of the upper polishing disc (17).

3. The apparatus for chemical mechanical polishing using indium phosphide synthesis products according to claim 1, characterized in that: A stirrer I (8) is provided at the lower part of the reaction tank (6). The stirrer I (8) is connected to an external power source to rotate. A pH detector (9) is provided inside the upper part of the reaction tank (6).

4. The apparatus for chemical mechanical polishing using indium phosphide synthesis products according to claim 3, characterized in that: The test feedback of the pH detector (9) can be linked with the air intake flow of the air inlet I (3).

5. The apparatus for chemical mechanical polishing using indium phosphide synthesis products according to claim 1, characterized in that: A stirrer II (24) is provided at the lower part of the grinding slurry pool (22), and the stirrer II (24) is connected to an external power source to rotate.

6. A method for chemical mechanical polishing using indium phosphide synthesis products, characterized in that, The method is based on the apparatus for chemical mechanical polishing using indium phosphide synthesis products as described in any one of claims 1-5, and includes the following steps: Step S1. Attach the indium phosphide polishing pad (18) to the upper polishing disk (17) and lay the polishing pad (13) on the main turntable (12). Step S2. Inject chemical polishing solution (7) into reaction tank (6), and then inject polishing liquid (23) into polishing liquid tank (22). Start the stirrer I (8) and stirrer II (24) at the bottom of reaction tank (6) and polishing liquid tank (22) to stir the chemical polishing solution (7) and polishing liquid (23) inside. Step S3. Put red phosphorus (2) into the high-temperature chamber (1) through the air inlet I (3); Step S4. Inject nitrogen into the high-temperature chamber (1) through the air inlet I (3); Step S5. Start the heater (4) to heat the high-temperature chamber (1), and use an infrared thermometer to test the temperature at the bottom of the high-temperature chamber (1) until the temperature reaches 590-650℃, so that the red phosphorus (2) sublimates into P4 and P2 gases; Step S6. Inject oxygen into the combustion chamber (25) through the air inlet II (26). The oxygen reacts with P4 and P2 gases, and the reactant P2O5 is injected into the reaction pool (6) by the airflow and mixed with the chemical polishing solution (7) to make it acidic. Step S7. Detect the pH value inside the reaction tank (6) using a pH detector (9) until the pH value reaches 2-5, then lower the upper polishing disc (17) to make it contact the main rotating disc (12); Step S8. Start circulation pump I (11) and circulation pump II (20) so that the chemical polishing solution (7) and polishing liquid (23) flow to the upper end of the polishing pad (13) on the main turntable (12). Then start the upper drive motor (19) to drive the upper polishing disk (17) to rotate in the opposite direction to the main turntable (12) to achieve the polishing operation.

7. The method for chemical mechanical polishing using indium phosphide synthesis products according to claim 6, characterized in that: The chemical polishing solution (7) added to the reaction tank (6) in step S2 is a sodium hypochlorite solution or sodium hypobromite solution with a mass percentage of 5%-50%.

8. The method for chemical mechanical polishing using indium phosphide synthesis products according to claim 6, characterized in that: The flow rate of nitrogen at inlet I (3) is greater than the flow rate of oxygen at inlet II (26). The flow rate ratio of nitrogen to oxygen is adjusted to 11:10 to 2:1 based on the pH value of the reaction tank (6) detected by pH detector (9), and the flow rates of nitrogen and oxygen are 0.1-5 cm. 2 / s, with nitrogen and oxygen pressures of 1.5-5 atm.

9. The method for chemical mechanical polishing using indium phosphide synthesis products according to claim 6, characterized in that: The pressure between the upper polishing disc (17) and the main turntable (12) is 0.1-10 kg / cm². 2 .

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