A substrate structure, target system and preparation method thereof

By designing a honeycomb structure and guide holes on the target system substrate and preparing a multi-layer gradient hydrogen diffusion layer in the through-hole, the problems of slow hydrogen diffusion and poor binding force during the use of the lithium target are solved, and the service life and reliability of the target system are improved.

CN118591072BActive Publication Date: 2025-09-09HUABORON NEUTRON TECH (HANGZHOU) CO LTD
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Patent Information

Application Number
CN202410505433.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2023-07-13
Filing Date
2024-04-25
Publication Date
2025-09-09
Estimated Expiration
2044-04-25

AI Technical Summary

Technical Problem

During use, existing lithium targets produce hydrogen, helium and other gases due to nuclear reactions between protons and lithium, which causes bubbling or peeling of the target material. The hydrogen diffusion rate is slow, which affects the service life of the lithium target. In addition, the traditional substrate structure has poor bonding with the hydrogen diffusion layer, and the hydrogen diffusion is insufficient, resulting in a short service life of the target system.

Method used

The upper surface of the substrate of the designed target system has a honeycomb structure, with guide holes set between the through holes, and hydrogen diffusion layers prepared layer by layer inside the through holes. High hydrogen storage and high hydrogen diffusion rate materials are used. The hydrogen diffusion layer has a multi-layer gradient structure with strong bonding force and fast hydrogen diffusion speed. The target system is prepared by methods such as laser sintering and evaporation.

Benefits of technology

The method significantly improves the diffusion rate of hydrogen, enhances the bonding force between the hydrogen diffusion layer and the substrate, reduces the probability of film peeling and bubbling, and extends the service life of the target system. The preparation method is simple and controllable.

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Abstract

The present invention relates to the field of nuclear technology and discloses a substrate structure, a target system, and a method for preparing the same. The target system comprises a substrate having a honeycomb-like upper surface. Several flow guide holes are provided at the junctions between adjacent through-holes in the honeycomb structure. Each through-hole is sequentially arranged, from bottom to top, within a hydrogen diffusion layer, a target material layer, and an oxidation mitigation layer. By optimizing the substrate structure of the target system, the present invention accelerates the diffusion rate of hydrogen released during nuclear reactions in the target material layer, thereby significantly improving the service life of the target system.
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Description

Technical Field

[0001] The present invention relates to the field of nuclear technology, and in particular to a substrate structure, a target system and a preparation method thereof. Background Art

[0002] Accelerator-driven boron neutron capture therapy provides a new approach for the precise treatment of malignant tumors. The main purpose of the accelerator-based boron neutron capture therapy system is to provide a compact neutron source that meets the requirements of cancer treatment. Ideally, the neutron source used for cancer treatment should produce a monoenergetic neutron beam with an energy of about 10 keV. This monoenergetic neutron beam can be based on 7 Li(p,n) 7 However, the mechanical, chemical, and thermal properties of lithium metal face certain challenges when used in targets. In particular, during the use of existing lithium targets, protons react with lithium to produce neutrons and hydrogen, helium, etc. The production of hydrogen, helium, etc. will cause bubbling or peeling of the target material. Therefore, the existing technology generally sets a hydrogen diffusion layer to guide the diffusion of hydrogen. However, the hydrogen diffusion rate is slow and bubbles are easily formed, which seriously affects the service life of the lithium target.

[0003] In addition, similar target systems currently use more traditional disc-shaped substrates, such as the most commonly used copper sheet. The upper surface of such substrates is usually flat, which has the disadvantages of poor bonding with the hydrogen diffusion layer and poor structural design during use. As a result, the service life of the current target system is relatively short. To this end, in the prior art, before coating the substrate surface, the substrate is usually subjected to surface treatment (such as chemical etching, sandblasting, etc.) to increase the roughness and specific surface area, thereby improving the film-base bonding strength. However, the effect is still relatively limited, and this method cannot effectively accelerate the diffusion of hydrogen. Therefore, how to improve the service life of the target system by optimizing its structure is a topic worthy of in-depth research. Summary of the Invention

[0004] To address the above technical issues, the present invention provides a substrate structure, a target system, and a method for preparing the same. By optimizing the target system's substrate structure, the present invention accelerates the diffusion of hydrogen released during nuclear reactions in the target layer, significantly extending the target system's service life.

[0005] The specific technical solutions of the present invention are:

[0006] In a first aspect, the present invention provides a target system, comprising a substrate, the upper surface of which is a honeycomb structure, wherein a plurality of guide holes are provided at the junctions between adjacent through holes in the honeycomb structure, and a hydrogen diffusion layer and a target material layer are sequentially provided in each through hole from bottom to top.

[0007] The present invention designs the upper surface of the substrate of the target system into a honeycomb structure, and a plurality of guide holes are designed at the junctions between adjacent through holes in the honeycomb structure. When a nuclear reaction occurs in the target material layer (such as a lithium target) and hydrogen is released, the hydrogen can enter the guide holes, thereby accelerating the discharge of hydrogen, increasing the diffusion rate of hydrogen, and extending the service life of the target system.

[0008] Preferably, the cross section of the through hole is an n-gonal structure, wherein n≥3.

[0009] More preferably, the side length of the n-gonal structure is from several micrometers to several thousand micrometers.

[0010] Preferably, the guide hole is a circular hole, a quasi-circular hole or a polygonal hole.

[0011] Further preferably, the pore size of the guide holes is in the micrometer or nanometer level.

[0012] Preferably, the hydrogen diffusion layer is based on a material with high hydrogen storage and high hydrogen diffusion rate, and the same elements as the substrate material are dispersed in the matrix; the hydrogen diffusion coefficient of the material with high hydrogen storage and high hydrogen diffusion rate is at least 10,000 times that of the substrate material, which can be expressed as:

[0013]

[0014] Where D is the hydrogen diffusion coefficient of the hydrogen diffusion layer material, D 基 is the hydrogen diffusion coefficient of the substrate material.

[0015] More preferably, the content of the same element as the substrate material in the hydrogen diffusion layer gradually decreases from bottom to top.

[0016] The present invention designs the hydrogen diffusion layer of the target system into a multi-layer gradient structure with different element ratios, which can significantly improve the bonding strength between the hydrogen diffusion layer and the substrate, and also facilitate the diffusion and migration of hydrogen, greatly reducing the probability of film peeling and bubbling, and further extending the service life of the target system.

[0017] Preferably, the material with high hydrogen storage and high hydrogen diffusion rate is one or more alloys of tantalum, vanadium, palladium, niobium, platinum, tungsten and oxides thereof.

[0018] Preferably, the substrate is made of copper.

[0019] Preferably, the target layer is a lithium layer or a beryllium layer.

[0020] Preferably, an oxidation mitigation layer is provided on the top of the target material layer in the through hole.

[0021] The oxidation mitigation layer is used to mitigate oxidation of the target layer material (eg, lithium).

[0022] More preferably, the oxidation mitigation layer is made of TiN, Ti, Nb and / or metal compounds thereof.

[0023] In a second aspect, the present invention provides a method for preparing a target system, comprising the following steps:

[0024] 1) Constructing a honeycomb structure and diversion holes on the upper surface of the substrate;

[0025] 2) preparing a hydrogen diffusion layer layer by layer in the through holes of the honeycomb structure by laser sintering;

[0026] 3) preparing a target material layer and an oxidation mitigation layer in sequence to obtain a target system.

[0027] Preferably, step 2) specifically includes: filling the high hydrogen storage and high hydrogen diffusion rate material into the through hole in multiple times, and performing laser sintering after each filling; then using evaporation or sputtering coating or vacuum hot pressing to press-inject several layers of high hydrogen storage and high hydrogen diffusion rate material into the through hole to obtain a hydrogen diffusion layer.

[0028] Further preferably, in step 2), the laser power of the previous sintering is greater than the laser power of the subsequent sintering; in the hydrogen diffusion layer finally obtained, from bottom to top, the content of elements with the same material as the substrate gradually decreases, and the content of high hydrogen storage and high hydrogen diffusion rate materials gradually increases.

[0029] Since laser sintering causes the substrate material to melt, it then mixes and melts with the high hydrogen storage and high hydrogen diffusion rate materials, and coexists after solidification. The lower the laser power, the less substrate material is melted, and the lower the doping amount.

[0030] More preferably, the laser power C during laser sintering of the current layer is t =200W+20W*(nC C ), where n is the total number of sintered layers, C C The present invention has found that controlling the power of the two laser sintering operations according to the above formula can achieve better results.

[0031] More preferably, the total number of sintered layers is 2-10.

[0032] Preferably, a target material layer is evaporated or hot-pressed on the surface of the hydrogen diffusion layer.

[0033] Compared with the prior art, the present invention has the following beneficial effects:

[0034] (1) The present invention designs the upper surface of the substrate of the target system into a honeycomb structure, and a plurality of guide holes are designed at the junctions between adjacent through holes in the honeycomb structure. When a nuclear reaction occurs in the target material layer and hydrogen is released, the hydrogen can enter the guide holes, thereby accelerating the discharge of hydrogen and increasing the diffusion rate of hydrogen. Therefore, the hydrogen diffusion layer is not prone to bubble formation, thereby increasing the service life of the target system.

[0035] (2) The present invention designs the hydrogen diffusion layer of the target system into a multi-layer gradient structure with different element ratios from bottom to top, which can significantly improve the bonding force between the hydrogen diffusion layer and the substrate, and also facilitate the diffusion and migration of hydrogen, greatly reducing the probability of film peeling and bubbling, and further extending the service life of the target system.

[0036] (3) The preparation method of the target system of the present invention is simple, the structure is controllable, and it is easy to implement. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 A schematic diagram of the structure of the target system of the present invention (the left side is a top view, and the right side is a schematic diagram of the distribution of the guide holes); Figure 2 This is a schematic diagram of the structure of the through hole in the target system of the present invention (the left side of the figure is a perspective structural diagram of the through hole, and the right side is a schematic diagram of the distribution of the guide holes). DETAILED DESCRIPTION

[0038] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only embodiments of a part of the present invention, not all embodiments, and are not intended to limit the scope of the present invention. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessary confusion of the concepts disclosed in the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work should fall within the scope of protection of the present invention.

[0039] The accompanying drawings illustrate schematic diagrams of the structures of the disclosed embodiments of the present invention. These figures are not drawn to scale; for the purpose of clarity, some details are exaggerated and some details may be omitted. The shapes of the various regions and layers shown in the figures, as well as their relative sizes and positional relationships, are merely exemplary and may deviate in practice due to manufacturing tolerances or technical limitations. Those skilled in the art may design regions / layers with different shapes, sizes, and relative positions as needed.

[0040] Overall embodiment

[0041] A target system includes a substrate, such as Figure 1As shown, the upper surface of the substrate is a honeycomb structure, further as shown Figure 2 As shown, a plurality of guide holes are provided at the junctions between adjacent through holes in the honeycomb structure, and a hydrogen diffusion layer, a target material layer and an oxidation mitigation layer are sequentially provided in each through hole from bottom to top.

[0042] In some specific implementation cases, the cross-section of the through hole is an n-gonal structure, where n≥3.

[0043] In some more preferred implementation cases, the side length of the n-gon structure is from several micrometers to several thousand micrometers.

[0044] In some specific implementation cases, the guide hole is a circular hole, a quasi-circular hole or a polygonal hole.

[0045] In some more preferred implementation cases, the pore size of the flow guide holes is in the micrometer or nanometer scale.

[0046] In some specific implementation cases, the hydrogen diffusion layer is based on a high hydrogen storage and high hydrogen diffusion rate material, and the same elements as the substrate material are dispersed in the matrix; the hydrogen diffusion coefficient of the high hydrogen storage and high hydrogen diffusion rate material is at least 10,000 times the hydrogen diffusion coefficient of the substrate material, which can be expressed as:

[0047]

[0048] Where D is the hydrogen diffusion coefficient of the hydrogen diffusion layer material, D 基 is the hydrogen diffusion coefficient of the substrate material.

[0049] In some more preferred implementation cases, the content of the same element as the substrate material in the hydrogen diffusion layer gradually decreases from bottom to top.

[0050] In some specific implementation cases, the high hydrogen storage and high hydrogen diffusion rate material is one or more alloys of tantalum, vanadium, palladium, niobium, platinum, tungsten and their oxides.

[0051] In some specific implementation cases, the substrate is made of copper.

[0052] In some specific implementation cases, the target layer is a lithium layer or a beryllium layer.

[0053] In some specific implementation cases, the material of the oxidation mitigation layer is TiN, Ti, Nb and / or metal compounds thereof.

[0054] A method for preparing a target system comprises the following steps:

[0055] 1) Constructing a honeycomb structure and diversion holes on the upper surface of the substrate;

[0056] 2) preparing hydrogen diffusion layers layer by layer in the through holes of the honeycomb structure;

[0057] 3) preparing a target material layer and an oxidation mitigation layer in sequence to obtain a target system.

[0058] In some specific implementation cases, step 2) specifically includes: filling the high hydrogen storage and high hydrogen diffusion rate material into the through hole in multiple times, and performing laser sintering after each filling; wherein the laser power of the previous sintering is greater than the laser power of the subsequent sintering; then using evaporation or sputtering coating or vacuum hot pressing to press-inject several layers of high hydrogen storage and high hydrogen diffusion rate material into the through hole to obtain a hydrogen diffusion layer; wherein, from bottom to top, the content of the element same as the substrate material in the hydrogen diffusion layer gradually decreases, and the content of the high hydrogen storage and high hydrogen diffusion rate material gradually increases.

[0059] In some more preferred embodiments, the laser power C during laser sintering of the current layer is t =200W+20W*(nC C ), where n is the total number of sintered layers (n is preferably 2-10), C C is the number of layers currently sintered.

[0060] In some specific implementation cases, a target material layer is evaporated or hot-pressed on the surface of the hydrogen diffusion layer.

[0061] In some specific implementation cases, before constructing the honeycomb structure and the guide holes on the upper surface of the substrate in step 1), the upper surface of the substrate is first laser-treated in an inert gas (preferably argon) atmosphere to increase the surface roughness of the substrate, and then ultrasonic cleaning is performed to remove residual contaminants such as powder on the surface of the substrate.

[0062] Specific Examples and Comparative Examples

[0063] Example 1 (Non-gradient design of copper content in hydrogen diffusion layer)

[0064] A target system includes a circular substrate (20 cm in diameter and 0.8 cm in thickness), such as Figure 1 As shown, the upper surface of the substrate presents a honeycomb structure, which is composed of a number of columnar through holes perpendicular to the thickness direction of the substrate. Figure 2 As shown, between these adjacent columnar through holes, there are several guide holes distributed at their intersections, and each through hole contains a hydrogen diffusion layer, a target material layer and an oxidation mitigation layer from bottom to top. Specifically:

[0065] Regarding size and shape: Figure 1 As shown, the cross section of the through hole is a hexagonal structure with a side length of about 1000 microns. The flow guide hole is a circular structure with a pore diameter of about 100 nanometers.

[0066] Regarding materials: the substrate is made of copper; the hydrogen diffusion layer is based on a material with high hydrogen storage and high hydrogen diffusion rate, tantalum being used in this embodiment, and copper is evenly dispersed in the matrix; the target layer is a lithium layer; and the oxidation mitigation layer is made of TiN.

[0067] The method for preparing the target system comprises the following steps:

[0068] 1) The upper surface of the substrate is first subjected to laser treatment in an argon atmosphere to increase the surface roughness of the substrate, and then ultrasonic cleaning is performed to remove residual contaminants such as powder on the surface of the substrate.

[0069] 2) A honeycomb structure and flow guide holes are constructed on the upper surface of the substrate through a laser processing process.

[0070] 3) A hydrogen diffusion layer is prepared layer by layer in the through-holes of the honeycomb structure by laser sintering, specifically comprising: first laying a layer of tantalum powder in the through-hole, then performing laser sintering, laying another layer of tantalum powder, and then performing laser sintering again. The laser power for each sintering is 280 W, and the sintering is performed 5 times; subsequently, several layers of pure tantalum are injected into the through-holes of the honeycomb structure by vapor deposition to obtain a hydrogen diffusion layer.

[0071] 4) a lithium layer is evaporated on the surface of the hydrogen diffusion layer; finally, in order to alleviate the oxidation of lithium, a TiN coating is prepared by a vacuum diffusion welding method as an oxidation mitigation layer.

[0072] Example 2 (the copper content in the hydrogen diffusion layer decreases layer by layer from bottom to top)

[0073] A target system includes a circular substrate (20 cm in diameter and 0.8 cm in thickness), such as Figure 1 As shown, the upper surface of the substrate presents a honeycomb structure, which is composed of a number of columnar through holes perpendicular to the thickness direction of the substrate. Figure 2 As shown, between these adjacent columnar through holes, there are several guide holes distributed at their intersections, and each through hole contains a hydrogen diffusion layer, a target material layer and an oxidation mitigation layer from bottom to top. Specifically:

[0074] Regarding size and shape: Figure 1 As shown, the cross section of the through hole is a hexagonal structure with a side length of about 1000 microns. The flow guide hole is a circular structure with a pore diameter of about 100 nanometers.

[0075] Regarding materials: The substrate is made of copper; the hydrogen diffusion layer is based on tantalum, with copper evenly dispersed within the matrix, and the copper content in the hydrogen diffusion layer decreases from bottom to top. The target layer is a lithium layer; and the oxidation mitigation layer is made of TiN.

[0076] The method for preparing the target system comprises the following steps:

[0077] 1) The upper surface of the substrate is first subjected to laser treatment in an argon atmosphere to increase the surface roughness of the substrate, and then ultrasonic cleaning is performed to remove residual contaminants such as powder on the surface of the substrate.

[0078] 2) A honeycomb structure and flow guide holes are constructed on the upper surface of the substrate through a laser processing process.

[0079] 3) A hydrogen diffusion layer is prepared layer by layer in the through-holes of the honeycomb structure by laser sintering, specifically: first, a layer of tantalum powder is laid in the through-hole, then laser sintered, then another layer of tantalum powder is laid, then laser sintered again, for a total of 5 sinterings. The laser power C during laser sintering of the current layer is t =200W+20W*(5-C C ), where C C The laser power is 280W for the first laser sintering pass, 260W for the second, 240W for the third, 220W for the fourth, and 200W for the fifth. As the number of tantalum layers increases, the laser power decreases, and the ratio of copper atoms to tantalum atoms decreases. When the number of tantalum layers exceeds five, the copper content is very low. Subsequently, several layers of pure tantalum are injected into the through-holes of the honeycomb structure using vapor deposition.

[0080] 4) a lithium layer is evaporated on the surface of the hydrogen diffusion layer; finally, in order to alleviate the oxidation of lithium, a TiN coating is prepared by a vacuum diffusion welding method as an oxidation mitigation layer.

[0081] Comparative Example 1 (using traditional wafer-type substrate)

[0082] The target system in this comparative example utilizes a conventional wafer-shaped substrate. Specifically, the target system comprises a circular substrate (20 cm in diameter and 0.8 cm thick) with a flat top surface. A hydrogen diffusion layer, a target layer, and an oxidation mitigation layer are sequentially deposited on the substrate. Specifically, the substrate is made of copper; the hydrogen diffusion layer is made of tantalum; the target layer is made of lithium; and the oxidation mitigation layer is made of TiN.

[0083] Comparative Example 2 (the difference from Example 1 is that the substrate is only provided with a honeycomb structure but no guide holes are provided)

[0084] A target system includes a circular substrate (20 cm in diameter and 0.8 cm in thickness), the upper surface of which exhibits a honeycomb structure consisting of a plurality of columnar through-holes perpendicular to the thickness direction of the substrate, each of which contains, from bottom to top, a hydrogen diffusion layer, a target material layer, and an oxidation mitigation layer. Specifically:

[0085] Regarding size and shape: the cross-section of the through hole is a hexagonal structure, and the side length is about 1000 microns.

[0086] Regarding materials: the material of the above-mentioned substrate is copper; the above-mentioned hydrogen diffusion layer is based on tantalum, and copper is evenly dispersed in the matrix; the above-mentioned target layer is a lithium layer; the material of the above-mentioned oxidation mitigation layer is TiN.

[0087] The method for preparing the target system comprises the following steps:

[0088] 1) The upper surface of the substrate is first subjected to laser treatment in an argon atmosphere to increase the surface roughness of the substrate, and then ultrasonic cleaning is performed to remove residual contaminants such as powder on the surface of the substrate.

[0089] 2) A honeycomb structure is constructed on the upper surface of the substrate through a laser processing process.

[0090] 3) A hydrogen diffusion layer is prepared layer by layer in the through-holes of the honeycomb structure by laser sintering, specifically comprising: first laying a layer of tantalum powder in the through-hole, then performing laser sintering, laying another layer of tantalum powder, and then performing laser sintering again. The laser power for each sintering is 280 W, and the sintering is performed 5 times; subsequently, several layers of pure tantalum are injected into the through-holes of the honeycomb structure by vapor deposition to obtain a hydrogen diffusion layer.

[0091] 4) a lithium layer is evaporated on the surface of the hydrogen diffusion layer; finally, in order to alleviate the oxidation of lithium, a TiN coating is prepared by a vacuum diffusion welding method as an oxidation mitigation layer.

[0092] Performance Testing

[0093] (1) Hydrogen diffusion ability test method: COMSOL Multiphysics finite element software was used to model the structures in each embodiment and comparative example, and the hydrogen diffusion performance of the target structure was calculated using the dilute species transfer physics field. The maximum hydrogen atom concentration in the structure was used as an indicator for analysis.

[0094] (2) Hydrogen diffusion layer stress test method: The hydrogen diffusion layer stress is tested using a probe profilometer.

[0095] The test data of each embodiment and comparative example are shown in the following table:

[0096] Experimental group Honeycomb structure of substrate Substrate guide holes Multi-gradient hydrogen diffusion layer Maximum hydrogen atomic concentration Hydrogen diffusion layer stress Example 1 yes yes no <![CDATA[9.5×10 3 mol·m -3 ]]> 14.89Gpa Example 2 yes yes yes <![CDATA[8.3×10 3 mol·m -3 ]]> 11.19Gpa Comparative Example 1 no no no <![CDATA[4.8×10 4 mol·m -3 ]]> 32.53Gpa Comparative Example 2 yes no no <![CDATA[1.2×10 4 mol·m -3 ]]> 15.19Gpa

[0097] From the data analysis in the above table, we can see that:

[0098] The maximum hydrogen atom concentration is used to evaluate the hydrogen diffusion capacity. The substrate of Comparative Example 1 is a conventional wafer-type substrate. The substrate of Comparative Example 2 is provided with a honeycomb structure but no guide holes are provided. In contrast, Example 1 adopts a honeycomb structure and is provided with guide holes. From the data comparison, it can be seen that the honeycomb structure can significantly improve the hydrogen diffusion capacity. The 4.8×10 4 mol·m -3 Reduced to 9.5×10 3 mol·m -3 Although a honeycomb structure is provided in Comparative Example 2, the lack of guide holes results in hydrogen atoms gathering in a single honeycomb structure, and the local hydrogen atom concentration increases to 1.2×10 4 mol·m -3 , the hydrogen diffusion capacity is even worse than that of Comparative Example 1; further, compared with Example 1, Example 2 further designs the hydrogen diffusion layer into a multi-gradient structure (i.e., the copper content decreases from bottom to top) on the basis of Example 1, so that the total copper doping amount in the hydrogen diffusion layer of Example 2 is lower than that of Example 1 (excessive copper content is not conducive to hydrogen diffusion), thereby further improving the hydrogen diffusion capacity.

[0099] The stress of the hydrogen diffusion layer is used to evaluate the interlayer bonding force, which can reflect the probability of film peeling and bubbling, and further evaluate the service life of the target system. Comparative Example 1 uses a traditional wafer-type substrate, and the maximum internal stress of the hydrogen diffusion layer is 32.53GPa, which easily causes the hydrogen diffusion layer to rupture and damage. After adding a honeycomb structure (Examples 1, 2 and Comparative Example 2), due to the formation of microstructures and roughness on the surface, the time to generate a continuous structure is slowed down, which can reduce the internal stress of the hydrogen diffusion layer to a certain extent. Among them, Example 2 is compared with Example 1 and Comparative Example 2. Compared with Example 1 and Comparative Example 2, the hydrogen diffusion layer is further designed as a multi-gradient structure (that is, the copper content decreases from bottom to top). The structure shows that this design can further significantly reduce the stress of the hydrogen diffusion layer.

[0100] Example 3

[0101] A target system includes a circular substrate (20 cm in diameter and 0.8 cm in thickness), such as Figure 1 As shown, the upper surface of the substrate presents a honeycomb structure, which is composed of a number of columnar through holes perpendicular to the thickness direction of the substrate. Figure 2 As shown, between these adjacent columnar through holes, there are several guide holes distributed at their intersections, and each through hole contains a hydrogen diffusion layer, a target material layer and an oxidation mitigation layer from bottom to top. Specifically:

[0102] Regarding size and shape: Figure 1As shown, the cross section of the through hole is a hexagonal structure with a side length of about 1000 microns. The flow guide hole is a circular structure with a pore diameter of about 100 nanometers.

[0103] Regarding materials: The substrate is made of copper; the hydrogen diffusion layer is based on tantalum, with copper evenly dispersed within the matrix, and the copper content in the hydrogen diffusion layer decreases from bottom to top. The target layer is a lithium layer; and the oxidation mitigation layer is made of TiN.

[0104] The method for preparing the target system comprises the following steps:

[0105] 1) The upper surface of the substrate is first subjected to laser treatment in an argon atmosphere to increase the surface roughness of the substrate, and then ultrasonic cleaning is performed to remove residual contaminants such as powder on the surface of the substrate.

[0106] 2) A honeycomb structure and flow guide holes are constructed on the upper surface of the substrate through a laser processing process.

[0107] 3) A hydrogen diffusion layer is prepared layer by layer in the through-holes of the honeycomb structure by laser sintering, specifically: first, a layer of tantalum powder is laid in the through-hole, then laser sintered, then another layer of tantalum powder is laid, then laser sintered again, for a total of 5 sinterings. The laser power C during laser sintering of the current layer is t =200W+20W*(2-C C ), where C C is the number of sintered layers, that is, the laser power of the first laser sintering is 220 W, and the laser power of the second laser sintering is 240 W. Subsequently, several layers of pure tantalum are injected into the through holes of the honeycomb structure by evaporation.

[0108] 4) a lithium layer is evaporated on the surface of the hydrogen diffusion layer; finally, in order to alleviate the oxidation of lithium, a TiN coating is prepared by a vacuum diffusion welding method as an oxidation mitigation layer.

[0109] Example 4

[0110] A target system includes a circular substrate (20 cm in diameter and 0.8 cm in thickness), such as Figure 1 As shown, the upper surface of the substrate presents a honeycomb structure, which is composed of a number of columnar through holes perpendicular to the thickness direction of the substrate. Figure 2 As shown, between these adjacent columnar through holes, there are several guide holes distributed at their intersections, and each through hole contains a hydrogen diffusion layer, a target material layer and an oxidation mitigation layer from bottom to top. Specifically:

[0111] Regarding size and shape: Figure 1As shown, the cross section of the through hole is a hexagonal structure with a side length of about 1000 microns. The flow guide hole is a circular structure with a pore diameter of about 100 nanometers.

[0112] Regarding materials: The substrate is made of copper; the hydrogen diffusion layer is based on tantalum, with copper evenly dispersed within the matrix, and the copper content in the hydrogen diffusion layer decreases from bottom to top. The target layer is a lithium layer; and the oxidation mitigation layer is made of TiN.

[0113] The method for preparing the target system comprises the following steps:

[0114] 1) The upper surface of the substrate is first subjected to laser treatment in an argon atmosphere to increase the surface roughness of the substrate, and then ultrasonic cleaning is performed to remove residual contaminants such as powder on the surface of the substrate.

[0115] 2) A honeycomb structure and flow guide holes are constructed on the upper surface of the substrate through a laser processing process.

[0116] 3) A hydrogen diffusion layer is prepared layer by layer in the through-holes of the honeycomb structure by laser sintering, specifically: first, a layer of tantalum powder is laid in the through-hole, then laser sintered, then another layer of tantalum powder is laid, then laser sintered again, for a total of 5 sinterings. The laser power C during laser sintering of the current layer is t =200W+20W*(10-C C ), where C C Subsequently, several layers of pure tantalum are injected into the through holes of the honeycomb structure by evaporation.

[0117] 4) a lithium layer is evaporated on the surface of the hydrogen diffusion layer; finally, in order to alleviate the oxidation of lithium, a TiN coating is prepared by a vacuum diffusion welding method as an oxidation mitigation layer.

[0118] Example 5

[0119] A target system includes a circular substrate (20 cm in diameter and 0.8 cm in thickness), the upper surface of which exhibits a honeycomb structure consisting of a plurality of columnar through-holes perpendicular to the thickness direction of the substrate. Between these adjacent columnar through-holes, a plurality of guide holes are distributed at their intersections. Each through-hole contains, from bottom to top, a hydrogen diffusion layer, a target material layer, and an oxidation mitigation layer. Specifically:

[0120] Regarding size and shape: the cross-section of the through-hole is a pentagonal structure with a side length of approximately 1000 microns. The flow guide hole is a circular structure with a pore diameter of approximately 100 nanometers.

[0121] Regarding materials: The substrate is made of copper; the hydrogen diffusion layer is based on vanadium, with copper evenly dispersed within the matrix, and the copper content in the hydrogen diffusion layer decreases from bottom to top. The target layer is a lithium layer; and the oxidation mitigation layer is made of titanium.

[0122] Example 6

[0123] A target system includes a circular substrate (20 cm in diameter and 0.8 cm in thickness), the upper surface of which exhibits a honeycomb structure consisting of a plurality of columnar through-holes perpendicular to the thickness direction of the substrate. Between these adjacent columnar through-holes, a plurality of guide holes are distributed at their intersections. Each through-hole contains, from bottom to top, a hydrogen diffusion layer, a target material layer, and an oxidation mitigation layer. Specifically:

[0124] Regarding size and shape: the cross-section of the through-hole is an octagonal structure with a side length of approximately 800 microns. The flow-guiding hole is a quasi-circular structure with a pore diameter of approximately 100 nanometers.

[0125] Regarding materials: The substrate is made of copper; the hydrogen diffusion layer is based on palladium, with copper evenly dispersed within the matrix, and the copper content in the hydrogen diffusion layer decreases from bottom to top. The target layer is made of beryllium; and the oxidation mitigation layer is made of titanium.

[0126] Example 7

[0127] A target system includes a circular substrate (20 cm in diameter and 0.8 cm in thickness), the upper surface of which exhibits a honeycomb structure consisting of a plurality of columnar through-holes perpendicular to the thickness direction of the substrate. Between these adjacent columnar through-holes, a plurality of guide holes are distributed at their intersections. Each through-hole contains, from bottom to top, a hydrogen diffusion layer, a target material layer, and an oxidation mitigation layer. Specifically:

[0128] Regarding size and shape: the cross-section of the through-hole is an octagonal structure with a side length of approximately 800 microns. The flow-guiding hole is a quasi-circular structure with a pore diameter of approximately 100 nanometers.

[0129] Regarding materials: The substrate is made of copper; the hydrogen diffusion layer is based on niobium, with copper evenly dispersed within the matrix. The copper content in the hydrogen diffusion layer decreases from bottom to top. The target layer is a lithium layer; and the oxidation mitigation layer is made of titanium.

[0130] Example 8

[0131] A target system includes a circular substrate (20 cm in diameter and 0.8 cm in thickness), the upper surface of which exhibits a honeycomb structure consisting of a plurality of columnar through-holes perpendicular to the thickness direction of the substrate. Between these adjacent columnar through-holes, a plurality of guide holes are distributed at their intersections. Each through-hole contains, from bottom to top, a hydrogen diffusion layer, a target material layer, and an oxidation mitigation layer. Specifically:

[0132] Regarding size and shape: the cross-section of the through-hole is an octagonal structure with a side length of approximately 800 microns. The flow-guiding hole is a quasi-circular structure with a pore diameter of approximately 100 nanometers.

[0133] Regarding materials: The substrate is made of copper; the hydrogen diffusion layer is based on tungsten, with copper evenly dispersed within the matrix. The copper content in the hydrogen diffusion layer decreases from bottom to top. The target layer is a lithium layer; and the oxidation mitigation layer is made of titanium.

[0134] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in the field should understand that the specific implementation methods of the present invention can still be modified or replaced by equivalents. Any modification or equivalent replacement that does not depart from the spirit and scope of the present invention should be covered by the scope of protection of the claims of the present invention.

Claims

1. A target system, characterized in that: It includes a base plate with a honeycomb structure on its upper surface, wherein a plurality of guide holes are provided at the junction of adjacent through holes in the honeycomb structure; A hydrogen diffusion layer and a target material layer are sequentially arranged in each through hole from bottom to top; The hydrogen diffusion layer is based on a high hydrogen storage and high hydrogen diffusion rate material with a hydrogen diffusion coefficient at least 10,000 times that of the substrate material, and the same elements as the substrate material are dispersed in the matrix; From bottom to top, the content of the same element as the substrate material in the hydrogen diffusion layer gradually decreases; The hydrogen diffusion layer is formed by filling the through hole with high hydrogen storage and high hydrogen diffusion rate materials in multiple times and then laser sintering, and then injecting several layers of high hydrogen storage and high hydrogen diffusion rate materials into the through hole by evaporation or sputtering coating or vacuum hot pressing; the laser power C of each layer of laser sintering is t =200W+20W*(nC C ), n is the total number of sintered layers, C C is the number of layers currently sintered.

2. The target system according to claim 1, wherein: The cross section of the through hole is an n-gonal structure, wherein n≥3.

3. The target system according to claim 2, characterized in that: The side length of the n-gonal structure is in the micrometer order.

4. The target system according to claim 1, wherein: The guide hole is a circular hole, a quasi-circular hole or a polygonal hole.

5. The target system according to claim 1 or 4, characterized in that: The pore size of the flow guide hole is in the micrometer or nanometer level.

6. The target system according to claim 1, wherein: The high hydrogen storage and high hydrogen diffusion rate material is one or more alloys of tantalum, vanadium, palladium, niobium, platinum, tungsten and oxides thereof.

7. The target system according to claim 1, wherein: The substrate is made of copper.

8. The target system according to claim 1, wherein: The target material layer is a lithium layer or a beryllium layer.

9. The target system according to claim 1, wherein: An oxidation mitigation layer is provided on the top of the target material layer in the through hole.

10. The target system according to claim 9, wherein: The material of the oxidation mitigation layer is TiN, Ti, Nb and / or metal compounds thereof.

11. The target system according to claim 1, wherein: The total number of sintered layers is 2-10.

12. A method for preparing a target system according to claim 9 or 10, characterized in that include: 1) Constructing a honeycomb structure and diversion holes on the upper surface of the substrate; 2) A hydrogen diffusion layer is prepared layer by layer in the through-holes of the honeycomb structure: the high hydrogen storage and high hydrogen diffusion rate material is filled into the through-holes in multiple times, and laser sintered after each filling; several layers of high hydrogen storage and high hydrogen diffusion rate material are injected into the through-holes by evaporation, sputtering or vacuum hot pressing to obtain a hydrogen diffusion layer; from bottom to top, the content of the same element as the substrate material in the hydrogen diffusion layer gradually decreases, and the content of the high hydrogen storage and high hydrogen diffusion rate material gradually increases; the laser power C of the laser sintering of the current layer t =200W+20W*(nC C ), n is the total number of sintered layers, C C is the number of layers currently sintered; 3) Prepare the target layer and the oxidation mitigation layer in sequence.

13. The preparation method according to claim 12, characterized in that: The total number of sintered layers is 2-10.

Citation Information

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