A process chamber, semiconductor processing apparatus, and method of calibrating a carrier platform

Abstract

A process chamber, a semiconductor processing equipment and a method for calibrating a carrier platform are disclosed. The process chamber includes a chamber body and at least one process site disposed in the chamber body. Each process site includes a carrier platform movably connected to the chamber body and a shower assembly disposed directly above the carrier platform. The process chamber further includes at least one first distance measuring module disposed on the shower assembly and configured to measure a first distance between the first distance measuring module and a wafer on the carrier platform. A first driving source is connected to the carrier platform and configured to drive the carrier platform to perform a lifting movement according to the first distance. The Gap value can be calibrated in real time to ensure the film thickness consistency between wafers in different batches or different process sites.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing equipment technology, specifically to a calibration method for a process chamber, semiconductor processing equipment, and carrier platform. Background Technology

[0002] Plasma-enhanced chemical vapor deposition (PECVD) equipment can be used for dielectric thin film deposition processes. For example, it can grow dielectric thin films with Si, O, and N as the main components on the wafer surface, and it can also deposit doped thin films containing B and P. Film thickness consistency is a crucial indicator for this semiconductor processing equipment. For instance, it is necessary to ensure the consistency of film thickness across wafers fabricated at different times. Furthermore, this is even more critical for chambers with twin deposition sites, where the film thickness consistency across wafers at different process sites must be guaranteed within a single process. A process site refers to a location where deposition or etching processes can be performed. Each process site can process one wafer, while multiple process sites can process multiple wafers simultaneously to improve production efficiency.

[0003] The gap (gap value) between the wafer and the showerhead (top electrode) is a crucial factor in ensuring film thickness consistency across different wafers. One existing gap calibration method uses an AGS (Automatic Gauge System) for measurement. The AGS has three distributed modules on its plane. The AGS is placed inside a chamber, and the three modules measure the gap value at their respective locations. If the difference between the three gap values ​​and the set value is ≤0.1mm, the calibration is considered successful; otherwise, further calibration adjustments are required.

[0004] The above-mentioned Gap calibration method can only guarantee that the Gap value is accurate when the machine is assembled. However, as the equipment is used, the surface of the carrier tray or showerhead may have deposits or material shedding, which cannot guarantee that the actual Gap value will always meet the process standard. Changes in Gap value will affect the consistency of film thickness between wafers in different batches or different process positions. Summary of the Invention

[0005] To address the aforementioned technical problems, this application provides a process chamber, semiconductor processing equipment, and a calibration method for a carrier platform. This method can improve the problem that existing process chambers cannot guarantee that the spacing between the wafer and the spray plate always meets the design target value during the process, resulting in poor film thickness consistency between wafers in different batches or at different process positions.

[0006] To address the aforementioned technical problems, in a first aspect, embodiments of this application provide a process chamber, including a chamber body and at least one process position disposed within the chamber body. Each process position includes a support platform movably connected to the chamber body and a spray assembly disposed directly above the support platform. The process chamber further includes:

[0007] At least one first ranging module is disposed on the spray assembly for measuring a first distance between itself and the wafer on the support platform;

[0008] A first drive source, connected to the support platform, is used to drive the support platform to perform lifting and lowering movements according to the first distance.

[0009] Optionally, the spray assembly includes:

[0010] The air distribution plate has multiple air distribution holes inside. The air distribution plate includes transparent parts that correspond one-to-one with the first ranging module. The transparent parts are arranged to avoid the air distribution holes. The first ranging module is arranged to correspond with the transparent parts.

[0011] A sealing cover is provided on the gas equalization plate and forms a gas equalization cavity between the sealing cover and the gas equalization plate. The sealing cover is provided with an air inlet hole for introducing gas into the gas equalization cavity.

[0012] Optionally, the spray assembly further includes: an isolation pipe disposed within the air distribution chamber, the isolation pipe including an inlet end and an outlet end corresponding to each of the at least one first ranging module, the outlet end covering the corresponding first ranging module within the isolation pipe, the sealing cover also having a connection hole, the inlet end being disposed at the connection hole, and the isolation pipe being used to accommodate the cable wiring of the first ranging module.

[0013] Optionally, the air equalization disk includes at least two air equalization areas, wherein the at least two air equalization areas include a first air equalization area without the first ranging module and a second air equalization area with the first ranging module.

[0014] Wherein, the size of the air outlet end of the air distribution hole in the first air distribution area is smaller than the size of the air outlet end of the air distribution hole in the second air distribution area.

[0015] Optionally, the air distribution holes in the first air distribution area are straight holes;

[0016] The outlet end of the air distribution hole in the second air distribution area is a cone shape that opens outward.

[0017] Optionally, the first gas equalization area includes an inner ring gas equalization area and an outer ring gas equalization area, and the second gas equalization area is a middle ring gas equalization area.

[0018] The middle ring gas distribution area is arranged around the inner ring gas distribution area, and the outer ring gas distribution area is arranged around the middle ring gas distribution area.

[0019] Optionally, the bearing platform includes a bearing plate and a support base, the support base passing through the bottom plate of the chamber body and being movably connected to the bottom plate, and the bearing plate being disposed on the top surface of the support base;

[0020] The support platform also includes a mounting plate connected to the portion of the support base located on the outer side of the chamber body;

[0021] The first drive source is used to drive the mounting plate to move the carrier plate up and down.

[0022] Optionally, the process chamber further includes a fixing plate disposed on the outside of the chamber body, and the fixing plate is provided with a sliding groove extending in the vertical direction;

[0023] The support platform also includes a slider that cooperates with the slide groove, and the slider is connected to the mounting plate;

[0024] The first drive source is connected to the slider to drive the slider to move up and down along the groove.

[0025] Optionally, the support platform further includes a connecting bracket;

[0026] The first leveling mechanism is connected to one end of the mounting plate and one end of the connecting bracket, respectively, and is used to adjust the level of the support base in the first direction through the mounting plate;

[0027] The second leveling mechanism is connected to the other end of the slider and the connecting bracket, respectively, and is used to adjust the level of the support in a second direction through the connecting bracket, wherein the second direction is perpendicular to the first direction.

[0028] Optionally, the first leveling mechanism includes:

[0029] At least two second ranging modules are arranged along the first direction on the top surface of the mounting plate, and the second ranging modules are used to measure a second distance between themselves and the base plate;

[0030] A second drive source, disposed on the connecting bracket and connected to the mounting plate, is used to drive the mounting plate to swing along the first direction according to the second distance; and / or,

[0031] The second leveling mechanism includes:

[0032] At least two third ranging modules are arranged along the second direction on the top surface of the mounting plate, the third ranging modules being used to measure a third distance between themselves and the base plate;

[0033] A third drive source, disposed on the slider and connected to the other end of the connecting bracket, is used to drive the mounting plate to swing along the second direction via the connecting bracket according to the third distance.

[0034] Secondly, embodiments of this application provide a semiconductor processing apparatus, including the process chambers described in the above embodiments.

[0035] Thirdly, embodiments of this application provide a method for calibrating a load-bearing platform based on the process chamber described in the above embodiments. This method includes a gap calibration process, which includes:

[0036] The first ranging module is controlled to measure the first distance between itself and the wafer on the support platform;

[0037] The gap value between the spray assembly and the wafer is calculated based on the first distance, and the first absolute value of the difference between the gap value and the preset gap target value is calculated.

[0038] If the first absolute value is greater than the preset lower limit of gap error and less than or equal to the preset upper limit of gap error, then the first driving source is controlled to drive the carrier platform to rise or fall, and returns to the control of the first ranging module to measure the first distance between itself and the wafer on the carrier platform, until the first absolute value is less than or equal to the preset lower limit of gap error.

[0039] Optionally, after calculating the gap value between the spray assembly and the wafer based on the first distance, and calculating the first absolute value of the difference between the gap value and a preset gap target value, the method further includes:

[0040] If the first absolute value is greater than the preset upper limit of gap error, then the process chamber is determined to be abnormal.

[0041] Optionally, the gap calibration process further includes a horizontal calibration process before the horizontal calibration process, the horizontal calibration process including:

[0042] The second ranging module is controlled to measure the second distance between itself and the base plate;

[0043] Calculate the second absolute value of the difference between the second distances measured by the second ranging module;

[0044] If the second absolute value is greater than the preset horizontal error value, the second drive source is controlled to drive the mounting plate to swing along the first direction and return to the control of the second ranging module to measure the second distance between itself and the base plate, until the second absolute value is less than or equal to the preset horizontal error value.

[0045] Optionally, before the second ranging module measures the second distance between itself and the base plate, or if the second absolute value is greater than a preset horizontal error value, the second driving source is controlled to drive the mounting plate to swing along the first direction and return to the second ranging module measuring the second distance between itself and the base plate, until the second absolute value is less than or equal to the preset horizontal error value, the method further includes:

[0046] The third ranging module is controlled to measure the third distance between itself and the base plate;

[0047] Calculate the third absolute value of the difference between the third distances measured by the third ranging module;

[0048] If the third absolute value is greater than the preset horizontal error value, the third drive source is controlled to drive the mounting plate to swing along the second direction and return to control the third ranging module to measure the third distance between itself and the base plate until the third absolute value is less than or equal to the preset horizontal error value.

[0049] As described above, the process chamber of this application, by setting at least one first distance measuring module on the spray assembly, can measure a first distance between itself and the wafer on the support platform. Based on this first distance, a Gap value can be obtained. When the Gap value exceeds the error range of a preset gap target value, a first driving source can drive the support platform to rise or fall to calibrate the Gap value. Throughout the process, the first distance measured in real time by the first distance measuring module can promptly calibrate the Gap value, ensuring the consistency of film thickness between wafers in different batches or at different process positions. It can not only perform Gap calibration during the process but is also suitable for pre-process equipment debugging, eliminating the need for repeated chamber opening measurements and simplifying debugging. Furthermore, in this embodiment, the measurement during the Gap calibration process is based on a fixed spray assembly, resulting in high accuracy, reaching levels above 0.1 mm. Attached Figure Description

[0050] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application. To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, those skilled in the art can obtain other drawings based on these drawings without any creative effort.

[0051] Figure 1 This is a schematic diagram showing the relationship between the spacing and the movement distance of the bearing plate;

[0052] Figure 2 This is a schematic diagram of the structure of a process chamber provided in an embodiment of this application;

[0053] Figure 3 This is a schematic diagram of the structure of a spray assembly provided in an embodiment of this application;

[0054] Figure 4 This is a schematic diagram of the structure of a gas equalization disc provided in an embodiment of this application;

[0055] Figure 5 This is a schematic diagram of a longitudinal section of a first through hole provided in an embodiment of this application;

[0056] Figure 6 This is a longitudinal cross-sectional schematic diagram of a second through hole provided in an embodiment of this application;

[0057] Figure 7 It is along Figure 2 Schematic diagram of the cross-sectional structure along line AA;

[0058] Figure 8 This is a schematic diagram of the structure of a control system provided in an embodiment of this application;

[0059] Figure 9 This is a schematic flowchart of a gap calibration method provided in an embodiment of this application;

[0060] Figure 10 This is a flowchart illustrating another gap calibration method provided in an embodiment of this application.

[0061] Figure 11 This is a schematic flowchart of a horizontal calibration method in a first direction provided in an embodiment of this application;

[0062] Figure 12 This is a schematic flowchart of a horizontal calibration method in a second direction provided in an embodiment of this application;

[0063] Figure 13 This is a schematic flowchart of a horizontal calibration method provided in an embodiment of this application.

[0064] The realization of the objectives, functional features, and advantages of this application will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. The accompanying drawings have illustrated specific embodiments of this application, which will be described in more detail below. These drawings and textual descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concepts of this application to those skilled in the art through reference to specific embodiments. Detailed Implementation

[0065] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0066] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. Furthermore, components, features, and elements with the same names in different embodiments of this application may have the same meaning or different meanings, the specific meaning of which must be determined by its interpretation in that specific embodiment or further in conjunction with the context of that specific embodiment.

[0067] It should be further understood that the terms "comprising" or "including" indicate the presence of the stated features, steps, operations, elements, components, items, types, and / or groups, but do not exclude the presence, occurrence, or addition of one or more other features, steps, operations, elements, components, items, types, and / or groups. The terms "or," "and / or," and "comprising at least one of the following," as used in this application, can be interpreted as inclusive, or mean any one or any combination thereof. For example, "comprising at least one of the following: A, B, C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C," and similarly, "A, B, or C" or "A, B, and / or C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C." Exceptions to this definition only occur when the combination of elements, functions, steps, or operations is inherently mutually exclusive in some way.

[0068] It should be understood that although the terms first, second, third, etc., may be used in this document to describe various types of information, this information should not be limited to these terms. These terms are only used to distinguish information of the same type from one another. For example, without departing from the scope of this document, first information may also be referred to as second information, and similarly, second information may also be referred to as first information. Depending on the context, the singular forms “a,” “an,” and “the” used in this document are intended to also include the plural forms, unless the context indicates otherwise.

[0069] It should be understood that the terms "top", "bottom", "upper", "lower", "vertical", "horizontal", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application.

[0070] For ease of description, the following embodiments are all illustrated using an orthogonal space formed by a horizontal plane and a vertical direction as an example. This premise should not be construed as a limitation of this application.

[0071] When semiconductor process equipment performs deposition or etching processes, the gap (gap value) between the wafer and the spray plate is one of the important factors in ensuring the consistency of film thickness between different wafers. Please refer to [link / reference]. Figure 1 , Figure 1 This is a schematic diagram showing the relationship between the spacing and the movement distance of the carrier plate. The initial position of the carrier plate 20a relative to the chamber body 10a and the distance between it and the spray plate 30a is L. During the process, the wafer (not shown in the figure) is placed on the carrier plate 20a and rises a distance D with the carrier plate 20a. The gap between the top surface of the carrier plate 20a and the bottom surface of the spray plate 30a is Gap. Considering the wafer thickness (T), Gap = LDT. The Gap value is manually calibrated before the process, but with the use of the equipment, the surface of the carrier plate or spray plate may have deposits or material shedding, making it impossible to guarantee that the actual Gap value always meets the process standard. Changes in the Gap value will affect the consistency of film thickness between wafers in different batches or at different process positions. Based on this, this application provides a calibration method for a process chamber, semiconductor processing equipment, and carrier platform. The following embodiments are all illustrated using deposition process equipment as an example, and therefore should not be construed as limiting this application.

[0072] Please see Figure 2 , Figure 2This is a schematic diagram of a process chamber provided in an embodiment of this application. The process chamber includes a chamber body 10 and at least one process position disposed within the chamber body 10. The process position may be, for example, a deposition process position. That is, in this embodiment, only one deposition process position may be disposed in the process chamber, or two, three or more deposition process positions may be disposed. Figure 2 Taking a process chamber with two deposition process positions as an example, since the two deposition process positions can be completely identical, only one deposition process position is labeled. Each deposition process position may include a support platform 20, a spray assembly 30, at least one first ranging module 41, and a first drive source 51.

[0073] The carrier platform 20 is movably connected to the chamber body 10. For example, the carrier platform 20 can move up and down relative to the chamber body 10 to adjust its height; or it can swing relative to the chamber body 10 to adjust its level. The carrier platform 20 is used to carry wafers and can also be equipped with a heater to heat it. Ejector pins 25 can also be installed inside the carrier platform 20. Three ejector pins 25 can be installed, and wafers can be picked up or placed by controlling the raising and lowering of the ejector pins 25.

[0074] The spray assembly 30 is positioned directly above the support platform 20. During the process, an external air source supplies air to the spray assembly 30, which then sprays the gas downwards evenly. Under the influence of the radio frequency power and high temperature applied to the spray assembly 30, the gas undergoes chemical and plasma reactions, and the resulting products are deposited on the surface of the wafer to form a thin film.

[0075] At least one first ranging module 41 can be provided and disposed on the spray assembly 30. The first ranging module 41 is used to measure the first distance between itself and the wafer on the support platform 20. The first ranging module 41 can be a laser ranging sensor. For example, if the first ranging module 41 is embedded in the spray assembly 30 and flush with the bottom surface of the spray assembly 30, the gap value is equal to the first distance. If the first ranging module 41 is disposed on the top surface of the spray assembly 30, the gap value is equal to the first distance minus the thickness of the spray assembly 30. The placement of the first ranging module 41 on the spray assembly 30 is not limited. It should be noted that one, two, or more than three first ranging modules 41 can be provided. When more than three are provided, it is best to have at least three that are not collinear. By providing multiple first ranging modules 41 and distributing them at different positions on the spray assembly 30, the average value can be calculated to more accurately reflect the gap value.

[0076] The first drive source 51, connected to the support platform 20, is used to drive the support platform 20 to move up and down according to the first distance. For example, the average value of the first distance measured by each first ranging module 41 can be calculated, and the gap value can be determined by this average value. When the gap value is greater than a preset gap target value, the first drive source 51 can be controlled to drive the support platform 20 to rise; when the gap value is less than the preset gap target value, the first drive source 51 can be controlled to drive the support platform 20 to fall, so that the gap value is within the error range of the preset gap target value. In a specific application, a control system can be used to control the first ranging module 41 and the first drive source 51. For example, it can be a PLC control system, which is a common technology in this field and will not be described in detail in this embodiment.

[0077] Existing equipment uses offline calibration under atmospheric conditions, requiring manual measurement and recording of different gap values, which is time-consuming and labor-intensive. Furthermore, the gap value changes with usage, and failure to calibrate promptly significantly impacts process uniformity. This embodiment addresses this by incorporating at least one first distance measuring module 41 on the spray assembly 30. This module measures the first distance between itself and the wafer on the support platform 20, deriving the gap value based on this distance. When the gap value exceeds a preset target gap value, the first drive source 51 can drive the support platform 20 to rise or fall to calibrate the gap value. Throughout the process, the real-time measurement of the first distance by the first distance measuring module 41 allows for timely gap value calibration, ensuring film thickness consistency between wafers from different batches or at different deposition process sites. This method not only enables gap calibration during the process but is also suitable for pre-process equipment debugging, eliminating the need for repeated cavity measurements and simplifying the debugging process. Furthermore, in this embodiment, the measurement of the Gap calibration process is based on the fixed spray assembly 30, which has high accuracy and can reach the level of 0.1mm or higher.

[0078] It should be noted that although the first ranging module 41 can be positioned below the carrier platform 20, and through holes can be made on the carrier platform 20 to measure the distance to the spray assembly 30 above the process chamber or the wafer on the carrier platform 20, the carrier platform 20 usually needs to be heated during the deposition process. The presence of through holes on the carrier platform 20 would affect the temperature uniformity of the carrier platform 20, thus impacting the deposition process.

[0079] In one embodiment, this application provides an installation scheme for a first ranging module 41 on a sprinkler assembly 30. Please refer to... Figure 3 and Figure 4 , Figure 3 This is a schematic diagram of the structure of a spray assembly provided in an embodiment of this application. Figure 4This is a schematic diagram of the structure of a uniform air distribution plate provided in an embodiment of this application. The spray assembly 30 includes a uniform air distribution plate 31 and a sealing cover 32.

[0080] The air distribution disk 31 has multiple air distribution holes 311 inside. The air distribution disk 31 includes transparent portions 312 corresponding to the first ranging module 41. The transparent portions 312 are positioned to avoid the air distribution holes 311. The first ranging module 41 is positioned corresponding to the transparent portion. For example, the first ranging module 41 can be positioned on the top surface of the air distribution disk 31 and located at the corresponding transparent portion 312, or it can be embedded in the transparent portion 312 from the top surface of the air distribution disk 31. As an example, the air distribution disk 31 can be made of metal. Air distribution holes 311 and through holes corresponding to the transparent portions 312 are machined on the air distribution disk 31. Then, quartz material is used to seal the through holes to form a quartz window, i.e., the transparent portion 312. The first ranging module 41 is positioned on the transparent portion 312. When the first ranging module 41 is a laser sensor, the emitted laser signal can penetrate the transparent portion 312, and the reflected laser signal can also penetrate the transparent portion 312 and be received by the first ranging module 41, thereby achieving distance measurement.

[0081] The sealing cover 32 is placed on the gas equalization plate 31 and forms a gas equalization cavity between the sealing cover 32 and the gas equalization plate 31. The sealing cover 32 is provided with an air inlet 321 for introducing gas into the gas equalization cavity.

[0082] In this embodiment, the first ranging module 41 can measure the first distance through the transparent part 312 by means of light sensing.

[0083] In one embodiment, please refer to... Figure 2 and Figure 3 The spray assembly 30 may further include an isolation pipe 33, which is disposed within the air distribution chamber. The isolation pipe 33 includes an inlet end 331 and an outlet end 332 corresponding to each of the first ranging modules 41. The outlet end 332 covers the corresponding first ranging module 41 within the isolation pipe 33. The sealing cover 32 is also provided with a connection hole 322, and the inlet end 331 is located at the connection hole 322. For example, when three first ranging modules 41 are provided, the isolation pipe 33 includes three branch pipes, and the outlet end 332 of each branch pipe covers one first ranging module 41. In application, a connecting shaft 34 can be used to penetrate the top plate 11 of the chamber body 10 and connect to the top surface of the sealing cover 32. A through hole 341 communicating with the air inlet 321 can be provided in the connecting shaft for air supply, and a through hole 342 communicating with the connection hole 322 can also be provided in the connecting shaft 34 for cable wiring of the first ranging module 41. Those skilled in the art should understand that the isolation conduit 33 is optional, and the first ranging module 41 can also transmit ranging data to the outside via the wireless communication module, thus eliminating the need for an additional isolation conduit 33 to accommodate wiring.

[0084] In this embodiment, the first ranging module 41 and the corresponding cable can be isolated separately by the isolation pipe 33, completely isolated from the entire gas channel. The first ranging module 41 is in a non-radio frequency (non-plasma) environment to avoid corrosion and affect its lifespan.

[0085] Since the first ranging module 41 occupies a portion of the area on the gas distribution disk 31, affecting the gas flow rate in certain areas, this application provides an embodiment of the gas distribution disk. Please refer to [link to embodiment]. Figures 4-6 , Figure 5 This is a longitudinal cross-sectional schematic diagram of a first through hole provided in an embodiment of this application. Figure 6 This is a longitudinal cross-sectional schematic diagram of a second through hole provided in an embodiment of this application. The air distribution plate 31 includes at least two air distribution regions, including a first air distribution region without the first ranging module 41 and a second air distribution region with the first ranging module. The size of the air outlet end of the air distribution hole (hereinafter referred to as the first through hole 311A) in the first air distribution region is smaller than the size of the air outlet end of the air distribution hole (hereinafter referred to as the second through hole 311B) in the second air distribution region. Figure 4 Three uniform gas regions are shown in the figure. Those skilled in the art should understand that more or fewer uniform gas regions are also possible.

[0086] The presence of the first ranging module 41 reduces the number of second through holes 311B in the second gas equalization zone, resulting in a corresponding decrease in gas flow rate. In this embodiment, by setting the outlet size of the second through hole 311B to be larger than the outlet size of the first through hole 311A ​​(the diameters of the second through hole 311B and the first through hole 311A ​​are approximately equal), the gas flow rate in the second gas equalization zone can be increased to compensate for this, thereby improving the uniformity of gas flow in the gas equalization disk 31. As an example, the first through hole 311A ​​in the first gas equalization zone is a straight hole, while the outlet end of the second through hole 311B in the second gas equalization zone is an outwardly flared cone.

[0087] In one embodiment, the first gas uniformity region includes an inner ring gas uniformity region and an outer ring gas uniformity region, and the second gas uniformity region is a middle ring gas uniformity region. The middle ring gas uniformity region is arranged around the inner ring gas uniformity region, and the outer ring gas uniformity region is arranged around the middle ring gas uniformity region.

[0088] For example, with Figure 4 The area is bounded by a dashed circle. Multiple air-distributing holes 311 include a first through-hole 311A ​​evenly distributed in the inner ring air-distributing region, a second through-hole 311B evenly distributed in the middle ring air-distributing region, and a third through-hole 311C evenly distributed in the outer ring air-distributing region. The first through-hole 311A ​​and the third through-hole 311C are straight holes, such as... Figure 5 As shown; the second through hole 311B is located at one end of the bottom surface of the gas distribution plate 31 and is an outwardly flared cone shape, as shown. Figure 6 As shown; the first ranging module 41 is set in the central air uniformity area.

[0089] The inclusion of the first ranging module 41 reduces the number of second through holes 311B, resulting in a corresponding decrease in gas flow rate in the central uniform gas distribution area. In this embodiment, the outlet end of the second through hole 311B in the central uniform gas distribution area is designed as an outward-opening cone, which increases the gas flow rate in the central uniform gas distribution area to compensate for this, thereby improving the uniformity of gas flow rate in the uniform gas distribution disk 31.

[0090] In one embodiment, this application provides an example of a first driving source driving the lifting and lowering of a carrier platform 20. Please continue reading. Figure 2 The support platform 20 may include a support plate 21, a support base 22, and a mounting plate 24. The support base 22 penetrates the bottom plate 12 of the chamber body 10 and is movably connected to the bottom plate 12. For example, the support base 22 can be connected to the bottom plate 12 via a corrugated pipe. The support plate 21 is disposed on the top surface of the support base 22. The mounting plate 24 is connected to the outer portion of the support base 22 located on the chamber body 10. The first drive source 51 is used to drive the mounting plate to move the support plate 21 in a lifting motion.

[0091] As an example, the process chamber may also include a fixing plate 60 disposed on the outside of the chamber body 10. For example, the fixing plate 60 may be disposed on the bottom surface of the bottom plate 12 of the chamber body 10. The fixing plate 60 is provided with a vertically extending groove (not shown in the figure); the support platform 20 also includes a slider 23 that cooperates with the groove. The slider 23 is connected to the mounting plate 24, including the slider 23 being directly connected to the mounting plate 24, or the slider 23 being indirectly connected to the mounting plate 24 through some connecting parts. This embodiment does not make any special limitations. The first driving source 51 is used to drive the support platform 20 to move up and down relative to the groove. For example, the driving force of the first driving source 51 may act on the slider 23 or on the mounting plate 24. This embodiment does not make any special limitations.

[0092] In one embodiment, this application also provides a scheme for horizontal adjustment of the support platform 20. Please refer to [link / reference]. Figure 2 and Figure 7 The supporting platform 20 may further include a connecting bracket 70. A first leveling mechanism 110 is connected to one end of the mounting plate 24 and the connecting bracket 70, respectively, for adjusting the level of the support base 22 in the first direction (X direction) via the mounting plate 24. A second leveling mechanism 120 is connected to the other end of the slider 23 and the connecting bracket 70, respectively, for adjusting the level of the support base 22 in the second direction (Y direction) via the connecting bracket 70, wherein the second direction is perpendicular to the first direction. A first driving source 51 may be connected to the slider 23, that is, the force of the first driving source 51 is applied to the slider 23 to drive the slider 23 to rise and fall relative to the groove on the fixed plate 60.

[0093] In this embodiment, the first leveling mechanism 110 and the second leveling mechanism 120 are connected by a connecting bracket 70. The first leveling mechanism 110 is connected to the mounting plate 24 and can directly level the support platform 20 in the X direction. The second leveling mechanism 120 indirectly drives the support platform 20 through the connecting bracket 70 to level the support platform 20 in the Y direction. In addition, the mounting plate 24, the first leveling mechanism 110, the connecting bracket 70, and the second leveling mechanism 120 are all directly or indirectly connected to the slider 23, and can be raised or lowered as a whole under the action of the first driving source 51. This embodiment cleverly integrates a horizontal calibration structure and a gap calibration structure, and the structure and control are relatively simple.

[0094] As an example, the first leveling mechanism 110 may include a second drive source 52 and at least two second ranging modules 42 arranged along a first direction, i.e., the X direction, on the top surface of the mounting plate 24. Each second ranging module 42 is used to measure a second distance between itself and the base plate 12. The following description uses two second ranging modules 42 arranged symmetrically with respect to the Y-axis as an example.

[0095] The second drive source 52 is mounted on the connecting bracket 70 and connected to the mounting plate 24. For example, the second drive source 52 can be connected to the mounting plate 24 via the X-axis 521. The second drive source 52 is used to drive the mounting plate 24 to swing along the first direction X according to the second distances X1 and X2 measured by the two second ranging modules 42, thereby allowing the support base 22 to rotate relative to the base plate 12 (the connection point between the two is the fulcrum of rotation) around the second direction Y (the Y-axis is the axis of rotation). For example, when Figure 7 If the second distance X1 measured by the upper second ranging module 42 is greater than the second distance X2 measured by the lower second ranging module 42, and the difference between the two distances exceeds the preset horizontal error value, it indicates that the position of the upper second ranging module 42 is too low. The second drive source 52 can be controlled to drive the mounting plate 24 to move in the -X direction so that the bearing platform 20 remains horizontal in the X direction.

[0096] As an example, the second leveling mechanism 120 may include a third drive source 53 and at least two third ranging modules 43 arranged along the second direction, i.e., the Y direction, on the top surface of the mounting plate 24. Each third ranging module 43 is used to measure the third distance between itself and the base plate 12. The following description uses two third ranging modules 43 arranged symmetrically with respect to the X-axis as an example.

[0097] The third drive source 53 is mounted on the slider 23 and connected to the other end of the connecting bracket 70. For example, the third drive source 53 can be connected to the connecting bracket 70 via the Y-axis 531. The third drive source 53 is used to drive the mounting plate 24 to swing along the second direction Y according to the third distances Y1 and Y2 measured by the two third distance measuring modules 43, thereby allowing the support base 22 to rotate relative to the base plate 12 (the connection point between the two is the fulcrum of rotation) around the first direction X (the X-axis is the axis of rotation). The leveling principle of the third drive source 53 in the Y direction is described above regarding the leveling principle of the second drive source 52 in the X direction, and will not be repeated in this embodiment.

[0098] As examples, in this embodiment, the first drive source 51, the second drive source 52, and the third drive source 53 can be servo motors. For instance, the first drive source 51 is a Z-axis servo motor, the second drive source 52 is an X-axis servo motor, and the third drive source 53 is a Y-axis servo motor. For example, the control process of the second drive source 52 driving the mounting plate 24 to swing along the first direction X can be: when the servo motor rotates forward, it increases the feed amount, driving the mounting plate 24 to move in the -X direction; when it rotates backward, it decreases the feed amount, driving the mounting plate 24 to move in the +X direction. Of course, the forward rotation of the servo motor can also correspond to decreasing the feed amount, and the reverse rotation to increasing the feed amount. The second and third ranging modules can be CCD ranging sensors.

[0099] In this embodiment, the second ranging module 42 and the third ranging module 43 are mounted on the top surface of the mounting plate 24, respectively measuring the second and third distances between themselves and the base plate 12. The second drive source 52 and the third drive source 53 are connected by a connecting bracket 70. The second drive source 52 is connected to the mounting plate 24 and can directly level the bearing platform 20 in the X direction according to the second distance. The third drive source 53 indirectly drives the bearing platform 20 through the connecting bracket 70 and levels the bearing platform 20 in the Y direction according to the third distance. In addition, the mounting plate 24, the second drive source 52, the connecting bracket 70, and the third drive source 53 are all directly or indirectly connected to the slider 23, and can rise or fall as a whole under the action of the first drive source 51. This embodiment cleverly designs the first leveling mechanism 110 and the second leveling mechanism 120, and integrates the gap calibration structure. The overall structure connection and control are relatively simple.

[0100] Please see Figure 8 , Figure 8 This is a schematic diagram of a control system provided in an embodiment of this application, which can be applied to the process chamber of the above embodiment. Taking the process chamber as having two deposition process positions ST1 and ST2 as an example, the control system can control the two deposition process positions ST1 and ST2 separately and sequentially without affecting each other. This embodiment will be described using the control of deposition process position ST1 as an example.

[0101] The control system 100 includes a gap control module 101 and a level control module 102. When the host computer 200 sends a work command to the level control module 102 of the control system 100, the level control module 102 controls the second ranging module 42 and the third ranging module 43 to measure the second distance and the third distance respectively, and calculates the levelness in the X and Y directions. When it is determined that leveling is required, such as X-direction leveling, the level control module 102 controls the second drive source 52 to work, so as to adjust the X-direction level of the support platform until the current levelness calculated in real time meets the standard. When the host computer 200 sends a work command to the gap control module 101 of the control system, the gap control module 101 controls the first ranging module 41 to measure the first distance and calculates the current gap value. When it is determined that the gap size needs to be adjusted, the gap control module 101 controls the first drive source 51 to work, so as to adjust the lifting of the support platform 20 until the current gap value calculated in real time meets the standard.

[0102] This application also provides a semiconductor processing apparatus, which includes the process chambers described in the above embodiments. For example, the semiconductor processing apparatus may be a plasma-enhanced chemical vapor deposition apparatus or a plasma etching apparatus. For the corresponding working principle and process of the semiconductor processing apparatus of this embodiment, please refer to the description of the process chamber in the foregoing embodiments of the present invention, which will not be repeated here.

[0103] Based on the process chambers described in the above embodiments, this application also provides a method for calibrating a carrier platform. Please refer to [link to relevant documentation]. Figure 9 , Figure 9 This is a schematic flowchart of a gap calibration method provided in an embodiment of this application. The gap calibration process may include:

[0104] S110, Control the first ranging module 41 to measure the first distance between itself and the wafer on the support platform 20.

[0105] S120. Calculate the gap value between the spray assembly and the wafer based on the first distance, and calculate the first absolute value of the difference between the gap value and the preset gap target value.

[0106] S130. If the first absolute value is greater than the preset lower limit of gap error and less than or equal to the preset upper limit of gap error, then control the first drive source 51 to drive the bearing platform 20 to rise or fall, and return to S110, until the first absolute value is less than or equal to the preset lower limit of gap error.

[0107] The gap value G between the spray assembly and the wafer is G = L - T', where L is the first distance measured by the first ranging module 41, and T' is the thickness of the air distribution disk 31, which is a constant. Therefore, measuring the first distance L is equivalent to indirectly obtaining G. For ease of description, the following text will directly describe the G value measured by the first ranging module 41, which should be understandable.

[0108] After measuring the G value, G can be compared with the preset gap target value G0. Specifically, the first absolute value ΔG = |G - G0| can be calculated. If the first absolute value is less than or equal to the preset gap error lower limit (G0), then... min If the first absolute value is greater than the preset lower limit of gap error and less than or equal to the preset upper limit of gap error (G), then it means that G is within the standard range. max If ΔG exceeds the standard range, it indicates that G is outside the standard range. The first drive source 51 can be controlled to drive the platform 20 to rise or fall until ΔG ≤ G. min .

[0109] Furthermore, S120 may also include:

[0110] S140. If the first absolute value is greater than the preset upper limit of the gap error, then perform abnormal event handling for the process chamber.

[0111] For the pre-process calibration procedure, since the initial distance L between the support platform 20 and the spray plate 30, and the wafer thickness T are constants, the accuracy of controlling the rising distance D of the support platform 20 is also relatively high. After the initial setting calibration, ΔG > G max This indicates that the Gap value deviates significantly from G0, suggesting a possible abnormality in the process chamber, such as foreign particles on the support platform. In this case, the process chamber can be opened for inspection or cleaned. Similarly, if the Gap value suddenly deviates significantly from G0 during the process, similar measures can be taken.

[0112] Please see Figure 10 , Figure 10 This is a schematic flowchart of another gap calibration method provided in this application embodiment, wherein the semiconductor processing equipment includes two deposition process positions ST1 and ST2, each deposition process position is provided with three first ranging modules 41, the preset gap target value is G0, and the preset gap error lower limit G min =0.1mm, preset upper limit of gap error G max = 0.5mm. The gap calibration method includes:

[0113] S111. The three first ranging modules 41 controlling the two deposition process positions ST1 and ST2 respectively measure the corresponding G values. The three G values ​​of deposition process position ST1 are G11, G12, and G13, and the three G values ​​of deposition process position ST2 are G21, G22, and G23. Calculate the average value G1 and the first absolute value ΔG1 = |G1 - G0| of G11, G12, and G13, and calculate the average value G2 and the first absolute value ΔG2 = |G2 - G0| of G21, G22, and G23, of deposition process position ST2.

[0114] S112. If |G1-G0|>0.1, then proceed to the gap calibration process of deposition process ST1; otherwise, execute S212.

[0115] S113. If G1-G0>0 and 0.1<G1-G0≤0.5, then control the Z-axis servo motor of the deposition process position ST1 to rotate forward.

[0116] If G1-G0 > 0 and G1-G0 > 0.5, then execute S115;

[0117] If G1-G0 < 0 and -0.5 ≤ G1-G0 < -0.1, then execute S116;

[0118] If G1-G0 < 0 and G1-G0 < -0.5, then execute S117;

[0119] S114. Exit the gap calibration process of deposition process ST1 and return to S112;

[0120] S115. Perform cavity inspection and end the entire calibration process.

[0121] S116, control the Z-axis servo motor of the deposition process position ST1 to reverse and return to S114;

[0122] S117. Perform the chamber cleaning procedure and return to S113;

[0123] S212. If |G2-G0|>0.1, then proceed to the gap calibration process of deposition process position ST2; otherwise, end the entire calibration process.

[0124] S213. If G2-G0>0 and 0.1<G2-G0≤0.5, then control the Z-axis servo motor of the deposition process position ST2 to rotate forward.

[0125] If G2-G0 > 0 and G2-G0 > 0.5, then execute S215;

[0126] If G2-G0 < 0 and -0.5 ≤ G2-G0 < -0.1, then execute S216;

[0127] If G2-G0 < 0 and G2-G0 < -0.5, then execute S217;

[0128] S214. Exit the gap calibration process of deposition process ST2 and return to S212;

[0129] S215, Open cavity inspection, and end the entire calibration process.

[0130] S216, control the Z-axis servo motor of the deposition process position ST2 to reverse and return to S214;

[0131] S217. Perform the chamber cleaning procedure and return to S213.

[0132] In one embodiment, the carrier platform 20 may also be horizontally calibrated before the process begins and before gap calibration is performed. See also... Figure 11 , Figure 11 This is a schematic flowchart of a horizontal calibration method in a first direction provided in an embodiment of this application. The horizontal calibration process includes:

[0133] S310, controls the second ranging module 42 to measure the second distance between itself and the base plate 12 respectively;

[0134] S320, Calculate the second absolute value of the difference between the second distances measured by the second ranging module 42;

[0135] S330. If the second absolute value is greater than the preset horizontal error value, then control the second drive source 52 to drive the mounting plate 24 to swing along the first direction X and return to S310 until the second absolute value is less than or equal to the preset horizontal error value.

[0136] For example, taking two second ranging modules 42 that are symmetrically arranged on both sides of the Y-axis as an example, the second distances measured by the two second ranging modules 42 are X1 and X2, respectively. Then, the second absolute value ΔX = |X2-X1| of the difference between the two second distances X1 and X2 is calculated. If the second absolute value ΔX is greater than the preset horizontal error value δ, it means that the bearing platform 20 is tilted in the X-axis direction and needs to be calibrated. The second drive source 52 can be controlled to drive the mounting plate 24 to swing along the first direction X until the recalculated ΔX ≤ δ.

[0137] Similarly, the horizontal calibration of the bearing platform 20 in the Y-axis direction can be performed, either before S310 or after S330. Please refer to [link / reference]. Figure 12 , Figure 12 This is a flowchart illustrating a second-direction horizontal calibration method provided in an embodiment of this application. The horizontal calibration may include:

[0138] S510 and the third ranging module 43 respectively measure the third distance between themselves and the base plate 12;

[0139] S520. Calculate the third absolute value of the difference between the third distances measured by the third ranging module 43;

[0140] S530. If the third absolute value is greater than the preset horizontal error value, then control the third drive source 53 to drive the mounting plate 24 to swing along the second direction Y and return to S510 until the third absolute value is less than or equal to the preset horizontal error value.

[0141] For example, if there are two third ranging modules 43, symmetrically arranged on both sides of the X-axis, the third distances measured by the two third ranging modules 43 are Y1 and Y2, respectively. Then, the second absolute value ΔY = |Y2-Y1| of the difference between the two second distances Y1 and Y2 is calculated. If the second absolute value ΔY is greater than the preset horizontal error value δ, it means that the bearing platform 20 is tilted in the Y-axis direction and needs to be calibrated. The third drive source 53 can be controlled to drive the mounting plate 24 to swing along the second direction Y until the recalculated ΔY ≤ δ.

[0142] Please see Figure 13 , Figure 13 This is a schematic flowchart of a horizontal calibration method provided in an embodiment of this application. The semiconductor processing equipment includes a deposition process station, two second ranging modules 42 and two third ranging modules 43, all of which are CCD ranging sensors. A preset horizontal error value δ = 0.1 mm is provided. The horizontal calibration method includes:

[0143] S311. Control four CCD ranging sensors to measure two second distances X1 and X2, and two third distances Y1 and Y2 respectively, and calculate the second absolute value ΔX = |X2-X1| and the third absolute value ΔY = |Y2-Y1|.

[0144] S312. If ΔX > 0.1, proceed to the horizontal calibration process in the X-axis direction; otherwise, execute S412.

[0145] S313. If X1 > X2, then control the X-axis servo motor to rotate forward; otherwise, execute S314.

[0146] S314, Control the X-axis servo motor to reverse;

[0147] S315, Exit the X-axis leveling process and return to S312;

[0148] S412. If ΔY > 0.1, then proceed with the horizontal calibration process in the Y-axis direction; otherwise, end the entire horizontal calibration process.

[0149] S413. If Y1 > Y2, then control the Y-axis servo motor to rotate forward; otherwise, execute S414.

[0150] S414, Control the Y-axis servo motor to reverse;

[0151] S415, Exit the Y-axis leveling process and return to S412.

[0152] It should be noted that the gap calibration process and horizontal calibration process of the above embodiments of this application can not only automatically perform horizontal adjustment and gap adjustment before the process, but also improve application scenarios such as the wafer pick-up process and wafer placement process, as detailed below.

[0153] Application Scenario 1: When debugging the gap of the bearing platform 20, it is no longer necessary to use the leveling tool AGS for manual leveling. It is only necessary to execute the gap calibration process, measure the first distance through the first distance measuring module 41, and control the lifting of the bearing platform 20 according to the first drive source 51 to complete the gap debugging. The application of this automatic process can reduce the error of manual debugging, eliminate the need for repeated drilling, and simplify the debugging work.

[0154] Application Scenario 2: During the process in the process chamber, gap calibration and level calibration procedures can be executed to achieve real-time wafer level calibration and real-time gap value calibration, ensuring the film deposition rate and the uniformity of the film within / between the wafer. For example, at the start of the process, the support platform 20 is at its lowest position. At this time, the level calibration procedure is executed to ensure that the support platform 20 is level. Then, the gap value is set, and the support platform 20 is controlled to rise to the set value before the level calibration procedure is executed again. Finally, the gap calibration procedure is executed to ensure that the wafer levelness meets the requirements in each process, and the actual gap value is within the error range of the set value.

[0155] Application Scenario 3: The existing wafer retrieval process is as follows: First, the carrier platform 20 is lowered to its lowest point, the three pins 25 automatically lift the wafer, then the valve of the process chamber is opened, and the robot arm enters the chamber at a low position to perform the wafer retrieval action. If the carrier platform 20 itself is not horizontal or the height of the three pins is inconsistent, the position of the wafer is prone to shift, which may result in the robot arm failing to retrieve the wafer, or even the robot fingers colliding with the wafer. Applying the two calibration processes of this application embodiment, during wafer retrieval, the leveling process can be executed first, and then the support platform 20 can be lowered to its lowest point, at which point D=0 and G=L. Then, the first distance measured by the first ranging module 41 is used to determine whether the wafer is level. If |G-G0|≤0.1mm, the wafer is considered level, and the robot arm retrieves the wafer normally. If 0.1mm<|G-G0|≤0.5mm, the leveling process is executed to make |G-G0|≤0.1mm, and the robot arm performs the wafer retrieval action again. If |G-G0|>0.5mm, the wafer retrieval action is canceled, and the cavity is opened to check the status of the heater and the three pins.

[0156] Application Scenario 4: The existing wafer placement process is as follows: the carrier platform 20 is lowered to its lowest point, the three pins rise, the valve opens, and the robot arm carries the wafer high into the chamber, then performs the wafer placement action. Application Scenario 3's wafer retrieval process already ensures consistent height of the three pins. However, if the levelness of the carrier platform 20 does not meet the requirements, after wafer placement, the carrier platform 20 rises directly, and the wafer may land on the non-level surface of the carrier platform 20, potentially causing positional displacement. To address this issue, the level calibration process of this application embodiment is optimized as follows: when placing the wafer onto the machine, the carrier platform 20 is lowered to its lowest point, a level adjustment process is executed, then the valve opens, and the robot arm carries the wafer high into the chamber to perform the wafer placement action. This ensures that the wafer lands on a level heater surface, preventing wafer slippage.

[0157] The above provides a detailed description of the calibration method for a process chamber, semiconductor processing equipment, and carrier platform provided in this application. Specific examples have been used to illustrate the principles and implementation methods of this application. It should be noted that the descriptions of each embodiment in this application have different emphases; parts not described in detail in a particular embodiment can be referred to in the relevant descriptions of other embodiments.

[0158] The technical features of the present application can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of the present application.

[0159] The above are merely preferred embodiments of this application and do not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A process chamber, comprising a chamber body and at least one process station disposed within the chamber body, each process station comprising a support platform movably connected to the chamber body, and a spray assembly disposed directly above the support platform, characterized in that, The process chamber further includes: At least one first ranging module is disposed on the spray assembly for measuring a first distance between itself and the wafer on the support platform; A first drive source, connected to the support platform, is used to drive the support platform to perform lifting and lowering movements according to the first distance; The spray assembly includes: The air distribution plate has multiple air distribution holes inside. The air distribution plate includes transparent parts that correspond one-to-one with the first ranging module. The transparent parts are arranged to avoid the air distribution holes. The first ranging module is arranged to correspond with the transparent parts. A sealing cover is provided on the gas equalization plate and forms a gas equalization cavity between the sealing cover and the gas equalization plate. The sealing cover is provided with an air inlet hole for gas to be introduced into the gas equalization cavity. The spray assembly further includes: an isolation pipe disposed within the air distribution chamber, the isolation pipe including an inlet end and an outlet end corresponding to each of the at least one first ranging module, the outlet end covering the corresponding first ranging module within the isolation pipe, the sealing cover also having a connection hole, the inlet end being disposed at the connection hole, and the isolation pipe being used to accommodate the cable wiring of the first ranging module.

2. The process chamber according to claim 1, characterized in that, The air distribution disk includes at least two air distribution areas, namely a first air distribution area without the first ranging module and a second air distribution area with the first ranging module. Wherein, the size of the air outlet end of the air distribution hole in the first air distribution area is smaller than the size of the air outlet end of the air distribution hole in the second air distribution area.

3. The process chamber according to claim 2, characterized in that, The air distribution holes in the first air distribution area are straight holes; The outlet end of the air distribution hole in the second air distribution area is a cone shape that opens outward.

4. The process chamber according to claim 2, characterized in that, The first gas uniformity region includes an inner gas uniformity region and an outer gas uniformity region, and the second gas uniformity region is a middle gas uniformity region; The middle ring gas distribution area is arranged around the inner ring gas distribution area, and the outer ring gas distribution area is arranged around the middle ring gas distribution area.

5. The process chamber according to any one of claims 1-4, characterized in that, The support platform includes a support plate and a support base. The support base penetrates the bottom plate of the chamber body and is movably connected to the bottom plate. The support plate is disposed on the top surface of the support base. The support platform also includes a mounting plate connected to the portion of the support base located on the outer side of the chamber body; The first drive source is used to drive the mounting plate to move the carrier plate up and down.

6. The process chamber according to claim 5, characterized in that, The process chamber also includes a fixing plate disposed on the outside of the chamber body, and the fixing plate is provided with a sliding groove extending in the vertical direction; The support platform also includes a slider that cooperates with the slide groove, and the slider is connected to the mounting plate; The first drive source is connected to the slider to drive the slider to move up and down along the groove.

7. The process chamber according to claim 6, characterized in that, The support platform also includes a connecting bracket; The first leveling mechanism is connected to one end of the mounting plate and one end of the connecting bracket, respectively, and is used to adjust the level of the support base in the first direction through the mounting plate; The second leveling mechanism is connected to the other end of the slider and the connecting bracket, respectively, and is used to adjust the level of the support in a second direction through the connecting bracket, wherein the second direction is perpendicular to the first direction.

8. The process chamber according to claim 7, characterized in that, The first leveling mechanism includes: At least two second ranging modules are arranged along the first direction on the top surface of the mounting plate, and the second ranging modules are used to measure a second distance between themselves and the base plate; A second drive source, disposed on the connecting bracket and connected to the mounting plate, is used to drive the mounting plate to swing along the first direction according to the second distance; and / or, The second leveling mechanism includes: At least two third ranging modules are arranged along the second direction on the top surface of the mounting plate, the third ranging modules being used to measure a third distance between themselves and the base plate; A third drive source, disposed on the slider and connected to the other end of the connecting bracket, is used to drive the mounting plate to swing along the second direction via the connecting bracket according to the third distance.

9. A semiconductor processing apparatus, characterized in that, Includes the process chamber as described in any one of claims 1-8.

10. A method for calibrating a carrier platform based on a process chamber as described in any one of claims 1-8, characterized in that, The gap calibration process includes: The first ranging module is controlled to measure the first distance between itself and the wafer on the support platform; The gap value between the spray assembly and the wafer is calculated based on the first distance, and the first absolute value of the difference between the gap value and the preset gap target value is calculated. If the first absolute value is greater than the preset lower limit of gap error and less than or equal to the preset upper limit of gap error, then the first driving source is controlled to drive the carrier platform to rise or fall, and returns to the control of the first ranging module to measure the first distance between itself and the wafer on the carrier platform, until the first absolute value is less than or equal to the preset lower limit of gap error.

11. The calibration method for the bearing platform according to claim 10, characterized in that, The step of calculating the gap value between the spray assembly and the wafer based on the first distance, and calculating the first absolute value of the difference between the gap value and the preset gap target value, further includes: If the first absolute value is greater than the preset upper limit of gap error, then the process chamber is determined to be abnormal.

12. The calibration method for the bearing platform according to claim 10, characterized in that, The gap calibration process is preceded by a horizontal calibration process, which includes: The second ranging module is controlled to measure the second distance between itself and the base plate; Calculate the second absolute value of the difference between the second distances measured by the second ranging module; If the second absolute value is greater than the preset horizontal error value, the second drive source is controlled to drive the mounting plate to swing along the first direction and return to the control of the second ranging module to measure the second distance between itself and the base plate, until the second absolute value is less than or equal to the preset horizontal error value.

13. The calibration method for the bearing platform according to claim 12, characterized in that, Before the second ranging module measures the second distance between itself and the base plate, or if the second absolute value is greater than a preset horizontal error value, the second drive source is controlled to drive the mounting plate to swing along the first direction and return to the second ranging module measuring the second distance between itself and the base plate, until the second absolute value is less than or equal to the preset horizontal error value, the method further includes: The third ranging module is controlled to measure the third distance between itself and the base plate; Calculate the third absolute value of the difference between the third distances measured by the third ranging module; If the third absolute value is greater than the preset horizontal error value, the third drive source is controlled to drive the mounting plate to swing along the second direction and return to control the third ranging module to measure the third distance between itself and the base plate until the third absolute value is less than or equal to the preset horizontal error value.

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