Method for preparing chalcogenide glass substrate 1064 nm and 7.7-10.5 μm antireflection film system

Abstract

A preparation method of a chalcogenide glass substrate 1064nm and 7.7-10.5mu m antireflection film system comprises the following steps: S1, cleaning the chalcogenide glass substrate as a lens and a product; S2, placing the cleaned lens into a fixture and hanging it into a vacuum coating machine; S3, vacuumizing and cleaning the ion source; S4, maintaining the vacuum degree and evaporating a first Y2O3 film layer on a first surface of the lens; S5, evaporating a first YbF3 film layer; S6, evaporating a first ZnSe film layer; S7, evaporating a second YbF3 film layer; S8, evaporating a second ZnSe film layer; S9, evaporating a third YbF3 film layer; S10, evaporating a second Y2O3 film layer; S11, evaporating a fourth YbF3 film layer; S12, evaporating a third ZnSe film layer; S13, evaporating a fifth YbF3 film layer; S14, evaporating a fourth ZnSe film layer; S15, after the fourth ZnSe film layer is completed, cooling and taking out the fixture together with the product and the chalcogenide glass substrate; and S16, repeating the steps S1-S15 to evaporate on a second surface of the lens.

Description

Technical Field

[0001] This disclosure relates to the infrared field, and more specifically to a method for preparing an antireflection film system with a 1064 nm and 7.7-10.5 μm thickness on a chalcogenide glass substrate. Background Technology

[0002] In the field of infrared optical coating, chalcogenide glass has unique advantages as an infrared lens material. The transmittance characteristics of chalcogenide glass make it an ideal choice for infrared lens materials, especially in applications that require high transmittance.

[0003] Chinese patent document CN117567044A discloses a dual-band (near-infrared and far-infrared) antireflection film system deposited on a chalcogenide glass substrate, wherein the transmittance is 97.42% in the 1064nm band and 95.58% in the 8-12μm band. However, further improvements are still needed to enhance the transmittance of the dual-band antireflection film system deposited on the chalcogenide glass substrate. Summary of the Invention

[0004] In view of the problems existing in the background art, one object of this disclosure is to provide a method for preparing an antireflection film system for chalcogenide glass substrates at 1064 nm and 7.7-10.5 μm, which can improve the transmittance in both 1064 nm and 7.7-10.5 μm wavelength bands.

[0005] Therefore, a method for preparing an antireflection film system with a 1064 nm and 7.7-10.5 μm diameter on a chalcogenide glass substrate includes the following steps:

[0006] S1, the surface of the chalcogenide glass substrate used as the lens and the product are cleaned. The chalcogenide glass substrate is IG06 substrate, and the thickness of the chalcogenide glass substrate is 0.9-1.5mm.

[0007] S2, Place the cleaned lens into the fixture, and hang the fixture with the lens in it into the cavity of the vacuum coating machine. Set the temperature of the cavity to 120-130℃.

[0008] S3, the vacuum coating machine starts vacuuming, and the vacuum level reaches 1.5×10⁻⁶. -3 Pa, turn on the auxiliary coating ion source of the vacuum coating machine for cleaning. The cleaning time is 6 minutes. The ion source has an anode voltage of 220V, an anode current of 1.0-2.5A, and an emitter current of 1.3-1.5A.

[0009] S4, maintaining the aforementioned vacuum level, deposit a first Y2O3 film layer on the first surface of the lens by vapor deposition. The deposition rate of the first Y2O3 film layer is 0.3 nm / s, and the film thickness of the first Y2O3 film layer is controlled to be 15 nm ± 1 nm. No ion source-assisted vapor deposition is used.

[0010] S5, deposit a first YbF3 film on the deposited first Y2O3 film. The deposition rate of the first YbF3 film is 0.6 nm / s, and the thickness of the first YbF3 film is controlled to be 66.2 nm ± 3 nm. No ion source-assisted evaporation is used.

[0011] S6, deposit a first ZnSe film on the deposited first YbF3 film. The deposition rate of the first ZnSe film is 0.8 nm / s, and the thickness of the first ZnSe film is controlled to be 48.3 nm ± 2 nm. No ion source is used for evaporation.

[0012] S7, a second YbF3 film is deposited on the first ZnSe film. The deposition rate of the second YbF3 film is 0.6 nm / s, and the thickness of the second YbF3 film is controlled to be 80.2 nm ± 3 nm. Ion source-assisted evaporation is not used.

[0013] S8, a second ZnSe film is deposited on the deposited second YbF3 film. The deposition rate of the second ZnSe film is 0.8 nm / s, and the thickness of the second ZnSe film is controlled to be 608.3 nm ± 5 nm. No ion source-assisted evaporation is used.

[0014] S9, a third YbF3 film is deposited on the deposited second ZnSe film. The deposition rate of the third YbF3 film is 0.6 nm / s, and the film thickness of the third YbF3 film is controlled to be 800 nm ± 5 nm. Ion source-assisted evaporation is not used.

[0015] S10, a second Y2O3 film layer is deposited on the deposited third YbF3 film layer. The deposition rate of the second Y2O3 film layer is 0.3 nm / s, and the film thickness of the second Y2O3 film layer is controlled to be 15 nm ± 1 nm. Ion source assisted evaporation is not used.

[0016] S11, a fourth YbF3 film layer is deposited on the deposited second Y2O3 film layer. The deposition rate of the fourth YbF3 film layer is 0.6 nm / s, and the film thickness of the fourth YbF3 film layer is controlled to be 421.5 nm ± 5 nm. Ion source assisted evaporation is not used.

[0017] S12, a third ZnSe film is deposited on the deposited fourth YbF3 film. The deposition rate of the third ZnSe film is 0.8 nm / s, and the thickness of the third ZnSe film is controlled to be 32 nm ± 2 nm. No ion source-assisted evaporation is used.

[0018] S13, deposit a fifth YbF3 film on the deposited third ZnSe film. The deposition rate of the fifth YbF3 film is 0.6 nm / s, and the film thickness of the fifth YbF3 film is controlled to be 156.8 nm ± 5 nm. No ion source assisted evaporation is used.

[0019] S14, deposit a fourth ZnSe film on the deposited fifth YbF3 film. The deposition rate of the fourth ZnSe film is 0.8 nm / s, and the thickness of the fourth ZnSe film is controlled to be 26 nm ± 1 nm. No ion source-assisted evaporation is used.

[0020] S15, After the fourth ZnSe film layer is deposited by vapor deposition, wait for the vacuum chamber to cool down to below 60°C and then take out the tooling fixture along with the substrate and the product.

[0021] S16, repeat steps S1 to S15, and sequentially deposit the first Y2O3 film, the first YbF3 film, the first ZnSe film, the second YbF3 film, the second ZnSe film, the third YbF3 film, the second Y2O3 film, the fourth YbF3 film, the third ZnSe film, the fifth YbF3 film, and the fourth ZnSe film on the opposite second side of the lens.

[0022] The beneficial effects of this disclosure are as follows: In the preparation method of the 1064 nm and 7.7-10.5 μm antireflection film system of the chalcogenide glass substrate according to this disclosure, by depositing a first Y2O3 film with a thickness of 15 nm ± 1 nm, a first YbF3 film with a thickness of 66.2 nm ± 3 nm, a first ZnSe film with a thickness of 48.3 nm ± 2 nm, a second YbF3 film with a thickness of 80.2 nm ± 3 nm, a second ZnSe film with a thickness of 608.3 nm ± 5 nm, a third YbF3 film with a thickness of 800 nm ± 5 nm, and a second ZnSe film with a thickness of 15 nm ± 1 nm on both sides of the chalcogenide glass substrate used as a lens, the following layers are deposited: Based on tests of the Y2O3 film, the fourth YbF3 film with a thickness of 421.5nm±5nm, the third ZnSe film with a thickness of 32nm±2nm, the fifth YbF3 film with a thickness of 156.8nm±5nm, and the fourth ZnSe film with a thickness of 26nm±1nm, the transmittance of the coated substrate in the 1064nm band (near-infrared band) and the 7.7-10.5μm (far-infrared band) band was 98.2%, and the average transmittance in the 7.7-10.5μm band was 98.8%. That is, the transmittance of both bands exceeded 98%, which is higher than the transmittance of the dual bands mentioned in the patent literature in the background art. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of the structure of the antireflection film system of 1064 nm and 7.7-10.5 μm deposited on both sides of the substrate and the product, according to the preparation method of the chalcogenide glass substrate of this disclosure.

[0024] Figure 2This is a graph showing the transmittance of the antireflection coating system with 1064nm and 7.7-10.5μm coatings on both sides of the substrate in Example 1 in the 1064nm band.

[0025] Figure 3 This is a graph showing the transmittance of the antireflective coating system with 1064nm and 7.7-10.5μm on both sides of the substrate in Example 1 in the 7.7-10.5μm band. Detailed Implementation

[0026] It will be understood that the disclosed embodiments are merely examples of this disclosure, which can be implemented in various forms. Therefore, the specific details disclosed herein should not be construed as limiting, but are intended only as the basis for the claims and as an illustrative basis to teach those skilled in the art how to implement this disclosure in various ways.

[0027] [Preparation method of antireflection coatings at 1064 nm and 7.7-10.5 μm on chalcogenide glass substrates]

[0028] The method for preparing the 1064 nm and 7.7-10.5 μm antireflection film system on a chalcogenide glass substrate according to this disclosure includes the following steps:

[0029] S1, the surface of the chalcogenide glass substrate used as the lens and the product are cleaned. The chalcogenide glass substrate is IG06 substrate, and the thickness of the chalcogenide glass substrate is 0.9-1.5mm.

[0030] S2, Place the cleaned lens into the fixture, and hang the fixture with the lens in it into the cavity of the vacuum coating machine. Set the temperature of the cavity to 120-130℃.

[0031] S3, the vacuum coating machine starts vacuuming, and the vacuum level reaches 1.5×10⁻⁶. -3 Pa, turn on the auxiliary coating ion source of the vacuum coating machine for cleaning. The cleaning time is 6 minutes. The ion source has an anode voltage of 220V, an anode current of 1.0-2.5A, and an emitter current of 1.3-1.5A.

[0032] S4, maintaining the aforementioned vacuum level, deposit a first Y2O3 film layer on the first surface of the lens by vapor deposition. The deposition rate of the first Y2O3 film layer is 0.3 nm / s, and the film thickness of the first Y2O3 film layer is controlled to be 15 nm ± 1 nm. No ion source-assisted vapor deposition is used.

[0033] S5, deposit a first YbF3 film on the deposited first Y2O3 film. The deposition rate of the first YbF3 film is 0.6 nm / s, and the thickness of the first YbF3 film is controlled to be 66.2 nm ± 3 nm. No ion source-assisted evaporation is used.

[0034] S6, deposit a first ZnSe film on the deposited first YbF3 film. The deposition rate of the first ZnSe film is 0.8 nm / s, and the thickness of the first ZnSe film is controlled to be 48.3 nm ± 2 nm. No ion source is used for evaporation.

[0035] S7, a second YbF3 film is deposited on the first ZnSe film. The deposition rate of the second YbF3 film is 0.6 nm / s, and the thickness of the second YbF3 film is controlled to be 80.2 nm ± 3 nm. Ion source-assisted evaporation is not used.

[0036] S8, a second ZnSe film is deposited on the deposited second YbF3 film. The deposition rate of the second ZnSe film is 0.8 nm / s, and the thickness of the second ZnSe film is controlled to be 608.3 nm ± 5 nm. No ion source-assisted evaporation is used.

[0037] S9, a third YbF3 film is deposited on the deposited second ZnSe film. The deposition rate of the third YbF3 film is 0.6 nm / s, and the film thickness of the third YbF3 film is controlled to be 800 nm ± 5 nm. Ion source-assisted evaporation is not used.

[0038] S10, a second Y2O3 film layer is deposited on the deposited third YbF3 film layer. The deposition rate of the second Y2O3 film layer is 0.3 nm / s, and the film thickness of the second Y2O3 film layer is controlled to be 15 nm ± 1 nm. Ion source assisted evaporation is not used.

[0039] S11, a fourth YbF3 film layer is deposited on the deposited second Y2O3 film layer. The deposition rate of the fourth YbF3 film layer is 0.6 nm / s, and the film thickness of the fourth YbF3 film layer is controlled to be 421.5 nm ± 5 nm. Ion source assisted evaporation is not used.

[0040] S12, a third ZnSe film is deposited on the deposited fourth YbF3 film. The deposition rate of the third ZnSe film is 0.8 nm / s, and the thickness of the third ZnSe film is controlled to be 32 nm ± 2 nm. No ion source-assisted evaporation is used.

[0041] S13, deposit a fifth YbF3 film on the deposited third ZnSe film. The deposition rate of the fifth YbF3 film is 0.6 nm / s, and the film thickness of the fifth YbF3 film is controlled to be 156.8 nm ± 5 nm. No ion source assisted evaporation is used.

[0042] S14, deposit a fourth ZnSe film on the deposited fifth YbF3 film. The deposition rate of the fourth ZnSe film is 0.8 nm / s, and the thickness of the fourth ZnSe film is controlled to be 26 nm ± 1 nm. No ion source-assisted evaporation is used.

[0043] S15, After the fourth ZnSe film layer is deposited by vapor deposition, wait for the vacuum chamber to cool down to below 60°C and then take out the tooling fixture along with the substrate and the product.

[0044] S16, repeat steps S1 to S15, and sequentially deposit the first Y2O3 film, the first YbF3 film, the first ZnSe film, the second YbF3 film, the second ZnSe film, the third YbF3 film, the second Y2O3 film, the fourth YbF3 film, the third ZnSe film, the fifth YbF3 film, and the fourth ZnSe film on the opposite second side of the lens.

[0045] In the method for preparing the 1064 nm and 7.7-10.5 μm antireflection coating system on the chalcogenide glass substrate according to the present disclosure, a first Y₂O₃ film with a thickness of 15 nm ± 1 nm, a first YbF₃ film with a thickness of 66.2 nm ± 3 nm, a first ZnSe film with a thickness of 48.3 nm ± 2 nm, a second YbF₃ film with a thickness of 80.2 nm ± 3 nm, a second ZnSe film with a thickness of 608.3 nm ± 5 nm, a third YbF₃ film with a thickness of 800 nm ± 5 nm, and a second Y₂O₃ film with a thickness of 15 nm ± 1 nm are deposited on both sides of the chalcogenide glass substrate used as a lens. The fourth YbF3 film with a thickness of 421.5nm±5nm, the third ZnSe film with a thickness of 32nm±2nm, the fifth YbF3 film with a thickness of 156.8nm±5nm, and the fourth ZnSe film with a thickness of 26nm±1nm were tested based on the 1064nm band (near-infrared band) and 7.7-10.5μm (far-infrared band) of the substrate. The transmittance in the 1064nm band was 98.2%, and the average transmittance in the 7.7-10.5μm band was 98.8%. That is, the transmittance in both bands exceeded 98%, which is higher than the transmittance in both bands of the patent literature mentioned in the background art.

[0046] In the 1064 nm and 7.7-10.5 μm antireflection coating system deposited on the chalcogenide glass substrate of this disclosure, the total thickness of the eleven film layers (constituting the antireflection coating system on each surface) deposited on the first and second surfaces opposite to the first and second surfaces of the chalcogenide glass substrate serving as a lens is 2269.3 nm ± 33 nm.

[0047] The eleven coating layers deposited on each surface consist of two Y₂O₃ layers, five YbF₃ layers, and four ZnSe layers. The two Y₂O₃ layers have the same thickness, while the five YbF₃ layers exhibit a thickness distribution that is larger in the middle and smaller at both ends within the antireflection coating system. Similarly, the four ZnSe layers also exhibit this thickness distribution. This thickness distribution facilitates the buffering and release of coating stress, contributing to a reduction in the overall coating thickness on each surface of the chalcogenide glass substrate. In the antireflection coating system on each surface, the first Y₂O₃ layer is located on the chalcogenide glass substrate. Two pairs of adjacent YbF₃ / ZnSe layers form the first Y₂O₃ layer, and two other pairs of YbF₃ / ZnSe layers are located on the outermost surface of the antireflection coating system. Between the two pairs of YbF₃ / ZnSe layers and the other two pairs of YbF₃ / ZnSe layers lies the third YbF₃ layer and the second Y₂O₃ layer.

[0048] The surface cleaning in step S1 helps improve the surface condition of the first and second surfaces of the substrate and the product, and helps to improve the bonding performance between the antireflective coating system on each surface and the corresponding surface of the substrate and the product.

[0049] The temperature of the cavity in step S2 helps to eliminate stress on each side (i.e., each of the first and second sides) of the substrate and the product, and at the same time helps to promote the growth of the film on each side of the substrate and the product.

[0050] Step S3 uses an ion source for cleaning. The bombardment and sputtering effects of argon ions ionized by the working gas, such as argon, will cause impurities, oil molecules, and oxides adsorbed on the surface of the substrate and the substrate to detach from the substrate surface, thereby significantly improving the interface state and helping to improve the bonding performance between the first Y2O3 film layer and the chalcogenide glass substrate. At the same time, the bombardment of the chalcogenide glass substrate by argon ions can heat the surface of the chalcogenide glass substrate, which helps the growth of the first Y2O3 film layer and reduces the growth stress of the first Y2O3 film layer.

[0051] In one example, in step S1, the thickness of the plating sheet is 1.0 mm.

[0052] In one example, in step S1, the lens surface is cleaned using ultrasound or by hand.

[0053] In one example, in step S2, the temperature of the cavity is set to 130°C.

[0054] In one example, in step S3, the anode current is 1.2A and the emitter current is 1.5A.

[0055] In one example, in step S3, the ion source is a Hall ion source, and argon is used as the working gas.

[0056] In one example, in step S4, the thickness of the first Y₂O₃ film is controlled to be 15 nm; in step S5, the thickness of the first YbF₃ film is controlled to be 66.2 nm; in step S6, the thickness of the first ZnSe film is controlled to be 48.3 nm; in step S7, the thickness of the second YbF₃ film is controlled to be 80.2 nm; in step S8, the thickness of the second ZnSe film is controlled to be 608.3 nm; in step S9, the thickness of the third YbF₃ film is controlled to be 800 nm; in step S10, the thickness of the second Y₂O₃ film is controlled to be 15 nm; in step S11, the thickness of the fourth YbF₃ film is controlled to be 421.5 nm; in step S12, the thickness of the third ZnSe film is controlled to be 32 nm; in step S13, the thickness of the fifth YbF₃ film is controlled to be 156.8 nm; and in step S14, the thickness of the fourth ZnSe film is controlled to be 26 nm.

[0057] In one example, in steps S5 to S9 and steps S11 to S14, the vapor deposition is performed using resistance heating evaporation, that is, the YbF3 film and the ZnSe film are evaporated using resistance heating; in steps S4 and S10, the vapor deposition is performed using electron beam evaporation, that is, the Y2O3 film is evaporated using electron beam evaporation.

[0058] [test]

[0059] Example 1

[0060] Example 1 uses the following steps:

[0061] S1, the surface of the chalcogenide glass substrate used as the lens and the surface of the product are cleaned by ultrasonic cleaning. The chalcogenide glass substrate is IG06 substrate and the thickness of the chalcogenide glass substrate is 1.0mm.

[0062] S2, Place the cleaned lens into the fixture, and hang the fixture with the lens in it into the cavity of the vacuum coating machine. The temperature of the cavity is set to 130℃. The vacuum coating machine is a Hall ion source with a neutralizer manufactured and sold by Chengdu Xiwoke Vacuum Technology Co., Ltd. The Hall ion source with a neutralizer was purchased from Boton Optoelectronics Technology Co., Ltd., and argon is used as the working gas.

[0063] S3, the vacuum coating machine starts vacuuming, and the vacuum level reaches 1.5×10⁻⁶. -3 Pa, turn on the auxiliary coating ion source of the vacuum coating machine for cleaning. The cleaning time is 6 minutes. The ion source has an anode voltage of 220V, an anode current of 1.2A, and an emitter current of 1.5A.

[0064] S4, maintaining the aforementioned vacuum level, deposit a first Y2O3 film layer on the first surface of the lens by evaporation. The deposition rate of the first Y2O3 film layer is 0.3 nm / s, and the film thickness of the first Y2O3 film layer is controlled to be 15 nm. Ion source-assisted evaporation is not used, and electron beam evaporation is used for evaporation.

[0065] S5, deposit a first YbF3 film on the deposited first Y2O3 film. The deposition rate of the first YbF3 film is 0.6 nm / s, and the thickness of the first YbF3 film is controlled to be 66.2 nm. No ion source is used for evaporation. The evaporation is carried out by resistance heating.

[0066] S6, deposit a first ZnSe film on the deposited first YbF3 film. The deposition rate of the first ZnSe film is 0.8 nm / s, and the thickness of the first ZnSe film is controlled to be 48.3 nm. No ion source is used for evaporation. Resistance heating evaporation is used for evaporation.

[0067] S7, a second YbF3 film is deposited on the first ZnSe film. The deposition rate of the second YbF3 film is 0.6 nm / s, and the thickness of the second YbF3 film is controlled to be 80.2 nm. No ion source is used for evaporation, and resistance heating evaporation is used for evaporation.

[0068] S8, a second ZnSe film is deposited on the deposited second YbF3 film. The deposition rate of the second ZnSe film is 0.8 nm / s, and the thickness of the second ZnSe film is controlled to be 608.3 nm. No ion source is used for evaporation, and resistance heating evaporation is used for evaporation.

[0069] S9, a third YbF3 film layer is deposited on the deposited second ZnSe film layer. The deposition rate of the third YbF3 film layer is 0.6 nm / s, and the film thickness of the third YbF3 film layer is controlled to be 800 nm. Ion source-assisted evaporation is not used. Resistance heating evaporation is used for evaporation.

[0070] S10, deposit a second Y2O3 film on the deposited third YbF3 film. The deposition rate of the second Y2O3 film is 0.3 nm / s, and the thickness of the second Y2O3 film is controlled to be 15 nm. No ion source is used for evaporation. Electron beam evaporation is used for evaporation.

[0071] S11, a fourth YbF3 film layer is deposited on the deposited second Y2O3 film layer. The deposition rate of the fourth YbF3 film layer is 0.6 nm / s, and the film thickness of the fourth YbF3 film layer is controlled to be 421.5 nm. Ion source assisted evaporation is not used, and resistance heating evaporation is used for evaporation.

[0072] S12, a third ZnSe film is deposited on the deposited fourth YbF3 film. The deposition rate of the third ZnSe film is 0.8 nm / s, and the film thickness of the third ZnSe film is controlled to be 32 nm. No ion source is used for evaporation. Resistance heating evaporation is used for evaporation.

[0073] S13, a fifth YbF3 film layer is deposited on the deposited third ZnSe film layer. The deposition rate of the fifth YbF3 film layer is 0.6 nm / s, and the film thickness of the fifth YbF3 film layer is controlled to be 156.8 nm. Ion source assisted evaporation is not used, and resistance heating evaporation is used for evaporation.

[0074] S14, a fourth ZnSe film is deposited on the fifth YbF3 film. The deposition rate of the fourth ZnSe film is 0.8 nm / s, and the thickness of the fourth ZnSe film is controlled to be 26 nm. No ion source is used for evaporation. Resistance heating evaporation is used for evaporation.

[0075] S15, After the fourth ZnSe film layer is deposited by vapor deposition, wait for the vacuum chamber to cool down to below 60°C and then take out the tooling fixture along with the substrate and the product.

[0076] S16, repeat steps S1 to S15, and sequentially deposit the first Y2O3 film, the first YbF3 film, the first ZnSe film, the second YbF3 film, the second ZnSe film, the third YbF3 film, the second Y2O3 film, the fourth YbF3 film, the third ZnSe film, the fifth YbF3 film, and the fourth ZnSe film on the opposite second side of the lens.

[0077] Figure 2 This is a graph showing the transmittance of the antireflection coating system with 1064nm and 7.7-10.5μm coatings on both sides of the substrate in Example 1 in the 1064nm band. Figure 3 This is a graph showing the transmittance of the antireflective coating system with 1064nm and 7.7-10.5μm on both sides of the substrate in Example 1 in the 7.7-10.5μm band.

[0078] from Figure 2 It can be seen that the transmittance in the 1064nm band (near-infrared band) is 98.2%; from Figure 3 It can be seen that the average transmittance in the 7.7-10.5μm band (far-infrared band) is 98.8%, that is, the transmittance of both bands exceeds 98%, which is higher than the transmittance of the dual bands mentioned in the patent literature in the background art.

[0079] Several exemplary embodiments have been described in detail above, but this document is not intended to limit itself to the explicitly disclosed combinations. Therefore, unless otherwise stated, the various features disclosed herein can be combined to form several other combinations, which are not shown for simplicity.

Claims

1. A method for preparing an antireflection film system with a 1064 nm and 7.7-10.5 μm diameter on a chalcogenide glass substrate, characterized in that, Including the following steps: S1, the surface of the chalcogenide glass substrate used as the lens and the product are cleaned. The chalcogenide glass substrate is IG06 substrate, and the thickness of the chalcogenide glass substrate is 0.9-1.5mm. S2, Place the cleaned lens into the fixture, and hang the fixture with the lens in it into the cavity of the vacuum coating machine. Set the temperature of the cavity to 120-130°C. S3, the vacuum coating machine starts pumping vacuum, and the vacuum level reaches 1.5×10. -3 Pa, turn on the ion source of the auxiliary coating of the vacuum coating machine for cleaning. The cleaning time is 6 minutes. The anode voltage of the ion source is 220V, the anode current is 1.0-2.5A, and the emitter current is 1.3-1.5A. S4, maintaining the aforementioned vacuum level, deposit a first Y2O3 film layer on the first surface of the lens by vapor deposition. The deposition rate of the first Y2O3 film layer is 0.3 nm / s, and the film thickness of the first Y2O3 film layer is controlled to be 15 nm ± 1 nm. No ion source-assisted vapor deposition is used. S5, deposit a first YbF3 film on the deposited first Y2O3 film. The deposition rate of the first YbF3 film is 0.6 nm / s, and the thickness of the first YbF3 film is controlled to be 66.2 nm ± 3 nm. No ion source-assisted evaporation is used. S6, deposit a first ZnSe film on the deposited first YbF3 film. The deposition rate of the first ZnSe film is 0.8 nm / s, and the thickness of the first ZnSe film is controlled to be 48.3 nm ± 2 nm. No ion source is used for evaporation. S7, a second YbF3 film is deposited on the first ZnSe film. The deposition rate of the second YbF3 film is 0.6 nm / s, and the thickness of the second YbF3 film is controlled to be 80.2 nm ± 3 nm. Ion source-assisted evaporation is not used. S8, a second ZnSe film is deposited on the deposited second YbF3 film. The deposition rate of the second ZnSe film is 0.8 nm / s, and the thickness of the second ZnSe film is controlled to be 608.3 nm ± 5 nm. No ion source-assisted evaporation is used. S9, a third YbF3 film is deposited on the deposited second ZnSe film. The deposition rate of the third YbF3 film is 0.6 nm / s, and the film thickness of the third YbF3 film is controlled to be 800 nm ± 5 nm. Ion source-assisted evaporation is not used. S10, a second Y2O3 film layer is deposited on the deposited third YbF3 film layer. The deposition rate of the second Y2O3 film layer is 0.3 nm / s, and the film thickness of the second Y2O3 film layer is controlled to be 15 nm ± 1 nm. Ion source assisted evaporation is not used. S11, a fourth YbF3 film layer is deposited on the deposited second Y2O3 film layer. The deposition rate of the fourth YbF3 film layer is 0.6 nm / s, and the film thickness of the fourth YbF3 film layer is controlled to be 421.5 nm ± 5 nm. Ion source assisted evaporation is not used. S12, a third ZnSe film is deposited on the deposited fourth YbF3 film. The deposition rate of the third ZnSe film is 0.8 nm / s, and the thickness of the third ZnSe film is controlled to be 32 nm ± 2 nm. No ion source-assisted evaporation is used. S13, deposit a fifth YbF3 film on the deposited third ZnSe film. The deposition rate of the fifth YbF3 film is 0.6 nm / s, and the film thickness of the fifth YbF3 film is controlled to be 156.8 nm ± 5 nm. No ion source assisted evaporation is used. S14, deposit a fourth ZnSe film on the deposited fifth YbF3 film. The deposition rate of the fourth ZnSe film is 0.8 nm / s, and the thickness of the fourth ZnSe film is controlled to be 26 nm ± 1 nm. No ion source-assisted evaporation is used. S15, After the fourth ZnSe film layer is deposited by vapor deposition, wait for the vacuum chamber to cool down to below 60°C and then take out the tooling fixture along with the substrate and the product. S16, repeat steps S1 to S15, and sequentially deposit the first Y2O3 film, the first YbF3 film, the first ZnSe film, the second YbF3 film, the second ZnSe film, the third YbF3 film, the second Y2O3 film, the fourth YbF3 film, the third ZnSe film, the fifth YbF3 film, and the fourth ZnSe film on the opposite second side of the lens.

2. The method for preparing the 1064 nm and 7.7-10.5 μm antireflection film system on a chalcogenide glass substrate according to claim 1, characterized in that, In step S1, the thickness of the substrate is 1.0 mm.

3. The method for preparing the 1064 nm and 7.7-10.5 μm antireflection film system on a chalcogenide glass substrate according to claim 1, characterized in that, In step S1, the lens surface is cleaned using ultrasound or by hand.

4. The method for preparing the 1064 nm and 7.7-10.5 μm antireflection film system on a chalcogenide glass substrate according to claim 1, characterized in that, In step S2, the temperature of the cavity is set to 130°C.

5. The method for preparing the 1064 nm and 7.7-10.5 μm antireflection film system on a chalcogenide glass substrate according to claim 1, characterized in that, In step S3, the anode current is 1.2A and the emitter current is 1.5A.

6. The method for preparing the 1064 nm and 7.7-10.5 μm antireflection film system on a chalcogenide glass substrate according to claim 1, characterized in that, In step S3, the ion source is a Hall ion source, and argon is used as the working gas.

7. The method for preparing the 1064 nm and 7.7-10.5 μm antireflection film system on a chalcogenide glass substrate according to claim 1, characterized in that, In step S4, the thickness of the first Y2O3 film is controlled to be 15 nm; In step S5, the thickness of the first YbF3 film is controlled to be 66.2 nm; In step S6, the thickness of the first ZnSe film is controlled to be 48.3 nm; In step S7, the thickness of the second YbF3 film is controlled to be 80.2 nm; In step S8, the thickness of the second ZnSe film is controlled to be 608.3 nm; In step S9, the thickness of the third YbF3 film is controlled to be 800 nm; In step S10, the thickness of the second Y2O3 film is controlled to be 15 nm; In step S11, the thickness of the fourth YbF3 film is controlled to be 421.5 nm; In step S12, the thickness of the third ZnSe film is controlled to be 32 nm; In step S13, the thickness of the fifth YbF3 film is controlled to be 156.8 nm; In step S14, the thickness of the fourth ZnSe film is controlled to be 26 nm.

8. The method for preparing the 1064 nm and 7.7-10.5 μm antireflection film system on a chalcogenide glass substrate according to claim 1, characterized in that, In steps S5 to S9 and steps S11 to S14, the vapor deposition is performed using resistance heating evaporation. In steps S4 and 10, electron beam evaporation is used for vapor deposition.

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