Electron beam detection device and method for additive manufacturing equipment

Abstract

The embodiments of the present application are related to an electron beam detection device and method for additive manufacturing equipment. The device includes: an electron gun, which is arranged in the additive manufacturing equipment and is used to emit an electron beam; a beam collector, which is arranged on a forming platform in the additive manufacturing equipment and is used to collect the electron beam emitted from the beam outlet; wherein the beam collector and the forming platform are separated by an insulating member; a signal processing module, which is connected to the beam collector and is used to perform signal conversion processing on the electron beam to obtain an actual electron beam current value. The present application collects the electron beam emitted from the beam outlet by the electron gun through the beam collector, so as to accurately collect the electron beam; in addition, the electron beam is subjected to signal conversion processing by the signal processing module to obtain the actual electron beam current value, thereby ensuring the reliability of the actual electron beam current value.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of additive manufacturing technology, and in particular, to an electron beam flow detection device and method for additive manufacturing equipment. Background Art

[0002] Electron beam selective melting is a processing technology that uses a high-energy electron beam as an energy source to form three-dimensional metal parts by scanning metal powder point by point, overlapping line by line, melting and solidifying layer by layer in a vacuum environment. During the processing, the beam signal input by the host computer software is converted into an electrical signal by the peripheral component interconnect standard (PCI) board and transmitted to the high-voltage power supply. The cathode filament of the electron gun is heated by high voltage to cause a large number of electrons to escape, and then the electrons are scattered around by controlling the gate voltage. These scattered electrons are gathered into an electron flow with a very small diameter through the focusing coil, and then deflected to the forming platform under the action of the magnetic field of the deflection coil. The electron beam is controlled by the deflection signal to complete the selective scanning melting under the preset path.

[0003] As mentioned above, the beam parameters set in the upper computer software will undergo multiple links of signal conversion and transmission before reaching the forming platform, which will inevitably cause beam loss, that is, the actual beam current on the forming platform will be less than the set value; in addition, different batches of powder bed electron beam additive manufacturing equipment are assembled with components from the same or different batches, which will cause different beam current errors between devices, seriously affecting the batch stability of the additive manufacturing equipment.

[0004] The quality of the electron beam in powder bed electron beam additive manufacturing equipment is the key to determining the processing quality. Among the related technologies, there are many studies on the calibration of electron beam spot, and they mainly focus on the accuracy of the deflection position of the beam spot and the size and consistency of the beam spot after deflection. However, there is little research on the detection and compensation of the beam setting value and the actual beam value.

[0005] Therefore, it is necessary to improve one or more problems existing in the above-mentioned related technical solutions.

[0006] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present application, and therefore may include information that does not constitute the prior art known to ordinary technicians in the field. Summary of the invention

[0007] The purpose of the embodiments of the present application is to provide an electron beam flow detection device and method for additive manufacturing equipment, thereby overcoming one or more problems caused by limitations and defects of related technologies at least to a certain extent.

[0008] According to a first aspect of an embodiment of the present application, there is provided an electron beam flow detection device for an additive manufacturing device, the device comprising:

[0009] An electron gun, disposed in the additive manufacturing device, for emitting an electron beam;

[0010] A beam collector is arranged on the forming platform in the additive manufacturing device, and is used to collect the electron beam emitted from the beam outlet; wherein the beam collector is separated from the forming platform by an insulating member;

[0011] The signal processing module is connected to the beam collector and is used to perform signal conversion processing on the electron beam to obtain an actual electron beam current value.

[0012] In one embodiment of the present application, the signal processing module includes:

[0013] A first resistor, a second resistor, a third resistor and a fourth resistor are connected in series in sequence; wherein the first resistor is connected to the beam dump;

[0014] a processing unit, the first resistor, the second resistor, the third resistor and the fourth resistor being connected to the processing unit respectively;

[0015] A first voltmeter, a second voltmeter and a third voltmeter, and the first voltmeter, the second voltmeter and the third voltmeter are respectively connected to the processing unit; wherein the first voltmeter is used to measure the total voltage of the second resistor, the third resistor and the fourth resistor, the second voltmeter is used to measure the total voltage of the third resistor and the fourth resistor, and the third voltmeter is used to measure the voltage of the fourth resistor.

[0016] In one embodiment of the present application, the signal processing module is further used to calculate a compensation value according to a theoretical electron beam current value and the actual electron beam current value.

[0017] In one embodiment of the present application, the beam dump is a metal spherical cavity, and the top of the beam dump has an opening, and the center of the opening is colinear with the center of the beam outlet.

[0018] In one embodiment of the present application, the shape of the insulating member matches the bottom shape of the beam dump.

[0019] In one embodiment of the present application, the beam collector and the signal processing module are connected via an airtight plug connector.

[0020] According to a second aspect of an embodiment of the present application, a method for detecting an electron beam for an additive manufacturing device is provided, and detection is performed using the electron beam detection device for an additive manufacturing device described in any one of the above embodiments. The method includes:

[0021] The electron beam emitted from the beam outlet is collected by a beam collector;

[0022] The signal processing module is used to perform signal conversion processing on the electron beam current to obtain an actual electron beam current value.

[0023] In one embodiment of the present application, the signal processing module is used to perform signal conversion processing on the electron beam current to obtain an actual electron beam current value, including:

[0024] Respectively obtaining the resistance values ​​of the second resistor, the third resistor, and the fourth resistor through the processing unit;

[0025] The total voltage of the second resistor, the third resistor and the fourth resistor is measured by the first voltmeter, the total voltage of the third resistor and the fourth resistor is measured by the second voltmeter, and the voltage of the fourth resistor is measured by the third voltmeter;

[0026] The total voltage of the second resistor, the third resistor and the fourth resistor is obtained through the processing unit, the total voltage of the third resistor and the fourth resistor is obtained through the processing unit, and the voltage of the fourth resistor is obtained through the processing unit.

[0027] In one embodiment of the present application, the method of performing signal conversion processing on the electron beam current by using a signal processing module to obtain an actual electron beam current value further includes:

[0028] The actual electron beam current value is calculated by the processing unit, and the calculation formula of the actual electron beam current value is as follows:

[0029] I1=V1 / (R2+R3+R4)(1);

[0030] I2=V2 / (R3+R4)(2);

[0031] I3=V3 / R4(3);

[0032] I = (I1 + I2 + I3) / 3 (4);

[0033] In the formula, I1 represents the electron beam current value flowing through the second resistor, the third resistor and the fourth resistor, I2 represents the electron beam current value flowing through the third resistor and the fourth resistor, I3 represents the electron beam current value flowing through the fourth resistor, I represents the actual electron beam current value, R2 represents the resistance value of the second resistor, R3 represents the resistance value of the third resistor, R4 represents the resistance value of the fourth resistor, V1 represents the total voltage of the second resistor, the third resistor and the fourth resistor, V2 represents the total voltage of the third resistor and the fourth resistor, and V3 represents the voltage of the fourth resistor.

[0034] In one embodiment of the present application, the signal processing module is used to perform signal conversion processing on the electron beam current to obtain an actual electron beam current value, which then includes:

[0035] comparing the actual electron beam current value with the theoretical electron beam current value;

[0036] If the actual electron beam current value is less than the theoretical electron beam current value, the actual electron beam current value is compensated so that the compensated actual electron beam current value is equal to the theoretical electron beam current value.

[0037] The technical solution provided by the embodiments of the present application may have the following beneficial effects:

[0038] In the embodiments of the present application, through the above-mentioned device, on the one hand, the electron beam emitted from the beam outlet of the electron gun is collected by the beam collector, so that the electron beam can be accurately collected; on the other hand, the signal processing module performs signal conversion processing to obtain the actual electron beam current value, thereby ensuring the reliability of the actual electron beam current value. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present application, and together with the specification are used to explain the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0040] Figure 1 A schematic structural diagram of an electron beam flow detection device for additive manufacturing equipment in an exemplary embodiment of the present application is shown;

[0041] Figure 2 A schematic diagram showing the structure of a beam dump in an exemplary embodiment of the present application is shown;

[0042] Figure 3 A cross-sectional view showing a beam dump in an exemplary embodiment of the present application;

[0043] Figure 4 A schematic diagram showing the connection between a beam dump and a signal processing module in an exemplary embodiment of the present application is shown;

[0044] Figure 5 A flowchart showing the steps of an electron beam detection method for an additive manufacturing device in an exemplary embodiment of the present application.

[0045] In the figure: 100, forming chamber; 110, forming platform; 200, beam collector; 210, opening; 300, insulating member; 400, signal processing module; 410, first resistor; 420, second resistor; 430, third resistor; 440, fourth resistor; 450, first voltmeter; 460, second voltmeter; 470, third voltmeter; 500, electron gun. DETAILED DESCRIPTION

[0046] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this application will be more comprehensive and complete and fully convey the concepts of the example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0047] In addition, the accompanying drawings are only schematic illustrations of the embodiments of the present application and are not necessarily drawn to scale. The same reference numerals in the drawings represent the same or similar parts, and their repeated descriptions will be omitted. Some of the block diagrams shown in the accompanying drawings are functional entities and do not necessarily correspond to physically or logically independent entities.

[0048] During the operation of the additive manufacturing equipment, after the electron gun 500 emits an electron beam, the electron beam current will be lost before it reaches the forming platform 110 from the beam outlet. Therefore, there will be a deviation between the actual electron beam current value reaching the forming platform 110 and the set theoretical electron beam current value.

[0049] Based on this, this exemplary embodiment first provides an electron beam flow detection device for additive manufacturing equipment. Figure 1 As shown in , the device includes: an electron gun 500, a beam collector 200 and a signal processing module 400. The electron gun 500 is arranged in the additive manufacturing device and is used to emit an electron beam; the beam collector 200 is arranged on the forming platform 110 in the additive manufacturing device and is used to collect the electron beam emitted from the beam outlet; the beam collector 200 and the forming platform 110 are separated by an insulating member 300; the signal processing module 400 is connected to the beam collector 200 and is used to perform signal conversion processing on the electron beam to obtain the actual electron beam current value.

[0050] It is understandable that a forming chamber 100 is provided in the additive manufacturing equipment, an electron gun 500 is provided at the top of the forming chamber 100, a beam collector 200 is located directly below the exit beam of the electron beam in the forming chamber 100, and the beam collector 200 is separated from the forming platform 110 by an insulating member 300. In practice, after the electron gun 500 emits an electron beam, the electron beam current will be lost before the electron beam reaches the forming platform 110 from the beam outlet, so that there will be a deviation between the actual electron beam current value reaching the forming platform 110 and the set theoretical electron beam current value. Therefore, the present application provides a beam collector 200 and a signal processing module 400. During operation, the electron beam emitted by the electron gun 500 is emitted from the beam outlet to the beam collector 200, so that the beam collector 200 collects the electron beam current. Since the signal processing module 400 is connected to the beam collector 200, when the beam collector 200 collects the electron beam, the collected electron beam is sent to the signal processing module 400 for signal conversion processing to calculate the actual electron beam current value. By setting the beam collector 200, the present application can accurately collect the electron beam current. The reliability of the actual electron beam current value is guaranteed by the signal processing module 400. Among them, the specific process of the signal processing module 400 calculating the actual electron beam current value will be described in the following embodiments, and the present application will not repeat it here.

[0051] It should be noted that the present application can realize the collection of electron beams and the calculation of actual electron beam current values ​​by providing the beam collector 200 and the signal processing module 400. In addition, the present application has a simple structure, which not only saves costs but also facilitates operation.

[0052] In the present application, an insulating member 300 is provided between the beam collector 200 and the forming platform 110, and the insulating member 300 is used to isolate the beam collector 200 from the forming platform 110, so as to facilitate the beam collector 200 to collect the electron beam and the signal processing module 400 to process the electron beam.

[0053] In an exemplary embodiment, the insulating member 300 is made of ceramic or mica. Specifically, the insulating member 300 is made of ceramic or mica, wherein the mica is insulating mica, so that the insulating member 300 has better insulation performance.

[0054] In the embodiment of the present application, through the above-mentioned device, on the one hand, the electron beam emitted from the beam outlet of the electron gun 500 is collected by the beam collector 200, so that the electron beam can be accurately collected; on the other hand, the signal processing module 400 performs signal conversion processing to obtain the actual electron beam current value, thereby ensuring the reliability of the actual electron beam current value.

[0055] Next, we will refer to Figures 2 to 4The various parts of the above-mentioned electron beam flow detection device for additive manufacturing equipment in this example embodiment are described in more detail.

[0056] In one embodiment, reference Figure 4 As shown, the signal processing module 400 includes:

[0057] A first resistor 410, a second resistor 420, a third resistor 430 and a fourth resistor 440 are connected in series in sequence; wherein the first resistor 410 is connected to the beam dump 200;

[0058] A processing unit, a first resistor 410, a second resistor 420, a third resistor 430 and a fourth resistor 440 are respectively connected to the processing unit;

[0059] A first voltmeter 450, a second voltmeter 460 and a third voltmeter 470 are respectively connected to the processing unit; wherein the first voltmeter 450 is used to measure the total voltage of the second resistor 420, the third resistor 430 and the fourth resistor 440, the second voltmeter 460 is used to measure the total voltage of the third resistor 430 and the fourth resistor 440, and the third voltmeter 470 is used to measure the voltage of the fourth resistor 440.

[0060] It is understandable that in order to perform beam current detection at multiple points to ensure the accuracy of beam current detection, the beam collector 200 of the present application is connected in series with four resistors, which are the first resistor 410, the second resistor 420, the third resistor 430 and the fourth resistor 440. The resistance value of the first resistor 410 is R1, the resistance value of the second resistor 420 is R2, the resistance value of the third resistor 430 is R3, and the resistance value of the fourth resistor 440 is R4. At the same time, in order to accurately calculate the actual electron beam current value, the present application also sets a first voltmeter 450, a second voltmeter 460 and a third voltmeter 470. Among them, the first voltmeter 450 is used to measure the total voltage of the second resistor 420, the third resistor 430 and the fourth resistor 440, the second voltmeter 460 is used to measure the total voltage of the third resistor 430 and the fourth resistor 440, and the third voltmeter 470 is used to measure the voltage of the fourth resistor 440. The total voltage of the second resistor 420 , the third resistor 430 and the fourth resistor 440 is recorded as V1 , the total voltage of the third resistor 430 and the fourth resistor 440 is recorded as V2 , and the voltage of the fourth resistor 440 is recorded as V3 .

[0061] After obtaining V1, V2, V3, R2, R3 and R4 through the processing unit, the actual electron beam current value is calculated by the following formula.

[0062] I1=V1 / (R2+R3+R4)(1);

[0063] I2=V2 / (R3+R4)(2);

[0064] I3=V3 / R4(3);

[0065] I=(I1+I2+I3) / 3(4).

[0066] Wherein, I represents the actual electron beam current value, I1 represents the electron beam current value flowing through the second resistor 420 , the third resistor 430 and the fourth resistor 440 , I2 represents the electron beam current value flowing through the third resistor 430 and the fourth resistor 440 , and I3 represents the electron beam current value flowing through the fourth resistor 440 .

[0067] The present application measures the voltages of multiple points through the first voltmeter 450, the second voltmeter 460 and the third voltmeter 470 to calculate the electron beam current values ​​of the multiple points, and averages the electron beam current values ​​of the multiple points to obtain the actual electron beam current value, thereby ensuring the accuracy of the actual electron beam current value. As shown in the above formulas (1) to (4), I1, I2 and I3 are the electron beam current values ​​of three different points respectively. The actual electron beam current value I is obtained by averaging the electron beam current values ​​of the three different points I1, I2 and I3.

[0068] In one embodiment, the signal processing module 400 is further configured to calculate a compensation value according to a theoretical electron beam current value and an actual electron beam current value.

[0069] It can be understood that the compensation value is equal to the theoretical electron beam current value minus the actual electron beam current value. The theoretical electron beam current value is recorded as I0 and the compensation value is recorded as I 补 , then I 补 =I-I0.

[0070] After the electron beam emitted from the beam outlet of the electron beam passes through the beam collector 200, the electron beam is processed by the signal processing module 400 to obtain the actual electron beam current value. In practice, after the electron gun 500 emits the electron beam, the electron beam will be lost before the electron beam reaches the forming platform 110 from the beam outlet. Therefore, there will be a deviation between the actual electron beam current value reaching the forming platform 110 and the set theoretical electron beam current value. Therefore, after the actual electron beam current value is obtained, the actual electron beam current value is compensated according to the theoretical electron beam current value through the signal processing module 400. Specifically, the actual electron beam current value can be compared with the theoretical electron beam current value, and then the control signal can be adjusted by the computer so that the compensated actual electron beam current value is equal to the theoretical electron beam current value.

[0071] It should be noted that in the process of printing using additive manufacturing equipment, the use of electron beams involves stages such as substrate preheating, powder preheating, and selective melting. Therefore, through this application, the actual electron beam current values ​​at different stages can be tested, and the actual electron beam current values ​​at different stages can be compared with the corresponding theoretical electron beam current values, and the calculation and control compensation can be completed, and finally the actual electron beam current values ​​at different stages can be compensated, thereby improving the printing quality and batch stability of additive manufacturing equipment.

[0072] In one embodiment, reference Figure 2 and Figure 3 As shown, the beam dump 200 is a metal spherical cavity, and the top of the beam dump 200 has an opening 210 , and the center of the opening 210 is colinear with the center of the beam outlet.

[0073] It is understandable that in order to better collect the electron beam of the exit beam, the present application designs the beam collector 200 as a metal spherical cavity. The metal spherical cavity structure can collect the electron beam of the exit beam to the maximum extent, prevent the scattered electrons from misleading the detection authenticity, and ensure the accuracy of the electron beam during the collection process. Among them, the opening 210 set at the top of the beam collector 200 can realize that the electron beam of the exit beam is shot into the beam collector 200 through the opening 210. The material of the metal spherical cavity is copper or tungsten.

[0074] In one embodiment, reference Figure 2 and Figure 3 As shown, the shape of the insulating member 300 matches the bottom shape of the beam dump 200 .

[0075] It can be understood that the beam collector 200 is a metal spherical cavity. In order to better separate the beam collector 200 from the forming platform 110, the shape of the insulating member 300 designed in the present application matches the bottom shape of the beam collector 200, thereby smoothly separating the beam collector 200 from the forming platform 110.

[0076] In one embodiment, the beam dump 200 and the signal processing module 400 are connected via an airtight plug connector.

[0077] It can be understood that the airtight plug connector improves the connectivity between the beam dump 200 and the signal processing module 400, thereby achieving stable transmission of the electron beam signal.

[0078] This example embodiment also provides an electron beam detection method for additive manufacturing equipment, which uses any of the above-mentioned electron beam detection devices for additive manufacturing equipment to perform detection, referring to Figure 5 As shown, the method includes step S101 to step S102.

[0079] Wherein, step S101: collecting the electron beam emitted from the beam outlet through the beam collector 200 .

[0080] Step S102: using the signal processing module 400 to perform signal conversion processing on the electron beam current to obtain an actual electron beam current value.

[0081] In step S101, during the printing process using the additive manufacturing device, after the electron gun 500 emits the electron beam, the electron beam current will be lost before the electron beam reaches the forming platform 110 from the beam outlet. Therefore, there will be a deviation between the actual electron beam current value reaching the forming platform 110 and the set theoretical electron beam current value. Therefore, the present application uses the beam collector 200 to collect the electron beam current emitted from the beam outlet.

[0082] In step S102, since the signal processing module 400 is connected to the beam collector 200, after the beam collector 200 collects the electron beam, the collected electron beam is sent to the signal processing module 400 for signal conversion processing to calculate the actual electron beam current value. The present application can accurately collect the electron beam current through the beam collector 200. The reliability of the actual electron beam current value is guaranteed through the signal processing module 400.

[0083] In one embodiment, the signal processing module 400 is used to perform signal conversion processing on the electron beam current to obtain an actual electron beam current value, including:

[0084] Obtaining the resistance value of the second resistor 420, the resistance value of the third resistor 430, and the resistance value of the fourth resistor 440 respectively through the processing unit;

[0085] The total voltage of the second resistor 420, the third resistor 430 and the fourth resistor 440 is measured by the first voltmeter 450, the total voltage of the third resistor 430 and the fourth resistor 440 is measured by the second voltmeter 460, and the voltage of the fourth resistor 440 is measured by the third voltmeter 470;

[0086] The total voltage of the second resistor 420 , the third resistor 430 , and the fourth resistor 440 is obtained through the processing unit, the total voltage of the third resistor 430 and the fourth resistor 440 is obtained through the processing unit, and the voltage of the fourth resistor 440 is obtained through the processing unit.

[0087] In one embodiment, the signal processing module 400 is used to perform signal conversion processing on the electron beam current to obtain an actual electron beam current value, and further includes:

[0088] The actual electron beam current value is calculated by the processing unit. The calculation formula of the actual electron beam current value is as follows:

[0089] I1=V1 / (R2+R3+R4)(1);

[0090] I2=V2 / (R3+R4)(2);

[0091] I3=V3 / R4(3);

[0092] I = (I1 + I2 + I3) / 3 (4);

[0093] In the formula, I1 represents the electron beam current value flowing through the second resistor 420, the third resistor 430 and the fourth resistor 440, I2 represents the electron beam current value flowing through the third resistor 430 and the fourth resistor 440, I3 represents the electron beam current value flowing through the fourth resistor 440, I represents the actual electron beam current value, R2 represents the resistance value of the second resistor 420, R3 represents the resistance value of the third resistor 430, R4 represents the resistance value of the fourth resistor 440, V1 represents the total voltage of the second resistor 420, the third resistor 430 and the fourth resistor 440, V2 represents the total voltage of the third resistor 430 and the fourth resistor 440, and V3 represents the voltage of the fourth resistor 440.

[0094] It is understandable that the method of using the signal processing module 400 to perform signal conversion processing on the electron beam current to obtain the actual electron beam current value has been described in the above device embodiment, and this application will not repeat it here.

[0095] In one embodiment, the signal processing module 400 is used to perform signal conversion processing on the electron beam current to obtain an actual electron beam current value, which then includes:

[0096] comparing the actual electron beam current value with the theoretical electron beam current value;

[0097] If the actual electron beam current value is less than the theoretical electron beam current value, the actual electron beam current value is compensated so that the compensated actual electron beam current value is equal to the theoretical electron beam current value.

[0098] It can be understood that after calculating the actual electron beam current value, the present application compares the actual electron beam current value with the theoretical electron beam current value. When the actual electron beam current value is less than the theoretical electron beam current value, the actual electron beam current value is compensated so that the compensated actual electron beam current value is equal to the theoretical electron beam current value, thereby achieving compensation for the actual electron beam current value.

[0099] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example" or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification.

[0100] Those skilled in the art will readily appreciate other embodiments of the present application after considering the specification and practicing the invention disclosed herein. The present application is intended to cover any modification, use or adaptation of the present application, which follows the general principles of the present application and includes common knowledge or customary technical means in the art that are not disclosed in the present application.

Claims

1. An electron beam detection device for additive manufacturing equipment, characterized in that: The device includes: An electron gun, disposed in the additive manufacturing device, for emitting an electron beam; A beam collector is arranged on the forming platform in the additive manufacturing equipment, and is used to collect the electron beam emitted from the beam outlet; wherein the beam collector and the forming platform are separated by an insulating member; the beam collector is a metal spherical cavity, and the top of the beam collector has an opening, and the center of the opening is collinear with the center of the beam outlet; A signal processing module, connected to the beam collector, for performing signal conversion processing on the electron beam to obtain an actual electron beam current value; Wherein, the signal processing module includes: A first resistor, a second resistor, a third resistor and a fourth resistor are connected in series in sequence; wherein the first resistor is connected to the beam dump; a processing unit, the first resistor, the second resistor, the third resistor and the fourth resistor being connected to the processing unit respectively; A first voltmeter, a second voltmeter and a third voltmeter, and the first voltmeter, the second voltmeter and the third voltmeter are respectively connected to the processing unit; wherein the first voltmeter is used to measure the total voltage of the second resistor, the third resistor and the fourth resistor, the second voltmeter is used to measure the total voltage of the third resistor and the fourth resistor, and the third voltmeter is used to measure the voltage of the fourth resistor; The actual electron beam current value is calculated by the processing unit, and the calculation formula of the actual electron beam current value is as follows: I1=V1 / (R2+R3+R4)(1); I2=V2 / (R3+R4)(2); I3=V3 / R4(3); I = (I1 + I2 + I3) / 3 (4); Wherein, I1 represents the electron beam current value flowing through the second resistor, the third resistor and the fourth resistor, I2 represents the electron beam current value flowing through the third resistor and the fourth resistor, I3 represents the electron beam current value flowing through the fourth resistor, I represents the actual electron beam current value, R2 represents the resistance value of the second resistor, R3 represents the resistance value of the third resistor, R4 represents the resistance value of the fourth resistor, V1 represents the total voltage of the second resistor, the third resistor and the fourth resistor, V2 represents the total voltage of the third resistor and the fourth resistor, and V3 represents the voltage of the fourth resistor; The signal processing module is further used to calculate a compensation value according to the theoretical electron beam current value and the actual electron beam current value, and to compensate the actual electron beam current value so that the compensated actual electron beam current value is equal to the theoretical electron beam current value.

2. The electron beam detection device for additive manufacturing equipment according to claim 1, characterized in that: The shape of the insulating member matches the bottom shape of the beam dump.

3. The electron beam detection device for additive manufacturing equipment according to claim 1, characterized in that: The beam dump is connected to the signal processing module via an airtight plug connector.

4. An electron beam detection method for additive manufacturing equipment, characterized in that: The electron beam flow detection device for additive manufacturing equipment according to any one of claims 1 to 3 is used for detection, and the method comprises: The electron beam emitted from the beam outlet is collected by a beam collector; wherein the beam collector is a metal spherical cavity, and the top of the beam collector has an opening, and the center of the opening is collinear with the center of the beam outlet; Using a signal processing module to perform signal conversion processing on the electron beam current to obtain an actual electron beam current value; The method of using a signal processing module to perform signal conversion processing on the electron beam current to obtain an actual electron beam current value includes: Respectively obtaining the resistance value of the second resistor, the resistance value of the third resistor, and the resistance value of the fourth resistor through the processing unit; The total voltage of the second resistor, the third resistor and the fourth resistor is measured by the first voltmeter, the total voltage of the third resistor and the fourth resistor is measured by the second voltmeter, and the voltage of the fourth resistor is measured by the third voltmeter; Obtaining the total voltage of the second resistor, the third resistor and the fourth resistor through the processing unit, obtaining the total voltage of the third resistor and the fourth resistor through the processing unit, and obtaining the voltage of the fourth resistor through the processing unit; The actual electron beam current value is calculated by the processing unit, and the calculation formula of the actual electron beam current value is as follows: I1=V1 / (R2+R3+R4)(1); I2=V2 / (R3+R4)(2); I3=V3 / R4(3); I = (I1 + I2 + I3) / 3 (4); Wherein, I1 represents the electron beam current value flowing through the second resistor, the third resistor and the fourth resistor, I2 represents the electron beam current value flowing through the third resistor and the fourth resistor, I3 represents the electron beam current value flowing through the fourth resistor, I represents the actual electron beam current value, R2 represents the resistance value of the second resistor, R3 represents the resistance value of the third resistor, R4 represents the resistance value of the fourth resistor, V1 represents the total voltage of the second resistor, the third resistor and the fourth resistor, V2 represents the total voltage of the third resistor and the fourth resistor, and V3 represents the voltage of the fourth resistor; The method of using a signal processing module to perform signal conversion processing on the electron beam current to obtain an actual electron beam current value further includes: comparing the actual electron beam current value with the theoretical electron beam current value; If the actual electron beam current value is less than the theoretical electron beam current value, the actual electron beam current value is compensated so that the compensated actual electron beam current value is equal to the theoretical electron beam current value.

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