Radio frequency front-end module, power amplifier and electronic device

Abstract

The application discloses a radio frequency front-end module, a power amplifier and electronic equipment. The radio frequency front-end module comprises a substrate provided with a first connecting node and a second connecting node, a power amplification chip, a first connecting piece, a second connecting piece and a matching module. The power amplification chip is provided with a first output port and a second output port. The first connecting piece is connected between the first output port and the first connecting node. The second connecting piece is connected between the second output port and the second connecting node. The matching module comprises a balun provided with a first input end and a second input end, a first wire and a second wire. The first wire is connected between the first connecting node and the first input end. The second wire is connected between the second connecting node and the second input end. By arranging the first wire and the second wire, the application can suppress high-order harmonics in a pair of radio frequency differential signals output by the power amplification chip, thereby improving the signal quality of radio frequency signals output by the subsequent balun.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of radio frequency technology, and more particularly, to a radio frequency front-end module, a power amplifier and an electronic device. BACKGROUND

[0002] At present, the radio frequency front-end module has been widely applied in the fields of wireless communication, Internet of Things, smart home and the like, which can process the radio frequency signal (for example, power amplification, modulation and demodulation and the like) to complete the receiving and transmitting tasks of the radio frequency signal.

[0003] In the existing radio frequency front-end module, if the power amplifier adopts a differential architecture, a balun is usually arranged in the matching network to play a role of "differential to single-ended" or "balanced to unbalanced conversion". In addition, a trap circuit formed by an inductor and a capacitor is also arranged in the matching network. Generally, in order to control the second-order impedance point, the trap circuit resonates at the second-order frequency point, while suppressing the second-order harmonic.

[0004] In the differential matching network, since the balun plays a role of high-pass matching, the whole matching network has a poor suppression effect on high-order harmonics (for example, third-order harmonics, fourth-order harmonics and higher-order harmonics), which makes the high-order harmonic performance difficult to meet the system requirements, and reduces the signal quality of the output radio frequency signal. SUMMARY

[0005] The present application provides a radio frequency front-end module, a power amplifier and an electronic device.

[0006] According to a first aspect of the present application, the present application provides a radio frequency front-end module, which comprises a substrate, a power amplification chip, a first connecting member, a second connecting member and a matching module. The substrate is provided with a first connecting node and a second connecting node. The power amplification chip is arranged on the substrate, and the power amplification chip is provided with a first output port and a second output port. The first connecting member is connected between the first output port and the first connecting node, and the second connecting member is connected between the second output port and the second connecting node. The matching module comprises a balun, a first trace and a second trace. The balun is arranged on the substrate and is provided with a first input end and a second input end. The first trace is arranged on the substrate and is connected between the first connecting node and the first input end. The second trace is arranged on the substrate and is connected between the second connecting node and the second input end.

[0007] The embodiment of the present application provides a radio frequency front-end module, a first connecting element in the radio frequency front-end module is connected between a first output port of a power amplifier chip and a first connecting node, and the first connecting element is used for fixedly connecting the power amplifier chip to a substrate. A first wire is connected between the first connecting node and a first input end of a balun, that is, the first output port of the power amplifier chip is connected to the first input end of the balun in sequence through the first connecting element and the first wire. Due to the parasitic inductance of the first connecting element itself and the equivalent inductance of the first wire, the overall inductance between the first output port and the first input end is increased. Specifically, the equivalent inductance of the first wire and the parasitic inductance of the first connecting element can have a relatively high impedance for high-order harmonics in the first radio frequency signal, so that the equivalent inductance of the first wire and the parasitic inductance of the first connecting element are equivalent to a high-impedance path for the high-order harmonics, and the high-order harmonics can be effectively inhibited from passing through the first wire, thereby achieving a good inhibition effect on the high-order harmonics in the first radio frequency signal.

[0008] Similarly, a second connecting element in the radio frequency front-end module is connected between a second output port of the power amplifier chip and a second connecting node, and the second connecting element is also used for fixedly connecting the power amplifier chip to the substrate. A second wire is connected between the second connecting node and a second input end of the balun, that is, the second output port of the power amplifier chip is connected to the second input end of the balun in sequence through the second connecting element and the second wire. Due to the parasitic inductance of the second connecting element itself and the equivalent inductance of the second wire, the overall inductance between the second output port and the second input end is increased. Specifically, the equivalent inductance of the second wire and the parasitic inductance of the second connecting element can have a relatively high impedance for high-order harmonics in the second radio frequency signal, so that the equivalent inductance of the second wire and the parasitic inductance of the second connecting element are equivalent to a high-impedance path for the high-order harmonics, and the high-order harmonics can be effectively inhibited from passing through the second wire, thereby achieving a good inhibition effect on the high-order harmonics in the second radio frequency signal.

[0009] Therefore, by arranging the first wire and the second wire in the matching module, the embodiment of the present application can inhibit high-order harmonics in a pair of radio frequency differential signals output by the power amplifier chip, and thus the signal quality of a radio frequency signal output by the subsequent balun can be improved.

[0010] According to a second aspect of the present application, the embodiments of the present application further provide a power amplifier, which comprises a power amplification circuit and a matching circuit, wherein the power amplification circuit is provided with a first output end and a second output end, the first output end is configured to output a first radio frequency signal, and the second output end is configured to output a second radio frequency signal; the first radio frequency signal and the second radio frequency signal are a pair of radio frequency differential signals. The matching circuit comprises a balun, a first inductor and a second inductor, and the balun is provided with a first input end and a second input end. The first inductor is connected between the first output end and the first input end, and the inductance value of the first inductor is greater than or equal to 50 pH; the second inductor is connected between the second output end and the second input end, and the inductance value of the second inductor is greater than or equal to 50 pH.

[0011] The embodiments of the present application further provide a power amplifier, wherein the first inductor in the power amplifier is connected between the first output end of the power amplification circuit and the first input end of the balun, and the inductance value of the first inductor is greater than or equal to 50 pH. That is, the first inductor herein can be regarded as a large inductor connected between the first output end of the power amplifier and the first input end of the balun, so that the first inductor can have a high impedance to high frequency signals, for example, a high impedance to high-order harmonics in the first radio frequency signal, so that the first inductor is equivalent to a high-impedance path to the high-order harmonics, and can effectively suppress the high-order harmonics from passing through the first inductor, thereby achieving a good suppression effect on the high-order harmonics in the first radio frequency signal.

[0012] Similarly, the second inductor in the power amplifier is connected between the second output end of the power amplification circuit and the second input end of the balun, and the inductance value of the second inductor is greater than or equal to 50 pH. That is, the second inductor herein can be regarded as a large inductor connected between the second output end of the power amplifier and the second input end of the balun, so that the second inductor can have a high impedance to high frequency signals, for example, a high impedance to high-order harmonics in the second radio frequency signal, so that the second inductor is equivalent to a high-impedance path to the high-order harmonics, and can effectively suppress the high-order harmonics from passing through the second inductor, thereby achieving a good suppression effect on the high-order harmonics in the second radio frequency signal.

[0013] Therefore, by arranging the first inductor and the second inductor in the matching circuit, the embodiments of the present application can achieve suppression of high-order harmonics in a pair of radio frequency differential signals output by the power amplifier, and thus can improve the signal quality of the radio frequency signal output by the subsequent balun.

[0014] According to a third aspect of the present application, the embodiments of the present application further provide an electronic device, which comprises the radio frequency front-end module described above. BRIEF DESCRIPTION OF DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings needed in the embodiment description. Obviously, the drawings described in the following are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained from these drawings without creative labor.

[0016] Figure 1 is a circuit structure schematic diagram of a power amplifier provided by the embodiments of the present application.

[0017] Figure 2 is another circuit structure schematic diagram of a power amplifier provided by the embodiments of the present application.

[0018] Figure 3 is still another circuit structure schematic diagram of a power amplifier provided by the embodiments of the present application.

[0019] Figure 4 is a structure schematic diagram of a radio frequency front end module provided by the embodiments of the present application.

[0020] Figure 5 is Figure 4 is a cross-sectional structure schematic diagram of a substrate in the radio frequency front end module shown in FIG.

[0021] Figure 6 is another structure schematic diagram of a radio frequency front end module provided by the embodiments of the present application.

[0022] Figure 7 is Figure 4 is a structure schematic diagram of a primary side, a first trace and a second trace of a balun in the radio frequency front end module shown in FIG.

[0023] Figure 8 is Figure 4 is a structure schematic diagram of a secondary side of a balun in the radio frequency front end module shown in FIG.

[0024] Figure 9 is still another structure schematic diagram of a radio frequency front end module provided by the embodiments of the present application.

[0025] Figure 10 is a structure schematic diagram of an electronic device provided by the embodiments of the present application. DETAILED DESCRIPTION

[0026] In order to make the person skilled in the art better understand the present application, the following will combine the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only some embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0027] This application provides a power amplifier 100 and a corresponding radio frequency front-end module 300. Here, "power amplifier 100" can be understood as the circuit structure corresponding to the radio frequency front-end module 300. This application first describes the specific circuit structure of the power amplifier 100. In this embodiment, the power amplifier 100 is mainly used to amplify the power of the input radio frequency signal, and it can be a push-pull power amplifier, a balanced power amplifier, a Doherty power amplifier, etc.

[0028] Please see Figure 1 The power amplifier 100 may include a power amplifier circuit 10 and a matching circuit 20. The power amplifier circuit 10 has a first output terminal 102 and a second output terminal 104. The first output terminal 102 is used to output a first radio frequency (RF) signal, and the second output terminal 104 is used to output a second RF signal. The first RF signal and the second RF signal are a pair of RF differential signals. That is, the power amplifier circuit 10 in this embodiment is implemented using a differential architecture, which is used to amplify the signal power of a pair of RF differential signals and output the two power-amplified RF signals through the first output terminal 102 and the second output terminal 104, respectively.

[0029] Of course, the power amplifier 100 may also include other power amplifier circuits (not shown in the figure). These other power amplifier circuits can be set in the pre-stage of the power amplifier circuit 10 of the differential architecture, forming a multi-stage power amplifier circuit with the power amplifier circuit 10.

[0030] In this embodiment, the matching circuit 20 is used to perform impedance matching and balanced-to-unbalanced conversion on a pair of radio frequency differential signals output by the power amplifier circuit 10, that is, to convert a pair of radio frequency differential signals into a single radio frequency signal.

[0031] Specifically, the matching circuit 20 can include a balun 210, a first inductor L1 and a second inductor L2. The balun 210 is provided with a first input end 2101 and a second input end 2103. The first inductor L1 is connected between the first output end 102 and the first input end 2101, and the inductance value of the first inductor L1 is greater than or equal to 50 pH. That is, the "first inductor L1" here can be regarded as a large inductor connected between the first output end 102 of the power amplifier 100 and the first input end 2101 of the balun 210, so that the first inductor L1 can have a high impedance to a high frequency signal, for example, a high impedance to a high order harmonic in the first radio frequency signal, so that the first inductor L1 is equivalent to a high resistance path for the high order harmonic, which can effectively suppress the high order harmonic from passing through the first inductor L1, thereby achieving a good suppression effect on the high order harmonic in the first radio frequency signal. The high order harmonic can be a third harmonic or a harmonic higher than the third harmonic, such as a fourth harmonic, a fifth harmonic, etc.

[0032] Specifically, the first inductor L1 is used to suppress a first harmonic signal in the first radio frequency signal. The ratio between the signal frequency of the first harmonic signal and the signal frequency of the fundamental wave signal in the first radio frequency signal is greater than or equal to 3. The "first harmonic signal" here can include multiple high order harmonic signals, for example, the first harmonic signal can include a third harmonic signal and a fourth harmonic signal. For the third harmonic signal, the harmonic impedance formed by the first inductor L1 can reach 3jωL; for the fourth harmonic signal, the harmonic impedance formed by the first inductor L1 can reach 4jωL. Therefore, when the first radio frequency signal includes multiple high order harmonic signals, the first inductor L1 can achieve a good suppression effect to improve the signal quality of the first radio frequency signal.

[0033] In addition, the first inductor L1 also has the effects of adjusting impedance matching and improving common mode rejection. Specifically, the first inductor L1 can be a patch inductor; the first inductor L1 can also be equivalent to a piece of metal wiring, and the specific implementation of the first inductor L1 is not limited in the embodiment.

[0034] In some possible embodiments, the inductance value of the first inductor L1 is less than or equal to 300 pH, so as to avoid that the inductance value of the first inductor L1 is too large and affects the fundamental wave impedance, thereby ensuring the normal work of the power amplifier 100.

[0035] Similarly, the second inductor L2 is connected between the second output end 104 and the second input end 2103, and the inductance value of the second inductor L2 is greater than or equal to 50 pH. That is, the "second inductor L2" here can be regarded as a large inductor connected between the second output end 104 of the power amplifier 100 and the second input end 2103 of the balun 210, so that the second inductor L2 has a high impedance to a high frequency signal, for example, a high impedance to a high order harmonic in the second radio frequency signal, so that the second inductor L2 is equivalent to a high resistance path for the high order harmonic, which can effectively suppress the high order harmonic from passing through the second inductor L2, thereby achieving a good suppression effect on the high order harmonic in the second radio frequency signal. The high order harmonic can be a third harmonic or a harmonic higher than the third harmonic, such as a fourth harmonic, a fifth harmonic, etc.

[0036] Specifically, the second inductor L2 is used to suppress a second harmonic signal in the second radio frequency signal; the ratio between the signal frequency of the second harmonic signal and the signal frequency of the fundamental wave signal in the second radio frequency signal is greater than or equal to 3. The "second harmonic signal" here can include multiple high order harmonic signals, for example, the second harmonic signal can include a third harmonic signal and a fourth harmonic signal. For the third harmonic signal, the harmonic impedance formed by the second inductor L2 can reach 3jωL; for the fourth harmonic signal, the harmonic impedance formed by the second inductor L2 can reach 4jωL. Therefore, when the second radio frequency signal includes multiple high order harmonic signals, the second inductor L2 can achieve a good suppression effect to improve the signal quality of the second radio frequency signal.

[0037] In addition, the second inductor L2 also has the effects of adjusting impedance matching and improving common mode rejection. Specifically, the second inductor L2 can be a patch inductor; the second inductor L2 can also be equivalent to a piece of metal wiring, and the specific implementation of the second inductor L2 is not limited in the embodiment.

[0038] In some possible embodiments, the inductance value of the second inductor L2 is less than or equal to 300 pH, so as to avoid that the inductance value of the second inductor L2 is too large and affects the fundamental wave impedance, thereby ensuring the normal work of the power amplifier 100.

[0039] Therefore, by arranging the first inductor L1 and the second inductor L2 in the matching circuit 20, the application can suppress the high order harmonic in the pair of radio frequency differential signals output by the power amplifier 100, thereby improving the signal quality of the radio frequency signal output by the subsequent balun 210.

[0040] In the embodiment, the balun 210 is involved in the output impedance matching, and is also used for converting a pair of radio frequency differential signals output by the power amplification circuit 10 into a radio frequency single-end signal, and plays a role of "differential to single-end" or "balanced to unbalanced conversion". The balun 210 can include a primary side 2120 and a secondary side 2140 coupled to each other, wherein the primary side 2120 is provided with a first input end 2101 and a second input end 2103. A first end 2105 of the secondary side 2140 is grounded, and a second end 2107 of the secondary side 2140 is used for outputting the radio frequency single-end signal. Specifically, a coupling coefficient (k value) of the balun 210 is greater than or equal to 0.8, that is, the coupling of the balun 210 in the embodiment is strong enough. Therefore, in the case that the first inductor L1 and the second inductor L2 are large inductors, the fundamental impedance that can be achieved by the matching circuit 20 can still be kept in a reasonable range, so as to ensure the normal output of the radio frequency signal.

[0041] In addition, in the case that the coupling of the balun 210 is strong enough, the first inductor L1 and the second inductor L2 being large inductors are beneficial to improve the output impedance matching of the power amplifier 100, so that the whole matching circuit 20 can achieve optimal impedance matching and optimal harmonic suppression without increasing the loss. The specific implementation of the balun 210 can refer to the related description of the balun in the radio frequency front-end module 300 below.

[0042] Please refer to Figure 2 The matching circuit 20 can further include a first harmonic trap unit 230 and a second harmonic trap unit 250. One end of the first harmonic trap unit 230 is connected to the first output end 102, and the other end is grounded. The first harmonic trap unit 230 is used for suppressing the second harmonic signal in the first radio frequency signal. Therefore, the first harmonic trap unit 230 in the embodiment can suppress the harmonic signal in the first radio frequency signal together with the first inductor L1, so as to improve the signal quality of the first radio frequency signal.

[0043] Specifically, the first harmonic trap unit 230 can include a third inductor L3 and a first capacitor C11, which are connected in series and have one end connected to the first output end 102 and the other end grounded. The series resonance frequency of the third inductor L3 and the first capacitor C11 is the signal frequency of the second harmonic signal in the first radio frequency signal, so as to achieve the suppression effect on the second harmonic signal. In the embodiment shown in Figure 2 In the embodiment shown in FIG. 11, the first capacitor C11 is connected in series between the third inductor L3 and the ground end. Of course, the third inductor L3 and the first capacitor C11 can also be interchanged, so that the third inductor L3 is connected in series between the first capacitor C11 and the ground end. The specific value range and specific implementation of the third inductor L3 and the first capacitor C11 are not limited in the embodiment.

[0044] It should be noted that the first trap unit 230 formed by the third inductor L3 and the first capacitor C11 is located between the first output terminal 102 and the first inductor L1 in the embodiment, so that the first radio frequency signal output by the first output terminal 102 flows through the first trap unit 230 before flowing to the first inductor L1, and the first inductor L1 does not affect the resonant frequency of the first trap unit 230, thereby ensuring normal operation of the first trap unit 230.

[0045] Similarly, one end of the second trap unit 250 is connected to the second output terminal 104, and the other end is grounded. The second trap unit 250 is used to suppress the second harmonic signal in the second radio frequency signal. Therefore, the second trap unit 250 in the embodiment can suppress the harmonic signal in the second radio frequency signal together with the second inductor L2, thereby improving the signal quality of the second radio frequency signal.

[0046] Specifically, the second trap unit 250 can include a fourth inductor L4 and a second capacitor C12, and the fourth inductor L4 and the second capacitor C12 are connected in series, one end of which is connected to the second output terminal 104, and the other end is grounded. The series resonant frequency corresponding to the fourth inductor L4 and the second capacitor C12 is the signal frequency of the second harmonic signal in the second radio frequency signal, so as to achieve the suppression effect on the second harmonic signal. In Figure 2 In the embodiment shown, the second capacitor C12 is connected in series between the fourth inductor L4 and the ground terminal. Of course, the fourth inductor L4 and the second capacitor C12 can also be interchanged, so that the fourth inductor L4 is connected in series between the second capacitor C12 and the ground terminal. The specific value range and specific implementation mode of the fourth inductor L4 and the second capacitor C12 are not limited in the embodiment.

[0047] It should be noted that the second trap unit 250 formed by the fourth inductor L4 and the second capacitor C12 is located between the second output terminal 104 and the second inductor L2 in the embodiment, so that the second radio frequency signal output by the second output terminal 104 flows through the second trap unit 250 before flowing to the second inductor L2, and the second inductor L2 does not affect the resonant frequency of the first trap unit 230, thereby ensuring normal operation of the second trap unit 250.

[0048] Since the power amplifier circuit 10 is usually in the form of a chip arranged on a substrate in the radio frequency front-end module 300 corresponding to the power amplifier 100, the first output end 102 and the second output end 104 can be regarded as output ports of the power amplifier circuit 10 on the chip, and the first inductor L1 and the second inductor L2 are usually arranged on the substrate in the form of metal traces. Therefore, when the first output end 102 is connected to the first trace L1 and when the second output end 104 is connected to the second trace L2, a connecting member (for example, a bonding wire or a bump) is needed for the connection, and the connecting member has a corresponding parasitic inductance. Please refer to Figure 3 The above-mentioned parasitic inductances can be the fifth inductor L5 and the sixth inductor L6, respectively. Here, the fifth inductor L5 and the sixth inductor L6 can also be regarded as part of the matching circuit 20.

[0049] Specifically, the impedance from the first input end 2101 of the balun 210 to the first output end 102 includes the impedance of the fifth inductor L5 and the first inductor L1. Therefore, the fifth inductor L5 can participate in the suppression of the high-order harmonics in the first radio frequency signal together with the first inductor L1, so as to further improve the signal quality of the radio frequency signal. Similarly, the impedance from the second input end 2103 of the balun 210 to the second output end 104 includes the impedance of the sixth inductor L6 and the second inductor L2. Therefore, the sixth inductor L6 and the second inductor L2 participate in the suppression of the high-order harmonics in the second radio frequency signal together, so as to further improve the signal quality of the radio frequency signal.

[0050] The first trapping unit 230 is connected to the first inductor L1 to form a common end, and the common end is connected to the first output end 102 through the fifth inductor L5. That is, the first inductor L1 is connected to the first output end 102 through the fifth inductor L5, and one end of the first trapping unit 230 is connected to the common end of the first inductor L1 and the fifth inductor L5. Specifically, the impedance from the other end (the ground end) of the first trapping unit 230 to the first output end 102 includes the impedance of the fifth inductor L5. Therefore, the fifth inductor L5 can suppress the second harmonic signal in the second radio frequency signal together with the first trapping unit 230. By using the fifth inductor L5 to resonate with the third inductor L3 and the first capacitor C11 at the signal frequency of the second harmonic signal, the required inductance of the third inductor L3 in the first trapping unit 230 can be reduced, thereby saving the area occupied by the third inductor L3. In addition, the inductance of the third inductor L3 is set in combination with the parasitic inductance of the connecting member (i.e., the fifth inductor L5), which can more accurately set the series resonance frequency at the frequency point of the second harmonic signal, thereby improving the suppression effect on the second harmonic.

[0051] Similarly, the second trap unit 250 is connected with the second inductor L2 to form a common terminal, which is connected to the second output terminal 104 through the sixth inductor L6. That is, the second inductor L2 is connected to the second output terminal 104 through the sixth inductor L6, and one end of the second trap unit 250 is connected to the common terminal of the second inductor L2 and the sixth inductor L6. Specifically, the impedance from the other end (the ground end) of the second trap unit 250 to the second output terminal 104 includes the impedance of the sixth inductor L6, and therefore the sixth inductor L6 can jointly suppress the second harmonic signal in the second radio frequency signal with the second trap unit 250. By resonating the fourth inductor L4, the second inductor L2 and the sixth inductor L6 at the signal frequency of the second harmonic signal, the inductance required by the fourth inductor L4 in the second trap unit 250 can be reduced, thereby saving the area occupied by the fourth inductor L4. In addition, the inductance of the fourth inductor L4 is set in combination with the parasitic inductance of the connecting part (i.e., the sixth inductor L6), which can more accurately set the series resonance frequency at the frequency point of the second harmonic signal, and improve the suppression effect on the second harmonic.

[0052] In some possible embodiments, the matching circuit 20 can further include a third capacitor C13, one end of the third capacitor C13 being connected to the first end 2105 of the secondary side 2140, and the other end of the third capacitor C13 being grounded. The third capacitor C13 is used to adjust the overall output impedance of the matching circuit 20 to improve the output efficiency of the radio frequency signal. The specific value range and specific implementation mode of the third capacitor C13 are not limited in the present embodiment.

[0053] In some possible embodiments, the matching circuit 20 can further include a fourth capacitor C14, the fourth capacitor C14 being connected between the first output terminal 102 and the second output terminal 104, and the fourth capacitor C14 being used to adjust the overall output impedance of the matching circuit 20 to improve the output efficiency of the radio frequency signal. The specific value range and specific implementation mode of the fourth capacitor C14 are not limited in the present embodiment.

[0054] The present embodiment provides a power amplifier 100, which can include a power amplification circuit 10 and a matching circuit 20. The power amplification circuit 10 is provided with a first output terminal 102 and a second output terminal 104, the first output terminal 102 being used to output a first radio frequency signal, and the second output terminal 104 being used to output a second radio frequency signal, the first radio frequency signal and the second radio frequency signal being a pair of radio frequency differential signals. The matching circuit 20 can include a balun 210, a first inductor L1 and a second inductor L2. The balun 210 is provided with a first input terminal 2101 and a second input terminal 2103.

[0055] The first inductor L1 is connected between the first output end 102 and the first input end 2101, and the inductance value of the first inductor L1 is greater than or equal to 50 pH. That is, the first inductor L1 herein can be regarded as a large inductor connected between the first output end 102 of the power amplifier 100 and the first input end 2101 of the balun 210, so that the first inductor L1 can have a high impedance to high-frequency signals, for example, a high impedance to high-order harmonics in the first radio frequency signal, so that the first inductor L1 is equivalent to a high-impedance path for high-order harmonics, which can effectively suppress the passage of high-order harmonics from the first inductor L1, thereby achieving a better suppression effect on high-order harmonics in the first radio frequency signal.

[0056] The second inductor L2 is connected between the second output end 104 and the second input end 2103, and the inductance value of the second inductor L2 is greater than or equal to 50 pH. That is, the second inductor L2 herein can be regarded as a large inductor connected between the second output end 104 of the power amplifier 100 and the second input end 2103 of the balun 210, so that the second inductor L2 can have a high impedance to high-frequency signals, for example, a high impedance to high-order harmonics in the second radio frequency signal, so that the second inductor L2 is equivalent to a high-impedance path for high-order harmonics, which can effectively suppress the passage of high-order harmonics from the second inductor L2, thereby achieving a better suppression effect on high-order harmonics in the second radio frequency signal.

[0057] Therefore, by arranging the first inductor L1 and the second inductor L2 in the matching circuit 20, the application can suppress high-order harmonics in a pair of radio frequency differential signals output by the power amplifier 100, thereby improving the signal quality of the radio frequency signal output by the subsequent balun 210.

[0058] The radio frequency front-end module 300 corresponding to the power amplifier 100 described above will be introduced below. The radio frequency front-end module 300 herein is an element that integrates two or more than two discrete devices such as radio frequency switches, low-noise amplifiers, filters, duplexers, power amplifiers, etc. into an independent module, thereby improving the integration and hardware performance and miniaturizing the size. Specifically, the radio frequency front-end module 300 can be applied to 4G, 5G electronic devices such as smart phones, tablet computers, smart watches, etc.

[0059] Please refer to Figure 4The radio frequency front-end module 300 can include a substrate 30, a power amplification chip 40, a first connecting member 50, a second connecting member 60, and a matching module 70. The substrate 30 is provided with a first connecting node 302 and a second connecting node 304. The power amplification chip 40 is disposed on the substrate 30 and is provided with a first output port 401 and a second output port 403. The first output port 401 is used to output a first radio frequency signal, and the second output port 403 is used to output a second radio frequency signal. The first radio frequency signal and the second radio frequency signal are a pair of radio frequency differential signals. The first connecting member 50 is connected between the first output port 401 and the first connecting node 302, and the second connecting member 60 is connected between the second output port 403 and the second connecting node 304.

[0060] The matching module 70 can include a balun 720, a first wire 740, and a second wire 760. The balun 720 is disposed around the substrate 30 and is provided with a first input end 7201 and a second input end 7203. The first wire 740 is disposed on the substrate 30 and is connected between the first connecting node 302 and the first input end 7201. That is, the first output port 401 of the power amplification chip 40 is connected to the first input end 7201 of the balun 720 in sequence through the first connecting member 50 and the first wire 740. Due to the parasitic inductance of the first connecting member 50 and the equivalent inductance of the first wire 740, the overall inductance between the first output port 401 and the first input end 7201 is increased. Specifically, the equivalent inductance of the first wire 740 and the parasitic inductance of the first connecting member 50 are superimposed to have a relatively high impedance for high-order harmonics in the first radio frequency signal. The equivalent inductance of the first wire 740 and the parasitic inductance of the first connecting member 50 are equivalent to a high-impedance path for high-order harmonics, which can effectively suppress the passage of high-order harmonics from the first wire 740, thereby achieving a better suppression effect on high-order harmonics in the first radio frequency signal.

[0061] Similarly, the second wire 760 is disposed on the substrate 30 and is connected between the second connecting node 304 and the second input end 7203. That is, the second output port 403 of the power amplification chip 40 is connected to the second input end 7203 of the balun 720 in sequence through the second connecting member 60 and the second wire 760. Due to the parasitic inductance of the second connecting member 60 and the equivalent inductance of the second wire 760, the overall inductance between the second output port 403 and the second input end 7203 is increased. The equivalent inductance of the second wire 760 and the parasitic inductance of the second connecting member 60 are superimposed to have a relatively high impedance for high-order harmonics in the second radio frequency signal. The equivalent inductance of the second wire 760 and the parasitic inductance of the second connecting member 60 are equivalent to a high-impedance path for high-order harmonics, which can effectively suppress the passage of high-order harmonics from the second wire 760, thereby achieving a better suppression effect on high-order harmonics in the second radio frequency signal.

[0062] Therefore, by arranging the balun 720 away from the power amplification chip 40 and connecting between the balun 720 and the power amplification chip 40 through the first trace 740 and the second trace 760, the application can suppress the high-order harmonics in the pair of radio frequency differential signals output by the power amplification chip 40, thereby improving the signal quality of the radio frequency signals output by the subsequent balun 720.

[0063] The specific implementation of the radio frequency front-end module 300 will be described in detail below.

[0064] In this embodiment, the substrate 30 is substantially rectangular and serves to fix and support the elements (e.g., the power amplification chip 40, the first connecting member 50, the second connecting member 60, and the matching module 70, etc.) in the radio frequency front-end module 300. Specifically, the substrate 30 can be a copper-clad laminate. By processing the copper-clad laminate through hole processing, chemical copper plating, electroplating copper, etching, etc., a circuit can be printed on the surface of the substrate 30.

[0065] In this embodiment, the substrate 30 is provided with a first connecting node 302 and a second connecting node 304. The "first connecting node 302" can be understood as the common connecting position of the first connecting member 50 and the first trace 740 on the substrate 30, and the "second connecting node 304" can be understood as the common connecting position of the second connecting member 60 and the second trace 760 on the substrate 30.

[0066] Referring to Figure 5 , the substrate 30 can include a first metal layer 320, a dielectric layer 340, a second metal layer 360, and a support layer 380. The first metal layer 320, the dielectric layer 340, and the second metal layer 360 are sequentially stacked in the thickness direction H of the substrate 30, and the support layer 380 serves to fix the first metal layer 320, the dielectric layer 340, and the second metal layer 360. In the embodiment shown in Figure 5 , the first metal layer 320, the dielectric layer 340, the second metal layer 360, and the support layer 380 are sequentially stacked in the thickness direction H of the substrate 30. In some other possible embodiments, the second metal layer 360, the dielectric layer 340, the first metal layer 320, and the support layer 380 are sequentially stacked in the thickness direction H of the substrate 30. The present embodiment does not limit the stacking order of the first metal layer 320 and the second metal layer 360 in the substrate 30. Of course, the substrate 30 can also include other metal layers (e.g., a third metal layer, a fourth metal layer, etc.), and each adjacent two metal layers are isolated by a dielectric layer.

[0067] Specifically, the first metal layer 320 and the second metal layer 360 are arranged on opposite sides of a dielectric layer 340. The first metal layer 320 can be used to layout wires (e.g., the first wire 740, the second wire 760, and part of the wires in the balun 720, etc.), and the second metal layer 360 can also be used to layout wires (e.g., another part of the wires in the balun 720, etc.). The wires on the first metal layer 320 and the wires on the second metal layer 360 can be electrically connected through conductive vias (not shown in the figure) arranged in the dielectric layer 340, thereby avoiding redundant wires and making the elements in the radio frequency front-end module 300 more flexible in layout. The dielectric layer 340 and the support layer 380 can be made of insulating materials (e.g., glass fiber reinforced polyimide, epoxy resin, etc.) to achieve electrical insulation. Of course, the substrate 30 can also include other metal layers, which can be used to arrange ground metal and other wires, and the present application does not limit this.

[0068] In this embodiment, the thickness of the first metal layer 320 is greater than or equal to 10 μm and less than or equal to 15 μm. The thickness of the second metal layer 360 is greater than or equal to 10 μm and less than or equal to 15 μm. The thickness of the dielectric layer 340 is greater than or equal to 20 μm and less than or equal to 30 μm. Here, the "thickness" refers to the size in the thickness direction H. Therefore, the first metal layer 320, the dielectric layer 340, and the second metal layer 360 in this embodiment are all thin, and when the primary side and the secondary side of the balun 720 are arranged on different metal layers, the balun 720 can have a good coupling coefficient (k value). In this embodiment, the coupling coefficient of the balun 720 is greater than or equal to 0.8, and the specific implementation of the balun 720 is described later.

[0069] In this embodiment, the power amplification chip 40 is arranged on the substrate 30, for example, the power amplification chip 40 can be arranged on the first metal layer 320. The power amplification chip 40 is provided with a first output port 401 and a second output port 403, the first output port 401 is used to output a first radio frequency signal, and the second output port 403 is used to output a second radio frequency signal, the first radio frequency signal and the second radio frequency signal are a pair of radio frequency differential signals. That is, the power amplification chip 40 in this embodiment includes at least a pair of differential power amplification circuits, which are used to amplify the signal power of a pair of radio frequency differential signals, and output the two radio frequency signals amplified in power through the first output port 401 and the second output port 403 respectively. Exemplarily, the power amplification chip 40 can be a Heterojunction Bipolar Transistor (HBT) chip, and the first output port 401 and the second output port 403 are ports on the HBT chip for connecting external devices.

[0070] It can be found here that the power amplification chip 40, the first output port 401 and the second output port 403 in the embodiment correspond to the power amplification circuit 10, the first output 102 and the second output 104 in the power amplifier 100 embodiment respectively. Specifically, the technical features of the power amplification chip 40 in the embodiment can be combined to the power amplification circuit 10 in the above embodiment without conflict. Of course, the technical features of the power amplification circuit 10 in the above embodiment can be combined to the power amplification chip 40 in the embodiment without conflict. Similarly, the technical features of the other two structures can also be combined with each other, which will not be described here.

[0071] In the embodiment, the first connecting member 50 is connected between the first output port 401 and the first connecting node 302, and the second connecting member 60 is connected between the second output port 403 and the second connecting node 304. The first connecting member 50 and the second connecting member 60 respectively realize the electrical connection between the power amplification chip 40 and the substrate 30. Specifically, since the first connecting member 50 and the second connecting member 60 themselves have parasitic inductance, the first connecting member 50 here can be equivalent to the fifth inductance L5 in Figure 3 , and the second connecting member 60 can be equivalent to the sixth inductance L6 in Figure 3 .

[0072] In the embodiment shown in Figure 4 , the power amplification chip 40 can adopt a wire bonding process. The first connecting member 50 can include a first bonding wire 520 connected between the first output port 401 and the first connecting node 302. Specifically, the first bonding wire 520 can be a metal wire such as a copper wire or a silver wire. The second connecting member 60 can include a second bonding wire 620 connected between the second output port 403 and the second connecting node 304. Specifically, the second bonding wire 620 can be a metal wire such as a copper wire or a silver wire.

[0073] In other possible embodiments, the power amplification chip 40 can adopt a flip chip process. Please refer to Figure 6 , the first connecting member 50 can include a first bump 540 connected between the first output port 401 and the first connecting node 302. The second connecting member 60 can include a second bump 640 connected between the second output port 403 and the second connecting node 304. Optionally, the first bump 540 and the second bump 640 can be columnar bodies or spheres, and the materials used can be copper or tin. Exemplarily, the first bump 540 and the second bump 640 are both copper columns. Exemplarily, the first bump 540 and the second bump 640 can also be both tin spheres.

[0074] It should be noted that, in the related art, in order to optimize the fundamental impedance and loss, the balun is usually arranged close to the HBT chip, and a bonding wire is usually used to directly connect to the input end of the balun when the balun is connected to the HBT chip on the substrate (i.e., outside the HBT chip). Since the bonding wire between the HBT chip and the balun can be equivalent to a small inductance, the related art also proposes to use the equivalent inductance of the bonding wire to participate in the suppression of the second harmonic.

[0075] However, since the balun mainly plays a role of high-pass matching, the impedance to high-frequency signals is small, and the equivalent inductance of the bonding wire is also insufficient to suppress high-order harmonics, resulting in poor suppression effect of the entire matching network on high-order harmonics (such as third-order harmonics, fourth-order harmonics, etc.), thereby reducing the signal quality of the radio frequency signal.

[0076] Therefore, in order to improve the suppression effect of the matching network on high-order harmonics, the inventors of the present application arrange the balun 720 away from the power amplification chip 40, and connect between the balun 720 and the power amplification chip 40 through the first wire 740 and the second wire 760.

[0077] In the present embodiment, the first wire 740 is arranged on the substrate 30 and connected between the first connection node 302 and the first input end 7201. Specifically, the length of the first wire 740 is greater than or equal to 50 μm, so that the equivalent inductance value of the first wire 740 can be greater than or equal to 50 pH. Here, the arrangement direction of the power amplification chip 40 and the balun 720 is denoted as the specified direction X, that is, the power amplification chip 40 and the balun 720 are arranged apart in the specified direction X. As an implementation manner, the "length of the first wire 740" is the size of the first wire 740 in the specified direction X, that is, Figure 4 the distance D1 in the formula (1). In some possible embodiments, the distance D1 between the first connection node 302 and the first input end 7201 is greater than or equal to 50 μm, so as to ensure that the length of the first wire 740 connected between the first connection node 302 and the first input end 7201 is greater than or equal to 50 μm.

[0078] Since the length of the first wire 740 is long enough, the first wire 740 can be regarded as a large inductance connected between the first connection node 302 and the first input end 7201 of the balun 720, so that the inductance can have a high impedance to high-order harmonics in the first radio frequency signal. The equivalent inductance of the first wire 740 is equivalent to a high-impedance path for high-order harmonics, which can effectively suppress the passage of high-order harmonics from the first wire 740, thereby achieving a good suppression effect on high-order harmonics in the first radio frequency signal.

[0079] Specifically, the first trace 740 is configured to suppress a first harmonic signal in the first radio frequency signal; a ratio between a signal frequency of the first harmonic signal and a signal frequency of a fundamental wave signal in the first radio frequency signal is greater than or equal to 3. Here, the "first trace 740" can be equivalent to a first inductor L1 in the first radio frequency signal path 700, and the role played by the first trace 740 can be referred to the relevant description of the first inductor L1 above, which will not be repeated here. Figure 3

[0080] In some possible embodiments, the length of the first trace 740 is less than or equal to 300 μm, so that the equivalent inductance value of the first trace 740 can be less than or equal to 300 pH, to avoid that the inductance value of the first trace 740 is too large to affect the fundamental wave impedance, thereby ensuring the normal operation of the radio frequency front-end module 300.

[0081] In the embodiment, the second trace 760 is arranged on the substrate 30 and connected between the second connection node 304 and the second input end 7203, and the length of the second trace 760 can be substantially equal to the length of the first trace 740. Specifically, the length of the second trace 760 is greater than or equal to 50 μm, so that the equivalent inductance value of the second trace 760 can be greater than or equal to 50 pH. Here, the "length of the second trace 760" is the size of the second trace 760 in the specified direction X. That is, Figure 4 the distance D2 between the second connection node 304 and the second input end 7203. In some possible embodiments, the distance D2 between the second connection node 304 and the second input end 7203 is greater than or equal to 50 μm, to ensure that the length of the second trace 760 connected between the second connection node 304 and the second input end 7203 is greater than or equal to 50 μm.

[0082] Since the length of the second trace 760 is long enough, the second trace 760 can be regarded as a large inductor connected between the second connection node 304 and the second input end 7203 of the balun 720, so that the inductor can have a high impedance to high-order harmonics in the second radio frequency signal, so that the equivalent inductance of the second trace 760 is equivalent to a high-impedance path for the high-order harmonics, which can effectively suppress the high-order harmonics from passing through the second trace 760, thereby achieving a better suppression effect on the high-order harmonics in the second radio frequency signal.

[0083] Specifically, the second trace 760 is configured to suppress a second harmonic signal in the second radio frequency signal; a ratio between a signal frequency of the second harmonic signal and a signal frequency of a fundamental wave signal in the second radio frequency signal is greater than or equal to 3. Here, the "second trace 760" can be equivalent to a second inductor L2 in the second radio frequency signal path 700, and the role played by the second trace 760 can be referred to the relevant description of the second inductor L2 above, which will not be repeated here. Figure 3

[0084] ​​In some possible embodiments, the length of the second trace 760 is less than or equal to 300 μm, so that the equivalent inductance value of the second trace 760 can be less than or equal to 300 pH, to avoid the inductance value of the second trace 760 being too large to affect the fundamental impedance, thereby ensuring the normal operation of the radio frequency front end module 300.

[0085] Please refer to Figure 7 and Figure 8 The balun 720 is involved in output impedance matching, and is also used to convert a pair of radio frequency differential signals output by the power amplification chip 40 into a radio frequency single-end signal, to play a role of "differential to single-end", i.e., "balanced-unbalanced conversion". The balun 720 can include a primary side 7210 and a secondary side 7230 coupled to each other. The primary side 7210 is disposed on the first metal layer 320 and is provided with a first input end 7201 and a second input end 7203, and the secondary side 7230 is disposed on the second metal layer 360. In this embodiment, the first metal layer 320, the dielectric layer 340 and the second metal layer 360 can be arranged to be very thin, so that the coupling coefficient of the balun 720 can be greater than or equal to 0.8. For example, the thickness of the first metal layer 320 is greater than or equal to 10 μm and less than or equal to 15 μm. The thickness of the second metal layer 360 is greater than or equal to 10 μm and less than or equal to 15 μm. The thickness of the dielectric layer 340 is greater than or equal to 20 μm and less than or equal to 30 μm.

[0086] Specifically, the primary side 7210 is annularly disposed on the first metal layer 320, and the first trace 740 and the second trace 760 are both disposed on the first metal layer 320. The first trace 740, the primary side 7210 and the second trace 760 are sequentially connected to jointly define a winding region O. In some possible examples, the first trace 740, the primary side 7210 and the second trace 760 can be the same metal trace, to improve the reliability of the connection of the first trace 740, the primary side 7210 and the second trace 760. As an implementation, the line width of the first trace 740 and the second trace 760 can be the same as the line width of the primary side 7210.

[0087] The secondary side 7230 is annularly disposed on the second metal layer 360, the first end 7231 of the secondary side 7230 is grounded, and the second end 7233 of the secondary side 7230 is used to output a radio frequency single-end signal. Exemplarily, when the impedance conversion ratio of the balun 720 requires the winding number of the secondary side 7230 to be greater than 1, the secondary side 7230 can be annularly disposed in a spiral shape.

[0088] It can be found that the balun 720, the primary side 7210, the secondary side 7230, the first input end 7201, the second input end 7203, the first end 7231 and the second end 7233 in the embodiment correspond to the balun 210, the primary side 2120, the secondary side 2140, the first input end 2101, the second input end 2103, the first end 2105 and the second end 2107 in the power amplifier 100 embodiment respectively.

[0089] Referring to Figure 9 , the matching module 70 can further include a third capacitor C23, and the first end 7231 of the secondary side 7230 is connected to one end of the third capacitor C23, and the other end of the third capacitor C23 is grounded. That is, the first end 7231 of the secondary side 7230 is grounded through the third capacitor C23. The third capacitor C23 can be used to adjust the overall output impedance of the matching module 70 to improve the output efficiency of the radio frequency signal.

[0090] As an implementation manner, the third capacitor C23 is arranged on the substrate 30 and located in the winding region O. The first end 7231 of the secondary side 7230 is also located in the winding region O and connected to the third capacitor C23. By arranging the third capacitor C23 in the winding region O defined by the balun 720, the layout space of the substrate 30 can be saved, thereby facilitating the miniaturization design of the radio frequency front end module 300.

[0091] In Figure 9 , the matching module 70 can further include a first trap unit 770 and a second trap unit 780. One end of the first trap unit 770 is connected to the first connection node 302, and the other end is grounded. The first trap unit 770 and the first connecting piece 50 are used together to suppress the second harmonic signal in the first radio frequency signal, so as to improve the signal quality of the first radio frequency signal.

[0092] The power amplification chip 40 can further be provided with a first connection port 405 and a ground port 407, and the first trap unit 770 can include a third trace 7720 and a first capacitor C21. The total inductance equivalent to the first connecting piece 50 and the third trace 7720 and the resonance frequency of the first capacitor C21 are approximately the signal frequency of the second harmonic signal in the first radio frequency signal, so as to achieve the suppression effect on the second harmonic signal.

[0093] Specifically, the third trace 7720 is disposed on the substrate 30 and connected between the first connection node 302 and the first connection port 405. For example, the third trace 7720 and the first connection port 405 can be electrically connected by a bonding wire or a bump. Alternatively, the third trace 7720 can be a whole metal trace disposed on the same metal layer (e.g., the first metal layer 320). The third trace 7720 can also be multiple metal traces disposed on multiple metal layers, which are connected in sequence and connected by a conductive via between two adjacent metal traces.

[0094] In some possible embodiments, the third trace 7720 can be substantially in an "L" shape and disposed around the outer periphery of the power amplifier chip 40. In one aspect, the "L" shape can increase the length of the third trace 7720 to meet the required equivalent inductance of the third trace 7720. In another aspect, the third trace 7720 disposed around the outer periphery of the power amplifier chip 40 can make the overall layout of the RF front-end module 300 more compact and reasonable.

[0095] The first capacitor C21 is connected between the first connection port 405 and the ground port 407. The first capacitor C21 can be integrated in the power amplifier chip 40 or implemented as a surface mounted device (SMD). For example, the first capacitor C21 is integrated in the power amplifier chip 40, which can save the layout space of the substrate 30, thereby facilitating the miniaturization design of the RF front-end module 300.

[0096] Similarly, one end of the second notch unit 780 is connected to the second connection node 304, and the other end is grounded. The second notch unit 780 and the second connection member 60 are used together to suppress the second harmonic signal in the second RF signal, thereby improving the signal quality of the second RF signal.

[0097] The power amplifier chip 40 can further include a second connection port 409. The second notch unit 780 can include a fourth trace 7820 and a second capacitor C22. The total inductance of the second connection member 60 and the fourth trace 7820 and the resonance frequency of the second capacitor C22 are substantially the signal frequency of the second harmonic signal in the second RF signal, so as to achieve the suppression effect on the second harmonic signal.

[0098] Specifically, the fourth trace 7820 is disposed on the substrate 30 and connected between the second connection node 304 and the second connection port 409. For example, the fourth trace 7820 and the second connection port 409 can be electrically connected by a bonding wire or a bump. Specifically, the fourth trace 7820 can be a whole metal trace disposed on the same metal layer (e.g., the first metal layer 320); or the fourth trace 7820 can be multiple metal traces disposed on multiple metal layers, which are connected in sequence and connected by conductive vias between two adjacent metal traces.

[0099] In some possible embodiments, the fourth trace 7820 can be substantially in an "L" shape and disposed around the outer periphery of the power amplifier chip 40. In one aspect, the "L" shape can increase the length of the fourth trace 7820 to meet the required equivalent inductance of the fourth trace 7820; in another aspect, the fourth trace 7820 disposed around the outer periphery of the power amplifier chip 40 can make the overall layout of the RF front-end module 300 more compact and reasonable.

[0100] The second capacitor C22 is connected between the second connection port 409 and the ground port 407. The second capacitor C22 can be integrated in the power amplifier chip 40 or implemented as a surface mounted device (SMD). For example, the second capacitor C22 is integrated in the power amplifier chip 40, which can save the layout space of the substrate 30, thereby facilitating the miniaturization design of the RF front-end module 300.

[0101] In Figure 9 In the illustrated embodiment, the matching module 70 can further include a fourth capacitor C24 integrated in the power amplifier chip 40 and connected between the first output port 401 and the second output port 403. The fourth capacitor C24 is configured to adjust the overall output impedance of the matching module 70 to improve the output efficiency of the RF signal. In this embodiment, the fourth capacitor C24 is integrated in the power amplifier chip 40, which can save the layout space of the substrate 30, thereby facilitating the miniaturization design of the RF front-end module 300.

[0102] It can be found that the first notch unit 770, the third trace 7720, the first capacitor C21, the second notch unit 780, the fourth trace 7820, the second capacitor C22, the third capacitor C23, and the fourth capacitor C24 in the present embodiment correspond to the first notch unit 230, the third inductor L3, the first capacitor C11, the second notch unit 250, the fourth inductor L4, the second capacitor C12, the third capacitor C13, and the fourth capacitor C14 in the power amplifier 100 of the above embodiment, respectively.

[0103] In some possible embodiments, the first output port 401 and the second output port 403 are located on the same side of the power amplification chip 40 and are arranged axially symmetrically about the specified axis L. Exemplarily, the "specified axis L" can be the central axis of the power amplification chip 40. The first connecting member 50 and the second connecting member 60 can be arranged axially symmetrically about the specified axis L; the first wire 740 and the second wire 760 can be arranged axially symmetrically about the specified axis L; the primary side 7210 of the balun 720 can also be arranged axially symmetrically about the specified axis L; the third wire 7720 and the fourth wire 7820 can also be arranged axially symmetrically about the specified axis L; so as to improve the signal balance of the two-way radio frequency signals output by the first output port 401 and the second output port 403 and improve the output quality of the radio frequency signals. Further, the first capacitor C21 and the second capacitor C22 can also be arranged axially symmetrically about the specified axis L in the power amplification chip 40.

[0104] Referring to Figure 10 The embodiment also provides an electronic device 400, which can be a 4G or 5G communication device such as a smart phone, a tablet computer, a smart watch, etc. Specifically, the electronic device 400 can include the radio frequency front end module 300 described above, so as to achieve the collection and transmission of radio frequency signals. In addition, as the 5G technology develops, the requirements for the performance of the radio frequency front end module are higher and higher, and the technical solution of the present application can be applied to a 5G radio frequency front end module, so as to improve the communication performance of the 5G communication device.

[0105] The embodiment of the present application provides a radio frequency front end module 300 and an electronic device 400 provided with the radio frequency front end module 300. The radio frequency front end module 300 can include a substrate 30, a power amplification chip 40, a first connecting member 50, a second connecting member 60, and a matching module 70. The substrate 30 is provided with a first connecting node 302 and a second connecting node 304. The power amplification chip 40 is arranged on the substrate 30 and is provided with a first output port 401 and a second output port 403. The first output port 401 is used for outputting a first radio frequency signal, and the second output port 403 is used for outputting a second radio frequency signal. The first radio frequency signal and the second radio frequency signal are a pair of radio frequency differential signals. The first connecting member 50 is connected between the first output port 401 and the first connecting node 302, and the second connecting member 60 is connected between the second output port 403 and the second connecting node 304.

[0106] The matching module 70 can include a balun 720, a first trace 740 and a second trace 760. The balun 720 is disposed on the substrate 30 and has a first input end 7201 and a second input end 7203. The first trace 740 is disposed on the substrate 30 and connected between the first connection node 302 and the first input end 7201. That is, the first output port 401 of the power amplifier chip 40 is connected to the first input end 7201 of the balun 720 in sequence through the first connecting piece 50 and the first trace 740. Due to the parasitic inductance of the first connecting piece 50 and the equivalent inductance of the first trace 740, the overall inductance between the first output port 401 and the first input end 7201 is increased. Specifically, the equivalent inductance of the first trace 740 and the parasitic inductance of the first connecting piece 50 can have a high impedance to the high-order harmonics in the first radio frequency signal, so that the equivalent inductance of the first trace 740 and the parasitic inductance of the first connecting piece 50 are equivalent to a high-impedance path for the high-order harmonics, which can effectively suppress the high-order harmonics from passing through the first trace 740, thereby achieving a good suppression effect on the high-order harmonics in the first radio frequency signal.

[0107] Similarly, the second trace 760 is disposed on the substrate 30 and connected between the second connection node 304 and the second input end 7203. That is, the second output port 403 of the power amplifier chip 40 is connected to the second input end 7203 of the balun 720 in sequence through the second connecting piece 60 and the second trace 760. Due to the parasitic inductance of the second connecting piece 60 and the equivalent inductance of the second trace 760, the overall inductance between the second output port 403 and the second input end 7203 is increased. The equivalent inductance of the second trace 760 and the parasitic inductance of the second connecting piece 60 can have a high impedance to the high-order harmonics in the second radio frequency signal, so that the equivalent inductance of the second trace 760 and the parasitic inductance of the second connecting piece 60 are equivalent to a high-impedance path for the high-order harmonics, which can effectively suppress the high-order harmonics from passing through the second trace 760, thereby achieving a good suppression effect on the high-order harmonics in the second radio frequency signal.

[0108] Therefore, by disposing the balun 720 away from the power amplifier chip 40 and connecting the balun 720 and the power amplifier chip 40 through the first trace 740 and the second trace 760, the application can suppress the high-order harmonics in the pair of radio frequency differential signals output by the power amplifier chip 40, thereby improving the signal quality of the radio frequency signal output by the subsequent balun 720.

[0109] In this specification, certain terms are used to refer to particular units. As one of ordinary skill in the art will understand, different manufacturers can refer to a certain component by different names and / or different numbering schemes. Reference to a certain term in this specification is not intended to limit the component to which the term refers to particular units, but is intended to cover all components with equivalent functionality. As used in the specification and in the claims, the phrase "comprises" and variations thereof, such as "comprising" and "comprises," means "including but not limited to," and is intended to cover a non-exclusive inclusion. "Consisting essentially of" means including the elements listed after the term, and any other elements that do not materially affect the basic and novel characteristics of the composition or method. "Consisting of" means including the elements listed after the term, and no other elements.

[0110] In the description of the present application, the terms "upper", "lower", "front", "rear", "left", "right", "inner", and "outer" indicate the orientation or positional relationship shown in the drawings, and are used only to facilitate the description of the present application to simplify the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.

[0111] In the present application, unless specifically defined or limited otherwise, the terms "mounting", "connected", "connection", "fixed", and the like should be interpreted broadly. For example, it can be fixed connection, or detachable connection, or integral connection; it can be mechanical connection, or electrical connection; it can be direct connection, or indirect connection through an intermediate medium, or internal communication of two elements, or it can be only surface contact. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0112] In the description of the present application, the description of the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms is not necessarily for the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any appropriate manner in any one or more embodiments or examples. In addition, those skilled in the art can combine and combine the different embodiments or examples described in the present specification and the features of the different embodiments or examples without contradiction.

[0113] In addition, the terms "first", "second", etc. are used only for the purpose of description, and should not be understood as indicating or implying relative importance or implying the number of the technical features indicated. Therefore, the features defined as "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise specifically limited.

[0114] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, and are not limited thereto; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art will understand that the technical solutions described in the foregoing embodiments can still be modified, or some technical features can be replaced by equivalents; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A radio frequency front-end module, characterized in that, include: The substrate is provided with a first connection node and a second connection node; A power amplifier chip is disposed on the substrate; The power amplifier chip is provided with a first output port and a second output port; The first connector is connected between the first output port and the first connection node; The second connector is connected between the second output port and the second connection node; as well as The matching module includes a balun, a first trace, and a second trace; the balun is wound around the substrate and has a first input terminal and a second input terminal; The first trace is disposed on the substrate and connects the first connection node and the first input terminal; the second trace is disposed on the substrate and connects the second connection node and the second input terminal; wherein the length of the first trace is greater than or equal to 50. Alternatively, the distance between the first connection node and the first input terminal is greater than or equal to 50. ; The length of the second trace is greater than or equal to 50. Alternatively, the distance between the second connection node and the second input terminal is greater than or equal to 50. .

2. The radio frequency front-end module according to claim 1, characterized in that, The first output port is used to output a first radio frequency signal, and the second output port is used to output a second radio frequency signal. The first radio frequency signal and the second radio frequency signal are a pair of radio frequency differential signals. The first trace is used to suppress the first harmonic signal in the first radio frequency signal; the ratio between the signal frequency of the first harmonic signal and the signal frequency of the fundamental signal in the first radio frequency signal is greater than or equal to 3; The second trace is used to suppress the second harmonic signal in the second radio frequency signal; the ratio between the signal frequency of the second harmonic signal and the signal frequency of the fundamental signal in the second radio frequency signal is greater than or equal to 3.

3. The radio frequency front-end module according to claim 1, characterized in that, The length of the first trace is less than or equal to 300. ; The length of the second trace is less than or equal to 300. .

4. The radio frequency front-end module according to any one of claims 1 to 3, characterized in that, The first output port is used to output a first radio frequency (RF) signal, and the second output port is used to output a second RF signal. The first RF signal and the second RF signal are a pair of RF differential signals. The matching module further includes a first notch filter unit and a second notch filter unit. One end of the first notch filter unit is connected to the first connection node, and the other end is grounded; the first notch filter unit and the first connection member are used together to suppress the second harmonic signal in the first radio frequency signal. One end of the second notch filter unit is connected to the second connection node, and the other end is grounded; the second notch filter unit and the second connection member are used together to suppress the second harmonic signal in the second radio frequency signal.

5. The radio frequency front-end module according to claim 4, characterized in that, The power amplifier chip also includes a first connection port, a second connection port, and a ground port; The first notch filter unit includes a third trace and a first capacitor. The third trace is wound around the substrate and connected between the first connection node and the first connection port. The first capacitor is integrated into the power amplifier chip and connected between the first connection port and the ground port. The second notch filter unit includes a fourth trace and a second capacitor. The fourth trace is wound around the substrate and connected between the second connection node and the second connection port. The second capacitor is integrated into the power amplifier chip and connected between the second connection port and the ground port.

6. The radio frequency front-end module according to any one of claims 1 to 3, characterized in that, The substrate comprises a first metal layer, a dielectric layer, and a second metal layer stacked sequentially. The balun includes a coupled primary side and a secondary side, the primary side being wound around the first metal layer and having a first input terminal and a second input terminal; The secondary edge is wound around the second metal layer.

7. The radio frequency front-end module according to claim 6, characterized in that, The thickness of the first metal layer is greater than or equal to 10. And less than or equal to 15 ; or / and The thickness of the second metal layer is greater than or equal to 10. And less than or equal to 15 ; or / and The thickness of the dielectric layer is greater than or equal to 20. And less than or equal to 30 .

8. The radio frequency front-end module according to claim 6, characterized in that, The balun is used to convert the radio frequency differential signal output by the power amplifier chip into a radio frequency single-ended signal; the matching module also includes a third capacitor; The first end of the secondary side is connected to one end of the third capacitor, and the other end of the third capacitor is grounded; the second end of the secondary side is used to output the radio frequency single-ended signal.

9. The radio frequency front-end module according to claim 8, characterized in that, The first trace and the second trace are disposed on the first metal layer, and the first trace, the original edge and the second trace are connected in sequence to jointly define the winding area; The third capacitor is disposed on the substrate and located within the winding area; the first end of the secondary side is located within the winding area and connected to the third capacitor.

10. The radio frequency front-end module according to any one of claims 1 to 3, characterized in that, The matching module also includes a fourth capacitor, which is integrated within the power amplifier chip and connected between the first output port and the second output port.

11. The radio frequency front-end module according to any one of claims 1 to 3, characterized in that, The first connector includes a first bonding wire connected between the first output port and the first connection node; the second connector includes a second bonding wire connected between the second output port and the second connection node; or The first connector includes a first protrusion connected between the first output port and the first connection node; the second connector includes a second protrusion connected between the second output port and the second connection node.

12. A power amplifier, characterized in that, include: A power amplifier circuit is provided with a first output terminal and a second output terminal. The first output terminal is used to output a first radio frequency signal, and the second output terminal is used to output a second radio frequency signal. The first radio frequency signal and the second radio frequency signal are a pair of radio frequency differential signals; as well as The matching circuit includes a balun, a first inductor, and a second inductor, wherein the balun has a first input terminal and a second input terminal; The first inductor is connected between the first output terminal and the first input terminal, and the inductance value of the first inductor is greater than or equal to 50 pH. The second inductor is connected between the second output terminal and the second input terminal, and the inductance value of the second inductor is greater than or equal to 50 pH.

13. The power amplifier according to claim 12, characterized in that, The first inductor is used to suppress the first harmonic signal in the first radio frequency signal; the ratio between the signal frequency of the first harmonic signal and the signal frequency of the fundamental signal in the first radio frequency signal is greater than or equal to 3; The second inductor is used to suppress the second harmonic signal in the second radio frequency signal; the ratio between the signal frequency of the second harmonic signal and the signal frequency of the fundamental signal in the second radio frequency signal is greater than or equal to 3.

14. The power amplifier according to claim 12, characterized in that, The inductance value of the first inductor is less than or equal to 300 pH; The inductance value of the second inductor is less than or equal to 300 pH.

15. The power amplifier according to any one of claims 12 to 14, characterized in that, The matching circuit further includes a first notch filter unit and a second notch filter unit; One end of the first notch filter unit is connected to the first output terminal, and the other end is grounded; the first notch filter unit is used to suppress the second harmonic signal in the first radio frequency signal; One end of the second notch filter unit is connected to the second output terminal, and the other end is grounded; the second notch filter unit is used to suppress the second harmonic signal in the second radio frequency signal.

16. The power amplifier according to claim 15, characterized in that, The first notch filter unit includes a third inductor and a first capacitor. One end of the third inductor and the first capacitor are connected in series and connected to the first output terminal, while the other end is grounded. The second notch filter unit includes a fourth inductor and a second capacitor. The fourth inductor and the second capacitor are connected in series, with one end connected to the second output terminal and the other end grounded.

17. The power amplifier according to any one of claims 12 to 14, characterized in that, The coupling coefficient of the balun is greater than or equal to 0.

8.

18. An electronic device, characterized in that, Includes the radio frequency front-end module as described in any one of claims 1 to 11.

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