Adsorption device and adsorption method for semiconductor film-free dicing

Abstract

The present invention provides an adsorption device and an adsorption method for semiconductor filmless dicing. The device ensures the sealing of the semiconductor adsorption interface by using a hydrophilic microstructure to adsorb water, and maintains the unidirectional flow and cleanliness of the fluid by designing filtering, buffering, shunting and other structures, avoids the influence of adsorbed water, abrasive particles and the like on the adsorption circuit, ensures the stability and reliability of semiconductor adsorption, avoids the semiconductor from falling off and moving during the cutting process, and completes interference-resistant and highly stable adsorption. The device is composed of a sealing microstructure, a fluid buffer structure, an anti-back-suction structure, a water-gas separator and other hydraulic components. The device aims to achieve interference-resistant and highly stable adsorption for semiconductor filmless dicing through the treatment of the fluid, the structural design of the suction cup and the substrate, and then achieves high-quality dicing of the semiconductor.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor manufacturing, and in particular relates to an anti-interference high-stability adsorption device and an adsorption method for semiconductor film-free scribing. Background Art

[0002] Integrated circuits are strategic, basic and leading industries that support national economic and social development and safeguard national security. They have become a key symbol of achieving a strong country in science and technology and industry. Semiconductor packaging is an important link in the manufacturing process of integrated circuits. A dicing machine is a segmentation and packaging device specially used for semiconductor manufacturing. It includes multiple components such as a cutting device and an adsorption device. During the processing, an ultra-thin diamond wheel dicing tool is used as a tool, and the high-speed rotation of the air spindle is used to achieve high-precision cutting of semiconductor chip particles. Slicing cutting is mainly used for dicing processing of silicon integrated circuits, light-emitting diodes, lithium niobate, piezoelectric ceramics, gallium arsenide, sapphire, aluminum oxide, iron oxide, quartz, glass, ceramics, solar cells and other materials.

[0003] With the increasing integration of semiconductors and the continuous upgrading of manufacturing processes, film-free dicing has gradually become the mainstream process for semiconductor cutting. This process does not use traditional blue film and other media to fix the semiconductor chip, but directly adsorbs the semiconductor chip on the surface of the suction cup for cutting, and then performs processes such as particle transfer, which has the advantages of high efficiency. However, due to the lack of blue film fixation, semiconductor chip particles are easy to fall off the surface of the suction cup during the cutting process due to changes in cutting force, unstable adsorption gas source, chips blocking the adsorption circuit, water vapor enrichment, etc., resulting in the scrapping of chip particles.

[0004] Compared with film-cutting, film-free cutting has higher requirements on cutting stability and chip adsorption reliability. The traditional adsorption system can no longer meet the needs of film-free cutting. To this end, in view of the above problems, the present invention proposes an anti-interference and high-stability adsorption device for semiconductor film-free cutting, which is conducive to solving the chip particle shedding caused by unstable adsorption during semiconductor film-free cutting and improving the yield of the cutting process. Summary of the invention

[0005] The purpose of the embodiments of the present invention is to provide an anti-interference and highly stable adsorption device for semiconductor film-free dicing and a manufacturing method thereof, so as to alleviate the problems of chip particle shedding and low yield rate caused by poor vacuum adsorption stability in the prior art.

[0006] To solve the above technical problems, the embodiments of the present invention provide the following technical solutions:

[0007] The first aspect of the present invention provides an anti-interference high-stability adsorption device for semiconductor film-free scribing, comprising a vacuum suction cup, the vacuum suction cup comprising a rubber layer and a substrate, the semiconductor is placed on the upper surface of the rubber layer, and the rubber layer is embedded in the substrate, and the upper surface of the rubber layer has a groove;

[0008] The groove is divided into a first microstructure groove and a second microstructure groove. The lower end of the substrate has two branches, which are respectively connected to the water tank and the diaphragm check valve. A one-way valve is provided in the pipeline section between the water tank and the substrate. The diaphragm check valve is connected in sequence to a water-gas separator, a vacuum gauge, a second dryer, a second filter, a vacuum generator, a solenoid valve, a pressure reducing valve, an oil mist separator, a first filter, and a first dryer.

[0009] The vacuum gauge is connected to the vacuum circuit to measure the vacuum degree in the vacuum circuit. The vacuum generator and the compressed air introduced into the vacuum circuit work together to generate a vacuum inside the vacuum suction cup.

[0010] The solenoid valve is electrically connected to the vacuum generator, and the second dryer, the second filter, the oil mist separator, the first filter and the first dryer are all used to ensure the purity of the gas in the vacuum circuit.

[0011] In some modified embodiments of the first aspect of the present invention, a cutting groove, a first microstructure groove and a second microstructure groove are provided around the adsorption hole on the upper surface of the rubber layer;

[0012] The diameter of the adsorption hole is 1 to 3 mm, which is used to pass the vacuum;

[0013] The width of the cutting groove is between 0.05 and 0.5 mm, and the depth is between 0.5 and 2 mm, and is used to accommodate the dicing knife;

[0014] The width of the first microstructure groove and the second microstructure groove are both between 0.005 and 0.1 mm, and the depth is between 0.1 mm and 0.5 mm, and the first microstructure groove and the second microstructure groove are both irradiated with ultraviolet light to increase hydrophilicity for absorbing moisture absorbed during the cutting process, thereby playing a sealing role;

[0015] The spacing between the first microstructure groove and the second microstructure groove is 0.01-0.3 mm; the spacing between the first microstructure groove and the adsorption hole is between 0.01-0.3 mm; the spacing between the second microstructure groove and the cutting groove is between 0.01-0.3 mm.

[0016] In some modified embodiments of the first aspect of the present invention, the substrate comprises an upper substrate and a lower substrate;

[0017] The upper substrate is provided with a plurality of vent holes, and a plurality of radial grooves are processed around each vent hole on the upper surface of the upper substrate, and a gap is provided between the surface of the upper substrate and the lower surface of the rubber layer;

[0018] The lower substrate has a hollow structure inside, and the upper substrate through-hole is connected to the hollow structure, so as to isolate and store the fluid sucked back from the circuit into the substrate, and a lower substrate through-hole is provided at the lower part of the lower substrate for connecting the substrate and the circuit;

[0019] The outer surface of the substrate is provided with an anti-rust layer.

[0020] In some modified embodiments of the first aspect of the present invention, the diaphragm check valve comprises: a fastener, a diaphragm liner, a diaphragm, a valve body liner, a valve body, a gas outlet, and a valve cover;

[0021] The inner wall of the valve body is provided with a valve body lining, the valve cover is covered on the opening of the valve body by fasteners, and the diaphragm is provided on the opening, and the lower surface of the valve cover is provided with a diaphragm lining. When the diaphragm and the diaphragm lining are attached to each other, the fluid passes through the diaphragm check valve and flows into the vacuum circuit. When the vacuum circuit stops working, the diaphragm returns to the upper part of the valve body, and the vacuum circuit is no longer circulated; the diaphragm lining is made of elastic material;

[0022] The gas outlet is arranged on the side wall of the valve body.

[0023] In some modified embodiments of the first aspect of the present invention, a gap is provided between the inlet and the outlet of the water-gas separator;

[0024] The water-gas separator comprises a first flow guide and a second flow guide; the first flow guide is arranged at the inlet of the fluid in the water-gas separator; the second flow guide is arranged at the outlet of the water-gas separation gas;

[0025] The second flow guide member is a pipe structure, and the inner surface of the second flow guide member is provided with staircase-shaped flow guide teeth;

[0026] The outer surface of the second flow guide is a super hydrophobic surface;

[0027] A drain port is provided at the bottom of the water-gas separator.

[0028] In a second aspect, the present invention further provides a method for using an adsorption device, which is used for the above-mentioned anti-interference high-stability adsorption device for semiconductor film-free scribing, comprising the following steps:

[0029] S10: Purify the compressed gas delivered into the vacuum circuit by using the first dryer, the first filter, and the oil mist filter;

[0030] S20: Before the compressed gas passes through the vacuum generator, it is decompressed through the pressure reducing valve and the output pressure is kept stable after the gas passes through;

[0031] S30: the solenoid valve is switched to the open state. After the compressed gas enters the vacuum generator, the gas under the vacuum suction cup is drawn into the vacuum generator, generating a vacuum negative pressure in the substrate, and the suction cup completes the adsorption of the semiconductor workpiece;

[0032] S40: When the gas flows to the vacuum generator, it passes through the water-gas separator. When the mixed fluid carrying water vapor flows into the water-gas separator, it is initially filtered by the first flow guide on the right side of the water-gas separator. Then, the water vapor contacts the second flow guide due to inertia and adsorption force.

[0033] S50: The second filter and the second dryer purify the gas flowing from the suction cup to the vacuum generator to ensure the adsorption stability of the vacuum device. The vacuum meter connected to the second dryer is used to measure the vacuum degree inside the device;

[0034] S60: The left side of the vacuum gauge is connected to the second dryer, and the right side is connected to the diaphragm check valve; the diaphragm check valve is used to prevent the reverse flow of the fluid in the circuit.

[0035] In the present invention, the rubber layer on the surface of the adsorption disk is processed into a first microstructure groove and a second microstructure groove, and is subjected to a hydrophilic treatment. During the cutting process, the two circles of microstructure grooves adsorb cooling water, and at the same time, combined with the rubber deformation between the two circles of microstructure grooves, a good sealing effect is achieved, thereby preventing the chip particles from being unable to be adsorbed or being weakly adsorbed due to poor sealing. At the same time, the lower end of the substrate has two branches, which are respectively connected to the water tank and the diaphragm check valve. The diaphragm check valve can ensure one-way flow. The water-gas separator separates water and gas from the fluid that is about to pass to the vacuum gauge, and the vacuum generator and the compressed air introduced into the vacuum circuit. Working together, a vacuum is generated inside the vacuum suction cup; the compressed gas delivered into the vacuum circuit is purified by the first dryer, the first filter, and the oil mist filter; the solenoid valve is connected to the vacuum generator, the second dryer, the second filter, the oil mist separator, the first filter, and the first dryer to ensure the cleanliness of the gas supplied to the vacuum adsorption device and reduce the adverse effects of impurity pollution on the stability of vacuum adsorption; through the implementation of the technical solution of the present invention, the sealing of the vacuum circuit, the fitting state of the semiconductor workpiece, the unidirectional flow of the fluid in the adsorption device, and the purity of the gas in the vacuum circuit are effectively improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the embodiments are briefly introduced below.

[0037] Figure 1 It is an overall schematic diagram of the anti-interference high-stability adsorption device for semiconductor film-free scribing of the present invention;

[0038] Figure 2 It is a structural schematic diagram of a water-gas separator of the anti-interference high-stability adsorption device for semiconductor film-free scribing of the present invention;

[0039] Figure 3It is a structural schematic diagram of a diaphragm check valve of the anti-interference high-stability adsorption device for semiconductor film-free scribing of the present invention;

[0040] Figure 4 It is a schematic structural diagram of a microstructure groove of the anti-interference high-stability adsorption device for semiconductor film-free scribing of the present invention;

[0041] Figure 5 It is a schematic diagram of the internal structure of the substrate of the anti-interference high-stability adsorption device for semiconductor film-free scribing of the present invention;

[0042] Figure 6 The figure is a schematic diagram of the external structure of the substrate of the invented anti-interference and highly stable adsorption device for semiconductor film-free scribing.

[0043] In the figure: 1, compressed air; 2, first dryer; 3, first filter; 4, oil mist filter; 5, pressure reducing valve; 6, solenoid valve; 7, vacuum generator; 8, second filter; 9, second dryer; 10, vacuum gauge; 11, water-gas separator; 1101, first guide member; 1102, second guide member; 1103, lower surface of second guide member; 1104, drain port; 12, diaphragm check valve; 1201, fastener; 1202, diaphragm lining; 1203, diaphragm; 1204. Valve body lining; 1205. Valve body; 1206. Gas outlet; 1207. Valve cover; 13. Semiconductor workpiece; 14. Rubber layer; 1401. First microstructure groove; 1402. Second microstructure groove; 1403. Cutting groove; 1404. Adsorption hole; 15. Base; 1501. Upper base; 1502. Lower base; 1503. Lower base through hole; 1504. Radiant V-shaped groove; 1505. Upper base through hole; 16. One-way valve; 17. Water tank. DETAILED DESCRIPTION

[0044] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0045] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention.

[0046] Embodiment 1

[0047] like Figure 1-6As shown, this embodiment provides an anti-interference high-stability adsorption device for semiconductor film-free scribing, and the specific use process of the device includes:

[0048] S10: purify the compressed gas delivered into the vacuum circuit by using the first dryer 2, the first filter 3 and the oil mist filter 4 to ensure the cleanliness of the gas supplied to the vacuum adsorption system and reduce the adverse effects of impurity pollution on the vacuum adsorption accuracy;

[0049] S20: Since the gas pressure inputted from the gas source is relatively high and there is a large pressure fluctuation, the pressure reducing valve 5 is required to reduce the pressure before the compressed gas passes through the vacuum generator 7. The pressure reducing valve 5 is characterized in that it can reduce the pressure and ensure the stability of the output pressure after the gas passes through;

[0050] S30: Solenoid valve 6 is switched to Figure 1 In the open state, the compressed gas smoothly enters the vacuum generator 7, and then the gas under the vacuum suction cup is sucked into the vacuum generator 7 and the adsorption device is removed, thereby generating a vacuum negative pressure in the substrate 15, and completing the adsorption of the semiconductor workpiece by the vacuum suction cup;

[0051] When the gas below the vacuum suction cup flows toward the vacuum generator 7, the gas will carry water along the loop to flow toward the vacuum generator 7, thereby causing instability in the air pressure of the vacuum loop.

[0052] S40: When the gas below the vacuum suction cup flows to the vacuum generator 7, it will pass through the water vapor separator 11. When the gas carrying water vapor flows into the water vapor separator 11, the fluid will first be preliminarily filtered by the first guide 1101 on the right side of the water vapor separator 11, and then before the fluid flows out of the water vapor separator 11, it will be filtered again by the second guide 1102 on the left side of the water vapor separator 11, wherein the first guide 1101 and the second guide 1102 are not in direct contact, which can ensure that the water vapor is fully filtered for the first time, and the water vapor condenses into small water droplets on the surface of the stair-shaped second guide 1102. With the continuous condensation of water vapor, the number of small water droplets gathered continues to increase, and finally converges into large water droplets. When the gravity of the large water droplets is greater than the adhesion between them and the lower surface 1103 of the second guide, the large water droplets will fall to the drain port 1104 at the bottom of the water vapor separator 11, and flow along the pipeline into the water tank 17 connected to the water vapor separator 11, completing the water vapor separation.

[0053] In process S40, the pipeline should ensure that water flows smoothly into the water tank 17, so the wall surface of the pipeline is set as a guide surface, and the second guide member 1102 is characterized in that the lower surface 1103 of the second guide member 1102 should ensure that large water droplets flow smoothly into the bottom of the water vapor separator 11, and it is necessary to reduce the adhesion between the large water droplets and the lower surface 1103 of the second guide member 1102, so the surface is set as a super hydrophobic surface.

[0054] S50: When the gas below the vacuum suction cup flows to the vacuum generator 7, it will pass through purifiers, which are the second dryer 9 and the second filter 8. The purifier is characterized in that the gas that will flow into the vacuum generator 7 is purified in turn.

[0055] S60: When the gas below the vacuum suction cup flows to the vacuum generator 7, it will pass through the vacuum gauge 10. The vacuum gauge 10 is connected to the adsorption device, wherein the left side is connected to the purification device (the second dryer 9, the second filter 8), and the right side is connected to the water-gas separator 11. The vacuum gauge 10 can be used to visually see the vacuum degree of the fluid after filtering through the water-gas separator 11, so as to facilitate controlling the vacuum degree within the range required by the process.

[0056] When the gas below the vacuum suction cup flows to the vacuum generator 7, it will pass through the diaphragm 1203 check valve 12. The diaphragm 1203 check valve 12 includes: a fastener 1201, a diaphragm lining 1202, a diaphragm 1203, a valve body lining 1204, a valve body 1205, a gas outlet 1206 and a valve cover 1207. The left side of the diaphragm 1203 check valve 12 is connected to the filter, and the right side of the diaphragm 1203 check valve 12 is directly connected to the base 15. The valve body 1205 can reduce the opening and closing time of the valve body 1205 and improve the reaction rate of the valve body 1205. The diaphragm lining 1202 can alleviate the impact force at the moment of attachment of the diaphragm 1203 and ensure the tightness of the attachment of the diaphragm 1203 and the lining. After the gas passes through the diaphragm 1203 check valve 12, it is discharged from the gas outlet 1206. The diaphragm 1203 check valve 12 can prevent the gas on the left side of the diaphragm 1203 check valve 12 in the device from flowing back to the surface of the semiconductor workpiece, thereby destroying the highly stable adsorption state of the vacuum device. Therefore, the diaphragm 1203 check valve 12 strictly abides by the one-way flow principle, and the diaphragm 1203 check valve 12 can effectively eliminate the water hammer effect caused by the backflow of the medium.

[0057] The semiconductor workpiece 13 to be processed is placed on the rubber layer 14 in the vacuum suction cup. The grooves are divided into a first microstructure groove 1401 and a second microstructure groove 1402 adapted to the wafer 13. The adsorption holes 1404 opened on the upper surface of the rubber layer 14 adsorb and fix the semiconductor workpiece 13. During the adsorption process, the microstructure grooves around the adsorption holes 1404 have two functions. On the one hand, they ensure the sealing between the semiconductor workpiece and the rubber layer 14, and on the other hand, they ensure the horizontal state of the semiconductor workpiece during the dicing process. The sealing is characterized in that it can ensure that the semiconductor workpiece maintains high and stable adsorption, relieve the equipment exhaust rate, and use a relatively small vacuum equipment to meet the vacuum pressure requirements. The horizontal state is characterized in that it can ensure the horizontal movement of the cutting knife and the consistent dicing depth of the semiconductor workpiece.

[0058] The size and number of the microstructure grooves are determined according to factors such as the vacuum degree of the adsorption device, the size of the semiconductor workpiece, and the force between the semiconductor workpiece and the adsorption holes 1404 during the operation of the equipment.

[0059] In this example, a cutting groove, a first microstructure groove and a second microstructure groove are provided around the adsorption hole on the upper surface of the rubber layer; the diameter of the adsorption hole is 1 to 3 mm, and is used to pass vacuum;

[0060] The width of the cutting groove is between 0.05 and 0.5 mm, and the depth is between 0.5 and 2 mm, and is used to accommodate the dicing knife;

[0061] The width of the first microstructure groove and the second microstructure groove are both between 0.005 and 0.1 mm, and the depth is between 0.1 mm and 0.5 mm, and the first microstructure groove and the second microstructure groove are both irradiated with ultraviolet light to increase hydrophilicity for absorbing moisture absorbed during the cutting process, thereby playing a sealing role;

[0062] The spacing between the first microstructure groove and the second microstructure groove is 0.01-0.3 mm; the spacing between the first microstructure groove and the adsorption hole is between 0.01-0.3 mm; the spacing between the second microstructure groove and the cutting groove is between 0.01-0.3 mm.

[0063] The number of microstructure grooves around each adsorption hole 1404 is 2. Since the rubber layer 14 at a position closer to the adsorption hole 1404 will bear a greater force, which will cause the rubber layer 14 to deform to a certain extent, the diameter of the adsorption hole 1404 is 1.5mm, which is used to pass through the vacuum; the depth of the microstructure groove ranges from 0.005 to 0.1mm, and the preferred depths are 0.03mm and 0.05mm, respectively. Among them, the microstructure groove with a depth of 0.03mm is a microstructure groove closer to the adsorption hole 1404, and the shape is square. The spacing between the microstructure groove and the cutting groove 1403 is equal, and preferably 0.2mm. The inner wall and the surrounding of the microstructure groove are treated for hydrophilicity by ultraviolet light irradiation.

[0064] The water that flows into the vacuum suction cup without air will directly flow into the water tank 17 through the pipe, wherein the pipe is characterized in that the end of the pipe is a guide surface and is closely attached to the wall of the water tank 17. A one-way valve 16 is provided in the pipe to prevent the water in the water tank 17 from being sucked back into the vacuum suction cup.

[0065] The air flowing into the vacuum suction cup along with the water will pass through the substrate 15. The substrate 15 is characterized in that it is composed of two parts, namely an upper substrate 1501 and a lower substrate 1502. The upper surface of the upper substrate 1501 has a radial V-shaped groove 1504 structure, which is located around the four upper substrate through holes 1505. The upper edge of the radial V-shaped groove 1504 can disperse the gas rushing toward the upper surface of the substrate 15. The dispersed gas rushes toward the surface of the radial V-shaped groove 1504 and flows along the The radial groove flows into the adsorption hole, thereby changing the direction of the gas to prevent the gas from blowing back to the surface of the semiconductor workpiece after collision, and the upper substrate 1501 does not directly contact the rubber layer 14. The lower substrate 1502 has a hollow structure inside, which can isolate and store the fluid sucked back into the substrate 15. A lower substrate through hole 1503 is opened at the lower part of the lower substrate 1502, and the through hole is connected to the circuit. Since the substrate 15 is in contact with air and water for a long time, the material of the substrate 15 is selected to be stainless steel.

[0066] The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. An adsorption device for semiconductor film-free scribing, comprising a vacuum chuck, characterized in that: The vacuum suction cup comprises a rubber layer (14) and a base body (15), the semiconductor workpiece (13) is placed on the upper surface of the rubber layer (14), and the rubber layer (14) is embedded in the base body (15), and the upper surface of the rubber layer (14) has a groove; The groove is divided into a first microstructure groove (1401) and a second microstructure groove (1402). The lower end of the base (15) has two branches, which are respectively connected to the water tank (17) and the diaphragm (1203) check valve (12). The pipeline section between the water tank (17) and the base (15) is provided with a one-way valve (16). The diaphragm check valve (12) is connected in sequence to a water vapor separator (11), a vacuum gauge (10), a second dryer (9), a second filter (8), a vacuum generator (7), an electromagnetic valve (6), a pressure reducing valve (5), an oil mist separator (4), a first filter (3), and a first dryer (2); and the diaphragm check valve (12), the water vapor separator (11), the vacuum gauge (10), the second dryer (9), the second filter (8), the vacuum generator (7), the electromagnetic valve (6), the pressure reducing valve (5), the oil mist separator (4), the first filter (3), and the first dryer (2) form a vacuum circuit. The vacuum gauge (10) is connected to the vacuum circuit to measure the vacuum degree in the vacuum circuit. The vacuum generator (7) and the compressed air (1) introduced into the vacuum circuit work together to generate a vacuum inside the vacuum suction cup. The solenoid valve (6) is electrically connected to the vacuum generator (7), the second dryer (9), the second filter (8), the oil-water separator (11), the first filter (3) and the first dryer (2) to ensure the purity of the gas in the vacuum circuit; A cutting groove (1403), a first microstructure groove (1401) and a second microstructure groove (1402) are provided around the adsorption hole (1404) on the upper surface of the rubber layer (14); The diameter of the adsorption hole (1404) is 1-3 mm, and is used for passing vacuum; The width of the cutting groove is between 0.05 and 0.5 mm, and the depth is between 0.5 and 2 mm, which is used to accommodate the dicing knife; The width of the first microstructure groove (1401) and the second microstructure groove (1402) are both between 0.005 and 0.1 mm, and the depth is between 0.1 mm and 0.5 mm, and the first microstructure groove (1401) and the second microstructure groove (1402) are both irradiated with ultraviolet light to increase hydrophilicity for absorbing moisture absorbed during the cutting process, thereby playing a sealing role; The spacing between the first microstructure groove (1401) and the second microstructure groove (1402) is 0.01-0.3 mm; the spacing between the first microstructure groove (1401) and the adsorption hole (1404) is between 0.01-0.3 mm; and the spacing between the second microstructure groove (1402) and the cutting groove (1403) is between 0.01-0.3 mm.

2. The adsorption device for semiconductor film-free dicing according to claim 1, characterized in that: The base (15) comprises two parts: an upper base (1501) and a lower base (1502); The upper substrate (1501) is provided with a plurality of ventilation holes (1505), the upper surface of the upper substrate (1501) is processed with a plurality of radial V-shaped grooves (1504) around each ventilation hole, and a gap is provided between the surface of the upper substrate and the lower surface of the rubber layer (14); The interior of the lower substrate (1502) has a hollow structure, and the through hole of the upper substrate (1501) is connected to the hollow structure, so that the fluid sucked back from the circuit into the substrate (15) is isolated and stored, and a through hole of the lower substrate (1502) is provided at the lower part of the lower substrate (1502) for connecting the substrate (15) and the circuit.

3. The adsorption device for semiconductor film-free dicing according to claim 1 is characterized in that: The diaphragm (1203) check valve (12) comprises: a fastener (1201), a diaphragm lining (1202), a diaphragm (1203), a valve body lining (1204), a valve body (1205), a gas outlet (1206), and a valve cover (1207); The inner wall of the diaphragm (1203) check valve (12) is provided with a valve body (1205) lining (1204); the valve cover (1207) is covered on the opening of the valve body (1205) by means of a fastener (1201); the diaphragm (1203) is provided at the opening; the lower surface of the valve cover (1207) has the valve body (1205) lining (1204) and the diaphragm (1203) lining (1202) in sequence; when the diaphragm (1203) and the diaphragm lining (1202) are attached to each other, fluid can pass through the diaphragm (1203) check valve (12) and flow into the vacuum circuit; when the vacuum circuit stops working, the diaphragm (1203) returns to the upper part of the valve body (1205), and the vacuum circuit is no longer circulated; the diaphragm (1203) lining (1202) is made of elastic material; The gas outlet (1206) is provided on the left side wall of the valve body (1205).

4. The adsorption device for semiconductor film-free dicing according to claim 1, characterized in that: A partition is provided between the inlet and outlet of the water-gas separator; The water-gas separator (11) comprises a first flow guide (1101) and a second flow guide (1102); the first flow guide (1101) is arranged at the inlet of the fluid in the water-gas separator (11); the second flow guide (1102) is arranged at the outlet of the water-gas separation gas; The second flow guide member (1102) is a pipe structure, and the inner surface of the second flow guide member (1102) is provided with staircase-shaped flow guide teeth; The outer surface (1103) of the second flow guide (1102) is a super hydrophobic surface; A water outlet (1104) is provided at the bottom of the water-gas separator (11).

5. An adsorption method, used for the anti-interference high-stability adsorption device for semiconductor film-free scribing according to any one of claims 1 to 4, characterized in that: The steps include: S10: purifying the compressed gas delivered into the vacuum circuit using the first dryer (2), the first filter (3), and the oil mist filter (4); S20: Before the compressed gas passes through the vacuum generator (7), the pressure is reduced by the pressure reducing valve (5) to ensure that the output pressure is stable after the gas passes through; S30: the solenoid valve (6) is switched to an open state, and after the compressed gas enters the vacuum generator (7), the gas below the vacuum suction cup is drawn into the vacuum generator (7), generating a vacuum negative pressure in the substrate (15), thereby completing the suction cup's adsorption of the semiconductor; S40: In the process of gas flowing toward the vacuum generator (7), the gas passes through the water-gas separator. When the mixed fluid carrying water vapor flows into the water-gas separator, it is initially filtered by the first flow guide (1101) on the right side of the water-gas separator. Then, the water vapor contacts the second flow guide (1102) due to inertia and adsorption force. S50: The second filter (8) and the second dryer (9) purify the gas flowing from the suction cup to the vacuum generator (7) to ensure the adsorption stability of the vacuum device. The vacuum gauge (10) connected to the second dryer (9) is used to measure the vacuum degree inside the device; S60: The left side of the vacuum gauge (10) is connected to the second dryer (9), and the right side is connected to the diaphragm (1203) check valve (12); the diaphragm (1203) check valve (12) is used to prevent the reverse flow of the fluid in the circuit.

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