A semiconductor light emitting device having a hot-cold state proportional control layer

Abstract

The application provides a semiconductor light-emitting element with a hot-cold proportion control layer, comprising, from bottom to top, a substrate, an n-type semiconductor, an active layer and a p-type semiconductor, wherein the n-type semiconductor is provided with the hot-cold proportion control layer between the n-type semiconductor and the active layer, and the hot-cold proportion control layer has a peak rate electric field change trend and a heavy hole effective mass change trend. The application can improve the interface band step of the quantum well and the p-type semiconductor under a hot state, enhance the confinement effect of the electron and hole of the quantum well, reduce the electron overflow to the p-type semiconductor under the hot state, reduce the hole barrier of the interface of the quantum well and the p-type semiconductor under the hot state, improve the hole injection efficiency, and solve the problem of insufficient hole injection under the hot state.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor optoelectronic devices, in particular to a semiconductor light-emitting element with a hot-cold state proportion control layer. BACKGROUND

[0002] Semiconductor elements, especially semiconductor light-emitting elements, have a wide range of adjustable wavelengths, high light-emitting efficiency, energy saving and environmental protection, long service life of more than 100,000 hours, small size, multiple application scenarios, strong designability, and other factors. They have gradually replaced incandescent lamps and fluorescent lamps, becoming the light source for ordinary home lighting, and are widely used in new scenarios such as indoor high-resolution display screens, outdoor display screens, Mini-LED, Micro-LED, mobile phone and television backlights, backlight illumination, street lamps, car headlights, car daytime running lights, car interior atmosphere lights, flashlights, etc.

[0003] Traditional nitride semiconductors are grown using sapphire substrates, which have large lattice and thermal mismatches, resulting in high defect density and polarization effects, reducing the light-emitting efficiency of semiconductor light-emitting elements. At the same time, the hole ionization efficiency of traditional nitride semiconductors is much lower than the electron ionization efficiency, resulting in a hole concentration more than one order of magnitude lower than the electron concentration. Excess electrons will overflow from the multi-quantum well to the second conductive type semiconductor to produce non-radiative recombination. Low hole ionization efficiency makes it difficult for holes to be effectively injected into the multi-quantum well, resulting in low efficiency of hole injection into the multi-quantum well, which reduces the light-emitting efficiency of the multi-quantum well. The nitride semiconductor structure has non-central symmetry, which produces strong spontaneous polarization along the c-axis direction. The piezoelectric polarization effect of the lattice mismatch forms an intrinsic polarization field. This intrinsic polarization field along the (001) direction causes strong quantum confinement Stark effect in the multi-quantum well layer, causing energy band tilting and spatial separation of electron and hole wave functions, reducing the radiation recombination efficiency of electrons and holes. The refractive index, dielectric constant, and other parameters of the semiconductor light-emitting element are greater than those of air, resulting in a smaller total reflection angle when the light emitted by the quantum well exits, and a lower light extraction efficiency. SUMMARY

[0004] To solve one of the above technical problems, the present application provides a semiconductor light-emitting element with a hot-cold state proportion control layer.

[0005] The embodiment of the present application provides a semiconductor light-emitting element with a hot-cold state proportional control layer, which comprises a substrate, an n-type semiconductor, an active layer and a p-type semiconductor arranged from bottom to top, a hot-cold state proportional control layer is arranged between the n-type semiconductor and the active layer, the hot-cold state proportional control layer comprises a first sub-hot-cold state proportional control layer, a second sub-hot-cold state proportional control layer and a third sub-hot-cold state proportional control layer arranged from bottom to top, and the first sub-hot-cold state proportional control layer, the second sub-hot-cold state proportional control layer and the third sub-hot-cold state proportional control layer all have a peak rate electric field change trend and a heavy hole effective mass change trend.

[0006] Preferably, the first sub-hot-cold state proportional control layer has a peak position of the peak rate electric field, the peak position of the peak rate electric field of the first sub-hot-cold state proportional control layer falls in the n-type semiconductor direction at an angle of α, the peak position of the peak rate electric field of the first sub-hot-cold state proportional control layer falls in the active layer direction at an angle of β, the second sub-hot-cold state proportional control layer has a valley position of the peak rate electric field, the valley position of the peak rate electric field of the second sub-hot-cold state proportional control layer rises in the n-type semiconductor direction at an angle of γ, the third sub-hot-cold state proportional control layer has a valley position of the peak rate electric field, and the valley position of the peak rate electric field of the third sub-hot-cold state proportional control layer rises in the n-type semiconductor direction at an angle of θ, wherein 10°≤γ≤β≤α≤θ≤90°, and the angle is a tangent inclination angle along a curve.

[0007] Preferably, the first sub-hot-cold state proportional control layer has a peak position of the heavy hole effective mass, the peak position of the heavy hole effective mass of the first sub-hot-cold state proportional control layer falls in the n-type semiconductor direction at an angle of δ, the peak position of the heavy hole effective mass of the first sub-hot-cold state proportional control layer falls in the active layer direction at an angle of σ, the second sub-hot-cold state proportional control layer has a valley position of the heavy hole effective mass, the valley position of the heavy hole effective mass of the second sub-hot-cold state proportional control layer rises in the n-type semiconductor direction at an angle of the third sub-hot-cold state proportional control layer has a valley position of the heavy hole effective mass, and the valley position of the heavy hole effective mass of the third sub-hot-cold state proportional control layer rises in the n-type semiconductor direction at an angle of ψ.

[0008] Preferably, the first sub-hot-cold state proportional control layer, the second sub-hot-cold state proportional control layer and the third sub-hot-cold state proportional control layer all have a transverse sound speed change trend, the first sub-hot-cold state proportional control layer has a peak position of the transverse sound speed, the peak position of the transverse sound speed of the first sub-hot-cold state proportional control layer falls in the n-type semiconductor direction at an angle of μ, the peak position of the transverse sound speed of the first sub-hot-cold state proportional control layer falls in the active layer direction at an angle of υ, the second sub-hot-cold state proportional control layer has a valley position of the transverse sound speed, the valley position of the transverse sound speed of the second sub-hot-cold state proportional control layer rises in the n-type semiconductor direction at an angle of ρ, the third sub-hot-cold state proportional control layer has a valley position of the transverse sound speed, and the valley position of the transverse sound speed of the third sub-hot-cold state proportional control layer rises in the n-type semiconductor direction at an angle of ω, wherein 3°≤ρ≤υ≤μ≤ω≤90°.

[0009] Preferably, the first, second and third sub-thermal cold proportionality regulating layers also have a change trend of saturation electron drift velocity, the first sub-thermal cold proportionality regulating layer has a rising angle of the valley position of the saturation electron drift velocity to the n-type semiconductor direction of ε, the first sub-thermal cold proportionality regulating layer has a rising angle of the valley position of the saturation electron drift velocity to the active layer direction of η, the second sub-thermal cold proportionality regulating layer has a falling angle of the peak position of the saturation electron drift velocity to the n-type semiconductor direction of κ, and the third sub-thermal cold proportionality regulating layer has a falling angle of the peak position of the saturation electron drift velocity to the n-type semiconductor direction of ζ, wherein: 5°≤κ≤η≤ε≤ζ≤90°.

[0010] Preferably, the first sub-thermal cold proportionality regulating layer has a falling angle of the peak position of the peak rate electric field, heavy hole effective mass and transverse sound velocity to the n-type semiconductor direction of μ, and the first sub-thermal cold proportionality regulating layer has a rising angle of the valley position of the saturation electron drift velocity to the n-type semiconductor direction of ε, and the following relationship is met: 3°≤μ≤ε≤90°.

[0011] Preferably, the first sub-thermal cold proportionality regulating layer has a falling angle of the peak position of the peak rate electric field, heavy hole effective mass and transverse sound velocity to the active layer direction of υ, and the first sub-thermal cold proportionality regulating layer has a rising angle of the valley position of the saturation electron drift velocity to the active layer direction of η, and the following relationship is met: 3°≤υ≤η≤90°.

[0012] Preferably, the second sub-thermal cold proportionality regulating layer has a rising angle of the valley position of the peak rate electric field, heavy hole effective mass and transverse sound velocity to the n-type semiconductor direction of ω, and the second sub-thermal cold proportionality regulating layer has a falling angle of the peak position of the saturation electron drift velocity to the n-type semiconductor direction of ζ, and the following relationship is met: 3°≤ω≤ζ≤90°.

[0013] Preferably, the third sub-thermal cold proportionality regulating layer has a rising angle of the valley position of the peak rate electric field, heavy hole effective mass and transverse sound velocity to the n-type semiconductor direction of ψ, and the third sub-thermal cold proportionality regulating layer has a falling angle of the peak position of the saturation electron drift velocity to the n-type semiconductor direction of θ, and the following relationship is met: 3°≤ψ≤θ≤90°.

[0014] Preferably, the first sub-thermal cold-state proportionality regulation layer has the peak rate electric field, the heavy hole effective mass, the transverse sound speed, the peak position of the peak rate electric field, the heavy hole effective mass, and the transverse sound speed, the valley position of the heavy hole effective mass, the peak position of the saturated electron drift velocity, the valley position of the saturated electron drift velocity, the angle of the peak position of the peak rate electric field, the heavy hole effective mass, and the transverse sound speed to the n-type semiconductor direction, the angle of the valley position of the heavy hole effective mass to the n-type semiconductor direction, the angle of the peak position of the saturated electron drift velocity to the n-type semiconductor direction, the angle of the peak position of the peak rate electric field to the active layer direction, the angle of the valley position of the heavy hole effective mass to the active layer direction, and the angle of the peak position of the saturated electron drift velocity to the active layer direction have the following relationship:

[0015] Preferably, the peak rate electric field of the first sub-thermal cold-state proportionality regulation layer has a third quadrant curve distribution of a function y1=cscx1, x1 being the depth of the first sub-thermal cold-state proportionality regulation layer to the second sub-thermal cold-state proportionality regulation layer direction;

[0016] The heavy hole effective mass of the first sub-thermal cold-state proportionality regulation layer has a third quadrant curve distribution of a function y2=cscx1;

[0017] The transverse sound speed of the first sub-thermal cold-state proportionality regulation layer has a third quadrant curve distribution of a function y3=cscx1;

[0018] The saturated electron drift velocity of the first sub-thermal cold-state proportionality regulation layer has a first quadrant curve distribution of a function y4=cscx1.

[0019] Preferably, the peak rate electric field of the second sub-thermal cold-state proportionality regulation layer has a second quadrant curve distribution of a function y5=e x2 / x2 2 , x2 being the depth of the second sub-thermal cold-state proportionality regulation layer to the third sub-thermal cold-state proportionality regulation layer direction;

[0020] The heavy hole effective mass of the second sub-thermal cold-state proportionality regulation layer has a second quadrant curve distribution of a function y6=e x2 / x2 2 ;

[0021] The transverse sound speed of the second sub-thermal cold-state proportionality regulation layer has a second quadrant curve distribution of a function y7=ex2 / x2 2 second quadrant curve distribution;

[0022] The saturation electron drift velocity of the second sub-thermal state cold state proportional control layer has a function y8 = sin / x2 2 third quadrant curve distribution.

[0023] Preferably, the thermal state cold state proportional control layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN.

[0024] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and the thickness is 5 angstroms to 200 angstroms.

[0025] The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and the thickness is 10 angstroms to 400 angstroms.

[0026] Preferably, the n-type semiconductor, p-type semiconductor includes any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, the thickness of the n-type semiconductor is 5 angstroms to 60000 angstroms, and the thickness of the p-type semiconductor is 10 angstroms to 9000 angstroms.

[0027] Preferably, the substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0028] The beneficial effects of the present application are as follows: the present application is provided with a multilayer structure of a hot-state cold-state ratio control layer between the n-type semiconductor and the active layer of the semiconductor light emitting element, and has a peak rate electric field change trend and a heavy hole effective mass change trend in the multilayer hot-state cold-state ratio control layer structure, so as to control the interface angle of the peak rate electric field and the heavy hole effective mass, improve the interface band step of the quantum well and the p-type semiconductor under the hot state, enhance the confinement effect of the electron hole of the quantum well, reduce the electron overflow to the p-type semiconductor under the hot state, so as to make the hot-state cold-state efficiency ratio (the brightness ratio of 85 degrees / 25 degrees) and the aging light decay of the semiconductor light emitting element, the hot-state cold-state efficiency ratio is improved from 70-85% of the traditional semiconductor light emitting element to 85-98%, and the aging light decay under the condition of 85 degrees is reduced from 20-40% to 5-20% under 1000H. BRIEF DESCRIPTION OF DRAWINGS

[0029] The drawings described herein are used to provide further understanding of the present application, and form a part of the present application. The schematic embodiments of the present application and the description thereof are used to explain the present application, and do not constitute improper limitations on the present application. In the drawings:

[0030] Figure 1 The structure schematic diagram of the semiconductor light emitting element with the hot-state cold-state ratio control layer described in the embodiments of the present application.

[0031] Reference signs:

[0032] 100, substrate, 101, n-type semiconductor, 102, hot-cold state ratio control layer, 103, active layer, 104, p-type semiconductor

[0033] 102a, first sub hot-cold state ratio control layer, 102b, second sub hot-cold state ratio control layer, 102c, third sub hot-cold state ratio control layer. DETAILED DESCRIPTION

[0034] In order to make the technical solutions and advantages of the embodiments of the present application clearer, the exemplary embodiments of the present application are further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only some of the embodiments of the present application, not all the embodiments. It should be noted that the embodiments and features in the embodiments can be combined with each other without conflict.

[0035] As shown in the drawings, the present embodiment proposes a semiconductor light-emitting element with a hot-cold state ratio control layer, comprising a substrate 100, an n-type semiconductor 101, an active layer 103 and a p-type semiconductor 104 arranged in order from bottom to top, wherein a hot-cold state ratio control layer 102 is arranged between the n-type semiconductor 101 and the active layer 103. Figure 1

[0036] Specifically, in the present embodiment, the semiconductor light-emitting element with a hot-cold state ratio control layer is arranged in order from bottom to top with a substrate 100, an n-type semiconductor 101, an active layer 103 and a p-type semiconductor 104. The hot-cold state ratio control layer 102 is arranged between the n-type semiconductor 101 and the active layer 103. The hot-cold state ratio control layer 102 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN.

[0037] ​In this embodiment, the hot and cold state ratio regulation layer 102 is a multi-layer structure, including the first, second and third sub hot and cold state ratio regulation layers 102a, 102b and 102c arranged from bottom to top, and each of the first, second and third sub hot and cold state ratio regulation layers 102a, 102b and 102c has a peak rate electric field change trend, a heavy hole effective mass change trend, a transverse sound speed change trend and a saturated electron drift velocity change trend, which are specifically as follows:

[0038] Peak rate electric field change trend:

[0039] The peak position of the peak rate electric field of the first sub hot and cold state ratio regulation layer 102a presents a downward trend towards the n-type semiconductor 101;

[0040] The peak position of the peak rate electric field of the first sub hot and cold state ratio regulation layer 102a presents a downward trend towards the active layer 103;

[0041] The valley position of the peak rate electric field of the second sub hot and cold state ratio regulation layer 102b presents an upward trend towards the n-type semiconductor 101;

[0042] The valley position of the peak rate electric field of the third sub hot and cold state ratio regulation layer 102c presents an upward trend towards the n-type semiconductor 101.

[0043] Specifically, the downward angle of the peak position of the peak rate electric field of the first sub hot and cold state ratio regulation layer 102a towards the n-type semiconductor 101 is α, the downward angle of the peak position of the peak rate electric field of the first sub hot and cold state ratio regulation layer 102a towards the active layer 103 is β, the upward angle of the valley position of the peak rate electric field of the second sub hot and cold state ratio regulation layer 102b towards the n-type semiconductor 101 is γ, and the upward angle of the valley position of the peak rate electric field of the third sub hot and cold state ratio regulation layer 102c towards the n-type semiconductor 101 is θ, wherein: 10°≤γ≤β≤α≤θ≤90°, and the angle is the inclination angle along the tangent line of the curve.

[0044] Heavy hole effective mass change trend:

[0045] The peak position of the heavy hole effective mass of the first sub hot and cold state ratio regulation layer 102a presents a downward trend towards the n-type semiconductor 101;

[0046] The peak position of the heavy hole effective mass of the first sub hot and cold state ratio regulation layer 102a presents a downward trend towards the active layer 103;

[0047] The valley position of the heavy hole effective mass of the second sub-hot state cold state proportionality regulation layer 102b presents an upward trend towards the n-type semiconductor 101;

[0048] The valley position of the heavy hole effective mass of the third sub-hot state cold state proportionality regulation layer 102c presents an upward trend towards the n-type semiconductor 101.

[0049] Specifically, the downward angle of the peak position of the heavy hole effective mass of the first sub-hot state cold state proportionality regulation layer 102a towards the n-type semiconductor 101 is δ, the downward angle of the peak position of the heavy hole effective mass of the first sub-hot state cold state proportionality regulation layer 102a towards the active layer 103 is σ, the upward angle of the valley position of the heavy hole effective mass of the second sub-hot state cold state proportionality regulation layer 102b towards the n-type semiconductor 101 is The upward angle of the valley position of the heavy hole effective mass of the third sub-hot state cold state proportionality regulation layer 102c towards the n-type semiconductor 101 is ψ, wherein:

[0050] The transverse sound speed variation trend:

[0051] The peak position of the transverse sound speed of the first sub-hot state cold state proportionality regulation layer 102a presents a downward trend towards the n-type semiconductor 101;

[0052] The peak position of the transverse sound speed of the first sub-hot state cold state proportionality regulation layer 102a presents a downward trend towards the active layer 103;

[0053] The valley position of the transverse sound speed of the second sub-hot state cold state proportionality regulation layer 102b presents an upward trend towards the n-type semiconductor 101;

[0054] The valley position of the transverse sound speed of the third sub-hot state cold state proportionality regulation layer 102c presents an upward trend towards the n-type semiconductor 101.

[0055] Specifically, the downward angle of the peak position of the transverse sound speed of the first sub-hot state cold state proportionality regulation layer 102a towards the n-type semiconductor 101 is μ, the downward angle of the peak position of the transverse sound speed of the first sub-hot state cold state proportionality regulation layer 102a towards the active layer 103 is υ, the upward angle of the valley position of the transverse sound speed of the second sub-hot state cold state proportionality regulation layer 102b towards the n-type semiconductor 101 is ρ, and the upward angle of the valley position of the transverse sound speed of the third sub-hot state cold state proportionality regulation layer 102c towards the n-type semiconductor 101 is ω, wherein: 3°≤ρ≤υ≤μ≤ω≤90°.

[0056] The saturated electron drift velocity variation trend:

[0057] The valley position of the saturation electron drift velocity of the first sub-hot-cold proportionality regulation layer 102a presents an ascending trend towards the n-type semiconductor 101;

[0058] The valley position of the saturation electron drift velocity of the first sub-hot-cold proportionality regulation layer 102a presents an ascending trend towards the active layer 103;

[0059] The peak position of the saturation electron drift velocity of the second sub-hot-cold proportionality regulation layer 102b presents a descending trend towards the n-type semiconductor 101;

[0060] The peak position of the saturation electron drift velocity of the third sub-hot-cold proportionality regulation layer 102c presents a descending trend towards the n-type semiconductor 101.

[0061] Specifically, the ascending angle of the valley position of the saturation electron drift velocity of the first sub-hot-cold proportionality regulation layer 102a towards the n-type semiconductor 101 is ε, the ascending angle of the valley position of the saturation electron drift velocity of the first sub-hot-cold proportionality regulation layer 102a towards the active layer 103 is η, the descending angle of the peak position of the saturation electron drift velocity of the second sub-hot-cold proportionality regulation layer 102b towards the n-type semiconductor 101 is κ, and the descending angle of the peak position of the saturation electron drift velocity of the third sub-hot-cold proportionality regulation layer 102c towards the n-type semiconductor 101 is ζ, wherein: 5°≤κ≤η≤ε≤ζ≤90°.

[0062] More specifically, the descending angle of the peak position of the peak rate electric field, the heavy hole effective mass, and the transverse acoustic velocity of the first sub-hot-cold proportionality regulation layer 102a towards the n-type semiconductor 101 and the ascending angle of the valley position of the saturation electron drift velocity of the first sub-hot-cold proportionality regulation layer 102a towards the n-type semiconductor 101 have the following relationship: 3°≤μ≤ε≤δ≤α≤90°.

[0063] The descending angle of the peak position of the peak rate electric field, the heavy hole effective mass, and the transverse acoustic velocity of the first sub-hot-cold proportionality regulation layer 102a towards the active layer 103 and the ascending angle of the valley position of the saturation electron drift velocity of the first sub-hot-cold proportionality regulation layer 102a towards the active layer 103 have the following relationship: 3°≤υ≤η≤σ≤β≤90°.

[0064] The ascending angle of the valley position of the peak rate electric field, the heavy hole effective mass, and the transverse acoustic velocity of the second sub-hot-cold proportionality regulation layer 102b towards the n-type semiconductor 101 and the descending angle of the peak position of the saturation electron drift velocity of the second sub-hot-cold proportionality regulation layer 102b towards the n-type semiconductor 101 have the following relationship:

[0065] The third sub-thermal cold-state proportionality control layer 102c has the following relationship between the upward angle of the valley position of the peak rate electric field, heavy hole effective mass, and transverse sound speed to the n-type semiconductor 101 direction and the downward angle of the peak position of the saturated electron drift rate of the third sub-thermal cold-state proportionality control layer 102c to the n-type semiconductor 101 direction: 3°≤ω≤ζ≤ψ≤θ≤90°.

[0066] The first sub-thermal cold-state proportionality control layer 102a has the following relationship between the downward angle of the peak rate electric field, heavy hole effective mass, and transverse sound speed to the n-type semiconductor 101 direction and the upward angle of the valley position of the saturated electron drift rate of the first sub-thermal cold-state proportionality control layer 102a to the n-type semiconductor 101 direction, the downward angle of the peak rate electric field, heavy hole effective mass, and transverse sound speed to the active layer 103 direction and the upward angle of the valley position of the saturated electron drift rate of the first sub-thermal cold-state proportionality control layer 102a to the active layer 103 direction, the second sub-thermal cold-state proportionality control layer 102b has the following relationship between the upward angle of the valley position of the peak rate electric field, heavy hole effective mass, and transverse sound speed to the n-type semiconductor 101 direction and the downward angle of the peak position of the saturated electron drift rate of the second sub-thermal cold-state proportionality control layer 102b to the n-type semiconductor 101 direction, and the third sub-thermal cold-state proportionality control layer 102c has the following relationship between the upward angle of the valley position of the peak rate electric field, heavy hole effective mass, and transverse sound speed to the n-type semiconductor 101 direction and the downward angle of the peak position of the saturated electron drift rate of the third sub-thermal cold-state proportionality control layer 102c to the n-type semiconductor 101 direction:

[0067] The embodiment is provided with a multi-layer thermal cold-state proportionality control layer 102 between the n-type semiconductor 101 and the active layer 103 of the semiconductor light emitting element, and the multi-layer thermal cold-state proportionality control layer 102 has a peak rate electric field change trend, a heavy hole effective mass change trend, a transverse sound speed change trend, and a saturated electron drift rate change trend, thereby controlling the interface angle of the peak rate electric field and the heavy hole effective mass, improving the interface band step of the quantum well and the p-type semiconductor 104 in the thermal state, enhancing the confinement effect of the electron and hole of the quantum well, reducing the electron overflow to the p-type semiconductor 104 in the thermal state, meanwhile, controlling the interface angle of the transverse sound speed and the saturated electron drift rate, reducing the hole barrier of the quantum well and the p-type semiconductor 104 interface in the thermal state, improving the hole injection efficiency, and solving the problem of insufficient hole injection in the thermal state, so that the thermal cold-state efficiency ratio (85 degrees / 25 degrees brightness ratio) and the aging light decay of the semiconductor light emitting element are improved, the thermal cold-state efficiency ratio is improved from 70-85% of the traditional semiconductor light emitting element to 85-98%, and the aging light decay under 85-degree condition is reduced from 20-40% to 5-20%.

[0068] In some alternative embodiments, the first sub-thermal cold-state proportionally regulated layer 102a also has specific peak rate electric field, heavy hole effective mass, transverse sound speed, and saturated electron drift velocity distribution characteristics, which are specifically manifested as:

[0069] The peak rate electric field of the first sub-thermal cold-state proportionally regulated layer 102a has a function y1 = cscx1 third quadrant curve distribution;

[0070] The heavy hole effective mass of the first sub-thermal cold-state proportionally regulated layer 102a has a function y2 = cscx1 third quadrant curve distribution;

[0071] The transverse sound speed of the first sub-thermal cold-state proportionally regulated layer 102a has a function y3 = cscx1 third quadrant curve distribution;

[0072] The saturated electron drift velocity of the first sub-thermal cold-state proportionally regulated layer 102a has a function y4 = cscx1 first quadrant curve distribution;

[0073] Wherein, x1 is the depth of the first sub-thermal cold-state proportionally regulated layer 102a in the direction of the second sub-thermal cold-state proportionally regulated layer 102b.

[0074] In some alternative embodiments, the second sub-thermal cold-state proportionally regulated layer 102b also has specific peak rate electric field, heavy hole effective mass, transverse sound speed, and saturated electron drift velocity distribution characteristics, which are specifically manifested as:

[0075] The peak rate electric field of the second sub-thermal cold-state proportionally regulated layer 102b has a function y5 = e x2 / x2 2 Second quadrant curve distribution;

[0076] The heavy hole effective mass of the second sub-thermal cold-state proportionally regulated layer 102b has a function y6 = e x2 / x2 2 Second quadrant curve distribution;

[0077] The transverse sound speed of the second sub-thermal cold-state proportionally regulated layer 102b has a function y7 = e x2 / x2 2 Second quadrant curve distribution;

[0078] The saturated electron drift velocity of the second sub-thermal cold-state proportionally regulated layer 102b has a function y8 = sin / x2 2 Third quadrant curve distribution;

[0079] Wherein, x2 is the depth of the second sub-thermal cold-state proportionally regulated layer 102b in the direction of the third sub-thermal cold-state proportionally regulated layer 102c.

[0080] The embodiment can further improve the interface band step of the quantum well and the p-type semiconductor 104 under the hot state, enhance the confinement effect of the electron and hole of the quantum well, reduce the electron overflow to the p-type semiconductor 104 under the hot state, reduce the hole barrier of the interface between the quantum well and the p-type semiconductor 104 under the hot state, improve the hole injection efficiency, and solve the problem of insufficient hole injection under the hot state.

[0081] In some optional embodiments, the active layer 103 is a periodic structure composed of well layers and barrier layers, the number of periods is 3≥m≥1, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the thickness is 5 angstroms to 200 angstroms.

[0082] The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the thickness is 10 angstroms to 400 angstroms.

[0083] In some alternative embodiments, the n-type semiconductor 101, the p-type semiconductor 104 comprises any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, the thickness of the n-type semiconductor 101 is 5 angstroms to 60000 angstroms, and the thickness of the p-type semiconductor 104 is 10 angstroms to 9000 angstroms.

[0084] In some alternative embodiments, the substrate 100 comprises any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0085] Obviously, various modifications and changes can be made to the present application by those skilled in the art without departing from the spirit and scope of the present application. Thus, it is intended that the present application cover the modifications and changes as they come within the scope of the claims and their equivalents.

Claims

1. A semiconductor light emitting device having a hot-cold state ratio control layer, comprising, from bottom to top, a substrate, an n-type semiconductor, an active layer, and a p-type semiconductor, characterized in that, The n-type semiconductor and the active layer are provided with a hot-cold state ratio control layer, the hot-cold state ratio control layer comprises, from bottom to top, a first sub-hot-cold state ratio control layer, a second sub-hot-cold state ratio control layer and a third sub-hot-cold state ratio control layer, and the first sub-hot-cold state ratio control layer, the second sub-hot-cold state ratio control layer and the third sub-hot-cold state ratio control layer all have a peak rate electric field change trend and a heavy hole effective mass change trend; The first sub-hot-cold state ratio control layer has a peak position of the peak rate electric field, and the peak position of the peak rate electric field falls towards the n-type semiconductor at an angle of α, the peak position of the peak rate electric field falls towards the active layer at an angle of β, the second sub-hot-cold state ratio control layer has a valley position of the peak rate electric field, and the valley position of the peak rate electric field rises towards the n-type semiconductor at an angle of γ, the third sub-hot-cold state ratio control layer has a valley position of the peak rate electric field, and the valley position of the peak rate electric field rises towards the n-type semiconductor at an angle of θ, wherein: 10°≤γ≤β≤α≤θ≤90°, the angle is a tangent inclination angle along a curve; The angle of decline of the peak position of the heavy hole effective mass of the first sub-thermal and cold state proportionality regulation layer to the n-type semiconductor direction is δ, the angle of decline of the peak position of the heavy hole effective mass of the first sub-thermal and cold state proportionality regulation layer to the active layer direction is σ, the angle of rise of the valley position of the heavy hole effective mass of the second sub-thermal and cold state proportionality regulation layer to the n-type semiconductor direction is The angle of rise of the valley position of the heavy hole effective mass of the third sub-thermal and cold state proportionality regulation layer to the n-type semiconductor direction is ψ, wherein:

2. The semiconductor light emitting device having a hot-cold state ratio control layer according to claim 1, wherein, The first sub-hot-cold state ratio control layer, the second sub-hot-cold state ratio control layer and the third sub-hot-cold state ratio control layer also have a transverse sound speed change trend, the first sub-hot-cold state ratio control layer has a peak position of the transverse sound speed, and the peak position of the transverse sound speed falls towards the n-type semiconductor at an angle of μ, the peak position of the transverse sound speed falls towards the active layer at an angle of υ, the second sub-hot-cold state ratio control layer has a valley position of the transverse sound speed, and the valley position of the transverse sound speed rises towards the n-type semiconductor at an angle of ρ, the third sub-hot-cold state ratio control layer has a valley position of the transverse sound speed, and the valley position of the transverse sound speed rises towards the n-type semiconductor at an angle of ω, wherein: 3°≤ρ≤υ≤μ≤ω≤90°.

3. The semiconductor light emitting device having a hot-cold state ratio control layer according to claim 2, wherein, The first sub-hot-cold state ratio control layer, the second sub-hot-cold state ratio control layer and the third sub-hot-cold state ratio control layer also have a saturated electron drift rate change trend, the first sub-hot-cold state ratio control layer has a valley position of the saturated electron drift rate, and the valley position of the saturated electron drift rate rises towards the n-type semiconductor at an angle of ε, the valley position of the saturated electron drift rate rises towards the active layer at an angle of η, the second sub-hot-cold state ratio control layer has a peak position of the saturated electron drift rate, and the peak position of the saturated electron drift rate falls towards the n-type semiconductor at an angle of κ, the third sub-hot-cold state ratio control layer has a peak position of the saturated electron drift rate, and the peak position of the saturated electron drift rate falls towards the n-type semiconductor at an angle of ζ, wherein: 5°≤κ≤η≤ε≤ζ≤90°.

4. The semiconductor light emitting device having a hot-cold state ratio control layer according to claim 3, wherein, The first sub-hot-cold state ratio control layer has a peak position of the peak rate electric field, a heavy hole effective mass, a transverse sound speed, and a valley position of the saturated electron drift rate, and the peak position of the peak rate electric field falls towards the n-type semiconductor at an angle of δ, and the valley position of the saturated electron drift rate rises towards the n-type semiconductor at an angle of ε, and the following relationship is met: 3°≤μ≤ε≤δ≤α≤90°. The peak rate electric field, the heavy hole effective mass, the transverse sound speed of the first sub-thermal and cold state proportion control layer, the descending angle of the peak position to the active layer direction, and the ascending angle of the valley position of the saturated electron drift rate of the first sub-thermal and cold state proportion control layer to the active layer direction have the following relationship: 3°≤υ≤η≤σ≤β≤90°. The rising angle of the peak value rate electric field, the heavy hole effective mass, the valley value position of the transverse sound speed of the second sub-hot-state cold-state proportional regulation layer to the n-type semiconductor direction and the falling angle of the peak value position of the saturated electron drift rate of the second sub-hot-state cold-state proportional regulation layer to the n-type semiconductor direction have the following relationship: The valley position of the peak rate electric field, the heavy hole effective mass, the transverse sound speed of the third sub-thermal and cold state proportion control layer to the n-type semiconductor direction, and the descending angle of the peak position of the saturated electron drift rate of the third sub-thermal and cold state proportion control layer to the n-type semiconductor direction have the following relationship: 3°≤ω≤ζ≤ψ≤θ≤90°.

5. The semiconductor light emitting device having a hot-cold state ratio control layer according to claim 3 or 4, wherein the angle of descent of the peak position of the peak rate electric field, the heavy hole effective mass, and the transverse sound velocity of the first sub-hot-cold-state proportionally regulated layer to the n-type semiconductor direction and the angle of ascent of the valley position of the saturated electron drift velocity of the first sub-hot-cold-state proportionally regulated layer to the n-type semiconductor direction, the angle of descent of the peak position of the peak rate electric field, the heavy hole effective mass, and the transverse sound velocity of the first sub-hot-cold-state proportionally regulated layer to the active layer direction and the angle of ascent of the valley position of the saturated electron drift velocity of the first sub-hot-cold-state proportionally regulated layer to the active layer direction, the angle of ascent of the valley position of the peak rate electric field, the heavy hole effective mass, and the transverse sound velocity of the second sub-hot-cold-state proportionally regulated layer to the n-type semiconductor direction and the angle of descent of the peak position of the saturated electron drift velocity of the second sub-hot-cold-state proportionally regulated layer to the n-type semiconductor direction, and the angle of ascent of the valley position of the peak rate electric field, the heavy hole effective mass, and the transverse sound velocity of the third sub-hot-cold-state proportionally regulated layer to the n-type semiconductor direction and the angle of descent of the peak position of the saturated electron drift velocity of the third sub-hot-cold-state proportionally regulated layer to the n-type semiconductor direction have the following relationships:

6. The semiconductor light emitting device having a hot-cold state ratio control layer according to claim 1, wherein, The thermal and cold state proportion control layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN.

7. The semiconductor light emitting device having a hot-cold state ratio control layer according to claim 1, wherein the first and second semiconductor layers are formed of a material having a band gap of 1.9 eV or more. The active layer is a periodic structure composed of a well layer and a barrier layer, the period number is 3≥m≥1, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and the thickness is 5 angstrom meters to 200 angstrom meters; The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and the thickness is 10 angstrom meters to 400 angstrom meters.

8. The semiconductor light emitting device having a hot-cold state ratio control layer according to claim 1, wherein, The n-type semiconductor, p-type semiconductor includes any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, the thickness of the n-type semiconductor is 5 angstroms to 60000 angstroms, the thickness of the p-type semiconductor is 10 angstroms to 9000 angstroms.

9. The semiconductor light emitting device having a hot-cold state ratio control layer according to claim 1, wherein, The substrate comprises sapphire, silicon, Ge, SiC, AIN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AIN composite substrate, sapphire / SiN x Any one of sapphire, silicon, Ge, SiC, AIN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AIN composite substrate, sapphire / SiN

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