Storage device repair method and storage device repair system

Abstract

The present application provides a storage device repair method and storage device repair system. The repair method includes traversing first signal lines of a storage array to obtain the number of failed storage cells on each first signal line, wherein multiple first signal lines are sequentially spaced in a second direction and each first signal line extends along the first direction; based on a first repair strategy, replacing first signal lines that comply with the first repair strategy with first redundant signal lines, wherein the number of failed storage cells on the first signal lines that comply with the first repair strategy is greater than the number of valid second redundant signal lines; the first redundant signal line extends along the first direction, and multiple first redundant signal lines are sequentially spaced in the second direction; and the second redundant signal line extends along the second direction, and multiple second redundant signal lines are sequentially spaced in the first direction. The repair method of the present application can improve the repair rate of failed storage cells in a storage device.

Description

Technical Field

[0001] The present application relates to the field of storage technology, and in particular to a method for repairing a storage device and a system for repairing a storage device. Background Art

[0002] Dynamic Random Access Memory (DRAM) chips, as storage devices, are now widely used in mobile phones, computers, servers, and other devices due to their simple structure, high integration, and low power consumption. They play an important role in the consumer electronics field. During the DRAM chip manufacturing process, failed memory cells may appear in the DRAM chip's memory array. To cope with this situation, a portion of redundant storage area is reserved during DRAM chip design, such as a redundant memory array including multiple redundant memory cells, which are used to replace failed memory cells in the memory array to ensure the normal use of the DRAM chip. Currently, most DRAM chips have a limited number of redundant memory cells due to area constraints. Therefore, it is very important to use the limited redundant memory cells to repair as many failed memory cells as possible and improve the repair rate of failed memory cells. Summary of the Invention

[0003] In order to solve the above problems, the present application provides a storage device repair method and a storage device repair system, which can improve the repair rate of failed storage units in the storage device and / or improve the pass rate of mass production of storage devices.

[0004] A technical solution adopted in the present application is: providing a repair method for a storage device, wherein the storage device includes a storage array and a redundant storage array, wherein redundant storage cells in the redundant storage array are used to repair and replace failed storage cells in the storage array, and the repair method includes traversing first signal lines of the storage array to obtain the number of failed storage cells on each first signal line, wherein multiple first signal lines are sequentially spaced in a second direction and each first signal line extends along the first direction; based on a first repair strategy, using the first redundant signal line to replace the first signal line that complies with the first repair strategy, wherein the number of failed storage cells on the first signal line that complies with the first repair strategy is greater than the number of valid second redundant signal lines; the first redundant signal line extends along the first direction, and the multiple first redundant signal lines are sequentially spaced in the second direction; the second redundant signal line extends along the second direction, and the multiple second redundant signal lines are sequentially spaced in the first direction.

[0005] Wherein, based on the first repair strategy, replacing the first signal line that complies with the first repair strategy with the first redundant signal line includes: performing a first sorting on the traversed first signal lines based on the number of failed storage cells; determining whether the number of failed storage cells on the current first signal line is greater than the number of valid second redundant signal lines based on the order of the first sorting; and replacing the current first signal line with the first redundant signal line in response to the number of failed storage cells on the current first signal line being greater than the number of valid second redundant signal lines.

[0006] The first sorting order is the order from most to least according to the number of failed storage units.

[0007] The replacing the current first signal line with the first redundant signal line includes: determining the number of failed redundant memory cells on each first redundant signal line, and performing a second sorting on the first redundant signal lines based on the number of failed redundant memory cells; determining, based on the order of the second sorting, whether the number of failed redundant memory cells on the current first redundant signal line is less than the number of valid second redundant signal lines; and replacing the current first signal line with the current first redundant signal line in response to the number of failed redundant memory cells on the current first redundant signal line being less than the number of valid second redundant signal lines.

[0008] The second sorting order is based on the number of failed redundant memory cells from small to large.

[0009] The method includes marking the current first redundant signal line after replacement as used, and determining whether the current first redundant signal line is the last first redundant signal line; in response to the current first redundant signal line not being the last first redundant signal line, determining whether the current first signal line is the last first signal line in the storage array; and in response to the current first signal line not being the last first signal line in the storage array, returning to the step of continuing to execute the order based on the first sorting to determine whether the number of failed storage cells on the current first signal line is greater than the number of valid second redundant signal lines, wherein the next first signal line based on the first sorting order is updated as the current first signal line, and the next first redundant signal line based on the second sorting order is updated as the current first redundant signal line.

[0010] In which, in response to the current first redundant signal line being the last first redundant signal line, the step of replacing the first signal line that complies with the first repair strategy with the first redundant signal line based on the first repair strategy is terminated; and / or in response to the current first signal line being the last first signal line in the storage array, the step of replacing the first signal line that complies with the first repair strategy with the first redundant signal line based on the first repair strategy is terminated; and / or in response to the number of failed storage cells on the current first signal line being not less than the number of valid second redundant signal lines, the step of replacing the first signal line that complies with the first repair strategy with the first redundant signal line based on the first repair strategy is terminated.

[0011] Based on the first repair strategy, the second signal line complying with the first repair strategy is replaced with a valid second redundant signal line, wherein the number of failed storage cells on the second signal line complying with the first repair strategy is greater than the number of valid first redundant signal lines.

[0012] The first signal line is a column signal line, the second signal line is a row signal line, the first redundant signal line is a redundant column signal line, and the second redundant signal line is a redundant row signal line.

[0013] The first signal lines of the storage array repaired and replaced by the first repair strategy are traversed to obtain failed storage cells on each first signal line; based on the second repair strategy, the first signal lines that comply with the second repair strategy are replaced with valid first redundant signal lines.

[0014] Wherein, based on the second repair strategy, replacing the first signal line that complies with the second repair strategy with the valid first redundant signal line includes: performing a first sorting on the traversed first signal lines based on the number of failed memory cells; determining whether the number of failed memory cells on the current first signal line is zero based on the order of the first sorting; in response to the number of failed memory cells on the current first signal line being non-zero, determining the number of failed redundant memory cells on each valid first redundant signal line, and performing a second sorting on the valid first redundant signal lines based on the number of failed redundant memory cells; determining whether the number of failed redundant memory cells on the valid current first redundant signal line is less than the number of failed memory cells on the current first signal line based on the order of the second sorting; and replacing the current first signal line with the valid current first redundant signal line in response to the number of failed redundant memory cells on the valid current first redundant signal line being less than the number of failed memory cells on the current first signal line.

[0015] Among them, it is determined whether the valid current first redundant signal line is the last first redundant signal line; in response to the valid current first redundant signal line not being the last first redundant signal line, returning to continue executing the order based on the first sorting to determine whether the number of failed storage units on the current first signal line is zero, wherein the next first signal line based on the first sorting order is updated as the current first signal line, and the next valid first redundant signal line based on the second sorting order is updated as the valid current first redundant signal line.

[0016] In which, in response to the number of failed memory cells on the current first signal line being zero, the step of replacing the first signal line that complies with the second repair strategy with the valid first redundant signal line based on the second repair strategy is terminated; and / or in response to the number of failed redundant memory cells on the valid current first redundant signal line being greater than the number of failed memory cells on the current first signal line, the step of replacing the first signal line that complies with the second repair strategy with the valid first redundant signal line based on the second repair strategy is terminated; and / or in response to the current first redundant signal line being the last first redundant signal line, the step of replacing the first signal line that complies with the second repair strategy with the valid first redundant signal line based on the second repair strategy is terminated.

[0017] Based on the second repair strategy, the second signal line that complies with the second repair strategy is replaced with the valid second redundant signal line.

[0018] Another technical solution adopted in the present application is: providing a repair system for a storage device, the repair system including a main control device and a storage device, the main control device executing the above-mentioned repair method to generate repair replacement information; the storage device is coupled to the main control device, and the storage device includes a storage grain, the storage grain includes at least one storage block, and each storage block includes a storage array and a redundant storage array.

[0019] The storage device further includes a control chip, which is packaged together with the storage chip, and the control chip receives the repair and replacement information.

[0020] The beneficial effects of the embodiments of the present application are as follows: the storage device repair method provided by the present application obtains the number of failed storage cells on each first signal line by traversing all first signal lines in the storage array, and determines that the first signal line meets the first repair strategy if the number of failed storage cells on the first signal line is greater than the number of valid second redundant signal lines in the redundant storage array. When the first signal line meets the first repair strategy, the first redundant signal line is replaced with the first redundant signal line, thereby repairing the failed storage cells in the storage array. The repair method of the embodiment of the present invention uses a first redundant signal line to repair as many failed storage cells as possible in the first direction at one time, so that these failed storage cells do not need to be repaired one by one in the second direction by multiple second redundant signal lines, which can improve the utilization rate of the limited first redundant signal lines and the second redundant signal lines, thereby improving the repair rate of failed storage cells in the storage device; further, the repair of failed storage cells in the storage device enables the storage device to be used normally. For example, if the storage device repair method provided by the present application is applied to the pre-production testing of the storage device, the qualified rate of the mass production of the storage device can be improved; if the storage device repair method provided by the present application is applied to the repair of the storage device during normal operation, the repair time of each power-on can be shortened. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0022] in:

[0023] Figure 1 is a structural diagram of an embodiment of a storage device provided by the present application;

[0024] Figure 2 This is a flowchart of an embodiment of a method for repairing a storage device provided by the present application;

[0025] Figure 3 yes Figure 2 A schematic flow chart of an embodiment of step S200 in the embodiment;

[0026] Figure 4 yes Figure 3 A flow chart of an embodiment of step S230 in the embodiment;

[0027] Figure 5 yes Figure 2 A flow chart of another embodiment of step S200 in the embodiment;

[0028] Figure 6 yes Figure 2 A flow chart of another embodiment of step S200 in the embodiment;

[0029] Figure 7 This is a flow chart of another embodiment of the method for repairing a storage device provided by the present application;

[0030] Figure 8 yes Figure 7 A schematic flow chart of an embodiment of step S500 in the embodiment;

[0031] Figure 9 yes Figure 7 A flow chart of another embodiment of step S500 in the embodiment;

[0032] Figure 10 yes Figure 7 A flow chart of another embodiment of step S500 in the embodiment;

[0033] Figure 11 This is a flow chart of an embodiment of repairing and replacing a failed storage unit on a first signal line based on a first repair strategy provided by the present application;

[0034] Figure 12 This is a flow chart of an embodiment of repairing and replacing a failed storage unit on a second signal line based on a first repair strategy provided by the present application;

[0035] Figure 13 This is a flow chart of an embodiment of repairing and replacing a failed storage unit on a first signal line based on a second repair strategy provided by the present application;

[0036] Figure 14 This is a flow chart of an embodiment of repairing and replacing a failed storage unit on a second signal line based on a second repair strategy provided by the present application;

[0037] Figure 15 This is a structural diagram of an embodiment of a repair system for a storage device provided by the present application;

[0038] Figure 16 yes Figure 15 A schematic structural diagram of another embodiment of the storage device in the embodiment. DETAILED DESCRIPTION

[0039] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. It will be understood that the specific embodiments described herein are only used to explain the present application, rather than to limit the present application. It should also be noted that, for ease of description, only some, rather than all, structures related to the present application are shown in the drawings. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0040] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0041] See Figure 1 , Figure 1 This is a schematic diagram of the structure of an embodiment of the storage device provided by this application. Figure 1 As shown, a storage device includes a storage array and a redundant storage array. The storage array includes a plurality of first signal lines and a plurality of second signal lines. The first signal lines extend along a first direction, the second signal lines extend along a second direction, and the plurality of first signal lines are sequentially spaced apart in the second direction, while the plurality of second signal lines are sequentially spaced apart in the first direction. The first signal lines may be column signal lines / row signal lines, and correspondingly, the second signal lines may be row signal lines / column signal lines. The redundant storage array includes a first redundant signal line and a second redundant signal line, wherein the first redundant signal line extends along the first direction, the second redundant signal line extends along the second direction, and the plurality of first redundant signal lines are sequentially spaced apart in the second direction, while the plurality of second redundant signal lines are sequentially spaced apart in the first direction. The first redundant signal line may be a redundant column signal line / redundant row signal line, and correspondingly, the second redundant signal line may be a redundant row signal line / redundant column signal line. Using the redundant row signal lines / column signal lines in the redundant storage array to repair and replace row signal lines / column signal lines in the storage array means mapping the addresses of the row signal lines / column signal lines in the storage array to the addresses of the redundant row signal lines / column signal lines.

[0042] The present application provides a method for repairing a storage device. The method can be applied to the above-mentioned storage device, that is, the execution subject of the repair method can be the storage device, and the execution subject of the repair method can also be an electronic device including the storage device, etc. The execution subject of the repair method is not specifically limited here. Figure 2 , Figure 2FIG. 1 is a flow chart of an embodiment of a method for repairing a storage device provided by the present application. Figure 2 As shown, the repair method includes the following steps:

[0043] Step S100: traverse the first signal lines of the memory array to obtain the number of failed memory cells on each first signal line.

[0044] A storage array includes a plurality of first signal lines and a plurality of second signal lines, and storage cells are arranged on the first signal lines and the second signal lines, wherein the plurality of first signal lines are sequentially spaced in a second direction, and each first signal line extends along the first direction. When writing data to and reading data from a storage cell, when the written data is consistent with the read data, the storage cell is considered a normal storage cell; when the written data is inconsistent with the read data, the storage cell is considered an invalid storage cell, i.e., a failed storage cell. The first signal lines of the storage array are traversed to obtain the number of failed storage cells on each first signal line. Preset data can be written to the storage cells on the first signal line when traversing to the corresponding first signal line, and the actual data read is compared with the preset data. Storage cells with inconsistent comparison results are considered failed storage cells, thereby obtaining the number of failed storage cells on each first signal line.

[0045] S200: Based on a first repair strategy, using a first redundant signal line to replace a first signal line that complies with the first repair strategy.

[0046] A redundant memory array includes a plurality of first redundant signal lines and a plurality of second redundant signal lines, wherein the first redundant signal lines extend along a first direction and are sequentially spaced apart in a second direction; and the second redundant signal lines extend along a second direction and are sequentially spaced apart in the first direction. When the number of failed memory cells on a first signal line is greater than the number of valid second redundant signal lines, the first signal line complies with a first repair strategy, and the first signal line is replaced with a first redundant signal line in the redundant memory array based on the first repair strategy. Optionally, replacing the first signal line with a first redundant signal line refers to mapping the address of the first signal line to the address of the first redundant signal line. The number of valid second redundant signal lines refers to the number of unused second redundant signal lines.

[0047] For example, if the number of failed memory cells on multiple first signal lines is 4, 2, 1, etc., respectively, and the number of second redundant signal lines is 3, then the first signal line corresponding to the number of failed memory cells being 4 complies with the first repair strategy, and one first redundant signal line is used to replace the first signal line, thereby repairing the first signal line. In this case, the number of valid second redundant signal lines becomes 2.

[0048] The present invention provides a method for repairing a storage device by traversing all first signal lines in a storage array to obtain the number of failed storage cells on each first signal line. If the number of failed storage cells on a first signal line is greater than the number of valid second redundant signal lines in a redundant storage array, the method determines that the first signal line complies with a first repair strategy. If the first signal line complies with the first repair strategy, the method replaces the first signal line with the first redundant signal line, thereby repairing failed storage cells in the storage array. The repair method of an embodiment of the present invention uses a first redundant signal line to repair as many failed storage cells as possible in a first direction at a time, so that these failed storage cells do not need to be repaired one by one in a second direction by multiple second redundant signal lines. This can improve the utilization rate of the limited first redundant signal lines and the second redundant signal lines, thereby improving the repair rate of failed storage cells in the storage device. Furthermore, the repair of failed storage cells in the storage device enables the storage device to be used normally. For example, if the repair method of the storage device provided by the present invention is applied to the pre-production testing of the storage device, the qualified rate of the mass production of the storage device can be improved. If the repair method of the storage device provided by the present invention is applied to the repair of the storage device during normal operation, the repair time of each power-on can be shortened.

[0049] Optionally, see Figure 3 , Figure 3 yes Figure 2 The flowchart of step S200 in the embodiment is as follows: Figure 3 As shown, step S200 is based on the first repair strategy, using the first redundant signal line to replace the first signal line that complies with the first repair strategy, including the following steps:

[0050] Step S210 : performing a first sorting on the traversed first signal lines based on the number of failed memory cells.

[0051] The number of failed memory cells on each first signal line is obtained, and the traversed first signal lines are first sorted according to the number of failed memory cells thereon.

[0052] Specifically, when performing a first sorting on the failed storage cells on the first signal line, the failed storage cells are sorted from most to least according to the number of the failed storage cells, so that when the first signal line is repaired and replaced, when the first signal line is selected based on the order after the first sorting, more failed storage cells in the storage array can be repaired with a limited redundant storage array.

[0053] Step S220 : Based on the order of the first sort, determine whether the number of failed memory cells on the current first signal line is greater than the number of valid second redundant signal lines.

[0054] After performing a first sort on the number of failed memory cells on the first signal line, it is determined in sequence according to the order of the last first signal line whether the number of failed memory cells on the current first signal line is greater than the number of valid second redundant signal lines, so as to determine whether the number of failed memory cells on the current first signal line is greater than the number of valid second redundant signal lines.

[0055] Step S230 : In response to the number of failed memory cells on the current first signal line being greater than the number of valid second redundant signal lines, replacing the current first signal line with a first redundant signal line.

[0056] In response to the number of failed memory cells on the current first signal line being greater than the number of valid second redundant signal lines, the current first signal line is replaced with a first redundant signal line so that the redundant memory cells on the first redundant signal line repair and replace the failed memory cells on the current first signal line.

[0057] This embodiment performs a first sorting of the first signal lines based on the number of failed memory cells on each first signal line, and determines whether the number of failed memory cells on the current first signal line is greater than the number of valid second redundant signal lines based on the order after the first sorting. In other words, it confirms whether the current first signal line complies with the first repair strategy. In response to the number of failed memory cells on the current first signal line being greater than the number of valid second redundant signal lines, the current first signal line is replaced with a first redundant signal line, thereby repairing the failed memory cells on the current first signal line. Furthermore, through sophisticated judgment means, full utilization of limited redundant resources is achieved, thereby improving the repair efficiency of the storage device.

[0058] Optionally, the redundant storage array has failed redundant storage units like the storage array. To ensure that the redundant storage resources in the redundant storage array effectively repair and replace the failed storage units in the storage array, refer to Figure 4 , Figure 4 yes Figure 3 Flowchart of step S230 in the embodiment. Figure 4 As shown, replacing the current first signal line with the first redundant signal line in step S230 can be achieved by the following steps:

[0059] Step S231 : determining the number of failed redundant memory cells on each first redundant signal line, and performing a second sorting on the first redundant signal lines based on the number of failed redundant memory cells.

[0060] The number of failed redundant memory cells on each first redundant signal line in the redundant memory array is determined, wherein the number of failed redundant memory cells on each first redundant signal line can also be determined by writing preset data to the redundant memory cells on each first redundant signal line, comparing the actual data read with the preset data, and identifying redundant memory cells with inconsistent comparison results as failed redundant memory cells, thereby obtaining the number of failed redundant memory cells on each first signal line. The first redundant signal lines are second-sorted based on the number of failed redundant memory cells on the first redundant signal lines.

[0061] Specifically, the second sorting order is based on the number of failed redundant memory cells from small to large. It can be understood that the number of failed redundant memory cells is sorted from small to large, so as to perform the second sorting order from small to large on the first redundant signal lines, so as to facilitate determining whether the redundant memory cells on the first redundant signal lines are effective repair replacements when repairing and replacing failed memory cells in the memory array.

[0062] Step S232: Based on the second sorting order, determine whether the number of failed redundant memory cells on the current first redundant signal line is less than the number of valid second redundant signal lines.

[0063] After performing a second sort on the first redundant signal lines, it is determined in sequence based on the second sort whether the number of failed redundant memory cells on the current first redundant signal line is less than the number of valid second redundant signal lines, so as to further determine whether the repair and replacement of the current first signal line using the current first redundant signal line is a valid repair and replacement.

[0064] Step S233: In response to the number of failed redundant memory cells on the current first redundant signal line being less than the number of valid second redundant signal lines, replacing the current first redundant signal line with the current first redundant signal line.

[0065] In response to the number of failed redundant memory cells on the current first redundant signal line being less than the number of valid second redundant signal lines, the current first redundant signal line is replaced with the current first redundant signal line. It is understandable that when the current first redundant signal line replaces the current first signal line, since the number of failed redundant memory cells on the current first redundant signal line is less than the number of valid second redundant signal lines, the current first signal line repair and replacement using the current first redundant signal line is still a valid repair and replacement.

[0066] This embodiment performs a second sorting on the failed redundant memory cells on the first redundant signal line, and based on the result of the second sorting, sequentially determines whether the number of failed redundant memory cells on the current first redundant signal line is less than the number of valid second redundant signal lines. This determines whether replacing the current first signal line with the current first redundant signal line is a valid repair and replacement process. Only when the repair and replacement process is guaranteed to be valid is the current first redundant signal line used to repair and replace the current first signal line, thereby improving the repair efficiency of failed memory cells in the memory array and further improving the product repair rate of the memory device.

[0067] Optionally, see Figure 5 , Figure 5 yes Figure 2 In the embodiment, step S200 is a flow chart of another embodiment, wherein step S230 can be implemented through steps S231 to S233. Figure 5 As shown, after step S230, step S200 further includes the following steps:

[0068] Step S240: marking the current first redundant signal line after replacement as used, and determining whether the current first redundant signal line is the last first redundant signal line.

[0069] After the current first redundant signal line is replaced with the current first redundant signal line, that is, after the replacement is completed, the current first redundant signal line is marked as used. After marking, it is determined whether the current first redundant signal line is the last used first redundant signal line to determine whether the current first redundant signal line is the last used first redundant signal line among the multiple first redundant signal lines.

[0070] Step S250 : In response to the current first redundant signal line not being the last first redundant signal line, determining whether the current first signal line is the last first signal line in the memory array.

[0071] In response to the current first redundant signal line not being the last used first redundant signal line, that is, unused first redundant signal lines still exist, it is further determined whether the current first signal line is the last first signal line in the storage array, that is, whether repair of the first signal lines in the storage array based on the first repair strategy has been completed. The determination of whether the current first signal line is the last first signal line in the storage array may refer to the last first signal line among multiple first signal lines in the storage array, or the last first signal line among multiple first signal lines in the storage array that have failed storage cells requiring repair.

[0072] Step S260: In response to the current first signal line not being the last first signal line in the memory array, returning to the step of continuing to execute the first sorting sequence to determine whether the number of failed memory cells on the current first signal line is greater than the number of valid second redundant signal lines.

[0073] In response to the current first signal line not being the last first signal line in the memory array, it can be understood that the first signal lines after the first sorting have not been completely traversed, and the process returns to the step of continuing to execute the sequence based on the first sorting to determine whether the number of failed memory cells on the current first signal line is greater than the number of valid second redundant signal lines. The next first signal line based on the first sorting sequence is updated as the current first signal line, and the next first redundant signal line based on the second sorting sequence is updated as the current first redundant signal line.

[0074] This embodiment avoids reusing used first redundant signal lines during the current repair process by marking the first redundant signal lines that have been used. When it is determined that there are remaining redundant resources available based on the used first redundant signal lines, it is further determined whether the current first signal line is the last first redundant signal line and whether the traversal of the first signal lines in the storage array has been completed. This allows failed storage cells on the first signal lines in the storage array to be repaired and replaced if they comply with the first repair strategy, thereby improving the repair efficiency of the storage device.

[0075] Optionally, see Figure 6 , Figure 6 yes Figure 2 A flow chart of another embodiment of step S200 in the embodiment is as follows: Figure 6 As shown, based on the above embodiment, step S200 may further include the following steps:

[0076] Step S270 : in response to the current first redundant signal line being the last first redundant signal line, the step of replacing the first signal line complying with the first repair strategy with the first redundant signal line based on the first repair strategy ends.

[0077] In response to the current first redundant signal line being the last first redundant signal line, that is, the current first redundant signal line being the last first redundant signal line among the plurality of first redundant signal lines that can be used to repair a failed memory cell in the memory array, which means that the first redundant signal lines in the redundant memory array have been used up, the step of replacing the first signal line that complies with the first repair strategy with the first redundant signal line based on the first repair strategy is terminated. And / or

[0078] Step S280 : In response to the current first signal line being the last first signal line in the memory array, the step of replacing the first signal line complying with the first repair strategy with the first redundant signal line based on the first repair strategy ends.

[0079] In response to the current first signal line being the last first signal line in the storage array, that is, the current first signal line is the last first signal line among the multiple first signal lines traversed in the storage array, the step of replacing the first signal line that complies with the first repair strategy with the first redundant signal line based on the first repair strategy is terminated. And / or

[0080] Step S290: In response to the number of failed redundant memory cells on the current first redundant signal line being not less than the number of valid second redundant signal lines, the step of replacing the first signal line complying with the first repair strategy with the first redundant signal line based on the first repair strategy is terminated.

[0081] In response to the number of failed redundant memory cells on the current first redundant signal line being not less than the number of failed redundant memory cells on the current first signal line, i.e., the number of failed redundant memory cells on the current first signal line being less than the number of failed redundant memory cells on the current first redundant signal line, the repair replacement of the first signal line by the current first redundant signal line is not a valid repair replacement, and the step of replacing the first signal line that complies with the first repair strategy with the first redundant signal line based on the first repair strategy is terminated. It is understandable that after the first signal lines are sorted based on the first order (i.e., the first signal lines are sorted based on the number of failed memory cells to the number of failed memory cells), the first signal lines are traversed from the number of failed memory cells to the number of failed redundant memory cells. If the number of failed memory cells on the current first signal line is less than the number of failed redundant memory cells on the current first redundant signal line, the number of failed memory cells on the remaining untraversed first signal lines is less than the number of failed memory cells on the current first signal line, and similarly, is less than the number of failed redundant memory cells on the first redundant signal line. At this point, the step of replacing the first signal line that complies with the first repair strategy with the first redundant signal line based on the first repair strategy is terminated.

[0082] This embodiment terminates the step of replacing first signal lines that comply with the first repair strategy with first redundant signal lines based on the first repair strategy when the current first redundant signal line is the last first redundant signal line, i.e., the first redundant signal line is exhausted; and / or the current first signal line is the last first signal line in the storage array, i.e., the current first signal line is the last first signal line among multiple first signal lines traversed in the storage array; and / or the number of failed storage cells on the current first redundant signal line is not less than the number of valid second redundant signal lines, thereby promptly stopping repair and replacement that does not meet the requirements, thereby improving the repair efficiency of failed storage cells in the storage device.

[0083] Optionally, since the storage array further includes multiple second signal lines and the redundant storage array further includes multiple second redundant signal lines, after the first signal line in the storage array is repaired and replaced based on the first repair strategy, the repair method may further include the following steps:

[0084] Step S300: Based on the first repair strategy, using a valid second redundant signal line to replace the second signal line that complies with the first repair strategy.

[0085] A redundant memory array includes a plurality of first redundant signal lines and a plurality of second redundant signal lines, wherein the first redundant signal lines extend along a first direction and are sequentially spaced apart in a second direction; and the second redundant signal lines extend along a second direction and are sequentially spaced apart in the first direction. When the number of failed memory cells on a second signal line is greater than the number of valid first redundant signal lines, the second signal line complies with a first repair strategy. Based on the first repair strategy, the second signal line is replaced with the second redundant signal line in the redundant memory array to repair the failed memory cells on the second signal line. The number of failed memory cells on the second signal line that complies with the first repair strategy is greater than the number of valid first redundant signal lines. The number of valid first redundant signal lines refers to the number of unused first redundant signal lines.

[0086] The specific implementation process of step S300 can refer to the implementation process of any embodiment of the above-mentioned step S200, which will not be repeated here.

[0087] Furthermore, in specific applications, the execution order of step S200 and step S300 can be set according to actual conditions. That is, in specific applications, step S300 can be executed first and then step S200; or step S200 can be executed first and then step S300. The execution order of step S200 and step S300 is not specifically limited here.

[0088] This embodiment traverses all second signal lines in a storage array to obtain the number of failed storage cells on each second signal line. If the number of failed storage cells on a second signal line is greater than the number of valid first redundant signal lines in a redundant storage array, the second signal line is determined to comply with a first repair strategy. If the second signal line complies with the first repair strategy, the second redundant signal line is used to replace the second signal line, thereby repairing failed storage cells in the storage array and improving the efficiency of repairing failed storage cells in the storage array.

[0089] Optionally, in a DRAM chip manufacturing process, the number of failed memory cells in the column signal line direction of the memory array is greater than the number of failed memory cells in the row signal line direction of the memory array, and the number of redundant column signal lines in the redundant memory array is less than the number of redundant row signal lines. Therefore, when, based on the first repair strategy, the first redundant signal line is used to replace the first signal line that complies with the first repair strategy, the first signal line in the memory array is a column signal line, the second signal line in the memory array is a row signal line, the first redundant signal line in the redundant memory array is a redundant column signal line, and the second redundant signal line in the redundant memory array is a redundant row signal line.

[0090] This embodiment preferentially uses redundant column signal lines in a redundant memory array to repair and replace column signal lines in the memory array, so as to repair as many failed memory cells in the column signal line direction as possible using one redundant column signal line, thereby improving the utilization rate of each first redundant signal line and further improving the repair efficiency of failed memory cells in the memory array.

[0091] Optionally, in order to improve the repair efficiency of the storage device, after the step of replacing the first signal line that complies with the first repair strategy with the first redundant signal line based on the first repair strategy is completed in response to the current first signal line being the last first signal line in the storage array, that is, when the first redundant signal lines in the redundant storage array are not consumed, referring to Figure 7 , Figure 7 FIG. 1 is a flow chart of another embodiment of the method for repairing a storage device provided by the present application. Figure 7 As shown, the repair method of this embodiment includes the following steps:

[0092] Step S100: traversing first signal lines of a memory array to obtain the number of failed memory cells on each first signal line, wherein the plurality of first signal lines are sequentially spaced in the second direction and each first signal line extends along the first direction.

[0093] The specific content of step S100 is mentioned above and will not be repeated here.

[0094] Step S200: Based on a first repair strategy, a first redundant signal line is used to replace a first signal line that complies with the first repair strategy.

[0095] The specific content of step S200 is as mentioned above and will not be described here in detail. Step S200 can be implemented by selecting any embodiment of step S200 according to actual conditions and will not be specifically limited here.

[0096] Step S400: traverse the first signal lines of the memory array that have been repaired and replaced using the first repair strategy, and obtain the failed memory cells on each first signal line.

[0097] After the failed storage cells on the first signal line and / or the second signal line in the storage array are repaired by the first repair strategy, the failed storage cells in the storage array are changed. At this time, the first signal lines in the storage array that have been repaired and replaced by the first repair strategy are traversed to reacquire the failed storage cells on each first signal line that has not been repaired and replaced by the first redundant signal line.

[0098] Step S500: Based on the second repair strategy, the first redundant signal line is used to replace the first signal line that complies with the second repair strategy.

[0099] Based on the second repair strategy, the first redundant signal line is used to replace the first signal line that complies with the second repair strategy, wherein the number of failed memory cells on the first signal line that complies with the second repair strategy is less than the number of valid second redundant signal lines.

[0100] This embodiment further performs repair and replacement based on a second repair strategy on failed storage cells in the storage array after the failed storage cells in the storage array have been repaired and replaced based on a first repair strategy, thereby fully utilizing redundant resources in the redundant storage array, thereby improving the repair rate of failed storage cells in the storage array and further improving the product pass rate of the storage device.

[0101] Specifically, see Figure 8 , Figure 8 yes Figure 7 The flowchart of step S500 in the embodiment is as follows: Figure 8 As shown, step S500 can be implemented by the following steps, specifically including:

[0102] Step S510 : performing a first sorting on the traversed first signal lines based on the number of failed memory cells.

[0103] The first signal lines are re-sorted in a first order of most to least based on the number of failed memory cells.

[0104] Step S520 : determining whether the number of failed memory cells currently on the first signal line is zero based on the order of the first sort.

[0105] Whether the number of failed memory cells on the current first signal line is zero is determined in sequence based on the first sorting order, so as to determine whether the number of failed memory cells on the current first signal line is zero. It is understandable that, starting from the order of the number of failed memory cells on the first signal line from the highest to the lowest, the determination of whether the number of failed memory cells on the current first signal line is zero is performed in sequence. If the number of failed memory cells on the current first signal line is zero, the number of failed memory cells on the first signal line that is sorted after the current first signal line is also zero.

[0106] Step S530 : in response to the number of failed memory cells on the current first signal line being non-zero, determining the number of failed redundant memory cells on each valid first redundant signal line, and performing a second sorting on the valid first redundant signal lines based on the number of failed redundant memory cells.

[0107] In response to the number of failed memory cells on the current first signal line being non-zero, the number of failed redundant memory cells on each valid first redundant signal line is further determined, and the valid first redundant signal lines are second-sorted from least to greatest based on the number of failed redundant memory cells.

[0108] Step S540 : determining whether the number of failed redundancy memory cells on the valid current first redundancy signal line is less than the number of failed memory cells on the current first signal line based on the order of the second sort.

[0109] It is determined in sequence in the second sorted order whether the number of failed redundancy memory cells on the valid current first redundancy signal line is less than the number of failed memory cells on the current first signal line.

[0110] Step S550 : In response to the number of failed redundancy memory cells on the valid current first redundancy signal line being less than the number of failed memory cells on the current first signal line, replacing the current first redundancy signal line with the current first redundancy signal line.

[0111] In response to the number of failed redundancy memory cells on the valid current first redundancy signal line being less than the number of failed memory cells on the current first signal line, the current first signal line is replaced with the valid current first redundancy signal line.

[0112] This embodiment performs a first sort on the failed memory cells on the first signal line that comply with the second repair strategy, and determines whether the number of failed memory cells on the current first signal line is zero based on the first sorted order, thereby determining whether there are still failed memory cells in the memory array that need to be repaired and replaced. When the number of failed memory cells is not zero, a second sort is further performed on the number of failed redundant memory cells on the valid first redundant signal line, and based on the second sorted order, it is determined whether the number of failed redundant memory cells on the valid current first redundant signal line is less than the number of failed memory cells on the current first signal line, thereby ensuring that the replacement of the current first signal line with the current first redundant signal line is an effective repair and replacement, thereby improving the repair efficiency of the memory device.

[0113] Optionally, see Figure 9 , Figure 9 yes Figure 7 A flow chart of another embodiment of step S500 in the embodiment, Figure 8 Based on the examples, Figure 9As shown, step S500 may further include the following steps:

[0114] Step S560: Determine whether the valid current first redundant signal line is the last first redundant signal line.

[0115] The current first redundant signal line after replacement is marked as used, and it is determined whether the current first redundant signal line is the last first redundant signal line, so as to determine whether all valid first redundant signal lines in the redundant memory array are used up.

[0116] Step S570 : in response to the valid current first redundant signal line not being the last first redundant signal line, returning to the step of continuing to execute the first sorting sequence to determine whether the number of failed memory cells on the current first signal line is zero.

[0117] In response to the fact that the valid current first redundant signal line is not the last first redundant signal line, that is, the valid first redundant signals in the redundant memory array have not been exhausted, and the failed memory cells in the memory array can continue to be repaired and replaced, the process returns to the step of determining whether the number of failed memory cells on the current first signal line is less than the number of valid second redundant signal lines based on the first sorting order. The next first signal line based on the first sorting order is updated as the current first signal line, and the next valid first redundant signal line based on the second sorting order is updated as the valid current first redundant signal line.

[0118] This embodiment determines whether the current valid first redundant signal line is the last first redundant signal line to determine whether there are any unused first redundant signal lines that can be used to repair and replace the first signal line. If the current first redundant signal line is not the last first redundant signal line, it continues to determine whether the number of failed memory cells on the current first signal line is zero. If the number of failed memory cells on the first signal line is not zero, the valid first redundant signal line is continued to be used to repair and replace the first signal line to be repaired, thereby improving the repair efficiency of failed memory cells in the memory array.

[0119] Optionally, see Figure 10 , Figure 10 yes Figure 7 A flow chart of another embodiment of step S500 in the embodiment, Figure 9 Based on the examples, Figure 10 As shown, step S500 may further include the following steps:

[0120] Step S581: In response to the number of failed memory cells on the current first signal line being zero, the step of replacing the first signal line that complies with the second repair strategy with a valid first redundant signal line based on the second repair strategy is terminated. And / or

[0121] In response to the number of failed storage cells on the current first signal line being zero, that is, the failed storage cells on the first signal line in the storage array have been repaired and replaced, the following step of replacing the first signal line that complies with the second repair strategy with the valid first redundant signal line is completed based on the second repair strategy to complete the repair and replacement of the failed storage cells in the storage array.

[0122] Step S582: In response to the number of failed redundant memory cells on the valid current first redundant signal line being greater than the number of failed memory cells on the current first signal line, the step of replacing the first signal line that complies with the second repair strategy with the valid first redundant signal line based on the second repair strategy is terminated.

[0123] In response to the number of failed redundant memory cells on the valid current first redundant signal line being greater than the number of failed memory cells on the current first signal line, in order to avoid the situation where the number of introduced failed redundant memory cells is greater than the number of original failed memory cells when the current first redundant signal line is used to replace the current first signal line, thereby causing an invalid repair and replacement, the step of replacing the first signal line that complies with the second repair strategy with the valid first redundant signal line based on the second repair strategy is terminated, thereby terminating the repair and replacement of the failed memory cells in the memory array.

[0124] Step S583 : in response to the current first redundant signal line being the last first redundant signal line, the step of replacing the first signal lines complying with the second repair strategy with valid first redundant signal lines based on the second repair strategy is terminated.

[0125] In response to the current first redundant signal being the last first redundant signal line, that is, the first redundant signal lines are exhausted, the step of replacing the first signal lines that comply with the second repair strategy with valid first redundant signal lines based on the second repair strategy is terminated to terminate the repair and replacement of the failed storage cells in the storage array.

[0126] In this embodiment, when the number of failed memory cells on the current first signal line is zero, that is, when the failed memory cells in the memory array are replaced and repaired; and / or the number of failed redundant memory cells on the current first redundant signal line is greater than the number of failed memory cells on the current first signal line; and / or the current first redundant signal line is the last first redundant signal line, that is, when the first redundant signal line is exhausted, the step of replacing the first signal line that complies with the second repair strategy with a valid first redundant signal line is terminated, thereby improving the repair efficiency of the failed memory cells in the memory array.

[0127] Optionally, the repair method further includes the following steps:

[0128] Step S600: Based on the second repair strategy, using a valid second redundant signal line to replace the second signal line that complies with the second repair strategy.

[0129] Based on the second repair strategy, the second redundant signal line is used to replace the second signal line that complies with the second repair strategy, wherein the number of failed memory cells on the second signal line that complies with the second repair strategy is less than the number of valid first redundant signal lines.

[0130] The specific implementation process of step S600 may refer to the implementation process of any embodiment of the above-mentioned step S500, which will not be repeated here.

[0131] Furthermore, in a specific application, the execution order of step S500 and step S600 can be set according to actual conditions. That is, in a specific application, step S600 can be executed first and then step S500; or step S500 can be executed first and then step S600. The execution order of step S500 and step S600 is not specifically limited here.

[0132] This embodiment further performs repair and replacement based on a second repair strategy on failed storage cells in the storage array after the failed storage cells in the storage array have been repaired and replaced based on a first repair strategy, thereby fully utilizing redundant resources in the redundant storage array, thereby improving the repair rate of failed storage cells in the storage array and further improving the product pass rate of the storage device.

[0133] Optionally, see Figures 11 to 14 , Figure 11 This is a flow chart of an embodiment of repairing and replacing a failed storage unit on a first signal line based on a first repair strategy provided by the present application;

[0134] Figure 12 This is a flow chart of an embodiment of repairing and replacing a failed storage unit on a second signal line based on a first repair strategy provided by the present application; Figure 13 This is a flow chart of an embodiment of repairing and replacing a failed storage unit on a first signal line based on a second repair strategy provided by the present application; Figure 14 This is a flow chart of an embodiment of repairing and replacing a failed storage unit on a second signal line based on a second repair strategy provided by the present application. Figures 11 to 14 Another embodiment of the method for repairing the storage device of the present application can be formed as follows: Figures 11 to 14As shown, the storage array is first traversed to obtain the number of failed storage cells on each first signal line and the number of failed storage cells on each second signal line, and the number of failed storage cells on each first signal line and the number of failed storage cells on each second signal line are saved. For failed storage cells on a first signal line, if their number exceeds the number of currently valid second redundant signal lines, then even if all second redundant signal lines are used to repair and replace a failed storage cell on a first signal line, it is impossible to completely eliminate all failed storage cells on the first signal line. Therefore, for such first signal lines, one first redundant signal line must be used for repair and replacement. Similarly, for failed storage cells on a second signal line, if their number exceeds the number of currently valid first redundant signal lines, then even if all first redundant signal lines are used, it is impossible to completely eliminate all failed storage cells on the second signal line. Therefore, for such second signal lines, one second redundant signal line must be used for repair. Therefore, the storage array is repaired based on the first repair strategy.

[0135] Based on the first repair strategy:

[0136] Step 1: If Figure 11 As shown, the number of failed memory cells on the first signal line is first sorted from most to least, and the current first signal line is selected according to the first sorting order. If the number of failed memory cells on the current first signal line exceeds the number of valid second redundant signal lines, the number of failed redundant memory cells on each first redundant signal line is further determined, and a second sorting is performed from least to most. The current first redundant signal line is selected based on the second sorting order. It is further determined whether the number of failed redundant memory cells on the current first redundant signal line is greater than or equal to the number of valid second redundant signal lines. If not, the current first redundant signal line is repaired and replaced, and the current first redundant signal line is marked as used. The next step is continued until all failed memory cells on the first signal line that meet the first repair strategy are repaired and replaced, or all first redundant signal lines are used up, or the number of failed redundant memory cells on the current first redundant signal line is greater than or equal to the number of valid second redundant signal lines, thereby completing the repair and replacement of the first signal line of the memory array.

[0137] Step 2: If Figure 12As shown, the number of failed memory cells on the second signal line is first sorted from most to least, and the current second signal line is selected according to the first sorting order. If the number of failed memory cells on the current second signal line exceeds the number of valid first redundant signal lines, the number of failed redundant memory cells on each second redundant signal line is further determined, and a second sorting is performed from least to most. The current second redundant signal line is selected based on the second sorting. It is further determined whether the number of failed redundant memory cells on the current second redundant signal line is greater than or equal to the number of valid first redundant signal lines. If not, the current second redundant signal line is repaired and replaced, and the current second redundant signal line is marked as used. The next step is continued until all failed memory cells on the second signal line that meet the first repair strategy are repaired and replaced, or all second redundant signal lines are used up, or the number of failed redundant memory cells on the current second redundant signal line is greater than or equal to the number of valid first redundant signal lines, then the repair and replacement of the second signal line of the memory array is terminated.

[0138] Since the repair operation based on the first repair strategy will update the number of failed memory cells in the memory array, it is necessary to reorder after entering the second repair strategy, traverse the first signal line and the second signal line of the memory array after the first repair strategy again, and obtain the number of failed memory cells on each first signal line and the number of failed memory cells on each second signal line. Repair and replace the first signal line and the second signal line of the memory array based on the second repair strategy:

[0139] Step 1: If Figure 13 As shown, a first sorting is performed on the number of failed cells on the first signal line from most to least. Based on the first sorting, the current first signal line is selected, and it is determined whether the number of failed storage cells on the current first signal line is zero. If it is zero, that is, the number of failed storage cells in the storage array is zero, and the repair operation based on the second repair strategy is terminated. If it is not zero, the number of failed redundant storage cells on each valid first redundant signal line is determined, and a second sorting is performed from least to most. Based on the second sorting, the current first redundant signal line is selected, and it is further determined whether the number of failed redundant storage cells on the current first redundant signal line is less than the number of failed storage cells on the first signal line. If so, the current first redundant signal line is repaired and replaced, and the current first redundant signal line is marked as used, until all first redundant signal lines are used up, or the first signal line that meets the condition that the number of failed redundant storage cells on the first redundant signal line is less than the number of failed storage cells on the first signal line is repaired and replaced.

[0140] Step 2: If Figure 14As shown, a first sorting is performed on the number of failed cells on the second signal line from most to least. Based on the first sorting, a current second signal line is selected, and it is determined whether the number of failed storage cells on the current second signal line is zero. If it is zero, that is, the number of failed storage cells in the storage array is zero, and the repair operation based on the second repair strategy is terminated. If it is not zero, the number of failed redundant storage cells on each valid second redundant signal line is determined, and a second sorting is performed from least to most. Based on the second sorting, a current second redundant signal line is selected, and it is further determined whether the number of failed redundant storage cells on the current second redundant signal line is less than the number of failed storage cells on the second signal line. If so, the current second redundant signal line is repaired and replaced, and the current second redundant signal line is marked as used, until all second redundant signal lines are used up, or the second signal line where the number of failed redundant storage cells on the second redundant signal line is less than the number of failed storage cells on the second signal line is repaired and replaced.

[0141] This application also provides a storage device repair system, see Figure 15 , Figure 15 FIG. 1 is a structural diagram of an embodiment of a repair system for a storage device provided by the present application. Figure 15 As shown, the repair system 10 includes a main control device 110 and a storage device 120. The main control device 110 is used to execute the repair method of any of the above embodiments to generate repair replacement information. The storage device 120 is coupled to the main control device 110 and receives the repair replacement information. The storage device 120 includes a storage grain 121, and the storage grain 121 includes at least one storage block (not marked in the figure), and each storage block includes a storage array (not marked in the figure) and a redundant storage array (not marked in the figure). It can be understood that the main control device 110 is used to execute the repair method of any of the above embodiments to generate repair replacement information, and the storage device 120 receives the repair replacement information to use the redundant resources of the redundant storage array to repair and replace the failed storage unit in the storage array.

[0142] The storage device repair system provided in the present application comprises a main control device 110 and a storage device 120, wherein the main control device 110 is configured to execute the repair method of any of the above-described embodiments to generate repair replacement information, and the storage device 120 repairs failed storage cells in the storage array based on the repair replacement information. Specifically, the system uses a first redundant signal line to repair as many failed storage cells as possible in a first direction at one time, so that these failed storage cells do not need to be repaired one by one in a second direction using multiple second redundant signal lines. This improves the utilization rate of the limited first redundant signal lines and second redundant signal lines, thereby improving the repair rate of failed storage cells in the storage device 120. Furthermore, the repair of failed storage cells in the storage device 120 enables the storage device 120 to be used normally. For example, if the repair method of the storage device 120 provided in the present application is applied to the pre-mass production testing of the storage device 120, the qualified rate of the mass production of the storage device 120 can be improved. If the repair method of the storage device 120 provided in the present application is applied to the repair of the storage device 120 during normal operation, the repair time for each power-on can be shortened.

[0143] In other embodiments, see Figure 16 , Figure 16 yes Figure 15 A structural diagram of another embodiment of the storage device in the embodiment is shown as follows: Figure 16 As shown, the storage device 120 further includes a control die 122, which is connected to the storage die 121 and coupled to the master device 110. The control die 122 and the storage die 121 are packaged together. The control die 122 is configured to receive repair and replacement information. Specifically, the control die 122 receives the repair and replacement information generated by the master device and, based on the repair and replacement information, uses the redundant resources of the redundant storage array to repair and replace failed storage cells in the storage array.

[0144] In this embodiment, a control die 122 is provided in the storage device 120 so that the storage device 120 can repair the failed storage cells in the storage array according to the changes of the failed storage cells in the storage array.

[0145] In other embodiments, the repair method and repair system of the present invention can be applied to the test phase of the storage device 120, such as the CP (Chip Probe) test phase. In this embodiment, the main control device 110 can be implemented by the host computer of the test machine, which executes any one of the repair methods in the aforementioned repair method embodiments to generate repair replacement information for use in repairing failed storage units when the storage device 120 is operating normally after leaving the factory.

[0146] The above description is only an implementation method of the present application and does not limit the scope of the patent application. Any equivalent structure or equivalent process transformation made according to the contents of the description and drawings of this application, or directly or indirectly applied in other related technical fields, are also included in the scope of patent protection of this application.

Claims

1. A method for repairing a storage device, characterized in that: The storage device includes a storage array and a redundant storage array, wherein redundant storage cells in the redundant storage array are used to repair and replace failed storage cells in the storage array, and the repair method includes: traversing first signal lines of the storage array to obtain the number of failed storage cells on each of the first signal lines, wherein the first signal lines are sequentially spaced in a second direction and each of the first signal lines extends along the first direction; Based on a first repair strategy, replacing the first signal line that complies with the first repair strategy with a first redundant signal line, wherein the number of failed memory cells on the first signal line that complies with the first repair strategy is greater than the number of valid second redundant signal lines; The first redundant signal line extends along the first direction, and a plurality of the first redundant signal lines are sequentially spaced apart in the second direction; The second redundant signal line extends along the second direction, and a plurality of the second redundant signal lines are sequentially spaced apart in the first direction; When replacing the first signal line that complies with the first repair strategy with the first redundant signal line, the number of failed redundant memory cells on each of the first redundant signal lines is determined, and the first redundant signal lines are second-sorted based on the number of failed redundant memory cells; based on the order of the second sort, it is determined whether the number of failed redundant memory cells on the current first redundant signal line is less than the number of valid second redundant signal lines; and in response to the number of failed redundant memory cells on the current first redundant signal line being less than the number of valid second redundant signal lines, the first signal line that complies with the first repair strategy is replaced with the current first redundant signal line.

2. The method according to claim 1, characterized in that The replacing the first signal line that complies with the first repair strategy with the first redundant signal line based on the first repair strategy includes: performing a first sorting on the traversed first signal lines based on the number of the failed storage cells; Based on the order of the first sorting, determining whether the number of failed memory cells on the current first signal line is greater than the number of valid second redundant signal lines; In response to the number of failed memory cells on the current first signal line being greater than the number of valid second redundancy signal lines, the current first signal line is replaced with the first redundancy signal line.

3. The method according to claim 2, characterized in that The first sorting order is an order of the number of failed storage units from most to least.

4. The method according to claim 1, wherein The second sorting order is an order from least to greatest according to the number of failed redundant memory cells.

5. The method according to claim 2, characterized in that Also includes: Marking the current first redundant signal line after replacement as used, and determining whether the current first redundant signal line is the last first redundant signal line; In response to the current first redundant signal line not being the last first redundant signal line, determining whether the current first signal line is the last first signal line in the memory array; In response to the current first signal line not being the last first signal line in the storage array, returning to the step of continuing to execute the sequence based on the first sorting to determine whether the number of failed storage cells on the current first signal line is greater than the number of valid second redundant signal lines, wherein the next first signal line based on the first sorting sequence is updated to the current first signal line, and the next first redundant signal line based on the second sorting sequence is updated to the current first redundant signal line.

6. The method according to claim 5, characterized in that In response to the current first redundant signal line being the last first redundant signal line, ending the step of replacing the first signal line complying with the first repair strategy with the first redundant signal line based on the first repair strategy; and / or in response to the current first signal line being the last first signal line in the memory array, ending the step of replacing the first signal line that complies with the first repair strategy with the first redundant signal line based on the first repair strategy; And / or in response to the number of failed redundant memory cells on the current first redundant signal line being not less than the number of valid second redundant signal lines, ending the step of replacing the first signal line that complies with the first repair strategy with the first redundant signal line based on the first repair strategy.

7. The method according to claim 1, characterized in that Also includes: Based on the first repair strategy, the second signal line that complies with the first repair strategy is replaced with the valid second redundant signal line, wherein the number of failed storage cells on the second signal line that complies with the first repair strategy is greater than the number of valid first redundant signal lines.

8. The method according to claim 7, characterized in that The first signal line is a column signal line, the second signal line is a row signal line, the first redundant signal line is a redundant column signal line, and the second redundant signal line is a redundant row signal line.

9. The method according to claim 1, characterized in that Also includes: Traversing the first signal lines of the storage array that have been repaired and replaced by the first repair strategy, and obtaining a failed storage unit on each of the first signal lines; Based on a second repair strategy, the first signal lines that comply with the second repair strategy are replaced with the remaining valid first redundant signal lines.

10. The method according to claim 9, characterized in that The replacing the first signal lines that comply with the second repair strategy with the remaining valid first redundant signal lines based on the second repair strategy includes: performing a first sort on the traversed first signal lines based on the number of the failed memory cells; determining, based on the order of the first sorting, whether the number of failed memory cells currently on the first signal line is zero; In response to the number of failed memory cells on the current first signal line being non-zero, determining the number of failed redundant memory cells on each of the valid first redundant signal lines, and performing a second sorting on the valid first redundant signal lines based on the number of failed redundant memory cells; determining, based on the order of the second sort, whether the number of failed redundancy memory cells on the valid current first redundancy signal line is less than the number of failed memory cells on the current first signal line; In response to the number of failed redundancy memory cells on the valid current first redundancy signal line being less than the number of failed memory cells on the current first signal line, the current first signal line is replaced with the valid current first redundancy signal line.

11. The method according to claim 10, characterized in that Also includes: determining whether the valid current first redundant signal line is the last first redundant signal line; In response to the valid current first redundant signal line not being the last first redundant signal line, returning to the step of continuing to execute the sequence based on the first sorting to determine whether the number of failed storage cells on the current first signal line is zero, wherein the next first signal line based on the first sorting sequence is updated as the current first signal line, and the next valid first redundant signal line based on the second sorting sequence is updated as the valid current first redundant signal line.

12. The method according to claim 11, characterized in that In response to the number of failed memory cells on the current first signal line being zero, ending the step of replacing the first signal line that complies with the second repair strategy with the valid first redundant signal line based on the second repair strategy; and / or in response to the number of failed redundant memory cells on the valid current first redundant signal line being greater than the number of failed memory cells on the current first signal line, ending the step of replacing the first signal line that complies with the second repair strategy with the valid first redundant signal line based on the second repair strategy; And / or in response to the current first redundant signal line being the last first redundant signal line, ending the step of replacing the first signal line complying with the second repair strategy with the valid first redundant signal line based on the second repair strategy.

13. The method according to claim 9, characterized in that Also includes: Based on the second repair strategy, the second signal line complying with the second repair strategy is replaced with the valid second redundant signal line.

14. A storage device repair system, characterized in that: include: A main control device, executing the repair method according to any one of claims 1 to 13 to generate repair replacement information; The storage device is coupled to the main control device and receives the repair and replacement information, wherein the storage device includes: a storage chip including at least one storage block, each of the storage blocks including a storage array and a redundant storage array.

15. The repair system according to claim 14, characterized in that The storage device further includes a control die packaged together with the storage die, wherein the control die receives the repair and replacement information.

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