Reference driving circuit, reference system, method, device and medium

Abstract

The present application discloses a reference drive circuit, reference system, method, device, and medium. The method of setting a large capacitor at the port of a voltage reference module is eliminated. By setting a reference drive circuit at the output port of the voltage reference module, interference can be avoided by using the reference drive circuit, thereby improving the accuracy of the reference and reducing the impact of current absorption. At the same time, when selecting the first op amp in the reference drive circuit, requirements are set for the offset input voltage and input bias current, and when selecting the second op amp, requirements are set for the slew rate and bandwidth, thereby further improving the accuracy and dynamic response efficiency. The embodiments of the present application achieve high dynamic response and reduce interference through the reference drive circuit, which can greatly reduce the requirements for the reference chip, thereby greatly reducing the overall cost and reducing the difficulty of selecting the reference chip.

Description

Technical Field

[0001] The present application relates to the field of digital closed-loop control, and in particular to a reference drive circuit, a reference system, a method, a device, and a medium. Background Art

[0002] In digital closed-loop control, ADCs are required to have high-speed, high-precision acquisition capabilities, and DACs are required to have high-speed, high-precision control capabilities. This places higher demands on the reference voltages of these ADCs and DACs. Currently, these requirements are primarily met by selecting reference chips with high precision, high speed, and low temperature drift. However, reference chips that meet these requirements are typically expensive, significantly increasing overall costs. Furthermore, voltage reference modules also require high dynamic response. However, when this occurs, the ADC draws current. Related technologies employ large capacitors at their ports to provide power. However, the need to charge these capacitors in the initial stage slows the reference voltage settling time, resulting in poor initial accuracy. Furthermore, when using a single reference to provide reference for multiple ADCs and / or DACs, the varying layouts and locations of the various components, as well as their varying operating frequencies, can lead to ESR between the wiring and capacitors, which can generate noise interference across multiple frequency bands. This can easily introduce unwanted noise and reduce the accuracy of the reference. Summary of the Invention

[0003] The present application aims to propose a reference driving circuit, a reference system, a method, a device and a medium, which can achieve high dynamic response and reduce interference at a relatively low cost.

[0004] According to the first aspect of the present application, a reference driving circuit includes:

[0005] a first operational amplifier, wherein a positive input terminal of the first operational amplifier is connected to a voltage reference module, and a first capacitor is connected between a negative input terminal and an output terminal; a first filtering unit is provided at the output terminal of the first operational amplifier; an input offset voltage of the first operational amplifier is less than a preset offset voltage threshold value, and an input bias current of the first operational amplifier is less than a preset bias current threshold value, wherein the preset voltage threshold value is determined based on the amplitude of the reference voltage signal and a predetermined required accuracy, and the preset bias current threshold value is determined based on an input impedance corresponding to the voltage reference module and the required accuracy;

[0006] A second operational amplifier, wherein a positive input terminal of the second operational amplifier is connected to the output terminal of the first operational amplifier, a first resistor is connected between a negative input terminal and the negative input terminal of the first operational amplifier, the negative input terminal is connected to the output terminal, and the output terminal is used to output a reference voltage; a second filtering unit is provided at the output terminal of the second operational amplifier; a slew rate of the second operational amplifier is greater than a preset slew rate threshold value, and a bandwidth of the second operational amplifier is greater than a preset bandwidth threshold value, the preset slew rate threshold value is determined according to the amplitude of the reference voltage signal and a predetermined required sampling rate, and the preset bandwidth threshold value is determined according to the required sampling rate.

[0007] A reference system according to an embodiment of the second aspect of the present application is applied to a digital closed-loop control circuit, the digital closed-loop control circuit comprising a main control unit, N DAC units, M ADC units, and N execution units, wherein the N DAC units are all connected to the main control unit and are used to drive the N execution units to adjust the working state of a controlled object, and the M ADC units are all connected to the main control unit and are used to collect operating data of the controlled object;

[0008] The reference system includes:

[0009] As in the above-mentioned reference driving circuit, the reference driving circuit outputs M+N reference voltages through the plurality of second operational amplifiers, and the M+N reference voltages are respectively connected to the N DAC units and the M ADC units, thereby providing reference voltages for the N DAC units and the M ADC units;

[0010] a housing, disposed on the circuit board and used to seal the area where the reference drive circuit is located;

[0011] The temperature control unit is used to adjust the temperature inside the shell so that the temperature inside the shell is maintained within a preset operating temperature range.

[0012] According to a third aspect of the present application, a reference system control method is applied to the reference system described above. The reference system control method includes:

[0013] Obtaining the real-time temperature collected by the temperature sensor;

[0014] According to the real-time temperature and the preset target temperature, the heating and cooling states of the temperature control unit are adjusted so that the temperature inside the housing is maintained within a preset operating temperature range.

[0015] According to a fourth aspect of the present application, a reference system control device is applied to the reference system described above, and the reference system control device includes:

[0016] A temperature acquisition unit, used to obtain the real-time temperature collected by the temperature sensor;

[0017] The temperature adjustment unit is used to adjust the heating and cooling states of the temperature control unit according to the real-time temperature and the preset target temperature, so that the temperature inside the shell is maintained within the preset operating temperature range.

[0018] According to the computer-readable storage medium of the fifth embodiment of the present application, computer-executable instructions are stored, and the computer-executable instructions are used to execute the reference system control method as described in the third embodiment above.

[0019] The reference drive circuit, reference system, method, device, and medium of the embodiments of the present application eliminate the need for large capacitors at the ports of the voltage reference module. By providing a reference drive circuit at the output port of the voltage reference module, interference can be avoided by utilizing the reference drive circuit, thereby improving the accuracy of the reference and reducing the impact of current absorption. At the same time, when selecting the first op amp in the reference drive circuit, requirements are set for the offset input voltage and input bias current, and when selecting the second op amp, requirements are set for the slew rate and bandwidth, thereby further improving accuracy and dynamic response efficiency. The embodiments of the present application achieve high dynamic response and reduce interference through the reference drive circuit, which can greatly reduce the requirements for the reference chip, thereby greatly reducing overall costs and reducing the difficulty of selecting the reference chip.

[0020] Other features and advantages of the present application will be set forth in the following description, and in part will be apparent from the description, or may be learned by practicing the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0022] Figure 1 A circuit diagram of a reference driving circuit provided in an embodiment of the present application;

[0023] Figure 2 A schematic diagram of a reference driving circuit with multiple reference voltage outputs provided in an embodiment of the present application;

[0024] Figure 3 A circuit diagram of a digital closed-loop control circuit provided in an embodiment of the present application;

[0025] Figure 4 A circuit diagram of a temperature control unit provided in an embodiment of the present application;

[0026] Figure 5 This is a flowchart of a reference system control method provided in an embodiment of the present application.

[0027] Reference numerals:

[0028] A first operational amplifier 110, a voltage reference module 120, a second operational amplifier 130, a first filtering unit 140, a second filtering unit 150, a voltage divider unit 160, a main control unit 210, a DAC unit 220, an ADC unit 230, an execution unit 240, a control object 250, a semiconductor temperature control device 310, a temperature sensor 320, and a temperature controller 330. DETAILED DESCRIPTION

[0029] The following describes in detail embodiments of the present application. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application and are not to be construed as limiting the present application.

[0030] In the description of this application, if there is a description of first, second, etc., it is only for the purpose of distinguishing technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0031] In the description of this application, it should be understood that descriptions involving orientation, such as the orientation or positional relationship indicated by up, down, etc., are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application.

[0032] In the description of this application, it should be noted that, unless otherwise clearly defined, terms such as setting, installing, and connecting should be understood in a broad sense, and technical personnel in the relevant technical field can reasonably determine the specific meaning of the above terms in this application based on the specific content of the technical solution.

[0033] The technical solution of the present application will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the embodiments described below are only part of the embodiments of the present application, not all of the embodiments.

[0034] See also Figure 1 、 Figure 2 As shown, an embodiment of the present application provides a benchmark system, which includes:

[0035] A first operational amplifier 110 has a positive input terminal connected to a voltage reference module 120, and a first capacitor C1 connected between a negative input terminal and an output terminal. A first filtering unit 140 is provided at the output terminal of the first operational amplifier 110. The input offset voltage of the first operational amplifier 110 is less than a preset offset voltage threshold value, and the input bias current of the first operational amplifier 110 is less than a preset bias current threshold value. The preset voltage threshold value is determined based on the amplitude of the reference voltage signal and a predetermined required accuracy. The preset bias current threshold value is determined based on the input impedance corresponding to the voltage reference module 120 and the required accuracy.

[0036] The second operational amplifier 130 has a positive input terminal connected to the output terminal of the first operational amplifier 110, a first resistor R2 is connected between the negative input terminal and the negative input terminal of the first operational amplifier 110, and the negative input terminal is connected to the output terminal, which is used to output a reference voltage; the output terminal of the second operational amplifier 130 is provided with a second filtering unit 150; the slew rate of the second operational amplifier 130 is greater than a preset slew rate threshold value, and the bandwidth of the second operational amplifier 130 is greater than a preset bandwidth threshold value, the preset slew rate threshold value is determined based on the amplitude of the reference voltage signal and a predetermined required sampling rate, and the preset bandwidth threshold value is determined based on the required sampling rate.

[0037] In the embodiment of the present application, the method of setting a large capacitor at the port of the voltage reference module 120 is eliminated. By setting a reference drive circuit at the output port of the voltage reference module 120, the reference drive circuit can be used to avoid interference, thereby improving the accuracy of the reference and reducing the impact of current absorption. At the same time, when selecting the first op amp 110 in the reference drive circuit, requirements are set for offset input voltage and input bias current, and when selecting the second op amp 130, requirements are set for slew rate and bandwidth, thereby further improving accuracy and dynamic response efficiency. In the embodiment of the present application, high dynamic response and reduced interference are achieved through the reference drive circuit, which can greatly reduce the requirements for the reference chip, thereby greatly reducing the overall cost and reducing the difficulty of selecting the reference chip.

[0038] The first operational amplifier 110 is a high-precision operational amplifier, and its input offset voltage is less than a preset offset voltage threshold value, and its input bias current is less than a preset bias current threshold value, which can effectively improve the accuracy of the reference.

[0039] The preset offset voltage threshold is determined based on the amplitude of the reference voltage signal and a predetermined required accuracy. For example, if the amplitude of the reference voltage signal at the output of the voltage reference unit is 5V and the required accuracy is 1 / 100,000, the preset offset voltage threshold cannot be greater than 50uV. In actual applications, the reference voltage signal amplitude and required accuracy can be adaptively adjusted based on actual needs.

[0040] The preset bias current threshold is determined based on the input impedance and required accuracy of the voltage reference module 120. For example, if the 5V reference input impedance is 1K and the required accuracy is 1 part per 100,000, the preset bias current threshold cannot be greater than 50nA. In actual applications, the input impedance and required accuracy can be adaptively adjusted based on actual needs.

[0041] The first operational amplifier 110 may be AD8358, with a preset offset voltage threshold value of 5uV and a preset bias current threshold value of 15pA.

[0042] The above-mentioned second operational amplifier 130 is a high-speed operational amplifier, and its slew rate is greater than the preset slew rate threshold value, and its bandwidth is greater than the preset bandwidth threshold value. It can meet the fast response requirements of devices such as high-speed ADCs. In addition, since the operational amplifier device is strongly driven, it can ensure that the reference voltage is accurate under any circumstances and will not be absorbed due to high-speed response, resulting in errors. It is understandable that due to the different principles, energy absorption will not occur due to the simultaneous connection of multiple high-speed ADCs and other devices.

[0043] The preset slew rate threshold is determined by the amplitude of the reference voltage signal and the predetermined required sampling rate. The preset bandwidth threshold is also determined by the required sampling rate. For example, if the backend ADC has a 1M sampling rate, the preset bandwidth threshold must be at least 10M. If the reference voltage is 5V, the rise time must not be less than 0.5us, so the preset slew rate threshold must be at least 10V / us.

[0044] The second op amp 130 can be THS4281DBV, with a preset bandwidth threshold of 95M and a preset slew rate threshold of 35V / us. In the embodiment of the present application, the AD8358 is used as the first op amp 110 and the THS4281DBV is used as the second op amp 130, which is sufficient to meet the application requirements in most scenarios.

[0045] The first filtering unit 140 can filter out interference caused by the operational amplifier power supply.

[0046] The first capacitor C1 can speed up the transfer time of the first operational amplifier 110 .

[0047] The second filtering unit 150 is used for filtering between high-speed devices.

[0048] refer to Figure 2 In some embodiments, there are multiple second op amps 130; the reference driving circuit further includes a voltage divider unit 160 connected between the output terminal of the first op amp 110 and the ground line, and the voltage divider unit 160 has a number of voltage divider output terminals that is the same as the number of the second op amps 130; the input terminals of the multiple second op amps 130 units are all connected to the multiple voltage divider output terminals of the voltage divider unit 160.

[0049] In this embodiment, it is considered that a voltage reference module 120 needs to provide a reference voltage to multiple devices with different reference voltage requirements (such as Figure 2 As shown in FIG1 , a voltage dividing unit 160 is further added, so that the voltage dividing unit 160 can be used to divide the output of the first operational amplifier 110, and multiple reference voltages can be output through multiple second operational amplifiers 130 to meet the needs.

[0050] In some embodiments, there are multiple first filtering units 140 and the number is the same as the number of second operational amplifiers 130 . The positive input terminal of each second operational amplifier 130 is connected to the corresponding voltage divider output terminal through the corresponding first filtering unit 140 .

[0051] In this embodiment, a first filtering unit 140 is provided at the input side of each second operational amplifier 130 for filtering to improve the stability of the reference voltage.

[0052] In some embodiments, only one first filtering unit 140 is provided, which is disposed between the output terminal of the first operational amplifier 110 and the voltage divider 160, so that multiple second operational amplifiers 130 can be filtered by one first filtering unit 140. This can reduce circuit complexity and cost to a certain extent.

[0053] In some embodiments, reference Figure 1 , each first filtering unit 140 includes:

[0054] The second resistor R1 is connected between the positive input terminal of the corresponding second operational amplifier 130 and the corresponding voltage divider output terminal;

[0055] The second capacitor C2 is connected between the positive input terminal of the corresponding second operational amplifier 130 and the ground.

[0056] In this embodiment, the second resistor R1 and the second capacitor C2 form an RC filter unit, thereby achieving the purpose of reducing interference caused by the operational amplifier power supply.

[0057] In some embodiments, reference Figure 1 , each second filtering unit 150 includes:

[0058] A third resistor R3, one end of which is connected to the output end of the corresponding second operational amplifier 130;

[0059] The third capacitor C3 has one end connected to the other end of the third resistor R3 and the other end connected to the ground.

[0060] In this embodiment, the third resistor R3 and the third capacitor C3 are used to filter the output of the second op amp 130. Furthermore, the third resistor R3 can, to a certain extent, prevent the op amp from driving a capacitive load and causing self-excitation. Furthermore, the third resistor R3 is provided on a branch circuit, rather than on the main output circuit of the second op amp 130, to prevent the third resistor R3 from reducing the op amp's strong drive capability.

[0061] See also Figure 4 As shown, Figure 4 : is a system diagram of a reference system provided by one embodiment of the present application, which is applied to a digital closed-loop control circuit and includes:

[0062] As described above, the reference driving circuit outputs M+N reference voltages through the plurality of second operational amplifiers 130. The M+N reference voltages are respectively connected to the N DAC units 220 and the M ADC units 230, thereby providing reference voltages for the N DAC units 220 and the M ADC units 230.

[0063] A housing is provided on the circuit board and is used to seal the area where the reference drive circuit is located;

[0064] The temperature control unit is used to adjust the temperature inside the shell so that the temperature inside the shell is maintained within a preset operating temperature range.

[0065] In the embodiment of the present application, a single reference drive circuit can be used to power multiple devices with different reference voltage requirements, thereby meeting the reference voltage requirements of multiple ADC units 230 and DCA units. Moreover, because the reference drive circuit itself can meet the requirements of high-speed response and anti-interference, the high speed, accuracy, and stability of the operation of the entire digital closed-loop control circuit can also be improved. In addition, the use of a temperature control unit can make the reference drive circuit operate within a suitable operating temperature, reduce the possibility of temperature drift in the reference drive circuit, and further improve the high speed, accuracy, and stability of the operation of the digital closed-loop control circuit.

[0066] In order to better describe the reference system of the embodiment of the present application, a brief description of the applied digital closed-loop control circuit is first given here. The digital closed-loop control circuit includes a main control unit 210, N DAC units 220, M ADC units 230, and N execution units 240. The N DAC units 220 are all connected to the main control unit 210 to drive the N execution units 240 to adjust the working state of the control object 250. The M ADC units 230 are all connected to the main control unit 210 to collect operating data of the control object 250. For example, Figure 2 The digital closed-loop control circuit shown in FIG includes a DAC unit and an ADC unit.

[0067] The DAC unit 220 and the ADC unit 230 may both have requirements for high-speed response and anti-interference reference voltage.

[0068] The execution unit 240 can be any device adjusted by the DAC unit 220, such as a controllable switch, a MOS tube, or even a data receiving unit. Figure 3 , Figure 3 The executed device is a MOS tube, which completes the on-off control of the power supply under test (ie, the control object 250).

[0069] The reference drive circuit outputs M+N reference voltages via a voltage divider unit 160 and multiple second op amps 130, thereby providing reference voltages to the M ADC units 230 and the N DAC units 220. It should be noted that when the reference voltages of the M ADC units 230 and the N DAC units 220 are all different, the voltage divider unit 160 and the M+N second op amps 130 can be used to set M+N different reference voltages. When the reference voltages of the M ADC units 230 and the N DAC units 220 share the same reference voltage, the number of second op amps 130 can be reduced accordingly. That is, devices requiring the same reference voltage only need to output through a single second op amp 130.

[0070] The above-mentioned shell is intended to seal the reference drive circuit area, so that the reference drive circuit area forms a sealed space, which is convenient for subsequent constant temperature control.

[0071] The temperature control unit can be operated independently to control the temperature in the sealed space of the housing so that the temperature in the sealed space is constant. In some embodiments, in order to avoid frequent adjustments, a PID control method can be used to achieve the temperature control process.

[0072] In some embodiments, reference Figure 4 , the temperature control unit includes:

[0073] The semiconductor temperature control device 310 is provided on the housing, and a temperature control surface of the semiconductor temperature control device 310 is located inside the housing;

[0074] A first MOS transistor Q1, having a source connected to the first connection terminal of the semiconductor temperature control device 310 and a drain connected to the working power supply;

[0075] The second MOS transistor Q2 has a drain connected to the first connection terminal of the semiconductor temperature control device 310 and a source connected to the ground line;

[0076] The third MOS transistor Q3 has a source connected to the second connection terminal of the semiconductor temperature control device 310 and a drain connected to the working power supply;

[0077] The fourth MOS transistor Q4 has a drain connected to the second connection terminal of the semiconductor temperature control device 310 and a source connected to the ground line;

[0078] A temperature sensor 320 is used to obtain the real-time temperature inside the housing;

[0079] The temperature controller 330 is connected to the temperature sensor 320, the gates of the first MOS transistor Q1, the gates of the second MOS transistor Q2, the gates of the third MOS transistor Q3, and the gates of the fourth MOS transistor Q4, respectively, and is used to control the conduction states of the first MOS transistor Q1, the second MOS transistor Q2, the third MOS transistor Q3, and the fourth MOS transistor Q4 to adjust the pressurization states of the first connection end and the second connection end of the semiconductor temperature control device 310, thereby achieving heating and cooling control of the temperature control surface of the semiconductor temperature control device 310 located within the housing, so that the temperature within the housing is maintained within a preset operating temperature range.

[0080] The semiconductor temperature control device 310, i.e., the TEC device, generates heat on one side inside the shell when positive pressure is applied, and cools when negative pressure is applied. Based on this principle, the sealed space inside the shell can be heated and cooled, helping to achieve constant temperature control.

[0081] The first to fourth MOS transistors Q1 to Q4 can be controlled to be on and off based on the PWM control signal output by the temperature controller 330, thereby achieving forward and reverse pressurization control of the semiconductor temperature control device 310. The pressurization effect can be changed by changing the duty cycle of the PWM control signal, thereby changing the heating and cooling power.

[0082] The temperature sensor 320 may be an NTC resistor.

[0083] The temperature controller 330 has relatively simple functions and can adopt a low-performance, low-cost single-chip microcomputer, such as an 8051 single-chip microcomputer. Other types of single-chip microcomputers, DSP or ARM can also be selected according to needs.

[0084] See also Figure 5 As shown, Figure 5 : is a flowchart of a reference system control method provided by an embodiment of the present application, the reference system control method comprising:

[0085] Acquire the real-time temperature collected by the temperature sensor 320;

[0086] According to the real-time temperature and the preset target temperature, the heating and cooling states of the temperature control unit are adjusted so that the temperature inside the shell is maintained within the preset operating temperature range.

[0087] The reference system control method in the embodiment of the present application is implemented based on the above-mentioned reference system. The reference system has been described in detail above and will not be repeated here.

[0088] In an embodiment of the present application, by collecting the real-time temperature of the sealed space in the shell in real time, the heating and cooling states of the temperature control unit can be controlled based on the pre-set target temperature, thereby completing the adjustment of the temperature in the sealed space of the shell, so that the real-time temperature can be maintained near the target temperature, that is, maintained within the preset operating temperature range, thereby effectively controlling the temperature drift of the reference drive circuit.

[0089] The above control process with the target temperature as the target and the real-time temperature as the feedback can be implemented based on the PID control method, and the difference between the real-time temperature and the target temperature is used as a feedback parameter in the control process, so that the real-time temperature can fluctuate around the target temperature.

[0090] The above-mentioned target temperature can be understood as a value within the preset operating temperature range, can be understood as a value in the middle area of ​​the preset operating temperature range, or can even be directly understood as the middle value.

[0091] In some embodiments, reference Figure 4 ,The temperature control unit includes:

[0092] The semiconductor temperature control device 310 is provided on the housing, and a temperature control surface of the semiconductor temperature control device 310 is located inside the housing;

[0093] A first MOS transistor Q1, having a source connected to the first connection terminal of the semiconductor temperature control device 310 and a drain connected to the working power supply;

[0094] The second MOS transistor Q2 has a drain connected to the first connection terminal of the semiconductor temperature control device 310 and a source connected to the ground line;

[0095] The third MOS transistor Q3 has a source connected to the second connection terminal of the semiconductor temperature control device 310 and a drain connected to the working power supply;

[0096] The fourth MOS transistor Q4 has a drain connected to the second connection terminal of the semiconductor temperature control device 310 and a source connected to the ground line;

[0097] A temperature sensor 320 is used to obtain the real-time temperature inside the housing;

[0098] The temperature controller 330 is connected to the temperature sensor 320, the gate of the first MOS transistor Q1, the gate of the second MOS transistor Q2, the gate of the third MOS transistor Q3, and the gate of the fourth MOS transistor Q4, respectively, and is used to control the conduction state of the first MOS transistor Q1, the second MOS transistor Q2, the third MOS transistor Q3, and the fourth MOS transistor Q4 to adjust the pressurization state of the first connection end and the second connection end of the semiconductor temperature control device 310, thereby achieving heating and cooling control of the temperature control surface of the semiconductor temperature control device 310 located within the housing, so that the temperature within the housing is maintained within a preset operating temperature range;

[0099] The above adjustment of the heating and cooling status of the temperature control unit according to the real-time temperature and the preset target temperature includes:

[0100] Generate a first PWM control signal, a second PWM control signal, a third PWM control signal, and a fourth PWM control signal according to the real-time temperature and the preset target temperature;

[0101] The on / off states of the first MOS transistor Q1, the second MOS transistor Q2, the third MOS transistor Q3, and the fourth MOS transistor Q4 are adjusted accordingly according to the first PWM control signal, the second PWM control signal, the third PWM control signal, and the fourth PWM control signal, so as to adjust the pressurization state of the semiconductor temperature control device 310 so that the temperature inside the housing is maintained within a preset operating temperature range.

[0102] The above-mentioned semiconductor temperature control device 310 is a TEC device. When positive pressure is applied, the temperature control surface located in the shell will heat up, and when reverse pressure is applied, it will cool down. Based on this principle, the sealed space in the shell can be heated and cooled, helping to achieve constant temperature control.

[0103] The first to fourth MOS transistors Q1 to Q4 can be controlled to be on and off based on the PWM control signal output by the temperature controller 330, thereby achieving forward and reverse pressurization control of the semiconductor temperature control device 310. The pressurization effect can be changed by changing the duty cycle of the PWM control signal, thereby changing the heating and cooling power.

[0104] The temperature sensor 320 may be an NTC resistor.

[0105] The temperature controller 330 has relatively simple functions and can adopt a low-performance, low-cost single-chip microcomputer, such as an 8051 single-chip microcomputer. Other types of single-chip microcomputers, DSP or ARM can also be selected according to needs.

[0106] In this embodiment, the pressurization direction and time of the semiconductor temperature control device 310 are adjusted based on the MOS tube and the PWM signal, thereby realizing the control of the heating and cooling of the temperature control surface of the semiconductor temperature control device 310 located in the shell, thereby realizing constant temperature control of the sealed space, effectively reducing the temperature drift of the reference drive circuit, and improving the stability of the reference voltage finally provided.

[0107] The reference system control method provided in the embodiment of the present application can be executed by a reference system control device. In the embodiment of the present application, the reference system control device provided in the embodiment of the present application is described by taking the reference system control device executing the reference system control method as an example.

[0108] The present application also provides a reference system control device, the reference system control device comprising:

[0109] A temperature acquisition unit, used to obtain the real-time temperature collected by the temperature sensor 320;

[0110] The temperature adjustment unit is used to adjust the heating and cooling states of the temperature control unit according to the real-time temperature and the preset target temperature, so that the temperature inside the shell is maintained within the preset operating temperature range.

[0111] The reference system control device in the embodiments of the present application can be an electronic device or a component of an electronic device, such as an integrated circuit or chip. The electronic device can be a terminal or other device other than a terminal. For example, the electronic device can be a mobile phone, a tablet computer, a laptop computer, a PDA, an in-vehicle electronic device, a mobile internet device (MID), an augmented reality (AR) / virtual reality (VR) device, a robot, a wearable device, an ultra-mobile personal computer (UMPC), a netbook, or a personal digital assistant (PDA). It can also be a server, a network attached storage (NAS), a personal computer (PC), a television (TV), a teller machine (ATM), or a self-service machine, etc., and the embodiments of the present application are not specifically limited thereto.

[0112] The embodiment of the present application also provides a computer-readable storage medium, which stores computer-executable instructions. The computer-executable instructions are executed by a processor or a control module (110), so that the processor can execute the reference system control method in the above embodiment, for example, execute the method described above.

[0113] It should be understood that the present application is not limited to the specific configurations and processes described above and illustrated in the figures. For the sake of brevity, a detailed description of known methods is omitted here. In the above embodiments, several specific steps are described and illustrated as examples. However, the method process of the present application is not limited to the specific steps described and illustrated. Those skilled in the art can make various changes, modifications, and additions, or change the order of the steps after understanding the spirit of the present application.

[0114] The functional blocks shown in the above block diagrams can be implemented as hardware, software, firmware, or a combination thereof. When implemented in hardware, they can be, for example, electronic circuits, application-specific integrated circuits (ASICs), appropriate firmware, plug-ins, function cards, and the like. When implemented in software, the elements of this application are programs or code segments used to perform the required tasks. Programs or code segments can be stored in a machine-readable medium or transmitted over a transmission medium or communication link via a data signal carried in a carrier wave. "Machine-readable medium" can include any medium capable of storing or transmitting information. Examples of machine-readable media include electronic circuits, semiconductor memory devices, ROMs, flash memory, erasable ROMs (EROMs), floppy disks, CD-ROMs, optical disks, hard disks, fiber optic media, radio frequency (RF) links, and the like. Code segments can be downloaded via a computer network such as the Internet or an intranet.

[0115] It should also be noted that the exemplary embodiments mentioned in this application describe some methods or systems based on a series of steps or devices. However, this application is not limited to the order of the above steps. In other words, the steps can be performed in the order mentioned in the embodiments, or in a different order, or several steps can be performed simultaneously.

[0116] Aspects of the present disclosure have been described above with reference to flowcharts and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the present disclosure. It should be understood that each block in the flowcharts and / or block diagrams, as well as combinations of blocks in the flowcharts and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device to produce a machine such that execution of these instructions by the processor of the computer or other programmable data processing device enables the implementation of the functions / actions specified in one or more blocks in the flowcharts and / or block diagrams. Such a processor can be a general-purpose processor, a special-purpose processor, a special application processor, or a field programmable logic circuit. It should also be understood that each block in the block diagrams and / or flowcharts, as well as combinations of blocks in the block diagrams and / or flowcharts, can also be implemented by dedicated hardware that performs the specified functions or actions, or by a combination of dedicated hardware and computer instructions.

[0117] The above is only a specific implementation method of the present application. Those skilled in the art can clearly understand that for the convenience and brevity of description, the specific working processes of the systems, modules and units described above can refer to the corresponding processes in the aforementioned method embodiments, and will not be repeated here. It should be understood that the scope of protection of the present application is not limited to this. Any technician familiar with this technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed in this application, and these modifications or replacements should be included in the scope of protection of this application.

Claims

1. A reference driving circuit, characterized in that: include: A first operational amplifier, wherein the positive input terminal thereof is connected to the voltage reference module, and a first capacitor is connected between the negative input terminal and the output terminal; The output end of the first operational amplifier is provided with a first filtering unit; The input offset voltage of the first operational amplifier is less than a preset offset voltage threshold value, and the input bias current of the first operational amplifier is less than a preset bias current threshold value, wherein the preset offset voltage threshold value is determined according to the amplitude of the reference voltage signal and a predetermined required accuracy, and the preset bias current threshold value is determined according to the input impedance corresponding to the voltage reference module and the required accuracy; a second operational amplifier, having a positive input terminal connected to the output terminal of the first operational amplifier, a first resistor connected between a negative input terminal and the negative input terminal of the first operational amplifier, a negative input terminal connected to an output terminal, and an output terminal for outputting a reference voltage; A second filtering unit is provided at the output end of the second operational amplifier; the slew rate of the second operational amplifier is greater than a preset slew rate threshold value, and the bandwidth of the second operational amplifier is greater than a preset bandwidth threshold value, the preset slew rate threshold value is determined according to the amplitude of the reference voltage signal and a predetermined required sampling rate, and the preset bandwidth threshold value is determined according to the required sampling rate.

2. The reference driving circuit according to claim 1, wherein: There are multiple second op amps; the reference drive circuit also includes a voltage divider unit connected between the output end of the first op amp and the ground line, and the voltage divider unit has a voltage divider output end with the same number as the second op amps; the input ends of multiple second op amp units are correspondingly connected to the multiple voltage divider output ends of the voltage divider unit.

3. The reference driving circuit according to claim 2, wherein: There are multiple first filtering units, and the number is consistent with the number of second operational amplifiers. The positive input terminal of each second operational amplifier is connected to the corresponding voltage divider output terminal through the corresponding first filtering unit.

4. The reference driving circuit according to claim 2, wherein: Each of the first filtering units includes: A second resistor is connected between the positive input terminal of the second operational amplifier and the voltage divider output terminal; The second capacitor is connected between the positive input terminal corresponding to the second operational amplifier and the ground line.

5. The reference driving circuit according to claim 2, wherein: Each of the second filtering units includes: a third resistor, one end of which is connected to the output terminal corresponding to the second operational amplifier; A third capacitor has one end connected to the other end of the third resistor and the other end connected to the ground line.

6. A reference system, characterized in that Applicable to a digital closed-loop control circuit, the digital closed-loop control circuit includes a main control unit, N DAC units, M ADC units, and N execution units, the N DAC units are all connected to the main control unit and used to drive the N execution units to adjust the working state of the controlled object, and the M ADC units are all connected to the main control unit and used to collect operating data of the controlled object; The reference system includes: The reference driving circuit according to any one of claims 2 to 5, wherein the reference driving circuit outputs M+N reference voltages through the plurality of second operational amplifiers, and the M+N reference voltages are respectively connected to the N DAC units and the M ADC units, thereby providing reference voltages for the N DAC units and the M ADC units. A housing, disposed on the circuit board, for sealing the area where the reference drive circuit is located; The temperature control unit is used to adjust the temperature inside the shell so that the temperature inside the shell is maintained within a preset operating temperature range.

7. The reference system according to claim 6, characterized in that The temperature control unit includes: A semiconductor temperature control device is provided on the housing, and a temperature control surface of the semiconductor temperature control device is located inside the housing; a first MOS transistor, whose source is connected to the first connection end of the semiconductor temperature control device and whose drain is connected to the working power supply; a second MOS transistor, a drain connected to the first connection end of the semiconductor temperature control device, and a source connected to the ground line; a third MOS transistor, whose source is connected to the second connection end of the semiconductor temperature control device and whose drain is connected to the working power supply; a fourth MOS transistor, having a drain connected to the second connection end of the semiconductor temperature control device and a source connected to the ground line; A temperature sensor, used to obtain the real-time temperature inside the housing; a temperature controller, connected to the temperature sensor, the gate of the first MOS transistor, the gate of the second MOS transistor, the gate of the third MOS transistor, and the gate of the fourth MOS transistor, respectively, and configured to control the conduction states of the first MOS transistor, the second MOS transistor, the third MOS transistor, and the fourth MOS transistor, so as to adjust the pressurization states of the first connection end and the second connection end of the semiconductor temperature control device, thereby achieving heating and cooling control of the temperature control surface of the semiconductor temperature control device located within the housing, so that the temperature within the housing is maintained within a preset operating temperature range.

8. A reference system control method, characterized in that: Applied to the reference system according to claim 6, the reference system control method comprises: Get the real-time temperature collected by the temperature sensor; According to the real-time temperature and the preset target temperature, the heating and cooling states of the temperature control unit are adjusted so that the temperature inside the housing is maintained within a preset operating temperature range.

9. A reference system control device, characterized in that: Applied to the reference system according to claim 6, the reference system control device comprises: A temperature acquisition unit is used to obtain the real-time temperature collected by the temperature sensor; The temperature adjustment unit is used to adjust the heating and cooling states of the temperature control unit according to the real-time temperature and the preset target temperature, so that the temperature inside the shell is maintained within the preset operating temperature range.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer-executable instructions, and the computer-executable instructions are used to enable a computer to execute the reference system control method according to claim 8.

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