A reread voltage correction method, device, readable storage medium and electronic device

Abstract

The present invention discloses a reread voltage correction method, device, readable storage medium and electronic device, including: obtaining the data page type of the target data page to be reread; obtaining the corresponding target voltage offset interval according to the data page type; obtaining a reread voltage interval table, judging whether the target voltage offset interval is at the first position of the reread voltage interval table, if not, placing the target voltage offset interval at the first position of the reread voltage interval table; sequentially traversing each correction voltage in each voltage offset interval in the reread voltage interval table, and rereading the target data page to be reread according to the currently traversed correction voltage until the rereading is successful. That is, the correction voltage in the target voltage offset interval can be obtained first to perform a reread operation on the target data page to be reread, so as to more quickly traverse to the corresponding correction voltage and complete the reread operation, thereby improving the efficiency of the reread process.

Description

Technical Field

[0001] The present invention relates to the technical field of memory back-end applications, and in particular to a reread voltage correction method, device, readable storage medium and electronic equipment. Background Art

[0002] At present, mainstream flash storage products such as eMMC, UFS and other products all contain a read retry error correction mechanism. When an error that cannot be corrected by ECC (error control coding) occurs during the data reading process of a flash storage product, the Read Retry error correction mechanism finds a suitable voltage offset value for rereading and correction.

[0003] Usually in the Read Retry process, manufacturers will provide experimentally tested reread voltage offset correction values ​​and store them in the form of a matrix array. However, since the Read Retry process needs to traverse the entire array to find the appropriate voltage offset value to perform reread correction, and there are many reread operations in the process of flash storage products reading data, the reading efficiency of flash storage products is reduced. Summary of the invention

[0004] The technical problem to be solved by the present invention is to provide a reread voltage correction method, device, readable storage medium and electronic device to improve the efficiency of the Read Retry process of flash memory storage products, thereby improving the data reading efficiency and performance of the products.

[0005] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0006] A reread voltage correction method, comprising:

[0007] Get the data page type of the target data page to be reread;

[0008] Obtaining a corresponding target voltage offset interval according to the data page type;

[0009] Obtain a reread voltage interval table, determine whether the target voltage offset interval is located at the first position in the reread voltage interval table, and if not, place the target voltage offset interval at the first position in the reread voltage interval table;

[0010] Each correction voltage in each voltage offset interval in the re-read voltage interval table is traversed in sequence, and a re-read operation is performed on the target data page to be re-read according to the currently traversed correction voltage until the re-reading is successful.

[0011] In order to solve the above technical problems, another technical solution adopted by the present invention is:

[0012] A reread voltage correction device, comprising:

[0013] A first acquisition module, used to acquire the data page type of the target data page to be reread;

[0014] A second acquisition module, configured to obtain a corresponding target voltage offset interval according to the data page type;

[0015] A judgment module, used for obtaining a reread voltage interval table, judging whether the target voltage offset interval is located at the first position of the reread voltage interval table, and if not, placing the target voltage offset interval at the first position of the reread voltage interval table;

[0016] The traversal module is used to sequentially traverse each correction voltage in each voltage offset interval in the re-read voltage interval table, and perform a re-read operation on the target data page to be re-read according to the currently traversed correction voltage until the re-reading is successful.

[0017] In order to solve the above technical problems, another technical solution adopted by the present invention is:

[0018] A computer-readable storage medium stores a computer program thereon, wherein the computer program, when executed by a processor, implements the steps of the above-mentioned reread voltage correction method.

[0019] In order to solve the above technical problems, another technical solution adopted by the present invention is:

[0020] An electronic device comprises a memory, a processor and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of the above-mentioned reread voltage correction method when executing the computer program.

[0021] The beneficial effects of the present invention are as follows: by obtaining the corresponding data page type and target voltage offset interval when rereading the target data page to be reread, and adjusting the target voltage offset interval to the first position of the reread voltage interval table, so that when the target data page to be reread is reread through the reread voltage interval table, the correction voltage in the target voltage offset interval can be first obtained to perform the reread operation on the target data page to be reread. Since the correction voltage in the target voltage offset interval corresponds to the data page type of the target data page to be reread, the corresponding correction voltage can be traversed more quickly and the reread operation can be completed, thereby improving the efficiency of the reread process and improving the data reading efficiency and performance of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is a flowchart of the steps of a re-read voltage correction method in an embodiment of the present invention;

[0023] Figure 2 A schematic diagram of the sorting structure of a re-read voltage interval table in a re-read voltage correction method in an embodiment of the present invention;

[0024] Figure 3 is another step flow chart of a re-read voltage correction method according to an embodiment of the present invention;

[0025] Figure 4 is another step flow chart of a re-read voltage correction method in an embodiment of the present invention;

[0026] Figure 5 is a structural schematic diagram of a re-read voltage correction device in an embodiment of the present invention;

[0027] Figure 6 FIG. 4 is a schematic diagram of the structure of an electronic device in an embodiment of the present invention. DETAILED DESCRIPTION

[0028] In order to explain the technical content, achieved objectives and effects of the present invention in detail, the following is an explanation in combination with the implementation modes and the accompanying drawings.

[0029] The existing optimization method for the rereading process is to sort the corrected voltage found to the front of the rereading list. However, this method only advances the corrected voltage without considering the internal characteristics of various voltage values, so the improvement efficiency is low. In order to solve the above technical problems, the present invention provides a rereading voltage correction method, device, readable storage medium and electronic device, specifically:

[0030] Please refer to Figure 1 , a reread voltage correction method, comprising:

[0031] Get the data page type of the target data page to be reread;

[0032] Obtaining a corresponding target voltage offset interval according to the data page type;

[0033] Obtain a reread voltage interval table, determine whether the target voltage offset interval is located at the first position in the reread voltage interval table, and if not, place the target voltage offset interval at the first position in the reread voltage interval table;

[0034] Each correction voltage in each voltage offset interval in the re-read voltage interval table is traversed in sequence, and a re-read operation is performed on the target data page to be re-read according to the currently traversed correction voltage until the re-reading is successful.

[0035] From the above description, it can be seen that the beneficial effect of the present invention is that: by obtaining the corresponding data page type and target voltage offset interval when rereading the target data page to be reread, and adjusting the target voltage offset interval to the first position of the reread voltage interval table, so that when the target data page to be reread is reread through the reread voltage interval table, the correction voltage in the target voltage offset interval can be obtained first to perform the reread operation on the target data page to be reread. Since the correction voltage in the target voltage offset interval corresponds to the data page type of the target data page to be reread, the corresponding correction voltage can be traversed more quickly and the reread operation can be completed, thereby improving the efficiency of the reread process and improving the data reading efficiency and performance of the product.

[0036] Furthermore, the step of obtaining the re-reading voltage interval table includes:

[0037] Acquire the correction voltage corresponding to all the data page types in the memory;

[0038] Acquire a voltage offset value corresponding to the correction voltage, and classify the correction voltage into at least two groups of different voltage offset intervals according to the voltage offset value;

[0039] The voltage offset intervals are sorted to obtain the re-read voltage interval table.

[0040] From the above description, it can be seen that after obtaining the correction voltages corresponding to all data page types in the memory, the correction voltages are classified according to the voltage offset values ​​corresponding to the correction voltages to obtain different voltage offset intervals, and the connection between different data page types and voltage offset intervals is established, so that in the subsequent process, the target data page to be reread can be quickly reread based on the relationship between the data page type and the voltage offset interval.

[0041] Furthermore, the step of rereading successfully further includes:

[0042] taking the successfully reread correction voltage as a target correction voltage;

[0043] The step of obtaining the re-read voltage interval table includes:

[0044] Determine whether the data page type of the target data page to be reread is the same as the data page type of the last reread data page, and if so, obtain the target correction voltage corresponding to the last reread data page;

[0045] A reread operation is performed on the target data page to be reread according to the target correction voltage. If the reread operation is successful, the target correction voltage is placed at the first position of the corresponding voltage offset interval.

[0046] From the above description, it can be seen that by using the successfully reread correction voltage as the target correction voltage, and when the target data page to be reread is of the same data page type as the last reread data page, the target data page to be reread can be directly reread using the target correction voltage. Since most data pages of the same type are usually consistent, directly rereading the target data page to be reread using the target correction voltage can successfully reread in most cases, thereby improving the efficiency of the reread process.

[0047] Furthermore, after taking the successfully reread correction voltage as the target correction voltage, the method further includes:

[0048] It is determined whether the target correction voltage belongs to the target voltage offset interval. If so, the target correction voltage is placed at a front preset position of the voltage offset interval.

[0049] From the above description, it can be seen that when the target correction voltage belongs to the target voltage offset interval, the target correction voltage is placed at the front preset position of the voltage offset interval, that is, the correction voltage that can enable the data page to successfully complete the reread operation is adjusted and set to the front row of the target voltage offset interval, so that subsequent data pages can obtain the correction voltage faster and complete the rereading through the correction voltage, thereby improving the rereading efficiency.

[0050] Further, the determining whether the target correction voltage belongs to the target voltage offset interval further includes:

[0051] If not, obtaining a target voltage offset value corresponding to the target correction voltage;

[0052] Obtaining the voltage offset interval corresponding to the target correction voltage according to the target voltage offset value;

[0053] The target correction voltage is placed at a front preset position of the voltage offset interval.

[0054] From the above description, it can be seen that when the target correction voltage does not belong to the target voltage offset interval, the target correction voltage is placed in the front preset position of its corresponding voltage offset interval, so that when the same situation occurs in this type of data page in the subsequent process, the corresponding correction voltage can be found more quickly to complete the reread operation, thereby reducing the time to traverse the corresponding voltage offset interval.

[0055] Further, placing the target correction voltage at the first position of the corresponding voltage offset interval further includes:

[0056] The voltage offset interval corresponding to the target correction voltage is placed at the first position of the re-read voltage interval table.

[0057] From the above description, it can be seen that by placing the target correction voltage at the first position of the corresponding voltage offset interval, the voltage offset interval corresponding to the target correction voltage is also placed at the first position of the reread voltage interval table. Usually, the reread operation needs to be performed continuously on the same type of data pages, so that when the subsequent continuous reread operations are performed on the same type of data pages, the correction voltage can be preferentially obtained from the same voltage offset interval for the reread operation.

[0058] Further, the voltage offset value includes a left offset, a right offset and a random offset;

[0059] The voltage offset interval includes a left offset voltage interval, a right offset voltage interval and a chaotic offset interval;

[0060] The correction voltage with a left shift is classified into the left shift voltage interval, the correction voltage with a right shift is classified into the left shift voltage interval, and the correction voltage with a random shift is classified into the random shift voltage interval.

[0061] From the above description, it can be known that the correction voltage is divided into left offset, right offset and chaotic offset according to the voltage offset, and a left offset voltage interval, a right offset voltage interval and a chaotic offset interval are formed respectively, so that the correction voltages corresponding to different types of data pages can be effectively distinguished.

[0062] Another embodiment of the present invention provides a reread voltage correction device, comprising:

[0063] A first acquisition module, used to acquire the data page type of the target data page to be reread;

[0064] A second acquisition module, configured to obtain a corresponding target voltage offset interval according to the data page type;

[0065] A judgment module, used for obtaining a reread voltage interval table, judging whether the target voltage offset interval is located at the first position of the reread voltage interval table, and if not, placing the target voltage offset interval at the first position of the reread voltage interval table;

[0066] The traversal module is used to sequentially traverse each correction voltage in each voltage offset interval in the re-read voltage interval table, and perform a re-read operation on the target data page to be re-read according to the currently traversed correction voltage until the re-reading is successful.

[0067] Another embodiment of the present invention provides a computer-readable storage medium having a computer program stored thereon. When the computer program is executed by a processor, the computer program implements the steps of the above-mentioned reread voltage correction method.

[0068] Another embodiment of the present invention provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements each step in the above-mentioned reread voltage correction method when executing the computer program.

[0069] Embodiment 1

[0070] Please refer to Figure 1 , a reread voltage correction method, comprising:

[0071] S0. Create a retry voltage range table based on the manufacturer's built-in retry table. Specifically:

[0072] S01, obtaining the correction voltage corresponding to all the data page types in the memory; taking the eMMC memory as an example, obtaining the correction voltage value provided by the original particle manufacturer of the current eMMC;

[0073] S02, obtaining a voltage offset value corresponding to the correction voltage, and classifying the correction voltage into at least two groups of different voltage offset intervals according to the voltage offset value; wherein, for the correction voltage, the correction voltages corresponding to different data page types (page types) are all different, and the voltage offset directions are also different; the data page types are specifically divided into: SLC (Single-Level Cell, single-layer cell flash memory), each cell stores 1 bit of data; MLC (Multi-Level Cell, multi-layer cell flash memory), each cell stores 2 bits of data, including MLC lowerpage and MLC upper page; TLC (Triple-Level Cell, triple-layer cell flash memory), each cell stores 3 bits of data, including TLC lower page, TLC middle page and TLC upper page, and the specific classification method is shown in Table 1:

[0074] Table 1. Voltage offset direction of correction voltage corresponding to different data page types

[0075]

[0076] Among them, the voltage offset value includes left offset, right offset and chaotic offset, and the specific judgment method is: each row in the retry table is divided into three categories according to the voltage offset, namely left offset, right offset and chaotic offset; left offset means that all voltages in a row need to be offset to the left to be corrected; similarly, right offset means that they need to be offset to the right to be corrected; chaotic offset means that a row contains both left offset and right offset; the voltage offset interval includes left offset voltage interval, right offset voltage interval and chaotic offset interval; the correction voltage of left offset is classified into the left offset voltage interval, the correction voltage of right offset is classified into the left offset voltage interval, and the correction voltage of chaotic offset is classified into the chaotic offset voltage interval;

[0077] S03, sorting the voltage offset intervals to obtain the re-read voltage interval table; please refer to Figure 2 , such as the default order of left offset voltage interval, right offset voltage interval, and random offset voltage interval.

[0078] S1, obtaining the data page type of the target data page to be reread; if the data page type of the current target data page to be reread is SLC;

[0079] S2. Obtain a corresponding target voltage offset interval according to the data page type; if the voltage offset interval corresponding to the data page type SLC is a left offset voltage interval, then the left offset voltage interval is the target voltage offset interval;

[0080] S3, obtain the reread voltage interval table, determine whether the target voltage offset interval is at the first position in the reread voltage interval table, if not, place the target voltage offset interval at the first position in the reread voltage interval table; that is, obtain the reread voltage interval table obtained by step S0, because the default left offset voltage interval is the first position, that is, the target voltage offset interval is at the first position in the reread voltage interval table at this time, there is no need to adjust the order of each interval in the reread voltage interval table; if the target voltage offset interval is the right offset voltage interval, it is necessary to adjust the right offset voltage interval to the first position in the reread voltage interval table; at the same time, usually the reread operation needs to continuously operate on the same type of data pages, so this step can also be performed after the reread is completed.

[0081] S4, traverse each correction voltage in each voltage offset interval in the reread voltage interval table in turn, and reread the target data page to be reread according to the currently traversed correction voltage until the rereading is successful; that is, first traverse each correction voltage in the left offset voltage interval, and if no suitable correction voltage is found, then traverse each correction voltage in the right offset voltage interval and the messy offset voltage interval; for the same data page type, its particles are consistent, and in most cases, the rereading can be completed in the corresponding first interval, and in very few cases, the non-corresponding voltage offset interval needs to be traversed.

[0082] Embodiment 2

[0083] The present embodiment is different from the first embodiment in that the position of the successfully reread correction voltage is adjusted; specifically: the successfully reread correction voltage is used as the target correction voltage and is stored in the form of an array.

[0084] When rereading the next target data page to be reread, the following steps are performed:

[0085] A1. Obtain the data page type of the target data page to be reread;

[0086] A2. Determine whether the data page type of the target data page to be reread is the same as the data page type of the last reread data page. If so, obtain the target correction voltage corresponding to the last reread data page; if the data page type of the current target data page to be reread is also SLC, obtain the corresponding target correction voltage from the array.

[0087] A3. Reread the target data page to be reread according to the target correction voltage. If the reread operation is successful, the target correction voltage is placed at the first position of the corresponding voltage offset interval. That is, for a certain data page type of the same particle, according to the order (level) corresponding to the correction voltage of the last retry, it is advanced to the first position of the offset interval to which it belongs. When the same data page type is reread next time, due to the consistency of the particles, it is not necessary to traverse again to find a suitable voltage, but directly obtain the first voltage level of the interval to which it belongs, that is, the reread operation can be completed directly using this voltage. At the same time, the voltage offset interval corresponding to the target correction voltage is placed at the first position of the reread voltage interval table. Figure 3 As shown, based on the original voltage offset table, the intervals are first sorted according to the left and right offset voltages, and then according to the voltage level corresponding to the last rereading, this row is sorted in advance to the first row of the left offset voltage interval, and the entire left offset voltage interval is placed at the front of the entire table.

[0088] Wherein, in an optional implementation manner, after the rereading is successful, the method further includes: determining whether the target correction voltage belongs to the target voltage offset interval, and if so, placing the target correction voltage at a front preset position of the voltage offset interval;

[0089] If not, then obtain the target voltage offset value corresponding to the target correction voltage; obtain the voltage offset interval corresponding to the target correction voltage according to the target voltage offset value; place the target correction voltage in the front preset position of the voltage offset interval, and the front preset position may be a specific row such as the second row and the third row of the offset voltage interval; that is, although the particles of the same data page type are usually consistent, so that in most cases, the correction voltage level corresponding to the lastretry can be reread successfully, but there are a small number of data pages that cannot be corrected; therefore, it is necessary to traverse the retry table again to find a suitable voltage, and then sort the voltage level in advance to the second place, second only to the most suitable voltage level value. Similarly, subsequent voltages are sorted in this way, so as to meet the priority of forming a correction voltage value in the corresponding interval, and can efficiently deal with all situations, greatly shorten the time of the entire retry rereading process, and improve its efficiency.

[0090] Please refer to Figure 4 , is a specific application scenario in this example, specifically:

[0091] B1. Create a retry voltage interval table based on the manufacturer's built-in retry table, and classify the left, right and chaotic offset voltage intervals according to the left and right offset voltages of the correction voltage (voltage level) in the memory;

[0092] B2, obtain the data page type of the target data page to be reread, and determine whether there is a last retry in the array. If so, execute B3; if not, execute B4;

[0093] B3, re-read the correction voltage as the target correction voltage; if the re-reading succeeds, execute B31; if the re-reading fails, execute B32 or B33;

[0094] B31, advance the target correction voltage to the first row of the offset voltage interval, and advance the voltage offset interval to the first position in the re-read voltage interval table;

[0095] B32, sequentially traverse the re-read voltage interval table to find a suitable correction voltage; and advance the order of the correction voltage to the second row of the voltage offset interval;

[0096] B33, sequentially traverse the re-read voltage interval table to find a suitable correction voltage; and advance the correction voltage to the nth row of the voltage offset interval;

[0097] B4, sequentially traverse the re-read voltage interval table to find a suitable correction voltage; and advance the correction voltage to the first position of the voltage offset interval, and at the same time advance the voltage offset interval to the first position of the re-read voltage interval table. The above step of traversing the re-read voltage interval table can be implemented based on the steps in the first embodiment.

[0098] Embodiment 3

[0099] Please refer to Figure 5 , a reread voltage correction device, comprising:

[0100] A first acquisition module, used to acquire the data page type of the target data page to be reread;

[0101] A second acquisition module, configured to obtain a corresponding target voltage offset interval according to the data page type;

[0102] A judgment module, used for obtaining a reread voltage interval table, judging whether the target voltage offset interval is located at the first position of the reread voltage interval table, and if not, placing the target voltage offset interval at the first position of the reread voltage interval table;

[0103] The traversal module is used to sequentially traverse each correction voltage in each voltage offset interval in the re-read voltage interval table, and perform a re-read operation on the target data page to be re-read according to the currently traversed correction voltage until the re-reading is successful.

[0104] Embodiment 4

[0105] A computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the computer program implements the steps of a reread voltage correction method as described in the first and second embodiments.

[0106] Embodiment 5

[0107] Please refer to Figure 6 , an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the computer program, each step in a reread voltage correction method as described in Embodiments 1 and 2 is implemented.

[0108] In summary, the present invention provides a reread voltage correction method, device, readable storage medium and electronic device, which obtains the corresponding data page type and target voltage offset interval when rereading the target data page to be reread, and adjusts the target voltage offset interval to the first position of the reread voltage interval table, so that when the target data page to be reread is reread through the reread voltage interval table, the correction voltage in the target voltage offset interval can be first obtained to perform the reread operation on the target data page to be reread. Since the correction voltage in the target voltage offset interval corresponds to the data page type of the target data page to be reread, the corresponding correction voltage can be traversed more quickly and the reread operation can be completed, thereby improving the efficiency of the reread process and improving the data reading efficiency and performance of the product.

[0109] In the above embodiments provided in the present application, it should be understood that the disclosed methods, devices, computer-readable storage media, and electronic devices can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of the modules is only a logical function division. There may be other division methods in actual implementation, such as multiple components or modules can be combined or integrated into another device, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or components or modules, which can be electrical, mechanical or other forms.

[0110] The components described as separate components may or may not be physically separated, and the components shown as components may or may not be physical modules, that is, they may be located in one place or distributed on multiple network modules. Some or all of the components may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0111] In addition, each functional module in each embodiment of the present invention may be integrated into one processing module, or each component may exist physically separately, or two or more modules may be integrated into one module. The above integrated modules may be implemented in the form of hardware or in the form of software functional modules.

[0112] If the integrated module is implemented in the form of a software function module and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution can be embodied in the form of a software product. The computer software product is stored in a storage medium, including several instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk, etc. Various media that can store program codes.

[0113] It should be noted that, for the convenience of description, the aforementioned method embodiments are all described as a series of action combinations, but those skilled in the art should be aware that the present invention is not limited by the described action sequence, because according to the present invention, certain steps can be performed in other sequences or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all preferred embodiments, and the actions and modules involved are not necessarily required by the present invention.

[0114] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0115] The above descriptions are merely embodiments of the present invention and are not intended to limit the patent scope of the present invention. Any equivalent transformations made using the contents of the present invention's specification and drawings, or directly or indirectly applied in related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A reread voltage correction method, characterized in that: include: Get the data page type of the target data page to be reread; Obtaining a corresponding target voltage offset interval according to the data page type; the voltage offset interval includes a left offset voltage interval, a right offset voltage interval and a chaotic offset voltage interval; Obtain a reread voltage interval table, determine whether the target voltage offset interval is located at the first position in the reread voltage interval table, and if not, place the target voltage offset interval at the first position in the reread voltage interval table; traversing each correction voltage in each voltage offset interval in the re-read voltage interval table in sequence, and performing a re-read operation on the target data page to be re-read according to the currently traversed correction voltage until the re-reading is successful; The step of obtaining the re-read voltage interval table includes: Acquire the correction voltage corresponding to all the data page types in the memory; Acquire a voltage offset value corresponding to the correction voltage, and classify the correction voltage into at least two groups of different voltage offset intervals according to the voltage offset value; the voltage offset value includes a left offset, a right offset, and a random offset; The voltage offset intervals are sorted to obtain the re-read voltage interval table.

2. A reread voltage correction method according to claim 1, characterized in that: The process until the rereading is successful also includes: taking the successfully reread correction voltage as a target correction voltage; The step of obtaining the re-read voltage interval table includes: Determine whether the data page type of the target data page to be reread is the same as the data page type of the last reread data page, and if so, obtain the target correction voltage corresponding to the last reread data page; A reread operation is performed on the target data page to be reread according to the target correction voltage. If the reread operation is successful, the target correction voltage is placed at the first position of the corresponding voltage offset interval.

3. A reread voltage correction method according to claim 2, characterized in that: After taking the successfully reread correction voltage as the target correction voltage, the following step further comprises: It is determined whether the target correction voltage belongs to the target voltage offset interval. If so, the target correction voltage is placed at a front preset position of the voltage offset interval.

4. A reread voltage correction method according to claim 3, characterized in that: The determining whether the target correction voltage belongs to the target voltage offset interval further includes: If not, obtaining a target voltage offset value corresponding to the target correction voltage; Obtaining the voltage offset interval corresponding to the target correction voltage according to the target voltage offset value; The target correction voltage is placed at a front preset position of the voltage offset interval.

5. A reread voltage correction method according to claim 2, characterized in that: Placing the target correction voltage at the first position of the corresponding voltage offset interval further includes: The voltage offset interval corresponding to the target correction voltage is placed at the first position of the re-read voltage interval table.

6. A reread voltage correction method according to claim 2, characterized in that: The correction voltage with a left shift is classified into the left shift voltage interval, the correction voltage with a right shift is classified into the right shift voltage interval, and the correction voltage with a random shift is classified into the random shift voltage interval.

7. A reread voltage correction device, characterized in that: include: A first acquisition module, used to acquire the data page type of the target data page to be reread; A second acquisition module is used to obtain a corresponding target voltage offset interval according to the data page type; the voltage offset interval includes a left offset voltage interval, a right offset voltage interval and a chaotic offset voltage interval; A judgment module, used for obtaining a reread voltage interval table, judging whether the target voltage offset interval is located at the first position of the reread voltage interval table, and if not, placing the target voltage offset interval at the first position of the reread voltage interval table; A traversal module, used for traversing each correction voltage in each voltage offset interval in the re-read voltage interval table in turn, and performing a re-read operation on the target data page to be re-read according to the currently traversed correction voltage until the re-reading is successful; The step of obtaining the re-read voltage interval table includes: Acquire the correction voltage corresponding to all the data page types in the memory; Acquire a voltage offset value corresponding to the correction voltage, and classify the correction voltage into at least two groups of different voltage offset intervals according to the voltage offset value; the voltage offset value includes a left offset, a right offset, and a random offset; The voltage offset intervals are sorted to obtain the re-read voltage interval table.

8. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, each step of a reread voltage correction method as described in any one of claims 1 to 6 is implemented.

9. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the computer program, the processor implements the steps of the reread voltage correction method as described in any one of claims 1 to 6.

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