Ion trap fabrication system and method of fabrication

Abstract

The application discloses a preparation system of an ion trap, which comprises an ultrafast laser direct writing system, a chemical etching device, a high-temperature annealing device and a film coating device. The ultrafast laser direct writing system modifies a target region of an ion trap preparation substrate, the chemical etching device removes the modified target region of the ion trap preparation substrate to obtain a groove structure of the ion trap, the high-temperature annealing device performs high-temperature annealing on the ion trap preparation substrate to realize smooth processing of the surface of the groove structure of the ion trap, and the film coating device performs film coating on the surface of the ion trap preparation substrate. The technical scheme of the application can better improve the processing precision of the ion trap, thereby improving the overall performance of the ion trap.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of ion trap processing, and particularly relates to a preparation system of an ion trap and a preparation method. BACKGROUND

[0002] An ion trap is a device that uses electric fields to trap, store and manipulate ions. Traditional ion traps, such as knife-edge traps, quadrupole ion traps and ion trap chips, usually use semiconductor processes in processing. However, this process faces the problems of secondary processing alignment of ion trap preparation substrates and low precision of manual assembly in the manufacturing process, which limits the application ability of ion trap technology in quantum information processing. With the progress of science and technology, people have higher and higher requirements for the processing precision of ion traps. The traditional semiconductor processing technology of ion traps has been unable to meet the preparation needs of ion traps. SUMMARY

[0003] The present application aims to at least solve one of the technical problems existing in the prior art. To this end, the present application provides a preparation system of an ion trap, which can better meet the needs of actual products.

[0004] In a first aspect, the present application provides a preparation system of an ion trap, comprising an ultrafast laser direct writing system, a chemical etching device, a high-temperature annealing device and a film coating device. The ultrafast laser direct writing system comprises a laser, a laser beam expansion and collimation element group, an aberration correction element group and an objective lens. The laser emits a laser beam which is expanded and collimated by the laser beam expansion and collimation element group and is aberration-corrected by the aberration correction element group. The laser beam is then focused by the objective lens and projected onto a target area of an ion trap preparation substrate, so as to modify the target area of the ion trap preparation substrate. The chemical etching device is used to remove the modified target area of the ion trap preparation substrate to obtain a groove structure of the ion trap. The high-temperature annealing device is used to perform high-temperature annealing on the ion trap preparation substrate to achieve smoothing treatment of the surface of the groove structure of the ion trap. The film coating device is used to coat the surface of the ion trap preparation substrate.

[0005] In some embodiments, the ultrafast laser direct writing system further comprises a first three-dimensional translation stage and a second three-dimensional translation stage, wherein the objective lens is arranged on the first three-dimensional translation stage and the ion trap preparation substrate is arranged on the second three-dimensional translation stage.

[0006] In some embodiments, the laser beam expansion and collimation element group further comprises a beam expander, an attenuator, a collimator lens group and a mirror group. The collimator lens group comprises a collimator lens, a half-wave plate and a quarter-wave plate arranged in the optical path in sequence.

[0007] In some embodiments, the aberration correction element group is arranged between the beam expander and the collimator lens group of the laser beam expansion and collimation element group.

[0008] In some embodiments, the above-mentioned aberration correction element group comprises a 4F filter and a spatial light modulator, the 4F filter comprises a first lens, a pinhole and a second lens arranged in sequence, and the spatial light modulator is arranged between the second lens and the collimating lens group.

[0009] In some embodiments, the chemical etching device comprises a temperature control device, and an etching cavity arranged in the temperature control device, and the temperature control device comprises a sealed electric heating constant temperature forced air oven.

[0010] In some embodiments, the coating device comprises one of a magnetron sputtering coating device and an electron beam evaporation coating device.

[0011] In some embodiments, the heating component of the high-temperature annealing device comprises a muffle furnace.

[0012] In some embodiments, the ion trap preparation substrate is a transparent medium.

[0013] In a second aspect, the present application provides a preparation method of an ion trap based on the ion trap preparation system in any of the above-mentioned embodiments, the method comprising:

[0014] The laser beam is subjected to beam expansion and collimation by the laser beam expansion and collimation element group, and is subjected to aberration correction by the aberration correction element group, and then is subjected to convergence by the objective lens and is projected onto the target region of the ion trap preparation substrate, so as to modify the target region of the ion trap preparation substrate. Then, the modified target region of the ion trap preparation substrate is removed by the chemical etching device, so as to obtain the groove structure of the ion trap. Then, the ion trap preparation substrate is subjected to high-temperature annealing by the high-temperature annealing device, so as to smooth the surface of the groove structure of the ion trap. Finally, the surface of the ion trap preparation substrate is coated by the coating device.

[0015] In the embodiments of the present application, the target region of the ion trap preparation substrate is first modified by the ultrafast laser direct writing system, and then the modified region is etched and removed by the chemical etching device. This process can focus the laser at different depths of the ion trap preparation substrate by changing the focal plane, so as to realize all laser processing of the ion trap preparation substrate in one fixing, thereby solving the problem of secondary processing alignment in the traditional manufacturing process. Then, the ion trap preparation substrate is subjected to high-temperature annealing treatment, so as to improve the flatness of the surface of the ion trap preparation substrate, thereby improving the performance of the ion trap. Finally, the surface of the ion trap preparation substrate which has completed the high-temperature annealing process is coated by the coating device, so as to realize the preparation of the ion trap. The above-mentioned preparation process does not require manual assembly, and the processing precision of the ion trap is greatly improved.

[0016] Additional aspects and advantages of the present application will be in part apparent and in part pointed out hereinafter. BRIEF DESCRIPTION OF DRAWINGS

[0017] The above and / or additional aspects and advantages of the present application will become apparent and more readily appreciated from the following description, taken in conjunction with the following drawings in which:

[0018] Figure 1 A system architecture diagram of a preparation system of an ion trap provided for an embodiment of the present application;

[0019] Figure 2 An optical path schematic diagram of an ultrafast laser direct writing system provided for an embodiment of the present application;

[0020] Figure 3 An optical path schematic diagram of another ultrafast laser direct writing system provided for an embodiment of the present application;

[0021] Figure 4 An optical path schematic diagram of a laser beam expander collimation element group provided for an embodiment of the present application;

[0022] Figure 5 An optical path schematic diagram of still another ultrafast laser direct writing system provided for an embodiment of the present application;

[0023] Figure 6 An optical path schematic diagram of yet another ultrafast laser direct writing system provided for an embodiment of the present application;

[0024] Figure 7 A structural schematic diagram of a 4F filter provided for an embodiment of the present application;

[0025] Figure 8 An architecture diagram of a chemical etching apparatus provided for an embodiment of the present application;

[0026] Figure 9 A process schematic diagram of cleaning a substrate for ion trap preparation provided for an embodiment of the present application;

[0027] Figure 10 A process schematic diagram of an ion trap preparation method provided for an embodiment of the present application. DETAILED DESCRIPTION

[0028] Embodiments of the present application are described in detail below with reference to the attached drawing figures, wherein the same or like reference numerals are used throughout the drawings to refer to the same or like components or elements. The embodiments described below are illustrative of the present application, and are not intended to be limiting of the present application.

[0029] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0030] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0031] In the description of this application, "first feature" and "second feature" may include one or more of the features.

[0032] In the description of this application, "multiple" means two or more.

[0033] In the description of this application, the first feature being "above" or "below" the second feature may include the first and second features being in direct contact, or the first and second features being in contact through another feature between them.

[0034] In the description of this application, the terms "above," "over," and "on top" for the first feature and the second feature include the first feature being directly above or diagonally above the second feature, or simply indicate that the first feature is at a higher horizontal level than the second feature.

[0035] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0036] The application provides a preparation system of an ion trap, Figure 1 The system architecture diagram of the preparation system of the ion trap provided in the embodiment of the application is shown in Figure 1 As shown in the figure, the preparation system A of the ion trap comprises an ultrafast laser direct writing system 1, a chemical etching device 2, a high-temperature annealing device 3 and a film coating device 4.

[0037] Figure 2 The optical path schematic diagram of the ultrafast laser direct writing system provided in the embodiment of the application is shown in Figure 2 As shown in the figure, the ultrafast laser direct writing system 1 comprises a laser 11, a laser beam expansion and collimation element group 12, an aberration correction element group 13 and an objective lens 14. The laser 11 converts electric power into laser and emits. The emitted laser beam is subjected to beam expansion and collimation processing by the laser beam expansion and collimation element group 12 and aberration correction processing by the aberration correction element group 13. The aberration correction element group 13 utilizes the characteristics of optical Fourier transform to realize laser spatial frequency modulation and analysis, thereby improving the beam quality. The laser beam is converged by the objective lens 14, so that the laser emitted by the laser 11 converges to the diffraction limit and is projected to the target region of the ion trap preparation substrate 5 at a very high energy at the focal point of the objective lens 14, so as to modify the target region of the ion trap preparation substrate 5.

[0038] In some embodiments, a frequency doubling crystal is included in the laser 11, for improving the energy of the laser beam emitted by the laser 11.

[0039] In some embodiments, after the modification of the target region of the ion trap preparation substrate 5 by the ultrafast laser direct writing system 1 is completed, the modified target region of the ion trap preparation substrate 5 is removed by the chemical etching device 2, so as to obtain the trench structure of the ion trap. The formation of the trench structure enables the ion trap preparation substrate 5 to realize the segmentation of the electrode after being coated by the film coating device 4.

[0040] Further, the high-temperature annealing device 3 is used for high-temperature annealing of the ion trap preparation substrate 5, so as to realize the smoothing processing of the surface of the trench structure of the ion trap, and then the film coating device 4 is used for coating the surface of the ion trap preparation substrate 5.

[0041] In the embodiment of the present application, the ultrafast laser direct writing system 1 modifies the target region of the ion trap preparation substrate 5, the chemical etching device 2 etches and removes the modified region, and this process can realize all laser processing of the ion trap preparation substrate 5 in one fixing, solving the problem of secondary processing alignment in the traditional manufacturing process. The high-temperature annealing device 3 performs high-temperature annealing processing on the ion trap preparation substrate 5, so as to improve the surface flatness of the ion trap preparation substrate 5, and further improve the overall performance of the ion trap chip product. Finally, the coating device 4 coats the surface of the ion trap preparation substrate 5 which has completed the annealing processing, so as to realize the preparation of the ion trap. The above preparation process does not need manual assembly, and the processing precision of the ion trap is improved.

[0042] In some embodiments, a three-dimensional translation stage can also be provided to fix the objective lens and the ion trap preparation substrate 5, Figure 3 Another optical path schematic diagram of an ultrafast laser direct writing system provided by the embodiment of the present application is provided. As shown in Figure 3 The ultrafast laser direct writing system 1 further includes a first three-dimensional translation stage 151 and a second three-dimensional translation stage 152. The objective lens 14 is arranged on the first three-dimensional translation stage 151 and is controlled to move by the first three-dimensional translation stage 151. The ion trap preparation substrate 5 is arranged on the second three-dimensional translation stage 152 and is controlled to move by the second three-dimensional translation stage 152. For example, the first three-dimensional translation stage 151 and the second three-dimensional translation stage 152 can both be nanoscale high-precision three-axis displacement stages. The first three-dimensional translation stage 151 is a Z translation stage that can only move in the Z direction. The second three-dimensional translation stage 152 is an XY translation stage that can only move in the XY plane. The first three-dimensional translation stage 151 and the second three-dimensional translation stage 152 can jointly realize fine position adjustment and control of the laser in the X, Y and Z orthogonal directions.

[0043] Figure 4 An optical path schematic diagram of the laser beam expander collimation element group provided by the embodiment of the present application is provided.

[0044] In some embodiments, as shown in Figure 4 The laser beam expander collimation element group 12 includes a beam expander 121, an attenuator 122, a collimation lens group 123 and a mirror group 124. The collimation lens group 123 includes a collimation lens 123a, a half-wave plate 123b and a quarter-wave plate 123c arranged in the optical path in sequence.

[0045] In this embodiment, the laser emitted by the laser 11 first passes through the attenuator 122 to absorb or reflect part of the light energy, and then passes through the expander 121 to expand the laser diameter and reduce the divergence angle of the laser, thereby reducing the power density of the laser, so as to avoid damage to the ion trap prepared substrate 5 caused by high-energy laser. The collimating mirror group 123 is used to convert the laser into a parallel light beam, which helps to improve the working effect of other elements in the laser beam expansion and collimation element group 12, thereby improving the resolution and accuracy of the entire ultrafast laser direct writing system 1. The mirror group 124 is used to change the transmission direction of the laser, which is convenient for realizing the overall layout of the laser beam expansion and collimation element group 12.

[0046] Figure 5 Another optical path schematic diagram of an ultrafast laser direct writing system provided by an embodiment of the present application is provided. Figure 6 Another optical path schematic diagram of an ultrafast laser direct writing system provided by an embodiment of the present application is provided. Figure 7 A structural schematic diagram of a 4F filter provided by an embodiment of the present application is provided.

[0047] In some embodiments, as shown in Figure 5 The aberration correction element group 13 is arranged between the expander 121 and the collimating mirror group 123 of the laser beam expansion and collimation element group 12.

[0048] In some embodiments, as shown in Figure 6 The aberration correction element group 13 further includes a 4F filter 131 and a spatial light modulator 132. As shown in Figure 7 The 4F filter 131 includes a first lens 131a, a pinhole 131b and a second lens 131c arranged in sequence. The 4F filter 131 can remove or weaken the unnecessary frequencies in the laser, thereby improving the quality of the laser beam. The spatial light modulator 132 is arranged between the second lens 131c and the collimating mirror group 123. The laser passes through the 4F filter 131 and is incident on the spatial light modulator 132, so as to be phase compensated by the spatial light modulator 132, to compensate for the aberration of the laser after passing through the attenuator 122, the expander 121 and the 4F filter 131, to obtain a plane phase laser, thereby further improving the beam quality and processing precision.

[0049] Figure 8 An architectural diagram of a chemical etching device provided by an embodiment of the present application is provided.

[0050] In some embodiments, as shown in Figure 8As shown, the chemical etching device 2 includes a temperature control device 21, and an etching cavity 211 arranged in the temperature control device. For example, the temperature control device can be a closed electric heating constant temperature blast oven. After the target area of the ion trap preparation substrate 5 is laser modified, the ion trap preparation substrate 5 is placed in the etching cavity 211, and the temperature control device 21 is used to heat the temperature to about 1,000 degrees Celsius and keep constant for several hours, so that the modified area of the ion trap preparation substrate 5 is removed by chemical reaction to obtain a groove structure of the ion trap.

[0051] In some embodiments, the heating component of the high-temperature annealing device 3 includes a muffle furnace. After the groove structure of the ion trap after chemical etching is cleaned with distilled water and dried, it is heated to an annealing temperature in the heating component of the high-temperature annealing device 3, and the surface of the groove structure of the ion trap is smoothed by using the principle of micro-melting of the surface of the ion trap preparation substrate 5 at high temperature.

[0052] In some embodiments, the film coating device 4 includes one of a magnetron sputtering film coating device and an electron beam evaporation film coating device. Before film coating, the ion trap preparation substrate 5 is cleaned, Figure 9 The process flow for cleaning the ion trap preparation substrate provided by the embodiments of the present application is shown in FIG. 6. Figure 9 As shown, the process for cleaning the ion trap preparation substrate 5 is as follows:

[0053] Step 901: acetone 80℃ washing for 10 min for three times;

[0054] Step 902: methanol soaking for 1 min;

[0055] Step 903: ultrapure water gradient tank flushing for 20 min;

[0056] Step 904: anhydrous ethanol soaking for dehydration;

[0057] Step 905: 100 degrees Celsius oven baking for 20 min.

[0058] When the film coating device 4 is a magnetron sputtering film coating device, the specific steps for coating the groove area of the ion trap are as follows: the ion trap preparation substrate 5 is fixed by an aluminum alloy metal plate with a hollow center groove and placed in the center position of the sputtering machine tray. If an inclined target is used, the tray is rotated, and if a vertical target is used, the target material is translated along a straight line. The vacuum is pumped to a working vacuum of 2E-4 Pa, the temperature is raised at a rate of about 2.3℃ / min to 80℃, and the process takes 25 minutes. After the film is coated, the process vacuum is 5E-1 Pa, and after the film coating is completed, the temperature is lowered at a rate of about 1.2℃ / min to room temperature and kept for 2 hours. The chamber is opened. The magnetron sputtering film coating device can deposit thin films at a relatively low temperature of the ion trap preparation substrate 5, which helps to improve the adhesion between the thin film and the ion trap preparation substrate 5, and is suitable for film coating of temperature-sensitive substrates.

[0059] When the coating device 4 is an electron beam evaporation coating device, the specific steps for coating the groove region of the ion trap are as follows: the ion trap preparation substrate 5 is fixed by the center hollow groove aluminum alloy metal plate, and is placed in the center position of the evaporation machine tray. The tray is rotated, vacuumized to a working vacuum of 2E-4 Pa, and then heated at a rate of about 3.5℃ / min to 80℃ for 17 minutes, and then kept for 1 hour. Then, coating is started, and after completion, it is cooled to room temperature at a rate of about 2.6℃ / min and kept for 2 hours before opening the chamber. The electron beam evaporation coating device is carried out in a high vacuum environment, and can produce high-purity thin films. The energy of the electron beam evaporation directly acts on the coating material, and the evaporation efficiency and energy utilization rate are high, which is suitable for coating of substrates with high temperature resistance.

[0060] In some embodiments, the ion trap preparation substrate 5 is a transparent medium. Traditional semiconductor processes use semiconductor materials such as silicon to manufacture ion traps. Since the semiconductor materials such as silicon have serious absorption loss to microwaves and have a relatively narrow energy band gap, the ion trap is prone to failure under high temperature and high pressure conditions, and the small band gap also limits the light transmission performance of the ion trap. The embodiments of the present application can use transparent media such as quartz glass, sapphire, diamond, etc. as ion trap preparation substrates 5. These transparent media have little absorption to microwaves, and at the same time have good voltage resistance, light transmission characteristics and heat conductivity, which can also improve the manufacturing precision of the ion trap.

[0061] The embodiments of the present application also provide a preparation method for preparing an ion trap according to the above preparation system, Figure 10 The flowchart of the ion trap preparation method provided by the embodiments of the present application is based on the specific steps of the ion trap preparation method of the preparation system in any of the above embodiments, as shown in the figure, which includes: Figure 10

[0062] Step 1001: The laser beam passes through the laser beam expansion and collimation element group 12 in the ultrafast laser direct writing system 1 for beam expansion and collimation processing, and the aberration correction element group 13 for aberration correction processing. Then, the laser beam is focused by the objective lens 14 and projected to the target region of the ion trap preparation substrate 5, so as to modify the target region of the ion trap preparation substrate 5;

[0063] Step 1002: The chemical etching device 2 removes the modified target region of the ion trap preparation substrate 5 to obtain the groove structure of the ion trap;

[0064] Step 1003: The high-temperature annealing device 3 performs high-temperature annealing on the ion trap preparation substrate 5 to realize the smoothing processing of the surface of the groove structure of the ion trap;

[0065] Step 1004: The coating device 4 coats the surface of the ion trap preparation substrate 5 to realize the preparation of the ion trap. ​

[0066] The preparation method of the ion trap provided in the embodiment of the present application first modifies the target region of the ion trap preparation substrate 5 by the ultrafast laser direct writing system 1, and then etches and removes the modified region by the chemical etching device 2. This process can focus the laser at different depths of the ion trap preparation substrate 5 by changing the focal plane, so as to realize all laser processing of the ion trap preparation substrate 5 in one fixing, thereby solving the problem of secondary processing alignment in the traditional manufacturing process. Then, the ion trap preparation substrate 5 is subjected to high-temperature annealing treatment, so as to improve the flatness of the surface of the ion trap preparation substrate 5, thereby improving the performance of the ion trap. Finally, the surface of the ion trap preparation substrate 5 that has completed the high-temperature annealing process is coated by the coating device 4, so as to realize the preparation of the ion trap. The above preparation process does not need manual assembly, and the processing precision of the ion trap is improved.

[0067] The specific content of the preparation method in the embodiment can be referred to the description in the preparation system embodiment.

[0068] Although the embodiments of the present application have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, replacements and variations can be made to these embodiments without departing from the principles and purposes of the present application, and the scope of the present application is defined by the claims and their equivalents.

Claims

1. A system for preparing an ion trap, characterized in that, include: An ultrafast laser direct writing system includes a laser, a laser beam expander and collimator group, an aberration correction element group, and an objective lens. The laser beam emitted by the laser is expanded and collimated by the laser beam expander and collimator group, and aberrations are corrected by the aberration correction element group. The objective lens then focuses the laser beam and projects it onto the target area of ​​the substrate prepared by the ion trap, thereby modifying the target area of ​​the substrate prepared by the ion trap. A chemical etching apparatus is used to remove the modified target region from the substrate for preparing the ion trap, thereby obtaining the trench structure of the ion trap. A high-temperature annealing equipment is used to perform high-temperature annealing on the substrate for preparing the ion trap, so as to achieve a smooth surface treatment of the trench structure of the ion trap; A coating device for coating the surface of the substrate used to prepare the ion trap; The laser beam expanding and collimating element group also includes a beam expander, an attenuator, a collimating mirror group, and a reflecting mirror group. The collimating mirror group includes a collimating lens, a half-wave plate, and a quarter-wave plate arranged sequentially in the optical path. The substrate for the ion trap is a transparent medium.

2. The preparation system according to claim 1, characterized in that, The ultrafast laser direct writing system also includes: A first three-dimensional translation stage and a second three-dimensional translation stage, wherein the objective lens is disposed on the first three-dimensional translation stage and the ion trap preparation substrate is disposed on the second three-dimensional translation stage.

3. The preparation system according to claim 1, characterized in that, The aberration correction element group is disposed between the beam expander of the laser beam expanding and collimating element group and the collimating lens group.

4. The preparation system according to claim 3, characterized in that, The aberration correction element group includes a 4F filter and a spatial light modulator. The 4F filter includes a first lens, a pinhole, and a second lens arranged in sequence. The spatial light modulator is disposed between the second lens and the collimating lens group.

5. The preparation system according to any one of claims 1-4, characterized in that, The chemical etching equipment includes a temperature control device and an etching chamber disposed in the temperature control device, wherein the temperature control device includes a sealed electric thermostatic forced-air oven.

6. The preparation system according to claim 1, characterized in that, The coating equipment includes one of magnetron sputtering coating equipment and electron beam evaporation coating equipment.

7. The preparation system according to claim 1, characterized in that, The heating component of the high-temperature annealing equipment includes a muffle furnace.

8. A method for preparing an ion trap based on the preparation system described in any one of claims 1-7, characterized in that, include: In the ultrafast laser direct writing system, the laser beam emitted by the laser is expanded and collimated by a laser beam expanding and collimating element group and filtered by a 4F filter. The laser beam is then focused by the objective lens and projected onto the target area of ​​the substrate prepared by the ion trap, so as to modify the target area of ​​the substrate prepared by the ion trap. A chemical etching apparatus is used to remove the modified target region from the substrate used to prepare the ion trap, thereby obtaining the trench structure of the ion trap. The high-temperature annealing equipment performs high-temperature annealing on the substrate for preparing the ion trap, so as to achieve a smooth surface treatment of the trench structure of the ion trap; The coating equipment coats the surface of the substrate prepared by the ion trap.

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