Np n mid mid dual-color tellurium cadmium mercury infrared photodetector semiconductor device and preparation method

Abstract

The application discloses a kind of middle middle dual-color infrared photoelectric detector semiconductor devices and preparation method, it is related to semiconductor technology, comprising: S10, simulation model is established, and the trend of the relationship between the parameters of each layer of device and device performance is obtained by performance test experiment;S20, based on relationship trend, determine the range of the parameters of each layer of device;S30, substrate layer is grown in turn;First n-type layer, Cd component 0.33~0.36, In doped concentration 5×10 14 / cm 3 ~5×10 16 / cm 3 , thickness 4 μm~9 μm;P type layer, Cd component 0.35~0.38, Hg vacancy or As doped concentration 5×10 16 / cm 3 ~5×10 18 / cm 3 , thickness 2 μm~5 μm;Second n-type layer, Cd component 0.29~0.31, In doped concentration 5×10 14 / cm 3 ~5×10 16 / cm 3 , thickness 2 μm~5 μm;Device inclination 75°~90°.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to an n p n middle dual-color mercury cadmium telluride infrared photodetector semiconductor device and a preparation method thereof. BACKGROUND

[0002] Due to the excellent carrier transport characteristics, large adjustable response range, and high photoelectric conversion efficiency of HgCdTe material, the mercury cadmium telluride (HgCdTe) infrared detector is widely used in infrared detection systems, and can work in the atmospheric window of 1 μm-3 μm, 3 μm-5 μm and 8 μm-12 μm. Although the monochromatic detector can find effective targets, the detection of complex target radiation characteristics still needs to be improved. With the development of HgCdTe infrared detection technology, the demand for multi-color imaging systems in various fields such as optical fiber communication, 3D laser radar, astronomical observation and atmospheric detection has been put on the agenda.

[0003] Multicolor detector can provide more than two waveband information, which is superior to monochrome detector in target recognition, signal identification and anti-interference performance. At present, many international institutions have carried out research on multicolor infrared detector and put it into practical application. The existing technology of dual-color mercury cadmium telluride detector adopts two n-type absorption layers and one p-type barrier layer to form two back-to-back diode structures. The working mode of the dual-color readout circuit of the mercury cadmium telluride detector of the British SELEX company can realize single-color signal integration / readout, dual-color signal sequential / integral readout, or 2 times of alternating integral / readout of dual-color signal. The development of dual-band focal plane can be traced back to the MW / LW linear array dual-color detector started in 1995. The MW / LW linear array dual-color detector realizes n p n structure 25μm pixel 256×256 SW / MW focal plane, and the readout circuit adopts the working mode of sequential integration of dual-color signal. On the basis of nearly ten years of technology accumulation, Sofradir proposes a new semiplanar technology route which is still used today. After optimization of the new technology, 24μm pixel 640×512 MW / LW focal plane assembly shelf product is realized after 2009. The detector of Sofradir company adopts the technical route of semiplanar structure. By integrating the dual-color signal input stage unit circuit in the pixel area of the readout circuit, the synchronous integration of the dual-color signal is realized, and the dual-color signal is completely synchronized in time domain. For the requirement of synchronous integration of dual-color signal, the existing technology realizes synchronous integration and synchronous readout of dual-color signal in limited pixel area through special well capacitance design technology and high-density layout and wiring technology. Another technology based on 0.35μm 2P4M process adopts direct injection and TDMI integration structure to develop 640×512 dual-color focal plane readout circuit suitable for laminated structure. Although the research on multicolor detector has made certain progress, the research task of preparing mature multicolor detector with high performance is still very arduous and urgent. SUMMARY

[0004] The embodiment of the present application provides an n p n middle dual-color mercury cadmium telluride infrared photodetector semiconductor device and a preparation method, which are used for designing and optimizing material preparation and device structure parameters, so as to provide a device with better sensitivity, higher response speed, smaller dark current, lower crosstalk and other performances, and meet the high performance requirements of high sensitivity, high response and low dark current, low crosstalk and the like of n p n type dual-color mercury cadmium telluride photodetector in various fields.

[0005] The embodiment of the present application provides a preparation method of an n p n middle dual-color mercury cadmium telluride infrared photodetector semiconductor device, which comprises the following steps:

[0006] S10, a simulation model of a dual-color mid-wavelength HgCdTe infrared photodetector semiconductor device in an npn structure is established, and through performance test experiments, the component, doping concentration, thickness of the first n-type HgCdTe layer, the p-type HgCdTe layer and the second n-type HgCdTe layer, and the relationship trends of the device dark current, electrode current, quantum efficiency, light response and crosstalk are obtained; and the relationship trends of the device inclination and the device dark current, electrode current, quantum efficiency, light response and crosstalk are obtained;

[0007] S20, based on the obtained component, doping concentration, thickness of the first n-type HgCdTe layer, the p-type HgCdTe layer and the second n-type HgCdTe layer, and the relationship trends of the device inclination and the device dark current, electrode current, quantum efficiency, light response and crosstalk, the component range, doping concentration range and thickness range of the first n-type HgCdTe layer, the p-type HgCdTe layer and the second n-type HgCdTe layer of the to-be-prepared dual-color mid-wavelength HgCdTe infrared photodetector device in an npn structure are determined, and the inclination range of the to-be-prepared device is determined;

[0008] S30, a substrate layer is grown, and the first n-type HgCdTe layer, the p-type HgCdTe layer and the second n-type HgCdTe layer are sequentially grown on the substrate layer; wherein,

[0009] The thickness of the first n-type HgCdTe layer is 4 μm to 9 μm;

[0010] The thickness of the second n-type HgCdTe layer is 2 μm to 5 μm;

[0011] The thickness of the p-type HgCdTe layer is 2 μm to 5 μm;

[0012] The inclination range of the whole device is 75° to 90°.

[0013] Optionally, the component, doping concentration, thickness of the first n-type HgCdTe layer, the p-type HgCdTe layer and the second n-type HgCdTe layer, and the relationship trends of the device dark current, electrode current, quantum efficiency, light response and crosstalk are obtained through performance test experiments, the component range, doping concentration range and thickness range of the first n-type HgCdTe layer, the p-type HgCdTe layer and the second n-type HgCdTe layer are determined according to the corresponding relationship trends, and the inclination range of the device is determined according to the obtained relationship trends of the device inclination and the device dark current, electrode current, quantum efficiency, light response and crosstalk.

[0014] Optionally, the first n-type HgCdTe layer grown is a shorter mid-wavelength n-type HgCdTe layer, the Cd component range is 0.33 to 0.36, the In doping concentration range is 5×10 14 / cm3 ~5x10 16 / cm 3 .

[0015] Optionally, the Cd composition of the second n-type HgCdTe layer ranges from 0.29 to 0.31, and the In doping concentration ranges from 5x10 14 / cm 3 ~5x10 16 / cm 3 .

[0016] Optionally, the p-type HgCdTe layer is a long-wave n-type HgCdTe layer, the Cd composition of which ranges from 0.35 to 0.37, and the Hg vacancy or As doping concentration ranges from 5x10 16 / cm 3 ~5x10 18 / cm 3 , and the Cd composition of the p-type HgCdTe layer is greater than or equal to the Cd composition of the n-type HgCdTe layer.

[0017] The embodiment of the present application further provides an n-p-n dual-color tellurium-cadmium-mercury infrared photodetector semiconductor device, which comprises:

[0018] a substrate or a composite substrate;

[0019] a first n-type HgCdTe layer grown on the substrate or the composite substrate, wherein the thickness of the first n-type HgCdTe layer ranges from 4.0 μm to 9.0 μm;

[0020] a p-type HgCdTe layer grown on the first n-type HgCdTe layer, wherein the thickness of the p-type HgCdTe layer ranges from 2.0 μm to 5.0 μm;

[0021] a second n-type HgCdTe layer grown on the p-type HgCdTe layer, wherein the thickness of the second n-type HgCdTe layer ranges from 2.0 μm to 5.0 μm.

[0022] Optionally, the first n-type HgCdTe layer is a 3.0 μm to 4.0 μm middle-wave n-type HgCdTe layer, the In doping concentration of which ranges from 5x10 14 / cm 3 ~5x10 16 / cm 3 , and the Cd composition ranges from 0.33 to 0.36.

[0023] Optionally, the p-type HgCdTe layer has a Hg vacancy or As doping concentration of 5x10 16 / cm 3 ~5x10 18 / cm 3Cd component is 0.35-0.37, and the Cd component value of the p-type HgCdTe layer is greater than or equal to the Cd component value of the n-type HgCdTe layer.

[0024] Optionally, the second n-type HgCdTe layer is a 4.0-5.0 mu m middle wave n-type HgCdTe layer, and the In doping concentration is 5*10 14 / cm 3 -5*10 16 / cm 3 , and the Cd component is 0.29-0.31.

[0025] The embodiment of the present application also provides an n-p-n middle dual-color mercury cadmium telluride infrared photodetector semiconductor device, which is prepared by the method as described above.

[0026] The embodiment of the present application optimizes the material preparation and device structure parameters, thereby providing a device with better sensitivity, higher response speed, smaller dark current, lower crosstalk and other performances, and meeting the high performance requirements of high sensitivity, high response and low dark current, low crosstalk and the like of the n-p-n dual-color mercury cadmium telluride photodetector in various fields.

[0027] The above description is only a summary of the technical scheme of the present application, in order to more clearly understand the technical means of the present application, and to be implemented according to the content of the specification, and in order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the following specific embodiments of the present application are described. BRIEF DESCRIPTION OF DRAWINGS

[0028] Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The accompanying drawings are included to provide a description of the preferred embodiments and are not meant to limit the present application. Moreover, the same reference numerals in the attached drawings indicate the same or similar components. In the drawings:

[0029] Figure 1 The basic flowchart of the preparation method of the n-p-n middle dual-color mercury cadmium telluride infrared photodetector semiconductor device of the embodiment of the present application is shown in the figure;

[0030] Figure 2 The structure diagram of the n-p-n middle dual-color mercury cadmium telluride infrared photodetector semiconductor device of the embodiment of the present application is shown in the figure;

[0031] Figure 3 The higher performance diagram of the n-p-n middle dual-color mercury cadmium telluride infrared photodetector semiconductor device of the embodiment of the present application under moderate component is shown in the figure;

[0032] Figure 4(a) 4.0-5.0 μm middle wave n layer quantum efficiency wavelength graph (b) 3.0-4.0 μm middle wave n layer quantum efficiency wavelength graph (c) crosstalk thickness graph (d) light response wavelength graph (e) 3.0-4.0 μm middle wave n layer current wavelength graph (f) 4.0-5.0 μm middle wave n layer current wavelength graph (thickness unit: μm) for performance of the dual-color n p n middle middle tellurium cadmium mercury detector in the application example changing with the thickness of the 3.0-4.0 μm middle wave n layer;

[0033] Figure 5 (a) 4.0-5.0 μm middle wave n layer quantum efficiency wavelength graph (b) 3.0-4.0 μm middle wave n layer quantum efficiency wavelength graph (c) crosstalk thickness graph (d) light response wavelength graph (e) 3.0-4.0 μm middle wave n layer current wavelength graph (f) 4.0-5.0 μm middle wave n layer current wavelength graph (thickness unit: μm) for performance of the dual-color n p n middle middle tellurium cadmium mercury detector in the application example changing with the thickness of the p layer;

[0034] Figure 6 (a) 4.0-5.0 μm middle wave n layer quantum efficiency wavelength graph (b) 3.0-4.0 μm middle wave n layer quantum efficiency wavelength graph (c) crosstalk thickness graph (d) light response wavelength graph (e) 3.0-4.0 μm middle wave n layer current wavelength graph (f) 4.0-5.0 μm middle wave n layer current wavelength graph (thickness unit: μm) for performance of the dual-color n p n middle middle tellurium cadmium mercury detector in the application example changing with the thickness of the 3.0-4.0 μm middle wave n layer;

[0035] Figure 7 (a) 4.0-5.0 μm middle wave n layer quantum efficiency wavelength graph (b) crosstalk thickness graph (c) light response wavelength graph (d) current wavelength graph (thickness unit: μm) for performance of the dual-color n p n middle middle tellurium cadmium mercury detector in the application example changing with the tilt of the pixel. DETAILED DESCRIPTION

[0036] Exemplary embodiments of the present disclosure will be described in greater detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it is understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that the present disclosure can be more thoroughly understood, and the scope of the present disclosure can be accurately conveyed to those skilled in the art.

[0037] The embodiments of the present application provide an n p n middle dual-color tellurium cadmium mercury infrared photodetector semiconductor device and a preparation method, as shown in Figure 1 The embodiments of the present application provide an n p n middle dual-color tellurium cadmium mercury infrared photodetector semiconductor device and a preparation method, as shown in

[0038] S10. Establish a simulation model of the npn dual-color mercury cadmium telluride infrared photodetector semiconductor device. Through performance testing experiments, obtain the relationship trends of the composition, doping concentration, thickness of the first n-type HgCdTe layer, p-type HgCdTe layer, and second n-type HgCdTe layer with the device's dark current, electrode current, quantum efficiency, photoresponse, and crosstalk. Also obtain the relationship trends of the device's tilt angle with the device's dark current, electrode current, quantum efficiency, photoresponse, and crosstalk.

[0039] S20, based on the obtained composition, doping concentration, thickness, and device tilt of the first n-type HgCdTe layer, p-type HgCdTe layer, and second n-type HgCdTe layer, and the relationship trend of device dark current, electrode current, quantum efficiency, photoresponse, and crosstalk, the composition range, doping concentration range, and thickness range of the first n-type HgCdTe layer, p-type HgCdTe layer, and second n-type HgCdTe layer of the npn dual-color mercury cadmium telluride infrared photodetector to be prepared, and the tilt range of the device to be prepared are determined respectively;

[0040] S30, a substrate layer is grown, and a first n-type HgCdTe layer, a p-type HgCdTe layer, and a second n-type HgCdTe layer are sequentially grown on the substrate layer; wherein...

[0041] The thickness of the first n-type HgCdTe layer is 4 μm to 9 μm;

[0042] The thickness of the second type n HgCdTe layer is 2 μm to 5 μm;

[0043] The thickness of the p-type HgCdTe layer is 2 μm to 5 μm;

[0044] The overall tilt angle of the device ranges from 75° to 90°, for example, in some examples, such as Figure 1 As shown, the tilt angle between the side of the semiconductor device and the horizontal plane (bottom top surface) ranges from 75° to 90°, and the cross-sectional width of the substrate or composite substrate is greater than the cross-sectional width of the second n-type HgCdTe layer 3.

[0045] Optionally, performance testing experiments are conducted to obtain the relationship trends between the composition, doping concentration, thickness, and device dark current, electrode current, quantum efficiency, photoresponse, and crosstalk of the first n-type HgCdTe layer, the p-type HgCdTe layer, and the second n-type HgCdTe layer, respectively. Based on the corresponding relationship trends, the composition range, doping concentration range, and thickness range of the first n-type HgCdTe layer, the p-type HgCdTe layer, and the second n-type HgCdTe layer are determined; and the tilt range of the device is determined based on the obtained relationship trends between the device tilt and device dark current, electrode current, quantum efficiency, photoresponse, and crosstalk.

[0046] Optionally, the grown first n-type HgCdTe layer is a 3.0-4.0 pm mid-wave n-type HgCdTe layer with a Cd composition in the range of 0.33-0.36 and an In doping concentration in the range of 5x1017-5x1018 / cm3. 14 / cm3 3 / cm3 16 / cm3 3 .

[0047] Optionally, the second n-type HgCdTe layer has a Cd composition in the range of 0.29-0.31 and an In doping concentration in the range of 5x1017-5x1018 / cm3. 14 / cm3 3 / cm3 16 / cm3 3 .

[0048] Optionally, the p-type HgCdTe layer has a Cd composition in the range of 0.35-0.37 and an Hg vacancy or As doping concentration in the range of 5x1017-5x1018 / cm3, and the Cd composition of the p-type HgCdTe layer is greater than or equal to the Cd composition of the n-type HgCdTe layer. 16 / cm3 3 / cm3 18 / cm3 3 .

[0049] The embodiments of the present application also provide an npn mid dual-color mercury cadmium telluride infrared photodetector semiconductor device, as shown in FIG. 1, which includes: Figure 2

[0050] a substrate or a composite substrate;

[0051] a first n-type HgCdTe layer 1 grown on the substrate or the composite substrate, which is a 3.0-4.0 pm n-type HgCdTe layer with a thickness of 4.0-9.0 pm and doped with In, for example, a 3.0-4.0 pm mid-wave n-type HgCdTe layer is grown on the substrate or the composite substrate.

[0052] a p-type HgCdTe layer 2 grown on the first n-type HgCdTe layer 1, which has a thickness of 2.0-5.0 pm and is doped with Hg vacancies or As;

[0053] a second n-type HgCdTe layer 3 grown on the p-type HgCdTe layer 2, which is a 4.0-5.0 pm n-type HgCdTe layer with a thickness of 2.0-5.0 pm and doped with In, for example, a longer mid-wave n-type HgCdTe layer is grown on the p-type HgCdTe layer 2.

[0054] In some embodiments, as shown in FIG. 2, the npn mid dual-color mercury cadmium telluride infrared photodetector semiconductor device includes: Figure 2 ​As shown, the side of the infrared photodetector semiconductor device is inclined to the horizontal plane at an angle in the range of 75° to 90°, and the cross-sectional width of the substrate or composite substrate is greater than the cross-sectional width of the second n-type HgCdTe layer 3.

[0055] The embodiments of the present application optimize the material preparation and device structure parameters, thereby providing a device with good sensitivity, high response speed, small dark current, low crosstalk and other performances, and meeting the high performance requirements of high sensitivity, high response and low dark current, low crosstalk and the like for n p n dual-color mercury cadmium telluride photodetectors in various fields.

[0056] In some embodiments, the first n-type HgCdTe layer 1 (3.0 μm to 4.0 μm middle wave n-type HgCdTe layer) has an In doping concentration of 5×10 14 / cm 3 to 5×10 16 / cm 3 , and a Cd component in the range of 0.33 to 0.36.

[0057] In some embodiments, the p-type HgCdTe layer 2 has an Hg vacancy or As doping concentration of 5×10 16 / cm 3 to 5×10 18 / cm 3 , and a Cd component in the range of 0.35 to 0.37. The Cd component value of the p-type HgCdTe layer is greater than or equal to the Cd component value of the n-type HgCdTe layer, and the Cd component value of the p-type HgCdTe layer is greater than or equal to the Cd component value of the n-type HgCdTe layer.

[0058] In some embodiments, the second n-type HgCdTe layer 3 (4.0 μm to 5.0 μm middle wave n-type HgCdTe layer) has an In doping concentration of 5×10 14 / cm 3 to 5×10 16 / cm 3 , and a Cd component in the range of 0.29 to 0.31.

[0059] Figure 3 FIG. 4 shows the performance of the n p n dual-color mercury cadmium telluride infrared photodetector semiconductor device according to the embodiments of the present application (wherein the thickness of the 4.0 μm to 5.0 μm middle wave layer is 2 μm, the component x=0.3; the thickness of the p layer is 2.2 μm, the component x=0.37; the thickness of the 3.0 μm to 4.0 μm middle wave layer is 5 μm, the component x=0.345, and the crosstalk is 4.3%). Based on the attached performance table, the performance of the device is shown in the figure. Figure 2 As can be seen, under the appropriate component and doping concentration design of the present application, the detector can have high quantum efficiency, good light response, good I-V value, low crosstalk, and the difference between the dark current and the photoelectric current is more than two orders of magnitude.

[0060] Figure 4 is the performance chart corresponding to the thickness variation of the 4.0-5.0 μm middle wave layer of the n-p-n middle wave dual-color HgCdTe infrared photodetector in the application example, which is shown in Figure 4 (a) It can be seen that the overall quantum efficiency of the 4.0-5.0 μm middle wave n layer gradually increases with the increase of the thickness of the 4.0-5.0 μm middle wave n layer. In some specific application examples, the thickness of 2-3.5 μm can be selected, which can further solve the problem of difficulty in etching process caused by the over-thickness of the longer 4.0-5.0 μm middle wave n layer on the upper layer of the device structure. From Figure 4 (b) It can be seen that the quantum efficiency of the 3.0-4.0 μm middle wave n layer changes little with the increase of the thickness of the 4.0-5.0 μm middle wave n layer. 4(c) With the increase of the thickness of the 4.0-5.0 μm middle wave n layer, the crosstalk of the detector gradually increases. Figure 4 (d) shows that the detector has better light response under the design condition. Figure 4 (e) and Figure 4 (f) shows that the current calculation order of magnitude of the two wave bands conforms to the current range of general detectors. According to the calculation, the thickness design of the 4.0-5.0 μm middle wave n layer proposed in the application example is more than two orders of magnitude different in the dark current and current order of magnitude of the two wave bands.

[0061] Figure 5 is the performance chart corresponding to the thickness variation of the p layer of the n-p-n middle wave dual-color HgCdTe infrared photodetector in the application example, which is shown in 5(a). It can be seen that the quantum efficiency of the 4.0-5.0 μm middle wave n layer gradually decreases at the shorter wave band with the increase of the thickness of the p layer. 5(b) describes that the quantum efficiency of the 3.0-4.0 μm middle wave n layer changes little with the increase of the thickness of the p layer. 5(c) can be seen that the crosstalk of the detector gradually decreases with the increase of the thickness of the p layer. Figure 5 (d) shows that the detector has better light response under the design condition. Figure 5 (e) and Figure 5 (f) shows that the current calculation order of magnitude of the two wave bands conforms to the current range of general detectors. According to the calculation, the thickness design of the p-type HgCdTe layer proposed in the application example is more than two orders of magnitude different in the dark current and current order of magnitude of the two wave bands.

[0062] Figure 6 is the performance chart corresponding to the thickness variation of the shorter middle wave layer of the n-p-n middle wave dual-color HgCdTe infrared photodetector in the application example, which is shown in Figure 6(a) It can be seen that with the increase of the thickness of the 3.0-4.0 μm middle wave n layer, the overall quantum efficiency of the 4.0-5.0 μm middle wave n layer changes little, but the quantum efficiency in the 3.0-4.0 μm band gradually decreases. Figure 6 (b) It is described that with the increase of the thickness of the 3.0-4.0 μm middle wave n layer, the quantum efficiency of the 3.0-4.0 μm middle wave n layer shows a decreasing trend, and the band with higher quantum efficiency is offset to the 4.0-5.0 μm direction.

[0063] In the embodiment of the application, the thickness of the first n-type HgCdTe layer is designed to be 4.0-9.0 μm, which is relatively thick, and solves the problem that the transmittance of the thinner 3.0-4.0 μm middle wave n layer to light with shorter wavelength is relatively high, which can cause higher quantum efficiency of the 3.0-4.0 μm band in the 4.0-5.0 μm band, thereby increasing the string noise of the device.

[0064] Figure 6 (c) With the increase of the thickness of the 3.0-4.0 μm middle wave n layer, the string noise of the detector gradually decreases. Figure 6 (d) It shows that the detector has better light response under the design condition. Figure 6 (e) and Figure 6 (f) It shows that the current calculation order of magnitude of the two bands conforms to the current range of general detectors. According to the calculation, the thickness design of the 3.0-4.0 μm middle wave n layer in the embodiment of the application makes the dark current and current order of magnitude of the two bands differ by more than two orders of magnitude.

[0065] Figure 7 is an application example illustrating the n p n middle wave dual-color tellurium cadmium infrared photodetector device inclination change related performance diagram. From Figure 7 (a) and Figure 7 (b) It can be seen that with the increase of the pixel inclination, the quantum efficiency of the 4.0-5.0 μm middle wave n layer gradually decreases, so that the string noise also gradually decreases. From Figure 7 (b) It can be seen that changing the pixel inclination can adjust the string noise of the device to a smaller value. Figure 7 (c) It shows that the detector has better light response under the design condition. Figure 7 (d) It shows that the current calculation order of magnitude of the detector under the design condition conforms to the current range of general detectors. According to the calculation, the two side surface inclination design in the embodiment of the application makes the dark current and current order of magnitude of the two bands differ by more than two orders of magnitude.

[0066] As can be seen from the relational graph, in the device parameter range determined by the embodiments of the present application, the device maintains high quantum efficiency, high high response and low crosstalk, and the dark current and the device current differ by more than two orders of magnitude. Further, considering the actual low dark current, high sensitivity, high responsivity, low crosstalk and other performances, the device material and device structure can be adjusted according to the relationship trend graph. The device structure of the embodiments of the present application lays a foundation for the preparation of high-performance n p n type middle-wave dual-color mercury cadmium telluride photodetector.

[0067] The embodiments of the present application also propose an n p n middle dual-color mercury cadmium telluride infrared photodetector semiconductor device, which is prepared by the method as described above.

[0068] It should be noted that in the embodiments of the present application, the terms "comprise", "contain" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such process, method, article or device. Without more limitations, the element defined by the sentence "comprises a" does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0069] The above-mentioned serial numbers of the embodiments of the present application are only for description, and do not represent the advantages and disadvantages of the embodiments.

[0070] The embodiments of the present application are described above in combination with the drawings, but the present application is not limited to the above-mentioned specific embodiments, and the above-mentioned specific embodiments are only illustrative, not restrictive. Those skilled in the art can make many forms under the inspiration of the present application without departing from the scope of the present application and the scope of protection of the claims, and these all belong to the protection of the present application.

Claims

1. A method for preparing an npn mid-infrared photodetector semiconductor device of mid-dual-color mercury cadmium telluride, characterized in that, Comprise: S10, establish the simulation model of npn middle-middle dual-color mercury cadmium telluride infrared photodetector semiconductor device, obtain the component, doping concentration, thickness and device dark current, electrode current, quantum efficiency, light response, cross talk relationship trend of the first n-type HgCdTe layer, p-type HgCdTe layer and second n-type HgCdTe layer respectively through performance test experiment; And obtain the inclination of the device and the relationship trend of the device dark current, electrode current, quantum efficiency, light response, cross talk; S20, based on the component, doping concentration, thickness of the first n-type HgCdTe layer, p-type HgCdTe layer and second n-type HgCdTe layer and the inclination of the device, and the relationship trend of the device dark current, electrode current, quantum efficiency, light response, cross talk, respectively determine the component range, doping concentration range, thickness range of the first n-type HgCdTe layer, p-type HgCdTe layer and second n-type HgCdTe layer of the npn middle-middle dual-color mercury cadmium telluride infrared photodetector to be prepared, and determine the inclination range of the device to be prepared; S30, grow the substrate layer, and grow the first n-type HgCdTe layer, p-type HgCdTe layer and second n-type HgCdTe layer on the substrate layer in turn; Wherein, The thickness of the first n-type HgCdTe layer is 4-9 mu m; The thickness of the second n-type HgCdTe layer is 2-5 mu m; The thickness of the p-type HgCdTe layer is 2-5 mu m; The inclination range of the whole device is 75-90 degrees.

2. The method of producing npn mid-infrared dual-color mercury cadmium telluride photodetector semiconductor device according to claim 1, wherein, The first n-type HgCdTe layer for growth is a short-wave n-type HgCdTe layer with a Cd component ranging from 0.33 to 0.36 and an In doping concentration ranging from 5x10 14 / cm 3 ~5x10 16 / cm 3 .

3. The method of producing npn mid-infrared dual-color mercury cadmium telluride photodetector semiconductor device according to claim 1, wherein, The Cd component of the second n-type HgCdTe layer ranges from 0.29 to 0.31, and the In doping concentration ranges from 5 x 1016 / cm3 to 5 x 1018 / cm3. 14 / cm 3 / cm 16 / cm 3 .

4. The method of producing an npn mid- mid dual-color tellurium-cadmium-mercury infrared photodetector semiconductor device according to claim 1, wherein The p-type HgCdTe layer is a longer middle wave n-type HgCdTe layer, the Cd component range is 0.35-0.37, the Hg vacancy or As doping concentration range is 5*10 16 / cm 3 ~5*10 18 / cm 3 , and the p-type HgCdTe layer Cd component value is greater than or equal to the n-type HgCdTe layer Cd component value.

5. A semiconductor device prepared by the method of any one of claims 1-4, wherein the semiconductor device is characterized by: Comprise: Substrate or composite substrate; The first n-type HgCdTe layer is grown on the substrate or composite substrate, and the thickness of the first n-type HgCdTe layer is 4.0-9.0 mu m; The p-type HgCdTe layer is grown on the first n-type HgCdTe layer, and the thickness of the p-type HgCdTe layer is 2.0-5.0 mu m; The second n-type HgCdTe layer is grown on the p-type HgCdTe layer, and the thickness of the second n-type HgCdTe layer is 2.0-5.0 mu m.

6. The npn mid-mid dual-color mercury cadmium telluride infrared photodetector semiconductor device of claim 5, wherein, The first n-type HgCdTe layer is a short-wave n-type HgCdTe layer with an In doping concentration of 5×10 14 / cm 3 ~5×10 16 / cm 3 and a Cd component of 0.33~0.

36.

7. The npn mid-mid dual-color mercury cadmium telluride infrared photodetector semiconductor device of claim 5, wherein, The p-type HgCdTe layer has a Hg vacancy or As concentration of 5*10 16 / cm 3 ~5*10 18 / cm 3 , a Cd component of 0.35~0.37, and a p-type HgCdTe layer Cd component value greater than or equal to an n-type HgCdTe layer Cd component value.

8. The npn mid-mid dual-color mercury cadmium telluride infrared photodetector semiconductor device of claim 5, wherein, The second n-type HgCdTe layer is a longer middle wave n-type HgCdTe layer, the doping In concentration is 5×10 14 / cm 3 ~5×10 16 / cm 3 , and the Cd component is 0.29~0.31.

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