Method of manufacturing a susceptor

Abstract

The present invention relates to a manufacturing method of a pedestal, in which a cap sleeve structure or a tube structure is used in a bonding structure of a base substrate and an insulating plate, so that an increase in pressure inside a gas flow path during a curing process can be sustained or prevented, thereby preventing a clogging phenomenon of a gas hole in a high power pedestal for a high aspect ratio contact (HARC) process or the like, and reducing contamination around the gas hole to minimize generation of an arc.

Description

TECHNICAL FIELD

[0001] The present application relates to a manufacturing method of a susceptor, and more particularly, to a manufacturing method of a susceptor for protecting a cooling gas hole from an adhesive. BACKGROUND

[0002] Generally, a semiconductor device or a display device is manufactured in a manner of sequentially stacking a plurality of thin film layers including a dielectric layer and a metal layer on a glass substrate, a flexible substrate, or a semiconductor wafer substrate, and then patterning the same. The thin film layers are sequentially deposited on the substrate by a Chemical Vapor Deposition (CVD) process or a Physical Vapor Deposition (PVD) process. The CVD process includes a Low Pressure CVD (LPCVD) process, a Plasma Enhanced CVD (PECVD) process, a Metal Organic CVD (MOCVD) process, etc.

[0003] In such a CVD device and a PVD device, a susceptor is provided, which supports a glass substrate, a flexible substrate, a semiconductor wafer substrate, etc. and is used for a semiconductor process. The susceptor can have a chuck electrode installed in the CVD device and the PVD device and used to support the substrate, and a heater wire used to heat the substrate in a heat treatment process, etc. Also, the susceptor has a high frequency (RF) electrode instead of the heater wire or further has the high frequency (RF) electrode and is used to form plasma in an etching process of a thin film layer on the substrate, etc.

[0004] In such a susceptor, a base substrate and an insulation plate adhered thereto have a prescribed cooling structure so as to uniformly cool the substrate on the insulation plate using an external cooling gas. Generally, a cooling structure is provided so that a cooling gas flow path provided in the base substrate is communicated with a gas hole provided in the insulation plate. In a process of adhering such a base substrate and an insulation plate using a liquid adhesive, various attempts have been made to prevent the adhesive from penetrating into the gas hole.

[0005] Figure 1 is a view for explaining an adhesive method of a base substrate 20 and an insulation plate 13 of a conventional susceptor.

[0006] Referring to Figure 1In a conventional base manufacturing process, when bonding a base substrate 20 having a gas flow path 21 and an insulating plate 13 having a gas hole 3 using a liquid adhesive 12, an insulating bushing 40 is inserted into the end of the gas flow path 21, a bonding film 50 is overlaid thereon, a bonding process is performed to prevent the liquid adhesive 12 from penetrating into the gas flow path 21, and then a further appropriate process is added to communicate with the gas hole 3.

[0007] However, when bonding the base substrate 20 and the insulating plate 13 after applying such a bonding film 50, heat curing is performed, at which time the bonding film 50 swells due to thermal expansion, thereby failing to completely prevent the phenomenon of the adhesive 12 penetrating into the gas flow path 21. Due to this, such a structure can become a cause of poor gas supply and generation of particles or generation of an arc due to contamination around the gas hole, etc. This problem is particularly serious in a high-power base for a high aspect ratio contact (HARC) process, etc. SUMMARY

[0008] PROBLEMS TO BE SOLVED BY THE INVENTION

[0009] Therefore, the present invention has been made in view of the above problems, and it is an object of the present invention to provide a base manufacturing method and a base manufactured by the method, in which a cap bushing structure or a tube structure is used in a bonding structure of a base substrate and an insulating plate, thereby being able to withstand or prevent an increase in pressure inside a gas flow path during a curing process, and thus being able to prevent a clogging phenomenon of a gas hole and minimize generation of an arc due to contamination around the gas hole in a high-power base for a high aspect ratio contact (HARC) process, etc.

[0010] MEANS FOR SOLVING THE PROBLEMS

[0011] First, the features of the present invention are summarized as follows. A base manufacturing method according to one aspect of the present invention for achieving the object can include: a cap bushing structure insertion step of inserting a cap bushing structure into a groove formed at an end of a gas flow path extending toward a gas hole of an insulating plate; a bonding layer formation step of forming a bonding layer around the cap bushing structure using an adhesive; a bonding step of placing a base substrate on the bonding layer and bonding the base substrate to the insulating plate such that an end of a gas flow path of the base substrate is in contact with the cap bushing structure; and a machining step of machining in a manner such that a through-hole is formed in the cap bushing structure under the gas flow path of the base substrate.

[0012] Also, a manufacturing method of a susceptor according to another aspect of the present application can include: a step of inserting a tubular structure into a groove formed at an end portion of a gas flow path extending toward a gas hole of an insulating plate; a step of forming an adhesive layer using an adhesive so as to have a height lower than an end portion of the tubular structure; a step of adhering a base substrate including an electrode layer on the adhesive layer and adhering by inserting the tubular structure into a gas flow path of the base substrate; and a step of removing the tubular structure.

[0013] In the step of inserting the tubular structure, a sleeve structure having a through hole can be inserted into the groove first, and then the tubular structure can be inserted into an inner side of the sleeve structure.

[0014] The sleeve structure can be made of the same material as the insulating plate, i.e., ceramic material.

[0015] The sleeve structure can have a height extending above the end portion of the groove of the insulating plate.

[0016] The tubular structure can be made of plastic material.

[0017] A diameter of the tubular structure is preferably equal to or less than a diameter of the groove of the end portion of the gas flow path extending toward the gas hole of the insulating plate.

[0018] A diameter of the tubular structure is preferably equal to or less than a diameter of the through hole of the inner side of the sleeve structure.

[0019] Also, a susceptor according to another aspect of the present application can include: a base substrate having a gas flow path for supplying a cooling gas, an insulating plate fixed on the base substrate and having a gas hole, and a sleeve structure having a through hole so that the gas flow path and the gas hole are communicated between the base substrate and the insulating plate; wherein the sleeve structure can include a screw taper formed in an inner wall of the through hole.

[0020] The screw taper can be used for a tubular structure screw fastening for preventing penetration of an adhesive in a manufacturing process.

[0021] Effects of the Invention

[0022] The manufacturing method of the susceptor according to the present application and the susceptor manufactured by the method adopt a cap sleeve structure or a tube structure in the adhesive structure of the base substrate and the insulating plate, so that the increase in pressure inside the gas flow path during the curing process can be sustained or prevented, thereby preventing the clogging phenomenon of the gas holes in a high power susceptor for a high aspect ratio contact (HARC) process or the like, and reducing the contamination around the gas holes to minimize the generation of an arc. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 is a view for explaining an adhesive method of a base substrate 20 and an insulating plate 13 of a conventional susceptor.

[0024] Figure 2 is a schematic cross-sectional view of a susceptor according to an embodiment of the present application.

[0025] Figure 3 is an enlarged cross-sectional view of an AA portion of Figure 2

[0026] Figures 4a to 4d is a cross-sectional view of a gas hole portion in each process of a manufacturing process of a susceptor according to an embodiment of the present application.

[0027] Figures 5a to 5c is a cross-sectional view of a gas hole portion in each process of a manufacturing process of a susceptor according to another embodiment of the present application.

[0028] Figure 6 is a view for explaining another embodiment of the manufacturing process of Figure 5a

[0029] REFERENCE NUMERALS

[0030] 15: cooling gas flow path

[0031] 30: gas hole

[0032] 200: base substrate

[0033] 300: insulating plate

[0034] 312: adhesive

[0035] 410: cap sleeve structure

[0036] 420: sleeve structure having a through hole

[0037] 520: tube structure DETAILED DESCRIPTION

[0038] ​​The present application will be described below with reference to the accompanying drawings. At this time, the same components in each drawing are denoted by the same reference numerals as far as possible. In addition, the description of known functions and / or configurations will be omitted. The following disclosure will mainly describe the parts necessary for understanding the operation of various embodiments, and the description of elements that can obscure the gist of the description will be omitted. In addition, some of the components in the drawings can be enlarged, omitted, or schematically illustrated. The size of each component cannot fully reflect the actual size, and therefore, the content described herein is not limited by the relative size or spacing of the components illustrated in each drawing.

[0039] In describing the embodiments of the present application, if it is judged that a detailed description of the known technology related to the present application unnecessarily obscures the gist of the present application, the detailed description will be omitted. Also, the terms described later are terms defined in consideration of the functions of the present application, and can differ depending on the intention of the user, the operator, or the case. Therefore, the definition should be made based on the content of the entire specification. The terms used in the specification are used only for the purpose of describing the embodiments of the present application, and are not intended to limit. The singular number form should include the plural number form unless otherwise specified. The expressions "include" or "have" or the like in the specification are used to refer to any feature, number, step, action, member, or combination thereof, and should not be understood as excluding the existence or addition possibility of one or more other features, numbers, steps, actions, members, or combinations thereof.

[0040] In addition, the first, second, and the like terms, although they can be used to describe various components, the components are not limited to the terms. The terms are used only to distinguish one component from another component.

[0041] First, in the present application, the susceptor is a semiconductor device for processing a variety of purposes of a processing target substrate such as a semiconductor wafer, a glass substrate, a flexible substrate, and the like, and in order to support the processing target substrate, an electrostatic chuck electrode serving as an electrostatic chuck can be provided, or in order to heat the processing target substrate to a prescribed temperature, a heating wire (or a heating body) for a heater can be provided, or in order to perform a process such as plasma-enhanced chemical vapor deposition on the processing target substrate, a high-frequency electrode can be further provided or can be substituted for the heating wire.

[0042] Therefore, it is stated in advance that, as described below, the susceptor of the present application is a structure in which a base material including a gas flow path and an insulating plate including an electrode layer are bonded, and the electrode layer provided on the insulating plate includes a conductor for realizing the function of any one or more of the electrostatic chuck electrode, the high-frequency electrode, or the heating wire (or the heating body) as described above.

[0043] Figure 2is a schematic cross-sectional view of a base 100 according to an embodiment of the present application.

[0044] Referring to Figure 2 , a base 100 according to an embodiment of the present application includes a base substrate 200 and an insulating plate 300 bonded together by an adhesive 312. The base 100 is preferably circular, but in some cases, can also be designed as an oval, a quadrangle, or other shapes.

[0045] The base substrate 200 can be formed of a multi-layer structure including a plurality of metal layers. The metal layers can be bonded by a brazing process, a welding process, or a bonding process, etc. The insulating plate 300 is fixed to the base substrate 200, which can be fixed to the base substrate 200 by using a prescribed fixing means or an adhesive / bonding means. The base substrate 200 and the insulating plate 300 can be separately manufactured and then bonded, and according to circumstances, a structure of the insulating plate 300 can also be formed directly on the upper surface of the base substrate 200 using a ceramic sheet or the like.

[0046] As shown in Figure 2 , the insulating plate 300 includes an electrode layer 320 between ceramic materials composed of a ceramic sheet or powder. As an embodiment, the ceramic materials can be made of a substance selected from among materials of alumina (Al2O3), aluminum nitride (AIN), silicon carbide (SiC), silicon nitride (Si3N4), silicon dioxide (SiO2), barium oxide (BaO), zinc oxide (ZnO), cobalt oxide (CoO), tin oxide (SnO2), zirconium oxide (ZrO2), Y2O3, YAG, YAM, YAP, etc. The insulating plate 300 can be formed on the upper surface of the base substrate 200 using a ceramic material as described above by a thermal spraying, a bonding process of a ceramic sheet, etc.

[0047] The electrode layer 320 can be made of a conductive metal material. As an example, the electrode layer 320 can be formed of at least one of silver (Ag), gold (Au), nickel (Ni), tungsten (W), molybdenum (Mo), and titanium (Ti), and more preferably, can be formed of tungsten (W). The electrode layer 320 can be formed using a thermal spraying process or a screen printing process. The electrode layer 320 has a thickness of about 1.0 μm to 100 μm. For example, preferably, a thickness of 1.0 ~ 30 μm can be applied when the electrode layer 320 is formed by the screen printing process, and a thickness of 30 ~ 100 μm can be applied when the electrode layer 320 is formed by the thermal spraying process. However, since it is difficult to form a layer of the electrode layer 320 having a thickness of less than 1.0 μm or the like, it is not preferable, and in this case, a resistance value is increased due to porosity and other defects in the electrode layer, and a phenomenon in which an electrostatic chucking force is decreased as the resistance value is increased can occur, and thus it is not preferable. In addition, when the thickness of the electrode layer 320 is too thick, such as more than 100 μm or the like, an arcing phenomenon can occur, and thus it is not preferable. Accordingly, the thickness of the electrode layer 320 preferably applies an appropriate value within a range of about 1.0 μm to 100 μm. The electrode layer 320 thus formed can be, as an example, an electrostatic chucking electrode capable of generating an electrostatic force by receiving a bias voltage when a substrate (not shown) disposed on an upper portion of the dielectric layer 330 is loaded, and performing de-chucking by applying an opposite bias voltage to the electrode layer 320 to cause discharge when the substrate (not shown) is unloaded.

[0048] However, it is not limited thereto, and according to circumstances, the electrode layer 320 can further include an electrode pattern for a heater or a high-frequency electrode pattern for generating plasma. In other words, the base 100 of the present application, which is a semiconductor device for processing various kinds of target substrates such as semiconductor wafers, glass substrates, flexible substrates, etc., can have an electrostatic chucking electrode on the electrode layer 320 serving as an electrostatic chuck for supporting the target substrate, and a heating wire (or a heating body) for heating the target substrate to a prescribed temperature, or a high-frequency electrode for performing a process treatment such as plasma-enhanced chemical vapor deposition on the target substrate, or can replace the heating wire.

[0049] When the base 100 is installed inside a chamber for a semiconductor process, in order to uniformly cool a substrate (e.g., a glass substrate, a flexible substrate, a semiconductor wafer substrate, etc.) on the insulating plate 300 using an external cooling gas, the base substrate 200 and the insulating plate 300 can have a prescribed cooling structure around the air hole 30 as shown in FIG. 4. Figure 3

[0050] Figure 3 is Figure 2 ​Fig. 6 is a sectional view of the AA portion of Fig. 5, with the upper and lower positions reversed. Here, the base substrate 200 is placed on the insulation plate 300 as described below, and the upper and lower positions are reversed to conform to the process at the time of bonding.

[0051] Referring to Figure 3 , for example, in order to supply cooling gas, as Figure 2 indicated, the cooling gas flow path 15 is provided in the interior of the base substrate 200 in an appropriate pattern, and the through hole of the cooling gas flow path 15 and the cooling gas hole 30 of the insulation plate 300 are fluidly connected by the penetration prevention sleeve structure 400 (see Figure 4c cap sleeve structure 410 of Fig. 4 or Figure 5c sleeve structure 420 of Fig. 5) of the adhesive 312 of the manufacturing process of the present application, so that cooling gas can be ejected from the cooling gas hole 30, thereby uniformly cooling the substrate on the insulation plate 300. The cooling gas at this time can mainly use helium (He), but is not necessarily limited thereto, and various suitable gases can be used. The cooling gas hole 30 of the insulation plate 300 can be formed in an appropriate number according to design.

[0052] In Figure 2 , for example, chucking and de-chucking or bias for heating or providing high frequency can be applied to the electrode layer 320 from the prescribed electrode rod 281 provided through the hole 280 of the lower portion of the susceptor 100. According to design, an appropriate number of cooling gas holes 30 can be formed between prescribed electrode patterns forming the electrode layer 320, and the cooling gas holes 30 can be formed to fluidly connect from the cooling gas flow path 15 to the upper surface of the insulation plate 300 through the sleeve structure 400 portion.

[0053] Figures 4a to 4d is a sectional view of the gas hole portion in each process for explaining the manufacturing process of the susceptor 100 according to an embodiment of the present application.

[0054] Referring to Figure 4a , in an embodiment of the present application, in order to manufacture the susceptor 100 having the cooling gas hole 30, first, the insulation plate 300 in which the groove 290 is formed at the end portion of the gas flow path 15 extending to the gas hole 30 of the insulation plate 300 for supplying cooling gas is prepared. At this time, it is preferable that the insulation plate 300 has the gas hole 30 pre-processed at a necessary position and the gas flow path extending from the gas hole 30 to the groove 290. For such processing of the gas hole 30 and the gas flow path, laser processing of a machining center (MCT) or the like can be used, and a hole having a diameter of 1 mm or less or several mm or less can be processed.

[0055] Next, the manufacturing process of the base 100 can be implemented on a prescribed workbench, but will not be described again, and in order to prevent contamination of the gas holes 30 when the insulating plate 300 is placed on the workbench, the lower side of the insulating plate 300 is preferably protected with an adhesive film in the drawings.

[0056] A cap-sleeve structure 410 is inserted into the groove 290 of the insulating plate 300, which is closed at the top and opened at the bottom toward the gas holes 30 in the drawings. Preferably, the cap-sleeve structure 410 is manufactured to have a height higher than the height extending above the end of the groove 290 of the insulating plate 300 and is inserted into the groove 290. The cap-sleeve structure 410 can be made of a heat-resistant, wear-resistant insulator, metal, or ceramic material, or the like, and preferably can be the same material as the ceramic material of the insulating plate 300 as described above.

[0057] Also, referring to Figure 4b After the cap-sleeve structure 410 is inserted into the groove 290 of the insulating plate 300, a liquid adhesive 312 such as silicone paste is used to form an adhesive layer around (i.e., the sides and the top of) the cap-sleeve structure 410. At this time, when the adhesive 312 is applied on the cap-sleeve structure 410, the adhesive 312 can be removed only below the height of the cap-sleeve structure 410 by a planarization process. The adhesive 312 is preferably made of a material having an insulation strength of 25 kV / mm or more and a volume resistance of 10 15 Ωcm or more to facilitate the prevention of arcing.

[0058] Next, referring to Figure 4c After the adhesive 312 is used to form an adhesive layer around the cap-sleeve structure 410, the base substrate 200 is placed on the adhesive layer formed by the adhesive 312. At this time, the base substrate 200 is placed on the adhesive layer of the adhesive 312 and is adhered to the insulating plate 300 so that the end of the gas flow path 15 of the base substrate 200 is in contact with (preferably, the center is coincident with) the cap-sleeve structure 410. When the cap-sleeve structure 410 is placed in multiple positions, each cap-sleeve structure 410 and each gas flow path 15 of the corresponding base substrate 200 are in contact with each other and are adhered to the insulating plate 300. At the time of adhesion, after the base substrate 200 is disposed in the manner as described above, the base substrate 200 and the insulating plate 300 are pressed and are heat-cured, thereby firmly adhering the base substrate 200 and the insulating plate 300. At this time, by pressing, the adhesive 312 on the cap-sleeve structure 410 is pressed to be thin as if it does not exist.

[0059] Next, referring to Figure 4dThe cap sleeve structure 410 on the lower side of the gas flow path 15 of the base substrate 200 is processed to form a through hole 411. For example, for the processing of the through hole 411, a machining center (MCT) laser processing or the like can be used, whereby a hole with a diameter of several mm or less can be processed, or preferably, a hole with a diameter of 1 mm or less can be processed. Thereby, fluid communication between the gas flow path 15 of the base substrate 200 and the gas hole 30 of the insulating plate 300 can be achieved.

[0060] In the present application, after the base substrate 200 is adhered to the cap sleeve structure 410 in the above-described manner, the through hole 411 of the cap sleeve structure 410 is processed for use, whereby during the pressing and heat curing process, the phenomenon of fluid communication between the gas hole 30 being blocked by the penetration of the adhesive 312 flowing into the gas flow path 15 can be prevented, and since it is not a structure covered with the adhesive film 50, it can sufficiently withstand the increase in pressure inside the gas flow path without bulging, thereby preventing the phenomenon of the gas hole 30 being blocked.

[0061] Figures 5a to 5c is a sectional view of the gas hole portion in each process of the manufacturing process of the susceptor 100 according to another embodiment of the present application.

[0062] Referring to Figure 5a In an embodiment of the present application, in order to manufacture the susceptor 100 having a cooling gas hole 30, first, an insulating plate 300 in which a groove 290 is formed at the end of a gas flow path 15 extending to the gas hole 30 of the insulating plate 300 for supplying cooling gas is prepared. At this time, preferably, the insulating plate 300 has a gas hole 30 pre-processed at a necessary position. For the processing of such a gas hole 30, a machining center (MCT) laser processing or the like can be used, and a hole with a diameter of 1 mm or less or several mm or less can be processed.

[0063] Hereinafter, likewise, the manufacturing process of the susceptor 100 can be implemented on a prescribed workbench, but will not be described again, and in order to prevent the gas hole 30 from being contaminated when the insulating plate 300 is placed on the workbench, the lower side of the insulating plate 300 in the drawing is preferably protected with an adhesive film.

[0064] A sleeve structure 420 having a through-hole with its top and bottom opened to the air hole 30 is inserted into the recess 290 of the insulating plate 300, and a pipe structure 520 is further inserted inside the sleeve structure 420. Preferably, the sleeve structure 420 having a through-hole is manufactured to have a height higher than the height of the end portion extending above the recess 290 of the insulating plate 300, and is inserted into the recess 290. However, the sleeve structure 420 is not absolutely necessary, and can be omitted. In other words, the pipe structure 520 can be directly inserted into the recess 290 of the insulating plate 300.

[0065] Although it is not necessary to provide a screw tap (female screw) inside the recess 290 of the insulating plate 300, if necessary, a screw tap (female screw) can be provided inside the recess 290 of the insulating plate 300. For example, as in the embodiment of FIG. 2, a structure in which a screw tap (female screw) is formed inside the recess 290 of the insulating plate 300 can be used. At this time, the screw tap inside the recess 290 of the insulating plate 300 is fastened in a screw-fastening manner with the screw tap (male screw) of the sleeve structure 420 or the pipe structure 520 inserted therein. Figure 6

[0066] The sleeve structure 420 can be fixed with an organic silicon adhesive or the like when inserted into the recess 290 of the insulating plate 300. In other words, when the pipe structure 520 is directly inserted into the recess 290 of the insulating plate 300 without using the sleeve structure 420, if there is no screw tap formed inside the recess 290, the pipe structure 520 with or without a screw tap can be directly fixed in the recess 290 of the insulating plate 300 with an organic silicon adhesive or the like. Alternatively, if there is a screw tap formed inside the recess 290, the screw tap formed inside the recess 290 can be screw-fastened with the screw tap (male screw) of the pipe structure 520.

[0067] Also, in the case of using the sleeve structure 420, if there is no screw tap formed inside the recess 290, the sleeve structure 420 with or without a screw tap (male screw) can be directly fixed in the recess 290 of the insulating plate 300 with an organic silicon adhesive or the like. At this time, if there is a screw tap formed inside the recess 290 (see FIG. 2), it can be screw-fastened with the screw tap (male screw) of the sleeve structure 420. Thus, after the sleeve structure 420 is inserted into the recess 290, the pipe structure 520 is further inserted inside (the inner wall of) the sleeve structure 420. At this time, it is preferable to screw-fasten the screw tap (female screw) formed inside the sleeve structure 420 with the screw tap (male screw) of the pipe structure 520. Figure 6

[0068] ​​The tube structure 520 can be made of a flexible material. When the tube structure 520 is directly inserted into the groove 290 of the insulation board 300, the diameter of the tube structure 520 is preferably equal to or less than the diameter of the groove 290 of the insulation board 300. Also, when the sleeve structure 420 is used, the diameter of the tube structure 520 is preferably equal to or less than the diameter of the through-hole of the sleeve structure 420. Thereby, in the subsequent process, penetration of the liquid adhesive 312 between the sleeve structure 420 and the tube structure 520 can be prevented.

[0069] Also, the tube structure 520 is manufactured to have a height higher than the height of the end portion of the sleeve structure 420 extending in the drawing, and is inserted into the sleeve structure 420. For example, the height of the tube structure 520 can be 5 times or more of the height of the sleeve structure 420. For example, when the height of the sleeve structure 420 is 5 mm, the height of the tube structure 520 can be 40 ± 10 mm. In a prescribed jig, a number of such tube structures 520 corresponding to the number of grooves 290 can be prepared in advance, whereby the tube structure 520 can be inserted into the corresponding position.

[0070] The sleeve structure 420 can be made of a heat-resistant, wear-resistant insulator, metal, or ceramic material, and the like, and preferably can be the same material as the ceramic material of the insulation board 300 as described above. The tube structure 520 can be made of a flexible heat-resistant insulating material, such as a flexible plastic material (e.g., an engineering plastic such as polyetherimide (ULTEM) or the like), and the like. The tube structure 520 formed of an engineering plastic or the like can have heat resistance so as not to be deformed in shape at a temperature condition of 170°C or more, and not to be deformed in shape at a heat curing temperature as described above (e.g., 150°C or less).

[0071] Also, with reference to Figure 5b In the groove 290 of the insulation board 300, after only the tube structure 520 is inserted or after the sleeve structure 420 and the tube structure 520 are inserted, a liquid adhesive 312 such as silicone paste or the like is used to form an adhesive layer having a thickness less than the height of the sleeve structure 420 (in the case of using the sleeve structure 420), and the adhesive 312 is used to form an adhesive layer having a thickness less than the height of the uppermost end portion of the tube structure 520. The adhesive 312 is preferably made of a material having an insulation strength of 25 kV / mm or more and a volume resistance of 10 15 Ωcm or more, so as to be advantageous in preventing an arc.

[0072] Next, the base substrate 200 is placed on the adhesive layer formed by the adhesive 312, and the tubular structure 520 is inserted in the gas flow path 15 of the base substrate 200, so that the plurality of upper end portions of the sleeve structure 420 are located in the plurality of grooves 190 of the lower end portion of the gas flow path 15, thereby preparing for adhesion. At this time, preferably, the height of the uppermost end portion of the tubular structure 520 is designed to be able to rise above the upper end surface of the base substrate 200. In Figure 5a and Figure 6 , if the sleeve structure 420 is not used, the plurality of grooves 190 of the lower end portion of the gas flow path 15 can not be formed.

[0073] Subsequently, with reference to Figure 5c , the base substrate 200 and the insulation plate 300 are pressed and heat-cured, thereby firmly adhering the base substrate 200 and the insulation plate 300. After the base substrate 200 and the insulation plate 300 are firmly adhered, the tubular structure 520 is removed. The removal of the tubular structure 520 is as follows: by rotating in the opposite direction to when the sleeve structure 420 is screw-fastened, so that the grooves 290 of the insulation plate 300 or the sleeve structure 420 are separated and removed. In Figure 5a and Figure 6 , even if the sleeve structure 420 is not used, when the tubular structure 520 is removed, it can be separated from the adhesive 312 by applying a proper torsional force or the like, thereby removing the tubular structure 520.

[0074] Thus, using the tubular structure 520, or using the sleeve structure 420 and the tubular structure 520, thereby preventing the penetration of the adhesive 312 into the gas flow path 15 during the pressing and heat-curing, thereby preventing the phenomenon of the fluid communication with the air holes 30 being blocked, and instead of the structure covered by the conventional adhesive film, the air communication is made by the tubular structure 520 higher than the sleeve structure 420, thereby preventing the increase in the pressure inside the gas flow path, thereby enabling the pressing and heat-curing to be stably performed.

[0075] Thus, the base 100 of the present application manufactured according to Figures 5a to 5c and Figure 6 has the following shape: with the case where the base 100 is installed inside a chamber for semiconductor processing as shown in Figure 2 as a reference, the insulation plate 300 is placed on the base substrate 200.

[0076] At this time, the pedestal 100 of the present application includes a base substrate 200 having a gas flow path 15 for supplying a cooling gas, an insulation plate 300 fixed to the base substrate 200 and having a gas hole 30, and a sleeve structure 420 having a through hole so that the gas flow path 15 and the gas hole 30 are communicated between the base substrate 200 and the insulation plate 300. As described above, preferably, the inner wall of the through hole of the sleeve structure 420 is formed with a screw taper. The purpose of the screw taper of the inner wall of the through hole of the sleeve structure 420 can be to screw fasten with the tube structure 520 for preventing the penetration of the adhesive in the manufacturing process as described above. In addition thereto, the outer side (outer wall) of the sleeve structure 420 and the inner side (inner wall) of the groove 290 of the insulation plate 300 can also be formed with a screw taper or the like, and the embodiments as described above are equally applicable thereto.

[0077] As described above, according to the manufacturing method of the pedestal 100 of the present application, by employing the cap type sleeve structure 410 or the tube structure 520 inserted into the cap type sleeve structure 410 or the like in the adhesive structure of the base substrate 200 and the insulation plate 300, it is possible to withstand or prevent the increase in the pressure inside the gas flow path during the curing process, thereby preventing the clogging phenomenon of the gas hole in the high power pedestal for high aspect ratio contact (HARC) process or the like, and reducing the contamination around the gas hole to minimize the generation of the arc.

[0078] As described above, in the present application, specific matters such as specific constituent elements and limited embodiments and drawings have been described, but this is provided only to help the understanding of the whole of the present application, and the present application is not limited to the described embodiments, and a person having ordinary skill in the art to which the present application pertains can make various modifications and changes within the scope not departing from the essential characteristics of the present application. Therefore, the spirit of the present application should not be limited to the described embodiments and determined, and all technical ideas changed equally or equivalently to the appended claims should be interpreted as included in the scope of the present application.

Claims

1. A method of manufacturing a susceptor, wherein comprises: an insertion step of inserting a tubular structure into a groove formed at an end portion of a gas flow path extending to a gas hole of an insulating plate; a formation step of forming an adhesive layer using an adhesive so that the height of the adhesive layer is lower than the height of an end portion of the tubular structure; an adhesion step of adhering a base substrate including the gas flow path for supplying cooling gas on the adhesive layer and adhering by inserting the tubular structure into the gas flow path of the base substrate; and a removal step of removing the tubular structure.

2. The manufacturing method of the base according to claim 1, wherein in the step of inserting the tubular structure, a sleeve structure having a through hole is inserted into the groove first, and then a tubular structure is inserted inside the sleeve structure.

3. The manufacturing method of the base according to claim 2, wherein the sleeve structure is made of the same material as the insulating plate, and is made of a ceramic material.

4. The manufacturing method of the base according to claim 2, wherein the sleeve structure has a height extending to above the end portion of the groove of the insulating plate.

5. The manufacturing method of the base according to claim 1, wherein the tubular structure is made of a plastic material.

6. The manufacturing method of the base according to claim 1, wherein the diameter of the tubular structure is equal to or less than the diameter of the groove at the end portion of the gas flow path extending to the gas hole of the insulating plate.

7. The manufacturing method of the base according to claim 2, wherein the diameter of the tubular structure is equal to or less than the diameter of the through hole at the inside of the sleeve structure.

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