A semiconductor light-emitting element having a carrier leakage suppression layer

Abstract

The present invention proposes a semiconductor light-emitting element with a carrier leakage suppression layer, comprising a substrate, an n-type semiconductor, a quantum well, and a p-type semiconductor, arranged sequentially from bottom to top. A first carrier leakage suppression layer and a second carrier leakage suppression layer are disposed between the p-type semiconductor and the quantum well, with the first carrier leakage suppression layer positioned below the second carrier leakage suppression layer. Both the first carrier leakage suppression layer and the second carrier leakage suppression layer have electron effective mass distribution characteristics and dielectric constant distribution characteristics. The present invention regulates the interface variation angle and interface uniformity of the electron effective mass and dielectric constant at the interface between the first carrier leakage suppression layer and the quantum well, as well as at the interface between the second carrier leakage suppression layer and the first carrier leakage suppression layer and the p-type semiconductor, thereby modulating the interface energy band and interface band order at multiple interfaces, thereby raising the electron overflow barrier and reducing the probability of electron overflow into the p-type semiconductor.

Description

Technical Field

[0001] The present application relates to the field of semiconductor optoelectronic devices, and in particular to a semiconductor light-emitting element having a carrier leakage suppression layer. Background Art

[0002] Semiconductor components, especially semiconductor light-emitting components, have a wide range of adjustable wavelengths, high luminous efficiency, energy saving and environmental protection, a long service life of more than 100,000 hours, small size, multiple application scenarios, and strong designability. They have gradually replaced incandescent lamps and fluorescent lamps, and have become the light source for ordinary household lighting. They are also widely used in new scenarios, such as indoor high-resolution displays, outdoor displays, Mini-LED, Micro-LED, mobile TV backlights, backlighting, street lights, car headlights, daytime running lights, interior atmosphere lights, flashlights and other application fields.

[0003] Traditional nitride semiconductors are grown on sapphire substrates, which have large lattice mismatch and thermal mismatch, resulting in high defect density and polarization effect, reducing the luminous efficiency of semiconductor light-emitting elements; at the same time, the hole ionization efficiency of traditional nitride semiconductors is much lower than the electron ionization efficiency, resulting in a hole concentration that is more than one order of magnitude lower than the electron concentration. Excess electrons will overflow from the multi-quantum wells to the second conductive semiconductor to produce non-radiative recombination. The low hole ionization efficiency will make it difficult for the holes of the second conductive semiconductor to be effectively injected into the multi-quantum wells. The low efficiency of hole injection into the multi-quantum wells will lead to multiple The luminescence efficiency of the sub-well is low; the nitride semiconductor structure has non-central symmetry, and will produce strong spontaneous polarization along the c-axis direction, superimposed with the piezoelectric polarization effect of the lattice mismatch to form an intrinsic polarization field; this intrinsic polarization field along the (001) direction causes the multi-quantum well layer to produce a strong quantum-confined Stark effect, causing energy band tilt and spatial separation of electron-hole wave functions, reducing the radiative recombination efficiency of electrons and holes; the refractive index, dielectric constant and other parameters of the semiconductor light-emitting element are greater than those of air, resulting in a small total reflection angle of the light emitted from the quantum well when it is emitted, and a low light extraction efficiency. Summary of the Invention

[0004] In order to solve one of the above technical problems, the present invention provides a semiconductor light emitting element having a carrier leakage suppression layer.

[0005] An embodiment of the present invention provides a semiconductor light-emitting element having a carrier leakage suppression layer, comprising a substrate, an n-type semiconductor, a quantum well, and a p-type semiconductor arranged in sequence from bottom to top, wherein a carrier leakage suppression layer is provided between the p-type semiconductor and the quantum well, wherein the carrier leakage suppression layer comprises a first carrier leakage suppression layer and a second carrier leakage suppression layer, wherein the first carrier leakage suppression layer is located below the second carrier leakage suppression layer, and both the first carrier leakage suppression layer and the second carrier leakage suppression layer have electron effective mass distribution characteristics and dielectric constant distribution characteristics;

[0006] The peak position of the electron effective mass of the first carrier leakage suppression layer has a descending angle α toward the quantum well, and the valley position of the dielectric constant of the first carrier leakage suppression layer has a rising angle γ toward the quantum well, wherein: 15°≤γ≤α≤90°;

[0007] The peak position of the electron effective mass of the first carrier leakage suppression layer has a descending angle of δ toward the p-type semiconductor, and the valley position of the dielectric constant of the first carrier leakage suppression layer has a rising angle of in:

[0008] The descending angle of the peak position of the electron effective mass of the second carrier leakage suppression layer toward the quantum well is μ, and the rising angle of the valley position of the dielectric constant of the second carrier leakage suppression layer toward the quantum well is ρ, wherein: 10°≤ρ≤μ≤90°;

[0009] The peak position of the electron effective mass of the second carrier leakage suppression layer has a descending angle ε toward the p-type semiconductor, and the valley position of the dielectric constant of the second carrier leakage suppression layer has a rising angle κ toward the p-type semiconductor, wherein: 3°≤κ≤ε≤90°.

[0010] Preferably, the first carrier leakage suppression layer and the second carrier leakage suppression layer also have lattice constant distribution characteristics and spontaneous polarization coefficient distribution characteristics;

[0011] The rising angle of the valley position of the lattice constant of the first carrier leakage suppression layer toward the quantum well is β, and the rising angle of the valley position of the spontaneous polarization coefficient of the first carrier leakage suppression layer toward the quantum well is θ, wherein: 15°≤β≤θ≤90°;

[0012] The rising angle of the valley position of the lattice constant of the first carrier leakage suppression layer toward the p-type semiconductor is σ, and the rising angle of the valley position of the spontaneous polarization coefficient of the first carrier leakage suppression layer toward the p-type semiconductor is ψ, wherein: 20°≤σ≤ψ≤90°;

[0013] The rising angle of the valley position of the lattice constant of the second carrier leakage suppression layer toward the quantum well is υ, and the rising angle of the valley position of the spontaneous polarization coefficient of the second carrier leakage suppression layer toward the quantum well is ω, wherein: 10°≤υ≤ω≤90°;

[0014] The rising angle of the valley position of the lattice constant of the second carrier leakage suppression layer toward the p-type semiconductor is η, and the rising angle of the valley position of the spontaneous polarization coefficient of the second carrier leakage suppression layer toward the p-type semiconductor is ζ, where: 3°≤η≤ζ≤90°.

[0015] Preferably, the descending angle of the peak position of the electron effective mass of the first carrier leakage suppression layer toward the quantum well, the rising angle of the lattice constant, dielectric constant, and valley position of the spontaneous polarization coefficient of the first carrier leakage suppression layer toward the quantum well, the descending angle of the peak position of the electron effective mass of the first carrier leakage suppression layer toward the p-type semiconductor, the rising angle of the lattice constant, dielectric constant, and valley position of the spontaneous polarization coefficient of the first carrier leakage suppression layer toward the p-type semiconductor, the descending angle of the peak position of the electron effective mass of the second carrier leakage suppression layer toward the quantum well, the rising angle of the lattice constant, dielectric constant, and valley position of the spontaneous polarization coefficient of the second carrier leakage suppression layer toward the quantum well, the descending angle of the peak position of the electron effective mass of the second carrier leakage suppression layer toward the p-type semiconductor, and the rising angle of the lattice constant, dielectric constant, and valley position of the spontaneous polarization coefficient of the second carrier leakage suppression layer toward the p-type semiconductor have the following relationship:

[0016] Preferably, the electron effective mass of the first carrier leakage suppression layer has a function y1=A+lnx1-Be x1 Curve distribution, the dielectric constant of the first carrier leakage suppression layer has the function y2=C+De -x1 +x1-1 curve distribution, x1 is the depth from the first carrier leakage suppression layer to the second carrier leakage suppression layer.

[0017] Preferably, the lattice constant of the first carrier leakage suppression layer has the function y3=E+Fe -x1 +x1-1 curve distribution, the spontaneous polarization coefficient of the first carrier leakage suppression layer has a function y4=Gx1+1 / 2x1 first quadrant curve distribution, wherein G≤A≤E≤C.

[0018] Preferably, the electron effective mass of the second carrier leakage suppression layer has a function y5=H+lnx2-x2+1 curve distribution; the dielectric constant of the second carrier leakage suppression layer has a function y6=J+Kx2e x2 Curve distribution, x2 is the depth of the second carrier leakage suppression layer toward the p-type semiconductor.

[0019] Preferably, the lattice constant of the second carrier leakage suppression layer has the function y7=L+Mx2e x2 Curve distribution; The spontaneous polarization coefficient of the second carrier leakage suppression layer has a function y8 = N + Px2 2 e x2 The first quadrant curve distribution, where N≤H≤L≤J.

[0020] Preferably, the first carrier leakage suppression layer and the second carrier leakage suppression layer are any one or any combination of InGaN, InN, AlInN, GaN, AlGaN, AlInGaN, AlN, GaN / AlGaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, GaN / AlInGaN superlattice, AlGaN / AlGaN superlattice, AlGaN / AlInGaN superlattice, GaN / AlGaN / AlN composite structure, and AlGaN / AlN composite structure.

[0021] Preferably, the quantum well is a periodic structure composed of a well layer and a barrier layer, and the well layer of the quantum well is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the well layer thickness is The thickness of the quantum well is 5 angstroms to 200 angstroms; the barrier layer of the quantum well is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the barrier layer thickness is 10 angstroms to 400 angstroms.

[0022] Preferably, the n-type semiconductor and the p-type semiconductor include any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the thickness of the n-type semiconductor is 5 angstroms to 60,000 angstroms, and the thickness of the p-type semiconductor is 10 angstroms to 9,000 angstroms.

[0023] Preferably, the substrate comprises sapphire, diamond, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x Composite substrate, any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrates.

[0024] The beneficial effects of the present invention are as follows: The present invention sets a double-layer carrier leakage suppression layer structure between the p-type semiconductor and the quantum well of the semiconductor light-emitting element, and regulates the interface change angle and interface uniformity of the electron effective mass and dielectric constant at the interface between the first carrier leakage suppression layer and the quantum well, as well as the second carrier leakage suppression layer and the first carrier leakage suppression layer and the p-type semiconductor interface, multiple interfaces modulate the interface energy band and interface band order, increase the electron overflow barrier, and reduce the probability of electron overflow to the p-type semiconductor. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0026] Figure 1 This is a schematic structural diagram of a semiconductor light-emitting element with a carrier leakage suppression layer according to an embodiment of the present invention;

[0027] Figure 2 This is a SIMS secondary ion mass spectrum of a semiconductor light-emitting element with a carrier leakage suppression layer according to an embodiment of the present invention;

[0028] Figure 3 This is a partially enlarged SIMS secondary ion mass spectrum of a semiconductor light-emitting element with a carrier leakage suppression layer according to an embodiment of the present invention;

[0029] Figure 4 This is a TEM lens electron microscope image of the carrier leakage suppression layer of the semiconductor light-emitting element with the carrier leakage suppression layer according to an embodiment of the present invention.

[0030] Reference numerals:

[0031] 100, substrate, 101, n-type semiconductor, 102, quantum well, 103, carrier leakage suppression layer, 104, p-type semiconductor;

[0032] 103a, a first carrier leakage suppression layer, 103b, a second carrier leakage suppression layer. DETAILED DESCRIPTION

[0033] In order to make the technical solutions and advantages of the embodiments of the present application more clearly understood, the exemplary embodiments of the present application are further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, and are not an exhaustive list of all the embodiments. It should be noted that the embodiments and features in the embodiments of the present application can be combined with each other unless they conflict.

[0034] like Figures 1 to 4 As shown, this embodiment proposes a semiconductor light-emitting element with a carrier leakage suppression layer, including a substrate 100, an n-type semiconductor 101, a quantum well 102 and a p-type semiconductor 104 arranged in sequence from bottom to top, and a carrier leakage suppression layer 103 is also arranged between the quantum well 102 and the p-type semiconductor 104.

[0035] Specifically, in this embodiment, the semiconductor light-emitting element is provided with a substrate 100, an n-type semiconductor 101, a quantum well 102, and a p-type semiconductor 104, sequentially from bottom to top. A carrier leakage suppression layer 103 is provided between the quantum well 102 and the p-type semiconductor 104. The carrier leakage suppression layer 103 has a double-layer structure, consisting of a first carrier leakage suppression layer 103a and a second carrier leakage suppression layer 103b, with the first carrier leakage suppression layer 103a located below the second carrier leakage suppression layer 103b.

[0036] The first carrier leakage suppression layer 103a and the second carrier leakage suppression layer 103b both have electron effective mass distribution characteristics and dielectric constant distribution characteristics. In addition, the electron effective mass and dielectric constant in the first carrier leakage suppression layer 103a and the second carrier leakage suppression layer 103b both show a certain change trend toward the quantum well 102 and the p-type semiconductor 104, as shown in the following specific performance:

[0037] The peak position of the electron effective mass of the first carrier leakage suppression layer 103 a shows a downward trend toward the quantum well 102 ;

[0038] The valley position of the dielectric constant of the first carrier leakage suppression layer 103 a shows an upward trend toward the quantum well 102 ;

[0039] Specifically, the peak position of the electron effective mass of the first carrier leakage suppression layer 103a has a descending angle α toward the quantum well 102, and the valley position of the dielectric constant of the first carrier leakage suppression layer 103a has a rising angle γ toward the quantum well 102, where: 15°≤γ≤α≤90°.

[0040] The peak position of the electron effective mass of the first carrier leakage suppression layer 103 a shows a downward trend toward the p-type semiconductor 104 ;

[0041] The valley position of the dielectric constant of the first carrier leakage suppression layer 103 a shows an upward trend toward the p-type semiconductor 104 ;

[0042] Specifically, the peak position of the electron effective mass of the first carrier leakage suppression layer 103a has a descending angle of δ toward the p-type semiconductor 104, and the valley position of the dielectric constant of the first carrier leakage suppression layer 103a has a rising angle of in:

[0043] The peak position of the electron effective mass of the second carrier leakage suppression layer 103 b shows a downward trend toward the quantum well 102 ;

[0044] The valley position of the dielectric constant of the second carrier leakage suppression layer 103 b shows an upward trend toward the quantum well 102 ;

[0045] Specifically, the peak position of the electron effective mass of the second carrier leakage suppression layer 103b has a descending angle μ toward the quantum well 102, and the valley position of the dielectric constant of the second carrier leakage suppression layer 103b has a rising angle ρ toward the quantum well 102, where: 10°≤ρ≤μ≤90°.

[0046] The peak position of the electron effective mass of the second carrier leakage suppression layer 103 b shows a downward trend toward the p-type semiconductor 104 ;

[0047] The valley position of the dielectric constant of the second carrier leakage suppression layer 103 b shows an upward trend toward the p-type semiconductor 104 ;

[0048] Specifically, the peak position of the electron effective mass of the second carrier leakage suppression layer 103b has a descending angle ε toward the p-type semiconductor 104, and the valley position of the dielectric constant of the second carrier leakage suppression layer 103b has a rising angle κ toward the p-type semiconductor 104, where: 3°≤κ≤ε≤90°.

[0049] In this embodiment, a double-layer carrier leakage suppression layer 103 structure is set between the p-type semiconductor 104 and the quantum well 102 of the semiconductor light-emitting element, and the interface change angle and interface uniformity of the electron effective mass and dielectric constant at the interface between the first carrier leakage suppression layer 103a and the quantum well 102, as well as the interface between the second carrier leakage suppression layer 103b and the first carrier leakage suppression layer 103a and the p-type semiconductor 104 are regulated. Multiple interfaces are used to modulate the interface energy band and interface band order, thereby increasing the electron overflow barrier and reducing the probability of electron overflow to the p-type semiconductor 104.

[0050] In some optional embodiments, the first carrier leakage suppression layer 103 a and the second carrier leakage suppression layer 103 b further have lattice constant distribution characteristics and spontaneous polarization coefficient distribution characteristics, and the lattice constant and spontaneous polarization coefficient in the first carrier leakage suppression layer 103 a and the second carrier leakage suppression layer 103 b both show a certain change trend toward the quantum well 102 and the p-type semiconductor 104, which is specifically manifested as follows:

[0051] The valley position of the lattice constant of the first carrier leakage suppression layer 103 a shows an upward trend toward the quantum well 102 ;

[0052] The valley position of the spontaneous polarization coefficient of the first carrier leakage suppression layer 103 a shows an upward trend toward the quantum well 102 ;

[0053] Specifically, the rising angle of the valley position of the lattice constant of the first carrier leakage suppression layer 103a toward the quantum well 102 is β, and the rising angle of the valley position of the spontaneous polarization coefficient of the first carrier leakage suppression layer 103a toward the quantum well 102 is θ, where: 15°≤β≤θ≤90°.

[0054] The valley position of the lattice constant of the first carrier leakage suppression layer 103 a shows an upward trend toward the p-type semiconductor 104 ;

[0055] The valley position of the spontaneous polarization coefficient of the first carrier leakage suppression layer 103 a shows an upward trend toward the p-type semiconductor 104 ;

[0056] Specifically, the rising angle of the valley position of the lattice constant of the first carrier leakage suppression layer 103a toward the p-type semiconductor 104 is σ, and the rising angle of the valley position of the spontaneous polarization coefficient of the first carrier leakage suppression layer 103a toward the p-type semiconductor 104 is ψ, where: 20°≤σ≤ψ≤90°.

[0057] The valley position of the lattice constant of the second carrier leakage suppression layer 103 b shows an upward trend toward the quantum well 102 ;

[0058] The valley position of the spontaneous polarization coefficient of the second carrier leakage suppression layer 103 b shows an upward trend toward the quantum well 102 ;

[0059] Specifically, the rising angle of the valley position of the lattice constant of the second carrier leakage suppression layer 103b toward the quantum well 102 is υ, and the rising angle of the valley position of the spontaneous polarization coefficient of the second carrier leakage suppression layer 103b toward the quantum well 102 is ω, where: 10°≤υ≤ω≤90°.

[0060] The valley position of the lattice constant of the second carrier leakage suppression layer 103 b shows an upward trend toward the p-type semiconductor 104 ;

[0061] The valley position of the spontaneous polarization coefficient of the second carrier leakage suppression layer 103 b shows an upward trend toward the p-type semiconductor 104 ;

[0062] Specifically, the rising angle of the valley position of the lattice constant of the second carrier leakage suppression layer 103b toward the p-type semiconductor 104 is η, and the rising angle of the valley position of the spontaneous polarization coefficient of the second carrier leakage suppression layer 103b toward the p-type semiconductor 104 is ζ, where: 3°≤η≤ζ≤90°.

[0063] More specifically, the descending angle of the peak position of the electron effective mass of the first carrier leakage suppression layer 103a toward the quantum well 102, the rising angle of the valley position of the lattice constant, dielectric constant, and spontaneous polarization coefficient of the first carrier leakage suppression layer 103a toward the quantum well 102, the descending angle of the peak position of the electron effective mass of the first carrier leakage suppression layer 103a toward the p-type semiconductor 104, the rising angle of the valley position of the lattice constant, dielectric constant, and spontaneous polarization coefficient of the first carrier leakage suppression layer 103a toward the p-type semiconductor 104, the The relationship between the descending angle of the peak position of the electron effective mass of the second carrier leakage suppression layer 103 b toward the quantum well 102, the rising angle of the valley position of the lattice constant, dielectric constant, and spontaneous polarization coefficient of the second carrier leakage suppression layer 103 b toward the quantum well 102, the descending angle of the peak position of the electron effective mass of the second carrier leakage suppression layer 103 b toward the p-type semiconductor 104, and the rising angle of the valley position of the lattice constant, dielectric constant, and spontaneous polarization coefficient of the second carrier leakage suppression layer 103 b toward the p-type semiconductor 104 is as follows:

[0064] This embodiment regulates the interface change angle and interface uniformity of the lattice constant and spontaneous polarization coefficient at the interface between the first carrier leakage suppression layer 103a and the quantum well 102, as well as the interface between the second carrier leakage suppression layer 103b and the first carrier leakage suppression layer 103a and the p-type semiconductor 104, thereby regulating the direction and intensity of the interface polarization field, further suppressing the overflow of electrons to the p-type semiconductor 104, thereby improving the efficiency attenuation under large current injection and the thermal attenuation under high temperature conditions, and reducing the efficiency attenuation from 30-50% to 10-30%, and the thermal attenuation from 15-30% to 3-15%.

[0065] In some optional embodiments, the electron effective mass distribution and dielectric constant distribution of the first carrier leakage suppression layer 103a are as follows:

[0066] The electron effective mass of the first carrier leakage suppression layer 103a has the function y1=A+lnx1-Be x1 Curve distribution;

[0067] The dielectric constant of the first carrier leakage suppression layer 103a has the function y2=C+De -x1 +x1-1 curve distribution;

[0068] Here, x1 is the depth from the first carrier leakage suppression layer 103 a to the second carrier leakage suppression layer 103 b .

[0069] In some optional embodiments, the lattice constant distribution and spontaneous polarization coefficient distribution of the first carrier leakage suppression layer 103 a are as follows:

[0070] The lattice constant of the first carrier leakage suppression layer 103a has the function y3=E+Fe -x1 +x1-1 curve distribution;

[0071] The spontaneous polarization coefficient of the first carrier leakage suppression layer 103 a has a first quadrant curve distribution of a function y4=Gx1+1 / 2x1, where G≤A≤E≤C.

[0072] In some optional embodiments, the electron effective mass distribution and dielectric constant distribution of the second carrier leakage suppression layer 103 b are as follows:

[0073] The electron effective mass of the second carrier leakage suppression layer 103b has a curve distribution of function y5=H+lnx2-x2+1;

[0074] The dielectric constant of the second carrier leakage suppression layer 103b has the function y6=J+Kx2e x2 Curve distribution;

[0075] Here, x2 is the depth of the second carrier leakage suppression layer 103 b toward the p-type semiconductor 104 .

[0076] In some optional embodiments, the lattice constant distribution and spontaneous polarization coefficient distribution of the second carrier leakage suppression layer 103 b are as follows:

[0077] The lattice constant of the second carrier leakage suppression layer 103b has the function y7=L+Mx2e x2 Curve distribution;

[0078] The spontaneous polarization coefficient of the second carrier leakage suppression layer 103b has the function y8=N+Px2 2 e x2 The first quadrant curve distribution, where N≤H≤L≤J.

[0079] In some optional embodiments, the first carrier leakage suppression layer 103a and the second carrier leakage suppression layer 103b are any one or any combination of InGaN, InN, AlInN, GaN, AlGaN, AlInGaN, AlN, GaN / AlGaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, GaN / AlInGaN superlattice, AlGaN / AlGaN superlattice, AlGaN / AlInGaN superlattice, GaN / AlGaN / AlN composite structure, and AlGaN / AlN composite structure.

[0080] In some optional embodiments, the quantum well 102 is a periodic structure consisting of well layers and barrier layers.

[0081] Specifically, the well layer of the quantum well 102 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the well layer thickness is 5 angstroms to 200 angstroms.

[0082] The barrier layer of the quantum well 102 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the barrier layer thickness is 10 angstroms to 400 angstroms.

[0083] In some optional embodiments, the n-type semiconductor 101 and the p-type semiconductor 104 include any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the thickness of the n-type semiconductor 101 is 5 angstroms to 60,000 angstroms, and the thickness of the p-type semiconductor 104 is 10 angstroms to 9,000 angstroms.

[0084] In some optional embodiments, the substrate 100 includes sapphire, diamond, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / SiO2 / SiN x Composite substrate, sapphire / SiNx / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x Composite substrate, any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrates.

[0085] Obviously, those skilled in the art may make various changes and modifications to this application without departing from the spirit and scope of this application. Thus, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalents, this application is intended to include these modifications and variations.

Claims

1. A semiconductor light emitting element having a carrier leakage suppression layer, comprising a substrate, an n-type semiconductor, a quantum well, and a p-type semiconductor arranged in order from bottom to top, characterized in that: A carrier leakage suppression layer is provided between the p-type semiconductor and the quantum well, the carrier leakage suppression layer including a first carrier leakage suppression layer and a second carrier leakage suppression layer, the first carrier leakage suppression layer being located below the second carrier leakage suppression layer, and the first carrier leakage suppression layer and the second carrier leakage suppression layer both having electron effective mass distribution characteristics and dielectric constant distribution characteristics; The peak position of the electron effective mass of the first carrier leakage suppression layer has a descending angle α toward the quantum well, and the valley position of the dielectric constant of the first carrier leakage suppression layer has a rising angle γ toward the quantum well, wherein: 15°≤γ≤α≤90°; The peak position of the electron effective mass of the first carrier leakage suppression layer has a descending angle of δ toward the p-type semiconductor, and the valley position of the dielectric constant of the first carrier leakage suppression layer has a rising angle of in: The descending angle of the peak position of the electron effective mass of the second carrier leakage suppression layer toward the quantum well is μ, and the rising angle of the valley position of the dielectric constant of the second carrier leakage suppression layer toward the quantum well is ρ, wherein: 10°≤ρ≤μ≤90°; The peak position of the electron effective mass of the second carrier leakage suppression layer has a descending angle ε toward the p-type semiconductor, and the valley position of the dielectric constant of the second carrier leakage suppression layer has a rising angle κ toward the p-type semiconductor, wherein: 3°≤κ≤ε≤90°.

2. The semiconductor light emitting element having a carrier leakage suppression layer according to claim 1, wherein: The first carrier leakage suppression layer and the second carrier leakage suppression layer also have lattice constant distribution characteristics and spontaneous polarization coefficient distribution characteristics; The rising angle of the valley position of the lattice constant of the first carrier leakage suppression layer toward the quantum well is β, and the rising angle of the valley position of the spontaneous polarization coefficient of the first carrier leakage suppression layer toward the quantum well is θ, wherein: 15°≤β≤θ≤90°; The rising angle of the valley position of the lattice constant of the first carrier leakage suppression layer toward the p-type semiconductor is σ, and the rising angle of the valley position of the spontaneous polarization coefficient of the first carrier leakage suppression layer toward the p-type semiconductor is ψ, wherein: 20°≤σ≤ψ≤90°; The rising angle of the valley position of the lattice constant of the second carrier leakage suppression layer toward the quantum well is υ, and the rising angle of the valley position of the spontaneous polarization coefficient of the second carrier leakage suppression layer toward the quantum well is ω, wherein: 10°≤υ≤ω≤90°; The rising angle of the valley position of the lattice constant of the second carrier leakage suppression layer toward the p-type semiconductor is η, and the rising angle of the valley position of the spontaneous polarization coefficient of the second carrier leakage suppression layer toward the p-type semiconductor is ζ, where: 3°≤η≤ζ≤90°.

3. The semiconductor light emitting element having a carrier leakage suppression layer according to claim 2, wherein: The relationship among the descending angle of the peak position of the electron effective mass of the first carrier leakage suppression layer toward the quantum well, the rising angle of the lattice constant, dielectric constant, and valley position of the spontaneous polarization coefficient of the first carrier leakage suppression layer toward the quantum well, the descending angle of the peak position of the electron effective mass of the first carrier leakage suppression layer toward the p-type semiconductor, the rising angle of the lattice constant, dielectric constant, and valley position of the spontaneous polarization coefficient of the first carrier leakage suppression layer toward the p-type semiconductor, the descending angle of the peak position of the electron effective mass of the second carrier leakage suppression layer toward the quantum well, the rising angle of the lattice constant, dielectric constant, and valley position of the spontaneous polarization coefficient of the second carrier leakage suppression layer toward the quantum well, the descending angle of the peak position of the electron effective mass of the second carrier leakage suppression layer toward the p-type semiconductor, and the rising angle of the lattice constant, dielectric constant, and valley position of the spontaneous polarization coefficient of the second carrier leakage suppression layer toward the p-type semiconductor is as follows:

4. The semiconductor light emitting element having a carrier leakage suppression layer according to claim 3, wherein: The electron effective mass of the first carrier leakage suppression layer has the function y1=A+lnx1-Be x1 Curve distribution, the dielectric constant of the first carrier leakage suppression layer has the function y2=C+De -x1 +x1-1 curve distribution, x1 is the depth from the first carrier leakage suppression layer to the second carrier leakage suppression layer.

5. The semiconductor light emitting element having a carrier leakage suppression layer according to claim 4, wherein: The lattice constant of the first carrier leakage suppression layer has the function y3=E+Fe -x1 +x1-1 curve distribution, the spontaneous polarization coefficient of the first carrier leakage suppression layer has a function y4=Gx1+1 / 2x1 first quadrant curve distribution, wherein G≤A≤E≤C.

6. The semiconductor light emitting element having a carrier leakage suppression layer according to claim 3, wherein: The electron effective mass of the second carrier leakage suppression layer has a curve distribution of function y5=H+lnx2-x2+1; the dielectric constant of the second carrier leakage suppression layer has a function y6=J+Kx2e x2 Curve distribution, x2 is the depth of the second carrier leakage suppression layer toward the p-type semiconductor.

7. The semiconductor light emitting element having a carrier leakage suppression layer according to claim 6, wherein: The lattice constant of the second carrier leakage suppression layer has the function y7=L+Mx2e x2 Curve distribution; The spontaneous polarization coefficient of the second carrier leakage suppression layer has a function y8 = N + Px2 2 e x2 The first quadrant curve distribution, where N≤H≤L≤J.

8. The semiconductor light emitting element having a carrier leakage suppression layer according to claim 1, wherein: The first carrier leakage suppression layer and the second carrier leakage suppression layer are any one or any combination of InGaN, InN, AlInN, GaN, AlGaN, AlInGaN, AlN, GaN / AlGaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, GaN / AlInGaN superlattice, AlGaN / AlGaN superlattice, AlGaN / AlInGaN superlattice, GaN / AlGaN / AlN composite structure, and AlGaN / AlN composite structure.

9. The semiconductor light emitting element having a carrier leakage suppression layer according to claim 1, wherein: The quantum well is a periodic structure composed of a well layer and a barrier layer. The well layer of the quantum well is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond. The thickness of the well layer is 5 angstroms to 200 angstroms; the barrier layer of the quantum well is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the barrier layer thickness is 10 angstroms to 400 angstroms.

10. The semiconductor light emitting element having a carrier leakage suppression layer according to claim 1, wherein: The n-type semiconductor and the p-type semiconductor include any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; the thickness of the n-type semiconductor is 5 angstroms to 60,000 angstroms, and the thickness of the p-type semiconductor is 10 angstroms to 9,000 angstroms; The substrate includes sapphire, diamond, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x Composite substrate, any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrates.

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