Plasma etching device and method

Abstract

The present application relates to the field of semiconductor manufacturing technology, and provides a plasma etching device and method. The plasma etching device includes: a process chamber; a wafer heating device, when the wafer is transferred into the process chamber, the wafer heating device is located above the wafer; the wafer heating device is configured to: before plasma etching, when the process chamber is evacuated, the wafer heating device preheats the wafer until the internal air pressure value of the process chamber is reduced to a preset air pressure value. The plasma etching device can effectively shorten the process cycle and significantly improve the overall production capacity of the machine.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a plasma etching device and method. Background Art

[0002] Plasma etching is a widely used process technology in semiconductor manufacturing. This process usually involves mixing various process gases (such as C x F y , NF3, O2 and Ar, etc.) form plasma under the action of RF excitation, so that the plasma physically bombards and chemically reacts with the wafer surface under the action of the electric field in the process chamber, thereby etching and removing the wafer surface material. In process flows such as dry stripping, the efficiency of the etching process has an important impact on equipment capacity and process effects.

[0003] However, in the traditional plasma etching process, the wafer is usually introduced into the process chamber at room temperature, and then placed on the hot plate in the process chamber before heating. However, due to the limited increase in the wafer temperature, it often takes a long time to reach the temperature required for the process, which directly affects the overall production efficiency of the equipment. This method leads to a reduction in machine production capacity and is unable to meet higher output requirements, especially in large-scale semiconductor manufacturing.

[0004] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present application, and therefore may include information that does not constitute prior art known to ordinary technicians in the field. Summary of the invention

[0005] Based on this, the embodiments of the present application provide a plasma etching device and method, which can effectively shorten the process cycle and significantly improve the overall production capacity of the machine.

[0006] According to some embodiments, the present application provides a plasma etching device, comprising:

[0007] Process chamber;

[0008] A wafer heating device, when the wafer is transferred into the process chamber, the wafer heating device is located above the wafer;

[0009] The wafer heating device is configured to preheat the wafer when the process chamber is evacuated before plasma etching until the internal pressure of the process chamber drops to a preset pressure value.

[0010] In some embodiments, the plasma etching apparatus further comprises:

[0011] A uniform gas grid is connected to the process chamber, and when the wafer is transferred into the process chamber, the uniform gas grid is located above the wafer;

[0012] The wafer heating device is at least partially embedded in the gas uniforming grid.

[0013] In some embodiments, the wafer heating device includes a heating bulb.

[0014] In some embodiments, the plasma etching device further includes: a hot stage for placing the wafer, a wafer ejector pin, and a wafer ejector pin driving mechanism;

[0015] The heating stage and the gas uniforming grid are sequentially arranged in the process chamber from bottom to top, and the heating stage is connected to the process chamber;

[0016] The wafer ejector pin is arranged in the process chamber and on the wafer ejector pin driving mechanism;

[0017] At least part of the wafer ejector pin driving mechanism is disposed in the process chamber.

[0018] In some embodiments, the wafer ejector pin is configured as:

[0019] During the process of preheating the wafer by the wafer heating device, the upper surface of the wafer ejector pin is higher than the upper surface of the heating platform.

[0020] In some embodiments, the heat stage is provided with a wafer ejector pin hole, and at least part of the wafer ejector pins are inserted into the wafer ejector pin hole.

[0021] According to some embodiments, the present application also provides a plasma etching method, comprising the following steps:

[0022] Providing a plasma etching device as provided in some of the above embodiments;

[0023] Transferring the wafer into the process chamber;

[0024] The process chamber is evacuated, and the wafer is preheated using a wafer heating device until the internal air pressure value of the process chamber is reduced to a preset air pressure value;

[0025] Plasma etching is performed.

[0026] In some embodiments, during the preheating of the wafer using the wafer heating device, a target temperature of the wafer is less than a preset process temperature.

[0027] In some embodiments, during the preheating of the wafer using the wafer heating device, a target temperature of the wafer is less than 250°C.

[0028] According to some embodiments, the present application also provides another plasma etching method, comprising the following steps:

[0029] Providing a plasma etching device as provided in some of the above embodiments;

[0030] Transferring the wafer into the process chamber and placing the wafer on the wafer ejector pin;

[0031] The process chamber is evacuated, and the wafer is preheated using a wafer heating device until the internal air pressure value of the process chamber is reduced to a preset air pressure value;

[0032] The wafer ejector pin driving mechanism drives the wafer ejector pin to move downward to place the wafer on the hot stage;

[0033] Plasma etching is performed.

[0034] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application.

[0035] The embodiments of the present application may or at least have the following advantages:

[0036] The present application preheats the wafer by using a wafer heating device located above the wafer after the wafer is transferred to the process chamber and before plasma etching. During the process of exhausting the process chamber, due to the use of the wafer heating device, the wafer temperature can be quickly increased to a value close to the preset process temperature before reaching the preset gas pressure value.

[0037] The present application preheats the wafer during the process chamber exhaust stage, and the preheated wafer can directly enter the plasma etching process without additional heating waiting time. Therefore, the present application can effectively shorten the process cycle and significantly improve the overall production capacity of the machine.

[0038] Since the wafer has reached or is close to the target temperature when entering the process stage, the temperature unevenness is reduced through pre-heating treatment. Therefore, the present application also helps to improve the stability and consistency of the plasma etching process, thereby improving the etching effect and improving the etching accuracy.

[0039] Furthermore, the plasma etching device provided in the present application has a simple structure and is easy to operate. While maintaining high productivity, it also effectively improves the utilization rate of the equipment, so that the manufacturing cost is effectively controlled and is suitable for large-scale production.

[0040] Other advantages, objectives and features of the present application will be described in the following description to some extent, and will be apparent to those skilled in the art based on the following examination and study, or can be taught from the practice of the present application to some extent. The objectives and other advantages of the present application can be achieved and obtained through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Other features, objects and advantages of the present application will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings.

[0042] Figure 1 A schematic diagram of the structure of a plasma etching device provided in some embodiments of the present application;

[0043] Figure 2 A schematic diagram of the structure of a wafer heating device and a uniform gas grid in a plasma etching device provided in some embodiments of the present application;

[0044] Figure 3 A schematic flow chart of a plasma etching method provided in some embodiments of the present application;

[0045] Figure 4 A schematic flow chart of a plasma etching method provided for some other embodiments of the present application.

[0046] Description of reference numerals:

[0047] 101, process chamber; 102, wafer heating device; 103, gas uniformity grid; 103', gas outlet; 104, heating platform; 105, wafer ejector pin; 106, wafer ejector pin driving mechanism; 107, plasma source coil dielectric window; 108, plasma excitation coil; 109, air pumping and uniformity ring; 200, wafer. DETAILED DESCRIPTION

[0048] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0049] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0050] Spatially relative terms such as "below," "above," "upwardly," "downwardly," etc., may be used herein to describe the relationship of a component or feature shown in the figures to other components or features. It should be understood that in addition to the orientations shown in the figures, spatially relative terms also include different orientations of the device in use and operation. For example, if the device in the drawings is turned over, the component or feature described as "below" will be oriented "above" other components or features. Therefore, the exemplary terms "below" and "above" may include both upper and lower orientations. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.

[0051] It should be noted that when a component is considered to be "connected" to another component, it can be directly connected to the other component, or connected to the other component through an intermediate component. In addition, the "connected" in the following embodiments should be understood as "electrically connected", "communicationally connected", etc., if there is transmission of electrical signals or data between the connected objects.

[0052] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" and the like specify the presence of stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. At the same time, the term "and / or" used in this specification includes any and all combinations of the relevant listed items.

[0053] The present application first provides a plasma etching device according to some embodiments. Figure 1 The plasma etching device includes: a process chamber 101 and a wafer heating device 102.

[0054] Regarding the wafer heating device 102, when the wafer 200 is transferred into the process chamber 101, the wafer heating device 102 is located above the wafer 200. Before plasma etching, when the process chamber 101 is evacuated, the wafer 200 can be preheated by the wafer heating device 102 until the internal pressure value of the process chamber 101 is reduced to a preset pressure value.

[0055] The preset air pressure value may be limited to several hundred Pa or even less than a few Pa. For example, the preset air pressure value may be 5×10 -5 Pa, when the internal pressure of the process chamber 101 is reduced to 5×10 -5 Pa or below, the process chamber 101 can be regarded as being in a vacuum state.

[0056] As an example, see Figure 1 The plasma etching device further includes a uniform gas grid 103. By using the uniform gas grid 103, the plasma can be effectively guided to the wafer 200, so that it impacts the material surface of the wafer 200 at a high speed. This process causes the plasma to physically and chemically react with atoms or molecules on the material surface of the wafer 200, thereby achieving a precise etching effect.

[0057] Specifically, if Figure 1 As shown, the gas uniforming grid 103 may be connected to the process chamber 101 . When the wafer 200 is transferred into the process chamber 101 , the gas uniforming grid 103 should be located above the wafer 200 .

[0058] In order to ensure that the etching gas acts evenly on the surface of the wafer 200, Figure 2 As shown, a plurality of through-type gas outlet holes 103' may be provided on the gas uniformity grid 103. When the etching gas fills the process chamber 101, it may diffuse through the gas outlet holes 103' and evenly act on the surface of the wafer 200, thereby achieving a precise etching effect.

[0059] Please continue reading Figure 2 In some embodiments, the wafer heating device 102 may be at least partially embedded in the gas uniforming grid 103 .

[0060] The above-mentioned embodiment embeds the wafer heating device 102 into the uniform gas grid 103, so that the uniform gas grid 103 can not only transmit the airflow and help to evenly distribute the etching gas, but also help the wafer heating device 102 to pre-heat the wafer 200 more evenly, effectively avoiding the heat concentration in a specific area on the surface of the wafer 200, and improving the uniformity of the temperature distribution on the surface of the wafer 200, thereby further improving the consistency of the etching process and the etching accuracy.

[0061] Furthermore, embedding the wafer heating device 102 in the uniform gas grid 103 also reduces the use of additional independent heating equipment, thereby saving space inside the process chamber 101, avoiding increasing the complexity of the equipment, and helping to improve the compactness of the structure of the plasma etching device, reduce manufacturing costs, and simplify the maintenance process. The structural design of the uniform gas grid 103 and the wafer heating device 102 combined into one simplifies the overall layout and installation of the plasma etching device, facilitates rapid maintenance and component replacement of the equipment, and thus helps to improve the reliability and operating efficiency of the equipment.

[0062] The embodiment of the present application does not specifically limit the implementation of the wafer heating device 102, as long as it can realize the function of preheating the wafer 200. In some embodiments, the wafer heating device 102 includes a heating bulb.

[0063] For example, a plurality of heating bulbs may be embedded in the gas uniforming grid 103 to serve as the wafer heating device 102 .

[0064] The heating bulb can quickly raise the temperature of the wafer 200 to the target temperature in a short time and can provide relatively stable and uniform heat. Therefore, it is particularly suitable for preheating the wafer 200 during the vacuum process. It can not only effectively shorten the process preparation time and improve the overall process efficiency, but also maintain the temperature uniformity of the surface of the wafer 200, thereby ensuring the stability of subsequent processes and the consistency of etching quality.

[0065] In addition, the heating bulb has the advantages of low cost, easy purchase and replacement, and the replacement and maintenance of the heating bulb are relatively simple, so using the heating bulb as the wafer heating device 102 also helps to reduce the operation and maintenance costs of the plasma etching device.

[0066] Please continue reading Figure 1 In some embodiments, the plasma etching device further includes: a heat stage 104 for placing the wafer 200 , a wafer ejector pin 105 , and a wafer ejector pin driving mechanism 106 .

[0067] Among them, the hot stage 104 and the uniform gas grid 103 are arranged in sequence from bottom to top in the process chamber 101, and the hot stage 104 is connected to the process chamber 101, and can be used to heat the wafer 200 to a preset process temperature; the wafer ejector pin 105 is arranged in the process chamber 101 and is arranged on the wafer ejector pin driving mechanism 106; at least part of the wafer ejector pin driving mechanism 106 is arranged in the process chamber 101.

[0068] Considering that during the process of evacuating the process chamber 101, the air pressure in the chamber drops rapidly, which may cause the wafer 200 to slide on the hot stage 104. In some embodiments, during the process of preheating the wafer 200 using the wafer heating device 102, the upper surface of the wafer ejector pin 105 is higher than the upper surface of the hot stage 104. In this way, the wafer 200 is lifted upward by the wafer ejector pin 105, which can prevent the wafer 200 from sliding on the hot stage 104 due to the airflow disturbance caused by the evacuation, thereby ensuring the position stability of the wafer 200 during the preheating process and ensuring the process accuracy.

[0069] Furthermore, when the wafer 200 is lifted by the wafer ejector pins 105, the direct contact area between the wafer 200 and the heat stage 104 is reduced, and the heat is mainly transferred to the wafer 200 through the wafer heating device 102, thereby improving the heating efficiency. Therefore, lifting the wafer 200 upward by the wafer ejector pins 105 can also speed up the speed at which the wafer 200 reaches the target temperature, shorten the preheating time, and further improve the process capacity.

[0070] In some embodiments, the heat stage 104 may be provided with a wafer ejector pin hole, and at least part of the wafer ejector pins 105 are inserted into the wafer ejector pin hole.

[0071] The embodiment of the present application does not specifically limit the number of wafer ejector pins 105 in the plasma etching device. As an example, the plasma etching device includes 3 to 6 wafer ejector pins 105, but is not limited thereto. Correspondingly, a corresponding number of wafer ejector pin holes may also be provided on the hot stage 104.

[0072] Exemplarily, the wafer ejector pin driving mechanism 106 includes a driving member such as a cylinder or a motor.

[0073] Furthermore, as an example, Figure 1 As shown, the plasma etching device further includes: a plasma source coil dielectric window 107 , a plasma excitation coil 108 and an air pumping and uniforming ring 109 .

[0074] The material of the plasma source coil dielectric window 107 can be selected from non-metallic materials with insulating properties, such as ceramics, quartz, etc., but is not limited thereto. Figure 1 As shown, an opening may be provided at the upper portion of the process chamber 101 , and the plasma source coil dielectric window 107 may be provided at the opening at the upper portion of the process chamber 101 and be tightly connected to the process chamber 101 .

[0075] The plasma excitation coil 108 can be used to generate a plasma cloud. Figure 1 As shown, the plasma excitation coil 108 may be disposed outside the plasma source coil dielectric window 107 .

[0076] like Figure 1 As shown, the gas extraction and uniform distribution ring 109 is respectively connected to the process chamber 101 and the hot stage 104 to achieve the extraction and uniform distribution of the etching gas.

[0077] Those skilled in the art will understand that Figure 1 and Figure 2 The structure shown in the figure is merely a schematic diagram of a partial structure related to the scheme of the present application, and does not constitute a limitation on the components to which the scheme of the present application is applied. The specific plasma etching device may include more or fewer components than those shown in the figure, or combine certain components, or have a different arrangement of components.

[0078] According to some embodiments, the present application also provides a plasma etching method. Figure 1 , Figure 2 understand Figure 3 The plasma etching method includes the following steps S110~S140.

[0079] S110: Provide a plasma etching device as provided in some of the above embodiments.

[0080] S120 : transferring the wafer 200 into the process chamber 101 .

[0081] S130: evacuate the process chamber 101 and preheat the wafer 200 using the wafer heating device 102 until the internal pressure value of the process chamber 101 drops to a preset pressure value.

[0082] S140: Plasma etching is performed.

[0083] The above-mentioned plasma etching method uses the wafer heating device 102 to preheat the wafer 200 during the process of evacuating the process chamber 101 after the wafer 200 is transferred into the process chamber 101 and before plasma etching is performed, so that the temperature of the wafer 200 can be quickly increased to close to the target temperature before reaching the preset gas pressure value.

[0084] The above plasma etching method preheats the wafer 200 during the exhaust phase of the process chamber 101. The preheated wafer 200 can directly perform plasma etching in step S140 without additional heating waiting time. Therefore, the above plasma etching method can effectively shorten the process cycle and significantly improve the overall productivity of the machine.

[0085] Since the wafer 200 has reached or is close to the target temperature when entering the process stage, the temperature unevenness is reduced through pre-heating treatment. Therefore, the above-mentioned plasma etching method also helps to improve the stability and consistency of the plasma etching process, thereby improving the etching effect and improving the etching accuracy.

[0086] In addition, the above plasma etching method has simple steps and is easy to operate. It can effectively improve the utilization rate of equipment while maintaining high production capacity, so that the manufacturing cost is effectively controlled and is suitable for large-scale production.

[0087] The embodiment of the present application does not specifically limit the size of the target temperature. In some embodiments, during the process of preheating the wafer 200 using the wafer heating device 102 , the target temperature of the wafer 200 is less than the preset process temperature.

[0088] In the above embodiment, by setting the target temperature of the wafer 200 during the preheating process to be lower than the preset process temperature, the surface of the wafer 200 can be prevented from being subjected to excessive thermal shock during the preheating stage, thereby preventing the material from experiencing microcracks, expansion or other thermal stress damage.

[0089] Furthermore, by setting the target temperature of the wafer 200 during the preheating process to be lower than the preset process temperature, heating energy can be saved while ensuring the preheating effect, thereby reducing the overall energy consumption of the equipment, thereby improving energy efficiency and reducing production costs.

[0090] Considering that in a process such as dry stripping, the temperature required for the process is about 250° C. In some embodiments, during the process of preheating the wafer 200 using the wafer heating device 102 , the target temperature of the wafer 200 is less than 250° C.

[0091] In the above embodiment, by limiting the target temperature of the wafer 200 during the preheating process to below 250° C., temperature-sensitive materials in the wafer 200, such as thin film layers, doping layers, etc., can be protected to avoid decomposition, deformation or other structural damage caused by high temperature. At the same time, limiting the target temperature of the wafer 200 during the preheating process to below 250° C. is also beneficial to protecting sensitive circuits and metal interconnect layers, ensuring the structural integrity of the wafer 200 before processing.

[0092] It is understood that the wafer 200 requires strict temperature control during processing to ensure the integrity of each layer of film and microstructure. During the preheating process, if the temperature of the wafer 200 exceeds the target temperature, it may cause overheating on the surface of the wafer 200, thereby affecting the etching or degumming effect. For example, some areas may be over-etched or the reaction rate may increase, resulting in a decrease in the accuracy of the process results.

[0093] Taking this into consideration, in some embodiments, when the wafer 200 reaches a preset target temperature, the wafer heating device 102 can automatically stop heating to ensure that the wafer 200 does not continue to heat up after reaching the required target temperature, thereby avoiding overheating of the wafer 200 during the preheating process, thereby improving the processing accuracy and production yield of the plasma etching method.

[0094] According to some embodiments, the present application also provides another plasma etching method. Figure 1 , Figure 2 understand Figure 4 The plasma etching method includes the following steps S210~S250.

[0095] S210: Provide a plasma etching device as provided in some of the above embodiments.

[0096] S220 : transferring the wafer 200 into the process chamber 101 , and placing the wafer 200 on the wafer ejector pins 105 .

[0097] S230: evacuate the process chamber 101 and preheat the wafer 200 using the wafer heating device 102 until the internal pressure value of the process chamber 101 drops to a preset pressure value.

[0098] S240 : the wafer ejector pin driving mechanism 106 drives the wafer ejector pins 105 to move downward to place the wafer 200 on the heat stage 104 .

[0099] S250: Plasma etching is performed.

[0100] The above-mentioned plasma etching method uses the wafer heating device 102 to preheat the wafer 200 during the process of evacuating the process chamber 101 after the wafer 200 is transferred into the process chamber 101 and before plasma etching is performed, so that the temperature of the wafer 200 can be quickly increased to close to the target temperature before reaching the preset gas pressure value.

[0101] The above plasma etching method preheats the wafer 200 during the exhaust phase of the process chamber 101. The preheated wafer 200 can directly perform plasma etching in step S140 without additional heating waiting time. Therefore, the above plasma etching method can effectively shorten the process cycle and significantly improve the overall productivity of the machine.

[0102] Since the wafer 200 has reached or is close to the target temperature when entering the process stage, the temperature unevenness is reduced through pre-heating treatment. Therefore, the above-mentioned plasma etching method also helps to improve the stability and consistency of the plasma etching process, thereby improving the etching effect and improving the etching accuracy.

[0103] In addition, the above plasma etching method has simple steps and is easy to operate. It can effectively improve the utilization rate of equipment while maintaining high production capacity, so that the manufacturing cost is effectively controlled and is suitable for large-scale production.

[0104] In some embodiments, during the process of placing the wafer 200 on the wafer ejector pins 105 in steps S220 to S230 and preheating the wafer 200 using the wafer heating device 102, the upper surface of the wafer ejector pins 105 can be made higher than the upper surface of the heat stage 104. In this way, the wafer 200 is lifted upward by the wafer ejector pins 105, and the airflow disturbance caused by the exhaust gas can be avoided to cause the wafer 200 to slide on the heat stage 104, thereby ensuring the position stability of the wafer 200 during the preheating process and ensuring the process accuracy.

[0105] Furthermore, when the wafer 200 is lifted by the wafer ejector pins 105, the direct contact area between the wafer 200 and the heat stage 104 is reduced, and the heat is mainly transferred to the wafer 200 through the wafer heating device 102, thereby improving the heating efficiency. Therefore, lifting the wafer 200 upward by the wafer ejector pins 105 can also speed up the speed at which the wafer 200 reaches the target temperature, shorten the preheating time, and further improve the process capacity.

[0106] The following combination Figures 1 to 4 , some possible embodiments of the present application are described and illustrated:

[0107] When the plasma etching device starts processing, the internal pressure of the process chamber 101 is in the atmospheric state, and there is no wafer 200 in the process chamber 101. At this time, the wafer ejector drive mechanism 106 drives the wafer ejector 105 to move downward, so that the upper surface of the wafer ejector 105 is lower than the upper surface of the hot stage 104.

[0108] The wafer 200 is transferred to the process chamber 101 by the transfer robot through the wafer carrier, and the wafer ejector pin driving mechanism 106 drives the wafer ejector pins 105 to move upward, so that the wafer ejector pins 105 lift up the wafer 200 .

[0109] The process chamber 101 is evacuated, and the internal air pressure of the process chamber 101 begins to drop from the atmospheric state. At the same time, the wafer heating device 102 (e.g., a heating bulb) starts to work to preheat the wafer 200. During the process of preheating the wafer 200 using the wafer heating device 102, the target temperature of the wafer 200 is controlled to be lower than the preset process temperature (e.g., 250°C).

[0110] Until the internal air pressure value of the process chamber 101 drops to a preset air pressure value (for example, the process chamber 101 is evacuated to a vacuum), the wafer heating device 102 stops working, and the wafer ejector pin driving mechanism 106 drives the wafer ejector pin 105 to move downward, so that the wafer 200 falls on the hot stage 104, and plasma etching begins until the plasma etching process is completed and the wafer 200 is transferred out of the process chamber 101.

[0111] It should be noted that the plasma etching devices in the embodiments of the present application can all be used to implement the corresponding plasma etching methods. Therefore, the technical features between the method embodiments and the device embodiments can be replaced and supplemented with each other without causing conflicts, so that those skilled in the art can understand the technical content of the present application.

[0112] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features of the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0113] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A plasma etching device, characterized in that: include: Process chamber; A uniform gas grid is connected to the process chamber, and when the wafer is transferred into the process chamber, the uniform gas grid is located above the wafer, and a plurality of through-type gas outlet holes are arranged on the uniform gas grid; A wafer heating device, when the wafer is transferred into the process chamber, the wafer heating device is located above the wafer, and the wafer heating device is at least partially embedded in the uniform gas grid; The wafer heating device is configured to preheat the wafer when the process chamber is evacuated before plasma etching until the internal pressure value of the process chamber is reduced to a preset pressure value; The plasma etching device further comprises: a hot stage for placing the wafer, a wafer ejector pin and a wafer ejector pin driving mechanism; The heating stage and the gas uniforming grid are sequentially arranged in the process chamber from bottom to top, and the heating stage is connected to the process chamber; The wafer ejector pin is disposed in the process chamber and on the wafer ejector pin driving mechanism; the wafer ejector pin is configured such that: during the process of the wafer heating device preheating the wafer, the upper surface of the wafer ejector pin is higher than the upper surface of the heating platform; At least part of the wafer ejector pin driving mechanism is disposed in the process chamber.

2. The plasma etching device according to claim 1, characterized in that: The wafer heating device includes a heating bulb.

3. A plasma etching method, characterized in that: The steps include: Providing a plasma etching device as claimed in claim 1 or 2; Transferring the wafer into the process chamber; The process chamber is evacuated, and the wafer is preheated using a wafer heating device until the internal air pressure value of the process chamber is reduced to a preset air pressure value; Plasma etching is performed.

4. The plasma etching method according to claim 3, characterized in that: During the preheating of the wafer using the wafer heating device, the target temperature of the wafer is lower than a preset process temperature.

5. The plasma etching method according to claim 4, characterized in that: During the preheating of the wafer using the wafer heating device, the target temperature of the wafer is less than 250°C.

6. A plasma etching method, characterized in that: The steps include: Providing a plasma etching apparatus as claimed in any one of claims 1 or 2; Transferring the wafer into the process chamber and placing the wafer on the wafer ejector pin; The process chamber is evacuated, and the wafer is preheated using a wafer heating device until the internal air pressure value of the process chamber is reduced to a preset air pressure value; The wafer ejector pin driving mechanism drives the wafer ejector pin to move downward to place the wafer on the hot stage; Plasma etching is performed.

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