Preparation method of high-hardness and high-wear-resistance carbon self-doped silicon carbide semiconductor film

Abstract

The invention discloses a preparation method of a high-hardness and high-wear-resistance carbon self-doped silicon carbide semiconductor film, and relates to the technical field of semiconductors, cleaning equipment comprises an ultrasonic cleaning tank and a hanging basket matched with the ultrasonic cleaning tank, fixing plates are fixedly connected to the front face and the back face of the ultrasonic cleaning tank, and the fixing plates are fixedly connected to the front face and the back face of the ultrasonic cleaning tank. A mounting plate is fixedly connected to the front face of the ultrasonic cleaning tank, a driving mechanism is arranged on the mounting plate, and a shaking mechanism used in cooperation with the driving mechanism to drive the hanging basket to shake is arranged on the fixing plate. The hanging basket is jacked up and shakes in a reciprocating manner, so that the liquid medicine remaining on the substrate material can be treated, and the pollution to the surrounding environment is reduced when the substrate is taken out.

Description

Technical Field

[0001] The invention belongs to the field of semiconductor technology, and in particular is a method for preparing a carbon self-doped silicon carbide semiconductor film with high hardness and high wear resistance. Background Art

[0002] Silicon carbide is a very hard and wear-resistant material with high wear resistance and high stability. It is widely used in automobiles, thermocouples, and mechanical seals. As a semiconductor material, silicon carbide is a third-generation semiconductor material. With the development of science and technology, the demand for electronic components that can work under extreme conditions is becoming more and more urgent. Therefore, silicon carbide, as a wide bandgap semiconductor material, came into being. In the conventional preparation process, sometimes while paying attention to the semiconductor performance, its wear resistance or conductivity cannot be further adjusted, which to a certain extent limits the further development of wide bandgap semiconductor silicon carbide.

[0003] The preparation of existing semiconductor thin films all uses substrate materials, and the substrate materials need to be cleaned before use. The existing cleaning methods mostly place the substrate materials in a pool filled with chemical solution and use ultrasonic cleaning. When the cleaned substrate materials are taken out, the chemical solution remaining on the substrate materials is likely to drip, which will cause pollution to the surrounding environment. Summary of the invention

[0004] The present invention aims to at least solve the technical problems existing in the prior art; to this end, the present invention proposes a method for preparing a carbon self-doped silicon carbide semiconductor film with high hardness and high wear resistance.

[0005] The purpose of the present invention can be achieved by the following technical solutions: A method for preparing a high-hardness and high-wear-resistant carbon self-doped silicon carbide semiconductor film comprises the following steps: Step 1: Select glass as the substrate material, and use a cleaning device to clean the substrate material, and then use a shaking mechanism to clean the cleaning liquid on the substrate material; Step 2: Use high-purity graphite target as self-doping target material, and start the graphite target accordingly as needed during the whole process; use silicon carbide ceramic target as main sputtering target material, and use high-purity argon as sputtering gas; Step 3: evacuate the sputtering chamber. When the vacuum degree reaches a certain value, start the target. According to the sputtering process requirements, start the main sputtering target and the corresponding doping target accordingly. Step 4: Before formally sputtering, pre-sputtering is first performed, and then the coating process parameters are set to prepare a high-hardness, high-wear-resistant carbon self-doped silicon carbide semiconductor film; after the coating is completed, vacuum annealing is performed at 200°C.

[0006] As a further solution of the present invention: the cleaning equipment includes an ultrasonic cleaning tank and a hanging basket adapted to the ultrasonic cleaning tank, the front and back sides of the ultrasonic cleaning tank are fixedly connected with fixing plates, the front side of the ultrasonic cleaning tank is fixedly connected with a mounting plate, the mounting plate is provided with a driving mechanism, and the fixed plate is provided with a shaking mechanism used in conjunction with the driving mechanism to drive the hanging basket to shake.

[0007] As a further solution of the present invention: the shaking mechanism includes a buckle plate and a first connecting plate fixedly connected to the top of the fixed plate, a bottom plate is slidably connected between the buckle plate and the fixed plate, a second connecting plate is fixedly connected to one side of the bottom plate, a spring is fixedly connected between the second connecting plate and the first connecting plate, and a lifting mechanism for supporting the hanging basket is arranged on the bottom plate.

[0008] As a further solution of the present invention: the lifting mechanism includes a cylinder fixedly connected to the top of the base plate, the output end of the cylinder is fixedly connected to a connecting block, the connecting block is fixedly connected to a fixing frame, and the fixing frame is fixedly connected to a lifting block.

[0009] As a further solution of the present invention: the driving mechanism includes a motor fixedly connected to the top of the mounting plate, the output end of the motor is fixedly connected to a rotating shaft, and the rotating shaft is fixedly connected to a cam used in conjunction with the base plate.

[0010] As a further solution of the present invention: a connecting seat is fixedly connected to one side of the ultrasonic cleaning tank, and the connecting seat is rotatably connected to the rotating shaft.

[0011] As a further solution of the present invention: support bars and card plates are fixedly connected on both sides of the ultrasonic cleaning tank, a baffle is placed on the top of the support bar, the baffle is slidably connected to the card plate and the ultrasonic cleaning tank respectively, and the baffle is connected to the fixed frame through a moving mechanism.

[0012] As a further solution of the present invention: the moving mechanism includes a straight rod fixedly connected to the fixing frame and a protrusion fixedly connected to the baffle, a through hole is penetrated through one side of the protrusion, and the straight rod is slidably connected to the through hole.

[0013] Compared with the prior art, the present invention has the following beneficial effects: (1) The present application can improve the wear resistance and hardness of the silicon carbide film and the conductivity of the film by co-doping the main and auxiliary targets, thereby meeting the use requirements of related components.

[0014] (2) The present application uses the cooperation of the driving mechanism and the shaking mechanism to lift up the hanging basket and shake it back and forth after the substrate is cleaned with ultrasound, so as to treat the liquid medicine remaining on the substrate material and reduce the pollution to the surrounding environment when the substrate is taken out.

[0015] (3) The present application can pull up the baffle when treating the liquid medicine remaining on the substrate material, thereby preventing the liquid medicine from splashing out of the ultrasonic cleaning tank when the hanging basket is shaken. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A perspective view of the present invention; Figure 2 is a three-dimensional diagram of the shaking mechanism of the present invention; Figure 3 For the present invention Figure 2 A partial enlarged view of the middle A; Figure 4 A three-dimensional diagram of an ultrasonic cleaning tank of the present invention; Figure 5 It is a three-dimensional diagram of the baffle of the present invention.

[0017] In the figure: 1. ultrasonic cleaning tank; 2. hanging basket; 3. fixed plate; 4. mounting plate; 5. driving mechanism; 51. motor; 52. rotating shaft; 53. cam; 6. shaking mechanism; 61. buckle plate; 62. first connecting plate; 63. bottom plate; 64. second connecting plate; 65. spring; 66. lifting mechanism; 661. cylinder; 662. connecting block; 663. fixing frame; 664. lifting block; 7. supporting bar; 8. card plate; 9. baffle; 10. moving mechanism; 101. straight rod; 102. protrusion; 103. through hole; 11. connecting seat. DETAILED DESCRIPTION

[0018] The technical solution of the present invention will be clearly and completely described below in conjunction with the embodiments. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0019] Embodiment 1 See also Figure 1-4 As shown, the present application provides a method for preparing a carbon self-doped silicon carbide semiconductor film with high hardness and high wear resistance, comprising the following steps: Step 1: Select glass (silicon wafer, etc.) as the substrate material (ultra-white glass as the substrate material), and use a cleaning device to clean the substrate material, and then use a shaking mechanism 6 to clean the cleaning liquid on the substrate material; Step 2: Use high-purity graphite target as self-doping target material, start graphite target accordingly as needed during the whole process, use silicon carbide ceramic target as main sputtering target material, and use high-purity argon as sputtering gas (use high-purity silicon carbide and graphite as main and auxiliary sputtering targets); Step 3: evacuate the sputtering chamber. When the vacuum degree reaches a certain value, start the target. According to the sputtering process requirements, start the main sputtering target and the corresponding doping target accordingly. Step 4: Before formally sputtering, pre-sputtering is first performed, and then the coating process parameters are set to prepare a high-hardness, high-wear-resistant carbon self-doped silicon carbide semiconductor film. After the coating is completed, vacuum annealing is performed at 200°C.

[0020] The cleaning equipment includes an ultrasonic cleaning tank 1 and a hanging basket 2 adapted to the ultrasonic cleaning tank 1, the hanging basket 2 is used to place a substrate, the front and back sides of the ultrasonic cleaning tank 1 are fixedly connected with a fixing plate 3, the front side of the ultrasonic cleaning tank 1 is fixedly connected with a mounting plate 4, the mounting plate 4 is provided with a driving mechanism 5, and the fixing plate 3 is provided with a shaking mechanism 6 used in conjunction with the driving mechanism 5 to drive the hanging basket 2 to shake.

[0021] The shaking mechanism 6 includes a buckle plate 61 and a first connecting plate 62 fixedly connected to the top of the fixed plate 3, a bottom plate 63 is slidably connected between the buckle plate 61 and the fixed plate 3, a second connecting plate 64 is fixedly connected to one side of the bottom plate 63, a spring 65 is fixedly connected between the second connecting plate 64 and the first connecting plate 62, and a lifting mechanism 66 for supporting the hanging basket 2 is provided on the bottom plate 63. Through the cooperation of the driving mechanism 5 and the shaking mechanism 6, after the substrate is cleaned by ultrasound, the hanging basket 2 is lifted up and reciprocatedly shaken, so that the liquid medicine remaining on the substrate material can be processed, and the pollution to the surrounding environment can be reduced when the substrate is taken out.

[0022] The lifting mechanism 66 includes a cylinder 661 fixedly connected to the top of the base plate 63, the cylinder 661 is electrically connected to an external power supply and controlled by an external control program, the output end of the cylinder 661 is fixedly connected to a connecting block 662, the connecting block 662 is fixedly connected to a fixing frame 663, and the fixing frame 663 is fixedly connected to a lifting block 664.

[0023] The driving mechanism 5 includes a motor 51 fixedly connected to the top of the mounting plate 4. The motor 51 is electrically connected to an external power supply and is controlled by an external control program. The output end of the motor 51 is fixedly connected to a rotating shaft 52. The rotating shaft 52 is fixedly connected to a cam 53 used in conjunction with the bottom plate 63. By turning on the cylinder 661, the fixing frame 663 is lifted through the connecting block 662, and then the hanging basket 2 is lifted through the lifting block 664. After that, the motor 51 is turned on, and then the motor 51 drives the cam 53 to rotate through the rotating shaft 52, so that the cam 53 pushes the bottom plate 63 during the rotation process, and is used in conjunction with the first connecting plate 62, the second connecting plate 64 and the spring 65, so that the bottom plate 63 reciprocates between the buckle plate 61 and the fixed plate 3, thereby driving the cylinder 661 to shake back and forth, and then driving the hanging basket 2 to shake back and forth, so that the liquid medicine remaining on the substrate material can be processed, and the pollution to the surrounding environment can be reduced when the substrate is taken out.

[0024] A connecting seat 11 is fixedly connected to one side of the ultrasonic cleaning tank 1. Since the rotating shaft 52 is relatively long, the connecting seat 11 can be provided to support the rotating shaft 52. The connecting seat 11 is rotatably connected to the rotating shaft 52.

[0025] Embodiment 2 Based on Example 1, see Figure 1 , Figure 2 and Figure 5 shown.

[0026] Support bars 7 and card plates 8 are fixedly connected on both sides of the ultrasonic cleaning tank 1. A baffle 9 is placed on the top of the support bar 7. The baffle 9 is slidably connected to the card plates 8 and the ultrasonic cleaning tank 1 respectively. The baffle 9 is connected to the fixed frame 663 through a moving mechanism 10. When the liquid medicine remaining on the substrate material is processed, the baffle 9 can be pulled up to prevent the liquid medicine from splashing out of the ultrasonic cleaning tank 1 when the hanging basket 2 is shaken.

[0027] The moving mechanism 10 includes a straight rod 101 fixedly connected to the fixing frame 663 and a protrusion 102 fixedly connected to the baffle 9. A through hole 103 is penetrated on one side of the protrusion 102. The straight rod 101 and the through hole 103 are slidably connected. During the lifting process of the hanging basket 2, the baffle 9 is lifted by the straight rod 101 (part of the baffle 9 is still stuck in the clamping plate 8). During the reciprocating shaking of the hanging basket 2, the straight rod 101 slides in the through hole 103 (the straight rod 101 will not detach from the through hole 103), while the baffle 9 remains stationary. Therefore, the baffle 9 can prevent the liquid from splashing out of the ultrasonic cleaning tank 1 when the hanging basket 2 is shaken.

[0028] The working principle of the present invention is: high-purity silicon carbide and graphite are used as the main and auxiliary sputtering targets, and ultra-white glass is used as the substrate material. The glass substrate material is first ultrasonically cleaned according to the conventional method, and then dried and placed in the magnetron sputtering chamber. Both the main and auxiliary targets use a DC power supply. When the vacuum degree in the sputtering chamber reaches 8.0*10 -45 When the sputtering gas argon is introduced at 1.5 Pa, the target material is ignited at the same time, and pre-sputtering is performed, and then the process parameters are adjusted, specifically: the main target power is 100w, the auxiliary target power is 50w, the working gas pressure is maintained at 1.5Pa, the sputtering time is 30min, Ar: 15, and the auxiliary target is turned off at the 29th minute, and finally a carbon self-doped silicon carbide semiconductor film with a silicon carbide surface is obtained. After the film is prepared, it is subjected to a vacuum heat treatment at 200℃ to achieve the uniformity of carbon doping and reduce the internal stress of the film. The performance test of the prepared film shows that the hardness is relatively hard, the wear resistance is very good, and the electrical properties are also within the semi-conductive range, and all properties can be adjusted according to the performance requirements.

[0029] After cleaning the substrate material, the cylinder 661 is turned on to lift the fixing frame 663 through the connecting block 662, and then the hanging basket 2 is lifted through the lifting block 664. Thereafter, the motor 51 is turned on, and the motor 51 drives the cam 53 to rotate through the rotating shaft 52, so that the cam 53 pushes the bottom plate 63 during the rotation, and cooperates with the first connecting plate 62, the second connecting plate 64 and the spring 65, so that the bottom plate 63 reciprocates between the buckle plate 61 and the fixing plate 3, thereby driving the cylinder 661 to shake back and forth, and then driving the hanging basket 2 to shake back and forth, so that the liquid medicine remaining on the substrate material can be processed, and the pollution to the surrounding environment can be reduced when the substrate is taken out. During the lifting process of the hanging basket 2, the baffle 9 is lifted by the straight rod 101 (part of the baffle 9 is still stuck in the clamping plate 8). During the reciprocating shaking of the hanging basket 2, the straight rod 101 slides in the through hole 103 (the straight rod 101 will not detach from the through hole 103), while the baffle 9 remains stationary. Therefore, the baffle 9 can prevent the liquid from splashing out of the ultrasonic cleaning tank 1 when the hanging basket 2 is shaken.

[0030] The above embodiments are only used to illustrate the technical method of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical method of the present invention may be modified or replaced by equivalents without departing from the spirit and scope of the technical method of the present invention.

Claims

1. A method for preparing a carbon self-doped silicon carbide semiconductor film with high hardness and high wear resistance, Features: The following steps are involved: Step 1: Select glass as the substrate material, and use a cleaning device to clean the substrate material, and then use a shaking mechanism (6) to clean the cleaning liquid on the substrate material; Step 2: Use high-purity graphite target as self-doping target material, start the graphite target accordingly according to the need during the whole process, use silicon carbide ceramic target as main sputtering target material, and use high-purity argon as sputtering gas; Step 3: evacuate the sputtering chamber. When the vacuum degree reaches a certain value, start the target. According to the sputtering process requirements, start the main sputtering target and the corresponding doping target accordingly. Step 4: Before formally sputtering, pre-sputtering is first performed, and then the coating process parameters are set to prepare a high-hardness, high-wear-resistant carbon self-doped silicon carbide semiconductor film. After the coating is completed, vacuum annealing is performed at 200°C.

2. A method for preparing a high-hardness and high-wear-resistant carbon self-doped silicon carbide semiconductor film according to claim 1, It is characterized in that The cleaning device comprises an ultrasonic cleaning tank (1) and a hanging basket (2) adapted for the ultrasonic cleaning tank (1), the front and back sides of the ultrasonic cleaning tank (1) are fixedly connected to fixing plates (3), the front side of the ultrasonic cleaning tank (1) is fixedly connected to a mounting plate (4), a driving mechanism (5) is arranged on the mounting plate (4), and the fixing plate (3) is provided with a shaking mechanism (6) used in conjunction with the driving mechanism (5) to drive the hanging basket (2) to shake.

3. A method for preparing a high-hardness and high-wear-resistant carbon self-doped silicon carbide semiconductor film according to claim 2, It is characterized in that The shaking mechanism (6) comprises a gusset plate (61) fixedly connected to the top of the fixing plate (3) and a first connecting plate (62); a bottom plate (63) is slidably connected between the gusset plate (61) and the fixing plate (3); a second connecting plate (64) is fixedly connected to one side of the bottom plate (63); a spring (65) is fixedly connected between the second connecting plate (64) and the first connecting plate (62); and a lifting mechanism (66) for supporting the hanging basket (2) is provided on the bottom plate (63).

4. The method for preparing a high-hardness and high-wear-resistant carbon self-doped silicon carbide semiconductor film according to claim 3, It is characterized in that The lifting mechanism (66) comprises a cylinder (661) fixedly connected to the top of the base plate (63); an output end of the cylinder (661) is fixedly connected to a connecting block (662); a fixing frame (663) is fixedly connected to the connecting block (662); and a lifting block (664) is fixedly connected to the fixing frame (663).

5. The method for preparing a high-hardness and high-wear-resistant carbon self-doped silicon carbide semiconductor film according to claim 2, It is characterized in that The driving mechanism (5) comprises a motor (51) fixedly connected to the top of the mounting plate (4), the output end of the motor (51) being fixedly connected to a rotating shaft (52), and the rotating shaft (52) being fixedly connected to a cam (53) for use with a bottom plate (63).

6. The method for preparing a high-hardness and high-wear-resistant carbon self-doped silicon carbide semiconductor film according to claim 5, It is characterized in that A connecting seat (11) is fixedly connected to one side of the ultrasonic cleaning tank (1), and the connecting seat (11) is rotatably connected to the rotating shaft (52).

7. The method for preparing a high-hardness and high-wear-resistant carbon self-doped silicon carbide semiconductor film according to claim 2, It is characterized in that Support bars (7) and clamping plates (8) are fixedly connected on both sides of the ultrasonic cleaning tank (1); a baffle plate (9) is placed on the top of the support bar (7); the baffle plate (9) is slidably connected to the clamping plate (8) and the ultrasonic cleaning tank (1), respectively; and the baffle plate (9) is connected to the fixed frame (663) via a moving mechanism (10).

8. The method for preparing a high-hardness and high-wear-resistant carbon self-doped silicon carbide semiconductor film according to claim 7, It is characterized in that The moving mechanism (10) comprises a straight rod (101) fixedly connected to a fixing frame (663) and a protrusion (102) fixedly connected to a baffle (9); a through hole (103) is provided through one side of the protrusion (102); and the straight rod (101) is slidably connected to the through hole (103).

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