Display panel, manufacturing method and display device

Abstract

The invention is suitable for the technical field of display, and provides a display panel, a manufacturing method and a display device.A light-emitting functional layer of the display panel is arranged on a first electrode and a pixel definition layer and comprises a uniform area and a thinning area, and the thinning area is located between the edge of the uniform area and the edge of the pixel definition layer; the length L of the thinning area is equal to H (tan alpha-tan (pi / 2-theta)), alpha is an evaporation angle, both alpha and theta are acute angles, H is the thickness of the pixel definition layer, and the units of L and H are the same; and the length L of the thinned region meets at least one of H < = 15000 angstroms, alpha < = 70 degrees and theta < = 35 degrees, so that the thinned region has a relatively small length, and the luminous efficiency and the luminous uniformity of the light-emitting device are ensured.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel, a manufacturing method and a display device. Background Art

[0002] OLED (Organic Light-Emitting Diode) display products are a display technology that uses organic semiconductor materials to emit light under the action of an electric field. They have many advantages such as low power consumption, high brightness, high contrast, and a wide color gamut.

[0003] Of course, existing OLED display products have higher requirements on luminous efficiency and luminous uniformity. Summary of the invention

[0004] The purpose of the embodiments of the present application is to provide a display panel, aiming to provide a solution for improving the luminous efficiency and luminous uniformity of the display panel.

[0005] The embodiment of the present application is implemented as follows: a display panel includes a driving substrate and a plurality of light-emitting devices arranged on the driving substrate; the driving substrate includes a pixel definition layer, the pixel definition layer is provided with a plurality of pixel openings, the pixel definition layer has a slope on a side close to the pixel openings, and the slope has a slope angle θ; the light-emitting device includes a first electrode at least partially exposed in the pixel opening, and a light-emitting function layer arranged on the first electrode and the pixel definition layer;

[0006] The light-emitting functional layer includes a uniform region and a thinned region, the uniform region is located in the middle of the first electrode, and the thinned region is located between the edge of the uniform region and the edge of the pixel definition layer; the length L of the thinned region satisfies the relationship: L≤H(tanα-tan(π / 2-θ)), wherein α is the evaporation angle, α and θ are both acute angles, and H is the thickness of the pixel definition layer; the units of L and H are the same;

[0007] The length L satisfies at least one of the following three items:

[0008] H≤15000 Angstrom; α≤70°; θ≤35°.

[0009] In one embodiment, the material of the pixel definition layer includes an inorganic material;

[0010] Preferably, the material of the pixel definition layer includes an inorganic material, and H≤5000 angstroms;

[0011] Preferably, the material of the pixel definition layer includes an inorganic material, and H≤3000 angstroms. The advantage is that the shielding of the evaporated material is further reduced, and the material of the pixel definition layer is more dense.

[0012] In one embodiment, α≤65°;

[0013] Preferably, α≤60°. The advantage is that the shielding of the evaporated material is further reduced.

[0014] In one embodiment, θ≤30°;

[0015] Preferably, θ≤25°. The advantage is that the shielding of the evaporated material is further reduced.

[0016] In one embodiment, the pixel definition layer includes a first layer and a second layer stacked together, the length of the second layer is less than the length of the first layer, the slope includes a first slope located at an edge of the first layer, and the first slope has a first slope angle θ1; the thinning area is located between the edge of the first slope and the uniform area; the slope angle θ includes the first slope angle θ1; a line connecting an edge point of the second layer and an edge point of the first layer forms an inclination angle γ with the driving substrate, γ<θ1;

[0017] Preferably, the length L satisfies the relationship: L≤H1(tanα-tan(π / 2-θ1)). The advantage is that only the edge portion of the pixel definition layer is thinned, without affecting the thickness and function of the main area.

[0018] In one embodiment, the thickness of the first layer is H1, the thickness of the second layer is H2, H1+H2=H; H1 and H satisfy the relationship: 0.2≤H1 / H≤0.8. The advantage is that it is easy to manufacture the first layer and the second layer.

[0019] In one embodiment, the edge of the second layer has a second slope, and the second slope has a slope angle θ2;

[0020] Preferably, θ2≤50°;

[0021] Preferably, θ1≤35°;

[0022] Preferably, θ1≤30°;

[0023] Preferably, θ2≤θ1. The advantage is that the shielding of the evaporated material is further reduced, and no shielding is formed between the first layer and the second layer.

[0024] In one embodiment, the display panel further comprises an isolation column disposed on the pixel definition layer, the isolation column having a first surface close to the drive substrate and a second surface away from the drive substrate, and a single side length of the pixel definition layer beyond the first surface is greater than or equal to 1.5 microns;

[0025] Preferably, the length of a single side of the second layer beyond the first surface is greater than or equal to 1.5 micrometers. The advantage is that no concave angle is formed between the pixel definition layer and the isolation column, and the deposition of other film layers is not affected.

[0026] A method for manufacturing a display panel, comprising:

[0027] Forming a first electrode: manufacturing a plurality of first electrodes arranged in an array on the driving circuit layer;

[0028] Forming a pixel definition layer: depositing a pixel definition material layer on the first electrode and the driving circuit layer, and depositing an isolation material layer on the pixel definition material layer; etching the isolation material layer and the pixel definition material layer in sequence to form a pixel definition layer and an isolation column located on the pixel definition layer; the pixel definition layer is provided with a pixel opening exposing at least a portion of the first electrode; and

[0029] Forming a light-emitting functional layer: at least in the pixel opening, sequentially depositing a light-emitting functional material layer, a second electrode material layer and a packaging material layer by evaporation, and etching the packaging material layer, the second electrode material layer and the light-emitting functional material layer to obtain a packaging layer, a second electrode and a light-emitting functional layer;

[0030] Wherein, the light-emitting functional layer comprises a uniform region and a thinned region, the uniform region is located in the middle of the first electrode, and the thinned region is located between the edge of the uniform region and the edge of the pixel definition layer;

[0031] The length L of the thinned area satisfies the relationship: L≤H(tanα-tan(π / 2-θ)), wherein α is the evaporation angle, α and θ are both acute angles, H is the thickness of the pixel definition layer; L and H have the same unit; θ is the slope angle of the slope of the pixel definition layer close to the pixel opening;

[0032] Furthermore, the length L satisfies at least one of the following three items:

[0033] H≤15000 Angstrom; α≤70°; θ≤35°.

[0034] In one embodiment, in the step of forming a pixel definition layer: the thickness of the pixel definition material layer is less than or equal to 15000 angstroms;

[0035] Preferably, the material of the pixel definition material layer includes an inorganic material;

[0036] Preferably, θ≤35°;

[0037] Preferably, in the step of forming the pixel definition layer: the pixel definition material layer is patterned by a halftone mask or a grayscale mask, so that the pixel definition layer forms a first layer and a second layer stacked, the length of the second layer is less than the length of the first layer, the first layer has a first slope, and the first slope has a first slope angle θ1; the thinning area is located between the edge of the first slope and the edge of the uniform area; the line between the edge point of the second layer and the edge point of the first layer forms an inclination angle γ with the driving substrate, γ<θ1;

[0038] Preferably, in the step of forming the light-emitting functional layer: the evaporation angle α is ≤ 70°.

[0039] A display device includes the display panel described in the above embodiments, or a display panel manufactured by the manufacturing method described in the above embodiments.

[0040] The display panel, manufacturing method and display device provided by the embodiments of the present application have the following beneficial effects:

[0041] The display panel provided in the embodiment of the present application, its light-emitting functional layer includes a uniform area and a thinned area, the thinned area is located between the edge of the uniform area and the edge of the pixel definition layer, the length L of the thinned area = H (tanα-tan(π / 2-θ)), α is the evaporation angle, α and θ are both acute angles, H is the thickness of the pixel definition layer; L and H have the same unit; the length L of the thinned area satisfies at least one of H≤15000 angstroms, α≤70°, and θ≤35°, therefore, the thinned area has a smaller length, thereby ensuring the luminous efficiency and luminous uniformity of the light-emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0043] Figure 1 is a schematic diagram of the cross-sectional structure of a display panel provided in an embodiment of the present application;

[0044] Figure 2 is a schematic diagram of the structure of a display panel light-emitting device provided in an embodiment of the present application;

[0045] Figure 3 is a schematic diagram of the evaporation process of the display panel provided in an embodiment of the present application;

[0046] Figure 4 This is a structural schematic diagram of a pixel definition layer in a display panel provided in an embodiment of the present application;

[0047] Figure 5 It corresponds to Figure 4 A schematic diagram for calculating the length of the first thinned region of the light emitting device;

[0048] Figure 6 is another structural schematic diagram of a pixel definition layer in a display panel provided in an embodiment of the present application;

[0049] Figure 7 It corresponds to Figure 6 A schematic diagram for calculating the length of the first thinned region of the light emitting device;

[0050] Figure 8 is a flow chart of the steps for manufacturing a display panel provided in an embodiment of the present application;

[0051] Fig. 9 is a specific flow chart of step S2 of manufacturing the display panel provided in an embodiment of the present application;

[0052] Fig.10 is a schematic structural diagram of the display panel corresponding to manufacturing step S22 provided in an embodiment of the present application;

[0053] Fig.11 is a schematic structural diagram of the display panel corresponding to manufacturing step S24 provided in an embodiment of the present application;

[0054] Fig.12 It is a specific flow chart of step S3 of manufacturing the display panel provided in an embodiment of the present application.

[0055] The meanings of the marks in the figure are:

[0056] 100-display panel;

[0057] 3-driving substrate, 31-driving circuit layer;

[0058] 32-pixel definition layer, 320-pixel opening, 321-slope, 325-first layer, 3251-first slope, 326-second layer, 3261-second slope;

[0059] 4-light-emitting device, 41-first electrode, 42-light-emitting functional layer, 421-first uniform region, 422-first thinning region, 423-inclined region, 424-second uniform region, 425-second thinning region, 43-second electrode, 44-encapsulation layer;

[0060] 4R-red light emitting device, 4G-green light emitting device, 4B-blue light emitting device;

[0061] 5-isolation column, 51-isolation body, 52-blocking part;

[0062] 6-evaporation source, 61-crucible, 62-material source, 63-angle limiting plate, 630-plate opening;

[0063] 7-mask, 71-full light-transmitting area, 72-semi-light-transmitting area, 73-opaque area;

[0064] 8-photoresist material layer, 81-full exposure area, 82-half exposure area, 83-unexposed area;

[0065] 9-pixel defines the material layer. DETAILED DESCRIPTION

[0066] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0067] It should be noted that when a component is referred to as being "fixed to" or "disposed on" another component, it may be directly or indirectly fixed or disposed on the other component. When a component is referred to as being "connected to" another component, it may be directly or indirectly connected to the other component. The orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", etc. is based on the orientation or positional relationship shown in the accompanying drawings and is only for the convenience of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation of this patent. The terms "first" and "second" are only used for the convenience of description and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features. "Multiple" means two or more, unless otherwise clearly and specifically defined.

[0068] In order to illustrate the technical solution described in this application, a detailed description is given below in conjunction with specific drawings and embodiments.

[0069] like Figure 1 As shown, the display panel 100 includes a driving substrate 3, a spacer 5 disposed on the driving substrate 3, and a plurality of light-emitting devices 4 disposed on the driving substrate 3. The spacer 5 is connected to each other in a two-dimensional direction and is distributed in a grid shape, defining a plurality of spaces, and each light-emitting device 4 is disposed in the space. That is, the spacer 5 is arranged around the light-emitting device 4. The light-emitting device 4 includes a red light-emitting device 4R, a green light-emitting device 4G, and a blue light-emitting device 4B.

[0070] The composition, preparation, etc. of the isolation column 5 are further described in patent CN118251982A, patent CN202410864269.8, patent PCT / CN2024 / 098407, patent PCT / CN2024 / 102783, patent PCT / CN2024 / 098217, patent PCT / CN2024 / 099419, and patent PCT / CN2024 / 099072, the contents of which are incorporated into this application by reference for reference.

[0071] See also Figure 1 As shown, the light emitting device 4 includes a first electrode 41, a light emitting functional layer 42, and a second electrode 43 sequentially stacked on the driving substrate 3. The first electrode 41 may be an anode, the second electrode 43 may be a cathode, and the light emitting functional layer 42 includes an organic light emitting material layer. More specifically, the light emitting functional layer 42 may include a hole injection layer, a hole transport layer, an electron blocking layer, an organic light emitting material layer, an electron injection layer, an electron transport layer, and a hole blocking layer sequentially stacked on the first electrode 41.

[0072] See also Figure 1 As shown, the driving substrate 3 includes a driving circuit layer 31 and a pixel definition layer 32 disposed on the driving circuit layer 31. The driving circuit layer 31 is composed of multiple metal layers and multiple insulating layers, and the insulating layer is disposed between the metal layers to insulate the two metal layers. The multiple metal layers are used to form the driving circuits of each light-emitting device 4. Of course, the circuits formed on different metal layers can be connected through vias on the insulating layer.

[0073] See also Figure 1 As shown, the driving substrate 3 further includes a pixel definition layer 32 disposed on the driving circuit layer 31, and the pixel definition layer 32 defines a plurality of pixel openings 320, and the pixel openings 320 correspond to the first electrodes 41 one by one, and expose a portion of the first electrodes 41. Each isolation column 5 is respectively disposed on the pixel definition layer 32. It can be understood that the pixel opening 320 can be a portion of the space between the aforementioned isolation columns 5.

[0074] In the following, for the convenience of description, the up-down direction and the left-right direction based on the paper are defined, the up-down direction is also the thickness direction of the driving substrate 3, the direction from the isolation column 5 to the driving substrate 3 is the down direction, and the left-right direction refers to the arrangement direction of the light emitting devices 4. Of course, the light emitting devices 4 are arranged in two dimensions on the driving substrate 3, and only one direction is shown here, that is, a direction parallel to the plane of the driving substrate 3.

[0075] like Figure 1 and Figure 2As shown, the isolation column 5 is generally wide at the top and narrow at the bottom. In addition, the width of the lower end of the isolation column 5 is smaller than the gap between two adjacent pixel openings 320. It can be understood that the gap here refers to the gap between the edges of two adjacent pixel openings 320 that are close to each other, so that part of the pixel definition layer 32 is exposed in the space between the isolation columns 5.

[0076] Each layer structure of the light-emitting functional layer 42 and the second electrode 43 are formed by evaporation on the basis of the isolation column 5. During the evaporation process, the evaporation material will be deposited in the space between the isolation columns 5 and blocked by the isolation columns 5. In this way, the light-emitting functional layer 42 and the second electrode 43 of each light-emitting device 4 are independently arranged between the isolation columns 5.

[0077] like Figure 2 As shown, the first electrode 41 is made before the pixel definition layer 32, and the left and right ends of the first electrode 41 are covered by the pixel definition layer 32. The portion of the first electrode 41 exposed in the pixel opening 320 is used to contact the light-emitting functional layer 42, and only the portion of the first electrode 41 that contacts the light-emitting functional layer 42 can drive the corresponding organic light-emitting material to emit light, or in other words, only the portion of the light-emitting functional layer 42 that contacts the first electrode 41 can emit light. Therefore, in the following description, unless otherwise specified, the first electrode 41 refers to the portion that contacts the light-emitting functional layer 42, and the portion covered by the pixel definition layer 32 is not considered. The portion of the light-emitting functional layer 42 that contacts the first electrode 41 is the effective functional area.

[0078] like Figure 3 As shown, when evaporating each layer structure of the light emitting device 4, the evaporation source 6 moves back and forth in the left and right directions along the surface of the driving substrate 3, and deposits the light emitting functional material and the second electrode material on the surface of the driving substrate 3. In the left and right directions, the evaporation source 6 will reciprocate through each pixel opening 320. In the evaporation source 6, the crucible 61 is used to set the material source 62 ( Figure 3 The crucible 61 is shown in a simplified diagram. An angle limiting plate 63 is provided outside the material source 62 and on the crucible 61. After evaporation, the material is dispersed through the plate opening 630 of the angle limiting plate 63 to form the above-mentioned evaporation cloud. The angle defined by the left and right edges of the evaporation cloud is the evaporation angle α, which is determined by the plate opening 630 of the angle limiting plate and the position of the material source 62 in the angle limiting plate.

[0079] In the third direction, that is, the direction perpendicular to the aforementioned left-right direction and up-down direction, the material source 62 is continuously arranged, the size of the material source 62 is usually larger than the size of the driving substrate 3, and the material source 62 diverges outward through a plurality of nozzles arranged in sequence. In this direction, the angles of the pixel openings 320 at different positions relative to different nozzles are different, so the evaporation source 6 has different evaporation angles for the light-emitting devices 4 at different positions. Therefore, in the embodiment of the present application, only the evaporation angle α of the evaporation source 6 in its moving direction is considered.

[0080] like Figure 3 As shown, in the left-right direction, when the material source 62 is not designed to be centered relative to the opening of the angle limiting plate 63, the left angle α1 of the evaporation cloud is not equal to the right angle α2. When the material source 62 is designed to be centered relative to the opening of the angle limiting plate 63, the left angle α1 of the evaporation cloud is equal to the right angle α2, and both can be used as the evaporation angle α. When the evaporation source 6 moves from left to right, its right angle α2 affects the length of the first thinning area 422 on the left side of the isolation column 5, and its left angle α1 affects the length of the first thinning area 422 on the right side of the isolation column 5, wherein the left and right sides of the isolation column 5 correspond to the right and left sides of the evaporation source 6. Therefore, in the embodiment of the present application, the length of the first thinning zone 422 is not limited to correspond to the left and right sides of the isolation column 5, but is intended to reduce the length of the first thinning zone 422 on at least one side of the isolation column 5, and the evaporation angle α is the left angle α1 or the right angle α2. Optionally, the lengths of the first thinning zones 422 on both sides of the isolation column 5 are reduced, and the evaporation angle α includes the left angle α1 and the right angle α2.

[0081] Please refer to Figure 4 and Figure 5 As shown, since the pixel definition layer 32 has a certain thickness, its upper edge point P will block the deposition of the material, and the straight line X represents the edge of the evaporation cloud. This makes the thickness of the middle part of the light-emitting functional layer 42 and the second electrode 43 relatively uniform, while the left and right ends gradually become thinner. The first electrode 41 can be considered to have a uniform thickness.

[0082] The uneven thickness of the light-emitting functional layer 42 and the second electrode 43 will directly affect the light-emitting efficiency and light-emitting uniformity of the light-emitting device 4. Based on the evaporation sequence, the factors that lead to the uneven thickness of the hole injection layer also lead to the uneven thickness of each subsequent evaporation film, and the factors that lead to the uneven thickness of the light-emitting functional layer 42 also lead to the uneven thickness of the second electrode 43. Therefore, the present application is expected to at least solve the problem of uneven thickness of the light-emitting functional layer 42, or in other words, at least solve the problem of uneven thickness of the hole injection layer located at the bottom layer of the light-emitting functional layer 42.

[0083] As 1 and Figure 2As shown, the embodiment of the present application first provides a display panel 100, wherein the light-emitting functional layer 42 includes a first uniform region 421 disposed in the middle of the first electrode 41 and a first thinned region 422 connected to the periphery of the first electrode 41. The first thinned region 422 starts from the edge of the first uniform region 421 and ends at the lower edge of the pixel definition layer 32, and the thickness of the first thinned region 422 is uneven.

[0084] The “middle part of the first electrode 41 ” mentioned above is not the central part in a strict sense, but may be the approximate middle part. The first thinned area 422 is connected to the edge of the first uniform area 421 , and the first thinned areas 422 on both sides may not be completely symmetrical.

[0085] Specific as Figure 4 and Figure 5 As shown in FIG. 1 , since the pixel opening 320 of the pixel definition layer 32 is formed by a mask and etching process, its edge is generally not vertical, but has a slope 321. When the light-emitting functional layer 42 and the second electrode 43 are deposited in sequence, they are simultaneously formed on the first electrode 41, on the slope 321, and on the upper surface of the pixel definition layer 32. Therefore, as shown in FIG. Figure 1 and Figure 2 As shown, the light emitting function layer 42 is also deposited on the pixel definition layer 32 to ensure that the pixel opening 320 is completely covered.

[0086] like Figure 2 , Figure 4 and Figure 5 As shown, the isolation column 5 includes an isolation body 51 disposed on the pixel definition layer 32, and a blocking portion 52 disposed on the isolation body 51, wherein the upper end size of the isolation body 51 is smaller than the lower end size, and the upper end size of the blocking portion 52 is smaller than the lower end size. The portion of the second electrode 43 disposed on the upper surface of the pixel definition layer 32 may also extend to the isolation body 51 and be connected to the isolation body 51.

[0087] The isolation body 51 is made of a metal material, so the second electrodes 43 can be electrically connected to each other through the isolation body 51. The blocking portion 52 can also be made of a metal material.

[0088] like Figure 2As shown, the light-emitting functional layer 42 includes: an inclined area 423 located on the slope 321 of the pixel definition layer 32, a second uniform area 424 located on the upper surface of the pixel definition layer 32, and a second thinning area 425 on the periphery of the second uniform area 424. The thickness of the second thinning area 425 gradually decreases in the direction away from the first thinning area 422. The inclined area 423 has a uniform film thickness in the direction perpendicular to the slope 321. In the up and down directions, the inclined area 423 partially overlaps with the first thinning area 422, and the overlapping part as a whole exhibits an uneven film thickness. Therefore, in the present application, the first thinning area 422 can still be regarded as the part starting from the edge of the first uniform area 421 and ending at the lower edge of the pixel definition layer 32.

[0089] It should be noted that the uniform film thickness mentioned in the embodiment of the present application refers to the same thickness of the film layer obtained under the same evaporation deposition conditions, which allows the film thickness value to fluctuate within a certain range, and the fluctuation of the value is not caused by the obstruction of the pixel definition layer 32 during the material evaporation deposition process.

[0090] The length of the first thinned region 422 of the light emitting device 4 is determined by the portion of the hole injection layer located at the bottom layer in contact with the first electrode 41 where the thickness is non-uniform.

[0091] Please refer to Figure 4 Figure 5 As shown, the length L of the first thinning area 422 is set to: L≤H(tanα-tan(π / 2-θ)), wherein α is the evaporation angle, θ is the angle of the slope 321 of the pixel definition layer 32, that is, the slope angle, α and θ are both acute angles, H is the thickness of the pixel definition layer 32, and the units of L and H are the same.

[0092] First embodiment

[0093] In the first embodiment of the present application, the length L of the first thinning area 422 is set to: L≤H(tanα-tan(π / 2-θ)), and H≤15000 angstroms. That is, the length L of the first thinning area 422 is set to: L≤15000(tanα-tan(π / 2-θ)), and the unit of L is angstroms. In the embodiment of the present application, by reducing the thickness H of the pixel definition layer 32, the upper edge point P of the pixel definition layer 32 is weakened to block the evaporation cloud.

[0094] In an optional embodiment, the thickness H of the pixel definition layer 32 is less than 15000 angstroms.

[0095] In an optional embodiment, the thickness H of the pixel definition layer 32 is less than or equal to 14000 angstroms.

[0096] In an optional embodiment, the thickness H of the pixel definition layer 32 is less than or equal to 12000 angstroms.

[0097] In an optional embodiment, the thickness H of the pixel definition layer 32 is less than or equal to 10,000 angstroms.

[0098] In an optional embodiment, the thickness H of the pixel definition layer 32 is less than or equal to 8000 angstroms.

[0099] In an optional embodiment, the thickness H of the pixel definition layer 32 is less than or equal to 6000 angstroms.

[0100] In an optional embodiment, the thickness H of the pixel definition layer 32 is less than or equal to 5000 angstroms.

[0101] In an optional embodiment, the thickness H of the pixel definition layer 32 is less than or equal to 4000 angstroms.

[0102] In an optional embodiment, the thickness H of the pixel definition layer 32 is less than or equal to 3000 angstroms.

[0103] In an optional embodiment, the thickness H of the pixel definition layer 32 is less than or equal to 2000 angstroms.

[0104] In an optional embodiment, the thickness H of the pixel definition layer 32 is less than or equal to 1000 angstroms.

[0105] In an optional embodiment, the thickness H of the pixel definition layer 32 is less than or equal to 800 angstroms.

[0106] For example, in a specific embodiment, the thickness H of the pixel definition layer 32 is 15,000 angstroms, 14,500 angstroms, 14,000 angstroms, 13,000 angstroms, 12,000 angstroms, 11,000 angstroms, 10,000 angstroms, 9,000 angstroms, 8,000 angstroms, 7,000 angstroms, 6,000 angstroms, 5,000 angstroms, 4,500 angstroms, 4,000 angstroms, 3,500 angstroms, 3,000 angstroms, 2,500 angstroms, 2,000 angstroms, 1,500 angstroms, 1,000 angstroms, 900 angstroms or 800 angstroms.

[0107] The material of the pixel definition layer 32 may be an inorganic material or an organic material.

[0108] In one embodiment, the material of the pixel definition layer 32 includes an inorganic material.

[0109] Compared with organic materials, inorganic materials have denser structures, lower water vapor content, can isolate water vapor from the driving substrate 3 side, have stable chemical properties, and have little effect on the electrical characteristics of the light-emitting device 4. Therefore, the thickness H of the pixel definition layer 32 of inorganic materials can be further reduced.

[0110] In one embodiment, the material of the pixel definition layer 32 includes at least one of silicon oxide, silicon nitride, and silicon oxynitride.

[0111] In one embodiment, the material of the pixel definition layer 32 includes an inorganic material, and the thickness of the pixel definition layer 32 is less than or equal to 5000 angstroms.

[0112] In an optional embodiment, the material of the pixel definition layer 32 includes an inorganic material, and the thickness H of the pixel definition layer 32 is less than or equal to 4500 angstroms.

[0113] In an optional embodiment, the material of the pixel definition layer 32 includes an inorganic material, and the thickness H of the pixel definition layer 32 is less than or equal to 4000 angstroms.

[0114] In an optional embodiment, the material of the pixel definition layer 32 includes an inorganic material, and the thickness H of the pixel definition layer 32 is less than or equal to 3500 angstroms.

[0115] In an optional embodiment, the material of the pixel definition layer 32 includes an inorganic material, and the thickness H of the pixel definition layer 32 is less than or equal to 3000 angstroms.

[0116] In an optional embodiment, the material of the pixel definition layer 32 includes an inorganic material, and the thickness H of the pixel definition layer 32 is less than or equal to 2500 angstroms.

[0117] In an optional embodiment, the material of the pixel definition layer 32 includes an inorganic material, and the thickness H of the pixel definition layer 32 is less than or equal to 2000 angstroms.

[0118] In an optional embodiment, the material of the pixel definition layer 32 includes an inorganic material, and the thickness H of the pixel definition layer 32 is less than or equal to 1500 angstroms.

[0119] In an optional embodiment, the material of the pixel definition layer 32 includes an inorganic material, and the thickness H of the pixel definition layer 32 is less than or equal to 1000 angstroms.

[0120] For example, in a specific embodiment, the material of the pixel definition layer 32 includes an inorganic material, and the thickness H of the pixel definition layer 32 is 5000 angstroms, 4500 angstroms, 4000 angstroms, 3500 angstroms, 3000 angstroms, 2500 angstroms, 2000 angstroms, 1500 angstroms, 1000 angstroms, 900 angstroms or 800 angstroms, etc.

[0121] In one embodiment, the pixel definition layer 32 is manufactured by chemical vapor deposition.

[0122] In an optional embodiment, the pixel definition layer 32 is manufactured by atomic layer deposition. The pixel definition layer 32 manufactured by atomic layer deposition has a more compact structure, so its thickness H can be further reduced.

[0123] In an optional embodiment, the pixel definition layer 32 is an inorganic material layer and is manufactured by atomic layer deposition, and the thickness H of the pixel definition layer 32 is less than or equal to 3000 angstroms.

[0124] In an optional embodiment, the pixel definition layer 32 is an inorganic material layer and is manufactured by atomic layer deposition, and the thickness H of the pixel definition layer 32 is less than or equal to 2500 angstroms.

[0125] In an optional embodiment, the pixel definition layer 32 is an inorganic material layer and is manufactured by atomic layer deposition, and the thickness H of the pixel definition layer 32 is less than or equal to 2000 angstroms.

[0126] In an optional embodiment, the pixel definition layer 32 is an inorganic material layer and is manufactured by atomic layer deposition, and the thickness H of the pixel definition layer 32 is less than or equal to 1500 angstroms.

[0127] In an optional embodiment, the pixel definition layer 32 is an inorganic material layer and is manufactured by atomic layer deposition, and the thickness H of the pixel definition layer 32 is less than or equal to 1000 angstroms.

[0128] In an optional embodiment, the pixel definition layer 32 is an inorganic material layer and is manufactured by atomic layer deposition, and the thickness H of the pixel definition layer 32 is less than or equal to 900 angstroms.

[0129] In an optional embodiment, the pixel definition layer 32 is an inorganic material layer and is manufactured by atomic layer deposition, and the thickness H of the pixel definition layer 32 is less than or equal to 800 angstroms.

[0130] Second embodiment

[0131] In the second embodiment of the present application, the length L of the first thinning zone 422 is set to: L≤H(tanα-tan(π / 2-θ)), and α≤70°. That is, L≤H(tan70°-tan(π / 2-θ)). In this embodiment, the length of the first thinning zone 422 is reduced by reducing the evaporation angle α.

[0132] In an optional embodiment, the evaporation angle α is less than or equal to 65°.

[0133] In an optional embodiment, the evaporation angle α is less than or equal to 60°.

[0134] In addition, in order to ensure that the evaporated material can completely cover the pixel definition layer 32 and avoid the problem of incomplete coverage in the pixel opening 320, the evaporated angle α is also set to be greater than or equal to 50°.

[0135] In an optional embodiment, the evaporation angle α is less than or equal to 55°.

[0136] In a specific embodiment, the evaporation angle α is 70 degrees, 69 degrees, 68 degrees, 67 degrees, 66 degrees, 65 degrees, 64 degrees, 63 degrees, 62 degrees, 61 degrees, 60 degrees, 59 degrees, 58 degrees, 57 degrees, 56 degrees, 55 degrees, 54 degrees, 53 degrees, 52 degrees, 51 degrees or 50 degrees.

[0137] Third embodiment

[0138] In the third embodiment of the present application, the length L of the first thinned area 422 is set to: L≤H(tanα-tan(π / 2-θ)), and θ≤35°. That is, L≤H(tanα-tan(π / 2-35°)).

[0139] In this embodiment, by reducing the slope angle θ of the pixel definition layer 32 , the barrier of the upper edge point P of the pixel definition layer 32 to the evaporated material is reduced, thereby making the evaporated material deposited on the first electrode 41 as uniformly as possible.

[0140] In an optional embodiment, the slope angle θ is less than or equal to 30 degrees.

[0141] In an optional embodiment, the slope angle θ is less than or equal to 25 degrees.

[0142] In an optional embodiment, the slope angle θ is less than or equal to 20 degrees.

[0143] In a specific embodiment, the slope angle θ is 35°, 34°, 33°, 32°, 31°, 30°, 29°, 28°, 27°, 26°, 25°, 24°, 23°, 22°, 21° or 20°.

[0144] The pixel opening 320 of the pixel definition layer 32 is formed by at least one photomask and etching process, specifically, by a photomask and dry etching process. In one embodiment, the slope angle θ of the pixel definition layer 32 can be adjusted by controlling the process parameters of the dry etching.

[0145] Fourth embodiment

[0146] Next, see Figure 6 and Figure 7 As shown, in one embodiment, the edge of the pixel definition layer 32 near the pixel opening 320 is stepped. At this time, the pixel definition layer 32 includes a first layer 325 arranged on the first electrode 41 and a second layer 326 arranged on the first layer 325. The edge of the second layer 326 is retracted relative to the edge of the first layer 325, and the lower edge of the first layer 325 still defines the effective area of ​​the light-emitting functional layer 42, that is, defines the length of the first thinning area 422.

[0147] The edges of the first layer 325 and the second layer 326 are both inclined, and may be formed during the dry etching process of the pixel definition layer 32. The first layer 325 has a first slope 3251 having a first slope angle θ1, and the second layer 326 has a second slope 3261 having a second slope angle θ2.

[0148] Moreover, in this embodiment, the line between the upper edge point F of the second layer 326 and the upper edge point G of the first layer 325 has an inclination angle γ relative to the surface of the driving substrate 3, and the inclination angle γ is smaller than the slope angle θ1 of the first layer 325. The inclination angle γ is an acute angle.

[0149] The purpose of such setting is that the inclination angle γ is smaller than the first slope angle θ1 of the first layer 325, so that the extension line of the first slope 3251 of the first layer 325 and the extension line of the upper surface of the second layer 326 form an intersection Q. The upper edge point F of the second layer 326 is located on the side of the intersection Q close to the isolation column 5, so the upper edge F of the second layer 326 will not block the deposition of the evaporation material. At this time, only the upper edge point G of the first layer 325 blocks the deposition of the evaporation material.

[0150] The sum of the thickness H1 of the first layer 325 and the thickness H2 of the second layer 326 is the thickness H of the pixel definition layer 32, and the thickness H1 of the first layer 325 is less than the thickness H of the pixel definition layer 32. The portion of the pixel definition layer 32 that affects the length L of the first thinned area 422 is thinned, thereby reducing the length of the first thinned area 422. This is the same as the working principle of the first embodiment. In other words, the upper edge point P of the original pixel definition layer 32 is lowered to the intersection Q.

[0151] In other words, this is equivalent to that when the first slope angle θ1 is equal to the slope angle θ, the thickness H of the pixel definition layer 32 is reduced to H1. The straight line X' represents the edge of the evaporation cloud at this time.

[0152] In this embodiment, the thickness H, material, preparation method, etc. of the pixel definition layer 32 may refer to the first embodiment described above and will not be described in detail.

[0153] In one embodiment, the thickness H1 of the first layer 325 and the thickness H of the pixel definition layer 32 satisfy the relationship: 0.2≤H1 / H≤0.8. The specific ratio of H1 / H needs to be determined in combination with the difficulty of manufacturing the first layer 325 and the shielding of the evaporated material.

[0154] In one embodiment, the thickness H1 of the first layer 325 and the thickness H of the pixel definition layer 32 satisfy the relationship: 0.3≤H1 / H≤0.7.

[0155] In one embodiment, the thickness H1 of the first layer 325 and the thickness H of the pixel definition layer 32 satisfy the relationship: 0.4≤H1 / H≤0.6.

[0156] In a specific embodiment, the ratio H1 / H of the thickness H1 of the first layer 325 to the thickness H of the pixel definition layer 32 is 0.2, 0.25, 0.3, 0.35, 0.4, 0.45, 0.5, 0.55, 0.6, 0.66, 0.7, 0.75, 0.8, etc.

[0157] The first slope angle θ1 is less than or equal to 35°.

[0158] In one embodiment, by further reducing the first slope angle θ1, the length L of the first thinned area 422 can be further reduced. The slope angle of the portion of the pixel definition layer 32 that affects the length L of the first thinned area 422 is reduced, which is the same as the working principle of the third embodiment and will not be repeated.

[0159] In an optional embodiment, the first slope angle θ1 is less than or equal to 30 degrees.

[0160] In an optional embodiment, the first slope angle θ1 is less than or equal to 25 degrees.

[0161] In an optional embodiment, the first slope angle θ1 is less than or equal to 20 degrees.

[0162] In a specific embodiment, the first slope angle θ1 is 35°, 34°, 33°, 32°, 31°, 30°, 29°, 28°, 27°, 26°, 25°, 24°, 23°, 22°, 21° or 20°.

[0163] The magnitude of the second slope angle θ2 mainly affects the continuity of the second electrode 43 above the pixel definition layer 32 and on the slope 321 of the pixel definition layer 32. In one embodiment, the second slope angle θ2 is less than or equal to 50 degrees.

[0164] In one embodiment, the second slope angle θ2 is less than or equal to 45 degrees.

[0165] In one embodiment, the second slope angle θ2 is less than or equal to 40 degrees.

[0166] In an optional embodiment, the second slope angle θ2 is less than or equal to 35 degrees.

[0167] In an optional embodiment, the second slope angle θ2 is less than or equal to 25 degrees.

[0168] In an optional embodiment, the second slope angle θ2 is less than or equal to 20 degrees.

[0169] In a specific embodiment, the second slope angle θ2 is 50°, 49°, 48°, 47°, 46°, 45°, 44°, 43°, 42°, 41°, 40°, 39°, 38°, 37°, 36°, 35°, 34°, 33°, 32°, 31°, 30°, 29°, 28°, 27°, 26°, 25°, 24°, 23°, 22°, 21° or 20°.

[0170] The first slope angle θ1 and the second slope angle θ2 may be equal or different.

[0171] Optionally, the second slope angle θ2 is less than or equal to the first slope angle θ1. The purpose of this arrangement is to avoid the formation of deposition shielding between the first slope 3251 and the second slope 3261 of the pixel definition layer 32, and at least ensure that the light-emitting functional layer 42 and the second electrode 43 on the first slope 3251 and the second slope 3261 are continuous and have a relatively uniform film thickness.

[0172] See also Figure 6 As shown, an isolation column 5 is provided on the second layer 326, and the length of the lower end of the isolation column 5 is smaller than the length of the second layer 326, so that the upper edge points F on both sides of the second layer 326 are located outside the isolation column 5. In this way, the isolation column 5 can be formed on the relatively flat upper surface of the second layer 326, and the problem of forming a concave angle between the isolation column 5 and the second layer 326 is avoided.

[0173] In one embodiment, the lower end of the isolation column 5 has a first surface close to the driving substrate 3, and the upper end has a second surface away from the driving substrate 3. The length of a single side of the pixel definition layer 32 beyond the first surface is greater than or equal to 1.5 micrometers.

[0174] Optionally, the length of a single side of the pixel definition layer 32 beyond the first surface is greater than or equal to 2 micrometers.

[0175] In one embodiment, the difference between the length of the second layer 326 and the length of the lower end of the isolation column 5 is greater than or equal to 3 microns, which is equivalent to that the single side length of the second layer 326 beyond the first surface of the isolation column 5 is greater than or equal to 1.5 microns.

[0176] In an optional embodiment, the single side length of the second layer 326 extending beyond the first surface of the isolation column 5 is greater than or equal to 2 micrometers.

[0177] In one embodiment, the length of a single side of the first layer 325 beyond the second layer 326 is greater than or equal to 1 micrometer.

[0178] In an optional embodiment, the single side length of the first layer 325 beyond the second layer 326 is greater than or equal to 1.5 micrometers.

[0179] See also Figure 8As shown, the embodiment of the present application further provides a method for manufacturing a display panel 100, including:

[0180] Step S1, forming the first electrode 41: manufacturing a plurality of first electrodes 41 arranged in an array on the driving circuit layer 31;

[0181] Step S2, forming a pixel definition layer 32: depositing a pixel definition material layer 9 on the first electrode 41 and the driving circuit layer 31, and depositing an isolation material layer on the pixel definition material layer 9; etching the isolation material layer and the pixel definition material layer 9 in sequence to form a pixel definition layer 32 and an isolation column 5 located on the pixel definition layer 32; the pixel definition layer 32 is provided with a pixel opening 320, and the pixel opening 320 exposes at least a portion of the first electrode 41;

[0182] And step S3, forming the light-emitting functional layer 42: sequentially evaporating and depositing a light-emitting functional material layer, a second electrode material layer and a packaging material layer in the pixel opening 320, and etching the second electrode material layer and the packaging material layer to obtain a second electrode 43, a light-emitting functional layer 42 and a packaging layer 44.

[0183] In step S3, each light-emitting functional material is placed in the evaporation source 6, and the evaporation source 6 moves uniformly in the left and right directions along the surface of the driving substrate 3 to evaporate and deposit each light-emitting functional material in sequence in the pixel opening 320. The evaporation source 6 has an evaporation angle α.

[0184] See also Fig.12 As shown, step S3 specifically includes:

[0185] Step S31, at least in the pixel opening 320, a red light-emitting material layer, a second electrode material layer and a packaging material layer are sequentially deposited by vapor deposition, and the second electrode material layer and the packaging material layer are etched to obtain a red light-emitting device 4R and its packaging layer 44; step S32, at least in the pixel opening 320, a green light-emitting material layer, a second electrode material layer and a packaging material layer are sequentially deposited by vapor deposition, and the second electrode material layer and the packaging material layer are etched to obtain a green light-emitting device 4G and its packaging layer 44; step S33, at least in the pixel opening 320, a blue light-emitting material layer, a second electrode material layer and a packaging material layer are sequentially deposited by vapor deposition, and the second electrode material layer and the packaging material layer are etched to obtain a blue light-emitting device 4B and its packaging layer 44.

[0186] Fifth embodiment

[0187] In step S2, the thickness of the deposited pixel definition material layer 9 is less than or equal to 15000 angstroms. The thickness H of the obtained pixel definition layer 32 is less than or equal to 15000 angstroms.

[0188] In an optional embodiment, the thickness of the deposited pixel definition material layer 9 is less than 15000 angstroms.

[0189] In an optional embodiment, the thickness of the deposited pixel definition material layer 9 is less than or equal to 14000 angstroms.

[0190] In an optional embodiment, the thickness of the deposited pixel definition material layer 9 is less than or equal to 12000 angstroms.

[0191] In an optional embodiment, the thickness of the deposited pixel definition material layer 9 is less than or equal to 10000 angstroms.

[0192] In an optional embodiment, the thickness of the deposited pixel definition material layer 9 is less than or equal to 8000 angstroms.

[0193] In an optional embodiment, the thickness of the deposited pixel definition material layer 9 is less than or equal to 6000 angstroms.

[0194] In an optional embodiment, the thickness of the deposited pixel definition material layer 9 is less than or equal to 5000 angstroms.

[0195] In an optional embodiment, the thickness of the deposited pixel definition material layer 9 is less than or equal to 4000 angstroms.

[0196] In an optional embodiment, the thickness of the deposited pixel definition material layer 9 is less than or equal to 3000 angstroms.

[0197] In an optional embodiment, the thickness of the deposited pixel definition material layer 9 is less than or equal to 2000 angstroms.

[0198] In an optional embodiment, the thickness of the deposited pixel definition material layer 9 is less than or equal to 1000 angstroms.

[0199] In an optional embodiment, the thickness of the deposited pixel definition material layer 9 is less than or equal to 800 angstroms.

[0200] For example, in a specific embodiment, the thickness of the deposited pixel definition material layer 9 is 15000 angstroms, 14500 angstroms, 14000 angstroms, 13000 angstroms, 12000 angstroms, 11000 angstroms, 10000 angstroms, 9000 angstroms, 8000 angstroms, 7000 angstroms, 6000 angstroms, 5000 angstroms, 4500 angstroms, 4000 angstroms, 3500 angstroms, 3000 angstroms, 2500 angstroms, 2000 angstroms, 1500 angstroms, 1000 angstroms, 900 angstroms or 800 angstroms.

[0201] The material of the deposited pixel definition material layer 9 may be an inorganic material or an organic material.

[0202] In one embodiment, the material of the deposited pixel definition material layer 9 includes an inorganic material.

[0203] Compared with organic materials, inorganic materials have denser structures, lower water vapor content, can isolate water vapor from the driving substrate 3 side, have stable chemical properties, and have little effect on the electrical characteristics of the light emitting device 4. Therefore, the thickness of the pixel definition layer 32 of inorganic materials can be further reduced.

[0204] In one embodiment, the material of the deposited pixel definition material layer 9 includes at least one of silicon oxide, silicon nitride, and silicon oxynitride.

[0205] In one embodiment, the material of the deposited pixel definition material layer 9 includes an inorganic material, and the thickness of the pixel definition layer 32 is less than or equal to 5000 angstroms.

[0206] In an optional embodiment, the material of the deposited pixel definition material layer 9 includes an inorganic material, and the thickness of the pixel definition layer 32 is less than or equal to 4500 angstroms.

[0207] In an optional embodiment, the material of the deposited pixel definition material layer 9 includes an inorganic material, and the thickness of the pixel definition layer 32 is less than or equal to 4000 angstroms.

[0208] In an optional embodiment, the material of the pixel definition layer 32 includes an inorganic material, and the thickness of the pixel definition layer 32 is less than or equal to 3500 angstroms.

[0209] In an optional embodiment, the material of the deposited pixel definition material layer 9 includes an inorganic material, and the thickness of the pixel definition layer 32 is less than or equal to 3000 angstroms.

[0210] In an optional embodiment, the material of the deposited pixel definition material layer 9 includes an inorganic material, and the thickness of the pixel definition layer 32 is less than or equal to 2500 angstroms.

[0211] In an optional embodiment, the material of the pixel definition material layer 9 includes an inorganic material, and the thickness of the pixel definition material layer 9 is less than or equal to 2000 angstroms.

[0212] In an optional embodiment, the material of the deposited pixel definition material layer 9 includes an inorganic material, and the thickness of the pixel definition layer 32 is less than or equal to 1500 angstroms.

[0213] In an optional embodiment, the material of the deposited pixel definition material layer 9 includes an inorganic material, and the thickness of the pixel definition layer 32 is less than or equal to 1000 angstroms.

[0214] For example, in a specific embodiment, the material of the deposited pixel definition material layer 9 includes an inorganic material, and the thickness of the deposited pixel definition material layer 9 is 5000 angstroms, 4500 angstroms, 4000 angstroms, 3500 angstroms, 3000 angstroms, 2500 angstroms, 2000 angstroms, 1500 angstroms, 1000 angstroms, 900 angstroms or 800 angstroms, etc.

[0215] In one embodiment, in step S2, the pixel definition material layer 9 is manufactured by chemical vapor deposition.

[0216] In an optional embodiment, in step S2, the pixel definition material layer 9 is manufactured by atomic layer deposition. The pixel definition layer 32 manufactured by atomic layer deposition has a more compact structure, so its thickness can be further reduced.

[0217] In an optional embodiment, the pixel definition material layer 9 is an inorganic material layer and is manufactured by atomic layer deposition. The thickness of the pixel definition material layer 9 is less than or equal to 3000 angstroms.

[0218] In an optional embodiment, the pixel definition material layer 9 is an inorganic material layer and is manufactured by atomic layer deposition. The thickness of the pixel definition material layer 9 is less than or equal to 2500 angstroms.

[0219] In an optional embodiment, the pixel definition material layer 9 is an inorganic material layer and is manufactured by atomic layer deposition. The thickness of the pixel definition material layer 9 is less than or equal to 2000 angstroms.

[0220] In an optional embodiment, the pixel definition material layer 9 is an inorganic material layer and is manufactured by atomic layer deposition. The thickness of the pixel definition material layer 9 is less than or equal to 1500 angstroms.

[0221] In an optional embodiment, the pixel definition material layer 9 is an inorganic material layer and is manufactured by atomic layer deposition. The thickness of the pixel definition material layer 9 is less than or equal to 1000 angstroms.

[0222] In an optional embodiment, the pixel definition material layer 9 is an inorganic material layer and is manufactured by atomic layer deposition. The thickness of the pixel definition material layer 9 is less than or equal to 900 angstroms.

[0223] In an optional embodiment, the pixel definition material layer 9 is an inorganic material layer and is manufactured by atomic layer deposition, and the thickness of the pixel definition material layer 9 is less than or equal to 800 angstroms.

[0224] Sixth embodiment

[0225] like Fig. 9 , Fig.10 and Fig.11 As shown, in step 2, the pixel definition material layer 9 is etched to obtain a pixel definition layer 32, which includes a first layer 325 disposed on the first electrode 41 and a second layer 326 disposed on the first layer 325. The edge of the second layer 326 is retracted relative to the edge of the first layer 325, and the lower edge of the first layer 325 still defines the effective area of ​​the light-emitting functional layer 42, that is, defines the edge of the first thinned area 422. The first slope 3251 of the first layer 325 has a first slope angle θ1, and the second slope 3261 of the second layer 326 has a second slope angle θ2.

[0226] Also, please refer to the above Figure 6 and Figure 7 The line between the upper edge point F of the second layer 326 and the upper edge point G of the first layer 325 has an inclination angle γ relative to the surface of the driving substrate 3 , and the inclination angle γ is smaller than the slope angle θ1 of the first layer 325 .

[0227] The inclination angle γ is smaller than the slope angle θ1 of the first layer 325, so that the extension line of the first slope 3251 of the first layer 325 and the extension line of the upper surface of the second layer 326 form an intersection Q. The upper edge point F of the second layer 326 is located on the side of the intersection Q close to the isolation column 5, so in step S3, the upper edge point F of the second layer 326 will not block the deposition of the evaporation material. At this time, only the upper edge point G of the first layer 325 blocks the deposition of the evaporation material.

[0228] The thickness H, material, preparation method, etc. of the pixel definition layer 32 may all refer to the aforementioned first embodiment and will not be described in detail.

[0229] The first layer 325 has a thickness H1 , and the second layer 326 has a thickness H2 .

[0230] In one embodiment, the thickness H1 of the first layer 325 and the thickness H of the pixel definition layer 32 satisfy the relationship: 0.2≤H1 / H≤0.8. The specific ratio of H1 / H needs to be determined in combination with the difficulty of manufacturing the first layer 325 and the shielding of the evaporated material.

[0231] In one embodiment, the thickness H1 of the first layer 325 and the thickness H of the pixel definition layer 32 satisfy the relationship: 0.3≤H1 / H≤0.7.

[0232] In one embodiment, the thickness H1 of the first layer 325 and the thickness H of the pixel definition layer 32 satisfy the relationship: 0.4≤H1 / H≤0.6.

[0233] In a specific embodiment, the ratio H1 / H of the thickness H1 of the first layer 325 to the thickness H of the pixel definition layer 32 is 0.2, 0.25, 0.3, 0.35, 0.4, 0.45, 0.5, 0.55, 0.6, 0.66, 0.7, 0.75, 0.8, etc.

[0234] In one embodiment, by further reducing the first slope angle θ1, the length of the first thinned area 422 can be further reduced. The slope angle of the portion of the pixel definition layer 32 that affects the length of the first thinned area 422 is reduced, which is the same as the working principle of the third embodiment and will not be repeated.

[0235] In one embodiment, the first slope angle θ1 is less than or equal to 35 degrees.

[0236] In an optional embodiment, the first slope angle θ1 is less than or equal to 30 degrees.

[0237] In an optional embodiment, the first slope angle θ1 is less than or equal to 25 degrees.

[0238] In an optional embodiment, the first slope angle θ1 is less than or equal to 20 degrees.

[0239] In a specific embodiment, the first slope angle θ1 is 35°, 34°, 33°, 32°, 31°, 30°, 29°, 28°, 27°, 26°, 25°, 24°, 23°, 22°, 21° or 20°.

[0240] The magnitude of the second slope angle θ2 mainly affects the continuity of the second electrode 43 above the pixel definition layer 32 and on the slope 321 of the pixel definition layer 32. In one embodiment, the second slope angle θ2 is less than or equal to 50 degrees.

[0241] In one embodiment, the second slope angle θ2 is less than or equal to 45 degrees.

[0242] In one embodiment, the second slope angle θ2 is less than or equal to 40 degrees.

[0243] In an optional embodiment, the second slope angle θ2 is less than or equal to 35 degrees.

[0244] In an optional embodiment, the second slope angle θ2 is less than or equal to 25 degrees.

[0245] In an optional embodiment, the second slope angle θ2 is less than or equal to 20 degrees.

[0246] In a specific embodiment, the second slope angle θ2 is 50°49°, 48°, 47°, 46°, 45°, 44°, 43°, 42°, 41°, 40°, 39°, 38°, 37°, 36°, 35°, 34°, 33°, 32°, 31°, 30°, 29°, 28°, 27°, 26°, 25°, 24°, 23°, 22°, 21° or 20°.

[0247] The first slope angle θ1 and the second slope angle θ2 may be equal or different.

[0248] Optionally, the second slope angle θ2 is less than or equal to the first slope angle θ1. The purpose of this arrangement is to avoid the formation of deposition shielding between the first slope 3251 and the second slope 3261 of the pixel definition layer 32, and at least ensure that the light-emitting functional layer 42 and the second electrode 43 on the first slope 3251 and the second slope 3261 are continuous and have a relatively uniform film thickness.

[0249] Please refer to Figure 6 , Figure 7 and Fig.11 As shown, the length of the lower end of the isolation column 5 is smaller than the length of the second layer 326, so that the upper edge points F on both sides of the second layer 326 are located outside the isolation column 5. In this way, the isolation column 5 can be formed on the relatively flat upper surface of the second layer 326, and the problem of forming a concave angle between the isolation column 5 and the second layer 326 is avoided.

[0250] In one embodiment, the difference between the length of the second layer 326 and the length of the lower end of the isolation column 5 is greater than or equal to 3 microns, and the single side length of the second layer 326 beyond the lower end of the isolation column 5 is greater than or equal to 1.5 microns.

[0251] In an optional embodiment, the single side length of the second layer 326 beyond the lower end of the isolation column 5 is greater than or equal to 2 micrometers.

[0252] Specifically, in step S2, the first layer 325 and the second layer 326 are manufactured by a mask plate 7 (half-tone mask plate or gray-scale mask plate) manufacturing process.

[0253] Specifically, Fig. 9 As shown, step S2 includes:

[0254] Step S21, depositing a pixel definition material layer 9 on the first electrode 41 and the driving substrate 3, and forming a photoresist material layer 8 on the pixel definition material layer 9;

[0255] Step S22, as Fig.10As shown, a halftone mask or a grayscale mask is provided to expose the photoresist material layer 8; the halftone mask or the grayscale mask includes a fully transparent area 71, a semi-transparent area 72 and an opaque area 73. Taking the photoresist material as a negative photoresist material as an example, the fully exposed area 81 corresponds to the range of the second layer 326 of the pixel definition layer 32 to be retained, the unexposed area 83 corresponds to the range of the pixel opening 320, and the semi-exposed area 82 is between the fully exposed area 81 and the unexposed area 83;

[0256] Step S23, developing the exposed photoresist material layer 8, removing the unexposed area 83, and partially removing the semi-exposed area 82;

[0257] Step S24, using the developed photoresist pattern as a barrier, the pixel definition material layer 9 is etched to form a pixel opening 320 and a first layer 325 and a second layer 326. Fig.11 shown.

[0258] For the positive photoresist material, after exposure, the fully exposed area 81 corresponds to the pixel opening 320 , and the unexposed area 83 corresponds to the second layer 326 , which will not be described in detail.

[0259] Seventh embodiment

[0260] In step 2, the evaporation angle α is less than or equal to 70°.

[0261] In an optional embodiment, the evaporation angle α is less than or equal to 65°.

[0262] In an optional embodiment, the evaporation angle α is less than or equal to 60°.

[0263] In addition, in order to ensure that the evaporated material can completely cover the pixel definition layer 32 and avoid the problem of incomplete coverage in the pixel opening 320, the evaporated angle α is also set to be greater than or equal to 50°.

[0264] In an optional embodiment, the evaporation angle α is less than or equal to 55°.

[0265] In a specific embodiment, the evaporation angle α is 70 degrees, 69 degrees, 68 degrees, 67 degrees, 66 degrees, 65 degrees, 64 degrees, 63 degrees, 62 degrees, 61 degrees, 60 degrees, 59 degrees, 58 degrees, 57 degrees, 56 degrees, 55 degrees, 54 degrees, 53 degrees, 52 degrees, 51 degrees or 50 degrees.

[0266] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A display panel, characterized in that: The invention comprises a driving substrate and a plurality of light-emitting devices arranged on the driving substrate; the driving substrate comprises a pixel definition layer, a plurality of pixel openings are arranged on the pixel definition layer, a side of the pixel definition layer close to the pixel openings has a slope, and the slope has a slope angle θ; the light-emitting device comprises a first electrode at least partially exposed in the pixel openings, and a light-emitting functional layer arranged on the first electrode and the pixel definition layer; The light-emitting functional layer includes a uniform region and a thinned region, the uniform region is located in the middle of the first electrode, and the thinned region is located between the edge of the uniform region and the edge of the pixel definition layer; the length L of the thinned region satisfies the relationship: L≤H(tanα-tan(π / 2-θ)), wherein α is the evaporation angle, α and θ are both acute angles, and H is the thickness of the pixel definition layer; the units of L and H are the same; The length L satisfies at least one of the following three items: H≤15000 Angstrom; α≤70°; θ≤35°.

2. The display panel according to claim 1, wherein: The material of the pixel definition layer includes an inorganic material; Preferably, the material of the pixel definition layer includes an inorganic material, and H≤5000 angstroms; Preferably, the material of the pixel definition layer includes an inorganic material, and H≤3000 angstroms.

3. The display panel according to claim 1, wherein: α≤65°； Preferably, α≤60°.

4. The display panel according to claim 1, wherein: θ≤30°; Preferably, θ≤25°.

5. The display panel according to claim 1, wherein: The pixel definition layer includes a first layer and a second layer stacked, the length of the second layer is less than the length of the first layer, the slope includes a first slope located at the edge of the first layer, and the first slope has a first slope angle θ1; the thinning area is located between the edge of the first slope and the uniform area; the slope angle θ includes the first slope angle θ1; the line between the edge point of the second layer and the edge point of the first layer forms an inclination angle γ with the driving substrate, γ<θ1; Preferably, the length L satisfies the relationship: L≤H1(tanα-tan(π / 2-θ1)).

6. The display panel according to claim 5, wherein: The thickness of the first layer is H1, the thickness of the second layer is H2, H1+H2=H; H1 and H satisfy the relationship: 0.2≤H1 / H≤0.

8.

7. The display panel according to claim 5, wherein: The edge of the second layer has a second slope, and the second slope has a slope angle θ2; Preferably, θ2≤50°; Preferably, θ1≤35°; Preferably, θ1≤30°; Preferably, θ2≤θ1.

8. The display panel according to claim 5, wherein: The display panel further comprises an isolation column disposed on the pixel definition layer, the isolation column having a first surface close to the drive substrate and a second surface away from the drive substrate, and a single side length of the pixel definition layer beyond the first surface is greater than or equal to 1.5 microns; Preferably, a single side length of the second layer extending beyond the first surface is greater than or equal to 1.5 micrometers.

9. A method for manufacturing a display panel, characterized in that: include: Forming a first electrode: manufacturing a plurality of first electrodes arranged in an array on the driving circuit layer; Forming a pixel definition layer: depositing a pixel definition material layer on the first electrode and the driving circuit layer, and depositing an isolation material layer on the pixel definition material layer; Sequentially etching the isolation material layer and the pixel definition material layer to form a pixel definition layer and an isolation column located on the pixel definition layer; The pixel definition layer is provided with a pixel opening exposing at least a portion of the first electrode; as well as Forming a light-emitting functional layer: at least in the pixel opening, sequentially depositing a light-emitting functional material layer, a second electrode material layer and a packaging material layer by evaporation, and etching the packaging material layer, the second electrode material layer and the light-emitting functional material layer to obtain a packaging layer, a second electrode and a light-emitting functional layer; Wherein, the light-emitting functional layer comprises a uniform region and a thinned region, the uniform region is located in the middle of the first electrode, and the thinned region is located between the edge of the uniform region and the edge of the pixel definition layer; The length L of the thinned area satisfies the relationship: L≤H(tanα-tan(π / 2-θ)), wherein α is the evaporation angle, α and θ are both acute angles, H is the thickness of the pixel definition layer; L and H have the same unit; θ is the slope angle of the slope of the pixel definition layer close to the pixel opening; Furthermore, the length L satisfies at least one of the following three items: H≤15000 Angstrom; α≤70°; θ≤35°.

10. The method for manufacturing a display panel according to claim 9, wherein: In the step of forming a pixel definition layer: the thickness of the pixel definition material layer is less than or equal to 15000 angstroms; Preferably, the material of the pixel definition material layer includes an inorganic material; Preferably, θ≤35°; Preferably, in the step of forming the pixel definition layer: the pixel definition material layer is patterned by a halftone mask or a grayscale mask, so that the pixel definition layer forms a first layer and a second layer stacked, the length of the second layer is less than the length of the first layer, the first layer has a first slope, and the first slope has a first slope angle θ1; the thinning area is located between the edge of the first slope and the edge of the uniform area; the line between the edge point of the second layer and the edge point of the first layer forms an inclination angle γ with the driving substrate, γ<θ1; Preferably, in the step of forming the light-emitting functional layer: the evaporation angle α is ≤ 70°.

11. A display device, characterized in that: Comprising the display panel according to any one of claims 1 to 8, or a display panel manufactured by the manufacturing method according to claim 9 or 10.

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