Display device and manufacturing method thereof

Abstract

A display device and a method of manufacturing the same are disclosed. The display device includes a display area including a plurality of pixels and a pad area outside the display area and including a plurality of pads. The pad includes a first conductive layer on the substrate, a second conductive layer over the first conductive layer, a third conductive layer over the second conductive layer, and a fourth conductive layer over the third conductive layer. The third conductive layer covers one side of the second conductive layer, and the display area includes a plurality of pixel electrodes, a fifth conductive layer on the same layer as the third conductive layer, and a first insulating layer between the fifth conductive layer and the pixel electrodes. There is no insulating layer on the same layer as the first insulating layer between the third conductive layer and the fourth conductive layer of the pad, and a side surface of the third conductive layer has a smooth surface.

Description

[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0079255 filed in the Korean Intellectual Property Office on June 20, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0002] The present disclosure relates to a display device and a method for manufacturing the same. Background Art

[0003] A display device such as a liquid crystal display (LCD) or an organic light emitting diode display (OLED display) may include a display panel including a signal line and a pixel capable of displaying an image. Each pixel generally includes a pixel electrode to which a data signal is applied, and the pixel electrode is connected to at least one transistor to receive the data signal. The display panel may have a display area as an area capable of displaying an image and a peripheral area around the display area. A pad area including a plurality of pads to which a printed circuit film, a driver chip, etc. may be attached may be formed in the peripheral area. Summary of the invention

[0004] Embodiments are directed to preventing defects from occurring in or around a pad of a display device during and after manufacturing the display device, and preventing peeling of a stacked layer around the pad.

[0005] The display device according to the embodiment includes: a display area including a plurality of pixels; and a pad area outside the display area and including a plurality of pads, wherein the pad includes a first conductive layer on a substrate, a second conductive layer above the first conductive layer, a third conductive layer above the second conductive layer and covering a side surface of the second conductive layer, and a fourth conductive layer above the third conductive layer, and the display area includes a plurality of pixel electrodes, a fifth conductive layer at the same layer as the third conductive layer on the substrate, and a first insulating layer between the fifth conductive layer and the pixel electrodes. There is no insulating layer at the same layer as the first insulating layer between the third conductive layer and the fourth conductive layer of the pad, and the side surface of the third conductive layer has a smooth surface.

[0006] The display device further includes: at least one insulating layer between the first conductive layer and the second conductive layer, wherein the at least one insulating layer includes a first opening above the first conductive layer, and the second conductive layer can be electrically connected to the first conductive layer through the first opening.

[0007] A side surface of the third conductive layer may contact an uppermost surface of the at least one insulating layer.

[0008] The display device also includes an encapsulation layer on the pixel electrode and a second insulating layer on the encapsulation layer, wherein the encapsulation layer includes at least one inorganic film and at least one organic film, and the second insulating layer may include portions of an upper surface and a side surface contacting the third conductive layer in the pad region.

[0009] The second insulating layer may further include a portion between two adjacent pads and contacting an uppermost surface of at least one insulating layer.

[0010] The display area may further include a plurality of sensing electrodes on the pixel electrode, and the fourth conductive layer of the pad may be at the same layer and include the same material as the sensing electrodes.

[0011] The display device further includes: a third insulating layer between the second insulating layer and the fourth conductive layer, wherein the fourth conductive layer contacts an upper surface of the third insulating layer, and the second insulating layer and the third insulating layer contact each other. The second insulating layer and the third insulating layer may include a second opening on the pad.

[0012] A method for manufacturing a display device according to an embodiment includes the following steps: forming a first conductive layer in a display area and a pad area of ​​a substrate; forming a second conductive layer on the first conductive layer in the display area and the pad area; forming a third conductive layer on the second conductive layer and in the display area and the pad area; forming a first insulating layer on the third conductive layer in the display area and the pad area; forming a plurality of pixel electrodes on the first insulating layer in the display area; forming a protective pattern on the third conductive layer after forming the plurality of pixel electrodes; and removing the first insulating layer in the pad area using the protective pattern as a mask, wherein the first insulating layer includes an organic insulating material and the first insulating layer in the pad area covers the side surface of the third conductive layer in the pad area before being removed.

[0013] The first conductive layer, the second conductive layer, and the third conductive layer sequentially stacked on the substrate and in the pad region are electrically connected to each other to form a pad, and a region where the first insulating layer is not present may exist between adjacent pads.

[0014] After removing the first insulating layer in the pad area, the method also includes removing the protective pattern and forming a fourth conductive layer in the display area and the pad area on the third conductive layer, and the fourth conductive layer in the pad area can be electrically connected to the third conductive layer in the pad area and can be included in the pad.

[0015] After forming the first conductive layer and before forming the second conductive layer, at least one insulating layer is formed in the display area and the pad area, wherein the at least one insulating layer in the pad area may include a first opening on the first conductive layer, and the second conductive layer in the pad area may be electrically connected to the first conductive layer in the pad area through the first opening.

[0016] A side surface of the third conductive layer may contact an uppermost surface of the at least one insulating layer.

[0017] The method may further include: forming an encapsulation layer including at least one inorganic film and at least one organic film on the pixel electrode; and forming a second insulating layer on the encapsulation layer, wherein the second insulating layer may be included contacting an upper surface and a side surface of the third conductive layer in the pad region.

[0018] The second insulating layer may be between adjacent third conductive layers in the pad region, and may further include a portion contacting a top surface of at least one of the insulating layers.

[0019] The fourth conductive layer may be formed after forming the encapsulation layer, and the fourth conductive layer in the display area may include a plurality of sensing electrodes.

[0020] After forming the second insulating layer and before forming the fourth conductive layer, the method further includes forming a third insulating layer in the display area and the pad area, wherein the fourth conductive layer may contact an upper surface of the third insulating layer, and the second insulating layer and the third insulating layer may include a second opening on the pad.

[0021] The display area includes a transmissive area, and the step of removing the first insulating layer includes removing the first insulating layer around the transmissive area and removing the substrate in the transmissive area.

[0022] After forming a plurality of pixel electrodes, the method further includes forming a fourth insulating layer on the pixel electrodes, wherein the fourth insulating layer has an opening above the pixel electrodes and the step of forming the protection pattern can be performed after forming the fourth insulating layer.

[0023] The protection pattern may include a metal oxide including IGZO.

[0024] The method may further include removing the protection pattern after removing the first insulating layer.

[0025] According to the embodiments, it is possible to prevent defects that may occur in or around pads during and after manufacturing a display device, and prevent peeling of stacked layers around pads, thereby preventing short defects and corrosion between pads. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a plan view of a display panel included in a display device according to an embodiment.

[0027] Figure 2 is a plan view of a sensing unit of a display device according to an embodiment.

[0028] Figure 3 is a cross-sectional view of a display device according to an embodiment.

[0029] Figure 4 is a cross-sectional view of a transmission region and its surroundings of a display device according to an embodiment.

[0030] Figure 5 is a top plan view of a portion of a pad region of a display device according to an embodiment,

[0031] Figure 6 is Figure 5 A cross-sectional view of an embodiment of the pad area shown in FIG. 1 is taken along cutting plane line AA-BB.

[0032] Figure 7 is Figure 5 A cross-sectional view of an embodiment of the pad area shown in FIG. 1 is taken along cutting plane line AA-BB.

[0033] Figure 8 is a cross-sectional view of a pad of the display device according to the embodiment.

[0034] Fig. 9 , Fig.10 , Fig.11 , Fig.12 and Fig.13 is a cross-sectional view of a pad region of a display device in a sequential manufacturing process according to a method for manufacturing a display device according to an embodiment.

[0035] Fig.14 is a cross-sectional view around a transmission region of a display device in a manufacturing process according to an embodiment.

[0036] Fig.15 is Fig.14 A cross-sectional view around a transmission area of ​​a display device in a manufacturing process after a manufacturing process of FIG.

[0037] Fig.16 A cross section of a pad of a display device according to an embodiment is shown.

[0038] Fig.17 A cross section of a pad and the surroundings of the pad for a display device according to a comparative example is shown.

[0039] Fig.18 is a plan view of a pad region of a display device according to a comparative example.

[0040] Fig.19 is a cross-sectional view of a pad region of a display device according to a comparative example.

[0041] Fig. 20 A cross section of a pad region of a display device according to a comparative example is shown.

[0042] Fig.21 is a plan view of a pad region of a display device according to a comparative example. DETAILED DESCRIPTION

[0043] Hereinafter, various embodiments will be described in detail with reference to the accompanying drawings so that those skilled in the art can make and use the described embodiments. The principles of the present disclosure can be embodied in many different forms and are not limited to the embodiments set forth herein.

[0044] In order to clearly describe the present invention, parts irrelevant to the description may be omitted, and the same reference numerals are assigned to the same or similar components throughout the specification.

[0045] In addition, since the size, shape, and thickness of each component in the drawings may be illustrated for convenience of explanation, the present disclosure is not necessarily limited to those illustrated.

[0046] In the drawings, the thickness may be exaggerated to clearly indicate each layer and region. In particular, for ease of explanation, the thickness of some layers and regions may be exaggerated.

[0047] When a component such as a layer, film, region, or plate is referred to as being “on” or “over” another component, this includes not only the case where the component is “directly on” the other component, but also the case where the other component exists between the component and the other component. In contrast, when a component is referred to as being “directly on” another component, this means that there are no other components in between. In addition, “on” or “over” a reference component means being located above or below the reference component, and does not necessarily mean being located “above” or “over” the reference component in an opposite direction of gravity.

[0048] In addition, throughout the specification, unless stated otherwise, when a certain component is referred to as being “comprising”, this means that other components may also be included without excluding the other components.

[0049] Furthermore, throughout the specification, reference to a “planar image” refers to viewing a target component from above, and reference to a “cross-sectional image” refers to viewing a cross section of a vertically cut target component from the side.

[0050] Will refer to Figures 1 to 4 A display device according to the embodiment is described.

[0051] Figure 1 is a top plan view of a display panel that may be included in a display device according to an embodiment, Figure 2 is a plan view of a sensing unit of a display device according to an embodiment, and Figure 3 is a cross-sectional view of a display region of a display device according to an embodiment. Figure 4 A cross-sectional view showing a transmissive region and surroundings of a display device according to an embodiment.

[0052] Figure 1A display panel 1000 for a display device according to an embodiment is shown. The display panel 1000 has a display area DA as an area capable of displaying an image and a non-display area as an area other than the display area DA. The display area DA may display an image on a plane parallel to a first direction DR1 and a second direction DR2. The display area DA includes a plurality of signal lines and a plurality of pixels PX operating as a unit for displaying an image.

[0053] The display panel 1000 includes a substrate 110. Each pixel PX may include at least one transistor formed on the substrate 110 and a pixel electrode connected to the at least one transistor. For example, when each pixel PX includes at least one light emitting device, each pixel PX may include at least one transistor connected to the light emitting device. In order to realize color display, each pixel PX may display one of several specific colors, and an image of a desired color may be recognized as the sum of images displayed by these specific colors.

[0054] The signal lines may include a plurality of scan lines 121 for transmitting scan signals and a plurality of data lines 171 for transmitting data signals. Each scan line 121 extends mainly in the display area DA along a first direction DR1, and each data line 171 extends mainly in the display area DA along a second direction DR2. The scan lines 121 and the data lines 171 also extend into a non-display area where they may be connected to the drive unit 700.

[0055] The non-display area may include a peripheral area PA and a circuit area CA located around the display area DA.

[0056] The peripheral area PA may be an area adjacent to and surrounding the display area DA. At least one signal line 173 may be located in the peripheral area PA. The signal line 173 may extend along an edge of the display area DA and extend to the circuit area CA.

[0057] The circuit area CA may be positioned below the lower side of the display area DA. The circuit area CA may include a pad area PDA including a plurality of pads PD and a circuit including at least one transistor.

[0058] The driving unit 700 may be mounted on the pad area PDA and electrically connected to the pad PD. The driving unit 700 may be connected to the display panel 1000 to apply various driving signals and driving voltages to the display panel 1000. The driving unit 700 may be in the form of a flexible printed circuit film, a printed circuit board, or at least one driving circuit chip. Figure 1 An example is shown in which the driving unit 700 is in the form of a driving circuit chip. A plurality of data lines 171 may be connected to the driving unit 700 to receive data signals.

[0059] The display panel 1000 included in the display device according to the embodiment may further include a bending area BA. The bending area BA may be located between the circuit area CA and the display area DA, and may extend across the substrate 110 in the first direction DR1. The display panel 1000 may be bent at the bending area BA so that the circuit area CA positioned outside the bending area BA may be folded behind the display area DA of the display panel 1000. Figure 1 The state in which the display panel 1000 is not bent or folded in the bending area BA is shown. According to the structure of the display device, the bending area BA may be omitted.

[0060] Reference Figure 2 , the display panel 1000 may further include a sensing area TA in which a plurality of sensing electrodes 520 and 540 are formed above the display area DA. An area around the sensing area TA may correspond to the peripheral area PA described previously. According to an embodiment, the sensing area TA may correspond to the peripheral area PA described previously. Figure 1 The display area DA may overlap with the display area DA, or may also overlap with a part of the peripheral area PA.

[0061] The plurality of sensing electrodes 520 and 540 may include a plurality of first sensing electrodes 520 and a plurality of second sensing electrodes 540. In the sensing area TA, the first sensing electrodes 520 and the second sensing electrodes 540 are electrically separated from each other. According to an embodiment, each of the first sensing electrodes 520 may be an input electrode receiving a sensing input signal, and each of the second sensing electrodes 540 may be an output electrode outputting a sensing output signal, and vice versa.

[0062] First sensing electrodes 520 and second sensing electrodes 540 may be distributed and disposed not to overlap each other in sensing area TA. First sensing electrodes 520 and second sensing electrodes 540 may be positioned at the same layer on substrate 110, but may alternatively be positioned at different layers.

[0063] The first sensing electrode 520 and the second sensing electrode 540 may be formed of a transparent conductor or an opaque conductor, and each of the sensing electrodes 520 and 540 may have a plurality of openings.

[0064] First sensing electrodes 520 may be electrically connected to each other through first connection portions 521, and a plurality of second sensing electrodes 540 may be electrically connected to each other through second connection portions 541. When first sensing electrodes 520 are connected to each other in one direction, second sensing electrodes 540 may be connected to each other in another direction crossing the connected first sensing electrodes 520.

[0065] When first sensing electrode 520 and second sensing electrode 540 are positioned at the same layer on substrate 110, one of first connection portion 521 and second connection portion 541 may be in the same layer as first sensing electrode 520 and second sensing electrode 540, and the other connection portion may be positioned at a different layer from first sensing electrode 520 and second sensing electrode 540.

[0066] A plurality of sensing wires 512 and 522 respectively connected to the plurality of first sensing electrodes 520 and the plurality of second sensing electrodes 540 are formed in the peripheral area of ​​the sensing area TA. For example, the first sensing wires 512 may be respectively connected to the plurality of second sensing electrodes 540 arranged along the first direction DR1, and the second sensing wires 522 may be respectively connected to the plurality of first sensing electrodes 520 arranged along the second direction DR2. According to an embodiment, the first sensing wires 512 and the second sensing wires 522 may be electrically connected to the plurality of second sensing electrodes 540 arranged along the first direction DR1. Figure 1 The pad area of ​​the PDA is some of the pads of the PD.

[0067] Figure 2 A mutual capacitance type sensing unit is shown that senses a touch using two sensing electrodes 520 and 540. However, according to an embodiment, the sensing unit may be formed as a self capacitance type sensing unit that senses a touch using only one sensing electrode.

[0068] Reference Figure 1 , Figure 2 and Figure 4 , the display area DA according to the embodiment may include a transmissive area SA, and may further include at least one optical device OD positioned below the display panel 1000. The transmissive area SA may be an area through which light is incident to (in the third direction DR3) or emitted from (in the third direction DR3) the optical device OD positioned below the display panel 1000. The transmissive area SA may have a higher light transmittance than those of the surrounding display area DA and the peripheral area PA.

[0069] The optical device OD may include a camera, a flash, a sensor, etc. For example, the optical device OD may emit light in a specific wavelength range toward an object positioned on or near the display panel 1000, or receive light reflected from the object. Such light of a specific wavelength may be light of a wavelength other than the visible light spectrum as light of an image displayed in the display area DA, or may be light in the visible light spectrum like light of an image displayed in the display area DA, and may be processed in the optical device OD.

[0070] The optical device OD overlaps the transmission area SA in the third direction DR3, and light emitted from or incident to the optical device OD may be emitted from the transmission area SA of the display panel 1000. In a plan view, the optical device OD may have an area corresponding to all or part of the transmission area SA. Figure 1 As shown in , the transmission area SA may be positioned close to the upper end of the display area DA and may be located approximately at the left side of the display area DA in the first direction DR1 , but the position of the transmission area SA is not limited thereto.

[0071] Reference Figure 4 The substrate 110 included in the display panel 1000 may have an opening HL, which may be formed by removing a portion of the substrate 110 corresponding to (or overlapping) the transmissive area SA. The optical device OD may be disposed to correspond to the opening HL of the substrate 110.

[0072] Will refer to Figure 3 and Figure 4 and Figure 1 and Figure 2 A cross-sectional structure of a display device according to an embodiment will be described together.

[0073] Reference Figure 3 The display device according to the embodiment includes a substrate 110, and further includes a barrier layer 112, a buffer layer 116, a first semiconductor layer 120p, a first insulating layer 140, a first conductive layer 130p, a second insulating layer 142, a second conductive layer 136p, a third insulating layer 160, a second semiconductor layer 126p, a fourth insulating layer 144, a third conductive layer 138p, a fifth insulating layer 162, a fourth conductive layer 170p, and a sixth insulating layer 164 in sequence on the substrate 110. , a fifth conductive layer 172p, a seventh insulating layer 180, a pixel electrode 210p, an eighth insulating layer 350, a light emitting layer 370, a common layer 360, a common electrode 270, an encapsulation layer 380, a ninth insulating layer 410p, a tenth insulating layer 420p, an eleventh insulating layer 430, a second connection portion 541 of the first sensing conductive layer, a twelfth insulating layer 450p, the second sensing electrode 540 and the first sensing electrode 520 of the second sensing conductive layer, and a thirteenth insulating layer 470.

[0074] The substrate 110 may include a rigid material that does not bend, such as glass, or may include a flexible material that can bend, such as plastic or polyimide.

[0075] The barrier layer 112 and the buffer layer 116 may include an organic insulating material or a silicon oxide (SiO x ), Silicon Nitride (SiN x ) and silicon oxynitride (SiO x N y) of an inorganic insulating material. In some embodiments, at least one of the barrier layer 112 and the buffer layer 116 may be omitted.

[0076] The first semiconductor layer 120p may include an oxide semiconductor, amorphous silicon, or polysilicon that may be patterned and include an active region or a channel region between conductive semiconductor regions. The first conductive layer 130p may be patterned to include a first gate electrode that overlaps the channel region of the first semiconductor layer 120p. The first gate electrode and the first semiconductor layer 120p may together form a first transistor.

[0077] The first conductive layer 130p may include a metal such as copper (Cu), molybdenum (Mo), aluminum (Al), silver (Ag), chromium (Cr), tantalum (Ta) or titanium (Ti), or a metal alloy including these metals. The first conductive layer 130p may be made of a single layer or multiple layers.

[0078] The second conductive layer 136p may overlap at least a portion of the first conductive layer 130p to form a capacitor. The second conductive layer 136p may receive a driving voltage.

[0079] The second semiconductor layer 126p may include an oxide semiconductor, amorphous silicon, or polysilicon that may be patterned and include an active region or a channel region between conductive semiconductor regions. According to an embodiment, the semiconductor material of the second semiconductor layer 126p and the semiconductor material of the first semiconductor layer 120p may be different from each other. For example, the first semiconductor layer 120p may include polysilicon, and the second semiconductor layer 126p may include an oxide semiconductor.

[0080] The third conductive layer 138p may include a second gate electrode overlapped with the channel region of the second semiconductor layer 126p. The second gate electrode and the second semiconductor layer 126p may form a second transistor together. The third conductive layer 138p may include a metal such as copper (Cu), molybdenum (Mo), aluminum (Al), silver (Ag), chromium (Cr), tantalum (Ta) or titanium (Ti), or a metal alloy including these metals. The third conductive layer 138p may be made of a single layer or multiple layers.

[0081] The fourth conductive layer 170p may include a plurality of connection electrodes. For example, the fourth conductive layer 170p may include a connection electrode that electrically connects the conductive region of the first semiconductor layer 120p and the conductive region of the second semiconductor layer 126p. The fourth conductive layer 170p may be formed of a single layer or multiple layers, and may include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W) and / or copper (Cu), etc. For example, the fourth conductive layer 170p may be formed of three layers such as Ti / Al / Ti.

[0082] At least one of the first insulating layer 140, the second insulating layer 142, the third insulating layer 160, the fourth insulating layer 144, and the fifth insulating layer 162 is made of silicon oxide (SiO x ) or may include silicon nitride (SiN x ), silicon oxynitride (SiO x N y ) or another inorganic insulating material such as . Some or all of the insulating layers 140, 142, 160, 144, and 162 may alternatively or additionally include an organic insulating material.

[0083] The fifth conductive layer 172p may include a data line or a driving voltage line. The fifth conductive layer 172p may be formed of a single layer or multiple layers, and may include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W) and / or copper (Cu), etc. For example, the fifth conductive layer 172p may be formed of three layers such as Ti / Al / Ti.

[0084] At least one of the sixth insulating layer 164 and the seventh insulating layer 180 may include a general polymer such as polymethyl methacrylate (PMMA) or polystyrene (PS), a polymer derivative having a phenol group, an acrylic polymer, or an imide polymer. The insulating layer 164 or 180 may include an inorganic insulating material or an organic insulating material such as polyimide, an acrylic polymer, or a siloxane-based polymer.

[0085] A layer stacked between the pixel electrode 210 p and the substrate 110 may be referred to as a pixel circuit layer TL.

[0086] The pixel electrode 210p may be made of a transparent conductive material such as indium tin oxide (ITO), poly-ITO, indium zinc oxide (IZO), indium gallium zinc oxide (IGZO) and / or indium tin zinc oxide (ITZO). Alternatively, at least one of several metal materials such as silver (Ag), molybdenum (Mo), copper (Cu), gold (Au) and aluminum (Al) may be included.

[0087] The eighth insulating layer 350 may include an organic insulating material such as polyimide, polyamide, acrylic resin, benzocyclobutene, or phenolic resin. The eighth insulating layer 350 may include an opening 355 positioned on each pixel electrode 210p.

[0088] The light emitting layer 370 and the common layer 360 may be positioned on the eighth insulating layer 350 and the pixel electrode 210p. The light emitting layer 370 may include a portion positioned within the opening 355 of the eighth insulating layer 350. The light emitting layer 370 may include an organic light emitting material or an inorganic light emitting material. The common layer 360 may include a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, etc., and may be formed not only in the opening 355 of the eighth insulating layer 350, but also on the eighth insulating layer 350. The common layer 360 may include an organic material.

[0089] Figure 3 2. It is shown that the common layer 360 may include a portion positioned between the light emitting layer 370 and the common electrode 270. According to an embodiment, the common layer 360 may be only on the light emitting layer 370, or may be as shown in FIG. Figure 3 The common layer 360 may include a hole injection layer and a hole transport layer positioned between the light emitting layer 370 and the pixel electrode 210p, and an electron transport layer and an electron injection layer may be positioned between the light emitting layer 370 and the common electrode 270. In some embodiments, as shown in FIG. Figure 4 The common layer 360 may be omitted as shown in FIG.

[0090] The common electrode 270 may include a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), and indium tin zinc oxide (ITZO). The common electrode 270 may have a semi-transparent property. Figure 4 As shown in FIG. 2 , the common electrode 270 and the pixel electrode 210 p may form a light emitting element LED together with the light emitting layer 370 therebetween.

[0091] The encapsulation layer 380 may include at least one inorganic layer and at least one organic layer. Figure 3 and Figure 4 As shown in FIG, the encapsulation layer 380 may include a first inorganic encapsulation layer 381, an organic encapsulation layer 382, ​​and a second inorganic encapsulation layer 383 sequentially stacked. Figure 4 As shown in , the organic encapsulation layer 382 may have an end or edge spaced apart from the opening HL of the substrate 110, and the first inorganic encapsulation layer 381 and the second inorganic encapsulation layer 383 surround the end of the organic encapsulation layer 382. The encapsulation layer 380 (particularly the first inorganic encapsulation layer 381 and the second inorganic encapsulation layer 383) may further extend toward the opening HL and have an edge adjacent to an edge of the opening HL in the substrate 110.

[0092] The first and second inorganic encapsulation layers 381 and 383 together with the substrate 110 may define an opening HL, and the opening HL may be formed by removing portions of the first and second inorganic encapsulation layers 381 and 383 and the substrate 110 in or corresponding to the transmission area SA. The encapsulation layer 380 may be sealed around the opening HL to prevent foreign matter such as moisture from penetrating into the display panel 1000 through the opening HL.

[0093] At least one of the ninth insulating layer 410p, the eleventh insulating layer 430, and the twelfth insulating layer 450p is made of a material such as silicon oxide (SiO x ), Silicon Nitride (SiN x ) or silicon oxynitride (SiO x N y ) or may include an inorganic insulating material such as an acrylic resin, a methacrylic resin, polyisoprene, a vinyl resin, an epoxy resin, a urethane resin, a cellulose resin, and a perylene resin.

[0094] like Figure 3 The tenth insulating layer 420p shown in the figure may be a layer for planarization, and may include an organic insulating material such as acrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, and perylene resin. The tenth insulating layer 420p may be formed only in a partial area of ​​the display area DA or the sensing area TA.

[0095] At least one of the first sensing conductive layer and the second sensing conductive layer may be formed of a single layer or multiple layers, and may include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W) and / or copper (Cu). For example, the first sensing conductive layer or the second sensing conductive layer may be formed of three layers such as Ti / Al / Ti.

[0096] and Figure 3Different from the example of, the first sensing electrode 520 and the second sensing electrode 540 may be in the first sensing conductive layer together with the first connection portion 521, and the second connection portion 541 may be in the second sensing conductive layer. In another optional embodiment, the first sensing electrode 520 and the second sensing electrode 540 may be in the first sensing conductive layer together with the second connection portion 541, and the first connection portion 521 may be in the second sensing conductive layer. In yet another optional embodiment, the first connection portion 521 and the first sensing electrode 520 may be in one (first or second) sensing conductive layer together, and the second connection portion 541 and the second sensing electrode 540 may be in another (second or first) sensing conductive layer together.

[0097] The thirteenth insulating layer 470 is a layer for protecting the first sensing conductive layer and the second sensing conductive layer, and may include an organic insulating material.

[0098] Will refer to Figures 5 to 8 With the above Figures 1 to 4 A pad area PDA of the display panel 1000 is described together. Repeated description of components identical to those described above may be omitted below. Figure 5 is a top plan view of a portion of a pad region of a display device according to an embodiment, and Figure 6 is Figure 5 A cross-sectional view of an embodiment of the pad area shown in FIG. 1 is taken along cutting plane line AA-BB.

[0099] Reference Figure 6 , a barrier layer 112, a buffer layer 116, and a first insulating layer 140 are sequentially stacked on a substrate 110 of a display panel, and a first conductive layer 130 is positioned on the first insulating layer 140. The first conductive layer 130 may be patterned and formed in a region corresponding to the pad PD, and as Figure 6 Regions of the first conductive layer 130 for adjacent pads PD shown in FIG. 1 may be spaced apart from each other. Figure 6 The first conductive layer 130 may be Figure 3 The first conductive layer 130 p of the display area DA shown in FIG. 5 is positioned at the same layer, and the first conductive layers 130 and 130 p may include the same material and may be formed together in the same process.

[0100] At least one insulating layer may be formed on the first conductive layer 130 and extend between regions of the first conductive layer 130 . Figure 6A second insulating layer 142, a third insulating layer 160, a fourth insulating layer 144, and a fifth insulating layer 162 are shown, which may be sequentially stacked on the first conductive layer 130. An example including the insulating layer 162 is shown. At least one insulating layer, which may include the second insulating layer 142, the third insulating layer 160, the fourth insulating layer 144, and the fifth insulating layer 162, is patterned to form an opening 142a above the first conductive layer 130.

[0101] The fourth conductive layer 170 may be on the fifth insulating layer 162. The fourth conductive layer 170 may be patterned and formed in a region corresponding to the pad PD. The fourth conductive layer 170 may contact and be electrically connected to the first conductive layer 130 through the opening 142a. The fourth conductive layer 170 may be positioned at the same layer as the fourth conductive layer 170p of the display area DA, may include the same material, and may be formed together in the same process.

[0102] The fifth conductive layer 172 may be on the fourth conductive layer 170. The fifth conductive layer 172 may be patterned and formed in a region corresponding to the pad PD. The fifth conductive layer 172 is positioned on the fourth conductive layer 170 and may contact and be electrically connected to the fourth conductive layer 170. The fifth conductive layer 172 may cover a side surface of the fourth conductive layer 170. The fifth conductive layer 172 may be at the same layer as the fifth conductive layer 172p of the display area DA, may include the same material, and may be formed together in the same process. Figure 6 , the fifth conductive layer 172 shows a structure formed of three layers such as Ti / Al / Ti, for example. More specifically, the fifth conductive layer 172 may include a lower layer 172_1, an intermediate layer 172_2, and an upper layer 172_3, and the lower layer 172_1 and the upper layer 172_3 may include titanium (Ti), and the intermediate layer 172_2 may include aluminum (Al).

[0103] The side surface SE of the fifth conductive layer 172 is stacked on the second insulating layer 142, the third insulating layer 160, the fourth insulating layer 144, and the fifth insulating layer 162. The fifth conductive layer 172 may contact the uppermost surface of at least one insulating layer. For example, the side surface SE of the fifth conductive layer 172 may contact the upper surface of the fifth insulating layer 162.

[0104] At least one insulating layer may be positioned on the fifth conductive layer 172 and the fifth insulating layer 162 . Figure 6An example is shown in which the ninth insulating layer 410 and the twelfth insulating layer 450 are sequentially stacked on the fifth conductive layer 172 and the fifth insulating layer 162, but in some embodiments, at least one of the ninth insulating layer 410 and the twelfth insulating layer 450 overlapping the pad PD may be omitted. Regions of the ninth insulating layer 410 and the twelfth insulating layer 450 may overlap portions of edges of two adjacent pads PD (in the third direction DR3), may overlap regions of the insulating layer 142 between the two pads PD, and may overlap the pad PD, so that most of the area including the central portion of the fifth conductive layer 172 is not covered. Regions of the ninth insulating layer 410 and the twelfth insulating layer 450 between and overlapping the two adjacent pads PD may be continuously formed. The ninth insulating layer 410 and the twelfth insulating layer 450 may be patterned to include an opening 410a positioned above the fifth conductive layer 172. Referring to Figure 6 , the ninth insulating layer 410 may contact the top surface and the side surface SE of the fifth conductive layer 172, and the ninth insulating layer 410 may also contact the top of the fifth insulating layer 162 located between the adjacent pads PD.

[0105] The ninth insulating layer 410 is located at the same layer as the ninth insulating layer 410p of the display area DA, may include the same material, and may be formed together in the same process. That is, the ninth insulating layer 410 may be a part of the ninth insulating layer 410p in the display area DA.

[0106] The twelfth insulating layer 450 is located at the same layer as the twelfth insulating layer 450p of the display area DA, may include the same material, and may be formed together in the same process. That is, the twelfth insulating layer 450 may be a part of the twelfth insulating layer 450p in the display area DA.

[0107] The sixth conductive layer 460 may be positioned on the twelfth insulating layer 450 and the fifth conductive layer 172. The sixth conductive layer 460 may be patterned and formed in a region corresponding to the pad PD. The sixth conductive layer 460 is positioned on the fifth conductive layer 172 and may contact and be electrically connected to the fifth conductive layer 172.

[0108] The first conductive layer 130, the fourth conductive layer 170, the fifth conductive layer 172, and the sixth conductive layer 460, which are sequentially stacked from the bottom and electrically connected to each other, form one pad PD. Some of the first conductive layer 130, the fourth conductive layer 170, the fifth conductive layer 172, and the sixth conductive layer 460 included in the pad PD may be omitted, and a conductive layer different from the conductive layer corresponding to the display area DA may be formed in a different process. In the illustrated embodiment, the sixth conductive layer 460 may be located at the same layer as the second sensing electrode 540 and the first sensing electrode 520 of the second sensing conductive layer in the display area DA, may contain the same material, and may be formed together in the same process.

[0109] Figure 7 is Figure 5 A cross-sectional view of another embodiment of the pad area shown in FIG. 1 taken along the cutting plane line AA-BB. Figure 7 A display device of an embodiment with Figure 6 The embodiments are mostly the same, but Figure 7 The embodiment may not have an insulating layer between the fifth conductive layer 172 and the sixth conductive layer 460 forming the pad PD. Figure 7 In the embodiment omitted Figure 6 The ninth insulating layer 410 and the twelfth insulating layer 450 are on the fifth conductive layer 172 and the fifth insulating layer 162 in the embodiment.

[0110] Figure 8 is a cross-sectional view of a pad of a display device according to an embodiment. Figure 8 , the pad PD includes the first conductive layer 130, the fourth conductive layer 170, the fifth conductive layer 172, and the sixth conductive layer 460 among the above-mentioned plurality of patterned conductive layers (such as the sixth conductive layer 460). As described above, the insulating layer IL positioned between the first conductive layer 130 and the fourth conductive layer 170 may include at least one insulating layer such as one or more of the second insulating layer 142, the third insulating layer 160, the fourth insulating layer 144, and the fifth insulating layer 162. The insulating layer IL may include an opening 142a for connection between the fourth conductive layer 170 and the first conductive layer 130.

[0111] Reference Figures 6 to 8 , the side surface SE of the fifth conductive layer 172 of the pad PD according to the embodiment is not lost or damaged during the manufacturing process, and can have a substantially smooth or flat surface. In addition, there is no defect in which the metal component (such as aluminum (Al)) of the fifth conductive layer 172 is precipitated around the pad PD and remains in the form of particles.

[0112] Will refer to Figures 9 to 14 With the previously described Figure 1A method of manufacturing a display device according to an embodiment will now be described.

[0113] Figures 9 to 13 is a cross-sectional view of a pad region of a display device during a sequential manufacturing process according to a method of manufacturing a display device according to one embodiment, and Fig.14 is a cross-sectional view around a transmission region of a display device in a manufacturing process according to a method for manufacturing a display device according to an embodiment.

[0114] First, refer to Fig. 9 In the pad region shown in FIG. 1 , after sequentially stacking a barrier layer 112, a buffer layer 116, and a first insulating layer 140 on a substrate 110, a conductive material is stacked on the first insulating layer 140 and patterned to form a first conductive layer 130. Next, at least one insulating layer including a second insulating layer 142, a third insulating layer 160, a fourth insulating layer 144, and a fifth insulating layer 162 is stacked on the first conductive layer 130.

[0115] Reference Fig.14 , in manufacturing Fig. 9 At the same time as the structure of FIG. 1 , at least one conductor positioned between the buffer layer 116 and the fifth insulating layer 162 may be further formed on the substrate 110 around the transmission area SA. Fig.14 As shown in , the conductor 136c may be positioned between the second insulating layer 142 and the third insulating layer 160, and the conductor 138c may be positioned between the fourth insulating layer 144 and the fifth insulating layer 162. The conductor 136c may be at the same layer as the second conductive layer 136p of the display area DA, may include the same material as the second conductive layer 136p, and may be formed together in the same process as the second conductive layer 136p. The conductor 138c may be positioned at the same layer as the third conductive layer 138p of the display area DA, may include the same material as the third conductive layer 138p, and may be formed together in the same process as the third conductive layer 138p.

[0116] Refer again Fig.14 , in manufacturing Fig. 9 At the same time as the structure of FIG. 1 , at least one semiconductor layer positioned between the buffer layer 116 and the fifth insulating layer 162 may be formed on the substrate 110 around the transmission area SA. Fig.14 As shown in , the semiconductor layer 126c may be patterned and formed between the third insulating layer 160 and the fourth insulating layer 144. The semiconductor layer 126c may have an edge aligned with an edge of the transmission area SA. The semiconductor layer 126c is positioned at the same layer as the second semiconductor layer 126p of the display area DA, may include the same material as the second semiconductor layer 126p, and may be formed together with the second semiconductor layer 126p in the same process.

[0117] Reference Fig.10 At least one insulating layer on the first conductive layer 130 is patterned using a photolithography process to form an opening 142 a positioned in the pad region on the first conductive layer 130 .

[0118] Reference Fig.14 When the opening 142a is formed, the fourth insulating layer 144 and the fifth insulating layer 162 as insulating layers positioned on the semiconductor layer 126c may be patterned to form an opening 162c positioned on the semiconductor layer 126c. In this case, when the opening 162c is formed, the semiconductor layer 126c may serve as an etching stopper.

[0119] Reference Fig.11 , the fourth conductive layer 170 is formed by stacking and patterning a conductive material on the substrate 110 .

[0120] Reference Fig.14 When the fourth conductive layer 170 is formed, a conductor 170c positioned on the fifth insulating layer 162 may be further formed on the substrate 110 around the transmission area SA. The conductor 170c may be positioned at the same layer as the fourth conductive layer 170p of the display area DA and the fourth conductive layer 170 of the pad area, may include the same material, and may be formed together in the same process.

[0121] Reference Fig.11 and Fig.14 , the sixth insulating layer 164 is stacked on the substrate 110 on which the fourth conductive layer 170 and the conductor 170c are formed, and then patterned. The sixth insulating layer 164 on the fourth conductive layer 170 may be removed. In this case, the sixth insulating layer 164 around the transmission area SA may not be removed.

[0122] Then, a conductive material is deposited and patterned on the substrate 110 to form a fifth conductive layer 172 and a conductor 172c around the transmission area SA. Fig.14 As shown in FIG. 1 , the conductor 172 c may have a protrusion 72 c protruding outward. Therefore, an undercut may be formed below the conductor 172 c.

[0123] Return to reference Figure 6 The fifth conductive layer 172 may include a lower layer 172_1, an intermediate layer 172_2, and an upper layer 172_3, and the lower layer 172_1 and the upper layer 172_3 may include titanium (Ti), and the intermediate layer 172_2 may include aluminum (Al). The conductor 172c may also have the same stacking structure as the fifth conductive layer 172.

[0124] The conductor 136c, the conductor 138c, the conductor 170c, and the conductor 172c positioned around the transmission area SA may overlap one another in the third direction DR3.

[0125] Next, a photosensitive organic insulating material or the like is stacked on the fifth conductive layer 172 and the conductor 172c to form a seventh insulating layer 180, and the seventh insulating layer 180 is patterned by photoprocessing or the like. Fig.11 As shown in , an insulating pattern 180pp is formed in the pad region. In a plan view, the insulating pattern 180pp covers the side surface SE of the fifth conductive layer 172 of each pad PD without overlapping most of the central portion of the fifth conductive layer 172. Therefore, adjacent insulating patterns 180pp covering the side surfaces SE of the fifth conductive layers 172 of adjacent pads PD may be spaced apart from each other. That is, there may be an area between adjacent pads PD where the seventh insulating layer 180 or the insulating pattern 180pp is not present.

[0126] In particular, when the fifth conductive layer 172 is formed of three layers such as Ti / Al / Ti, the intermediate layer may be exposed from the side surface SE of the fifth conductive layer 172, but in the display device according to this embodiment, in the manufacturing method of the display device, the side surface SE of the fifth conductive layer 172 may be covered by the insulating pattern 180pp to be protected from the influence of etchants, etc. in subsequent processes.

[0127] In the photo process for forming the insulating pattern 180pp, a half-tone mask may be used to form the insulating pattern 180pp having a thickness smaller than that of the seventh insulating layer 180 located on other places of the substrate 110. However, the embodiment is not limited thereto.

[0128] Reference Fig.14 , the seventh insulating layer 180 around the transmission area SA may be patterned to have an edge positioned on the conductor 172c.

[0129] Subsequently, a transparent conductive material such as ITO, poly-ITO, IZO, IGZO or ITZO and / or silver (Ag), molybdenum (Mo), copper (Cu) or gold is formed on the seventh insulating layer 180. A plurality of pixel electrodes are formed by stacking and patterning a conductive material such as (Au) and a metal material such as aluminum (Al). In this process, since the etchant used to pattern the pixel electrode does not contact the side surface SE of the fifth conductive layer 172 covered by the insulating pattern 180pp and the aluminum (Al) of the fifth conductive layer 172, the precipitation of these metal components can be prevented. In particular, when the fifth conductive layer 172 is formed by three layers, the metal components can be prevented from being precipitated from the side surface of the intermediate layer 172_2 of the three layers.

[0130] Reference Fig.14, an eighth insulating layer 350 may be stacked and patterned on the seventh insulating layer 180. In this step, an opening positioned on each pixel electrode of the display area DA may be formed in the eighth insulating layer 350. In addition, the eighth insulating layer 350 around the transmission area SA may be patterned to have an edge positioned on the conductor 172c.

[0131] Reference Fig.12 and Fig.14 The protective pattern 210 having the opening 215 exposing the insulating pattern 180pp is formed by stacking and patterning a conductive material on the substrate 110. The opening 215 of the protective pattern 210 may also expose the fifth insulating layer 162 between adjacent insulating patterns 180pp. Fig.14 The protection pattern 210 may have an opening 215 having an edge positioned on the conductor 172c around the transmission area SA. The opening 215 may expose the protrusion 72c of the conductor 172c to the edge of the transmission area SA. The protection pattern 210 may include a metal oxide such as IGZO.

[0132] Next, refer to Fig.13 , the insulating pattern 180pp is etched and removed using the protection pattern 210 as an etching mask. In this case, a dry etching process may be used.

[0133] Reference Fig.14 In this step, the organic insulating material (e.g., the sixth insulating layer 164 and the seventh insulating layer 180) that is not covered by the protective pattern 210 around the transmission area SA is removed. In this case, the semiconductor layer 126c can be used as an etching stopper. At this stage, the sixth insulating layer 164 under the protrusion 72c of the conductor 172c can also be removed, so an undercut can be formed under the protrusion 72c, and the protrusion 72c can protrude in the horizontal direction. Then, the protective pattern 210 is removed.

[0134] Reference Fig.15 , the light emitting layer and the common layer 360 may be stacked on the substrate 110 on which the eighth insulating layer 350 is formed. The common layer 360 may be separated by the protrusion 72c of the conductor 172c forming the undercut structure, and the common layer 360 around the transmission area SA may be separated from the common layer 360 of the surrounding display area DA. Accordingly, impurities (such as moisture) that may penetrate around the opening HL of the substrate 110 in the transmission area SA may penetrate into the pixel circuit layer of the display area DA along the common layer 360, but the separation of the common layer 360 may prevent display defects due to corrosion or short circuit defects.

[0135] Refer to the above Figure 6, the opening 410a may be formed by sequentially stacking and patterning the ninth insulating layer 410 and the twelfth insulating layer 450 on the substrate 110. The ninth insulating layer 410 may contact the upper surface and the side surface SE of the fifth conductive layer 172, and may contact the upper surface of the fifth insulating layer 162 positioned between the adjacent pads PD. Subsequently, the sixth conductive layer 460 may be formed by depositing and patterning a conductive material on the substrate 110. In contrast, referring to the above Figure 7 After removing the protection pattern 210, the ninth insulating layer 410 and the twelfth insulating layer 450 are stacked on the substrate 110, and the ninth insulating layer 410 and the twelfth insulating layer 450 on the pad PD may also be removed, and then a conductive material may be stacked thereon and patterned to form a sixth conductive layer 460. Thereafter, the substrate 110 corresponding to the transmission area SA may be removed.

[0136] Reference Figures 16 to 21 As well as the previously described drawings, a display device formed according to an embodiment is compared with a comparative example.

[0137] Fig.16 showing a cross-sectional view of a pad of a display device according to an embodiment, Fig.17 A cross-sectional view showing a pad and its surroundings of a display device according to a comparative example is shown, and Fig.18 is a top plan view of a pad region of a display device according to a comparative example.

[0138] Reference Fig.16 During the etching process for patterning the pixel electrode of the display area, the side surface SE of the fifth conductive layer 172 of the pad PD of the display device formed according to the embodiment is covered and protected by the insulating pattern 180pp, so that the metal does not precipitate on or damage the side surface SE of the fifth conductive layer 172, which may generally have a smooth or flat surface, and the defect that the metal component of the fifth conductive layer 172 is precipitated around the pad PD and remains in the form of particles can also be prevented.

[0139] Will Fig.17 and Fig.18 and Fig.16 In comparison, the pad PDr of the display device according to the comparative example is almost the same as the pad PD of the display device according to the embodiment, but Fig.17 and Fig.18The pad PDr of the comparative example is not protected by the insulating pattern 180pp during the manufacturing process. Therefore, the side surface SEr of the fifth conductive layer 172 of the pad PDr according to the comparative example is exposed to the etchant in the etching process for patterning the pixel electrode of the display area, so that a metal group such as aluminum (Al) is precipitated, and the side surface SEr is rough (uneven or not smooth) and damaged, and the precipitated metal particles PTC remaining around the pad PDr may cause defects in a conductive layer or wiring formed in a subsequent process.

[0140] Fig.19 is a cross-sectional view of a pad region of a display device according to a comparative example, Fig. 20 shows a cross-sectional view of a pad region of a display device according to a comparative example, and Fig.21 is a top plan view of a pad region of a display device according to a comparative example.

[0141] Reference Fig.19 The manufacturing method and structure of the pad PDr1 of the display device according to a comparative example are substantially the same as those of the pad PD of the display device according to the above embodiment, except that Fig.19 In the manufacturing process of the display device of FIG. 1 , the insulating pattern 180pp on the middle layer of the fifth conductive layer 172 of each pad PDr1 is not removed. Fig.19 In the manufacturing process of the display device of the comparative example shown in , the side surface SEr1 of the fifth conductive layer 172 of the pad PDr1 is not exposed to the etchant in the etching process for patterning the pixel electrode of the display area. Therefore, it can have a substantially smooth or flat surface similar to the side surface SE of the fifth conductive layer 172 of the pad PD of the display device of the present embodiment. However, referring to Fig. 20 , when the pads PDr1 of the display device according to the comparative example are electrically connected to the driving unit, the conductive balls 900 may be positioned. During bonding and pressing, when the conductive balls 900 press the insulating patterns 180pp, the insulating patterns 180pp between the pads PDr1 may be lifted from the substrate 110 and the insulating layers on the substrate 110, for example, the ninth insulating layer 410 and the twelfth insulating layer 450 may also have lifted or peeled defective portions DF. Therefore, moisture may penetrate between the adjacent pads PDr1, and thus a short circuit defect and corrosion between the adjacent pads PDr1 may easily occur.

[0142] In addition, refer to Fig.21, Newton rings are recognized around the pad PDr1 as indicated by arrows due to the protrusion of the insulating pattern 180pp and / or the ninth insulating layer 410 and the twelfth insulating layer 450. However, according to the manufacturing method and structure of the display device according to the present embodiment, defects such as damage to one side of the fifth conductive layer 172 of the pad that may occur during the manufacturing process of the display device according to various comparative examples can be prevented, and metal components can be prevented from being precipitated due to an etching solution of a subsequent process, and at the same time, since the insulating pattern 180pp that may cause the insulating layer to be lifted due to the bonding pressure of the pad and the driving part is removed, defects such as penetration, corrosion, and short circuit caused by the lifting of the insulating layer can also be prevented.

[0143] Although the embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements made by those skilled in the art using the basic concept of the present invention defined in the claims are also included in the scope of the present invention.

[0144] <Description of Reference Numerals>

[0145] 72c: protrusion

[0146] 110: Base

[0147] 112: Barrier layer

[0148] 116: Buffer layer

[0149] 120p, 126c, 126p: Semiconductor layer

[0150] 121: Scan line

[0151] 130, 130p: first conductive layer

[0152] 136c, 138c, 170c, 172c: Conductors

[0153] 136p: Second conductive layer

[0154] 138p: The third conductive layer

[0155] 140, 142, 144, 160, 162, 164, 180, 350, 410, 410p, 420p, 430, 450, 450p, 470: Insulation layer

[0156] 142a, 162c, 215, 355, 410a: Open

[0157] 170, 170p: fourth conductive layer

[0158] 171: Data line

[0159] 172, 172p: fifth conductive layer

[0160] 173: Signal line

[0161] 180pp: Insulation pattern

[0162] 210: Protective pattern

[0163] 210p: Pixel Electrode

[0164] 270: Common electrode

[0165] 360: Public layer

[0166] 370: Luminous layer

[0167] 380: Encapsulation layer

[0168] 460: Sixth conductive layer

[0169] 512, 522: Sensing wiring

[0170] 520, 540: sensing electrodes

[0171] 521, 541: Connection

[0172] 700: Drive unit

[0173] 900: Conductive ball

[0174] 1000: Display panel

Claims

1. A display device, the display device include: A display area including a plurality of pixels; as well as a pad area, outside the display area and comprising a plurality of pads, wherein: Each of the plurality of pads includes a first conductive layer on a substrate, a second conductive layer on the first conductive layer, a third conductive layer on the second conductive layer and covering a side surface of the second conductive layer, and a fourth conductive layer on the third conductive layer; The display area includes a plurality of pixel electrodes, a fifth conductive layer on the substrate at the same layer as the third conductive layer, and a first insulating layer between the fifth conductive layer and the plurality of pixel electrodes; There is no insulating layer at the same layer as the first insulating layer between the third conductive layer and the fourth conductive layer of each of the plurality of pads; and A side surface of the third conductive layer has a smooth surface.

2. The display device according to claim 1, wherein the display device further comprises: include: at least one insulating layer between the first conductive layer and the second conductive layer, wherein The at least one insulating layer comprises a first opening above the first conductive layer, and The second conductive layer is electrically connected to the first conductive layer through the first opening.

3. The display device according to claim 2, in: The side surface of the third conductive layer contacts an uppermost surface of the at least one insulating layer.

4. The display device according to claim 3, wherein the display device further comprises: include: an encapsulation layer on the plurality of pixel electrodes, and a second insulating layer, on the encapsulation layer, The encapsulation layer includes at least one inorganic film and at least one organic film, and The second insulating layer includes a portion in contact with the upper surface and the side surface of the third conductive layer in the pad region.

5. The display device according to claim 4, in: The second insulating layer also includes a portion between two adjacent pads and contacting the uppermost surface of the at least one insulating layer.

6. The display device according to claim 5, in: The display area further includes a plurality of sensing electrodes on the plurality of pixel electrodes; and The fourth conductive layer of each of the plurality of pads is at the same layer as the sensing electrode and includes the same material.

7. The display device according to claim 6, further comprising: include: A third insulating layer is provided between the second insulating layer and the fourth conductive layer, wherein: The fourth conductive layer contacts the upper surface of the third insulating layer, and The second insulating layer and the third insulating layer include a second opening on each of the plurality of pads.

8. A method for manufacturing a display device, the method The following steps are involved: forming a first conductive layer in the display region and the pad region of the substrate; forming a second conductive layer on the first conductive layer in the display area and the pad area; forming a third conductive layer on the second conductive layer in the display area and the pad area; forming a first insulating layer on the third conductive layer in the display area and the pad area; forming a plurality of pixel electrodes in the display area on the first insulating layer; After forming the plurality of pixel electrodes, forming a protection pattern on the third conductive layer; as well as The first insulating layer in the pad region is removed using the protection pattern as a mask, wherein, The first insulating layer includes an organic insulating material, and The first insulating layer in the pad region covers side surfaces of the third conductive layer in the pad region before being removed.

9. The method for manufacturing a display device according to claim 8, in: The first conductive layer, the second conductive layer, and the third conductive layer are sequentially stacked on the substrate in the pad region and are electrically connected to each other to form a pad; and The area between adjacent pads does not include the first insulating layer.

10. The method for manufacturing a display device according to claim 9, in, After the step of removing the first insulating layer in the pad area, the method further comprises: removing the protection pattern; and forming a fourth conductive layer on the third conductive layer in the display area and the pad area, A region of the fourth conductive layer in the pad region is electrically connected to a corresponding region of the third conductive layer in the pad region and is included in the pad.

11. The method for manufacturing a display device according to claim 10, further comprising: include: After forming the first conductive layer and before forming the second conductive layer, at least one insulating layer is formed in the display area and the pad area, The at least one insulating layer includes a first opening over the first conductive layer in the pad region, and The second conductive layer of the pad region is electrically connected to the first conductive layer of the pad region through the first opening.

12. The method for manufacturing a display device according to claim 11, in: A side surface of the third conductive layer contacts an uppermost surface of the at least one insulating layer.

13. The method for manufacturing a display device according to claim 12, further comprising: include: forming an encapsulation layer including at least one inorganic film and at least one organic film on the plurality of pixel electrodes, and forming a second insulating layer on the encapsulation layer, The second insulating layer includes a portion in contact with the upper surface and the side surface of the third conductive layer in the pad region.

14. The method for manufacturing a display device according to claim 13, in: A portion of the second insulating layer is between adjacent third conductive layers in the pad region and contacts the uppermost surface of the at least one insulating layer.

15. The method for manufacturing a display device according to claim 14, in: The fourth conductive layer is formed after the encapsulation layer is formed, and The fourth conductive layer in the display area includes a plurality of sensing electrodes.

16. The method for manufacturing a display device according to claim 15, further comprising: include: After forming the second insulating layer and before forming the fourth conductive layer, forming a third insulating layer in the display area and the pad area; The fourth conductive layer contacts the upper surface of the third insulating layer, and The second insulating layer and the third insulating layer include a second opening on the pad.

17. The method for manufacturing a display device according to claim 8, in: The display area includes a transmissive area, The step of removing the first insulating layer includes removing the first insulating layer around the transmission area, and The method further comprises the step of removing a portion of the substrate in the transmissive region.

18. The method for manufacturing a display device according to claim 8, in, After forming the plurality of pixel electrodes, the method further includes forming a fourth insulating layer on the plurality of pixel electrodes. The fourth insulating layer has an opening above the plurality of pixel electrodes, and The protection pattern is formed after forming the fourth insulating layer.

19. The method for manufacturing a display device according to claim 8, in: The protection pattern includes a metal oxide including IGZO.

20. The method for manufacturing a display device according to claim 8, further comprising: include: The protection pattern is removed after the first insulating layer is removed.

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