Shared common pixel OLED device

Abstract

The embodiments described herein relate to sub-pixel circuits and are used for displays such as organic light emitting diode (OLED) displays. In one embodiment, a device is provided. The device comprises a substrate; two outer pixel defining layer (PDL) structures disposed over the substrate; a depending opening defined by a top extension disposed over the body structures and extending laterally across a top structure of the body structures, each body structure disposed over an upper surface of each outer PDL structure, the depending opening defining at least two sub-pixels including a first sub-pixel and a second sub-pixel; and at least one internal PDL structure disposed over the substrate, in which the first sub-pixel and the second sub-pixel are connected over a top surface of the internal PDL structure, a first organic light emitting diode (OLED) material of the first sub-pixel connecting a second OLED material of the second sub-pixel on the top surface of the internal PDL structure.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to U.S. Provisional Patent Application No. 63 / 460,500, filed on April 19, 2023, which is incorporated herein by reference. background Technical Field

[0004] Embodiments described herein generally relate to displays. More specifically, embodiments described herein relate to sub-pixel circuits, and sub-pixel circuits for displays, such as organic light-emitting diode (OLED) displays.

[0005] Description of the Prior Art

[0006] Input devices including display devices can be used in various electronic systems. An organic light-emitting diode (OLED) is a light-emitting diode (LED) in which the emitting electroluminescent layer is an organic compound film that emits light in response to an electric current. OLED devices are classified as bottom-emitting devices if the emitted light passes through a transparent or translucent bottom electrode and substrate on which the panel is manufactured. Top-emitting devices are classified based on whether the light emitted from the OLED device is emitted through a cover that is added after the device is manufactured. Today, in many electronic devices, OLEDs are used to manufacture display devices. Today's electronic manufacturers are pushing these display devices to be smaller in size while providing higher resolution than they were a few years ago.

[0007] The encapsulation layer is used in OLED devices. During etching, residues may be left in the OLED device. Such residues may create dark spots in the OLED device. Therefore, what is needed in the art is a sub-pixel circuit. Summary of the invention

[0008] In one embodiment, a device is provided. The device includes: a substrate; two external pixel-defining layer (PDL) structures disposed above the substrate; an overhang opening defined by a top extension of a top structure disposed on a main structure and extending laterally across the main structure, each main structure disposed above an upper surface of each external PDL structure, the overhang opening defining at least two sub-pixels including a first sub-pixel and a second sub-pixel; and at least one internal PDL structure disposed above the substrate, wherein the first sub-pixel and the second sub-pixel are connected above a top surface of the internal PDL structure, and a first organic light-emitting diode (OLED) material of the first sub-pixel is connected to a second OLED material of the second sub-pixel on the top surface of the internal PDL structure.

[0009] In another embodiment, a device is provided. The device includes: a substrate; a first and a second pixel definition layer (PDL) formed over the substrate define at least two sub-pixels, with a space between the two sub-pixels, each of the first and second PDLs includes a first and a second overhang structure over each of the first and second PDLs; an anode formed in each sub-pixel over the substrate; an OLED material formed over the anode of each of the sub-pixels; and a cathode formed over the OLED material. The cathode extends under each overhang structure to contact a first sidewall of the first overhang structure and a second sidewall of the second overhang structure, so that during OLED emission, current can flow from the cathode to at least one of the first sidewall and the second sidewall.

[0010] In another embodiment, a device is provided. The device includes: a substrate; an external pixel definition layer (PDL) structure disposed above the substrate and defining subpixels of the device; a plurality of overhang openings, each overhang opening being defined by a plurality of top extensions of a plurality of top structures disposed on a plurality of main structures and extending laterally across the plurality of main structures, each main structure disposed above an upper surface of each external PDL structure, each of the plurality of overhang openings defining at least two subpixels, the subpixels including a plurality of first subpixels and a plurality of second subpixels; and an internal PDL structure disposed above the substrate and further defining first and second subpixels of the device, wherein the first and second subpixels are connected above a top surface of the internal PDL structure, and a first organic light emitting diode (OLED) material of the first subpixel is connected to a second OLED material of the second subpixel on the top surface of the internal PDL structure. The first sub-pixel includes a first anode, a first OLED material disposed above the first anode, below the top extension, and above a first portion of the top surface of the inner PDL structure, a first cathode in contact with the first sidewall of the main structure and disposed above the first OLED material and the first portion of the top surface of the inner PDL structure, and a first encapsulation layer disposed above the first cathode, the first sidewall of the main structure, and the first portion of the top surface of the inner PDL structure. The second sub-pixel includes a second anode, a second OLED material disposed above the second anode, below the top extension, and above a second portion of the top surface of the inner PDL structure, a second cathode in contact with the second sidewall of the main structure and disposed above the second OLED material and the second portion of the top surface of the inner PDL structure, and a second encapsulation layer disposed above the second cathode, the second sidewall of the main structure, and the second portion of the top surface of the inner PDL structure. The first cathode is connected to the second cathode over the top surface of the inner PDL structure.

[0011] In another embodiment, a subpixel circuit is provided. The subpixel circuit includes: a substrate; an external pixel definition layer (PDL) structure disposed above the substrate and defining the subpixel; an internal PDL structure disposed above the substrate and defining the subpixel; an overhang opening, the overhang opening being defined by a top extension disposed on a main structure and extending laterally across a top structure of the main structure, the main structure disposed above an upper surface of the external PDL structure, the overhang opening defining at least two subpixels including a first subpixel and a second subpixel, with the internal PDL structure between the first subpixel and the second subpixel. The first subpixel includes a first anode, a first organic light emitting diode (OLED) material disposed above the first anode, below the top extension, and above a first portion of a top surface of the internal PDL structure, a first cathode in contact with a first sidewall of the main structure and disposed above the first OLED material and a first portion of a top surface of the internal PDL structure, and a first encapsulation layer disposed above the first cathode, a first sidewall of the main structure, and a first portion of a top surface of the internal PDL structure. The second subpixel includes a second anode, a second OLED material disposed above the second anode, below the top extension and above a second portion of the top surface of the internal PDL structure, a second cathode contacting the second sidewall of the main structure and disposed above the second OLED material and the second portion of the top surface of the internal PDL structure, and a second encapsulation layer disposed above the second cathode, the second sidewall of the main structure and the second portion of the top surface of the internal PDL structure, wherein the first cathode is connected to the second cathode above the top surface of the internal PDL structure, and the first cathode and the second cathode are in contact with both the first sidewall and the second sidewall of the main structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] In order to be able to understand the above-mentioned features of the present disclosure in detail, the present disclosure briefly summarized above may be described in more detail with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings only illustrate exemplary embodiments and are therefore not to be considered as limiting the scope of the present disclosure, which may allow for other equally effective embodiments.

[0013] Figure 1A is a schematic top cross-sectional view of a sub-pixel circuit according to an embodiment.

[0014] Figure 1B is a schematic top cross-sectional view of a sub-pixel circuit according to an embodiment.

[0015] Figure 1C is a schematic cross-sectional view of a sub-pixel circuit according to an embodiment.

[0016] Figure 1D is a schematic cross-sectional view of a sub-pixel circuit according to an embodiment.

[0017] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements in the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0018] Embodiments described herein generally relate to displays. More specifically, embodiments described herein relate to sub-pixel circuits and methods of forming sub-pixel circuits that may be used in displays such as organic light emitting diode (OLED) displays.

[0019] Figure 1A is a schematic top cross-sectional view of the sub-pixel circuit 100 . Figure 1A The sub-pixel circuit 100 has a half-line architecture 101 of a first structure 160A. The half-line architecture 101 combines sub-pixel grouping with a local contact architecture. The local contact architecture allows each sub-pixel 124 to be in direct contact with an overhang structure 110 that forms an overhang opening 140. Direct contact prevents the voltage across the sub-pixel 124 from dropping. In a dot-type architecture, each individual sub-pixel 124 is defined by a single overhang opening 140 and has a local contact, i.e., direct contact with the overhang structure 110. In a line-type architecture, an entire row or column of sub-pixels 124 is defined by a single overhang opening 140. The half-line architecture 101 has at least two sub-pixels 124 in each overhang opening 140. In some embodiments, each pixel on the device has a half-line architecture 101, as shown in the sub-pixel circuit 100. In other embodiments, the device has some pixels in the half-line architecture 101 and some pixels in the dot-type architecture. A pixel in a dot-type architecture will have a single sub-pixel 124 in an overhang opening 140. The first configuration 160A has a first sub-pixel 124A and a second sub-pixel 124B defined by a single overhang opening 140. The overhang opening 140 is defined by Figure 1C and Figure 1D The first sub-pixel 124A and the second sub-pixel 124B are defined by a pixel definition layer (PDL) structure 120. The PDL structure 120 adjacent to the top structure 110B is an outer PDL structure 120A. Figure 1D As shown, the PDL structure 120 separating two sub-pixels (eg, the first sub-pixel 124A and the second sub-pixel 124B) in a single overhang opening 140 is an inner PDL structure 120B. The inner PDL structure 120B is disposed in the space between at least two sub-pixels (eg, the first sub-pixel 124A and the second sub-pixel 124B).

[0020] like Figure 1AThe residue 135 shown may remain on the sidewalls of the overhang structure 110. The residue 135 may be generated during a patterning process of a previously formed pixel. For example, after forming the second sub-pixel 124B, after depositing the OLED material 104 or the encapsulation layer 106 on the first sub-pixel 124A, or after removing the OLED material 104 or the encapsulation layer 106 from the first sub-pixel 124. These previous processes may generate the residue 135 at subsequent sub-pixels 124, such as the first sub-pixel 124A after forming the second sub-pixel 124B. The residue 135 may interfere with the performance of the sub-pixel 124. The residue 135 may interfere with the cathode connection 130 having sidewalls, such as Figure 1C and Figure 1D As shown. Residue 135 can weaken or block cathode connection 130. Figure 1C The residue 135 is further described in . In a dot-type architecture, the residue 135 will cause the sub-pixel 124 to malfunction, resulting in a dark spot. For a half-line architecture, the cathode connection 130 in the second sub-pixel 124B provides a connection to the first sub-pixel 124A. This connection removes the dark spot and maintains local contact. The residue 135 may only exist in certain cases and only on certain sidewalls. The residue 135 is not necessary for implementing the sub-pixel circuit 100 described herein. During OLED emission, current may flow from the anode to the OLED material 104, and from the cathode 105 to at least one of the first sidewall 111A and the second sidewall 111B of the overhang structure 110, and in some embodiments, flow to both the first sidewall 111A and the second sidewall 111B during OLED emission. The overhang structure 110 may provide electrical connectivity with at least one bus bar to complete the electrical connection.

[0021] Figure 1B is a schematic top cross-sectional view of the sub-pixel circuit 100 . Figure 1B The sub-pixel circuit 100 has a half-line architecture 101 of a second configuration 160B. The second configuration 160B includes at least three rows 165. Each row 165 includes at least two sub-pixels 124. The sub-pixels 124 in each row 165 are configured to emit light of the same color. At least two rows 165 are configured to display light of different colors. The second configuration 160B has at least two sub-pixels 124 in each overhang opening 140. Figure 1BAs shown, the second configuration 160B may have a first sub-pixel 124A, a second sub-pixel 124B, and a third sub-pixel 124C defined by a single overhang opening 140. The overhang opening 140 is defined by a plurality of top structures 110B. The first sub-pixel 124A, the second sub-pixel 124B, and the third sub-pixel 124C are defined by a PDL structure 120. The PDL structure 120 adjacent to the top structure 110B is an outer PDL structure 120A. The PDL structure 120 separating the first sub-pixel 124A, the second sub-pixel 124B, and the third sub-pixel 124C is an inner PDL structure 120B. In some embodiments, different configurations may be used, and a single overhang opening 140 defines at least two sub-pixels 124.

[0022] Figure 1C is a schematic cross-sectional view of the sub-pixel circuit 100 across the section line 1C-1C. Figure 1C A first subpixel 124A and a fourth subpixel 124D from an adjacent overhang opening 140 are shown. The first subpixel 124A has a residue 135, while the fourth subpixel 124D does not have a residue 135. The residue 135 may only exist in certain cases and only on certain sidewalls. The residue 135 is not necessary to implement the subpixel circuit 100 described herein. During OLED emission, current may flow from the anode to the OLED material 104, and from the cathode 105 to at least one of the first sidewall 111A and the second sidewall 111B of the overhang structure 110, and in some embodiments, to both the first sidewall 111A and the second sidewall 111B during OLED emission. The overhang structure 110 may provide electrical connectivity with at least one bus bar to complete the electrical connection. During OLED emission, current flows from at least one of the first sidewall 111A and the second sidewall 111B to the bus bar.

[0023] The sub-pixel circuit 100 includes a substrate 102. A metal-containing layer 103 is disposed above the substrate 102. The metal-containing layer 103 is defined by an adjacent PDL structure 120 disposed above the substrate 102. In some embodiments, the metal-containing layer 103 is pre-patterned on the substrate 102, and the substrate is a pre-patterned indium tin oxide (ITO) glass substrate. The metal-containing layer 103 is configured to operate as an anode of a corresponding sub-pixel 124. The metal-containing layer 103 includes, but is not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, combinations of the foregoing, or other suitable conductive materials. In some embodiments, the metal-containing layer 103 is a stack, including an ITO layer disposed on a silver layer, which in turn is disposed on an ITO layer.

[0024] The PDL structure 120 is disposed on the substrate 102. The PDL structure 120 includes one of an organic material, an organic material with an inorganic coating disposed thereon, or an inorganic material. The organic material of the PDL structure 120 includes, but is not limited to, polyimide. The inorganic material of the PDL structure 120 includes, but is not limited to, silicon oxide (SiO 2) 、Silicon Nitride (Si 3 N 4 ), silicon oxynitride (Si 2 N 2 O), magnesium fluoride (MgF 2 ) or a combination thereof. Adjacent PDL structures 120 define individual sub-pixels 124 of the sub-pixel circuit 100. The inner PDL structure 120B defines individual sub-pixels 124 within a single overhang opening 140. The outer PDL structure 120A defines the sub-pixels 124 relative to the sub-pixels 124 in the adjacent overhang opening 140.

[0025] Each sub-pixel 124 has an organic light-emitting diode (OLED) material 104 that is configured to emit white, red, green, blue, or other color light when stimulated. The sub-pixels 124 in the same overhang opening 140 have the same OLED material. Figure 1C In some embodiments shown, the first subpixel 124A has a first OLED material 104A configured to emit red light. The fourth subpixel 124D has a fourth OLED material 104D configured to emit blue light.

[0026] The overhang structure 110 is disposed above the upper surface 121 of the external PDL structure 120A. The overhang structure 110 is permanent to the sub-pixel circuit. The overhang structure 110 further defines the sub-pixel 124 of the sub-pixel circuit 100 via the overhang opening 140. The overhang structure 110 includes at least a top structure 110B disposed above the main structure 110A. In one embodiment, the top structure 110B is disposed on the main structure 110A. The main structure 110A is disposed above the upper surface 121 of the PDL structure 120. In one embodiment, the main structure 110A is disposed on the upper surface 121 of the PDL structure 120. Each overhang structure 110 includes adjacent overhangs 109. Adjacent overhangs 109 are defined by top extensions 109A of the top structure 110B that extend laterally across the sidewalls 111 of the main structure 110A.

[0027] The top structure 110B includes one of a non-conductive material, an inorganic material, or a metal-containing material. The main structure 110A includes an inorganic material or a metal-containing material. The non-conductive material includes, but is not limited to, an inorganic silicon-containing material. For example, the silicon-containing material includes an oxide or nitride of silicon, or a combination thereof. The metal-containing material includes at least one of a metal or a metal alloy, such as titanium (Ti), aluminum (Al), aluminum neodymium (AlNd), molybdenum (Mo), molybdenum tungsten (MoW), copper (Cu), or a combination thereof. The inorganic material of the main structure 110A and the top structure 110B includes silicon nitride (Si 3 N 4 ), silicon oxide (SiO 2 ), silicon oxynitride (Si 2 N 2 O), amorphous silicon or a combination thereof.

[0028] In one embodiment, the top structure 110B includes a non-conductive inorganic material and the main structure 110A includes a conductive inorganic material or a metal-containing material. In another embodiment, the top structure 110B includes a conductive inorganic material or a metal-containing material and the main structure 110A includes a conductive inorganic material or a metal-containing material.

[0029] The adjacent overhang 109 is defined by a top extension 109A of the top structure 110B. At least the bottom surface 107 of the top structure 110B is wider than the top surface 108 of the main structure 110A to form the top extension 109A of the overhang 109. The top structure 110B is disposed above the top surface 108 of the main structure 110A. The top extension 109A of the top structure 110B forms the overhang 109 and allows the top structure 110B to shield the main structure 110A.

[0030] OLED material 104 is disposed on metal-containing layer 103 and PDL structure 120 below overhang 109. Cathode 105 is disposed above OLED material 104 and extends below overhang 109. Cathode 105 contacts sidewall 111 of main structure 110A to produce cathode connection 130. Current flows from cathode 105 to sidewall 111. Cathode connection 130 causes sub-pixel 124 to emit light when activated. Weakening cathode connection 130 causes sub-pixel 124 to emit less light. When cathode connection 130 is blocked, sub-pixel 124 cannot be activated. First sub-pixel 124A has first cathode 105A. Fourth sub-pixel 124D has fourth cathode 105D. Cathode 105 includes a conductive material, such as a metal or a metal alloy. For example, cathode 105 includes but is not limited to silver, magnesium, chromium, titanium, aluminum, ITO or a combination of the above. In some embodiments, the material of cathode 105 is different from the material of main structure 110A and top structure 110B.

[0031] Each sub-pixel 124 includes an encapsulation layer 106. The encapsulation layer 106 may be or may correspond to a local passivation layer. The encapsulation layer 106 of each sub-pixel 124 is disposed above the cathode 105 (and the OLED material 104), and the encapsulation layer 106 extends below at least a portion of the overhang structure 110 and above at least a portion of the sidewall 111 of each adjacent overhang structure 110. In one embodiment, the encapsulation layer 106 is disposed above the sidewall 111 of the main structure 110A of the overhang structure 110, the bottom surface 107 of the top structure 110B, the sidewall 113 of the top structure 110B, and a portion of the top surface 115 of the top structure 110B. In one embodiment, the encapsulation layer 106 has a gap 150. Each gap 150 is defined by a first portion 151, a second portion 152, a third portion 153, and a first portion 151 that contacts the third portion 153 of the encapsulation layer 106. The first portion 151 of the encapsulation layer 106 is disposed above the cathode 105. Second portion 152 of encapsulation layer 106 is disposed over sidewall 111 of main structure 110A. Third portion 153 of encapsulation layer 106 is disposed below lower surface 117 of top extension 109A of top structure 110B. First portion 151 of encapsulation layer 106 may contact third portion 153 of encapsulation layer 106.

[0032] The residue 135 may be formed by previous patterning of other OLED materials 104 and encapsulation layer 106. In some embodiments, other processes may cause the residue 135 to form in the sub-pixel 124. In some sub-pixels 124, as shown in the first sub-pixel 124A, the residue 135 interferes with the cathode connection 130. The residue 135 is located between the first cathode 105A and the sidewall 111 of the main structure 110A. The cathode connection 130 allows the sub-pixel 124 to be activated. When the cathode connection 130 is blocked by the residue 135, the sub-pixel 124 cannot be activated. If each cathode connection 130 is blocked by the residue 135 in the sub-pixel 124, the unactivated sub-pixel 124 will result in a dark spot. The residue 135 may only exist in certain circumstances and only on certain sidewalls. The residue 135 is not necessary to implement the sub-pixel circuit 100 described herein. During OLED emission, current can flow from the anode to the OLED material 104, and from the cathode 105 to at least one of the first sidewall 111A and the second sidewall 111B of the overhang structure 110, and in some embodiments, to both the first sidewall 111A and the second sidewall 111B during OLED emission. The overhang structure 110 can provide electrical communication with at least one bus bar to complete the electrical connection. During OLED emission, current flows from at least one of the first sidewall 111A and the second sidewall 111B to the bus bar.

[0033] The fourth sub-pixel 124D does not have the residue 135. Due to the absence of the residue 135, the cathode connection 130 is able to operate normally. The fourth cathode 105D is connected to the sidewall 111 of the main structure 110A. There are no dark spots in the fourth sub-pixel 124D. The residue 135 may only exist in certain circumstances and only on certain sidewalls. The residue 135 is not necessary to implement the sub-pixel circuit 100 described herein. During OLED emission, current can flow from the anode to the OLED material 104, and from the cathode 105 to at least one of the first sidewall 111A and the second sidewall 111B of the overhang structure 110, and in some embodiments, to both the first sidewall 111A and the second sidewall 111B during OLED emission.

[0034] Figure 1D is a schematic cross-sectional view of the sub-pixel circuit 100 along the section line 1D-1D. Figure 1D A first sub-pixel 124A and a second sub-pixel 124B are shown from a single overhang opening 140. The first OLED material 104A of the first sub-pixel and the second OLED material 104B of the second sub-pixel 124B are the same. Figure 1D In the embodiment, the first OLED material 104A and the second OLED material 104B are configured to emit red light when stimulated. In other embodiments, the first OLED material 104A and the second OLED material 104B are configured to emit white, green, blue or other colors of light when stimulated. The first sub-pixel 124A has a residue 135, while the second sub-pixel 124B does not have a residue 135. Figure 1C 10B, the second sub-pixel 124B has a substrate 102, a metal-containing layer 103, an OLED material 104, a cathode 105, and an encapsulation layer 106. In some embodiments, the cathode 105 includes a first cathode 105A of the first sub-pixel 124A and a second cathode 105B of the second sub-pixel 124B. The first cathode 105A is connected to the second cathode 105B above the top surface of the internal PDL structure 120B. In other embodiments, the cathode 105 can be a continuous layer. The cathode 105 extends from the first sidewall 111A through the first sub-pixel 124A above the top surface of the internal PDL structure 120B. The cathode 105 then extends through the second sub-pixel 124B to the second sidewall 111B.

[0035] According to the half-line architecture 101, the second sub-pixel 124B is defined by the overhang structure 110 and the external PDL structure 120A on one side. On the other hand, the second sub-pixel 124B is separated from the first sub-pixel 124A by the internal PDL structure 120B. The first OLED material 104A of the first sub-pixel 124A is connected to the second OLED material 104B of the second sub-pixel 124B. The first cathode 105A of the first sub-pixel 124A is connected to the second cathode 105B of the second sub-pixel 124B above the top surface of the internal PDL structure 120B. The connection of the first cathode 105A and the second cathode 105B allows the first cathode 105A to be connected to the second sidewall 111B of the main structure 110A of the second sub-pixel 124B via the second cathode 105B. The connection also allows the second cathode 105B to be connected to the first sidewall 111A of the main structure 110A of the first sub-pixel 124A via the first cathode 105A. If cathode connection 130 is blocked at first side wall 111A, current flows from first cathode 105A to second side wall 111B during OLED emission. Even if cathode connection 130 is blocked at first side wall 111A, first sub-pixel 124A will be activated. If cathode connection 130 is blocked at second side wall 111B, current flows from second cathode 105B to first side wall 111A during OLED emission via first cathode 105A. Even if cathode connection 130 is blocked at second side wall 111B, second sub-pixel 124B will be activated.

[0036] like Figure 1D As shown, the first sub-pixel 124A has a residue 135 blocking the cathode connection 130. Figure 1C As shown, if the cathode connection 130 is blocked, the sub-pixel 124 cannot be activated. The first sub-pixel 124A can be activated using the cathode connection 130 at the second side wall 111B of the main structure 110A of the second sub-pixel 124B. The first cathode 105A is connected to the second cathode 105B over the top of the internal PDL structure 120B. The second cathode 105B is connected to the second side wall 111B of the main structure 110A of the second sub-pixel 124B. Similarly, if the cathode connection 130 of the first sub-pixel 124A is weakened at the first side wall 111A of the main structure 110A of the first sub-pixel 124A, the cathode connection 130 at the second side wall 111B of the main structure 110A of the second sub-pixel 124B can enhance the cathode connection 130 of the first sub-pixel 124A.

[0037] In summary, the embodiments described herein are about a sub-pixel circuit 100 that can be used for a display such as an OLED display. The sub-pixel circuit 100 has a half-line architecture 101. The half-line architecture 101 combines sub-pixel grouping with a local contact architecture. The half-line architecture 101 has at least two sub-pixels 124 in each overhang opening 140, such as a first sub-pixel 124A and a second sub-pixel 124B. By having two sub-pixels 124 in a single overhang opening 140, a sub-pixel 124 with a residue 135 can be activated by the cathode 105 of the paired sub-pixel 124. This will prevent dark spots while retaining the local contact advantage of the point-type architecture. The local contact architecture allows each sub-pixel 124 to drive current from the cathode 105. Because each cathode 105 is connected to the main structure 110A, there is no voltage loss across the sub-pixel 124, thereby achieving better device performance. The residue 135 may only exist in certain cases and only exist on certain sidewalls. The residue 135 is not necessary to implement the sub-pixel circuit 100 described herein. During OLED emission, current may flow from the anode to the OLED material 104, and from the cathode 105 to at least one of the first sidewall 111A and the second sidewall 111B of the overhang structure 110, and in some embodiments, to both the first sidewall 111A and the second sidewall 111B during OLED emission. If the cathode connection 130 is blocked at the first sidewall 111A, current flows from the first cathode 105A to the second sidewall 111B via the second cathode 105B during OLED emission. The first sub-pixel 124A will be activated even if the cathode connection 130 is blocked at the first sidewall 111A. If the cathode connection 130 is blocked at the second sidewall 111B, current flows from the second cathode 105B to the first sidewall 111A via the first cathode 105A during OLED emission. The second sub-pixel 124B will be activated even if the cathode connection 130 is blocked at the second sidewall 111B. The overhang structure 110 can provide electrical communication with at least one bus bar to complete the electrical connection. During OLED emission, current flows from at least one of the first sidewall 111A and the second sidewall 111B to the bus bar.

[0038] While the foregoing is directed to embodiments of the disclosure, other embodiments of the disclosure may be devised without departing from the basic scope of the disclosure, which is determined by the claims that follow.

Claims

1. A device comprising: substrate; two outer pixel definition layer (PDL) structures disposed over the substrate; an overhang opening defined by a top extension of a top structure disposed on and extending laterally beyond the main body structure, each main body structure disposed above an upper surface of each outer PDL structure, the overhang opening defining at least two sub-pixels including a first sub-pixel and a second sub-pixel; and At least one internal PDL structure is disposed above the substrate, wherein the first sub-pixel and the second sub-pixel are connected above a top surface of the internal PDL structure, wherein a first organic light emitting diode (OLED) material of the first sub-pixel is connected to a second OLED material of the second sub-pixel on the top surface of the internal PDL structure.

2. The device of claim 1, wherein a cathode is disposed on the first OLED material and the second OLED material, the cathode contacting a first sidewall of the first body structure and a second sidewall of the second body structure.

3. The device of claim 1, wherein the first sub-pixel comprises: a first anode; the first OLED material being disposed over the first anode, under the top extension, and over a first portion of the top surface of the inner PDL structure; a first cathode contacting the first sidewall of the main structure and disposed over the first OLED material and the first portion of the top surface of the inner PDL structure; and A first encapsulation layer is disposed on the first cathode, the first sidewall of the main structure, and the first portion of the top surface of the inner PDL structure.

4. The device of claim 3, wherein the second sub-pixel comprises: a second anode; the second OLED material being disposed over the second anode, under the top extension, and over a second portion of the top surface of the inner PDL structure; a second cathode in contact with a second sidewall of the main structure and disposed over the second OLED material and the second portion of the top surface of the inner PDL structure; and A second encapsulation layer is disposed over the second cathode, the second sidewall of the main structure, and the second portion of the top surface of the inner PDL structure. 5 . The device of claim 4 , wherein the first cathode is connected to the second cathode over the top surface of the inner PDL structure.

6. The device of claim 5, wherein during emission of the OLED, current flows from the first cathode to the second sidewall via the second cathode.

7. The device of claim 5, wherein during emission of the OLED, current flows from the second cathode via the first cathode to the first sidewall.

8. A device comprising substrate; forming a first and a second pixel definition layer (PDL) over the substrate, defining at least two sub-pixels with a space between the two sub-pixels; each of the first and the second PDLs includes first and second overhang structures over each of the first and the second PDLs; an anode formed in each sub-pixel above the substrate; an OLED material formed over the anode of each of the sub-pixels; and A cathode is formed above the OLED material, wherein the cathode extends below each of the first overhang structure and the second overhang structure to contact a first sidewall of the first overhang structure and a second sidewall of the second overhang structure so that current flows from the cathode to at least one of the first sidewall and the second sidewall during OLED emission.

9. The device of claim 8, wherein during OLED emission, the current flows from at least one of the first sidewall and the second sidewall to a bus bar.

10. The device of claim 8, wherein the cathode comprises a first cathode of a first sub-pixel and a second cathode of a second sub-pixel. 11 . The device of claim 10 , wherein the first cathode is connected to the second cathode over a top surface of an internal PDL structure disposed in the space between the two sub-pixels.

12. The device of claim 11, wherein during emission of the OLED, current flows from the first cathode to the second sidewall via the second cathode.

13. The device of claim 11, wherein during emission of the OLED, current flows from the second cathode to the first sidewall via the first cathode.

14. A device comprising: substrate; an external pixel definition layer (PDL) structure disposed over the substrate and defining sub-pixels of the device; a plurality of overhang openings, each overhang opening being defined by a plurality of top extensions disposed on a plurality of main body structures and extending laterally across a plurality of top structures of the plurality of main body structures, each main body structure being disposed above an upper surface of each external PDL structure, each overhang opening of the plurality of overhang openings defining at least two sub-pixels including a plurality of first sub-pixels and a plurality of second sub-pixels; an inner PDL structure disposed over the substrate and further defining the first sub-pixel and the second sub-pixel of the device, wherein the first sub-pixel and the second sub-pixel are connected over a top surface of the inner PDL structure, and a first organic light emitting diode (OLED) material of the first sub-pixel is connected to a second OLED material of the second sub-pixel on the top surface of the inner PDL structure; The first sub-pixel comprises: a first anode; the first OLED material being disposed over the first anode, under the top extension, and over a first portion of the top surface of the inner PDL structure; a first cathode contacting the first sidewall of the body structure and disposed over the first OLED material and the first portion of the top surface of the inner PDL structure; and a first encapsulation layer disposed over the first cathode, the first sidewall of the main structure, and the first portion of the top surface of the inner PDL structure; The second sub-pixel comprises: a second anode; the second OLED material being disposed over the second anode, under the top extension, and over a second portion of the top surface of the inner PDL structure; a second cathode contacting the second sidewall of the body structure and disposed over the second OLED material and the second portion of the top surface of the inner PDL structure; and a second encapsulation layer disposed over the second cathode, the second sidewall of the main structure, and the second portion of the top surface of the inner PDL structure; and The first cathode is connected to the second cathode over the top surface of the inner PDL structure. 15 . The device of claim 14 , wherein the first cathode is connected to the second sidewall via the second cathode, and the second cathode is connected to the first sidewall via the first cathode.

16. The device of claim 15, wherein during emission of the OLED, current flows from the first cathode to the second sidewall via the second cathode.

17. The device of claim 15, wherein during emission of the OLED, current flows from the second cathode to the first sidewall via the first cathode.

18. A sub-pixel circuit, comprising: substrate; an external pixel definition layer (PDL) structure disposed over the substrate and defining sub-pixels; an inner PDL structure disposed over the substrate and defining sub-pixels; an overhang opening defined by a top extension disposed on and extending laterally beyond a top structure of a main structure disposed above an upper surface of the external PDL structure, the overhang opening defining at least two sub-pixels including a first sub-pixel and a second sub-pixel having the internal PDL structure therebetween; The first sub-pixel comprises: a first anode; a first organic light emitting diode (OLED) material disposed over the first anode, under the top extension, and over a first portion of the top surface of the inner PDL structure; a first cathode contacting the first sidewall of the body structure and disposed over the first OLED material and the first portion of the top surface of the inner PDL structure; and a first encapsulation layer disposed over the first cathode, the first sidewall of the main structure, and the first portion of the top surface of the inner PDL structure; The second sub-pixel comprises: a second anode; a second OLED material disposed over the second anode, under the top extension, and over a second portion of the top surface of the inner PDL structure; a second cathode in contact with a second sidewall of the body structure and disposed over the second OLED material and the second portion of the top surface of the inner PDL structure; and A second packaging layer is disposed above the second cathode, the second sidewall of the main structure and the second portion of the top surface of the internal PDL structure, wherein the first cathode is connected to the second cathode above the top surface of the internal PDL structure, and the first cathode and the second cathode are in contact with both the first sidewall and the second sidewall of the main structure.

19. The subpixel circuit of claim 18, wherein during OLED emission, current flows from the first cathode to the second sidewall via the second cathode.

20. The subpixel circuit of claim 18, wherein during OLED emission, current flows from the second cathode to the first sidewall via the first cathode.

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