Display device and method of manufacturing the same

Abstract

A display device and a method of making the same are provided. The display device includes: a first substrate including a rigid material and including a first surface, a second surface opposite the first surface, and a first side surface between the first surface and the second surface; a protective layer on the first surface; a second substrate including a flexible material on the protective layer; and an emission material layer including a plurality of light emitting elements on the second substrate.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0080263, filed on June 22, 2023, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference. Technical Field

[0003] The present disclosure relates to a display device and a method of manufacturing the display device. Background Art

[0004] With the development of information society, various demands on display devices are increasing. The display device may be a flat panel display device such as a liquid crystal display device, a field emission display device, and a light emitting display device.

[0005] For example, a display device includes a display area that displays an image and a non-display area around the display area. Recently, the width of the non-display area has been continuously reduced to allow viewers to be more immersed in the content displayed on the display area and to increase the aesthetics of the display device.

[0006] In order to reduce the width of the non-display area, a bending area can be formed between the pad area and the display area, and when the bending area is bent, the pad area can be located under the display panel. For this purpose, a substrate made of a flexible material that can be bent is used. As the size of the substrate increases, a substrate made of a rigid material can also be included to maintain the shape. Summary of the invention

[0007] Aspects of the present disclosure provide a display device having a non-display area having a reduced width and a method of manufacturing the display device.

[0008] Aspects of the present disclosure also provide a display device that does not include an undercut portion between an upper substrate and a lower substrate and a method of manufacturing the display device.

[0009] It should be noted that aspects of the present disclosure are not limited to the above-mentioned aspects, and other aspects of the present disclosure will be apparent to those skilled in the art from the following description.

[0010] According to one aspect of the present disclosure, a display device is provided, comprising: a first substrate, the first substrate comprising a rigid material and comprising a first surface, a second surface opposite to the first surface, and a first side surface between the first surface and the second surface; a protective layer, the protective layer is on the first surface; a second substrate, the second substrate is on the protective layer and comprises a flexible material; and an emitting material layer, the emitting material layer is on the second substrate and comprises a plurality of light-emitting elements.

[0011] The first side surface may be at an edge in a bending region in which the second substrate is bent.

[0012] The first substrate may not be in the bending region.

[0013] The first substrate may define an opening in the bent region that exposes the protective layer.

[0014] The first side surface may be an inclined surface extending in a direction different from a direction in which the first surface extends.

[0015] The entirety of the first surface may be in direct contact with the protective layer.

[0016] The first surface and the first side surface may be in direct contact with each other.

[0017] An inclined surface extending in a direction different from a direction in which the first surface and the first side surface extend may not be between the first surface and the first side surface.

[0018] The boundary where the first side surface meets the protective layer may not overlap with the display area where the multiple light emitting elements are located.

[0019] The first substrate may include glass, wherein the second substrate includes a polymer resin.

[0020] The adhesive strength of the protective layer to the first substrate may be higher than the adhesive strength of the second substrate to the first substrate.

[0021] The protective layer may include silicon.

[0022] The protective layer may include amorphous silicon or silicon oxide (SiO x ).

[0023] The protective layer may have a thickness of about 0.1 μm or less.

[0024] The second substrate may include a first auxiliary substrate on the protection layer, a barrier layer on the first auxiliary substrate, and a second auxiliary substrate on the barrier layer.

[0025] The barrier layer and the protective layer may comprise the same material.

[0026] The protective layer may be included on the first substrate and include silicon oxide (SiO x ) and a second protective layer on the first protective layer and including amorphous silicon.

[0027] According to one aspect of the present disclosure, a method for manufacturing a display device is provided, the method comprising: preparing a first mother substrate having a first surface and a second surface opposite to the first surface, a protective layer on the first surface, a second mother substrate on the protective layer, and a display layer on the second mother substrate; attaching a first protective film to the second surface; removing a portion of the first protective film from a curved area; removing a portion of the first mother substrate from a curved area by spraying an etchant onto the second surface; completely removing the first protective film on the second surface; and exposing the protective layer by spraying an etchant onto the second surface to reduce the thickness of the first mother substrate.

[0028] During exposure of the protective layer, the entirety of the first surface may be in direct contact with the protective layer.

[0029] The protective layer may include silicon. According to one or more embodiments of the present disclosure, the width of a non-display area of ​​a display device can be reduced.

[0030] According to one or more embodiments of the present disclosure, there is no undercut portion between the upper substrate and the lower substrate of the display device.

[0031] It should be noted that aspects of the present disclosure are not limited to the aspects described above, and other aspects of the present disclosure will be apparent to those skilled in the art from the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The above and other aspects of the present disclosure will become more apparent by describing in detail embodiments of the present disclosure with reference to the accompanying drawings.

[0033] Figure 1 is a perspective view illustrating a display device according to one or more embodiments of the present disclosure.

[0034] Figure 2 is a plan view showing a display panel and a driver IC according to one or more embodiments of the present disclosure.

[0035] Figure 3 is a cross-sectional view illustrating an example of a display area of ​​a display device according to one or more embodiments of the present disclosure.

[0036] Figure 4 is along Figure 1 A cross-sectional view taken along line X1-X1'.

[0037] Figure 5 It is shown that according to Figure 4 A cross-sectional view of the display device of one or more corresponding embodiments when bent.

[0038] Figure 6 yes Figure 4 An enlarged view of part A of FIG.

[0039] Figure 7 is a cross-sectional view schematically showing a conventional display device.

[0040] Figure 8 It is shown Figure 7 A cross-sectional view of a conventional display device when bent.

[0041] Fig. 9 is an enlarged cross-sectional view illustrating a portion of a display device according to one or more other embodiments of the present disclosure.

[0042] Fig.10 is an enlarged cross-sectional view illustrating a portion of a display device according to still one or more other embodiments of the present disclosure.

[0043] Fig.11 is a flowchart for illustrating a method of manufacturing a display device according to one or more embodiments of the present disclosure.

[0044] Fig.12 It shows Fig.11 FIG. 5 is a cross-sectional view of operation S100 .

[0045] Fig.13 It shows Fig.11 FIG. 5 is a cross-sectional view of operation S200 .

[0046] Fig.14 It shows Fig.11 FIG. 5 is a cross-sectional view of operation S300 .

[0047] Fig.15 It shows Fig.11 FIG. 5 is a cross-sectional view of operation S400 .

[0048] Fig.16 It shows Fig.11 FIG. 5 is a cross-sectional view of operation S500 .

[0049] Fig.17 It shows Fig.11 FIG. 5 is a cross-sectional view of operation S600 . DETAILED DESCRIPTION

[0050] By referring to the detailed description and the accompanying drawings of the embodiments, it is easier to understand the various aspects of some embodiments of the present disclosure and the method for realizing it. The described embodiments are provided as examples so that the present disclosure will be comprehensive and complete, and will fully convey the various aspects of the present disclosure to those skilled in the art. Therefore, redundant, irrelevant or unrelated to the description of the embodiments or processes, elements and techniques that are not necessary for a complete understanding of the various aspects of the present disclosure for those of ordinary skill in the art can be omitted. Unless otherwise noted, in the entire drawings and written descriptions, the same reference numerals, characters or combinations thereof represent the same elements, and therefore, their repeated descriptions can be omitted.

[0051] The described embodiments may have various modifications and may be embodied in different forms, and should not be construed as being limited to the embodiments illustrated herein. The use of "can", "may", or "may not" when describing an embodiment corresponds to one or more embodiments of the present disclosure. The present disclosure covers all modifications, equivalents, and substitutions within the concept and technical scope of the present disclosure. In addition, each of the features of the various embodiments of the present disclosure may be combined with each other in part or in whole, and various technical interlocks and drives are possible. Each embodiment may be implemented independently of one another, or may be implemented together in an associated manner.

[0052] In the drawings, the relative sizes of elements, layers, and regions may be exaggerated for clarity and / or descriptive purposes. In addition, the use of cross-hatching and / or shading in the drawings is generally provided to clarify boundaries between adjacent elements. Therefore, unless specified, the presence or absence of cross-hatching or shading does not express or indicate any preference or requirement for specific materials, material properties, dimensions, proportions, commonalities between illustrated elements, and / or any other characteristics, attributes, properties, etc. of the elements.

[0053] Various embodiments are described herein with reference to schematic cross-sectional illustrations as embodiments and / or intermediate structures. Thus, variations in the shapes illustrated may be expected as a result of, for example, manufacturing techniques and / or tolerances. In addition, the specific structural or functional descriptions disclosed herein are merely for the purpose of describing embodiments according to the concepts of the present disclosure. Therefore, the embodiments disclosed herein should not be construed as being limited to the shapes of the illustrated elements, layers, or regions, but will include deviations in shape caused by, for example, manufacturing.

[0054] For example, an implanted region illustrated as a rectangle will, typically, have rounded or curved features and / or a gradient of implant concentration at its edges rather than a binary change from implanted to non-implanted region. Similarly, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation takes place.

[0055] For ease of explanation, spatially relative terms such as "beneath", "below", "lower", "lower side", "under", "above", "upper", "upper side", etc. may be used herein to describe the relationship of one element or feature to another element or features as shown in the figures. It will be understood that the spatially relative terms are intended to include different orientations of the device in use or in operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, the elements described as being "below", "below" or "below" other elements or features will be oriented as being "above" other elements or features. Therefore, the example terms "below" and "below" can include both the orientations of above and below. The device can be oriented in other ways (e.g., rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein should be interpreted accordingly. Similarly, when a first component is described as being disposed “on” a second component, this indicates that the first component is disposed on the upper side or the lower side of the second component, and is not limited to the upper side of the second component based on the gravity direction.

[0056] In addition, the phrase "in a plan view" means when viewing the object portion from above, and the phrase "in a schematic cross-sectional view" means when viewing a schematic cross-section taken by vertically cutting the object portion from the side. The term "overlap" or "overlapping" means that the first object can be above, below or on one side of the second object, and vice versa. In addition, the term "overlap" can include stacking, facing or facing, extending on ..., covering or partially covering, or any other suitable term as appreciated and understood by a person of ordinary skill in the art. The expression "non-overlapping" can include the meaning of any other suitable equivalent such as "separated" or "set aside" or "offset from ... "and any other suitable equivalent as appreciated and understood by a person of ordinary skill in the art. The terms "facing" and "facing" can mean that the first object can be directly or indirectly opposite to the second object. In the case where a third object is between the first object and the second object, the first object and the second object can be understood to be indirectly opposite to each other, although still facing each other.

[0057] It will be understood that when an element, layer, region, or component is referred to as being "formed on," "on," "connected to," or "(operably or communicatively) coupled to" another element, layer, region, or component, it can be directly formed on, directly on, directly connected to, or coupled to, or indirectly formed on, indirectly on, indirectly connected to, or indirectly coupled to, such that there may be one or more intervening elements, layers, regions, or components. Additionally, this may be collectively referred to as direct or indirect coupling or connection and integral or non-integral coupling or connection. For example, when a layer, region, or component is referred to as being "electrically connected" or "electrically coupled" to another layer, region, or component, it can be directly electrically connected or coupled to, or there may be one or more intervening layers, regions, or components. One or more intervening components may include switches, resistors, capacitors, etc. In describing the embodiments, expressions of connection indicate electrical connection unless explicitly described as directly connected, and "directly connected / directly coupled" or "directly on" means that one component is directly connected or coupled to another component, or is on another component, without intervening components.

[0058] In addition, in this specification, when a portion of a layer, film, region, plate, etc. is formed on another portion, the formation direction is not limited to the upper direction, but includes forming the portion on the side surface or in the lower direction. On the contrary, when a portion of a layer, film, region, plate, etc. is formed "under" another portion, this includes not only the case where the portion is "directly below" the other portion, but also the case where there is another portion between the portion and the other portion. At the same time, other expressions describing the relationship between components (such as "between...", "immediately between..." or "adjacent to" and "directly adjacent to") can be interpreted similarly. It will be understood that when an element or layer is referred to as "between" two elements or layers, it can be the only element or layer between the two elements or layers, or one or more intermediate elements or layers may also be present.

[0059] For the purposes of this disclosure, expressions such as "at least one of..." or "any one of..." or "one or more of..." when following a list of elements modify the entire list of elements, without modifying the individual elements in the list. For example, "at least one of X, Y, and Z," "at least one of X, Y, or Z," "at least one selected from the group consisting of X, Y, and Z," and "at least one selected from the group consisting of X, Y, or Z" may be interpreted as any combination of only X, only Y, only Z, two or more of X, Y, and Z, such as XYZ, XY, YZ, and XZ, or any variation thereof. Similarly, expressions such as "at least one of A and B" and "at least one of A or B" may include A, B, or A and B. As used herein, "or" generally means "and / or," and the term "and / or" includes any and all combinations of one or more of the associated listed items. For example, expressions such as "A and / or B" may include A, B, or A and B. Similarly, expressions such as “at least one of,” “a plurality of,” “one of,” and other prepositional phrases when preceding a list of elements modify the entire list of elements and do not modify the individual elements of the list.

[0060] It will be understood that although the terms "first", "second", "third", etc. can be used to describe various elements, components, areas, layers and / or cross-sections in this article, these elements, components, areas, layers and / or cross-sections should not be limited by these terms. These terms do not correspond to a specific order, position or advantage, and are only used to distinguish an element, component, component, area, region, layer, cross-section or part from another element, component, component, area, region, layer, cross-section or part. Therefore, the first element, component, area, layer or cross-section described below can be referred to as the second element, component, area, layer or cross-section without departing from the spirit and scope of the present disclosure. The description of the element of the "first" element may not require or imply the existence of the second element or other elements. The terms "first", "second", etc. can also be used herein to distinguish the elements of different categories or sets. For simplicity, the terms "first", "second", etc. can represent "first category (or first set)", "second category (or second set)", etc. respectively.

[0061] In the example, the x-axis, y-axis, and z-axis are not limited to the three axes of the rectangular coordinate system, and can be interpreted in a broader sense. For example, the x-axis, y-axis, and z-axis can be perpendicular to each other, or can represent different directions that are not perpendicular to each other. The same applies to the first direction, the second direction, and / or the third direction.

[0062] The terms used herein are only for the purpose of describing the embodiments and are not intended to limit the present disclosure. As used herein, the singular forms "a" and "an" are intended to include the plural forms as well, and the plural forms are intended to include the singular forms, unless the context clearly indicates otherwise. It will be further understood that the terms "compries", "comprising", "have", "having", "includes" and "including" when used in this specification specify the presence of the features, wholes, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components and / or combinations thereof.

[0063] When one or more embodiments can be implemented differently, a specific process order different from the described order can be performed. For example, two processes described in succession can be performed substantially at the same time or in an order opposite to the described order.

[0064] As used herein, the terms "substantially," "approximately," "approximately," and similar terms are used as terms of approximation rather than terms of degree, and are intended to take into account inherent deviations in measured or calculated values ​​that will be recognized by one of ordinary skill in the art. For example, "substantially" may include a range of + / - 5% of the corresponding value. As used herein, "approximately" or "approximately" includes the value and means that the measurement in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system) are taken into account within an acceptable range of deviations for the particular value determined by one of ordinary skill in the art. For example, "approximately" may mean within one or more standard deviations, or within ±30%, 20%, 10%, 5% of the value. In addition, when describing embodiments of the present disclosure, the use of "may" refers to "one or more embodiments of the present disclosure."

[0065] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those skilled in the art to which the present disclosure belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant field and / or this specification, and should not be interpreted in an idealized or overly formal sense, unless explicitly defined herein.

[0066] Figure 1 is a perspective view illustrating a display device according to one or more embodiments of the present disclosure. Figure 2 is a plan view showing a display panel and a driver IC according to one or more embodiments of the present disclosure.

[0067] refer to Figure 1 and Figure 2 The display device 10 according to one or more embodiments of the present disclosure is used to display a moving image or a still image. The display device 1 can be used as a display screen of a portable electronic device such as a mobile phone, a smart phone, a tablet personal computer (PC), a smart watch, a watch phone, a mobile communication terminal, an electronic notebook, an electronic book, a portable multimedia player (PMP), a navigation device, and an ultra-portable mobile PC (UMPC), and a display screen of various products such as a television, a notebook, a monitor, a billboard, and an Internet of Things device.

[0068] According to one or more embodiments of the present disclosure, the display device 10 may be a light-emitting display device, such as an organic light-emitting display device using an organic light-emitting diode, a quantum dot light-emitting display device including a quantum dot light-emitting layer, an inorganic light-emitting display device including an inorganic semiconductor, and a micro-LED display device using a micro-light-emitting diode or a nano-light-emitting diode (micro-LED or nano-LED). In the following description, an organic light-emitting display device is described as an example of the display device 10. However, it should be understood that the present disclosure is not limited thereto.

[0069] The display device 10 according to one or more embodiments may include a display panel 100 , a driver integrated circuit (IC) 200 , and a circuit board 300 .

[0070] The display panel 100 may be formed in a rectangular plane having a longer side in a first direction (x-axis direction) and a shorter side in a second direction (y-axis direction) intersecting the first direction (x-axis direction). Each of the plurality of corners where the longer side in the first direction (x-axis direction) meets the shorter side in the second direction (y-axis direction) may be formed at a right angle, or may be rounded to have a curvature. When viewed from the top, the shape of the display panel 100 is not limited to a quadrilateral shape, but may be formed in a polygonal shape, a circular shape, or an elliptical shape different from the quadrilateral shape.

[0071] In the accompanying drawings, the first direction (x-axis direction) and the second direction (y-axis direction) intersect each other as horizontal directions. For example, the first direction (x-axis direction) and the second direction (y-axis direction) may be orthogonal to each other. In addition, the third direction (z-axis direction) may intersect with the first direction (x-axis direction) and the second direction (y-axis direction), and may be, for example, a vertical direction orthogonal to the first direction (x-axis direction) and the second direction (y-axis direction). In this article, the side indicated by the arrow from the first direction to each of the third directions (x-axis direction, y-axis direction, and z-axis direction) may be referred to as the first side, and the opposite side may be referred to as the second side.

[0072] The display panel 100 may be formed to be flat, but the present disclosure is not limited thereto. For example, the display panel 100 may be formed at the left and right ends and may include a bent portion having a constant curvature or a variable curvature. In addition, the display panel 100 may be flexible so that it can be bent, curved, folded, or curled.

[0073] The display panel 100 may include a main area MA, a bending area BA, and a pad area PDA. The main area MA may include a display area DA in which an image is displayed and a non-display area NDA around the display area DA.

[0074] The display area DA may occupy most of the area of ​​the display panel 100. The display area DA may be located at the center of the display panel 100. In the display area DA, a plurality of pixels each including a plurality of emission areas may display an image.

[0075] The non-display area NDA may be adjacent to the display area DA. The non-display area NDA may be located on the outer side of the display area DA. The non-display area NDA may surround the display area DA. The non-display area NDA may be defined as a border area of ​​the display panel 100.

[0076] The bending area BA may be between the display area DA and the pad area PDA in the second direction (y-axis direction). The bending area BA may extend in the first direction (x-axis direction). The bending area BA may be bent to be under the display panel 100. When the bending area BA is bent and located under the display panel 100, a plurality of driver ICs 200 and a circuit board 300 may be located under the display panel 100.

[0077] The pad area PDA may be a lower edge area of ​​the display panel 100. In the pad area PDA, display pads PD connected to the circuit board 300 and first and second driving pads connected to the driver IC 200 may be located.

[0078] In the pad area PDA, the display pad PD may be connected to the circuit board 300. The display pad PD may be located at one edge of the display panel 100. For example, the display pad PD may be located at a lower edge of the display panel 100.

[0079] The driver integrated circuit (IC) 200 may generate a data voltage, a power voltage, a scan timing signal, etc. The driver IC 200 may output a data voltage, a power voltage, a scan timing signal, etc.

[0080] The driver IC 200 may be located in the pad area PDA. The driver IC 200 may be located between the display pad PD and the display area DA in the non-display area NDA. The driver IC 200 may be attached to the non-display area NDA of the display panel 100 by a chip on glass (COG) technology. Alternatively, a plurality of driver ICs 200 may be attached to a plurality of circuit boards 300, respectively, by a chip on plastic (COP) technology.

[0081] The circuit board 300 may be on the display pad PD at one edge of the display panel 100. The circuit board 300 may be attached to the display pad PD using a conductive adhesive member such as an anisotropic conductive film and an anisotropic conductive adhesive. Thus, the circuit board 300 may be electrically connected to a signal line of the display panel 100. The circuit board 300 may be a flexible printed circuit board, a flexible film such as a chip on film.

[0082] Figure 3 is a cross-sectional view illustrating an example of a display area of ​​a display device according to one or more embodiments of the present disclosure.

[0083] refer to Figure 3 , the display device 10 may include a display panel 100 , a polarizing film PF, and a cover window CW.

[0084] The display panel 100 may be an organic light emitting display panel including a plurality of light emitting elements LEL, each light emitting element LEL including an organic emission layer 172. However, it should be understood that the present disclosure is not limited thereto. The display panel 100 may be a light emitting display panel such as a quantum dot light emitting display panel including a quantum dot emission layer, an inorganic light emitting display panel including an inorganic semiconductor, and a micro light emitting display panel using a micro light emitting diode or a nano light emitting diode (micro LED or nano LED). In the following description, for ease of explanation, an organic light emitting display panel is used as an example of the display panel 100.

[0085] The display panel 100 may include a substrate SUB, a display layer DISL, an encapsulation layer ENC, and a sensor electrode layer SENL.

[0086] The substrate SUB may include a first substrate SUB1, a protection layer PTT located on the first substrate SUB1, and a second substrate SUB2 located on the protection layer PTT.

[0087] The first substrate SUB1 may have a rigid material. For example, the first substrate SUB1 may be made of glass. The first substrate SUB1 may be formed of ultra-thin glass (UTG) having a thickness of about 500 μm or less.

[0088] The protective layer PTT may be located between the first substrate SUB1 and the second substrate SUB2. The protective layer PTT may have a thickness of about 0.1 μm or less. The protective layer PTT may include a material having higher adhesion to the first substrate SUB1 than to the second substrate SUB2. For example, the protective layer PTT may include silicon (Si).

[0089] According to one or more embodiments of the present disclosure, the protective layer PTT may include amorphous silicon (a-Si). According to one or more other embodiments, the protective layer PTT may include silicon oxide (SiO x According to one or more other embodiments, the protective layer PTT may include amorphous silicon (a-Si) and silicon oxide (SiO x ) at least one of.

[0090] The protective layer PTT can reduce or prevent the first substrate SUB1 from being formed in the method S1 (see FIG. 1 ) for manufacturing a display device described below. Fig.11 ) during the etching process to reduce or prevent the formation of an undercut structure (e.g., an undercut portion). For example, the adhesion strength of the protective layer PTT to the first substrate SUB1 may be greater than the adhesion strength of the second substrate SUB2 to the first substrate SUB1. In addition, in the method S1 (see FIG. 1 ) of manufacturing a display device described below, Fig.11 ), the reactivity of the protective layer PTT to the etchant may be lower than the reactivity of the second substrate SUB2 to the etchant. Therefore, the penetration of the etchant at the interface between the first substrate SUB1 and the protective layer PTT can be reduced or prevented, thereby reducing or preventing the possibility of the formation of the undercut portion.

[0091] The second substrate SUB2 may have a flexible material. The second substrate SUB2 may be made of a polymer resin having a thickness less than that of the first substrate SUB1. For example, the second substrate SUB2 may have a thickness of about 20 μm or less. The second substrate SUB2 may be formed of an organic material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, and / or a polyimide resin. In some embodiments, the second substrate SUB2 may have a multilayer structure.

[0092] The display layer DISL may include a thin film transistor layer TFTL including a plurality of thin film transistors and an emission material layer EML including a plurality of light emitting elements.

[0093] The thin film transistor layer TFTL may include a first buffer film BF1 , a thin film transistor TFT, a gate insulator 130 , a first interlayer dielectric film 141 , a capacitor Cst, a second interlayer dielectric film 142 , a first data metal layer, a first organic film 160 , a second data metal layer, and a second organic film 180 .

[0094] The first buffer film BF1 may be located on the substrate SUB. The first buffer film BF1 may be formed of an inorganic material such as silicon nitride, silicon oxynitride, silicon oxide, titanium oxide, and / or aluminum oxide. Alternatively, the first buffer film BF1 may be composed of a multilayer in which two or more of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and / or an aluminum oxide layer are stacked on each other.

[0095] An active layer including a channel region TCH, a source region TS, and a drain region TD of the thin film transistor TFT may be located on the first buffer film BF1. The active layer may be made of polycrystalline silicon, single crystal silicon, low temperature polycrystalline silicon, amorphous silicon, or an oxide semiconductor. When the active layer includes polycrystalline silicon or an oxide semiconductor material, the source region TS and the drain region TD in the active layer may be conductive regions doped with ions or impurities to have conductivity.

[0096] The gate insulator 130 may be located on the active layer of the thin film transistor TFT. The gate insulator 130 may be formed of an inorganic layer (eg, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer).

[0097] A first gate metal layer including a gate electrode TG of the thin film transistor TFT, a first capacitor electrode CAE1 of the capacitor Cst, and a scan line may be located on the gate insulator 130. The gate electrode TG of the thin film transistor TFT may overlap with the channel region TCH in a third direction (z-axis direction). The first gate metal layer may be composed of a single layer or multiple layers of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0098] The first interlayer dielectric film 141 may be located on the first gate metal layer. The first interlayer dielectric film 141 may be formed of an inorganic layer (eg, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer). The first interlayer dielectric film 141 may include a plurality of inorganic layers.

[0099] The second gate metal layer including the second capacitor electrode CAE2 of the capacitor Cst may be located on the first interlayer dielectric film 141. The second capacitor electrode CAE2 may overlap with the first capacitor electrode CAE1 in the third direction (z-axis direction). Therefore, the capacitor Cst may be formed by the first capacitor electrode CAE1, the second capacitor electrode CAE2, and an inorganic insulating dielectric film located therebetween and serving as a dielectric film. The second gate metal layer may be composed of a single layer or multiple layers of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0100] The second interlayer dielectric film 142 may be located on the second gate metal layer. The second interlayer dielectric film 142 may be formed of an inorganic layer (eg, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer). The second interlayer dielectric film 142 may include a plurality of inorganic layers.

[0101] The first data metal layer including the first connection electrode CE1 and the data line may be located on the second interlayer dielectric film 142. The first connection electrode CE1 may be connected to the drain region TD through a first contact hole CT1 penetrating the gate insulator 130, the first interlayer dielectric film 141, and the second interlayer dielectric film 142. The first data metal layer may be composed of a single layer or multiple layers of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0102] The first organic film 160 may be located on the first connection electrode CE1 to provide a flat surface on the thin film transistor TFT having an uneven height. The first organic film 160 may be formed as an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and / or polyimide resin.

[0103] The second data metal layer including the second connection electrode CE2 may be located on the first organic film 160. The second data metal layer may be connected to the first connection electrode CE1 through a second contact hole CT2 penetrating the first organic film 160. The second data metal layer may be composed of a single layer or multiple layers of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0104] The second organic film 180 may be located on the second connection electrode CE2. The second organic film 180 may be formed as an organic layer such as acrylic resin, epoxy resin, phenol resin, polyamide resin, and / or polyimide resin.

[0105] It should be noted that the second data metal layer including the second link electrode CE2 and the second organic film 180 may be removed.

[0106] The emission material layer EML is located on the thin film transistor layer TFTL. The emission material layer EML may include a plurality of light emitting elements LEL and a bank 190 .

[0107] Each of the plurality of light emitting elements LEL may include a pixel electrode 171, an emission layer 172, and a common electrode 173. In each of the plurality of emission areas EA, the pixel electrode 171, the emission layer 172, and the common electrode 173 are sequentially stacked on one another so that holes from the pixel electrode 171 and electrons from the common electrode 173 are combined with one another in the emission layer 172 to emit light. In this case, the pixel electrode 171 may be an anode electrode, and the common electrode 173 may be a cathode electrode.

[0108] A pixel electrode layer including a pixel electrode 171 may be formed on the second organic film 180. The pixel electrode 171 may be connected to the second connection electrode CE2 through a third contact hole CT3 penetrating the second organic film 180. The pixel electrode layer may be composed of a single layer or multiple layers of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0109] In a top emission structure in which light is emitted from the emission layer 172 toward the common electrode 173, the pixel electrode 171 may be composed of a single layer of molybdenum (Mo), titanium (Ti), copper (Cu), or aluminum (Al), or may be composed of a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, or a stacked structure of an APC alloy and ITO (ITO / APC / ITO) to increase reflectivity. The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

[0110] The bank 190 may define a plurality of emission areas EA of the pixel. To this end, the bank 190 may be formed on the second organic film 180 to expose a portion of the pixel electrode 171. The bank 190 may cover the edge of the pixel electrode 171. The bank 190 may be partially located inside the third contact hole CT3. In other words, the third contact hole CT3 may be filled with the material of the bank 190. The bank 190 may be formed of an organic layer such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, and / or a polyimide resin.

[0111] The spacer 191 may be located on the bank 190. The spacer 191 may support a mask during a process of manufacturing the emission layer 172. The spacer 191 may be formed of an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and / or polyimide resin.

[0112] The emission layer 172 is formed on the pixel electrode 171. The emission layer 172 may include an organic material to emit light of a certain color. For example, the emission layer 172 may include a hole transport layer, an organic material layer, and an electron transport layer. The organic material layer may include a host and a dopant. The organic material layer may include a material that emits light (e.g., a predetermined light) and may be formed using a phosphor or a fluorescent material.

[0113] The common electrode 173 is formed on the emission layer 172. The common electrode 173 may be formed to cover the emission layer 172. The common electrode 173 may be a common layer formed across the plurality of emission areas EA. A capping layer may be formed on the common electrode 173.

[0114] In the top emission structure, the common electrode 173 may be formed of a transparent conductive material (TCP) such as ITO and IZO capable of transmitting light or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag) and / or an alloy of magnesium (Mg) and silver (Ag). When the common electrode 173 is formed of a semi-transmissive metal material, light extraction efficiency can be improved by using a microcavity.

[0115] The encapsulation layer ENC may be located on the emission material layer EML. The encapsulation layer ENC may include one or more inorganic films to reduce or prevent oxygen or moisture from penetrating into the emission material layer EML. In addition, the encapsulation layer ENC may include at least one organic film to protect the emission material layer EML from particles such as dust. For example, the encapsulation layer ENC may include a first inorganic encapsulation film TFE1, an organic encapsulation film TFE2, and a second inorganic encapsulation film TFE3.

[0116] The first inorganic encapsulation film TFE1 may be located on the common electrode 173, the organic encapsulation film TFE2 may be located on the first inorganic encapsulation film TFE1, and the second inorganic encapsulation film TFE3 may be located on the organic encapsulation film TFE2. The first inorganic encapsulation film TFE1 and the second inorganic encapsulation film TFE3 may be composed of a multilayer in which inorganic layers among silicon nitride layers, silicon oxynitride layers, silicon oxide layers, titanium oxide layers, and / or aluminum oxide layers are alternately stacked with each other. The organic encapsulation film TFE2 may be an organic film such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc.

[0117] The sensor electrode layer SENL may be located on the encapsulation layer ENC. The sensor electrode layer SENL may include a second buffer film BF2, a first bridge BE1, a first sensor insulating film TINS1, sensor electrodes (eg, driving electrodes TE and sensing electrodes RE), and a second sensor insulating film TINS2.

[0118] The second buffer film BF2 may be located on the encapsulation layer ENC. The second buffer film BF2 may include at least one inorganic film. For example, the second buffer film BF2 may be composed of a multilayer in which inorganic layers in silicon nitride layers, silicon oxynitride layers, silicon oxide layers, titanium oxide layers, and / or aluminum oxide layers are alternately stacked. In one or more other embodiments, the second buffer film BF2 may be omitted.

[0119] The first bridge BE1 may be located on the second buffer film BF2. The first bridge BE1 may be composed of a single layer of molybdenum (Mo), titanium (Ti), copper (Cu), or aluminum (Al), or may be composed of a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, or a stacked structure of an APC alloy and ITO (ITO / APC / ITO).

[0120] The first sensor insulating film TINS1 may be located on the first bridge BE1. The first sensor insulating film TINS1 may be formed of an inorganic layer (eg, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer).

[0121] The sensor electrodes (e.g., the drive electrodes TE and the sensing electrodes RE) may be located on the first sensor insulating film TINS1. In addition, the dummy pattern may be located on the first sensor insulating film TNIS1. The drive electrodes TE, the sensing electrodes RE, and the dummy pattern do not overlap with the plurality of emission areas EA. The drive electrodes TE, the sensing electrodes RE, and the dummy pattern may be composed of a single layer of molybdenum (Mo), titanium (Ti), copper (Cu), or aluminum (Al), or may be composed of a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, or a stacked structure of an APC alloy and ITO (ITO / APC / ITO).

[0122] The second sensor insulating film TINS2 may be located on the driving electrode TE, the sensing electrode RE, and the dummy pattern. The second sensor insulating film TINS2 may include at least one of an inorganic film and an organic film. The inorganic film may be a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The organic film may be an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, and / or a polyimide resin.

[0123] The polarizing film PF may be located on the sensor electrode layer SENL. The polarizing film PF may be located on the display panel 100 to reduce reflection of external light. The polarizing film PF may include a first base member, a linear polarizer, a retardation film (such as a λ / 4 (quarter wavelength) plate), and a second base member. The first base member, the retardation film, the linear polarizer, and the second base member of the polarizing film PF may be sequentially stacked on the display panel 100.

[0124] The cover window CW may be located on the polarizing film PF. The cover window CW may be attached to the polarizing film PF by a transparent adhesive member such as an optically clear adhesive (OCA) film.

[0125] Figure 4 is along Figure 1 A cross-sectional view taken along line X1-X1'. Figure 5 It is shown that according to Figure 4 A cross-sectional view of the display device of one or more corresponding embodiments when bent. Figure 6 yes Figure 4 An enlarged view of part A of FIG. Figure 7 is a cross-sectional view schematically showing a conventional display device. Figure 8 It is shown Figure 7 A cross-sectional view of a conventional display device when bent.

[0126] refer to Figures 4 to 8 In addition to the display panel 100, the polarizing film PF, the cover window CW, the driver IC 200 and the circuit board 300, the display device 10 may further include a protection film PRTL and a panel bottom cover PB. The display panel 100 may include a substrate SUB, a display layer DISL, an encapsulation layer ENC and a sensor electrode layer SENL.

[0127] The display layer DISL, the encapsulation layer ENC, the sensor electrode layer SENL, the polarization film PF, and the cover window CW have been described above, and a redundant description thereof will be omitted.

[0128] The substrate SUB may include a first substrate SUB1 , a protection layer PTT located on the first substrate SUB, and a second substrate SUB2 located on the protection layer PTT.

[0129] The first substrate SUB1 may not be located in the bending area BA. For example, the first substrate SUB1 may include or define an opening BOP exposing the protective layer PTT. That is, since the first substrate SUB1 made of a rigid material is not located in the bending area BA, it can be easily bent, such as Figure 5 as shown in .

[0130] The protective film PRTL may be located on the thin film transistor layer TFTL in the bending area BA. The protective film PRTL may be a layer for protecting the thin film transistor layer TFTL exposed to the outside in the bending area BA. The protective film PRTL may be formed of an organic material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and / or polyimide resin.

[0131] The panel cover bottom PB may be located on a second surface (eg, bottom surface) of the substrate SUB of the display panel 100. The second surface of the substrate SUB may be opposite to the first surface. The panel cover bottom PB may be attached to the second surface of the substrate SUB of the display panel 100 by an adhesive member. The adhesive member may be a pressure sensitive adhesive (PSA).

[0132] The panel cover bottom PB may include at least one of a light shielding member for absorbing light incident from the outside, a buffer member for absorbing external impact, and a heat dissipation member for effectively releasing heat from the display panel 100 .

[0133] The bending area BA may be bent so that the driver IC 200 and the circuit board 300 are located under the display panel 100, as shown in FIG. Figure 5 As shown in . The circuit board 300 may be attached to the lower surface of the panel bottom cover PB by an adhesive member 310. The adhesive member 310 may be a pressure sensitive adhesive.

[0134] The display device 10 described herein may include a first side surface SS1 at an edge BEG of the bending area BA. The first side surface SS1 formed at the edge BEG of the bending area BA may be an inclined surface. The inclined surface of the first side surface SS1 may be formed by attaching a first protective film PRF1 (see Fig.13 ) according to the method S1 for manufacturing a display device to be described later (see Fig.11 ) is used to etch a portion of the first substrate SUB1 on the bending area BA. The edge BEG of the bending area BA may be formed by etching the first substrate SUB1 on the bending area BA according to the method S1 for manufacturing a display device (see Fig.11 ) An edge formed by etching the first substrate SUB1 on the bending area BA.

[0135] For example, the first substrate SUB1 may include an upper surface US, a lower surface BS, and a first side surface SS1. The upper surface US of the first substrate SUB1 may be a side surface in the third direction (z-axis direction), and the lower surface BS may be an opposite side surface in the third direction (z-axis direction).

[0136] The first side surface SS1 may be located between the upper surface US and the lower surface BS. The first side surface SS1 may be located at the edge BEG of the bending area BA. The first side surface SS1 may be an inclined surface. According to one or more embodiments of the present disclosure, the angle formed between the first side surface SS1 and the upper surface US may be an acute angle, and the angle formed between the first side surface SS1 and the lower surface BS may be an obtuse angle.

[0137] For example, an inclined surface extending in a direction different from the directions in which the first side surface SS1 and the upper surface US extend may not be located between the first side surface SS1 and the upper surface US (eg, there may be no additional inclined surface).

[0138] The entire upper surface US of the first substrate SUB1 may be in direct contact with the protective layer PTT. There may be no gap between the upper surface US of the first substrate SUB1 and the protective layer PTT.

[0139] The protective layer PTT in the display device 10 described herein can reduce or prevent the first substrate SUB1 from being formed in the display device according to the method S1 (see FIG. 1 ) described below. Fig.11 ) during the etching process to reduce or prevent the formation of an undercut structure (e.g., an undercut portion). For example, the adhesion strength of the protective layer PTT to the first substrate SUB1 may be greater than the adhesion strength of the second substrate SUB2 to the first substrate SUB1. In addition, in the method S1 (see FIG. 1 ) of manufacturing a display device described below, Fig.11 ), the reactivity of the protective layer PTT to the etchant may be lower than the reactivity of the second substrate SUB2 to the etchant. Therefore, the penetration of the etchant at the interface between the first substrate SUB1 and the protective layer PTT can be reduced or prevented, thereby reducing or preventing the possibility of the formation of the undercut portion.

[0140] like Figure 7 and Figure 8 As shown in FIG. 1 , in the conventional display device, the second substrate SUB2 may be directly located on the first substrate SUB1. Since the bonding strength between the first substrate SUB1 and the second substrate SUB2 is relatively weak, the etchant may be used in the method S1 (see FIG. 1 ) for manufacturing a display device described later. Fig.11 ) penetrates into the interface between the first substrate SUB1 and the second substrate SUB2 during the etching process of FIG. 1 . Thus, the first inclined surface IP1_1 may be formed between the first side surface SS1 and the upper surface US.

[0141] In contrast, the display device 10 described in the present description further includes a protective layer PTT having a stronger adhesive strength to the first substrate SUB1 between the first substrate SUB1 and the second substrate SUB2, so that undercut portions such as the first inclined surface IP1_1 can be reduced or prevented. As a result, a gap cannot be formed between the first substrate SUB1 and the second substrate SUB2, and thus the possibility of delamination of the second substrate SUB2 can be reduced or prevented.

[0142] In addition, in the existing display device, the boundary P2 where the first inclined surface IP1_1 meets the second substrate SUB2 may overlap with the display area DA in the third direction (z-axis direction). In contrast, in the display device 10 described herein, the boundary P1 where the first side surface SS1 meets the protective layer PTT may not overlap with the display area DA in the third direction (z-axis direction).

[0143] For example, in the currently described display device 10, undercut portions such as the first inclined surface IP1_1 can be reduced or prevented, so that the possibility of cracks in the inorganic film inside the display layer DISL (cracks that may additionally occur in the display device 10 in which the first inclined surface IP1_1 overlaps with the display area DA in a third direction (z-axis direction) when the display device 10 is bent) can be reduced or prevented.

[0144] Hereinafter, a display device according to other embodiments of the present disclosure will be described. In the following description, the same or similar elements will be denoted by the same or similar reference numerals, and redundant descriptions will be omitted or briefly described.

[0145] Fig. 9 is an enlarged cross-sectional view illustrating a portion of a display device according to one or more other embodiments of the present disclosure.

[0146] According to Fig. 9 The display device 10 of one or more embodiments corresponds to the display device 10 according to the embodiment of the present invention. Figure 8 The difference between the display device 10 of one or more corresponding embodiments is that the second substrate SUB2 has a multi-layer structure.

[0147] For example, the second substrate SUB2 may include a first auxiliary substrate SSUB1 , a barrier layer BAR, and a second auxiliary substrate SSUB2 .

[0148] The first auxiliary substrate SSUB1 may be located on the protective layer PTT. The second auxiliary substrate SSUB2 may be located on the barrier layer BAR. The first auxiliary substrate SSUB1 and the second auxiliary substrate SSUB2 may have a flexible material. The second substrate SUB2 may be made of a polymer resin having a thickness less than that of the first substrate SUB1. For example, the second substrate SUB2 may be formed of an organic material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, and / or a polyimide resin.

[0149] The barrier layer BAR may be located between the first auxiliary substrate SSUB1 and the second auxiliary substrate SSUB2. The barrier layer BAR may include an inorganic insulating material. Therefore, the barrier layer BAR can reduce or prevent impurities (such as moisture) from penetrating from the outside through the first auxiliary substrate SSUB1 into the second auxiliary substrate SSUB2. The barrier layer BAR may include silicon oxide (SiO x ), Silicon Nitride (SiN x ), silicon oxynitride (SiO x N y ), Silicon Oxycarbide (SiO x C y ), Silicon Carbonitride (SiC x N y ), aluminum oxide (Al x O y ), aluminum nitride (Al x N y ), Tantalum Oxide (Ta x O y ), Hafnium Oxide (Hf x O y )、Zirconium oxide (Zr x O y ) and titanium oxide (Ti x O y ) at least one of.

[0150] In some embodiments, the barrier layer BAR may include the same material as the protective layer PTT. For example, the barrier layer BAR may include amorphous silicon and silicon oxide (SiO x ) at least one of.

[0151] Fig.10 is an enlarged cross-sectional view illustrating a portion of a display device according to still one or more other embodiments of the present disclosure.

[0152] According to Fig.10 The display device 10 of one or more embodiments corresponds to the above reference Figure 8 The display device 10 described in FIG. 1 is different in that the protective layer PTT has a multi-layer structure.

[0153] For example, the protection layer PTT may include a first protection layer SPTT1 and a second protection layer SPTT2.

[0154] The first protective layer SPTT1 may include silicon oxide (SiO x ). The second protective layer SPTT2 may include amorphous silicon. In some embodiments, and for example, the first protective layer SPTT1 may be formed by plasma treatment using a gas containing oxygen atoms in an amorphous silicon layer, but the present disclosure is not limited thereto.

[0155] The hydrophilicity of the first protective layer SPTT1 can be improved by plasma treatment, and thus the bonding strength between the first protective layer SPTT1 and the first substrate SUB1 can be enhanced. Therefore, the penetration of the etchant into the interface between the first substrate SUB1 and the protective layer PTT can be further suppressed, thereby reducing or preventing the formation of the undercut portion.

[0156] Hereinafter, a method of manufacturing a display device according to one or more embodiments of the present disclosure will be described.

[0157] Fig.11 is a flowchart for illustrating a method of manufacturing a display device according to one or more embodiments of the present disclosure. Fig.12 It shows Fig.11 FIG. 5 is a cross-sectional view of operation S100 . Fig.13 It shows Fig.11 FIG. 5 is a cross-sectional view of operation S200 . Fig.14 It shows Fig.11 FIG. 5 is a cross-sectional view of operation S300 . Fig.15 It shows Fig.11 FIG. 5 is a cross-sectional view of operation S400 . Fig.16 It shows Fig.11 FIG. 5 is a cross-sectional view of operation S500 . Fig.17 It shows Fig.11 FIG. 5 is a cross-sectional view of operation S600 .

[0158] refer to Figures 11 to 17 According to one or more embodiments, a method S1 for manufacturing a display device may include: first, forming a display layer DISL ( Fig.11 Operation S100), such as Fig.12 as shown in .

[0159] For example, the mother substrate MSUB may include a first mother substrate MSUB1, a protection layer PTT, and a second mother substrate MSUB2. The protection layer PTT may be formed on the upper surface US of the first mother substrate MSUB1, and the second mother substrate MSUB2 may be formed on the protection layer PTT.

[0160] Subsequently, the display layer DISL may be formed on the second mother substrate MSUB2, and the encapsulation layer ENC and the sensor electrode layer SENL may be further formed.

[0161] Secondly, if Fig.13 As shown in FIG. 1 , the first protection film PRF1 may be attached to the lower surface BS of the first mother substrate MSUB1, and the second protection film PRF2 may be attached to the display layer DISL ( Fig.11 Operation S200).

[0162] For example, the first protection film PRF1 may be attached to the entire lower surface BS of the first mother substrate MSUB1. When the encapsulation layer ENC and the sensor electrode layer SENL are located on the display layer DISL, the second protection film PRF2 may be attached on the sensor electrode layer SENL. The second protection film PRF2 may completely cover the display layer DISL, the encapsulation layer ENC, and the sensor electrode layer SENL.

[0163] The first protective film PRF1 and the second protective film PRF2 may be acid-resistant films. The first protective film PRF1 can reduce or prevent the possibility that the first mother substrate MSUB1 is etched where the first protective film PRF1 is attached. The second protective film PRF2 can protect the display layer DISL from the etchant ECH (see Fig.15 )’s impact.

[0164] Third, if Fig.14 As shown in FIG. 1 , a portion of the first protection film PRF1 located in the bending area BA may be removed ( Fig.11 Operation S300).

[0165] A portion of the lower surface BS of the first mother substrate MSUB1 may be exposed in the bending area BA where the first protection film PRF1 is removed.

[0166] Fourth, if Fig.15 As shown in FIG. 1 , the etchant ECH is sprayed on the lower surface BS of the first mother substrate MSUB1, so that the first mother substrate MSUB1 located in the bending area BA can be partially removed ( Fig.11 Operation S400 in FIG.

[0167] Since a portion of the first mother substrate MSUB1 is removed in the bending area BA, there may be a thickness difference between the etched area and the unetched area. For example, the second thickness T2 of the first mother substrate MSUB1 in the bending area BA may be less than the first thickness T1 of the first mother substrate MSUB1 in other areas except the bending area BA. The second thickness T2 may be about 0.5 times to about 0.7 times the first thickness T1.

[0168] After a portion of the first mother substrate MSUB1 is etched, an inclined surface may be formed in the bent area BA. Such an inclined surface may be formed by the isotropic property of wet etching.

[0169] Fifth, if Fig.16 As shown in FIG. 1 , the entire first protective film PRF1 located on the lower surface BS of the first mother substrate MSUB1 may be removed. Therefore, the entire lower surface BS of the first mother substrate MSUB1 may be exposed ( Fig.11 Operation S500).

[0170] Sixth, if Fig.17 As shown in FIG. 1 , the total thickness of the first mother substrate MSUB1 can be reduced by spraying the etchant ECH onto the lower surface BS of the first mother substrate MSUB1, and the protection layer PTT located on the first mother substrate MSUB1 can be exposed ( Fig.11 Operation S600).

[0171] By spraying an etchant onto the lower surface BS of the first mother substrate MSUB1, the first thickness T1 of the first mother substrate MSUB1 can be reduced to a third thickness T3. The first thickness T1 may be about 500 μm, and the third thickness T3 may be about 200 μm, but the present disclosure is not limited thereto.

[0172] Since the first mother substrate MSUB1 is etched without any mask, the entire lower surface BS of the first mother substrate MSUB1 can be substantially uniformly etched (isotropic etching). As a result, the first side surface SS1 may be formed as an inclined surface at the edge BEG of the first substrate MSUB1 in the bending area BA along the inclined surface formed in operation S400.

[0173] As the thickness of the first mother substrate MSUB1 decreases, the portion of the first mother substrate MSUB1 located at the bending area BA may be completely etched, and thus the protection layer PTT may be exposed. Even after the protection layer PTT is exposed, the first mother substrate MSUB1 may be over-etched to completely remove the first mother substrate MSUB1 located in the bending area BA. At this time, since the bonding strength between the protection layer PTT and the first mother substrate MSUB1 is relatively strong, the etchant ECH cannot penetrate into the interface between the protection layer PTT and the first mother substrate MSUB1. In this way, in the display device 10 according to this embodiment, the possibility of forming an undercut portion at the interface between the protection layer PTT and the first mother substrate MSUB1 can be reduced or prevented.

[0174] At the end of the detailed description, those skilled in the art will appreciate that many variations and modifications can be made to the embodiments without departing substantially from the various aspects of the present disclosure. Therefore, the embodiments of the present disclosure disclosed are used only in a general and descriptive sense and not for non-limiting purposes.

Claims

1. A display device, comprising: a first substrate comprising a rigid material and including a first surface, a second surface opposite to the first surface, and a first side surface between the first surface and the second surface; a protective layer, the protective layer being on the first surface; a second substrate on the protective layer and comprising a flexible material; as well as An emitting material layer is on the second substrate and includes a plurality of light emitting elements.

2. The display device according to claim 1, wherein: The first side surface is at an edge in a bending region where the second substrate is bent.

3. The display device according to claim 2, wherein: The first substrate is not in the bending region.

4. The display device according to claim 2, wherein: The first substrate defines an opening in the bending region that exposes the protection layer.

5. The display device according to claim 1, wherein: The first side surface is an inclined surface extending in a direction different from a direction in which the first surface extends.

6. The display device according to claim 1, wherein: The entirety of the first surface is in direct contact with the protective layer.

7. The display device according to claim 6, wherein: The first surface and the first side surface are in direct contact with each other.

8. The display device according to claim 7, wherein: An inclined surface extending in a direction different from the direction in which the first surface and the first side surface extend is not between the first surface and the first side surface.

9. The display device according to claim 1, wherein: A boundary where the first side surface meets the protection layer does not overlap with a display area where the plurality of light emitting elements are located.

10. The display device according to claim 1, wherein: The first substrate comprises glass, and Wherein, the second substrate comprises a polymer resin.

11. The display device according to claim 1, wherein: The adhesive strength of the protective layer to the first substrate is higher than the adhesive strength of the second substrate to the first substrate.

12. The display device according to claim 1, wherein: The protective layer includes silicon.

13. The display device according to claim 12, wherein: The protection layer includes amorphous silicon or silicon oxide.

14. The display device according to claim 1, wherein: The protective layer has a thickness of 0.1 μm or less.

15. The display device according to claim 1, wherein: The second substrate comprises: a first auxiliary substrate, wherein the first auxiliary substrate is on the protective layer; a barrier layer, the barrier layer being on the first auxiliary substrate; and A second auxiliary substrate is provided, wherein the second auxiliary substrate is on the barrier layer.

16. The display device according to claim 15, wherein: The barrier layer and the protective layer include the same material.

17. The display device according to claim 1, wherein: The protective layer comprises: a first protective layer on the first substrate and comprising silicon oxide; and The second protection layer is on the first protection layer and includes amorphous silicon.

18. A method for manufacturing a display device, the method comprising: Prepare a first mother substrate having a first surface and a second surface opposite to the first surface, a protective layer on the first surface, a second mother substrate on the protective layer, and a display layer on the second mother substrate; attaching a first protective film to the second surface; removing a portion of the first protective film from the bending area; removing a portion of the first mother substrate from the curved area by spraying an etchant onto the second surface; completely removing the first protective film on the second surface; as well as The protective layer is exposed by spraying an etchant onto the second surface to reduce the thickness of the first mother substrate.

19. The method for manufacturing a display device according to claim 18, wherein: During the exposing of the protective layer, the entirety of the first surface is in direct contact with the protective layer.

20. The method for manufacturing a display device according to claim 18, wherein: The protective layer includes silicon.

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