Electronic device

Abstract

The invention discloses an electronic device which comprises a first substrate, an optical sensor, a display unit, a second substrate and a first light blocking layer. The optical sensor is disposed on the first substrate. The display unit is arranged on the first substrate and comprises a thin film transistor and an electrode, and the electrode is electrically connected with the thin film transistor. The second substrate includes a first side facing the optical sensor and a second side opposite the first side. The first light blocking layer is disposed on the second side and includes a first opening. The first opening overlaps the optical sensor, and the optical sensor overlaps the thin film transistor.

Description

[0001] This application is a divisional application of the invention patent application with application date of June 3, 2019, application number 201910478341.2, and invention name “Electronic Device”. Technical Field

[0002] The present invention relates to an electronic device, and in particular to an electronic device for receiving fingerprint data using an optical sensor. Background Art

[0003] Generally speaking, fingerprint recognition can be applied to identity recognition. Therefore, with the development of electronic device technology, fingerprint recognition functions have also been integrated into various electronic devices and widely used. Taking displays such as smart phones as an example, users can manage electronic devices directly through fingerprint recognition without remembering passwords. In addition, since the fingerprint recognition process is fast and difficult to imitate, fingerprint recognition can provide good convenience or security.

[0004] In order to enable the fingerprint sensor to receive the reflected light of the fingerprint in the corresponding area and sense the fingerprint contour of this area, a collimator is set on the external fingerprint sensor in the existing electronic device with an external fingerprint sensor to limit or filter the light received by the fingerprint sensor and reduce the interference of stray light. However, when the fingerprint sensor is embedded in an electronic device such as a display, the existing collimator cannot be set, so the fingerprint sensor is more susceptible to interference from stray light, resulting in poor fingerprint recognition effect. Summary of the invention

[0005] In one embodiment, the present invention provides an electronic device, which includes a first substrate, an optical sensor, a display unit, a second substrate and a first light blocking layer. The optical sensor is disposed on the first substrate. The display unit is disposed on the first substrate and includes a thin film transistor and an electrode, and the electrode is electrically connected to the thin film transistor. The second substrate includes a first side facing the optical sensor and a second side opposite to the first side. The first light blocking layer is disposed on the second side and includes a first opening. The first opening overlaps with the optical sensor, and the optical sensor overlaps with the thin film transistor. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1 It is a schematic diagram of component configuration of an electronic device according to a first embodiment of the present invention.

[0007] Figure 2 for Figure 1 The diagram is a top view of a light blocking layer and a color conversion layer of an electronic device.

[0008] Figure 3 for Figure 1A schematic top view of some components of the electronic device is shown in detail.

[0009] Figure 4 For along Figure 3 Schematic diagram of the structural cross-section along the section line AA'.

[0010] Figure 5 FIG. 2 is a schematic diagram showing the component configuration of an electronic device according to a second embodiment of the present invention.

[0011] Figure 6 FIG. 4 is a detailed top view of some components of an electronic device according to a third embodiment of the present invention.

[0012] Figure 7 For along Figure 6 Schematic diagram of the structural cross-section along section line BB'.

[0013] Figure 8 It is a schematic diagram of component configuration of an electronic device according to a fourth embodiment of the present invention.

[0014] Fig. 9 It is a schematic diagram of component configuration of an electronic device according to a fifth embodiment of the present invention.

[0015] Description of reference numerals: 31-first active layer; 32-second active layer; 61-array substrate structure; 62-opposite substrate structure; 100, 200, 300, 400, 500-electronic device; 110-first substrate; 120-circuit structure layer; 122-first conductive layer; 124-second conductive layer; 126-third conductive layer; 128-fourth conductive layer; 129-transparent conductive layer; 130-display medium layer; 140-second substrate; 140a-first side; 140b-second side; 210-third substrate; 210a-third side; 210b-fourth side; IN1-IN8--insulating layer; 410-optical film layer; 410a-protrusion structure; AH1, AH2-adhesive layer; BE-first electrode; BF-buffer layer; BL-backlight layer; CF-color photoresist layer; CF1-first color part; CF2-second color part; CF3-third color part; COV-cover plate; D1-first direction; D2-second direction; D3-third direction; Db, Df-distance; DE- Drain; DOP-display opening; DT-sensing switch element; DU-display unit; FG-finger; FS-optical sensor; GE-gate; L_1, L_2, R_1~R_6-light; LB-bottom light shielding layer; LS1-first light blocking layer; LS1a-first outer surface; LS2-second light blocking layer; LS2a-second outer surface; LS3-third light blocking layer; LS3a-third outer surface; OP1-first opening; OP2-second opening; OP3-third opening; PE-image pixel electrode; PL-protective layer; PS1-first semiconductor layer; PS2-second semiconductor layer; PS3-third semiconductor layer; Sa, Sb-size; SE-source; SI-input connection structure; SL1-scan line; SL2-data line; SL3-third wire; SL4-fourth wire; SO-output connection structure; ST-display switch element; SU-sensing unit; SPX1-first sub-pixel; SPX2-second sub-pixel; SPX3-third sub-pixel; TE-second electrode; θ-angle. DETAILED DESCRIPTION

[0016] The present invention can be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that in order to facilitate the reader's understanding and simplify the drawings, the multiple drawings in the present invention only depict a portion of the electronic device, and the specific components in the drawings are not drawn according to the actual scale. In addition, the number and size of each component in the drawings are only for illustration and are not intended to limit the scope of the present invention.

[0017] Certain words are used throughout the specification and the claims that follow to refer to specific components. It should be understood by those skilled in the art that electronic equipment manufacturers may refer to the same components by different names. This document does not intend to distinguish between components that have the same function but different names. In the following specification and claims, the words "include", "contain", "have" and the like are open-ended words, and therefore should be interpreted as "including but not limited to..." Therefore, when the terms "include", "contain" and / or "have" are used in the description of the present invention, they specify the existence of corresponding features, areas, steps, operations and / or components, but do not exclude the existence of one or more corresponding features, areas, steps, operations and / or components.

[0018] When a corresponding component such as a film layer or region is referred to as being "on another component (or its variant)", it can be directly on the other component, or other components may exist between the two. On the other hand, when a component is referred to as being "directly on another component (or its variant)", there is no component between the two.

[0019] It should be understood that when a component or a film layer is referred to as being "connected to" another component or a film layer, it can be directly connected to the other component or film layer, or there can be an intervening component or film layer between the two. When a component is referred to as being "directly connected to" another component or a film layer, there can be no intervening components or film layers between the two. In addition, when a component is referred to as being "coupled to another component (or a variation thereof)", it can be directly connected to the other component, indirectly connected (e.g., electrically connected) to the other component through one or more components.

[0020] The terms "about," "substantially," or "substantially" are generally interpreted as within 20% of a given value or range, or within 10%, 5%, 3%, 2%, 1% or 0.5% of a given value or range.

[0021] Although terms such as "first", "second", "third", etc. may be used to describe or name different components, these components are not limited to these terms. These terms are only used to distinguish one component from other components in the specification, and have nothing to do with the order in which these components are manufactured. The same terms may not be used in the claims, and may be replaced by "first", "second", "third", etc. according to the order in which the elements are declared in the claims. Accordingly, in the following description, the first component may be the second component in the claims.

[0022] It should be noted that the following embodiments may be implemented by replacing, reorganizing, or mixing features of several different embodiments without departing from the spirit of the present invention to implement other embodiments.

[0023] In the present invention, the electronic device may be any suitable type of electronic device, such as a display, a touch display, an antenna, etc., but is not limited thereto. The display of the present invention may be a liquid crystal display, an organic light emitting diode display, a light emitting diode display, a quantum dot material display, or other suitable displays. In the following, the electronic device is described by taking a liquid crystal display as an example. In addition, the display hereinafter may be a color display or a monochrome display, and the shape of the display may be a rectangle, a circle, a polygon, a shape with curved edges, or other suitable shapes.

[0024] See also Figure 1 and Figure 2 , Figure 2 For the top view, Figure 1 for Figure 2 , a cross-sectional view taken along the section line CC' in FIG. 1 . The electronic device 100 of the present embodiment includes a plurality of sub-pixels, for example, a first sub-pixel SPX1, a second sub-pixel SPX2, and a third sub-pixel SPX3 capable of generating light of different colors, which are arranged side by side. The first sub-pixel SPX1, the second sub-pixel SPX2, and the third sub-pixel SPX3 are, for example, red sub-pixels, green sub-pixels, and blue sub-pixels, respectively, thereby generating a color image, but the present invention is not limited thereto. According to some embodiments, the electronic device 100 includes: a first substrate 110, an optical sensor FS, and a second substrate 140. The optical sensor FS is disposed on the first substrate 110. The second substrate 140 includes a first side 140a facing the optical sensor FS, and a second side 140b opposite to the first side 140a. Light blocking layers are disposed on both sides of the second substrate 140. Specifically, a first light blocking layer LS1 is disposed on the first side 140a and includes a first opening OP1. A second light blocking layer LS2 is disposed on the second side 140b and includes a second opening OP2. The first opening OP1 and the second opening OP2 overlap with the optical sensor FS. In the present invention, the term "overlap" can be expressed as complete overlap or partial overlap. The first substrate 110 and the second substrate 140 are disposed opposite to each other, and the materials of the first substrate 110 and the second substrate 140 can each include glass, quartz, sapphire, polymer, or other suitable materials, wherein suitable polymers can be, for example, polyimide (PI) and polyethylene terephthalate (PET), but are not limited thereto. The first substrate 110 and the second substrate 140 can each be a flexible substrate or a hard substrate, but are not limited thereto. The materials of the first substrate 110 and the second substrate 140 can be the same or different from each other, and the first substrate 110 and the second substrate 140 can be a single-layer structure or a multi-layer structure.

[0025] According to some embodiments, the electronic device 100 includes an array substrate structure 61 and an opposing substrate structure 62. Specifically, the array substrate structure 61 may include a first substrate 110 and a circuit structure layer 120 disposed on the first substrate 110. The opposing substrate structure 62 may include a second substrate 140 and a first light blocking layer LS1 and a second light blocking layer LS2 disposed on both sides of the second substrate 140.

[0026] According to some embodiments, the electronic device 100 may include a display device, an antenna device, a sensing device or a splicing device, but is not limited thereto. The electronic device may be a bendable or flexible electronic device. The electronic device may include, for example, a liquid crystal or a light emitting diode (LED), and the light emitting diode may include, for example, an organic light emitting diode (OLED), a sub-millimeter light emitting diode (mini LED), a micro LED or a quantum dot light emitting diode (quantum dot, which may be, for example, QLED, QDLED), fluorescence, phosphor or other suitable materials, and the aforementioned may be arranged and combined in any manner, but is not limited thereto. The antenna device may be, for example, a liquid crystal antenna, but is not limited thereto. The splicing device may be, for example, a display splicing device or an antenna splicing device, but is not limited thereto. It should be noted that the electronic device may be any arrangement and combination of the aforementioned, but is not limited thereto. The following will use a display device as an electronic device or a splicing device to illustrate the content of the present invention, but the present invention is not limited thereto. When the electronic device 100 is a liquid crystal display, a display medium layer 130 may be disposed between the array substrate structure 61 and the opposite substrate structure 62, and the display medium layer 130 may be a liquid crystal layer. The electronic device 100 may further include a backlight layer BL and a color light-resist layer CF. The backlight layer BL may be disposed on a side of the first substrate 110 opposite to the second substrate 140, so that the backlight emitted by the backlight layer BL may pass through the first substrate 110 and the second substrate 140 in sequence. According to some embodiments, the color light-resist layer CF may be disposed in the opposite substrate structure 62, for example, the color light-resist layer CF may be disposed on the first side 140a of the second substrate 140, for example, may be disposed on the first light-blocking layer LS1, and may be closer to the first substrate 110 than the first light-blocking layer LS1. The color photoresist layer CF includes a first color portion CF1, a second color portion CF2 and a third color portion CF3, which are respectively located in the first sub-pixel SPX1, the second sub-pixel SPX2 and the third sub-pixel SPX3, wherein the first color portion CF1, the second color portion CF2 and the third color portion CF3 can convert the backlight into green light, red light and blue light respectively according to the colors that the first sub-pixel SPX1, the second sub-pixel SPX2 and the third sub-pixel SPX3 can produce. According to other embodiments, the color photoresist layer CF (not shown) can be disposed in the array substrate structure 61 to form a color filter on array (COA) structure.

[0027] According to some embodiments, the first light blocking layer LS1 and the second light blocking layer LS2 may include, for example, black ink, black metal, black resin and / or other suitable light shielding materials, and the materials of the first light blocking layer LS1 and the second light blocking layer LS2 may be the same or different. Figure 2 The first light blocking layer LS1 and / or the second light blocking layer LS2 may include a display opening DOP. The display opening DOP defines a display area or an aperture area to expose the color photoresist layer CF so that light in the sub-pixel can pass through the display opening DOP to generate an image. The area outside the display opening is a light shielding area. In addition, please refer to Figure 1 The electronic device 100 may include a cover plate COV disposed on the opposite substrate structure 62. The cover plate COV may be attached to the opposite substrate structure 62 via an adhesive layer AH1. Other film layers (not shown), such as a polarizing layer, may be selectively disposed between the adhesive layer AH1 and the second light blocking layer LS2.

[0028] Figure 3 for Figure 1 A detailed top view schematic diagram of some components of the electronic device shown, Figure 4 For along Figure 3 For the sake of simplicity, Figure 3 In the top view, only the first sub-pixel SPX1 and the second sub-pixel SPX2 are shown, and the color photoresist layer CF, the first light blocking layer LS1 and the second light blocking layer LS2 are omitted. Figure 4 , the circuit structure layer 120 is disposed on the first substrate 110. The circuit structure layer 120 may include a sensing unit SU and a display unit DU. The sensing unit SU may include the aforementioned optical sensor FS and a sensing switch element DT. The circuit structure layer 120 may include a first conductive layer 122, a second conductive layer 124, a third conductive layer 126 and a fourth conductive layer 128, which are disposed on the first substrate 110 and sequentially disposed in the direction of the second substrate 140. The circuit structure layer 120 may include multiple insulating layers to electrically insulate at least a portion of the first conductive layer 122, at least a portion of the second conductive layer 124, at least a portion of the third conductive layer 126 and at least a portion of the fourth conductive layer 128. Figure 4 As shown, the multiple insulating layers include, for example, insulating layers IN1, IN2, IN3-1, IN4, IN5, IN6, IN7 and IN8, but are not limited thereto. The number of insulating layers may be changed according to actual needs.

[0029] like Figure 3 As shown, the display unit DU may include a display switch element ST, a pixel electrode PE, a scan line (first conductive line) SL1 and a data line (second conductive line) SL2. Figure 4The display unit DU is omitted. Figure 4 Only the detailed cross-sectional structure of the optical sensor FS and the sensing switch element DT is shown, but the switch element ST is omitted. Figure 3 , the display switch element ST may be, for example, a thin film transistor, and the thin film transistor ST may include a gate, a first active layer 31, a source, and a drain. The first conductive layer 122 may include a scan line SL1, and the scan line SL1 may serve as a scan line of the display switch element ST. The second conductive layer 124 may include a data line SL2, and the data line SL2 may serve as a data line of the display switch element ST. The scan line SL1 may include a gate of the display switch element ST, and the data line SL2 may include a source of the display switch element ST. The pixel electrode PE may be electrically connected to the drain of the display switch element ST, but is not limited thereto. The first active layer 31 may have any suitable shape. Figure 3 In the embodiment, the first active layer 31 is U-shaped, but not limited thereto. The top view shape of the pixel electrode PE may correspond to the top view shape of the sub-pixel, and each corresponds to the display opening DOP. Optionally, the pixel electrode PE may have one or more slits, but not limited thereto. Figure 3 In the embodiment, the scan line SL1 may extend along the first direction D1, and the data line SL2 may extend along the second direction D2. The first direction D1 and the second direction D2 are not parallel to each other (for example, they may be perpendicular to each other). It should be noted that when the scan line SL1 and the data line SL2 are not straight lines, the scan line SL1 and the data line SL2 may still extend in the substantial extension direction. The third direction D3 is the direction from the first substrate 110 toward the second substrate 140, and may be perpendicular to the first direction D1 and the second direction D2.

[0030] like Figure 4 As described above, the sensing unit SU may include the aforementioned optical sensor FS and a sensing switch element DT. The sensing switch element DT may be electrically connected to the optical sensor FS. The sensing switch element DT may be a thin film transistor and may include a gate GE, a second active layer 32, a source SE, and a drain DE.

[0031] The materials of the conductive layers in the circuit structure layer 120 (for example, the first conductive layer 122, the second conductive layer 124, the third conductive layer 126, and the fourth conductive layer 128) may include metals, transparent conductive materials (for example, indium tin oxide (ITO), indium zinc oxide (IZO), etc.), other suitable conductive materials or combinations thereof. The insulating layer in the circuit structure layer 120 may include silicon oxide, silicon nitride, silicon oxynitride, other suitable insulating materials or combinations thereof, and the first active layer 31 and the second active layer 32 in the circuit structure layer 120 may include polycrystalline silicon, amorphous silicon, metal oxide semiconductors, other suitable semiconductor materials or combinations thereof.

[0032] According to some embodiments, in Figure 3 and Figure 4 In the embodiment, the gate (not shown) of the display switch element ST, the scan line SL1 and the gate GE of the sensing switch element DT may be formed by the first conductive layer 122. That is, the gate (not shown) of the display switch element ST, the scan line SL1 and the gate GE of the sensing switch element DT may be formed by the same conductive layer 122. The source and drain (not shown) of the display switch element ST, the data line SL2, and the source SE and drain DE of the sensing switch element DT may be formed by the second conductive layer 124. That is, the source and drain (not shown) of the display switch element ST, the data line SL2, and the source SE and drain DE of the sensing switch element DT may be formed by the same conductive layer 124. The first conductive layer 122 and the second conductive layer 124 may be metal. The first active layer 31 of the display switch element ST and the second active layer 32 of the sensing switch element DT may be formed by the same active layer (or semiconductor layer). That is, the sensing switch element DT and the display switch element ST may be manufactured by the same process, but are not limited thereto. In some embodiments, the types or film layer sequences of the sensing switch element DT and the display switch element ST may be different.

[0033] like Figure 3 As shown, each sensing unit SU is respectively located in a sub-pixel. That is, the first sub-pixel SPX1, the second sub-pixel SPX2 and the third sub-pixel SPX3 each have a sensing unit SU, but this is not limited to. According to other embodiments, it is not necessary for each sub-pixel to have a sensing unit SU. For example, although not shown in the figure, according to other embodiments, every three sub-pixels may have a sensing unit SU. That is, among three consecutive sub-pixels, only one sub-pixel has a sensing unit SU, and the other two sub-pixels do not have a sensing unit SU. Or, for example, every six sub-pixels may have a sensing unit SU. According to other embodiments, the density of the sensing units SU may be lower than the density of the sub-pixels.

[0034] Please refer to Figure 1 , the optical sensor FS can be used to receive the reflected light reflected by the finger FG, and generate sensing signals (such as voltage or current) of different sizes according to the intensity of the reflected light. Since the light intensity of the reflected light reflected by the finger FG will vary according to the fingerprint profile of the finger FG, the fingerprint profile can be determined by the size of the sensing signal generated by the optical sensor FS. For example, the light intensity reflected by the ridges may be greater than the light intensity reflected by the valleys. The optical sensor FS may include a thin film transistor, a PN diode, a PIN diode, a Schottky diode, or other suitable photoelectric conversion elements. Figure 4In the embodiment, the optical sensor FS includes a PIN diode, which includes a first semiconductor layer PS1, a second semiconductor layer PS2 and a third semiconductor layer PS3. For example, the first semiconductor layer PS1 may be a P-type semiconductor layer, the second semiconductor layer PS2 may be an intrinsic layer, and the third semiconductor layer PS3 may be an N-type semiconductor layer. The second semiconductor layer PS2 is located between the first semiconductor layer PS1 and the third semiconductor layer PS3. The semiconductor layers PS1, PS2 and PS3 may include amorphous silicon, polycrystalline silicon, metal oxide semiconductors, other suitable semiconductor materials, or a combination thereof, but not limited thereto. In addition, a first electrode BE and a second electrode TE may be respectively disposed on the lower and upper sides of the PIN diode, wherein the first electrode BE may be formed, for example, by the third conductive layer 126. For example, the third conductive layer 126 may be a metal. The second electrode TE may be formed, for example, by a transparent conductive material (such as indium tin oxide (ITO), indium zinc oxide (IZO), etc.), but not limited thereto. The sensing switch element DT may be electrically connected to the optical sensor FS and may be used to control the transmission of the sensing signal. In the present embodiment, the sensing switch element DT may be a thin film transistor, for example, and the source SE of the sensing switch element DT may be electrically connected to the first electrode BE of the optical sensor FS, but the present invention is not limited thereto.

[0035] refer to Figure 3 and Figure 4 In addition, according to some embodiments, the third conductive layer 126 may include a third conductive wire SL3, and the fourth conductive layer 128 may include a fourth conductive wire SL4. The third conductive wire SL3 may be used to electrically connect to the second electrode TE of the optical sensor FS to transfer the voltage to the optical sensor FS. The fourth conductive wire SL4 may be used to electrically connect to the drain DE of the sensing switch element DT, so that the sensing signal generated by the optical sensor FS can be transmitted to, for example, a data processing unit or a data recognition unit through the sensing switch element DT and the fourth conductive wire SL4 to obtain a fingerprint profile. According to some embodiments, the second electrode TE of the optical sensor FS is electrically connected to the input connection structure SI (for example, including the topmost transparent conductive layer 129). The fourth conductive wire SL4 may serve as an output line and be electrically connected to the sensing switch element DT through the output connection structure SO, but is not limited thereto. According to some embodiments, the circuit structure layer 120 may further include a fifth conductive layer (not shown), which is disposed on the fourth conductive layer 128, and at least a portion of the fifth conductive layer is electrically insulated from the fourth conductive layer 128, and the fifth conductive layer may be electrically connected to the second electrode TE of the optical sensor FS and may serve as a signal input line. In addition, in Figure 3 In the embodiment, the data line SL2, the third conductive line SL3 and the fourth conductive line SL4 may overlap each other and extend along the second direction D2, wherein the line widths of the third conductive line SL3 and the fourth conductive line SL4 are substantially the same ( Figure 3Indicated by SL3 (126) / SL4 (128), the line width of the data line SL2 is greater than the line width of the third wire SL3, but this is not limited to this. The wire configuration can be designed according to the needs. In addition, the circuit structure layer 120 can also selectively include a buffer layer BF and a bottom light shielding layer LB, which are disposed between the second active layer 32 and the first substrate 110.

[0036] In the present invention, the first light blocking layer LS1 includes a first opening OP1, and the second light blocking layer LS2 includes a second opening OP2, and the first opening OP1, the second opening OP2, and the optical sensor FS of the sensing unit SU correspond to each other in the third direction D3. In other words, the first opening OP1, the second opening OP2, and the optical sensor FS of the sensing unit SU overlap in the third direction D3. In the present embodiment, the size of the first opening OP1 may be substantially the same as the size of the second opening OP2, but is not limited thereto. It should be noted that the size of the opening described herein may be a diameter, a length, a width, or a dimension in a direction perpendicular to the third direction D3. In some embodiments, the sizes of the first opening OP1 and the second opening OP2 may be different, for example, the size of the first opening OP1 may be larger than or smaller than the size of the second opening OP2. It should be noted that although the size of the first opening OP1 and the size of the second opening OP2 can be designed to be the same size, there may still be differences in actual measurement due to process errors. For example, the size of the first opening OP1 and the second opening OP2 may differ by within 20%, 10%, 5%, 3%, 2%, 1% or 0.5%.

[0037] like Figure 2 As shown, when fingerprint sensing is performed, the sub-pixels adjacent to the sensing unit SU can be turned on, so that the backlight generated by the backlight layer BL will be emitted from the turned-on sub-pixels. Figure 1 As shown, after light is irradiated to the finger FG, the reflected light passes through the second opening OP2 and the first opening OP1 in sequence, and then irradiates the optical sensor FS of the sensing unit SU. Therefore, under this design, the first light blocking layer LS1 and the second light blocking layer LS2 can block stray light from irradiating the optical sensor FS, and allow the reflected light (such as light L_1, L_2) of the fingerprint feature point corresponding to this optical sensor FS to irradiate the optical sensor FS, so as to improve the accuracy of the sensing unit SU in detecting the fingerprint contour. According to some embodiments, for an optical sensor FS, if the reflected light is not reflected by the fingerprint feature point corresponding to this optical sensor FS, then this type of reflected light is stray light for this optical sensor FS. In addition, external ambient light can also be regarded as stray light for the optical sensor FS. For example, in Figure 1In the example, the light beams R_1 and R_2 may be the reflected light of the feature points corresponding to the adjacent optical sensors FS, and therefore, are stray light for the optical sensor FS in the middle, and the light beams R_1 and R_2 will be blocked by the second light blocking layer LS2 and will not irradiate the optical sensor FS in the middle. Figure 1 In the figure, the light beams R_3 and R_4 may be the reflected light of the feature point corresponding to the farther optical sensor FS or the external ambient light. Therefore, they are still stray light for the middle optical sensor FS, and the light beams R_3 and R_4 will be blocked by the first light blocking layer LS1 and will not irradiate the middle optical sensor FS.

[0038] On the other hand, the first opening OP1 of the first light blocking layer LS1 and the second opening OP2 of the second light blocking layer LS2 can filter out the reflected light within a specific angle range. Figure 1 In the embodiment, for an optical sensor FS, when the reflected light of the corresponding feature point has an angle within the angle θ relative to the third direction D3, the reflected light can be irradiated to the optical sensor FS through the second opening OP2 and the first opening OP1, thereby reducing the influence of stray light on the optical sensor FS. The angle θ can be any suitable value and can be designed according to actual needs. For example, the angle θ of the present embodiment can be 60 degrees, but is not limited to this. As can be seen from the above, in the present embodiment, the combination of the first opening OP1 of the first light blocking layer LS1 and the second opening OP2 of the second light blocking layer LS2 acts as a collimator of the optical sensor FS of the sensing unit SU embedded in the electronic device 100, that is, the collimator is integrated in the opposing substrate structure 62.

[0039] In order to achieve the function of screening the reflected light angle and / or blocking stray light, for example, the design can be based on Sa: Sb = (Db / 2): (Df + Db / 2) (e.g. Figure 1As shown), the accuracy and sensitivity of the sensing unit SU in detecting the fingerprint contour are improved. In the present embodiment, the size Sa is the size of the first opening OP1 of the first light blocking layer LS1, the distance Db is the distance between the first outer surface LS1a of the first light blocking layer LS1 and the second outer surface LS2a of the second light blocking layer LS2, and the distance Df is the distance between the outer surface of the electronic device 100 (i.e., the outer surface of the cover plate COV) and the second outer surface LS2a of the second light blocking layer LS2. In some embodiments, the design may be performed based on other optical relationships. According to some embodiments, the distance Db may be greater than or equal to 20 micrometers (μm) and less than or equal to 150 micrometers, the distance Df may be greater than or equal to 600 micrometers and less than or equal to 1000 micrometers, the size Sa may be greater than or equal to 1 micrometer and less than or equal to 10 micrometers, the ratio of the distance Db to the size Sa may be greater than or equal to 2 and less than or equal to 15, and / or the size Sb may be less than or equal to 400 micrometers, but is not limited thereto. The above embodiment takes the case where the light passes through the upper and lower sides of the first light blocking layer LS1 and the second light blocking layer LS2 as an example for calculation.

[0040] However, in other embodiments, when the sides of the first light blocking layer LS1 and the second light blocking layer LS2 are gently sloped, the size Sa of the first opening can be selectively measured based on the area close to the bottom of the substrate, for example. Figure 1 For example, the width of the first opening OP1 in the cross section is measured close to the second substrate 140 (at Figure 1 The width of the first opening OP1 is shown in the figure, and the dimension Sa and the dimension Sb are connected through the bottom of the second barrier layer LS2 (at Figure 1 That is, the left and right sides of the optical sensor FS of the sensing unit SU connected with the first opening OP1 will pass through the left and right sides of the first opening OP1 close to the bottom of the substrate and the left and right sides of the second opening OP1 close to the bottom of the substrate.

[0041] In addition, the electronic device 100 may further include other required film layers and structures. In some embodiments, the electronic device 100 may further selectively include a protective layer PL, which is disposed between the color light-blocking layer CF and the display medium layer 130. In some embodiments, the electronic device 100 may further include an alignment layer, which is disposed on the upper side and / or the lower side of the display medium layer 130. In some embodiments, the electronic device 100 may include at least one optical film layer. For example, the electronic device 100 may include two polarizers, one of which may be disposed between the backlight layer BL and the first substrate 110, and the other polarizer may be disposed between the second light-blocking layer LS2 and the cover plate COV, and the polarizers may be attached by adhesive materials, but are not limited thereto.

[0042] The electronic device of the present invention is not limited to the above-mentioned embodiments. Other embodiments will be disclosed below. However, in order to simplify the description and highlight the differences between each embodiment and the above-mentioned embodiment, the same reference numerals are used below to mark the same elements, and the repeated parts will not be repeated.

[0043] Please refer to Figure 5 , Figure 5 FIG. 2 is a schematic diagram showing the component configuration of an electronic device according to a second embodiment of the present invention. Figure 5As shown, the difference between the present embodiment and the first embodiment is that the electronic device 200 of the present embodiment includes three light blocking layers. In detail, the electronic device 200 of the present embodiment further includes a third substrate 210, wherein the material of the third substrate 210 may include glass, quartz, sapphire, polymer (such as polyimide (PI), polyethyleneterephthalate (PET)) and / or other suitable materials to serve as a flexible film layer or a hard film layer. The materials of the first substrate 110, the second substrate 140 and the third substrate 210 may be the same or different from each other, and the thicknesses of the first substrate 110, the second substrate 140 and the third substrate 210 may also be the same or different from each other. For example, the first substrate 110 and the second substrate 140 may include glass, and the third substrate 210 may include a polymer layer, but is not limited thereto. In the present embodiment, the third substrate 210 can be attached between the second substrate 140 and the cover plate COV through the adhesive layer AH2, wherein the third substrate 210 includes a third side 210a facing the second substrate 140 and a fourth side 210b relative to the third side 210a. The electronic device 200 further includes a third light blocking layer LS3, and the material of the third light blocking layer LS3 may include, for example, black ink, black metal, black resin and / or other suitable light-shielding materials. The materials of the first light blocking layer LS1, the second light blocking layer LS2 and the third light blocking layer LS3 may be the same or different from each other. In the present embodiment, the third light blocking layer LS3 is disposed on the fourth side 210b, so that the second light blocking layer LS2 is located between the first light blocking layer LS1 and the third light blocking layer LS3, but the arrangement is not limited to this. In some embodiments, the second light blocking layer LS2 may be disposed on the third side 210a of the third substrate 210. Similarly, the third light blocking layer LS3 includes a third opening OP3, and the third opening OP3 corresponds to the first opening OP1, the second opening OP2, and the optical sensor FS of the sensing unit SU in the third direction D3. In other words, the third opening OP3 overlaps the first opening OP1, the second opening OP2, and the optical sensor FS of the sensing unit SU in the third direction D3. In the present embodiment, the size of the third opening OP3 may be substantially the same as the size of the first opening OP1, but is not limited thereto. In some embodiments, the size of the third opening OP3 may be larger than or smaller than the size of the first opening OP1. In addition, in some embodiments, the opening of the middle light blocking layer may be smaller than or equal to the openings of the upper light blocking layer and the lower light blocking layer, that is, Figure 5 The size of the second opening OP2 can be smaller than or equal to the size of the first opening OP1 and the size of the third opening OP3. In addition, the distance between the second light blocking layer LS2 and the first light blocking layer LS1 in the third direction D3 and the distance between the second light blocking layer LS2 and the third light blocking layer LS3 in the third direction D3 can be designed according to actual needs. Figure 5In the embodiment, the distance between the second light blocking layer LS2 and the first light blocking layer LS1 in the third direction D3 may be the same as the distance between the second light blocking layer LS2 and the third light blocking layer LS3 in the third direction D3, but is not limited thereto.

[0044] When performing fingerprint sensing, the reflected light of the finger FG passes through the third opening OP3, the second opening OP2 and the first opening OP1 in sequence and irradiates the optical sensor FS of the sensing unit SU. Therefore, under this design, the first light blocking layer LS1, the second light blocking layer LS2 and the third light blocking layer LS3 can block stray light from irradiating the optical sensor FS and / or filter the angle of the reflected light to improve the accuracy of the sensing unit SU in detecting the fingerprint contour. In other words, in this embodiment, the combination of the first opening OP1 of the first light blocking layer LS1, the second opening OP2 of the second light blocking layer LS2 and the third opening OP3 of the third light blocking layer LS3 can serve as a collimator corresponding to the optical sensor FS of the sensing unit SU embedded in the electronic device 200. In particular, in Figure 5 In the embodiment, due to the presence of three light blocking layers, more stray light can be blocked compared to the first embodiment. For example, the light R_5 and R_6 having a larger angle relative to the third direction D3 can be blocked by the light blocking layer (such as the second light blocking layer LS2) located in the middle. In addition, the distance between the second light blocking layer LS2 and the first light blocking layer LS1 in the third direction D3 can be the same as or different from the distance between the second light blocking layer LS2 and the third light blocking layer LS3 in the third direction D3. In addition, in the present embodiment, the size Sa is the size of the first opening OP1, the distance Db is the distance between the first outer surface LS1a of the first light blocking layer LS1 and the third outer surface LS3a of the third light blocking layer LS3, and the distance Df is the distance between the outer surface of the electronic device 200 (i.e., the outer surface of the cover plate COV) and the third outer surface LS3a of the third light blocking layer LS3. The details of the size Sa, the size Sb, the distance Db and the distance Df can be referred to the first embodiment, and will not be repeated here.

[0045] In addition, in other embodiments, the third light blocking layer LS3 may be disposed in the second substrate 140 such that the third light blocking layer LS3 is located between the first light blocking layer LS1 and the second light blocking layer LS2 to achieve a similar effect.

[0046] Please refer to Figure 6 and Figure 7 , Figure 6 is a detailed top view of some components of an electronic device according to a third embodiment of the present invention, Figure 7 For along Figure 6 The schematic diagram of the structural cross section of the section line B-B'. Figure 6 and Figure 7As shown, the difference between this embodiment and the first embodiment is that the optical sensor FS of the sensing unit SU of the electronic device 300 of this embodiment can overlap the display switch element ST in the third direction D3. Therefore, the opening area of ​​the display opening DOP can be increased to increase the aperture ratio of the sub-pixel (for example, increase the area of ​​the pixel electrode PE). In addition, since the optical sensor FS can overlap the display switch element ST in the third direction D3, in order to avoid mutual interference between these elements in the third direction D3, the distance between the optical sensor FS and the display switch element ST in the third direction D3 can be increased. According to some embodiments, at least one or more layers in the display switch element ST and at least one or more layers in the sensing switch element DT are the same layer. For example, as described above, the active layer in the display switch element ST can be the same layer as the active layer in the sensing switch element DT. Therefore, increasing the distance between the optical sensor FS and the display switch element ST in the third direction D3 also means increasing the distance between the optical sensor FS and the sensing switch element DT in the third direction D3. Please also refer to Figure 4 and Figure 7 ,exist Figure 4 In the embodiment, there is an insulating layer IN3-1 between the optical sensor FS and the second conductive layer 124. Figure 7 In the embodiment, there are insulating layers IN3-1 and IN3-2 between the optical sensor FS and the second conductive layer 124. Figure 4 In comparison, this embodiment Figure 7 The circuit structure layer 120 may include an additional insulating layer IN3-2, Figure 7 There is a larger distance between the optical sensor FS and the second conductive layer 124, thereby reducing the mutual interference of these elements in the third direction D3.

[0047] Please refer to Figure 8 , Figure 8 FIG. 4 is a schematic diagram of the component configuration of an electronic device according to a fourth embodiment of the present invention. Figure 8 As shown, the electronic device 400 of the present embodiment has another type of collimator. In detail, the electronic device 400 may include an optical film layer 410 disposed on the second side 140b of the second substrate 140, wherein the optical film layer 410 may have the function of converging light. In the present embodiment, the optical film layer 410 may include a protrusion structure 410a, such as a microlens structure, but is not limited thereto. In the present embodiment, the optical sensor FS may correspond to the protrusion structure 410a, so that the reflected light of the fingerprint feature point corresponding to the optical sensor FS will converge and illuminate the optical sensor FS after passing through the protrusion structure 410a, and at the same time reduce the influence of stray light, thereby improving the accuracy of the sensing unit SU in detecting the fingerprint contour. Figure 8For example, the optical sensor FS may overlap with at least one protrusion structure 410a in the third direction D3, but the present invention is not limited thereto. The number of protrusion structures 410a corresponding to the optical sensor FS and the correspondence between the optical sensor FS and the protrusion structure 410a may be designed according to the requirements. In addition, in the present embodiment, the optical film layer 410 may be attached to the second side 140b of the second substrate 140 through the adhesive layer AH1 and located between the second substrate 140 and the cover plate COV, but the present invention is not limited thereto. According to some embodiments, such as Figure 8 As shown, one optical sensor FS is provided in one sub-pixel SPX, and one optical sensor FS corresponds to one protrusion structure 410a. According to other embodiments, although not shown in the figure, it is not necessary to provide one optical sensor FS in each sub-pixel SPX, for example, only one optical sensor FS may be provided in a plurality of sub-pixels SPX (for example, 3 or 6), and only one protrusion structure 410a may be provided in a plurality of sub-pixels SPX (for example, 3 or 6).

[0048] Please refer to Fig. 9 , Fig. 9 FIG. 5 is a schematic diagram showing the component configuration of an electronic device according to a fifth embodiment of the present invention. Fig. 9 As shown, the difference between this embodiment and the fourth embodiment is that the electronic device 500 of this embodiment further includes a first light blocking layer LS1 and a second light blocking layer LS2, wherein the first light blocking layer LS1 has a first opening OP1, and the second light blocking layer LS2 has a second opening OP2, and the first opening OP1 and the second opening OP2 correspond to the protrusion structure 410a, and the first opening OP1 and the second opening OP2 overlap with the optical sensor FS. The detailed description of the first light blocking layer LS1 and the second light blocking layer LS2 can refer to the description of the first embodiment, and will not be repeated here. Fig. 9 In the embodiment, the optical sensor FS, the first opening OP1, the second opening OP2 and the protrusion structure 410a may overlap in the third direction D3, but the present invention is not limited thereto. The number of protrusion structures 410a corresponding to the optical sensor FS, the first opening OP1 and the second opening OP2 and the correspondence between these structures may be designed according to the requirements. In the present embodiment, the combination of the first opening OP1, the second opening OP2 and the protrusion structure 410a may serve as a collimator for the optical sensor FS corresponding to the sensing unit SU embedded in the electronic device 500. In other embodiments, the electronic device 500 may include only one of the first light blocking layer LS1 and the second light blocking layer LS2. Therefore, in this case, the protrusion structure 410a may be combined with the first opening OP1 or the second opening OP2 to serve as a collimator for the optical sensor FS corresponding to the sensing unit SU embedded in the electronic device 500.

[0049] In summary, according to some embodiments, the electronic device is provided with an opening of the light blocking layer, which overlaps with the optical sensor. According to some embodiments, the electronic device is provided with a protruding structure of the optical film layer, which overlaps with the optical sensor. According to the structure of some embodiments, the interference of stray light on the sensing unit can be reduced to improve the accuracy of the sensing unit in detecting the fingerprint contour.

[0050] The above description is only an embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may be modified and varied in various ways, and the features of the various embodiments may be mixed and matched as long as they do not violate the spirit of the invention or conflict with each other. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. An electronic device, characterized in that: include: a first substrate; an optical sensor, disposed on the first substrate; A display unit is disposed on the first substrate and comprises: a thin film transistor; and an electrode electrically connected to the thin film transistor; a second substrate including a first side facing the optical sensor and a second side opposite to the first side; and a first light blocking layer disposed on the second side and comprising a first opening; The first opening overlaps with the optical sensor, and the optical sensor overlaps with the thin film transistor.

2. The electronic device according to claim 1, wherein: The electronic device further includes a second light blocking layer, the second light blocking layer is disposed on the first side, the second light blocking layer includes a second opening, and the second opening overlaps the first opening.

3. The electronic device according to claim 2, wherein: A size of the first opening is different from a size of the second opening.

4. The electronic device as claimed in claim 2, characterized in that: The size of the first opening is smaller than the size of the second opening.

5. The electronic device as claimed in claim 2, characterized in that: The electronic device further includes a third light blocking layer. The first light blocking layer is located between the third light blocking layer and the second light blocking layer. The third light blocking layer includes a third opening.

6. The electronic device as claimed in claim 5, characterized in that: The first opening, the second opening and the third opening overlap with each other.

7. The electronic device as claimed in claim 1, characterized in that: The electronic device further includes a covering layer, and the covering layer is disposed on the second substrate.

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