Electronic device

Abstract

An electronic device includes a first substrate, a plurality of phase shift units, a feed-in structure, and a signal processing element. The plurality of phase shifting units are arranged on the first substrate. The feed-in structure is disposed on the first substrate. The signal processing element receives a radio frequency signal and provides a processed radio frequency signal to the plurality of phase shift units through the feed-in structure.

Description

[0001] This invention is a divisional application of the invention with application number 201910837182.0, application date September 5, 2019, and invention name “electronic device”. Technical Field

[0002] The present invention relates to an electronic device, and more particularly to an electronic device having at least one signal processing element. Background Art

[0003] Electronic devices (such as liquid crystal antennas) can use resonance characteristics to allow radio frequency signals of specific frequencies to flow into the electronic device through a feeding structure. If the feeding structure has more bifurcated paths, the radio frequency signal may be more noisy and distorted. Therefore, it is necessary to continue to develop electronic devices to improve the above problems. Summary of the invention

[0004] An electronic device according to an embodiment of the present invention includes a first substrate, a plurality of phase shifting units, a feeding structure, and a signal processing element. The plurality of phase shifting units are disposed on the first substrate. The signal processing element receives a radio frequency signal and provides a processed radio frequency signal to the plurality of phase shifting units through the feeding structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] In order to make the above-mentioned objects, features and advantages of the present invention more clearly understood, the specific embodiments of the present invention are described in detail below in conjunction with the accompanying drawings, wherein:

[0006] Figure 1 Schematic diagram of an electronic device in some embodiments of the present invention.

[0007] Figure 2 For the present invention Figure 1 Schematic diagram of the internal structure of an electronic device in some embodiments.

[0008] Figure 3 Schematic diagram of an electronic device in some embodiments of the present invention.

[0009] Figure 4 Schematic diagram of an electronic device in some embodiments of the present invention.

[0010] Figure 5 Schematic diagram of an electronic device in some embodiments of the present invention.

[0011] Figure 6 For the present invention Figure 5 Schematic diagram of the internal structure of an electronic device in some embodiments.

[0012] Figure 7 For the present invention Figure 5Another schematic diagram of the internal structure of the electronic device in some embodiments.

[0013] Figure 8 Schematic diagram of the internal structure of an electronic device in some embodiments of the present invention.

[0014] Fig. 9 Schematic diagram of an electronic device in some embodiments of the present invention.

[0015] Fig.10 FIG. 4 is a circuit diagram of a signal processing element in some embodiments of the present invention.

[0016] Fig.11 FIG. 4 is a circuit diagram of a signal processing element in some embodiments of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] 100~Electronic Devices

[0019] 102~First substrate

[0020] 104~Second substrate

[0021] 106~Phase shift unit

[0022] 108~Feedback Structure

[0023] 108-1~Bifurcation feed line

[0024] 110~Signal processing element

[0025] 112~Signal feed point

[0026] 114~SMD components

[0027] 116~Control circuit

[0028] 118~Sealing

[0029] 120~Contact pad

[0030] 122, 124 ~ side tangent line

[0031] 126~ Input terminal of phase shift unit

[0032] A, B~ Area

[0033] d1~Distance

[0034] X, Y direction

[0035] 200~Liquid crystal material

[0036] 202~Dielectric layer

[0037] 204~Dielectric layer

[0038] 206~Ground metal layer

[0039] 600~Buffer layer

[0040] 602~Dielectric layer

[0041] 604~covering layer

[0042] 606, 608~Through hole structure

[0043] H~Hole

[0044] d2, d3~minimum distance

[0045] 1000, 1100~Equivalent circuit module

[0046] T~Gain transistor

[0047] L~Inductance

[0048] C~Capacitance

[0049] R~Resistance

[0050] Vcc~Input operating voltage

[0051] GND~ground

[0052] RFin~Input

[0053] RFout~output DETAILED DESCRIPTION

[0054] Figure 1 Schematic diagram of an electronic device in some embodiments of the present invention. Figure 1As shown, the electronic device 100 includes a first substrate 102, a second substrate 104, a plurality of phase shifting units 106, a feeding structure 108, a signal processing element 110, a signal feeding point 112, a plurality of patch elements 114, a control circuit 116, a sealing glue 118, and a plurality of contact pads 120. In this embodiment, the electronic device 100 may include a display device, an antenna device, a sensing device, a splicing device or other suitable devices, but is not limited thereto. The antenna device may be, for example, a liquid crystal antenna, but is not limited thereto. The splicing device may be, for example, a display splicing device, a sensor splicing device or an antenna splicing device, but is not limited thereto. It should be noted that the electronic device 100 may be any combination of the foregoing, but is not limited thereto. The feeding structure 108 is electrically coupled to the signal processing element 110, and the signal feeding point 112 is electrically coupled to the signal processing element 110. A radio frequency signal is inputted into the electronic device 100 from the signal feeding point 112, and the signal processing element 110 receives the radio frequency signal and provides the radio frequency signal processed by the signal processing element 110 to the plurality of phase shifting units 106 through the feeding structure 108. In the present embodiment, the plurality of phase shifting units 106 are electrically coupled to the control circuit 116 through the plurality of contact pads 120. In the present embodiment, the frequency of the radio frequency signal may be between 0.7 and 300 GHz (0.7 GHz ≤ frequency ≤ 300 GHz), but the present invention is not limited thereto. Furthermore, the distance between the phase shifting unit 106 and another phase shifting unit 106 is set between 0.5λ and 0.8λ (0.5λ ≤ distance ≤ 0.8λ) according to the wavelength λ of the radio frequency signal, and the distance may be the minimum distance between the phase shifting unit 106 and another phase shifting unit 106, but the present invention is not limited thereto. In the present embodiment, the phase shifting unit 106 may be spiral, but the present invention is not limited thereto. In the present embodiment, the phase shifting unit 106 may be a phase shifting electrode unit. exist Figure 1 In the figure, the direction from left to right is the X direction, and the direction from bottom to top is the Y direction.

[0055] Figure 2 For the present invention Figure 1 Schematic diagram of the internal structure of the electronic device in some embodiments. Figure 1 The internal structure diagram of each component in a region A is obtained by looking at the side tangent line 122 in the figure, and the internal structure diagram of each component in a region A is obtained by looking at the side tangent line 122 in the figure. Figure 1 The internal structure diagram of each component in a region B is obtained by looking sideways at the side cutting line 124 in the figure. Figure 2 It is obtained by merging the internal structure diagram of the components in area A with the internal structure diagram of the components in area B. Figure 2As shown, the phase shift unit 106 is disposed on the first substrate 102, and a dielectric layer 202 and a dielectric layer 204 are provided between the phase shift unit 106 and the first substrate 102. The electronic device 100 further includes a second substrate 104, and the second substrate 104 is disposed on the phase shift unit 106. The feeding structure 108 and the signal processing element 110 are both disposed on the first substrate 102, and the signal processing element 110 transmits the radio frequency signal from the signal feeding point 112 to the phase shift unit 106 through the feeding structure 108. In this embodiment, the present invention disposes the signal processing element 110 on the first substrate 102, so that the signal processing element 110 can be coupled to the feeding structure 108, so that the signal processing element 110 and the phase shift unit 106 (or the feeding structure 108) are disposed on the same side of the first substrate 102.

[0056] Reference Figure 1 In this embodiment, the feeding structure 108 has a plurality of bifurcated structures, and a plurality of bifurcated feeding lines 108-1 are formed on the bifurcated structures, and the terminal of the bifurcated feeding line 108-1 corresponds to (for example, opposite or parallel to) the input terminal 126 of the phase shift unit 106. The terminal of the bifurcated feeding line 108-1 couples the radio frequency signal to the phase shift unit 106 by electromagnetic radiation. In some embodiments, the distance d1 between the terminal of the bifurcated feeding line 108-1 and the input terminal 126 of the phase shift unit 106 is between 0.5 mm and 5 mm (0.5 mm ≤ distance d1 ≤ 5 mm), but the present invention is not limited thereto. According to some embodiments of the present invention, Figure 1 The distance d1 between the terminal of the bifurcated feeding line 108 - 1 and the input end 126 of the phase shifting unit 106 refers to the minimum distance between the two in the extending direction (eg, Y direction) of the bifurcated feeding line 108 - 1 .

[0057] In this embodiment, the patch element 114 is disposed on the second substrate 104 (see Figure 2 ), and the patch element 114 and the phase shift unit 106 at least partially overlap in the normal direction of the first substrate 102. Figure 2 The electronic device 100 further includes a grounding metal layer 206, which is disposed on a different side of the second substrate 104 from the patch element 114, and is located between the first substrate 102 and the second substrate 104. The electronic device 100 further includes a liquid crystal material 200, which is filled in a space substantially surrounded by the first substrate 102, the second substrate 104, and the sealant 118. It is worth noting that a hole H is left in the grounding metal layer 206 below the patch element 114, so that the RF signal after the phase is adjusted by the liquid crystal material 200 can be transmitted to the patch element 114 through the hole H, and then the patch element 114 radiates the RF signal.

[0058] In the present embodiment, the sealant 118 can surround the liquid crystal material 200 and at least partially overlap the feeding structure 108 in the normal direction of the first substrate 102. The sealant 118 can be used to support the second substrate 104 on the first substrate 102. The three can form a containing space to surround and seal the liquid crystal material 200 to form a liquid crystal cell (LC cell) to reduce the chance of the liquid crystal material 200 leaking out. In the present embodiment, the liquid crystal material 200 can be used to modulate the phase of the input radio frequency signal. The liquid crystal material 200 can include a highly anisotropic crystal such as a nematic liquid crystal, a cholesterol liquid crystal, or a blue liquid crystal, and the thickness thereof is between 3 μm and 150 μm (3 μm ≤ thickness ≤ 150 μm), but the present invention is not limited thereto. The control circuit 116 is electrically connected to the phase shift unit 106 through the contact pad 120 to provide a voltage to the phase shift unit 106. In the present embodiment, the voltage (e.g., low-frequency voltage) provided by the control circuit 116 forms an electric field between the phase shift unit 106 and the ground metal layer 206 to regulate the rotation of the liquid crystal material 200 molecules. When the RF signal passes through the regulated liquid crystal material 200 molecules, the phase of the RF signal can be changed, so that the patch element 114 can radiate a multi-beam field pattern and control the directionality of its radiation field pattern. In general applications, the voltage provided by the control circuit 116 ranges from ±0.1V to ±100V, but the present invention is not limited to this. In the present embodiment, the voltage provided by the control circuit 116 ranges from ±1V to ±15V, but the present invention is not limited to this.

[0059] Figure 3 Schematic diagram of an electronic device 100 according to some embodiments of the present invention. Figure 3 As shown, a plurality of signal processing components 110 are disposed on the first substrate 102, but do not overlap with the second substrate 104 in the normal direction of the first substrate 102. The plurality of signal processing components 110 are disposed on, for example, the upper side, left side, and right side edges of the first substrate 102, respectively, the feeding structure 108 surrounds the second substrate 104, and the plurality of signal processing components 110 are electrically connected to each other through the feeding structure 108. In some embodiments, the plurality of signal processing components 110 are also electrically connected to the signal feeding point 112 through the feeding structure 108.

[0060] Figure 4 Schematic diagram of an electronic device according to some embodiments of the present invention. Figure 4As shown, the electronic device 100 includes a plurality of signal feeding points 112, for example, 5 signal feeding points 112, but the present invention is not limited thereto, and the plurality of signal feeding points 112 include a midpoint feed point located close to the center of the second substrate 104, and omnidirectional feed points distributed on the four edges of the upper, lower, left and right sides of the first substrate 102, wherein the omnidirectional feed point is electrically connected to the midpoint feed point and the signal processing element 110 through the feeding structure 108. The radio frequency signal is input to the electronic device 100 from the midpoint feed point and the omnidirectional feed point, respectively. In some embodiments, the midpoint feed point and the omnidirectional feed point can be disposed on different surfaces of the first substrate 102, and electrically connected to each other using through holes. In the present embodiment, the minimum distance d2 between the signal processing element 110 and the edge of the second substrate 104 is at least 5 micrometers (μm), but the present invention is not limited thereto. Furthermore, the minimum distance d3 between the signal processing element 110 and the signal feeding point 112 located at the lower edge of the first substrate 102 is at most 5 millimeters (mm), but the present invention is not limited thereto. According to some embodiments of the present invention, Figure 4 The minimum distance d2 between the signal processing element 110 and the edge of the second substrate 104 or the minimum distance d3 between the signal processing element 110 and the signal feeding point 112 located at the lower edge of the first substrate 102 refers to the minimum distance in the extension direction (eg, Y direction) of the bifurcated feeding line 108-1. Figure 3 and Figure 4 The present invention does not limit the number of signal processing elements 110 and signal feeding points 112 configured in the electronic device 100. Figures 1 to 4 In the embodiment of the present invention, since the height of the signal processing element 110 is greater than the height between the first substrate 102 and the second substrate 104, the signal processing element 110 can be disposed on the first substrate 102 and does not overlap with the second substrate 104 in the normal direction of the first substrate 102. In some embodiments of the present invention, the thickness of the signal processing element 110 can be between 10 μm and 1 mm (10 μm ≤ thickness ≤ 1 mm), so the signal processing element 110 is not disposed between the first substrate 102 and the second substrate 104, but the present invention is not limited thereto.

[0061] Figure 5 Schematic diagram of an electronic device according to some embodiments of the present invention. Figure 6 For the present invention Figure 5 Schematic diagram of the internal structure of an electronic device in some embodiments. Figure 5 and Figure 6 As shown, a plurality of signal processing components 110 (eg, three signal processing components 110) are disposed between the first substrate 102 and the second substrate 104. Figure 6In the embodiment of the present invention, a buffer layer 600, a dielectric layer 602, and a cover layer 604 are further included between the first substrate 102 and the phase shift unit 106. In one embodiment of the present invention, the signal processing element 110 is placed in the through-hole structure 608 of the dielectric layer 602 by using surface mount technology (SMT), and the signal processing element 110 is covered with a cover layer 604. In this embodiment, the signal processing element 110 can be a chip packaged by flip chip packaging, vertical packaging, etc. Taking flip chip packaging as an example, the signal processing element 110 of the present invention electrically couples the signal processing element 110 with the feeding structure 108 through a through-hole structure 608, and transmits the radio frequency signal processed by the signal processing element 110 to the phase shift unit 106 through a through-hole structure 606. The through-hole structure 606 and the through-hole structure 608 can be completed, for example, by dry etching and / or wet etching. The material of the through hole structure 606 and the through hole structure 608 may include any conductive metal, conductive oxide, anisotropic conductive film (ACF) conductive adhesive, conductive resin or other suitable conductive materials, but the present invention is not limited thereto.

[0062] In the present embodiment, the materials of the buffer layer 600 and the cover layer 604 may include an inorganic insulating layer and / or an organic insulating layer, and the thickness thereof is between 50 nm and 500 nm (50 nm ≤ thickness ≤ 500 nm), but the present invention is not limited thereto. The phase shift unit 106, the ground metal layer 206, the patch element 114, and the circuit elements or wires inside the signal processing element 110 in the electronic device 100 may include metals, such as molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or conductive metal oxides, such as indium tin oxide (ITO), indium zinc oxide (IZO), or stannous oxide (SnO), etc., but the present invention is not limited thereto. In addition, in this embodiment, in order to reduce the diffusion of the conductive wire components such as aluminum (Al) or the components of the substrate such as boron (B) ions on the first substrate 102 to other layers on the first substrate 102 at high process temperatures, causing stability degradation or functional variation, the buffer layer 600 can be used to isolate the first substrate 102 from other layers (such as the dielectric layer 602 or the cover layer 604). The cover layer 604 can be used to reduce the degradation of metal materials in the electronic device 100 by water, oxygen or metal ions in the environment.

[0063] Figure 7 For the present invention Figure 5 Another possible internal structure diagram of an electronic device in some embodiments. Figure 7As shown, the signal processing element 110 is manufactured by using a semiconductor process, such as a yellow light photolithography process, to manufacture the main circuit inside the signal processing element 110 on the first substrate 102, and is coupled to the feeding structure 108 by the through hole structure 606 and the through hole structure 608. After the signal processing element 110 is manufactured, the dielectric layer 602 and the cover layer 604 are respectively disposed on the signal processing element 110 in sequence. Figure 8 Schematic diagram of the internal structure of an electronic device according to some embodiments of the present invention. Figure 8 The signal processing element 110 and the phase shift unit 106 shown are arranged on different sides of the first substrate 102. In the present embodiment, the present invention forms a through-hole structure 610 on the first substrate 102 by drilling, and the through-hole structure 610 passes through the first substrate 102, so that the signal processing element 110 can be electrically connected to the feeding structure 108 through the through-hole structure 610. The drilling method may include laser drilling, grinding drilling or other suitable techniques. The pins connecting the signal processing element 110 at the drilled hole can be made of copper foil, silicon oxide aluminum, or ceramic conductive material, but not limited to this. The pins and the feeding structure are electrically coupled through the conductive material in the drilled hole, and the material in the drilled hole can be anisotropic conductive film (ACF) conductive glue or solder material, but the present invention is not limited to this. In the present embodiment, the first substrate 102 and the second substrate 104 may include glass, a wafer, or a flexible substrate, but the present invention is not limited to this. In the present embodiment, the back side of the first substrate 102 (i.e. Figure 8 At least one signal processing element 110 may be disposed on a side where the signal processing element 110 is located. Figure 6 and Figure 7 The electronic device 100 can manufacture the signal processing element 110 in a liquid crystal cell (LC cell) through a photomask process.

[0064] Fig. 9 Schematic diagram of an electronic device according to some embodiments of the present invention. Fig. 9 As shown, the electronic device 100, for example, includes a plurality of phase shifting units 106 of four blocks formed on a first substrate 102, and four second substrates 104 respectively cover the plurality of phase shifting units 106 of the four blocks. In other words, the second substrate 104 overlaps with the plurality of phase shifting units 106 in the normal direction of the first substrate 102. The signal processing element 110 can be disposed on the first substrate 102 and placed between adjacent second substrates 104, but does not overlap with the second substrate 104 in the normal direction of the first substrate 102. In this embodiment, at least one signal processing element 110 is included on the path of the feeding structure 108 on the first substrate 102. In this embodiment, if the signal processing element 110 can be packaged in advance and disposed between the first substrate 102 and the second substrate 104, for example Fig. 9The enlarged top view of the second substrate 104 on the right side shows that at least one signal processing component 110 can be placed on the first substrate 102 , and the at least one signal processing component 110 and the second substrate 104 overlap each other.

[0065] Fig.10 FIG. 1 is a circuit diagram of the signal processing element 110 according to some embodiments of the present invention. Fig.10 As shown, the signal processing element 110 includes an equivalent circuit module 1000, and the equivalent circuit module 1000 includes at least one inductor L, at least one capacitor C, at least one resistor R, and at least one gain transistor T. In one embodiment, the gain transistor T can be a bipolar transistor (BJT) or a junction field effect transistor (JFET), but the present invention is not limited thereto. The input terminal RF of the equivalent circuit module 1000 is in For receiving a radio frequency signal, the output terminal RF out The RF signal processed by the equivalent circuit module 1000 is output. Fig.10 For example, the gain transistor T is a bipolar transistor, whose emitter is coupled to a resistor R to the ground GND, whose collector is coupled to an inductor L and a capacitor C to the input operating voltage Vcc, and the inductor L and the capacitor C are connected in parallel to each other, and its collector is further connected to the output terminal RF of the equivalent circuit module 1000. out The base of the gain transistor T is coupled to a resistor R to the input operating voltage Vcc, and is further coupled to the input terminal RF of the equivalent circuit module 1000. in .

[0066] Fig.11 FIG. 1 is a circuit diagram of a signal processing element of some embodiments of the present invention. Fig.11 As shown, the signal processing element 110 includes an equivalent circuit module 1100. The equivalent circuit module 1100 includes at least one inductor L, at least one capacitor C, at least one resistor R, and at least one gain transistor T. In one embodiment, the gain transistor T may be a bipolar transistor (BJT) or a junction field effect transistor (JFET), but the present invention is not limited thereto. The input terminal RF of the equivalent circuit module 1100 is in For receiving a radio frequency signal, the output terminal RF out The RF signal processed by the equivalent circuit module 1100 is output. Fig.11 For example, the gain transistor T is a bipolar transistor, the emitter of the gain transistor T is coupled to its base, the emitter of the gain transistor T is coupled to an inductor L to the ground GND, and the emitter of the gain transistor T is connected to the input terminal RF of the equivalent circuit module 1100. inThe collector of the gain transistor T is coupled to a capacitor C and connected to the ground GND, and the collector of the gain transistor T is connected to the output terminal RF of the equivalent circuit module 1100. out Phase coupling.

[0067] In this embodiment, the signal processing element 110 receives a radio frequency signal and provides the processed radio frequency signal to the phase shift unit 106 through the feeding structure 108. In this embodiment, the signal processing element 110 may use an amplifier to amplify the amplitude of the received radio frequency signal. Fig.10 For example, when the signal processing element 110 is an amplifier, the resistor R can be set to a range of 50 ohms to 10 4 Ohm (50 ohm ≤ resistance R ≤ 10 4 Ohms), the inductance L can range from 1nH to 1000nH (1nH≤inductance L≤1000nH), and the capacitance C can range from 1pF to 1000pF (1pF≤capacitance C≤1000pF), and are adjusted accordingly according to the frequency of the RF signal and the gain ratio of the amplifier, but the present invention is not limited thereto. In the present embodiment, the signal processing element 110 can be used as an amplifier, and its gain ratio range is greater than 1 and less than or equal to 100 (1<gain ratio≤100). In some embodiments, the signal processing element 110 can use a waveform adjuster to convert the waveform of the received RF signal from the original sine wave waveform to a square wave waveform, a triangle wave waveform, or a sawtooth wave waveform. In some embodiments, the signal processing element 110 may use a half-wave rectifier to perform half-wave rectification on the received RF signal, or the signal processing element 110 may be used as a wave width modulator to adjust the cycle time (or frequency) of the received RF signal, but the present invention is not limited thereto. In another embodiment, the signal processing element 110 may use a noise filter to filter out (high frequency) noise and ripple contained in the received RF signal, but the present invention is not limited thereto.

[0068] The electronic device 100 of the present invention may include a plurality of signal processing elements 110 with different functions, and the plurality of signal processing elements 110 with different functions may be coupled to the feeding structure 108. For example, three signal processing elements 110 connected in series may be placed in a section of the feeding structure 108, the first signal processing element 110 being used to amplify the amplitude of the received RF signal, the second signal processing element 110 being used to filter out the noise in the received RF signal, and the third signal processing element 110 being used to adjust the period of the received RF signal, but the present invention is not limited thereto. In addition, the electronic device 100 of the present invention may also include a plurality of signal processing elements 110 with the same function or partially the same function.

[0069] Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some modifications and improvements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be based on the definition of the claims.

Claims

1. An electronic device, characterized in that: include: a first substrate; A feeding structure is disposed on the first substrate; A plurality of phase shifting units are disposed on the first substrate; a metal layer, disposed on the feeding structure, and having holes; and A signal processing element is disposed on the first substrate; The signal processing element receives a radio frequency signal, and provides a processed radio frequency signal to a plurality of phase shifting units through the feeding structure, and transmits the processed radio frequency signal through the hole.

2. The electronic device according to claim 1, wherein: The feeding structure has a plurality of branch structures.

3. The electronic device according to claim 1, wherein: The electronic device is an antenna device.

4. An electronic device, characterized in that: include: a first substrate; A plurality of phase shifting units are disposed on the first substrate; A wire structure, disposed on the first substrate, having a plurality of first wires and second wires connected to the plurality of first wires, wherein the extension direction of the plurality of first wires is different from the extension direction of the second wires, and the plurality of first wires respectively have ends; A plurality of metal elements are disposed on the conductive wire structure and are separated from the ends of the plurality of first conductive wires; and A signal processing element electrically connected to the conductor structure; The signal processing element provides a signal to one of the plurality of first wires through the second wire, and one of the plurality of metal elements transmits the signal.

5. The electronic device as claimed in claim 4, characterized in that: The wire diameter width of one of the plurality of first wires is smaller than the wire diameter width of the second wire.

6. The electronic device as claimed in claim 4, characterized in that: The signal processing components are placed using surface mount technology (SMT).

7. The electronic device as claimed in claim 4, characterized in that: The electronic device is an antenna device.

8. An electronic device, characterized in that: include: chip; a dielectric layer surrounding the chip and having holes; an electrode overlapping the dielectric layer; as well as A first conductive structure is disposed in the hole; The chip is electrically connected to the electrode through the first conductive structure.

9. The electronic device as claimed in claim 8, characterized in that: In the cross section, the electrode is higher than the chip along the thickness direction of the dielectric layer.

10. The electronic device as claimed in claim 8, characterized in that The invention further comprises a second conductive structure, wherein the second conductive structure is disposed under the chip.

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