Photoelectric device, preparation method thereof and display device

Abstract

The invention provides a photoelectric device, a preparation method thereof and a display device. The photoelectric device comprises a first electrode, a functional layer and a second electrode which are arranged in a stacked mode, the functional layer comprises multiple sub-functional layers, a first interface modification layer is arranged between at least two adjacent sub-functional layers, and the first interface modification layer is made of hyperbranched polymer. The hyperbranched polymer of the first interface modification layer has very strong adhesion at the interface between the adjacent sub-functional layers, and meanwhile, the intramolecular cavity of the hyperbranched polymer can perform structure reconstruction and absorb deformation energy in the bending process, so that the mechanical strength and toughness of the interface between the adjacent sub-functional layers can be improved; and cracks of each sub-functional layer are reduced or even avoided, leakage current is reduced, and the efficiency of the photoelectric device is improved.

Description

Technical Field

[0001] The present application belongs to the field of display technology, and in particular relates to an optoelectronic device and a preparation method thereof, and a display device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting devices (OLED) and quantum dot light-emitting devices (QLED). OLED has become the mainstream technology in the field of display technology due to its excellent display performance such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display. QLED has the advantages of saturated color of emitted light, adjustable wavelength, low start-up voltage, good solution processability, easy fine control of quantum dots, and high quantum yield of photoluminescence and electroluminescence. In recent years, it has become a strong competitor of OLED.

[0003] However, the functional layers of existing optoelectronic devices, such as the light-emitting layer, electron functional layer, hole functional layer, etc., have low fracture energy due to the lack of flexible skeletons and flexible segments. These functional layers are prone to severe cracks under mechanical stress, resulting in a significant reduction in the efficiency of the optoelectronic devices. Summary of the invention

[0004] Based on this, the embodiments of the present application provide an optoelectronic device and a method for manufacturing the same, and a display device.

[0005] In a first aspect, an embodiment of the present application provides a photoelectric device, comprising a first electrode, a functional layer, and a second electrode that are stacked, wherein the functional layer comprises a first electrode, a functional layer, and a second electrode that are stacked, wherein the functional layer comprises a plurality of sub-functional layers, a first interface modification layer is arranged between at least two adjacent sub-functional layers, and a material of the first interface modification layer comprises a hyperbranched polymer.

[0006] In a second aspect, an embodiment of the present application also provides a method for preparing a photoelectric device, the preparation method comprising the following steps: forming a first electrode on a pre-stretched elastic substrate; forming a functional layer comprising multiple sub-functional layers on the first electrode and forming a first interface modification layer between at least two adjacent sub-functional layers, the material of the first interface modification layer comprising a hyperbranched polymer; forming a second electrode on the functional layer; restoring the elastic substrate from a stretched state to an initial state, so that the first electrode, the functional layer, the first interface modification layer and the second electrode form a wrinkled structure, to obtain a photoelectric device.

[0007] In a third aspect, an embodiment of the present application further provides a display device, which includes the above-mentioned optoelectronic device, or the display device includes the optoelectronic device prepared by the above-mentioned preparation method.

[0008] In the optoelectronic device provided in the present application, a first interface modification layer is arranged between at least two adjacent sub-functional layers, and the material of the first interface modification layer includes a hyperbranched polymer. The hyperbranched polymer can effectively absorb and reduce deformation energy, thereby improving the mechanical strength and toughness of the interface between adjacent sub-functional layers, reducing or even avoiding the occurrence of cracks in each sub-functional layer, reducing leakage current, and thus improving the efficiency of the optoelectronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following is a brief introduction to the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can also be obtained based on these drawings without creative work. In the following description, the same figure numbers represent the same parts.

[0010] Figure 1 A schematic diagram of the first structure of the optoelectronic device provided in an embodiment of the present application.

[0011] Figure 2 A second structural schematic diagram of the optoelectronic device provided in an embodiment of the present application.

[0012] Figure 3 A third structural schematic diagram of the optoelectronic device provided in an embodiment of the present application.

[0013] Figure 4 A fourth structural schematic diagram of the optoelectronic device provided in an embodiment of the present application.

[0014] Figure 5 A fifth structural schematic diagram of the optoelectronic device provided in an embodiment of the present application.

[0015] Figure 6 A sixth structural schematic diagram of the optoelectronic device provided in an embodiment of the present application.

[0016] Figure 7 This is a seventh structural schematic diagram of the optoelectronic device provided in an embodiment of the present application.

[0017] Figure 8 This is a schematic diagram of the eighth structure of the optoelectronic device provided in an embodiment of the present application.

[0018] Fig. 9 A flow chart of a method for preparing a photoelectric device provided in an embodiment of the present application.

[0019] Fig.10 This is a SEM image of the light-emitting layer in the optoelectronic device prepared in Example 1.

[0020] Fig.11This is a SEM image of the light-emitting layer in the optoelectronic device prepared in Comparative Example 1.

[0021] Description of Figure Numbers:

[0022] 100. Photoelectric device; 110. First electrode; 120. Functional layer; 121. Light-emitting layer; 122. Electronic functional layer; 123. Hole functional layer; 130. Second electrode; 140. First interface modification layer; 150. Second interface modification layer; 160. Third interface modification layer. DETAILED DESCRIPTION

[0023] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0024] In the description of the present application, unless otherwise stated, the directional words used, such as "upper" and "lower", refer specifically to the directions of the drawings in the accompanying drawings. In addition, in the description of the present application, the term "including" means "including but not limited to". The term "exemplary" is used to mean "used as an example, illustration or description", and any embodiment described as "exemplary" is not necessarily to be construed as being more preferred or advantageous than other embodiments. The term "and / or" includes any and all combinations of one or more of the relevant listed items.

[0025] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present invention; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which are applicable regardless of the range.

[0026] Increasing the working area of ​​the device without changing the aperture ratio can improve the efficiency of photovoltaic devices or light-emitting devices, while the light absorption area of ​​conventional devices or the light-emitting area of ​​light-emitting devices are small. For the functional layers 120 of the optoelectronic device 100, such as the electronic functional layer 122, the light-emitting layer 121, the hole functional layer 123, etc., due to the lack of flexible skeletons and flexible segments, their fracture energy is low. Under mechanical stress, these functional layers 120 often produce serious cracks, especially the interface between the electron transport layer and the light-emitting layer 121 is particularly fragile. Small cracks formed during the bending process may develop into larger cracks during the operation of the optoelectronic device 100, which will lead to a significant reduction in the efficiency of the optoelectronic device 100.

[0027] To this end, the present application embodiment provides a photoelectric device 100, see Figures 1 to 8 The optoelectronic device 100 includes a first electrode 110, a functional layer 120, a second electrode 130 and a first interface modification layer 140. The first electrode 110, the functional layer 120 and the second electrode 130 are stacked, wherein the functional layer 120 includes a plurality of sub-functional layers, and the first interface modification layer 140 is arranged between at least two adjacent sub-functional layers. The material of the first interface modification layer 140 includes a hyperbranched polymer.

[0028] In the optoelectronic device 100 provided in the present application, a first interface modification layer 140 is arranged between at least two adjacent sub-functional layers, and the material of the first interface modification layer 140 includes a hyperbranched polymer. The strong polar groups in the hyperbranched polymer can combine with the dangling bonds, surface defects, surface ligands, etc. on the surface of the sub-functional layer by forming high-density hydrogen bonds or dipole effects, so it has strong adhesion at the interface between adjacent sub-functional layers, and the high flexibility of the hyperbranched polymer side chains helps to recombine hydrogen bond donors and acceptors, creating an adaptive dynamic hydrogen bond network, and at the same time, the intramolecular cavity of the hyperbranched polymer can undergo structural reconstruction and absorb deformation energy during the bending process. These unique properties enable the hyperbranched polymer to effectively absorb and reduce deformation energy, thereby improving the mechanical strength and toughness of the interface between adjacent sub-functional layers, reducing or even avoiding cracks in each sub-functional layer, reducing leakage current, and thereby improving the efficiency and life of the optoelectronic device 100.

[0029] In some embodiments of the present application, the first interface modification layer 140 forms a corrugated structure. Preferably, the first electrode 110, the functional layer 120, and the second electrode 130 also form a corrugated structure. The optoelectronic device 100 provided in the present application can transform the two-dimensional plane of the device working (light absorption or light emission) into a three-dimensional structure by introducing a corrugated structure, which is conducive to increasing the working area under the unit aperture ratio, and can increase the light absorption area under the unit aperture ratio for photovoltaic devices, and increase the light emitting area under the unit aperture ratio for light emitting devices, thereby improving the photoelectric conversion efficiency or light emitting efficiency of the optoelectronic device 100 under the unit aperture ratio.

[0030] Among them, one of the first electrode 110 and the second electrode 130 is an anode, and the other is a cathode. In some embodiments of the present application, the thickness range of the anode is 10nm to 100nm, for example, the thickness of the anode can be 10nm, 30nm, 40nm, 50nm, 60nm, 80nm or 100nm, etc.; the thickness range of the cathode is 15nm to 100nm, for example, the thickness of the cathode can be 15nm, 30nm, 40nm, 50nm, 60nm, 80nm or 100nm, etc.

[0031] Optionally, the first electrode 110 and the second electrode 130 are independently selected from a metal electrode, a carbon electrode, and a composite electrode formed by one or more of a doped or undoped metal oxide electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca and Mg; the material of the carbon electrode is selected from at least one of graphite, carbon nanotubes, graphene and carbon fiber; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO; the material of the composite electrode is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2.

[0032] In some embodiments of the present application, the thickness of the first interface modification layer 140 ranges from 1 nm to 50 nm, for example, the thickness of the first interface modification layer 140 can be 1 nm, 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm or 50 nm, etc., which can be set according to actual needs. Within the above thickness range, it can be ensured that the hyperbranched polymer in the first interface modification layer 140 provides a good interaction force for the interface, and it can also be avoided that the thickness of the interface modification layer 140 is too thick to affect charge injection and transmission.

[0033] In some embodiments of the present application, Figure 6 and Figure 8 As shown, a second interface modification layer 150 is disposed between the first electrode 110 and the functional layer 120, and the material of the second interface modification layer 150 includes a hyperbranched polymer, and the second interface modification layer 150 forms a wrinkled structure. Since the hyperbranched polymer can effectively absorb and reduce deformation energy, the mechanical strength and toughness of the interface between the first electrode 110 and the functional layer 120 can be improved, cracks in the first electrode 110 and the functional layer 120 can be reduced or even avoided, leakage current can be reduced, and the efficiency and life of the optoelectronic device 100 can be improved.

[0034] Optionally, the thickness of the second interface modification layer 150 ranges from 1 nm to 50 nm, for example, the thickness of the second interface modification layer 150 can be 1 nm, 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm or 50 nm, etc., which can be set according to actual needs. Within the above thickness range, it can be ensured that the hyperbranched polymer in the second interface modification layer 150 provides a good interaction force for the interface, and the thickness of the second interface modification layer 150 is too thick to affect charge injection and transmission.

[0035] In some embodiments of the present application, Figure 7 and Figure 8 As shown, a third interface modification layer 160 is disposed between the functional layer 120 and the second electrode 130. The material of the third interface modification layer 160 includes a hyperbranched polymer, and the third interface modification layer 160 forms a wrinkled structure. Since the hyperbranched polymer can effectively absorb and reduce deformation energy, the mechanical strength and toughness of the interface between the functional layer 120 and the second electrode 130 can be improved, cracks in the functional layer 120 and the second electrode 130 can be reduced or even avoided, leakage current can be reduced, and the efficiency and life of the optoelectronic device 100 can be improved.

[0036] Optionally, the thickness of the third interface modification layer 160 ranges from 1 nm to 50 nm, for example, the thickness of the third interface modification layer 160 can be 1 nm, 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm or 50 nm, etc., which can be set according to actual needs. Within the above thickness range, it can be ensured that the hyperbranched polymer in the third interface modification layer 160 provides a good interaction force for the interface, and the thickness of the third interface modification layer 160 is too thick to affect charge injection and transmission.

[0037] In some embodiments of the present application, the height difference between a protrusion and an adjacent groove in the corrugated structure is 5nm to 300nm, for example, it can be 5nm, 20nm, 35nm, 50nm, 100nm, 150nm, 200nm, 250nm or 300nm, etc.; the spacing between two adjacent protrusions in the corrugated structure is 50nm to 2000nm, for example, it can be 50nm, 100nm, 300nm, 500nm, 800nm, 1000nm, 1200nm, 1500nm, 1800nm ​​or 2000nm, etc.; the spacing between two adjacent grooves in the corrugated structure is 50nm to 2000nm, for example, it can be 50nm, 100nm, 300nm, 500nm, 800nm, 1000nm, 1200nm, 1500nm, 1800nm ​​or 2000nm.

[0038] In some embodiments of the present application, the hyperbranched polymer is a polyamidoamine-based hyperbranched polymer, which can be synthesized from a first monomer and a second monomer through an addition reaction, wherein the first monomer is N,N'-methylenebisacrylamide, and the second monomer is an alkyl diamine, and the molar ratio of the first monomer to the second monomer is 1:2 to 2:1.

[0039] Specifically, the structural formula of the first monomer is:

[0040] The structural formula of the second monomer is: The brackets [] represent repeating units, and n is 2 to 30.

[0041] It can be understood that the -NH2 end groups, carboxyl groups and other strong polar groups in the polyamidoamine hyperbranched polymer can combine with the dangling bonds, surface defects, surface ligands and the like on the surface of the sub-functional layer by forming high-density hydrogen bonds or dipole effects, and therefore have strong adhesion at the interface between adjacent sub-functional layers. In addition, the high flexibility of the side chains of the polyamidoamine hyperbranched polymer is conducive to the recombination of hydrogen bond donors and acceptors, creating an adaptive dynamic hydrogen bond network. At the same time, the intramolecular cavity of the polyamidoamine hyperbranched polymer can undergo structural reconstruction and absorb deformation energy during the bending process. These unique properties enable the polyamidoamine hyperbranched polymer to effectively absorb and reduce deformation energy, thereby improving the mechanical strength and toughness of the interface between adjacent sub-functional layers, reducing or even avoiding cracks in each sub-functional layer, reducing leakage current, and thereby improving the efficiency and life of the optoelectronic device 100.

[0042] Optionally, the polyamidoamine hyperbranched polymer can be prepared by an existing preparation method. In at least one embodiment, the preparation method of the polyamidoamine hyperbranched polymer can be: at 30°C, 12.332g of MBA (N,N'-methylenebisacrylamide) is added to a round-bottom flask containing a mixed solvent of 60mL of methanol and 30mL of deionized water, and then stirred until it is completely dissolved; then, 12.98g of HDA (hexamethylenediamine) is slowly dripped into the flask, and the mixture is stirred at 30°C for 24 hours; after the reaction, the solution is poured into a beaker containing 1000mL of acetone, and a precipitate is immediately generated; the crude product is washed three times with acetone, and then dried in a vacuum oven at 30°C for 48 hours to obtain the product polyamidoamine hyperbranched polymer.

[0043] Using the same method, polyamidoamine-based hyperbranched polymers with different chain lengths can be synthesized by using ethylenediamine (EDA), butanediamine (BDA) or octanediamine (ODA) instead of HAD.

[0044] Exemplarily, the structural formula of the polyamidoamine-based hyperbranched polymer may be:

[0045]

[0046] The brackets [] represent repeating units, and the number of each repeating unit independently ranges from 2 to 30.

[0047] In some embodiments of the present application, Figure 1As shown, the sub-functional layer includes a light-emitting layer 121 and an electronic functional layer 122, that is, the functional layer 120 includes two sub-functional layers, and the two sub-functional layers are the light-emitting layer 121 and the electronic functional layer 122; the electronic functional layer 122 is arranged between the light-emitting layer 121 and the first electrode 110 or between the light-emitting layer 121 and the second electrode, and a first interface modification layer 140 is arranged between the light-emitting layer 121 and the electronic functional layer 122.

[0048] Specifically, when the first electrode 110 is a cathode and the second electrode 130 is an anode, the electronic functional layer 122 is arranged between the light-emitting layer 121 and the first electrode 110; when the first electrode 110 is an anode and the second electrode 130 is a cathode, the electronic functional layer 122 is arranged between the light-emitting layer 121 and the second electrode 130.

[0049] The light-emitting layer 121 may be a quantum dot light-emitting layer, in which case the optoelectronic device 100 is a quantum dot light-emitting device; or, the light-emitting layer 121 may be a perovskite light-emitting layer or an organic light-emitting layer. The thickness of the light-emitting layer 121 may range from 10 nm to 60 nm, such as 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 40 nm, 50 nm or 60 nm, or the thickness of the light-emitting layer 121 may range from 10 nm to 25 nm.

[0050] Optionally, the material of the light-emitting layer 121 may be a quantum dot material, an organic light-emitting material or a perovskite material. The quantum dot material may be selected from, but not limited to, at least one of a single structure quantum dot and a core-shell structure quantum dot, the single structure quantum dot is selected from at least one of a II-VI group compound, a III-V group compound and an I-III-VI group compound, the II-VI group compound is selected from at least one of CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS, CdZnSeS, CdZnSeTe and CdZnSTe, the III-V group compound is selected from at least one of I At least one of nP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP and InAlNP, the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 and AgInS2; the core of the core-shell structure quantum dot is selected from any one of the above-mentioned single structure quantum dots, and the shell layer of the core-shell structure quantum dot includes one or more layers, wherein any shell material of the core-shell structure quantum dot is selected from at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS and ZnS.

[0051] Optionally, the electronic functional layer 122 may include an electron transport layer having electron transport properties and / or an electron injection layer having electron injection properties, that is, the electronic functional layer 122 may include one or both of an electron transport layer and an electron injection layer.

[0052] In the embodiment where the electronic functional layer 122 includes both an electron transport layer and an electron injection layer, the electron injection layer is disposed between the first electrode 110 and the light-emitting layer 121 or between the second electrode 130 and the light-emitting layer 121, and the electron transport layer is disposed between the light-emitting layer 121 and the electron injection layer. Specifically, when the first electrode 110 is an anode and the second electrode 130 is a cathode, the electron injection layer is disposed between the second electrode 130 and the light-emitting layer 121; when the first electrode 110 is a cathode and the second electrode 130 is an anode, the electron injection layer is disposed between the first electrode 110 and the light-emitting layer 121.

[0053] Optionally, the thickness of the electronic functional layer 122 ranges from 10 nm to 65 nm, for example, the thickness of the electronic functional layer 122 can be 10 nm, 20 nm, 30 nm, 40 nm, 50 nm or 65 nm, etc., which can be set according to actual needs. Among them, the thickness of the electron transport layer ranges from 20 nm to 45 nm, for example, the thickness of the electron transport layer can be 20 nm, 25 nm, 30 nm, 35 nm, 40 nm or 45 nm, etc.; the thickness of the electron injection layer ranges from 10 nm to 30 nm, for example, the thickness of the electron injection layer can be 10 nm, 20 nm or 30 nm, etc.

[0054] Among them, the material of the electron transport layer can be selected from but not limited to one or more of inorganic electron transport materials and organic electron transport materials. The inorganic electron transport material is selected from but not limited to one or more of metal oxides, doped metal oxides, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials. Specifically, the metal oxide is selected from one or more of ZnO, TiO2, SnO2, Al2O3, Ga2O3, V2O5, V3O8, CrO3, WO3, Fe2O3, Fe3O4, CuO, MoO2, Nb2O5, BaO, MoO3, CdO, BaO, Ta2O5, BaTiO3 and PbCrO4; the metal oxide in the doped metal oxide includes ZnO, TiO2, SnO2, Al2O3, Ga2O3, V2O5, V3O8, CrO3, WO3, Fe2O3, Fe3O4, CuO, MoO2, One or more of Nb2O5, BaO, MoO3, CdO, BaO, Ta2O5, BaTiO3 and PbCrO4, the doping elements include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga and Sn; the IIB-VIA semiconductor materials include one or more of ZnS, ZnSe and CdS; the IIIB-VA semiconductor materials include one or more of InP and GaP; the IB-IIIB-VIA semiconductor materials include one or more of CuInS and CuGaS. The organic electron transport material includes but is not limited to one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene compounds and hydroxyquinoline compounds.

[0055] Optionally, the material of the electron injection layer can be selected from one or more of LiF, MgP, MgF2, Al2O3, Ga2O3, ZnO, Cs2CO3, RbBr, Rb2CO3 and LiF / Yb.

[0056] In some embodiments of the present application, when the electronic functional layer 122 includes an electron transport layer and an electron injection layer, a first interface modification layer 140 is also provided between the electron transport layer and the electron injection layer. Such a design is more conducive to reducing strain cracks caused by mechanical stretching or contraction, thereby reducing leakage current and further improving device efficiency and life.

[0057] In some embodiments of the present application, Figure 2As shown, the sub-functional layer includes a light-emitting layer 121 and a hole functional layer 123, that is, the functional layer 120 includes two sub-functional layers, and the two sub-functional layers are the light-emitting layer 121 and the hole functional layer 123; the hole functional layer 123 is arranged between the light-emitting layer 121 and the first electrode or between the light-emitting layer 121 and the second electrode, and a first interface modification layer 140 is arranged between the light-emitting layer 121 and the hole functional layer 123.

[0058] Specifically, when the first electrode 110 is an anode and the second electrode 130 is a cathode, the hole functional layer 123 is arranged between the light-emitting layer 121 and the first electrode 110; when the first electrode 110 is a cathode and the second electrode 130 is an anode, the hole functional layer 123 is arranged between the light-emitting layer 121 and the second electrode 130.

[0059] Optionally, the hole functional layer 123 may include a hole transport layer having hole transport properties and / or a hole injection layer having hole injection properties, that is, the hole functional layer 123 may include one or both of a hole transport layer and a hole injection layer.

[0060] In the embodiment where the hole functional layer 123 includes a hole transport layer and a hole injection layer, the hole injection layer is disposed between the first electrode 110 and the light emitting layer 121 or between the second electrode 130 and the light emitting layer 121, and the hole transport layer is disposed between the light emitting layer 121 and the hole injection layer. Specifically, when the first electrode 110 is an anode and the second electrode 130 is a cathode, the hole injection layer is disposed between the second electrode 130 and the light emitting layer 121; when the first electrode 110 is a cathode and the second electrode 130 is an anode, the hole injection layer is disposed between the first electrode 110 and the light emitting layer 121.

[0061] In some embodiments of the present application, when the hole functional layer 123 includes a hole transport layer and a hole injection layer, a first interface modification layer 140 is also provided between the hole transport layer and the hole injection layer. Such a design is more conducive to reducing strain cracks caused by mechanical stretching or contraction, thereby reducing leakage current and further improving device efficiency and life.

[0062] Optionally, the thickness of the hole functional layer 123 ranges from 10 nm to 120 nm, for example, the thickness of the hole functional layer 123 can be 10 nm, 30 nm, 50 nm, 70 nm, 90 nm or 120 nm, etc., which can be set according to actual needs. Among them, the thickness of the hole transport layer ranges from 10 nm to 60 nm, for example, the thickness of the hole transport layer can be 10 nm, 25 nm, 30 nm, 40 nm, 50 nm or 60 nm, etc.; the thickness of the hole injection layer ranges from 20 nm to 60 nm, for example, the thickness of the hole injection layer can be 20 nm, 30 nm, 40 nm, 50 nm or 60 nm, etc.

[0063] The material of the hole transport layer can be selected from, but not limited to, 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)benzidine (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)benzidine (Poly-TPD). )-spiro(spiro-TPD), N,N'-di(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tri(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-(1-naphthyl)-triphenylamine (TCTA), 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, '-diamine (NPB), spiro NPB, poly (phenylene vinylene) (PPV), poly [2-methoxy-5- (2-ethylhexyloxy) -1,4-phenylene vinylene] (MEH-PPV), poly [2-methoxy-5- (3',7'-dimethyloctyloxy) -1,4-phenylene vinylene] (MOMO-PPV), 2,2',7,7'-tetrakis [N,N-di (4-methoxyphenyl) amino] -9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexyl bis [N,N-di (4-methylphenyl) aniline] (TAPC), 1,3-bis (carbazol-9-yl) benzene (MCP), polyaniline, One or more of polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped P-type gallium nitride, doped or undoped CrO3, doped or undoped CuO.

[0064] Optionally, the material of the hole injection layer can be selected from but not limited to one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3 (PEDOT:PSS:s-MoO3), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinodimethane (F4-TCQN), copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide.

[0065] In some embodiments of the present application, Figure 3 to Figure 5 As shown, the functional layer 120 includes a light-emitting layer 121, an electronic functional layer 122 and a hole functional layer 123, that is, the functional layer 120 includes three sub-functional layers, and the three sub-functional layers are respectively the light-emitting layer 121, the electronic functional layer 122 and the hole functional layer 123; one of the electronic functional layer 122 and the hole functional layer 123 is arranged between the light-emitting layer 121 and the first electrode and the other is arranged between the light-emitting layer 121 and the second electrode, and a first interface modification layer 140 is arranged between the light-emitting layer 121 and the electronic functional layer 122 and / or between the light-emitting layer 121 and the hole functional layer 123.

[0066] Specifically, when the first electrode 110 is a cathode and the second electrode 130 is an anode, the electron functional layer 122 is arranged between the light-emitting layer 121 and the first electrode 110, the hole functional layer 123 is arranged between the light-emitting layer 121 and the second electrode 130, and a first interface modification layer 140 is arranged between the light-emitting layer 121 and the electron functional layer 122 and / or a first interface modification layer 140 is arranged between the light-emitting layer 121 and the hole functional layer 123.

[0067] When the first electrode 110 is an anode and the second electrode 130 is a cathode, the electronic functional layer 122 is arranged between the light-emitting layer 121 and the second electrode 130, the hole functional layer 123 is arranged between the light-emitting layer 121 and the first electrode 110, and a first interface modification layer 140 is arranged between the light-emitting layer 121 and the electronic functional layer 122 and / or a first interface modification layer 140 is arranged between the light-emitting layer 121 and the hole functional layer 123. The optoelectronic device 100 provided in the embodiment of the present application can be a photovoltaic device or a light-emitting device, and the optoelectronic device 100 can be applied to photovoltaic panels, light-emitting panels, display panels or monochrome displays. It is understood that in addition to the above-mentioned functional layers 120, the optoelectronic device 100 can also be provided with some other functional layers that are conventionally used for the optoelectronic device 100 and help improve the performance of the optoelectronic device 100, such as a hole blocking layer, an interface modification layer 140, etc. The materials and thicknesses of the functional layers of the optoelectronic device 100 can be adjusted according to the photoelectric conversion requirements or light-emitting requirements of the optoelectronic device 100.

[0068] In some embodiments of the present application, the optoelectronic device 100 is a quantum dot light emitting diode, which can be a quantum dot light emitting diode of an upright structure or a quantum dot light emitting diode of an inverted structure. The substrate of the quantum dot light emitting diode of the upright structure is connected to the anode, and the substrate of the quantum dot light emitting diode of the inverted structure is connected to the cathode.

[0069] The present application also provides a method for preparing an optoelectronic device 100, which can be used to prepare the optoelectronic device 100 described above. Fig. 9 , the preparation method of the optoelectronic device comprises the following steps:

[0070] Step S100, forming a first electrode 110 on a pre-stretched elastic substrate;

[0071] Step S200, forming a functional layer 120 including multiple sub-functional layers on the first electrode 110 and forming a first interface modification layer 140 between at least two adjacent sub-functional layers, wherein the material of the first interface modification layer 140 includes a hyperbranched polymer;

[0072] Step S300, forming a second electrode 130 on the functional layer 120;

[0073] Step S400 , the elastic substrate is restored from the stretched state to the initial state, so that the first electrode 110 , the functional layer 120 , the first interface modification layer 140 and the second electrode 130 form a wrinkled structure, thereby obtaining the optoelectronic device 100 .

[0074] The elastic substrate may be a stretchable material such as PDMS, PS, PI, PDMS, PMMA, ABSEP, PE, PC, PF, PEN, PVP, PPX or PLA. Optionally, the ratio of the area of ​​the elastic substrate in the stretched state to the area of ​​the elastic substrate in the initial state is 1.2 to 1.3, for example, 1.2, 1.21, 1.22, 1.23, 1.24, 1.25, 1.26, 1.27, 1.28, 1.29 or 1.3, etc., which can be set according to actual needs.

[0075] In the step S300 , after the preparation of each layer structure of the optoelectronic device 100 is completed, the elastic substrate is unfixed, the stress of the elastic substrate is released to shrink it, and the elastic substrate is restored to its original state to form wrinkles on the optoelectronic device 100 , thereby increasing the surface area of ​​the optoelectronic device 100 .

[0076] In some embodiments of the present application, the functional layer 120 includes two sub-functional layers, namely a light-emitting layer 121 and an electronic functional layer 122, and the step 200 includes: sequentially forming a stacked light-emitting layer 121, a first interface modification layer 140 and an electronic functional layer 122 on the first electrode 110, or sequentially forming a stacked electronic functional layer 122, a first interface modification layer 140 and a light-emitting layer 121 on the first electrode 110.

[0077] Specifically, when the first electrode 110 is an anode and the second electrode 130 is a cathode, the step 200 includes: sequentially forming a stacked light-emitting layer 121, a first interface modification layer 140 and an electronic functional layer 122 on the first electrode 110. The forming of the second electrode 130 on the functional layer 120 (i.e., step S300) includes: forming the second electrode 130 on the electronic functional layer 122. When the first electrode 110 is a cathode and the second electrode 130 is an anode, the step S200 includes: sequentially forming a stacked electronic functional layer 122, a first interface modification layer 140 and a light-emitting layer 121 on the first electrode 110. The forming of the second electrode 130 on the functional layer 120 (i.e., step S300) includes: forming the second electrode 130 on the light-emitting layer 121.

[0078] In some embodiments of the present application, the functional layer 120 includes two sub-functional layers, namely a light-emitting layer 121 and a hole functional layer 123, and the step S200 includes: sequentially forming a stacked hole functional layer 123, a first interface modification layer 140 and a light-emitting layer 121 on the first electrode 110, or sequentially forming a stacked light-emitting layer 121, a first interface modification layer 140 and a hole functional layer 123 on the first electrode 110.

[0079] Specifically, when the first electrode 110 is an anode and the second electrode 130 is a cathode, the step S200 includes: sequentially forming a stacked hole functional layer 123, a first interface modification layer 140 and a light-emitting layer 121 on the first electrode 110. The forming of the second electrode 130 on the functional layer 120 (i.e., step S300) includes: forming the second electrode 130 on the light-emitting layer 121. When the first electrode 110 is a cathode and the second electrode 130 is an anode, the step S200 includes: sequentially forming a stacked light-emitting layer 121, a first interface modification layer 140 and a hole functional layer 123 on the first electrode 110. The forming of the second electrode 130 on the functional layer 120 (i.e., step S300) includes: forming the second electrode 130 on the hole functional layer 123.

[0080] In some embodiments of the present application, the functional layer 120 includes three sub-functional layers, namely, a light-emitting layer 121, an electronic functional layer 122, and a hole functional layer 123. Step S200 includes: sequentially forming a stacked hole functional layer 123, a light-emitting layer 121, a first interface modification layer 140, and an electronic functional layer 122 on the first electrode 110, or sequentially forming a stacked hole functional layer 123, a first interface modification layer 140, a light-emitting layer 121, and an electronic functional layer 122 on the first electrode 110, or sequentially forming a stacked hole functional layer 123, a first interface modification layer 140, a light-emitting layer 121, and an electronic functional layer 122 on the first electrode 110. 40, a light-emitting layer 121, a first interface modification layer 140 and an electronic functional layer 122, or an electronic functional layer 122, a first interface modification layer 140, a light-emitting layer 121 and a hole functional layer 123 are sequentially formed on the first electrode 110, or an electronic functional layer 122, a light-emitting layer 121, a first interface modification layer 140 and a hole functional layer 123 are sequentially formed on the first electrode 110, or an electronic functional layer 122, a first interface modification layer 140, a light-emitting layer 121, a first interface modification layer 140 and a hole functional layer 123 are sequentially formed on the first electrode 110.

[0081] Specifically, when the first electrode 110 is an anode and the second electrode 130 is a cathode, the step S200 includes: sequentially forming a stacked hole functional layer 123, a light-emitting layer 121, a first interface modification layer 140 and an electronic functional layer 122 on the first electrode 110, or sequentially forming a stacked hole functional layer 123, a first interface modification layer 140, a light-emitting layer 121 and an electronic functional layer 122 on the first electrode 110, or sequentially forming a stacked hole functional layer 123, a first interface modification layer 140, a light-emitting layer 121, a first interface modification layer 140 and an electronic functional layer 122 on the first electrode 110. The forming of the second electrode 130 on the functional layer 120 (i.e., step S300) includes: forming the second electrode 130 on the electronic functional layer 122.

[0082] When the first electrode 110 is an anode and the second electrode 130 is a cathode, the step S200 includes: sequentially forming a stacked electronic functional layer 122, a light-emitting layer 121, a first interface modification layer 140 and a hole functional layer 123 on the first electrode 110, or sequentially forming a stacked electronic functional layer 122, a first interface modification layer 140, a light-emitting layer 121 and a hole functional layer 123 on the first electrode 110, or sequentially forming a stacked electronic functional layer 122, a first interface modification layer 140, a light-emitting layer 121, a first interface modification layer 140 and a hole functional layer 123 on the first electrode 110. The forming of the second electrode 130 on the functional layer 120 (i.e., step S300) includes: forming the second electrode 130 on the hole functional layer 123.

[0083] Optionally, in step S200, the step of forming a first interface modification layer between at least two adjacent sub-functional layers includes: disposing a hyperbranched polymer on one of the two adjacent sub-functional layers to form a first interface modification layer 140, and then forming another sub-functional layer on the first interface modification layer 140. Exemplarily, the two adjacent sub-functional layers are defined as a first sub-functional layer and a second sub-functional layer, respectively, wherein the first sub-functional layer is first formed on the first electrode 110, and the step of forming a first interface modification layer between at least two adjacent sub-functional layers includes: disposing a hyperbranched polymer on the first sub-functional layer by a solution method, annealing to form the first interface modification layer 140, and then forming the second sub-functional layer on the first interface modification layer 140.

[0084] Optionally, in step S200, the step of forming a functional layer 120 including multiple sub-functional layers on the first electrode 110 includes: disposing a hyperbranched polymer on the first electrode 110 to form a second interface modification layer 150, and forming the functional layer 120 on the second interface modification layer 150. Exemplarily, a hyperbranched polymer can be disposed on the first electrode 110 by a solution method, and the second interface modification 150 can be formed after annealing.

[0085] In some embodiments of the present application, step S300 includes: disposing a hyperbranched polymer on the functional layer 120 to form a third interface modification layer 160, and forming a second electrode 130 on the third interface modification layer 160. Exemplarily, a hyperbranched polymer can be disposed on the functional layer 120 by a solution method, and after annealing, the third interface modification 160 is formed.

[0086] Optionally, in some embodiments of the present application, after the step of restoring the elastic substrate from the stretched state to the initial state, the following step is further included: maintaining the preset time at a preset temperature, the preset temperature being 60°C to 150°C, and the preset time being 1min to 60min. Exemplarily, the preset temperature may be 60°C, 70°C, 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C or 150°C, etc., and the preset time may be 1min, 5min, 10min, 15min, 20min, 25min, 30min, 35min, 40min, 45min, 50min, 55min or 60min, etc., which may be selected according to actual needs. It can be understood that while the wrinkled structure is prepared by stretching or shrinking, the functional layer 120 of the device will generate mechanical stress inside or at the interface due to the uneven deformation. Therefore, by heating (i.e., maintaining a preset temperature for a preset time), the thermal motion of atoms and molecules can be increased, the stress state inside the material can be changed, and the originally existing mechanical stress can be released, thereby obtaining a device with a stable structure and a wrinkled structure on the surface.

[0087] Specifically, in the above preparation method, the method of forming the first electrode 110, the light-emitting layer 121, the electronic functional layer 122, the hole functional layer 123, the first interface modification layer 140, the second electrode 130, the second interface modification layer 150 and the third interface modification layer 160 can be implemented by conventional techniques in the art, including but not limited to solution method and deposition method, wherein the solution method includes but is not limited to spin coating, coating, inkjet printing, scraping, dip pulling, soaking, spraying, rolling or casting; the deposition method includes chemical method and physical method, and the chemical method includes but is not limited to chemical vapor deposition, continuous ion layer adsorption and reaction method, anodization method, electrolytic deposition method or coprecipitation method. Physical methods include but are not limited to thermal evaporation coating method, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion plating method, physical vapor deposition method, atomic layer deposition method or pulsed laser deposition method. When the solution method is used to prepare the various layer structures including, a drying process needs to be added. Among them, the drying process can be an annealing process. Among them, the "annealing process" includes all treatment processes that can enable the wet film to obtain higher energy, thereby changing from a wet film state to a dry state. For example, the "annealing process" can only refer to a heat treatment process, that is, heating the wet film to a specific temperature, and then maintaining it for a specific time to allow the solvent in the wet film to fully evaporate; for example, the "annealing process" can also include a heat treatment process and a cooling process performed in sequence, that is, heating the wet film to a specific temperature, and then maintaining it for a specific time to allow the solvent in the first wet film to fully evaporate, and then cooling it at an appropriate speed to eliminate residual stress and reduce the risk of layer deformation and cracking of the dried functional layer 120.

[0088] Among them, the materials of each layer such as the first electrode 110, the light-emitting layer 121, the electronic functional layer 122, the hole transport layer, the first interface modification layer 140, the second electrode 130, the second interface modification layer 150 and the third interface modification layer 160 can refer to the relevant description in the previous text and will not be repeated here.

[0089] It is understandable that since inorganic materials are prone to cracking during the preparation of the film layer, especially during the wrinkle formation process, the present application preferably sets a first interface modification layer 140 including a hyperbranched polymer on the surface of a sub-functional layer using inorganic materials (such as a light-emitting layer 121 using a perovskite material and an electron transport layer using a metal oxide), which can effectively reduce or even avoid the occurrence of cracks in the film layer.

[0090] It is understandable that when the optoelectronic device 100 further includes other functional layers such as an electron blocking layer, a hole blocking layer and / or an interface modification layer 140 , the method for preparing the optoelectronic device 100 further includes the step of forming these functional layers.

[0091] It is understandable that the preparation method of the optoelectronic device may further include a packaging step. The packaging material may be acrylic resin or epoxy resin. The packaging may be machine packaging or manual packaging. UV curing glue sealing may be used. The concentrations of oxygen and water in the environment during the packaging step are both lower than 0.1ppm to ensure the stability of the optoelectronic device.

[0092] The embodiment of the present application further provides a display device, which includes the above-mentioned optoelectronic device 100, or the display device includes the optoelectronic device 100 prepared by the above-mentioned preparation method. The display device can be any electronic product with a display function, and the electronic product includes but is not limited to a smart phone, a tablet computer, a laptop computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a car display, a television or an e-book reader, wherein the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0093] The technical scheme and technical effects of the present application will be described in detail below through specific examples and comparative examples. The following examples are only partial examples of the present application and do not specifically limit the present application.

[0094] Example 1

[0095] (1) The preparation method of polyamidoamine hyperbranched polymer is as follows:

[0096] At a reaction temperature of 30°C, 12.332g of MBA (N,N'-methylenebisacrylamide) was added to a round-bottom flask containing a mixed solvent of 60mL of methanol and 30mL of deionized water, and then stirred until it was completely dissolved; then, 12.98g of HDA (hexamethylenediamine) was slowly dripped into the above round-bottom flask, and then stirred at 30°C for 24 hours; after the reaction, the solution was poured into a beaker containing 1000mL of acetone to produce a precipitate; the precipitate was washed three times with acetone, and then dried in a vacuum oven at 30°C for 48 hours to obtain a polyamide-amine-based hyperbranched polymer.

[0097] (2) The preparation method of the photoelectric device is as follows:

[0098] A circular PDMS elastic substrate with a radius of about 2 cm and a thickness of 100 μm is provided, 8 edge sites are uniformly selected around the circumference of the elastic substrate as stretching sites, the elastic substrate is mechanically stretched by 20%, and fixed on a rigid planar substrate;

[0099] A 100 nm thick Ag cathode was prepared on the pre-stretched elastic substrate;

[0100] A 45 nm thick ZnO was prepared on the cathode as an electron transport layer;

[0101] A polyamidoamine-based hyperbranched polymer with a thickness of 10 nm is prepared on the electron transport layer as a first interface modification layer 140;

[0102] A 40 nm thick CdSe / ZnS quantum dot material is prepared on the first interface modification layer 140 as the light emitting layer 121;

[0103] A 40 nm thick TFB material is prepared on the light emitting layer 121 as a hole injection layer;

[0104] A 50 nm thick PEDOT:PSS was prepared on the hole injection layer as an anode;

[0105] The elastic substrate is unfixed and allowed to stand for 30 minutes to recover from the stretched state to the initial state, and the cathode, the electron transport layer, the first interface modification layer 140, the light-emitting layer 121, the hole injection layer and the anode form a wrinkled structure to obtain the optoelectronic device 100.

[0106] Example 2

[0107] (1) The preparation method of polyamidoamine-based hyperbranched polymer is the same as that in Example 1.

[0108] (2) The preparation method of the photoelectric device is as follows:

[0109] A circular PDMS elastic substrate with a radius of about 2 cm and a thickness of 100 μm is provided, 8 edge sites are uniformly selected around the circumference of the elastic substrate as stretching sites, the elastic substrate is mechanically stretched by 20%, and fixed on a rigid planar substrate;

[0110] A 100 nm thick Ag cathode was prepared on the pre-stretched elastic substrate;

[0111] A 45 nm thick ZnO was prepared on the cathode as an electron transport layer;

[0112] A CdSe / ZnS quantum dot material with a thickness of 40 nm is prepared on the electron transport layer as the light emitting layer 121;

[0113] A polyamidoamine-based hyperbranched polymer with a thickness of 10 nm is prepared on the light-emitting layer 121 as the first interface modification layer 140;

[0114] A 40 nm thick TFB material is prepared on the first interface modification layer 140 as a hole injection layer;

[0115] A 50 nm thick PEDOT:PSS was prepared on the hole injection layer as an anode;

[0116] The elastic substrate is unfixed and allowed to stand for 30 minutes to recover from the stretched state to the initial state, and the cathode, electron transport layer, light-emitting layer 121, first interface modification layer 140, hole injection layer and anode form a wrinkled structure to obtain the optoelectronic device 100.

[0117] Example 3

[0118] (1) The preparation method of polyamidoamine-based hyperbranched polymer is the same as that in Example 1.

[0119] (2) The preparation method of the photoelectric device is as follows:

[0120] A circular PDMS elastic substrate with a radius of about 2 cm and a thickness of 100 μm is provided, 8 edge sites are uniformly selected around the circumference of the elastic substrate as stretching sites, the elastic substrate is mechanically stretched by 20%, and fixed on a rigid planar substrate;

[0121] A 100 nm thick Ag cathode was prepared on the pre-stretched elastic substrate;

[0122] A 45 nm thick ZnO was prepared on the cathode as an electron transport layer;

[0123] A polyamidoamine-based hyperbranched polymer with a thickness of 10 nm is prepared on the electron transport layer as the first interface modification layer 140;

[0124] A 40 nm thick CdSe / ZnS quantum dot material is prepared on the first first interface modification layer 140 as the light emitting layer 121;

[0125] A polyamidoamine-based hyperbranched polymer with a thickness of 10 nm is prepared on the light-emitting layer 121 as the second first interface modification layer 140;

[0126] A 40 nm thick TFB material is prepared on the second first interface modification layer 140 as a hole injection layer;

[0127] A 50 nm thick PEDOT:PSS was prepared on the hole injection layer as an anode;

[0128] The elastic substrate is unfixed and allowed to stand for 30 minutes to recover from the stretched state to the initial state. The cathode, the electron transport layer, the two first interface modification layers 140, the light-emitting layer 121, the hole injection layer and the anode form a wrinkled structure to obtain the optoelectronic device 100.

[0129] Example 4

[0130] (1) The preparation method of polyamidoamine-based hyperbranched polymer is the same as that in Example 1.

[0131] (2) The preparation method of the photoelectric device is as follows:

[0132] A circular PDMS elastic substrate with a radius of about 2 cm and a thickness of 100 μm is provided, 8 edge sites are uniformly selected around the circumference of the elastic substrate as stretching sites, the elastic substrate is mechanically stretched by 20%, and fixed on a rigid planar substrate;

[0133] A 100 nm thick Ag cathode was prepared on the pre-stretched elastic substrate;

[0134] A 45 nm thick ZnO was prepared on the cathode as an electron transport layer;

[0135] A polyamidoamine-based hyperbranched polymer with a thickness of 10 nm is prepared on the electron transport layer as a first interface modification layer 140;

[0136] A 40 nm thick CdSe / ZnS quantum dot material is prepared on the first interface modification layer 140 as the light emitting layer 121;

[0137] A 40 nm thick TFB material is prepared on the light emitting layer 121 as a hole injection layer;

[0138] A polyamidoamine-based hyperbranched polymer with a thickness of 10 nm is prepared on the hole injection layer as a second interface modification layer 150;

[0139] A 50 nm thick PEDOT:PSS is prepared on the second interface modification layer 150 as an anode;

[0140] The elastic substrate is unfixed and allowed to stand for 30 minutes to recover from the stretched state to the initial state, and the cathode, electron transport layer, first interface modification layer 140, second interface modification layer 150, light-emitting layer 121, hole injection layer and anode form a wrinkled structure to obtain the optoelectronic device 100.

[0141] Example 5

[0142] (1) The preparation method of polyamidoamine-based hyperbranched polymer is the same as that in Example 1.

[0143] (2) The preparation method of the photoelectric device is as follows:

[0144] A circular PDMS elastic substrate with a radius of about 2 cm and a thickness of 100 μm is provided, 8 edge sites are uniformly selected around the circumference of the elastic substrate as stretching sites, the elastic substrate is mechanically stretched by 20%, and fixed on a rigid planar substrate;

[0145] A 100 nm thick Ag cathode was prepared on the pre-stretched elastic substrate;

[0146] A polyamidoamine-based hyperbranched polymer with a thickness of 10 nm is prepared on the cathode as a third interface modification layer 160;

[0147] A 45 nm thick ZnO is prepared on the third interface modification layer 160 as an electron transport layer;

[0148] A polyamidoamine-based hyperbranched polymer with a thickness of 10 nm is prepared on the electron transport layer as a first interface modification layer 140;

[0149] A 40 nm thick CdSe / ZnS quantum dot material is prepared on the first interface modification layer 140 as the light emitting layer 121;

[0150] A 40 nm thick TFB material is prepared on the light emitting layer 121 as a hole injection layer;

[0151] A 50 nm thick PEDOT:PSS was prepared on the hole injection layer as an anode;

[0152] The elastic substrate is unfixed and allowed to stand for 30 minutes to recover from the stretched state to the initial state, and the cathode, the third interface modification layer 160, the electron transport layer, the first interface modification layer 140, the light-emitting layer 121, the hole injection layer and the anode form a wrinkled structure to obtain the optoelectronic device 100.

[0153] Comparative Example 1

[0154] (1) The preparation method of polyamidoamine-based hyperbranched polymer is the same as that in Example 1.

[0155] (2) The preparation method of the photoelectric device is as follows:

[0156] A circular PDMS elastic substrate with a radius of about 2 cm and a thickness of 100 μm is provided, 8 edge sites are uniformly selected around the circumference of the elastic substrate as stretching sites, the elastic substrate is mechanically stretched by 20%, and fixed on a rigid planar substrate;

[0157] A 100 nm thick Ag cathode was prepared on the pre-stretched elastic substrate;

[0158] A 45 nm thick ZnO was prepared on the cathode as an electron transport layer;

[0159] A CdSe / ZnS quantum dot material with a thickness of 40 nm is prepared on the electron transport layer as the light emitting layer 121;

[0160] A 40 nm thick TFB material is prepared on the light emitting layer 121 as a hole injection layer;

[0161] A 50 nm thick PEDOT:PSS was prepared on the hole injection layer as an anode;

[0162] The elastic substrate is unfixed and allowed to stand for 30 minutes to recover from the stretched state to the initial state, and the cathode, the electron transport layer, the light-emitting layer 121 , the hole injection layer and the anode form a wrinkled structure to obtain the optoelectronic device 100 .

[0163] The external quantum efficiency (EQE, %) and the time required for the brightness to decay from 100% to 95% at 1000 nits (T95@1000nits, h) of the optoelectronic devices of Examples 1 to 5 and Comparative Example 1 were tested, and the test results are shown in Table 1. The larger the value of the external quantum efficiency EQE, the higher the luminous efficiency of the optoelectronic device; the larger the value of T95@1000nits, the longer the life of the optoelectronic device.

[0164] The test method for external quantum efficiency EQE is: using FPD optical property measurement equipment from Foster, controlling the efficiency test system built by QE PRO spectrometer, Keithley 2400, and Keithley 6485 through LabView, measuring parameters such as voltage, current, brightness, and luminescence spectrum, and calculating the device external quantum efficiency EQE.

[0165] The test method for the life span T95@1000nit is: in CDA gas, under constant current or voltage drive, measure the time taken for the device brightness to decay to a certain proportion of the maximum brightness, and the time taken for the brightness to decay to 95% of the maximum brightness is defined as T95, and this life span is the measured life span. In order to shorten the life span test cycle, the device life span test is usually carried out at high brightness by accelerating device aging, and the life span at low brightness is obtained by fitting the decay fitting formula. For example, the life span at 1000nits is recorded as T95@1000nits, and the calculation formula is:

[0166]

[0167] Among them, T95 L The lifespan under low brightness, generally 1000nits, T95 H is the lifespan under high brightness, that is, the measured lifespan, L H is the maximum brightness that the device is accelerated to, L L Generally, it is 1000nits, A is the acceleration factor, which is 1.7. The constant current is 2mA.

[0168] The light-emitting layers of the optoelectronic device prepared in Example 1 and the optoelectronic device prepared in Comparative Example 1 were scanned using a scanning electron microscope (SEM). The SEM images obtained by scanning are as follows: Fig.10 and Fig.11 shown.

[0169] Table 1

[0170]

[0171] As shown in Table 1, compared with the optoelectronic device of Comparative Example 1, the optoelectronic devices of Examples 1 to 5 have higher EQE max and T95@1000nits are significantly improved compared with those of Comparative Example 1, indicating that the optoelectronic devices of Examples 1 to 7 have higher luminous efficiency and longer life than the optoelectronic device of Comparative Example 1.

[0172] Compared with the optoelectronic device of comparative example 1, the optoelectronic devices of examples 1 to 5 have higher luminous efficiency and longer life. The reason may be that the optoelectronic device of comparative example 1 does not prepare an interface modification layer between adjacent layers. In the absence of the assistance of the polyamide-amine-based hyperbranched polymer, the light-emitting layer, electron transport layer and other functional layers of comparative example 1 produce strain cracks after stretching. In the subsequent device operation, these cracks will serve as current leakage paths, resulting in serious leakage current in the device and generating a large amount of Joule heat, causing the device to age and degrade rapidly, and the performance is seriously degraded. The optoelectronic device of Example 1 has a first interface modification layer prepared between the electron transport layer and the light-emitting layer, the optoelectronic device of Example 2 has a first interface modification layer prepared between the light-emitting layer and the hole injection layer, the optoelectronic device of Example 3 has a first interface modification layer prepared between the electron transport layer and the light-emitting layer and a first interface modification layer prepared between the light-emitting layer and the hole injection layer, the optoelectronic device of Example 4 has a second interface modification layer prepared between the anode and the hole injection layer and a first interface modification layer prepared between the electron transport layer and the light-emitting layer, the optoelectronic device of Example 5 has a third interface modification layer prepared between the cathode and the electron transport layer and a first interface modification layer prepared between the electron transport layer and the light-emitting layer, and the materials of each interface modification layer include polyamide-amine based hyperbranched polymers, polyamide-amine based hyperbranched polymers The -NH2 end groups, carboxyl groups and other strong polar groups in the polymer can combine with the dangling bonds, surface defects, surface ligands and the like on the surface of the functional layer by forming high-density hydrogen bonds or dipole effects, so they have strong adhesion at the interface between adjacent layers. The high flexibility of the polyamidoamine side chains helps to reorganize the hydrogen bond donors and acceptors, creating an adaptive dynamic hydrogen bond network. At the same time, the intramolecular cavity of the polyamidoamine hyperbranched polymer can undergo structural reconstruction and absorb deformation energy during the bending process. These unique properties enable the polyamidoamine hyperbranched polymer to effectively absorb and reduce deformation energy, thereby improving the mechanical strength and toughness of the interface between adjacent layers, reducing or even avoiding cracks in the wrinkled structure of each layer, reducing leakage current, and thereby improving the luminous efficiency and life of the optoelectronic device.

[0173] from Fig.10 and Fig.11 It can be seen that Example 1 has no cracks, while Comparative Example 1 has obvious cracks. The reason may be that the optoelectronic device of Example 1 has a first interface modification layer prepared between the electron transport layer and the light-emitting layer, and the material of the first interface modification layer includes a polyamide-amine-based hyperbranched polymer. The polyamide-amine-based hyperbranched polymer can effectively absorb and reduce deformation energy, thereby improving the mechanical strength and toughness of the interface between the electron transport layer and the light-emitting layer, reducing or even avoiding cracks in the light-emitting layer. The optoelectronic device of Comparative Example 1 does not have an interface modification layer prepared between the light-emitting layer and the electron transport layer. In the absence of the assistance of the polyamide-amine-based hyperbranched polymer, the light-emitting layer of Comparative Example 1 produces strain cracks after stretching.

[0174] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0175] The optoelectronic devices and their preparation methods, and display devices provided in the embodiments of the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the methods and core ideas of the present application. At the same time, for technical personnel in this field, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A photoelectric device, characterized in that: It comprises a first electrode, a functional layer and a second electrode which are stacked, wherein the functional layer comprises multiple sub-functional layers, a first interface modification layer is arranged between at least two adjacent sub-functional layers, and the material of the first interface modification layer comprises a hyperbranched polymer.

2. The optoelectronic device according to claim 1, characterized in that: The first interface modification layer forms a wrinkled structure; And / or, a second interface modification layer is provided between the first electrode and the functional layer, the material of the second interface modification layer comprises a hyperbranched polymer, and the second interface modification layer forms a corrugated structure; And / or, a third interface modification layer is disposed between the functional layer and the second electrode, the material of the third interface modification layer includes a hyperbranched polymer, and the third interface modification layer forms a corrugated structure.

3. The optoelectronic device according to claim 2, characterized in that: The height difference between a protrusion and an adjacent groove in the pleated structure is 5nm to 300nm, the distance between two adjacent protrusions in the pleated structure is 50nm to 2000nm, and the distance between two adjacent grooves in the pleated structure is 50nm to 2000nm.

4. The optoelectronic device according to claim 1 or 2, characterized in that: The hyperbranched polymer is a polyamidoamine-based hyperbranched polymer, which is synthesized by an addition reaction of a first monomer and a second monomer, wherein the molar ratio of the first monomer to the second monomer is 1:2 to 2:1; The structural formula of the first monomer is: The structural formula of the second monomer is: The brackets [] represent repeating units, and n is 2 to 30.

5. The optoelectronic device according to claim 4, characterized in that: The structural formula of the polyamidoamine hyperbranched polymer is: The brackets [] represent repeating units, and the number of each repeating unit independently ranges from 2 to 30.

6. The optoelectronic device according to claim 1 or 2, characterized in that: The sub-functional layer comprises a light-emitting layer and an electronic functional layer, wherein the electronic functional layer is arranged between the light-emitting layer and the first electrode or between the light-emitting layer and the second electrode, and the first interface modification layer is arranged between the light-emitting layer and the electronic functional layer; Alternatively, the sub-functional layer includes a light-emitting layer and a hole functional layer, the hole functional layer is arranged between the light-emitting layer and the first electrode or between the light-emitting layer and the second electrode, and the first interface modification layer is arranged between the light-emitting layer and the hole functional layer; Alternatively, the sub-functional layer includes a light-emitting layer, an electronic functional layer and a hole functional layer, one of the electronic functional layer and the hole functional layer is arranged between the light-emitting layer and the first electrode and the other is arranged between the light-emitting layer and the second electrode, and the first interface modification layer is arranged between the light-emitting layer and the electronic functional layer and / or between the light-emitting layer and the hole functional layer.

7. The optoelectronic device according to claim 6, characterized in that: The electronic functional layer includes an electron transport layer and / or an electron injection layer; When the electronic functional layer includes the electron transport layer and the electron injection layer, the electron injection layer is arranged between the first electrode and the light-emitting layer or between the second electrode and the light-emitting layer, and the electron transport layer is arranged between the light-emitting layer and the electron injection layer.

8. The optoelectronic device according to claim 7, characterized in that: When the electronic functional layer includes the electron transport layer and the electron injection layer, the first interface modification layer is disposed between the electron transport layer and the electron injection layer; And / or, the material of the electron transport layer is selected from one or more of inorganic electron transport materials and organic electron transport materials, and the inorganic electron transport material is selected from one or more of metal oxides, doped metal oxides, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials. Specifically, the metal oxide is selected from one or more of ZnO, TiO2, SnO2, Al2O3, Ga2O3, V2O5, V3O8, CrO3, WO3, Fe2O3, Fe3O4, CuO, MoO2, Nb2O5, BaO, MoO3, CdO, BaO, Ta2O5, BaTiO3 and PbCrO4; the metal oxide in the doped metal oxide includes ZnO, TiO2, SnO2, Al2O3, Ga2O3, V2O5, V3O8, CrO3, WO3, Fe2O3, Fe3O4, CuO, MoO2, Nb2O5, BaO, MoO3, CdO, BaO, Ta2O5 , BaTiO3 and PbCrO4, the doping elements include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga and Sn; the IIB-VIA semiconductor materials include one or more of ZnS, ZnSe and CdS; the IIIB-VA semiconductor materials include one or more of InP and GaP; the IB-IIIB-VIA semiconductor materials include one or more of CuInS and CuGaS; the organic electron transport material includes one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene compounds and hydroxyquinoline compounds; And / or, the material of the electron injection layer is selected from one or more of LiF, MgP, MgF2, Al2O3, Ga2O3, ZnO, Cs2CO3, RbBr, Rb2CO3 and LiF / Yb.

9. The optoelectronic device according to claim 6, characterized in that: The hole functional layer includes a hole transport layer and / or a hole injection layer; When the hole functional layer includes the hole transport layer and the hole injection layer, the hole injection layer is arranged between the first electrode and the light-emitting layer or between the second electrode and the light-emitting layer, and the hole transport layer is arranged between the light-emitting layer and the hole injection layer.

10. The optoelectronic device according to claim 9, characterized in that: When the hole functional layer includes the hole transport layer and the hole injection layer, the first interface modification layer is disposed between the hole transport layer and the hole injection layer; And / or, the material of the hole transport layer is selected from 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro , N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiro NPB, poly (phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4' - one or more of bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped P-type gallium nitride, doped or undoped CrO3 and doped or undoped CuO; And / or, the material of the hole injection layer is selected from one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO3 derivatives, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide.

11. The optoelectronic device according to claim 6, characterized in that: The thickness of the first interface modification layer is 1 nm to 50 nm; And / or, the thickness of the second interface modification layer is 1 nm to 50 nm; And / or, the thickness of the third interface modification layer is 1 nm to 50 nm; And / or, the first electrode and the second electrode are independently selected from a metal electrode, a carbon electrode and a composite electrode formed by one or more of a doped or undoped metal oxide electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca and Mg; the material of the carbon electrode is selected from at least one of graphite, carbon nanotubes, graphene and carbon fiber; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO; the material of the composite electrode is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2; And / or, the material of the light-emitting layer is a quantum dot material, an organic light-emitting material or a perovskite material, wherein the quantum dot material is selected from at least one of a single structure quantum dot and a core-shell structure quantum dot, the single structure quantum dot is selected from at least one of a II-VI group compound, a III-V group compound and a I-III-VI group compound, the II-VI group compound is selected from at least one of CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS, CdZnSeS, CdZnSeTe and CdZnSTe, The III-V group compound is selected from at least one of InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP and InAlNP, and the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 and AgInS2; the core of the core-shell structure quantum dot is selected from any one of the above-mentioned single structure quantum dots, and the shell layer of the core-shell structure quantum dot includes one or more layers, wherein any shell layer material of the core-shell structure quantum dot is selected from at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS and ZnS.

12. A method for preparing a photoelectric device, characterized in that: The steps include: forming a first electrode on the pre-stretched elastic substrate; forming a functional layer including multiple sub-functional layers on the first electrode and forming a first interface modification layer between at least two adjacent sub-functional layers, wherein the material of the first interface modification layer includes a hyperbranched polymer; forming a second electrode on the functional layer; The elastic substrate is restored from a stretched state to an initial state, so that the first electrode, the functional layer, the first interface modification layer and the second electrode form a wrinkled structure to obtain a photoelectric device.

13. The preparation method according to claim 12, characterized in that: The sub-functional layer includes a light-emitting layer and an electronic functional layer, and the steps of forming a functional layer including multiple sub-functional layers on the first electrode and forming a first interface modification layer between at least two adjacent sub-functional layers include: forming a stacked light-emitting layer, a first interface modification layer, and an electronic functional layer on the first electrode in sequence, or forming a stacked electronic functional layer, a first interface modification layer, and a light-emitting layer on the first electrode in sequence; Alternatively, the sub-functional layer includes a light-emitting layer and a hole functional layer, and the steps of forming a functional layer including multiple sub-functional layers on the first electrode and forming a first interface modification layer between at least two adjacent sub-functional layers include: forming a stacked hole function layer, a first interface modification layer and a light-emitting layer in sequence on the first electrode, or forming a stacked light-emitting layer, a first interface modification layer and a hole function layer in sequence on the first electrode; Alternatively, the sub-functional layer includes a light-emitting layer, an electron functional layer and a hole functional layer, and the steps of forming a functional layer including multiple sub-functional layers on the first electrode and forming a first interface modification layer between at least two adjacent sub-functional layers include: A stacked hole functional layer, a light-emitting layer, a first interface modification layer and an electronic functional layer are formed in sequence on the first electrode, or a stacked hole functional layer, a first interface modification layer, a light-emitting layer and an electronic functional layer are formed in sequence on the first electrode, or a stacked hole functional layer, a first interface modification layer, a light-emitting layer, a first interface modification layer and an electronic functional layer are formed in sequence on the first electrode, or a stacked electronic functional layer, a first interface modification layer, a light-emitting layer and a hole functional layer are formed in sequence on the first electrode, or a stacked electronic functional layer, a first interface modification layer, a light-emitting layer, a first interface modification layer and a hole functional layer are formed in sequence on the first electrode, or a stacked electronic functional layer, a first interface modification layer, a light-emitting layer, a first interface modification layer and a hole functional layer are formed in sequence on the first electrode.

14. The preparation method according to claim 12, characterized in that: The step of forming a first interface modification layer between at least two adjacent sub-functional layers comprises: Disposing a hyperbranched polymer on one of the two adjacent sub-functional layers to form a first interface modification layer, and then forming another sub-functional layer on the first interface modification layer; and / or The step of forming a functional layer including multiple sub-functional layers on the first electrode comprises: arranging a hyperbranched polymer on the first electrode to form a second interface modification layer, and forming the functional layer on the second interface modification layer; And / or, the step of forming the second electrode on the functional layer includes: arranging a hyperbranched polymer on the functional layer to form a third interface modification layer, and forming the second electrode on the third interface modification layer.

15. The preparation method according to any one of claims 12 to 14, characterized in that: The hyperbranched polymer is a polyamidoamine-based hyperbranched polymer, which is synthesized by an addition reaction of a first monomer and a second monomer, wherein the first monomer is N,N'-methylenebisacrylamide, the second monomer is a C2-C30 alkyl diamine, and the ratio of the first monomer to the second monomer is 1:2 to 2:1; And / or, the elastic substrate is made of PDMS, PS, PI, PDMS, PMMA, ABSEP, PE, PC, PF, PEN, PVP, PPX or PLA; and / or, a ratio of an area of ​​the elastic substrate in a stretched state to an area of ​​the elastic substrate in an initial state is 1.2 to 1.3; And / or, after the step of restoring the elastic substrate from the stretched state to the initial state, the method further comprises: maintaining the elastic substrate at a preset temperature for a preset time, wherein the preset temperature is 60° C. to 150° C. and the preset time is 1 min to 60 min.

16. A display device, characterized in that: The display device comprises the optoelectronic device according to any one of claims 1 to 11, or the display device comprises the optoelectronic device prepared by the preparation method according to any one of claims 12 to 15.

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