Light-emitting substrate, display device and preparation method

Abstract

The invention discloses a light-emitting substrate, a display device and a preparation method, the light-emitting substrate comprises a light-emitting diode layer, a bonding layer and a quantum dot color conversion substrate which are arranged in sequence, and the quantum dot color conversion substrate and the light-emitting diode layer are fixed through the bonding layer; the side wall of the light-emitting diode layer is coated with a light reflecting layer so as to reflect light rays emitted by the light-emitting diode layer and leaked from the side face. The invention provides the light-emitting substrate with high display quality, the display device and the preparation method.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a light-emitting substrate, a display device and a preparation method thereof. Background Art

[0002] With the development of display panels, the requirements for ultra-high-definition display quality are also higher. Since quantum dot (QD) technology has high-quality characteristics of pure color, wider color gamut, wide viewing angle, ultra-high contrast, and fast response speed, display devices based on color conversion layers are currently one of the main paths to achieve ultra-high-definition display technology.

[0003] However, due to the large difference in refractive index between the LED layer and the bonding adhesive, a waveguide effect is produced, causing serious light leakage from the side, affecting color deviation and reducing light efficiency, and an improved solution is urgently needed. Summary of the invention

[0004] In view of the above problems, the present invention is proposed to provide a light-emitting substrate, a display device and a manufacturing method that overcome the above problems or at least partially solve the above problems.

[0005] In a first aspect, a light-emitting substrate is provided, comprising:

[0006] A light-emitting diode layer, a bonding layer and a quantum dot color conversion substrate are sequentially arranged, wherein the quantum dot color conversion substrate and the light-emitting diode layer are fixed via the bonding layer;

[0007] The side wall of the light emitting diode layer is coated with a reflective layer to reflect the light emitted by the light emitting diode layer from leaking from the side.

[0008] Optionally, the light-emitting diode layer, the bonding layer and the side walls of the quantum dot color conversion substrate are all coated with a reflective layer.

[0009] Optionally, a reflective layer is provided on the back side of the light-emitting diode layer, the reflective layer is electrically isolated from the electrodes of the light-emitting diode layer, and the back side is the surface away from the bonding layer.

[0010] Optionally, the reflective layer is a metal layer or an alloy layer.

[0011] Optionally, the light-emitting diode layer includes light-emitting diodes arranged at intervals, and the light-emitting diodes include an electrode layer, a P-type layer, a quantum well layer and an N-type layer arranged in sequence in a direction close to the bonding layer; the quantum dot color-conversion substrate includes an encapsulation layer, a quantum dot film layer, a color film layer and a transparent substrate arranged in sequence in a direction away from the bonding layer.

[0012] In a second aspect, a method for preparing a light-emitting substrate is provided, comprising:

[0013] preparing a light-emitting diode layer and a quantum dot color conversion substrate;

[0014] The light-emitting diode layer and the quantum dot color conversion substrate are fixedly connected by a bonding layer; wherein the side wall of the light-emitting diode layer is coated with a reflective layer to reflect the light emitted by the light-emitting diode layer from the side leakage.

[0015] Optionally, after the light-emitting diode layer and the quantum dot color conversion substrate are fixedly connected through the bonding layer, it also includes: forming a sacrificial structure on the back side of the light-emitting diode layer, the sacrificial structure covering the electrode of the light-emitting diode layer, the back side being the surface away from the bonding layer; forming a covering reflective layer on the side wall and the back side of the light-emitting diode layer; removing the sacrificial structure to electrically isolate the reflective layer from the electrode of the light-emitting diode layer.

[0016] Optionally, the preparation of the light-emitting diode layer includes: preparing light-emitting diodes arranged at intervals on a substrate, the light-emitting diodes including a P-type layer, a quantum well layer and an N-type layer arranged in sequence; forming a sacrificial structure on the back side of the light-emitting diode layer, the sacrificial structure surrounding a preset electrode region of the light-emitting diode layer, the back side being a surface away from the substrate; forming a coated reflective layer and an electrode on the side wall and the back side of the light-emitting diode layer; and removing the sacrificial structure to electrically isolate the reflective layer from the electrode of the light-emitting diode layer.

[0017] Optionally, the material of the sacrificial structure is an organic topological material, and the material of the sacrificial structure does not form a film with the material of the reflective layer.

[0018] In a third aspect, a display device is provided, comprising: a light-emitting substrate as described in any one of the first aspects, wherein the display device is a display panel or a display device.

[0019] The technical solution provided in the embodiments of the present invention has at least the following technical effects or advantages:

[0020] The light-emitting substrate, display device and preparation method provided by the embodiment of the present invention can reflect the light emitted by the light-emitting diode layer from the side leakage by arranging the side wall of the light-emitting diode layer to reflect the leakage light back into the light-emitting substrate and output it from the light-emitting side, thereby increasing the light output and ensuring the display quality.

[0021] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention, it can be implemented according to the contents of the specification. In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present invention. Moreover, the same reference symbols are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

[0023] Figure 1 Schematic diagram of light leakage from the side of the light-emitting substrate in an embodiment of the present invention Figure 1 ;

[0024] Figure 2 The structure of the light-emitting substrate in the embodiment of the present invention is shown in FIG. Figure 1 ;

[0025] Figure 3 The structure of the light-emitting substrate in the embodiment of the present invention is shown in FIG. Figure 2 ;

[0026] Figure 4 The structure of the light-emitting substrate in the embodiment of the present invention is shown in FIG. Figure 3 ;

[0027] Figure 5 The structure of the light-emitting substrate in the embodiment of the present invention is shown in FIG. Figure 4 ;

[0028] Figure 6 is a schematic flow chart of a method for preparing a light-emitting substrate in an embodiment of the present invention;

[0029] Figure 7 Schematic diagram of the process of preparing the light-emitting substrate in the embodiment of the present invention Figure 1 ;

[0030] Figure 8 Schematic diagram of the process of preparing the light-emitting substrate in the embodiment of the present invention Figure 2 ;

[0031] Fig. 9 Schematic diagram of the process of preparing the light-emitting substrate in the embodiment of the present invention Figure 3 ;

[0032] Fig.10 Schematic diagram of the process of preparing the light-emitting substrate in the embodiment of the present invention Figure 4 ;

[0033] Fig.11 Schematic diagram of the process of preparing the light-emitting substrate in the embodiment of the present invention Figure 5 ;

[0034] Fig.12 Schematic diagram of the process of preparing the light-emitting substrate in the embodiment of the present invention Figure 6 ;

[0035] Fig.13 Schematic diagram of the process of preparing the light-emitting substrate in the embodiment of the present invention Figure 7 ;

[0036] Fig.14 Schematic diagram of the process of preparing the light-emitting substrate in the embodiment of the present invention Figure 8 ;

[0037] Fig.15 Schematic diagram of the process of preparing the light-emitting substrate in the embodiment of the present invention Figure 9 ;

[0038] Fig.16 Schematic diagram of the process of preparing the light-emitting substrate in the embodiment of the present invention Figure 10 ;

[0039] Fig.17 Schematic diagram of the process of preparing the light-emitting substrate in the embodiment of the present invention Figure 10 one;

[0040] Fig.18 Schematic diagram of the process of preparing the light-emitting substrate in the embodiment of the present invention Figure 10 two;

[0041] Fig.19 Schematic diagram of the process of preparing the light-emitting substrate in the embodiment of the present invention Figure 10 three;

[0042] Fig. 20 Schematic diagram of the process of preparing the light-emitting substrate in the embodiment of the present invention Figure 10 Four;

[0043] Fig.21 Schematic diagram of the process of preparing the light-emitting substrate in the embodiment of the present invention Figure 10 five;

[0044] Fig. 22 Schematic diagram of the process of preparing the light-emitting substrate in the embodiment of the present invention Figure 10 six;

[0045] Fig.23 Schematic diagram of the process of preparing the light-emitting substrate in the embodiment of the present invention Figure 10 seven;

[0046] Fig.24 Schematic diagram of the process of preparing the light-emitting substrate in the embodiment of the present invention Figure 10 eight;

[0047] Fig.25 Schematic diagram of the process of preparing the light-emitting substrate in the embodiment of the present invention Figure 10 Nine;

[0048] Fig.26FIG. 4 is a schematic diagram of the structure of a display device in an embodiment of the present invention. DETAILED DESCRIPTION

[0049] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings.

[0050] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. These figures are not drawn to scale, and some details are magnified and some details may be omitted for the purpose of clear expression. The shapes of various regions and layers shown in the figures and the relative sizes and positional relationships therebetween are only exemplary, and may deviate in practice due to manufacturing tolerances or technical limitations, and those skilled in the art may further design regions / layers with different shapes, sizes, and relative positions according to actual needs.

[0051] In the context of the present disclosure, when a layer / element is referred to as being "on" another layer / element, the layer / element may be directly on the other layer / element, or there may be an intervening layer / element therebetween. Additionally, if a layer / element is "on" another layer / element in one orientation, the layer / element may be "below" the other layer / element when the orientation is reversed. In the context of the present disclosure, similar or identical components may be denoted by the same or similar reference numerals.

[0052] In order to better understand the above-mentioned technical scheme, the above-mentioned technical scheme will be described in detail below in combination with specific implementation methods. It should be understood that the embodiments of the present disclosure and the specific features in the embodiments are detailed descriptions of the technical scheme of the present application, rather than limitations on the technical scheme of the present application. In the absence of conflict, the embodiments of the present application and the technical features in the embodiments can be combined with each other.

[0053] Please refer to Figure 1 The use of a color conversion layer in the light-emitting substrate can significantly improve the display effect, but the diode device material of the light-emitting diode layer 1 is often made of inorganic materials such as GaN and AlN, and the bonding layer 2 connected to the quantum dot color conversion substrate 3 is a bonding adhesive material. There is a large refractive index difference between the bonding adhesive material and the diode device material, which produces a waveguide effect, causing the light (dashed line) to reflect back and forth between the material interfaces, resulting in serious light leakage on the side of the light-emitting substrate, and then there is strong light leakage around the light-emitting area, resulting in abnormal device display.

[0054] The present invention provides a light-emitting substrate, such as Figure 2 As shown, it includes: a light emitting diode layer 1, a bonding layer 2 and a quantum dot color conversion substrate 3 arranged in sequence, and the quantum dot color conversion substrate 3 is fixed to the light emitting diode layer 1 through the bonding layer 2. The side wall of the light emitting diode layer 1 is coated with a reflective layer 4 to reflect the light emitted by the light emitting diode layer 1 from the side leakage.

[0055] It should be noted that the light-emitting substrate provided in the present application can be applied to liquid crystal display panels (Liquid Crystal Display, LCD), organic light-emitting semiconductor display panels (Organic Electroluminescence Display, OLED), light-emitting diode display panels (Lighting Emitting Diode, LED), etc., and can also be used as an independent light-emitting device. There is no limitation here and they will not be listed one by one.

[0056] In an alternative embodiment, it is possible to Figure 2 As shown, the reflective layer 4 can only cover the side wall of the LED layer 1 to reflect the leaked light from the side of the LED layer 1 back into the light-emitting substrate and output it from the light-emitting side, thereby increasing the light output and ensuring the display quality.

[0057] You can also Figure 3 As shown, the reflective layer 4 covers the side walls of the light-emitting diode layer 1, the bonding layer 2 and the quantum dot color conversion substrate 3, so as to reflect the light leakage from the side of the light-emitting substrate to a greater extent, and also protect the cutting path defects around the substrate from further damage. Of course, the reflective layer 4 can also only cover the side walls of the light-emitting diode layer 1 and the bonding layer 2, which is not limited here.

[0058] You can also Figure 4 As shown, a reflective layer 4 is also provided on the back side of the LED layer 1 (the side away from the bonding layer 2), and the reflective layer 4 is electrically isolated from the electrodes of the LED layer 1 to avoid affecting the function of the LED.

[0059] In an optional embodiment, the reflective layer 4 may be a metal layer or an alloy layer, and may be prepared by evaporation or by deposition and then etching, which is not limited here.

[0060] Specifically, if Figure 5 As shown, the light-emitting diode layer 1 may include light-emitting diodes arranged at intervals, each of which includes an electrode layer 11, a P-type layer 12, a quantum well layer 13 and an N-type layer 14 arranged in sequence in a direction close to the bonding layer 2 (the positions of the P-type layer 12 and the N-type layer 14 may be interchanged). Figure 6 As shown, the P-type layer 12 can be set separately for each light-emitting diode, and the N-type layer 14 can be a common layer. The P-type layer 12 and the N-type semiconductor layer 14 serve as the positive and negative electrodes of the light-emitting diode respectively, and are both connected to the electrode layer 11 through the conductor material. When the P-type layer 12 and the N-type layer 14 are powered on, the quantum well layer 13 therein emits light.

[0061] like Figure 5As shown, the quantum dot color conversion substrate 3 includes an encapsulation layer 31, a quantum dot film layer 32, a color filter layer 33 and a transparent substrate 34 which are sequentially arranged in a direction extending away from the bonding layer 2. The encapsulation layer 31 is an inorganic material to protect the quantum dot film layer 32. The quantum dot film layer 32 is provided with a quantum dot material area ( Figure 5 The color filter layer 33 has a black matrix, and the color filter area ( Figure 5 The color film area and the quantum dot material area are overlapped to output light of different colors. The transparent substrate 34 can be a glass substrate or a substrate of other transparent materials.

[0062] The light-emitting diode layer 1 and the quantum dot color conversion substrate 3 are connected via a bonding layer 2. The specific bonding layer 2 may be a bonding adhesive layer or a metal bonding layer, which is not limited here.

[0063] Based on the same inventive concept, the present invention also provides a method for preparing the aforementioned light-emitting substrate. Figure 6 As shown, including:

[0064] Step S601, preparing a light-emitting diode layer and a quantum dot color conversion substrate;

[0065] Step S602, the light emitting diode layer and the quantum dot color conversion substrate are fixedly connected via a bonding layer; wherein the side wall of the light emitting diode layer is coated with a reflective layer to reflect the light emitted by the light emitting diode layer from the side leakage.

[0066] Combine the following Figures 7 to 25 The preparation method of the light-emitting substrate is introduced in detail.

[0067] There are many preparation methods according to the preparation process and position of the reflective layer 4. Two methods are listed below as examples:

[0068] The first method is to prepare the reflective layer 4 after the light emitting diode layer 1 and the quantum dot color conversion substrate 3 are bonded.

[0069] First, a method for preparing the light emitting diode layer 1 is introduced.

[0070] First Figure 7 As shown, an epitaxial layer is provided or prepared, that is, after surface treatment of a substrate 801 (the substrate 801 can be a sapphire substrate, a silicon substrate or a SiC substrate, etc.), an N-type material layer 802 (whose material can be an inorganic material or a semiconductor material such as GaN or AlN), a quantum well material layer 803 and a P-type material layer 804 (whose material can be an inorganic material or a semiconductor material such as GaN or AlN) are sequentially deposited thereon, and the deposition order of the N-type material layer 802 and the P-type material layer 804 can be interchanged.

[0071] For example Figure 8 As shown, the epitaxial layer is patterned to form light-emitting diodes arranged at intervals, and then metal materials are deposited to form positive and negative electrodes of the light-emitting diodes, and insulating materials are deposited to isolate and protect each light-emitting diode. Each light-emitting diode includes an electrode layer 11, a P-type layer 12, a quantum well layer 13 and an N-type layer 14 arranged in sequence (the positions of the P-type layer 12 and the N-type layer 14 can be interchanged). The P-type layer 12 can be set separately for each light-emitting diode, and the N-type layer 14 can be a common layer. The P-type layer 12 and the N-type semiconductor layer 14 serve as the positive and negative electrodes of the light-emitting diode, respectively, and are both connected to the electrode layer 11 through metal materials. When the P-type layer 12 and the N-type layer 14 are powered on through the electrode layer 11, the quantum well layer 13 emits light.

[0072] For example Fig. 9 As shown, a temporary substrate 1001 (temporary substrate 10011 can be made of sapphire, glass, etc.) is used. Figure 8 The patterned epitaxial layer shown is temporarily bonded. The bonding method may be bonding glue (for example, a temporary bonding glue material that can be laser-dissociated or thermally-dissociated to facilitate subsequent separation) or metal bonding.

[0073] For example Fig.10 As shown, the original substrate 801 is removed. The specific removal method may be laser stripping or acid etching removal, etc., which is not limited here.

[0074] Next, a method for preparing the quantum dot color conversion substrate 3 is introduced.

[0075] First Fig.11 As shown, a black opaque material 1201 is coated on a transparent substrate 34 (which may be a glass substrate or a substrate of other transparent materials), and then a black matrix is ​​prepared through exposure, development and etching processes, and a color film 1202 is prepared in the gaps of the black matrix to form a color film layer 33.

[0076] Then, if Fig.12 As shown, a dike structure 1301 is prepared on the color film layer 33 by coating, exposure, development and etching processes, and a quantum dot material area (dot filling area) is prepared in the gap of the dike structure 1301 by inkjet printing and other processes to form a quantum dot film layer 32.

[0077] For example Fig.13 As shown, an encapsulation layer 31 is formed on the quantum dot film layer 32 by atomic layer deposition (ALD) or chemical vapor deposition (CVD). The encapsulation layer 31 can be prepared by a single layer or multiple layers of inorganic materials.

[0078] After the light emitting diode layer 1 and the quantum dot color conversion substrate 3 are prepared, Fig.14 As shown, a bonding layer 2 is formed by bonding adhesive or metal bonding to perform permanent bonding of the light-emitting diode layer 1 and the quantum dot color conversion substrate 3 .

[0079] After bonding is completed, Fig.15 As shown, the temporary substrate 1001 is removed, and the temporary bonding layer between the temporary substrate 1001 and the patterned epitaxial layer is removed by cleaning and ashing processes. The temporary substrate 1001 can be removed by laser stripping or acid etching, etc., which is not limited here.

[0080] Then, if Fig.16 As shown, a sacrificial structure 5 is formed on the back side of the light emitting diode layer 1 (the side away from the bonding layer 2), and the sacrificial structure 5 covers the electrode of the light emitting diode layer 1. The sacrificial structure 5 can be formed by evaporation using a high-precision alignment mask.

[0081] For example Fig.17 As shown, a reflective layer 4 is formed on the side wall and the back of the light-emitting diode layer 1. Specifically, an open mask can be used to evaporate metal to form the reflective layer 4 (for example, Ag). The reflective layer 4 will cover the area other than the side wall and the surface electrode of the light-emitting diode layer 1, and can play the role of encapsulating pixels and quantum dot materials, so the thickness of the encapsulation layer 31 used for encapsulating the quantum dot film layer 32 can be thinned or eliminated.

[0082] In an optional embodiment, the material of the sacrificial structure 5 may be an organic topological material, and the material of the sacrificial structure 5 does not form a film with the material of the reflective layer 4. For example, the electrode patterning material CPM, or a material with low surface energy such as DDBFT, CBP, PFTC, etc. may be used to prepare the sacrificial structure 5. Because metal materials do not form a film on organic topological materials, when the reflective layer 4 is formed, no metal film will be formed on the sacrificial structure 5, so that the electrical isolation between the reflective layer 4 and the electrode can be ensured, and there is no need to perform etching processes on the reflective layer 4, which can avoid damage defects introduced by the etching process, and further ensure reliability.

[0083] After forming the reflective layer 4, Fig.18 As shown, the sacrificial structure 5 is removed to electrically isolate the reflective layer 4 from the electrodes of the light emitting diode layer 1. The specific removal process may be ashing, etching or polishing, etc., which is not limited here.

[0084] The second method is to prepare the reflective layer 4 before bonding the light-emitting diode layer 1 and the quantum dot color conversion substrate 3 .

[0085] First, a method for preparing the light emitting diode layer 1 is introduced.

[0086] Likewise Figure 7 As shown, an epitaxial layer is provided or prepared. Fig.19As shown, the epitaxial layer is patterned to form light-emitting diodes arranged at intervals, and each light-emitting diode includes an electrode layer 11, a P-type layer 12, a quantum well layer 13 and an N-type layer 14 arranged in sequence (the positions of the P-type layer 12 and the N-type layer 14 can be interchanged). The P-type layer 12 can be set separately for each light-emitting diode, and the N-type layer 14 can be a common layer. The P-type layer 12 and the N-type semiconductor layer 14 serve as the positive and negative electrodes of the light-emitting diode respectively. Fig. 20 As shown, a passivation layer material 2101 is deposited, and an opening is etched to form a through hole 2102 connected to the N-type layer 14 .

[0087] For example Fig.21 As shown, a sacrificial structure 5 is formed on the back side of the light-emitting diode layer 1 (the side away from the substrate 801), and the sacrificial structure 5 surrounds the preset electrode area of ​​the light-emitting diode layer 1. The sacrificial structure 5 can be formed by evaporation using a high-precision alignment mask. The sacrificial structure 5 does not cover the preset electrode area, but only surrounds the preset electrode area, so as to facilitate the subsequent electrical isolation of the electrode and the reflective layer 4.

[0088] For example Fig. 22 As shown, a reflective layer 4 and electrodes are formed on the side walls and back of the light-emitting diode layer 1 (the through hole 2102 is filled to form an electrode that conducts to the N-type layer 14, and a corresponding electrode is formed on the surface of the P-type layer 12). Because the electrode and the reflective layer 4 are both made of metal materials, they can be prepared in the same process to simplify the process flow. The reflective layer 4 will cover the area other than the side walls and surface electrodes of the light-emitting diode layer 1, and can play a role in encapsulating pixels and quantum dot materials. Therefore, the thickness of the encapsulation layer 31 used for encapsulating the quantum dot film layer 32 can be thinned or eliminated. And by subsequently removing the sacrificial structure 5, the reflective layer 4 can be electrically isolated from the electrode of the light-emitting diode layer 1.

[0089] In an optional embodiment, the material of the sacrificial structure 5 may be an organic topological material, and the material of the sacrificial structure 5 does not form a film with the material of the reflective layer 4. For example, the electrode patterning material CPM, or a material with low surface energy such as DDBFT, CBP, PFTC, etc. may be used to prepare the sacrificial structure 5. Because metal materials do not form a film on organic topological materials, when the reflective layer 4 is formed, no metal film will be formed on the sacrificial structure 5, so that the electrical isolation between the reflective layer 4 and the electrode can be ensured, and there is no need to perform etching processes on the reflective layer 4, which can avoid damage defects introduced by the etching process, and further ensure reliability.

[0090] For example Fig.23 As shown, a temporary substrate 1001 (temporary substrate 10011 can be made of sapphire, glass, etc.) is used. Fig. 22The patterned epitaxial layer shown is temporarily bonded. The bonding method may be bonding glue (for example, a temporary bonding glue material that can be laser-dissociated or thermally-dissociated to facilitate subsequent separation) or metal bonding.

[0091] The preparation method of the quantum dot color conversion substrate 3 is the same as the first method described above, and will not be described again here.

[0092] Then, after the light emitting diode layer 1 and the quantum dot color conversion substrate 3 are prepared, Fig.24 As shown, a bonding layer 2 is formed by bonding adhesive or metal bonding to perform permanent bonding of the light-emitting diode layer 1 and the quantum dot color conversion substrate 3 .

[0093] After bonding is completed, Fig.25 As shown, the temporary substrate 1001 is removed, and the temporary bonding layer between the temporary substrate 1001 and the patterned epitaxial layer is removed by cleaning and ashing processes. The temporary substrate 1001 can be removed by laser stripping or acid etching, etc., which is not limited here.

[0094] Of course, the preparation method of the light-emitting substrate is not limited to the above two methods. Instead of using the sacrificial structure 5, the reflective layer 4 is formed and then the electrical isolation between the reflective layer 4 and the electrode is achieved through an etching process. This is not limited here and will not be listed one by one.

[0095] Since the preparation method of the light-emitting substrate introduced in the embodiment of the present invention is the preparation method corresponding to the light-emitting substrate introduced in the embodiment of the present invention, its specific implementation has been described in the process of introducing the light-emitting substrate, so based on the light-emitting substrate introduced in the embodiment of the present invention, the person skilled in the art can understand the specific implementation and variation of the preparation method of the light-emitting substrate, so it is not repeated here. All preparation methods corresponding to the light-emitting substrate of the embodiment of the present invention belong to the scope of protection of the present invention.

[0096] Based on the same inventive concept, an embodiment of the present invention further provides a display device, such as Fig.26 As shown, it includes: a light-emitting substrate 100 provided by an embodiment of the present invention, wherein the display device is a display panel or a display equipment.

[0097] The technical solution provided in the embodiments of the present invention has at least the following technical effects or advantages:

[0098] The light-emitting substrate, display device and preparation method provided by the present invention can reflect the light emitted by the light-emitting diode layer from the side leakage by arranging the side wall of the light-emitting diode layer to reflect the leakage light back into the light-emitting substrate and output it from the light-emitting side, thereby increasing the light output and ensuring the display quality.

[0099] In the description provided herein, a large number of specific details are described. However, it is understood that embodiments of the present invention can be practiced without these specific details. In some instances, well-known methods, structures and techniques are not shown in detail so as not to obscure the understanding of this description.

[0100] Similarly, it should be understood that in order to streamline the present disclosure and aid in understanding one or more of the various inventive aspects, in the above description of exemplary embodiments of the present invention, various features of the present invention are sometimes grouped together into a single embodiment, figure, or description thereof. However, this disclosed method should not be interpreted as reflecting the intention that the claimed invention requires more features than those explicitly recited in each claim. More specifically, as reflected in the claims below, inventive aspects lie in less than all the features of the individual embodiments disclosed above. Therefore, the claims that follow the specific embodiment are hereby expressly incorporated into the specific embodiment, with each claim itself serving as a separate embodiment of the present invention.

[0101] It should be noted that the above embodiments illustrate the present invention rather than limit it, and that those skilled in the art may devise alternative embodiments without departing from the scope of the appended claims. In the claims, any reference symbol between brackets shall not be construed as a limitation on the claims. The word "comprising" does not exclude the presence of components or steps not listed in the claims. The word "one" or "an" preceding a component does not exclude the presence of a plurality of such components. The present invention may be implemented by means of hardware comprising a number of different components and by means of a suitably programmed computer. In a unit claim enumerating a number of devices, several of these devices may be embodied by the same hardware item. The use of the words first, second, and third, etc., does not indicate any order. These words may be interpreted as names.

Claims

1. A light-emitting substrate, characterized in that: include: A light-emitting diode layer, a bonding layer and a quantum dot color conversion substrate are sequentially arranged, wherein the quantum dot color conversion substrate and the light-emitting diode layer are fixed via the bonding layer; The side wall of the light emitting diode layer is coated with a reflective layer to reflect the light emitted by the light emitting diode layer from leaking from the side.

2. The light-emitting substrate according to claim 1, wherein: The side walls of the light-emitting diode layer, the bonding layer and the quantum dot color conversion substrate are all covered with a reflective layer.

3. The light-emitting substrate according to claim 1, wherein: A reflective layer is disposed on the back side of the light emitting diode layer, the reflective layer is electrically isolated from the electrodes of the light emitting diode layer, and the back side is a surface away from the bonding layer.

4. The light-emitting substrate according to claim 1, wherein: The reflective layer is a metal layer or an alloy layer.

5. The light-emitting substrate according to claim 1, wherein: The light-emitting diode layer includes light-emitting diodes arranged at intervals, and the light-emitting diodes include an electrode layer, a P-type layer, a quantum well layer and an N-type layer arranged in sequence in a direction close to the bonding layer; The quantum dot color conversion substrate comprises a packaging layer, a quantum dot film layer, a color film layer and a transparent substrate which are sequentially arranged in a direction away from the bonding layer.

6. A method for preparing a light-emitting substrate, characterized in that: include: preparing a light-emitting diode layer and a quantum dot color conversion substrate; The light-emitting diode layer and the quantum dot color conversion substrate are fixedly connected by a bonding layer; wherein the side wall of the light-emitting diode layer is coated with a reflective layer to reflect the light emitted by the light-emitting diode layer from the side leakage.

7. The preparation method according to claim 6, characterized in that: After the light emitting diode layer and the quantum dot color conversion substrate are fixedly connected through the bonding layer, the method further includes: forming a sacrificial structure on the back side of the light emitting diode layer, wherein the sacrificial structure covers the electrode of the light emitting diode layer, and the back side is a surface away from the bonding layer; Forming a reflective layer covering the side wall and the back surface of the light emitting diode layer; The sacrificial structure is removed so that the light reflecting layer and the electrodes of the light emitting diode layer are electrically isolated.

8. The preparation method according to claim 6, characterized in that: The method for preparing the light emitting diode layer comprises: Prepare light-emitting diodes arranged at intervals on a substrate, wherein the light-emitting diodes include a P-type layer, a quantum well layer and an N-type layer arranged in sequence; forming a sacrificial structure on the back side of the light emitting diode layer, the sacrificial structure surrounding a preset electrode region of the light emitting diode layer, the back side being a surface away from the substrate; Forming a light-reflecting layer and an electrode on the side wall and the back of the light-emitting diode layer; The sacrificial structure is removed so that the light reflecting layer and the electrodes of the light emitting diode layer are electrically isolated.

9. The preparation method according to claim 7 or 8, characterized in that: The material of the sacrificial structure is an organic topological material, and the material of the sacrificial structure and the material of the light reflecting layer do not form a film.

10. A display device, comprising: The light-emitting substrate according to any one of claims 1 to 5, wherein the display device is a display panel or a display equipment.

Images