Radio frequency power synthesis device and application equipment thereof

Abstract

The embodiment of the invention provides a radio frequency power synthesis device and application equipment thereof, and relates to the technical field of semiconductors, and the radio frequency power synthesis device comprises a power synthesis module which is connected with power amplifier modules of a plurality of radio frequency power supplies and is used for receiving radio frequency power output by the power amplifier modules and synthesizing the radio frequency power into an input radio frequency signal; the impedance conversion module is connected with the output end of the power synthesis module and is used for performing impedance matching on the input radio frequency signal to generate an output radio frequency signal; the directional coupler is connected with the output end of the impedance conversion module and is used for carrying out signal acquisition on the output radio frequency signal and generating radio frequency information; the signal input end of the control module is connected with the output end of the directional coupler, the output end of the control module is connected with the power amplifier module, and the control module is used for controlling radio frequency power output of the power amplifier module based on the radio frequency information. According to the embodiment of the invention, on the basis of not changing the original radio frequency power supply structure, the multi-radio frequency power synthesis function is realized, and the power radio frequency output is adjusted.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a radio frequency power synthesis device, a radio frequency power synthesizer, a radio frequency power supply and a semiconductor process equipment. Background Art

[0002] RF power supply is a high-frequency AC power supply, usually operating between 2MHz (megahertz) and 60MHz. It is mainly used in semiconductor equipment such as RF sputtering coating, reactive ion etching, chemical vapor deposition, and medical equipment such as nuclear magnetic resonance imaging. Taking semiconductor process equipment as an example, with the rapid development of the semiconductor industry, more and more new processes are in urgent need of development. Correspondingly, there are more requirements for the core components of semiconductor equipment - RF power supply. On the original basis, greater RF output power, frequency selection function, high-accuracy low-power output function (High accuracy-Low output), etc. have become the development trend of RF power supply. However, when the existing RF power supply needs to achieve high-power output, it is necessary to make major changes to the original RF power supply structure, otherwise it is difficult to achieve power synthesis amplification. Summary of the invention

[0003] In view of the above problems, embodiments of the present invention are proposed to provide a radio frequency power synthesis device, a radio frequency power synthesizer, a radio frequency power supply and a semiconductor process equipment that overcome the above problems or at least partially solve the above problems.

[0004] In a first aspect of the present invention, an embodiment of the present invention discloses a radio frequency power synthesis device, comprising:

[0005] A power synthesis module, connected to the power amplifier modules of the plurality of RF power supplies, for receiving the RF powers output by the plurality of the power amplifier modules, and synthesizing the plurality of the RF powers into an input RF signal;

[0006] An impedance conversion module, connected to the output end of the power synthesis module, for performing impedance matching on the input radio frequency signal to generate an output radio frequency signal;

[0007] A directional coupler connected to the output end of the impedance transformation module, and used to collect the output radio frequency signal and generate radio frequency information;

[0008] A control module, whose signal input end is connected to the output end of the directional coupler and whose output end is connected to the power amplifier module, is used to control the radio frequency power output of the power amplifier module based on the radio frequency information.

[0009] Optionally, it also includes:

[0010] A plurality of power resistor groups are located between the power synthesis module and the power amplifier module, and are used to consume unbalanced power among the plurality of radio frequency powers.

[0011] Optionally, a single power resistor group is formed by connecting power resistors in series, or by connecting the power resistors in parallel, or by connecting the power resistors in series and in parallel;

[0012] Two ends of a single power resistor group are connected to a first input port and a second input port respectively, and are connected to different power amplifier modules through the first input port and the second input port.

[0013] Optionally, the power synthesis module comprises: two groups of coaxial cables and a magnet, the two groups of coaxial cables are located inside the magnet; a single group of coaxial cables comprises an inner core and a shielding layer;

[0014] The first input port is connected to the shielding layer of the first group of coaxial cables and the inner core of the second group of coaxial cables;

[0015] The second input port is commonly connected to the inner cores of the first group of coaxial cables and the shielding layers of the second group of coaxial cables.

[0016] Optionally, the impedance transformation module includes: a first permanent magnetic coil and a second permanent magnetic coil;

[0017] The first end of the first permanent magnetic coil is connected to the output end of the power synthesis module, and the second end of the first permanent magnetic coil is the output end connected to the directional coupler;

[0018] The first end of the second permanent magnetic coil is connected to the output end of the power synthesis module, and the second end of the second permanent magnetic coil is grounded.

[0019] Optionally, the impedance transformation module further includes: a capacitor to ground,

[0020] The first end of the ground capacitor is connected to the second end of the first permanent magnetic coil, and the second end of the ground capacitor is grounded.

[0021] Optionally, the control module includes:

[0022] A controller, connected to the directional coupler, configured to receive the radio frequency information and determine a power control instruction and a phase control instruction according to the radio frequency information;

[0023] A digital-to-analog converter, connected to the output end of the controller, for converting the digital quantity control instruction into an analog quantity control instruction, and sending the analog quantity control instruction to the power amplifier module;

[0024] The phase adjustment unit is connected to the output end of the controller and is used to receive the phase control instruction and control the output phase of the power amplifier module according to the phase control instruction.

[0025] In a second aspect of the present invention, an embodiment of the present invention discloses a radio frequency power synthesizer, including the radio frequency power synthesizer as described above.

[0026] Optionally, the radio frequency power synthesizer further includes:

[0027] The cooling module connected to the radio frequency power synthesis device is used to dissipate heat from the radio frequency power synthesis device.

[0028] In a third aspect of the present invention, an embodiment of the present invention discloses a radio frequency power supply, comprising the radio frequency power synthesis device described above, and a power amplifier module connected to the radio frequency power synthesis device.

[0029] Optionally, the radio frequency power supply further includes:

[0030] The cooling module connected to the radio frequency power synthesis device is used to dissipate heat from the radio frequency power synthesis device.

[0031] In the fourth aspect of the present invention, an embodiment of the present invention discloses a semiconductor process equipment, which includes a radio frequency power supply, a radio frequency matcher, and a process chamber. The radio frequency power supply is the above-mentioned radio frequency power supply, and the radio frequency power supply is used to output a DC voltage to an electrode of the process chamber. The radio frequency matcher is used to load the radio frequency power to the process chamber to excite the process gas in the process chamber to form plasma; the process chamber is used to process the wafer to be processed based on the plasma.

[0032] The embodiments of the present invention include the following advantages:

[0033] In the embodiment of the present invention, a power synthesis module is connected to the power amplifier modules of multiple RF power supplies to receive the RF power output by the multiple power amplifier modules, and the multiple RF power is synthesized into an input RF signal; an impedance conversion module is connected to the output end of the power synthesis module to perform impedance matching on the input RF signal to generate an output RF signal; a directional coupler is connected to the output end of the impedance conversion module to collect the output RF signal to generate RF information; a control module signal input end is connected to the output end of the directional coupler, and the output end is connected to the power amplifier module to control the output of the power amplifier module based on the RF information. By recombining the RF power signals of multiple RF power supplies into an adjusted RF power output signal, the RF power output is adjusted without changing the original RF power supply structure. When high power output is required, two or more RF power supplies are used for high power synthesis, and during the working process, the output signal is processed by the control module to control the input of the closed-loop semiconductor high-power RF signal and achieve a high-precision low-power output function. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 is a structural block diagram of an embodiment of a radio frequency power synthesis device of the present invention;

[0035] Figure 2 is a structural block diagram of another embodiment of a radio frequency power synthesis device of the present invention;

[0036] Figure 3 is a circuit diagram of another embodiment of a radio frequency power synthesis device of the present invention;

[0037] Figure 4 It is a circuit diagram of a power synthesis module of the present invention;

[0038] Figure 5 It is a port connection diagram of a coaxial cable of a power synthesis module of the present invention;

[0039] Figure 6 It is a circuit diagram of an impedance transformation module of the present invention;

[0040] Figure 7 It is a schematic diagram of a power synthesis module and an impedance conversion module magnet of the present invention;

[0041] Figure 8 is a schematic diagram of a radio frequency power synthesizer of the present invention;

[0042] Fig. 9 It is a tree structure block diagram of a semiconductor process equipment of the present invention. DETAILED DESCRIPTION

[0043] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0044] Reference Figure 1 , shows a structural block diagram of an embodiment of a radio frequency power synthesis device of the present invention, which may specifically include the following modules:

[0045] A power synthesis module 100, connected to a plurality of power amplifier modules 600 of RF power supplies, for receiving RF powers output by the plurality of power amplifier modules 600, and synthesizing the plurality of RF powers into an input RF signal;

[0046] An impedance transformation module 200, connected to the output end of the power synthesis module 100, for performing impedance matching on the input RF signal to generate an output RF signal;

[0047] A directional coupler 300, connected to the output end of the impedance transformation module 200, for collecting the output RF signal and generating RF information;

[0048] The control module 400 has a signal input end connected to the output end of the directional coupler 300 and an output end connected to the power amplifier module 600, and is used to control the RF power output of the power amplifier module 600 based on the RF information.

[0049] In the embodiment of the present invention, the radio frequency power synthesis device is composed of at least a power synthesis module 100 , an impedance transformation module 200 , a directional coupler 300 and a control module 400 .

[0050] The input end of the power synthesis module 100 is connected to the power amplifier modules 600 of multiple RF power supplies. Specifically, the power synthesis module 100 has multiple input ends, and one input end is connected to the power amplifier module 600 of one RF power supply. The power synthesis module 100 receives the RF power output by the power amplifier modules 600 of multiple RF power supplies, and synthesizes the RF power output by the multiple power amplifier modules 600 into one input RF signal.

[0051] The input end of the impedance transformation module 200 is connected to the output end of the power synthesis module 100, receives the input RF signal output by the power synthesis module 100, performs impedance matching on the input RF signal based on adjusting the impedance between its own input end and its own output end, and generates an output RF signal. The synthesized impedance can be determined according to the output parameters of the RF power supply, which is not limited in the embodiment of the present invention. In an example of the present invention, the synthesized impedance can be 50 ohms.

[0052] The input end of the directional coupler 300 is connected to the output end of the impedance transformation module 200. The directional coupler 300 collects the output RF signal and generates RF information; the RF information includes the intensity, direction and other information of the output RF signal. The directional coupler 300 also outputs the collected output RF signal to the load for use by the load.

[0053] The signal input end of the control module 400 is connected to the output end of the directional coupler 300, and receives the RF information sent by the directional coupler 300. After analyzing the RF information based on the internally set conditions, the control module 400 obtains the power amplitude of the RF power supply output signal, and the control module 400 adjusts the output of the original power amplifier module 600 of the RF power supply based on the internally set conditions. Specifically, different control instructions can be sent to the original power amplifier module 600 of the RF power supply. The control instructions contain data for adjusting the RF power intensity, the direction of adjustment, and other information. For example, the control instruction is to increase the RF power by 10 watts. The control instruction is sent to the power amplifier module 600 to control the RF power output of the power amplifier module 600.

[0054] In the embodiment of the present invention, a power synthesis module 100 is connected to a power amplifier module 600 of multiple RF power supplies, receives the RF power output by the multiple power amplifier modules 600, and synthesizes the multiple RF powers into an input RF signal; an impedance transformation module 200 is connected to the output end of the power synthesis module 100, performs impedance matching on the input RF signal, and generates an output RF signal; a directional coupler 300 is connected to the output end of the impedance transformation module 200, performs signal acquisition on the output RF signal, and generates RF information; a control module 400 signal input end is connected to the output end of the directional coupler 300, and the output end is connected to the power amplifier module 600, and controls the RF power output of the power amplifier module 600 based on the RF information. By directly connecting to the power amplifier modules 600 of multiple RF power supplies, the RF power signals of the multiple RF power supplies are recombined into adjusted power output signals, thereby achieving adjustment of the output RF power; since the power amplifier module 600 is a module for the RF power supply to output RF power to the outside, connecting to it is equivalent to connecting to the output end of the RF power supply, and synthesis is performed based on the RF power output by the power amplifier module 600, without changing other parts of the RF power supply, thereby achieving adjustable output power without changing the original RF power supply structure, and when high-power output is required, two or more RF power supplies can be used for high-power synthesis, and during operation, the control module 400 processes the output signal to achieve power input adjustment of the closed-loop semiconductor power RF signal, thereby achieving high-precision power output function.

[0055] Reference Figure 2 , showing a structural block diagram of another embodiment of the radio frequency power synthesis device of the present invention, referring to Figure 3 , shows a circuit diagram of another radio frequency power synthesis device embodiment of the present invention; the radio frequency power synthesis device may specifically include the following modules:

[0056] A power synthesis module 100, connected to a plurality of power amplifier modules 600 of RF power supplies, for receiving RF powers output by the plurality of power amplifier modules 600, and synthesizing the plurality of RF powers into an input RF signal;

[0057] A plurality of power resistor groups 500, located between the power synthesis module 100 and the power amplifier module 600, for consuming unbalanced power in the plurality of radio frequency powers;

[0058] An impedance transformation module 200, connected to the output end of the power synthesis module 100, for performing impedance matching on the input RF signal to generate an output RF signal;

[0059] A directional coupler 300, connected to the output end of the impedance transformation module 200, for collecting the output RF signal and generating RF information;

[0060] The control module 400 has a signal input end connected to the output end of the directional coupler 300 and an output end connected to the power amplifier module 600, and is used to control the RF power output of the power amplifier module 600 based on the RF information.

[0061] In an embodiment of the present invention, multiple power resistor groups 500 are located between the power amplifier module 600 and the power synthesis module 100 of the RF power supply, and the multiple power resistor groups 500 will pass the output RF power of the power amplifier module 600. Since the output RF power of each power amplifier module 600 is not the same, that is, the power difference between the maximum output RF power and the minimum output RF power among multiple output RF powers is the unbalanced power. The power resistor will add the unbalanced power between the RF power output by the power amplifier modules 600 at both ends to itself, and consume the unbalanced power through heat generation by the power resistor, so that the multiple groups of RF power input to the power synthesis module 100 are balanced with each other, and the multiple power resistor groups 500 are passed into the power synthesis module 100, and the RF power output by each power amplifier module 600 is isolated from each other, thereby increasing the isolation between the power amplifier modules 600.

[0062] The power resistor group 500 is connected to the power synthesis module 100 via a coaxial line. Multiple RF powers enter the power synthesis module 100 . The power synthesis module 100 synthesizes the multiple RF powers into one input RF signal and outputs the input RF signal to the impedance transformation module 200 .

[0063] The impedance transformation module 200 is used to adjust the impedance matching between the power amplifier module 600 of the synthesized RF power supply and the load, transform the synthesized impedance to a preset impedance, generate an output RF signal, and output it to the directional coupler 300 via the coaxial line.

[0064] The directional coupler 300 collects the output RF signal, monitors the real-time power output status, and feeds back to the control module 400, which is connected to the output port of the RF power synthesis device through a coaxial line to provide the output RF signal to the load.

[0065] After analyzing the RF information based on internal settings, the control module 400 obtains the power amplitude of the RF power supply output signal, and sends corresponding instructions to the original power amplifier module 600 of the RF power supply according to the settings to control the phase output and magnitude output of the power amplifier module 600.

[0066] In an optional embodiment of the present invention, a single group of the power resistor group 500 is formed by connecting the power resistors in series, or by connecting the power resistors in parallel, or by connecting the power resistors in series and in parallel;

[0067] Two ends of a single power resistor group 500 are respectively connected to a first input port 700 and a second input port 800 , and are connected to different power amplifier modules 600 through the first input port 700 and the second input port 800 .

[0068] In an embodiment of the present invention, a single power resistor group 500 is formed by connecting power resistors in series, or by connecting power resistors in parallel, or by connecting power resistors in series and in parallel. That is, the resistors in a single power resistor group 500 can form a power resistor group 500 in a pure series, pure parallel, or series-parallel mixed manner. Among them, the power resistor group 500 is formulated according to the RF power level, and the power resistors that can be used can be various types of power resistors; such as beryllium oxide resistors, aluminum oxide resistors, aluminum nitride resistors, etc. In one example of the present invention, a single power resistor group 500 is formed by connecting beryllium oxide resistors in series.

[0069] The two ends of the single power resistor group 500 are respectively connected to the first input port 700 and the second input port 800, and the first input port 700 and the second input port 800 are connected to different power amplifier modules 600, that is, the two ends of the single power resistor group 500 are connected to different power amplifier modules 600 through different input ports.

[0070] In addition, when there are more than two power amplifier modules 600, the first input port 700 and the second input port 800 may also be increased accordingly, so that the power synthesis device of the embodiment of the present invention is applicable to more working conditions and has improved practicality.

[0071] Reference Figure 4 and Figure 5In an optional embodiment of the present invention, the power synthesis module 100 includes: two groups of coaxial cables and a magnet 3, the two groups of coaxial cables are located inside the magnet 3; a single group of the coaxial cables includes an inner core and a shielding layer;

[0072] The first input port 700 is connected to the shielding layer of the first group of coaxial cables and the inner core of the second group of coaxial cables;

[0073] The second input port 800 is commonly connected to the inner cores of the first group of coaxial cables and the shielding layers of the second group of coaxial cables.

[0074] In an embodiment of the present invention, the power synthesis module 100 is composed of two groups of coaxial cables, with the magnet 3 as the main body. The two groups of coaxial cables are wound inside the magnet 3, so as to improve the balance of multi-channel inputs, wherein the first input port 700 and the second input port 800 are respectively connected to the inner core and the shielding layer of the two groups of coaxial cables of the power synthesis module 100. Specifically, the inner core of the first group of coaxial cables is connected to the second input port 800, and the first group of coaxial cables is wound to the output end through the magnet 3; the shielding layer of the first group of coaxial cables is connected to the first input port 700, and is wound to the output end through the magnet 3; correspondingly, the inner core of the second group of coaxial cables is connected to the first input port 700, and is wound to the output end through the magnet 3; the shielding layer of the second group of coaxial cables is connected to the second input port 800, and is wound to the output end through the magnet 3. Among them, the connection between the coaxial cable and the input port can be fixed by welding, so that the coaxial cable and the input port maintain a fixed connection. You can refer to Figure 5 The inner core of the first group of coaxial cables 1 is welded by the second input port 800 and is wound to the output end through the magnetic material; the shielding layer 1b of the first group of coaxial cables 1 is welded to the first input port 700 and is wound to the output port; the inner core 2a of the second group of coaxial cables 2 is welded to the first input port 700 and is wound to the output end through the magnetic material; the shielding layer 2b of the second group of coaxial cables is wound between the second input port 800 and the output port; by directly connecting to the input port on the coaxial cable, the signal can be directly transmitted, reducing losses while reducing material costs.

[0075] Reference Figure 6 , in an optional embodiment of the present invention, the impedance transformation module 200 includes: a first permanent magnetic coil 4 and a second permanent magnetic coil 5;

[0076] The first end of the first permanent magnetic coil 4 is connected to the output end of the power synthesis module 100, and the second end of the first permanent magnetic coil 4 is the output end connected to the directional coupler 300;

[0077] The first end of the second permanent magnetic coil 5 is connected to the output end of the power synthesis module 100 , and the second end of the second permanent magnetic coil 5 is grounded.

[0078] In an embodiment of the present invention, the impedance transformation module 200 can be composed of a permanent magnet coil formed by winding a permanent magnet 3 with multiple strands of wire, so that the impedance transformation module 200 has a good skin effect. Specifically, the impedance of the synthesized RF power is matched by the synthesis of the permanent magnet coil. When the two RF powers are synthesized, the front-stage impedance is connected in parallel by two output signals that meet the matching impedance. In order to ensure that the synthesized signal output is still an impedance value that meets the matching impedance, according to the impedance formula after the coils are connected in parallel:

[0079]

[0080]

[0081] Among them, V in is the input voltage, V out is the output voltage, R in is the input impedance, R out is the output impedance, N1 is the number of turns of the first permanent magnetic coil 4, and N2 is the sum of the number of turns of the first permanent magnetic coil 4 and the number of turns of the second permanent magnetic coil 5.

[0082] In one example of the present invention, the commonly used matching impedance in the RF power supply is 50 ohms, and the impedance value in the matching impedance coil can be 50 ohms. When two groups of RF power are combined into two, taking the conventional RF power output and input signal with a matching impedance of 50 ohms as an example, substituting into the above impedance formula, the ratio of the number of turns of the first permanent magnet coil 4 to the sum of the number of turns of the first permanent magnet coil 4 and the second permanent magnet coil 5 is 5:7, and the ratio of the three groups of RF power in the three-in-one power synthesis is 4:7, and the ratio of the four groups of RF power in the four-in-one power synthesis is 1:2. Based on the principle of transmission line transformer, a smaller voltage can be boosted, and an increased voltage can be stepped down, corresponding to a wider frequency range, which can be used for power synthesis of RF power supplies of multiple frequency bands, and can meet the use requirements of semiconductor equipment for RF power frequency modulation, frequency sweeping and other functions.

[0083] Furthermore, the wire head end of the first permanent magnetic coil 4 is fixedly connected to the output wire of the output end of the power synthesis module 100 by welding, that is, the first permanent magnetic coil 4 is integrated and connected to the output end of the power synthesis module 100. Correspondingly, the wire head end of the second permanent magnetic coil 5 is fixedly connected to the output wire of the output end of the power synthesis module 100 by welding.

[0084] Furthermore, due to the error between the turns ratios, in an optional embodiment of the present invention, the impedance transformation module 200 further includes: a capacitor 6 to ground,

[0085] The first end of the ground capacitor 6 is connected to the second end of the first permanent magnetic coil 4 , and the second end of the ground capacitor 6 is grounded.

[0086] By connecting a ground capacitor 6 at the output end of the impedance transformation module 200, that is, the second end of the first permanent magnet coil 4, and the other end of the ground capacitor 6 is grounded, the error is filtered out through the filtering effect of the ground capacitor 6, and the noise interference is removed, so that the impedance matching after the RF power synthesis is more accurate.

[0087] Further, refer to Figure 7 The magnets used in the power synthesis module and the impedance transformation module can be composed of annular magnetic cores, so that the magnetic materials can be quickly replaced according to different needs, and magnets of different shapes can be used, and are not limited to using only double-hole magnetic core materials, thereby improving practicality. Taking a step back, when necessary, the double-hole magnetic core can still be used as the magnet in the power synthesis module and the impedance transformation module.

[0088] In addition, the power synthesis module and the impedance transformation module can also be assembled together through a mechanical structure, using the same magnetic material to improve the composite type and compatibility, which can better save the use space.

[0089] In an optional embodiment of the present invention, the control module includes:

[0090] A controller, connected to the directional coupler, configured to receive the radio frequency information and determine a power control instruction and a phase control instruction according to the radio frequency information;

[0091] A digital-to-analog converter, connected to the output end of the controller, for converting the digital quantity control instruction into an analog quantity control instruction, and sending the analog quantity control instruction to the power amplifier module;

[0092] The phase adjustment unit is connected to the output end of the controller and is used to receive the phase control instruction and control the output phase of the power amplifier module according to the phase control instruction.

[0093] In an embodiment of the invention, the control module is composed of a controller, a digital-to-analog converter and a phase adjustment unit.

[0094] The controller may be one of an FPGA (Field program gate way, Field Programmable Logic Gate Array) chip, an MCU (Microcontroller Unit, Micro Control Unit) chip, a DSP (Digital Signal Process, Digital Signal Processing Technology) chip, and a CPLD (Complex Programmable Logic Device, Complex Programmable Logic Device) chip. In one example of the present invention, an FPGA chip is used as the controller. The controller is connected to a directional coupler, receives radio frequency information, and based on the radio frequency information analysis, generates a power control instruction to send to a digital-to-analog converter, and generates a phase control instruction to send to a phase adjustment unit.

[0095] The digital-to-analog converter is connected to the output end of the controller, converts the digital quantity information in the digital quantity control instruction into analog quantity, generates an analog quantity control instruction, and sends the analog quantity control instruction to the power amplifier module. The power amplifier module controls the output RF power based on the analog quantity control instruction.

[0096] The phase adjustment unit can be a DDS (Direct Digital Synthesizer) chip, or a phase shift circuit, or a transmission line of a certain length. The phase adjustment unit receives a phase control instruction sent by the controller and controls the output phase of the power amplifier module according to the phase control instruction.

[0097] After the power synthesis device is built, the phase difference between the first input port 700 and the second input port 800 is measured and adjusted to zero through an oscilloscope; when the load-end semiconductor equipment requires high-precision low-power output, the FPGA controller controls the digital-to-analog converter to reduce the power, and adjusts the phase difference through the phase adjustment unit to complete the high-precision low-power output function of the RF power supply;

[0098] According to the derivation of simple harmonic vibration synthesis in the same direction and frequency, the first input port 700 of the first power amplifier module 600 outputs the RF power signal x1, and the second input port 800 of the second power amplifier module 600 outputs the RF power signal x2, which can be expressed as follows:

[0099] x1=A1cos(ωt+Ф1)

[0100] x2=A2cos(ωt+Ф2)

[0101] The synthetic signal x=x1+x2, substituting x1 and x2, we get

[0102] x=A1cos(ωt+Ф1)+A2cos(ωt+Ф2)

[0103] =(A1cosФ1+A2cosФ2)cosωt-(A1sinФ1+A2sinФ2)sinωt

[0104] Let A1cosФ1+A2cosФ2=AcosФ0, A1sinФ1+A2sinФ2=AsinФ0, then the output signal x can be expressed as follows:

[0105] x=AcosФ0cosωt+AsinФ0sinωt=Acos(ωt+Ф0)

[0106]

[0107] In the embodiment of the present invention, the initial phase angle Φ between the first input port and the second input port 800 is calibrated by an oscilloscope during the construction of the power synthesis device. 10 , Ф 20 With the initial RF power amplitude A1, A2, Ф 10 =Ф 20 , A1 = A2. Then, the output power is controlled by the digital-to-analog converter and the phase adjustment unit adjusts the phase difference to complete the output of power synthesis.

[0108] When two identical sine waves are synthesized, the output end is still a sine wave of the same frequency, but the amplitude is affected by the phase difference, and there will be superposition or cancellation. When the phase difference between the two inputs is 2kπ, k=0,±1,±2…, the output power of the high-power synthesizer is When the phase difference between the two inputs is 2(k+1)π, k=0,±1,±2…, in principle, the power combiner output power That is, by adjusting the phase difference between the two inputs, the output power A can be achieved to be any value in the range of (|A1-A2|, A1+A2). It can be seen that the signal phase adjustment of the input port can be achieved through the control module. By transforming the phase difference, the high-power input demand of the semiconductor equipment can be met while being converted into low-power output.

[0109] The embodiment of the present invention does not change the original RF power supply structure, realizes the power synthesis function of multiple RF power supplies, and adjusts the power RF output. And the structure of the embodiment of the present invention is simple and easy to implement. Power resistors are used for simple series and parallel connection to improve the isolation of each input port, and the power synthesis module is wound by a combination of a coaxial line and a single-hole magnetic ring. Finally, the impedance transformation module is wound through the transmission line to complete the synthesis step. The circuit design is simple, the composition of each module is easy to reproduce, and the materials are universal, so it has strong robustness; and the transmission line transformer principle is used, which can boost a smaller voltage and reduce the increased voltage. It corresponds to a wider frequency range and can be used for power synthesis of RF power supplies in multiple frequency bands, which can meet the use requirements of semiconductor equipment for RF power frequency modulation, frequency sweeping and other functions. The phase adjustment of the input port can be realized through the control module, and the transformation of the phase difference can meet the high power input requirements of the semiconductor equipment while converting it into low power output.

[0110] It should be noted that, for the sake of simplicity, the method embodiments are described as a series of action combinations, but those skilled in the art should be aware that the embodiments of the present invention are not limited by the order of the actions described, because according to the embodiments of the present invention, certain steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all preferred embodiments, and the actions involved are not necessarily required by the embodiments of the present invention.

[0111] An embodiment of the present invention discloses a radio frequency power synthesizer, comprising the radio frequency power synthesizer as described above.

[0112] In an embodiment of the present invention, the RF power synthesizer includes the RF power synthesizer as described above, and synthesizes the output power of multiple RF power supplies. The RF power synthesizer can be integrated inside the RF power supply, that is, inside the RF power supply, and connected to each power amplifier module. The RF power synthesizer can also be independently arranged outside the RF power supply, and connected to the output end of the RF power supply with a connecting line such as a cable.

[0113] Further, refer to Figure 8 , the radio frequency power synthesizer further comprises:

[0114] The cooling module 20 connected to the RF power synthesizer 10 is used to dissipate heat from the RF power synthesizer 10 .

[0115] In an embodiment of the present invention, the RF power synthesizer may further include a cooling module 20 connected to the RF power synthesizer 10 . The cooling module 20 may be an air-cooled module or a water-cooled module to dissipate heat from the RF power synthesizer 10 .

[0116] The embodiment of the present invention discloses a radio frequency power supply including the radio frequency power synthesis device as described above and a power amplifier module connected to the radio frequency power synthesis device.

[0117] In an embodiment of the present invention, the RF power supply includes a power amplifier module and an RF power synthesizer; the RF power synthesizer is integrated inside the RF power supply, that is, the input end of the RF power synthesizer is connected to the output end of the power amplifier module inside the RF power supply, the power amplifier module outputs RF power, and the RF power synthesizer synthesizes the RF power output by the power amplifier module to output high-power RF power.

[0118] Furthermore, the radio frequency power supply also includes:

[0119] The cooling module connected to the radio frequency power synthesis device is used to dissipate heat from the radio frequency power synthesis device.

[0120] In an embodiment of the present invention, the RF power supply further includes a cooling module connected to the RF power synthesis device. The cooling module may be an air-cooled module or a water-cooled module to dissipate heat from the RF power synthesis device.

[0121] An embodiment of the present invention also discloses a semiconductor process equipment, which includes a radio frequency power supply, a radio frequency matcher, and a process chamber. The radio frequency power supply is the above-mentioned radio frequency power supply, and the radio frequency power supply is used to output a DC voltage to the electrodes of the process chamber. The radio frequency matcher is used to load the radio frequency power to the process chamber to excite the process gas in the process chamber to form plasma; the process chamber is used to process the wafer to be processed based on the plasma.

[0122] Specifically, please refer to Fig. 9 , the plasma chamber sub-module 910 (i.e., the process chamber) further includes a cathode (metal target) sub-module 911 and an anode (sputtered object) sub-module 912. The positive electrode of the RF power supply 920 is grounded through the RF matcher 930 and connected to the anode (sputtered object) sub-module 912 of the plasma chamber 910, and the negative electrode of the RF power supply 920 is connected to the cathode (metal target) sub-module 911 of the plasma chamber 910. After the positive and negative electrodes of the RF power supply 92 are connected to the plasma chamber sub-module 910, a plasma is generated by using a DC high voltage, and the generated plasma rushes to the cathode (metal target) sub-module 911. The metal atoms of the cathode (metal target) sub-module 911 are sputtered out and attached to the anode (sputtered object) sub-module 912, completing the thin film deposition of the anode (sputtered object).

[0123] When the process requires increased RF power, the power amplifier module in the RF power supply 92 can output multiple RF powers at the same time, and the RF power synthesis device in the RF power supply 92 synthesizes the above-mentioned multiple RF powers and outputs a synthesized RF power to the process chamber.

[0124] As for the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0125] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0126] It will be appreciated by those skilled in the art that the embodiments of the present invention may be provided as methods, devices, or computer program products. Therefore, the embodiments of the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the embodiments of the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0127] The embodiments of the present invention are described with reference to the flowcharts and / or block diagrams of the methods, terminal devices (systems), and computer program products according to the embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of the processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing terminal device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing terminal device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0128] These computer program instructions may also be stored in a computer readable memory capable of directing a computer or other programmable data processing terminal device to operate in a specific manner, so that the instructions stored in the computer readable memory produce a manufactured product including an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0129] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal device so that a series of operating steps are executed on the computer or other programmable terminal device to produce a computer-implemented process, thereby providing instructions for executing on the computer or other programmable terminal device to implement the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0130] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the embodiments of the present invention.

[0131] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or terminal device including the elements.

[0132] The above is a detailed introduction to a radio frequency power synthesis device and its application equipment provided by the present invention. Specific examples are used in this article to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea; at the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. A radio frequency power synthesis device, characterized in that: include: A power synthesis module, connected to the power amplifier modules of the plurality of RF power supplies, for receiving the RF powers output by the plurality of the power amplifier modules, and synthesizing the plurality of the RF powers into an input RF signal; An impedance conversion module, connected to the output end of the power synthesis module, for performing impedance matching on the input radio frequency signal to generate an output radio frequency signal; A directional coupler connected to the output end of the impedance transformation module, and used to collect the output radio frequency signal and generate radio frequency information; A control module, whose signal input end is connected to the output end of the directional coupler and whose output end is connected to the power amplifier module, is used to control the radio frequency power output of the power amplifier module based on the radio frequency information.

2. The radio frequency power synthesis device according to claim 1, characterized in that: Also includes: A plurality of power resistor groups are located between the power synthesis module and the power amplifier module, and are used to consume unbalanced power among the plurality of radio frequency powers.

3. The radio frequency power synthesis device according to claim 2, characterized in that: A single power resistor group is formed by connecting power resistors in series, or by connecting the power resistors in parallel, or by connecting the power resistors in series and in parallel; Two ends of a single power resistor group are connected to a first input port and a second input port respectively, and are connected to different power amplifier modules through the first input port and the second input port.

4. The radio frequency power synthesis device according to claim 3, characterized in that: The power synthesis module comprises: two groups of coaxial cables and a magnet, wherein the two groups of coaxial cables are located inside the magnet; a single group of coaxial cables comprises an inner core and a shielding layer; The first input port is connected to the shielding layer of the first group of coaxial cables and the inner core of the second group of coaxial cables; The second input port is commonly connected to the inner cores of the first group of coaxial cables and the shielding layers of the second group of coaxial cables.

5. The radio frequency power synthesis device according to claim 1, characterized in that: The impedance transformation module includes: a first permanent magnetic coil and a second permanent magnetic coil; The first end of the first permanent magnetic coil is connected to the output end of the power synthesis module, and the second end of the first permanent magnetic coil is the output end connected to the directional coupler; The first end of the second permanent magnetic coil is connected to the output end of the power synthesis module, and the second end of the second permanent magnetic coil is grounded.

6. The radio frequency power synthesis device according to claim 5, characterized in that: The impedance transformation module also includes: a capacitor to ground, The first end of the ground capacitor is connected to the second end of the first permanent magnetic coil, and the second end of the ground capacitor is grounded.

7. The radio frequency power synthesis device according to claim 5, characterized in that: The control module comprises: A controller, connected to the directional coupler, configured to receive the radio frequency information and determine a power control instruction and a phase control instruction according to the radio frequency information; A digital-to-analog converter, connected to the output end of the controller, for converting the digital quantity control instruction into an analog quantity control instruction, and sending the analog quantity control instruction to the power amplifier module; The phase adjustment unit is connected to the output end of the controller and is used to receive the phase control instruction and control the output phase of the power amplifier module according to the phase control instruction.

8. A radio frequency power synthesizer, characterized in that: It comprises the radio frequency power synthesis device as described in any one of claims 1 to 7.

9. The radio frequency power synthesizer according to claim 8, characterized in that: Also includes: The cooling module connected to the radio frequency power synthesis device is used to dissipate heat from the radio frequency power synthesis device.

10. A radio frequency power supply, characterized in that: It comprises the radio frequency power synthesis device as described in any one of claims 1 to 7, and a power amplifier module connected to the radio frequency power synthesis device.

11. The radio frequency power supply according to claim 10, characterized in that: Also includes: The cooling module connected to the radio frequency power synthesis device is used to dissipate heat from the radio frequency power synthesis device.

12. A semiconductor process equipment, characterized in that: The semiconductor process equipment comprises a radio frequency power supply, a radio frequency matcher, and a process chamber, wherein the radio frequency power supply is the radio frequency power supply according to any one of claims 10 to 11, the radio frequency power supply is used to output a DC voltage to an electrode of the process chamber, and the radio frequency matcher is used to load the radio frequency power to the process chamber to excite the process gas in the process chamber to form plasma; The process chamber is used for processing a wafer to be processed based on the plasma.

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