Display substrate and display panel

Abstract

The embodiment of the invention provides a display substrate and a display panel, relates to the technical field of display, and aims to solve the problem of mutual crosstalk between adjacent sub-pixels in the display substrate. The display substrate comprises a plurality of sub-pixels which are arranged in multiple rows and multiple columns, each sub-pixel comprises a light-emitting device, and each light-emitting device comprises a first electrode, a first light-emitting unit, a charge generation lamination layer, a second light-emitting unit and a second electrode which are sequentially laminated. Wherein in the first direction, the colors of the light emitted by the light-emitting devices in the two adjacent sub-pixels are different, and the miscellaneous peak proportion of emission peaks in a light-emitting spectrum corresponding to the light emitted by the light-emitting devices in at least part of the sub-pixels is smaller than or equal to 5%. The display substrate is used for emitting light.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a display substrate and a display panel. Background Art

[0002] OLED (Organic Light Emitting Diode) display devices have become one of the most competitive and promising display devices due to their advantages such as self-luminescence, fast response speed, high brightness, full viewing angle, and flexible display. Summary of the invention

[0003] An object of the embodiments of the present disclosure is to provide a display substrate and a display panel, which are used to improve the problem of crosstalk between adjacent sub-pixels in the display substrate.

[0004] To achieve the above objectives, the embodiments of the present disclosure provide the following technical solutions:

[0005] On the one hand, a display substrate is provided. The display substrate includes a plurality of sub-pixels arranged in multiple rows and columns, each of the sub-pixels includes a light-emitting device, and the light-emitting device includes a first electrode, a first light-emitting unit, a charge generation stack, a second light-emitting unit, and a second electrode stacked in sequence. Wherein, along the first direction, the colors of the light emitted by the light-emitting devices in two adjacent sub-pixels are different, and the proportion of the impurity peaks in the emission peak corresponding to the light emitted by the light-emitting devices in at least some of the sub-pixels is less than or equal to 5%.

[0006] In the above display substrate, the proportion of the stray peak of the light emitted by the light-emitting device is set to be less than or equal to 5%, thereby reducing the crosstalk of a single light-emitting device of a certain color to adjacent light-emitting devices, improving the color deviation problem of the display substrate, and improving the display quality of the display substrate.

[0007] In some embodiments, when the grayscale of the light-emitting device in the sub-pixel is higher than the threshold grayscale, the proportion of the impurity peak of the emission peak in the emission spectrum corresponding to the light emitted by the light-emitting device in at least some of the sub-pixels is approximately 0%. When the grayscale of the light-emitting device in the sub-pixel is lower than the threshold grayscale, the proportion of the impurity peak of the emission peak in the emission spectrum corresponding to the light emitted by the light-emitting device in at least some of the sub-pixels is less than or equal to 4%.

[0008] In some embodiments, the lateral resistance of the charge generation stack is greater than or equal to 100 GΩ / μm 2

[0009] In some embodiments, the lateral resistance of the charge generation stack is less than or equal to 260 GΩ / μm 2 .

[0010] In some embodiments, the charge generation stack includes an n-type charge generation layer and a p-type charge generation layer, wherein the p-type charge generation layer is located on a side of the n-type charge generation layer away from the first electrode. The charge generation stack is configured such that: the n-type charge generation layer transfers electrons to the first light-emitting unit, and the p-type charge generation layer transfers holes to the second light-emitting unit.

[0011] In some embodiments, the minimum distance between the n-type charge generation layer close to the p-type charge generation layer and the first light-emitting unit is smaller than the minimum distance between the first electrode away from the first light-emitting unit and the first light-emitting unit.

[0012] In some embodiments, the thickness of the n-type charge generation layer ranges from

[0013] In some embodiments, the thickness of the n-type charge generation layer ranges from

[0014] In some embodiments, the n-type charge generation layer is doped with a first impurity, and the doping concentration of the first impurity in the n-type charge generation layer is in a range of 0.5% to 2%.

[0015] In some embodiments, the p-type charge generation layer is doped with a second impurity, and the doping concentration of the second impurity in the p-type charge generation layer is in a range of 5% to 15%.

[0016] In some embodiments, when the doping concentration of the first impurity in the n-type charge generation layer is in the range of 0.5% to 1%, the doping concentration of the second impurity in the p-type charge generation layer is in the range of 10% to 15%. Alternatively, when the doping concentration of the first impurity in the n-type charge generation layer is in the range of 1% to 2%, the doping concentration of the second impurity in the p-type charge generation layer is in the range of 5% to 10%.

[0017] In some embodiments, the lateral resistance of the charge generation stack is in the range of 180 GΩ / μm. 2～ 260GΩ / μm 2 When the doping concentration of the second impurity in the p-type charge generation layer is in the range of 5% to 10%. Alternatively, the lateral resistance value of the charge generation stack is in the range of 100 GΩ / μm. 2～ 180GΩ / μm 2 When the doping concentration of the second impurity in the p-type charge generation layer is in the range of 10% to 15%.

[0018] In some embodiments, along the first direction, a minimum distance between two adjacent sub-pixels is greater than or equal to 19 μm.

[0019] In some embodiments, along the first direction, a minimum distance between two adjacent sub-pixels is less than or equal to 24 μm.

[0020] In some embodiments, the thickness of the p-type charge generation stack ranges from

[0021] In some embodiments, the light emitting device further comprises a hole transport layer and an electron transport layer. The hole transport layer is located between the first electrode and the first light emitting unit, and the electron transport layer is located between the second electrode and the second light emitting unit.

[0022] In some embodiments, the light emitting device further comprises a first hole blocking layer and a second hole blocking layer, wherein the first hole blocking layer is located between the first light emitting unit and the charge generation stack, and the second hole blocking layer is located between the electron transport layer and the second light emitting unit.

[0023] In some embodiments, the plurality of sub-pixels include a plurality of first sub-pixels, a plurality of second sub-pixels, and a plurality of third sub-pixels that emit light of different colors. The third sub-pixel is a blue sub-pixel, and the size of the blue sub-pixel is larger than the size of any of the plurality of first sub-pixels and the plurality of second sub-pixels.

[0024] In another aspect, a display panel is provided, wherein the display panel comprises the display substrate as described in any one of the above embodiments.

[0025] The above-mentioned display panel has the same structure and beneficial technical effects as the display substrate provided in some of the above-mentioned embodiments, which will not be described in detail here.

[0026] In order to more clearly illustrate the technical solutions in the present disclosure, the following briefly introduces the drawings required to be used in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can also be obtained based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams, and are not limitations on the actual size of the product involved in the embodiments of the present disclosure, the actual process of the method, the actual timing of the signal, etc.

[0027] Figure 1 is a structural diagram of a display device according to some embodiments;

[0028] Figure 2 is a structural diagram of a display panel according to some embodiments;

[0029] Figure 3 for Figure 2 Sectional view along the B-B' direction;

[0030] Figure 4 is a structural diagram of a light emitting device according to some embodiments;

[0031] Figure 5 is a spectrum diagram of a red light emitting device according to some possible implementations;

[0032] Figure 6 is a spectrum diagram of a green light emitting device according to some possible implementations;

[0033] Figure 7 is a spectrum diagram of a blue light emitting device according to some possible implementations;

[0034] Figure 8 Spectrum diagram of a red light emitting device according to other possible implementations;

[0035] Fig. 9 Spectrum diagram of a green light emitting device according to other possible implementations;

[0036] Fig.10 Spectrum diagram of a blue light emitting device according to other possible implementations;

[0037] Fig.11 is a spectrum diagram of a red light emitting device according to some embodiments;

[0038] Fig.12 is a spectrum diagram of a green light emitting device according to some embodiments;

[0039] Fig.13 is a spectrum diagram of a blue light emitting device according to some embodiments;

[0040] Fig.14 is a structural diagram of a light emitting device according to some other embodiments;

[0041] Fig.15 is a spectrum diagram of a red light emitting device according to some other embodiments;

[0042] Fig.16 is a spectrum diagram of a green light emitting device according to some other embodiments;

[0043] Fig.17 is a spectrum diagram of a blue light emitting device according to some other embodiments;

[0044] Fig.18 is a spectrum diagram of a red light emitting device according to some further embodiments;

[0045] Fig.19is a spectrum diagram of a green light emitting device according to some further embodiments;

[0046] Fig. 20 is a spectrum diagram of a blue light emitting device according to some further embodiments;

[0047] Fig.21 is a spectrum diagram of a red light emitting device according to some further embodiments;

[0048] Fig. 22 is a spectrum diagram of a green light emitting device according to some further embodiments;

[0049] Fig.23 is a spectrum diagram of a blue light emitting device according to some further embodiments;

[0050] Fig.24 is a spectrum diagram of a red light emitting device according to some further embodiments;

[0051] Fig.25 is a spectrum diagram of a green light emitting device according to some further embodiments;

[0052] Fig.26 is a spectrum diagram of a blue light emitting device according to some further embodiments;

[0053] Fig. 27 is a spectrum diagram of a red light emitting device according to some further embodiments;

[0054] Fig.28 is a spectrum diagram of a green light emitting device according to some further embodiments;

[0055] Fig.29 is a spectrum diagram of a blue light emitting device according to some further embodiments;

[0056] Fig.30 is a spectrum diagram of a red light emitting device according to some further embodiments;

[0057] Fig.31 is a spectrum diagram of a green light emitting device according to some further embodiments;

[0058] Fig.32 is a spectrum diagram of a blue light emitting device according to some further embodiments;

[0059] Fig.33 is a spectrum diagram of a red light emitting device according to some further embodiments;

[0060] Fig.34 is a spectrum diagram of a green light emitting device according to some further embodiments;

[0061] Fig.35is a spectrum diagram of a blue light emitting device according to some further embodiments;

[0062] Fig.36 is a spectrum diagram of a red light emitting device according to some further embodiments;

[0063] Fig.37 is a spectrum diagram of a green light emitting device according to some further embodiments;

[0064] Fig.38 is a spectrum diagram of a blue light emitting device according to some further embodiments;

[0065] Fig.39 is a spectrum diagram of a red light emitting device according to some further embodiments;

[0066] Fig.40 is a spectrum diagram of a green light emitting device according to some further embodiments;

[0067] Fig.41 is a spectrum diagram of a blue light emitting device according to some further embodiments;

[0068] Fig.42 is a spectrum diagram of a red light emitting device according to some further embodiments;

[0069] Fig.43 is a spectrum diagram of a green light emitting device according to some further embodiments;

[0070] Fig.44 is a spectrum diagram of a blue light emitting device according to some further embodiments;

[0071] Fig.45 is a spectrum diagram of a red light emitting device according to some further embodiments;

[0072] Fig.46 is a spectrum diagram of a green light emitting device according to some further embodiments;

[0073] Fig.47 is a spectrum diagram of a blue light emitting device according to some further embodiments;

[0074] Fig.48 is a spectrum diagram of a red light emitting device according to some further embodiments;

[0075] Fig.49 is a spectrum diagram of a green light emitting device according to some further embodiments;

[0076] Fig.50 is a spectrum diagram of a blue light emitting device according to some further embodiments;

[0077] Fig.51is a spectrum diagram of a red light emitting device according to some further embodiments;

[0078] Fig.52 is a spectrum diagram of a green light emitting device according to some further embodiments;

[0079] Fig.53 is a spectrum diagram of a blue light emitting device according to some further embodiments;

[0080] Fig.54 is a spectrum diagram of a red light emitting device according to some further embodiments;

[0081] Fig.55 is a spectrum diagram of a green light emitting device according to some further embodiments;

[0082] Fig.56 is a spectrum diagram of a blue light emitting device according to some further embodiments;

[0083] Fig.57 is a structural diagram of a display substrate according to some other embodiments;

[0084] Fig.58 is a spectrum diagram of a red light emitting device according to some further embodiments;

[0085] Fig.59 is a spectrum diagram of a green light emitting device according to some further embodiments;

[0086] Fig.60 is a spectrum diagram of a blue light emitting device according to some further embodiments;

[0087] Fig.61 is a spectrum diagram of a red light emitting device according to some further embodiments;

[0088] Fig.62 is a spectrum diagram of a green light emitting device according to some further embodiments;

[0089] Fig.63 is a spectrum diagram of a blue light emitting device according to some further embodiments;

[0090] Fig.64 is a structural diagram of a light emitting device according to some further embodiments;

[0091] Fig.65 1 is a structural diagram of a light emitting device according to some further embodiments. DETAILED DESCRIPTION

[0092] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present disclosure.

[0093] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and other forms thereof, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open, inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0094] In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0095] When describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. The term "connected" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. The term "coupled" indicates, for example, that two or more components are in direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0096] “At least one of A, B, and C” has the same meaning as “at least one of A, B, or C” and both include the following combinations of A, B, and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B, and C.

[0097] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0098] As used herein, the term "if" is optionally interpreted to mean "when" or "upon" or "in response to determining" or "in response to detecting," depending on the context. Similarly, the phrases "if it is determined that" or "if [a stated condition or event] is detected" are optionally interpreted to mean "upon determining that" or "in response to determining that" or "upon detecting [a stated condition or event]" or "in response to detecting [a stated condition or event]," depending on the context.

[0099] The use of "adapted to" or "configured to" herein is meant to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

[0100] Additionally, the use of “based on” is meant to be open and inclusive, as a process, step, calculation, or other action “based on” one or more stated conditions or values ​​may, in practice, be based on additional conditions or values ​​beyond those stated.

[0101] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of variation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0102] As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within the acceptable deviation range, wherein the acceptable deviation range is determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity can also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality can be, for example, the difference between the two equalities is less than or equal to 5% of either one.

[0103] It will be understood that when a layer or an element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present between the layer or element and the other layer or substrate.

[0104] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of the layers and the area of ​​the regions are exaggerated for clarity. Therefore, variations in the shapes relative to the drawings due to, for example, manufacturing techniques and / or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device, and are not intended to limit the scope of the exemplary embodiments.

[0105] Figure 1 is a structural diagram of a display device according to some embodiments. Figure 1 As shown, some embodiments of the present disclosure provide a display device 300 , which includes a display panel 200 .

[0106] Exemplarily, the display device 300 further includes a frame, a display driver IC (Integrated Circuit), and other electronic components.

[0107] In addition, the display device 300 may also include an under-screen camera and an under-screen fingerprint recognition sensor, so that the display device can realize a variety of different functions such as taking pictures, recording videos, fingerprint recognition or face recognition.

[0108] Exemplarily, the display device 300 may be an electroluminescent display device. For example, the display device 300 may be an organic light-emitting diode (OLED) or a quantum dot light-emitting diode (QLED).

[0109] When the display device 300 is an organic electroluminescent display device, the corresponding display panel 200 may be an organic electroluminescent display panel. Alternatively, when the display device 300 is a quantum dot electroluminescent display device, the corresponding display panel 200 may be a quantum dot electroluminescent display panel.

[0110] Exemplarily, the display device 300 can be any display device that displays images, whether in motion (e.g., video) or fixed (e.g., still images), and whether text or images. More specifically, it is expected that the display device of the embodiments described can be implemented in or associated with a variety of electronic devices, such as (but not limited to) mobile phones, wireless devices, personal data assistants (PDAs), handheld or portable computers, GPS receivers / navigators, cameras, MP4 video players, camcorders, game consoles, watches, clocks, calculators, television monitors, flat panel displays, computer monitors, automotive displays (e.g., odometer displays, etc.), navigators, cockpit controls and / or displays, displays of camera views (e.g., displays of rear-view cameras in vehicles), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., displays of images of a piece of jewelry), etc.

[0111] The following is an introduction using an OLED display device and its corresponding OLED display panel as an example:

[0112] Figure 2 is a structural diagram of a display panel according to some embodiments.

[0113] See also Figure 2 As shown, some embodiments of the present disclosure provide a display panel 200. The display panel 200 has a display area AA and a peripheral area SA. The peripheral area SA can be located on at least one side of the display area AA (for example, one side; for example, all around, i.e., including upper and lower sides and left and right sides).

[0114] The display panel 200 includes a plurality of sub-pixels P disposed in the display area AA. The display panel 200 may display a predetermined image in the display area AA through light emitted by the plurality of sub-pixels P. Specifically, the plurality of sub-pixels P may include a plurality of sub-pixels emitting different colors.

[0115] For the convenience of explanation, the above-mentioned multiple sub-pixels P are described in the present application by taking the matrix arrangement as an example. In this case, the sub-pixels P arranged in a row along the first direction X are called sub-pixels in the same row, and the sub-pixels P arranged in a row along the second direction Y are called sub-pixels in the same column.

[0116] The first direction X and the second direction Y intersect. Here, the first direction X and the second direction Y intersect each other. The angle between the first direction X and the second direction Y can be set according to actual needs. For example, the angle between the first direction X and the second direction Y can be 85°, 89° or 90°, etc.

[0117] Exemplarily, the plurality of sub-pixels P include a first sub-pixel P1, a second sub-pixel P2, and a third sub-pixel P3. The first sub-pixel P1, the second sub-pixel P2, and the third sub-pixel P3 emit three primary color lights respectively, for example, the first sub-pixel P1 may emit red light, the second sub-pixel P2 may emit green light, and the third sub-pixel P3 may emit blue light.

[0118] Figure 3 for Figure 2 Cross-sectional view along the B-B' direction.

[0119] Please combine Figure 2 and Figure 3 As shown, the display panel 200 further includes a plurality of film layers. The plurality of film layers in the display panel 200 are introduced below:

[0120] In some embodiments, the multiple film layers in the display panel 200 include a display substrate 100, and the display substrate 100 includes a plurality of light-emitting devices O. The plurality of light-emitting devices O in the display substrate 100 are used to emit light so that the display panel 200 can display a picture. The display panel 200 may be the display panel 200 in the display device 300 described above.

[0121] For example, the light emitting device O may be an organic light emitting diode (OLED) or a quantum dot light emitting diode (QLED). The following description will be made by taking the example that the light emitting device O may be an organic light emitting diode (OLED).

[0122] In some embodiments, the multiple film layers in the display panel 200 further include a substrate 210, and a pixel circuit layer 220 and a display substrate 100 located on the substrate. The display substrate 100 is located on a side of the pixel circuit layer 220 away from the substrate 210.

[0123] In some examples, the substrate 210 may be a flexible substrate. Exemplarily, the material of the substrate 210 may be an organic material. For example, the material of the substrate 210 may be any one of polyimide (full name in English: Polyimide, English abbreviation: PI), polycarbonate (full name in English: Polycarbonate, English abbreviation: PC) or polyvinyl chloride (full name in English: Polyvinyl Chloride, English abbreviation: PVC).

[0124] In some other examples, the substrate 210 may be a rigid substrate, for example, a glass substrate or a PMMA (Polymethyl methacrylate) substrate.

[0125] In some examples, the pixel circuit layer 220 includes a plurality of pixel driving circuits M, and the pixel driving circuit M includes a plurality of transistors. In some examples, the structure of the pixel driving circuit M in the present disclosure includes multiple structures, which can be selected and set according to actual needs. For example, the structure of the pixel driving circuit M may include "2T1C", "6T1C", "7T1C", "6T2C", "7T2C" or "8T1C", etc. Here, "T" represents a thin film transistor, and the number in front of "T" represents the number of thin film transistors; "C" represents a storage capacitor (Capacitance), and the number in front of "C" represents the number of storage capacitors C. The following is an introduction using the "7T1C" pixel driving circuit M as an example.

[0126] Among them, no matter what structure the pixel driving circuit M has, the pixel driving circuit M needs to be electrically connected to the light-emitting device O (the anode of the light-emitting device O) of the display substrate 100, so as to utilize the pixel driving circuit M in the pixel circuit layer 220 to control the light-emitting device O in the display substrate 100 to emit light, so that the display panel 200 can realize picture display.

[0127] In some examples, the plurality of pixel driving circuits M and the plurality of light emitting devices O in the display panel 200 may be electrically connected in a one-to-one correspondence. In other examples, one pixel driving circuit M may be electrically connected to a plurality of light emitting devices O, or a plurality of pixel driving circuits M may be electrically connected to one light emitting device O.

[0128] In the following, the present disclosure takes the electrical connection between a pixel driving circuit M and a light emitting device O as an example to introduce the structure of the display panel 200 .

[0129] Based on this, for a single sub-pixel P: a sub-pixel P may include a light-emitting device O located in the display substrate 100 and a pixel driving circuit M located in the pixel circuit layer 220 and electrically connected to the light-emitting device O.

[0130] The above describes the film structure of the display panel 200 in conjunction with the relevant drawings. The following describes the structure of the display substrate 100 in the display panel 200 in conjunction with the relevant drawings.

[0131] Please continue reading Figure 3 As shown, some embodiments of the present disclosure provide a display substrate 100. The display substrate 100 may be the above-mentioned display substrate.

[0132] The display substrate 100 includes a plurality of sub-pixels P arranged in a plurality of rows and columns. The sub-pixels P in the display substrate 100 correspond to the sub-pixels P in the display panel 200 , and will not be described in detail herein.

[0133] It should be noted that, since this embodiment mainly introduces the structure of the display substrate 100 , the pixel circuit layer is not involved at this time. That is, at this time, the sub-pixel P only includes the light-emitting device O in the display substrate 100 .

[0134] Figure 4 is a structural diagram of a light emitting device according to some embodiments.

[0135] See also Figure 4 As shown, with the continuous development of display technology, people's pursuit of display quality is getting higher and higher. In order to further reduce power consumption and achieve high brightness, the single-layer light-emitting layer in the light-emitting device O can be replaced with two light-emitting layers, and a charge generation layer (Charge Generation Layer, CGL) 30 is added between the two light-emitting layers to achieve a double-layer light-emitting (Tandem EL) design. Specifically, the two light-emitting layers (the first light-emitting unit 20 and the second light-emitting unit 40) are connected in series using the charge generation layer 30 to form a light-emitting device O with a double-layer light-emitting (Tandem EL) design.

[0136] However, the inventors of the present disclosure have discovered through research that, since the charge generation stack 30 has strong conductivity and the first light-emitting unit 20, the charge generation stack 30, and the second light-emitting unit 40 of adjacent sub-pixels P are all connected, the charge generation stack 30 easily causes crosstalk between two adjacent sub-pixels P, thereby seriously affecting the display quality.

[0137] Specifically, since the interval between the charge generation stacks 30 of two adjacent sub-pixels P in the direction of the connection is small, and the resistance of the charge generation stack 30 in the extension direction of the connection is also small, the carriers in the charge generation stack 30 are easily transferred from one of the two adjacent sub-pixels P to the other of the two adjacent sub-pixels P through the charge generation stack 30 along the extension direction of the connection. Therefore, the charge generation stack 30 easily causes crosstalk between the two adjacent sub-pixels P, resulting in the generation of color shift, thereby seriously affecting the display quality.

[0138] Since the crosstalk problem of the light emitting device O in the low grayscale state is more serious than the crosstalk problem of the light emitting device O in the high grayscale state, the grayscale of the light emitting device O in the display substrate 100 is a high grayscale state (for example, 255 grayscale) as an example for description:

[0139] Figure 5 is a spectrum diagram of a red light emitting device according to some possible implementations, Figure 6 is a spectrum diagram of a green light emitting device according to some possible implementations, Figure 7 Spectrum diagram of a blue light emitting device according to some possible implementations.

[0140] in, Figure 5 The light emitting device O shown may be a first light emitting device O1, and the first light emitting device O1 is located in the first sub-pixel P1. Figure 6 The light emitting device O shown may be a second light emitting device O2, and the second light emitting device O2 is located in the second sub-pixel P2. Figure 7 The light emitting device O shown may be a third light emitting device O3, and the third light emitting device O3 is located in the third sub-pixel P3.

[0141] Combination Figure 5 to Figure 7 As shown, it can be clearly observed that the spectrum of the double-layer light-emitting device (the light-emitting device O of the double-layer light-emitting (Tandem EL) design) that emits light of various colors has many miscellaneous peaks relative to the spectrum of the single-layer light-emitting device (including only one light-emitting unit). That is, since the charge generation stack 30 easily causes crosstalk between two adjacent sub-pixels P, when the display substrate 100 lights up the light-emitting device O of one color, crosstalk will cause the light-emitting devices O of two adjacent sub-pixels P to be mistakenly lit, and the existence of miscellaneous peaks emitting other colors will be clearly observed in the corresponding spectrum diagram. This will lead to insufficient color gamut of the light-emitting device O and impure colors, which will seriously affect the display quality.

[0142] In some achievable ways, Figure 8 is a spectrum diagram of a red light emitting device according to some other possible implementations, Fig. 9 is a spectrum diagram of a green light emitting device according to some other possible implementations, Fig.10 Spectrum diagram of a blue light emitting device according to some other possible implementations.

[0143] Combination Figure 8 to Figure 10 As shown, a spacer column may be provided in the charge generation stack 30 between two adjacent sub-pixels P. That is, the charge generation stack 30 between two adjacent sub-pixels P is disconnected, and a spacer column is provided at a position between the charge generation stack 30 between the two sub-pixels P. The spacer column is used to effectively prevent the carriers in the charge generation stack 30 between the two sub-pixels P from lateral crosstalk, reduce the mixed peaks of the spectrum diagram of each light-emitting device O, improve the color deviation problem of the display substrate 100, and improve the display quality.

[0144] However, the inventors of the present disclosure have found through research that although the isolation columns are provided in the display substrate 100, it can help to improve the problem of lateral crosstalk of carriers in the charge generation stack 30 in the light-emitting device O and improve the display quality. However, the additional isolation columns in the display substrate 100 will also cause corresponding problems. For example, the additional isolation columns require an additional drawing process in the process of the display substrate 100, which not only affects the working support of the display substrate 100, but also leads to the problem of increased cost. In addition, the additional isolation columns will also increase the resistance of the display substrate 100 and the power consumption of the light-emitting device O, which is not conducive to realizing a low-power display substrate 100.

[0145] Fig.11 is a spectrum diagram of a red light emitting device according to some embodiments, Fig.12 is a spectrum diagram of a green light emitting device according to some embodiments, Fig.13 is a spectrum diagram of a blue light emitting device according to some embodiments.

[0146] in, Figure 11 to Figure 13 The existing double-layer light-emitting device is the light-emitting device in the above-mentioned implementable manner, and the light-emitting device is the light-emitting device provided in some embodiments of the present disclosure, and is introduced by taking the grayscale of the light-emitting device O in the display substrate 100 as a high grayscale (for example, 255 grayscale) as an example.

[0147] Based on the above problems, some embodiments of the present disclosure disclose a display substrate 100, Figure 4 , Figure 11 to Figure 13 As shown, the display substrate 100 includes a plurality of sub-pixels P arranged in a plurality of rows and columns, and the sub-pixels P include light-emitting devices O. In the first direction X, the colors of the light emitted by the light-emitting devices O in two adjacent sub-pixels P are different, and the proportion of the impurity peak of the emission peak in the light emission spectrum corresponding to the light emitted by the light-emitting device O in any sub-pixel P is less than or equal to 5%.

[0148] The following will first introduce in detail the light-emitting device O of the double-layer light-emitting (Tandem EL) design:

[0149] See also Figure 4 As shown, the light-emitting device O includes a first electrode 10, a first light-emitting unit 20, a charge generation stack 30, a second light-emitting unit 40, and a second electrode 50 which are sequentially stacked. The first light-emitting unit 20 and the second light-emitting unit 40 are stacked, and the charge generation stack 30 is added between the first light-emitting unit 20 and the second light-emitting unit 40 as the second electrode corresponding to the first light-emitting unit 20 and the first electrode corresponding to the second light-emitting unit 40, so as to form a light-emitting device O with a double-layer light-emitting (Tandem EL) design.

[0150] Based on this, the first electrode 10, the first light-emitting unit 20 and the charge generation stack 30 can form an independent and complete light-emitting element, and the charge generation stack 30, the second light-emitting unit 40 and the second electrode 50 can form an independent and complete light-emitting element. That is, the stacked first electrode 10, the first light-emitting unit 20, the charge generation stack 30, the second light-emitting unit 40 and the second electrode 50 can form a light-emitting device O having two independent and complete light-emitting units.

[0151] One of the first electrode 10 and the second electrode 50 may be an anode of the light-emitting device O, and the other of the first electrode 10 and the second electrode 50 may be a cathode of the light-emitting device O.

[0152] The following description is made by taking the case where the first electrode 10 is the anode of the light emitting device O and the second electrode 50 is the cathode of the light emitting device O as an example:

[0153] In some examples, the first electrode 10 may be an anode of the light emitting device O, and the carriers provided by the first electrode 10 may be holes. The first electrode 10 may be made of a metal material, such as any one or more of magnesium (Mg), silver (Ag), copper (Cu), aluminum (Al), titanium (Ti) and molybdenum (Mo), or an alloy material of the above metals, such as aluminum-neodymium alloy (AlNd) or molybdenum-niobium alloy (MoNb), and may be a single-layer structure, or a multi-layer composite structure, such as Ti / Al / Ti, or a stack structure formed by a metal and a transparent conductive material, such as reflective materials such as ITO / Ag / ITO, Mo / AlNd / ITO, etc. However, the embodiments of the present disclosure are not limited thereto.

[0154] In some examples, the second electrode 50 is the cathode of the light emitting device O, and the carriers provided by the second electrode 50 may be electrons. The material of the second electrode 50, the second electrode 132 may be any one or more of magnesium (Mg), silver (Ag), and aluminum (Al), or an alloy made of any one or more of the above metals, or a transparent conductive material, such as indium tin oxide (ITO), or a multilayer composite structure of metal and transparent conductive material.

[0155] In other examples, the second electrode 50 is taken as a double-layer composite structure for introduction. The second electrode 50 includes a first metal layer and a second metal layer. The first metal layer can be located on the side of the second metal layer away from the first electrode 10. That is, the second metal layer is located on the side of the first metal layer close to the second light-emitting unit 40. Among them, the material of the first metal layer can include two metal materials, magnesium (Mg) and silver (Ag). The material of the second metal layer can be ytterbium (Yb). A second metal layer is provided on the side of the first metal layer close to the second light-emitting unit 40, and the second metal layer can be used to reduce the potential barrier between the first metal layer and the second light-emitting unit 40, so as to facilitate the transmission of electrons provided by the second electrode 50 to the second light-emitting unit 40.

[0156] Exemplarily, the ratio of the mass of magnesium (Mg) to the mass of silver (Ag) in the first metal layer ranges from 1:9 to 1:20.

[0157] Exemplarily, the thickness of the second electrode 50 ranges from

[0158] Exemplarily, the thickness of the first metal layer ranges from

[0159] Exemplarily, the thickness of the second metal layer ranges from

[0160] Based on this, the above-mentioned limitation on the material, thickness and other conditions of the metal layer in the second electrode 50 can make the second electrode 50 have better conductivity. However, the embodiments of the present disclosure are not limited thereto.

[0161] For a single light emitting device O: the first light emitting unit 20 and the second light emitting unit 40 emit the same color of light. For example, the light emitting device O emits red light: the first light emitting unit 20 and the second light emitting unit 40 in the light emitting device O both emit red light.

[0162] The charge generation stack 30 is configured to generate carriers, transport carriers, and inject carriers under the action of the electric field of the first electrode 10 and the second electrode 50. The carriers may include electrons and holes. Exemplarily, the charge generation stack 30 generates holes moving toward the direction close to the second electrode 50 and electrons moving toward the direction close to the first electrode 10 under the action of the electric field of the first electrode 10 and the second electrode 50.

[0163] For example, a voltage is applied to the first electrode 10 and the second electrode 50, and an electric field is formed between the first electrode 10 and the second electrode 50. Under the action of the electric field of the first electrode 10 and the second electrode 50, the first electrode 10 generates holes approaching the first light-emitting unit 20, the second electrode 50 generates electrons approaching the second light-emitting unit 40, and the electrons approaching the first light-emitting unit 20 and the holes approaching the second light-emitting unit 40 are generated through the charge generation stack 30.

[0164] Based on this, the electrons generated by the charge generation stack 30 and the holes generated by the first electrode 10 will move to the first light-emitting unit 20, and recombine into excitons in the first light-emitting unit 20, so that the first light-emitting unit 20 emits light. In addition, the holes generated by the charge generation stack 30 and the electrons generated by the second electrode 50 will move to the second light-emitting unit 40, and recombine into excitons in the second light-emitting unit 40, so that the second light-emitting unit 40 emits light. Thus, the light-emitting device O of the double-layer light-emitting (Tandem EL) design emits light.

[0165] Combination Figure 11 to Figure 13 As shown, in some examples, when the red light emitting device (R), the green light emitting device (G) and the blue light emitting device (B) in the display substrate 100 emit light, the spectrum corresponding to the RGB screen is tested, and it can be observed that the proportion of the stray peak of the emission peak in the emission spectrum corresponding to the light emitted by the light emitting device O in at least part of the sub-pixels P in the display substrate 100 is less than or equal to 5%. That is, when no isolation column is added to the display substrate 100, the proportion of the stray peak of the light emitted by the light emitting device O can be reduced by adjusting various parameters of the charge generation stack 30, so that the proportion of the stray peak of the emission peak in the emission spectrum corresponding to the light emitted by the light emitting device O in at least part of the sub-pixels P of the display substrate 100 is less than or equal to 5%.

[0166] Among them, the conditions for testing the red light-emitting device (R), the green light-emitting device (G) and the blue light-emitting device (B) in the display substrate 100 are consistent, and only the tested light-emitting device O is changed to facilitate the observation of the mixed peaks of the light-emitting device O that emits different light.

[0167] For example, the CS2000 device can be used for testing at room temperature to measure the spectrum of the red light emitting device (R), the green light emitting device (G) and the blue light emitting device (B) in the display substrate 100 corresponding to the RGB screen. However, the embodiments of the present disclosure are not limited thereto.

[0168] It should be noted that in the corresponding spectra when the red light-emitting device (R), the green light-emitting device (G) and the blue light-emitting device (B) emit light respectively, if there is no crosstalk, only one main peak will appear, and if there is crosstalk, other miscellaneous peaks will appear, that is, the "miscellaneous peak" is the crosstalk peak value other than the main peak in the spectrum. As for the proportion of miscellaneous peaks, it can be obtained by normalizing the main peak intensity. In addition, the "miscellaneous peak proportion" below is also obtained in the above manner.

[0169] When the proportion of the stray peak of the light emitted by the light emitting device O is equal to or close to 5%, the proportion of the stray peak of the light emitted by the light emitting device O is small. That is, when a light emitting device O of a single color emits light, the problem of crosstalk to adjacent light emitting devices O is reduced, which can help improve the color deviation problem of the display substrate 100 and improve the display quality of the display substrate 100.

[0170] When the proportion of the stray peak of the light emitted by the light emitting device O is equal to or close to 0%, the proportion of the stray peak of the light emitted by the light emitting device O can be ignored. That is, the problem of crosstalk to the adjacent light emitting device O when a light emitting device O of a single color emits light can be effectively reduced, thereby preventing the display substrate 100 from having a color shift problem, thereby improving the display quality of the display substrate 100.

[0171] In some examples, the proportion of the impurity peaks in the emission peaks in the light emission spectrum corresponding to the light emitted by the light emitting device O in at least some sub-pixels P of the display substrate 100 is less than or equal to 4%.

[0172] When the proportion of the stray peak of the light emitted by the light emitting device O is equal to or close to 4%, the proportion of the stray peak of the light emitted by the light emitting device O can be made smaller. That is, the problem of crosstalk to the adjacent light emitting device O when a light emitting device O of a single color emits light can be better reduced. Thus, the problem of color deviation of the display substrate 100 is better reduced, so as to improve the display quality of the display substrate 100.

[0173] Exemplarily, the impurity peak of the emission peak in the luminescence spectrum corresponding to the light emitted by the light-emitting device O in at least some sub-pixels P accounts for approximately any one of 0%, 0.5%, 1%, 1.5%, 2%, 2.5%, 3%, 3.5% or 4%.

[0174] It should be noted that “at least some sub-pixels P” may include the following situations:

[0175] The first type is that the proportion of the impurity peak of the emission peak in the luminescence spectrum corresponding to the light emitted by some sub-pixels P is less than or equal to 5%. Among them, "some sub-pixels P" are provided with at least one of a sub-pixel P with a light-emitting device that emits red light, a sub-pixel P with a light-emitting device that emits green light, and a sub-pixel P with a light-emitting device that emits blue light.

[0176] The second type is that the proportion of the impurity peaks in the emission peaks in the emission spectrum corresponding to the light emitted by all sub-pixels P is less than or equal to 5%. That is, the proportion of the impurity peaks in the emission peaks in the emission spectrum corresponding to the light emitted by the light-emitting device O in any sub-pixel P in the display substrate 100 is less than or equal to 5%.

[0177] Based on this, the problem of crosstalk to adjacent light emitting devices O when a light emitting device O of a single color emits light can be effectively reduced, thereby preventing the display substrate 100 from having color deviation and improving the display quality of the display substrate 100.

[0178] Specific, combined Figure 8 and Fig.11 As shown, combined Fig. 9 and Fig.12 As shown, or combined Fig.10 and Fig.13 As shown in any combination of the above, the display substrate 100 provided by the embodiment of the present disclosure is provided with a ratio of the stray peak of the light emitted by the light-emitting device O being less than or equal to 5%. That is, a technical effect similar to that of providing an isolation column can be achieved without providing an isolation column. When a light-emitting device O of a single color emits light, the crosstalk to the adjacent light-emitting device O can be reduced, the color deviation problem of the display substrate 100 can be improved, and the display quality of the display substrate 100 can be improved.

[0179] In summary, the display substrate 100 provided in the embodiment of the present disclosure can set the proportion of the noise peak of the light emitted by the light-emitting device O to be less than or equal to 5% without increasing the process flow and cost, thereby reducing the crosstalk to the adjacent light-emitting devices O when a light-emitting device O of a single color emits light, improving the color deviation problem of the display substrate 100, and improving the display quality of the display substrate 100.

[0180] In some embodiments, the combination Figure 4 , Figure 11 to Figure 13 As shown, when the grayscale of the light-emitting device O in the sub-pixel P is higher than the threshold grayscale, the proportion of the impurity peak of the emission peak in the luminescence spectrum corresponding to the light emitted by the light-emitting device O in at least part of the sub-pixels P is approximately 0%.

[0181] In some examples, the threshold grayscale may be grayscale 128. Exemplarily, grayscale 0 to grayscale 128 are low grayscales, and grayscale 129 to grayscale 255 are high grayscales. However, the embodiments of the present disclosure are not limited thereto. The following description takes the threshold grayscale of 128 as an example.

[0182] When the grayscale of the light emitting device O in the sub-pixel P is higher than the threshold grayscale, the light emitting device O in the sub-pixel P is in a high grayscale state.

[0183] Taking 255 grayscale as an example, the brightness of the first sub-pixel P1 (red) can be 300 Lum. / nit, the brightness of the second sub-pixel P2 (green) can be 1000 Lum. / nit, and the brightness of the third sub-pixel P3 (blue) can be 100 Lum. / nit. In this article, 255 grayscale is introduced by taking the above brightness as an example.

[0184] Among the light-emitting device O in the first sub-pixel P1 (red), the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue), the light-emitting device O in one sub-pixel P is affected by the light-emitting devices O in the other two sub-pixels P and the proportion of the noise peak generated is approximately 0%.

[0185] Based on this, when the grayscale of the display substrate 100 is higher than the threshold grayscale, that is, the display substrate 100 is in a high grayscale state, the proportion of stray peaks in the emission peak in the luminescence spectrum corresponding to the light emitted by the light-emitting device O in at least some of the sub-pixels P is approximately 0%, which is equivalent to removing the stray light of the light emitted by the light-emitting device O in at least some of the sub-pixels P, which can effectively improve the color deviation problem of the display substrate 100 to improve the display quality of the display substrate 100.

[0186] It should be noted that, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the impurity peak ratio fluctuates within the range of ±0.5%, it can also be considered that the impurity peak ratio meets the limiting condition of being equal to 0%. In addition, in other examples, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the impurity peak ratio fluctuates within the range of ±0.3%, it can also be considered that the impurity peak ratio meets the limiting condition of being equal to 0%.

[0187] In some embodiments, the combination Figure 4 , Figure 11 to Figure 13 As shown, when the grayscale of the light-emitting device O in the sub-pixel P is lower than the threshold grayscale, the proportion of the impurity peak of the emission peak in the luminescence spectrum corresponding to the light emitted by the light-emitting device O in at least part of the sub-pixels P is less than or equal to 4%.

[0188] When the grayscale of the light-emitting device O in the sub-pixel P is lower than the threshold grayscale, the light-emitting device O in the sub-pixel P is in a low grayscale state.

[0189] Taking 8 grayscale as an example, the brightness of the first sub-pixel P1 (red) can be 0.1 Lum. / nit, the brightness of the second sub-pixel P2 (green) can be 0.4 Lum. / nit, and the brightness of the third sub-pixel P3 (blue) can be 0.06 Lum. / nit. In this article, 8 grayscales are introduced by taking the above brightness as an example.

[0190] Among the light-emitting device O in the first sub-pixel P1 (red), the light-emitting device O in the second sub-pixel P2 (green), and the light-emitting device O in the third sub-pixel P3 (blue):

[0191] The proportion of the noise peak generated by the light emitting device O in the first sub-pixel P1 (red) being affected by the light emitting device O in the second sub-pixel P2 (green) and the light emitting device O in the third sub-pixel P3 (blue) is approximately 0%.

[0192] The proportion of the noise peak generated by the light emitting device O in the second sub-pixel P2 (green) affected by the light emitting device O in the first sub-pixel P1 (red) and the light emitting device O in the third sub-pixel P3 (blue) is approximately 0%.

[0193] The proportion of the impurity peaks generated by the light-emitting device O in the third sub-pixel P3 (blue) being affected by the light-emitting device O in the first sub-pixel P1 (red) is less than or equal to 4%. The proportion of the impurity peaks generated by the light-emitting device O in the third sub-pixel P3 (blue) being affected by the light-emitting device O in the second sub-pixel P2 (green) is less than or equal to 3%.

[0194] Based on this, when the grayscale of the display substrate 100 is lower than the threshold grayscale, that is, when the display substrate 100 is in a low grayscale state, the proportion of the stray peaks of the emission peaks in the light spectrum corresponding to the light emitted by the light emitting device O in at least part of the sub-pixels P is less than or equal to 4%, and the proportion of the stray peaks of the light emitted by the light emitting device O is small. This reduces the problem of crosstalk to the adjacent light emitting device O when a light emitting device O of a single color emits light, thereby helping to improve the color deviation problem of the display substrate 100 and improve the display quality of the display substrate 100.

[0195] The following will introduce, in conjunction with the relevant drawings, which parameters of the charge generation stack 30 are adjusted to reduce the proportion of the stray peak of the light emitted by the light-emitting device O and improve the color shift problem of the display substrate 100.

[0196] In some embodiments, in combination Figure 4 , Figure 11 to Figure 13 As shown, the lateral resistance of the charge generation stack 30 is greater than or equal to 100 GΩ / μm 2 The holes and electrons in the charge generation stack 30 can be effectively suppressed from being lateral transferred to the adjacent light-emitting device O, so that the proportion of the impurity peak in the emission peak corresponding to the light emission spectrum of the light emitted by the light-emitting device O is less than or equal to 5%, which is beneficial to improve the color deviation problem of the display substrate 100, so as to improve the display quality of the display substrate 100.

[0197] When the lateral resistance of the charge generation stack 30 is equal to or close to 100 GΩ / μm 2When the charge generation stack 30 has a large lateral resistance, it can effectively suppress the lateral transmission of holes and electrons in the charge generation stack 30 to the adjacent light-emitting device O, thereby preventing the problem of color crosstalk between adjacent light-emitting devices O in the display substrate 100 and improving the color deviation of the display substrate 100.

[0198] In some examples, the lateral resistance of the charge generation stack 30 is greater than or equal to 120 GΩ / μm. 2 When the lateral resistance of the charge generation stack 30 is equal to or close to 120 GΩ / μm 2 When the charge generation stack 30 is connected to the display substrate 100, the lateral resistance of the charge generation stack 30 can be made larger, which can better suppress the lateral transmission of holes and electrons in the charge generation stack 30 to the adjacent light-emitting device O, thereby better improving the problem of color crosstalk between adjacent light-emitting devices O, improving the color deviation of the display substrate 100, and improving the display quality of the display substrate 100.

[0199] It is understood that in some other examples, the lateral resistance of the charge generation stack 30 is greater than or equal to 150 GΩ / μm. 2 Alternatively, in some other embodiments, the lateral resistance of the charge generation stack 30 is greater than or equal to 200 GΩ / μm. 2 However, the present disclosure does not limit this. Since the greater the lateral resistance of the charge generation stack 30, the better the suppression effect on the lateral transmission of holes and electrons in the charge generation stack 30, based on this, the greater the lateral resistance of the charge generation stack 30, the more obvious the effect of improving the color deviation of the display substrate 100.

[0200] Exemplarily, the above-mentioned "transverse resistance of the charge generation stack 30" can be obtained in the following manner: using IVL equipment, testing the IV curve between the two electrodes (the first electrode 10 and the second electrode 50) at a distance of 10 μm to 100 μm, and then calculating the transverse resistance (voltage divided by current). And, the "transverse resistance" hereinafter is obtained in the above manner. However, the test method for the transverse resistance of the charge generation stack 30 in the disclosed embodiment is not limited thereto.

[0201] In some embodiments, in combination Figure 4 , Figure 11 to Figure 13 As shown, the lateral resistance of the charge generation stack 30 is less than or equal to 260 GΩ / μm 2 .

[0202] The material, doping and other conditions of the charge generation stack 30 need to be adjusted. The lateral resistance of the charge generation stack 30 is relatively large, but this will also affect other characteristics of the charge generation stack 30 and even affect the life of the formed light-emitting device O. Based on this, it is necessary to limit the lateral resistance value of the charge generation stack 30 to be less than or equal to 260GΩ / μm.2 To prevent the charge generation stack 30 from affecting the life of the light emitting device O and affecting the quality of the display substrate 100.

[0203] When the lateral resistance of the charge generation stack 30 is equal to or close to 260 GΩ / μm 2 When the charge generation stack 30 is formed, the lateral resistance of the charge generation stack 30 can be made larger without affecting the life and performance of the finally formed light emitting device O. The lateral resistance of the charge generation stack 30 can be used to suppress the lateral transmission of holes and electrons in the charge generation stack 30 to the adjacent light emitting device O, thereby improving the problem of color crosstalk between adjacent light emitting devices O, improving the color deviation of the display substrate 100, and improving the display quality of the display substrate 100.

[0204] In some examples, the lateral resistance of the charge generation stack 30 is less than or equal to 230 GΩ / μm. 2 When the lateral resistance value of the charge generation stack 30 is equal to or close to 230GΩ / μm 2 When the charge generation stack 30 is formed, the lateral resistance value can be made smaller, thereby further preventing the problem of affecting the life of the formed light-emitting device O.

[0205] It is understood that in some other examples, the lateral resistance of the charge generation stack 30 is less than or equal to 210 GΩ / μm. 2 However, the embodiments of the present disclosure are not limited thereto.

[0206] In some embodiments, in combination Figure 4 , Figure 11 to Figure 13 As shown, the lateral resistance value of the charge generation stack 30 ranges from 100 GΩ / μm 2 ~260GΩ / μm 2 The lateral resistance of the charge generation stack 30 can effectively inhibit the lateral transmission of holes and electrons in the charge generation stack 30 to the adjacent light-emitting device O, thereby better improving the color deviation problem of the display substrate 100, and can also prevent the required lateral resistance of the charge generation stack 30 from being too large, thereby affecting the life of the formed light-emitting device O.

[0207] In other examples, the lateral resistance of the charge generation stack 30 ranges from 124 GΩ / μm. 2 ~254GΩ / μm 2 In some other examples, the lateral resistance of the charge generation stack 30 ranges from 113 GΩ / μm 2 ~231GΩ / μm 2 However, the embodiments of the present disclosure are not limited thereto.

[0208] For example, the lateral resistance of the charge generation stack 30 is about 100 GΩ / μm. 2 、150GΩ / μm 2 , 200GΩ / μm 2 、250GΩ / μm 2 or 260GΩ / μm 2 However, the embodiments of the present disclosure are not limited thereto.

[0209] It should be noted that the lateral resistance value of the charge generation stack 30 is about 260 GΩ / μm. 2 For example, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), the error floating range of the lateral resistance value of the charge generation stack 30 is 10%×260GΩ / μm. 2 When the lateral resistance value of the charge generation stack 30 is floating within the range of 260GΩ / μm, it can also be considered that the lateral resistance value of the charge generation stack 30 satisfies 260GΩ / μm. 2 .

[0210] In addition, in other examples, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), the error floating range of the lateral resistance value of the charge generation stack 30 is 5%×260GΩ / μm. 2 When the lateral resistance value of the charge generation stack 30 is floating within the range of 260GΩ / μm, it can also be considered that the lateral resistance value of the charge generation stack 30 satisfies 260GΩ / μm. 2 .

[0211] Fig.14 1 is a structural diagram of a light emitting device according to some other embodiments.

[0212] In some embodiments, see Fig.14 As shown, the charge generation stack 30 includes an n-type charge generation layer 31 and a p-type charge generation layer 32, and the p-type charge generation layer 32 is located on a side of the n-type charge generation layer 31 away from the first electrode 10. The charge generation stack 30 is configured such that the n-type charge generation layer 31 transfers electrons to the first light-emitting unit 20, and the p-type charge generation layer 32 transfers holes to the second light-emitting unit 40.

[0213] The n-type charge generation layer 31 and the p-type charge generation layer 32 can form a PN junction, and a space charge region is formed at the interface between the n-type charge generation layer 31 and the p-type charge generation layer 32 to generate holes and electrons, thereby cooperating with the first electrode 10 and the second electrode 50 to make the light-emitting device O emit light.

[0214] In some examples, the n-type charge generation layer 31 includes a first n-type charge generation layer and a second n-type charge generation layer, wherein the lateral resistance of the first n-type charge generation layer is greater than the lateral resistance of the second n-type charge generation layer.

[0215] When the n-type charge generation layer 31 is the first n-type charge generation layer, the charge generation layer 31 formed by the first n-type charge generation layer and the p-type charge generation layer can make the lateral resistance value of the charge generation stack 30 range from 100 GΩ / μm. 2 ~260GΩ / μm 2 The charge generation stack 30 can effectively inhibit the holes and electrons in the charge generation stack 30 from being horizontally transmitted to the adjacent light emitting device O, thereby improving the color deviation problem of the display substrate 100 and preventing the life of the light emitting device O from being affected.

[0216] In some examples, the n-type charge generation layer 31 includes a first n-type charge generation layer and a second n-type charge generation layer. The lateral resistance of the first n-type charge generation layer is greater than the lateral resistance of the second n-type charge generation layer. The p-type charge generation layer 32 includes a first p-type charge generation layer and a second p-type charge generation layer. The lateral resistance of the first p-type charge generation layer is greater than the lateral resistance of the second p-type charge generation layer.

[0217] For example, when the n-type charge generation layer 31 is a first n-type charge generation layer and the p-type charge generation layer 32 is a first p-type charge generation layer, the lateral resistance value of the charge generation stack 30 can be in the range of 124 GΩ / μm. 2 ~254GΩ / μm 2 .

[0218] For example, when the n-type charge generation layer 31 is a first n-type charge generation layer and the p-type charge generation layer 32 is a second p-type charge generation layer, the lateral resistance value of the charge generation stack 30 can be in the range of 113 GΩ / μm. 2 ~231GΩ / μm 2 .

[0219] Exemplarily, when the n-type charge generation layer 31 is the second n-type charge generation layer, regardless of whether the p-type charge generation layer 32 is the first p-type charge generation layer or the second p-type charge generation layer, the lateral resistance value of the charge generation stack 30 formed by the combination thereof is in the range of 50 GΩ / μm. 2 ~130GΩ / μm 2 .

[0220] For example, when the n-type charge generation layer 31 is the second n-type charge generation layer and the p-type charge generation layer 32 is the first p-type charge generation layer, the lateral resistance value of the charge generation stack 30 can be in the range of 60 GΩ / μm. 2 127 GΩ / μm 2 .

[0221] For example, when the n-type charge generation layer 31 is a second n-type charge generation layer and the p-type charge generation layer 32 is a second p-type charge generation layer, the lateral resistance value of the charge generation stack 30 can be in the range of 56 GΩ / μm. 2 ~116GΩ / μm 2 .

[0222] It should be noted that in the embodiments of the present disclosure, there is no specific limitation on the material of the n-type charge generation layer 31 and the material of the p-type charge generation layer 32. The lateral resistance value of the charge generation stack 30 formed thereon may be modified and adjusted according to actual needs to satisfy the limitation on the lateral resistance value of the charge generation stack 30 in any of the above embodiments.

[0223] Based on the above statements, it can be seen that Figure 11 to Figure 14 As shown, when the n-type charge generation layer 31 is made of a material with a larger lateral resistance, whether the p-type charge generation layer 32 is made of a material with a larger lateral resistance or a material with a smaller lateral resistance, the lateral resistance of the charge generation layer formed by the n-type charge generation layer 31 and the p-type charge generation layer 32 can be satisfied with 100 GΩ / μm. 2 ~260GΩ / μm 2 The charge generation stack 30 can effectively inhibit the holes and electrons in the charge generation stack 30 from being horizontally transmitted to the adjacent light emitting device O, so that the proportion of the stray peak of the light emitted by the light emitting device O is less than or equal to 4%. This can improve the color deviation problem of the display substrate 100 and prevent the life of the light emitting device O from being affected.

[0224] When the n-type charge generation layer 31 is made of a material with a relatively small transverse resistance, the p-type charge generation layer 32 can be made of a material with a relatively large transverse resistance or a relatively small transverse resistance. The transverse resistance of the charge generation stack 30 formed by the n-type charge generation layer 31 and the p-type charge generation layer 32 is in the range of 50 GΩ / μm. 2 ~130GΩ / μm 2 This will result in the lateral resistance value of the charge generation stack 30 not being completely within a good value range (100GΩ / μm 2 ~260GΩ / μm 2 ) can suppress the lateral transmission of holes and electrons in the charge generation stack 30 to a certain extent, but it does not completely improve the color deviation problem of the display substrate 100.

[0225] In order to further improve the color shift problem of the display substrate 100, other parameters of the charge generation stack 30 may be further adjusted to achieve better improvement of the color shift problem of the display substrate 100. First, the thickness of the charge generation layer may be improved.

[0226] Since the n-type charge generation layer 31 is close to one side of the p-type charge generation layer 32, that is, the n-type charge generation layer 31 in the first electrode 10, the first light-emitting unit 20, and the charge generation stack 30 can form an independent light-emitting element. Among them, the n-type charge generation layer 31 is used to generate electrons moving toward the first light-emitting unit 20, and the first electrode is used to generate holes moving toward the first light-emitting unit 20.

[0227] Research has found that the rate of hole movement is higher than that of electron movement, which can lead to the accumulation of faster moving holes and cause lateral movement problems.

[0228] Based on the above problems, in some embodiments, please refer to Fig.14 As shown, the minimum distance between the side of the n-type charge generation layer 31 close to the p-type charge generation layer 32 and the first light-emitting unit 20 can be set to be smaller than the minimum distance between the side of the first electrode 10 away from the first light-emitting unit 20 and the first light-emitting unit 20.

[0229] That is, the transmission path of the electrons generated in the n-type charge generation layer 31 is set to be shorter than the transmission path of the electrons generated in the first electrode 10. The electron transmission path can be shortened to compensate for the fact that the movement speed of electrons is slower than that of holes.

[0230] Based on this, the electrons generated by the n-type charge generation layer 31 and the holes generated by the first electrode 10 can be timely recombined in the first light-emitting unit 20 to form excitons, so as to prevent the problem of lateral crosstalk caused by hole accumulation, which is beneficial to improving the display quality of the display substrate 100.

[0231] In some embodiments, see Fig.14 As shown, the thickness of the n-type charge generation layer 31 in the charge generation stack 30 ranges from

[0232] The thickness of the n-type charge generation layer 31 is equal to or When the transmission path of the electrons generated in the n-type charge generation layer 31 is shorter, the time required for the electrons generated in the n-type charge generation layer 31 to be transmitted to the first light-emitting unit 20 can be shortened to compensate for the fact that the electron mobility is lower than the hole mobility. The electrons generated in the n-type charge generation layer 31 and the holes generated in the first electrode 10 can be recombined in time in the first light-emitting unit 20 to form excitons, thereby preventing the problem of lateral crosstalk caused by hole accumulation, which is beneficial to improving the display quality of the display substrate 100. In addition, the value of the thickness of the n-type charge generation layer 31 is equal to or greater than When the thickness of the n-type charge generation layer 31 is too thin, the problem of affecting the cavity effect of the light-emitting device O can also be prevented.

[0233] The thickness of the n-type charge generation layer 31 is equal to or When the thickness of the n-type charge generation layer 31 is too thin, which may affect the cavity effect of the light-emitting device O, the transmission path of the electrons generated in the n-type charge generation layer 31 may be shortened to prevent the accumulation of holes and cause lateral crosstalk.

[0234] Fig.15 is a spectrum diagram of a red light emitting device according to some other embodiments, Fig.16 is a spectrum diagram of a green light emitting device according to some other embodiments, Fig.17 Spectrum diagram of blue light emitting devices according to other embodiments. Figure 15 to Figure 17 The following description will be made by taking the grayscale of the light emitting device O in the display substrate 100 as a high grayscale (eg, 255 grayscales) and the n-type charge generation layer 31 as a second n-type charge generation layer as an example.

[0235] In some examples, combined Figure 4 , Figure 15 to Figure 17 As shown, when the n-type charge generation layer 31 is the second n-type charge generation layer, the improvement effect on the color deviation of the display substrate 100 is not as good as when the n-type charge generation layer 31 is the first n-type charge generation layer. Based on this, firstly, the n-type charge generation layer 31 is the second n-type charge generation layer as an example for introduction. On this basis, the thickness of the second n-type charge generation layer is adjusted to conduct experiments. Specifically, the thickness of the second n-type charge generation layer is respectively shown as follows: and Spectrum diagram of the case.

[0236] Combination Figure 15 to Figure 17 As shown, it can be known that the thickness of the second n-type charge generation layer ranges from In this way, the proportion of the stray peaks of the light emitted by the light emitting device O can be reduced, and the color deviation problem of the display substrate 100 can be improved. Figure 15 to Figure 17 As shown, no matter what color light is emitted, the smaller the thickness of the second n-type charge generation layer in the light-emitting device O is, the smaller the proportion of the impurity peak of the light emitted by the light-emitting device O is, that is, the better the effect of improving the color deviation of the display substrate 100 is.

[0237] Fig.18 is a spectrum diagram of a red light emitting device according to some further embodiments, Fig.19 is a spectrum diagram of a green light emitting device according to some further embodiments, Fig. 20 Spectrum diagram of blue light emitting devices according to some other embodiments. Figure 15 to Figure 17 The following description is made by taking the grayscale of the light emitting device O in the display substrate 100 as a high grayscale (eg, 255 grayscales) and the n-type charge generation layer 31 as a first n-type charge generation layer as an example.

[0238] In other examples, combined with Figure 4 , Figure 18 to Figure 20 The spectrum shown is Figure 15 to Figure 17 The difference between the spectrum diagrams shown is that the n-type charge generation layer 31 in the light emitting device O is a first n-type charge generation layer.

[0239] Combination Figures 18 to 20 The spectra shown, and Figure 15 to Figure 17 From the spectrum diagram shown, first of all, it can be clearly seen that when the n-type charge generation layer 31 in the light-emitting device O is the first n-type charge generation layer, the proportion of the stray peaks of the light emitted by the light-emitting device O is smaller than that when the n-type charge generation layer 31 in the light-emitting device O is the second n-type charge generation layer, and the effect of improving the color deviation of the display substrate 100 is better.

[0240] Secondly, combined Figures 18 to 20 In the spectrum diagram shown, on the basis that the n-type charge generation layer 31 in the light-emitting device O is the first n-type charge generation layer, the thickness of the first n-type charge generation layer is adjusted to verify the influence of the first n-type charge generation layer with different thicknesses on the mixed peak of the light emitted by the light-emitting device O. Specifically, the thickness of the n-type charge generation layer is respectively and

[0241] Combination Figure 18 to Figure 20 As shown, it can be known that the thickness of the first n-type charge generation layer ranges from The ratio of the stray peaks of the light emitted by the light emitting device O can be reduced, and the color deviation problem of the display substrate 100 can be improved.

[0242] Specific, combined Fig.18 As shown, the proportion of the noise peak generated by the light-emitting device O in the first sub-pixel P1 (red) being affected by the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%.

[0243] Combination Fig.19 As shown, the proportion of the noise peak generated by the light-emitting device O in the second sub-pixel P2 (green) being affected by the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%.

[0244] Combination Fig. 20 As shown, the proportion of the noise peak generated by the light-emitting device O in the third sub-pixel P3 (blue) affected by the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the second sub-pixel P2 (green) is approximately 0%.

[0245] In summary, among the light-emitting device O in the first sub-pixel P1 (red), the light-emitting device O in the second sub-pixel P2 (green), and the light-emitting device O in the third sub-pixel P3 (blue), the proportion of the stray peaks generated by the light-emitting device O in one sub-pixel P affected by the light-emitting devices O in the other two sub-pixels P is approximately 0%. That is, no matter what color of light is emitted, the smaller the thickness of the first n-type charge generation layer in the light-emitting device O is, the smaller the proportion of the stray peaks of the light emitted by the light-emitting device O can be, that is, the better the effect of improving the color deviation of the display substrate 100 is.

[0246] Fig.21 is a spectrum diagram of a red light emitting device according to some further embodiments, Fig. 22 is a spectrum diagram of a green light emitting device according to some further embodiments, Fig.23 Spectrum diagram of blue light emitting devices according to some further embodiments. Figure 21 to Figure 23 The spectrum shown is Figures 18 to 20 The differences between the spectra shown are:

[0247] Since the color shift phenomenon of the display substrate 100 in the low grayscale state is more obvious than that in the high grayscale state. Figure 18 to Figure 20 On the basis of the above, the experiment is conducted by only changing the grayscale of the light emitting device O. Specifically, the grayscale of the light emitting device O in the display substrate 100 is low grayscale (for example, grayscale 8) as an example for description.

[0248] Combination Figure 21 to Figure 23 As shown in FIG. 1 , it can be seen that in the low grayscale state, the thickness of the first n-type charge generation layer ranges from The ratio of the stray peaks in the light emitted by the light emitting device O can be reduced, thereby improving the color deviation problem of the display substrate 100.

[0249] Specific, combined Fig.21 As shown, the proportion of the noise peak generated by the light-emitting device O in the first sub-pixel P1 (red) being affected by the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%.

[0250] Combination Fig. 22 As shown, the proportion of the noise peak generated by the light-emitting device O in the second sub-pixel P2 (green) being affected by the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%.

[0251] Combination Fig.23 As shown, the proportion of the impurity peak generated by the light-emitting device O in the third sub-pixel P3 (blue) being affected by the light-emitting device O in the first sub-pixel P1 (red) is less than or equal to 3%. The proportion of the impurity peak generated by the light-emitting device O in the third sub-pixel P3 (blue) being affected by the light-emitting device O in the second sub-pixel P2 (green) is less than or equal to 2.5%.

[0252] In summary, in the low grayscale state, the stray peaks of the light emitting device O emitting red light and the light emitting device O emitting green light are basically removed, while the light emitting device O emitting blue light still has a certain degree of stray peaks. However, the proportion of stray peaks of the light emitted by the light emitting device O emitting blue light can be made less than 4%, and the color deviation problem of the display substrate 100 can also be improved.

[0253] Furthermore, the thickness of the first n-type charge generation layer is in the range of No matter what color light is emitted, the smaller the thickness of the first n-type charge generation layer in the light-emitting device O is, the smaller the proportion of the impurity peak of the light emitted by the light-emitting device O is, that is, the better the effect of improving the color deviation of the display substrate 100 is.

[0254] in, Fig.23 The light emitting device O emitting blue light is particularly obvious, and the thickness of the first n-type charge generation layer can be further adjusted to further improve the color shift improvement effect of the display substrate 100.

[0255] Combined with the following table 1, Figure 18 to Figure 23 As shown, it can also be known that under 255 grayscale and 8 grayscale, the differences in color coordinates of n-type charge generation layers with different thicknesses are relatively small, which can be beneficial to improving the color deviation improvement effect of the display substrate 100.

[0256] Table 1 shows the difference in color coordinates at different thicknesses of the n-type charge generation layer at 255 grayscale and 8 grayscale.

[0257]

[0258] The red light emitting device O and the green light emitting device O are both differences on the X axis (the X coordinate axis in the color coordinate), and the blue light emitting device O is the difference on the Y axis (the Y coordinate axis in the color coordinate).

[0259] In some embodiments, in combination Figure 14 to Figure 23 As shown, the thickness of the n-type charge generation layer 31 in the charge generation stack 30 ranges from

[0260] The thickness of the n-type charge generation layer 31 is equal to or When the transmission path of the electrons generated in the n-type charge generation layer 31 is shorter, the time required for the electrons generated in the n-type charge generation layer 31 to be transmitted to the first light-emitting unit 20 can be shortened to compensate for the fact that the electron mobility is lower than the hole mobility. The electrons generated in the n-type charge generation layer 31 and the holes generated in the first electrode 10 can be recombined in time in the first light-emitting unit 20 to form excitons, thereby preventing the problem of lateral crosstalk caused by hole accumulation, which is beneficial to improving the display quality of the display substrate 100. In addition, the value of the thickness of the n-type charge generation layer 31 is equal to or greater than When the thickness of the n-type charge generation layer 31 is too thin, the problem of affecting the cavity effect of the light-emitting device O can also be prevented.

[0261] The thickness of the n-type charge generation layer 31 is equal to or When the thickness of the n-type charge generation layer 31 is too thin, the problem of the cavity effect of the light-emitting device O may be better prevented, and the transmission path of the electrons generated in the n-type charge generation layer 31 may be shortened to prevent the accumulation of holes and cause lateral crosstalk.

[0262] In some embodiments, in combination Figure 14 to Figure 23 As shown, the thickness of the n-type charge generation layer 31 is approximately It can make the thickness of the n-type charge generation layer 31 thinner and shorten the transmission path of the electrons generated in the n-type charge generation layer 31 to prevent the problem of lateral crosstalk caused by hole accumulation; it can also prevent the thickness of the n-type charge generation layer 31 from being too thin, which will affect the cavity effect of the light-emitting device O.

[0263] It is understood that in some other embodiments, the thickness of the n-type charge generation layer 31 is approximately or The embodiments of the present disclosure are not limited thereto.

[0264] It should be noted that the thickness of the n-type charge generation layer 31 is about Taking the example of FIG. 1 as an example, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), the thickness error of the n-type charge generation layer 31 fluctuates within a range of When the thickness of the n-type charge generation layer 31 is equal to

[0265] In addition, in other examples, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), the thickness error of the n-type charge generation layer 31 fluctuates within a range of When the thickness of the n-type charge generation layer 31 is equal to

[0266] The above text, in conjunction with the relevant drawings, first introduces that the “other parameters” may include the thickness of the n-type charge generation layer in the charge generation stack 30, so as to adjust the thickness of the n-type charge generation layer and improve the color shift effect of the display substrate 100. The following text mainly introduces that the “other parameters” may also include the doping concentration of the charge generation layer, and specifically introduces how to improve the doping concentration of the charge generation layer to improve the color shift effect of the display substrate 100.

[0267] In some embodiments, in combination Fig.14 As shown, the n-type charge generation layer 31 in the charge generation stack 30 in the light-emitting device O is doped with the first impurity. Doping the first impurity in the n-type charge generation layer 31 can help improve the electron mobility in the n-type charge generation layer 31, so that the n-type charge generation layer 31 and the p-type charge generation layer 32 form a PN junction (charge generation stack 30). The charge generation stack 30 formed based on this can better generate electrons moving toward the first light-emitting unit 20 and holes moving toward the second light-emitting unit 40.

[0268] In some examples, the first impurity may be ytterbium (Yb). However, the present disclosure is not limited thereto.

[0269] In some examples, the doping concentration of the first impurity in the n-type charge generation layer 31 ranges from 0.5% to 2%.

[0270] When the doping concentration of the first impurity in the n-type charge generation layer 31 is equal to or close to 0.5%, the doping concentration of the p-type charge generation layer 32 is adjusted accordingly, so that the n-type charge generation layer 31 and the p-type charge generation layer 32 have a good concentration difference, so that the electrons and holes in the n-type charge generation layer 31 and the p-type charge generation layer 32 can move. In addition, the electrons generated in the n-type charge generation layer 31 can move to the first light-emitting unit 20, and the electrons generated in the p-type charge generation layer 32 can move to the second light-emitting unit 40, so as to prevent the holes and electrons in the charge generation stack 30 formed by the n-type charge generation layer 31 and the p-type charge generation layer 32 from being piled up and causing the problem of lateral transmission, and to prevent the problem of color crosstalk between adjacent light-emitting devices O, so as to improve the color deviation of the display substrate 100 and improve the display quality of the display substrate 100.

[0271] When the doping concentration of the first impurity in the n-type charge generation layer 31 is equal to or close to 2%, the doping concentration of the p-type charge generation layer 32 is adjusted accordingly, so that the n-type charge generation layer 31 and the p-type charge generation layer 32 have a good concentration difference, so that the electrons and holes in the n-type charge generation layer 31 and the p-type charge generation layer 32 can move. In addition, the electrons generated in the n-type charge generation layer 31 can move to the first light-emitting unit 20, and the electrons generated in the p-type charge generation layer 32 can move to the second light-emitting unit 40, so as to prevent the holes and electrons in the charge generation stack 30 formed by the n-type charge generation layer 31 and the p-type charge generation layer 32 from being piled up and causing the problem of lateral transmission, and to prevent the problem of color crosstalk between adjacent light-emitting devices O, so as to improve the color deviation of the display substrate 100 and improve the display quality of the display substrate 100.

[0272] It should be noted that how to adjust the doping concentration of the p-type charge generation layer 32 will be described below in conjunction with the accompanying drawings.

[0273] In some embodiments, in combination Fig.14 As shown, the p-type charge generation layer 32 in the charge generation stack 30 in the light emitting device O is doped with a second impurity. Doping the p-type charge generation layer 32 with the second impurity can help improve the hole mobility in the p-type charge generation layer 32, so that the p-type charge generation layer 32 and the n-type charge generation layer 31 form a PN junction (charge generation stack 30). The charge generation stack 30 formed based on this can better generate electrons moving toward the first light emitting unit 20 and holes moving toward the second light emitting unit 40.

[0274] In some examples, the second impurity may be an organic substance. However, the embodiments of the present disclosure are not limited thereto. Any organic substance that can improve the hole mobility in the type charge generation layer 32 can be used as the second impurity.

[0275] In some examples, the doping concentration of the second impurity in the p-type charge generation layer 32 ranges from 5% to 15%.

[0276] When the doping concentration of the second impurity in the p-type charge generation layer 32 is equal to or close to 5%, the doping concentration of the n-type charge generation layer 31 is adjusted accordingly, so that the p-type charge generation layer 32 and the n-type charge generation layer 31 have a good concentration difference, so that the electrons and holes in the p-type charge generation layer 32 and the n-type charge generation layer 31 can move. In addition, the electrons generated in the p-type charge generation layer 32 can move to the second light-emitting unit 40, and the electrons generated in the n-type charge generation layer 31 can move to the first light-emitting unit 20, so as to prevent the holes and electrons in the charge generation stack 30 formed by the n-type charge generation layer 31 and the p-type charge generation layer 32 from being piled up and causing the problem of lateral transmission, and to prevent the problem of color crosstalk between adjacent light-emitting devices O, so as to improve the color deviation of the display substrate 100 and improve the display quality of the display substrate 100.

[0277] When the doping concentration of the second impurity in the p-type charge generation layer 32 is equal to or close to 15%, the doping concentration of the n-type charge generation layer 31 is adjusted accordingly, so that the p-type charge generation layer 32 and the n-type charge generation layer 31 have a good concentration difference, so that the electrons and holes in the p-type charge generation layer 32 and the n-type charge generation layer 31 can move. In addition, the electrons generated in the p-type charge generation layer 32 can move to the second light-emitting unit 40, and the electrons generated in the n-type charge generation layer 31 can move to the first light-emitting unit 20, so as to prevent the holes and electrons in the charge generation stack 30 formed by the n-type charge generation layer 31 and the p-type charge generation layer 32 from being piled up and causing the problem of lateral transmission, and to prevent the problem of color crosstalk between adjacent light-emitting devices O, so as to improve the color deviation of the display substrate 100 and improve the display quality of the display substrate 100.

[0278] It should be noted that how to adjust the doping concentration of the n-type charge generation layer 31 will be described below in conjunction with the accompanying drawings.

[0279] Fig.24 is a spectrum diagram of a red light emitting device according to some further embodiments, Fig.25 is a spectrum diagram of a green light emitting device according to some further embodiments, Fig.26 Spectrum diagram of blue light emitting devices according to some other embodiments. Figure 24 to Figure 26 The following description is made by taking the grayscale of the light emitting device O in the display substrate 100 as a high grayscale (eg, 255 grayscale) and the n-type charge generation layer 31 as a second n-type charge generation layer. Fig. 27 is a spectrum diagram of a red light emitting device according to some further embodiments, Fig.28is a spectrum diagram of a green light emitting device according to some further embodiments, Fig.29 Spectrum diagram of blue light emitting devices according to some other embodiments. Figure 27 to Figure 29 The following description is made by taking the grayscale of the light emitting device O in the display substrate 100 as a high grayscale (eg, 255 grayscales) and the n-type charge generation layer 31 as a first n-type charge generation layer as an example.

[0280] Figure 27 to Figure 29 The spectrum shown is Figure 24 to Figure 26 The difference between the spectra shown: Figure 27 to Figure 29 The doping concentration of the second impurity in the p-type charge generation layer 32 of the light emitting device O corresponding to the spectrum diagram shown is 10%, and Figure 24 to Figure 26 The doping concentration of the second impurity in the p-type charge generation layer 32 in the light emitting device O corresponding to the spectrum diagram is 5%.

[0281] In some embodiments, in combination Fig.14 , Figure 24 to Figure 29 As shown, the doping concentration of the first impurity in the n-type charge generation layer 31 is inversely correlated with the doping concentration of the second impurity in the p-type charge generation layer 32 .

[0282] Among them, "the doping concentration of the first impurity in the n-type charge generation layer 31 is inversely correlated with the doping concentration of the second impurity in the p-type charge generation layer 32" can be understood as, when the doping concentration of the second impurity in the p-type charge generation layer 32 is greater than or equal to the threshold doping concentration, the lower the doping concentration of the first impurity in the n-type charge generation layer 31, the charge generation stack 30 formed based on this can better improve the color deviation problem of the display substrate 100. When the doping concentration of the second impurity in the p-type charge generation layer 32 is less than the threshold doping concentration, the higher the doping concentration of the first impurity in the n-type charge generation layer 31, the charge generation stack 30 formed based on this can better improve the color deviation problem of the display substrate 100.

[0283] In some examples, the threshold doping concentration is about 10%. The following description takes the threshold doping concentration of 10% as an example:

[0284] In view of the influence of the doping concentration of the n-type charge generation layer 31 and the doping concentration of the p-type charge generation layer 32 in the charge generation stack 30 on the noise peak of the light emitted by the light emitting device O, combined with Figure 24 to Figure 26 As shown, the doping concentration of the second impurity in the p-type charge generation layer 32 is set to be less than the threshold doping concentration, that is, the doping concentration of the second impurity in the p-type charge generation layer 32 is set to be less than 10%: the doping concentration of the first impurity in the n-type charge generation layer 31 is adjusted so that the doping concentration of the first impurity in the n-type charge generation layer 31 floats within the range of 0.5% to 2% for experiment.

[0285] Specifically, the spectra are shown when the doping concentration of the second impurity in the p-type charge generation layer 32 is about 5% and the doping concentration of the first impurity in the n-type charge generation layer 31 is about 0.5%, 1% and 2%.

[0286] Combination Figure 24 to Figure 26 As shown, when the doping concentration of the second impurity in the p-type charge generation layer 32 is about 5%, the doping concentration of the first impurity in the n-type charge generation layer 31 is in the range of 0.5% to 2%, and when the doping concentration is 0.5%, 1%, and 2%, the proportion of the impurity peak of the light emitted by the corresponding light-emitting device O decreases successively. That is, when the doping concentration of the second impurity in the p-type charge generation layer 32 is less than the threshold doping concentration, the higher the doping concentration of the first impurity in the n-type charge generation layer 31, the smaller the proportion of the impurity peak of the light emitted by the light-emitting device O can be, and the color shift problem of the display substrate 100 can be better solved.

[0287] And, combined with Figure 24 to Figure 26 As shown, no matter what color light is emitted by the light-emitting device O: when the doping concentration of the second impurity in the p-type charge generation layer 32 is less than the threshold doping concentration, the higher the doping concentration of the first impurity in the n-type charge generation layer 31 is set, the better the proportion of impurity peaks in the light-emitting device O can be reduced, so as to better solve the problem of color deviation of the display substrate 100.

[0288] In summary, when the doping concentration of the first impurity in the n-type charge generation layer 31 is within 0.5% to 2%, and the doping concentration of the second impurity in the p-type charge generation layer 32 is within 5% to 15%: when the doping concentration of the second impurity in the p-type charge generation layer 32 is low (less than 10%), and the doping concentration of the first impurity in the n-type charge generation layer 31 is large (equal to or close to 2%), in the charge generation stack 30, the p-type charge generation layer 32 has a small hole content and a weak ability to attract electrons, that is, the electron content in the space charge region (the interface region between the n-type charge generation layer 31 and the p-type charge generation layer 32) is small. At this time, the n-type charge generation layer 31 with a high doping concentration has a large electron content, and thus the concentration of electrons in the n-type charge generation layer 31 and the electrons in the space charge region have a concentration difference, so that the electrons in the n-type charge generation layer 31 can move to the space charge region close to the p-type charge generation layer 32 to supplement the electron content in the space charge region. Furthermore, the space charge region in the charge generation stack 30 can be made to stabilize the PN junction.

[0289] Based on this, the holes in the space charge region will move upward and recombine with the electrons of the second light-emitting unit 40 (provided by the second electrode 50) to form excitons, and the electrons in the space charge region will move downward and recombine with the holes of the first light-emitting unit 20 (provided by the first electrode 10) to form excitons. The more the number of holes and electrons in the two layers of light-emitting units (the first light-emitting unit 20 and the second light-emitting unit 40) matches, the weaker the chance of holes and electrons being laterally transmitted and crosstalk being generated. That is, the formed charge generation stack 30 can better improve the problem of lateral transmission of holes and electrons inside it, so as to solve the problem of color deviation of the display substrate 100.

[0290] In some examples, when the n-type charge generation layer 31 is a first n-type charge generation layer, and the doping concentration of the first impurity in the first n-type charge generation layer is about 2%, and the doping concentration of the second impurity in the p-type charge generation layer 32 is less than the threshold doping concentration (the doping concentration is in the range of 5% to 10%), the lateral resistance of the charge generation stack 30 formed at this time is 150 GΩ / μm. 2 ~210GΩ / μm 2 That is, the lateral resistance value of the charge generation stack 30 can be made larger, so that the charge generation stack 30 can effectively suppress the lateral transmission of holes and electrons in the charge generation stack 30 to the adjacent light-emitting device O, improve the color deviation problem of the display substrate 100, and improve the display quality of the display substrate 100.

[0291] For example, when the p-type charge generation layer 32 is the first p-type charge generation layer, the unit of the lateral resistance of the charge generation stack 30 formed at this time is 160 GΩ / μm. 2 ~210GΩ / μm 2 .

[0292] For example, when the p-type charge generation layer 32 is the second p-type charge generation layer, the unit of the lateral resistance of the charge generation stack 30 formed at this time is 150 GΩ / μm. 2 ~190GΩ / μm 2 .

[0293] In summary, when the n-type charge generation layer 31 is a first n-type charge generation layer, and the doping concentration of the first impurity in the first n-type charge generation layer is about 2%, the p-type charge generation layer 32 is set as a first p-type charge generation layer, and the doping concentration of the second impurity in the first p-type charge generation layer is less than the threshold doping concentration (the doping concentration is in the range of 5% to 10%), the lateral resistance of the formed charge generation stack 30 can be made larger, and the color deviation problem of the display substrate 100 can be better improved to improve the display quality of the display substrate 100. However, the present disclosure is not limited to this.

[0294] In some examples, when the doping concentration of the first impurity in the n-type charge generation layer 31 is in the range of 1% to 2%, the doping concentration of the second impurity in the p-type charge generation layer 32 is in the range of 5% to 10%.

[0295] That is, when the doping concentration of the second impurity in the first p-type charge generation layer is less than the threshold doping concentration (the doping concentration is in the range of 5% to 10%), an n-type charge generation layer 31 with a larger doping concentration can be selected, that is, a corresponding n-type charge generation layer 31 with a doping concentration of the first impurity in the range of 1% to 2% can be selected.

[0296] Based on this, the charge generation stack 30 can form a PN junction, and the lateral resistance of the formed charge generation stack 30 can be made larger, which can better improve the color deviation problem of the display substrate 100 and improve the display quality of the display substrate 100. However, the present disclosure is not limited to this.

[0297] In some examples, the doping concentration of the n-type charge generation layer 31 and the doping concentration of the p-type charge generation layer 32 in the charge generation stack 30 affect the noise peak of the light emitted by the light emitting device O, combined with Figure 27 to Figure 29 As shown, the doping concentration of the second impurity in the p-type charge generation layer 32 is set to be greater than or equal to the threshold doping concentration, that is, the doping concentration of the second impurity in the p-type charge generation layer 32 is set to be greater than or equal to 10%: the doping concentration of the first impurity in the n-type charge generation layer 31 is adjusted so that the doping concentration of the first impurity in the n-type charge generation layer 31 floats within the range of 0.5% to 2% for experiments.

[0298] Specifically, the spectra are shown when the doping concentration of the second impurity in the p-type charge generation layer 32 is about 10% and the doping concentration of the first impurity in the n-type charge generation layer 31 is about 0.5% and 1%.

[0299] Combination Figure 27 to Figure 29 As shown, when the doping concentration of the second impurity in the p-type charge generation layer 32 is about 10%, the doping concentration of the first impurity in the n-type charge generation layer 31 is in the range of 0.5% to 2%, and when the doping concentration is 1% and the doping concentration is 0.5%, the proportion of the impurity peak of the light emitted by the corresponding light-emitting device O decreases successively. That is, when the doping concentration of the second impurity in the p-type charge generation layer 32 is greater than or equal to the threshold doping concentration, the higher the doping concentration of the first impurity in the n-type charge generation layer 31, the smaller the proportion of the impurity peak of the light emitted by the light-emitting device O can be, and the color shift problem of the display substrate 100 can be better solved.

[0300] When the doping concentration of the first impurity in the n-type charge generation layer 31 is within the range of 0.5% to 2%, and the doping concentration of the second impurity in the p-type charge generation layer 32 is within the range of 5% to 15%: when the doping concentration of the second impurity in the p-type charge generation layer 32 is high (greater than or equal to 10%), and the doping concentration of the first impurity in the n-type charge generation layer 31 is low (equal to or close to 0.5%), in the charge generation stack 30, the p-type charge generation layer 32 has a large hole content and a strong ability to attract electrons, that is, the space charge region (the interface region between the n-type charge generation layer 31 and the p-type charge generation layer 32) has a large electron content, that is, a small hole content. At this time, the p-type charge generation layer 32 with a high doping concentration has a large hole content, and thus the concentration of holes in the p-type charge generation layer 32 and the holes in the space charge region have a concentration difference, so that the holes in the p-type charge generation layer 32 can move to the space charge region close to the n-type charge generation layer 31 to supplement the hole content in the space charge region. Furthermore, the space charge region in the charge generation stack 30 can be made to stabilize the PN junction.

[0301] Based on this, the holes in the space charge region will move upward and recombine with the electrons of the second light-emitting unit 40 (provided by the second electrode 50) to form excitons, and the electrons in the space charge region will move downward and recombine with the holes of the first light-emitting unit 20 (provided by the first electrode 10) to form excitons. The more the number of holes and electrons in the two layers of light-emitting units (the first light-emitting unit 20 and the second light-emitting unit 40) matches, the weaker the chance of holes and electrons being laterally transmitted and crosstalk being generated. That is, the charge generation stack 30 formed based on this can better improve the problem of lateral transmission of holes and electrons inside it, and improve the problem of color crosstalk between adjacent light-emitting devices O in the display substrate 100, which will lead to color deviation of the display substrate 100.

[0302] For example, high grayscale (255 grayscale) is used as an example to introduce: Fig. 27 As shown, the proportion of the noise peaks generated by the light-emitting device O in the first sub-pixel P1 (red) being affected by the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%. Fig.28 As shown, the proportion of the noise peak generated by the light-emitting device O in the second sub-pixel P2 (green) affected by the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%. Fig.29 As shown, the proportion of the noise peak generated by the light-emitting device O in the third sub-pixel P3 (blue) affected by the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the second sub-pixel P2 (green) is approximately 0%.

[0303] That is, among the light-emitting device O in the first sub-pixel P1 (red), the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue), the light-emitting device O in one sub-pixel P is affected by the light-emitting devices O in the other two sub-pixels P and the proportion of the noise peak generated is approximately 0%.

[0304] In summary, no matter what color light is emitted by the light-emitting device O, when the doping concentration of the second impurity in the p-type charge generation layer 32 is greater than or equal to the threshold doping concentration, the higher the doping concentration of the first impurity in the n-type charge generation layer 31, the smaller the proportion of the impurity peak in the light emitted by the light-emitting device O can be, which can better solve the problem of color deviation of the display substrate 100.

[0305] In some examples, when the n-type charge generation layer 31 is a first n-type charge generation layer, and the doping concentration of the first impurity in the first n-type charge generation layer is approximately 0.5%, and the doping concentration of the second impurity in the p-type charge generation layer 32 is greater than or equal to the threshold doping concentration (the doping concentration is in the range of 10% to 15%), the lateral resistance of the charge generation stack 30 formed at this time has a value unit of 140 GΩ / μm 2 ~200GΩ / μm 2 That is, the lateral resistance value of the charge generation stack 30 can be made larger, so that the charge generation stack 30 can effectively suppress the lateral transmission of holes and electrons in the charge generation stack 30 to the adjacent light-emitting device O, improve the color deviation problem of the display substrate 100, and improve the display quality of the display substrate 100.

[0306] For example, when the p-type charge generation layer 32 is the first p-type charge generation layer, the lateral resistance of the charge generation stack 30 formed at this time is 150 GΩ / μm. 2 ~200GΩ / μm 2 .

[0307] For example, when the p-type charge generation layer 32 is the second p-type charge generation layer, the unit of the lateral resistance of the charge generation stack 30 formed at this time is 140 GΩ / μm. 2 ~180GΩ / μm 2 .

[0308] In summary, when the n-type charge generation layer 31 is a first n-type charge generation layer, and the doping concentration of the first impurity in the first n-type charge generation layer is about 0.5%, the p-type charge generation layer 32 is set as a first p-type charge generation layer, and the doping concentration of the second impurity in the first p-type charge generation layer is greater than or equal to the threshold doping concentration (the doping concentration is in the range of 10% to 15%), the lateral resistance of the formed charge generation stack 30 can be made larger, and the color deviation problem of the display substrate 100 can be better improved to improve the display quality of the display substrate 100. However, the present disclosure is not limited to this.

[0309] In some examples, when the doping concentration of the first impurity in the n-type charge generation layer 31 is in the range of 0.5% to 1%, the doping concentration of the second impurity in the p-type charge generation layer 32 is in the range of 10% to 15%.

[0310] That is, when the doping concentration of the second impurity in the first p-type charge generation layer is greater than or equal to the threshold doping concentration (the doping concentration is in the range of 10% to 15%), an n-type charge generation layer 31 with a smaller doping concentration can be selected, that is, a corresponding n-type charge generation layer 31 with a doping concentration of the first impurity in the range of 0.5% to 1% can be selected.

[0311] Based on this, the charge generation stack 30 can form a PN junction, and the lateral resistance of the formed charge generation stack 30 can be made larger, which can better improve the color deviation problem of the display substrate 100 and improve the display quality of the display substrate 100. However, the present disclosure is not limited to this.

[0312] Fig.30 is a spectrum diagram of a red light emitting device according to some further embodiments, Fig.31 is a spectrum diagram of a green light emitting device according to some further embodiments, Fig.32 Spectrum diagram of blue light emitting devices according to some other embodiments. Figure 30 to Figure 32 The following description will be made by taking the grayscale of the light emitting device O in the display substrate 100 as a low grayscale (eg, grayscale 8) as an example.

[0313] Since the color shift phenomenon of the display substrate 100 in the low grayscale state is more obvious than that in the high grayscale state. Figure 27 to Figure 29 On the basis of the above, the experiment is conducted by only changing the grayscale of the light emitting device O. Specifically, the grayscale of the light emitting device O in the display substrate 100 is low grayscale (for example, grayscale 8) as an example for description.

[0314] Combination Figure 30 to Figure 32As shown, it can be known that in the low grayscale state, when the doping concentration of the second impurity in the p-type charge generation layer 32 is greater than or equal to the threshold doping concentration, the impurity concentration of the first impurity in the n-type charge generation layer 31 is as small as possible. That is, when the impurity concentration of the first impurity in the n-type charge generation layer 31 is within the range of 0.5% to 2%, and the impurity concentration is equal to or close to 0.5%, the proportion of the impurity peak of the light emitted by the light-emitting device O can be relatively smaller, which can be more conducive to improving the color deviation problem of the display substrate 100.

[0315] Specific, combined Fig.30 As shown, the proportion of the noise peaks generated by the light-emitting device O in the first sub-pixel P1 (red) being affected by the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%. Fig.31 As shown, the proportion of the noise peak generated by the light-emitting device O in the second sub-pixel P2 (green) affected by the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%. Fig.32 As shown, the proportion of the impurity peak generated by the light-emitting device O in the third sub-pixel P3 (blue) being affected by the light-emitting device O in the first sub-pixel P1 (red) is less than or equal to 3%. The proportion of the impurity peak generated by the light-emitting device O in the third sub-pixel P3 (blue) being affected by the light-emitting device O in the second sub-pixel P2 (green) is less than or equal to 2.5%.

[0316] In summary, in the low grayscale state, the stray peaks of the light-emitting device O that emits red light and the light-emitting device O that emits green light are basically removed, while the light-emitting device O that emits blue light will still have a certain degree of stray peaks. However, the proportion of stray peaks of the light emitted by the light-emitting device O that emits blue light can also be made less than 4%, and the color deviation problem of the display substrate 100 can also be improved. Moreover, no matter what color light is emitted by the light-emitting device O, when the doping concentration of the second impurity in the p-type charge generation layer 32 is greater than or equal to the threshold doping concentration, and the impurity concentration is equal to or close to 0.5%, the color deviation of the display substrate 100 can be improved better. Among them, Fig.32 The light emitting device O emitting blue light is particularly obvious, and the doping ratio between the n-type charge generation layer 31 and the p-type charge generation layer can be further adjusted to further improve the color shift improvement effect of the display substrate 100.

[0317] Combined with the following table 2, Figure 27 to Figure 32 It can also be known that under 255 grayscale and 8 grayscale, the differences in color coordinates under different doping concentrations of the n-type charge generation layer are relatively small, which can be beneficial to improving the color deviation improvement effect of the display substrate 100.

[0318] Table 2 shows the differences in color coordinates at different impurity concentrations of the n-type charge generation layer at 255 grayscales and 8 grayscales.

[0319]

[0320] The red light emitting device O and the green light emitting device O are both differences on the X axis (the X coordinate axis in the color coordinate), and the blue light emitting device O is the difference on the Y axis (the Y coordinate axis in the color coordinate).

[0321] The above first introduces in conjunction with the relevant drawings that "other parameters" may include the doping concentration of the charge generation layer of the charge generation stack 30. The following mainly introduces the relationship between the doping concentration of the charge generation layer and the material of the charge generation layer.

[0322] Fig.33 is a spectrum diagram of a red light emitting device according to some further embodiments, Fig.34 is a spectrum diagram of a green light emitting device according to some further embodiments, Fig.35 Spectrum diagram of blue light emitting devices according to some other embodiments. Figure 33 to Figure 35 The following description will be made by taking the grayscale of the light emitting device O in the display substrate 100 as a high grayscale (eg, 255 grayscales) and the n-type charge generation layer 31 as a second n-type charge generation layer as an example. Fig.36 is a spectrum diagram of a red light emitting device according to some further embodiments, Fig.37 is a spectrum diagram of a green light emitting device according to some further embodiments, Fig.38 Spectrum diagram of blue light emitting devices according to some other embodiments. Figure 36 to Figure 38 The following description is made by taking the grayscale of the light emitting device O in the display substrate 100 as a high grayscale (eg, 255 grayscales) and the n-type charge generation layer 31 as a first n-type charge generation layer as an example.

[0323] Figure 36 to Figure 38 The spectrum shown is Figure 33 to Figure 35 The difference between the spectra shown: Figure 36 to Figure 38 The n-type charge generation layer 31 in the light emitting device O corresponding to the spectrum diagram shown is the first n-type charge generation layer. Figure 33 to Figure 35 The n-type charge generation layer 31 in the light-emitting device O corresponding to the spectrum diagram shown is the second n-type charge generation layer.

[0324] In some embodiments, in combination Fig.14 , Figure 33 to Figure 38 As shown, the magnitude of the lateral resistance of the n-type charge generation layer 31 is inversely correlated with the doping concentration of the second impurity in the p-type charge generation layer 32 .

[0325] “The magnitude of the lateral resistance of the n-type charge generation layer 31 is inversely correlated with the doping concentration of the second impurity in the p-type charge generation layer 32” can be understood as, since the n-type charge generation layer 31 may include a first n-type charge generation layer and a second n-type charge generation layer, and the lateral resistance of the first n-type charge generation layer is greater than the lateral resistance of the second n-type charge layer. Based on this, when the n-type charge generation layer 31 is the first n-type charge generation layer, the lower the doping concentration of the second impurity in the p-type charge generation layer 32, the better the improvement effect on the color deviation of the display substrate 100, and when the n-type charge generation layer 31 is the second n-type charge generation layer, the higher the doping concentration of the second impurity in the p-type charge generation layer 32, the better the improvement effect on the color deviation of the display substrate 100.

[0326] In some examples, when the second n-type charge generation layer is selected as the n-type charge generation layer 31, the influence of the doping concentration of the second impurity in the p-type charge generation layer 32 on the impurity peak of the light emitted by the light emitting device O is combined with Figure 33 to Figure 35 As shown, when the second n-type charge generation layer is selected as the n-type charge generation layer 31, the doping concentration of the second impurity in the p-type charge generation layer 32 is adjusted so that the doping concentration of the second impurity in the p-type charge generation layer 32 floats within the range of 5% to 15% for experiments.

[0327] Specifically, the spectra are shown when the n-type charge generation layer 31 is the second n-type charge generation layer and the doping concentration of the second impurity in the p-type charge generation layer 32 is about 5% and 10%.

[0328] Combination Figure 33 to Figure 35 As shown, when the n-type charge generation layer 31 selects the second n-type charge generation layer, when the doping concentration of the second impurity in the p-type charge generation layer 32 is 5% and 10%, the proportion of the impurity peak of the light emitted by the corresponding light-emitting device O decreases successively. That is, when the n-type charge generation layer 31 selects the second n-type charge generation layer with a smaller lateral resistance value, the higher the doping concentration of the second impurity in the p-type charge generation layer 31, the smaller the proportion of the impurity peak of the light emitted by the light-emitting device O can be, and the color deviation problem of the display substrate 100 can be better solved.

[0329] And, combined with Figure 33 to Figure 35 As shown, no matter what color light is emitted from the light-emitting device O: when the n-type charge generation layer 31 selects the second n-type charge generation layer, the higher the doping concentration of the second impurity in the p-type charge generation layer 31, the smaller the proportion of the impurity peak in the light emitted by the light-emitting device O can be, which can better solve the problem of color deviation of the display substrate 100.

[0330] In summary, when the n-type charge generation layer 31 is the second n-type charge generation layer, and the doping concentration of the second impurity in the p-type charge generation layer 32 is within 5% to 15%:

[0331] Since the lateral resistance of the second n-type charge generation layer is smaller (relative to the first n-type charge generation layer), the electrons in the second n-type charge generation layer are prone to lateral transmission problems, which in turn leads to a smaller electron content in the second n-type charge generation layer. Since the second n-type charge generation layer has a smaller electron content, the ability to attract holes is weaker, resulting in a smaller hole content in the space charge region (the interface region between the n-type charge generation layer 31 and the p-type charge generation layer 32). At this time, the higher the doping concentration of the p-type charge generation layer 32, the higher the hole content in the p-type charge generation layer 32. Furthermore, the holes in the p-type charge generation layer 32 and the holes in the space charge region can have a concentration difference, so that the holes in the p-type charge generation layer 32 can move to the space charge region close to the n-type charge generation layer 31 to supplement the hole content in the space charge region. Furthermore, the space charge region in the charge generation stack 30 can stabilize the PN junction.

[0332] Based on this, the holes in the space charge region will move upward and recombine with the electrons of the second light-emitting unit 40 (provided by the second electrode 50) to form excitons, and the electrons in the space charge region will move downward and recombine with the holes of the first light-emitting unit 20 (provided by the first electrode 10) to form excitons. The more the number of holes and electrons in the two layers of light-emitting units (the first light-emitting unit 20 and the second light-emitting unit 40) matches, the weaker the chance of holes and electrons being laterally transmitted and crosstalk being generated. That is, the charge generation stack 30 formed based on this can better improve the problem of lateral transmission of holes and electrons inside it, so as to solve the problem of color deviation of the display substrate 100.

[0333] In some examples, when the first n-type charge generation layer is selected as the n-type charge generation layer 31, the influence of the doping concentration of the second impurity in the p-type charge generation layer 32 on the impurity peak of the light emitted by the light emitting device O is combined with Figure 36 to Figure 38 As shown, when the first n-type charge generation layer is selected as the n-type charge generation layer 31, the doping concentration of the second impurity in the p-type charge generation layer 32 is adjusted so that the doping concentration of the second impurity in the p-type charge generation layer 32 floats within the range of 5% to 15% for experiments.

[0334] Specifically, the spectra are shown when the n-type charge generation layer 31 is the first n-type charge generation layer and the doping concentration of the second impurity in the p-type charge generation layer 32 is approximately 5%, 10% and 15%.

[0335] Combination Figure 36 to Figure 38As shown, when the n-type charge generation layer 31 selects the first n-type charge generation layer, when the doping concentration of the second impurity in the p-type charge generation layer 32 is 15%, 10% and 5%, the proportion of the impurity peak of the light emitted by the corresponding light-emitting device O decreases successively. That is, when the n-type charge generation layer 31 selects the first n-type charge generation layer with a smaller lateral resistance value, the lower the doping concentration of the second impurity in the p-type charge generation layer 31, the smaller the proportion of the impurity peak of the light emitted by the light-emitting device O can be, and the color deviation problem of the display substrate 100 can be better solved.

[0336] And, combined with Figure 36 to Figure 38 As shown, no matter what color light is emitted from the light-emitting device O: when the n-type charge generation layer 31 selects the first n-type charge generation layer, the lower the doping concentration of the second impurity in the p-type charge generation layer 31, the smaller the proportion of the impurity peak in the light emitted by the light-emitting device O can be, which can better solve the problem of color deviation of the display substrate 100.

[0337] In summary, when the n-type charge generation layer 31 is the first n-type charge generation layer, and the doping concentration of the second impurity in the p-type charge generation layer 32 is within 5% to 15%, the electrons in the first n-type charge generation layer are not easy to have lateral transmission problems due to the large lateral resistance of the first n-type charge generation layer (relative to the second n-type charge generation layer), which will lead to a large amount of electrons in the first n-type charge generation layer. Since the first n-type charge generation layer has a large amount of electrons, it will have a strong ability to attract holes, resulting in a large amount of holes and a small amount of electrons in the space charge region (the interface region between the n-type charge generation layer 31 and the p-type charge generation layer 32). At this time, the lower the doping concentration of the p-type charge generation layer 32, the less the hole content in the p-type charge generation layer 32. Furthermore, a concentration difference can be made between the holes in the p-type charge generation layer 32 and the holes in the space charge region, and the holes in the space charge region can move to the p-type charge generation layer 32, and a concentration difference can be made between the electrons in the n-type charge generation layer 31 and the electrons in the space charge region, and the electrons in the n-type charge generation layer 31 can move to the space charge region. Based on this, the contents of electrons and holes in the space charge region can be made relatively balanced, and the PN junction in the space charge region within the charge generation stack 30 can be stabilized.

[0338] Based on this, the holes in the space charge region will move upward and recombine with the electrons of the second light-emitting unit 40 (provided by the second electrode 50) to form excitons, and the electrons in the space charge region will move downward and recombine with the holes of the first light-emitting unit 20 (provided by the first electrode 10) to form excitons. The more the number of holes and electrons in the two layers of light-emitting units (the first light-emitting unit 20 and the second light-emitting unit 40) matches, the weaker the chance of holes and electrons being laterally transmitted and crosstalk being generated. That is, the charge generation stack 30 formed based on this can better improve the problem of lateral transmission of holes and electrons inside it, so as to solve the problem of color deviation of the display substrate 100.

[0339] For example, high grayscale (255 grayscale) is used as an example to introduce: Fig.36 As shown, the proportion of the noise peaks generated by the light-emitting device O in the first sub-pixel P1 (red) being affected by the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%. Fig.37 As shown, the proportion of the noise peak generated by the light-emitting device O in the second sub-pixel P2 (green) affected by the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%. Fig.38 As shown, the proportion of the noise peak generated by the light-emitting device O in the third sub-pixel P3 (blue) affected by the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the second sub-pixel P2 (green) is approximately 0%.

[0340] That is, among the light-emitting device O in the first sub-pixel P1 (red), the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue), the light-emitting device O in one sub-pixel P is affected by the light-emitting devices O in the other two sub-pixels P and the proportion of the noise peak generated is approximately 0%.

[0341] In summary, no matter what color light is emitted by the light-emitting device O, when the n-type charge generation layer 31 selects the first n-type charge generation layer, the lower the doping concentration of the second impurity in the p-type charge generation layer 31, the smaller the proportion of the impurity peak in the light emitted by the light-emitting device O can be, which can better solve the problem of color deviation of the display substrate 100.

[0342] Fig.39 is a spectrum diagram of a red light emitting device according to some further embodiments, Fig.40 is a spectrum diagram of a green light emitting device according to some further embodiments, Fig.41 Spectrum diagram of blue light emitting devices according to some further embodiments.

[0343] in, Figure 39 to Figure 41The following description will be made by taking the grayscale of the light emitting device O in the display substrate 100 as a low grayscale (eg, grayscale 8) and the n-type charge generation layer 31 as a first n-type charge generation layer as an example.

[0344] Since the color shift phenomenon of the display substrate 100 in the low grayscale state is more obvious than that in the high grayscale state. Figure 36 to Figure 38 On the basis of the above, the experiment is conducted by only changing the grayscale of the light emitting device O. Specifically, the grayscale of the light emitting device O in the display substrate 100 is low grayscale (for example, grayscale 8) as an example for description.

[0345] Combination Figure 39 to Figure 41 As shown, it can be known that in the low grayscale state, when the n-type charge generation layer 31 selects the first n-type charge generation layer, the lower the doping concentration of the second impurity in the p-type charge generation layer 31, the smaller the proportion of the impurity peak of the light emitted by the light-emitting device O can be, which can better solve the problem of color deviation of the display substrate 100.

[0346] That is, when the n-type charge generation layer 31 selects the first n-type charge generation layer, the doping concentration of the second impurity in the p-type charge generation layer 31 is in the range of 5% to 15%. When the impurity concentration is equal to or close to 5%, the proportion of the impurity peak of the light emitted by the light-emitting device O can be relatively smaller, which can be more conducive to improving the color deviation problem of the display substrate 100.

[0347] Specific, combined Fig.39 As shown, the proportion of the noise peak generated by the light-emitting device O in the first sub-pixel P1 (red) being affected by the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%.

[0348] Combination Fig.40 As shown, the proportion of the noise peak generated by the light-emitting device O in the second sub-pixel P2 (green) being affected by the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%.

[0349] Combination Fig.41 As shown, the proportion of the impurity peak generated by the light-emitting device O in the third sub-pixel P3 (blue) being affected by the light-emitting device O in the first sub-pixel P1 (red) is less than or equal to 3.5%. The proportion of the impurity peak generated by the light-emitting device O in the third sub-pixel P3 (blue) being affected by the light-emitting device O in the second sub-pixel P2 (green) is less than or equal to 3%.

[0350] In summary, in the low grayscale state, the stray peaks of the light emitting device O emitting red light and the light emitting device O emitting green light are basically removed, while the light emitting device O emitting blue light still has a certain degree of stray peaks. However, the proportion of stray peaks of the light emitted by the light emitting device O emitting blue light can be made less than 4%, and the color deviation problem of the display substrate 100 can also be improved.

[0351] Moreover, no matter what color light is emitted by the light-emitting device O, when the n-type charge generation layer 31 uses the first n-type charge generation layer, when the doping concentration of the second impurity in the p-type charge generation layer 31 is equal to or close to 5%, the color deviation of the display substrate 100 can be improved better.

[0352] in, Fig.41 The light emitting device O emitting blue light is particularly obvious, and the improvement effect of the color deviation of the display substrate 100 can be further improved by adjusting the lateral resistance of the n-type charge generation layer 31 and the doping ratio between the p-type charge generation layer.

[0353] Combined with the following table 3, Figure 36 to Figure 41 As shown, it can also be known that at 255 grayscales and 8 grayscales, the differences in color coordinates at different doping concentrations of the p-type charge generation layer are relatively small, which can be beneficial to improving the color deviation improvement effect of the display substrate 100.

[0354] In the following Table 3, the light-emitting device O emitting red light and the light-emitting device O emitting green light are both differences on the X-axis (X coordinate axis in the color coordinate), and the light-emitting device O emitting blue light is the difference on the Y-axis (Y coordinate axis in the color coordinate).

[0355] Table 3 shows the differences in color coordinates at different doping concentrations of the p-type charge generation layer at 255 grayscales and 8 grayscales.

[0356]

[0357] In some examples, the magnitude of the lateral resistance of the charge generation stack 30 is inversely correlated with the doping concentration of the second impurity in the p-type charge generation layer 32. Wherein, "the magnitude of the lateral resistance of the charge generation stack 30 is inversely correlated with the doping concentration of the second impurity in the p-type charge generation layer 32" can be understood as that the value range of the lateral resistance of the charge generation stack 30 is 100GΩ / μm 2～ 260GΩ / μm 2 On the basis of:

[0358] For example, the lateral resistance value of the charge generation stack 30 is in the range of 180 GΩ / μm. 2～ 260GΩ / μm 2When the doping concentration of the second impurity in the p-type charge generation layer 32 is in the range of 5% to 10%.

[0359] The lateral resistance of the charge generation stack 30 is greater than 180 GΩ / μm 2 When the charge generation stack 30 has a lateral resistance value of 180 GΩ / μm 2～ 260GΩ / μm 2 At this time, a p-type charge generation layer 32 with a lower doping concentration of the second impurity can be selected to supplement the electron content of the space charge region in the charge generation stack 30 with the n-type charge generation layer 31. In turn, the space charge region in the charge generation stack 30 can stabilize the PN junction.

[0360] Based on this, the holes in the space charge region will move upward and recombine with the electrons of the second light-emitting unit 40 (provided by the second electrode 50) to form excitons, and the electrons in the space charge region will move downward and recombine with the holes of the first light-emitting unit 20 (provided by the first electrode 10) to form excitons. The more the number of holes and electrons in the two layers of light-emitting units (the first light-emitting unit 20 and the second light-emitting unit 40) matches, the weaker the chance of holes and electrons being laterally transmitted and crosstalk being generated. That is, the charge generation stack 30 formed based on this can better improve the problem of lateral transmission of holes and electrons inside it, so as to solve the problem of color deviation of the display substrate 100.

[0361] For example, the lateral resistance value of the charge generation stack 30 is in the range of 100 GΩ / μm. 2～ 180GΩ / μm 2 When the doping concentration of the second impurity in the p-type charge generation layer 32 is in the range of 10% to 15%.

[0362] The lateral resistance of the charge generation stack 30 is less than 180 GΩ / μm 2 When the charge generation stack 30 has a lateral resistance value of 180 GΩ / μm 2～ 260GΩ / μm 2 At this time, a p-type charge generation layer 32 with a higher doping concentration of the second impurity can be selected to supplement the hole content of the space charge region in the charge generation stack 30 with the p-type charge generation layer 32. In turn, the space charge region in the charge generation stack 30 can stabilize the PN junction.

[0363] Based on this, the holes in the space charge region will move upward and recombine with the electrons of the second light-emitting unit 40 (provided by the second electrode 50) to form excitons, and the electrons in the space charge region will move downward and recombine with the holes of the first light-emitting unit 20 (provided by the first electrode 10) to form excitons. The more the number of holes and electrons in the two layers of light-emitting units (the first light-emitting unit 20 and the second light-emitting unit 40) matches, the weaker the chance of holes and electrons being laterally transmitted and crosstalk being generated. That is, the charge generation stack 30 formed based on this can better improve the problem of lateral transmission of holes and electrons inside it, so as to solve the problem of color deviation of the display substrate 100.

[0364] The above embodiments, in conjunction with the relevant drawings, introduce how to adjust the characteristics of the n-type charge generation layer 31, or how to make the n-type charge generation layer 31 and the p-type charge generation layer 32 cooperate with each other, so as to reduce the noise peak of the light emitted by the light-emitting device O and improve the color deviation problem of the display substrate 100. The following will mainly introduce, in conjunction with the relevant drawings, whether the single p-type charge generation layer 32 can reduce the noise peak of the light emitted by the light-emitting device O, and verify it.

[0365] Fig.42 is a spectrum diagram of a red light emitting device according to some further embodiments, Fig.43 is a spectrum diagram of a green light emitting device according to some further embodiments, Fig.44 Spectrum diagram of blue light emitting devices according to some other embodiments. Figure 42 to Figure 44 The following description is made by taking the grayscale of the light emitting device O in the display substrate 100 as a high grayscale (eg, 255 grayscales) and the n-type charge generation layer 31 as a first n-type charge generation layer as an example.

[0366] In some embodiments, in combination Figure 42 to Figure 44 As shown, the p-type charge generation layer 31 includes a first p-type charge generation layer and a second p-type charge generation layer, wherein the lateral resistance of the first p-type charge generation layer is greater than the lateral resistance of the second p-type charge generation layer.

[0367] When the n-type charge generation layer 31 is the first n-type charge generation layer, the charge generation layer 31 formed by the first n-type charge generation layer and the p-type charge generation layer (the first p-type charge generation layer or the second p-type charge generation layer) can make the lateral resistance value of the charge generation stack 30 range from 100 GΩ / μm. 2 ~260GΩ / μm 2 The charge generation stack 30 can effectively inhibit the holes and electrons in the charge generation stack 30 from being horizontally transmitted to the adjacent light emitting device O, thereby improving the color deviation problem of the display substrate 100 and preventing the life of the light emitting device O from being affected.

[0368] Continue to combine Figure 42 to Figure 44 As shown, since the lateral resistance of the first p-type charge generation layer is greater than the lateral resistance of the second p-type charge generation layer, when the first p-type charge generation layer is used, the lateral resistance of the charge generation stack 30 can be made larger, which can be beneficial to reduce the lateral leakage current generated in the charge generation stack 30 and better improve the color deviation problem of the display substrate 100.

[0369] For example, high grayscale (255 grayscale) is used as an example to introduce: Fig.42 As shown, the proportion of the noise peaks generated by the light-emitting device O in the first sub-pixel P1 (red) being affected by the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%. Fig.43 As shown, the proportion of the noise peak generated by the light-emitting device O in the second sub-pixel P2 (green) affected by the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%. Fig.44 As shown, the proportion of the noise peak generated by the light-emitting device O in the third sub-pixel P3 (blue) affected by the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the second sub-pixel P2 (green) is approximately 0%.

[0370] That is, among the light-emitting device O in the first sub-pixel P1 (red), the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue), the light-emitting device O in one sub-pixel P is affected by the light-emitting devices O in the other two sub-pixels P and the proportion of the noise peak generated is approximately 0%.

[0371] In summary, no matter the p-type charge generation layer 31 is the first p-type charge generation layer or the second p-type charge generation layer, the proportion of the impurity peak of the light emitted by the light-emitting device O can be reduced, thereby improving the color deviation problem of the display substrate 100.

[0372] Fig.45 is a spectrum diagram of a red light emitting device according to some further embodiments, Fig.46 is a spectrum diagram of a green light emitting device according to some further embodiments, Fig.47 Spectrum diagram of blue light emitting devices according to some further embodiments.

[0373] in, Figure 45 to Figure 47 The following description will be made by taking the grayscale of the light emitting device O in the display substrate 100 as a low grayscale (eg, grayscale 8) and the n-type charge generation layer 31 as a first n-type charge generation layer as an example.

[0374] Since the color shift phenomenon of the display substrate 100 in the low grayscale state is more obvious than that in the high grayscale state. Figure 42 to Figure 44On the basis of the above, the experiment is conducted by only changing the grayscale of the light emitting device O. Specifically, the grayscale of the light emitting device O in the display substrate 100 is low grayscale (for example, grayscale 8) as an example for description.

[0375] In some embodiments, in combination Figure 45 to Figure 47 As shown, when the p-type charge generation layer 31 selects the first p-type charge generation layer or the second p-type charge generation layer, the results of the proportion of the stray peaks of the light emitted by the light-emitting device O are similar. That is, when the p-type charge generation layer 31 selects the first p-type charge generation layer or the second p-type charge generation layer, there is no obvious difference in the proportion of the stray peaks of the light emitted by the light-emitting device O. Based on this, it can be known that in the low grayscale state, whether the p-type charge generation layer 31 selects the first p-type charge generation layer or the second p-type charge generation layer has no obvious difference in achieving the problem of improving the lateral crosstalk of the display substrate 100.

[0376] In summary, the charge generation stack 30 can select the first p-type charge generation layer or the second p-type charge generation layer at will when the first n-type charge generation layer is selected as the n-type charge generation layer 31. The first p-type charge generation layer has a better effect than the second p-type charge generation layer in a high grayscale state. However, in a low grayscale state, the effect is not obvious. Furthermore, when the first n-type charge generation layer is selected as the n-type charge generation layer 31, the second p-type charge generation layer can be selected to improve the color deviation problem of the display substrate 100.

[0377] Combined with the following table 4, Figure 42 to Figure 47 As shown, it can also be known that under 255 grayscales and 8 grayscales, when the n-type charge generation layer 31 selects the first n-type charge generation layer, and the p-type charge generation layer selects the first p-type charge generation layer or the second p-type charge generation layer, the difference in color coordinates is small, which can improve the improvement effect of the color deviation of the display substrate 100.

[0378] Table 4 shows the differences in color coordinates of different types of p-type charge generation layers at 255 grayscales and 8 grayscales.

[0379]

[0380] In the following Table 4, the light-emitting device O emitting red light and the light-emitting device O emitting green light are both differences on the X-axis (X coordinate axis in the color coordinate), and the light-emitting device O emitting blue light is the difference on the Y-axis (Y coordinate axis in the color coordinate).

[0381] In some embodiments, in combination Fig.14 As shown, the thickness of the p-type charge generation layer 32 ranges from

[0382] The thickness of the p-type charge generation layer 32 is set to Within the range, the n-type charge generation layer 31, the p-type charge generation layer 32 and other film layers in the light-emitting device O can cooperate with each other to form a microcavity structure, so as to improve the light-emitting effect of the light-emitting device O.

[0383] In some examples, the thickness of the p-type charge generation layer 32 ranges from The thickness of the p-type charge generation layer 32 is set to Within the range, the n-type charge generation layer 31, the p-type charge generation layer 32 and other film layers in the light-emitting device O can cooperate with each other to form a microcavity structure, so as to improve the light-emitting effect of the light-emitting device O.

[0384] For example, the thickness of the p-type charge generation layer 32 is approximately and However, the embodiments of the present disclosure are not limited thereto.

[0385] It should be noted that the thickness of the p-type charge generation layer 32 is approximately Taking the example as an example, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), the thickness error of the p-type charge generation layer 32 fluctuates within a range of When the thickness of the p-type charge generation layer 32 is equal to

[0386] In addition, in other examples, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), the thickness error of the p-type charge generation layer 32 fluctuates within a range of When the thickness of the p-type charge generation layer 32 is equal to

[0387] Fig.48 is a spectrum diagram of a red light emitting device according to some further embodiments, Fig.49 is a spectrum diagram of a green light emitting device according to some further embodiments, Fig.50 Spectrum diagram of blue light emitting devices according to some other embodiments. Figures 48 to 50 The following description is made by taking the grayscale of the light emitting device O in the display substrate 100 as a high grayscale (eg, 255 grayscale) and the n-type charge generation layer 31 as a second n-type charge generation layer.

[0388] Since the thickness of the n-type charge generation layer 31 is verified in the above embodiment, it is helpful to reduce the noise peak of the light of the light emitting device O. This embodiment further verifies whether the thickness of the p-type charge generation layer is helpful to reduce the noise peak of the light of the light emitting device O.

[0389] Based on this, in some embodiments, combined with Figures 48 to 50 As shown, in the case where the n-type charge generation layer 31 is the second n-type charge generation layer, an experiment is conducted based on the thickness of the P-type charge generation layer. Specifically, the thickness of the P-type charge generation layer is and Conduct experiments.

[0390] Combination Figures 48 to 50 As shown, when the n-type charge generation layer 31 is the second n-type charge generation layer, the P-type charge generation layer with different thicknesses has no obvious effect on reducing the noise peak of the light of the light emitting device O. That is, the thickness of the P-type charge generation layer does not play a decisive role in improving the color shift of the display substrate 100, and can be specifically set according to the requirements of the microcavity structure of the light emitting device O.

[0391] Fig.51 is a spectrum diagram of a red light emitting device according to some further embodiments, Fig.52 is a spectrum diagram of a green light emitting device according to some further embodiments, Fig.53 Spectrum diagram of blue light emitting devices according to some other embodiments. Figure 51 to Figure 53 Take the grayscale of the light emitting device O in the display substrate 100 as an example, which is a high grayscale (for example, 255 grayscales), and the n-type charge generation layer 31 is a first n-type charge generation layer for description.

[0392] In some embodiments, in combination Figure 51 to Figure 53 As shown, in the case where the n-type charge generation layer 31 is the first n-type charge generation layer, an experiment is conducted based on the thickness of the P-type charge generation layer. Specifically, the thickness of the P-type charge generation layer is and Conduct experiments.

[0393] Combination Figure 51 to Figure 53 As shown, when the n-type charge generation layer 31 is the first n-type charge generation layer, the P-type charge generation layer with different thicknesses has no obvious effect on reducing the noise peak of the light of the light emitting device O. That is, the thickness of the P-type charge generation layer does not play a decisive role in improving the color shift of the display substrate 100, and can be specifically set according to the requirements of the microcavity structure of the light emitting device O.

[0394] Fig.54 is a spectrum diagram of a red light emitting device according to some further embodiments, Fig.55 is a spectrum diagram of a green light emitting device according to some further embodiments, Fig.56 Spectrum diagram of blue light emitting devices according to some other embodiments. Figure 54 to Figure 56The following description will be made by taking the grayscale of the light emitting device O in the display substrate 100 as a low grayscale (eg, grayscale 8) and the n-type charge generation layer 31 as a first n-type charge generation layer as an example.

[0395] Since the color shift phenomenon of the display substrate 100 in the low grayscale state is more obvious than that in the high grayscale state. Figure 51 to Figure 53 On the basis of the above, the experiment is conducted by only changing the grayscale of the light emitting device O. Specifically, the grayscale of the light emitting device O in the display substrate 100 is low grayscale (for example, grayscale 8) as an example for description.

[0396] In some embodiments, in combination Figure 54 to Figure 56 As shown, in the case where the n-type charge generation layer 31 is the first n-type charge generation layer, an experiment is conducted based on the thickness of the P-type charge generation layer. Specifically, the thickness of the P-type charge generation layer is and Conduct experiments.

[0397] Combination Figure 51 to Figure 53 As shown, when the n-type charge generation layer 31 is the first n-type charge generation layer, the P-type charge generation layer with different thicknesses has no obvious effect on reducing the noise peak of the light of the light emitting device O. That is, the thickness of the P-type charge generation layer does not play a decisive role in improving the color shift of the display substrate 100, and can be specifically set according to the requirements of the microcavity structure of the light emitting device O.

[0398] Combined with the following table 5, Figure 51 to Figure 56 As shown, it can also be known that under 255 grayscale and 8 grayscale, when the n-type charge generation layer 31 is the first n-type charge generation layer, the difference in color coordinates under different thicknesses of the P-type charge generation layer is small, which can be beneficial to improving the color deviation improvement effect of the display substrate 100.

[0399] The red light emitting device O and the green light emitting device O are both differences on the X axis (the X coordinate axis in the color coordinate), and the blue light emitting device O is the difference on the Y axis (the Y coordinate axis in the color coordinate).

[0400] Table 5 shows the difference in color coordinates at different thicknesses of the p-type charge generation layer at 255 grayscale and 8 grayscale.

[0401]

[0402] In the above description, various parameters of the charge generation stack 30 are adjusted in combination with the related drawings to reduce the proportion of the stray peak of the light emitted by the light emitting device O and improve the color shift problem of the display substrate 100. The following will use another perspective to reduce the proportion of the stray peak of the light emitted by the light emitting device O by adjusting the minimum spacing between two adjacent sub-pixels P.

[0403] Fig.57 1 is a structural diagram of a display substrate according to some other embodiments.

[0404] In some embodiments, in combination Fig.57 As shown, along the first direction X, the minimum distance D between two adjacent sub-pixels P is greater than or equal to 19 μm.

[0405] Since the charge generation stacks 30 between two adjacent sub-pixels P along the first direction X are connected, the electrons and holes generated in the charge generation stacks 30 are easily transferred laterally to the charge generation stacks 30 in the adjacent sub-pixels P, resulting in the light emitted by the light-emitting device O having mixed peaks.

[0406] On this basis, the minimum spacing D between two adjacent sub-pixels P along the first direction X is set to be greater than or equal to 19μm, so that the minimum spacing between the charge generation stacks 30 in the light-emitting devices O in the two adjacent sub-pixels P can be greater than or equal to 19μm, so as to increase the path of the lateral transmission of holes and electrons in the charge generation stack 30, and thereby relatively increase the resistance to the lateral transmission of holes and electrons in the charge generation stack 30, so as to reduce the holes and electrons generated in the charge generation stack 30 of the light-emitting device O in one sub-pixel P of the two adjacent sub-pixels P, and move them laterally to the charge generation stack 30 of the light-emitting device O in the other sub-pixel P of the two adjacent sub-pixels P, so as to reduce lateral crosstalk.

[0407] When the minimum spacing D between two adjacent sub-pixels P along the first direction X is equal to or close to 19 μm, the minimum spacing between the charge generation stacks 30 in the light-emitting devices O in the two adjacent sub-pixels P can be made larger, that is, the path of lateral transmission of holes and electrons in the charge generation stacks 30 is increased to reduce lateral crosstalk. In addition, the problem of the minimum spacing between two adjacent sub-pixels P being too large and affecting the pixel aperture ratio of the display substrate 100 can also be prevented.

[0408] Fig.58 is a spectrum diagram of a red light emitting device according to some further embodiments, Fig.59 is a spectrum diagram of a green light emitting device according to some further embodiments, Fig.60 is a spectrum diagram of a blue light emitting device according to some other embodiments. Figures 58 to 60 The following description will be made by taking the grayscale of the light emitting device O in the display substrate 100 as a high grayscale (eg, 255 grayscales) as an example.

[0409] In some embodiments, in combination Figures 57 to 60 As shown, on the basis of keeping all parameters of the charge generation stack 30 unchanged, an experiment was conducted by adjusting the minimum spacing D between two adjacent sub-pixels P. Specifically, the spectrum diagrams when the minimum spacing D between two adjacent sub-pixels P is 20 μm and 23 μm are respectively illustrated.

[0410] Combination Figures 58 to 60 As shown, when the minimum spacing D between two adjacent sub-pixels P is 23 μm, relative to when the minimum spacing D between two adjacent sub-pixels P is 20 μm, the proportion of the stray peak of the light emitted by the light-emitting device O can be relatively smaller, which can be more conducive to improving the color deviation problem of the display substrate 100.

[0411] That is, on the basis that the parameters of the charge generation stack 30 remain unchanged, and along the first direction X, the minimum spacing D between two adjacent sub-pixels P is greater than or equal to 19 μm, the larger the minimum spacing D between two adjacent sub-pixels P, the smaller the proportion of the noise peak of the light emitted by the optical device O can be, which can be more conducive to improving the color deviation problem of the display substrate 100.

[0412] For example, high grayscale (255 grayscale) is used as an example to introduce: Fig.58 As shown, the proportion of the noise peaks generated by the light-emitting device O in the first sub-pixel P1 (red) being affected by the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%. Fig.59 As shown, the proportion of the noise peak generated by the light-emitting device O in the second sub-pixel P2 (green) affected by the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%. Fig.60 As shown, the proportion of the noise peak generated by the light-emitting device O in the third sub-pixel P3 (blue) affected by the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the second sub-pixel P2 (green) is approximately 0%.

[0413] That is, among the light-emitting device O in the first sub-pixel P1 (red), the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue), the light-emitting device O in one sub-pixel P is affected by the light-emitting devices O in the other two sub-pixels P and the proportion of the noise peak generated is approximately 0%.

[0414] In summary, no matter what color light is emitted by the light-emitting device O, when the minimum spacing D between two adjacent sub-pixels P is greater than or equal to 19 μm, the larger the minimum spacing D between two adjacent sub-pixels P is set, the smaller the proportion of the noise peaks in the light emitted by the optical device O can be, which can be more conducive to improving the color deviation problem of the display substrate 100.

[0415] Fig.61 is a spectrum diagram of a red light emitting device according to some further embodiments, Fig.62 is a spectrum diagram of a green light emitting device according to some further embodiments, Fig.63is a spectrum diagram of a blue light emitting device according to some other embodiments. Figure 61 to Figure 63 The following description will be made by taking the grayscale of the light emitting device O in the display substrate 100 as a low grayscale (eg, grayscale 8) as an example.

[0416] Since the color shift phenomenon of the display substrate 100 in the low grayscale state is more obvious than that in the high grayscale state. Figures 58 to 60 On the basis of the above, the experiment is conducted by only changing the grayscale of the light emitting device O. Specifically, the grayscale of the light emitting device O in the display substrate 100 is low grayscale (for example, grayscale 8) as an example for description.

[0417] Combination Figure 61 to Figure 63 As shown, it can be seen that in the low grayscale state, when the minimum spacing D between two adjacent sub-pixels P is greater than or equal to 19μm, the larger the minimum spacing D between two adjacent sub-pixels P is set, the smaller the proportion of the noise peak of the light emitted by the light-emitting device O can be, which can better solve the problem of color deviation of the display substrate 100.

[0418] Specific, combined Fig.61 As shown, the proportion of the noise peak generated by the light-emitting device O in the first sub-pixel P1 (red) being affected by the light-emitting device O in the second sub-pixel P2 (green) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%.

[0419] Combination Fig.62 As shown, the proportion of the noise peak generated by the light-emitting device O in the second sub-pixel P2 (green) being affected by the light-emitting device O in the first sub-pixel P1 (red) and the light-emitting device O in the third sub-pixel P3 (blue) is approximately 0%.

[0420] Combination Fig.63 As shown, the proportion of the impurity peak generated by the light-emitting device O in the third sub-pixel P3 (blue) being affected by the light-emitting device O in the first sub-pixel P1 (red) is less than or equal to 1.5%. The proportion of the impurity peak generated by the light-emitting device O in the third sub-pixel P3 (blue) being affected by the light-emitting device O in the second sub-pixel P2 (green) is less than or equal to 1.5%.

[0421] In summary, in the low grayscale state, the stray peaks of the light emitting device O emitting red light and the light emitting device O emitting green light are basically removed, while the light emitting device O emitting blue light still has a certain degree of stray peaks. However, the proportion of stray peaks of the light emitted by the light emitting device O emitting blue light can be made less than 4%, and the color deviation problem of the display substrate 100 can also be improved.

[0422] Furthermore, no matter what color light is emitted from the light emitting device O, when the minimum spacing D between two adjacent sub-pixels P is greater than or equal to 19 μm, the larger the minimum spacing D between two adjacent sub-pixels P is, the better the improvement effect of the color shift of the display substrate 100 can be.

[0423] Combined with the following table 6, Figures 58 to 63 It can also be known that under 255 grayscale and 8 grayscale, the difference in color coordinates under the minimum spacing D between two adjacent sub-pixels P is small, which can be beneficial to improving the color deviation improvement effect of the display substrate 100.

[0424] Table 6 shows the differences in color coordinates at the minimum distance D between two adjacent sub-pixels P at 255 grayscale and 8 grayscale.

[0425]

[0426] The red light emitting device O and the green light emitting device O are both differences on the X axis (the X coordinate axis in the color coordinate), and the blue light emitting device O is the difference on the Y axis (the Y coordinate axis in the color coordinate).

[0427] In some embodiments, in combination Fig.42 As shown, the minimum distance D between two adjacent sub-pixels P along the first direction X is less than or equal to 24 μm. This can prevent the minimum distance D between two adjacent sub-pixels P in the display substrate 100 from being too large, thereby reducing the aperture ratio of the display substrate 100 .

[0428] When the minimum spacing D between two adjacent sub-pixels P is equal to or close to 24 μm, the minimum spacing D between two adjacent sub-pixels P can be made larger, effectively hindering the lateral movement of holes and electrons in the charge generation layer 30, and also preventing the minimum spacing D from being too large, which would lead to a reduction in the aperture ratio of the display substrate 100.

[0429] In some embodiments, in combination Fig.57 As shown, along the first direction X, the minimum distance D between two adjacent sub-pixels P ranges from 19 μm to 24 μm.

[0430] When the minimum spacing D between two adjacent sub-pixels P is equal to or close to 19 μm, the minimum spacing between the charge generation stacks 30 in the light-emitting devices O in the two adjacent sub-pixels P can be made larger, that is, the path of lateral transmission of holes and electrons in the charge generation stacks 30 is increased to reduce lateral crosstalk. In addition, the problem of the minimum spacing between two adjacent sub-pixels P being too large, which affects the pixel aperture ratio of the display substrate 100, can also be prevented.

[0431] When the minimum spacing D between two adjacent sub-pixels P is equal to or close to 24 μm, the minimum spacing D between two adjacent sub-pixels P can be made larger, effectively hindering the lateral movement of holes and electrons in the charge generation layer 30, and also preventing the minimum spacing D from being too large, which would lead to a reduction in the aperture ratio of the display substrate 100.

[0432] In some examples, combined Fig.57 As shown, along the first direction X, the minimum distance D between two adjacent sub-pixels P ranges from 20 μm to 23 μm.

[0433] For example, along the first direction X, the minimum distance D between two adjacent sub-pixels P is approximately 19 μm, 20 μm, 21 μm, 22 μm, 23 μm or 24 μm. The embodiments of the present disclosure are not limited thereto.

[0434] It should be noted that, taking the example of the minimum spacing D between two adjacent sub-pixels P being approximately 19μm: due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error floating range of the minimum spacing D between two adjacent sub-pixels P fluctuates within the range of 10%×19μm, it can also be considered that the minimum spacing D between two adjacent sub-pixels P satisfies and is equal to 19μm.

[0435] In addition, in other examples, due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the error floating range of the minimum spacing D between two adjacent sub-pixels P fluctuates within the range of 5%×19μm, it can also be considered that the minimum spacing D between two adjacent sub-pixels P satisfies and is equal to 19μm.

[0436] In some embodiments, the return Fig.57 As shown, the plurality of sub-pixels P include a plurality of first sub-pixels P1, a plurality of second sub-pixels P2, and a plurality of third sub-pixels P3. The first sub-pixel P1, the second sub-pixel P2, and the third sub-pixel P3 emit three primary colors of light, respectively. For example, the first sub-pixel P1 may emit red light, the second sub-pixel P2 may emit green light, and the third sub-pixel P3 may emit blue light. That is, the first sub-pixel P1 may be a red sub-pixel, the second sub-pixel P2 may be a green sub-pixel, and the third sub-pixel P3 may be a blue sub-pixel. Among them, the size of the blue sub-pixel (the third sub-pixel P3) is larger than the size of any sub-pixel P in the plurality of first sub-pixels P1 and the plurality of second sub-pixels P2.

[0437] In some examples, the size of the blue sub-pixel (the third sub-pixel P3 ) is larger than the size of the red sub-pixel (the first sub-pixel P1 ).

[0438] In some examples, the size of the blue sub-pixel (the third sub-pixel P3 ) is larger than the size of the green sub-pixel (the second sub-pixel P2 ).

[0439] In some examples, the inventors have found through research that the brightness of the light-emitting device O in the blue sub-pixel (third sub-pixel P3) is lower than the brightness of the light-emitting device O in any one of the red sub-pixel (first sub-pixel P1) and the green sub-pixel (second sub-pixel P2). Based on this, the size of the blue sub-pixel (third sub-pixel P3) can be set to be larger than the size of the red sub-pixel (first sub-pixel P1), and the size of the blue sub-pixel (third sub-pixel P3) can be set to be larger than the size of the green sub-pixel (second sub-pixel P2).

[0440] Based on this, the size of the blue sub-pixel (third sub-pixel P3) can be increased to compensate for the low brightness of the light-emitting device O in the blue sub-pixel (third sub-pixel P3), which is beneficial to improving the display quality of the display substrate 100.

[0441] In some other examples, the sizes of the red sub-pixel (first sub-pixel P1) and the green sub-pixel (second sub-pixel P2) may be set accordingly based on the brightness difference between the red sub-pixel (first sub-pixel P1) and the green sub-pixel (second sub-pixel P2). The embodiments of the present disclosure are not limited thereto.

[0442] Fig.64 1 is a structural diagram of a light emitting device according to some further embodiments.

[0443] In some embodiments, see Fig.64 As shown, the light-emitting device O further includes a hole transport layer (HTL) 60 and an electron transport layer (ETL) 70. The hole transport layer 60 is located between the first electrode 10 and the first light-emitting unit 20, and the hole transport layer 60 can be used to improve the mobility of holes generated by the first electrode 10. The electron transport layer 70 is located between the second electrode 50 and the second light-emitting unit 40, and the electron transport layer 70 can be used to improve the mobility of electrons generated by the second electron.

[0444] The hole transport layer 60 and the electron transport layer 70 can be used in the light-emitting device O, so that the holes generated by the first electrode 10 and moving toward the first light-emitting unit 20 can be combined with the electrons generated by the charge generation stack 30 and moving toward the first light-emitting unit 20 to produce exciton luminescence in the first light-emitting unit 20, and the electrons generated by the second electrode 50 and moving toward the second light-emitting unit 40 can be combined with the vacancies generated by the charge generation stack 30 and moving toward the second light-emitting unit 40 to produce exciton luminescence in the second light-emitting unit 40.

[0445] In some other embodiments, the light emitting device O further includes a hole injection layer (HIL) and an electron injection layer (EIL). The hole injection layer may be located between the first electrode 10 and the hole transport layer 60 to reduce the potential barrier between the first electrode 10 and the hole transport layer 60, and the electron injection layer may be located between the second electrode 50 and the electron transport layer 70 to reduce the potential barrier between the second electrode 50 and the electron transport layer 70.

[0446] Based on this, after the first electrode 10 and the second electrode 50 of the light emitting device O receive a voltage, the first electrode 10 and the second electrode 50 form an electric field.

[0447] The first electrode 10 can generate positively charged holes under the action of the electric field, and the second electrode 50 can generate negatively charged electrons under the action of the electric field. At this time, the holes generated by the first electrode 10 can be injected into the hole transport layer 60 through the hole injection layer, and enter the first light-emitting unit 20 through the hole transport layer 60, and then can be combined with the electrons generated from the charge generation stack 30 in the first light-emitting unit 20 to form excitons, and the excitons return to the ground state through radiation transition and emit photons.

[0448] Accordingly, the electrons generated by the second electrode 50 can be injected into the electron transport layer 70 through the electron injection layer, and enter the second light-emitting unit 40 through the electron transport layer 70, and then can be combined with the holes generated from the charge generation stack 30 in the second light-emitting unit 40 to form excitons, and the excitons return to the ground state through radiation transition and emit photons. At this time, the light-emitting device O emits light.

[0449] Fig.65 1 is a structural diagram of a light emitting device according to some further embodiments.

[0450] In some embodiments, see Fig.65 As shown, the light emitting device O further includes a first hole blocking layer (HBL) 80 and a second hole blocking layer (HBL) 90. The first hole blocking layer 80 is located between the first light emitting unit 20 and the charge generation stack 30, and the second hole blocking layer 90 is located between the electron transport layer 70 and the second light emitting unit 40.

[0451] When the holes generated by the first electrode 10 migrate to the first light-emitting unit 20, due to the existence of the electric field, the holes will continue to migrate to the charge generation stack 30, resulting in a decrease in the hole concentration in the first light-emitting unit 20 and a decrease in the light-emitting effect. The first hole blocking layer 80 can prevent the holes from migrating from the first light-emitting unit 20 to the charge generation stack 30.

[0452] Accordingly, when the holes generated by the charge generation stack 30 migrate to the second light-emitting unit 40, due to the existence of the electric field, the holes will continue to migrate to the second electrode 50, resulting in a decrease in the hole concentration in the second light-emitting unit 40 and a decrease in the light-emitting effect. The second hole blocking layer 90 can prevent the holes from migrating from the second light-emitting unit 40 to the second electrode 50.

[0453] In some other embodiments, the light emitting device O further includes a first electron blocking layer (EBL) and a second electron blocking layer (EBL). The first electron blocking layer may be located between the first hole transport layer 60 and the first light emitting unit 20. The second electron blocking layer may be located between the second light emitting unit 40 and the second hole transport layer 70.

[0454] When the electrons generated by the charge generation stack 30 migrate to the first light-emitting unit 20, due to the existence of the electric field, the electrons will continue to migrate to the first electrode 10, resulting in a decrease in the electron concentration in the first light-emitting unit 20 and a decrease in the light-emitting effect. The first electron blocking layer can prevent electrons from migrating from the first light-emitting unit 20 to the first hole transport layer 60, that is, prevent electrons from migrating from the first light-emitting unit 20 to the first electrode 10.

[0455] Accordingly, when the electrons generated by the second electrode 50 migrate to the second light-emitting unit 40, due to the existence of the electric field, the electrons will continue to migrate to the charge generation stack 30, resulting in a decrease in the electron concentration in the second light-emitting unit 40 and a decrease in the light-emitting effect. The first electron blocking layer can prevent electrons from migrating from the second light-emitting unit 40 to the second hole transport layer 70, that is, prevent electrons from migrating from the second light-emitting unit 40 to the charge generation stack 30.

[0456] The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any changes or substitutions that can be thought of by any person skilled in the art within the technical scope disclosed in the present disclosure should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A display substrate, characterized in that: include: A plurality of sub-pixels arranged in a plurality of rows and columns, each of the sub-pixels comprising a light-emitting device, the light-emitting device comprising a first electrode, a first light-emitting unit, a charge generation stack, a second light-emitting unit, and a second electrode stacked in sequence; Among them, along the first direction, the colors of light emitted by the light-emitting devices in two adjacent sub-pixels are different, and the proportion of impurity peaks in the emission peaks in the emission spectrum corresponding to the light emitted by the light-emitting devices in at least some of the sub-pixels is less than or equal to 5%.

2. The display substrate according to claim 1, characterized in that: When the grayscale of the light-emitting device in the sub-pixel is higher than the threshold grayscale, the proportion of the impurity peak of the emission peak in the light-emitting spectrum corresponding to the light emitted by the light-emitting device in at least part of the sub-pixels is approximately 0%; When the grayscale of the light-emitting device in the sub-pixel is lower than the threshold grayscale, the proportion of the impurity peak of the emission peak in the light-emitting spectrum corresponding to the light emitted by the light-emitting device in at least part of the sub-pixels is less than or equal to 4%.

3. The display substrate according to claim 1, characterized in that: The lateral resistance of the charge generation stack is greater than or equal to 100 GΩ / μm 2 .

4. The display substrate according to claim 3, characterized in that: The lateral resistance of the charge generation stack is less than or equal to 260 GΩ / μm 2 .

5. The display substrate according to claim 1, characterized in that: The charge generation stack comprises an n-type charge generation layer and a p-type charge generation layer, wherein the p-type charge generation layer is located on a side of the n-type charge generation layer away from the first electrode; The charge generation stack is configured such that the n-type charge generation layer transfers electrons to the first light emitting unit and the p-type charge generation layer transfers holes to the second light emitting unit.

6. The display substrate according to claim 5, characterized in that: The minimum distance between the side of the n-type charge generation layer close to the p-type charge generation layer and the first light-emitting unit is smaller than the minimum distance between the side of the first electrode far from the first light-emitting unit and the first light-emitting unit.

7. The display substrate according to claim 6, characterized in that: The thickness of the n-type charge generation layer ranges from 8. The display substrate according to claim 7, characterized in that: The thickness of the n-type charge generation layer ranges from 9. The display substrate according to claim 5, characterized in that: The n-type charge generation layer is doped with a first impurity, and the doping concentration of the first impurity in the n-type charge generation layer has a value range of 0.5% to 2%.

10. The display substrate according to claim 9, characterized in that: The p-type charge generation layer is doped with a second impurity, and the doping concentration of the second impurity in the p-type charge generation layer is in a range of 5% to 15%.

11. The display substrate according to claim 10, characterized in that: When the doping concentration of the first impurity in the n-type charge generation layer is in the range of 0.5% to 1%, the doping concentration of the second impurity in the p-type charge generation layer is in the range of 10% to 15%; or, When the doping concentration of the first impurity in the n-type charge generation layer is in the range of 1% to 2%, the doping concentration of the second impurity in the p-type charge generation layer is in the range of 5% to 10%.

12. The display substrate according to claim 5, characterized in that: The lateral resistance value of the charge generation stack is in the range of 180 GΩ / μm 2～ 260GΩ / μm 2 When the doping concentration of the second impurity in the p-type charge generation layer is in the range of 5% to 10%; or, The lateral resistance value of the charge generation stack is in the range of 100 GΩ / μm 2～ 180GΩ / μm 2 When the doping concentration of the second impurity in the p-type charge generation layer is in the range of 10% to 15%.

13. The display substrate according to claim 1, characterized in that: Along the first direction, a minimum distance between two adjacent sub-pixels is greater than or equal to 19 μm.

14. The display substrate according to claim 13, characterized in that: Along the first direction, a minimum distance between two adjacent sub-pixels is less than or equal to 24 μm.

15. The display substrate according to claim 5, characterized in that: The thickness of the p-type charge generation stack ranges from 16. The display substrate according to claim 1, characterized in that: The light emitting device further comprises: a hole transport layer, located between the first electrode and the first light-emitting unit; and, The electron transport layer is located between the second electrode and the second light-emitting unit.

17. The display substrate according to claim 16, characterized in that: The light emitting device further comprises: A first hole blocking layer is located between the first light emitting unit and the charge generation stack; and, The second hole blocking layer is located between the electron transport layer and the second light emitting unit.

18. The display substrate according to claim 1, characterized in that: The plurality of sub-pixels include a plurality of first sub-pixels, a plurality of second sub-pixels, and a plurality of third sub-pixels emitting light of different colors; The third sub-pixel is a blue sub-pixel, and a size of the blue sub-pixel is greater than a size of any sub-pixel among the plurality of first sub-pixels and the plurality of second sub-pixels.

19. A display panel, characterized in that: include: The display substrate according to any one of claims 1 to 18.

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