Method for manufacturing display device and device for manufacturing display device

Abstract

The invention relates to a method for manufacturing a display device and a device for manufacturing the display device. The method includes: providing a display substrate, the display substrate including a base substrate having a pixel area and including a first surface and a second surface disposed opposite to each other; providing a donor substrate, the donor substrate comprising a base layer and a transfer layer, the transfer layer disposed on the base layer and comprising an organic material such that the transfer layer is spaced apart from the base substrate by a distance; aligning the donor substrate and the display substrate such that the transfer layer faces the first surface of the base substrate; and transferring the transfer layer to the display substrate by irradiating a laser on the second surface of the base substrate toward the donor substrate.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0086002 filed on July 3, 2023, in the Korean Intellectual Property Office (KIPO), the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present disclosure herein relates to an apparatus for manufacturing a display device using a donor substrate having a simplified configuration and a method for manufacturing the display device. Background Art

[0004] The organic light emitting element as a flat panel display element includes a first electrode, a second electrode and a functional layer between the first electrode and the second electrode, the functional layer includes at least an emission layer, and the organic light emitting element has advantageous features such as a wide viewing angle, a high contrast ratio and a fast response time, and is therefore considered to be a preferred choice for the next generation display element. In addition to the emission layer, the organic light emitting element may also include at least one functional layer among a hole injection layer, a hole transport layer, an electron transport layer and an electron injection layer.

[0005] In order to achieve full color in an organic light emitting element, it is necessary to pattern the organic layer. The patterning method may include a fine metal mask (FMM) method, a laser induced thermal imaging (LITI) method, or a laser induced patterned sublimation (LIPS) method. The LITI method and the LIPS method provide the advantages of finely patterning the organic layer, being applicable to a large area, and achieving high resolution. Summary of the invention

[0006] The present disclosure provides a method for manufacturing a display device using a donor substrate having a simplified configuration and an apparatus for manufacturing the display device.

[0007] In an embodiment of the present disclosure, a method for manufacturing a display device may include: providing a display substrate, the display substrate including a base substrate having a pixel area and including a first surface and a second surface placed back to back to each other; providing a donor substrate, the donor substrate including a base layer and a transfer layer arranged on the base layer and including an organic material, so that the transfer layer is separated from the base substrate by a certain distance; aligning the donor substrate and the display substrate so that the transfer layer faces the first surface of the base substrate; and transferring the transfer layer to the display substrate by irradiating a laser toward the donor substrate on the second surface of the base substrate.

[0008] In an embodiment, the laser may have a wavelength in a range of about 0.8 μm to about 20 μm.

[0009] In an embodiment, the base layer may include glass, aluminum oxide (Al 2 O 3 ) and at least one of aluminum oxynitride (AlON).

[0010] In an embodiment, the base layer may include a light-to-heat conversion material.

[0011] In an embodiment, the transfer layer may be directly disposed on the base layer.

[0012] In an embodiment, the base substrate may include silicon (Si), calcium fluoride (CaF 2 ), at least one of gallium arsenide (GaAs) and germanium (Ge).

[0013] In an embodiment, the transfer layer may include at least one of a hole transport material, a light emitting material, and an electron transport material.

[0014] In an embodiment, the display substrate may further include a metal pattern disposed on the base substrate and having an opening corresponding to the pixel area.

[0015] In exemplary embodiments, the metal pattern may include at least one of gold (Au), silver (Ag), tungsten (W), and titanium (Ti).

[0016] In an embodiment, after the transferring layer is transferred to the display substrate, an organic pattern may be formed in the opening.

[0017] In an embodiment, the method may further include removing the metal pattern after transferring the transfer layer to the display substrate.

[0018] In an embodiment, the display substrate may further include: a first electrode, disposed on the base substrate; and a pixel defining film, disposed on the first electrode, and the pixel defining film has a pixel opening overlapping with the pixel area in a plan view, and when the donor substrate and the display substrate are aligned, the donor substrate may be configured so that the transfer layer faces the first electrode.

[0019] In an embodiment, transferring the transfer layer to the display substrate may include: transferring a hole transport region to the first electrode; transferring an emission layer to the hole transport region; and transferring an electron transport region to the emission layer.

[0020] In an embodiment of the present disclosure, a method for manufacturing a display device may include: preparing a base substrate, defining a pixel area in the base substrate; forming a first electrode corresponding to the pixel area on a first surface of the base substrate; forming a pixel defining film on the first electrode, so that the pixel defining film exposes a portion of the first electrode; providing a donor substrate, the donor substrate including a base layer and a transfer layer directly provided on the base layer and including an organic material, so that the transfer layer faces the first electrode; and forming an organic pattern on the first electrode from the transfer layer by irradiating a laser toward the donor substrate on a second surface of the base substrate opposite to the first surface.

[0021] In embodiments, the base substrate and the donor substrate may be spaced apart from each other by a certain distance.

[0022] In an embodiment, the method may further include contacting the donor substrate with the base substrate before forming the organic pattern on the first electrode.

[0023] In an embodiment of the present disclosure, an apparatus for manufacturing a display device may include: a stage on which a display substrate having a pixel area is placed; a donor substrate, which is spaced apart from the display substrate and includes a base layer and a transfer layer disposed on the base layer and including an organic material; and a laser irradiation portion, which is spaced apart from the donor substrate and the display substrate is between the laser irradiation portion and the donor substrate, and the laser irradiation portion irradiates the donor substrate with laser on the display substrate.

[0024] In an embodiment, the laser irradiating part may include a vertical cavity surface emitting laser (VCSEL).

[0025] In an embodiment, the laser irradiation part may irradiate a portion of the donor substrate overlapping the pixel region in a plan view with the laser.

[0026] In an embodiment, the laser irradiation part may be continuously moved on the display substrate, and the laser irradiation part irradiates the donor substrate with the laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The accompanying drawings are included to provide a further understanding of the present disclosure and are incorporated into and constitute a part of this specification. The accompanying drawings illustrate embodiments of the present disclosure and together with the description serve to explain the principles of the present disclosure. In the drawings:

[0028] Figure 1 is a perspective view of a display device according to an embodiment of the present disclosure;

[0029] Figure 2 is a schematic cross-sectional view of a display device according to an embodiment of the present disclosure;

[0030] Figure 3 is a perspective view schematically showing an apparatus for manufacturing a display device according to an embodiment of the present disclosure;

[0031] Figure 4 is a flowchart illustrating a method for manufacturing a display device according to an embodiment of the present disclosure;

[0032] FIG. 5A to FIG. 5I is a view schematically illustrating some processes in a method for manufacturing a display device according to an embodiment of the present disclosure; and

[0033] FIG. 6A to FIG. 6D 2 is a view schematically illustrating some processes in a method for manufacturing a display device according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0034] When an element or layer is referred to as being "on" another element or layer, "connected to" or "coupled to" another element or layer, the element or layer may be directly on, directly connected to or directly coupled to the other element or layer, or there may be intervening elements or layers. However, when an element or layer is referred to as being "directly on" another element or layer, "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers. For this purpose, the term "connected" may refer to a physical connection, an electrical connection, and / or a fluid connection with or without intervening elements. In addition, when an element is referred to as "contacting" another element or "in contact with" another element, etc., the element may be "electrically in contact" or "physically in contact" with the other element; or "indirectly in contact" or "directly in contact" with the other element.

[0035] The use of cross hatching and / or shading in the drawings is generally provided to clarify the boundaries between adjacent elements. Therefore, unless otherwise stated, the presence or absence of cross hatching or shading does not convey or indicate any preference or requirement for a particular material, material properties, size, ratio, commonality between the elements shown, and / or any other features, attributes, characteristics, etc. of the elements. In addition, in the drawings, the size and relative size of the elements may be exaggerated for the purpose of clarity and / or description. When the embodiment can be implemented differently, the specific process sequence can be performed differently from the described sequence. For example, two processes described in succession can be performed substantially simultaneously or in an order opposite to the described sequence. Similarly, the same reference numerals and / or reference numerals represent the same elements.

[0036] It will be understood that although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, without departing from the teachings of the present disclosure, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element. Unless the context clearly indicates otherwise, singular forms are also intended to include plural forms.

[0037] For descriptive purposes, spatially relative terms such as "under," "below," "below," "down," "above," "up," "above," "higher," and "side" (e.g., as in "sidewall") may be used herein and thereby describe the relationship of one element to another element(s) as shown in the accompanying drawings. In addition to the orientations depicted in the accompanying drawings, spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture. For example, if the device is flipped in the accompanying drawings, elements described as "under" or "beneath" other elements or features will be oriented as "above" the other elements or features. Thus, the exemplary term "under" can encompass both above and below orientations. Furthermore, the device may be otherwise oriented (e.g., rotated 90 degrees or at other orientations), and therefore, the spatially relative descriptors used herein should be interpreted accordingly.

[0038] The terms used in this article are for the purpose of describing a particular embodiment, and are not intended to be limited. As used in this article, unless the context clearly states otherwise, the singular "one", "one (person / kind)" and "the (described)" are also intended to include plural forms. In addition, when used in this specification, the terms "include", "comprise", "contain", and / or "contain" illustrate the existence of stated features, integral bodies, steps, operations, elements, components and / or their groups, but do not exclude the existence or addition of one or more other features, integral bodies, steps, operations, elements, components and / or their groups. It should also be noted that, as used in this article, the terms "substantially (substantially)", "approximately (about)" and other similar terms are used as approximate terms rather than degree terms, and are therefore used to explain the inherent deviations of measured values, calculated values ​​and / or provided values ​​that will be recognized by those of ordinary skill in the art.

[0039] In the specification and claims, for the purposes of its meaning and interpretation, the phrase "at least one of..." is intended to include the meaning of "at least one of the group selected from..." For example, "at least one of A and B" may be understood to mean "A, B, or A and B". In the specification and claims, for the purposes of its meaning and interpretation, the term "and / or" is intended to include any combination of the terms "and" and "or". For example, "A and / or B" may be understood to mean "A, B, or A and B". The terms "and" and "or" may be used in a conjunction or disjunction sense and may be understood to be equivalent to "and / or".

[0040] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those of ordinary skill in the art to which the present disclosure belongs. In addition, unless explicitly defined as such herein, terms (such as those defined in general dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and should not be interpreted in an idealized or overly formal sense.

[0041] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings.

[0042] Figure 1 1 is a perspective view of a display device DD according to an embodiment of the present disclosure. The display device DD may generate an image and detect an external input. The display device DD may include a display area 100A and a peripheral area 100N. A pixel PX may be disposed in the display area 100A. The pixel PX may include a first color pixel, a second color pixel, and a third color pixel that generate light of different colors.

[0043] The display area 100A may display an image. The display area 100A may include a plane defined by a first direction DR1 and a second direction DR2. The display area 100A may also include curved surfaces bent from at least two sides of the plane, respectively. However, the shape of the display area 100A is not limited thereto. For example, the display area 100A may include only a plane, or the display area 100A may include curved surfaces bent from at least two sides (e.g., four sides) of the plane, respectively.

[0044] Figure 2 is a schematic cross-sectional view of a display device DD according to an embodiment of the present disclosure. Figure 2 A cross section corresponding to one pixel area PXA and a peripheral area NPXA adjacent thereto is schematically shown. Figure 2 The light emitting element LD and the transistor TFT connected thereto are schematically shown. The transistor TFT may be a pixel PX (see Figure 1) is one of a plurality of transistors included in a driving circuit of a TFT. In the embodiment, the transistor TFT is described as a silicon transistor, but the present disclosure is not limited thereto, and the transistor TFT may be a metal oxide transistor.

[0045] refer to Figure 2 , the display device DD may include a display panel 100 , an input sensor 200 , and an anti-reflector 300 .

[0046] The display panel 100 may be a light-emitting display panel, and for example, the display panel 100 may be an organic light-emitting display panel, an inorganic light-emitting display panel, a micro light-emitting diode (LED) display panel, or a nano LED display panel.

[0047] The display panel 100 may include a base substrate BL, a circuit layer 120 , a light emitting element layer 130 , and an encapsulation layer 140 .

[0048] The base substrate BL may provide a base surface on which the circuit layer 120 is disposed. The base substrate BL may be a rigid substrate or a flexible substrate that is bendable, foldable, or rollable, etc. The base substrate BL may be a glass substrate, a metal substrate, or a polymer substrate. However, the embodiments of the present disclosure are not limited thereto, and the base substrate BL may include an inorganic layer, an organic layer, or a composite material layer.

[0049] The base substrate BL may have a multi-layer structure. For example, the base substrate BL may include a first synthetic resin layer, a multi-layer or single-layer inorganic layer, and a second synthetic resin layer disposed on the multi-layer or single-layer inorganic layer. The first synthetic resin layer and the second synthetic resin layer may each include a polyimide-based resin, but the present disclosure is not particularly limited thereto.

[0050] The circuit layer 120 may be disposed on the base substrate BL. The circuit layer 120 may include an insulating layer, a semiconductor pattern, a conductive pattern, and a signal line. The circuit layer 120 may include Figure 1 The driving circuit of the pixel PX described in FIG.

[0051] The buffer layer 10br may be disposed on the base substrate BL. The buffer layer 10br may prevent metal atoms or impurities from diffusing from the base substrate BL into the semiconductor pattern. The semiconductor pattern may include an active region AC1 of the transistor TFT.

[0052] The back metal layer BMLa may be disposed under the transistor TFT. The back metal layer BMLa may block external light from reaching the transistor TFT. The back metal layer BMLa may be disposed between the base substrate BL and the buffer layer 10br. In an embodiment of the present disclosure, a barrier layer including an inorganic layer may also be disposed between the back metal layer BMLa and the buffer layer 10br. The back metal layer BMLa may be connected to an electrode or a wire, and may receive a constant voltage or a signal from the electrode or the wire.

[0053] The semiconductor pattern may be disposed on the buffer layer 10br. The semiconductor pattern may include a silicon semiconductor. For example, the silicon semiconductor may include amorphous silicon or polycrystalline silicon, etc. For example, the semiconductor pattern may include low temperature polycrystalline silicon.

[0054] The semiconductor pattern may include a first region having high conductivity and a second region having low conductivity. The first region may be doped with an N-type dopant or a P-type dopant. The P-type transistor may include a doped region doped with a P-type dopant, and the N-type transistor may include a doped region doped with an N-type dopant. The second region may be an undoped region, or may be doped at a concentration lower than that of the first region.

[0055] The first region has a greater conductivity than the second region and can be generally used as an electrode or a signal line. The second region can substantially correspond to an active region (or channel) of a transistor. For example, a portion of the semiconductor pattern can be an active region of a transistor, another portion of the semiconductor pattern can be a source or drain of the transistor, and the other portion of the semiconductor pattern can be a connecting electrode or a connecting signal line.

[0056] A source region SE1 (or source), an active region AC1 (or channel), and a drain region DE1 (or drain) of the transistor TFT may be formed from the semiconductor pattern. The source region SE1 and the drain region DE1 may extend in opposite directions from the active region AC1 in a cross-sectional view.

[0057] The first insulating layer 10 may be disposed on the buffer layer 10br. The first insulating layer 10 may be aligned with the plurality of pixels PX (see FIG. Figure 1 ) overlap in common and may cover the semiconductor pattern. The first insulating layer 10 may include an inorganic layer and / or an organic layer, and may have a single-layer or multi-layer structure. The inorganic layer may include at least one of aluminum oxide, titanium oxide, silicon oxide, silicon nitride, silicon oxynitride, zirconium oxide, and hafnium oxide. In an embodiment, the first insulating layer 10 may be a single-layer silicon oxide layer. In addition to the first insulating layer 10, the insulating layer of the circuit layer 120 to be described later may be an inorganic layer and / or an organic layer, and have a single-layer or multi-layer structure. The inorganic layer may include at least one of the above materials, but is not limited thereto.

[0058] The gate GT1 of the transistor TFT may be disposed on the first insulating layer 10. The gate GT1 may be a part of the metal pattern. In the cross-sectional view, the gate GT1 may overlap the active region AC1. In the process of doping the semiconductor pattern, the gate GT1 may be used as a mask. The gate GT1 may include at least one of titanium (Ti), silver (Ag), silver-containing alloys, molybdenum (Mo), molybdenum-containing alloys, aluminum (Al), aluminum-containing alloys, aluminum nitride (AlN), tungsten (W), tungsten nitride (WN), copper (Cu), indium tin oxide (ITO), and indium zinc oxide (IZO), but the present disclosure is not particularly limited thereto.

[0059] The second insulating layer 20 may be disposed on the first insulating layer 10 and may cover the gate GT1. The third insulating layer 30 may be disposed on the second insulating layer 20. The second electrode CE20 of the storage capacitor Cst may be disposed between the second insulating layer 20 and the third insulating layer 30. The first electrode CE10 of the storage capacitor Cst may be disposed between the first insulating layer 10 and the second insulating layer 20.

[0060] The first connection electrode CNE1 may be disposed on the third insulating layer 30. The first connection electrode CNE1 may be connected to the drain region DE1 of the transistor TFT through a contact hole passing through the first insulating layer 10, the second insulating layer 20, and the third insulating layer 30.

[0061] The fourth insulating layer 40 may be disposed on the third insulating layer 30. The second connection electrode CNE2 may be disposed on the fourth insulating layer 40. The second connection electrode CNE2 may be connected to the first connection electrode CNE1 through a contact hole passing through the fourth insulating layer 40. The fifth insulating layer 50 may be disposed on the fourth insulating layer 40 to cover the second connection electrode CNE2. The stacked structure of the first to fifth insulating layers 10 to 50 is presented only as an embodiment, and in addition to the first to fifth insulating layers 10 to 50, additional conductive layers and insulating layers may be further disposed.

[0062] Each of the fourth insulating layer 40 and the fifth insulating layer 50 may be an organic layer. For example, each of the fourth insulating layer 40 and the fifth insulating layer 50 may include at least one of a general polymer (such as polystyrene (PS)), benzocyclobutene (BCB), hexamethyldisiloxane (HMDSO), polymethyl methacrylate (PMMA), a polymer derivative having a phenol group, an acrylic polymer, an imide polymer (such as polyimide), an aryl ether polymer, an amide polymer, a fluorine polymer, a p-xylene polymer, a vinyl alcohol polymer, and a blend thereof.

[0063] The light emitting element layer 130 may be disposed on the circuit layer 120. The light emitting element layer 130 may include Figure 1The light emitting element of the pixel PX described in . For example, the light emitting element may include an organic light emitting material, an inorganic light emitting material, an organic-inorganic light emitting material, a quantum dot, a quantum rod, a micro LED or a nano LED.

[0064] The light emitting element LD may include a first electrode AE ​​(or pixel electrode), a hole transport region HTR, an emission layer EL, an electron transport region ETR, and a second electrode CE (or common electrode). The first electrode AE ​​may be disposed on the fifth insulating layer 50. The first electrode AE ​​may be a semi-transmissive reflective electrode, a transmissive electrode, or a reflective electrode. The first electrode AE1 may include: a reflective layer formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a compound thereof; and a transparent or semi-transparent electrode layer formed on the reflective layer. The transparent or semi-transparent electrode layer may include indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), zinc oxide (ZnO x , which can be ZnO or ZnO 2 ), indium oxide (In 2 O 3 ) and at least one of aluminum-doped zinc oxide (AZO). For example, the first electrode AE ​​may include a stack structure of ITO / Ag / ITO.

[0065] The pixel defining film PDL may be disposed on the fifth insulating layer 50. According to an embodiment, the pixel defining film PDL may have a light absorbing property, and for example, the pixel defining film PDL may be black. The pixel defining film PDL may include a black colorant. The black colorant may include a black dye and a black pigment. The black colorant may include carbon black, a metal such as chromium, or an oxide thereof. The pixel defining film PDL may correspond to a light blocking pattern having a light blocking property.

[0066] The pixel defining film PDL may cover a portion of the first electrode AE. For example, an opening PDL-OP exposing a portion of the first electrode AE ​​may be defined in the pixel defining film PDL.

[0067] The hole transport region HTR may be disposed on the first electrode AE ​​and the pixel defining film PDL. The hole transport region HTR may have a single layer formed of a single material, a single layer formed of different materials, or a multilayer structure having multiple layers formed of different materials. For example, the hole transport region HTR may have a single layer structure formed of a hole injection layer or a hole transport layer, or a single layer structure formed of a hole injection material and a hole transport material. In an embodiment, the hole transport region HTR may include a hole transport layer, and may also include a hole injection layer.

[0068] The emission layer EL may be disposed on the hole transport region HTR. The emission layer EL may include an organic material and / or an inorganic material. The emission layer EL may generate colored light. The emission layer EL may include an organic light emitting material or a quantum dot material.

[0069] The electron transport region ETR may be disposed on the emission layer EL and the hole transport region HTR. The electron transport region ETR may have a single layer formed of a single material, a single layer formed of different materials, or a multilayer structure having multiple layers formed of different materials. For example, the electron transport region ETR may have a single layer structure of an electron injection layer or an electron transport layer, or may have a single layer structure formed of an electron injection material and an electron transport material. The electron transport region ETR may have a single layer structure formed of different materials, or may include multiple layers stacked sequentially from the emission layer EL. In an embodiment, the electron transport region ETR may include an electron transport layer, and may also include an electron injection layer.

[0070] The encapsulation layer 140 may be disposed on the light emitting element layer 130. The encapsulation layer 140 may be used to protect the light emitting element layer 130 from foreign matter such as moisture, oxygen, and dust particles. The encapsulation layer 140 may include an inorganic layer 141, an organic layer 142, and an inorganic layer 143 stacked in sequence, but the layers forming the encapsulation layer 140 are not limited thereto.

[0071] The inorganic layers 141 and 143 may protect the light emitting element layer 130 from moisture and oxygen, and the organic layer 142 may protect the light emitting element layer 130 from foreign matter such as dust particles. The inorganic layers 141 and 143 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The organic layer 142 may include an acrylic organic layer, but the present disclosure is not limited thereto.

[0072] The input sensor 200 may be provided on the display panel 100. The input sensor 200 may detect an external input applied from the outside. The external input may be a user input. The user input may include various types of external inputs such as a user's body part, light, heat, a pen, or pressure.

[0073] The input sensor 200 may be formed on the display panel 100 by a roll-to-roll process. The input sensor 200 may be disposed (e.g., directly disposed) on the display panel 100. As used herein, "component B is directly disposed on component A" means that a third component is not disposed between component A and component B. For example, an adhesive layer may not be disposed between the input sensor 200 and the display panel 100.

[0074] The input sensor 200 may be disposed on the display panel 100. The input sensor 200 may include a sensor, an input sensing layer, or an input sensing panel. The input sensor 200 may include a sensor base layer 200-IL1, a first conductive layer 200-CL1, a first insulating layer 200-IL2, a second conductive layer 200-CL2, and a second insulating layer 200-IL3.

[0075] The sensor base layer 200-IL1 may be disposed (e.g., directly disposed) on the display panel 100. The sensor base layer 200-IL1 may be an inorganic layer including at least one of silicon nitride, silicon oxynitride, and silicon oxide. In another embodiment, the sensor base layer 200-IL1 may be an organic layer including an epoxy resin, an acrylic resin, or an imide resin. The sensor base layer 200-IL1 may have a single-layer structure or a multi-layer structure stacked in the third direction DR3.

[0076] The first conductive layer 200-CL1 and the second conductive layer 200-CL2 may each have a single layer structure or may each have a multilayer structure stacked in the third direction DR3. The first conductive layer 200-CL1 and the second conductive layer 200-CL2 may include conductive lines defining sensing electrodes in the form of a grid. In a plan view, the conductive lines may not overlap with the opening PDL-OP and may overlap with the pixel definition film PDL.

[0077] The first conductive layer 200-CL1 and the second conductive layer 200-CL2 having a single-layer structure may include a metal layer or a transparent conductive layer. The metal layer may include molybdenum, silver, titanium, copper, aluminum, or an alloy thereof. The transparent conductive layer may include an indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO x , which can be ZnO or ZnO 2 ) or indium zinc tin oxide (IZTO). The transparent conductive layer may include a conductive polymer such as PEDOT, metal nanowires, and graphene.

[0078] The first conductive layer 200-CL1 and the second conductive layer 200-CL2 having a multi-layer structure may include metal layers stacked in sequence. The metal layer may have a three-layer structure of, for example, titanium / aluminum / titanium. The first conductive layer 200-CL1 and the second conductive layer 200-CL2 may include at least one metal layer and at least one transparent conductive layer.

[0079] The first insulating layer 200-IL2 may be disposed between the first conductive layer 200-CL1 and the second conductive layer 200-CL2. The first insulating layer 200-IL2 may cover the first conductive layer 200-CL1 and may be disposed on the sensor base layer 200-IL1. The second insulating layer 200-IL3 may be disposed on the second conductive layer 200-CL2. The second insulating layer 200-IL3 may cover the second conductive layer 200-CL2 and may be disposed on the first insulating layer 200-IL2.

[0080] The first insulating layer 200-IL2 and the second insulating layer 200-IL3 may each independently include an inorganic film or an organic film. The inorganic film may include at least one of aluminum oxide, titanium oxide, silicon oxide, silicon nitride, silicon oxynitride, zirconium oxide, and hafnium oxide. The organic film may include at least one of acrylic resin, methacrylate resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, siloxane resin, polyimide resin, polyamide resin, and perylene resin.

[0081] The anti-reflector 300 may be disposed on the input sensor 200. The anti-reflector 300 may reduce the reflectivity of external light. The anti-reflector 300 may be disposed (eg, directly disposed) on the input sensor 200 through a roll-to-roll process. The anti-reflector 300 may include a light blocking pattern 310, a color filter 320, and a planarization layer 330.

[0082] The material constituting the light blocking pattern 310 is not particularly limited as long as the material absorbs light. The light blocking pattern 310 may be a black layer, and in an embodiment, the light blocking pattern 310 may include a black colorant. The black colorant may include a black dye and a black pigment. The black colorant may include carbon black, a metal such as chromium, or an oxide thereof. The light blocking pattern 310 may prevent external light from being reflected by the first conductive layer 200-CL1 and the second conductive layer 200-CL2.

[0083] In a plan view, the color filter 320 may overlap at least the pixel area PXA. In a plan view, the color filter 320 may also overlap the peripheral area NPXA. A portion of the color filter 320 may be disposed on the light blocking pattern 310. The color filter 320 may transmit the light generated from the light emitting element LD and block external light of some wavelength bands. Therefore, the color filter 320 may reduce the reflection of the first electrode AE ​​or the second electrode CE to external light. The color filter 320 may include a first color filter, a second color filter, and a third color filter corresponding to the first color pixel, the second color pixel, and the third color pixel, respectively.

[0084] The planarization layer 330 may cover the light blocking pattern 310 and the color filter 320. The planarization layer 330 may include an organic material, and the planarization layer 330 may provide a flat upper surface.

[0085] The anti-reflector 300 may reduce the reflectivity of light incident from the outside. The anti-reflector 300 may include a retarder and / or a polarizer. The anti-reflector 300 may include at least one polarizing film.

[0086] Despite Figure 2 Although not shown in the figure, the display device DD may further include a window (not shown). The window (not shown) may be provided on the anti-reflector 300.

[0087] Figure 3 Schematically shows a method for manufacturing a display device DD (see Figure 1 ) is a perspective view of an apparatus 400.

[0088] refer to Figure 3 , the apparatus 400 for manufacturing the display device DD may include a supporting portion 410, a first moving portion 420, a second moving portion 430, a third moving portion 440, a laser irradiation unit (or a laser irradiation portion) 450, and a control portion 460. The apparatus 400 for manufacturing the display device DD may include a stage ST disposed on the supporting portion 410, a display substrate SS placed on the stage ST, and a donor substrate DS facing the display substrate SS.

[0089] The support portion 410 may have a plane defined by a first direction DR1 and a second direction DR2 crossing the first direction DR1 .

[0090] The first moving part 420 , the second moving part 430 , the third moving part 440 , and the laser irradiation unit 450 may be disposed on the supporting part 410 .

[0091] The stage ST can form a display device DD (see Figure 1 ) in the manufacturing process. The stage ST may include a first fixing portion 413 and a second fixing portion 414. The display substrate SS may be provided on the first fixing portion 413, and the donor substrate DS may be provided on the second fixing portion 414. During the manufacturing process, the display substrate SS may be a display device DD (see Figure 1 ) and may be an object to which a transfer layer OL of a donor substrate DS, which will be described later, is transferred.

[0092] The display substrate SS may be placed on the first fixing portion 413, and the donor substrate DS may be placed on the second fixing portion 414. The second fixing portion 414 may have a plane defined by the first direction DR1 and the second direction DR2. Although not shown, the stage ST may further include an alignment mark for aligning the display substrate SS and the donor substrate DS.

[0093] The donor substrate DS may be disposed on the second fixing portion 414 to overlap with the display substrate SS in a plan view. The donor substrate DS may be spaced apart from the display substrate SS. The donor substrate DS may include a base layer BS (see Figure 5C ) and arranged on the base layer BS (see Figure 5C ) on the transfer layer OL (see Figure 5C ). The donor substrate DS will be described in detail later.

[0094] In an embodiment, the device 400 for manufacturing the display device DD may include a first guide portion 411 disposed on the support portion 410. The first guide portion 411 may extend in the second direction DR2. The first guide portion 411 may be provided in plurality, and the first guide portions 411 may be spaced apart from each other in the first direction DR1. Figure 3 As shown in , two first guide portions 411 may be provided, and the two first guide portions 411 are spaced apart from each other with the stage ST interposed therebetween. The extension length of each of the first guide portions 411 in the second direction DR2 may be at least greater than the length of the edge of the display substrate SS in the second direction DR2. The first guide portion 411 may guide the first moving portion 420 to perform linear motion along the extension direction of the first guide portion 411. The first guide portion 411 may include, for example, a linear motion track.

[0095] The first moving part 420 can be linearly moved back and forth in the second direction DR2. In an embodiment, the first moving part 420 may include a column member 420a and a horizontal member 420b. The column member 420a of the first moving part 420 may extend in a third direction DR3 intersecting each of the first direction DR1 and the second direction DR2. The column member 420a may be provided in a plurality. For example, two column members 420a may be provided, and the two column members 420a are arranged on both sides of the stage ST. The column members 420a may each move along the extension direction (e.g., the second direction DR2) of the first guide portion 411. In an embodiment, the column member 420a may perform linear motion manually or automatically using a motor cylinder or the like. For example, the column member 420a may include a linear motion block that moves along a linear motion track to automatically perform linear motion.

[0096] The horizontal member 420b of the first moving part 420 may be disposed between the column members 420a and connect the column members 420a. The horizontal member 420b may extend along the first direction DR1 between the column members 420a. The end of the horizontal member 420b may be connected to the upper portion of each of the column members 420a. However, the present disclosure is not limited to Figure 3 The structures and shapes of the column members 420a and the horizontal members 420b shown in FIG. Any structure and shape in which the first moving portion 420 linearly moves back and forth in the second direction DR2 may be adopted without limitation.

[0097] The second moving part 430 may perform linear motion in the first direction DR1. The second moving part 430 may be movably connected to one side of the horizontal member 420b of the first moving part 420. The horizontal member 420b of the first moving part 420 may include a first groove portion 421 extending in an extension direction (e.g., the first direction DR1) of the horizontal member 420b. The second moving part 430 may be disposed on one side of the horizontal member 420b where the first groove portion 421 is disposed. The first groove portion 421 may guide the second moving part 430 to move linearly back and forth along the extension direction of the first groove portion 421. The second moving part 430 may move linearly back and forth in the first direction DR1 along the first groove portion 421. The second moving part 430 may include a linear motor or the like.

[0098] The laser irradiation unit 450 may irradiate a laser beam in one direction. Figure 3 In the embodiment shown in , the laser beam emitted from the laser irradiation unit 450 may travel in the third direction DR3.

[0099] The laser irradiation unit 450 may be spaced apart from the donor substrate DS with the display substrate SS being located between the laser irradiation unit 450 and the donor substrate DS. The laser irradiation unit 450 may irradiate the display substrate SS disposed overlapping with the donor substrate DS with laser light. The laser irradiation unit 450 may irradiate the donor substrate DS with laser light on (or through) the display substrate SS.

[0100] Although not shown, the laser irradiation unit 450 may include a light source (not shown) that generates laser light and an optical system (not shown) that is disposed in the path of travel of the laser light. The light source (not shown) may generate laser light, and a solid-state riser laser such as a ruby ​​laser or a gas laser such as a helium-neon laser may be used. The optical system (not shown) may receive the laser light generated from the light source (not shown) and adjust the irradiation conditions of the laser light. For example, the shape and intensity of the laser light, the size of the spot, the irradiation angle, and the number of irradiations may be fine-tuned. The optical system (not shown) may include a homogenizer for homogenizing the shape of the laser light to shape the laser light into a desired shape, and may include a reflector that changes the angle of the laser light. The optical system (not shown) may include a combination of various lens groups such as a focusing lens or a polarizer.

[0101] In an embodiment, the laser irradiation unit 450 may include a vertical cavity surface emitting laser (VCSEL).

[0102] The laser light provided from the laser irradiation unit 450 may have a wavelength that can be transmitted without denaturing the organic material included in the transfer layer OL. For example, the laser light may have a wavelength in the range of about 0.8 μm to about 20 μm. In the case where the wavelength of the laser light satisfies the above range, the denaturation of the organic material included in the transfer layer OL may be minimized, and the base layer BS may easily absorb the laser light to allow efficient transfer.

[0103] The laser irradiation unit 450 may be disposed at one side of the second moving portion 430. The laser irradiation unit 450 may move with the movement of the first moving portion 420 and the second moving portion 430. For example, the first moving portion 420 and the second moving portion 430 may move the laser irradiation unit 450 in a direction intersecting the traveling direction of the laser. For example, the first moving portion 420 and the second moving portion 430 may move the laser irradiation unit 450 in the first direction DR1 and the second direction DR2. The moving range of the laser irradiation unit 450 may cover the area of ​​the supporting portion 410. Therefore, the laser irradiation unit 450 may irradiate the entire surface of the display substrate SS on the supporting portion 410 with a laser beam.

[0104] The control part 460 may be electrically connected to the first moving part 420 and the second moving part 430, and may control the position and movement of each of the first moving part 420 and the second moving part 430. The control part 460 may be electrically connected to the laser irradiation unit 450, and may control an irradiation time period and output of the laser irradiation unit 450, and the like.

[0105] In an embodiment, the device 400 for manufacturing the display device DD may include a second guide portion 412 disposed on the support portion 410. The second guide portion 412 may extend in the second direction DR2. The second guide portion 412 may be provided in plurality, and the second guide portions 412 may be spaced apart from each other in the first direction DR1. The second guide portion 412 may guide the third moving portion 440 to perform linear motion along the extension direction of the second guide portion 412. The second guide portion 412 may include a linear motion track.

[0106] The third moving part 440 may be linearly movable back and forth in the second direction DR2. The third moving part 440 may be movably connected to the second guide part 412. The third moving part 440 may be movable along the extension direction (e.g., the second direction DR2) of the second guide part 412. In an embodiment, the third moving part 440 may perform linear motion manually or automatically using a motor cylinder, etc. For example, the third moving part 440 may include a linear motion block that moves along a linear motion track to automatically perform linear motion.

[0107] The third moving portion 440 may be configured to relatively move the donor substrate DS on the second fixing portion 414 with respect to the display substrate SS. The second fixing portion 414 may be disposed on the third moving portion 440, and when the third moving portion 440 moves, the second fixing portion 414 may also move along the third moving portion 440. The display substrate SS may be fixed by the first fixing portion 413 disposed on the supporting portion 410. The first fixing portion 413 may include a chuck capable of fixing the donor substrate DS.

[0108] although Figure 3 An embodiment in which the display substrate SS is provided on the first fixing portion 413 and the donor substrate DS is provided on the second fixing portion 414 is schematically illustrated, but the present disclosure is not limited thereto. In another embodiment, the donor substrate DS may be provided on the first fixing portion 413, and the display substrate SS may be provided on the second fixing portion 414. The laser irradiation unit 450 may be disposed under the display substrate SS, and irradiate the donor substrate DS with laser light from under the display substrate SS. The second fixing portion 414 on which the display substrate SS is placed may be made of a material having a high transmittance for light emitted from the laser irradiation unit 450.

[0109] Figure 4 is a flowchart illustrating a method for manufacturing a display device DD according to an embodiment of the present disclosure. FIG. 5A to FIG. 5I 2 are views showing some processes in a method for manufacturing a display device DD according to an embodiment of the present disclosure. Figure 5H is with Figure 5GAA' corresponds to a schematic enlarged cross-sectional view of the portion. FIG. 5A to FIG. 5I In describing the method of manufacturing a display device according to the embodiment, the same components as those described above are given the same reference numerals, and a detailed description thereof will not be provided.

[0110] refer to Figure 4 , the method of manufacturing a display device according to an embodiment may include: providing a display substrate (S100); providing a donor substrate (S200); aligning the donor substrate and the display substrate (S300); and transferring a transfer layer to a base substrate (S400).

[0111] Figure 5A and Figure 5B 2 is a view showing a process of providing a display substrate SS. Figure 5A and Figure 5B The display substrate SS may include all substrates designed to form an organic pattern by a laser thermal transfer method. The display substrate SS may be a transfer layer OL (see FIG. 1 ) of a donor substrate DS in a transfer process (S400) to be described later. Figure 5C ) is transferred to the substrate. For example, during the manufacturing process, the display substrate SS can be a display device DD (see Figure 1 ) and may be a part of the light emitting element LD (see Figure 2 ). For example, the display substrate SS may include a base substrate BL and a circuit layer 120 disposed on the base substrate BL.

[0112] The pixel area PXA and the peripheral area NPXA adjacent to the pixel area PXA may be defined in the base substrate BL. The pixel area PXA may be an area divided by the pixel definition film PDL. The peripheral area NPXA may be an area between adjacent pixel areas PXA and may correspond to the pixel definition film PDL. In an embodiment, the pixel area PXA may correspond to an area in which the transfer layer OL is transferred from the donor substrate DS.

[0113] The base substrate BL may include a first surface SF1 and a second surface SF2 facing each other with respect to the third direction DR3. The first surface SF1 of the base substrate BL may be a portion facing the donor substrate DS in the transfer process (S400) to be described later. The second surface SF2 may face away from the first surface SF1 and may be a portion onto which the laser is incident.

[0114] The base substrate BL may include a material having high transmittance for light used in the transfer process (S400) to be described later. The base substrate BL may include a material having high transmittance for light from the above-mentioned laser irradiation unit 450 (see Figure 3) emitted by the laser. For example, the base substrate BL may include a material having a high transmittance to light having a central wavelength in the range of about 0.8 μm to about 20 μm. In an embodiment, the base substrate BL may include silicon (Si), calcium fluoride (CaF 2 ), at least one of gallium arsenide (GaAs) and germanium (Ge).

[0115] The display substrate SS may further include a first electrode AE ​​disposed on the first surface SF1 of the base substrate BL. The first electrode AE ​​may be disposed on the circuit layer 120. The first electrode AE ​​may be disposed to overlap the pixel area PXA in a plan view. The display substrate SS may further include a pixel defining film PDL disposed on the first electrode AE ​​of the display substrate SS. A pixel opening PDL-OP exposing a portion of the first electrode AE ​​may be defined in the pixel defining film PDL.

[0116] Figure 5C A view showing a process of providing a donor substrate DS. Figure 5C The donor substrate DS may include a base layer BS and a transfer layer OL disposed on the base layer BS. The base layer BS may have a bearing capacity sufficient to support the transfer layer OL and may have a high absorptivity with respect to light of a certain wavelength. The base layer BS may include a substrate for receiving the laser irradiation unit 450 (see FIG. Figure 3 ) has a high absorption rate for the laser light emitted and has photothermal conversion properties.

[0117] The base layer BS may include a light-to-heat conversion material. The base layer BS may include a material having excellent light-to-heat conversion properties. In an embodiment, the base layer BS may include glass, aluminum oxide (Al 2 O 3 ) and aluminum oxynitride (AlON). For example, the base layer BS may be made of glass, aluminum oxide (Al 2 O 3 ) and aluminum oxynitride (AlON). The base layer BS may include glass, aluminum oxide (Al 2 O 3 ) and aluminum oxynitride (AlON), and thus can be used for the transfer process (S400) (see Figure 4 ) has a high absorption rate, and therefore, even without providing a separate light conversion layer, the base layer BS can absorb the laser and transfer heat energy to the transfer layer OL, resulting in a simplified structure of the donor substrate DS. The simplified structure of the donor substrate DS can reduce the manufacturing cost of the display device and provide an advantage for manufacturing a large-area display device.

[0118] The transfer layer OL may be disposed on the base layer BS. In an embodiment, the transfer layer OL may be disposed (e.g., directly disposed) on the base layer BS. The upper surface of the base layer BS may contact the lower surface of the transfer layer OL. A separate layer may not be disposed between the base layer BS and the transfer layer OL. In an embodiment, the donor substrate DS may be formed of the base layer BS and the transfer layer OL disposed on the base layer BS.

[0119] The transfer layer OL may include an organic material. The organic material included in the transfer layer OL may be used to form a light emitting element LD on the display substrate SS (see FIG. Figure 2 ) functional layer. Display device DD (see Figure 2 ) of the light emitting element LD (see Figure 2 ) may include a first electrode AE ​​(see Figure 2 ) and the second electrode CE (see Figure 2 ) between at least one functional layer, and at least one functional layer can be formed from the transfer layer OL. For example, the light emitting element LD (see Figure 2 ) may include a hole transport region HTR (see Figure 2 ), emission layer EL (see Figure 2 ) and the electron transport region ETR (see Figure 2 ), and the hole transport region HTR (see Figure 2 ), emission layer EL (see Figure 2 ) and the electron transport region ETR (see Figure 2 ) can be formed from the transfer layer OL.

[0120] The transfer layer OL may be a layer that can be evaporated or sublimated by heat generated from the base layer BS, and may include at least one of a hole transport material, a light emitting material, and a hole injection material. Figure 2 ), emission layer EL (see Figure 2 ) and the electron transport region ETR (see Figure 2 ) may include the same material.

[0121] Figure 5D to Figure 5G is a view illustrating a process of aligning a display substrate with a donor substrate ( S300 ) and a process of transferring a transfer layer to a base substrate ( S400 ).

[0122] Reference together Figure 4 , Figure 5B , Figure 5D and Figure 5E, the display substrate SS and the donor substrate DS may be aligned (S300). The donor substrate DS and the display substrate SS may be aligned so that the transfer layer OL of the donor substrate DS faces the display substrate SS. For example, the display substrate SS and the donor substrate DS may be aligned so that the transfer layer OL of the donor substrate DS faces the first electrode AE ​​of the display substrate SS. The third moving part 440 (see Figure 3 ) can be used to align the display substrate SS and the donor substrate DS.

[0123] After aligning the display substrate SS and the donor substrate DS (S300), irradiating the donor substrate DS with the laser LS on the display substrate SS may be performed. Irradiation of the laser LS may be performed on the second surface SF2 of the base substrate BL to transfer the transfer layer OL onto the first electrode AE.

[0124] refer to Figure 5D When the donor substrate DS is irradiated with laser light LS, a laser irradiation unit 450 (see Figure 3 ). The laser irradiation unit 450 may irradiate the donor substrate DS with the laser LS at one side of the display substrate SS spaced apart from the donor substrate DS. The laser irradiation unit 450 may have a resolution of a pixel unit or less to form a pixel area PXA (see Figure 5B ) corresponding pattern.

[0125] The laser irradiation unit 450 may be spaced apart from the donor substrate DS with the display substrate SS interposed therebetween. The laser irradiation unit 450 may irradiate the donor substrate DS with the laser LS while moving on the display substrate SS.

[0126] The laser irradiation unit 450 may partially irradiate only the area where the transfer layer OL should be transferred on the display substrate SS with the laser LS. The display substrate SS where the transferred organic pattern OP (see FIG. 1 ) should be formed may be irradiated with the laser LS. Fig. 5F ) portion. For example, the laser irradiation unit 450 may irradiate only the portion of the display substrate SS that is adjacent to the pixel area PXA (see FIG. 1 ) in a plan view with the laser LS. Figure 5B ) overlapping part.

[0127] The laser light LS may pass through the display substrate SS and the transfer layer OL to reach the base layer BS. When the laser light LS is incident on the base layer BS, the base layer BS may partially absorb the laser light LS and convert a portion of the absorbed light into heat. The portion of the donor substrate DS that is adjacent to the pixel area PXA (see FIG. 1 ) in a plan view may be irradiated with the laser light LS. Figure 5B) overlapped with the donor substrate DS, and heat may be selectively generated in a portion of the base layer BS overlapping with the pixel area PXA in a plan view. The heat generated from the base layer BS is transferred to the transfer layer OL, and the transfer layer OL in the area irradiated with the laser LS may be vaporized or sublimated and transferred to the display substrate SS. The organic material included in the transfer layer OL separated from the donor substrate DS may be transferred onto the first electrode AE.

[0128] The laser light LS provided from the laser irradiation unit 450 may have a wavelength in the infrared region. For example, the laser light LS may have a wavelength in the range of about 0.8 μm to about 20 μm. In the case where the wavelength of the laser light LS satisfies the above range, the degeneration of the organic material included in the transfer layer OL may be minimized, and the base layer BS may easily absorb the laser light LS to allow efficient transfer.

[0129] refer to Figure 5E , the laser irradiation unit 450-a may be a vertical cavity surface emitting laser. The laser irradiation unit 450-a may be designed to be based on the pixel area PXA (see Figure 5B ) between the intervals between the laser device irradiating the laser LS. For example, the laser irradiation unit 450-a can be configured to perform irradiation of the laser LS according to the intervals between the pixel areas PXA (see Figure 5B ) are simultaneously irradiated with laser light LS at intervals between the two pixels. The intervals may be different depending on the purpose of the light emitting element LD. For example, in the case where the light emitting element LD is used as a backlight light emitting element, the pixel area PXA (see Figure 5B ) may each have one interval, and in the case where the light emitting element LD uses different organic materials for red, green, and blue, a single pixel area PXA (see Figure 5B ) can have an interval.

[0130] In an embodiment, transferring the transfer layer to the base substrate (S400) may be performed under the condition that the display substrate SS and the donor substrate DS are spaced a certain distance from each other. For example, irradiation of the laser LS may be performed under the condition that the transfer layer OL of the donor substrate DS is spaced a certain distance from the base substrate BL of the display substrate SS. Since the transfer is performed while the display substrate SS and the donor substrate DS are spaced a certain distance from each other, a process of stacking the donor substrate DS and the display substrate SS may not be required, and undesired attachment or detachment of the transfer layer OL that may occur in the process of separating the donor substrate DS and the display substrate SS may be prevented. However, the present disclosure is not limited thereto, and the method for manufacturing a display device of an embodiment may further include: before transferring the transfer layer to the base substrate (S400), stacking the donor substrate DS from the display substrate SS. For example, with Figure 5D and Figure 5EUnlike that shown in , the donor substrate DS may be irradiated with the laser LS under the condition that the donor substrate DS is in contact with the display substrate SS, and separation of the donor substrate DS and the display substrate SS may be performed after the transfer process.

[0131] refer to Fig. 5F and Figure 5G When the transfer layer is transferred to the base substrate (S400), the transfer layer OL may be transferred to the first electrode AE ​​to form an organic pattern OP. Figure 5D and Figure 5E )The irradiated portion may remain on the donor substrate DS.

[0132] refer to Figure 5G , Figure 5H and Fig.5I , the organic pattern OP may correspond to the hole transport region HTR. However, the present disclosure is not limited thereto, and the organic pattern OP may correspond to the emission layer EL or the electron transport region ETR.

[0133] refer to Figure 4 , Figure 5H and Fig.5I , transferring the transfer layer to the display substrate (S400) may include: transferring the hole transport region HTR to the first electrode AE; transferring the emission layer EL to the hole transport region HTR; and transferring the electron transport region ETR to the emission layer EL. Fig.5I As shown in FIG, after the hole transport region HTR is transferred onto the first electrode AE, the transfer of the emission layer EL and the transfer of the electron transport region ETR may be sequentially performed. Figure 5C ) on which a first transfer layer including a light emitting material is formed, and the display substrate SS on which the hole transport region HTR is formed may be rearranged, and irradiation of laser LS may be selectively performed to transfer the first transfer layer onto the hole transport region HTR. Then, the substrate BS (see Figure 5C ), another donor substrate on which a second transfer layer including an electron transport material is formed is prepared, and the display substrate SS on which the emission layer EL is formed can be rearranged, and irradiation of laser LS can be selectively performed to transfer the second transfer layer to the emission layer EL. However, the present disclosure is not limited thereto, and in the case where the transfer layer OL includes a hole transport material, a light emitting material, and an electron transport material at the same time, the hole transport region HTR, the emission layer EL, and the electron transport region ETR can be collectively transferred to the first electrode AE.

[0134] Typical methods such as the LITI method and the LIPS method are characterized in that a laser beam is emitted from the back side of a donor substrate including an organic layer, and therefore the donor substrate may need to have high transmittance to the light source, and a light-to-heat conversion layer may inevitably be additionally introduced to convert light energy into heat energy. As a result, the introduction of an additional structure may lead to an increase in the manufacturing cost of the donor substrate, and in the case where the light source is emitted from the back side of a complex donor substrate, scattering at the interface may lead to light loss.

[0135] According to an embodiment of the present disclosure, light having high transmittance for organic materials can be emitted from the back side of the display substrate to allow patterning in units of pixels without concerns about degradation of the transfer layer of the donor substrate, and a donor substrate whose configuration is simplified by designing the base layer itself to have light-to-heat conversion characteristics can be used. Therefore, the manufacturing cost of the donor substrate can be prevented from rising, and light loss caused by scattering at the interface between layers when the light source is incident from the back side of a typical donor substrate can be prevented. When the light source is emitted from the back side of the display substrate, the absorption of the light source by the base layer can be minimized in the transfer process to prevent degradation of the base layer.

[0136] FIG. 6A to FIG. 6D FIG. 1 is a diagram showing a method of manufacturing a display device DD (see FIG. 1 ) according to an embodiment of the present disclosure. Figure 1 ) are schematic cross-sectional views of some processes in the method. FIG. 6A to FIG. 6D In describing the method of manufacturing a display device according to the embodiment, the same components as those described above are assigned the same reference numerals, and a detailed description thereof will not be provided.

[0137] FIG. 6A to FIG. 6D The method for manufacturing a display device DD shown in the reference FIG. 5A to FIG. 5I The described method for manufacturing a display device is different in that the display substrate SS provided in the transfer process may further include a metal pattern MP.

[0138] refer to Fig. 6A The display substrate SS-a may further include a metal pattern MP disposed on the base substrate BL. The metal pattern MP may be a film having an appropriate reflectivity for laser light and may reflect the laser light LS emitted to the display substrate SS-a (see Figure 6B ). The metal pattern MP may be disposed on the first surface SF1 of the base substrate BL. The first surface SF1 of the base substrate BL may be a portion facing the donor substrate DS in a transfer process to be described later. The second surface SF2 may be opposite to the first surface SF1 and may be a portion where the laser LS is incident. For ease of description, FIG. 6A to FIG. 6D It is shown that no separate layer is provided between the base substrate BL and the metal pattern MP, but the present disclosure is not limited thereto. Figure 5BAs shown in , the display substrate SS-a may include at least one of a circuit layer 120, a first electrode AE, and a pixel definition film PDL disposed on a base substrate BL. The metal pattern MP may be disposed on the circuit layer 120 or may be disposed on the pixel definition film PDL.

[0139] The opening MOP may be defined in the metal pattern MP. Fig. 6A Unlike that shown in , the opening MOP may be provided in plurality. The portion of the display substrate SS-a in which the metal pattern MP is formed may be defined as a reflective area NTA, and the portion of the display substrate SS-a in which the metal pattern MP is not formed (e.g., the portion in which the opening MOP is defined) may be defined as a transmissive area TA. The transmissive area TA may correspond to a portion transferred to the transfer layer OL through the donor substrate DS. The reflective area NTA may correspond to a non-transfer area. In an embodiment, the opening MOP may be at least adjacent to the pixel area PXA (see FIG. 1 ) in a plan view. Figure 5B )overlapping.

[0140] The metal pattern MP may include a metal having a high reflectivity with respect to light. In an embodiment, the metal pattern MP may include at least one of gold (Au), silver (Ag), tungsten (W), and titanium (Ti). For example, the metal pattern MP may be formed of at least one of gold (Au), silver (Ag), tungsten (W), and titanium (Ti).

[0141] The base layer BS may absorb laser light incident on the transmission area of ​​the display substrate SS-a and convert the laser light into heat. The transfer layer OL may be disposed on the base layer BS. The transfer layer OL may be formed in both the transmission area TA and the reflection area NTA.

[0142] refer to Figure 6B and Figure 6C , alignment of the display substrate SS-a and the donor substrate DS may be performed. The donor substrate DS and the display substrate SS-a may be aligned so that the transfer layer OL of the donor substrate DS faces the display substrate SS-a. For example, the display substrate SS-a and the donor substrate DS may be aligned so that the transfer layer OL of the donor substrate DS faces the metal pattern MP of the display substrate SS-a.

[0143] After aligning the display substrate SS-a with the donor substrate DS, irradiating the donor substrate DS with laser LS on the display substrate SS-a may be performed. Irradiation of the laser LS may be performed on the second surface SF2 of the base substrate BL to transfer the transfer layer OL to the display substrate SS-a.

[0144] The entire surface of the display substrate SS-a may be irradiated with the laser LS. For example, the laser irradiation unit 450 may be continuously moved on the display substrate SS-a and may irradiate the donor substrate DS with the laser LS. Thus, the entire second surface SF2 of the base substrate BL may be irradiated with the laser LS.

[0145] refer to FIG. 6B to FIG. 6D , the portion of the base layer BS that does not overlap with the metal pattern MP in a plan view may be irradiated with the laser LS, and the portion of the base layer BS that overlaps with the metal pattern MP in a plan view may not be irradiated with the laser LS. Figure 6B As shown in FIG. , the laser light LS incident on the reflective area NTA through the second surface SF2 of the base substrate BL may be reflected by the metal pattern MP. The laser light LS incident on the transmissive area TA through the second surface SF2 of the base substrate BL may be incident on the donor substrate DS. The laser light LS incident on the transmissive area TA may pass through the transfer layer OL and be transmitted to the base layer BS. The portion of the base layer BS overlapping the transmissive area TA in a plan view may absorb the laser light LS and convert a portion of the laser light LS into thermal energy. The transfer layer OL may evaporate or sublimate by the generated heat and be transferred to the display substrate SS-a. The transfer layer OL may be transferred through the opening MOP corresponding to the transmissive area TA. The transfer layer OL of the donor substrate DS may include a first portion overlapping the metal pattern MP in a plan view and a second portion not overlapping the metal pattern MP, and after the irradiation of the laser light LS, the second portion of the transfer layer OL may be transferred to the base substrate BL, and the first portion of the transfer layer OL may remain on the base layer BS without being transferred. The organic material included in the transfer layer OL may be evaporated or sublimated by heat generated by the irradiation of the laser LS and may be deposited in the opening MOP to form the organic pattern OP.

[0146] Only the portion of the donor substrate DS corresponding to the transmission area TA can be irradiated with the laser LS. Therefore, even in the case where the laser LS is transmitted collectively on the display substrate SS-a, only the portion corresponding to the transfer area can be selectively transferred without scanning the laser LS to correspond to the transfer area while aligning the laser LS, resulting in improved process efficiency. By simply transmitting the laser on the second surface SF2 of the base substrate BL without separating a specific area, the transfer layer OL can be transferred to the transmission area TA corresponding to the transfer area, thereby reducing the process time for manufacturing the display device. For example, an organic pattern can be formed collectively in the transfer area by a single process, and thus the time required for manufacturing can be reduced to improve process efficiency. According to an embodiment of the present disclosure, an organic pattern can be formed in the target transfer area even in the case where the entire display substrate SS-a is transferred, and thus the process efficiency can be improved.

[0147] The metal pattern MP may be used in a display device DD (see FIG. Figure 1 ) is used as an electrode. For example, the metal pattern MP can be used as a light emitting element LD (see Figure 2 ) of the second electrode CE (see Figure 2 ). However, the present disclosure is not limited thereto, and the metal pattern MP may be removed from the display substrate SS-a after the transfer process.

[0148] According to an embodiment of the present disclosure, an apparatus for manufacturing a display device and a method for manufacturing a display device are provided, which are capable of patterning an organic material on a donor substrate using a donor substrate having a simplified configuration without worrying about the degeneration of the organic material in an area irradiated by a light source and improving cost-effectiveness.

[0149] The above description is an example of the technical features of the present disclosure, and those skilled in the art to which the present disclosure belongs will be able to make various modifications and changes.Therefore, the embodiments of the present disclosure described above can be implemented individually or in combination with each other.

[0150] Therefore, the embodiments disclosed in the present disclosure are not intended to limit the technical spirit of the present disclosure, but to describe the technical spirit of the present disclosure, and the scope of the technical spirit of the present disclosure is not limited by these embodiments. The protection scope of the present disclosure should be interpreted by the accompanying claims, and should be interpreted as all technical spirits within the scope of equivalents are included in the scope of the present disclosure.

Claims

1. A method for manufacturing a display device, wherein: The method comprises: Providing a display substrate, the display substrate comprising a base substrate having a pixel region and comprising a first surface and a second surface disposed back to back with each other; providing a donor substrate, the donor substrate comprising a base layer and a transfer layer, the transfer layer being disposed on the base layer and comprising an organic material, such that the transfer layer is spaced a certain distance from the base substrate; aligning the donor substrate and the display substrate so that the transfer layer faces the first surface of the base substrate; and The transfer layer is transferred to the display substrate by irradiating laser on the second surface of the base substrate toward the donor substrate.

2. The method according to claim 1, wherein: The laser has a wavelength in the range of 0.8 μm to 20 μm.

3. The method according to claim 1, wherein: The base layer includes at least one of glass, aluminum oxide, and aluminum oxynitride.

4. The method according to claim 1, wherein: The base layer includes a light-to-heat conversion material.

5. The method according to claim 1, wherein: The transfer layer is directly disposed on the base layer.

6. The method according to claim 1, wherein: The base substrate includes at least one of silicon, calcium fluoride, gallium arsenide, and germanium.

7. The method according to claim 1, wherein: The transfer layer includes at least one of a hole transport material, a light emitting material, and an electron transport material.

8. The method according to claim 1, wherein: The display substrate further includes a metal pattern disposed on the base substrate and having an opening corresponding to the pixel area.

9. The method according to claim 8, wherein: The metal pattern includes at least one of gold, silver, tungsten and titanium.

10. The method according to claim 8, wherein: After the transfer layer is transferred to the display substrate, an organic pattern is formed in the opening.

11. The method according to claim 8, wherein: The method further comprises: After transferring the transfer layer to the display substrate, the metal pattern is removed.

12. The method according to claim 1, wherein: The display substrate further comprises: A first electrode is disposed on the base substrate; and a pixel defining film disposed on the first electrode, wherein the pixel defining film has a pixel opening overlapping the pixel region in a plan view, and In the aligning the donor substrate and the display substrate, the donor substrate is disposed so that the transfer layer faces the first electrode.

13. The method according to claim 12, wherein: The transferring the transfer layer to the display substrate comprises: transferring the hole transport region onto the first electrode; transferring an emissive layer onto the hole transport region; and An electron transport region is transferred onto the emissive layer.

14. A method for manufacturing a display device, wherein: The method comprises: preparing a base substrate in which a pixel region is defined; forming a first electrode corresponding to the pixel area on the first surface of the base substrate; forming a pixel definition film on the first electrode so that the pixel definition film exposes a portion of the first electrode; providing a donor substrate including a base layer and a transfer layer directly provided on the base layer and including an organic material so that the transfer layer faces the first electrode; and An organic pattern is formed from the transfer layer on the first electrode by irradiating a laser toward the donor substrate on a second surface of the base substrate opposite to the first surface.

15. The method according to claim 14, wherein: The base substrate and the donor substrate are spaced apart from each other by a certain distance.

16. The method according to claim 14, wherein: The method further comprises: Before forming the organic pattern on the first electrode, the donor substrate is brought into contact with the base substrate.

17. An apparatus for manufacturing a display device, wherein: The device comprises: a stage on which a display substrate having a pixel area is placed; a donor substrate spaced apart from the display substrate, the donor substrate including a base layer and a transfer layer disposed on the base layer and including an organic material; and A laser irradiation portion is spaced apart from the donor substrate with the display substrate between the laser irradiation portion and the donor substrate, and irradiates the donor substrate with laser light on the display substrate.

18. The device according to claim 17, wherein: The laser irradiation section includes a vertical cavity surface emitting laser.

19. The device according to claim 17, wherein: The laser irradiation section irradiates a portion of the donor substrate overlapping the pixel region in a plan view with the laser.

20. The device according to claim 17, wherein: The laser irradiation part continuously moves on the display substrate, and the laser irradiation part irradiates the donor substrate with the laser.

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