Co-sealed device for electro-optical modulation chip and control chip with optical end face coupling

Abstract

The present invention discloses a co-sealed device for an electro-optical modulation chip and a control chip coupled with an optical end face, comprising an input optical fiber, an electro-optical modulation chip, an output optical fiber, a monitoring photodetector, a base, a control chip, a tube shell, a radio frequency load, a bottom plate, and a cover plate; a base is welded to the upper surface of the bottom plate, and a top cavity and a bottom cavity are arranged on the base in sequence from top to bottom in the vertical direction; a tube shell is welded to the upper surface of the bottom plate, and a cavity capable of accommodating the base is arranged on the tube shell; a cover plate is welded to the top of the tube shell; the bottom cavity is used to assemble the control chip; an electro-optical modulation chip is bonded in the top cavity; a monitoring photodetector is bonded to the top of the electro-optical modulation chip; and an input optical fiber and an output optical fiber are welded to one side of the tube shell. The co-sealed device for an electro-optical modulation chip and a control chip coupled with an optical end face of the present application reduces the vertical height of the entire device; the metal vias in the bottom plate under the control chip form a heat dissipation channel, which can dissipate heat from the control chip, thereby improving the heat dissipation capacity of the control chip.

Description

Technical Field

[0001] The present invention relates to the technical field of optoelectronic hybrid integrated packaging, and in particular to a co-sealing device of an electro-optical modulation chip and a control chip coupled with optical end faces. Background Art

[0002] As electronic information systems evolve toward highly integrated, high-frequency, and broadband systems, microwave photonics technology, owing to its high-frequency and broadband performance, is playing an increasingly important role. Electro-optical modulators (EOMs), devices that achieve electro-optical conversion, are a crucial link between microwaves and lightwaves. Therefore, developing a EOM compatible with the interfaces of highly integrated microwave circuits is crucial. Currently, to avoid the size limitations of RF connectors, EOMs often utilize integrated packaging by surface-mounting microwave components onto printed circuit boards, thereby further improving the integration of microwave systems.

[0003] However, the current large size of EO modulators makes them difficult to co-package with microwave components for two main reasons. First, the bias operating point of the EO modulator drifts slowly with environmental factors such as temperature, necessitating an external control loop for closed-loop control. This control loop includes discrete components such as the optical beam splitter, monitoring photodetector, and control circuitry. These discrete components are packaged separately, resulting in a large control loop. Second, the EO modulator's RF interface uses large SMA, SMP, and SSMP connectors, requiring a corresponding RF connector for connection to printed circuit boards, which increases the overall size of the microwave system. Furthermore, commonly used integrated microwave components are approximately 1 cm tall. If the EO modulator and microwave components are co-packaged vertically, the optical components must reduce the overall height of the optoelectronic module. Co-packaging the EO modulator chip with the bias control chip is an effective way to reduce the size of the EO modulator, but direct co-packaging also presents heat dissipation issues for the control chip. Therefore, it is particularly important to propose a co-sealing device for an electro-optical modulation chip and a control chip that can be directly soldered to a printed circuit board, has a heat dissipation channel, and is highly compatible with microwave devices. Summary of the Invention

[0004] In order to solve the technical problems existing in the background technology, the present invention proposes a co-sealed device of an electro-optical modulation chip and a control chip coupled with optical end faces.

[0005] The present invention proposes a co-sealed device for an electro-optical modulation chip and a control chip coupled with an optical end face, comprising an input optical fiber, an electro-optical modulation chip, an output optical fiber, a monitoring photodetector, a base, a control chip, a tube shell, a radio frequency load, a bottom plate, and a cover plate; a base is welded on the upper surface of the bottom plate, a top cavity and a bottom cavity are arranged on the base in sequence from top to bottom in the vertical direction, a tube shell is welded on the upper surface of the bottom plate, and a cavity for accommodating the base is arranged on the tube shell, a cover plate is welded on the top of the tube shell, the bottom cavity is used to assemble the control chip, the electro-optical modulation chip is bonded in the top cavity, the monitoring photodetector is bonded on the top of the electro-optical modulation chip, and the tube shell has a plurality of holes. An input optical fiber and an output optical fiber are welded on one side, and the input optical fiber and the output optical fiber extend to the cavity of the tube shell. The center of the input optical fiber coincides with the center of the input optical coupling port of the electro-optical modulation chip. The input light of the input optical fiber is incident on the input optical coupling port through end-face coupling. The center of the output optical coupling port of the electro-optical modulation chip coincides with the center of the output optical fiber. The output light of the output optical coupling port is incident on the output optical fiber through end-face coupling. The electro-optical modulation chip is electrically connected to the control chip, and the monitoring photodetector is electrically connected to the control chip to realize the bias control closed loop of the electro-optical modulation chip.

[0006] Preferably, the interface of the electro-optical modulation chip includes an input optical coupling port, an output optical coupling port, a monitoring optical coupling port, a radio frequency input electrode, and a bias input electrode; the input optical coupling port and the output optical coupling port are end-face coupling structures, which are used for optical coupling between the electro-optical modulation chip and the input light and the output light; the monitoring optical coupling port is an arrayed waveguide grating or an on-chip optical reflection structure, which is used for vertical coupling of light between monitoring lights; the radio frequency input electrode is an radio frequency signal loading port, and the bias input electrode is a bias voltage loading port.

[0007] Preferably, the base plate includes a base plate medium, a welding strip, a base plate surface wiring, a base plate metal via, and a bottom solder ball. The base plate surface wiring is provided on the upper surface of the base plate medium. A plurality of groups of base plate metal vias are arranged in an array on the base plate medium, and the plurality of groups of base plate metal vias are distributed in a vertical direction. The bottom ends of the plurality of groups of base plate metal vias are welded with bottom solder balls in a one-to-one correspondence.

[0008] Preferably, the base includes a base body, a top cavity, a bottom cavity, base surface wiring and base metal vias. The upper surface of the base is located on both sides of the top cavity and is provided with multiple groups of base surface wirings. The interior of the base is located on both sides of the top cavity and is provided with multiple groups of base metal vias. The multiple groups of base metal vias correspond one-to-one to the multiple groups of base surface wirings, and the top of the base metal vias is electrically connected to the base surface wiring.

[0009] Preferably, the interface of the control chip includes a monitoring input port, a bias output port, a download input port, and a status output port. All interfaces of the control chip are connected to the base plate wire bonding. The monitoring input port is connected to the monitoring output port wire bonding of the monitoring photodetector through the base plate surface wiring, the base metal via and the base surface wiring in sequence; the bias output port is connected to the bias input electrode wire bonding of the electro-optical modulation chip through the base plate surface wiring, the base metal via and the base surface wiring in sequence; the download input port is electrically connected to the bottom solder ball through the base plate surface wiring and the base plate metal via in sequence, and the control program update and download signals are input through the bottom solder ball; the status output port is electrically connected to the bottom solder ball through the base plate surface wiring and the base plate metal via in sequence, and the status signal of the control chip is output through the bottom solder ball.

[0010] Preferably, the RF input electrode and bias input electrode of the electro-optical modulation chip are wire-bonded to the base, and the RF input electrode is divided into two ends. One end of the RF input electrode is connected to the external RF signal, which is fed in through a group of bottom solder balls on the base plate, and is fed into the RF input electrode through wire bonding in sequence through the base plate metal vias, the base metal vias and the base surface wiring. The other end of the RF input electrode is connected to the RF load through wire bonding; the bias input electrode is wire-bonded to the bias output port of the control chip through the base surface wiring, the base metal vias and the base surface wiring in sequence, and the upper surface of the electro-optical modulation chip is flush with the upper surface of the top cavity.

[0011] Preferably, the monitoring photodetector interface includes a monitoring optical port and a monitoring output port, the monitoring optical port is located on the lower surface of the monitoring photodetector, and the monitoring output port is located on the upper surface of the monitoring photodetector; the monitoring photodetector is bonded to the upper surface of the electro-optical modulation chip, and the monitoring optical port coincides with the monitoring optical coupling port of the electro-optical modulation chip; the monitoring output port is wire-bonded to the base, and the monitoring output port is wire-bonded to the monitoring input port of the control chip through the base surface wiring, the base metal vias and the bottom plate surface wiring in sequence.

[0012] Preferably, the surface wiring of the base plate is used for welding and mounting the base and the control chip as well as signal transmission; the metal vias of the base plate are used for signal transmission between the base and the control chip on the one hand, and on the other hand, the metal vias of the base plate located below the control chip form a heat dissipation channel, which can dissipate heat from the control chip.

[0013] Preferably, the top of the tube shell is welded to the cover plate, the bottom of the tube shell is welded to the bottom plate, and the input optical fiber and the output optical fiber are welded to one side of the tube shell to form a closed cavity.

[0014] The present invention proposes a co-packaged electro-optical modulation chip and control chip device with optical end-face coupling. This device co-packages the electro-optical modulation chip, monitoring photodetector, and control chip. The monitoring photodetector is surface-mounted on the electro-optical modulation chip for optical transmission. The electro-optical modulation chip, monitoring photodetector, and control chip are connected via wire bonding to metal vias within the base, completing the bias control loop for the entire electro-optical modulation chip. The base utilizes a vertical multi-cavity design to co-package the electro-optical modulation chip and control chip within the base, resulting in a compact device. Metal vias in the baseplate beneath the control chip form heat dissipation channels that dissipate heat from the control chip, improving its heat dissipation capacity. The electro-optical modulation chip utilizes end-face coupling for optical coupling with the input and output optical fibers, reducing the vertical height of the device and making it highly compatible with microwave circuit packaging components, facilitating co-packaged designs with these components. Furthermore, a surface-mount monitoring photodetector is used for monitoring optical coupling. This surface-mount approach minimizes the coupling optical path, reduces coupling assembly complexity, and reduces the overall device size. The baseplate's bottom solder balls are welded to the external printed circuit board to transmit signals such as the electro-optical modulator chip's RF signal, the control chip's download signal, and the control chip's status signal. This avoids the need for RF connector switching, reduces the overall device size, and enables integration with microwave circuits through welding. The base has a top cavity, within which the electro-optical modulator chip is mounted. The top surface of the electro-optical modulator chip is flush with the top surface of the base cavity, reducing the distance between the modulator chip's RF port and the base's metal via wirebonds, improving the modulator chip's high-frequency performance. The housing is welded to the cover, input and output optical fibers, and baseplate to form a sealed package with high reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a schematic diagram of the three-dimensional split structure of the co-sealed device of the electro-optical modulation chip and the control chip coupled with the optical end face proposed by the present invention;

[0016] Figure 2 This is a schematic diagram of the electro-optical modulation chip structure of the optical end-face coupled electro-optical modulation chip and control chip co-sealed device proposed by the present invention;

[0017] Figure 3 This is a schematic diagram of the base structure of the co-sealed device for the electro-optical modulation chip and the control chip coupled with optical end faces proposed by the present invention;

[0018] Figure 4 This is a schematic diagram of the bottom plate structure of the optical end-face coupled electro-optical modulation chip and control chip co-sealed device proposed by the present invention.

[0019] Legend:

[0020] 1. Input optical fiber; 2. Electro-optical modulation chip; 21. Input optical coupling port; 22. RF input electrode; 23. Bias input electrode; 24. Output optical coupling port; 25. Monitoring optical coupling port; 3. Output optical fiber; 4. Monitoring photodetector; 41. Monitoring optical port; 42. Monitoring output port; 5. Base; 51. Base body; 52. Top cavity; 53. Bottom cavity; 54. Base surface wiring; 55. Base metal via; 6. Control chip; 61. Monitoring input port; 62. Bias output port; 63. Download input port; 64. Status output port; 7. Tube shell; 8. RF load; 9. Base plate; 91. Base plate dielectric; 92. Soldering strip; 93. Base plate surface wiring; 94. Base plate metal via; 95. Bottom solder ball; 10. Cover plate DETAILED DESCRIPTION

[0021] Reference Figure 1-4 The present invention proposes a co-sealed device for an electro-optical modulation chip and a control chip for optical end face coupling, comprising an input optical fiber 1, an electro-optical modulation chip 2, an output optical fiber 3, a monitoring photodetector 4, a base 5, a control chip 6, a tube shell 7, an RF load 8, a bottom plate 9, and a cover plate 10. The base 5 is welded to the upper surface of the bottom plate 9, and a top cavity 52 and a bottom cavity 53 are arranged on the base 5 in a vertical direction from top to bottom. The tube shell 7 is welded to the upper surface of the bottom plate 9, and a cavity for accommodating the base 5 is provided on the tube shell 7. The top of the tube shell 7 is welded to the cover plate 10. The bottom cavity 53 is used to assemble the control chip 6. The electro-optical modulation chip 2 is bonded in the top cavity 52, and the monitoring photodetector is bonded on the top of the electro-optical modulation chip 2. 4. An input optical fiber 1 and an output optical fiber 3 are welded to one side of the tube shell 7, and the input optical fiber 1 and the output optical fiber 3 extend into the cavity of the tube shell 7. The center of the input optical fiber 1 coincides with the center of the input optical coupling port 21 of the electro-optical modulation chip 2. The input light of the input optical fiber 1 is incident on the input optical coupling port 21 through end-face coupling. The center of the output optical coupling port 24 of the electro-optical modulation chip 2 coincides with the center of the output optical fiber 3. The output light of the output optical coupling port 24 is incident on the output optical fiber 3 through end-face coupling. The electro-optical modulation chip 2 is electrically connected to the control chip 6, and the monitoring photodetector 4 is electrically connected to the control chip 6 to realize a bias control closed loop of the electro-optical modulation chip 2.

[0022] In this embodiment, the top of the tube shell 7 is welded to the cover plate 10, the bottom of the tube shell 7 is welded to the bottom plate 9, and the input optical fiber 1 and the output optical fiber 3 are welded to one side of the tube shell 7 to form a closed cavity.

[0023] Specifically, such as Figure 2As shown, the interface of the electro-optical modulation chip 2 includes an input optical coupling port 21, an output optical coupling port 24, a monitoring optical coupling port 25, a radio frequency input electrode 22, and a bias input electrode 23; the input optical coupling port 21 and the output optical coupling port 24 are end-face coupling structures for optical coupling between the electro-optical modulation chip 2 and the input light and the output light; the monitoring optical coupling port 25 is an arrayed waveguide grating or an on-chip optical reflection structure for vertical coupling between the monitoring lights; the radio frequency input electrode 22 is a radio frequency signal loading port, and the bias input electrode 23 is a bias voltage loading port.

[0024] Specifically, such as Figure 4 As shown, the base plate 9 includes a base plate dielectric 91, a welding strip 92, a base plate surface wiring 93, a base plate metal via 94, and a bottom solder ball 95. The base plate surface wiring 93 is provided on the upper surface of the base plate dielectric 91. A plurality of groups of base plate metal vias 94 are arranged in an array on the base plate dielectric 91, and the plurality of groups of base plate metal vias 94 are distributed in a vertical direction. The bottom ends of the plurality of groups of base plate metal vias 94 are welded with bottom solder balls 95 in a one-to-one correspondence.

[0025] In this embodiment, the bottom plate surface wiring 93 is used for welding and mounting the base 5 and the control chip 6 and for signal transmission; the bottom plate metal vias 94 are used for signal transmission between the base 5 and the control chip 6 on the one hand, and on the other hand, the bottom plate metal vias 94 located below the control chip 6 form a heat dissipation channel, which can dissipate heat from the control chip 6.

[0026] Specifically, such as Figure 3 As shown, the base 5 includes a base body 51, a top cavity 52, a bottom cavity 53, a base surface wiring 54 and a base metal via 55. The upper surface of the base 5 is located on both sides of the top cavity 52 and is provided with multiple groups of base surface wiring 54. The interior of the base 5 is located on both sides of the top cavity 52 and is provided with multiple groups of base metal vias 55. The multiple groups of base metal vias 55 correspond one-to-one to the multiple groups of base surface wiring 54, and the top of the base metal via 55 is electrically connected to the base surface wiring 54.

[0027] Specifically, such as Figure 1 and Figure 4As shown, the interface of the control chip 6 includes a monitoring input port 61, a bias output port 62, a download input port 63, and a status output port 64. All interfaces of the control chip 6 are wire-bonded to the base plate 9. The monitoring input port 61 is wire-bonded to the monitoring output port 42 of the monitoring photodetector 4 through the base plate surface wiring 93, the base metal via 55, and the base surface wiring 54; the bias output port 62 is wire-bonded to the bias input electrode 23 of the electro-optical modulation chip 2 through the base plate surface wiring 93, the base metal via 55, and the base surface wiring 54; the download input port 63 is electrically connected to the bottom solder ball 95 through the base plate surface wiring 93 and the base metal via 94, and the control program update and download signals are input through the bottom solder ball 95; the status output port 64 is electrically connected to the bottom solder ball 95 through the base plate surface wiring 93 and the base metal via 94, and the status signal of the control chip 6 is output through the bottom solder ball 95.

[0028] Specifically, such as Figure 1 and Figure 2 As shown, the RF input electrode 22 and the bias input electrode 23 of the electro-optical modulation chip 2 are wire-bonded to the base 5. The RF input electrode 22 is divided into two ends. One end of the RF input electrode 22 is connected to the external RF signal, which is fed in through a group of bottom solder balls 95 on the base plate 9, and is fed into the RF input electrode 22 through wire bonding in sequence through the base metal vias 94, the base metal vias 55 and the base surface wiring 54. The other end of the RF input electrode 22 is connected to the RF load 8 through wire bonding; the bias input electrode 23 is wire-bonded to the bias output port 62 of the control chip 6 through the base surface wiring 54, the base metal vias 55 and the base surface wiring 93 in sequence. The upper surface of the electro-optical modulation chip 2 is flush with the upper surface of the top cavity 52.

[0029] Specifically, such as Figure 1 and Figure 2 As shown, the interface of the monitoring photodetector 4 includes a monitoring optical port 41 and a monitoring output port 42. The monitoring optical port 41 is located on the lower surface of the monitoring photodetector 4, and the monitoring output port 42 is located on the upper surface of the monitoring photodetector 4; the monitoring photodetector 4 is bonded to the upper surface of the electro-optical modulation chip 2, and the monitoring optical port 41 coincides with the monitoring optical coupling port 25 of the electro-optical modulation chip 2; the monitoring output port 42 is wire-bonded to the base 5, and the monitoring output port 42 is wire-bonded to the monitoring input port 61 of the control chip 6 through the base surface wiring 54, the base metal via 55 and the bottom plate surface wiring 93 in sequence.

[0030] During the specific operation of the co-sealed electro-optical modulation chip and control chip coupled with optical end faces in this embodiment, an optical signal is input to an input optical fiber 1 via the input optical coupling port 21 of the input electro-optical modulation chip 2. The optical signal is then split into two paths within the electro-optical modulation chip 2. The two optical signals undergo electro-optical conversion via the RF input electrode 22 of the electro-optical modulation chip 2. After the two optical fields become coherent, they are split into two output paths. One path is coupled into the output optical fiber 3 via the output optical coupling port 24 of the electro-optical modulation chip 2 for modulated optical signal output. The other path, loaded with an RF signal, is converted into an electrical signal at the monitoring photodetector 4 via the monitoring optical coupling port 25 of the electro-optical modulation chip 2. By controlling the bias voltage of the electro-optical modulation chip 2, the electro-optical modulation chip 2 can be adjusted to different bias operating points, such as the quadrature operating point (Quad+, Quad-), the maximum output point (Peak), and the minimum output point (NULL). Due to the inherent characteristics of the electro-optical modulation chip 2, its operating point slowly drifts with changes in environmental factors such as temperature, causing system indicators such as output optical power and RF signal modulation efficiency to also drift slowly. In actual use, the control chip 6 is required to collect the monitoring signal output by the monitoring photodetector 4, compare the monitoring signal with the bias operating point setting, and adjust the voltage at the bias output port 62 of the control chip 6 based on the comparison result, forming a closed-loop control loop to ensure that the bias operating point of the electro-optical modulation chip 2 is consistent with the program setting. Common methods for controlling the bias operating point of the electro-optical modulation chip 2 include bias control methods based on scrambling signal monitoring and bias control methods based on output light intensity monitoring. Control program updates and downloads of the control chip 6 are fed through the bottom solder balls 95 of the baseboard 9 and then transmitted to the download input port 63 of the control chip 6 through the baseboard metal vias 94 and the baseboard surface wiring 93. The status output port 64 of the control chip 6 is connected to the bottom solder ball 95 through the bottom substrate surface wiring 93 and the bottom substrate metal via 94 in sequence, and the status signal of the control chip 6 is output through the bottom solder ball 95 .

[0031] The above description is only a preferred specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any technician familiar with the technical field, within the technical scope disclosed by the present invention, who makes equivalent replacements or changes based on the technical solution and inventive concept of the present invention, should be covered by the scope of protection of the present invention.

Claims

1. An electro-optical modulation chip and a control chip co-sealed device coupled with an optical end face, characterized in that: The invention comprises an input optical fiber (1), an electro-optical modulation chip (2), an output optical fiber (3), a monitoring photoelectric detector (4), a base (5), a control chip (6), a tube shell (7), a radio frequency load (8), a bottom plate (9), and a cover plate (10); the base (5) is welded on the upper surface of the bottom plate (9); a top cavity (52) and a bottom cavity (53) are arranged on the base (5) in sequence from top to bottom in the vertical direction; the tube shell (7) is welded on the upper surface of the bottom plate (9); a cavity capable of accommodating the base (5) is arranged on the tube shell (7); the top of the tube shell (7) is welded with a cover plate (10); the bottom cavity (53) is used for assembling the control chip (6); the electro-optical modulation chip (2) is bonded in the top cavity (52); the top of the electro-optical modulation chip (2) is bonded with the monitoring photoelectric detector (4); one side of the tube shell (7) is welded with the top cavity (52); An input optical fiber (1) and an output optical fiber (3) are welded on the side, and the input optical fiber (1) and the output optical fiber (3) extend to the cavity of the tube shell (7), the center of the input optical fiber (1) coincides with the center of the input optical coupling port (21) of the electro-optical modulation chip (2), the input light of the input optical fiber (1) is incident on the input optical coupling port (21) through end-face coupling, the center of the output optical coupling port (24) of the electro-optical modulation chip (2) coincides with the center of the output optical fiber (3), the output light of the output optical coupling port (24) is incident on the output optical fiber (3) through end-face coupling, the electro-optical modulation chip (2) is electrically connected to the control chip (6), and the monitoring photodetector (4) is electrically connected to the control chip (6) to realize the bias control closed loop of the electro-optical modulation chip (2); The bottom plate surface wiring (93) is used for welding and mounting the base (5) and the control chip (6) and for signal transmission; the bottom plate metal vias (94) are used for signal transmission between the base (5) and the control chip (6) on the one hand, and on the other hand, the bottom plate metal vias (94) located below the control chip (6) form a heat dissipation channel to dissipate heat for the control chip (6).

2. The optical end-face coupled electro-optical modulation chip and control chip co-sealed device according to claim 1, characterized in that: The interface of the electro-optical modulation chip (2) includes an input optical coupling port (21), an output optical coupling port (24), a monitoring optical coupling port (25), a radio frequency input electrode (22) and a bias input electrode (23); the input optical coupling port (21) and the output optical coupling port (24) are end-face coupling structures, used for optical coupling between the electro-optical modulation chip (2) and the input light and the output light; the monitoring optical coupling port (25) is an arrayed waveguide grating or an on-chip optical reflection structure, used for vertical coupling of light between monitoring lights; the radio frequency input electrode (22) is a radio frequency signal loading port, and the bias input electrode (23) is a bias voltage loading port.

3. The optical end-face coupled electro-optical modulation chip and control chip co-sealed device according to claim 1, characterized in that: The base plate (9) includes a base plate medium (91), a welding strip (92), a base plate surface wiring (93), a base plate metal via (94), and a bottom solder ball (95). The base plate surface wiring (93) is provided on the upper surface of the base plate medium (91). A plurality of groups of base plate metal vias (94) are arranged in an array on the base plate medium (91), and the plurality of groups of base plate metal vias (94) are distributed in a vertical direction. The bottom ends of the plurality of groups of base plate metal vias (94) are welded with bottom solder balls (95) in a one-to-one correspondence.

4. The co-sealed device of the electro-optical modulation chip and the control chip with optical end face coupling according to claim 3, characterized in that: The base (5) includes a base body (51), a top cavity (52), a bottom cavity (53), a base surface wiring (54) and a base metal via (55). The upper surface of the base (5) is located on both sides of the top cavity (52) and is provided with multiple groups of base surface wiring (54). The interior of the base (5) is located on both sides of the top cavity (52) and is provided with multiple groups of base metal vias (55). The multiple groups of base metal vias (55) correspond one-to-one to the multiple groups of base surface wiring (54), and the tops of the base metal vias (55) are electrically connected to the base surface wiring (54).

5. The co-sealed device of the electro-optical modulation chip and the control chip with optical end face coupling according to claim 4, characterized in that: The interface of the control chip (6) includes a monitoring input port (61), a bias output port (62), a download input port (63), and a status output port (64). All interfaces of the control chip (6) are connected to the base plate (9) by wire bonding. The monitoring input port (61) is connected to the monitoring output port (42) of the monitoring photodetector (4) by wire bonding in sequence through the base plate surface wiring (93), the base metal via (55), and the base surface wiring (54); The bias output port (62) is connected to the bias input electrode (23) of the electro-optical modulation chip (2) by wire bonding in sequence through the bottom plate surface wiring (93), the base metal via (55) and the base surface wiring (54); the download input port (63) is electrically connected to the bottom solder ball (95) through the bottom plate surface wiring (93) and the bottom plate metal via (94), and the control program update and download signals are input through the bottom solder ball (95); the status output port (64) is electrically connected to the bottom solder ball (95) through the bottom plate surface wiring (93) and the bottom plate metal via (94), and the status signal of the control chip (6) is output through the bottom solder ball (95).

6. The optical end-face coupled electro-optical modulation chip and control chip co-sealed device according to claim 4, characterized in that: The radio frequency input electrode (22) and the bias input electrode (23) of the electro-optical modulation chip (2) are connected to the base (5) by wire bonding. The radio frequency input electrode (22) is divided into two ends. One end of the radio frequency input electrode (22) is connected to an external radio frequency signal. The external radio frequency signal is fed in through a group of bottom solder balls (95) on the base plate (9), and is fed into the radio frequency input electrode (22) through wire bonding in sequence through the base plate metal via (94), the base metal via (55) and the base surface wiring (54). The other end of the radio frequency input electrode (22) is connected to the radio frequency load (8) through wire bonding. The bias input electrode (23) is connected to the bias output port (62) of the control chip (6) by wire bonding in sequence through the base surface wiring (54), the base metal via (55) and the base surface wiring (93). The upper surface of the electro-optical modulation chip (2) is flush with the upper surface of the top cavity (52).

7. The optical end-face coupled electro-optical modulation chip and control chip co-sealed device according to claim 4, characterized in that: The monitoring photoelectric detector (4) interface includes a monitoring optical port (41) and a monitoring output port (42), wherein the monitoring optical port (41) is located on the lower surface of the monitoring photoelectric detector (4), and the monitoring output port (42) is located on the upper surface of the monitoring photoelectric detector (4); The monitoring photodetector (4) is bonded to the upper surface of the electro-optical modulation chip (2), and the monitoring optical port (41) coincides with the monitoring optical coupling port (25) of the electro-optical modulation chip (2); the monitoring output port (42) is wire-bonded to the base (5), and the monitoring output port (42) is wire-bonded to the monitoring input port (61) of the control chip (6) through the base surface wiring (54), the base metal via (55) and the bottom plate surface wiring (93).

8. The optical end-face coupled electro-optical modulation chip and control chip co-sealed device according to claim 1, characterized in that: The top of the tube shell (7) is welded to the cover plate (10), the bottom of the tube shell (7) is welded to the bottom plate (9), and an input optical fiber (1) and an output optical fiber (3) are welded to one side of the tube shell (7) to form a closed cavity.

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