Particle beam equipment and debugging method

Abstract

The embodiment of the invention provides particle beam equipment and a debugging method, relates to the field of semiconductor processing and detection equipment, and is used for improving the accuracy of the incident angle of a particle beam in the particle beam equipment so as to improve the working performance of the equipment. The particle beam equipment comprises a sample table, a particle beam unit, a detection device and a control device, wherein the particle beam unit is arranged on one side of the sample table and comprises a particle beam generating device and a scanning deflection device; the particle beam generating device is used for forming a particle beam, and the scanning deflection device is used for controlling the incident angle of the particle beam to the sample table; the particle beam forms a particle beam spot on the sample stage. And the detection device is arranged on the other side of the sample table and is used for detecting Fraunhofer diffraction information of the particle beam spots. The control device is electrically connected with the detection device and the scanning deflection device, and the control device is configured to adjust the scanning deflection device based on the Fraunhofer diffraction information. The particle beam equipment can be used for semiconductor processing and detection.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor processing and testing equipment, and in particular to a particle beam device and a debugging method. Background Art

[0002] Particle beam equipment refers to equipment that uses particle beams such as high-energy electron beams or high-energy ion beams to work, such as electron beam lithography (EBL) equipment, focused-ion-beam (FIB) equipment, electron beam inspection (EBI) equipment and ion implantation equipment. In the above-mentioned particle beam equipment, a sample stage and a particle beam unit are included; wherein the sample stage is used to carry samples to be detected or processed. The particle beam unit is arranged on one side of the sample stage, and is used to form a particle beam, and the particle beam is incident on the sample stage at a specific incident angle.

[0003] The accuracy of the particle beam incident angle affects the working performance of the particle beam device. Therefore, how to improve the accuracy of the particle beam incident angle in the particle beam device becomes the key to improving the performance of the device. Summary of the invention

[0004] The embodiments of the present application provide a particle beam device and a debugging method for improving the accuracy of the incident angle of a particle beam in the particle beam device to improve the working performance of the device.

[0005] To achieve the above objectives, the embodiments of the present application adopt the following technical solutions:

[0006] In the first aspect, an embodiment of the present application provides a particle beam device, which includes a sample stage, a particle beam unit, a detection device and a control device; wherein the particle beam unit is arranged on one side of the sample stage, and includes a particle beam generating device and a scanning deflection device; the particle beam generating device is used to form a particle beam, and the scanning deflection device is used to control the incident angle of the particle beam to the sample stage; the particle beam forms a particle beam spot on the sample stage.

[0007] The detection device is arranged on the other side of the sample stage, and is used to detect the Fraunhofer diffraction information of the particle beam spot.

[0008] The control device is electrically connected to both the detection device and the scanning deflection device, and the control device is configured to adjust the scanning deflection device based on the Fraunhofer diffraction information.

[0009] With the particle beam device provided in the embodiment of the present application, the control device can obtain the Fraunhofer diffraction information of the particle beam spot detected by the detection device, and adjust the operation of the scanning deflection device with reference to the Fraunhofer diffraction information. Since the Fraunhofer diffraction information of the particle beam spot contains data related to the incident angle of the particle beam, in the process of controlling the operation of the scanning deflection device with reference to the Fraunhofer diffraction information, the actual incident angle of the particle beam can be obtained through the Fraunhofer diffraction information, and the operation of the scanning deflection device can be adjusted by using the difference between the actual incident angle and the target incident angle, so as to realize feedback control of the scanning deflection device, so that the actual incident angle of the particle beam is close to or equal to the target incident angle, and the accuracy of the control of the incident angle of the particle beam is improved; thereby improving the working performance of the particle beam device.

[0010] In some embodiments, the distance between the detection device and the sample stage is adjustable within a preset range, and the detection devices within the preset range are all located in the Fraunhofer diffraction region of the particle beam spot. In the particle beam device provided in the embodiment of the present application, the distance between the detection device and the sample stage, i.e., the camera length, is positively correlated with the measurement accuracy of the detection device for the particle beam incident angle, and negatively correlated with the measurement range of the detection device for the particle beam incident angle. Therefore, by adopting a design with adjustable camera length, the measurement accuracy and measurement range can be adjusted by adjusting the camera length, taking into account the application needs of high precision and a large range, and improving the measurement convenience and scope of use.

[0011] In some embodiments, the particle beam device also includes a first lens disposed between the detection device and the sample stage, and the detection device is disposed at the imaging position of the first lens; the focal length of the first lens is adjustable. With such a design, on the one hand, by disposing the first lens between the detection device and the sample stage, the requirement for the actual distance between the detection device and the sample stage can be reduced on the basis of satisfying that the detection device can detect Fraunhofer diffraction, thereby facilitating the particle beam device to be more compact in structure. On the other hand, by adjusting the focal length of the first lens, the purpose of adjusting the (equivalent) camera length can be achieved, thereby achieving the adjustment of the measurement accuracy and measurement range, taking into account the application needs of high precision and a large range, and improving the measurement convenience and scope of use.

[0012] In some embodiments, the detection device includes a detection area; in the orthographic projection to the detection device, the diffraction pattern of the Fraunhofer diffraction of the particle beam spot all falls into the detection area. Such a design can ensure that the detection area size and camera length of the detection device meet the detection needs of the Fraunhofer diffraction of the particle beam spot; and, during the process of adjusting the camera length, it can also ensure that the detection area size and camera length of the detection device meet the detection needs of the Fraunhofer diffraction of the particle beam spot; thereby ensuring the accuracy and completeness of the detection of the detection device.

[0013] In some embodiments, the detection device includes at least one of a direct electron detector, a photocoupler, a fluorescent screen, a charge coupled device, a charge injection device, and a complementary metal oxide semiconductor device. In the particle beam device provided in the embodiment of the present application, the detection device can select a variety of different types of detectors, with flexible design and good adaptability.

[0014] In some embodiments, the particle beam device includes an electron beam lithography device, a focused ion beam device, an electron beam detection device, and an ion implantation device; wherein the electron beam detection device includes a scanning electron microscope and a scanning transmission electron microscope. The solution provided in the embodiment of the present application can be applied to a variety of different particle beam devices, and the above-mentioned technical effects can be achieved in different particle beam devices, with a wide range of applications and can adapt to different application scenarios.

[0015] In the second aspect, an embodiment of the present application provides a debugging method for a particle beam device, wherein the particle beam device includes a sample stage, a particle beam unit, a detection device and a control device, wherein the particle beam unit is arranged on one side of the sample stage, and includes a particle beam generating device and a scanning deflection device; the particle beam generating device is used to form a particle beam, and the scanning deflection device is used to control the incident angle of the particle beam incident on the sample stage; the particle beam forms a particle beam spot on the sample stage.

[0016] The detection device is arranged on the other side of the sample stage and is used to detect the Fraunhofer diffraction information of the particle beam spot; the control device is electrically connected to the detection device and the scanning deflection device.

[0017] The debugging method includes:

[0018] Controlling the particle beam to be incident on the sample stage at a target incident angle;

[0019] acquiring Fraunhofer diffraction information detected by a detection device;

[0020] An adjustment signal for adjusting the scanning deflection device is output according to the Fraunhofer diffraction information.

[0021] By adopting the debugging method provided in the embodiment of the present application, the scanning deflection device can be adjusted according to the difference between the actual incident angle of the particle beam and the target incident angle, so that the actual incident angle of the particle beam is consistent with or tends to be consistent with the target incident angle, thereby improving the accuracy of controlling the incident angle of the particle beam to ensure the working performance of the particle beam equipment.

[0022] In some embodiments, outputting an adjustment signal for adjusting a scanning deflection device according to Fraunhofer diffraction information includes:

[0023] The actual incident angle of the particle beam relative to the sample stage is obtained according to the Fraunhofer diffraction information;

[0024] Based on the difference between the actual incident angle and the target incident angle, an adjustment signal is output.

[0025] In some embodiments, obtaining the actual incident angle of the particle beam relative to the sample stage according to the Fraunhofer diffraction information includes:

[0026] Based on the Fraunhofer diffraction information, the actual incident angle is obtained through Fourier transform.

[0027] In some embodiments, obtaining the actual incident angle of the particle beam relative to the sample stage according to the Fraunhofer diffraction information includes:

[0028] Based on the Fraunhofer diffraction information, the incident angle database is searched to obtain the actual incident angle;

[0029] The incident angle database includes the correspondence between at least part of the Fraunhofer diffraction information and the incident angle.

[0030] In some embodiments, a method for forming an incident angle database includes:

[0031] Control the particle beam to scan on the sample stage according to a preset scanning rule;

[0032] The Fraunhofer diffraction information of the particle beam spot is obtained during the scanning process;

[0033] Obtaining position information of the diffraction image according to the Fraunhofer diffraction information;

[0034] Associating the position information with the preset scanning rules to form a basic database containing the corresponding relationship between the incident angle and the position information;

[0035] Based on the basic database, multiple sub-databases under different detection conditions are obtained by linear transformation; multiple sub-databases form an incident angle database;

[0036] The preset scanning rules include multiple scanning positions and multiple incident angles corresponding to each scanning position; the detection conditions include parameter information of the detection device and position information of the detection device.

[0037] In the third aspect, an embodiment of the present application also provides a debugging device for a particle beam device, wherein the particle beam device includes a sample stage, a particle beam unit, a detection device and a control device, wherein the particle beam unit is arranged on one side of the sample stage, and includes a particle beam generating device and a scanning deflection device; the particle beam generating device is used to form a particle beam, and the scanning deflection device is used to control the incident angle of the particle beam to the sample stage; the particle beam forms a particle beam spot on the sample stage.

[0038] The detection device is arranged on the other side of the sample stage and is used to detect the Fraunhofer diffraction information of the particle beam spot; the control device is electrically connected to the detection device and the scanning deflection device.

[0039] The debugging device comprises:

[0040] A control module, the control module is configured to control the particle beam to be incident on the sample stage at a target incident angle;

[0041] an acquisition module, the acquisition module being configured to acquire Fraunhofer diffraction information detected by the detection device; and

[0042] The adjustment module is configured to output an adjustment signal for adjusting the scanning deflection device according to the Fraunhofer diffraction information.

[0043] In a fourth aspect, an embodiment of the present application further provides a computer storage medium, which includes computer instructions. When the computer instructions are executed on a particle beam device, the particle beam device executes a debugging method as described in any one of the second aspects.

[0044] In a fifth aspect, an embodiment of the present application further provides a computer program product, which, when executed on a particle beam device, enables the debugging method described in any one of the second aspects to be executed on the particle beam device.

[0045] The technical effects that can be achieved by the debugging device, computer storage medium, and computer program product provided in the embodiments of the present application are the same as the technical effects that can be achieved by the debugging method in any of the above embodiments, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Figure 1 A schematic diagram of the structure of a particle beam device provided in an embodiment of the present application;

[0047] Figure 2 A schematic diagram of the structure of another particle beam device provided in an embodiment of the present application;

[0048] Figure 3 Particle beam incident angle measurement principle provided in the embodiment of the present application Figure 1 ;

[0049] Figure 4 Particle beam incident angle measurement principle provided in the embodiment of the present application Figure 2 ;

[0050] Figure 5 A top view of a detection device provided in an embodiment of the present application;

[0051] Figure 6 A schematic diagram of the structure of another detection device provided in an embodiment of the present application;

[0052] Figure 7A flowchart of a debugging method for a particle beam device provided in an embodiment of the present application;

[0053] Figure 8 A flowchart of another method for debugging a particle beam device provided in an embodiment of the present application;

[0054] Fig. 9 A flowchart of another method for debugging a particle beam device provided in an embodiment of the present application;

[0055] Fig.10 A schematic diagram of the coordinates of a particle beam in real space and reciprocal space provided in an embodiment of the present application;

[0056] Fig.11 A schematic diagram of the structure of a debugging device for a particle beam device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0057] Particle beam equipment refers to equipment that uses particle beams such as high-energy electron beams or high-energy ion beams to work, such as electron beam lithography (EBL) equipment, focused-ion-beam (FIB) equipment, electron beam inspection (EBI) equipment and ion implantation equipment, etc.; among them, electron beam inspection equipment includes scanning electron microscope (SEM) and scanning transmission electron microscope (STEM).

[0058] In the above-mentioned particle beam equipment, a sample stage and a particle beam unit are included; wherein the sample stage is used to carry a sample to be detected or processed, and the sample can be, for example, a wafer. The particle beam unit is arranged on one side of the sample stage, and is used to form a particle beam and emit the particle beam to the sample stage at a specific incident angle. The incident angle of the particle beam relative to the sample stage is very important to the device performance of the particle beam equipment.

[0059] For example, when processing a sample on a sample stage, the electron beam lithography equipment needs to project a high-energy electron beam onto the photoresist on the sample surface to change the chemical properties of the photoresist, and then complete the pattern transfer through development; then use the photoresist that has completed the image transfer as a mask to etch the sample. In the above processing, it is necessary to control the electron beam scanning to form a specific pattern. The quality of the pattern formed by the electron beam scanning directly determines the yield of the subsequent sample processing. Therefore, the electron beam lithography equipment needs to accurately control the electron beam incident angle and the pattern formed by the scanning.

[0060] The working principle of the focused ion beam equipment is similar to that of the electron beam lithography equipment. The difference is that the focused ion beam equipment can directly bombard the sample surface with fixed-point ions by focusing and controlling the ion beam, thereby completing the micro-nano structure processing without the need for photoresist and mask. In this processing process, the accuracy of the ion beam incident angle also directly affects the yield of sample processing.

[0061] For example, when the electron beam detection equipment detects the sample on the sample stage, it converges the high-energy electron beam or injects it into the sample in a parallel beam. Due to the interaction between the high-energy electron beam and the matter in the sample, various physical information will be stimulated, such as secondary electrons, backscattered electrons, Auger electrons, X-rays and transmitted electrons, etc. The detector collects this physical information and analyzes it, which can achieve the purpose of characterizing and observing the microscopic morphology of the sample.

[0062] In scanning electron microscopes and scanning transmission electron microscopes, a certain field of view is detected by controlling the high-energy electron beam to scan on the sample surface. However, in order to control the aberration and scanning distortion within a certain range without affecting the detection results, the scanning range of the high-energy electron beam on the sample surface needs to be controlled within a certain range. Therefore, it is necessary to control the accuracy of the electron beam incident angle to avoid affecting the detection accuracy and reliability of the electron beam detection equipment.

[0063] For another example, when an ion implantation device is implanting ions into a sample, it will inject a high-energy ion beam into the sample at a specific angle to form a specific doping morphology in the sample. In some advanced processes, important implantation layers such as lightly doped leakage layers or pocket implantation layers are very sensitive to the angle of ion implantation, so the accuracy of the ion beam incident angle will directly affect the quality of ion implantation into the sample.

[0064] From the above description of different particle beam devices, it can be seen that the accuracy of the incident angle of the particle beam in the particle beam device will affect the working performance of the device. Therefore, how to improve the accuracy of controlling the incident angle of the particle beam becomes the key to ensuring the performance of the device.

[0065] Based on this, the embodiments of the present application provide a particle beam device and a debugging method to achieve precise control of the incident angle of the particle beam, thereby improving the accuracy of the incident angle of the particle beam in the particle beam device and ensuring the working performance of the device.

[0066] The technical solutions in the embodiments of the present application will be described below in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments.

[0067] In the following, in the embodiments of the present application, the terms "first", "second", etc. are only used for convenience of description and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise specified, "plurality" means two or more.

[0068] In the embodiments of the present application, "upper", "lower", "left" and "right" are not limited to being defined relative to the positions of the components schematically placed in the drawings. It should be understood that these directional terms may be relative concepts. They are used for relative description and clarification, and may change accordingly according to the changes in the positions of the components in the drawings.

[0069] In the embodiments of the present application, unless the context requires otherwise, throughout the specification and claims, the term "including" is interpreted as an open, inclusive meaning, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "exemplarily" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present application. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0070] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of deviation from the particular value, where the acceptable range of deviation is determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0071] In the embodiments of the present application, exemplary embodiments are described with reference to cross-sectional views and / or plan views and / or equivalent circuit diagrams as idealized exemplary drawings. In the drawings, the thickness of the layers and regions is magnified for clarity. Therefore, it is conceivable that the shape changes relative to the drawings are caused by, for example, manufacturing technology and / or tolerances. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include shape deviations caused by, for example, manufacturing. For example, an etched region shown as a rectangle will generally have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device, and are not intended to limit the scope of the exemplary embodiments.

[0072] An embodiment of the present application provides a particle beam device, which may be an electron beam lithography device, a focused ion beam device, an electron beam detection device, an ion implantation device, or other device that utilizes a particle beam to work; wherein the electron beam detection device may be a scanning electron microscope or a scanning transmission electron microscope.

[0073] like Figure 1 As shown, the particle beam device 1 includes a sample stage 3, a particle beam unit 2, a detection device 4 and a control device 5. The sample stage 3 is a sample plane in the particle beam device 1, which is used to carry samples to be detected or processed; illustratively, the sample can be a wafer, a mask, a panel or a substrate, etc. The sample stage 3 can be a fixed platform or a movable platform that can move in different directions. In different particle beam devices 1, the structure and shape of the sample stage 3 are usually different; the particle beam device 1 provided in the embodiment of the present application does not limit the specific shape and structure of the sample stage 3.

[0074] The particle beam unit 2 is arranged on one side of the sample stage 3, and includes a particle beam generating device 7 and a scanning deflection device 6. The particle beam generating device 7 is used to generate a particle beam. The scanning deflection device 6 is used to control the particle beam generated by the particle beam generating device 7 so that the particle beam is emitted to the sample stage 3 at a specific incident angle, that is, the scanning deflection device 6 can control the incident angle of the particle beam incident on the sample stage 3. It should be noted that the incident angle in this article refers to the angle of the particle beam relative to the sample stage 3 (sample plane) when it is incident on the sample stage 3 (sample plane).

[0075] In some embodiments, the scanning deflection device 6 may include an electronic lens with a scanning coil, and the electronic lens may be an electrostatic lens that controls the particle beam using an electric field, or a magnetic lens that controls the particle beam using a magnetic field; or a combination of an electrostatic lens and a magnetic lens. The control device 5 is electrically connected to the scanning deflection device 6, and controls the incident angle of the particle beam by controlling the voltage or current signal input to the scanning deflection device 6.

[0076] The particle beam forms a particle beam spot on the sample stage 3, and the particle beam spot will diffract during the propagation in the free space. The diffraction here includes near-field diffraction occurring in the near-field region and far-field diffraction occurring in the far-field region. Among them, the near-field diffraction is also called Fresnel diffraction, and the far-field diffraction is also called Fraunhofer diffraction. Therefore, the far-field region where far-field diffraction occurs is also called the Fraunhofer diffraction zone.

[0077] The detection device 4 is arranged on the other side of the sample stage 3, that is, the particle beam unit 2 and the detection device 4 are arranged on both sides of the sample stage 3, so that Figure 1Taking the orientation shown in as an example, the sample stage 3 is placed horizontally, the particle beam unit 2 is arranged above the sample stage 3, and the detection device 4 is arranged below the sample stage 3. The detection device 4 is used to detect the Fraunhofer diffraction information of the particle beam spot, which may include size information, shape information, and position information of the diffraction pattern in the Fraunhofer diffraction.

[0078] In order to detect the Fraunhofer diffraction information of the particle beam spot, the detection device 4 should be set in the Fraunhofer diffraction area where the particle beam spot can undergo Fraunhofer diffraction. In this paper, the distance between the detection device 4 and the particle beam spot, that is, the distance between the detection device 4 and the sample stage 3 is defined as the camera length. In order to set the detection device 4 in the Fraunhofer diffraction area of ​​the particle beam spot, the camera length should meet the following formula requirements:

[0079]

[0080] Among them, z is the camera length, w is the radius of the particle beam spot, and λ is the wavelength of the particle beam.

[0081] In some other embodiments, such as Figure 2 As shown, the particle beam device 1 further includes a first lens 8 disposed between the detection device 4 and the sample stage 3. The detection device 4 is disposed at the imaging position of the first lens 8, and the first lens 8 forms an image on the detection device 4. Here, the first lens 8 is generally a lens group formed by a plurality of lenses; and the camera length z in the above formula is an equivalent camera length associated with the first lens 8.

[0082] By arranging the first lens 8 between the detection device 4 and the sample stage 3, the requirement for the actual distance between the detection device 4 and the sample stage 3 can be reduced while ensuring that the detection device 4 can detect Fraunhofer diffraction, thereby making the particle beam device 1 more compact in structure.

[0083] It should be noted that, in an embodiment where there is no first lens 8 between the detection device 4 and the sample stage 3, the camera length in this article refers to the actual distance between the detection device 4 and the sample stage 3; in an embodiment where there is a first lens 8 between the detection device 4 and the sample stage 3, the camera length in this article refers to the equivalent camera length associated with the first lens 8.

[0084] Please refer to Figure 1 and Figure 2 The control device 5 in the particle beam device 1 is electrically connected to the detection device 4. After detecting the Fraunhofer diffraction information of the particle beam spot, the detection device 4 sends it to the control device 5; the control device 5 obtains the Fraunhofer diffraction information detected by the detection device 4, and controls and adjusts the scanning deflection device 6 based on the Fraunhofer diffraction information.

[0085] The Fraunhofer diffraction of the particle beam spot on the sample stage 3 is related to the incident angle of the particle beam, and the relationship between the two can be obtained by the Fourier transform phase shift theorem. The Fourier transform phase shift theorem shows that the linear phase shift in the real space (spatial domain) will cause the lateral displacement of the spectrum distribution in the reciprocal space (spatial frequency domain). In combination with the Fourier transform phase shift theorem, it can be known that when the particle beam incident on the sample stage 3 is tilted, that is, when the incident angle of the particle beam relative to the sample stage 3 is not equal to 90 degrees, the particle beam spot (located in the real space) will produce a linear phase shift, thereby causing the diffraction pattern (reciprocal space) of the Fraunhofer diffraction of the particle beam spot to shift. And the tilt angle of the particle beam can be calculated based on the translation of the diffraction pattern, thereby obtaining the incident angle of the particle beam.

[0086] Taking the particle beam device 1 provided in the embodiment of the present application as an example, the real space is defined as the beam spot space of the particle beam, and the reciprocal space is defined as the diffraction space detected by the detection device 4 .

[0087] When the particle beam is incident vertically on the sample stage 3, that is, when the incident angle is 90 degrees, the beam spot position and shape of the particle beam spot observed in real space are as follows: Figure 3 As shown in part (a), the phase distribution of the particle beam spot is as follows: Figure 3 As shown in part (b); the particle beam distribution in the reciprocal space detected by the detection device 4 is as follows Figure 3 As shown in part (c).

[0088] When the particle beam is incident on the sample stage 3 at a certain angle, that is, the incident angle of the particle beam relative to the sample stage 3 is inclined, and the incident angle is not equal to 90 degrees, the beam spot position and shape of the particle beam spot observed in the real space are as follows: Figure 4 As shown in part (a), the phase distribution of the particle beam spot is as follows: Figure 4 As shown in part (b); the particle beam distribution in the reciprocal space detected by the detection device 4 is as follows Figure 4 As shown in part (c).

[0089] It can be seen from the above analysis and comparison with the accompanying drawings that when the incident angle of the particle beam relative to the sample stage 3 is tilted, the phase distribution of the particle beam will have a phase shift (see Figure 3 and Figure 4 In the case of no aberration, based on the beam spot position and shape of the particle beam spot that can be observed from real space (see Figure 3 and Figure 4 In part (a) of the figure, it is impossible to determine whether the particle beam is tilted.

[0090] However, from the diffraction pattern in the reciprocal space (diffraction space) detected by the detection device 4, the diffraction pattern has obvious translation (see Figure 3 and Figure 4In other words, based on the Fraunhofer diffraction information detected by the detection device 4, the incident angle of the particle beam can be obtained, thereby achieving the measurement of the incident angle of the particle beam.

[0091] Therefore, by using the particle beam device 1 provided in the embodiment of the present application, the control device 5 can obtain the Fraunhofer diffraction information of the particle beam spot detected by the detection device 4, and adjust the operation of the scanning deflection device 6 with reference to the Fraunhofer diffraction information. Since the Fraunhofer diffraction information of the particle beam spot contains data related to the incident angle of the particle beam, in the process of controlling the operation of the scanning deflection device 6 with reference to the Fraunhofer diffraction information, the actual incident angle of the particle beam can be obtained through the Fraunhofer diffraction information, and the difference between the actual incident angle and the target incident angle is used to adjust the operation of the scanning deflection device 6, so as to realize feedback control of the scanning deflection device 6, so that the actual incident angle of the particle beam is close to or equal to the target incident angle, and the accuracy of the control of the incident angle of the particle beam is improved; thereby improving the working performance of the particle beam device 1.

[0092] According to the above description, it can be seen that in the particle beam device 1 provided in the embodiment of the present application, the particle beam incident angle is first measured by the detection device 4, and then the scanning deflection device 6 is controlled and adjusted based on the measurement result to improve the accuracy of the particle beam incident angle control by the scanning deflection device 6. Therefore, the measurement accuracy and measurement range of the particle beam incident angle by the detection device 4 will affect the accuracy of the particle beam incident angle control.

[0093] The higher the measurement accuracy of the particle beam incident angle of the detection device 4 and the larger the measurement range, the more beneficial it is to improve the control accuracy of the particle beam incident angle. In addition, when the detection device 4 has a larger measurement range for the particle beam incident angle, the angle range of the particle beam device 1 for accurately controlling the particle beam incident angle will be increased, thereby improving the working performance of the particle beam device 1 and expanding the application scenarios of the particle beam device 1.

[0094] like Figure 5 As shown, the detection device 4 includes a detection area 41 formed by an array of pixels 42, in which a plurality of pixels 42 are arranged in an array. The size of the detection area 41 and the size of the pixels 42 will affect the measurement accuracy and measurement range of the particle beam incident angle by the detection device 4.

[0095] Among them, the size of the pixel 42 in the detection device 4 is negatively correlated with the measurement accuracy of the particle beam incident angle of the detection device 4, and the size of the detection area 41 in the detection device 4 is positively correlated with the measurement range of the particle beam incident angle of the detection device 4. That is to say, under the same other conditions, the smaller the size of the pixel 42 in the detection device 4, the higher the measurement accuracy of the particle beam incident angle; the larger the size of the pixel 42, the lower the measurement accuracy of the particle beam incident angle. Under the same other conditions, the smaller the detection area 41 in the detection device 4, the smaller the measurement range of the particle beam incident angle; the larger the detection area 41, the larger the measurement range of the particle beam incident angle.

[0096] In addition, the camera length will also affect the detection device 4's measurement accuracy and measurement range of the particle beam incident angle, wherein the camera length is positively correlated with the detection device 4's measurement accuracy of the particle beam incident angle; the camera length is negatively correlated with the detection device 4's measurement range of the particle beam incident angle. In other words, under the same conditions, the longer the camera length, the higher the detection device 4's measurement accuracy of the particle beam incident angle; the shorter the camera length, the lower the detection device 4's measurement accuracy of the particle beam incident angle. Under the same conditions, the shorter the camera length, the larger the detection device 4's measurement range of the particle beam incident angle; the longer the camera length, the smaller the detection device 4's measurement range of the particle beam incident angle.

[0097] Compared with the related art, the particle beam device 1 provided in the embodiment of the present application has improved the measurement range and measurement accuracy of the particle beam incident angle, which is beneficial to the accurate control of the particle beam incident angle, and further beneficial to the improvement of the working performance of the particle beam device 1.

[0098] For example, in the particle beam device 1, the pixel 42 size of the detection device 4 is 55 μm, and the camera length is in the range of 1 m to 1.5 m. Under such conditions, the measurement accuracy of the particle beam incident angle can reach 54 μrad, which is a significant improvement in measurement accuracy compared to related technologies.

[0099] As another example, in the particle beam device 1, the detection area 41 in the detection device 4 is a square with a side length of 56 mm, and the camera length is 5 cm. Under this condition, the measurement range of the particle beam incident angle can reach 1.1 degrees; compared with the related art, a significant improvement in the measurement range is achieved.

[0100] In some embodiments, the camera length in the particle beam device 1 is designed to be adjustable within a preset range, and the detection devices 4 within the preset range are all located in the Fraunhofer diffraction region of the particle beam spot; that is, the detection devices 4 within the preset range can detect the Fraunhofer diffraction information of the particle beam spot.

[0101] It can be seen from the above description that the camera length is positively correlated with the measurement accuracy of the detection device 4 for the particle beam incident angle, and negatively correlated with the measurement range of the detection device 4 for the particle beam incident angle. Therefore, by adjusting the camera length, the measurement accuracy and measurement range can be adjusted, taking into account the application needs of high precision and large range, and improving the measurement convenience and scope of use. The user can adjust the camera length to an appropriate size according to the actual scene needs. For example, in some application scenarios, the particle beam device 1 is required to measure the incident angle with high precision and small range; in this case, the camera length can be adjusted to a longer value; for another example, in some application scenarios, the particle beam device 1 is required to measure the incident angle with a large range and small precision, in this case, the camera length can be adjusted to a shorter value.

[0102] The camera length can be adjusted by adjusting the actual distance of the detection device 4 relative to the sample stage 3. For example, the sample stage 3 is a fixed part, and the detection device 4 is designed as a movable part. The camera length can be adjusted by the movement of the detection device 4 relative to the sample stage 3. The movement of the detection device 4 relative to the sample stage 3 can be achieved by structures such as a lead screw and a guide rail.

[0103] In the embodiment with the first lens 8, the camera length is the equivalent camera length related to the first lens 8, and thus can be achieved by adjusting the focal length of the first lens 8. Based on this, in some embodiments, the particle beam device 1 is provided with a first lens 8 with adjustable focal length between the detection device 4 and the sample stage 3, and the first lens 8 forms an image on the detection device 4. By changing the focal length of the first lens 8, the (equivalent) camera length can be adjusted.

[0104] Exemplarily, the first lens 8 is an electronic lens whose focal length can be adjusted by an electrical signal. The first lens 8 is electrically connected to the control device 5 , and the control device 5 can send a control signal for adjusting the focal length to the first lens 8 .

[0105] In some embodiments, in the orthographic projection to the detection device 4, the diffraction pattern of the Fraunhofer diffraction of the particle beam spot all falls into the detection area 41. Such a design can ensure that the size of the detection area 41 of the detection device 4 and the camera length meet the detection needs of the Fraunhofer diffraction of the particle beam spot; and, in the process of adjusting the camera length, it can also ensure that the size of the detection area 41 of the detection device 4 and the camera length meet the detection needs of the Fraunhofer diffraction of the particle beam spot; thereby ensuring the accuracy and completeness of the detection of the detection device 4.

[0106] In some embodiments, the detection device 4 can be a planar array particle detector, which can be a direct electron detector (DED), a photocoupler, a charge coupled device (CCD), a charge injected device (CID) or a complementary metal oxide semiconductor device (CMOS), etc. The planar array particle detector can be used to directly detect Fraunhofer diffraction information.

[0107] In other embodiments, Figure 6 As shown, the detection device 4 includes an electro-optical conversion device 430, a second lens 420 and a photoelectric sensor 410. The electro-optical conversion device 430 is used to display the Fraunhofer diffraction image of the particle beam spot. The photoelectric sensor 410 photographs the Fraunhofer diffraction image displayed on the electro-optical conversion device 430 through the second lens 420, and converts the photographed information into an electrical signal. Exemplarily, the electro-optical conversion device 430 can be a fluorescent screen, and the photoelectric sensor 410 can be a charge coupled device or a complementary metal oxide semiconductor device.

[0108] The magnification of the Fraunhofer diffraction image by the second lens 420 is adjustable. With this design, different measurement accuracies and measurement ranges can be obtained by adjusting the magnification of the second lens 420 to adapt to different application scenarios.

[0109] The embodiment of the present application also provides a debugging method for a particle beam device 1, which can be applied to the particle beam device 1 in the above embodiment. By debugging the particle beam device 1, the accuracy of the particle beam device 1 in controlling the particle beam incident angle is improved to ensure the working performance of the particle beam device 1.

[0110] like Figure 7 As shown, the debugging method 100 may include:

[0111] Step S100: controlling the particle beam to be incident on the sample stage 3 at a target incident angle.

[0112] From the above description of the particle beam device 1, it can be seen that the particle beam device 1 includes a sample stage 3, a particle beam unit 2 and a control device 5; wherein the particle beam unit 2 is arranged on one side of the sample stage 3, and includes a particle beam generating device 7 and a scanning deflection device 6. The particle beam generating device 7 is used to generate a particle beam, and the scanning deflection device 6 is used to control the particle beam generated by the particle beam generating device 7, so that the particle beam can be incident on the sample stage 3 at a specific incident angle.

[0113] The scanning deflection device 6 is electrically connected to the control device 5. In step S100, the control device 5 sends a control signal to the scanning deflection device 6 for controlling the operation of the scanning deflection device 6. The control signal includes information corresponding to the target incident angle. After receiving the control signal, the scanning deflection device 6 controls the particle beam to be incident on the sample stage 3 at the target incident angle.

[0114] Step S200: Acquire Fraunhofer diffraction information detected by the detection device 4.

[0115] After the particle beam is incident on the sample stage 3, a particle beam spot is formed on the sample stage 3, and the particle beam spot will diffract during the propagation in free space. The detection device 4 is used to detect the Fraunhofer diffraction information of the particle beam spot, and the Fraunhofer diffraction information may include size information, shape information, and position information of the diffraction pattern of the Fraunhofer diffraction.

[0116] Step S300: Outputting an adjustment signal for adjusting the scanning deflection device 6 according to the Fraunhofer diffraction information.

[0117] From the above description, it can be seen that the Fraunhofer diffraction information detected by the detection device 4 contains information content associated with the actual incident angle of the particle beam. Therefore, the difference between the actual incident angle and the target incident angle can be judged based on the Fraunhofer diffraction information, and then an adjustment signal for adjusting the scanning deflection device 6 can be output based on the difference.

[0118] By adopting the debugging method of steps S100 to S300, the scanning deflection device 6 can be adjusted according to the difference between the actual incident angle of the particle beam and the target incident angle, so that the actual incident angle of the particle beam is consistent with or tends to be consistent with the target incident angle, thereby improving the accuracy of controlling the particle beam incident angle to ensure the working performance of the particle beam equipment 1.

[0119] The above debugging process of the particle beam device 1 can be performed in real time during the operation of the particle beam device 1, or can be performed at a time point such as when the particle beam device 1 is turned on, before starting a new test or processing, when the surrounding environment changes (for example, a new device that may affect the operation of the particle beam is added), or at a fixed time. The particle beam device 1 will continue to perform subsequent work content with the parameters obtained in the latest debugging as a control reference.

[0120] In step S300, it is necessary to obtain the difference between the actual incident angle of the particle beam and the target incident angle according to the Fraunhofer diffraction information, and then output an adjustment signal based on the difference. The difference here can be obtained by comparing the actual incident angle with the target incident angle, or by comparing at least part of the information in the Fraunhofer diffraction information with reference information, where the reference information is information associated with the target incident angle. Regardless of the comparison method used, data that can characterize the difference between the actual incident angle and the target incident angle can be obtained.

[0121] In some embodiments, Figure 8 As shown, step S300 may include:

[0122] Step S310: Obtaining the actual incident angle of the particle beam relative to the sample stage 3 according to the Fraunhofer diffraction information.

[0123] In step S310, the actual incident angle may be obtained according to the Fraunhofer diffraction information by direct calculation or by searching a database.

[0124] Among them, direct calculation means that the actual incident angle is obtained through Fourier transform based on Fraunhofer diffraction information. The direct calculation method can be adapted to the calculation of incident angles in different scenarios, with accurate calculation and wide application range.

[0125] Searching the database to obtain the actual incident angle means searching the incident angle database based on the Fraunhofer diffraction information to obtain the actual incident angle; wherein the incident angle database includes the correspondence between at least part of the information in the Fraunhofer diffraction information and the actual incident angle. The method of searching the database can reduce the performance requirements of the control device 5 and has the advantage of fast processing speed.

[0126] Step S320: outputting an adjustment signal based on the difference between the actual incident angle and the target incident angle.

[0127] In step S320, the target incident angle can be obtained from the control signal sent by the control device 5 to the scanning deflection device 6. In some cases, the target incident angle can be agreed to be a fixed value, such as 90 degrees. Each time the above debugging method is run, the particle beam is controlled to be incident on the sample stage 3 at the fixed target incident angle in step S100. In this way, when the actual incident angle is compared with the target incident angle in step S320, it is not necessary to separately obtain the target incident angle.

[0128] It can be seen from the above description that the actual incident angle of the particle beam can be obtained based on the Fraunhofer diffraction information, so that according to the difference between the target incident angle and the actual incident angle, an adjustment signal for adjusting the scanning deflection device 6 can be output. Under the control of the adjustment signal, the scanning deflection device 6 can compensate for the difference between the actual incident angle and the target incident angle, so that the actual incident angle of the particle beam tends to be consistent with the target incident angle, thereby improving the accuracy of controlling the incident angle of the particle beam to ensure the working performance of the particle beam equipment 1.

[0129] In some embodiments, Fig. 9 As shown, the method for forming the incident angle database includes:

[0130] Step S10: Control the particle beam to scan on the sample stage 3 according to a preset scanning rule.

[0131] Step S20: obtaining Fraunhofer diffraction information of the particle beam spot during the scanning process.

[0132] Step S30: obtaining position information of the diffraction pattern according to the Fraunhofer diffraction information.

[0133] Step S40: Associating the position information with the preset scanning rules to form a basic database containing the corresponding relationship between the incident angle and the position information.

[0134] Step S50: Based on the basic database, a plurality of sub-databases under different detection conditions are obtained by linear transformation; the plurality of sub-databases form an incident angle database.

[0135] The preset scanning rule includes a plurality of scanning positions and a plurality of incident angles corresponding to each scanning position; such a design is used to traverse as many possibilities as possible for the particle beam to be incident on the sample stage 3 in actual application scenarios.

[0136] Fig.10 Part (a) is a schematic diagram of the coordinates of a particle beam in real space, where (x, y, θ, α) represents the incident position and incident angle of a particle beam. Therefore, the preset scanning rule can be any scanning map restricted by the above parameters.

[0137] Fig.10 Part (b) is a schematic diagram of the coordinates of the particle beam in the reciprocal space. The position information of the particle beam in the reciprocal space, that is, the diffraction pattern, can be represented by (r, φ).

[0138] Therefore, the association between the position information and the preset scanning rule in step S50 may be an association between (x, y, θ, α) and (r, φ).

[0139] In addition, the detection conditions in step S50 include parameter information of the detection device 4 and position information of the detection device 4, such as camera length, pixel 42 size, etc.

[0140] The incident angle database production method provided in the above steps S10 to S50 can be obtained through simulation experiments, or by testing the particle beam device 1 .

[0141] The present application also provides a debugging device for a particle beam device 1, such as Fig.11 As shown, the debugging device 200 includes:

[0142] A control module 210, the control module is configured to control the particle beam to be incident on the sample stage at a target incident angle;

[0143] an acquisition module 220, the acquisition module being configured to acquire Fraunhofer diffraction information detected by the detection device; and

[0144] The adjustment module 230 is configured to output an adjustment signal for adjusting the scanning deflection device according to the Fraunhofer diffraction information.

[0145] An embodiment of the present application also provides a computer storage medium, in which computer instructions are stored. When the computer instructions are executed on an electronic device, the electronic device executes the above-mentioned related method steps to implement the method described in any possible implementation method in the above-mentioned embodiments.

[0146] An embodiment of the present application further provides a computer program product. When the computer program product runs on a computer, the computer executes the above-mentioned related steps to implement the electronic device in the above-mentioned embodiment to execute the method described in any possible implementation manner in the above-mentioned embodiment.

[0147] In addition, an embodiment of the present application also provides a device, which can specifically be a chip, component or module, and the device may include a connected processor and memory; wherein the memory is used to store computer-executable instructions, and when the device is running, the processor can execute the computer-executable instructions stored in the memory so that the device executes the camera adjustment method in the above-mentioned method embodiments.

[0148] Among them, the debugging device, computer storage medium, computer program product or device of the particle beam equipment provided in the embodiments of the present application are all used to execute the relevant methods provided above. Therefore, the beneficial effects that can be achieved can refer to the beneficial effects in the corresponding methods provided above, and will not be repeated here.

[0149] Through the description of the above implementation methods, technical personnel in the relevant field can clearly understand that for the convenience and simplicity of description, only the division of the above-mentioned functional modules is used as an example. In actual applications, the above-mentioned functions can be assigned to different functional modules as needed, that is, the internal structure of the device can be divided into different functional modules to complete all or part of the functions described above.

[0150] In the several embodiments provided in the present application, it should be understood that the disclosed devices and methods can be implemented in other ways, and the device embodiments described above are merely illustrative. For example, the division of the modules or units is only a logical function division, and there may be other division methods in actual implementation; for example, multiple units or components can be combined or integrated into another device, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0151] The units described as separate components may or may not be physically separated, and the components shown as units may be one physical unit or multiple physical units, that is, they may be located in one place or distributed in multiple different places. Some or all of the units may be selected according to actual needs to achieve the purpose of the present embodiment.

[0152] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0153] In the above embodiments, it can be implemented in whole or in part by software, hardware, firmware or any combination thereof. When implemented using a software program, it can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When loading and executing a computer program instruction on a computer, the process or function described in the embodiment of the present application is generated in whole or in part. The computer may be a general-purpose computer, a special-purpose computer, a computer network, or other programmable devices. The computer instructions may be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium, for example, the computer instructions may be transmitted from a website site, a computer, a server or a data center by wired (e.g., coaxial cable, optical fiber, digital subscriber line (Digital Subscriber Line, DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) mode to another website site, computer, server or data center. The computer-readable storage medium may be any available medium that a computer can access or may contain one or more servers, data centers and other data storage devices that can be integrated with a medium. The available medium may be a magnetic medium (eg, a floppy disk, a hard disk, a magnetic tape), an optical medium (eg, a DVD), or a semiconductor medium (eg, a solid state disk (SSD)).

[0154] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A particle beam device, characterized in that: include: Sample stage; A particle beam unit is arranged at one side of the sample stage, the particle beam unit comprises a particle beam generating device and a scanning deflection device, the particle beam generating device is used to form a particle beam, and the scanning deflection device is used to control the incident angle of the particle beam to the sample stage; the particle beam forms a particle beam spot on the sample stage; A detection device disposed on the other side of the sample stage, the detection device being used to detect Fraunhofer diffraction information of the particle beam spot; as well as A control device is electrically connected to the detection device and the scanning deflection device, and the control device is configured to adjust the scanning deflection device based on the Fraunhofer diffraction information.

2. The particle beam device according to claim 1, characterized in that The distance between the detection device and the sample stage is adjustable within a preset range, and the detection devices within the preset range are all located in the Fraunhofer diffraction region of the particle beam spot.

3. The particle beam device according to claim 1 or 2, characterized in that The particle beam device further comprises a first lens arranged between the detection device and the sample stage, and the detection device is arranged at an imaging position of the first lens; the focal length of the first lens is adjustable.

4. The particle beam device according to any one of claims 1 to 3, characterized in that The detection device includes a detection area; In the orthographic projection onto the detection device, the diffraction pattern of the Fraunhofer diffraction of the particle beam spot falls entirely within the detection region.

5. The particle beam device according to any one of claims 1 to 4, characterized in that The detection device includes at least one of a direct electron detector, a photoelectric coupler, a fluorescent screen, a charge coupled device, a charge injection device and a complementary metal oxide semiconductor device.

6. The particle beam device according to any one of claims 1 to 5, characterized in that The particle beam equipment includes electron beam lithography equipment, focused ion beam equipment, electron beam detection equipment and ion implantation equipment; Wherein, the electron beam detection equipment includes a scanning electron microscope and a scanning transmission electron microscope.

7. A method for debugging a particle beam device, characterized in that: The particle beam device comprises a sample stage, a particle beam unit, a detection device and a control device, wherein the particle beam unit is arranged on one side of the sample stage, and comprises a particle beam generating device and a scanning deflection device; the particle beam generating device is used to form a particle beam, and the scanning deflection device is used to control the incident angle of the particle beam incident on the sample stage; the particle beam forms a particle beam spot on the sample stage; The detection device is arranged on the other side of the sample stage, and is used to detect the Fraunhofer diffraction information of the particle beam spot; The control device is electrically connected to the detection device and the scanning deflection device; The debugging method comprises: Controlling the particle beam to be incident on the sample stage at a target incident angle; acquiring Fraunhofer diffraction information detected by a detection device; An adjustment signal for adjusting the scanning deflection device is output according to the Fraunhofer diffraction information.

8. The debugging method according to claim 7, characterized in that: The step of outputting an adjustment signal for adjusting a scanning deflection device according to the Fraunhofer diffraction information comprises: Obtaining an actual incident angle of the particle beam relative to the sample stage according to the Fraunhofer diffraction information; The adjustment signal is output based on the difference between the actual incident angle and the target incident angle.

9. The debugging method according to claim 8, characterized in that: The step of obtaining the actual incident angle of the particle beam relative to the sample stage according to the Fraunhofer diffraction information comprises: Based on the Fraunhofer diffraction information, the actual incident angle is obtained through Fourier transformation.

10. The debugging method according to claim 8, characterized in that: The step of obtaining the actual incident angle of the particle beam relative to the sample stage according to the Fraunhofer diffraction information comprises: Based on the Fraunhofer diffraction information, searching an incident angle database to obtain the actual incident angle; The incident angle database includes a correspondence between at least part of the Fraunhofer diffraction information and the incident angle.

11. The debugging method according to claim 10, characterized in that: The method for forming the incident angle database comprises: Control the particle beam to scan on the sample stage according to a preset scanning rule; The Fraunhofer diffraction information of the particle beam spot is obtained during the scanning process; Obtaining position information of a diffraction image according to the Fraunhofer diffraction information; Associating the position information with the preset scanning rule to form a basic database containing the corresponding relationship between the incident angle and the position information; Based on the basic database, multiple sub-databases under different detection conditions are obtained by linear transformation; the multiple sub-databases form an incident angle database; The preset scanning rule includes a plurality of scanning positions and a plurality of incident angles corresponding to each scanning position; and the detection condition includes parameter information of the detection device and position information of the detection device.

12. A debugging device for a particle beam device, characterized in that: The particle beam device comprises a sample stage, a particle beam unit, a detection device and a control device, wherein the particle beam unit is arranged on one side of the sample stage, and comprises a particle beam generating device and a scanning deflection device; the particle beam generating device is used to form a particle beam, and the scanning deflection device is used to control the incident angle of the particle beam incident on the sample stage; the particle beam forms a particle beam spot on the sample stage; The detection device is arranged on the other side of the sample stage, and is used to detect the Fraunhofer diffraction information of the particle beam spot; The control device is electrically connected to the detection device and the scanning deflection device; The debugging device comprises: A control module, wherein the control module is configured to control the particle beam to be incident on the sample stage at a target incident angle; an acquisition module, wherein the acquisition module is configured to acquire Fraunhofer diffraction information detected by the detection device; and An adjustment module is configured to output an adjustment signal for adjusting a scanning deflection device according to the Fraunhofer diffraction information.

13. A computer storage medium, characterized in that: The method comprises computer instructions, and when the computer instructions are executed on a particle beam device, the particle beam device is caused to execute the debugging method according to any one of claims 7 to 11.

14. A computer program product, characterized in that When the computer program product is run on a particle beam device, the debugging method according to any one of claims 7 to 11 is executed on the particle beam device.

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