Solid state power amplifier and communication device

Abstract

The embodiment of the invention discloses a solid-state power amplifier and communication equipment. A solid-state power amplification bare tube core is sintered on a metal heat conduction base, and a bias circuit device corresponding to the solid-state power amplification bare tube core is directly installed on a main circuit board and is connected with a corresponding electric connection point through a gold wire. The metal heat conduction base, the main circuit board and the metal shielding cover which are installed in a stacked mode form a containing space with a good shielding effect due to good conductive contact, the solid-state power amplification bare tube core and a bias circuit device on the main circuit board are arranged in the containing space to avoid interference, a packaging installation mode is omitted, and the small modular design of the product is achieved. A small-sized non-standard microstrip-to-waveguide formed by enclosing the metal heat-conducting base, the main circuit board and the metal shielding cover effectively controls the loss of the solid-state power amplification bare tube core, especially the high-frequency and high-power solid-state power amplification bare tube core in a signal transmission process and rapidly dissipates heat; and the performance of the solid-state power amplification bare tube core is fully exerted while the size is controlled.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of electronic technology, and in particular to solid-state power amplifiers and communication equipment. Background Art

[0002] With the rapid development of solid-state power amplifiers, the technology and energy density of many high-frequency or high-wattage power amplifiers have been qualitatively improved, and the bare tube cores are getting smaller and smaller.

[0003] When the inventor studied the products using traditional bare die, he found that the product size of the packaged bare die was larger, and the various connections were complicated when the packaged bare die was used in specific products. The product forms at all levels required a larger physical form and complex connection relationships. Summary of the invention

[0004] The embodiments of the present invention provide a solid-state power amplifier and a communication device to solve the technical problems that the product size obtained by the existing packaged bare tube core is large, the various connections are complicated when the packaged bare tube core is used in specific products, and the product forms at all levels require a large physical form and complex connection relationships.

[0005] In a first aspect, an embodiment of the present application provides a solid-state power amplifier, which includes a metal heat-conducting base, a main circuit board, a metal shielding cover, a solid-state power amplifier bare die, and fastening screws;

[0006] The metal heat-conducting base is provided with a first input window, a first output window, a first group of mounting holes and a connection port; the main circuit board is provided with a first device window and a second group of mounting holes; the metal shielding cover is provided with a first input slot, a first output slot, a device accommodating cavity and a third group of mounting holes; the fastening screws are passed through the first group of mounting holes, the second group of mounting holes and the third group of mounting holes to fix the stacked metal heat-conducting base, the main circuit board and the metal shielding cover;

[0007] The solid-state power amplifier bare tube core is sintered on a metal heat-conducting base and is located at the first device window;

[0008] The main circuit board is provided with bias circuit devices, input and output microstrip lines and external power supply terminals; the solid-state power amplifier bare tube core, bias circuit devices and input and output microstrip lines are connected to corresponding electrical connection points through gold wires; the two ends of the input and output microstrip lines are respectively used as input signal terminals and output signal terminals, and the two sides of the input signal terminal are respectively oriented towards the first input window and the first input groove, so as to be placed in the transmission structure of the input microstrip to waveguide formed by the first input window and the first input groove; the two sides of the output signal terminal are respectively oriented towards the first output window and the first output groove, so as to be placed in the transmission structure of the output microstrip to waveguide formed by the first output window and the first output groove; the transmission structure of the input microstrip to waveguide and the transmission structure of the output microstrip to waveguide are both small non-standard size structures; the bias circuit device is embedded in the device accommodating cavity, and the external power supply terminal is exposed through the connecting port.

[0009] As described above, by sintering the solid-state power amplifier bare tube core to the metal thermal conductive base, the bias circuit device corresponding to the solid-state power amplifier bare tube core is directly installed on the main circuit board, and connected to the corresponding electrical connection point through gold wire, the stacked metal thermal conductive base, the main circuit board and the metal shielding cover form a housing space with good shielding effect due to good conductive contact, the bias circuit devices on the solid-state power amplifier bare tube core and the main circuit board are placed in the housing space to avoid interference, and the package-free installation method realizes the small modular design of the product; the small non-standard microstrip waveguide formed by the metal thermal conductive base, the main circuit board and the metal shielding cover effectively controls the loss of the solid-state power amplifier bare tube core, especially the high-frequency and high-power solid-state power amplifier bare tube core during signal transmission and quickly dissipates heat, while controlling the size and giving full play to the performance of the solid-state power amplifier bare tube core.

[0010] The external power supply terminals are divided into two groups, the number of the connection ports is two, and the two groups of external power supply terminals are exposed through one connection port respectively.

[0011] As described above, the external power supply terminal is exposed through the connection port opened by the metal heat-conducting base, which can eliminate external interference as much as possible.

[0012] The external power supply terminal is a contact or a metal spring.

[0013] As described above, through the contacts or metal springs, a stable connection with external devices can be achieved without increasing external interference.

[0014] Wherein, the external power supply terminal is arranged at the top or bottom of the solid-state power amplifier.

[0015] As mentioned above, the external power supply terminal is arranged at the top or the bottom of the solid-state power amplifier, and can be flexibly selected according to the overall design when used.

[0016] The metal spring is connected to the main circuit board through patch welding.

[0017] As mentioned above, the metal springs soldered to the main circuit board through the patch are firmly connected and the signal transmission is stable.

[0018] The bias circuit device includes a multi-stage power supply filter capacitor at the gate and drain.

[0019] As described above, the multi-stage power filter capacitors at the gate and drain can effectively suppress stray signals of various frequencies during signal transmission.

[0020] Among them, the power supply filter capacitors of the gate and the drain are both powered by multiple channels.

[0021] As described above, power supply redundancy is achieved through multi-channel power supply, power supply in various states is guaranteed, and the reliability of power supply connection is maintained.

[0022] In a second aspect, an embodiment of the present application provides a communication device, which includes any solid-state power amplifier of the first aspect.

[0023] As described above, the communication device includes any solid-state power amplifier in the first aspect and has corresponding beneficial effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 A perspective structural diagram of a solid-state power amplifier provided in an embodiment of the present application.

[0025] Figure 2 This is an overall structural diagram from the bottom perspective of the solid-state power amplifier provided in an embodiment of the present application.

[0026] Figure 3 This is an overall structural diagram from a top perspective of a solid-state power amplifier provided in an embodiment of the present application.

[0027] Figure 4 This is a diagram of the internal structure of a solid-state power amplifier provided in an embodiment of the present application.

[0028] Figure 5 This is a front view of the solid-state power amplifier provided in an embodiment of the present application.

[0029] Figure 6 A side view of a solid-state power amplifier provided in an embodiment of the present application.

[0030] Figure 7 A bottom view of a solid-state power amplifier provided in an embodiment of the present application.

[0031] Figure 8 for Figure 7 Cross-section of the BB.

[0032] Fig. 9 An exploded diagram of a solid-state power amplifier provided in an embodiment of the present application.

[0033] Fig.10 A schematic diagram of the planar structure of the input signal end of the input and output microstrip lines provided in an embodiment of the present application.

[0034] Fig.11 A schematic diagram of the planar structure of the output signal end of the input and output microstrip line provided in an embodiment of the present application.

[0035] Fig.12 This is a diagram of signal simulation results for the input signal end of the input and output microstrip lines provided in an embodiment of the present application.

[0036] Fig.13 This is a diagram of signal simulation results of the output signal end of the input and output microstrip line provided in an embodiment of the present application.

[0037] Fig.14 A circuit schematic diagram of a power supply filter capacitor provided in an embodiment of the present application.

[0038] Among them: 10-metal shielding cover; 20-main circuit board; 21-first device window; input signal terminal-22; 23-output signal terminal; 30-metal thermal conductive base; 31-solid-state power amplifier bare tube core; 32-first input window; 33-first output window; 40-external power supply terminal. DETAILED DESCRIPTION

[0039] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only the parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0040] It should be noted that due to space limitations, this application description does not list all optional implementation methods. After reading this application description, those skilled in the art should be able to understand that as long as the technical features do not contradict each other, any combination of technical features can constitute an optional implementation method.

[0041] The following is a detailed description of the various embodiments of the present invention.

[0042] With the rapid development of solid-state power amplifiers, the technology and energy density of many high-frequency or high-wattage power amplifiers have been qualitatively improved, and the bare tube core has become smaller and smaller. However, it is also limited by the three major aspects of its supporting packaging, heat dissipation, and transmission loss. In practical applications, it is often designed as a device or product with large size, complex connection, and low efficiency, which is very unfavorable for the promotion of advanced technology. First, in terms of signal connection, the traditional power amplifier device uses coaxial or standard waveguide designed according to the main mode frequency, which is very large in size and inconvenient to promote. If coaxial or non-cavity connection is used, the loss is also large and the transmission efficiency is low; second, in terms of power supply connection, the traditional method often uses wire welding, which has many wires and is complex, inconvenient to install and use; third, the greater the power and the higher the frequency, the efficiency of the power amplifier will decrease to varying degrees after being packaged with traditional and currently known most advanced packaging materials, and it will also affect the life of the device. On the whole, the size of the packaged products of the traditional bare tube core is large, and the various connections of the bare tube core after packaging are complex when applied to specific products. The product form at all levels requires a large physical form and complex connection relationship.

[0043] In response to the above technical problems, the embodiments of the present application propose a solid-state power amplifier and a communication device. By sintering a solid-state power amplifier bare tube core to a metal thermally conductive base, the bias circuit device corresponding to the solid-state power amplifier bare tube core is directly installed on the main circuit board and connected to the corresponding electrical connection point through a gold wire. The stacked metal thermally conductive base, the main circuit board and the metal shielding cover form a housing space with good shielding effect due to good conductive contact. The bias circuit devices on the solid-state power amplifier bare tube core and the main circuit board are placed in the housing space to avoid interference. The package-free installation method realizes a small modular design of the product. The small non-standard microstrip waveguide formed by the metal thermally conductive base, the main circuit board and the metal shielding cover effectively controls the loss of the solid-state power amplifier bare tube core, especially the high-frequency and high-power solid-state power amplifier bare tube core during signal transmission and quickly dissipates heat, thereby giving full play to the performance of the solid-state power amplifier bare tube core while controlling the size.

[0044] Please refer to Figure 1-Figure 9 , which are respectively a perspective structure diagram of the solid-state power amplifier provided in an embodiment of the present application, an overall structure diagram from a bottom perspective, an overall structure diagram from a top perspective, an internal structure diagram, a front view, a side view, a bottom view, Figure 7 As shown in the figure, the solid-state power amplifier includes a metal heat-conducting base 30, a main circuit board 20, a metal shielding cover 10 and fastening screws; the metal heat-conducting base 30 is provided with a first input window 32, a first output window 33, a first group of mounting holes (i.e. Figure 1 The four corners of the circular hole) and the connection port (i.e. Figure 1 The main circuit board 20 has a first device window 21 and a second set of mounting holes (i.e. Figure 4The metal shielding cover 10 is provided with a first input slot, a first output slot, a device accommodating cavity and a third set of mounting holes; the fastening screws are fixed through the first set of mounting holes, the second set of mounting holes and the third set of mounting holes to fix the stacked metal heat-conducting base 30, the main circuit board 20 and the metal shielding cover 10; the solid-state power amplifier bare tube core 31 is sintered on the metal heat-conducting base 30 and is located at the first device window 21 (i.e. Figure 4 The solid-state power amplifier bare tube core 31 is located in the first device window 21); the main circuit board 20 is provided with bias circuit components, input and output microstrip lines ( Figure 4 As shown by two T-shaped figures, the narrower end is the input signal terminal 22, the wider end is the output signal terminal 23) and the external power supply terminal 40; the solid-state power amplifier bare tube core 31, the bias circuit device and the input and output microstrip lines are all connected to the corresponding electrical connection points through gold wires, wherein the connection points on the solid-state power amplifier bare tube core 31 are usually called pressure points, which are also used to achieve electrical connection from a functional point of view; the two ends of the input and output microstrip lines are respectively used as the input signal terminal 22 and the output signal terminal 23, and the two ends of the input signal terminal 22 are connected to the output signal terminal 23. The two sides of the output signal end 23 respectively face the first input window 32 and the first input slot, so as to be placed in the transmission structure of the input microstrip to waveguide formed by the first input window 32 and the first input slot; the two sides of the output signal end 23 respectively face the first output window 33 and the first output slot, so as to be placed in the transmission structure of the output microstrip to waveguide formed by the first output window 33 and the first output slot; the transmission structure of the input microstrip to waveguide and the transmission of the output microstrip to waveguide are both small non-standard size waveguides; the bias circuit device is embedded in the device accommodating cavity, and the external power supply terminal is exposed through the connecting port.

[0045] In the embodiment of the present application, the devices (bias circuit devices and input / output microstrip lines) on the main circuit board 20 are used to realize the device electronic functions of the solid-state power amplifier in combination with the solid-state power amplifier bare tube core 31, and the metal heat-conducting base 30 and the metal shielding cover 10 are used to form a cavity covering the devices disposed on the main circuit board 20 and the solid-state power amplifier bare tube core 31, so as to shield the interference that may be caused to the devices and circuits on the main circuit board 20 and the solid-state power amplifier bare tube core 31 during operation. It should be understood that the input signal end 22 and the output signal end 23 of the input / output microstrip line in the embodiment of the present application are disposed on the main circuit board 20, specifically, a high-frequency plate is used in the main body of the main circuit board 20, and the high-frequency plate is originally covered with a copper layer, and the copper layer is etched to form the input signal end 22 and the output signal end 23 disposed on the high-frequency plate, and finally arranged on the main circuit board 20 in the general arrangement mode of the input / output microstrip line.

[0046] The first input slot and the first output slot provided in the metal shielding cover 10 correspond to two radial cavities of input and output. The device accommodating slot serves as an upper cavity for placing bias circuit devices. When the two sides of the input signal terminal 22 face the first input window 32 and the first input slot respectively, it is equivalent to that the input signal terminal 22 is located in the waveguide cavity surrounded by the first input window 32 and the first output slot. Similarly, when the two sides of the output signal terminal 23 face the first output window 33 and the first output slot respectively, it is equivalent to that the output signal terminal 23 is located in the waveguide cavity surrounded by the first output window 33 and the first output slot.

[0047] The solid-state power amplifier bare tube core 31, for example, a Ku-band 20W solid-state gallium nitride power amplifier bare tube core, has a length and width of 2.8mm and 3.3mm respectively. It is directly sintered on a high thermal conductivity metal thermal conductive base 30 by gold soldering. The metal thermal conductive base 30 is not limited to a copper metal carrier, but can also be other high thermal conductive materials with a linear expansion coefficient close to the solid-state power amplifier bare tube core 31. The metal thermal conductive base 30 can be integrally formed (for example, by die casting, casting, etc.) with a boss, which is used to sinter the solid-state power amplifier bare tube core 31. The top surface of the boss is slightly smaller than the first device window 21 to ensure smooth installation even if there is a processing error. When the metal heat-conducting base 30 after sintering the solid-state power amplifier bare tube core 31 on the boss is assembled with the main circuit board 20, because the top surface of the boss is smaller than the first device window 21, the boss and the solid-state power amplifier bare tube core 31 can be smoothly installed. After installation, it is located in the space formed by opening the first device window 21, and the four sides of the boss maintain a certain gap with the inner side wall of the first device window 21. The top surface of the solid-state power amplifier bare tube core 31 after installation is roughly flush with the side of the main circuit board 30 facing the metal shielding cover 10, which helps to improve the processing quality of subsequent processing links (such as SMT) and reduce the interference between the solid-state power amplifier bare tube core 31 and the main circuit board 30.

[0048] The screws used for fixing can include one M2 pre-locking screw and four M2.5 fastening screws to complete the fastening installation of the device. The installation operation is convenient and suitable for fully automated production. When encountering product debugging, you only need to remove the fastening screws to complete the disassembly of the device, which greatly facilitates the production and debugging of the product.

[0049] In the specific implementation process, in order to obtain lower high-frequency transmission loss, the main circuit board 20 can be used but not limited to the SG7000 series high-frequency board material, and can also be other low-loss boards, which can achieve low insertion loss and can achieve low insertion loss transmission when applied to high-frequency signals. The example size of the main circuit board 20 is 33mm and 22mm for the long and short versions respectively, the core board material is 0.254mm thick, the single-layer microstrip copper is 0.035mm thick, and the surface adopts the nickel-gold immersion process.

[0050] In addition to input and output microstrip lines, microstrip probes, gate and drain related devices are provided on the main circuit board 20. These devices are soldered and installed on the main circuit board 20 through patch, that is, some connections are completed through the existing printed circuit on the main circuit board 20, and other necessary electrical connection points are connected through gold wires. Gold wires refer to metal wires connected through a bonding process. For example, through a bonding process, each signal pin on a solid-state power amplifier bare tube core 31 is connected to other devices installed on the main circuit board 20 through gold wires, such as input and output microstrip lines, etc., to realize input and output signals, etc.

[0051] In general, the solid-state power amplifier bare tube core is sintered to the metal thermal conductive base, the bias circuit components corresponding to the solid-state power amplifier bare tube core are directly installed on the main circuit board, and connected to the corresponding electrical connection points through gold wires. The stacked metal thermal conductive base, the main circuit board and the metal shielding cover form a housing space with good shielding effect due to good conductive contact. The bias circuit components on the solid-state power amplifier bare tube core and the main circuit board are placed in the housing space to avoid interference, and the package-free installation method realizes the small modular design of the product. The small non-standard microstrip waveguide formed by the metal thermal conductive base, the main circuit board and the metal shielding cover effectively controls the loss of the solid-state power amplifier bare tube core, especially the high-frequency and high-power solid-state power amplifier bare tube core during signal transmission and quickly dissipates heat, thereby giving full play to the performance of the solid-state power amplifier bare tube core while controlling the size.

[0052] In the embodiment of the present application, the transmission structure of the input microstrip to waveguide and the transmission structure of the output microstrip to waveguide are both small non-standard size structures, and the input and output microstrip lines used can be the feed of the microstrip to waveguide. The input and output microstrip lines adopt the feeding form of microstrip to waveguide, which can greatly reduce the loss in the signal chain and improve the power efficiency of the entire solid-state power amplifier. Moreover, the planar microstrip antenna is smaller than the fin line antenna in terms of the overall size of the 50 ohm microstrip line input and output from the chip to the coupled radiation. In the embodiment of the present application, the transmission waveguide with a small non-standard size structure is adopted, which is equivalent to adopting a non-standard input and output radiation cavity that is much smaller than the traditional rectangular waveguide, which can greatly reduce the size of the solid-state power amplifier. The feeding of the non-standard size microstrip to waveguide can achieve an area that is about half of the length and width of the WR75 used in the traditional standard Ku band, which is 19.05mm and 9.525mm respectively, and the smaller waveguide size also has a certain high-pass filter function. If the application requirements allow, a smaller size ridge waveguide can be used to challenge a smaller size design while omitting the function of the high-pass filter.

[0053] Please refer to Figure 10-13, which are respectively a planar structural diagram of the input signal end of the input / output microstrip line provided in an embodiment of the present application, a planar structural diagram of the output signal end of the input / output microstrip line, a signal simulation result diagram of the input signal end of the input / output microstrip line, and a signal simulation result diagram of the output signal end of the input / output microstrip line.

[0054] The accommodation space formed by the metal shielding cover 10, the main circuit board 20 and the metal heat-conducting base 30 is equivalent to two signal input and output radiation cavities. The input and output radiation cavities cooperate with the microstrip probe to allow the microstrip probe to couple and radiate maximum energy within the frequency range of application. Fig.10 and Fig.11 It is designed for satellite communication Ku-band applications. The input and output radiation cavities use small-sized non-standard rectangular waveguides. The length and width of the largest output rectangular waveguide are 11.8mm and 5.9mm respectively. Compared with the size of the WR75 waveguide used in the traditional Ku-band, the area is only about half of that. Although its main mode is above 14.5GHz, through the coordinated design with the microstrip probe, it can effectively work at a lower 13.75GHz and above. At the same time, better out-of-band low-frequency suppression is also achieved. In addition, the extra-cavity area of ​​the metal shielding cover 10 is connected to the metal window surface with grounding properties of the main circuit board 20, thereby realizing full-unit signal shielding.

[0055] The input and output microstrip lines are inserted from the wide sides of the input and output radiation cavities respectively. According to the applied frequency, the depth of the waveguide short circuit surface and the depth of the microstrip probe entering the waveguide cavity and the length and width of the probe are coordinated to obtain the maximum electric field strength, so as to achieve the maximum energy coupled in and emitted out in the applied frequency range. The embodiment of the present application is applicable to the frequency range of the Ku band of satellite communication. The probe size design is as follows: Fig.10 and Fig.11 The simulation results are shown in Fig.12 and Fig.13 shown.

[0056] In a specific implementation, the external power supply terminal 40 is divided into two groups, and the number of connection ports is two, and the two groups of external power supply terminals 40 are respectively exposed through a connection port. The external power supply terminal 40 is exposed through the connection port opened by the metal thermal conductive base 30, which can eliminate external interference as much as possible. The external power supply terminal 40 can be a contact or a metal shrapnel. Through the contact or the metal shrapnel, a stable connection with an external device can be achieved without increasing external interference. The metal shrapnel is connected to the main circuit board through patch welding. The metal shrapnel soldered to the main circuit board through the patch is firmly connected and the signal transmission is stable.

[0057] In general, the connection with external power supply is different from other traditional lead connection and pin socket connection, such as Figure 1-Figure 9As shown, the present design adopts a plurality of groups of metal springs to be crimped with the metal window surface of the corresponding electrical properties to achieve a reliable and extremely simple connection. The metal springs can be sintered at the bottom of the main circuit board 20 (i.e., the side facing the metal heat-conducting base 30), but are not limited to it, and can also be sintered at the top of the main circuit board 20 (i.e., the side facing the metal shielding cover 10). The external power supply terminal 40 of the main circuit board 20 can even be set as a contact point, and an electrical connection with the external circuit is achieved through the contact point, that is, the metal spring is welded on the circuit board corresponding to the external circuit. In the case where the external power supply terminal 40 is a metal spring, the connection accuracy can be guaranteed by the positioning of the pin hole at the bottom of the heat sink. The compression amount of the metal spring used in the present design is about 1.2mm, the spring width is 1mm, and the displacement of the top is only 0.35mm. It is required that the size of the corresponding metal pad on the outside is larger than 1*0.35mm. The other side of the main circuit board 20 where the metal spring is located can rely on the metal shielding cover 10 or the carrier of the main circuit board 20 to provide sufficient stress support to ensure that the compression process of the spring will not cause deformation of the main circuit board 20.

[0058] Please refer to Fig.14 , which is a circuit schematic diagram of the power filter capacitor provided in the embodiment of the present application. In a specific implementation, the bias circuit device includes power filter capacitors for the gate and the drain. Through the power filter capacitors for the gate and the drain, stray signals in the signal transmission process can be effectively suppressed. In another specific implementation, the power filter capacitors for the gate and the drain both include multi-stage power filter capacitors. Through the multi-stage power filter capacitors, stray signals of various frequencies can be effectively suppressed. The gate and the drain are both provided with redundant power supply circuits. Through the redundant power supply circuit, power supply in various states can be guaranteed. The power supply feeder of the solid-state power amplifier is printed on the main circuit board 20 and connected to the external power supply terminal 40 through the metal via on the main circuit board 20. When the bare tube core 31 of the solid-state power amplifier faces the metal shielding cover 10 and the external power supply terminal 40 faces away from the metal shielding cover 10, the power supply feeder is printed on the main circuit board 20 and connected to the external power supply terminal 40 through the metal via, which can ensure that the signal link on the main circuit board 20 can be completely shielded by the metal shielding cover 10, and can also avoid the pollution generated during the welding process of the traditional external power supply terminal.

[0059] As described above, the solid-state power amplifier bare tube core 31 also needs to have gate and drain feeding and external connection. In addition to the input and output microstrip lines for transmitting signals, the main circuit board 20 also has power filter capacitors of different magnitudes corresponding to the gate and drain and their power supply feeders, and the source and drain feed lines are distributed on both sides of the solid-state power amplifier bare tube core 31. In particular, because the design directly uses the solid-state power amplifier bare tube core 31, the gate drain power supply feeder can be used without using a larger 1 / 4 wavelength high-resistance line and fan-shaped microstrip line structure on the outside like some traditional high-power packaged power amplifiers, thereby greatly reducing the size of the solid-state power amplifier. The power supply feeder extends to both sides close to the main circuit board 20 and penetrates the upper and lower layers through metal vias to connect to the corresponding power supply pins of the spring connector on the lower layer. The purpose of connecting it to the lower layer through metal vias is to ensure that the signal link and devices of the upper layer are completely shielded by the metal shielding cover 10. Thanks to this design, the present design can achieve full shielding of the power amplifier, reduce external multipath interference during application, and also improve the protection of the device.

[0060] Corresponding to the design of the specific contacts or metal springs of the external power supply terminal 40, the external power supply feeder only needs to be crimped with the external power supply terminal 40 through several metal springs or metal pads with different electrical properties to achieve effective power supply connection between the gate and the drain. In order to overcome the problem that the existing high-frequency printed circuit board medium is relatively soft and the corresponding main circuit board cannot withstand the pressing stress of the spring, the present design uses a metal shielding cover 10 or a substrate as a support plate for the final force of the metal spring. Compared with other power supply connection methods such as lead welding, this design method greatly reduces the welding workload and greatly improves reliability. At the same time, it also reduces the pollution of the device caused by the welding production process and the pollutants introduced thereby. In addition, the metal spring also has a hard connection design to prevent the possibility of failure of the solid-state power amplifier bare tube core 31 due to external wiring errors. At the same time, compared with the traditional hard socket connection, it has a higher degree of installation freedom in all directions and a smaller size.

[0061] In order to reduce the problem of metal aging after long-term use of metal shrapnel, and the possibility of poor contact at the microscopic level during strong vibration, which may lead to the failure of the solid-state power amplifier, the design specifically makes redundant design for the gate and drain feed on the main circuit board 20 to ensure that even if one of the feed pin shrapnel loses its elasticity or has poor contact, it will not cause the solid-state power amplifier to fail and the device's supporting products to work abnormally. Of course, on the main circuit board 20, there is at least one set of filtering single-layer capacitors between the external power supply terminal 40 and the solid-state power amplifier bare tube core 31, and it can be increased accordingly according to the need for stable operation of the solid-state power amplifier. The two paths on one side can provide the same gate voltage, or two different gate voltages, and the other two paths on one side provide the same drain voltage, a total of 8 paths. At least two different orders of magnitude of low ESR ceramic capacitors in the range of 0.01 to 10 microfarads are connected to the single lines on each side. It can effectively suppress different low-frequency stray signals and ensure stable power supply at the same time. In addition, in response to different gate power supply and redundant design requirements, this design connects a 51 ohm or larger resistor in series between two independent gates. This resistor can balance the gate voltage of the two paths (generally the difference is not large, about within 0.2V), without affecting the independence of the two paths. Because the current is extremely low when the gate is working normally, this resistor can be temporarily or permanently diverted from the power supply link that is connected normally when one of the paths is connected abnormally, so as to avoid any abnormal open circuit of the gate spring connection and cause the solid-state power amplifier to fail. The drain feed circuit also uses multi-stage filter capacitors, and they are combined into one path before connecting to several drains of the solid-state power amplifier bare tube core 31 to achieve a redundant design of drain power supply.

[0062] The embodiment of the present application further provides a communication device, which includes the solid-state power amplifier in any of the above embodiments and has corresponding beneficial effects.

[0063] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0064] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A solid-state power amplifier, characterized in that: It includes a metal heat-conducting base, a main circuit board, a metal shielding cover, a solid-state power amplifier bare tube core and fastening screws; The metal heat-conducting base is provided with a first input window, a first output window, a first group of mounting holes and a connection port; the main circuit board is provided with a first device window and a second group of mounting holes; the metal shielding cover is provided with a first input slot, a first output slot, a device accommodating cavity and a third group of mounting holes; the fastening screws are fixed to the stacked metal heat-conducting base, the main circuit board and the metal shielding cover through the first group of mounting holes, the second group of mounting holes and the third group of mounting holes; The solid-state power amplifier bare tube core is sintered on the metal heat-conducting base and is located at the first device window; The main circuit board is provided with bias circuit components, input and output microstrip lines and external power supply terminals; The solid-state power amplifier bare tube core, bias circuit device and input and output microstrip lines are all connected to corresponding electrical connection points through gold wires; the two ends of the input and output microstrip lines serve as input signal ends and output signal ends respectively, and the two sides of the input signal end face the first input window and the first input slot respectively, so as to be placed in the input microstrip to waveguide transmission structure formed by the first input window and the first input slot; the two sides of the output signal end face the first output window and the first output slot respectively, so as to be placed in the output microstrip to waveguide transmission structure formed by the first output window and the first output slot; the transmission structure of the input microstrip to waveguide and the transmission structure of the output microstrip to waveguide are both small non-standard size structures; the bias circuit device is embedded in the device accommodating cavity, and the external power supply terminal is exposed through the connecting port.

2. The solid-state power amplifier according to claim 1, characterized in that: The external power supply terminals are divided into two groups, the number of the connection ports is two, and the two groups of external power supply terminals are exposed through one connection port respectively.

3. The solid-state power amplifier according to claim 2, characterized in that: The external power supply terminal is a contact or a metal spring.

4. The solid-state power amplifier according to claim 3, characterized in that: The external power supply terminal is arranged at the top or bottom of the solid-state power amplifier.

5. The solid-state power amplifier according to claim 4, characterized in that: The metal spring is connected to the main circuit board by patch welding.

6. The solid-state power amplifier according to claim 1, characterized in that: The bias circuit device includes a multi-stage power supply filter capacitor at the gate and drain.

7. The solid-state power amplifier according to claim 6, characterized in that: The gate and the drain are both provided with redundant power supply circuits.

8. A communication device, characterized in that A solid-state power amplifier comprising any one of claims 1-7.

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