Light-emitting device, light-emitting device, light-emitting module, lighting device, display device, display module, and electronic apparatus

Abstract

Provided is a display device having a function of emitting visible light and infrared light and a light detection function. According to one embodiment of the present invention, a display unit includes a first light-emitting device, a second light-emitting device, and a light-receiving device. The first light-emitting device emits both visible light and infrared light, and the second light-emitting device emits visible light. The light-receiving device has a function of absorbing at least some of visible light and infrared light. The first light-emitting device comprises a first pixel electrode, a first light-emitting layer, a second light-emitting layer and a common electrode. The second light-emitting device comprises a second pixel electrode, a third light-emitting layer and a common electrode. The light receiving device comprises a third pixel electrode, an active layer and a common electrode. The first light-emitting layer includes a light-emitting material that emits infrared light. The second light-emitting layer and the third light-emitting layer each contain a light-emitting material that emits visible light having different wavelengths from each other. The active layer contains an organic compound.

Description

Technical Field

[0001] One embodiment of the present invention relates to a light-emitting device, a light-emitting apparatus, a light-emitting module, an electronic device, and a lighting device. One embodiment of the present invention relates to a display device, a display module, and an electronic device. One embodiment of the present invention relates to a display device including a light-receiving device and a light-emitting device.

[0002] Note that one embodiment of the present invention is not limited to the above-mentioned technical field. Examples of technical fields of one embodiment of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), driving methods of these devices, or manufacturing methods of these devices. Background Art

[0003] In recent years, display devices are expected to be used in various applications. For example, as applications of large display devices, there are household television devices (also called televisions or television receivers), digital signage, public information displays (PIDs), etc. In addition, as portable information terminals, research and development of smartphones or tablet terminals equipped with touch panels has been underway.

[0004] As a display device, for example, a light-emitting device including a light-emitting device (also referred to as a light-emitting element) has been developed. A light-emitting device (also referred to as an EL device or an EL element) utilizing the electroluminescence (hereinafter referred to as EL) phenomenon has the characteristics of being easy to achieve thinness and lightness, being able to respond to input signals at high speed, and being able to be driven by a DC low-voltage power supply, and therefore is applied to a display device. For example, Patent Document 1 discloses a flexible light-emitting device using an organic EL device (also referred to as an organic EL element).

[0005] In addition, image sensors are used for various purposes, such as personal identification, defect analysis, medical diagnosis, security fields, etc. In image sensors, the wavelength of the light source used is appropriately selected according to the purpose. In image sensors, various wavelengths of light are used, such as visible light, short wavelength light such as X-rays, and long wavelength light such as near infrared light.

[0006] The light emitting device is expected to be applied to the light source of the image sensor as described above. [Prior technical literature] [Patent Document]

[0007] [Patent Document 1] Japanese Patent Application Publication No. 2014-197522 Summary of the invention Technical problem to be solved by the invention

[0008] One of the purposes of one embodiment of the present invention is to provide a light-emitting device having the function of emitting visible light and infrared light. One of the purposes of one embodiment of the present invention is to provide a light-emitting device with high convenience. One of the purposes of one embodiment of the present invention is to provide a light-emitting device with multiple functions. One of the purposes of one embodiment of the present invention is to provide a novel light-emitting device.

[0009] One of the purposes of one embodiment of the present invention is to provide a display device having a light detection function. One of the purposes of one embodiment of the present invention is to provide a display device having a function of emitting visible light and infrared light and a light detection function. One of the purposes of one embodiment of the present invention is to provide a display device with high convenience. One of the purposes of one embodiment of the present invention is to provide a display device with multiple functions. One of the purposes of one embodiment of the present invention is to provide a novel display device.

[0010] Note that the description of the above-mentioned objects does not prevent the existence of other objects. One embodiment of the present invention does not necessarily need to achieve all of the above-mentioned objects. Objects other than the above-mentioned objects can be extracted from the description of the specification, drawings, and claims. Solutions to technical problems

[0011] One embodiment of the present invention is a light-emitting device, comprising a first light-emitting device and a second light-emitting device. The first light-emitting device comprises a first pixel electrode, a first light-emitting layer, a second light-emitting layer and a common electrode. The first light-emitting layer and the second light-emitting layer are each located between the first pixel electrode and the common electrode. The second light-emitting device comprises a second pixel electrode, a third light-emitting layer and a common electrode. The third light-emitting layer is located between the second pixel electrode and the common electrode. The first light-emitting layer comprises a light-emitting material that emits infrared light. The second light-emitting layer and the third light-emitting layer each comprise a light-emitting material that emits visible light of different wavelengths.

[0012] For example, when the first pixel electrode has the function of reflecting visible light and infrared light, the common electrode has the function of transmitting visible light and infrared light, and the second light-emitting layer includes a light-emitting material that emits blue light, the first light-emitting layer is preferably located between the first pixel electrode and the second light-emitting layer. In other words, when the light emitted by the first light-emitting device is extracted to the common electrode side, the first light-emitting layer is preferably located between the first pixel electrode and the second light-emitting layer.

[0013] The peak wavelength of the emission in the first light-emitting layer is λ a The second light-emitting layer emits light with a peak wavelength of λ b In the case of light, the light emitting region of the first light emitting layer is preferably located at an optical distance λ from the first pixel electrode. a / 4 or its vicinity, the light-emitting region of the second light-emitting layer is preferably located at an optical distance of 3λ from the first pixel electrode. b / 4 or a location close to it.

[0014] The first light-emitting device preferably also includes one or both of a hole transport layer and an electron transport layer. a The second light-emitting layer emits light with a peak wavelength of λ b In the case of light, the hole transport layer has a wavelength λ b The ordinary refractive index of light is preferably greater than the wavelength λ a The ordinary refractive index of light is greater than 0.1. b The ordinary refractive index of light is preferably greater than the wavelength λ a The ordinary refractive index of light is greater than 0.1.

[0015] For example, when the first pixel electrode has the function of transmitting visible light and infrared light, the common electrode has the function of reflecting visible light and infrared light, and the second light-emitting layer includes a light-emitting material that emits blue light, the second light-emitting layer is preferably located between the first pixel electrode and the first light-emitting layer. In other words, when the light emitted by the first light-emitting device is extracted to the first pixel electrode side, the second light-emitting layer is preferably located between the first pixel electrode and the first light-emitting layer.

[0016] The peak wavelength of the emission in the first light-emitting layer is λ a The second light-emitting layer emits light with a peak wavelength of λ b In the case of light, the light emitting region of the first light emitting layer is preferably located at an optical distance of 3λ from the first pixel electrode. a / 4 or its vicinity, the light-emitting region of the second light-emitting layer is preferably located at an optical distance λ from the first pixel electrode. b / 4 or a location close to it.

[0017] The first light emitting device preferably has a function of emitting both visible light and infrared light, and the second light emitting device preferably has a function of emitting visible light.

[0018] The first light-emitting device preferably includes a charge generation layer between the first light-emitting layer and the second light-emitting layer.

[0019] The first light emitting device and the second light emitting device preferably each have an optical microcavity resonator structure. The optical microcavity resonator structure of the first light emitting device is preferably a structure that enhances both red, green or blue light and infrared light. The optical microcavity resonator structure of the second light emitting device is preferably a structure that enhances red, green or blue light.

[0020] The light-emitting device of one embodiment of the present invention preferably further includes a third light-emitting device. The third light-emitting device includes a third pixel electrode, a first light-emitting layer, a second light-emitting layer and a common electrode. The first light-emitting device and the third light-emitting device preferably each have an optical microcavity resonator structure. The optical microcavity resonator structure of the first light-emitting device is preferably a structure that enhances infrared light. The optical microcavity resonator structure of the third light-emitting device is preferably a structure that enhances red, green or blue light.

[0021] The first light emitting device and the second light emitting device preferably further include a common layer. The common layer preferably has a region located between the first pixel electrode and the common electrode and a region located between the second pixel electrode and the common electrode.

[0022] One embodiment of the present invention is a light-emitting device, comprising a first electrode, a first light-emitting layer, a second light-emitting layer and a second electrode, the light-emitting device having the function of emitting both infrared light and visible light. The first light-emitting layer and the second light-emitting layer are each located between the first electrode and the second electrode. The first light-emitting layer includes a light-emitting material that emits infrared light. The second light-emitting layer includes a light-emitting material that emits visible light.

[0023] When the first electrode has the function of reflecting visible light and infrared light and the second electrode has the function of transmitting visible light and infrared light, the first light-emitting layer is preferably located between the first electrode and the second light-emitting layer. In this case, the second light-emitting layer preferably contains a light-emitting material that emits blue light.

[0024] The peak wavelength of the emission in the first light-emitting layer is λ a The second light-emitting layer emits light with a peak wavelength of λ b In the case of light, the light emitting region of the first light emitting layer is preferably located at an optical distance λ from the first electrode. a / 4 or its vicinity, the light-emitting region of the second light-emitting layer is preferably located at an optical distance of 3λ from the first electrode. b / 4 or a location close to it.

[0025] The light-emitting device of one embodiment of the present invention preferably further includes one or both of a hole transport layer and an electron transport layer. a The second light-emitting layer emits light with a peak wavelength of λ b In the case of light, the hole transport layer has a wavelength λ b The ordinary refractive index of light is preferably greater than the wavelength λ a The ordinary refractive index of light is greater than 0.1. b The ordinary refractive index of light is preferably greater than the wavelength λ a The ordinary refractive index of light is greater than 0.1.

[0026] When the first electrode has a function of reflecting visible light and infrared light, and the second electrode has a function of transmitting visible light and infrared light, the second light-emitting layer is preferably located between the first electrode and the first light-emitting layer.

[0027] The light-emitting device according to one embodiment of the present invention preferably further includes a charge generation layer between the first light-emitting layer and the second light-emitting layer.

[0028] The light-emitting device according to one embodiment of the present invention preferably has an optical microcavity resonator structure that enhances both red, green, or blue light and infrared light.

[0029] One embodiment of the present invention is a light emitting device including a light emitting device having the above-described structure in a light emitting portion.

[0030] One embodiment of the present invention is a display device including a first light-emitting device, a second light-emitting device and a light-receiving device in a display portion. The first light-emitting device has the function of emitting both visible light and infrared light. The second light-emitting device has the function of emitting visible light. The light-receiving device has the function of absorbing at least a portion of visible light and infrared light. The first light-emitting device includes a first pixel electrode, a first light-emitting layer, a second light-emitting layer and a common electrode. The first light-emitting layer and the second light-emitting layer are each located between the first pixel electrode and the common electrode. The second light-emitting device includes a second pixel electrode, a third light-emitting layer and a common electrode. The third light-emitting layer is located between the second pixel electrode and the common electrode. The light-receiving device includes a third pixel electrode, an active layer and a common electrode. The active layer is located between the third pixel electrode and the common electrode. The first light-emitting layer contains a light-emitting material that emits infrared light. The second light-emitting layer and the third light-emitting layer each contain a light-emitting material that emits visible light of different wavelengths. The active layer contains an organic compound.

[0031] One embodiment of the present invention is a display device including a first light-emitting device, a second light-emitting device and a light-receiving device in a display portion. The first light-emitting device has the function of emitting both visible light and infrared light. The second light-emitting device has the function of emitting visible light. The light-receiving device has the function of absorbing at least a portion of visible light and infrared light. The first light-emitting device includes a first pixel electrode, a common layer, a first light-emitting layer, a second light-emitting layer and a common electrode. The first light-emitting layer and the second light-emitting layer are each located between the first pixel electrode and the common electrode. The second light-emitting device includes a second pixel electrode, a common layer, a third light-emitting layer and a common electrode. The third light-emitting layer is located between the second pixel electrode and the common electrode. The light-receiving device includes a third pixel electrode, a common layer, an active layer and a common electrode. The active layer is located between the third pixel electrode and the common electrode. The first light-emitting layer includes a light-emitting material that emits infrared light. The second light-emitting layer and the third light-emitting layer each include a light-emitting material that emits visible light of different wavelengths. The active layer includes an organic compound. The common layer has a region located between the first pixel electrode and the common electrode, a region located between the second pixel electrode and the common electrode, and a region located between the third pixel electrode and the common electrode.

[0032] The preferred structures of the first light emitting device and the second light emitting device included in the display device are the same as the structures of the first light emitting device and the second light emitting device included in the above-mentioned light emitting device.

[0033] The display unit preferably also includes a third light-emitting device. The third light-emitting device includes a fourth pixel electrode, a first light-emitting layer, a second light-emitting layer and a common electrode. The first light-emitting device and the third light-emitting device preferably each have an optical microcavity resonator structure. The optical microcavity resonator structure of the first light-emitting device is preferably a structure that enhances infrared light. The optical microcavity resonator structure of the third light-emitting device is preferably a structure that enhances red, green or blue light.

[0034] The display unit preferably further includes a lens. The lens preferably includes a portion overlapping with the light receiving device. Light passing through the lens is incident on the light receiving device.

[0035] The display unit preferably further includes a partition wall. The partition wall preferably covers an end portion of the first pixel electrode, an end portion of the second pixel electrode, and an end portion of the third pixel electrode. The third pixel electrode is preferably electrically insulated from the first pixel electrode and the second pixel electrode via the partition wall. The partition wall preferably has a function of absorbing at least a portion of the light emitted by the first light-emitting device.

[0036] The display unit preferably further includes a coloring layer. The coloring layer preferably includes a portion in contact with the side surface of the partition wall. The coloring layer preferably includes a color filter or a black matrix.

[0037] The display portion preferably has flexibility.

[0038] One embodiment of the present invention is a module including a light-emitting device or a display device having any of the above structures, the module being mounted with a connector such as a flexible printed circuit board (FPC) or a tape carrier package (TCP), or being mounted with an integrated circuit (IC) or the like using a chip on glass (COG) method or a chip on film (COF) method, etc. Note that in this specification, etc., a module including a light-emitting device is sometimes referred to as a light-emitting module, and a module including a display device is sometimes referred to as a display module.

[0039] One embodiment of the present invention is an electronic device including at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button, and the above-mentioned modules. Effects of the Invention

[0040] According to one embodiment of the present invention, a light-emitting device having the function of emitting visible light and infrared light can be provided. According to one embodiment of the present invention, a light-emitting device with high convenience can be provided. According to one embodiment of the present invention, a light-emitting device with multiple functions can be provided. According to one embodiment of the present invention, a novel light-emitting device can be provided.

[0041] According to one embodiment of the present invention, a display device having a light detection function can be provided. According to one embodiment of the present invention, a display device having a function of emitting visible light and infrared light and a light detection function can be provided. According to one embodiment of the present invention, a display device having high convenience can be provided. According to one embodiment of the present invention, a display device having multiple functions can be provided. According to one embodiment of the present invention, a novel display device can be provided.

[0042] Note that the description of the above effects does not prevent the existence of other effects. One embodiment of the present invention does not necessarily have all of the above effects. Effects other than the above effects can be extracted from the description of the specification, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Figures 1A to 1F is a cross-sectional view showing an example of a light emitting device. FIG. 2A to FIG. 2E is a plan view showing an example of a pixel. FIG. 3A to FIG. 3D It is a diagram illustrating a stacked structure of a light emitting device. FIG. 4A to FIG. 4D It is a diagram illustrating a stacked structure of a light emitting device. FIG. 5A to FIG. 5D It is a diagram for explaining the positional relationship of light-emitting areas. Fig. 6A , Figure 6B is a cross-sectional view showing an example of a light emitting device, Figure 6C , Fig.6Dis a top view showing an example of a pixel, Fig. 6E It is a diagram illustrating a stacked structure of a light emitting device. 7A to 7C is a cross-sectional view showing an example of a light emitting device. FIG. 8A to FIG. 8C is a cross-sectional view showing an example of a light emitting device. Fig. 9 It is a perspective view showing an example of a light emitting device. Fig. 10A and Fig. 10B is a cross-sectional view showing an example of a light emitting device. Fig.11A is a cross-sectional view showing an example of a light emitting device, Fig. 11B is a cross-sectional view showing an example of a transistor. FIG. 12A to FIG. 12D is a cross-sectional view showing an example of a display device. FIG. 13A to FIG. 13E is a plan view showing an example of a pixel. FIG. 14A to FIG. 14C is a cross-sectional view showing an example of a display device. FIG. 15A to FIG. 15C is a cross-sectional view showing an example of a display device. Fig.16 is a cross-sectional view showing an example of a display device. Fig.17A and Fig. 17B is a cross-sectional view showing an example of a display device. Fig.18A is a cross-sectional view showing an example of a display device, Fig.18B is a cross-sectional view showing an example of a transistor. Fig.19 is a cross-sectional view showing an example of a display device. Fig. 20A and Fig. 20B is a circuit diagram showing an example of a pixel circuit. Fig.21A and Fig.21B is a diagram showing an example of an electronic device. FIG. 22A to FIG. 22D is a diagram showing an example of an electronic device. FIG. 23A to FIG. 23F is a diagram showing an example of an electronic device. FIG. 24A to FIG. 24D is a diagram showing a light emitting device of an embodiment. Fig.25 is a diagram showing the calculated emission spectrum used for Example 1. Fig.26It is a graph showing the emission spectrum of the calculation result of Example 1. Fig. 27 This is a diagram showing CIE1931 chromaticity coordinates of the calculation results of Example 1. Fig.28 : is a graph showing the refractive index used in the calculation of Example 1. Fig.29 is a diagram showing the calculated emission spectrum used for Example 2. Fig.30 It is a graph showing the emission spectrum of the calculation result of Example 2. Fig.31 It is a graph showing the emission spectrum of the calculation result of Example 2. Fig.32 This is a diagram showing CIE1931 chromaticity coordinates of the calculation results of Example 2. Fig.33 This is a diagram showing CIE1931 chromaticity coordinates of the calculation results of Example 2. Fig.34 is a diagram showing the calculated emission spectrum used for Example 3. Fig.35 It is a graph showing the emission spectrum of the calculation result of Example 3. Fig.36 This is a diagram showing CIE1931 chromaticity coordinates of the calculation results of Example 3. Modes for Carrying Out the Invention

[0044] The embodiments are described in detail with reference to the accompanying drawings. Note that the present invention is not limited to the following description, and a person skilled in the art can easily understand that the mode and details can be transformed into various forms without departing from the purpose and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the contents described in the embodiments shown below.

[0045] Note that in the invention structure described below, the same symbols are used in different drawings to show the same parts or parts with the same function, and repeated description is omitted. In addition, when showing parts with the same function, the same hatching is sometimes used without special additional symbols.

[0046] In addition, for ease of understanding, the positions, sizes, and ranges of various components shown in the drawings may not represent their actual positions, sizes, and ranges. Therefore, the disclosed invention is not necessarily limited to the positions, sizes, and ranges disclosed in the drawings.

[0047] In addition, the words "film" and "layer" may be interchanged depending on the situation or state. For example, "conductive layer" may be replaced with "conductive film". In addition, "insulating film" may be replaced with "insulating layer".

[0048] (Implementation Method 1) In this embodiment, refer to Figures 1A to 11B A light-emitting device according to one embodiment of the present invention will be described.

[0049] A light-emitting device according to one embodiment of the present invention includes a light-emitting device that emits visible light and infrared light and a light-emitting device that emits visible light. As the visible light, light having a wavelength of 400 nm or more and less than 750 nm can be cited, for example, red, green or blue light can be cited. As the infrared light, near-infrared light can be cited, specifically, light having a wavelength of 750 nm or more and 1300 nm or less can be cited.

[0050] A light-emitting device of one embodiment of the present invention includes a first light-emitting device and a second light-emitting device. The first light-emitting device includes a first pixel electrode, a first light-emitting layer, a second light-emitting layer and a common electrode. The first light-emitting layer and the second light-emitting layer are each located between the first pixel electrode and the common electrode. The second light-emitting device includes a second pixel electrode, a third light-emitting layer and a common electrode. The third light-emitting layer is located between the second pixel electrode and the common electrode. The first light-emitting layer includes a light-emitting material that emits infrared light. The second light-emitting layer and the third light-emitting layer each include a light-emitting material that emits visible light of different wavelengths.

[0051] The luminescent material included in the first luminescent layer preferably emits light having a maximum peak wavelength (also referred to as the wavelength with the highest peak intensity) of 750 nm or more and 1300 nm or less. The luminescent material included in the second luminescent layer and the third luminescent layer preferably emits light having a maximum peak wavelength of 400 nm or more and 750 nm or less. In this specification, etc., the peak wavelength may be referred to as the maximum peak wavelength.

[0052] A light-emitting device according to one embodiment of the present invention can be used as a light source for a sensor (e.g., an image sensor, an optical touch sensor). A light-emitting device according to one embodiment of the present invention can emit both visible light and infrared light, and thus can be combined with both a sensor in which visible light is used as a light source and a sensor in which infrared light is used as a light source, and its convenience is high. In addition, a light-emitting device according to one embodiment of the present invention can be used as a light source for a sensor in which both visible light and infrared light are used as a light source, and the functionality of the sensor can be improved. In addition, a light-emitting device according to one embodiment of the present invention can emit visible light, and thus can be used as a display device.

[0053] In addition, in a light-emitting device of one embodiment of the present invention, a structure in which one sub-pixel emits both visible light and infrared light can be adopted. For example, a structure in which any one of the three sub-pixels emitting red, green or blue emits infrared light can be adopted. When the sub-pixel emitting visible light also serves as the sub-pixel emitting infrared light, there is no need to separately provide a sub-pixel emitting infrared light. Therefore, a light-emitting device that emits both visible light and infrared light can be realized without increasing the number of sub-pixels included in one pixel. As a result, the decrease in the aperture ratio of the pixel can be suppressed, and the luminous efficiency of the light-emitting device can be improved.

[0054] In addition, in a light-emitting device of one embodiment of the present invention, the light-emitting device that emits visible light and infrared light and the light-emitting device that emits visible light may have a layer of a common structure. Therefore, the function of emitting infrared light can be added to the light-emitting device without significantly increasing the manufacturing process. For example, in the light-emitting device that emits visible light and infrared light and the light-emitting device that emits visible light, at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may have the same structure.

[0055] Figures 1A to 1F A cross-sectional view showing a light emitting device according to one embodiment of the present invention.

[0056] Figures 1A to 1F The light emitting devices 40A to 40F shown have a structure that emits red (R) light, green (G) light, blue (B) light, and infrared light (IR), respectively.

[0057] In the light emitting devices 40A to 40F, the light emitting device that emits any one of red light, green light, and blue light may also emit infrared light.

[0058] The light-emitting device of one embodiment of the present invention can adopt a top emission structure that emits light to the side opposite to the substrate on which the light-emitting device is formed, a bottom emission structure that emits light to the side of the substrate on which the light-emitting device is formed, or a double-sided emission structure that emits light to both surfaces.

[0059] Figures 1A to 1F The light emitting device is shown as emitting light toward the substrate 152 side.

[0060] Figure 1A The light emitting device 40A shown includes a light emitting device 47R, a light emitting device 47G, and a light emitting device 47B between a substrate 151 and a substrate 152 .

[0061] Figure 1B The light emitting device 40B shown includes a layer 45 having a transistor between a substrate 151 and a substrate 152 in addition to the structure of the light emitting device 40A.

[0062] In the light emitting devices 40A and 40B, the light emitting device 47R can emit both red (R) light and infrared light (IR), the light emitting device 47G can emit green (G) light, and the light emitting device 47B can emit blue (B) light.

[0063] Figure 1C The light emitting device 40C shown includes a light emitting device 47R, a light emitting device 47G, and a light emitting device 47B between a substrate 151 and a substrate 152 .

[0064] Figure 1D The light emitting device 40D shown includes a layer 45 having a transistor between the substrate 151 and the substrate 152 in addition to the structure of the light emitting device 40C.

[0065] In the light emitting devices 40C and 40D, the light emitting device 47G can emit both green (G) light and infrared light (IR), the light emitting device 47R can emit red (R) light, and the light emitting device 47B can emit blue (B) light.

[0066] Figure 1E The light emitting device 40E shown includes a light emitting device 47R, a light emitting device 47G, and a light emitting device 47B between a substrate 151 and a substrate 152 .

[0067] Figure 1F The light emitting device 40F shown includes a layer 45 having a transistor between the substrate 151 and the substrate 152 in addition to the structure of the light emitting device 40E.

[0068] In the light emitting devices 40E and 40F, the light emitting device 47B can emit both blue (B) light and infrared light (IR), the light emitting device 47R can emit red (R) light, and the light emitting device 47G can emit green (G) light.

[0069] The layer 45 having transistors includes a plurality of transistors. For example, the layer 45 having transistors includes a transistor electrically connected to the light emitting device.

[0070] The maximum peak wavelength (also referred to as a first peak wavelength) in the visible light region of the emission spectrum of the light emitting device 47B may be, for example, not less than 400 nm and not more than 480 nm.

[0071] The maximum peak wavelength (also referred to as the second peak wavelength) in the visible light region of the emission spectrum of the light emitting device 47R may be, for example, not less than 580 nm and less than 750 nm.

[0072] The maximum peak wavelength (also referred to as the third peak wavelength) in the visible light region of the emission spectrum of the light emitting device 47G may be a wavelength between the first peak wavelength and the second peak wavelength. For example, the third peak wavelength may be greater than or equal to 480 nm and less than 580 nm.

[0073] The maximum peak wavelength (also referred to as the fourth peak wavelength) in the infrared region of the emission spectrum of the light emitting device emitting infrared light may be a wavelength longer than the second peak wavelength. For example, the fourth peak wavelength may be greater than 750 nm and less than 1300 nm.

[0074] [Pixels] FIG. 2A to FIG. 2E An example of the structure of a pixel is shown.

[0075] A light-emitting device of one embodiment of the present invention has a plurality of pixels arranged in a matrix. One pixel includes one or more sub-pixels. One sub-pixel includes one light-emitting device. For example, a pixel may have a structure including three sub-pixels (three colors of R, G, and B or three colors of yellow (Y), cyan (C), and magenta (M), etc.) or a structure including four sub-pixels (four colors of R, G, B, and white (W) or four colors of R, G, B, and Y, etc.).

[0076] In the light-emitting device according to one embodiment of the present invention, at least one of the sub-pixels constituting a pixel emits visible light and infrared light.

[0077] FIG. 2A to FIG. 2C Each pixel shown includes sub-pixels (three light-emitting devices) of three colors: red (R), green (G), and blue (B). Figure 2A In the example, the red (R) sub-pixel emits infrared light (IR). Figure 2B In the example, the green (G) sub-pixel emits infrared light (IR). Figure 2C In the example, the blue (B) sub-pixel emits infrared light (IR).

[0078] Figure 2D , Figure 2E Each of the pixels shown includes sub-pixels (four light-emitting devices) of four colors, red (R), green (G), blue (B), and white (W). Figure 2D , Figure 2E The structure in which the red (R) sub-pixel emits infrared light (IR) is shown, but the present invention is not limited thereto and the structure in which the sub-pixels of other colors emit infrared light may also be used. Figure 2D An example is shown in which four sub-pixels are arranged in one row in the horizontal direction. Figure 2E An example is shown in which four sub-pixels are arranged in a 2×2 matrix.

[0079] [Structure of light emitting device] Below, refer to FIG. 3A to FIG. 5D The structure of a light-emitting device included in a light-emitting device according to one embodiment of the present invention will be described.

[0080] Note that, in this specification, when there is no special description, even when describing a structure including a plurality of elements (light-emitting device, light-emitting layer, etc.), if the description is about matters common to each element, letters are omitted for description. For example, when describing matters common to the light-emitting layer 193R and the light-emitting layer 193G, etc., it is sometimes described as the light-emitting layer 193.

[0081] FIG. 3A to FIG. 3D and FIG. 4A to FIG. 4D The light-emitting devices shown each include a light-emitting device 47R emitting red (R) light, a light-emitting device 47G emitting green (G) light, and a light-emitting device 47B emitting blue (B) light on a substrate 151 through a layer 45 having a transistor. At least one of the three light-emitting devices has a function of emitting infrared light. FIG. 3A to FIG. 3D and FIG. 4A to FIG. 4D In the drawings, (IR) is appended to the reference numeral of the light emitting device that emits infrared light.

[0082] Each color light emitting device includes a pixel electrode 191, a common electrode 115 and at least one light emitting unit. The pixel electrode 191 is provided in each light emitting device. A plurality of light emitting devices share the common electrode 115. The pixel electrode 191 and the common electrode 115 may be a single layer structure or a stacked layer structure. The light emitting unit includes at least one light emitting layer 193.

[0083] FIG. 3A to FIG. 3D and FIG. 4A to FIG. 4D A light-emitting device of a top emission structure is shown, in which a light-emitting device is formed on a substrate 151, and the light-emitting device emits light toward a common electrode 115. The common electrode 115 is an electrode that is transmissive to visible light and infrared light (also called a transparent electrode) or an electrode that is transmissive and reflective to visible light and infrared light (also called a semi-transmissive and semi-reflective electrode). The pixel electrode 191 is preferably an electrode that is reflective to visible light and infrared light (also called a reflective electrode).

[0084] The light emitting device may be a single structure including one light emitting unit between the pixel electrode 191 and the common electrode 115 , or a series structure including a plurality of light emitting units.

[0085] When the light-emitting device that emits visible light and does not emit infrared light has a single structure, productivity is improved, so it is preferred. When the light-emitting device that emits both visible light and infrared light also has a single structure, productivity is improved, so it is preferred. In addition, when the light-emitting device that emits both visible light and infrared light has a series structure, it has the advantages of easy optimization of optical distance and improved luminous intensity, so it is preferred.

[0086] FIG. 3A to FIG. 3D An example is shown in which the light-emitting devices of each color have a single structure.

[0087] Figure 3A , Figure 3B The structure in which the light emitting device 47B (IR) emits blue light and infrared light is shown.

[0088] Figure 3A The light emitting device 47R shown includes a buffer layer 192R, a light emitting layer 193R, and a buffer layer 194R in sequence between the pixel electrode 191 and the common electrode 115. The light emitting layer 193R includes a light emitting material that emits red light.

[0089] Figure 3A The light emitting device 47G shown includes a buffer layer 192G, a light emitting layer 193G, and a buffer layer 194G in sequence between the pixel electrode 191 and the common electrode 115. The light emitting layer 193G includes a light emitting material that emits green light.

[0090] Figure 3A The light emitting device 47B (IR) shown includes a buffer layer 192B, a light emitting layer 193N, a light emitting layer 193B and a buffer layer 194B in sequence between the pixel electrode 191 and the common electrode 115. The light emitting layer 193N includes a light emitting material that emits infrared light. The light emitting layer 193B includes a light emitting material that emits blue light.

[0091] In the light emitting device 47B (IR), the light emitting layer 193N is preferably located closer to the reflective electrode ( Figure 3A The position of the pixel electrode 191 in the embodiment will be described in detail later. By providing the light-emitting layer 193N between the reflective electrode and the light-emitting layer 193B so that the light-emitting layer 193B is separated from the reflective electrode, the blue light extraction efficiency can be improved.

[0092] As a layer other than the light-emitting layer 193, the light-emitting unit may further include a layer containing a substance with high hole injection property, a substance with high hole transport property, a hole blocking material, a substance with high electron transport property, a substance with high electron injection property, or a bipolar substance (a substance with high electron transport property and hole transport property), etc. In the light-emitting devices of each color, the structures of these layers may also be different from each other.

[0093] For example, in the light-emitting devices of each color, the buffer layer 192 disposed between the pixel electrode 191 and the light-emitting layer 193 preferably includes one or both of a hole injection layer and a hole transport layer. In addition, for example, in the light-emitting devices of each color, the buffer layer 194 disposed between the light-emitting layer 193 and the common electrode 115 preferably includes one or both of an electron transport layer and an electron injection layer. The buffer layers 192R, 192G, 192B, 194R, 194G, and 194B may be either single-layer structures or laminated structures.

[0094] Figure 3B The light emitting device shown is Figure 3A The light emitting device shown is different in that it includes a common layer 112 but does not include buffer layers 192R, 192G, and 192B; and it includes a common layer 114 but does not include buffer layers 194R, 194G, and 194B.

[0095] The common layer 112 preferably includes one or both of a hole injection layer and a hole transport layer. The common layer 114 preferably includes one or both of an electron transport layer and an electron injection layer. The common layers 112 and 114 may be either single-layer structures or stacked-layer structures.

[0096] In the light-emitting devices of each color, at least a part of the layers other than the light-emitting layer 193 may have a common structure. This is preferred because the number of steps for manufacturing the light-emitting device can be reduced.

[0097] Figure 3C , Figure 3D The structure in which the light emitting device 47R (IR) emits red light and infrared light is shown.

[0098] Figure 3C , Figure 3D The light emitting device 47R (IR) shown includes a common layer 112, a buffer layer 192R, a light emitting layer 193R, a light emitting layer 193N, a buffer layer 194R and a common layer 114 between a pixel electrode 191 and a common electrode 115. The light emitting layer 193R includes a light emitting material that emits red light. The light emitting layer 193N includes a light emitting material that emits infrared light.

[0099] Figure 3C The light emitting device 47R (IR) shown includes a light emitting layer 193R between a pixel electrode 191 and a light emitting layer 193N. Figure 3D The light emitting device 47R (IR) shown includes a light emitting layer 193N between the pixel electrode 191 and the light emitting layer 193R. There is no particular limitation on the stacking order of the light emitting layer 193R and the light emitting layer 193N.

[0100] Figure 3C , Figure 3DThe light emitting device 47G shown includes a common layer 112, a buffer layer 192G, a light emitting layer 193G, a buffer layer 194G, and a common layer 114 in sequence between the pixel electrode 191 and the common electrode 115. The light emitting layer 193G includes a light emitting material that emits green light.

[0101] Figure 3C , Figure 3D The light emitting device 47B shown includes a common layer 112, a buffer layer 192B, a light emitting layer 193B, a buffer layer 194B, and a common layer 114 in sequence between the pixel electrode 191 and the common electrode 115. The light emitting layer 193B includes a light emitting material that emits blue light.

[0102] like Figure 3C , Figure 3D As shown, the light-emitting devices of each color have a structure in which a part of the layer other than the light-emitting layer 193 (buffer layer) is formed for each color and another part (common layer) is used in common. In this way, by using a part of the layer other than the light-emitting layer 193 in the light-emitting devices of each color in common, the manufacturing process of the light-emitting device can be reduced, so it is preferred. Note that the light-emitting device of one embodiment of the present invention may not include the buffer layers 192R, 192G, 192B, 194R, 194G, 194B and a part of the common layers 112 and 114.

[0103] For example, in Figure 3C , Figure 3D Preferably, the common layer 112 includes a hole injection layer, the buffer layers 192R, 192G, and 192B include a hole transport layer, the buffer layers 194R, 194G, and 194B include an electron transport layer, and the common layer 114 includes an electron injection layer.

[0104] exist FIG. 4A to FIG. 4C Among them, the light-emitting device emitting infrared light has a series structure, and the other light-emitting devices have a single structure.

[0105] Figure 4A and Figure 3A The difference is that an intermediate layer 198 is included between the light emitting layer 193N and the light emitting layer 193B. Figure 4B and Figure 3B The difference is that an intermediate layer 198 is included between the light emitting layer 193N and the light emitting layer 193B. In addition, Figure 4C and Figure 3C The difference is that an intermediate layer 198 is included between the light emitting layer 193N and the light emitting layer 193R.

[0106] The intermediate layer 198 includes at least a charge generation layer. The charge generation layer is located between two light-emitting units. The charge generation layer has the function of injecting electrons into one adjacent light-emitting unit and injecting holes into the other light-emitting unit when a voltage is applied between a pair of electrodes. The intermediate layer 198 may also include a layer containing a substance with high hole injection property, a substance with high hole transport property, a hole blocking material, a substance with high electron transport property, a substance with high electron injection property, or a bipolar substance.

[0107] When a single structure including a light-emitting layer that emits infrared light (light-emitting layer 193N) and a light-emitting layer that emits visible light (light-emitting layer 193B, light-emitting layer 193G, or light-emitting layer 193R) is adopted in one light-emitting unit, excitons are shared by the two light-emitting layers, so the emission intensity of visible light and infrared light is reduced. FIG. 4A to FIG. 4C As shown, by applying a series structure in which a light emitting unit including the light emitting layer 193N and a light emitting unit including the light emitting layer 193B or the light emitting layer 193R are separated from each other to the light emitting device, the light emission intensity of visible light and infrared light can be improved.

[0108] Even when a tandem structure is applied to a light-emitting device that emits both visible light and infrared light, the light-emitting device and the other light-emitting device may share a part of a layer other than a light-emitting layer.

[0109] For example, Figure 4B The light emitting device 47B (IR) shown includes a common layer 112 between the pixel electrode 191 and the lower light emitting layer 193N, and a common layer 114 between the common electrode 115 and the upper light emitting layer 193B. The light emitting device 47B (IR) shares the common layers 112 and 114 with other light emitting devices.

[0110] also, Figure 4C The light emitting device 47R(IR) shown includes a common layer 112 and a buffer layer 192R between the pixel electrode 191 and the lower light emitting layer 193N, and includes a common layer 114 and a buffer layer 194R between the common electrode 115 and the upper light emitting layer 193B. The light emitting device 47R(IR) shares the common layer 112 and the common layer 114 with other light emitting devices, and is formed with respective buffer layers 192R and 194R.

[0111] in addition, Figure 4D The light emitting device shown is Figure 3A The light emitting device shown in the figure is different in that a buffer layer 116 is included on the common electrode 115. As the buffer layer 116, an organic film, a semiconductor film, an inorganic insulating film, etc. can be cited. Figure 4DThe light-emitting device shown has a structure that extracts the light emitted by the light-emitting device to one side of the buffer layer 116, so the buffer layer 116 preferably has a function of transmitting visible light and infrared light. Thus, the absorption of light by the buffer layer 116 can be suppressed, and the light extraction efficiency of the light-emitting device can be improved. As an organic film, a layer containing a substance with high hole injection property, a substance with high hole transport property, a hole blocking material, a substance with high electron transport property, a substance with high electron injection property, or a bipolar substance that can be used for a light-emitting device can be cited. As a semiconductor film, a semiconductor film that transmits visible light and infrared light can be cited. As an inorganic insulating film, a silicon nitride film can be cited. The buffer layer 116 preferably has a passivation function. Thus, impurities such as moisture can be suppressed from intruding into the light-emitting device. In addition, when the common electrode 115 has the function of reflecting visible light and infrared light, by providing a buffer layer 116, the light energy loss caused by the surface plasma at the common electrode 115 can be reduced.

[0112] The light emitting device preferably adopts an optical microcavity resonator (microcavity) structure. Therefore, one of a pair of electrodes included in the light emitting device is preferably an electrode that is transmissive and reflective to visible light and infrared light (semi-transmissive and semi-reflective electrode), and the other is preferably an electrode that is reflective to visible light and infrared light (reflective electrode).

[0113] The light transmittance of the transmissive electrode is 40% or more. For example, in a light-emitting device, it is preferred to use an electrode with a transmittance of 40% or more for visible light (light with a wavelength of 400 nm or more and less than 750 nm) and infrared light (light with a wavelength of 750 nm or more and 1300 nm or less). In addition, the reflectivity of the semi-transmissive / semi-reflective electrode for visible light and infrared light is 10% or more and 95% or less, preferably 30% or more and 80% or less. The reflectivity of the reflective electrode for visible light and infrared light is 40% or more and 100% or less, preferably 70% or more and 100% or less. In addition, the resistivity of these electrodes is preferably 1×10 -2 Ωcm or less.

[0114] Hereinafter, a light emitting device having a top emission structure is described as an example, in which a reflective electrode is used as the pixel electrode 191 and a semi-transmissive and semi-reflective electrode is used as the common electrode 115. When the light emitting device has a microcavity structure, light emitted from the light emitting layer 193 can be resonated between the two electrodes, and light emitted through the common electrode 115 can be enhanced.

[0115] Note that the light-emitting device may also adopt a structure (bottom emission structure) that emits light toward the pixel electrode 191 side. Specifically, a reflective electrode is used as the common electrode 115, and an electrode that transmits visible light and infrared light (also called a transparent electrode) or a semi-transmissive and semi-reflective electrode is used as the pixel electrode 191, thereby making it possible to emit light toward the pixel electrode 191 side.

[0116] The materials and thickness of a pair of electrodes included in the light-emitting devices of each color can be the same, thereby reducing the manufacturing cost of the light-emitting device and simplifying the manufacturing process.

[0117] The light-emitting devices of each color have different structures. In the light-emitting device 47R that emits red light, it is preferred to adjust the thickness of the light-emitting unit so that the optical distance between a pair of electrodes is an optical distance that enhances red light emission. Similarly, in the light-emitting device 47G that emits green light, it is preferred to adjust the thickness of the light-emitting unit so that the optical distance between a pair of electrodes is an optical distance that enhances green light emission. In addition, in the light-emitting device 47B that emits blue light, it is preferred to adjust the thickness of the light-emitting unit so that the optical distance between a pair of electrodes is an optical distance that enhances blue light emission. Furthermore, in the light-emitting device that emits infrared light, the optical distance between a pair of electrodes is preferably an optical distance that also enhances infrared light emission. That is, in the light-emitting device that emits both visible light and infrared light, it is preferred to adjust the thickness of the light-emitting unit so as to obtain an optical distance that enhances both visible light (red, green or blue) and infrared light. Here, in the case where the semi-transmissive and semi-reflective electrode has a laminated structure of a reflective electrode and a transparent electrode, the optical distance between a pair of electrodes refers to the optical distance between a pair of reflective electrodes.

[0118] Specifically, when the wavelength of light obtained from the light emitting layer 193 is λ, the optical distance between the pixel electrode 191 and the common electrode 115 is preferably adjusted to nλ / 2 (n is a natural number) or in the vicinity thereof.

[0119] In this specification, the wavelength λ of light obtained from the light emitting layer 193 may be the peak wavelength (particularly the maximum peak wavelength) of the light emitting layer 193. In this specification, the vicinity of the wavelength X refers to a range within ±20 nm of X, preferably within ±10 nm of X.

[0120] When a microcavity structure is used, light of a wavelength of a value divided by an integer of a multiple of the optical distance between a pair of electrodes (including the phase shift caused by reflection) can be enhanced and extracted. For example, when the optical distance is 500nm, light of (500×2 / 1=)1000nm, (500×2 / 2=)500nm, (500×2 / 3=)333nm, (500×2 / 4=)250nm, etc. can be enhanced and extracted. In addition, when the optical distance is 500nm, light of (500×3 / 1=)1500nm, (500×3 / 2=)750nm, (500×3 / 3=)500nm, (500×3 / 4=)375nm, etc. can also be enhanced and extracted.

[0121] Therefore, by adopting an optical distance equivalent to a common multiple of visible light and infrared light, both visible light and infrared light can be extracted efficiently.

[0122] Several specifications are defined as quality indicators for full-color display. For example, in order to unify the color reproducibility of devices such as displays, printers, digital cameras or scanners, the sRGB specification, an international standard color space specification defined by the IEC (International Electrotechnical Commission), is widely used. Other specifications include: the color gamut specification for analog television defined by the National Television System Committee of the United States, namely the NTSC specification; the international unified specification for digital movies, namely the DCI-P3 (Digital Cinema Initiatives) specification; the high-resolution UHDTV (Ultra High Definition Television) specification defined by NHK (Japan Broadcasting Corporation), namely Recommendation ITU-R BT.2020 (hereinafter referred to as BT.2020), etc. Since the wavelengths of R, G, and B are defined by the above-mentioned specification values, the wavelength of infrared light that can be extracted together with visible light is limited.

[0123] For example, Table 1 shows the wavelengths of light corresponding to R, G, and B and their n-order light (n is a natural number) specified in BT.2020.

[0124] [Table 1] n 1 2 3 4 5 6 R 630nm 1260nm 1890nm 2520nm 3150nm 3780nm G 532nm 1064nm 1596nm 2128nm 2660nm 3192nm B 467nm 934nm 1401nm 1868nm 2335nm 2802nm

[0125] According to Table 1, the wavelength of infrared light that can be extracted by enhancing any one of the R, G, and B lights specified by BT.2020 using a microcavity structure can be estimated. Note that when n is too large, the light extraction efficiency decreases, so n is preferably greater than 1 and less than 3, and more preferably 1 or 2. Therefore, it can be seen that the wavelength of infrared light extracted by enhancing any one of the R, G, and B lights is 934nm, 1064nm, 1260nm corresponding to n=2 for R, G, and B, and 798nm, 945nm, etc. corresponding to n=3 divided by 2 for R and G.

[0126] Therefore, it is preferable to appropriately determine which color of n-th order light to use according to the wavelength of infrared light to be extracted.

[0127] In addition, in order to improve the light extraction efficiency of the light-emitting device, in addition to the optical distance between a pair of electrodes, the optical distance between the area of ​​the light-emitting layer 193 that obtains the desired light (light-emitting area) and the electrode where reflection occurs is also very important. Specifically, the optical distance between the pixel electrode 191 and the light-emitting area is (2m'+1)λ / 4 or thereabouts, and the optical distance between the common electrode 115 and the light-emitting area is (2M+1)λ / 4 or thereabouts (m' and M are 0 or natural numbers, and n=m'+M+1), thereby efficiently extracting light. Here, the light-emitting area refers to the recombination area of ​​holes and electrons in the light-emitting layer.

[0128] Figure 5A , Figure 5B An example of using secondary light (n=2) of visible light is shown. That is, the wavelength λi of infrared light is twice the wavelength λv of visible light. The optical distance between a pair of electrodes is λi / 2=λv. Figure 5A , Figure 5B As shown, when the secondary light of visible light is used, there are two combinations of preferred positions of the light emitting area of ​​visible light and the light emitting area of ​​infrared light.

[0129] Figure 5A The following example is shown: the optical distance between the pixel electrode 191 and the visible light emitting area EM (V) is λv / 4, the optical distance between the common electrode 115 and the visible light emitting area EM (V) is 3λv / 4, the optical distance between the pixel electrode 191 and the infrared light emitting area EM (IR) is λi / 4, and the optical distance between the common electrode 115 and the infrared light emitting area EM (IR) is λi / 4.

[0130] Figure 5BThe following example is shown: the optical distance between the pixel electrode 191 and the light-emitting area EM (V) of visible light is 3λv / 4, the optical distance between the common electrode 115 and the light-emitting area EM (V) of visible light is λv / 4, the optical distance between the pixel electrode 191 and the light-emitting area EM (IR) of infrared light is λi / 4, and the optical distance between the common electrode 115 and the light-emitting area EM (IR) of infrared light is λi / 4.

[0131] Here, when a specific metal film (for example, a metal film containing a precious metal such as silver) is used as a reflective electrode, the light extraction efficiency is sometimes reduced due to the influence of surface plasmon resonance (SPR). This is because light resonates with the inherent plasma vibration of the metal on the surface of the metal film or in its vicinity, and light of a wavelength corresponding to the inherent vibration cannot be extracted. The closer the optical distance between the reflective electrode and the light-emitting region of the light-emitting layer, the more likely the above phenomenon is to occur. In addition, the above phenomenon is likely to occur in a light-emitting device that emits blue light.

[0132] Therefore, in the light-emitting device 47B emitting blue light with a top emission structure, the optical distance between the pixel electrode 191 and the light-emitting region of the light-emitting layer 193B is preferably adjusted to (2m′+1)λ / 4 (m′ is a natural number) or thereabouts.

[0133] That is, the light emitting device 47B (IR) emitting blue light and infrared light of the top emission structure is preferably Figure 5B The structure shown. Figure 5A Compared with the structure of Figure 5B The structure can increase the optical distance between the pixel electrode 191 (reflective electrode) and the light-emitting region of the blue light-emitting layer 193B, thereby suppressing the image of the surface plasmon resonance and improving the light extraction efficiency.

[0134] exist Figure 3A , Figure 3B , Figure 4A , Figure 4B In the light emitting device 47B (IR) shown, the light emitting layer 193B is provided on the pixel electrode 191 via the light emitting layer 193N. In this way, by providing the light emitting layer 193B emitting blue light having a wavelength shorter than infrared light at a position farther from the pixel electrode 191 (reflective electrode) than the light emitting layer 193N emitting infrared light, the blue light extraction efficiency can be improved.

[0135] On the other hand, the light-emitting device of the bottom emission structure uses a reflective electrode as the common electrode 115. Therefore, in the light-emitting device of the bottom emission structure that emits blue light, it is preferable to adjust the optical distance between the common electrode 115 and the light-emitting region of the light-emitting layer 193B to (2M+1)λ / 4 (M is a natural number) or thereabouts.

[0136] That is to say, the bottom emission structure light emitting device emitting blue light and infrared light preferably adopts Figure 5A The structure shown. Figure 5B Compared with the structure of Figure 5A The structure can increase the optical distance between the common electrode 115 (reflective electrode) and the light-emitting region of the blue light-emitting layer 193B, thereby suppressing the influence of surface plasmon resonance and improving light extraction efficiency.

[0137] In a bottom emission structure light emitting device that emits blue light and infrared light, for example, the light emitting layer 193N is preferably located closer to the reflective electrode (common electrode 115) than the light emitting layer 193B. By providing the light emitting layer 193N between the reflective electrode and the light emitting layer 193B so that the light emitting layer 193B is separated from the reflective electrode, the blue light extraction efficiency can be improved.

[0138] In addition, the light emitting device 47R (IR) that emits red light and infrared light or the light emitting device 47G (IR) that emits green light and infrared light may be used. Figure 5A , Figure 5B Note that, depending on the wavelength, the preferred structure sometimes differs depending on the light extraction direction for the reasons described above.

[0139] By performing the above optical adjustment, the spectrum of the specific monochromatic light that can be obtained from the light emitting layer 193 can be narrowed, thereby obtaining light with good color purity. In addition, the decrease in light extraction efficiency of the light emitting device can be suppressed, and the power consumption of the light emitting device can be reduced.

[0140] Strictly speaking, the optical distance between the pixel electrode 191 and the common electrode 115 is represented by a value obtained by adding the product of the distance from the reflection surface in the pixel electrode 191 to the reflection surface in the common electrode 115 and the refractive index and the phase shift caused by reflection. However, it is difficult to strictly determine the reflection surface and the phase shift in the pixel electrode 191 and the common electrode 115. Therefore, it is assumed here that when any position in the pixel electrode 191 and the common electrode 115 is a reflection surface and an arbitrary phase shift is assumed, the above-mentioned effect can be fully obtained.

[0141] Similarly, strictly speaking, the optical distance between the pixel electrode 191 and the light-emitting region is represented by the value obtained by adding the product of the distance from the reflection surface in the pixel electrode 191 to the light-emitting region in the light-emitting layer and the refractive index and the phase shift caused by reflection. However, it is difficult to strictly determine the reflection surface and phase shift in the pixel electrode 191 and the light-emitting region in the light-emitting layer. Therefore, it is assumed here that when any position in the pixel electrode 191 is a reflection surface, an arbitrary phase shift is assumed, and any position in the light-emitting layer is a light-emitting region, the above-mentioned effect can be fully obtained.

[0142] For example, the light emitting region in the light emitting layer 193 may be assumed to be a surface on the pixel electrode 191 side, a surface on the common electrode 115 side, or the center of the light emitting layer 193 .

[0143] In addition, in the light emitting device 47B (IR), the optical distance between the pair of electrodes is preferably adjusted to the wavelength of the blue light emitted by the light emitting layer 193B and 1 / 2 of the wavelength of the infrared light emitted by the light emitting layer 193N. In the light emitting device 47R, the optical distance between the pair of electrodes is preferably adjusted to 1 / 2 of the wavelength of the red light emitted by the light emitting layer 193R. In the light emitting device 47G, the optical distance between the pair of electrodes is preferably adjusted to 1 / 2 of the wavelength of the green light emitted by the light emitting layer 193G. By adopting this structure, the light extraction efficiency of each color can be improved.

[0144] In a light-emitting device including light-emitting devices of three colors, R, G, and B, in order to set the optical distance between a pair of electrodes of R and G to 1 / 2 of the wavelength of each color and the optical distance between a pair of electrodes of B to the wavelength of blue, it is necessary to form layers other than the light-emitting layer in each of R, G, and B, respectively, so that productivity is likely to decrease. In addition, when R, G, and B use layers other than the light-emitting layer in common, from the viewpoint of improving the efficiency of blue light emission, the thickness of the layer provided in common for the three colors is very thick, so the optical distance between a pair of electrodes of the three colors is the wavelength of each color.

[0145] On the other hand, in a structure in which a light-emitting device emitting blue light emits infrared light in one embodiment of the present invention, in order to set the optical distance between a pair of electrodes to a blue wavelength, the thickness of the light-emitting layer or light-emitting unit emitting infrared light can be adjusted. Therefore, there is no need to increase the thickness of the layer used in common with the light-emitting device emitting red light and green light. Thus, a light-emitting device in which the optical distance between a pair of electrodes of R and G is 1 / 2 of the wavelength of each color and the optical distance between a pair of electrodes of B is a blue wavelength can be manufactured with high productivity.

[0146] Figure 5C , Figure 5DAn example using tertiary visible light (n=3) is shown. The wavelength λi of infrared light is three times the wavelength λv of visible light divided by 2. The optical distance between a pair of electrodes is λi=3λv / 2. Figure 5C , Figure 5D As shown, when tertiary light of visible light is used, there are six combinations of preferred positions of the light emitting area of ​​visible light and the light emitting area of ​​infrared light.

[0147] Figure 5C The following example is shown: the optical distance between the pixel electrode 191 and the infrared light emitting region EM (IR) is λi / 4, and the optical distance between the common electrode 115 and the infrared light emitting region EM (IR) is 3λi / 4.

[0148] Figure 5D The following example is shown: the optical distance between the pixel electrode 191 and the infrared light emitting region EM (IR) is 3λi / 4, and the optical distance between the common electrode 115 and the infrared light emitting region EM (IR) is λi / 4.

[0149] exist Figure 5C , Figure 5D As shown in the position (a) of the visible light emitting area, the optical distance between the pixel electrode 191 and the visible light emitting area EM (V) is λv / 4, and the optical distance between the common electrode 115 and the visible light emitting area EM (V) is 5λv / 4.

[0150] exist Figure 5C , Figure 5D As shown in the position (b) of the visible light emitting area, the optical distance between the pixel electrode 191 and the visible light emitting area EM (V) is 3λv / 4, and the optical distance between the common electrode 115 and the visible light emitting area EM (V) is 3λv / 4.

[0151] exist Figure 5C , Figure 5D At the position (c) of the visible light emitting area shown, the optical distance between the pixel electrode 191 and the visible light emitting area EM (V) is 5λv / 4, and the optical distance between the common electrode 115 and the visible light emitting area EM (V) is λv / 4.

[0152] In the tandem structure, it is preferred that the distance between the light-emitting layer emitting visible light and the light-emitting layer emitting infrared light be long, thereby Figure 5C The positions (b) and (c) of the luminous regions of visible light are preferred, while Figure 5D The positions (a) and (b) of the luminous area of ​​visible light are preferred.

[0153] In a single structure, it is preferred that the distance between the light-emitting layer emitting visible light and the light-emitting layer emitting infrared light be short, thereby Figure 5CThe position (a) of the luminous region of visible light is preferred, while Figure 5D The position (c) of the luminous region of visible light is preferred.

[0154] In addition, the refractive index of the organic film constituting the light-emitting device has wavelength dependence. By utilizing the wavelength dependence of the refractive index, infrared light of a desired wavelength can be extracted.

[0155] There is a tendency for the refractive index of the organic film to become lower in the wavelength region from visible light to infrared light. When the refractive index decreases, even at the same thickness, the optical path length varies according to the color, and the longer the wavelength of the light, the shorter the optical distance. In particular, the difference between the refractive index of the wavelength of blue light and the refractive index of the wavelength of infrared light is very large. For example, when the secondary light of blue light is used, the wavelength of infrared light that can be extracted is sometimes less than twice the wavelength of blue light. By utilizing the wavelength dependence of the refractive index of the organic film, the wavelength of the extracted infrared light can be controlled. In addition, when anisotropy of the refractive index is generated in the film, it is preferred to use the value of the ordinary light refractive index to control the wavelength of the extracted infrared light.

[0156] For example, in the hole transport layer included in the light-emitting device, the ordinary light refractive index relative to the light of wavelength λv of visible light is preferably greater than the ordinary light refractive index relative to the light of wavelength λi of infrared light by more than 0.1, and more preferably greater than 0.2. In addition, in the electron transport layer included in the light-emitting device, the ordinary light refractive index relative to the light of wavelength λv of visible light is preferably greater than the ordinary light refractive index relative to the light of wavelength λi of infrared light by more than 0.1, and more preferably greater than 0.2. Thereby, the peak wavelength of the extracted infrared light can be shifted to the short wavelength side.

[0157] [Modifications] Fig. 6A , Figure 6B A cross-sectional view showing a light emitting device according to one embodiment of the present invention.

[0158] Fig. 6A , Figure 6B The light emitting device 40G and the light emitting device 40H shown in the figure each have a structure for emitting red (R) light, green (G) light, blue (B) light, and infrared light (IR).

[0159] The light emitting device 40G and the light emitting device 40H include a light emitting device for extracting infrared light in addition to the light emitting devices for extracting red light, green light, and blue light.

[0160] Fig. 6A The light emitting device 40G shown includes a light emitting device 47R, a light emitting device 47G, a light emitting device 47B, and a light emitting device 47N between a substrate 151 and a substrate 152 .

[0161] Figure 6B The light emitting device 40H shown includes a layer 45 having a transistor between the substrate 151 and the substrate 152 in addition to the structure of the light emitting device 40G.

[0162] In the light emitting devices 40G and 40H, the light emitting device 47R may emit red (R) light, the light emitting device 47G may emit green (G) light, the light emitting device 47B may emit blue (B) light, and the light emitting device 47N may emit infrared light (IR).

[0163] Figure 6C , Fig.6D An example of the structure of a pixel is shown. Figure 6C , Fig.6D Each of the pixels shown includes four sub-pixels (four light-emitting devices) of red (R), green (G), blue (B), and infrared light. Figure 6C An example is shown in which four sub-pixels are arranged in one row in the horizontal direction. Fig.6D An example is shown in which four sub-pixels are arranged in a 2×2 matrix.

[0164] Fig. 6E A structural example of a light-emitting device included in a light-emitting device according to one embodiment of the present invention is shown.

[0165] Fig. 6E The light-emitting device shown includes a light-emitting device 47R emitting red (R) light, a light-emitting device 47G emitting green (G) light, a light-emitting device 47B emitting blue (B) light, and a light-emitting device 47N emitting infrared light (IR) on a substrate 151 through a layer 45 having transistors.

[0166] Fig. 6E The structure between a pair of electrodes of the light emitting device 47R emitting red light and the light emitting device 47N emitting infrared light shown in the figure can be the same. In this case, the light emitting device 47R and the light emitting device 47N both adopt a structure that emits red light and infrared light. In the light emitting device 47N, the red light is shielded by the filter 141a disposed on the common electrode 115, and only the infrared light is extracted to the outside. In the light emitting device 47R, the infrared light is shielded by the filter 141b disposed on the common electrode 115, and only the red light is extracted to the outside.

[0167] Alternatively, the light emitting layer 193R and the light emitting layer 193N may be provided on both the light emitting device 47R and the light emitting device 47N, and the thickness of the light emitting unit may be adjusted so that only red light or infrared light is extracted.

[0168] As described above, by adopting a common structure in a light-emitting device that emits visible light and a light-emitting device that emits infrared light, a sub-pixel that emits infrared light can be provided without significantly increasing the manufacturing process of the light-emitting device.

[0169] Below, refer to Figures 7A to 8C The structure of a light emitting device according to one embodiment of the present invention is described. Hereinafter, the light emitting device emitting G and B light among the light emitting devices of three colors, R, G, and B, is mainly described. The light emitting device emitting R light may have the same structure as the light emitting device emitting G light.

[0170] [Light emitting device 30A] Fig. 7A A cross-sectional view of a light emitting device 30A is shown.

[0171] The light emitting device 30A includes a light emitting device 190B and a light emitting device 190G. The light emitting device 190B has a function of emitting blue light 21B and infrared light 21N. The light emitting device 190G has a function of emitting green light 21G.

[0172] The light emitting device 190B includes a pixel electrode 191, a buffer layer 192B, a light emitting layer 193B, a light emitting layer 193N, a buffer layer 194B, and a common electrode 115. Fig. 7A The light emitting layer 193B and the light emitting layer 193N are shown as one layer, but the light emitting layer 193B and the light emitting layer 193N are preferably different layers from each other. Since the light emitting device 190B has a top emission structure, as described above, the light emitting layer 193N is preferably included between the pixel electrode 191 and the light emitting layer 193B.

[0173] The light emitting device 190G includes a pixel electrode 191 , a buffer layer 192G, a light emitting layer 193G, a buffer layer 194G, and a common electrode 115 .

[0174] The pixel electrode 191 , the buffer layer 192B, the buffer layer 192G, the light-emitting layer 193B, the light-emitting layer 193N, the light-emitting layer 193G, the buffer layer 194B, the buffer layer 194G and the common electrode 115 may be either a single-layer structure or a stacked-layer structure.

[0175] The pixel electrode 191 is located on the insulating layer 214. The pixel electrode 191 included in each light emitting device can be formed using the same material and the same process.

[0176] In the light emitting device 30A, layers other than the light emitting layer included in the light emitting device are also formed separately for each color. Specifically, an example is shown in which there is no common layer between a pair of electrodes (pixel electrode 191 and common electrode 115) in the light emitting device 190B and the light emitting device 190G.

[0177] As the light emitting device 190B and the light emitting device 190G, the pixel electrode 191 is formed on the insulating layer 214 using the same material and the same process, the buffer layer 192B, the light emitting layer 193N, the light emitting layer 193B and the buffer layer 194B are formed on one pixel electrode 191, and the buffer layer 192G, the light emitting layer 193G and the buffer layer 194G are formed on the other pixel electrode 191, and then the common electrode 115 is formed in a manner covering the two pixel electrodes 191, the buffer layer 192B, the light emitting layer 193N, the light emitting layer 193B, the buffer layer 194B, the buffer layer 192G, the light emitting layer 193G and the buffer layer 194G. There is no particular limitation on the order of forming the stacked structure of the buffer layer 192B, the light emitting layer 193N, the light emitting layer 193B and the buffer layer 194B, and the stacked structure of the buffer layer 192G, the light emitting layer 193G and the buffer layer 194G. For example, the buffer layer 192G, the light-emitting layer 193G, and the buffer layer 194G may be formed after the buffer layer 192B, the light-emitting layer 193N, the light-emitting layer 193B, and the buffer layer 194B are formed. Conversely, the buffer layer 192G, the light-emitting layer 193G, and the buffer layer 194G may be formed before the buffer layer 192B, the light-emitting layer 193N, the light-emitting layer 193B, and the buffer layer 194B are formed. In addition, the buffer layer 192B, the buffer layer 192G, the light-emitting layer 193N, and the buffer layer 194G may be formed alternately in the order of the buffer layer 192B, the buffer layer 192G, and the light-emitting layer 193N.

[0178] As the buffer layer 192B and the buffer layer 192G, for example, one or both of a hole injection layer and a hole transport layer can be formed.

[0179] The light-emitting layer 193B and the light-emitting layer 193N overlap the pixel electrode 191 via the buffer layer 192B. The light-emitting layer 193B and the light-emitting layer 193N overlap the common electrode 115 via the buffer layer 194B. The light-emitting layer 193B includes a light-emitting material that emits blue light. The light-emitting layer 193N includes a light-emitting material that emits infrared light.

[0180] The light emitting layer 193G overlaps with the pixel electrode 191 via the buffer layer 192G. The light emitting layer 193G overlaps with the common electrode 115 via the buffer layer 194G. The light emitting layer 193G includes a light emitting material that emits green light.

[0181] As the buffer layer 194B and the buffer layer 194G, for example, one or both of an electron injection layer and an electron transport layer can be formed.

[0182] The common electrode 115 has a portion overlapping the pixel electrode 191 via the buffer layer 192B, the light-emitting layer 193B, the light-emitting layer 193N, and the buffer layer 194B. In addition, the common electrode 115 has a portion overlapping the pixel electrode 191 via the buffer layer 192G, the light-emitting layer 193G, and the buffer layer 194G. The light-emitting device 190B and the light-emitting device 190G share the common electrode 115.

[0183] The light-emitting device 30A includes a light-emitting device 190B, a light-emitting device 190G, a transistor 42 , and the like between a pair of substrates (a substrate 151 and a substrate 152 ).

[0184] It is preferable that a light shielding layer BM is provided on the surface of the substrate 152 on the substrate 151 side. The light shielding layer BM has an opening at a position overlapping with each light emitting device.

[0185] In addition, if Figure 7B As shown, the light shielding layer BM may not be included.

[0186] As the light shielding layer BM, a material that shields light from the light emitting device 190 can be used. The light shielding layer BM preferably absorbs visible light. As the light shielding layer BM, for example, a metal material or a resin material containing a pigment (carbon black, etc.) or a dye can be used to form a black matrix. The light shielding layer BM can also adopt a stacked structure of a red color filter, a green color filter, and a blue color filter.

[0187] In the light emitting device 190 of each color, the buffer layer 192 , the light emitting layer 193 , and the buffer layer 194 respectively positioned between the pixel electrode 191 and the common electrode 115 may be referred to as an EL layer.

[0188] The pixel electrode 191 preferably has a function of reflecting visible light and infrared light. The end of the pixel electrode 191 is covered by the partition wall 216. The common electrode 115 has a function of transmitting visible light and infrared light. The light emitting device 190 is an electroluminescent device that emits light toward the substrate 152 side when a voltage is applied between the pixel electrode 191 and the common electrode 115 (refer to light 21B, light 21G, infrared light 21N).

[0189] The pixel electrode 191 is electrically connected to a source or a drain included in the transistor 42 through an opening provided in the insulating layer 214. An end portion of the pixel electrode 191 is covered by a partition wall 216. The transistor 42 has a function of controlling driving of the light emitting device 190.

[0190] The light emitting device 190 is preferably covered by a protective layer 195. Fig. 7AIn the embodiment, the protective layer 195 is disposed on the common electrode 115 and in contact with the common electrode 115. By providing the protective layer 195, it is possible to suppress the intrusion of impurities such as water into the light-emitting device 190, thereby improving the reliability of the light-emitting device 190. In addition, the protective layer 195 and the substrate 152 are attached using the adhesive layer 142. In addition, the protective layer 195 may include the buffer layer 116, or may also serve as the buffer layer 116. In addition, the protective layer 195 may also be disposed on the common electrode 115 via the buffer layer 116.

[0191] In addition, if Figure 7B As shown, the protective layer may not be included on the light emitting device 190. Figure 7B In the embodiment, the common electrode 115 and the substrate 152 are attached using the adhesive layer 142 .

[0192] [Light emitting device 30B] Figure 7B FIG. 2 is a cross-sectional view of a light emitting device 30B. Note that in the following description of the light emitting device, description of the same structure as that of the light emitting device described previously may be omitted.

[0193] The light emitting device 30B is different from the light emitting device 30A in that the light emitting device 30B includes the common layer 112 but does not include the buffer layer 192B and the buffer layer 192G.

[0194] The common layer 112 is located on the pixel electrode 191. The common layer 112 is commonly used by the light emitting device 190B and the light emitting device 190G.

[0195] As the common layer 112, for example, one or both of a hole injection layer and a hole transport layer may be formed. The common layer 112 may be a single-layer structure or a stacked-layer structure.

[0196] By using at least a part of the layers other than the light-emitting layer in common regardless of the color of the light-emitting device, it is possible to reduce the number of steps in manufacturing the light-emitting device, which is preferred.

[0197] [Light emitting device 30C] Figure 7C A cross-sectional view of a light emitting device 30C is shown.

[0198] The light emitting device 30C is different from the light emitting device 30A in that it includes the common layer 114 but does not include the buffer layer 194B and the buffer layer 194G.

[0199] The common layer 114 is located on the partition wall 216, the light emitting layer 193B, the light emitting layer 193N, and the light emitting layer 193G. The light emitting device 190B and the light emitting device 190G use the common layer 114 in common.

[0200] As the common layer 114, for example, one or both of an electron injection layer and an electron transport layer may be formed. The common layer 114 may have a single layer structure or a stacked layer structure.

[0201] By using at least a part of the layers other than the light-emitting layer in common regardless of the color of the light-emitting device, it is possible to reduce the number of steps in manufacturing the light-emitting device, which is preferred.

[0202] [Light emitting device 30D] Fig. 8A A cross-sectional view of a light emitting device 30D is shown.

[0203] The light emitting device 30D is different from the light emitting device 30A in that the light emitting device 30D includes the common layers 112 and 114 but does not include the buffer layers 192B, 192G, 194B, and 194G.

[0204] By using all layers other than the light-emitting layer in common regardless of the color of the light-emitting device, it is possible to further reduce the number of steps in manufacturing the light-emitting device, which is preferred.

[0205] [Light emitting device 30E] Figure 8B A cross-sectional view of a light emitting device 30E is shown.

[0206] The light emitting device 30E is different from the light emitting device 30D in that an intermediate layer 198 is included between the light emitting layer 193N and the light emitting layer 193B. That is, the light emitting device 190B of the light emitting device 30D has a single structure, while the light emitting device 190B of the light emitting device 30E has a tandem structure. In addition, the light emitting device 190G that does not emit infrared light preferably has a single structure.

[0207] When the light-emitting device emitting visible light and infrared light has a single structure, the productivity of the light-emitting device is improved, so it is preferred. In addition, when the light-emitting device emitting visible light and infrared light has a series structure, it has the advantages of easy optimization of optical distance and improved luminous intensity, so it is preferred.

[0208] [Light emitting device 30F] Figure 8C A cross-sectional view of a light emitting device 30F is shown.

[0209] Figure 8C The light emitting device 30F shown is different from the light emitting device 30A in that it includes a substrate 153 , a substrate 154 , an adhesive layer 155 , and an insulating layer 212 instead of the substrate 151 and the substrate 152 .

[0210] The substrate 153 and the insulating layer 212 are bonded together by the adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by the adhesive layer 142.

[0211] The light emitting device 30F is formed by transferring the insulating layer 212, the transistor 42, the light emitting device 190, etc. formed on the manufacturing substrate onto the substrate 153. The substrate 153 and the substrate 154 are preferably flexible. Thus, the flexibility of the light emitting device 30F can be improved. For example, a resin is preferably used as the substrate 153 and the substrate 154.

[0212] As the substrate 153 and the substrate 154, the following materials can be used: polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resins, acrylic resins, polyimide resins, polymethyl methacrylate resins, polycarbonate (PC) resins, polyether sulfone (PES) resins, polyamide resins (nylon, aramid, etc.), polysiloxane resins, cycloolefin resins, polystyrene resins, polyamide-imide resins, polyurethane resins, polyvinyl chloride resins, polyvinylidene chloride resins, polypropylene resins, polytetrafluoroethylene (PTFE) resins, ABS resins, cellulose nanofibers, etc. One or both of the substrates 153 and 154 may be made of glass having a thickness that allows flexibility.

[0213] The substrate of the light-emitting device of this embodiment can use a film with high optical isotropy. Examples of the film with high optical isotropy include cellulose triacetate (also called TAC: Cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film.

[0214] The following reference Figures 9 to 11B A more detailed structure of a light-emitting device according to one embodiment of the present invention will be described.

[0215] [Light-emitting device 200A] Fig. 9 A perspective view showing a light emitting device 200A is shown. Fig. 10A A cross-sectional view of a light emitting device 200A is shown.

[0216] The light emitting device 200A has a structure in which a substrate 152 and a substrate 151 are bonded together. Fig. 9 In FIG. 1 , the substrate 152 is indicated by a dotted line.

[0217] The light emitting device 200A includes a light emitting unit 163 , a circuit 164 , a wiring 165 , and the like. Fig. 9 FIG. 2 shows an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted in the light emitting device 200A. Fig. 9 The structure shown is called a light emitting module including the light emitting device 200A, an IC, and an FPC.

[0218] As the circuit 164 , for example, a scanning line driving circuit can be used.

[0219] The wiring 165 has a function of supplying a signal and power to the light emitting unit 163 and the circuit 164. The signal and power are input to the wiring 165 from the outside via the FPC 172 or from the IC 173.

[0220] Fig. 9 An example of providing IC 173 on substrate 151 by COG (Chip On Glass) method or COF (Chip on Film) method is shown. As IC 173, for example, an IC including a scanning line driving circuit or a signal line driving circuit can be used. Note that the light emitting device 200A and the light emitting module do not necessarily have to be provided with an IC. In addition, the IC can also be mounted on an FPC by using a COF method or the like.

[0221] Fig. 10A Show Fig. 9 The light emitting device 200A shown is an example of a cross section of a portion of a region including the FPC 172 , a portion of a region including the circuit 164 , a portion of a region including the light emitting portion 163 , and a portion of a region including an end portion.

[0222] Fig. 10A The light emitting device 200A shown includes a transistor 201 , a transistor 206 , a transistor 207 , a light emitting device 190B and a light emitting device 190G, a protective layer 195 , etc. between a substrate 151 and a substrate 152 .

[0223] The substrate 151 and the substrate 152 are bonded together by the adhesive layer 142. As a seal for the light emitting device 190B and the light emitting device 190G, a solid sealing structure or a hollow sealing structure may be used. Fig. 10A In the embodiment, the substrate 151, the adhesive layer 142, and the space 143 surrounded by the substrate 152 are filled with an inert gas (nitrogen, argon, etc.), and a hollow sealed structure is adopted. The adhesive layer 142 may also overlap with the light emitting device 190. In addition, the substrate 151, the adhesive layer 142, and the space 143 surrounded by the substrate 152 may also be filled with a resin different from the adhesive layer 142.

[0224] The light emitting device 190B has a stacked structure in which a pixel electrode 191B, a common layer 112, a light emitting layer 193N, a light emitting layer 193B, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191B is connected to the conductive layer 222b included in the transistor 206 through an opening formed in the insulating layer 214. The transistor 206 has a function of controlling the driving of the light emitting device 190B.

[0225] The light emitting device 190G has a stacked structure in which a pixel electrode 191G, a common layer 112, a light emitting layer 193G, a common layer 114, and a common electrode 115 are stacked in sequence from one side of the insulating layer 214. The pixel electrode 191G is connected to the conductive layer 222b included in the transistor 207 through an opening formed in the insulating layer 214. The transistor 207 has a function of controlling the driving of the light emitting device 190G.

[0226] The partition wall 216 covers the end of the pixel electrode 191B and the end of the pixel electrode 191G. The pixel electrode 191B and the pixel electrode 191G include a material that reflects visible light and infrared light, and the common electrode 115 includes a material that transmits visible light and infrared light.

[0227] The light emitting device 190 emits light toward the substrate 152. The substrate 152 is preferably made of a material having high transmittance to visible light and infrared light.

[0228] The pixel electrode 191B and the pixel electrode 191G can be formed using the same material and the same process. The common layer 112, the common layer 114 and the common electrode 115 are used for both the light emitting device 190B and the light emitting device 190G. The light emitting device 190B and the light emitting device 190G can share at least a part of the structure other than the light emitting layer. Thus, the light emitting device 200A can be provided with the function of emitting infrared light without significantly increasing the manufacturing process.

[0229] The light emitting device 190 is covered with a protective layer 195. By providing the protective layer 195, it is possible to suppress the intrusion of impurities such as water into the light emitting device 190, thereby improving the reliability of the light emitting device 190.

[0230] In the region 228 near the end of the light emitting device 200A, the insulating layer 215 and the protective layer 195 are preferably in contact with each other through the opening of the insulating layer 214. In particular, it is particularly preferred that the inorganic insulating film included in the insulating layer 215 and the inorganic insulating film included in the protective layer 195 are in contact with each other. Thus, it is possible to suppress the intrusion of impurities from the outside through the organic insulating film into the light emitting portion 163. Therefore, the reliability of the light emitting device 200A can be improved.

[0231] Fig. 10B An example in which the protective layer 195 has a three-layer structure is shown. Fig. 10B In the embodiment, the protective layer 195 includes an inorganic insulating layer 195a on the common electrode 115, an organic insulating layer 195b on the inorganic insulating layer 195a, and an inorganic insulating layer 195c on the organic insulating layer 195b.

[0232] The end of the inorganic insulating layer 195a and the end of the inorganic insulating layer 195c extend to the outside of the end of the organic insulating layer 195b, and they are in contact with each other. In addition, the inorganic insulating layer 195a is in contact with the insulating layer 215 (inorganic insulating layer) through the opening of the insulating layer 214 (organic insulating layer). Thus, the light emitting device 190 can be surrounded by the insulating layer 215 and the protective layer 195, and the reliability of the light emitting device 190 can be improved.

[0233] As described above, the protective layer 195 may have a stacked-layer structure of an organic insulating film and an inorganic insulating film. In this case, the end of the inorganic insulating film preferably extends to the outside of the end of the organic insulating film.

[0234] A light shielding layer BM is provided on the surface of the substrate 152 on the substrate 151 side. The light shielding layer BM has an opening at a position overlapping with the light emitting device 190.

[0235] The transistor 201, the transistor 206, and the transistor 207 are all provided over the substrate 151. These transistors can be formed using the same material and the same process.

[0236] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are sequentially provided on the substrate 151. A portion of the insulating layer 211 is used as a gate insulating layer of each transistor. A portion of the insulating layer 213 is used as a gate insulating layer of each transistor. The insulating layer 215 is provided in a manner covering the transistor. The insulating layer 214 is provided in a manner covering the transistor and is used as a planarization layer. In addition, there is no particular limitation on the number of gate insulating layers and the number of insulating layers covering the transistor, and it can be one or more than two.

[0237] Preferably, a material in which impurities such as water or hydrogen are not easily diffused is used for at least one of the insulating layers covering the transistor. Thus, the insulating layer can be used as a barrier layer. By adopting this structure, it is possible to effectively suppress the diffusion of impurities from the outside into the transistor, thereby improving the reliability of the light-emitting device.

[0238] Inorganic insulating films are preferably used as the insulating layer 211, the insulating layer 213, and the insulating layer 215. As the inorganic insulating film, for example, an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film can be used. In addition, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film can also be used. In addition, two or more of the above insulating films can also be stacked.

[0239] Here, the barrier property of the organic insulating film is lower than that of the inorganic insulating film in many cases. Therefore, the organic insulating film preferably includes an opening near the end of the light-emitting device 200A. Thus, it is possible to suppress the intrusion of impurities from the end of the light-emitting device 200A through the organic insulating film. In addition, the organic insulating film may be formed in such a way that its end is located inside the end of the light-emitting device 200A so that the organic insulating film is not exposed to the end of the light-emitting device 200A.

[0240] An organic insulating film is preferably used as the insulating layer 214 used as a planarizing layer. Examples of materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenolic resin, and precursors of these resins.

[0241] exist Fig. 10A In the illustrated region 228, an opening is formed in the insulating layer 214. Thus, even when an organic insulating film is used as the insulating layer 214, impurities can be prevented from entering the light emitting portion 163 from the outside through the insulating layer 214. Thus, the reliability of the light emitting device 200A can be improved.

[0242] The transistor 201, the transistor 206, and the transistor 207 include: a conductive layer 221 used as a gate; an insulating layer 211 used as a gate insulating layer; a conductive layer 222a and a conductive layer 222b used as a source and a drain; a semiconductor layer 231; an insulating layer 213 used as a gate insulating layer; and a conductive layer 223 used as a gate. Here, the same hatching is attached to a plurality of layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0243] There is no particular limitation on the transistor structure included in the light-emitting device of this embodiment. For example, a planar transistor, a staggered transistor, or an inversely staggered transistor may be used. In addition, the transistor may have a top gate structure or a bottom gate structure. Alternatively, a gate may be provided above and below the semiconductor layer forming the channel.

[0244] As the transistor 201, the transistor 206, and the transistor 207, a structure in which a semiconductor layer forming a channel is sandwiched between two gates is adopted. Alternatively, the two gates may be connected and the transistor may be driven by supplying the same signal to the two gates. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and applying a potential for driving to the other.

[0245] There is no particular restriction on the crystallinity of the semiconductor material used for the transistor, and an amorphous semiconductor or a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part thereof) can be used. When a crystalline semiconductor is used, it is preferred because it can suppress the degradation of the characteristics of the transistor.

[0246] The semiconductor layer of the transistor preferably uses a metal oxide (oxide semiconductor). In addition, the semiconductor layer of the transistor may also contain silicon. Examples of silicon include amorphous silicon, crystalline silicon (low-temperature polysilicon, single crystal silicon, etc.), and the like.

[0247] For example, the semiconductor layer preferably contains indium, M (M is selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten or magnesium) and zinc. In particular, M is preferably selected from one or more of aluminum, gallium, yttrium or tin.

[0248] In particular, as the semiconductor layer, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO).

[0249] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the sputtering target used to form the In-M-Zn oxide is preferably greater than the atomic ratio of M. Examples of the atomic ratio of the metal elements in such a sputtering target include In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=2:1:3, In:M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1, In:M:Zn=5:1:6, In:M:Zn=5:1:7, In:M:Zn=5:1:8, In:M:Zn=6:1:6, In:M:Zn=5:2:5, and the like.

[0250] In addition, it is preferred to use a target containing polycrystalline oxide as a sputtering target, thereby making it easy to form a crystalline semiconductor layer. Note that the atomic ratio of the formed semiconductor layer is within the range of ±40% of the atomic ratio of the metal element in the above-mentioned sputtering target. For example, when the composition of the sputtering target used for the semiconductor layer is In:Ga:Zn=4:2:4.1 [atomic ratio], the composition of the formed semiconductor layer is sometimes In:Ga:Zn=4:2:3 [atomic ratio] or its vicinity.

[0251] When the atomic ratio is described as In:Ga:Zn=4:2:3 or in the vicinity thereof, the following cases are included: when the atomic ratio of In is 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. In addition, when the atomic ratio is described as In:Ga:Zn=5:1:6 or in the vicinity thereof, the following cases are included: when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. In addition, when the atomic ratio is described as In:Ga:Zn=1:1:1 or in the vicinity thereof, the following cases are included: when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0252] The transistor included in the circuit 164 and the transistor included in the light emitting unit 163 may have the same structure or different structures. The multiple transistors included in the circuit 164 may have the same structure or two or more different structures. Similarly, the multiple transistors included in the light emitting unit 163 may have the same structure or two or more different structures.

[0253] A connection portion 204 is provided in a region where the substrate 151 and the substrate 152 do not overlap. In the connection portion 204, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connection layer 242. The conductive layer 166 obtained by processing the same conductive film as the pixel electrode 191B and the pixel electrode 191G is exposed on the top surface of the connection portion 204. Therefore, the connection portion 204 can be electrically connected to the FPC 172 via the connection layer 242.

[0254] In addition, various optical components may be arranged on the outside of the substrate 152. As optical components, a polarizing plate, a phase difference plate, a light diffusion layer (diffusion film, etc.), an anti-reflection layer, and a condensing film may be used. In addition, an antistatic film for suppressing the adhesion of dust, a water-repellent film that is not easily soiled, a hard coating film for suppressing damage during use, an impact absorption layer, etc. may also be arranged on the outside of the substrate 152.

[0255] Glass, quartz, ceramics, sapphire, resin, or the like can be used for the substrate 151 and the substrate 152. By using a flexible material for the substrate 151 and the substrate 152, the flexibility of the light-emitting device can be improved.

[0256] As the adhesive layer, various curing adhesives such as light curing adhesives such as ultraviolet curing adhesives, reaction curing adhesives, heat curing adhesives, anaerobic adhesives, etc. can be used. As these adhesives, epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene-vinyl acetate) resins, etc. can be cited. In particular, it is preferred to use materials with low moisture permeability such as epoxy resins. In addition, two-liquid mixed resins can also be used. In addition, adhesive sheets, etc. can also be used.

[0257] As the connection layer 242 , an anisotropic conductive film (ACF: Anisotropic Conductive Film), anisotropic conductive paste (ACP: Anisotropic Conductive Paste), or the like can be used.

[0258] The light emitting device 190 has a top emission structure, a bottom emission structure, or a double-sided emission structure. A conductive film that transmits visible light and infrared light is used as an electrode on the light extraction side. In addition, a conductive film that reflects visible light and infrared light is preferably used as an electrode on the non-light extraction side.

[0259] The light-emitting device 190B emits infrared light (IR) and blue (B) light. The light-emitting device 190B includes at least a light-emitting layer 193B and a light-emitting layer 193N. The light-emitting device 190G emits green (G) light. The light-emitting device 190G includes at least a light-emitting layer 193G. As a layer other than the light-emitting layer 193, the light-emitting device 190 may also include a layer containing a substance with high hole injection property, a substance with high hole transport property, a hole blocking material, a substance with high electron transport property, a substance with high electron injection property, or a bipolar substance. For example, the common layer 112 preferably includes one or both of a hole injection layer and a hole transport layer. For example, the common layer 114 preferably includes one or both of an electron transport layer and an electron injection layer.

[0260] The common layer 112, the light-emitting layer 193, and the common layer 114 may be formed using low molecular weight compounds or high molecular weight compounds, and may also contain inorganic compounds. The layers constituting the common layer 112, the light-emitting layer 193, and the common layer 114 may be formed by a method such as evaporation (including vacuum evaporation), transfer, printing, inkjet, or coating.

[0261] The light-emitting layer 193 may contain inorganic compounds such as quantum dots as light-emitting materials.

[0262] As materials that can be used for the gate, source and drain of the transistor and various wirings and electrodes constituting the light-emitting device, there can be cited metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum or tungsten, or alloys containing the above metals as main components, etc. A single layer or a stack of films containing these materials can be used.

[0263] In addition, as a conductive material with light transmittance, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphene can be used. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium or titanium, and alloy materials containing the metal materials can be used. Alternatively, nitrides of the metal materials (for example, titanium nitride) can also be used. In addition, when using metal materials or alloy materials (or their nitrides), it is preferably formed thin enough to be light transmittance. In addition, a laminated film of the above materials can be used as a conductive layer. For example, by using a laminated film of an alloy of silver and magnesium and indium tin oxide, the conductivity can be improved, so it is preferred. The above materials can also be used for conductive layers of various wirings and electrodes constituting the light-emitting device, and conductive layers included in the light-emitting device (conductive layers used as pixel electrodes and common electrodes).

[0264] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resins and epoxy resins, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0265] [Light-emitting device 200B] Fig.11A A cross-sectional view of a light emitting device 200B is shown.

[0266] The light emitting device 200B is different from the light emitting device 200A in the structure of the transistor.

[0267] The light emitting device 200B includes a transistor 202 , a transistor 208 , and a transistor 210 .

[0268] The transistor 202, the transistor 208, and the transistor 210 include: a conductive layer 221 serving as a gate; an insulating layer 211 serving as a gate insulating layer; a semiconductor layer including a channel formation region 231i and a pair of low resistance regions 231n; a conductive layer 222a connected to one of the pair of low resistance regions 231n; a conductive layer 222b connected to the other of the pair of low resistance regions 231n; an insulating layer 225 serving as a gate insulating layer; a conductive layer 223 serving as a gate; and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located between the conductive layer 223 and the channel formation region 231i.

[0269] The conductive layer 222a and the conductive layer 222b are connected to the low resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0270] The pixel electrode 191B of the light emitting device 190B is electrically connected to one of the pair of low resistance regions 231n of the transistor 210 through the conductive layer 222b.

[0271] The pixel electrode 191G of the light emitting device 190G is electrically connected to one of the pair of low resistance regions 231n of the transistor 208 through the conductive layer 222b.

[0272] Fig.11A 2 shows an example in which the insulating layer 225 covers the top surface and the side surfaces of the semiconductor layer. Fig. 11B In the embodiment, the insulating layer 225 overlaps with the channel forming region 231i of the semiconductor layer 231 but does not overlap with the low resistance region 231n. For example, by processing the insulating layer 225 using the conductive layer 223 as a mask, a Fig. 11B The structure shown. Fig. 11B In the embodiment, the insulating layer 215 covers the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are connected to the low resistance region 231n through the opening of the insulating layer 215. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0273] Furthermore, the light emitting device 200B is different from the light emitting device 200A in that it includes the substrate 153 , the substrate 154 , the adhesive layer 155 , and the insulating layer 212 instead of the substrate 151 and the substrate 152 .

[0274] The substrate 153 and the insulating layer 212 are bonded together by the adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by the adhesive layer 142.

[0275] The light emitting device 200B is formed by transferring the insulating layer 212, the transistor 202, the transistor 208, the transistor 210, the light emitting device 190, etc. formed on the manufacturing substrate onto the substrate 153. The substrate 153 and the substrate 154 are preferably flexible. Thus, the flexibility of the light emitting device 200B can be improved.

[0276] As the insulating layer 212 , an inorganic insulating film that can be used for the insulating layer 211 , the insulating layer 213 , and the insulating layer 215 can be used.

[0277] In addition, in the display device 200B, the protective layer 195 and the substrate 154 are attached by the adhesive layer 142. The adhesive layer 142 overlaps with the light emitting device 190. Fig.11A The light emitting device adopts a solid sealed structure.

[0278] [Metal oxides] Hereinafter, metal oxides that can be used for the semiconductor layer will be described.

[0279] In this specification, etc., metal oxides containing nitrogen are sometimes also referred to as metal oxides. In addition, metal oxides containing nitrogen may also be referred to as metal oxynitrides. For example, metal oxides containing nitrogen such as zinc oxynitride (ZnON) may be used for semiconductor layers.

[0280] In this specification, etc., it may be described as CAAC (c-axis aligned crystal) or CAC (Cloud-Aligned Composite). CAAC is an example of a crystal structure, and CAC is an example of a function or a material composition.

[0281] For example, as the semiconductor layer, CAC (Cloud-Aligned Composite)-OS (Oxide Semiconductor) can be used.

[0282] CAC-OS or CAC-metal oxide has a conductive function in a part of the material, an insulating function in another part of the material, and a semiconductor function as the entire part of the material. In addition, when CAC-OS or CAC-metal oxide is used in the semiconductor layer of a transistor, the conductive function is to allow electrons (or holes) used as carriers to flow through, and the insulating function is to prevent electrons used as carriers from flowing through. Through the complementary effects of the conductive function and the insulating function, CAC-OS or CAC-metal oxide can have a switching function (on / off function). By separating each function in CAC-OS or CAC-metal oxide, each function can be maximized.

[0283] In addition, CAC-OS or CAC-metal oxide includes a conductive region and an insulating region. The conductive region has the function of the above-mentioned conductivity, and the insulating region has the function of the above-mentioned insulation. In addition, in the material, the conductive region and the insulating region are sometimes separated at a nanoparticle level. In addition, the conductive region and the insulating region are sometimes unevenly distributed in the material. In addition, sometimes the conductive region whose edge is fuzzy and connected in a cloud shape is observed.

[0284] In CAC-OS or CAC-metal oxide, the conductive region and the insulating region may be dispersed in the material with a size of 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm.

[0285] In addition, CAC-OS or CAC-metal oxide is composed of components with different band gaps. For example, CAC-OS or CAC-metal oxide is composed of a component with a wide gap caused by an insulating region and a component with a narrow gap caused by a conductive region. In this structure, when carriers are allowed to flow through, the carriers mainly flow through the component with the narrow gap. In addition, the component with the narrow gap interacts with the component with the narrow gap through the complementary effect with the component with the wide gap, so that the carriers flow through the component with the wide gap. Therefore, when the above-mentioned CAC-OS or CAC-metal oxide is used in the channel formation region of a transistor, a high current driving force, that is, a large on-state current and a high field effect mobility can be obtained in the on-state of the transistor.

[0286] That is, CAC-OS or CAC-metal oxide may also be referred to as a matrix composite material (matrix composite) or a metal matrix composite material (metal matrix composite).

[0287] Oxide semiconductors (metal oxides) are classified into single crystal oxide semiconductors and non-single crystal oxide semiconductors. Examples of non-single crystal oxide semiconductors include CAAC-OS (c-axis aligned crystalline oxide semiconductor), polycrystalline oxide semiconductors, nc-OS (nanocrystalline oxide semiconductor), a-like OS (amorphous-like oxide semiconductor), and amorphous oxide semiconductors.

[0288] CAAC-OS has c-axis orientation, and its multiple nanocrystals are connected in the ab plane direction and the crystal structure has distortion. Note that distortion refers to the part where the lattice arrangement direction changes between the region where the multiple nanocrystals are connected and the region where the lattice arrangement is consistent.

[0289] Although nanocrystals are basically hexagonal, they are not limited to regular hexagons, and there are cases where they are not regular hexagons. In addition, in the distortion, there is sometimes a lattice arrangement such as a pentagon or a heptagon. In addition, in CAAC-OS, it is difficult to observe a clear grain boundary even near the distortion. That is, it can be seen that the formation of grain boundaries can be suppressed due to the distortion of the lattice arrangement. This is because CAAC-OS can accommodate distortion due to the low density of oxygen atoms arranged in the ab plane direction or the change in the bonding distance between atoms caused by the substitution of metal elements.

[0290] CAAC-OS tends to have a layered crystal structure (also referred to as a layered structure) in which a layer containing indium and oxygen (hereinafter referred to as an In layer) and a layer containing element M, zinc, and oxygen (hereinafter referred to as an (M, Zn) layer) are stacked. In addition, indium and element M can replace each other, and when indium replaces element M in the (M, Zn) layer, the layer can also be represented as an (In, M, Zn) layer. In addition, when indium in the In layer is replaced by element M, the layer can also be represented as an (In, M) layer.

[0291] CAAC-OS is a metal oxide with high crystallinity. On the other hand, it is not easy to observe clear grain boundaries in CAAC-OS, so it is not easy to cause a decrease in electron mobility due to grain boundaries. In addition, the crystallinity of metal oxides is sometimes reduced due to the entry of impurities or the generation of defects, so it can be said that CAAC-OS is a metal oxide with high crystallinity (oxygen vacancies (also called V O Therefore, the physical properties of the metal oxide including CAAC-OS are stable. Therefore, the metal oxide including CAAC-OS has high heat resistance and high reliability.

[0292] In nc-OS, the atomic arrangement in a tiny region (e.g., a region between 1 nm and 10 nm, especially a region between 1 nm and 3 nm) is periodic. In addition, in nc-OS, no regularity of crystal orientation is observed between different nanocrystals. Therefore, no orientation is observed in the entire film. Therefore, sometimes nc-OS is no different from a-like OS or amorphous oxide semiconductors in some analysis methods.

[0293] In addition, indium-gallium-zinc oxide (hereinafter, IGZO), which is a kind of metal oxide containing indium, gallium and zinc, sometimes has a stable structure when it is composed of the above-mentioned nanocrystal. In particular, IGZO has a tendency that crystal growth is not easy in the atmosphere, so sometimes IGZO is structurally stable when it is formed of small crystals (for example, the above-mentioned nanocrystals) compared to when IGZO is formed of large crystals (here, crystals of several mm or several cm).

[0294] a-like OS is a metal oxide having a structure between nc-OS and amorphous oxide semiconductor. a-like OS contains voids or low-density regions. In other words, the crystallinity of a-like OS is lower than that of nc-OS and CAAC-OS.

[0295] Oxide semiconductors (metal oxides) have various structures and various characteristics. The oxide semiconductor of one embodiment of the present invention may include two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, a-like OS, nc-OS, and CAAC-OS.

[0296] The metal oxide film used as the semiconductor layer can be formed using either or both of an inert gas and an oxygen gas. Note that there is no particular restriction on the oxygen flow rate ratio (oxygen partial pressure) when the metal oxide film is formed. However, in the case of obtaining a transistor with high field effect mobility, the oxygen flow rate ratio (oxygen partial pressure) when the metal oxide film is formed is preferably 0% or more and 30% or less, more preferably 5% or more and 30% or less, and further preferably 7% or more and 15% or less.

[0297] The energy gap of the metal oxide is preferably 2 eV or more, more preferably 2.5 eV or more, and further preferably 3 eV or more. Thus, by using a metal oxide with a wide energy gap, the off-state current of the transistor can be reduced.

[0298] The substrate temperature during the formation of the metal oxide film is preferably 350° C. or lower, more preferably room temperature to 200° C. or lower, and further preferably room temperature to 130° C. The substrate temperature during the formation of the metal oxide film is preferably room temperature, thereby improving productivity.

[0299] The metal oxide film can be formed by a sputtering method, and other methods, such as a PLD method, a PECVD method, a thermal CVD method, an ALD method, and a vacuum evaporation method, can be used.

[0300] Thus, the light-emitting device of this embodiment includes a light-emitting device that emits visible light and infrared light and a light-emitting device that emits visible light. The light-emitting device of this embodiment can emit both visible light and infrared light, and thus can be used as a light source for any one of a sensor in which visible light is used as a light source, a sensor in which infrared light is used as a light source, and a sensor in which both visible light and infrared light are used as a light source, and its convenience is high.

[0301] In addition, in the light-emitting device of this embodiment, a structure in which one sub-pixel emits both visible light and infrared light can be adopted. Therefore, a light-emitting device that emits both visible light and infrared light can be realized without increasing the number of sub-pixels included in one pixel. In addition, the light-emitting device that emits visible light and infrared light and the light-emitting device that emits visible light can have a layer of a common structure. Therefore, the function of emitting infrared light can be added to the light-emitting device without significantly changing the pixel layout of the light-emitting device and significantly increasing the manufacturing process.

[0302] This embodiment mode can be appropriately combined with other embodiment modes. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be appropriately combined.

[0303] (Implementation Method 2) In this embodiment, refer to FIG. 12A to FIG. 19 A display device according to one embodiment of the present invention will be described.

[0304] A display device according to one embodiment of the present invention includes, in a display portion, a light-emitting device that emits visible light and infrared light, a light-emitting device that emits visible light, and a light-receiving device that detects at least a portion of the visible light and infrared light. Visible light may include light having a wavelength of 400 nm or more and less than 750 nm, for example, red, green, or blue light. Infrared light may include near-infrared light, specifically, light having a wavelength of 750 nm or more and less than 1300 nm.

[0305] A display device according to one embodiment of the present invention includes a first light-emitting device, a second light-emitting device and a light-receiving device in a display portion. The first light-emitting device has the function of emitting both visible light and infrared light. The second light-emitting device has the function of emitting visible light. The light-receiving device has the function of absorbing at least a portion of visible light and infrared light. The first light-emitting device includes a first pixel electrode, a first light-emitting layer, a second light-emitting layer and a common electrode. The first light-emitting layer and the second light-emitting layer are each located between the first pixel electrode and the common electrode. The second light-emitting device includes a second pixel electrode, a third light-emitting layer and a common electrode. The third light-emitting layer is located between the second pixel electrode and the common electrode. The light-receiving device includes a third pixel electrode, an active layer and a common electrode. The active layer is located between the third pixel electrode and the common electrode. The first light-emitting layer contains a light-emitting material that emits infrared light. The second light-emitting layer and the third light-emitting layer each contain a light-emitting material that emits visible light of different wavelengths. The active layer contains an organic compound.

[0306] A display device according to one embodiment of the present invention can display an image using visible light emitted by a light-emitting device. Specifically, in a display portion, the light-emitting devices are arranged in a matrix, and an image can be displayed in the display portion.

[0307] In addition, in a display device of one embodiment of the present invention, the light-emitting device can be used as a light source for a sensor (e.g., an image sensor, an optical touch sensor). A display device of one embodiment of the present invention can emit both visible light and infrared light, and thus can be combined with a sensor in which visible light is used as a light source and a sensor in which infrared light is used as a light source, which is convenient. In addition, a display device of one embodiment of the present invention can be used as a light source for a sensor in which both visible light and infrared light are used as a light source, and the functionality of the sensor can be improved.

[0308] In addition, in a display device of one embodiment of the present invention, a structure in which one sub-pixel emits both visible light and infrared light can be adopted. For example, a structure in which any one of the three sub-pixels emitting red, green or blue emits infrared light can be adopted. When the sub-pixel emitting visible light also serves as the sub-pixel emitting infrared light, there is no need to separately provide a sub-pixel emitting infrared light. Therefore, a display device that emits both visible light and infrared light can be realized without increasing the number of sub-pixels included in one pixel. As a result, the decrease in the aperture ratio of the pixel can be suppressed, and the light extraction efficiency of the display device can be improved.

[0309] In addition, in the display unit, the light receiving device is arranged in a matrix shape, so that the display unit also has the function of a light receiving unit. The light receiving device can detect one or both of visible light and infrared light. The light receiving unit can be used for an image sensor or a touch sensor. In other words, by detecting light by the light receiving unit, an image can be captured or the approach or contact of an object (a finger or a pen, etc.) can be detected.

[0310] The display device of one embodiment of the present invention can be used as a sensor by emitting light of a wavelength detected by a light receiving device from a light emitting device. Therefore, it is not necessary to provide a light receiving unit and a light source outside the display device, and the number of components of the electronic device can be reduced.

[0311] In the display device of one embodiment of the present invention, when light emitted by a light-emitting device included in the display unit is reflected by an object, the light-receiving device can detect the reflected light, thereby capturing an image or detecting a touch (or approach) even in a dark place.

[0312] In addition, in a display device of one embodiment of the present invention, the three devices, namely, a light-emitting device that emits visible light and infrared light, a light-emitting device that emits visible light, and a light-receiving device, may have a layer of a common structure. Therefore, the display device can be provided with an additional function of emitting infrared light and a light-receiving device without significantly increasing the manufacturing process. For example, in the above three devices, at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may have the same structure.

[0313] Note that sometimes the function of a layer used in common by a light-receiving device and a light-emitting device is different in the light-emitting device and the light-receiving device. In this specification, the constituent elements are referred to according to the function of the light-emitting device. For example, the hole injection layer has the functions of a hole injection layer and a hole transport layer in the light-emitting device and the light-receiving device, respectively. Similarly, the electron injection layer has the functions of an electron injection layer and an electron transport layer in the light-emitting device and the light-receiving device, respectively. In addition, the hole transport layer has the function of a hole transport layer in both the light-emitting device and the light-receiving device. Similarly, the electron transport layer has the function of an electron transport layer in both the light-emitting device and the light-receiving device.

[0314] The display device of one embodiment of the present invention can use the light-emitting device described in Embodiment 1. For the structure and features of the light-emitting device included in the display device of this embodiment, Embodiment 1 can be referred to, and thus detailed description may be omitted.

[0315] When a light receiving device is used for an image sensor, the display device of this embodiment can capture an image using the light receiving device.

[0316] For example, an image sensor can be used to obtain data of fingerprints, palm prints, or irises. That is, a biometric sensor can be provided in the display device of this embodiment. By providing a biometric sensor in the display device, the number of components of the electronic device can be reduced compared to the case where the display device and the biometric sensor are provided separately, thereby achieving miniaturization and lightness of the electronic device.

[0317] In addition, image sensors can be used to obtain data such as changes in the user's expression, sight, or pupil diameter. By analyzing this data, information about the user's body and mind can be obtained. By changing the output content of one or both of the video and audio according to this information, users can safely use devices such as virtual reality (VR) devices, augmented reality (AR) devices, and mixed reality (MR) devices.

[0318] Furthermore, when a light receiving device is used for a touch sensor, the display device of this embodiment can detect the approach or contact of an object using the light receiving device.

[0319] As the light receiving device, for example, a pn type or pin type photodiode can be used. The light receiving device is used as a photoelectric conversion device that detects light incident on the light receiving device to generate electric charge. The amount of electric charge generated depends on the amount of incident light.

[0320] In particular, an organic photodiode having a layer containing an organic compound is preferably used as a light-receiving device. Organic photodiodes are easy to achieve thinning, weight reduction, and large area, and have a high degree of freedom in shape and design, so they can be applied to various display devices.

[0321] In one embodiment of the present invention, an organic EL device is used as a light-emitting device, and an organic photodiode is used as a light-receiving device. There are many layers in the organic photodiode that can be formed in the same structure as the organic EL device. Therefore, the light-receiving device can be provided in the display device without significantly increasing the manufacturing process. For example, the active layer of the light-receiving device and the light-emitting layer of the light-emitting device can be formed separately, while the other layers are used by the light-receiving device and the light-emitting device together.

[0322] FIG. 12A to FIG. 12D A cross-sectional view showing a display device according to one embodiment of the present invention.

[0323] Fig. 12A The display device 50A shown includes a layer 53 having a light receiving device and a layer 57 having a light emitting device between a substrate 151 and a substrate 152 .

[0324] Fig. 12B The display device 50B shown includes a layer 53 having a light receiving device, a layer 55 having a transistor, and a layer 57 having a light emitting device between a substrate 151 and a substrate 152 .

[0325] The display device 50A and the display device 50B emit red (R) light, green (G) light, blue (B) light, and infrared light (IR) from the layer 57 having the light emitting device.

[0326] The structure of the layer 57 having the light-emitting device can refer to the structure of the light-emitting device of Embodiment Mode 1. That is, the light-emitting device included in the light-emitting device of Embodiment Mode 1 can be used for the layer 57 having the light-emitting device.

[0327] The layer 55 having transistors preferably has a first transistor and a second transistor. The first transistor is electrically connected to the light receiving device. The second transistor is electrically connected to the light emitting device.

[0328] The layer 53 having the light-receiving device may have a structure for detecting visible light, a structure for detecting infrared light, or a structure for detecting both visible light and infrared light. The wavelength of light detected by the light-receiving device may be determined according to the application of the sensor.

[0329] The display device of one embodiment of the present invention may also have a function of detecting an object such as a finger that touches the display device. Fig. 12C As shown, light emitted by the light emitting device in the layer 57 having light emitting devices is reflected by the finger 52 touching the display device 50B, so that the light receiving device in the layer 53 having light receiving devices detects the reflected light. Thus, the finger 52 touching the display device 50B can be detected.

[0330] like Fig.12DAs shown, the display device according to one embodiment of the present invention may have a function of detecting or capturing an object approaching (not in contact with) the display device 50B.

[0331] [Pixels] FIG. 13A to FIG. 13E An example of a pixel is shown.

[0332] A display device of one embodiment of the present invention has a plurality of pixels arranged in a matrix. One pixel has more than one sub-pixel. One sub-pixel has one light-emitting device. For example, a pixel may have a structure having three sub-pixels (three colors of R, G, and B or three colors of yellow (Y), cyan (C), and magenta (M), etc.) or a structure having four sub-pixels (four colors of R, G, B, and white (W) or four colors of R, G, B, and Y, etc.).

[0333] In the display device according to one embodiment of the present invention, at least one of the sub-pixels constituting a pixel emits visible light and infrared light.

[0334] Furthermore, the pixel has a light receiving device. The light receiving device may be provided in all pixels or in a part of the pixels. In addition, one pixel may also have a plurality of light receiving devices.

[0335] FIG. 13A to FIG. 13D The pixel shown includes three sub-pixels (three light-emitting devices) of R, G, and B and a light-receiving device PD. Fig.13A , Fig.13D In the example, the red (R) sub-pixel emits infrared light (IR). Fig. 13B In the example, the green (G) sub-pixel emits infrared light (IR). Fig. 13C In the example, the blue (B) sub-pixel emits infrared light (IR).

[0336] FIG. 13A to FIG. 13C This is an example where three sub-pixels and light-receiving devices PD are arranged in a 2×2 matrix. Fig.13D This is an example in which three sub-pixels and the light-receiving device PD are arranged in one horizontal row.

[0337] Fig.13E The pixel shown includes four sub-pixels (four light-emitting devices) of R, G, B, and W and a light-receiving device PD.

[0338] Fig.13D , Fig.13E The structure in which the red (R) sub-pixel emits infrared light (IR) is shown, but the present invention is not limited thereto and the structure in which the sub-pixels of other colors emit infrared light may also be used.

[0339] The following reference FIG. 14A to FIG. 19The structure of a display device according to one embodiment of the present invention is described. Hereinafter, the light emitting device emitting G and B light among the light emitting devices of three colors, R, G, and B, is mainly described. The light emitting device emitting R light may have the same structure as the light emitting device emitting G light.

[0340] [Display device 10A] Fig.14A A cross-sectional view of the display device 10A is shown.

[0341] The display device 10A includes a light receiving device 110, a light emitting device 190B, and a light emitting device 190G. The light receiving device 110 has a function of detecting infrared light 21N. The light emitting device 190B has a function of emitting blue light 21B and infrared light 21N. The light emitting device 190G has a function of emitting green light 21G.

[0342] In addition, the light receiving device 110 has not only the function of detecting infrared light, but also the function of detecting visible light. In addition, the light emitting device that emits infrared light 21N is not limited to the light emitting device 190B. At least one of the light emitting devices that emit visible light (e.g., red, green, blue, etc.) may have the function of emitting infrared light 21N.

[0343] The light emitting device 190B includes a pixel electrode 191, a buffer layer 192B, a light emitting layer 193B, a light emitting layer 193N, a buffer layer 194B, and a common electrode 115. Fig.14A Although the light emitting layer 193B and the light emitting layer 193N are shown as one layer, the light emitting layer 193B and the light emitting layer 193N are different layers. Since the light emitting device 190B has a top emission structure, as described in Embodiment 1, it is preferable to include the light emitting layer 193N between the pixel electrode 191 and the light emitting layer 193B.

[0344] The light emitting device 190G includes a pixel electrode 191 , a buffer layer 192G, a light emitting layer 193G, a buffer layer 194G, and a common electrode 115 .

[0345] The light receiving device 110 includes a pixel electrode 181 , a buffer layer 182 , an active layer 183 , a buffer layer 184 and a common electrode 115 .

[0346] The pixel electrode 181, buffer layer 182, buffer layer 192B, buffer layer 192G, active layer 183, light-emitting layer 193B, light-emitting layer 193N, light-emitting layer 193G, buffer layer 184, buffer layer 194B, buffer layer 194G and common electrode 115 can have either a single-layer structure or a stacked-layer structure.

[0347] The pixel electrode 181 and the pixel electrode 191 are located on the insulating layer 214. The pixel electrode 181 and the pixel electrode 191 can be formed using the same material and the same process.

[0348] In the display device 10A, not only the active layer 183 included in the light receiving device 110 and the light emitting layer 193 included in the light emitting device 190 are formed separately, but also other layers (buffer layers) are formed separately. Specifically, the light receiving device 110, the light emitting device 190B, and the light emitting device 190G have no common layer between a pair of electrodes (the pixel electrode 181 or the pixel electrode 191 and the common electrode 115).

[0349] As the light receiving device 110 and the light emitting device 190, the pixel electrodes 181 and 191 are formed on the insulating layer 214 using the same material and the same process, the buffer layer 182, the active layer 183 and the buffer layer 184 are formed on the pixel electrode 181, and the buffer layer 192, the light emitting layer 193 and the buffer layer 194 are formed on the pixel electrode 191, and then the common electrode 115 is formed in a manner covering the pixel electrodes 181, the pixel electrode 191, the buffer layer 182, the buffer layer 192, the active layer 183, the light emitting layer 193, the buffer layer 184 and the buffer layer 194. There is no particular limitation on the order of forming the stacked structure of the buffer layer 182, the active layer 183 and the buffer layer 184, and the stacked structure of the buffer layer 192, the light emitting layer 193 and the buffer layer 194. For example, the buffer layer 192, the light emitting layer 193 and the buffer layer 194 may be formed after the buffer layer 182, the active layer 183 and the buffer layer 184 are formed. On the contrary, the buffer layer 192, the light-emitting layer 193, and the buffer layer 194 may be formed before the buffer layer 182, the active layer 183, and the buffer layer 184. Alternatively, the buffer layer 182, the buffer layer 192B, the buffer layer 192G, the active layer 183, the light-emitting layer 193N, etc. may be formed alternately in the order of.

[0350] As the buffer layer 182, for example, a hole transport layer may be formed. As the buffer layer 192B and the buffer layer 192G, for example, one or both of a hole injection layer and a hole transport layer may be formed.

[0351] The active layer 183 overlaps the pixel electrode 181 via the buffer layer 182. The active layer 183 overlaps the common electrode 115 via the buffer layer 184. The active layer 183 includes an organic compound. Specifically, the active layer 183 includes an organic compound different from the organic compound included in the light emitting layer 193 of the light emitting device 190.

[0352] The light-emitting layer 193B and the light-emitting layer 193N overlap the pixel electrode 191 via the buffer layer 192B. The light-emitting layer 193B and the light-emitting layer 193N overlap the common electrode 115 via the buffer layer 194B. The light-emitting layer 193B includes a light-emitting material that emits blue light. The light-emitting layer 193N includes a light-emitting material that emits infrared light.

[0353] The light emitting layer 193G overlaps with the pixel electrode 191 via the buffer layer 192G. The light emitting layer 193G overlaps with the common electrode 115 via the buffer layer 194G. The light emitting layer 193G includes a light emitting material that emits green light.

[0354] As the buffer layer 184, for example, an electron transport layer may be formed. As the buffer layer 194B and the buffer layer 194G, for example, one or both of an electron injection layer and an electron transport layer may be formed.

[0355] The common electrode 115 has a portion overlapping the pixel electrode 181 via the buffer layer 182, the active layer 183, and the buffer layer 184. In addition, the common electrode 115 has a portion overlapping the pixel electrode 181 via the buffer layer 192B, the light-emitting layer 193B, the light-emitting layer 193N, and the buffer layer 194B. In addition, the common electrode 115 has a portion overlapping the pixel electrode 191 via the buffer layer 192G, the light-emitting layer 193G, and the buffer layer 194G. The light-receiving device 110, the light-emitting device 190B, and the light-emitting device 190G share the common electrode 115.

[0356] In the display device of this embodiment, an organic compound is used for the active layer 183 of the light receiving device 110. The light receiving device 110 can be manufactured by changing at least a part of the structure between a pair of electrodes of the light emitting device 190 (EL device). Therefore, the light receiving device 110 can be provided in the display portion of the display device.

[0357] The display device 10A includes a light receiving device 110 , a light emitting device 190B, a light emitting device 190G, a transistor 41 , a transistor 42 , and the like between a pair of substrates (a substrate 151 and a substrate 152 ).

[0358] In the light receiving device 110, the buffer layer 182, the active layer 183, and the buffer layer 184 located between the pixel electrode 181 and the common electrode 115 can each be called an organic layer (a layer containing an organic compound). The pixel electrode 181 preferably has a function of reflecting visible light and infrared light. The end of the pixel electrode 181 is covered by the partition wall 216. The common electrode 115 has a function of transmitting visible light and infrared light.

[0359] The light receiving device 110 has a function of detecting light. Specifically, the light receiving device 110 is a photoelectric conversion device that receives light 22 incident from the outside of the display device 10A and converts it into an electrical signal. The light 22 can also be said to be light emitted by the light emitting device 190 and reflected by an object. In addition, the light 22 can also be incident on the light receiving device 110 through a lens described later.

[0360] The surface of the substrate 152 on the substrate 151 side is preferably provided with a light shielding layer BM. The light shielding layer BM has openings at a position overlapping with the light receiving device 110 and a position overlapping with the light emitting device 190. By providing the light shielding layer BM, the range in which the light receiving device 110 detects light can be controlled.

[0361] Here, the light receiving device 110 detects the light from the light emitting device 190 reflected by the object. However, sometimes the light from the light emitting device 190 is reflected in the display device 10A and enters the light receiving device 110 without passing through the object. The light shielding layer BM can reduce the negative impact of such stray light. For example, in the absence of the light shielding layer BM, sometimes the light 23a emitted by the light emitting device 190 is reflected by the substrate 152, and the reflected light 23b is incident on the light receiving device 110. By providing the light shielding layer BM, the reflected light 23b can be suppressed from being incident on the light receiving device 110. As a result, the noise can be reduced to improve the sensitivity of the sensor using the light receiving device 110.

[0362] In the light emitting device 190, the buffer layer 192, the light emitting layer 193, and the buffer layer 194, respectively located between the pixel electrode 191 and the common electrode 115, may be referred to as an EL layer. The pixel electrode 191 preferably has a function of reflecting visible light and infrared light. The end of the pixel electrode 191 is covered by the partition wall 216. The pixel electrode 181 and the pixel electrode 191 are electrically insulated from each other via the partition wall 216. The common electrode 115 has a function of transmitting visible light and infrared light.

[0363] The light emitting device 190B has the function of emitting both visible light and infrared light. Specifically, the light emitting device 190B is an electroluminescent device that emits visible light (blue light 21B) and infrared light (infrared light 21N) toward the substrate 152 when voltage is applied between the pixel electrode 191 and the common electrode 115 .

[0364] The light emitting device 190G has a function of emitting visible light. Specifically, the light emitting device 190G is an electroluminescent device that emits visible light (green light 21G) toward the substrate 152 side when a voltage is applied between the pixel electrode 191 and the common electrode 115 .

[0365] The light emitting layer 193 is preferably formed so as not to overlap with the light receiving region of the light receiving device 110. This can suppress the light emitting layer 193 from absorbing the light 22, and the amount of light irradiated to the light receiving device 110 can be increased.

[0366] The pixel electrode 181 is electrically connected to the source or drain of the transistor 41 through an opening provided in the insulating layer 214. An end portion of the pixel electrode 181 is covered by a partition wall 216.

[0367] The pixel electrode 191 is electrically connected to the source or drain of the transistor 42 through an opening provided in the insulating layer 214. An end portion of the pixel electrode 191 is covered by a partition wall 216. The transistor 42 has a function of controlling driving of the light emitting device 190.

[0368] The transistor 41 and the transistor 42 are in contact with each other on the same layer ( Fig.14A On the substrate 151).

[0369] At least a portion of the circuit electrically connected to the light receiving device 110 is preferably formed using the same material and process as the circuit electrically connected to the light emitting device 190. This can reduce the thickness of the display device and simplify the manufacturing process compared to forming two circuits separately.

[0370] The light receiving device 110 and the light emitting device 190 are preferably each covered with a protective layer 195. Fig.14A In the embodiment, the protective layer 195 is disposed on and in contact with the common electrode 115. By providing the protective layer 195, it is possible to suppress the intrusion of impurities such as water into the light receiving device 110 and the light emitting device 190, thereby improving the reliability of the light receiving device 110 and the light emitting device 190. In addition, the protective layer 195 and the substrate 152 can be bonded using the adhesive layer 142.

[0371] In addition, if Fig. 14B As shown, the protective layer may not be included on the light receiving device 110 and the light emitting device 190. Fig. 14B In the embodiment, the common electrode 115 and the substrate 152 are attached using the adhesive layer 142 .

[0372] [Display device 10B] Fig. 14B FIG. 2 is a cross-sectional view of a display device 10B. In the description of a display device to be described later, description of the same structure as that of a display device described previously may be omitted.

[0373] The display device 10B is different from the display device 10A in that the common layer 112 is included but the buffer layer 182 , the buffer layer 192B, and the buffer layer 192G are not included.

[0374] The common layer 112 is located on the pixel electrode 181 and the pixel electrode 191. The light receiving device 110, the light emitting device 190B, and the light emitting device 190G use the common layer 112 in common.

[0375] As the common layer 112, for example, one or both of a hole injection layer and a hole transport layer may be formed. The common layer 112 may be a single-layer structure or a stacked-layer structure.

[0376] By using at least a part of the layers other than the active layer and the light-emitting layer in common for the light-receiving device and the light-emitting device, it is possible to reduce the number of manufacturing steps of the display device, which is preferred.

[0377] [Display device 10C] Fig. 14C A cross-sectional view of a display device 10C is shown.

[0378] The display device 10C is different from the display device 10A in that the common layer 114 is included but the buffer layer 184 , the buffer layer 194B, and the buffer layer 194G are not included.

[0379] The common layer 114 is located on the partition wall 216, the active layer 183, the light emitting layer 193B, the light emitting layer 193N, and the light emitting layer 193G. The light receiving device 110, the light emitting device 190B, and the light emitting device 190G use the common layer 114 in common.

[0380] As the common layer 114, for example, one or both of an electron injection layer and an electron transport layer may be formed. The common layer 114 may have a single layer structure or a stacked layer structure.

[0381] By using at least a part of the layers other than the active layer and the light-emitting layer in common for the light-receiving device and the light-emitting device, it is possible to reduce the number of manufacturing steps of the display device, which is preferred.

[0382] [Display device 10D] Fig.15A A cross-sectional view of a display device 10D is shown.

[0383] The display device 10D is different from the display device 10A in that it includes the common layer 112 and the common layer 114 but does not include the buffer layers 182 , 192B, 192G, 184 , 194B, and 194G.

[0384] In the display device of this embodiment, an organic compound is used for the active layer 183 of the light receiving device 110. The layers other than the active layer 183 of the light receiving device 110 can adopt the same structure as the light emitting device 190 (EL device). Therefore, as long as the process of forming the active layer 183 is added to the manufacturing process of the light emitting device 190, the light receiving device 110 can be formed at the same time as the light emitting device 190. In addition, the light emitting device 190 and the light receiving device 110 can be formed on the same substrate. Therefore, the light receiving device 110 can be provided in the display device without significantly increasing the manufacturing process.

[0385] In the display device 10D, only the active layer 183 of the light receiving device 110 and the light emitting layer 193 of the light emitting device 190 are formed separately, and the other layers can be used in common by the light receiving device 110 and the light emitting device 190. However, the structures of the light receiving device 110 and the light emitting device 190 are not limited to this. In addition to the active layer 183 and the light emitting layer 193, the light receiving device 110 and the light emitting device 190 may also have other separately formed layers (refer to the aforementioned display device 10A, display device 10B and display device 10C). The light receiving device 110 and the light emitting device 190 preferably use one or more layers (common layers) in common. As a result, the light receiving device 110 can be provided in the display device without significantly increasing the manufacturing process.

[0386] [Display device 10E] Fig. 15B A cross-sectional view of a display device 10E is shown.

[0387] Fig. 15B The display device 10E shown includes a lens 149 in addition to the structure of the display device 10A.

[0388] The display device of this embodiment may also include a lens 149. The lens 149 is provided at a position overlapping with the light receiving device 110. In the display device 10E, the lens 149 is provided in contact with the substrate 152. The lens 149 included in the display device 10E has a convex surface on the substrate 151 side. Alternatively, the lens 149 may also have a convex surface on the substrate 152 side.

[0389] When both the light shielding layer BM and the lens 149 are formed on the same surface of the substrate 152, there is no limitation on the order in which they are formed. Fig. 15B 149 is formed first, but the light shielding layer BM may also be formed first. Fig. 15B In the embodiment, the end of the lens 149 is covered by the light shielding layer BM.

[0390] The display device 10E adopts a structure in which the light 22 is incident on the light receiving device 110 through the lens 149. Compared with the case where the lens 149 is not provided, by providing the lens 149, the shooting range of the light receiving device 110 can be reduced, thereby suppressing the overlap of the shooting range with the adjacent light receiving device 110. As a result, a clear image with less blur can be captured. In addition, when the shooting range of the light receiving device 110 is equal, by providing the lens 149, the size of the pinhole can be increased (in Fig. 15B (corresponding to the opening size of the light shielding layer BM overlapping with the light receiving device 110). Thus, by providing the lens 149, the amount of light incident on the light receiving device 110 can be increased.

[0391] In addition, a lens 149 having a convex surface on the substrate 152 side may be provided on the top surface of the protective layer 195 so that they are in contact with each other. In addition, a lens array may be provided on the display surface side (the side opposite to the surface on the substrate 151 side) of the substrate 152. The lenses of the lens array are provided at a position overlapping with the light receiving device 110. It is preferred that a light shielding layer BM is provided on the surface of the substrate 152 on the substrate 151 side.

[0392] As a method for forming a lens used in the display device of this embodiment, a lens such as a microlens may be directly formed on a substrate or a light receiving device, or a lens array such as a microlens array formed separately may be bonded to a substrate.

[0393] [Display device 10F] Fig. 15C A cross-sectional view of a display device 10F is shown.

[0394] Fig. 15C The display device 10F shown is different from the display device 10D in that the display device 10F includes the substrate 153 , the substrate 154 , the adhesive layer 155 , the insulating layer 212 , and the partition wall 217 , but does not include the substrate 151 , the substrate 152 , and the partition wall 216 .

[0395] The substrate 153 and the insulating layer 212 are bonded together by the adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by the adhesive layer 142.

[0396] The display device 10F is formed by transferring the insulating layer 212, the transistor 41, the transistor 42, the light receiving device 110, the light emitting device 190, etc. formed on the manufacturing substrate onto the substrate 153. The substrate 153 and the substrate 154 are preferably flexible. Thus, the flexibility of the display device 10F can be improved. For example, the substrate 153 and the substrate 154 are preferably made of resin. In addition, the substrate of the display device of this embodiment can use a film with high optical isotropy.

[0397] The partition wall 217 preferably absorbs light emitted by the light emitting device. As the partition wall 217, for example, a black matrix can be formed using a resin material containing a pigment or a dye. In addition, by using a brown resist material, the partition wall 217 can be formed of a colored insulating layer.

[0398] The light emitted by the light emitting device 190 is sometimes reflected by the substrate 152 and the partition wall 217, so that the reflected light is incident on the light receiving device 110. In addition, the light emitted by the light emitting device 190 is sometimes reflected by the transistor or wiring through the partition wall 217, so that the reflected light is incident on the light receiving device 110. By absorbing the light by the partition wall 217, the above-mentioned reflected light can be suppressed from being incident on the light receiving device 110. As a result, the noise can be reduced to improve the sensitivity of the sensor using the light receiving device 110.

[0399] The partition wall 217 preferably absorbs at least the wavelength of light detected by the light receiving device 110. For example, when the light receiving device 110 detects the green light 21G emitted by the light emitting device 190G, the partition wall 217 preferably absorbs at least the green light. For example, when the partition wall 217 has a red color filter, the green light can be absorbed, thereby suppressing the reflected light from being incident on the light receiving device 110.

[0400] In addition, a coloring layer that absorbs light may be provided in contact with one or both of the top surface and the side surface of the partition wall 216 that transmits light. The coloring layer preferably absorbs light emitted by the light-emitting device. As the coloring layer, for example, a black matrix may be formed using a resin material containing a pigment or a dye. In addition, by using a brown resist material, the coloring layer may be formed by a colored insulating layer.

[0401] The coloring layer preferably absorbs at least the wavelength of light detected by the light receiving device 110. For example, when the light receiving device 110 detects the green light 21G emitted by the light emitting device 190G, the coloring layer preferably absorbs at least the green light. For example, when the coloring layer has a red color filter, the green light can be absorbed, thereby suppressing the reflected light from entering the light receiving device 110.

[0402] The colored layer absorbs stray light generated in the display device 10F, thereby reducing the amount of stray light incident on the light receiving device 110. This reduces noise and improves the sensitivity of the sensor using the light receiving device 110.

[0403] In the display device of this embodiment, the colored layer is disposed between the light receiving device 110 and the light emitting device 190. Thus, stray light incident on the light receiving device 110 from the light emitting device 190 can be suppressed.

[0404] The following reference Figures 16 to 19 A more detailed structure of a display device according to one embodiment of the present invention will be described.

[0405] [Display device 100A] Fig.16 The display device 100A is a cross-sectional view showing the display device 100A. The display device 100A includes a display portion 162 instead of Fig. 9 The structure of the light emitting unit 163 of the light emitting device 200A shown in FIG. Fig.16 The structure shown can also be said to be a display module including the display device 100A, IC, and FPC.

[0406] Fig.16 An example of a cross section of a portion of a region including the FPC 172 , a portion of a region including the circuit 164 , a portion of a region including the display portion 162 , and a portion of a region including an end portion of the display device 100A is shown.

[0407] Fig.16 The display device 100A shown includes a transistor 201 , a transistor 205 , a transistor 206 , a transistor 207 , a light-emitting device 190B, a light-emitting device 190G, a light-receiving device 110 , and the like between a substrate 151 and a substrate 152 .

[0408] The substrate 152 and the insulating layer 214 are bonded together by the adhesive layer 142. As a seal for the light emitting device 190B, the light emitting device 190G and the light receiving device 110, a solid sealing structure or a hollow sealing structure may be adopted. Fig.16 In the embodiment, the space 143 surrounded by the substrate 152, the adhesive layer 142 and the insulating layer 214 is filled with an inert gas (nitrogen, argon, etc.), and a hollow sealed structure is adopted. The adhesive layer 142 may also overlap with the light emitting device 190B, the light emitting device 190G, and the light receiving device 110. In addition, the space 143 surrounded by the substrate 152, the adhesive layer 142 and the insulating layer 214 may also be filled with a resin different from the adhesive layer 142.

[0409] The light emitting device 190B has a stacked structure in which a pixel electrode 191B, a common layer 112, a light emitting layer 193N, a light emitting layer 193B, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191B is connected to the conductive layer 222b included in the transistor 206 through an opening formed in the insulating layer 214. The transistor 206 has a function of controlling the driving of the light emitting device 190B.

[0410] The light emitting device 190G has a stacked structure in which a pixel electrode 191G, a common layer 112, a light emitting layer 193G, a common layer 114, and a common electrode 115 are stacked in sequence from one side of the insulating layer 214. The pixel electrode 191G is connected to the conductive layer 222b included in the transistor 207 through an opening formed in the insulating layer 214. The transistor 207 has a function of controlling the driving of the light emitting device 190G.

[0411] The partition wall 216 covers the end of the pixel electrode 191B and the end of the pixel electrode 191G. The pixel electrode 191B and the pixel electrode 191G include a material that reflects visible light and infrared light, and the common electrode 115 includes a material that transmits visible light and infrared light.

[0412] The light receiving device 110 has a stacked structure in which a pixel electrode 181, a common layer 112, an active layer 183, a common layer 114, and a common electrode 115 are stacked in sequence from one side of the insulating layer 214. The pixel electrode 181 is electrically connected to the conductive layer 222b included in the transistor 205 through an opening formed in the insulating layer 214. The partition wall 216 covers the end of the pixel electrode 181. The pixel electrode 181 includes a material that reflects visible light and infrared light, and the common electrode 115 includes a material that allows visible light and infrared light to pass through.

[0413] The light emitting device 190 emits light to the substrate 152 side. In addition, the light passes through the substrate 152 and the space 143 and enters the light receiving device 110. The substrate 152 is preferably made of a material having high transmittance to visible light and infrared light.

[0414] The pixel electrode 181 and the pixel electrode 191 can be formed using the same material and the same process. The common layer 112, the common layer 114 and the common electrode 115 are used for both the light receiving device 110 and the light emitting device 190. In addition to the active layer 183 and the light emitting layer 193, the light receiving device 110 and the light emitting device 190 can use other layers in common. Thus, the light receiving device 110 can be provided in the display device 100A without significantly increasing the manufacturing process.

[0415] A light shielding layer BM is provided on the surface of the substrate 152 on the substrate 151 side. The light shielding layer BM has openings at a position overlapping with the light receiving device 110 and a position overlapping with the light emitting device 190. By providing the light shielding layer BM, the range of light detection by the light receiving device 110 can be controlled. In addition, by providing the light shielding layer BM, it is possible to suppress light from the light emitting device 190 from directly entering the light receiving device 110 without passing through an object. Thus, a sensor with less noise and high sensitivity can be realized.

[0416] The transistor 201, the transistor 205, the transistor 206, and the transistor 207 are all provided over the substrate 151. These transistors can be formed using the same material and the same process.

[0417] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are sequentially provided on the substrate 151. A portion of the insulating layer 211 is used as a gate insulating layer of each transistor. A portion of the insulating layer 213 is used as a gate insulating layer of each transistor. The insulating layer 215 is provided in a manner covering the transistor. The insulating layer 214 is provided in a manner covering the transistor and is used as a planarization layer. In addition, there is no particular limitation on the number of gate insulating layers and the number of insulating layers covering the transistor, and it can be one or more than two.

[0418] Preferably, a material in which impurities such as water or hydrogen are not easily diffused is used for at least one of the insulating layers covering the transistor. Thus, the insulating layer can be used as a barrier layer. By adopting this structure, it is possible to effectively suppress the diffusion of impurities from the outside into the transistor, thereby improving the reliability of the display device.

[0419] As the insulating layer 211 , the insulating layer 213 , and the insulating layer 215 , an inorganic insulating film is preferably used.

[0420] Here, the barrier property of the organic insulating film is lower than that of the inorganic insulating film in many cases. Therefore, the organic insulating film preferably includes an opening near the end of the display device 100A. Thus, it is possible to suppress the intrusion of impurities from the end of the display device 100A through the organic insulating film. In addition, the organic insulating film may be formed in such a way that its end is located inside the end of the display device 100A so that the organic insulating film is not exposed to the end of the display device 100A.

[0421] The insulating layer 214 used as a planarizing layer is preferably an organic insulating film. Fig.16 In the illustrated region 228, an opening is formed in the insulating layer 214. Thus, even when an organic insulating film is used as the insulating layer 214, impurities can be prevented from entering the display portion 162 from the outside through the insulating layer 214. Thus, the reliability of the display device 100A can be improved.

[0422] The structure of the transistor included in the display device 100A is similar to that of the light-emitting device 200A ( Fig. 10A ) has the same structure as the transistors included therein, so detailed description is omitted.

[0423] There is no particular limitation on the structure of a transistor included in the display device of this embodiment. For example, the transistor that can be used for a light-emitting device described in Embodiment 1 can be used for the display device of this embodiment.

[0424] A connection portion 204 is provided in a region where the substrate 151 and the substrate 152 do not overlap. In the connection portion 204, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connection layer 242. The conductive layer 166 obtained by processing the same conductive film as the pixel electrode 191 is exposed on the top surface of the connection portion 204. Therefore, the connection portion 204 and the FPC 172 can be electrically connected via the connection layer 242.

[0425] In addition, various optical components may be arranged on the outside of the substrate 152. As optical components, a polarizing plate, a phase difference plate, a light diffusion layer (diffusion film, etc.), an anti-reflection layer, and a condensing film may be used. In addition, an antistatic film for suppressing the adhesion of dust, a water-repellent film that is not easily soiled, a hard coating film for suppressing damage during use, an impact absorption layer, etc. may also be arranged on the outside of the substrate 152.

[0426] As materials that can be used for each component of the display device, the materials that can be used for each component of the light-emitting device described in Embodiment 1 can be used.

[0427] The light emitting device 190 has a top emission structure, a bottom emission structure, or a double-sided emission structure. A conductive film that transmits visible light and infrared light is used as an electrode on the light extraction side. In addition, a conductive film that reflects visible light and infrared light is preferably used as an electrode on the non-light extraction side.

[0428] The light-emitting device 190B emits infrared light (IR) and blue (B) light. The light-emitting device 190B includes at least a light-emitting layer 193B and a light-emitting layer 193N. The light-emitting device 190G emits green (G) light. The light-emitting device 190G includes at least a light-emitting layer 193G. As a layer other than the light-emitting layer 193, the light-emitting device 190 may also include a layer containing a substance with high hole injection property, a substance with high hole transport property, a hole blocking material, a substance with high electron transport property, a substance with high electron injection property, or a bipolar substance. For example, the common layer 112 preferably has one or both of a hole injection layer and a hole transport layer. For example, the common layer 114 preferably has one or both of an electron transport layer and an electron injection layer.

[0429] The common layer 112, the light-emitting layer 193, and the common layer 114 may be formed using low molecular weight compounds or high molecular weight compounds, and may also contain inorganic compounds. The layers constituting the common layer 112, the light-emitting layer 193, and the common layer 114 may be formed by a method such as evaporation (including vacuum evaporation), transfer, printing, inkjet, or coating.

[0430] The light-emitting layer 193 may contain inorganic compounds such as quantum dots as light-emitting materials.

[0431] The active layer 183 of the light receiving device 110 includes a semiconductor. As the semiconductor, inorganic semiconductors such as silicon and organic semiconductors including organic compounds can be cited. In this embodiment, an example of using an organic semiconductor as a semiconductor contained in the active layer is shown. By using an organic semiconductor, the light emitting layer 193 of the light emitting device 190 and the active layer 183 of the light receiving device 110 can be formed by the same method (for example, vacuum evaporation method), and the manufacturing equipment can be used in common, so it is preferred.

[0432] Examples of the material of the n-type semiconductor contained in the active layer 183 include fullerene (e.g., C 60 , C 70 In addition, as the material of the p-type semiconductor contained in the active layer 183, organic semiconductor materials with electron donating properties such as copper (II) phthalocyanine (Copper (II) phthalocyanine: CuPc) or tetraphenyldibenzoperiflanthene (Tetraphenyldibenzoperiflanthene: DBP) can be cited.

[0433] For example, it is preferable to form the active layer 183 by co-evaporating an n-type semiconductor and a p-type semiconductor.

[0434] [Display device 100B] Fig.17A A cross-sectional view of the display device 100B is shown.

[0435] The display device 100B differs from the display device 100A mainly in that it includes a lens 149 and a protective layer 195 .

[0436] By providing the protection layer 195 covering the light receiving device 110 and the light emitting device 190 , it is possible to suppress the intrusion of impurities such as water into the light receiving device 110 and the light emitting device 190 , thereby improving the reliability of the light receiving device 110 and the light emitting device 190 .

[0437] In the region 228 near the end of the display device 100B, the insulating layer 215 and the protective layer 195 are preferably in contact with each other through the opening of the insulating layer 214. In particular, it is particularly preferable that the inorganic insulating film included in the insulating layer 215 and the inorganic insulating film included in the protective layer 195 are in contact with each other. Thus, it is possible to suppress the intrusion of impurities from the outside into the display portion 162 through the organic insulating film. Therefore, the reliability of the display device 100B can be improved.

[0438] Fig. 17B An example in which the protective layer 195 has a three-layer structure is shown. Fig. 17BIn the embodiment, the protective layer 195 includes an inorganic insulating layer 195a on the common electrode 115, an organic insulating layer 195b on the inorganic insulating layer 195a, and an inorganic insulating layer 195c on the organic insulating layer 195b.

[0439] The end of the inorganic insulating layer 195a and the end of the inorganic insulating layer 195c extend to the outside of the end of the organic insulating layer 195b, and they are in contact with each other. In addition, the inorganic insulating layer 195a is in contact with the insulating layer 215 (inorganic insulating layer) through the opening of the insulating layer 214 (organic insulating layer). Thus, the light receiving device 110 and the light emitting device 190 can be surrounded by the insulating layer 215 and the protective layer 195, and the reliability of the light receiving device 110 and the light emitting device 190 can be improved.

[0440] As described above, the protective layer 195 may have a stacked-layer structure of an organic insulating film and an inorganic insulating film. In this case, the end of the inorganic insulating film preferably extends to the outside of the end of the organic insulating film.

[0441] A lens 149 is provided on the surface of the substrate 152 on the substrate 151 side. The lens 149 has a convex surface on the substrate 151 side. The light receiving region of the light receiving device 110 preferably overlaps with the lens 149 and does not overlap with the light emitting layer 193. Thus, the sensitivity and accuracy of the sensor using the light receiving device 110 can be improved.

[0442] The refractive index of the lens 149 is preferably 1.3 or more and 2.5 or less. The lens 149 may be formed using at least one of an inorganic material and an organic material. For example, the lens 149 may use a material containing a resin. In addition, a material containing at least one of an oxide and a sulfide may be used for the lens 149.

[0443] Specifically, a resin containing chlorine, bromine, or iodine, a resin containing heavy metal atoms, a resin containing an aromatic ring, a resin containing sulfur, or the like can be used for the lens 149. Alternatively, a resin or a material having nanoparticles having a higher refractive index than that of the resin can be used for the lens 149. As the nanoparticles, titanium oxide, zirconium oxide, or the like can be used.

[0444] Furthermore, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, an oxide containing indium and tin, or an oxide containing indium, gallium, and zinc, or the like can be used for the lens 149. Alternatively, zinc sulfide or the like can be used for the lens 149.

[0445] In addition, in the display device 100B, the protective layer 195 and the substrate 152 are attached to each other via the adhesive layer 142. The adhesive layer 142 overlaps with the light receiving device 110 and the light emitting device 190, and the display device 100B adopts a solid sealing structure.

[0446] [Display device 100C] Fig.18A A cross-sectional view of the display device 100C is shown.

[0447] The display device 100C is different from the display device 100B in the structure of transistors.

[0448] The display device 100C includes a transistor 202 , a transistor 209 , and a transistor 210 on a substrate 151 .

[0449] The structure of the transistor included in the display device 100C is similar to that of the light-emitting device 200B ( Fig.11A ) has the same structure as the transistors included therein, so detailed description is omitted.

[0450] Fig.18A 2 shows an example in which the insulating layer 225 covers the top surface and the side surfaces of the semiconductor layer. Fig.18B In the embodiment, the insulating layer 225 overlaps with the channel forming region 231i of the semiconductor layer 231 but does not overlap with the low resistance region 231n. For example, by processing the insulating layer 225 using the conductive layer 223 as a mask, a Fig.18B The structure shown. Fig.18B In the embodiment, the insulating layer 215 covers the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are connected to the low resistance region 231n through the opening of the insulating layer 215. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0451] [Display device 100D] Fig.19 A cross-sectional view of the display device 100D is shown.

[0452] The display device 100D is different from the display device 100C in that a coloring layer 148 a is included.

[0453] The coloring layer 148 a has a portion in contact with the top surface of the pixel electrode 181 included in the light receiving device 110 and a portion in contact with the side surface of the partition wall 216 .

[0454] By absorbing stray light generated in the display device 100D by the colored layer 148a, the amount of stray light incident on the light receiving device 110 can be reduced. As a result, noise can be reduced and the sensitivity of the sensor using the light receiving device 110 can be improved.

[0455] In addition, the display device 100D is different from the display device 100C in that the display device 100D includes the substrate 153 , the substrate 154 , the adhesive layer 155 , and the insulating layer 212 instead of the substrate 151 and the substrate 152 .

[0456] The substrate 153 and the insulating layer 212 are bonded together by the adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by the adhesive layer 142.

[0457] The display device 100D is formed by transferring the insulating layer 212, the transistor 202, the transistor 209, the transistor 210, the light receiving device 110, the light emitting device 190, etc. formed on the manufacturing substrate onto the substrate 153. The substrate 153 and the substrate 154 are preferably flexible. Thus, the flexibility of the display device 100D can be improved.

[0458] As the insulating layer 212 , an inorganic insulating film that can be used for the insulating layer 211 , the insulating layer 213 , and the insulating layer 215 can be used.

[0459] In addition, an example in which the display device 100C does not have the lens 149 is shown, and an example in which the display device 100D has the lens 149 is shown. The lens 149 may be provided as appropriate depending on the purpose of the sensor and the like.

[0460] Thus, the display device of this embodiment includes a light-emitting device that emits visible light and infrared light, a light-emitting device that emits visible light, and a light-receiving device that detects at least a portion of the visible light and infrared light in the display portion. The display portion has both the function of displaying an image and the function of detecting light. Thus, compared with the case where the sensor is arranged outside the display portion or outside the display device, the miniaturization and light weight of the electronic device can be achieved. In addition, it is also possible to combine with a sensor arranged outside the display portion or outside the display device to realize an electronic device with more functions.

[0461] At least one layer other than the active layer of the light receiving device may be the same as the light emitting device (EL device). In addition, all layers other than the active layer of the light receiving device may also be the same as the light emitting device (EL device). For example, as long as the process of forming the active layer is added to the manufacturing process of the light emitting device, the light emitting device and the light receiving device can be formed on the same substrate. In addition, the light receiving device and the light emitting device can form pixel electrodes and common electrodes using the same material and the same process. In addition, by using the same material and the same process to manufacture a circuit electrically connected to the light receiving device and a circuit electrically connected to the light emitting device, the manufacturing process of the display device can be simplified. As a result, a highly convenient display device with a built-in light receiving device can be manufactured without complicated processes.

[0462] This embodiment mode can be combined with other embodiment modes as appropriate.

[0463] (Implementation method 3) In this embodiment, materials that can be used for a light-emitting device which is one embodiment of the present invention are described.

[0464] <Electrode> As a material for forming a pair of electrodes of a light-emitting device, metals, alloys, conductive compounds, and mixtures thereof can be appropriately used. Specifically, In-Sn oxide (also referred to as ITO), In-Si-Sn oxide (also referred to as ITSO), In-Zn oxide, and In-W-Zn oxide can be cited. In addition to the above, aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd) and other metals and alloys appropriately combined therewith can also be cited. In addition to the above, elements belonging to Group 1 or Group 2 of the periodic table (for example, lithium (Li), cesium (Cs), calcium (Ca), strontium (Sr)), rare earth metals such as europium (Eu), ytterbium (Yb), alloys appropriately combined therefrom, and graphene, etc. can be used.

[0465] When manufacturing a light-emitting device having a microcavity structure, a reflective electrode and a semi-transmissive / semi-reflective electrode are used. Thus, the electrodes can be formed using a desired conductive material alone or using a plurality of conductive materials in a single layer or a stacked layer. In addition, the electrodes can be formed using a sputtering method or a vacuum evaporation method.

[0466] <Hole Injection Layer and Hole Transport Layer> The hole injection layer is a layer for injecting holes from the anode into the light-emitting unit, and contains a material with high hole injection properties.

[0467] As materials with high hole injection properties, for example, transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide, phthalocyanine (abbreviation: H2Pc), copper phthalocyanine (abbreviation: CuPc) and other phthalocyanine compounds can be used.

[0468] As a material with high hole injection property, aromatic amine compounds such as 4,4',4"-tris(N,N-diphenylamino)triphenylamine (abbreviated as TDATA), 4,4',4"-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviated as MTDATA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviated as DPAB), 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviated as DPAB) can be used. : DNTPD), 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), 3-[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazole-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1), etc.

[0469] As materials with high hole injection properties, poly(N-vinylcarbazole) (abbreviated as PVK), poly(4-vinyltriphenylamine) (abbreviated as PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviated as PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviated as Poly-TPD), etc. can be used. Alternatively, a polymer compound to which an acid is added, such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (abbreviated as PEDOT / PSS) or polyaniline / poly(styrenesulfonic acid) (PAni / PSS), etc. can also be used.

[0470] As a material with high hole injection property, a composite material comprising a hole transport material and an acceptor material (electron acceptor material) can also be used. In this case, the acceptor material extracts electrons from the hole transport material to generate holes in the hole injection layer, and the holes are injected into the light-emitting layer through the hole transport layer. In addition, the hole injection layer can be a single layer composed of a composite material comprising a hole transport material and an acceptor material, or a stack of layers formed using hole transport materials and acceptor materials respectively.

[0471] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. The hole transport layer is a layer containing a hole transport material. As the hole transport material used for the hole transport layer, it is particularly preferred to use a material having a HOMO level that is the same as or close to the HOMO level of the hole injection layer.

[0472] As an acceptor material for the hole injection layer, an oxide of a metal belonging to Group 4 to Group 8 in the periodic table can be used. Specifically, molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide can be cited. Molybdenum oxide is particularly preferably used because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle. In addition to the above, organic acceptors such as quinone dimethane derivatives, tetrachlorobenzoquinone derivatives, and hexaazatriphenylene derivatives can be cited. Examples of the above-mentioned compound having an electron-withdrawing group (halogen or cyano) include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), and 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ). In particular, compounds such as HAT-CN in which a fused aromatic ring having a plurality of heteroatoms is bonded to an electron-withdrawing group are thermally stable and therefore are preferred. In addition, [3]radialene derivatives containing electron-withdrawing groups (especially halogen groups such as fluorine groups and cyano groups) are particularly preferred because they have very high electron accepting properties. Specifically, α, α', α"-1,2,3-cyclopropane trimylidene tris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α, α', α"-1,2,3-cyclopropane trimylidene tris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], α, α', α"-1,2,3-cyclopropane trimylidene tris[2,3,4,5,6-pentafluorobenzeneacetonitrile], and the like can be mentioned.

[0473] As the hole transport material used for the hole injection layer and the hole transport layer, it is preferred that the hole transport material has 10 -6 cm 2 In addition, any substance other than the above may be used as long as the hole transport property is higher than the electron transport property.

[0474] The hole transport material is preferably a material having a high hole transport property, such as a π-electron-rich heteroaromatic compound (for example, a carbazole derivative, a thiophene derivative, and a furan derivative), an aromatic amine (a compound having an aromatic amine skeleton), or the like.

[0475] Examples of the carbazole derivative (a compound having a carbazole skeleton) include bicarbazole derivatives (for example, 3,3′-bicarbazole derivatives) and aromatic amines having a carbazole group.

[0476] Specific examples of bicarbazole derivatives (e.g., 3,3'-bicarbazole derivatives) include 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 9,9'-bis(1,1'-biphenyl-4-yl)-3,3'-bi-9H-carbazole, 9,9'-bis(1,1'-biphenyl-3-yl)-3,3'-bi-9H-carbazole, 9-(1,1'-biphenyl-3-yl)-9'-(1,1'-biphenyl-4-yl)-9H,9'H-3,3'-bicarbazole (abbreviation: mBPCCBP), and 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: βNCCP).

[0477] Specific examples of the aromatic amine having a carbazole group include 4-phenyl-4′-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBA1BP), N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluorene-2-yl)-9-phenyl-9H-carbazole-3-amine (abbreviation: PCBiF), N-(1,1′-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF), 4,4′-diphenyl-4″-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBBi1 BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCBANB), 4,4'-di(1-naphthyl)-4"-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCBNBB), 4-phenyldiphenyl-(9-phenyl-9H-carbazole-3-yl)amine (abbreviated as: PCA1BP), N,N'-bis(9-phenylcarbazole-3-yl)-N,N'-diphenylbenzene-1,3-diamine (abbreviated as: PCA2B), N,N',N"-triphenyl-N,N',N"-tri(9-phenylcarbazole-3-yl)benzene-1,3,5-triamine (abbreviated as: PCA 3B), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]fluoren-2-amine (abbreviated as: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]spiro-9,9'-difluoren-2-amine (abbreviated as: PCBASF), PCzPCA1, PCzPCA2, PCzPCN1, 3-[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviated as: PCzDPA1), 3,6-bis[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviated as: PCzDPA2), 3,6-Bis[N-(4-diphenylaminophenyl)-N-(1-naphthyl)amino]-9-phenylcarbazole (abbreviated as PCzTPN2), 2-[N-(9-phenylcarbazole-3-yl)-N-phenylamino]spiro-9,9'-difluorene (abbreviated as PCASF), N-[4-(9H-carbazole-9-yl)phenyl]-N-(4-phenyl)phenylaniline (abbreviated as YGA1BP), N,N'-bis[4-(carbazole-9-yl)phenyl]-N,N'-diphenyl-9,9-dimethylfluorene-2,7-diamine (abbreviated as YGA2F), 4,4',4"-tris(carbazole-9-yl)triphenylamine (abbreviated as TCTA), etc.

[0478] Examples of the carbazole derivatives include, in addition to the above, 3-[4-(9-phenanthrenyl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPPn), 3-[4-(1-naphthyl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), and 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA).

[0479] Specific examples of thiophene derivatives (compounds having a thiophene skeleton) and furan derivatives (compounds having a furan skeleton) include compounds having a thiophene skeleton such as 4,4',4"-(benzene-1,3,5-triyl)tris(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), and 4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), as well as 4,4',4"-(benzene-1,3,5-triyl)tris(dibenzofuran) (abbreviation: DBF3P-II), and 4-{3-[3-(9-phenyl-9H-fluorene-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II).

[0480] Specific examples of aromatic amines include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviated as NPB or α-NPD), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviated as TPD), 4,4'-bis[N-(spiro-9,9'-difluorene-2-yl)-N-phenylamino]biphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluorene-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluorene-9-yl)triphenylamine (abbreviation: mBPAFLP), N-(9,9-dimethyl-9H-fluorene-2-yl)-N-{9,9-dimethyl-2-[N'-phenyl-N'-(9,9-dimethyl-9H-fluorene-2-yl)- =The following are some of the following: N-(9,9-dimethyl-2-diphenylamino-9H-fluoren-7-yl)diphenylamine (abbreviation: DFLADFL), N-(9,9-dimethyl-2-diphenylamino-9H-fluoren-7-yl)diphenylamine (abbreviation: DPNF), 2-[N-(4-diphenylaminophenyl)-N-phenylamino]spiro-9,9'-bifluorene (abbreviation: DPASF), 2,7-bis[N-(4-diphenylaminophenyl)-N-phenylamino]spiro-9,9'-bifluorene (abbreviation: DPA2SF), 4,4',4"-tris[N-(1-naphthyl)-N-phenylamino]triphenylamine (abbreviation: 1-TNATA), TDATA, m-MTDATA, N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), DPAB, DNTPD, DPA3B, etc.

[0481] As the hole transport material, a polymer compound such as PVK, PVTPA, PTPDMA, or Poly-TPD can also be used.

[0482] The hole transporting material is not limited to the above materials, and one or more combinations of various known materials may be used for the hole injection layer and the hole transporting layer.

[0483] <Luminous Layer> The light-emitting layer is a layer containing a light-emitting substance. The light-emitting layer may contain one or more light-emitting substances. As the light-emitting substance, a substance that emits light in a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red is appropriately used. In addition, as the light-emitting substance, a substance that emits near-infrared light may also be used.

[0484] In addition, the light-emitting layer may include one or more organic compounds (host material, auxiliary material, etc.) in addition to the light-emitting substance (guest material). As the one or more organic compounds, one or both of the hole transport material and the electron transport material described in this embodiment can be used. In addition, as the one or more organic compounds, bipolar materials can also be used.

[0485] There is no particular limitation on the luminescent material that can be used for the luminescent layer, and a luminescent material that converts singlet excitation energy into light in the visible light region or near infrared light region or a luminescent material that converts triplet excitation energy into light in the visible light region or near infrared light region can be used.

[0486] As the luminescent substance that converts the singlet excitation energy into luminescence, there can be mentioned substances that emit fluorescence (fluorescent materials), for example, pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives, etc. In particular, pyrene derivatives are preferred because of their high luminescence quantum yield. Specific examples of pyrene derivatives include N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(dibenzofuran-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6FrAPrn), N,N'-bis(dibenzothiophene-2-yl)-N,N' -diphenylpyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-6-amine] (abbreviation: 1,6BnfAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-02), N,N'-(pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), etc.

[0487] In addition to the above, 5,6-bis[4-(10-phenyl-9-anthracenyl)phenyl]-2,2'-bipyridine (abbreviated as PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthracenyl)biphenyl-4-yl]-2,2'-bipyridine (abbreviated as PAPP2BPy), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylethylene-4,4'-diamine (abbreviated as PAP2BPy) and 4-(10-phenyl-9-anthracenyl)phenyl]-2,2'-bipyridine (abbreviated as PAPP2BPy) can be used. triphenylamine (abbreviated as: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole-3-amine (abbreviated as: PCAPA), 4-(9H-carbazole-9-yl)-4'-(10-phenyl-9-anthracenyl)triphenylamine (abbreviated as: YGA2S), 4-(9H-carbazole-9-yl)-4'-(10-phenyl-9-anthracenyl)triphenylamine (abbreviated as: YGAPA), 4-(9H-carbazole-9-yl)-4'-(9,10-diphenyl-2-anthracenyl)triphenylamine (abbreviated as: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole-3-amine (abbreviated as: PCAPA), 4-(10 -phenyl-9-anthracenyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCBAPA), 4-[4-(10-phenyl-9-anthracenyl)phenyl]-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCBAPBA), dinaphthylbenzene, 2,5,8,11-tetra(tert-butyl)dinaphthylbenzene (abbreviated as: TBP), N,N"-(2-tert-butylanthracene-9,10-diyldiphenylamine -4,1-phenylene)bis[N,N',N'-triphenyl-1,4-phenylenediamine] (abbreviated as: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthracenyl)phenyl]-9H-carbazole-3-amine (abbreviated as: 2PCAPPA), N-[4-(9,10-diphenyl-2-anthracenyl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviated as: 2DPAPPA), etc.

[0488] Examples of the light-emitting substance that converts triplet excitation energy into light emission include substances that emit phosphorescence (phosphorescent materials) and thermally activated delayed fluorescence (TADF) materials that exhibit thermally activated delayed fluorescence.

[0489] As phosphorescent materials, for example, there can be mentioned organic metal complexes (especially iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, a pyridine skeleton, organic metal complexes (especially iridium complexes) with phenylpyridine derivatives having electron-withdrawing groups as ligands, platinum complexes, rare earth metal complexes, and the like.

[0490] Examples of phosphorescent materials that exhibit blue or green color and have an emission spectrum with a peak wavelength of 450 nm to 570 nm include the following.

[0491] For example, tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN 2 ]phenyl-κC}iridium(III) (abbreviated as [Ir(mpptz-dmp)3]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazole)iridium(III) (abbreviated as [Ir(Mptz)3]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazole]iridium(III) (abbreviated as [Ir(iPrptz-3b)3]), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazole]iridium(III) (abbreviated as [Ir(iPr5btz)3]), etc. having a 4H-triazole skeleton; tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazole]iridium(III) (abbreviated as [Ir( [Ir(Mptz1-mp)3]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazole)iridium(III) (abbreviated as [Ir(Prptz1-Me)3]), etc. having an imidazole skeleton; fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviated as [Ir(iPrpmi)3]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviated as [Ir(dmpimpt-Me)3]), etc. having an imidazole skeleton; and bis[2-(4',6'-difluorophenyl)pyridinium-N,C 2 '] iridium (III) tetrakis (1-pyrazolyl) borate (abbreviated as FIr6), bis [2-(4', 6'-difluorophenyl) pyridinium-N, C 2 '] iridium (III) picolinate (abbreviated as FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinium-N,C 2 '}iridium(III) picolinate (abbreviated as [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinium-N,C 2 '] iridium (III) acetylacetonate (abbreviated as FIr(acac)) and other organic metal complexes with phenylpyridine derivatives having electron-withdrawing groups as ligands.

[0492] Examples of phosphorescent materials that exhibit green or yellow color and have an emission spectrum with a peak wavelength of 495 nm to 590 nm include the following.

[0493] For example, tris(4-methyl-6-phenylpyrimidinyl)iridium(III) (abbreviated as [Ir(mppm)3]), tris(4-tert-butyl-6-phenylpyrimidinyl)iridium(III) (abbreviated as [Ir(tBuppm)3]), (acetylacetonate)bis(6-methyl-4-phenylpyrimidinyl)iridium(III) (abbreviated as [Ir(mppm)2(acac)]), (acetylacetonate)bis(6-tert-butyl-4-phenylpyrimidinyl)iridium(III) (abbreviated as [Ir(tBuppm)3]), pm)2(acac)]), (acetylacetonate)bis[6-(2-norbornyl)-4-phenylpyrimidinyl]iridium(III) (abbreviated as [Ir(nbppm)2(acac)]), (acetylacetonate)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinyl]iridium(III) (abbreviated as [Ir(mpmppm)2(acac)]), (acetylacetonate)bis{4,6-dimethyl-2-[6-(2,6-dimethylphenyl)-4-pyrimidinyl-κN 3 ]phenyl-κC}iridium(III) (abbreviated as [Ir(dmppm-dmp)2(acac)]), (acetylacetonato)bis(4,6-diphenylpyrimidine)iridium(III) (abbreviated as [Ir(dppm)2(acac)]), etc. having a pyrimidine skeleton; (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazine)iridium(III) (abbreviated as [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazine)iridium(III) (abbreviated as [Ir(mppr-iPr)2(acac)]), etc. having a pyrazine skeleton; tris(2-phenylpyridinium-N,C 2 ') iridium (III) (abbreviated as [Ir(ppy)3]), bis(2-phenylpyridinium-N,C 2 ') iridium (III) acetylacetonate (abbreviated as [Ir(ppy)2(acac)]), bis(benzo[h]quinoline)iridium (III) acetylacetonate (abbreviated as [Ir(bzq)2(acac)]), tris(benzo[h]quinoline)iridium (III) (abbreviated as [Ir(bzq)3]), tris(2-phenylquinoline-N,C 2＇ )iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinoline-N,C 2') iridium (III) acetylacetonate (abbreviated as [Ir(pq)2(acac)]), [2-(4-phenyl-2-pyridyl-κN)phenyl-κC]bis[2-(2-pyridyl-κN)phenyl-κC]iridium (III) (abbreviated as [Ir(ppy)2(4dppy)]), bis[2-(2-pyridyl-κN)phenyl-κC][2-(4-methyl-5-phenyl-2-pyridyl-κN)phenyl-κC], etc., having a pyridine skeleton; bis(2,4-diphenyl-1,3-oxazol-N,C 2 ') iridium (III) acetylacetonate (abbreviated as [Ir(dpo)2(acac)]), bis{2-[4'-(perfluorophenyl)phenyl]pyridine-N,C 2 '}Iridium(III) acetylacetonate (abbreviated as [Ir(p-PF-ph)2(acac)]), bis(2-phenylbenzothiazole-N,C 2 ') organic metal complexes such as iridium (III) acetylacetonate (abbreviated as [Ir(bt)2(acac)]) and rare earth metal complexes such as tris(acetylacetonate)(monophenanthroline)terbium (III) (abbreviated as [Tb(acac)3(Phen)]).

[0494] Examples of phosphorescent materials that exhibit yellow or red color and have an emission spectrum with a peak wavelength of 570 nm to 750 nm include the following.

[0495] For example, (diisobutyrylmethane)bis[4,6-bis(3-methylphenyl)pyrimidinyl]iridium(III) (abbreviated as [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinyl](dipivaloylmethane)iridium(III) (abbreviated as [Ir(5mdppm)2(dpm)]), bis[4,6-di(naphthalene-1-yl)pyrimidinyl](dipivaloylmethane)iridium(III) (abbreviated as [Ir(d1npm)2(dpm)]), tri(4-tert-butyl-6-phenylpyrimidinyl)iridium(III) )(abbreviated as [Ir(tBuppm)3]) and other organic metal complexes with pyrimidine skeletons; (acetylacetonato)bis(2,3,5-triphenylpyrazine)iridium(III) (abbreviated as [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazine)(dipivaloylmethane)iridium(III) (abbreviated as [Ir(tppr)2(dpm)]), bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-5-phenyl-2-pyrazinyl-κN]phenyl-κC}(2,6-dimethyl-3,5-heptanedione-κ 2O,O') iridium (III) (abbreviation: [Ir(dmdppr-P)2(dibm)]), bis{4,6-dimethyl-2-[5-(4-cyano-2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedione-κ 2 O,O') iridium (III) (abbreviated as [Ir(dmdppr-dmCP)2(dpm)]), (acetylacetonato)bis[2-methyl-3-phenylquinoxalinato-N,C 2’ ]iridium (III) (abbreviation: [Ir(mpq)2(acac)]), (acetylacetonato)bis(2,3-diphenylquinoxalinato)-N,C 2’ ]iridium(III) (abbreviation: [Ir(dpq)2(acac)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]), bis{4,6-dimethyl-2-[5-(5-cyano-2-methylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedione-κ 2 O,O')iridium (III) (abbreviated as [Ir(dmdppr-m5CP)2(dpm)]) and other organic metal complexes with pyrazine skeleton; tris(1-phenylisoquinoline-N,C 2’ )iridium(III) (abbreviated as [Ir(piq)3]), bis(1-phenylisoquinoline-N,C 2 ') iridium (III) acetylacetonate (abbreviated as [Ir(piq)2(acac)]), bis[4,6-dimethyl-2-(2-quinolin-κN)phenyl-κC](2,4-pentanedione-κ 2 Organic metal complexes with a pyridine skeleton such as iridium (III) (O,O') iridium (III); platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum (II) (abbreviated as [PtOEP]); and rare earth metal complexes such as tris(1,3-diphenyl-1,3-propanedione (propanedionato))(monophenanthroline)europium (III) (abbreviated as [Eu(DBM)3(Phen)]), tris[1-(2-thiophenoyl)-3,3,3-trifluoroacetone](monophenanthroline)europium (III) (abbreviated as [Eu(TTA)3(Phen)]).

[0496] As the organic compound (host material, auxiliary material, etc.) used for the light-emitting layer, one or more substances having a larger energy gap than the light-emitting substance can be selected and used.

[0497] When the light-emitting substance used in the light-emitting layer is a fluorescent material, it is preferable to use an organic compound having a large energy level in a singlet excited state and a small energy level in a triplet excited state as the organic compound used in combination with the light-emitting substance.

[0498] Although partly overlaps with the above-mentioned specific examples, specific examples of the organic compound are shown below from the viewpoint of preferred combination with a light-emitting substance (fluorescent material, phosphorescent material).

[0499] When the light-emitting substance is a fluorescent material, examples of organic compounds that can be used in combination with the light-emitting substance include anthracene derivatives, naphthacene derivatives, phenanthrene derivatives, pyrene derivatives, (chrysene) derivatives, dibenzo[g,p] Derivatives and other fused polycyclic aromatic compounds.

[0500] Specific examples of the organic compound (host material) used in combination with the fluorescent material include 9-phenyl-3-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as PCzPA), 3,6-diphenyl-9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as DPCzPA), PCPN, 9,10-diphenylanthracene (abbreviated as DPAnth), N,N-diphenyl-9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole-3-amine (abbreviated as CzA1PA), 4-(10-phenyl-9-anthracenyl)triphenylamine (abbreviated as DPCzPA), PCPN, 9,10-diphenylanthracene (abbreviated as DPAnth), N,N-diphenyl-9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole-3-amine (abbreviated as CzA1PA), 4-(10-phenyl-9-anthracenyl)triphenylamine (abbreviated as DPCzPA), DPhPA), 4-(9H-carbazole-9-yl)-4'-(10-phenyl-9-anthracenyl)triphenylamine (abbreviated as: YGAPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole-3-amine (abbreviated as: PCAPA), N,9-diphenyl-N-{4-[4-(10-phenyl-9-anthracenyl)phenyl]phenyl}-9H-carbazole-3-amine (abbreviated as: PCAPBA), N-(9,10-diphenyl-2-anthracenyl)-N,9-diphenyl-9H-carbazole-3-amine (abbreviated as: 2PCAPA), 6,12-dimethoxy-5,11-diphenyl N,N,N',N',N",N",N"',N"'-octaphenyldibenzo[g,p] -2,7,10,15-tetramine (abbreviation: DBC1), CzPA, 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-{4-(9-phenyl-9H-fluorene-9-yl)-biphenyl-4'-yl}-anthracene (abbreviation: FLPPA), 9,10-bis(3,5-diphenylphenyl)anthracene ( Abbreviation: DPPA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 9,9'-bianthracene (abbreviation: BANT), 9,9'-(stilbene-3,3'-diyl)phenanthrene (abbreviation: DPNS), 9,9'-(stilbene-4,4'-diyl)phenanthrene (abbreviation: DPNS2), 1,3,5-tri(1-pyrene)benzene (abbreviation: TPB3), 5,12-diphenyl tetracene, 5,12-bis(biphenyl-2-yl) tetracene, etc.

[0501] When the light-emitting substance is a phosphorescent material, an organic compound having triplet excitation energy greater than the triplet excitation energy of the light-emitting substance (energy difference between the ground state and the triplet excited state) may be selected as the organic compound used in combination with the light-emitting substance.

[0502] When a plurality of organic compounds (for example, a first host material and a second host material (or an auxiliary material)) are used in combination with a light-emitting substance to form an exciplex, it is preferred to use the plurality of organic compounds in a mixture with a phosphorescent material (particularly an organometallic complex).

[0503] By adopting such a structure, light emission by ExTET (Exciplex-Triplet Energy Transfer) utilizing energy transfer from an exciplex to a luminescent substance can be efficiently obtained. As a combination of multiple organic compounds, a combination that easily forms an exciplex is preferably used, and a combination of a compound that easily receives holes (hole transport material) and a compound that easily receives electrons (electron transport material) is particularly preferably used. As specific examples of hole transport materials and electron transport materials, the materials shown in this embodiment can be used. Due to this structure, high efficiency, low voltage and long life of the light-emitting device can be achieved simultaneously.

[0504] Examples of organic compounds that can be used in combination with a light-emitting substance when the light-emitting substance is a phosphorescent material include aromatic amines, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, zinc metal complexes or aluminum metal complexes, oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyrimidine derivatives, triazine derivatives, pyridine derivatives, bipyridine derivatives, and phenanthroline derivatives.

[0505] In addition, as specific examples of aromatic amines (compounds having an aromatic amine skeleton), carbazole derivatives, dibenzothiophene derivatives (thiophene derivatives), and dibenzofuran derivatives (furan derivatives) as organic compounds with high hole-transporting properties, the same materials as the specific examples of the above-mentioned hole-transporting materials can be cited.

[0506] Specific examples of zinc metal complexes and aluminum metal complexes of organic compounds with high electron transport properties include: tris(8-hydroxyquinoline)aluminum(III) (abbreviation: Alq), tris(4-methyl-8-hydroxyquinoline)aluminum(III) (abbreviation: Almq3), bis(10-hydroxybenzo[h]quinoline)beryllium(II) (abbreviation: BeBq2), bis(2-methyl-8-hydroxyquinoline)(4-phenylphenol)aluminum(III) (abbreviation: BAlq), bis(8-hydroxyquinoline)zinc(II) (abbreviation: Znq), and other metal complexes having a quinoline skeleton or a benzoquinoline skeleton.

[0507] In addition, metal complexes having oxazolyl ligands or thiazole ligands such as bis[2-(2-benzoxazolyl)phenol]zinc(II) (abbreviated as ZnPBO) and bis[2-(2-benzothiazolyl)phenol]zinc(II) (abbreviated as ZnBTZ) can also be used.

[0508] In addition, specific examples of oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, and phenanthroline derivatives of organic compounds with high electron transport properties include 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 、3-(4-biphenyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviated as: TAZ), 3-(4-tert-butylphenyl)-4-(4-ethylphenyl)-5-(4-biphenyl)-1,2,4-triazole (abbreviated as: p-EtTAZ), 2,2',2"-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviated as: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviated as: mDBTBIm-II), 4,4'-bis(5 -methylbenzothiophen-2-yl)stilbene (BzOs), bathophenanthroline (Bphen), bathocuproin (BCP), 2,9-bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (NBphen), 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (2mDBTBPDBq-II), 2-[ 3'-(9H-carbazole-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9H-carbazole-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II) and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), etc.

[0509] Specific examples of heterocyclic compounds having a diazine skeleton, a triazine skeleton, and a pyridine skeleton as organic compounds with high electron transport properties include 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazole-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 2-{4-[3-(N-phenylene-3-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), [3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviated as mPCCzPTzn-02), 3,5-bis[3-(9H-carbazole-9-yl)phenyl]pyridine (abbreviated as 35DCzPPy), 1,3,5-tris[3-(3-pyridine)phenyl]benzene (abbreviated as TmPyPB), etc.

[0510] In addition, as organic compounds with high electron transport properties, high molecular weight compounds such as poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF-Py), and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-BPy) can also be used.

[0511] TADF material refers to a material that can use tiny thermal energy to up-convert the triplet excited state to the singlet excited state (reverse intersystem crossing) and efficiently emit luminescence (fluorescence) from the singlet excited state. The conditions for efficiently obtaining thermally activated delayed fluorescence are as follows: the energy difference between the triplet excited energy level and the singlet excited energy level is greater than 0 eV and less than 0.2 eV, preferably greater than 0 eV and less than 0.1 eV. The delayed fluorescence emitted by the TADF material refers to luminescence with the same spectrum as general fluorescence but with a very long lifetime. Its lifetime is 10 -6 More than 10 seconds, preferably 10 -3 seconds or more.

[0512] Examples of TADF materials include fullerene or its derivatives, acridine derivatives such as prussicin, eosin, etc. In addition, metal-containing porphyrins including magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd) can be cited. As metal-containing porphyrins, for example, protoporphyrin-tin fluoride complex (abbreviated as: SnF2(ProtoIX)), mesoporphyrin-tin fluoride complex (abbreviated as: SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (abbreviated as: SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (abbreviated as: SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (abbreviated as: SnF2(OEP)), protoporphyrin-tin fluoride complex (abbreviated as: SnF2(Etio I)) and octaethylporphyrin-platinum chloride complex (abbreviated as: PtCl2OEP) can also be mentioned.

[0513] In addition to the above, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazole-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), PCCzPTzn, 2-[4-(10H-phenoxazine-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazine-10-yl)phenyl]-4,5-diphenyl-1,2 , 4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-oxanthene-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracen]-10'-one (abbreviation: ACRSA) and the like having a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring. In addition, in the case of a substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded, the donor property of the π-electron-rich heteroaromatic ring and the acceptor property of the π-electron-deficient heteroaromatic ring are both strong, and the energy difference between the singlet excited state and the triplet excited state becomes small, so it is particularly preferred.

[0514] In addition, when using a TADF material, it can be combined with other organic compounds. In particular, the TADF material can be combined with the above-mentioned host material, hole transport material, and electron transport material.

[0515] Furthermore, the above materials can be used for forming a light-emitting layer by combining with a low-molecular material or a high-molecular material. For film formation, a known method (evaporation method, coating method, printing method, etc.) can be used appropriately.

[0516] <Electron Transport Layer> The electron transport layer is a layer that transports electrons injected from the cathode through the electron injection layer to the light-emitting layer. The electron transport layer is a layer containing an electron transport material. The electron transport material used in the electron transport layer preferably has a 1×10 -6 cm 2 In addition, any substance other than the above may be used as long as the electron transport property is higher than the hole transport property.

[0517] As electron-transporting materials, metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, and the like can be used. Materials with high electron-transporting properties such as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having quinoline ligands, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, nitrogen-containing heteroaromatic compounds, and other π-electron-deficient heteroaromatic compounds can also be used.

[0518] As specific examples of the electron transport material, the above-mentioned materials can be used.

[0519] <Electron Injection Layer> The electron injection layer is a layer containing a substance with high electron injection properties. As the electron injection layer, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2) and lithium oxide (LiO x ) or other alkali metals, alkaline earth metals or compounds of these metals. In addition, rare earth metal compounds such as erbium fluoride (ErF3) can be used. In addition, electron salts can also be used for the electron injection layer. As electron salts, for example, substances that add electrons to a mixed oxide of calcium and aluminum at a high concentration can be cited. In addition, the substances that constitute the electron transport layer as described above can also be used.

[0520] In addition, a composite material comprising an electron transport material and a donor material (electron donating material) can also be used for the electron injection layer. This composite material has excellent electron injection and electron transport properties because electrons are generated in the organic compound by the electron donor. In this case, the organic compound is preferably a material with excellent performance in transporting the generated electrons. Specifically, for example, an electron transport material (metal complex, heteroaromatic compound, etc.) for the electron transport layer as described above can be used. As an electron donor, any substance that exhibits electron donating properties to the organic compound can be used. Specifically, alkali metals, alkaline earth metals and rare earth metals are preferably used, and lithium, cesium, magnesium, calcium, erbium, ytterbium, etc. can be cited. In addition, alkali metal oxides or alkaline earth metal oxides are preferably used, and lithium oxide, calcium oxide, barium oxide, etc. can be cited. In addition, Lewis bases such as magnesium oxide can also be used. In addition, organic compounds such as tetrathiafulvalene (abbreviated as: TTF) can also be used.

[0521] <Charge Generation Layer> The charge generation layer is provided between two light-emitting units. The charge generation layer has a function of injecting electrons into one adjacent light-emitting unit and injecting holes into the other light-emitting unit when a voltage is applied between the anode and the cathode.

[0522] The charge generation layer may have a structure including a hole transport material and an acceptor material (electron accepting material) or an electron transport material and a donor material. By forming a charge generation layer with such a structure, an increase in driving voltage when stacking EL layers can be suppressed.

[0523] As the hole transport material, the acceptor material, the electron transport material, and the donor material, the above-mentioned materials can be used.

[0524] In addition, when manufacturing a light-emitting device of one embodiment of the present invention, a vacuum process such as evaporation or a solution process such as spin coating or inkjet can be used. As an evaporation method, a physical evaporation method (PVD method) such as sputtering, ion plating, ion beam evaporation, molecular beam evaporation, vacuum evaporation or chemical vapor deposition (CVD method) can be used. In particular, a functional layer (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer) and a charge generation layer included in the EL layer can be formed by evaporation (vacuum evaporation), coating (dip coating, dye coating, rod coating, spin coating, spray coating, etc.), printing (inkjet, screen printing (porcelain printing), offset printing (lithography), flexographic printing (letterpress printing), gravure printing, microcontact printing, etc.) and the like.

[0525] The materials constituting the functional layer and the charge generation layer of the light emitting device are not limited to the above materials. For example, as the material of the functional layer, a polymer compound (oligomer, dendrimer, polymer, etc.), a medium molecular compound (a compound between a low molecule and a polymer: a molecular weight of 400 to 4000), an inorganic compound (quantum dot material, etc.), etc. can be used. As the quantum dot material, a colloidal quantum dot material, an alloy quantum dot material, a core-shell quantum dot material, a core-type quantum dot material, etc. can be used.

[0526] This embodiment mode can be combined with other embodiment modes and examples as appropriate.

[0527] (Implementation 4) In this embodiment, refer to Fig. 20A and Fig. 20B A display device according to one embodiment of the present invention will be described.

[0528] A display device according to one embodiment of the present invention includes a first pixel circuit having a light-receiving device and a second pixel circuit having a light-emitting device. The first pixel circuit and the second pixel circuit are each arranged in a matrix.

[0529] Fig. 20A An example of a first pixel circuit having a light receiving device is shown, and Fig. 20B An example of a second pixel circuit having a light emitting device is shown.

[0530] Fig. 20A The pixel circuit PIX1 shown includes a light receiving device PD, a transistor M1, a transistor M2, a transistor M3, a transistor M4, and a capacitor C1. Here, an example in which a photodiode is used as the light receiving device PD is shown.

[0531] The cathode of the light receiving device PD is electrically connected to the wiring V1, and the anode is electrically connected to one of the source and drain of the transistor M1. The gate of the transistor M1 is electrically connected to the wiring TX, and the other of the source and drain is electrically connected to one electrode of the capacitor C1, one of the source and drain of the transistor M2, and the gate of the transistor M3. The gate of the transistor M2 is electrically connected to the wiring RES, and the other of the source and drain is electrically connected to the wiring V2. One of the source and drain of the transistor M3 is electrically connected to the wiring V3, and the other of the source and drain is electrically connected to one of the source and drain of the transistor M4. The gate of the transistor M4 is electrically connected to the wiring SE, and the other of the source and drain is electrically connected to the wiring OUT1.

[0532] Wiring V1, wiring V2, and wiring V3 are each supplied with a constant potential. When the light receiving device PD is driven with a reverse bias, a potential lower than that of wiring V1 is supplied to wiring V2. Transistor M2 is controlled by a signal supplied to wiring RES so that the potential of the node connected to the gate of transistor M3 is reset to the potential supplied to wiring V2. Transistor M1 is controlled by a signal supplied to wiring TX, and the timing of the potential change of the above-mentioned node is controlled according to the current flowing through the light receiving device PD. Transistor M3 is used as an amplifying transistor according to the potential output of the above-mentioned node. Transistor M4 is controlled by a signal supplied to wiring SE and is used as a selection transistor, which is used to read out the output according to the potential of the above-mentioned node using an external circuit connected to wiring OUT1.

[0533] Fig. 20B The pixel circuit PIX2 shown includes a light emitting device EL, a transistor M5, a transistor M6, a transistor M7, and a capacitor C2. Here, an example using a light emitting diode as the light emitting device EL is shown. In particular, an organic EL device is preferably used as the light emitting device EL.

[0534] The gate of the transistor M5 is electrically connected to the wiring VG, one of the source and the drain is electrically connected to the wiring VS, and the other of the source and the drain is electrically connected to one electrode of the capacitor C2 and the gate of the transistor M6. One of the source and the drain of the transistor M6 is electrically connected to the wiring V4, and the other of the source and the drain is electrically connected to the anode of the light emitting device EL and one of the source and the drain of the transistor M7. The gate of the transistor M7 is electrically connected to the wiring MS, and the other of the source and the drain is electrically connected to the wiring OUT2. The cathode of the light emitting device EL is electrically connected to the wiring V5.

[0535] Wiring V4 and wiring V5 are each supplied with a constant potential. The anode side and cathode side of the light emitting device EL can be set to a high potential and a potential lower than the anode side, respectively. The transistor M5 is controlled by a signal supplied to the wiring VG and is used as a selection transistor for controlling the selection state of the pixel circuit PIX2. In addition, the transistor M6 is used as a driving transistor for controlling the current flowing through the light emitting device EL according to the potential supplied to the gate. When the transistor M5 is in the on state, the potential supplied to the wiring VS is supplied to the gate of the transistor M6, and the light emitting brightness of the light emitting device EL can be controlled according to the potential. The transistor M7 is controlled by a signal supplied to the wiring MS, and the potential between the transistor M6 and the light emitting device EL is output to the outside through the wiring OUT2.

[0536] In the display device of this embodiment, the light emitting device can also emit light in a pulsed manner to display an image. By shortening the driving time of the light emitting device, the power consumption of the display device can be reduced and heat generation can be suppressed. In particular, organic EL devices are preferred because of their excellent frequency characteristics. For example, the frequency can be greater than 1 kHz and less than 100 MHz.

[0537] Here, transistors M1 , M2 , M3 , and M4 included in the pixel circuit PIX1 and transistors M5 , M6 , and M7 included in the pixel circuit PIX2 are preferably transistors whose channels are formed by semiconductor layers containing metal oxide (oxide semiconductor).

[0538] Transistors using metal oxides whose band gap is wider than silicon and whose carrier density is low can achieve extremely low off-state currents. Due to their low off-state currents, the charge stored in the capacitor connected in series with the transistor can be maintained for a long period of time. Therefore, in particular, transistors M1, transistors M2, and transistors M5 connected in series with capacitors C1 or C2 preferably use transistors containing oxide semiconductors. In addition, transistors other than these also use transistors containing oxide semiconductors, thereby reducing manufacturing costs.

[0539] Furthermore, transistors M1 to M7 may also be transistors whose channels are formed by semiconductors containing silicon. In particular, it is preferred to use highly crystalline silicon such as single crystal silicon or polycrystalline silicon because high field effect mobility can be achieved and higher speed operation can be achieved.

[0540] Note that at least one of the transistors M1 to M7 may be a transistor including an oxide semiconductor, and the other transistors may be a transistor including silicon.

[0541] exist Fig. 20A and Fig. 20B In the embodiment, an n-channel transistor is used as the transistor, but a p-channel transistor may also be used.

[0542] The transistors included in the pixel circuit PIX1 and the transistors included in the pixel circuit PIX2 are preferably arranged on the same substrate. In particular, the transistors included in the pixel circuit PIX1 and the transistors included in the pixel circuit PIX2 are preferably mixed and formed in one area and periodically arranged.

[0543] In addition, it is preferred to provide one or more layers including one or both of a transistor and a capacitor at a position overlapping with the light receiving device PD or the light emitting device EL. Thus, the effective occupied area of ​​each pixel circuit can be reduced, thereby realizing a high-definition light receiving unit or display unit.

[0544] This embodiment mode can be combined with other embodiment modes as appropriate.

[0545] (Implementation method 5) In this embodiment, using FIG. 21A to FIG. 23F An electronic device according to one embodiment of the present invention will be described.

[0546] The electronic device of this embodiment includes a light-emitting device of one embodiment of the present invention. For example, the light-emitting device of one embodiment of the present invention can be used in the display portion of an electronic device. In this case, the electronic device preferably includes a light sensor in addition to the light-emitting device. Because the light-emitting device of one embodiment of the present invention has the function of emitting both visible light and infrared light, it can not only display images on the display portion, but also emit light (one or both of visible light and infrared light) used as a light source for the light sensor. By combining the light-emitting device with the light sensor, biometric recognition or detection of touch (and proximity) can be performed. Thus, the functionality and convenience of the electronic device can be improved.

[0547] Alternatively, the electronic device of this embodiment includes a display device of one embodiment of the present invention. For example, the display device of one embodiment of the present invention can be used in the display unit of an electronic device. Since the display device of one embodiment of the present invention has the function of emitting both visible light and infrared light and the function of detecting light, it can not only display images on the display unit, but also perform biometric recognition or detect touch (and approach). Thus, the functionality and convenience of the electronic device can be improved.

[0548] Electronic devices include, for example, television sets, desktop or notebook personal computers, displays for computers, etc., digital signage, large-scale game consoles such as pinball machines, and other electronic devices with larger screens, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals, sound reproduction devices, and the like.

[0549] The electronic device of this embodiment may also include a sensor (the sensor has the function of measuring the following factors: force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, electricity, radiation, flow, humidity, inclination, vibration, smell or infrared).

[0550] The electronic device of this embodiment may have various functions. For example, it may have the following functions: a function of displaying various information (static images, dynamic images, text images, etc.) on a display unit; a function of a touch panel; a function of displaying a calendar, date, or time, etc.; a function of executing various software (programs); a function of wireless communication; a function of reading programs or data stored in a storage medium; etc.

[0551] Fig.21A The electronic device 6500 shown is a portable information terminal device that can be used as a smartphone.

[0552] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display portion 6502 has a touch panel function.

[0553] The display portion 6502 can use a light-emitting device or a display device which is one embodiment of the present invention.

[0554] Fig. 21B 65 is a schematic cross-sectional view of an end portion of a housing 6501 on a side of a microphone 6506 .

[0555] A light-transmitting protective component 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, an optical component 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are provided in the space surrounded by the housing 6501 and the protective component 6510.

[0556] The display panel 6511 , the optical member 6512 , and the touch sensor panel 6513 are fixed to the protective member 6510 using an adhesive layer (not shown).

[0557] In a region outside the display portion 6502, a portion of the display panel 6511 is folded back, and the folded back portion is connected to an FPC 6515. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0558] The display panel 6511 may use a flexible light-emitting device or a flexible display device of one embodiment of the present invention. Thus, an extremely lightweight electronic device may be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 may be installed while suppressing the thickness of the electronic device. In addition, by folding a portion of the display panel 6511 to provide a connection portion with the FPC 6515 on the back of the pixel portion, an electronic device with a narrow frame may be realized.

[0559] Fig.22A 100 shows an example of a television set. In a television set 7100, a display portion 7000 is incorporated in a housing 7101. Here, a structure in which the housing 7101 is supported by a stand 7103 is shown.

[0560] The light-emitting device or the display device which is one embodiment of the present invention can be applied to the display portion 7000 .

[0561] The operation can be performed by using the operation switch provided in the housing 7101 or the remote control operation machine 7111 provided separately. Fig.22A In addition, the display unit 7000 may be provided with a touch sensor, and the television set 7100 may be operated by touching the display unit 7000 with a finger or the like. In addition, the remote control unit 7111 may be provided with a display unit for displaying data output from the remote control unit 7111. By using the operation keys or the touch panel provided in the remote control unit 7111, the channel and volume can be operated, and the image displayed on the display unit 7000 can be operated.

[0562] In addition, the television device 7100 includes a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, the modem can be connected to a wired or wireless communication network to perform one-way (from a sender to a receiver) or two-way (between a sender and a receiver or between receivers, etc.) information communication.

[0563] Fig. 22B The notebook personal computer 7200 includes a housing 7211 , a keyboard 7212 , a pointing device 7213 , an external connection port 7214 , and the like. A display portion 7000 is incorporated in the housing 7211 .

[0564] The light-emitting device or the display device which is one embodiment of the present invention can be applied to the display portion 7000 .

[0565] Fig. 22C and Fig.22D An example of digital signage is shown.

[0566] Fig. 22C The digital signage 7300 shown includes a housing 7301, a display unit 7000, a speaker 7303, etc. In addition, an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, etc. may be included.

[0567] Fig.22D The digital signage 7400 is shown to be disposed on a cylindrical pillar 7401. The digital signage 7400 includes a display unit 7000 disposed along a curved surface of the pillar 7401.

[0568] exist Fig. 22C and Fig.22D In the embodiment of the present invention, a light-emitting device or a display device according to one embodiment of the present invention can be applied to the display portion 7000.

[0569] The larger the display unit 7000 is, the more information can be provided at one time. The larger the display unit 7000 is, the easier it is to attract people's attention, for example, the advertising effect can be improved.

[0570] By using a touch panel for the display unit 7000, not only can a static image or a dynamic image be displayed on the display unit 7000, but the user can also intuitively operate it, so it is preferred. In addition, when used for providing information such as route information or traffic information, the ease of use can be improved through intuitive operation.

[0571] like Fig. 22C and Fig.22D As shown, the digital signage 7300 or the digital signage 7400 can preferably be linked with the information terminal device 7311 or the information terminal device 7411 such as a smartphone carried by the user through wireless communication. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal device 7311 or the information terminal device 7411. In addition, by operating the information terminal device 7311 or the information terminal device 7411, the display of the display unit 7000 can be switched.

[0572] Furthermore, the game can be executed on the digital signage 7300 or the digital signage 7400 using the screen of the information terminal device 7311 or the information terminal device 7411 as an operation unit (controller). Thus, an unspecified number of users can participate in the game at the same time and enjoy the game.

[0573] FIG. 23A to FIG. 23F The electronic device shown includes a housing 9000, a display portion 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connecting terminal 9006, a sensor 9007 (the sensor has the function of measuring the following factors: force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, electricity, radiation, flow, humidity, inclination, vibration, smell or infrared), a microphone 9008, etc.

[0574] FIG. 23A to FIG. 23FThe electronic device shown has various functions. For example, it may have the following functions: a function of displaying various information (static images, dynamic images, text images, etc.) on a display unit; a function of a touch panel; a function of displaying a calendar, date, or time, etc.; a function of controlling processing by using various software (programs); a function of wireless communication; a function of reading out programs or data stored in a storage medium and processing them; etc. Note that the functions that an electronic device may have are not limited to the above functions, but may have various functions. An electronic device may include multiple display units. In addition, a camera or the like may be provided in an electronic device so that it has the following functions: a function of taking a static image or a dynamic image, and storing the taken image in a storage medium (an external storage medium or a storage medium built into a camera); a function of displaying the taken image on a display unit; etc.

[0575] Below, we explain in detail FIG. 23A to FIG. 23F Electronic equipment shown.

[0576] Fig.23A 9101 is a perspective view showing a portable information terminal 9101. The portable information terminal 9101 can be used as a smart phone, for example. Note that a speaker 9003, a connection terminal 9006, a sensor 9007, and the like can also be provided in the portable information terminal 9101. In addition, as the portable information terminal 9101, text or image information can be displayed on multiple surfaces thereof. Fig.23A 9050. In addition, information 9051 indicated by a dotted rectangle may be displayed on another surface of display unit 9001. Examples of information 9051 include information indicating that an email, SNS, or phone call has been received; a title of the email or SNS; a sender's name of the email or SNS; a date; a time; a remaining battery level; and a display of the antenna reception signal strength. Alternatively, icon 9050 may be displayed at a location where information 9051 is displayed.

[0577] Fig. 23B 9102 is a three-dimensional diagram showing a portable information terminal 9102. The portable information terminal 9102 has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, when the portable information terminal 9102 is placed in a jacket pocket, the user can confirm the information 9053 displayed at a position viewed from above the portable information terminal 9102. The user can confirm the display without taking the portable information terminal 9102 out of the pocket, thereby being able to determine whether to answer the call.

[0578] Fig.23C9001 is a perspective view showing a watch-type portable information terminal 9200. The portable information terminal 9200 can be used as a smart watch, for example. In addition, the display surface of the display unit 9001 is curved, and a display can be performed along the curved display surface. In addition, the portable information terminal 9200 can perform hands-free calls, for example, by communicating with a headset capable of wireless communication. In addition, by using the connection terminal 9006, the portable information terminal 9200 can perform data transmission or charging with other information terminals. Charging can also be performed by wireless power supply.

[0579] FIG. 23D to FIG. 23F 9201 is a perspective view showing a foldable portable information terminal. Fig.23D is a perspective view of the portable information terminal 9201 in an unfolded state. Fig.23F This is a three-dimensional diagram of the folded state. Fig.23E is from Fig.23D Status and Fig.23F The portable information terminal 9201 is easy to carry in the folded state, and has a large display area that is seamlessly spliced ​​in the unfolded state, so the display is easy to browse. The display unit 9001 included in the portable information terminal 9201 is supported by three housings 9000 connected by hinges 9055. The display unit 9001 can be bent within a range of a curvature radius of 0.1 mm or more and 150 mm or less, for example.

[0580] This embodiment mode can be combined with other embodiment modes and examples as appropriate. [Example 1]

[0581] In this embodiment, the results of studies using software are described regarding the device structure of a light-emitting device that emits visible light and infrared light and can be used in a light-emitting device or a display device according to one embodiment of the present invention.

[0582] Specifically, in this embodiment, Fig.24A The device structure of the light-emitting device 47B (IR) that emits blue light and infrared light is studied.

[0583] First, the structural formula of the organic compound whose measured values ​​(refractive index n, extinction coefficient k, emission spectrum, etc.) were used in the calculation of this example is shown below.

[0584] [Chemical formula 1]

[0585] In this embodiment, calculations were performed using an organic device simulator (semiconducting emissive thin film optics simulator: setfos; manufactured by CYBERNET SYSTEMS CO., LTD.).

[0586] In this calculation, the thickness of each layer constituting the light-emitting device, the refractive index n (measured value), the extinction coefficient k (measured value), the measured value of the emission spectrum (photoluminescence (PL) spectrum) of the light-emitting material, and the position of the light-emitting area are input and multiplied by the Purcell factor, and the luminous intensity and spectral waveform in the front direction are calculated taking into account the change in the radioactive decay rate of the excitons.

[0587] The refractive index n and extinction coefficient k of each layer were measured by using a spectroscopic ellipsometer (M-2000U manufactured by JA Woollam Japan). For the measurement, a thin film of a material of each layer formed on a quartz substrate by vacuum deposition with a thickness of about 50 nm was used.

[0588] In the measurement of the emission spectrum of the luminescent material, a multi-channel spectrometer (C10029-01 manufactured by Hamamatsu Photonics Co., Ltd., Japan) was used as a detector for visible light, a near-infrared spectroradiometer (SR-NIR, manufactured by Topcon) was used as a detector for near-infrared light, an ultraviolet LED (NSCU033B manufactured by Nichia Chemical Corporation) was used as the excitation light, UVU360 (manufactured by Edmund Optics Co., Ltd.) was used as a bandpass filter, and SCF-50S-42L (manufactured by Sigma Koki Co., Ltd.) was used as a high-pass filter.

[0589] In the measurement of the visible light emission spectrum, a thin film was used in which 7-[4-(10-phenyl-9-anthracenyl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviated as cgDBCzPA) and N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluorene-9-yl)phenyl]pyrene-1,6-diamine (abbreviated as 1,6mMemFLPAPrn) were co-deposited on a quartz substrate using a vacuum evaporation method in a weight ratio of 1:0.03 and a thickness of 50 nm.

[0590] In the measurement of infrared emission spectrum, 2-[3'-(dibenzothiophene-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF) and bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-2-benzo[g]quinoxaline-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedione-κ 2 A thin film of iridium (III) (O, O') (abbreviated as [Ir(dmdpbq)2(dpm)]) was formed on a quartz substrate by co-deposition using a vacuum evaporation method in a weight ratio of 0.7:0.3:0.1 and a thickness of 50 nm. An example of the synthesis of [Ir(dmdpbq)2(dpm)] will be described later in the reference example.

[0591] Fig.25 The PL spectra used for calculation are shown. Fig.25 In FIG. 1 , the horizontal axis represents the wavelength (unit: nm), and the vertical axis represents the normalized PL intensity based on energy (arbitrary unit). Here, the PL intensity based on photons can be obtained by multiplying the PL intensity based on energy by the wavelength.

[0592] The light emitting area is assumed to be the center of the light emitting layer.

[0593] The luminescence quantum yield, exciton generation probability, and recombination probability of visible light and infrared light are all assumed to be 100%. In other words, the calculated external quantum efficiency (Lambertian assumption) represents the light extraction efficiency calculated from the front luminescence intensity assuming Lambertian radiation.

[0594] Fig.24A The light emitting device 47B (IR) shown for this embodiment has a tandem structure including a charge generation layer as an intermediate layer 198. In the light emitting device 47B (IR), a light emitting unit emitting blue light from the light emitting layer 193B is provided on a light emitting unit emitting infrared light from the light emitting layer 193N.

[0595] The calculation is performed by setting the initial value as follows: Fig.24A As shown, the optical distance between the pixel electrode 191 and the light-emitting area of ​​the light-emitting layer 193B is approximately 3λB / 4, the optical distance between the common electrode 115 and the light-emitting area of ​​the light-emitting layer 193B is approximately λB / 4, the optical distance between the pixel electrode 191 and the light-emitting area of ​​the light-emitting layer 193N is approximately λi / 4, and the optical distance between the common electrode 115 and the light-emitting area of ​​the light-emitting layer 193N is approximately λi / 4.

[0596] In this embodiment, the wavelength λB of visible light is the wavelength of blue light (467 nm) specified by BT.2020, and the wavelength λi of infrared light is assumed to be secondary light of blue light (934 nm).

[0597] The device structure of the light emitting device 47B (IR) used in this embodiment is described with reference to Table 2. Note that the hole injection layer, the electron injection layer, and the charge generation layer are omitted for simplification of calculation.

[0598] [Table 2] ※Thickness optimized by calculation

[0599] As the substrate 151 , a glass substrate having a thickness of 0.7 mm and a refractive index of 1.5 was assumed.

[0600] As the pixel electrode 191 , a stacked-layer structure of a 100-nm-thick silver (Ag) film and a 10-nm-thick indium tin oxide containing silicon oxide (ITSO) film is used.

[0601] Assuming a hole transport layer, PCBBiF was used as the buffer layer 192B. The buffer layer 192B is a layer for optical adjustment, and the most suitable thickness thereof was determined by calculation.

[0602] The thickness of the light-emitting layer 193N was set to 40 nm, and 2mDBTBPDBq-II was used as its host material.

[0603] As the intermediate layer 198, a stacked structure of 2,9-bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline derivative (abbreviated as NBphen) and 3-[4-(9-phenanthrenyl)-phenyl]-9-phenyl-9H-carbazole (abbreviated as PCPPn) with a thickness of 10 nm was used. The NBphen included in the intermediate layer 198 is a layer for optical adjustment, and its most suitable thickness was calculated.

[0604] As a host material of the light-emitting layer 193B, cgDBCzPA with a thickness of 25 nm was used.

[0605] Assuming an electron transport layer, NBphen was used as the buffer layer 194B. The buffer layer 194B is a layer for optical adjustment, and the most suitable thickness thereof was determined by calculation.

[0606] As the common electrode 115, a silver film with a thickness of 15 nm was used.

[0607] As the buffer layer 116 , 1,3,5-tris(dibenzothiophene-4-yl)benzene (abbreviation: DBT3P-II) with a thickness of 70 nm was used.

[0608] The upper side of the buffer layer 116 (the side opposite to the side in contact with the common electrode 115 ) is assumed to be air (refractive index is 1).

[0609] Using the above conditions, the most suitable device structure of the light-emitting device is found through calculation.

[0610] In the calculation, the optical distance of the entire light-emitting device and the thickness of NBPhen of the buffer layer 194B at which the external quantum efficiency of visible light (Lambert assumption) is maximized are determined, and the thickness of PCBBiF of the buffer layer 192B and the thickness of NBPhen of the intermediate layer 198 are determined in a manner that maximizes the external quantum efficiency (Lambert assumption) under the conditions of the optical distance of the entire light-emitting device and the thickness of NBPhen of the buffer layer 194B.

[0611] Specifically, once the thickness of NBPhen of the intermediate layer 198 is set, the thickness of PCBBiF of the buffer layer 192B and the thickness of NBPhen of the buffer layer 194B are optimized in such a way that the external quantum efficiency (Lambert assumption) of visible light under this condition is maximized. Then, while the peak wavelength of infrared light is fixed, the thickness of PCBBiF of the buffer layer 192B and the thickness of NBPhen of the intermediate layer 198 are optimized in such a way that the external quantum efficiency (Lambert assumption) is maximized.

[0612] As shown in Table 2, the following results are obtained through calculation: in the light-emitting device 47B (IR), the thickness of PCBBiF of the buffer layer 192B is 63 nm, the thickness of NBPhen of the intermediate layer 198 is 5.6 nm, and the thickness of NBPhen of the buffer layer 194B is 36 nm.

[0613] Fig.26 The emission (EL) spectrum of the light emitting device 47B (IR) obtained by calculation is shown. Fig.26 In FIG. 1 , the horizontal axis represents the wavelength (unit: nm), and the vertical axis represents the normalized luminous intensity based on energy (arbitrary unit).

[0614] like Fig.26 As shown, the peak wavelength of visible light of the light emitting device 47B (IR) is 460 nm, and the peak wavelength of infrared light is 880 nm. It can be seen that the peak wavelength of infrared light is shorter than twice the peak wavelength of visible light (920 nm).

[0615] The calculated external quantum efficiency (Lambert assumption) of visible light of the light emitting device 47B (IR) is relatively high, approximately 30%. In addition, the external quantum efficiency (Lambert assumption) of infrared light is also relatively high, approximately 30%.

[0616] Fig. 27The CIE 1931 chromaticity coordinates (xy chromaticity coordinates) of the light emitting device obtained by calculation are shown. Fig. 27 The chromaticity coordinates of the NTSC standard and the BT.2020 standard are also shown. Fig. 27 As shown, the chromaticity (x, y) of the light-emitting device on the CIE1931 chromaticity coordinates is (0.138, 0.050), which corresponds to the NTSC specification and the BT.2020 specification.

[0617] As described above, in the light emitting device obtained by calculation in this example, the peak wavelength of infrared light is shorter than twice the peak wavelength of visible light (920 nm). This is considered to be due to the wavelength dependency of the refractive index.

[0618] Here, Fig.28 The wavelength dependence of the ordinary refractive index of PCBBiF and NBPhen is shown. As a comparative example, Fig.28 The wavelength dependence of the ordinary refractive index of 1,1-bis-(4-bis(4-methyl-phenyl)-amino-phenyl)-cyclohexane (abbreviation: TAPC) is also shown.

[0619] When measuring the refractive index, a thin film of about 50 nm thickness formed by vacuum evaporation of each material on a quartz substrate is used. Since the anisotropy of the refractive index occurs in the film, the refractive index is separated into the ordinary light refractive index and the extraordinary light refractive index when calculating the refractive index. In the above calculation, the ordinary light refractive index is used.

[0620] according to Fig.28 It can be seen that the ordinary light refractive index of PCBBiF with respect to light of wavelength 460nm is about 1.94, and the ordinary light refractive index with respect to light of wavelength 880nm is about 1.77, and the difference between them is about 0.17. In addition, the ordinary light refractive index of NBPhen with respect to light of wavelength 460nm is about 1.97, and the ordinary light refractive index with respect to light of wavelength 880nm is about 1.80, and the difference between them is about 0.17. It can be seen that the refractive index of PCBBiF and NBPhen whose thickness is optimized in this embodiment with respect to infrared light is lower than the refractive index with respect to visible light. It can be seen that the peak wavelength of infrared light drifts to the short wavelength side and is shorter than twice the peak wavelength of visible light (920nm).

[0621] On the other hand, the ordinary refractive index of TAPC shown as a comparative example with respect to light of a wavelength of 460 nm is about 1.72, and the ordinary refractive index with respect to light of a wavelength of 880 nm is about 1.65, and the difference between them is about 0.07.

[0622] Thus, it was confirmed that the wavelength dependence of the refractive index differs depending on the organic film. It is known that the peak wavelength of infrared light can be controlled by utilizing the wavelength dependence of the refractive index of the organic film.

[0623] Based on the results of this example, it is possible to estimate the device structure of a light-emitting device that can extract both blue light and infrared light with high efficiency. [Example 2]

[0624] In this embodiment, the results of studies using software are described regarding the device structure of a light-emitting device that emits visible light and infrared light and can be used in a light-emitting device or a display device according to one embodiment of the present invention.

[0625] Specifically, in this embodiment, Fig. 24B , Fig.24C The device structures of the light-emitting device 47R(IR)a and the light-emitting device 47R(IR)b that emit red light and infrared light are discussed as shown.

[0626] In this example, calculations were performed using the same organic device simulator as in Example 1.

[0627] In this calculation, the thickness of each layer constituting the light-emitting device, the refractive index n, the extinction coefficient k, the measured value of the emission spectrum (photoluminescence (PL) spectrum) of the light-emitting material, and the position of the light-emitting area are input and multiplied by the Purcell factor, and the luminous intensity and spectral waveform in the front direction are calculated taking into account the change in the radioactive decay rate of the excitons.

[0628] As described below, in this embodiment, it is assumed that the wavelength of infrared light exceeds 1000nm, but there are no measured values ​​of the refractive index and extinction coefficient of each layer other than the silver film in the wavelength region exceeding 1000nm, so in this embodiment, the refractive index n of all layers other than the silver film is assumed to be 1.8 for calculation.

[0629] In the measurement of the visible light emission spectrum, 2mDBTBPDBq-II, PCBBiF and bis{2-[5-(2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]-4,6-dimethylphenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedione-κ 2 A thin film of iridium (III) (abbreviated as [Ir(dmdppr-dmp)2(dpm)]) was formed on a quartz substrate by co-deposition using a vacuum evaporation method at a weight ratio of 0.8:0.2:0.05 and a thickness of 50 nm. Other measurement conditions were the same as those in Example 1.

[0630] The structural formula of [Ir(dmdppr-dmp)2(dpm)] is shown below.

[0631] [Chemical formula 2]

[0632] As the emission spectrum of infrared light, a spectrum obtained by shifting the emission spectrum of visible light to the longer wavelength side by 655 nm was used.

[0633] Fig.29 The photoluminescence (PL) spectra used for the calculations are shown. Fig.29 In FIG. 1 , the horizontal axis represents the wavelength (unit: nm), and the vertical axis represents the normalized PL intensity based on energy (arbitrary unit).

[0634] The light emitting area is assumed to be the center of the light emitting layer.

[0635] The luminescence quantum yield, exciton generation probability, and recombination probability of visible and infrared light are all assumed to be 100%.

[0636] Fig. 24B , Fig.24C The light emitting device 47R(IR)a and the light emitting device 47R(IR)b shown for this embodiment have a tandem structure including a charge generation layer as an intermediate layer 198. The stacking order of the light emitting layer 193N and the light emitting layer 193R of the two light emitting devices is different from each other.

[0637] exist Fig. 24B In the light emitting device 47R(IR)a shown, a light emitting unit that emits red light from the light emitting layer 193R is provided above a light emitting unit that emits infrared light from the light emitting layer 193N.

[0638] The calculation is performed by setting the initial value as follows: Fig. 24B As shown, the optical distance between the pixel electrode 191 and the light-emitting area of ​​the light-emitting layer 193R is approximately 3λR / 4, the optical distance between the common electrode 115 and the light-emitting area of ​​the light-emitting layer 193R is approximately λR / 4, the optical distance between the pixel electrode 191 and the light-emitting area of ​​the light-emitting layer 193N is approximately λi / 4, and the optical distance between the common electrode 115 and the light-emitting area of ​​the light-emitting layer 193N is approximately λi / 4.

[0639] exist Fig.24C In the light emitting device 47R(IR)b shown, a light emitting unit that emits infrared light from a light emitting layer 193N is provided above a light emitting unit that emits red light from a light emitting layer 193R.

[0640] The calculation is performed by setting the initial value as follows: Fig.24CAs shown, the optical distance between the pixel electrode 191 and the light-emitting area of ​​the light-emitting layer 193R is approximately λR / 4, the optical distance between the common electrode 115 and the light-emitting area of ​​the light-emitting layer 193R is approximately 3λR / 4, the optical distance between the pixel electrode 191 and the light-emitting area of ​​the light-emitting layer 193N is approximately λi / 4, and the optical distance between the common electrode 115 and the light-emitting area of ​​the light-emitting layer 193N is approximately λi / 4.

[0641] In this embodiment, the wavelength λR of visible light is the wavelength of red light (630 nm) specified by BT.2020, and the wavelength λi of infrared light is assumed to be secondary light of red light (1260 nm).

[0642] The device structures of the light emitting device 47R(IR)a and the light emitting device 47R(IR)b used in this embodiment are described with reference to Tables 3 and 4.

[0643] Note that for simplification of calculation, the hole injection layer, the electron injection layer, and the charge generation layer are omitted.

[0644] [Table 3] ※Thickness optimized by calculation

[0645] [Table 4] ※Thickness optimized by calculation

[0646] As the substrate 151 , a glass substrate having a thickness of 0.7 mm and a refractive index of 1.5 was assumed.

[0647] As the pixel electrode 191, a stacked-layer structure of a silver film with a thickness of 100 nm and a layer with a thickness of 10 nm (assuming a transparent electrode) is used.

[0648] A hole transport layer is assumed as the buffer layer 192R. The buffer layer 192R is a layer used for optical adjustment, and its most suitable thickness is obtained by calculation.

[0649] The thickness of the light-emitting layer 193N and the light-emitting layer 193R are both set to 40 nm.

[0650] A stacked structure of a layer for optical adjustment (assuming an electron transport layer) and a layer with a thickness of 10 nm (assuming a hole transport layer) was used as the intermediate layer 198. The most suitable thickness of the layer for optical adjustment included in the intermediate layer 198 was found by calculation.

[0651] An electron transport layer is assumed as the buffer layer 194R. The buffer layer 194R is a layer for optical adjustment, and its most suitable thickness is obtained by calculation.

[0652] As the common electrode 115, a silver film with a thickness of 15 nm was used.

[0653] As the buffer layer 116 , a layer having a thickness of 70 nm was used.

[0654] The upper side of the buffer layer 116 (the side opposite to the side in contact with the common electrode 115 ) is assumed to be air (refractive index is 1).

[0655] Using the above conditions, the most suitable device structure of the light-emitting device is found through calculation.

[0656] In the calculation, the optical distance of the entire light-emitting device and the NBPhen thickness of the buffer layer 194R at which the external quantum efficiency of visible light (Lambert assumption) is maximized are determined, and the PCBBiF thickness of the buffer layer 192R and the NBPhen thickness of the intermediate layer 198 are determined in a manner that maximizes the external quantum efficiency of infrared light (Lambert assumption) under the conditions of the optical distance of the entire light-emitting device and the NBPhen thickness of the buffer layer 194R.

[0657] Specifically, once the thickness of NBPhen of the intermediate layer 198 is set, the thickness of PCBBiF of the buffer layer 192R and the thickness of NBPhen of the buffer layer 194R are optimized in such a way that the external quantum efficiency (Lambert assumption) of visible light under this condition is maximized. Then, while the peak wavelength of infrared light is fixed, the thickness of PCBBiF of the buffer layer 192R and the thickness of NBPhen of the intermediate layer 198 are optimized in such a way that the external quantum efficiency (Lambert assumption) is maximized.

[0658] As shown in Table 3, the following results are obtained by calculation: in the light emitting device 47R(IR)a, the thickness of the PCBBiF of the buffer layer 192R is 106nm, the thickness of the NBPhen of the intermediate layer 198 is 27nm, and the thickness of the NBPhen of the buffer layer 194R is 58nm. In addition, as shown in Table 4, the following results are obtained: in the light emitting device 47R(IR)b, the thickness of the PCBBiF of the buffer layer 192R is 35nm, the thickness of the NBPhen of the intermediate layer 198 is 30nm, and the thickness of the NBPhen of the buffer layer 194R is 127nm.

[0659] Fig.30 and Fig.31 The emission (EL) spectra of the light emitting device 47R(IR)a and the light emitting device 47R(IR)b obtained by calculation are shown. Fig.30 and Fig.31In FIG. 1 , the horizontal axis represents the wavelength (unit: nm), and the vertical axis represents the normalized luminous intensity based on energy (arbitrary unit).

[0660] like Fig.30 As shown, the peak wavelength of visible light of the light emitting device 47R(IR)a is 612 nm, and the peak wavelength of infrared light is 1272 nm. It can be seen that the peak wavelength of infrared light is nearly twice the peak wavelength of visible light (1224 nm).

[0661] The calculated external quantum efficiency (Lambert assumption) of visible light of the light emitting device 47R(IR)a is relatively high, approximately 38%. In addition, the external quantum efficiency (Lambert assumption) of infrared light is also relatively high, approximately 90%. It can be considered that since the peak wavelength of infrared light is close to the assumed wavelength (1260nm), the light extraction efficiency of infrared light is greatly improved due to the effect of the microcavity structure.

[0662] like Fig.31 As shown, the peak wavelength of visible light of the light emitting device 47R(IR)b is 614 nm, and the peak wavelength of infrared light is 1274 nm. It can be seen that the peak wavelength of infrared light is nearly twice the peak wavelength of visible light (1228 nm).

[0663] The calculated external quantum efficiency (Lambert assumption) of visible light of the light emitting device 47R(IR)b is relatively high, approximately 34%. In addition, the external quantum efficiency (Lambert assumption) of infrared light is also relatively high, approximately 88%. It can be considered that since the peak wavelength of infrared light is close to the assumed wavelength (1260nm), the light extraction efficiency of infrared light is greatly improved due to the effect of the microcavity structure.

[0664] Fig.32 and Fig.33 The CIE 1931 chromaticity coordinates (xy chromaticity coordinates) of the light emitting device 47R(IR)a and the light emitting device 47R(IR)b obtained by calculation are shown. Fig.32 and Fig.33 The chromaticity coordinates of the NTSC standard and the BT.2020 standard are also shown. Fig.32 As shown, the chromaticity (x, y) of the light emitting device 47R(IR)a on the CIE1931 chromaticity coordinates is (0.657, 0.343). Fig.33 As shown, the chromaticity (x, y) of the light emitting device 47R(IR)b on the CIE1931 chromaticity coordinates is (0.662, 0.338). Fig.32 and Fig.33 It can be seen that the light-emitting device 47R(IR)a and the light-emitting device 47R(IR)b both correspond to the NTSC standard and the BT.2020 standard.

[0665] Based on the results of this example, it is possible to estimate the device structure of a light emitting device that can efficiently extract both red light and infrared light regardless of the stacking order of the red light emitting layer and the infrared light emitting layer. [Example 3]

[0666] In this embodiment, the results of studies using software are described regarding the device structure of a light-emitting device that emits visible light and infrared light and can be used in a light-emitting device or a display device according to one embodiment of the present invention.

[0667] Specifically, in this embodiment, Fig.24D The device structure of the light-emitting device 47R(IR)c that emits red light and infrared light is studied.

[0668] In this example, calculations were performed using the same organic device simulator as in Example 1.

[0669] In this calculation, the thickness of each layer constituting the light-emitting device, the refractive index n (measured value), the extinction coefficient k (measured value), the measured value of the emission spectrum (photoluminescence (PL) spectrum) of the light-emitting material, and the position of the light-emitting area are input and multiplied by the Purcell factor, and the luminous intensity and spectral waveform in the front direction are calculated taking into account the change in the radioactive decay rate of the excitons.

[0670] The refractive index n and extinction coefficient k of each layer were measured by using a spectroscopic ellipsometer (M-2000U manufactured by JA Woollam Japan). For the measurement, a thin film of a material of each layer formed on a quartz substrate by vacuum deposition with a thickness of about 50 nm was used.

[0671] In the measurement of the visible light emission spectrum, 2mDBTBPDBq-II, PCBBiF and bis{4,6-dimethyl-2-[5-(5-cyano-2-methylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedione-κ 2 A thin film of iridium (III) (abbreviated as [Ir(dmdppr-m5CP)2(dpm)]) was formed on a quartz substrate by co-deposition using a vacuum evaporation method at a weight ratio of 0.8:0.2:0.1 and a thickness of 50 nm. Other measurement conditions were the same as those in Example 1.

[0672] The structural formula of [Ir(dmdppr-m5CP)2(dpm)] is shown below.

[0673] [Chemical formula 3]

[0674] The emission spectrum of infrared light used in this embodiment is the same as that of Embodiment 1.

[0675] Fig.34 The photoluminescence (PL) spectra used for the calculations are shown. Fig.34 In FIG. 1 , the horizontal axis represents the wavelength (unit: nm), and the vertical axis represents the normalized PL intensity based on energy (arbitrary unit).

[0676] The light emitting area is assumed to be the center of the light emitting layer.

[0677] The luminescence quantum yield, exciton generation probability, and recombination probability of visible and infrared light are all assumed to be 100%.

[0678] Fig.24D The light emitting device 47R(IR)c shown for this embodiment has a tandem structure including a charge generation layer as the intermediate layer 198 .

[0679] exist Fig.24D In the light emitting device 47R(IR)c shown, a light emitting unit that emits red light from the light emitting layer 193R is provided above a light emitting unit that emits infrared light from the light emitting layer 193N.

[0680] The calculation is performed by setting the initial value as follows: Fig.24D As shown, the optical distance between the pixel electrode 191 and the light-emitting area of ​​the light-emitting layer 193R is approximately 5λR / 4, the optical distance between the common electrode 115 and the light-emitting area of ​​the light-emitting layer 193R is approximately λR / 4, the optical distance between the pixel electrode 191 and the light-emitting area of ​​the light-emitting layer 193N is approximately λi / 4, and the optical distance between the common electrode 115 and the light-emitting area of ​​the light-emitting layer 193N is approximately 3λi / 4.

[0681] In this embodiment, the wavelength λR of visible light is the wavelength of red light (630 nm) specified by BT.2020, and the wavelength λi of infrared light is assumed to be 945 nm.

[0682] Referring to Table 5, the device structure of the light emitting device 47R(IR)c used in this embodiment is described.

[0683] Note that for simplification of calculation, the hole injection layer, the electron injection layer, and the charge generation layer are omitted.

[0684] [Table 5] ※Thickness optimized by calculation

[0685] As the substrate 151 , a glass substrate having a thickness of 0.7 mm and a refractive index of 1.5 was assumed.

[0686] As the pixel electrode 191, a stacked-layer structure of a silver film with a thickness of 100 nm and an ITSO film with a thickness of 10 nm was used.

[0687] Assuming a hole transport layer, PCBBiF was used as the buffer layer 192R. The buffer layer 192R is a layer for optical adjustment, and the most suitable thickness thereof was determined by calculation.

[0688] The thickness of the light-emitting layer 193N and the light-emitting layer 193R were both set to 40 nm, and 2mDBTBPDBq-II was used as the host material.

[0689] A stacked structure of NBphen and PCBBiF with a thickness of 10 nm was used as the intermediate layer 198. NBphen included in the intermediate layer 198 is a layer for optical adjustment, and its most suitable thickness was found by calculation.

[0690] As the buffer layer 194R, NBphen was used, assuming an electron transport layer. The buffer layer 194R is a layer for optical adjustment, and the most suitable thickness thereof was determined by calculation.

[0691] As the common electrode 115, a silver film with a thickness of 15 nm was used.

[0692] As the buffer layer 116 , DBT3P-II having a thickness of 70 nm was used.

[0693] The upper side of the buffer layer 116 (the side opposite to the side in contact with the common electrode 115 ) is assumed to be air (refractive index is 1).

[0694] Using the above conditions, the most suitable device structure of the light emitting device is obtained by calculation. The calculation method is the same as that of Example 2, so detailed description is omitted here.

[0695] As shown in Table 5, the following results are obtained by calculation: in the light emitting device 47R(IR)c, the thickness of PCBBiF of the buffer layer 192R is 99 nm, the thickness of NBPhen of the intermediate layer 198 is 229 nm, and the thickness of NBPhen of the buffer layer 194R is 60 nm.

[0696] Fig.35 The emission (EL) spectrum of the light emitting device 47R(IR)c obtained by calculation is shown. Fig.35 In FIG. 1 , the horizontal axis represents the wavelength (unit: nm), and the vertical axis represents the normalized luminous intensity based on energy (arbitrary unit).

[0697] like Fig.35As shown, the peak wavelength of visible light of the light emitting device 47R(IR)c is 651nm, and the peak wavelength of infrared light is 978nm. It can be seen that the peak wavelength of infrared light is approximately 1.5 times (977nm) the peak wavelength of visible light.

[0698] The calculated external quantum efficiency of visible light of the light emitting device 47R(IR)c (Lambertian assumption) is relatively high, approximately 27%. In addition, the external quantum efficiency of infrared light (Lambertian assumption) is also relatively high, approximately 11%.

[0699] Fig.36 The CIE 1931 chromaticity coordinates (xy chromaticity coordinates) of the light emitting device 47R(IR)c obtained by calculation are shown. Fig.36 The chromaticity coordinates of the NTSC standard and the BT.2020 standard are also shown. Fig.36 As shown, the chromaticity (x, y) of the light emitting device 47R(IR)c on the CIE1931 chromaticity coordinates is (0.704, 0.285). Fig.36 It can be seen that the light-emitting device 47R(IR)c corresponds to the NTSC standard and the BT.2020 standard.

[0700] Based on the results of this example, it is possible to estimate the device structure of a light-emitting device that can extract both red light and infrared light with high efficiency.

[0701] (Reference example) Specifically, the bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-2-benzo[g]quinoxalinyl-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedione-κ 2 A method for synthesizing iridium (III) (abbreviated as [Ir(dmdpbq)2(dpm)]) with iridium (III) (O,O') The structure of [Ir(dmdpbq)2(dpm)] is shown below.

[0702] [Chemical formula 4]

[0703] <Step 1: Synthesis of 2,3-bis(3,5-dimethylphenyl)-2-benzo[g]quinoxaline (abbreviation: Hdmdpbq)> First, in step 1, Hdmdpbq is synthesized. 3.20 g of 3,3',5,5'-tetramethylbenzil, 1.97 g of 2,3-diaminonaphthalene and 60 mL of ethanol are placed in a three-necked flask with a reflux tube, the atmosphere in the flask is replaced with nitrogen, and then stirred at 90°C for 7 hours. After the specified time, the solvent is removed. Then, the product is purified by silica gel column chromatography using toluene as the developing solvent to obtain the target product (yellow solid, yield 3.73 g, yield 79%). The synthesis scheme of step 1 is shown below (a-1).

[0704] [Chemical formula 5]

[0705] The following shows the nuclear magnetic resonance spectroscopy of the yellow solid obtained by step 1 ( 1 H-NMR) analysis results. According to the analysis results, Hdmdpbq was obtained.

[0706] The obtained substance 1 The HNMR data are as follows: 1 H-NMR. δ (CD2Cl2): 2.28 (s, 12H), 7.01 (s, 2H), 7.16 (s, 4H), 7.56-7.58 (m, 2H), 8.11-8.13 (m, 2H), 8.74 (s, 2H).

[0707] <Step 2: Synthesis of di-μ-chloro-tetrakis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-2-benzo[g]quinoxalinyl-κN]phenyl-κC}diiridium(III) (abbreviation: [Ir(dmdpbq)2Cl]2)> Next, in step 2, [Ir(dmdpbq)2Cl]2 is synthesized. 15 mL of 2-ethoxyethanol, 5 mL of water, 1.81 g of Hdmdpbq obtained in step 1, and 0.66 g of iridium chloride hydrate (IrCl3·H2O) (manufactured by Furuya Metal Co., Ltd., Japan) are placed in an eggplant-shaped flask with a reflux tube, and the atmosphere in the flask is replaced with nitrogen. Then, microwaves (2.45 GHz, 100 W) are irradiated for 2 hours to react. After the specified time, the obtained residue is filtered and washed with methanol to obtain the target product (black solid, yield is 1.76 g, yield is 81%). The synthesis scheme of step 2 is shown below (a-2).

[0708] [Chemical formula 6]

[0709] <Step 3: Synthesis of [Ir(dmdpbq)2(dpm)]> Next, in step 3, [Ir(dmdpbq)2(dpm)] is synthesized. 20 mL of 2-ethoxyethanol, 1.75 g of [Ir(dmdpbq)2Cl]2 obtained in step 2, 0.50 g of di-tert-valeryl methane (abbreviated as: Hdpm) and 0.95 g of sodium carbonate are placed in an eggplant-shaped flask equipped with a reflux tube, and the atmosphere in the flask is replaced with argon. Then, microwaves (2.45 GHz, 100 W) are irradiated for 3 hours. The obtained residue is filtered with methanol, and then washed with water and methanol. The obtained solid is purified by silica gel column chromatography with dichloromethane as the developing solvent, and then recrystallized using a mixed solvent of dichloromethane and methanol to obtain the target product (dark green solid, yield 0.42 g, yield 21%). The obtained 0.41 g dark green solid is sublimated and purified by gradient sublimation method. During the sublimation purification, the dark green solid was heated at 300° C. under the conditions of a pressure of 2.7 Pa and an argon gas flow rate of 10.5 mL / min. After the sublimation purification, a dark green solid was obtained at a yield of 78%. The synthesis scheme of step 3 is shown below (a-3).

[0710] [Chemical formula 7]

[0711] The NMR spectra of the dark green solid obtained by step 3 are shown below ( 1 According to the analysis results, [Ir(dmdpbq)2(dpm)] was obtained.

[0712] 1 H-NMR.δ(CD2Cl2): 0.75(s, 18H), 0.97(s, 6H), 2.01(s, 6H), 2.52(s, 12H), 4.86(s, 1H), 6.39(s, 2H), 7.15 (s, 2H), 7.31 (s, 2H), 7.44-7.51 (m, 4H), 7.80 (d, 2H), 7.86 (s, 4H), 8.04 (d, 2H), 8.42 (s, 2H), 8.58 (s, 2H). [Explanation of symbols]

[0713] C1: capacitor, C2: capacitor, M1: transistor, M2: transistor, M3: transistor, M4: transistor, M5: transistor, M6: transistor, M7: transistor, OUT1: wiring, OUT2: wiring, PIX1: pixel circuit, PIX2: pixel circuit, V1: wiring, V2: wiring, V3: wiring, V4: wiring, V5: wiring, 10A: display device, 10B: display device, 10C: display device, 10D: display device, 10E: display device, 10F: display device, 21B: light, 21G: light, 21N: infrared light, 22: light, 23a: light, 23b: reflected light, 30A: light-emitting device, 30B: light-emitting device, 30C: light-emitting device , 30D: light-emitting device, 30E: light-emitting device, 30F: light-emitting device, 40A: light-emitting device, 40B: light-emitting device, 40C: light-emitting device, 40D: light-emitting device, 40E: light-emitting device, 40F: light-emitting device, 40G: light-emitting device, 40H: light-emitting device, 41: transistor, 42: transistor, 45: layer having transistor, 47B: light-emitting device, 47G: light-emitting device, 47N: light-emitting device, 47R: light-emitting device, 50A: display device, 50B: display device, 52: finger, 53: layer having light-receiving device, 55: layer having transistor, 57: layer having light-emitting device, 100A: display device, 100B: display device, 100C: display device , 100D: display device, 110: light receiving device, 112: common layer, 114: common layer, 115: common electrode, 116: buffer layer, 141a: filter, 141b: filter, 142: adhesive layer, 143: space, 148a: coloring layer, 149: lens, 151: substrate, 152: substrate, 153: substrate, 154: substrate, 155: adhesive layer, 162: display unit, 163: light emitting unit, 164: circuit, 165: wiring, 166: conductive layer, 172: FPC, 173: IC, 181: pixel electrode, 182: buffer layer, 183: active layer, 184: buffer layer, 190: light emitting device, 190B: light emitting device, 190G: Light-emitting device, 191: pixel electrode, 191B: pixel electrode, 191G: pixel electrode, 192: buffer layer, 192B: buffer layer, 192G: buffer layer, 192R: buffer layer, 193: light-emitting layer, 193B: light-emitting layer, 193G: light-emitting layer, 193N: light-emitting layer, 193R: light-emitting layer, 194: buffer layer, 194B: buffer layer, 194G: buffer layer, 194R: buffer layer, 195: protective layer, 195a: inorganic insulating layer, 195b: organic insulating layer, 195c: inorganic insulating layer, 198: intermediate layer, 200A: light-emitting device, 200B: light-emitting device, 201: transistor, 202: transistor, 204: connecting portion, 205: transistor,206: transistor, 207: transistor, 208: transistor, 209: transistor, 210: transistor, 211: insulating layer, 212: insulating layer, 213: insulating layer, 214: insulating layer, 215: insulating layer, 216: partition wall, 217: partition wall, 218: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 225: insulating layer, 228: region, 231: semiconductor layer, 231i: channel shape region, 231n: low resistance region, 242: connection layer, 6500: electronic device, 6501: housing, 6502: display unit, 6503: power button, 6504: button, 6505: speaker, 6506: microphone, 6507: camera, 6508: light source, 6510: protection member, 6511: display panel, 6512: optical member, 6513: touch sensor panel, 6515: FPC, 6516: IC, 6517: printed circuit board, 6518: battery, 7000: display unit, 7100: television device, 7101: housing, 7103: bracket, 7111: remote control unit, 7200: notebook personal computer, 7211: housing, 7212: keyboard, 7213: pointing device, 7214: external connection port, 7300: digital signage, 7301: housing, 7303: speaker, 7311: information terminal device, 7400: digital signage, 7401: pillar, 7411 : Information terminal device, 9000: Housing, 9001: Display unit, 9003: Speaker, 9005: Operation key, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9200: Portable information terminal, 9201: Portable information terminal. ,

Claims

1. A light emitting device, comprising: a first light emitting device; as well as a second light emitting device, The first light emitting device includes a first pixel electrode, a first light emitting layer, a second light emitting layer and a common electrode. The first light-emitting layer and the second light-emitting layer are respectively located between the first pixel electrode and the common electrode. The second light emitting device includes a second pixel electrode, a third light emitting layer and the common electrode, The third light emitting layer is located between the second pixel electrode and the common electrode. The first light-emitting layer comprises a light-emitting material that emits infrared light, Furthermore, the second light-emitting layer and the third light-emitting layer each include a light-emitting material that emits visible light having wavelengths different from each other.

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