Diamond wire bus and diamond wire

Abstract

The invention provides a diamond wire bus and a diamond wire, the diamond wire bus comprises a base body and a coating layer covering at least part of the surface of the base body, the coating layer comprises a first metal layer, and the first metal layer covers at least part of the surface of the base body; the second metal layer covers at least part of the surface, far away from the substrate, of the first metal layer; the third metal layer covers at least part of the surface, far away from the first metal layer, of the second metal layer; wherein the first metal layer comprises first metal, the second metal layer comprises second metal, and the third metal layer comprises third metal and fourth metal; the content of third metal in the third metal layer increases progressively in the direction away from the second metal layer; the fourth metal and the second metal are the same metal. The outer surface of the third metal layer can keep sufficient strength and cannot fall off while achieving a lubricating effect, and the inner surface of the third metal layer is combined with the second metal layer, so that the cutting process of hard and brittle materials can be continuously carried out, and the cutting yield is improved.

Description

Technical Field

[0001] The present application belongs to the field of diamond wire technology, and specifically relates to a diamond wire busbar and a diamond wire. Background Art

[0002] Diamond wire cutting technology is gradually replacing traditional internal circular saw and mortar cutting technology in the cutting of hard and brittle materials such as semiconductor silicon wafers and sapphires, becoming the mainstream cutting process due to its advantages of high chip yield, high cutting efficiency, low material loss and low environmental pollution. Compared with diamond wire with high carbon steel wire as the core wire, diamond wire with tungsten wire as the core wire can avoid problems such as wire breakage caused by excessive temperature during cutting due to the extremely high melting point of tungsten wire, and the strength is also greatly improved.

[0003] However, since the surface of the diamond wire and the diamond wire busbar with tungsten wire as the core wire is usually coated, the poor bonding strength between the coatings leads to a high wire breakage rate problem during the wire drawing and cutting process.

[0004] How to design a diamond wire busbar and diamond wire with tungsten wire as the core wire so that they can have a good yield rate in the cutting process is a technical problem that needs to be solved at present. Summary of the invention

[0005] The present application provides a diamond wire busbar and a diamond wire, aiming to solve the problem of a high wire breakage rate of the existing tungsten wire diamond wire busbar during the cutting process.

[0006] The first embodiment of the present application provides a diamond wire busbar, comprising a substrate and a coating layer covering at least a portion of the surface of the substrate, wherein the coating layer comprises:

[0007] A first metal layer, the first metal layer is coated on at least a portion of the surface of the substrate;

[0008] a second metal layer, the second metal layer covering at least a portion of a surface of the first metal layer away from the substrate;

[0009] a third metal layer, the third metal layer covering at least a portion of a surface of the second metal layer away from the first metal layer;

[0010] Wherein, the first metal layer includes a first metal, the second metal layer includes a second metal, and the third metal layer includes a third metal and a fourth metal;

[0011] The content of the third metal in the third metal layer increases gradually in a direction away from the second metal layer; the fourth metal and the second metal are the same metal.

[0012] In some embodiments, along the radial direction of the diamond wire busbar, the substrate has a maximum size D μm, and the coating layer has a first size L1 μm, satisfying:

[0013] D = a·L1;

[0014] Wherein, a is the first thickness coefficient, satisfying 30≤a≤105.

[0015] In some embodiments, the first size L1 satisfies: 0.25≤L1≤1.2.

[0016] In some embodiments, the maximum dimension Dμm satisfies: 16≤D≤50.

[0017] In some embodiments, along the radial direction of the diamond wire busbar, the first metal layer has a second size L2 μm, the second metal layer has a third size L3 μm, and the third metal layer has a fourth size L4 μm, satisfying at least one of the following conditions:

[0018] i) L3 = b·L2;

[0019] ii) L3 = c·L4;

[0020] Wherein, b is the second thickness coefficient, satisfying 5≤b≤15, and c is the third thickness coefficient, satisfying 2≤c≤8.

[0021] In some embodiments, the second size L2 μm satisfies: 0.01≤L2≤0.12.

[0022] In some embodiments, the third size L3 μm satisfies: 0.01≤L3≤2.

[0023] In some embodiments, the fourth size L4 μm satisfies: 0.01≤L4≤1.

[0024] In some embodiments, the mass percentage of the first metal in the first metal layer is 95% to 100%.

[0025] In some embodiments, the mass percentage of the second metal in the second metal layer is 95% to 100%.

[0026] In some embodiments, the mass percentage of the third metal in the third metal layer close to the second metal layer is 5-10%.

[0027] In some embodiments, the mass percentage of the third metal on a side of the third metal layer away from the second metal layer is 30-35%.

[0028] In some embodiments, the first metal includes nickel.

[0029] In some embodiments, the second metal includes copper.

[0030] In some embodiments, the third metal includes at least one of zinc, nickel, and tin.

[0031] In some embodiments, the fourth metal includes copper.

[0032] The second embodiment of the present application provides a method for preparing a diamond wire busbar, comprising the following steps:

[0033] providing a substrate;

[0034] forming a first metal layer on at least a portion of the surface of the substrate;

[0035] forming a second metal layer on at least a portion of the surface of the first metal layer away from the substrate;

[0036] forming a third metal layer on at least a portion of the surface of the second metal layer on a side away from the first metal layer to obtain an intermediate product;

[0037] The intermediate product is drawn to obtain the diamond wire busbar.

[0038] In some embodiments, the step of providing a substrate further includes: making the substrate have a first diameter D1 μm;

[0039] The step of forming a first metal layer on at least a portion of the surface of the substrate further includes: making the first metal layer have a first thickness T1 μm;

[0040] The step of forming a second metal layer on at least a portion of the surface of the first metal layer away from the substrate further comprises: making the second metal layer have a second thickness T2 μm;

[0041] The step of forming a third metal layer on at least a portion of the surface of the second metal layer away from the first metal layer further comprises: making the third metal layer have a third thickness T3 μm;

[0042] The step of drawing the intermediate product further includes: making the substrate have a second diameter D2 μm, the first metal layer have a fourth thickness T4 μm, the second metal layer have a fifth thickness T5 μm, and the third metal layer have a sixth thickness T6 μm;

[0043] Among them, D1<D2, T1<T4, T2<T5, T3<T6.

[0044] In some embodiments, the first thickness T1 μm and the fourth thickness T4 μm satisfy: T1=(1.5-2.5)T4.

[0045] In some embodiments, the second thickness T2 μm and the fifth thickness T5 μm satisfy: T2=(1.8-2)T5.

[0046] In some embodiments, the third thickness T3 μm and the sixth thickness T6 μm satisfy: T3=(2-3)T6.

[0047] In some embodiments, the first diameter D1 μm satisfies: 50≤D1≤100.

[0048] In some embodiments, the second diameter D2 μm satisfies: 10≤D2≤100.

[0049] In some embodiments, the first thickness T1 μm satisfies: 0.02≤T1≤0.25.

[0050] In some embodiments, the second thickness T2 μm satisfies: 0.2≤T2≤1.5.

[0051] In some embodiments, the third thickness T3 μm satisfies: 0.1≤T3≤0.6.

[0052] In some embodiments, the fourth thickness T4 μm satisfies: 0.01≤T4≤0.12.

[0053] In some embodiments, the fifth thickness T5 μm satisfies: 0.01≤T5≤0.8.

[0054] In some embodiments, the sixth thickness T6 μm satisfies: 0.03≤T6≤0.3.

[0055] The third embodiment of the present application provides a diamond wire, comprising the diamond wire mother bar, a grinding layer and first particles in any of the above embodiments, wherein the grinding layer covers at least a portion of the surface of the diamond wire mother bar, the first particles are dispersed in the grinding layer, and at least a portion of the first particles protrude from the grinding layer.

[0056] In some embodiments, second particles are dispersed in the grinding layer; and the second particles are arranged between the adjacent first particles.

[0057] In some embodiments, the grinding layer has a thickness of 0.1 μm to 100 μm.

[0058] In some embodiments, the average particle size of the first particles is 10 μm to 100 μm.

[0059] In some embodiments, the average particle size of the second particles is 2 μm to 10 μm.

[0060] In some embodiments, a fourth metal layer is disposed between the diamond wire busbar and the grinding layer; the fourth metal layer includes metal nickel.

[0061] The present application provides a diamond wire busbar, comprising a substrate and a coating layer covering at least a portion of the surface of the substrate, wherein the coating layer comprises: a first metal layer, the first metal layer covering at least a portion of the surface of the substrate; a second metal layer, the second metal layer covering at least a portion of the surface of the first metal layer away from the substrate; a third metal layer, the third metal layer covering at least a portion of the surface of the second metal layer away from the first metal layer; wherein the first metal layer comprises a first metal, the second metal layer comprises a second metal, and the third metal layer comprises a third metal and a fourth metal; the third metal content in the third metal layer increases in a direction away from the second metal layer; and the fourth metal and the second metal are the same metal. In the diamond wire busbar provided by the present application, the first metal layer can improve the bonding force between the second metal layer and the substrate; the second metal layer is located between the first metal layer and the third metal layer, and can play a role in lubrication and coordination of substrate deformation during the drawing process and the cutting process; the outer surface of the third metal layer is an alloy material formed by a mixture of the third metal and the fourth metal, which has a high hardness and can maintain sufficient strength without falling off while playing a lubricating effect; the inner surface has a low third metal content, and the material has physical and chemical properties similar to those of the second metal layer, and can be just combined with the second metal layer, so that the drawing process of the diamond wire or the diamond wire busbar and the subsequent cutting process can be carried out continuously, thereby reducing the wire breakage rate of the diamond wire busbar in the drawing process and the cutting process, and obtaining a finished product diameter with better consistency, thereby improving the cutting yield rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0062] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0063] Figure 1 A schematic diagram of the main cross-sectional structure of a diamond wire busbar provided in an embodiment of the present application;

[0064] Figure 2 for Figure 1 The schematic diagram of the side cross-section structure of the middle diamond wire busbar;

[0065] Figure 3 A schematic diagram of the main cross-sectional structure before drawing in a method for preparing a diamond wire busbar provided in an embodiment of the present application;

[0066] Figure 4 A schematic diagram of the main cross-sectional structure of a diamond wire busbar after drawing in a method for preparing the diamond wire busbar provided in an embodiment of the present application;

[0067] Figure 5 A schematic diagram of a main cross-sectional structure of a diamond wire provided in an embodiment of the present application;

[0068] Figure 6 for Figure 5 A schematic diagram of the side cross-sectional structure of the diamond wire;

[0069] Reference numerals:

[0070] 100 - substrate, 200 - coating layer, 201 - first metal layer, 202 - second metal layer, 203 - third metal layer, 300 - grinding layer, 301 - first particles, 302 - second particles, 400 - fourth metal layer. DETAILED DESCRIPTION

[0071] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0072] In the description of the present application, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or can communicate with each other; it can be directly connected, or indirectly connected through an intermediate medium, or indirectly connected through a pipe or pipeline, and it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" can explicitly or implicitly include one or more features.

[0073] See also Figure 1 and Figure 2 The first embodiment of the present application provides a diamond wire busbar, comprising a substrate 100 and a coating layer 200 covering at least a portion of the surface of the substrate 100, wherein the coating layer 200 comprises:

[0074] A first metal layer 201, the first metal layer 201 covers at least a portion of the surface of the substrate 100;

[0075] A second metal layer 202, the second metal layer 202 covers at least a portion of the surface of the first metal layer 201 away from the substrate 100;

[0076] A third metal layer 203, the third metal layer 203 covers at least a portion of the surface of the second metal layer 202 away from the first metal layer 201;

[0077] The first metal layer 201 includes a first metal, the second metal layer 202 includes a second metal, and the third metal layer 203 includes a third metal and a fourth metal;

[0078] The content of the third metal in the third metal layer 203 increases gradually in a direction away from the second metal layer 202 ; the fourth metal and the second metal are the same metal.

[0079] In the diamond wire busbar provided in the present application, the first metal layer 201 can improve the bonding force between the second metal layer 202 and the substrate 100; the second metal layer 202 is located between the first metal layer 201 and the third metal layer 203, and can play a role in lubrication and coordination of deformation of the substrate 100 in subsequent drawing and cutting processes; the outer surface of the third metal layer 203 is an alloy material formed by a mixture of the third metal and the fourth metal, which has a high hardness and can maintain sufficient strength without falling off while playing a lubricating effect. The third metal content on the inner surface is relatively low, and the physical and chemical properties of the material are similar to those of the second metal layer 202, and can be just combined with the second metal layer 202, so that the process of drawing the diamond wire or the diamond wire busbar and the subsequent cutting process can be carried out continuously, thereby reducing the wire breakage rate of the diamond wire busbar in the drawing and cutting processes, and obtaining a finished product diameter with good consistency, thereby improving the cutting yield rate.

[0080] In some embodiments, Figure 1 As shown, along the radial direction of the diamond wire generatrix (ie, the first direction X), the substrate 100 has a maximum size Dμm, and the coating layer 200 has a first size L1μm, satisfying:

[0081] D = a·L1;

[0082] Wherein, a is the first thickness coefficient, satisfying 30≤a≤105.

[0083] It is understandable that the value of the first thickness coefficient a can be any value among 30, 40, 50, 60, 70, 80, 90, 100, 105 or a range between any two values. The coating layer 200 covers the substrate 100, which can make the diamond wire busbar have good ductility in the subsequent process of preparing the diamond wire and also have good cutting force after forming the final diamond wire; in addition, by limiting the size ratio of the coating layer 200 and the substrate 100, it can ensure that the diamond wire busbar has an ideal strength and has good diameter consistency after the subsequent electroplating process and cold drawing process.

[0084] In some embodiments, the first size L1 satisfies: 0.25≤L1≤1.2.

[0085] It is understandable that the value of the first dimension L1 (unit: μm) can be any value among 0.25, 0.5, 0.75, 1.0, 1.2 or a range between any two values. When the first dimension L1 meets the above value range, it can further ensure that the diamond wire busbar has good ductility and has a relatively ideal strength as a whole.

[0086] In some embodiments, the maximum dimension Dμm satisfies: 16≤D≤50.

[0087] Generally, the diamond wire mother wire and the radial section of the diamond wire can be circular or elliptical, preferably circular. Figure 1 , when the radial section of the substrate 100 is circular, the maximum dimension D is the diameter of the radial section of the substrate 100. It can be understood that the value of the maximum dimension D (unit: μm) can be any value among 16, 20, 25, 30, 35, 40, 45, 50 or a range between any two values; further, the value of the maximum dimension D (unit: μm) can be any value among 24, 28, 32, 36, 40 or a range between any two values.

[0088] In some embodiments, along the radial direction of the diamond wire busbar, the first metal layer has a second size L2 μm, the second metal layer has a third size L3 μm, and the third metal layer has a fourth size L4 μm, satisfying at least one of the following conditions:

[0089] i) L3 = b·L2;

[0090] ii) L3 = c·L4;

[0091] Wherein, b is the second thickness coefficient, satisfying 5≤b≤15, and c is the third thickness coefficient, satisfying 2≤c≤8.

[0092] It can be understood that the value of the second thickness coefficient b can be any value among 5, 7, 9, 11, 13, 15 or a range between any two values. When the second thickness coefficient b, that is, the ratio of the third dimension L3 to the second dimension L2, satisfies the above value range, the diamond wire busbar can have good ductility and have a relatively ideal strength as a whole. The value of the third thickness coefficient c can be any value among 2, 3, 4, 5, 6, 7, 8 or a range between any two values. When the third thickness coefficient c, that is, the ratio of the third dimension L3 to the fourth dimension L4, satisfies the above value range, it can ensure that the outer surface of the diamond wire busbar has an ideal hardness and has a relatively ideal strength as a whole.

[0093] In some embodiments, the second size L2 μm satisfies: 0.01≤L2≤0.12, and more preferably 0.02≤L1≤0.08.

[0094] It can be understood that the value of the second dimension L2 (unit: μm) can be any value among 0.01, 0.03, 0.05, 0.07, 0.09, 0.11, 0.12 or a range between any two values; further, the value of the second dimension L2 (unit: μm) can be any value among 0.02, 0.04, 0.06, 0.08 or a range between any two values.

[0095] In some embodiments, the third dimension L3 μm satisfies: 0.01≤L3≤2, and more preferably 0.2≤L3≤0.4.

[0096] It can be understood that the value of the third dimension L3 (unit: μm) can be any value among 0.01, 0.05, 0.1, 0.5, 0.7, 0.9, 1.1, 1.3, 1.5, 1.7, 2, or a range between any two values; further, the value of the third dimension L3 (unit: μm) can be any value among 0.2, 0.25, 0.3, 0.35, 0.4, or a range between any two values.

[0097] In some embodiments, the fourth dimension L4 μm satisfies: 0.01≤L4≤1, and more preferably 0.15≤L4≤0.3.

[0098] It can be understood that the value of the fourth dimension L4 (unit: μm) can be any value among 0.01, 0.05, 0.1, 0.5, 0.7, 0.9, 1, or a range between any two values; further, the value of the fourth dimension L4 (unit: μm) can be any value among 0.15, 0.18, 0.21, 0.24, 0.27, 0.3, or a range between any two values.

[0099] When the maximum dimension D, the second dimension L2, the third dimension L3, and the fourth dimension L4 of the base 100 meet the above value ranges, it can ensure that the diamond wire busbar achieves a balance in terms of overall strength and cold-drawing coordination.

[0100] In some embodiments, the mass percentage of the first metal in the first metal layer 201 is 95% to 100%.

[0101] It can be understood that the mass percentage of the first metal in the first metal layer 201 can be any value of 95%, 96%, 97%, 98%, 99%, 100%, or a range between any two values.

[0102] In some embodiments, the mass percentage of the second metal in the second metal layer 202 is 95% to 100%.

[0103] It can be understood that the mass percentage of the second metal in the second metal layer 202 can be any value among 95%, 96%, 97%, 98%, 99%, 100%, or a range between any two values.

[0104] In some embodiments, the mass percentage of the third metal in the third metal layer 203 close to the second metal layer 202 is 5-10%.

[0105] It is understandable that the mass percentage of the third metal on the side close to the second metal layer 202 in the third metal layer 203 can be any value among 5%, 6%, 7%, 8%, 9%, 10%, or a range between any two values. When the mass percentage of the third metal on the side close to the second metal layer 202 in the third metal layer 203 satisfies the above value range, the physicochemical properties of the side close to the second metal layer 202 of the third metal layer 203 can be further made sufficiently close to those of the second metal layer 202, thereby ensuring that the third metal layer 203 and the second metal layer 202 have good bonding strength.

[0106] In some embodiments, the mass percentage of the third metal on the side of the third metal layer 203 away from the second metal layer is 30-35%.

[0107] It is understandable that the mass percentage of the third metal on the side away from the second metal layer 202 in the third metal layer 203 can be any value of 30%, 31%, 32%, 33%, 34%, 35%, or a range between any two values. When the mass percentage of the third metal on the side away from the second metal layer 202 in the third metal layer 203 meets the above value range, the outer surface of the entire coating layer 200 has an ideal alloy strength, avoiding the problem of falling off or deformation in subsequent processes.

[0108] In some embodiments, the first metal includes nickel.

[0109] In some embodiments, the second metal includes copper.

[0110] In some embodiments, the third metal includes at least one of zinc, nickel, and tin.

[0111] In some embodiments, the fourth metal includes copper.

[0112] The second embodiment of the present application provides a method for preparing a diamond wire busbar, comprising the following steps:

[0113] Providing a substrate 100;

[0114] Forming a first metal layer 201 on at least a portion of the surface of the substrate 100;

[0115] Forming a second metal layer 202 on at least a portion of the surface of the first metal layer 201 away from the substrate 100;

[0116] forming a third metal layer 203 on at least a portion of the surface of the second metal layer 202 away from the first metal layer 201 to obtain an intermediate product;

[0117] The intermediate product is drawn to obtain a diamond wire busbar.

[0118] In some embodiments, the step of providing the substrate 100 further includes: making the substrate 100 have a first diameter D1 μm;

[0119] The step of forming the first metal layer 201 on at least part of the surface of the substrate 100 further includes: making the first metal layer 201 have a first thickness T1 μm;

[0120] The step of forming a second metal layer 202 on at least a portion of the surface of the first metal layer 201 away from the substrate also includes: making the second metal layer 202 have a second thickness T2 μm;

[0121] The step of forming a third metal layer 203 on at least a portion of the surface of the second metal layer 202 away from the first metal layer 201 further includes: making the third metal layer 203 have a third thickness T3 μm;

[0122] The step of drawing the intermediate product further includes: making the substrate 100 have a second diameter D2 μm, the first metal layer 201 have a fourth thickness T4 μm, the second metal layer 202 have a fifth thickness T5 μm, and the third metal layer 203 have a sixth thickness T6 μm;

[0123] Among them, D1<D2, T1<T4, T2<T5, T3<T6.

[0124] In some embodiments, the first thickness T1 μm and the fourth thickness T4 μm satisfy: T1=(1.5-2.5)T4.

[0125] In some embodiments, the second thickness T2 μm and the fifth thickness T5 μm satisfy: T2=(1.8-2)T5.

[0126] In some embodiments, the third thickness T3 μm and the sixth thickness T6 μm satisfy: T3=(2-3)T6.

[0127] When the thicknesses of the first metal layer 201, the second metal layer 202 and the third metal layer 203 satisfy the above value relationship before and after drawing, the drawing process of the diamond wire busbar has a higher drawing efficiency and can avoid wire breakage or uneven thickness problems during the drawing process.

[0128] In some embodiments, the first diameter D1 μm satisfies: 50≤D1≤100.

[0129] It can be understood that the value of the first diameter D1 (unit: μm) can be any value among 50, 60, 70, 80, 90, 100 or a range between any two values.

[0130] In some embodiments, the second diameter D2 μm satisfies: 16≤D2≤50.

[0131] It can be understood that the value of the second diameter D2 (unit: μm) can be any value among 16, 20, 25, 30, 35, 40, 45, 50 or a range between any two values.

[0132] In some embodiments, the first thickness T1 μm satisfies: 0.02≤T1≤0.25.

[0133] It can be understood that the value of the first thickness T1 (unit: μm) can be any value among 0.02, 0.05, 0.1, 0.15, 0.2, 0.25 or a range between any two values.

[0134] In some embodiments, the second thickness T2 μm satisfies: 0.2≤T2≤1.5.

[0135] It can be understood that the value of the second thickness T2 (unit: μm) can be any value among 0.2, 0.7, 1.0, 1.2, 1.5, or a range between any two values.

[0136] In some embodiments, the third thickness T3 μm satisfies: 0.1≤T3≤0.6.

[0137] It can be understood that the value of the third thickness T3 (unit: μm) can be any value among 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, or a range between any two values.

[0138] In some embodiments, the fourth thickness T4 μm satisfies: 0.01≤T4≤0.12.

[0139] It can be understood that the value of the fourth thickness T4 (unit: μm) can be any value among 0.01, 0.03, 0.05, 0.07, 0.09, 0.12, or a range between any two values.

[0140] In some embodiments, the fifth thickness T5 μm satisfies: 0.1≤T5≤0.8.

[0141] It can be understood that the value of the fifth thickness T5 (unit: μm) can be any value among 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8 or a range between any two values.

[0142] In some embodiments, the sixth thickness T6 μm satisfies: 0.03≤T6≤0.3.

[0143] It can be understood that the value of the sixth thickness T6 (unit: μm) can be any value among 0.03, 0.1, 0.15, 0.2, 0.25, 0.3, or a range between any two values.

[0144] When the first thickness T1, the second thickness T2, the third thickness T3, the fourth thickness T4, the fifth thickness T5 and the sixth thickness T6 meet the above value range, it can further ensure that the drawing process of the diamond wire busbar has a high drawing efficiency and avoid wire breakage or uneven thickness problems during the drawing process.

[0145] The third embodiment of the present application provides a diamond wire, see Figure 3 and Figure 4 , including the diamond wire busbar and grinding layer 300 and first particles 301 in any of the above embodiments, the grinding layer 300 is coated on at least part of the surface of the diamond wire busbar, the first particles 301 are dispersed in the grinding layer 300, and at least part of the first particles 301 protrude from the grinding layer 300, so as to assist the grinding layer 300 in cutting silicon wafers etc. in the subsequent cutting process.

[0146] In some embodiments, second particles 302 are dispersed in the grinding layer 300 ; the second particles 302 are disposed between adjacent first particles 301 .

[0147] In some embodiments, second particles 302 are dispersed in the grinding layer 300 ; the average particle size of the second particles is 2 μm to 10 μm.

[0148] It is understandable that the average particle size of the second particles 302 (unit: μm) can be any value of 2, 3, 4, 5, 6, 7, 8, 9, 10 or a range between any two values. When the average particle size of the second particles 302 meets the above value range, the second particles 302 can be evenly dispersed in the grinding layer 300, which increases the hardness of the grinding layer 300 and increases the bonding ability of the grinding layer 300 with the diamond wire busbar or the fourth metal layer 400, thereby increasing the service life and cutting efficiency of the diamond wire.

[0149] In some embodiments, the thickness of the grinding layer 300 is 0.1 μm to 100 μm.

[0150] It is understandable that the thickness of the grinding layer 300 (unit: μm) can be any value among 0.1, 1, 5, 10, 20, 50, 80, 100 or a range between any two values. When the thickness of the grinding layer 300 meets the above value range, it can avoid the problem that the grinding layer 300 is too low in thickness, which leads to a weakening of its consolidation effect on the first particles 301, a high shedding rate of the first particles 301 during the cutting process of the diamond wire, and a decrease in cutting ability. At the same time, if the grinding layer 300 is too thick, it will lead to a low grinding rate of the first particles 301, which will reduce the cutting ability of the diamond wire.

[0151] In some embodiments, the average particle size of the first particles 301 is 10 μm to 100 μm.

[0152] The first particles 301 are irregular in shape. It can be understood that the average particle size of the first particles 301 (unit: μm) can be any value of 10, 20, 30, 40, 50, 60, 70, 80, 90, 100 or a range between any two values.

[0153] See also Figure 5 and Figure 6 In some embodiments, a fourth metal layer 400 is provided between the diamond wire busbar and the grinding layer 300 to further enhance the bonding force between the diamond wire busbar and the grinding layer 300; the fourth metal layer 400 includes metal nickel. It can be understood that the fourth metal layer 400 can be a pure metal nickel layer or a nickel alloy containing a small amount of iron or cobalt.

[0154] It is understandable that the tungsten wire mentioned in the present application is a metal wire with a tungsten mass content greater than or equal to 95%, the metal copper layer is a metal wire with a copper mass content greater than or equal to 95%, and the metal nickel layer is a metal wire with a nickel mass content greater than or equal to 95%; the raw materials of the alloy layers such as the copper-zinc alloy layer, copper-tin alloy layer, copper-zinc-tin alloy layer, copper-zinc-nickel alloy layer, nickel-cobalt alloy layer and nickel-iron alloy layer mentioned in the present application can be obtained from the market, or prepared by thermal diffusion. Taking the copper-zinc alloy layer as an example, preparing the copper-zinc alloy layer by thermal diffusion may include the following steps:

[0155] S1. electroplating a metal zinc layer on the surface of the metal copper layer;

[0156] S2. Heating the composite metal layer to diffuse the metal zinc into the metal copper layer to obtain a copper-zinc alloy layer.

[0157] The following is a description of the diamond wire busbar and diamond wire provided by the present application in conjunction with specific embodiments:

[0158] Example 1

[0159] This embodiment 1 provides a diamond wire busbar, see Figure 1 and Figure 2 , including a substrate 100 and a coating layer 200 coated on the surface of the substrate 100. Along the direction away from the substrate 100, the coating layer 200 includes a first metal layer 201, a second metal layer 202 and a third metal layer 203 stacked in sequence.

[0160] The substrate 100 is made of pure tungsten wire with a diameter of 60 μm; the first metal layer 201 is made of nickel with a thickness of 0.05 μm; the second metal layer 202 is made of pure copper with a thickness of 0.45 μm; and the third metal layer 203 is made of copper-zinc alloy with a thickness of 0.4 μm.

[0161] The diamond wire busbar provided in this embodiment is prepared by the following steps:

[0162] (1) Pretreatment: The substrate 100 is subjected to alkali washing, first water washing, acid washing, and second water washing, wherein the cleaning solution for alkali washing (the solvent is water) is composed of: 30 g / L sodium hydroxide, 10 g / L sodium metasilicate, and 10 g / L sodium chloride, the alkali washing time is 50 s, the temperature is 55° C., and the ultrasonic frequency is 30 Hz; the first water washing: pure water with a pH of 6.2-6.5 and a conductivity of ≤2 us / cm is used; the cleaning solution for acid washing (the solvent is water) is composed of: 20 g / L hydrochloric acid, the acid washing time is 30 s, and the temperature is 25° C.; the second water washing: deionized water with a pH of 6.5-7.0 and a conductivity of ≤2.5 us / cm is used to obtain the cleaned substrate 100;

[0163] (2) First electroplating: The cleaned substrate 100 is placed in a first plating solution to deposit a nickel layer. The first plating solution includes the following components: 20-150 ml / L hydrochloric acid, 50-200 g / L nickel chloride, pH value 0.5-2.0, electroplating temperature 45-60°C, current density 20-40 A / dm 2 ;

[0164] (3) Second electroplating: The substrate 100 plated with the nickel layer is placed in a second plating solution to deposit a copper layer. The second plating solution includes the following components: 100-500 g / L potassium pyrophosphate, 10-100 g / L copper pyrophosphate, pH value 7.0-9.0, electroplating temperature 30-50°C, current density 1-20 A / dm 2 ;

[0165] (4) The third electroplating: the substrate 100 plated with the nickel layer and the copper layer is placed in a third plating solution to deposit a zinc layer to obtain a raw material busbar. The third plating solution includes the following components: 100-400 g / L zinc sulfate, pH value 1.0-3.0, electroplating temperature 35-55°C, current density 1-20 A / dm 2 ;

[0166] (5) Water washing and drying: The raw busbar prepared in the above steps is washed with pure water at a temperature of 50°C. The washed raw busbar is dried by a heating bellows for 5s to 30s at a temperature of ≤150°C.

[0167] (6) Thermal diffusion treatment: The raw busbar is placed in a heating furnace and heated at 400°C for 8 min to allow the zinc layer to be partially incorporated into the copper layer. After the heating is completed, the material is quickly cooled to room temperature to obtain a diamond wire busbar.

[0168] The fourth metal layer 400 and the grinding layer 300 are electroplated on the basis of the above-mentioned diamond wire busbar to form a diamond wire, see Figure 3 The fourth metal layer 400 covers the surface of the diamond wire busbar, the grinding layer 300 covers the surface of the fourth metal layer 400, the first particles 301 are distributed in the grinding layer 300, and the second particles 302 are dispersed in the grinding layer 300.

[0169] Embodiments 2 to 18

[0170] The diamond wire busbars and diamond wire structures provided in Examples 2 to 18 are consistent with those in Example 1, and the only difference is that the size parameters of the substrate 100 and the coating layer 200 are adjusted.

[0171] Comparative Examples 1 to 9

[0172] The diamond wire busbars and diamond wire structures provided in Comparative Examples 1 to 9 are consistent with those in Example 1, and the only difference is that the size parameters of the substrate 100 and the coating layer 200 are adjusted.

[0173] The values ​​of the relevant parameters of the diamond wire busbar in Examples 1 to 18 and Comparative Examples 1 to 9 are shown in Table 1.

[0174] Table 1

[0175]

[0176]

[0177] The diamond wires in Examples 1 to 18 and Comparative Examples 1 to 9 were subjected to strength tests using the following method:

[0178] Wire breakage rate test: Cut G12 size silicon wafers, set the cutting tension to 4.0N, set the cutting time to 100min and 120min respectively, and the number of cutting cuts to 200, and compare their wire breakage rates;

[0179] Yield test: The appearance of the cut silicon wafer is used as the judging standard. When there is no abnormality in the appearance of the silicon wafer, it is considered a qualified finished product.

[0180] The test results are shown in Table 2.

[0181] Table 2

[0182] Yield Disconnection rate Example 1 96.22％ 7.01％ Example 2 98.46％ 6.96％ Example 3 99.36％ 3.97％ Example 4 96.21％ 8.26％ Example 5 98.41％ 7.25％ Example 6 98.27％ 6.99％ Example 7 95.10％ 10.21％ Example 8 98.21％ 6.64％ Example 9 97.95％ 7.21％ Example 10 96.26％ 8.88％ Embodiment 11 95.42％ 7.39％ Example 12 97.54％ 4.69％ Example 13 98.20％ 3.98％ Embodiment 14 98.65％ 5.86％ Embodiment 15 97.69％ 6.69％ Example 16 96.46％ 8.41％ Embodiment 17 97.98％ 11.97％ Embodiment 18 94.20％ 8.91％ Comparative Example 1 92.25％ 14.92％ Comparative Example 2 82.56％ 18.71％ Comparative Example 3 84.86％ 9.69％ Comparative Example 4 93.23％ 15.45％ Comparative Example 5 94.17％ 16.69％ Comparative Example 6 93.56％ 15.62％ Comparative Example 7 94.41％ 12.89％ Comparative Example 8 91.56％ 17.45％ Comparative Example 9 91.56％ 22.26％

[0183] According to Table 2, it can be seen that the diamond wire and diamond wire busbar obtained using the solution provided in the present application have good strength performance. At the same time, in the process of cutting silicon wafers, due to the high uniformity of their diameters, the cut silicon wafers have a smooth appearance and the yield rate is significantly improved.

[0184] The diamond wire busbar and diamond wire provided in the embodiments of the present application are introduced in detail above. Specific examples are used in the present application to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application. Ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents. These modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A diamond wire busbar, characterized in that: The invention comprises a substrate (100) and a coating layer (200) coated on at least a part of the surface of the substrate (100), wherein the coating layer (200) comprises: A first metal layer (201), the first metal layer (201) being coated on at least a portion of the surface of the substrate (100); a second metal layer (202), the second metal layer (202) being coated on at least a portion of a surface of the first metal layer (201) away from the substrate (100); a third metal layer (203), the third metal layer (203) being coated on at least a portion of a surface of the second metal layer (202) away from the first metal layer (201); Wherein, the first metal layer (201) includes a first metal, the second metal layer (202) includes a second metal, and the third metal layer (203) includes a third metal and a fourth metal; The third metal content in the third metal layer (203) increases gradually in a direction away from the second metal layer (202); and the fourth metal and the second metal are the same metal.

2. A diamond wire busbar according to claim 1, characterized in that: Along the radial direction of the diamond wire busbar, the substrate (100) has a maximum size D μm, and the coating layer (200) has a first size L1 μm, satisfying: D = a·L1; Wherein, a is the first thickness coefficient, satisfying 30≤a≤105.

3. A diamond wire busbar according to claim 2, characterized in that: The first size L1 satisfies: 0.25≤L1≤1.2; and / or, The maximum size Dμm satisfies: 16≤D≤50.

4. A diamond wire busbar according to claim 1, characterized in that: Along the radial direction of the diamond wire busbar, the first metal layer (201) has a second size L2 μm, the second metal layer (202) has a third size L3 μm, and the third metal layer (203) has a fourth size L4 μm, satisfying at least one of the following conditions: i) L3 = b·L2; ii) L3 = c·L4; Wherein, b is the second thickness coefficient, satisfying 5≤b≤15, and c is the third thickness coefficient, satisfying 2≤c≤8.

5. A diamond wire busbar according to claim 4, characterized in that: The second size L2 μm satisfies: 0.01≤L2≤0.12; and / or, The third size L3 μm satisfies: 0.01≤L3≤2; and / or, The fourth size L4 μm satisfies: 0.01≤L4≤1.

6. The diamond wire busbar according to claim 1, characterized in that: The mass percentage of the first metal in the first metal layer (201) is 95% to 100%; and / or, The mass percentage of the second metal in the second metal layer (202) is 95% to 100%; and / or, The mass percentage of the third metal on the side of the third metal layer (203) close to the second metal layer (202) is 5 to 10%; and / or, The mass percentage of the third metal on the side of the third metal layer (203) away from the second metal layer (202) is 30-35%.

7. The diamond wire busbar according to claim 1, characterized in that: The first metal comprises nickel; and / or, The second metal comprises copper; and / or, The third metal comprises at least one of zinc, nickel and tin; and / or, The fourth metal includes copper.

8. A method for preparing a diamond wire busbar, characterized in that: The steps include: Providing a substrate (100); forming a first metal layer (201) on at least a portion of the surface of the substrate (100); forming a second metal layer (202) on at least a portion of the surface of the first metal layer (201) on a side away from the substrate (100); forming a third metal layer (203) on at least a portion of the surface of the second metal layer (202) on a side away from the first metal layer (201) to obtain an intermediate product; The intermediate product is drawn to obtain the diamond wire busbar.

9. The method for preparing a diamond wire busbar according to claim 8, characterized in that: The step of providing a substrate (100) comprises: making the substrate (100) have a first diameter D1 μm; The step of forming a first metal layer (201) on at least part of the surface of the substrate (100) further comprises: making the first metal layer (201) have a first thickness of T1 μm; The step of forming a second metal layer (202) on at least part of the surface of the first metal layer (201) on the side away from the substrate (100) also includes: making the second metal layer (202) have a second thickness of T2 μm; The step of forming a third metal layer (203) on at least part of the surface of the second metal layer (202) on a side away from the first metal layer (201), further comprising: making the third metal layer (203) have a third thickness of T3 μm; The step of drawing the intermediate product further includes: making the substrate (100) have a second diameter D2 μm, the first metal layer (201) have a fourth thickness T4 μm, the second metal layer (202) have a fifth thickness T5 μm, and the third metal layer (203) have a sixth thickness T6 μm; Among them, D1<D2, T1<T4, T2<T5, T3<T6.

10. The method for preparing a diamond wire busbar according to claim 9, characterized in that: The first thickness T1 μm and the fourth thickness T4 μm satisfy: T1=(1.5-2.5)T4; and / or, The second thickness T2 μm and the fifth thickness T5 μm satisfy: T2=(1.8-2)T5; and / or, The third thickness T3 μm and the sixth thickness T6 μm satisfy: T3=(2-3)T6.

11. The method for preparing a diamond wire busbar according to claim 9, characterized in that: The first diameter D1 μm satisfies: 50≤D1≤100; and / or, The second diameter D2 μm satisfies: 10≤D2≤100; and / or, The first thickness T1 μm satisfies: 0.02≤T1≤0.25; and / or, The second thickness T2 μm satisfies: 0.2≤T2≤1.5; and / or, The third thickness T3 μm satisfies: 0.1≤T3≤0.6; and / or, The fourth thickness T4 μm satisfies: 0.01≤T4≤0.12; and / or, The fifth thickness T5 μm satisfies: 0.1≤T5≤0.8; and / or, The sixth thickness T6 μm satisfies: 0.03≤T6≤0.

3.

12. A diamond wire, characterized in that: The method comprises a diamond wire busbar as claimed in any one of claims 1 to 7, a grinding layer (300) and first particles (301), wherein the grinding layer (300) covers at least a portion of the surface of the diamond wire busbar (10), the first particles (301) are dispersed in the grinding layer (300), and at least a portion of the first particles (301) protrude from the grinding layer (300).

13. The diamond wire according to claim 12, characterized in that: Second particles (302) are dispersed in the grinding layer (300); the second particles (302) are arranged between adjacent first particles (301); The thickness of the grinding layer (300) is 0.1 μm to 100 μm; and / or, The average particle size of the first particles (301) is 10 μm to 100 μm; and / or, The average particle size of the second particles (302) is 2 μm to 10 μm.

14. The diamond wire according to claim 12, characterized in that: A fourth metal layer (400) is provided between the diamond wire busbar and the grinding layer (300); the fourth metal layer (400) comprises metal nickel.

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