Heat-dissipating chip bonding film

Abstract

Provided is a heat-dissipating chip-bonding film which can exhibit sufficient heat dissipation properties, has good followability to unevenness on the surface of an adherend, and has a good appearance. The heat-dissipating die-bonding film according to the present invention is composed of a resin composition containing a thermosetting resin and a thermoplastic resin as resin components and containing an alumina filler as a thermally conductive filler, the alumina filler including a first alumina filler having an average particle diameter of 0.8-2.6 [mu] m, and the alumina filler including a second alumina filler having an average particle diameter of 0.8-2.6 [mu] m. The resin composition contains 24 parts by mass or more of the first alumina filler per 100 parts by mass of the total of the thermosetting resin, the thermoplastic resin, and the alumina filler, and the thermal conductivity of the heat-dissipating die-bonding film is 1.4 W / (m.K) or more.

Description

Technical Field

[0001] The present invention relates to a heat dissipating die-bonding film, and more particularly to a heat dissipating die-bonding film that contains a thermally conductive filler and exhibits heat dissipation. Background Art

[0002] In the past, it is known to use a die bonding film to bond (die-bond) a semiconductor chip (die) to an adherend such as a substrate or a lead frame (for example, Patent Document 1). In other words, it is known to bond (die-bond) the semiconductor chip to the adherend using the die bonding film.

[0003] However, in recent years, the operating speed of semiconductor devices including semiconductor chips has been increased, and three-dimensional integration in which a plurality of semiconductor chips are stacked has been implemented in order to increase the density of the semiconductor devices.

[0004] As described above, if the semiconductor device operates at a higher speed or is three-dimensionally integrated, the heat generated by the semiconductor device during operation increases. If the heat generated increases, the amount of heat stored inside the semiconductor device increases, and the temperature inside the semiconductor device rises.

[0005] If the temperature inside the semiconductor device rises and exceeds the maximum junction temperature of the semiconductor chip of the semiconductor device (e.g., 150° C.), the semiconductor chip may not operate normally and the semiconductor device may malfunction. Therefore, it is desirable to develop a semiconductor device with excellent heat dissipation.

[0006] In order to address the heat dissipation problem of such semiconductor devices, a heat dissipating die bonding film containing a thermally conductive filler is described in Patent Document 1 as the die bonding film. Specifically, a heat dissipating die bonding film is described, which contains a thermoplastic resin and a thermosetting resin as organic resin components, and contains a thermally conductive filler having a thermal conductivity of 12 W / m·K or more, and further, the content of the thermally conductive filler is within a predetermined range relative to the total amount of the organic resin component and the thermally conductive filler.

[0007] Prior art literature

[0008] Patent Literature

[0009] Patent Document 1: Japanese Patent Application Publication No. 2011-23607 Summary of the invention

[0010] Problem that the invention aims to solve

[0011] As described above, Patent Document 1 describes that the problem of heat dissipation can be solved by configuring the die-bonding film as a heat-dissipating die-bonding film.

[0012] However, the semiconductor device is expected to further increase in operating speed and density in the future, and therefore, further improvement in heat dissipation is desired in the heat dissipating die-bonding film.

[0013] However, the substrate as the adherend is provided with a base body made of resin or the like and a plurality of electrode parts provided on the surface of the base body, for example. Specifically, the substrate is provided with the plurality of electrode parts arranged so as to protrude from the surface of the base body. Therefore, the surface of the base body is formed with depressions and projections by the protrusions of the plurality of electrode parts.

[0014] In this case, the die-bonding film is used in a state where the semiconductor chip is attached to one side of the die-bonding film and the other side is bonded (die-bonded) to the substrate to embed the plurality of electrodes. Therefore, the die-bonding film preferably has good conformability to uneven surfaces.

[0015] However, research on such characteristics is not sufficient. In particular, research on heat-dissipating die-bonding films that contain a thermally conductive filler and have good conformability to irregularities is not sufficient.

[0016] In addition, since the thermally conductive filler inside the heat dissipating die-bonding film including only the thermally conductive filler as described above can be clearly visually recognized, the heat dissipating die-bonding film may have a poor appearance (poor appearance).

[0017] However, sufficient research has not been conducted on suppressing the poor appearance (poor appearance) of the die-bonding film.

[0018] That is, it is difficult to say that sufficient research has been done on heat-dissipating die-bonding films that can simultaneously exhibit the characteristics of exhibiting sufficient heat dissipation, exhibiting good conformability to the surface irregularities of an adherend, and having a good appearance.

[0019] Therefore, an object of the present invention is to provide a heat-dissipating die-bonding film that can exhibit sufficient heat dissipation, exhibits good conformability to the irregularities on the surface of an adherend, and has a good appearance.

[0020] Solutions for solving problems

[0021] The inventors of the present invention have conducted in-depth research and found that a heat-dissipating chip bonding film composed of a resin composition comprising a thermosetting resin and a thermoplastic resin as resin components and an alumina filler as a thermally conductive filler, and comprising an alumina filler having an average particle size within a specific range and a specific proportion or more, and a thermal conductivity of a specific value or more can exhibit the above three characteristics, thereby conceiving of the present invention.

[0022] That is, the heat dissipating die-bonding film of the present invention is composed of a resin composition containing a thermosetting resin and a thermoplastic resin as resin components and containing an alumina filler as a thermally conductive filler.

[0023] The alumina filler includes a first alumina filler having an average particle size of 0.8 μm or more and 2.6 μm or less,

[0024] The resin composition contains 24 parts by mass or more of the first alumina filler relative to 100 parts by mass of the total of the thermosetting resin, the thermoplastic resin and the alumina filler.

[0025] The heat dissipating die-bonding film has a thermal conductivity of 1.4 W / (m·K) or more. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a perspective view showing the structure of a heat dissipating die-bonding film according to one embodiment of the present invention.

[0027] Figure 2 It is a cross-sectional view for explaining a use example of the heat dissipating die-bonding film according to one embodiment of the present invention.

[0028] Figure 3 It is a cross-sectional view showing the structure of a dicing die-bonding film including the heat dissipating die-bonding film according to one embodiment of the present invention.

[0029] Figure 4A The figure is a cross-sectional view schematically showing a half-cutting process in a method for manufacturing a semiconductor integrated circuit.

[0030] Figure 4B The figure is a cross-sectional view schematically showing a half-cutting process in a method for manufacturing a semiconductor integrated circuit.

[0031] Figure 4C This is a cross-sectional view schematically showing a backside grinding process in a method for manufacturing a semiconductor integrated circuit.

[0032] Figure 4D It is a cross-sectional view schematically showing a backside grinding process in a method for manufacturing a semiconductor integrated circuit.

[0033] Figure 5A It is a cross-sectional view schematically showing a mounting step in a method of manufacturing a semiconductor integrated circuit.

[0034] Figure 5B It is a cross-sectional view schematically showing a mounting step in a method of manufacturing a semiconductor integrated circuit.

[0035] Fig. 6A It is a cross-sectional view schematically showing a state of a low-temperature expansion process in a method of manufacturing a semiconductor integrated circuit.

[0036] Figure 6B It is a cross-sectional view schematically showing a state of a low-temperature expansion process in a method of manufacturing a semiconductor integrated circuit.

[0037] Figure 6C It is a cross-sectional view schematically showing a state of a low-temperature expansion process in a method of manufacturing a semiconductor integrated circuit.

[0038] Fig. 7A It is a cross-sectional view schematically showing a state of an expansion process at room temperature in a method for manufacturing a semiconductor integrated circuit.

[0039] Figure 7B It is a cross-sectional view schematically showing a state of an expansion process at room temperature in a method for manufacturing a semiconductor integrated circuit.

[0040] Figure 8 This is a cross-sectional view schematically showing a state of a cutout maintaining step in a method of manufacturing a semiconductor integrated circuit.

[0041] Fig. 9 The figure is a cross-sectional view schematically showing a pickup step in a method for manufacturing a semiconductor integrated circuit.

[0042] Description of Reference Numerals

[0043] 1. Substrate layer

[0044] 2 Adhesive layer

[0045] 10 Heat dissipation die bonding film

[0046] 20 Semiconductor Chip

[0047] 30 Adhesive

[0048] 40 Cutting tape

[0049] 50 Cutting die bonding film

[0050] G Back Grinding Tape

[0051] H Cage

[0052] J Adsorption fixture

[0053] P pin component

[0054] R cutting ring

[0055] T Wafer Processing Tape

[0056] U lifting member

[0057] W Semiconductor Wafer DETAILED DESCRIPTION

[0058] Hereinafter, one embodiment of the present invention will be described.

[0059] [Heat dissipation die-bonding film]

[0060] like Figure 1 As shown, the heat dissipating die-bonding film 10 of the present embodiment is formed of a resin composition containing a thermosetting resin and a thermoplastic resin as resin components and containing an alumina filler as a thermally conductive filler.

[0061] It should be noted that Figure 1 In the figure, as the alumina filler, only a first alumina filler 10a described later is shown.

[0062] In the heat-dissipating die-bonding film 10 of the present embodiment, the alumina filler includes a first alumina filler 10 a having an average particle diameter of 0.8 μm or more and 2.6 μm or less.

[0063] In the heat dissipating die bond film 10 of the present embodiment, the resin composition contains 24 parts by mass or more of the first alumina filler 10 a with respect to 100 parts by mass of the total of the thermosetting resin, the thermoplastic resin, and the alumina filler.

[0064] The thermal conductivity of the heat-dissipating die-bonding film 10 of the present embodiment is 1.4 W / (m·K) or more.

[0065] The heat dissipating die-bonding film 10 of the present embodiment is usually in the form of a long tape, and is stored in a state of being wound into a roll, that is, in a state of being a wound body.

[0066] The heat dissipating die-bonding film 10 of this embodiment is as follows Figure 2 As shown, a semiconductor chip (die) 20 is bonded (die-bonded) to an adherend 30 such as a substrate or a lead frame for use.

[0067] Specifically, the heat-dissipating die-bonding film 10 of the present embodiment is used with the other surface 10B bonded to the adherend 30 in a state where the semiconductor chip 20 is bonded to one surface 10A.

[0068] As described above, the heat dissipating die bond film 10 of the present embodiment contains the first alumina filler 10a having an average particle size of 0.8 μm or more and 2.6 μm in a mass ratio of 24 parts by mass or more as specified above, and has a high thermal conductivity of 1.4 W / (m·K) or more.

[0069] If most of the alumina filler contained in the heat dissipation chip bonding film (for example, 80% by mass or more) is set as a small-particle alumina filler with an average particle size of less than 0.8 μm, it may be difficult to visually identify the alumina filler inside the heat dissipation chip bonding film, but the melt viscosity of the aforementioned heat dissipation chip bonding film will increase, and there is a concern that the heat dissipation chip bonding film will have reduced embedding properties into the unevenness formed on the surface of the adherend.

[0070] On the other hand, the first alumina filler 10a has a moderate average particle size of 0.8 μm or more and 2.6 μm or less as described above, so even if the heat dissipating die bonding film 10 contains the first alumina filler 10a at a mass ratio of 24 parts by mass or more as specified above, the melt viscosity of the heat dissipating die bonding film 10 can be suppressed from excessively increasing. As a result, the heat dissipating die bonding film 10 of the present embodiment has sufficient followability to the unevenness of the surface of the adherend and is easy to be fully embedded in the concave portion. In addition, the melt viscosity of the heat dissipating die bonding film 10 is an appropriate value, so the heat dissipating die bonding film 10 can fully ensure the shape retention as a film.

[0071] In addition, the alumina filler includes the first alumina filler 10a having the above-mentioned average particle size at the above-mentioned mass ratio, so that the surface area of ​​the alumina filler as a whole can be sufficiently increased. As a result, the heat dissipating die bonding film 10 has a high thermal conductivity of 1.4 W / (m·K) or more, and can exhibit sufficient heat dissipation when used in a semiconductor device.

[0072] In addition, as described above, the heat dissipating die bonding film 10 contains the first alumina filler 10a at the above-mentioned mass ratio, so it becomes difficult to visually identify the alumina filler when visually recognizing the heat dissipating die bonding film 10. Thus, the heat dissipating die bonding film 10 can have a good appearance (excellent appearance).

[0073] The thermal conductivity of the heat dissipating die-bonding film 10 can be calculated using the following formula (1).

[0074] Thermal conductivity = thermal diffusivity × specific heat × specific gravity (1)

[0075] It should be noted that the unit of thermal conductivity is W / (m·K) and the unit of thermal diffusivity is m 2 / s, the unit of specific heat is J / (g·℃), and the unit of specific gravity is g / cm 3 .

[0076] The specific heat and the specific gravity can be obtained using a first test body of the heat dissipating die-bonding film 10 having a predetermined size (thickness 0.5 mm, plane size 10 mm×10 mm (10 mm square)). The first test body can be obtained by the following procedure.

[0077] (1) A plurality of heat dissipating die-bonding films 10 are stacked to a thickness of 0.5 mm to obtain a stacked body.

[0078] (2) The laminated body was subjected to a pressure oven at a pressure of 7 kg / m 2 After a first heat treatment of heating at 120° C. for 1 hour, a second heat treatment of heating at 175° C. for 1 hour was performed.

[0079] (3) The laminated body after the second heat treatment was cut into 10 mm squares to obtain a first test body.

[0080] The specific heat can be measured by DSC method. The specific heat was measured using DSC6220 manufactured by SII NanoTechnology Inc. under the conditions of a heating rate of 10°C / min and a temperature range of 20 to 300°C.

[0081] Then, based on the data obtained by the DSC method, the specific heat was calculated by the method described in the JIS handbook (Specific heat capacity measurement method K-7123).

[0082] In addition, the said specific gravity can be measured using the electronic density meter (trade name "MDS-300" manufactured by Alfa Mirage Co., Ltd.).

[0083] The thermal diffusivity can be determined using a second test body obtained by spraying a black guard spray onto the surface (surface to be measured) of the first test body (the laminated body cut into 10 mm squares). Specifically, the thermal diffusivity of the second test body is measured using a xenon flash analyzer (Model "LFA447" manufactured by NETZSCH) as a measuring device.

[0084] The thermal conductivity of the heat dissipating die-bonding film 10 may be 1.6 W / (m·K) or more, or 1.8 W / (m·K) or more. The upper limit of the thermal conductivity is, for example, 10 W / (m·K).

[0085] As the aforementioned thermosetting resin, for example, epoxy resin, phenolic resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, or thermosetting polyimide resin, etc., can be cited. Among these, as the aforementioned thermosetting resin, at least one of the aforementioned epoxy resin and the aforementioned phenolic resin is preferred, and the aforementioned thermosetting resin more preferably includes both the aforementioned epoxy resin and the aforementioned phenolic resin.

[0086] Examples of the epoxy resin include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, brominated bisphenol A epoxy resin, hydrogenated bisphenol A epoxy resin, bisphenol AF epoxy resin, biphenyl epoxy resin, naphthalene epoxy resin, fluorene epoxy resin, phenol novolac epoxy resin, o-cresol epoxy resin, trihydroxyphenylmethane epoxy resin, tetraphenol ethane epoxy resin, hydantoin epoxy resin, triglycidyl isocyanurate epoxy resin, and glycidylamine epoxy resin.

[0087] Examples of the phenolic resin include novolac phenolic resins, resole phenolic resins, and polyoxystyrene such as polyparaoxystyrene. When the phenolic resin and the epoxy resin are used in combination, the phenolic resin also functions as a curing agent for the epoxy resin.

[0088] When the epoxy resin and the phenol resin are used in combination, the mass ratio of the epoxy resin is preferably 10 parts by mass or more, more preferably 30 parts by mass or more, and more preferably 45 parts by mass or more, relative to 100 parts by mass of the total of the epoxy resin and the phenol resin.

[0089] The mass ratio of the epoxy resin may be 90 parts by mass or less, 70 parts by mass or less, or 55 parts by mass or less.

[0090] The heat dissipating chip bonding film 10 of this embodiment preferably contains a heat curing catalyst (curing accelerator) from the viewpoint of fully carrying out the curing reaction of the aforementioned thermosetting resin and increasing the curing reaction speed. As the aforementioned heat curing catalyst, for example, imidazole compounds, triphenylphosphine compounds, amine compounds, and trihaloborane compounds can be cited.

[0091] The resin composition constituting the heat dissipating die bond film 10 of the present embodiment may contain a silane coupling agent. By containing the silane coupling agent, the affinity between the alumina filler and the resin component can be improved, so that the alumina filler can be fully dispersed in the resin composition.

[0092] The aforementioned silane coupling agent is preferably a compound having no double bond in the structure. It should be noted that, as a silane coupling agent having no double bond in the structure, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane (as a commercial product, Shin-Etsu Silicones company's trade name "KBM-303"), 3-glycidoxypropylmethyldimethoxysilane (as a commercial product, Shin-Etsu Silicones company's trade name "KBM-402"), 3-glycidoxypropyltrimethoxysilane (as a commercial product, Shin-Etsu Silicones company's trade name "KBM-403"), 3-glycidoxypropylmethyldiethoxysilane (as a commercial product, Shin-Etsu Silicones company's trade name "KBE-402"), 3-glycidoxypropyltriethoxysilane (as a commercial product, Shin-Etsu Silicones company's trade name "KBE-402"), 3-glycidoxypropyltriethoxysilane (as a commercial product, Shin-Etsu Silicones company's trade name "KBM-403"), 3-glycidoxypropylmethyldieth ...KBM-403"), 3-glycidoxypropyltriethoxysilane (as a commercial product, Shin-Etsu Silicones company's trade name "KBM-403"), 3-glycidoxypropyltriethoxysilane (as a commercial product, Shin-Etsu Silicones company's trade name "KBM-403"), 3-glycidoxypropyltriethoxysilane (as a commercial product, As a commercial product, N-2-(aminoethyl)-3-aminopropylmethyldimethoxysilane (commercially available under the trade name "KBM-602" manufactured by Shin-Etsu Silicones), N-2-(aminoethyl)-3-aminopropyltrimethoxysilane (commercially available under the trade name "KBM-603" manufactured by Shin-Etsu Silicones), 3-aminopropyltrimethoxysilane (commercially available under the trade name "KBM-903" manufactured by Shin-Etsu Silicones), 3-aminopropyltriethoxysilane (commercially available under the trade name "KBE-303" manufactured by Shin-Etsu Silicones), etc.

[0093] If a compound having a double bond in its structure is used as the aforementioned silane coupling agent, a strong bond can be formed between the adhesive layer 2 and the heat dissipation die bonding film 10 in the dicing die bonding film 50 described later. On the other hand, if a compound not having a double bond in its structure is used as the aforementioned silane coupling agent, the formation of the strong bond as described above can be suppressed. Thus, in the pickup step described later, the heat dissipation die bonding film 10 in a state where a semiconductor chip (die) is attached can be easily picked up from the adhesive layer 2.

[0094] The thermoplastic resin functions as a binder. Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resins such as polyamide 6 or polyamide 6,6, phenoxy resin, acrylic polymer, saturated polyester resins such as PET or PBT, polyamide-imide resin, and fluororesin.

[0095] The above-mentioned thermoplastic resins may be used alone or in combination of two or more.

[0096] As the thermoplastic resin, an acrylic polymer is preferred because it contains less ionic impurities and has high heat resistance, thereby making it easy to ensure connection reliability.

[0097] The acrylic polymer is preferably a polymer containing a monomer unit derived from a (meth)acrylic acid ester as the largest monomer unit in terms of mass ratio.

[0098] As a (meth)acrylic acid ester, a linear alkyl (meth)acrylate, a cycloalkyl (meth)acrylate, an aryl (meth)acrylate, etc. are mentioned, for example.

[0099] The acrylic polymer may contain monomer units derived from other components copolymerizable with (meth)acrylate. Examples of the other components include various functional group-containing monomers such as carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, and acrylonitrile (including multifunctional monomers).

[0100] In the heat dissipating die-bonding film 10 of the present embodiment, the acrylic polymer is preferably a copolymer of acrylic acid (AA), acrylonitrile (AN), butyl acrylate (BA), and ethyl acrylate (EA).

[0101] The acrylic polymer preferably has a mass average molecular weight Mw of 400,000 or less, and has a functional group that can react with at least one of the epoxy resin and the phenol resin.

[0102] The mass average molecular weight Mw of the acrylic polymer is preferably 300,000 or less, more preferably 200,000 or less, and even more preferably 160,000 or less.

[0103] The mass average molecular weight Mw of the acrylic polymer is preferably 20,000 or more, more preferably 40,000 or more.

[0104] The mass average molecular weight Mw of the acrylic polymer can be measured by GPC under the following conditions.

[0105] ·Measurement device: Made by Waster, model "Alliance GPC2000"

[0106] Column: Two TSKgel GMH6-HT (manufactured by Tosoh Corporation) connected in series, and two TSKgel GMH-HTL connected in series on the downstream side

[0107] Column size: TSKgel GMH6-HT and TSKgel GMH-HTL are both 7.5mm inner diameter x 300mm length

[0108] Column temperature: 140°C

[0109] Flow rate: 1.0mL / min

[0110] ·Eluent: o-dichlorobenzene

[0111] Sample preparation concentration: 0.10 mass% (dissolved in o-dichlorobenzene)

[0112] Sample injection volume: 40μL

[0113] Detector: RI (differential refractometer)

[0114] Standard sample: polystyrene

[0115] As the functional group of the acrylic polymer, for example, a carboxyl group is mentioned.

[0116] The carboxyl group is a functional group that can react with the glycidyl group (epoxy group) of the epoxy resin, and is also a functional group that can react with the hydroxyl group of the phenol resin.

[0117] That is, the carboxyl group is a functional group that can react with the epoxy resin and the phenol resin.

[0118] In addition, as the functional group of the acrylic polymer, a glycidyl group can also be mentioned.

[0119] The glycidyl group is a functional group that can react with the glycidyl group (epoxy group) of the epoxy resin, and is also a functional group that can react with the hydroxyl group of the phenol resin.

[0120] That is, the glycidyl group is also a functional group that can react with the epoxy resin and the phenol resin.

[0121] In addition, in this specification, the functional group which can react with at least one of the said epoxy resin and the said phenol resin refers to the said carboxyl group and the said glycidyl group.

[0122] The heat-dissipating die-bonding film 10 preferably has a melt viscosity of 2500 Pa·s or less at 120° C.

[0123] The value of the melt viscosity may be 2400 Pa·s or less, 2200 Pa·s or less, 2000 Pa·s or less, 1500 Pa·s or less, or 1100 Pa·s or less.

[0124] The melt viscosity may be 500 Pa·s or more, 700 Pa·s or more, or 900 Pa·s or more.

[0125] By setting the melt viscosity value within the above numerical range, the heat dissipating chip bonding film 10 can fully maintain its sheet shape and has better followability to the unevenness formed on the surface of the adherend (for example, unevenness formed by multiple electrode portions protruding from the surface of the substrate as described above).

[0126] The melt viscosity of the heat dissipating die bonding film 10 can be measured by a parallel plate method using a rheometer (manufactured by Thermo Fisher Scientific, trade name "MARSIII"). Specifically, the heat dissipating die bonding film 10 is supplied to a plate heated to 120°C and the measurement is started, and the average value of the value after 240 seconds from the start of the measurement is taken as the melt viscosity. It should be noted that the gap between the plates is 0.1 mm.

[0127] The resin composition preferably contains 3 parts by mass or more and 80 parts by mass or less of the acrylic polymer relative to 100 parts by mass of the total of the thermosetting resin and the thermoplastic resin.

[0128] The resin composition may contain 5 parts by mass or more, 10 parts by mass or more, or 20 parts by mass or more of the acrylic polymer relative to 100 parts by mass of the total of the thermosetting resin and the thermoplastic resin.

[0129] The resin composition may contain 70 parts by mass or less, 60 parts by mass or less, or 50 parts by mass or less of the acrylic polymer relative to 100 parts by mass of the total of the thermosetting resin and the thermoplastic resin.

[0130] In the heat dissipating chip bonding film 10 of this embodiment, the aforementioned alumina filler preferably includes a first alumina filler 10a having an average particle size of 1.0 μm or more, more preferably includes a first alumina filler 10a having an average particle size of 1.2 μm or more, and more preferably includes a first alumina filler 10a having an average particle size of 1.5 μm or more.

[0131] In addition, in the heat dissipating chip bonding film 10 of the present embodiment, the aforementioned alumina filler preferably includes a first alumina filler 10a having an average particle size of less than 2.5 μm, more preferably includes a first alumina filler 10a having an average particle size of less than 2.4 μm, and more preferably includes a first alumina filler 10a having an average particle size of less than 2.2 μm.

[0132] The average particle size of the first alumina filler 10a can be measured by a dynamic light scattering method (DLS). Specifically, the first alumina filler 10a is dispersed in methyl ethyl ketone (MEK) so that the solid content concentration becomes 1% by mass or less, a sample for particle size measurement is prepared, and the average particle size of the first alumina filler 10a in the sample for particle size measurement is measured using a dynamic light scattering photometer (model "ZEN3600": manufactured by Sysmex Corporation).

[0133] In addition, the sample for particle size measurement may be treated with an ultrasonic homogenizer for 2 minutes before the measurement.

[0134] The first alumina filler 10a preferably has a thickness of 0.5 μm. 2 / g or more and 6.0m 2 The specific surface area can be 0.8 m 2 / g or more, can be 1.0m 2 / g or more, 1.2m 2 / g or more. In addition, the above-mentioned specific surface area can be 5.0m 2 / g or less, can be 3.0m 2 / g or less, can be 2.0m 2 / g or less, and can also be 1.5m 2 / g or less.

[0135] The specific surface area is calculated by the BET method according to JIS Z8830: 2013. Specifically, a measurement sample (the first alumina filler 10a) is placed in a measurement cell, and the measurement cell is subjected to a heat treatment at 200°C for 30 minutes, and the specific surface area is calculated based on the amount of nitrogen released during the heat treatment. It should be noted that the measurement cell is cooled with liquid nitrogen after the heat treatment.

[0136] Each particle of the first alumina filler 10a may have a polyhedral shape consisting of 6 or more planes, or may have a polyhedral shape consisting of 8 or more planes. Since each particle of the first alumina filler 10a has a polyhedral shape, the particles can be brought into surface contact with each other. Thus, for example, compared with the case of using the first alumina filler 10a containing spherical particles, the contact area between the particles can be increased. As a result, a good heat dissipation path can be formed in the heat dissipating die bonding film 10.

[0137] It should be noted that Figure 1 The first alumina filler 10a including particles of a hexagonal crystal structure is shown. That is, Figure 1 Each particle of the first alumina filler 10a shown is composed of eight planes.

[0138] As a commercial product of the first alumina filler 10a including particles having the above-mentioned polyhedral shape, there can be cited the Sumicorundum (registered trademark) series manufactured by Sumitomo Chemical Co., Ltd. As the Sumicorundum (registered trademark) series, for example, there can be cited the trade name "Sumicorundum AA-07", the trade name "Sumicorundum AA-1.5", and the trade name "Sumicorundum AA-2".

[0139] In the heat dissipating die bonding film 10 of the present embodiment, the alumina filler may further include a second alumina filler having an average particle diameter different from that of the first alumina filler 10a. When the alumina filler includes the first alumina filler 10a and the second alumina filler, a particle size distribution curve whose vertical axis adopts a frequency based on the volume of the alumina filler may have a first peak corresponding to the first alumina filler 10a and a second peak corresponding to the second alumina filler.

[0140] In addition, in the particle size distribution curve, the first peak top may be present on a larger particle size side than the second peak top.

[0141] As described above, when the alumina filler further includes the second alumina filler in addition to the first alumina filler 10a, the particles of the second alumina filler having a small particle size can be interspersed between the particles of the first alumina filler 10a having a large particle size. As a result, the contact area between the particles of the alumina filler can be further increased in the heat dissipating die bonding film 10. As a result, a good heat dissipation path can be formed in the heat dissipating die bonding film 10.

[0142] The average particle size of the second alumina filler is preferably 0.7 μm or less, preferably 0.5 μm or less. The average particle size of the second alumina filler may be 0.01 μm or more, 0.05 μm or more, 0.1 μm or more, or 0.2 μm or more.

[0143] The average particle size of the second alumina filler can be measured in the same manner as the first alumina filler 10a.

[0144] As described above, when each particle of the first alumina filler 10a has a polyhedral shape, each particle of the second alumina filler also preferably has a polyhedral shape.

[0145] In this case, since the particles of the first alumina filler 10 a can be brought into surface contact with the particles of the second alumina filler, a more favorable heat dissipation path can be formed in the heat dissipating die-bonding film 10 .

[0146] Furthermore, since each particle of the second alumina filler has a polyhedral shape, the particles of the second alumina filler can also be in surface contact with each other.

[0147] Examples of commercially available products of the second polyhedral alumina filler include "Sumicorundum AA-03" manufactured by Sumitomo Chemical Co., Ltd.

[0148] In addition, when the second alumina filler having spherical particles is used, the melt viscosity of the heat dissipating die-bonding film 10 can be reduced, thereby improving the adhesiveness of the heat dissipating die-bonding film 10 .

[0149] Examples of the second alumina filler having spherical particles include "AO-502" manufactured by ADMATECHS CO., LTD. under the trade name.

[0150] When each particle of the second alumina filler is spherical, each particle of the second alumina filler may be surface treated. The surface treatment may be performed using a surface treatment agent such as a silane coupling agent.

[0151] By pre-treating the surface of the second alumina filler with a surface treatment agent such as a silane coupling agent, the affinity between the thermosetting resin and the thermoplastic resin and the second alumina filler can be improved, thereby making it easier to disperse the second alumina filler more fully in the resin composition.

[0152] Examples of the silane coupling agent include “KBM-403” (a silane coupling agent having an epoxy group) manufactured by Shin-Etsu Chemical Co., Ltd. and “KBM-503” (a silane coupling agent having a methacryloyl group) manufactured by Shin-Etsu Chemical Co., Ltd.

[0153] When the alumina filler includes both the first alumina filler 10a and the second alumina filler, the content of the first alumina filler 10a in the alumina filler is preferably greater than the content of the second alumina filler. The content C1 of the first alumina filler 10a and the content C2 of the second alumina filler preferably satisfy the relationship of C1:C2=9:1 to 1:9 in terms of mass ratio, more preferably satisfy the relationship of 7:3 to 3:7, and more preferably satisfy the relationship of 7:3 to 5:5.

[0154] By satisfying the above relationship, the particles of the second alumina filler can be more appropriately interspersed between the particles of the first alumina filler 10 a . Thus, a better heat dissipation path can be formed in the heat dissipating die-bonding film 10 .

[0155] The resin composition may contain more than 40 parts by mass of the first alumina filler 10a, more than 50 parts by mass, more than 60 parts by mass, more than 70 parts by mass, more than 80 parts by mass, more than 82 parts by mass, or more than 84 parts by mass, relative to a total of 100 parts by mass of the aforementioned thermosetting resin, the aforementioned thermoplastic resin and the first alumina filler 10a.

[0156] The resin composition may contain 95 parts by mass or less of the first alumina filler 10a, 92 parts by mass or less, 90 parts by mass or less, 88 parts by mass or less, or 86 parts by mass or less, relative to a total of 100 parts by mass of the thermosetting resin, the thermoplastic resin, and the first alumina filler 10a.

[0157] The thickness of the heat dissipating die-bonding film 10 is not limited, and is, for example, 1 μm or more and 200 μm or less. The thickness may be 3 μm or more and 150 μm or less, or 5 μm or more and 100 μm or less.

[0158] The thickness of the heat-dissipating die-bonding film 10 can be determined by, for example, measuring the thickness at five points selected at random using a digital dial gauge (manufactured by PEACOCK, Model R-205) and calculating the arithmetic average of the thicknesses.

[0159] The heat-dissipating die-bonding film 10 of the present embodiment preferably has a breaking elongation of 10% or less at -15° C. The breaking elongation is more preferably 8% or less, and even more preferably 5% or less.

[0160] The heat dissipation die bonding film 10 has a moderate hardness by setting the elongation at break of the heat dissipation die bonding film 10 within the above-mentioned range. Therefore, as described later, by expanding the dicing die bonding film 50 having the heat dissipation die bonding film 10, when the semiconductor wafer bonded to the heat dissipation die bonding film 10 is cut into a plurality of semiconductor chips, the cutting can be performed more efficiently.

[0161] The heat dissipating chip bonding film 10 can be obtained as follows: a resin composition containing the components as described above is dissolved or suspended in an organic solvent (for example, methyl ethyl ketone (MEK)) to obtain an adhesive composition, the adhesive composition is applied to a surface of a resin film etc. using an applicator etc., and the applied adhesive composition is dried to thereby obtain the heat dissipating chip bonding film 10.

[0162] The resin film is preferably a release film (release liner) having one surface subjected to a release treatment. When the release film is used as the resin film, the adhesive composition is preferably applied to one surface subjected to the release treatment.

[0163] [Dicing Die Bonding Film]

[0164] The dicing die-bonding film 50 of the present embodiment includes a dicing tape 40 in which the adhesive layer 2 is laminated on a base material layer 1 , and a heat-dissipating die-bonding film 10 laminated on the adhesive layer 2 with a part of the adhesive layer 2 exposed.

[0165] In the dicing die-bonding film 50 of the present embodiment, the heat-dissipating die-bonding film 10 of the above-described embodiment is used as the heat-dissipating die-bonding film 10 .

[0166] In the dicing die-bonding film 50 , a semiconductor wafer is attached to the heat-dissipating die-bonding film 10 .

[0167] When the semiconductor wafer is cut using the dicing die-bonding film 50, the heat-dissipating die-bonding film 10 is also cut together with the semiconductor wafer. Figure 2 The semiconductor chips are cut into pieces corresponding to the sizes of the individualized semiconductor chips. Thus, individualized semiconductor chips with heat dissipating die-bonding films 10 can be obtained.

[0168] The base layer 1 supports the adhesive layer 2. The base layer 1 is made of metal foil, fiber sheet, rubber sheet, resin film or the like.

[0169] The base material layer 1 is preferably made of a resin film. The base material layer 1 may have a single layer structure or a laminated structure.

[0170] The fiber sheet is made of, for example, paper, woven fabric, or nonwoven fabric.

[0171] Examples of the material of the resin film include polyolefins such as polyethylene, polypropylene, and ethylene-propylene copolymers; copolymers of ethylene such as ethylene-vinyl acetate copolymers, ionomer resins, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylate random copolymers, and ethylene-(meth)acrylate alternating copolymers; polyesters such as polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate; polyacrylates; polyvinyl chloride (PVC); polyurethane; polycarbonate; polyphenylene sulfide; polyamides such as aliphatic polyamides and wholly aromatic polyamides (aramid); polyetheretherketone; polyimide; polyetherimide; polyvinylidene chloride; ABS (acrylonitrile-butadiene-styrene copolymer); cellulose or cellulose derivatives; silicone-containing polymers; fluorine-containing polymers, etc.

[0172] These may be used alone or in combination of two or more.

[0173] When the base material layer 1 is made of a resin film, the base material layer 1 may be obtained by non-stretching molding or by stretching molding, and is preferably obtained by stretching molding.

[0174] The surface of the substrate layer 1 on one side of the laminated adhesive layer 2 (hereinafter also referred to as the surface) may be subjected to a surface treatment from the viewpoint of improving the adhesion with the adhesive layer 2. As the surface treatment, an oxidation treatment based on a chemical method or a physical method such as chromic acid treatment, ozone exposure, flame exposure, high voltage electric shock exposure, ionizing radiation treatment, etc. may be adopted. In addition, as the surface treatment, a coating treatment based on a coating agent such as an anchor coating agent, a primer, an adhesive, etc. may be implemented.

[0175] The surface of the substrate layer 1 on which the pressure-sensitive adhesive layer 2 is not laminated (hereinafter also referred to as the back surface) may be coated with a release agent (release agent) such as a silicone resin or a fluororesin to improve releasability.

[0176] The thickness of the base layer 1 is preferably 55 μm to 195 μm, more preferably 55 μm to 190 μm, further preferably 55 μm to 170 μm, and most preferably 60 μm to 160 μm. By setting the thickness of the base layer 1 to the aforementioned range, the dicing tape 40 can be manufactured efficiently. In addition, the die bonding layer 3 of the die bonding film 50 can be cut efficiently.

[0177] The thickness of the base material layer 1 can be determined by, for example, measuring the thickness at five points selected at random using a digital micrometer (manufactured by PEACOCK, Model R-205) and calculating the arithmetic average of these thicknesses.

[0178] In the dicing die-bonding film 50 of the present embodiment, the adhesive layer 2 has adhesiveness and is bonded to the heat-dissipating die-bonding film 10, thereby being able to hold the heat-dissipating die-bonding film 10. The adhesive layer 2 contains an adhesive and exhibits the above-described adhesiveness.

[0179] As the adhesive, there may be mentioned an adhesive whose adhesive force can be reduced by an external action during use of the dicing die-bonding film 50 (hereinafter referred to as an adhesive reducing type adhesive).

[0180] When an adhesive of an adhesion-reducing type is used as an adhesive, the adhesive layer 2 may be used in a state where it exhibits a relatively high adhesive force (hereinafter referred to as a high adhesive force state) and a state where it exhibits a relatively low adhesive force (hereinafter referred to as a low adhesive force state) during use of the dicing die bonding film 50. For example, when a semiconductor wafer of the heat dissipating die bonding film 10 attached to the dicing die bonding film 50 is cut, the high adhesive force state is used to suppress the plurality of semiconductor chips singulated by the cutting of the semiconductor wafer from floating or peeling off from the adhesive layer 2.

[0181] On the other hand, after the semiconductor wafer is cut, the low-adhesion state is used to facilitate picking up the plurality of individual semiconductor chips from the adhesive layer 2 .

[0182] As the adhesion-reducing adhesive, for example, there can be mentioned an adhesive that can be cured by irradiation with active energy rays (hereinafter referred to as active energy ray-curing adhesive) during use of the dicing die-bonding film 50. That is, the adhesion-reducing adhesive contains a curing component that is cured by irradiation with active energy rays.

[0183] As the active energy ray-curable adhesive, for example, an adhesive that cures by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays, or X-rays can be cited. Among these, an adhesive that cures by irradiation with ultraviolet rays (ultraviolet curable adhesive) is preferred.

[0184] Examples of the active energy ray-curable adhesive include an additive-type active energy ray-curable adhesive containing a base polymer as a main component and an active energy ray-polymerizable monomer component or oligomer component having an active energy ray-polymerizable carbon-carbon double bond or other functional group.

[0185] The base polymer is preferably an acrylic polymer. The base polymer may be a base polymer that undergoes a polymerization reaction by irradiation with active energy rays to crosslink molecules, thereby reducing the adhesive force of the pressure-sensitive adhesive layer 2 .

[0186] Examples of the acrylic polymer include acrylic polymers containing monomer units derived from (meth)acrylates, and examples of (meth)acrylates include linear alkyl (meth)acrylates, cycloalkyl (meth)acrylates, and aryl (meth)acrylates.

[0187] As the aforementioned monomer unit derived from (meth)acrylate, for example, preferred monomer units include 2-hydroxyethyl acrylate (HEA), ethyl acrylate (EA), butyl acrylate (BA), 2-ethylhexyl acrylate (2EHA), isononyl acrylate (iNA), lauryl acrylate (LA), 4-acryloylmorpholine (AMCO), 2-isocyanatoethyl methacrylate (2-methacryloyloxyethyl isocyanate MOI) and the like.

[0188] The (meth)acrylic acid ester-derived monomer unit may be used alone or in combination of two or more.

[0189] The acrylic polymer preferably contains monomer units of 2-ethylhexyl acrylate (2EHA), 2-hydroxyethyl acrylate (HEA), and 2-isocyanatoethyl methacrylate (MOI) as the monomer units derived from the (meth)acrylic acid ester.

[0190] In addition, in the aforementioned acrylic polymer, as the aforementioned monomer unit derived from the (meth)acrylate ester, in addition to the monomer units of the aforementioned 2EHA, the aforementioned HEA, and the aforementioned MOI, the molecule may also contain a monomer unit of the aforementioned lauryl acrylate (LA) or a monomer unit of isononyl acrylate (iNA).

[0191] The pressure-sensitive adhesive layer 2 may contain an external crosslinking agent. The external crosslinking agent is not particularly limited as long as it can react with the base polymer (eg, acrylic polymer) to form a crosslinked structure.

[0192] Examples of such an external crosslinking agent include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based crosslinking agents.

[0193] Examples of the active energy ray-polymerizable monomer component include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxy penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butanediol di(meth)acrylate.

[0194] Examples of the active energy ray polymerizable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, or polybutadiene. The content ratio of the active energy ray polymerizable monomer component or oligomer component in the active energy ray curable adhesive is selected within a range that appropriately reduces the adhesiveness of the adhesive layer 2.

[0195] The active energy ray-curable adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include azo compounds, α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, camphorquinone, halogenated ketones, acylphosphine oxides, and acylphosphonates.

[0196] Examples of the azo compound include azobisisobutyronitrile (AIBN).

[0197] When the pressure-sensitive adhesive layer 2 contains an external crosslinking agent, the pressure-sensitive adhesive layer 2 preferably contains 0.1 parts by mass or more and 3 parts by mass or less of the external crosslinking agent.

[0198] Moreover, when the adhesive layer 2 contains a photopolymerization initiator, the adhesive layer 2 preferably contains 0.1 parts by mass or more and 10 parts by mass or less of the photopolymerization initiator.

[0199] The adhesive layer 2 may contain, in addition to the above-mentioned components, a cross-linking accelerator, a tackifier, an antioxidant, a pigment, a colorant such as a dye, and the like.

[0200] The thickness of the adhesive layer 2 is preferably 1 μm or more and 50 μm or less, more preferably 2 μm or more and 30 μm or less, and further preferably 5 μm or more and 25 μm or less.

[0201] The thickness of the pressure-sensitive adhesive layer 2 can be determined by, for example, measuring the thickness at five points selected at random using a digital micrometer (manufactured by PEACOCK, Model R-205) and calculating the arithmetic average of these thicknesses.

[0202] It should be noted that, in the dicing die bonding film 50 of the present embodiment, when the adhesive layer 2 includes the aforementioned ultraviolet curing adhesive, the peeling force of the heat dissipating die bonding film 10 on the adhesive layer 2 after ultraviolet irradiation is preferably 0.5N / 20mm or less. The aforementioned peeling force is more preferably 0.2N / 20mm or less, more preferably 0.1N / 20mm or less, and more preferably 0.08N / 20mm or less.

[0203] When the peeling force is within the above range, the semiconductor chip with the heat dissipating die-bonding film 10 can be smoothly picked up in the pickup step described later.

[0204] The peeling strength of the heat dissipating die-bonding film 10 to the pressure-sensitive adhesive layer 2 after ultraviolet irradiation can be measured by the following procedure using a tensile tester (for example, manufactured by Shimadzu Corporation, trade name “AGS-X”).

[0205] (1) A backing tape (e.g., Nitto Denko Corporation, trade name "BT-315") is attached at room temperature (23±2°C) to the exposed surface of the heat dissipating die bonding film 10 in a dicing die bonding film 50 in which the heat dissipating die bonding film 10 is laminated on the adhesive layer 2 of a dicing tape 40. Thus, a laminate of the dicing die bonding film 50 and the backing tape is obtained.

[0206] (2) Using a cutter, a test piece for measurement was cut out from the above-mentioned laminated body into a size of 100 mm in width x 120 mm in length.

[0207] (3) The test specimen for measurement is irradiated with ultraviolet light (UV) from the dicing tape 40 side. The ultraviolet light (UV) irradiation is performed using a high pressure mercury lamp and a cumulative light intensity of 300 mJ / cm 2 And UV illumination 80W / cm 2 conditions to implement.

[0208] (4) The peeling force of the heat dissipating die bond film 10 to the adhesive layer 2 is measured on the test specimen after ultraviolet irradiation using the tensile tester to obtain an average test force value, which is then divided by 5 to obtain a value converted to a width of 20 mm.

[0209] The peel force was measured by using a 5N load cell at a tensile speed of 300 mm / min.

[0210] In addition, the above-mentioned test body for measurement after ultraviolet irradiation was mounted on the above-mentioned tensile testing machine as follows.

[0211] (a) On one end side of the test piece for measurement after ultraviolet irradiation, the heat dissipating die-bonding film 10 is peeled off from the adhesive layer 2 by about 1 cm.

[0212] (b) One end side of the test piece for measurement after ultraviolet irradiation is attached to the lower chuck and the upper chuck of the tensile testing machine.

[0213] Specifically, the laminate of the heat dissipating die bond film 10 and the backing tape is mounted on the lower chuck, and the dicing tape 40 (ie, the laminate of the base layer 1 and the adhesive layer 2) is mounted on the upper chuck of the tensile tester.

[0214] The adhesive layer 2 can be obtained by applying the adhesive composition containing the above-mentioned components onto the surface of a resin film or the like using an applicator or the like, and then drying the applied adhesive composition.

[0215] The heat dissipating die-bonding film 10 can be attached to the adhesive layer 2 by laminating the heat dissipating die-bonding film 10 on the adhesive layer 2 produced as described above.

[0216] When the heat dissipating die bond film 10 is laminated on the adhesive layer 2 with the resin film laminated on one surface, the resin film may be peeled off from one surface of the heat dissipating die bond film 10 after lamination.

[0217] The dicing die-bonding film 50 of the present embodiment is used, for example, as an auxiliary tool for manufacturing a semiconductor integrated circuit. Hereinafter, a specific example of the use of the dicing die-bonding film 50 will be described.

[0218] Hereinafter, an example using the dicing die-bonding film 50 including one layer of the base material layer 1 will be described.

[0219] The method for manufacturing a semiconductor integrated circuit includes, for example, the following steps: a half-cutting step of forming a groove in a semiconductor wafer in order to process the semiconductor wafer into a chip (die) by cutting; a back grinding step of grinding the semiconductor wafer after the half-cutting step to reduce the thickness; a mounting step of attaching one side (for example, the side opposite to the circuit side) of the semiconductor wafer after the back grinding step to a heat dissipation die bonding film 10 and fixing the semiconductor wafer to a dicing tape 40; an expansion step of expanding the interval between semiconductor chips; a cut maintenance step of maintaining the interval between semiconductor chips; a pick-up step of peeling the heat dissipation die bonding film 10 from the adhesive layer 2 and taking out the semiconductor chip (die) with the heat dissipation die bonding film 10 attached; and a die bonding step of bonding the semiconductor chip (die) with the heat dissipation die bonding film 10 attached to an adherend. When performing these steps, the dicing tape (dicing die bonding film) of the present embodiment is used as a manufacturing auxiliary tool.

[0220] In the half-cutting process, Figure 4A and Figure 4B As shown in FIG. 1 , a half-cutting process is performed to cut a semiconductor integrated circuit into small pieces (die). Specifically, a wafer processing tape T is attached to the surface of the semiconductor wafer W opposite to the circuit surface, and a dicing ring R is mounted on the wafer processing tape T (see FIG. 1 ). Figure 4A ). A groove for dividing is formed in a state where the wafer processing tape T is attached (refer to Figure 4B ). In the back grinding process, such as Figure 4C and Figure 4D Specifically, the back grinding tape G is attached to the surface where the grooves are formed, and the wafer processing tape T attached first (see FIG. Figure 4C). Grinding is performed with the back grinding tape G attached until the semiconductor wafer W reaches a predetermined thickness (see Figure 4D ).

[0221] During the installation process, Figure 5A to Figure 5B As shown, after the dicing ring R is mounted on the adhesive layer 2 of the dicing tape 40, the semiconductor wafer W (see FIG. 1 ) which has been half-cut is attached to the exposed surface of the heat dissipating die bonding film 10. Figure 5A ). Thereafter, the back grinding tape G is peeled off from the semiconductor wafer W (see Figure 5B ).

[0222] In the expansion process, Figure 6A to Figure 6C As shown, the dicing ring R is fixed to the holder H of the expansion device. The dicing die bonding film 50 is lifted from the bottom by using the lifting member U provided in the expansion device, thereby stretching the dicing die bonding film 50 in a manner of expanding in the surface direction (see Figure 6B ). Thus, the semiconductor wafer W that has been half-cut is cut under specific temperature conditions. The temperature conditions are, for example, -20 to 5°C, preferably -15 to 0°C, and more preferably -10 to -5°C. By lowering the lifting member U, the expanded state is released (see Figure 6C ).

[0223] Furthermore, in the expansion process, Figure 7A to Figure 7B As shown, under a higher temperature condition (for example, room temperature (23±2° C.)), the dicing tape 40 is stretched to expand the area. Thus, the adjacent semiconductor chips that have been cut are pulled apart in the plane direction of the film surface, and the interval is further increased.

[0224] In the incision maintenance process, Figure 8 As shown, hot air (eg, 100 to 130° C. as indicated by the dotted arrow) is blown to the dicing tape 40 to heat shrink the dicing tape 40 and then cool and solidify the dicing tape 40 to maintain the distance (kerf) between the separated adjacent semiconductor chips.

[0225] In the picking process, Fig. 9 As shown, the semiconductor chip with the heat dissipating die-bonding film 10 attached thereto is peeled off from the adhesive layer 2 of the dicing tape 40. Specifically, the pin member P is raised to lift up the semiconductor chip to be picked up through the dicing tape 40. The lifted semiconductor chip is held by a suction jig J.

[0226] In the die bonding step, the semiconductor chip to which the heat dissipating die bonding film 10 is attached is bonded to an adherend.

[0227] It should be noted that the dicing die bonding film of the present invention is not limited to the aforementioned embodiment. In addition, the dicing die bonding film of the present invention is not limited to the aforementioned effects. The dicing die bonding film of the present invention can be variously modified within the scope of the present invention.

[0228] Matters disclosed by this specification include the following. (1)

[0230] A heat dissipating die bonding film is composed of a resin composition, the resin composition comprising a thermosetting resin and a thermoplastic resin as resin components, and an alumina filler as a thermally conductive filler.

[0231] The alumina filler includes a first alumina filler having an average particle size of 0.8 μm or more and 2.6 μm or less,

[0232] The resin composition contains 24 parts by mass or more of the first alumina filler relative to 100 parts by mass of the total of the thermosetting resin, the thermoplastic resin and the alumina filler.

[0233] The heat dissipating die-bonding film has a thermal conductivity of 1.4 W / (m·K) or more.

[0234] According to the above embodiment, it is possible to provide a heat dissipating die-bonding film which can exhibit sufficient heat dissipation, exhibit good conformability to the irregularities on the adherend surface, and has a good appearance. (2)

[0236] The heat dissipating die-bonding film according to (1) above, wherein the first alumina filler has a thickness of 0.5 μm 2 / g or more and 6.0m 2 / g or less specific surface area. (3)

[0238] The heat dissipating die-bonding film according to (1) or (2) above, wherein the melt viscosity of the film measured at 120° C. is 2500 Pa·s or less. (4)

[0240] The heat dissipating die-bonding film according to any one of (1) to (3) above, wherein

[0241] The thermosetting resin comprises at least one of an epoxy resin and a phenolic resin,

[0242] comprising an acrylic polymer as the thermoplastic resin,

[0243] The acrylic polymer has a mass average molecular weight Mw of 400,000 or less, and has a functional group that can react with at least one of the epoxy resin and the phenol resin. (5)

[0245] The heat dissipating die-bonding film according to the above (4), wherein the resin composition contains 3 parts by mass or more and 80 parts by mass or less of the acrylic polymer relative to 100 parts by mass of the total of the thermosetting resin and the thermoplastic resin. (6)

[0247] The heat dissipating die bonding film according to any one of (1) to (5), wherein the alumina filler further includes a second alumina filler having an average particle diameter different from that of the first alumina filler.

[0248] A particle size distribution curve showing a frequency based on a volume of the alumina filler has a first peak top corresponding to the first alumina filler and a second peak top corresponding to the second alumina filler,

[0249] The first peak top exists on the larger particle size side than the second peak top.

[0250] [Example]

[0251] Next, the present invention will be described in more detail with reference to examples. The following examples are provided to further illustrate the present invention in detail, but are not intended to limit the scope of the present invention.

[0252] [Example 1]

[0253] (Heat dissipation die bonding film)

[0254] According to the formulation shown in Table 1, a thermally conductive filler (alumina filler), a resin component (acrylic polymer, epoxy resin, phenolic resin), and a thermosetting catalyst (thermosetting catalyst) are suspended or dissolved in methyl ethyl ketone (MEK) to obtain a first adhesive composition.

[0255] Then, the first adhesive composition was filtered using a 400-mesh (opening 38 μm) twill SUS (stainless steel) mesh to obtain a second adhesive composition, and then the second adhesive composition was applied with a thickness of 20 μm on the silicone release-treated surface of a PET separator (thickness 50 μm) having a silicone release-treated surface using an applicator to form a coating film, which was then subjected to a desolventizing treatment at 120° C. for 2 minutes.

[0256] Thus, a heat-dissipating die-bonding film having a thickness (average thickness) of 20 μm was produced on the PET separator.

[0257] That is, the heat-dissipating die-bonding film with a PET separator of Example 1 was obtained.

[0258] In addition, the details of each raw material component (shown in Table 1) used in each of the following examples and comparative examples are as follows.

[0259] Alumina filler

[0260] ·Alumina filler a1

[0261] Sumitomo Chemical Co., Ltd., trade name "Sumicorundum AA-1.5" (average particle size 1.7 μm, specific surface area 1.3 m 2 / g)

[0262] ·Alumina filler a2

[0263] The product obtained by surface-treating "Sumicorundum AA-1.5" manufactured by Sumitomo Chemical Co., Ltd. with "KBM-403" manufactured by Shin-Etsu Chemical Co., Ltd. (a silane coupling agent having an epoxy group)

[0264] ·Alumina filler b

[0265] Sumitomo Chemical Co., Ltd., trade name "Sumicorundum AA-2" (average particle size 2.1 μm, specific surface area 1.1 m 2 / g)

[0266] ·Alumina filler c

[0267] Sumitomo Chemical Co., Ltd., trade name "Sumicorundum AA-5" (average particle size 5.0 μm, specific surface area 0.4 m 2 / g)

[0268] Alumina filler d

[0269] Sumitomo Chemical Co., Ltd., trade name "Sumicorundum AA-03" (average particle size 0.3 μm, specific surface area 5.0 m 2 / g)

[0270] ·Alumina filler e1

[0271] Shin-Etsu Chemical Co., Ltd.'s trade name "KBM-403" was used to compare Denka Co., Ltd.'s trade name "DAM-03" (average particle size 3 μm, specific surface area 0.4 m 2 / g) is obtained by surface treatment

[0272] ·Alumina filler e2

[0273] The surface of "DAM-03" manufactured by Denka Co., Ltd. was treated with "KBM-503" manufactured by Shin-Etsu Chemical Co., Ltd. (a silane coupling agent having a methacryloyl group).

[0274] ·Alumina filler

[0275] The product name "KBM-503" manufactured by Shin-Etsu Chemical Co., Ltd. was used to compare the product name "AO-502" (spherical, average particle size 0.6 μm, specific surface area 4.6 m 2 / g) is obtained by surface treatment

[0276] Thermoplastic resin

[0277] Acrylic polymer a

[0278] Trade name "SG-70L" manufactured by Nagase ChemteX Corporation (mass average molecular weight 800,000, acid value 5)

[0279] Acrylic polymer b

[0280] Copolymer of acrylonitrile (AN) and acrylic acid (AA), butyl acrylate (BA), and ethyl acrylate (EA) (AN / AA / BA / EA=35 / 0.5 / 37 / 25, mass average molecular weight 150,000, acid value 2)

[0281] ·Acrylic polymer c

[0282] Copolymer of acrylonitrile (AN) and acrylic acid (AA), butyl acrylate (BA), and ethyl acrylate (EA) (AN / AA / BA / EA=35 / 1 / 37 / 25, mass average molecular weight 50,000, acid value 5)

[0283] Thermosetting resin

[0284] ·Epoxy resin a

[0285] Mitsubishi Chemical Corporation, trade name "JER828" (epoxy equivalent about 190 g / eq)

[0286] Phenolic resin a

[0287] Trade name "MEHC-8751SS" manufactured by Meiwa Chemicals Co., Ltd. (hydroxyl equivalent 203 g / eq)

[0288] Thermal Curing Catalyst

[0289] Thermal curing catalyst

[0290] Trade name "2PHZ" (imidazole series) manufactured by Shikoku Chemical Co., Ltd.

[0291] The surface treatment of the alumina filler with a silane coupling agent is performed by a dry method.

[0292] In addition, the amount of the silane coupling agent is determined based on the following formula.

[0293] ·Amount of silane coupling agent = [mass of alumina filler (g) × specific surface area of ​​alumina filler (m 2 / g)] / Minimum coverage area of ​​silane coupling agent (m 2 / g)

[0294] Minimum coverage area of ​​silane coupling agent (m 2 / g)=6.02×10 23 ×13×10 -20 / Molecular weight of silane coupling agent

[0295] (Dicing Die Bonding Film)

[0296] <Synthesis of Acrylic Polymer for Adhesive Layer>

[0297] In a reaction vessel equipped with a condenser, a nitrogen inlet tube, a thermometer and a stirring device, a mixture containing 98 mol parts of 2-ethylhexyl acrylate (2EHA), 20 mol parts of 2-hydroxyethyl acrylate (HEA), benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent was stirred at 60°C for 10 hours under a nitrogen atmosphere (polymerization reaction).

[0298] In this mixture, the content of benzoyl peroxide was 0.4 parts by mass based on 100 parts by mass of the monomer component, and the content of toluene was 80 parts by mass based on 100 parts by mass of the monomer component.

[0299] Through the above-mentioned polymerization reaction, a first polymer solution containing a first acrylic polymer is obtained.

[0300] Next, 16 parts by mole of 2-methacryloyloxyethyl isocyanate (MOI) was added to the first polymer solution, and then the mixture was stirred at 50° C. for 60 hours in an air atmosphere (addition reaction).

[0301] Thus, a second polymer solution containing a second acrylic polymer having a methacryloyl group in a side chain is obtained.

[0302] <Preparation of Adhesive Composition>

[0303] In the second polymer solution, 0.05 parts by mass of a crosslinking agent (trade name "CORONATE L", a polyisocyanate compound, manufactured by Tosoh Corporation) and 2 parts by mass of a first photopolymerization initiator (trade name "Irgacure 127", manufactured by BASF Corporation) were added and mixed with respect to 100 parts by mass of the second acrylic polymer to obtain an adhesive composition.

[0304] <Production of cutting tape>

[0305] The adhesive composition was applied to the silicone release treated surface of a PET separator (50 μm thick) having a silicone release treated surface using an applicator and dried at 120° C. for 2 minutes to form an adhesive layer having a thickness of 10 μm.

[0306] Thereafter, a film made of ethylene-vinyl acetate copolymer (EVA) (trade name "RB0103", thickness 125 μm, manufactured by Kurabo Co., Ltd.) was bonded onto the adhesive layer at room temperature as a substrate layer.

[0307] As described above, the diced tape of Example 1 was obtained.

[0308] <Production of Dicing Die Bonding Film>

[0309] First, the heat-dissipating die-bonding film with a PET separator of Example 1 was punched out into a circular shape with a diameter of 330 mm.

[0310] Next, the PET spacer was removed from the dicing tape of Example 1 to expose one surface of the adhesive layer, and the exposed surface of the heat-dissipating die-bonding film with the PET spacer was overlapped with the exposed surface of the adhesive layer at room temperature (23±2° C.).

[0311] Then, the laminate was bonded together using a roll laminator to obtain a laminate, and the laminate was punched out into a circular shape having a diameter of 370 mm to obtain a dicing die-bonding film of Example 1.

[0312] That is, the dicing tape of Example 1 is composed of a film made of ethylene-vinyl acetate copolymer (EVA), an adhesive layer, a heat-dissipating die-bonding film, and a PET separator laminated in this order.

[0313] The lamination using the roll laminator was performed under the conditions of a lamination speed of 10 mm / sec, a temperature of 23±2° C., and a pressure of 0.15 MPa.

[0314] [Examples 2 to 13]

[0315] (Heat dissipation die bonding film)

[0316] Except that the blending of the thermally conductive filler, the resin component, and the thermosetting catalyst was changed as shown in Table 1, the same operation as in Example 1 was carried out to obtain a heat dissipating die-bonding film with a PET separator of each example.

[0317] (Dicing Die Bonding Film)

[0318] It carried out similarly to Example 1, and obtained the dicing die-bonding film of each Example.

[0319] [Comparative Examples 1 to 6]

[0320] (Heat dissipation die bonding film)

[0321] Except having changed the compounding amount of the thermally conductive filler, the resin component, and the thermosetting catalyst as shown in Table 1, it carried out similarly to Example 1, and obtained the heat dissipating die-bonding film with PET separator of each comparative example.

[0322] (Dicing Die Bonding Film)

[0323] It carried out similarly to Example 1, and obtained the dicing die-bonding film of each comparative example.

[0324] [Table 1]

[0325]

[0326] (Coating properties)

[0327] When the heat dissipating die-bonding film of each example was produced, the coating property of the second adhesive composition on the PET separator was examined.

[0328] The coating properties were judged according to the following criteria.

[0329] Good: No defect in the appearance of the obtained heat-dissipating die-bonding film due to repulsion or streaks during coating was visually confirmed.

[0330] No: The obtained heat dissipating die-bonding film was visually confirmed to have a poor appearance.

[0331] Table 2 shows the results of the evaluation of coating properties.

[0332] (Appearance)

[0333] The appearance of the heat dissipating die-bonding film of each example was examined.

[0334] Appearance was judged according to the following criteria.

[0335] Good: When the heat dissipating die-bonding film was visually observed, no aggregates or coarse alumina fillers were observed.

[0336] No: Aggregates or coarse alumina fillers are observed when the heat dissipating die-bonding film is visually inspected.

[0337] Table 2 shows the results of the evaluation of the appearance.

[0338] (Heat dissipation)

[0339] The heat dissipation properties of the heat dissipating die-bonding films of the respective examples were examined.

[0340] Regarding the heat dissipation property, the thermal conductivity of the die-bonding film of each example was measured, and the heat dissipation property was determined based on the measured value according to the following criteria.

[0341] Good: The value of thermal conductivity is 2.0 W / (m·K) or more.

[0342] Good: The value of thermal conductivity is 1.4 W / (m·K) or more and 2.0 W / (m·K) or less.

[0343] Possible: The value of thermal conductivity is 1.0 W / (m·K) or more and less than 1.4 W / (m·K).

[0344] Unacceptable: The thermal conductivity value is less than 1.0 W / (m·K).

[0345] Table 2 shows the results of the evaluation of heat dissipation.

[0346] (cutting off)

[0347] A semiconductor wafer (12 inches (300 mm) in plane size and 0.060 mm in thickness. The semiconductor wafer is cut into multiple semiconductor chips of 10 mm in length and 5 mm in width by DBG) and a cutting ring are attached to the cutting chip bonding film of each example. Next, a die separator DDS2300 (manufactured by DISCO Inc.) is used to cut the semiconductor wafer and the heat dissipating chip bonding film (mainly the chip bonding film), and the cutting property of the heat dissipating chip bonding film is evaluated.

[0348] It should be noted that the semiconductor wafer is divided into the size of semiconductor chips cut by DBG (length 10 mm×width 5 mm×thickness 0.060 mm) by the above-mentioned cutting.

[0349] The splitting properties of the heat dissipating die-bonding film were evaluated in detail as follows.

[0350] First, the semiconductor wafer and the heat dissipating die-bonding film were cut by a cold expansion unit at an expansion temperature of -15°C, an expansion speed of 200 mm / sec, and an expansion distance of 15 mm to obtain semiconductor chips with heat dissipating die-bonding films.

[0351] Next, the wafer was expanded at room temperature, an expansion speed of 1 mm / sec, and an expansion distance of 7 mm. Then, the dicing die bonding film was thermally shrunk at the boundary with the outer periphery of the bare wafer at a heating temperature of 250°C, a heating distance of 20 mm, and a rotation speed of 5° / sec while maintaining the expanded state.

[0352] Next, the cut portion of the semiconductor chip with a heat dissipating die-bonding film was observed using a microscope, and the cut property was evaluated based on the following criteria.

[0353] Good: No portion where adjacent heat dissipating die-bonding films adhered to each other was observed.

[0354] No: Just confirm one location where adjacent heat dissipating die-bonding films are attached to each other.

[0355] Table 2 shows the results of the evaluation of the splitting properties.

[0356] (Adaptability to uneven surfaces and embeddability)

[0357] Using the semiconductor chip with a heat dissipating die-bonding film obtained in the above evaluation of the splitting property, embedding property in a BGA (ball grid array) substrate was evaluated.

[0358] Specifically, the evaluation was performed according to the following steps.

[0359] (1) Using a die bonding apparatus (DB830Plua+, manufactured by Fasford), the semiconductor chip with the heat dissipating die bonding film was die bonded to one surface of the BGA substrate (AUS308, 100 μm thick, 8 μm unevenness) at 120°C, 0.2 MPa, and 1 second, and then heated in a pressurized oven at 140°C, 7 kg / cm 2 The heat dissipating die-bonding film is thermally cured under the conditions of 20 ℃ and 30 minutes.

[0360] Thus, a test body for evaluation was obtained.

[0361] (2) After the evaluation test body is cooled to room temperature, the ratio of the total area of ​​voids formed between one surface of the BGA substrate and the exposed surface of the heat dissipating die bonding film to the total area of ​​one surface of the semiconductor chip is determined using SAT in the transmission mode.

[0362] (3) The embedding properties were evaluated according to the following evaluation criteria.

[0363] Excellent: The above ratio is less than 1%

[0364] Good: The above ratio is more than 1% and less than 10%

[0365] No: The above ratio exceeds 10%

[0366] Table 2 shows the results of evaluation of embedding properties.

[0367] (Pickup)

[0368] The pickup property of the semiconductor chip with the heat dissipating die-bonding film in the cut state was evaluated.

[0369] The semiconductor chip with the heat dissipating die-bonding film in a cut state is obtained by the following steps.

[0370] (1) A back grinding tape was attached to a 12-inch bare wafer (300 mm in diameter, 55 μm in thickness) on the surface having the dividing grooves (10 mm×10 mm) formed thereon by half cutting.

[0371] (2) The 12-inch bare wafer was ground from the side opposite to the side on which the back grinding tape was affixed to a thickness of 25 μm using a back grinder (manufactured by DISCO Corporation, model DGP8760) to obtain a back-ground bare wafer.

[0372] (3) The heat dissipating die bonding film of each example of the dicing die bonding film was bonded to the side of the back-ground bare wafer opposite to the side to which the back grinding tape was bonded, thereby obtaining a bare wafer with a dicing die bonding film.

[0373] (4) The wafer is obtained by expanding the bare wafer with the dicing die-bonding film using a die separation device (trade name: "Die Separator DDS3200", manufactured by DISCO Inc.).

[0374] It should be noted that the expansion using the chip separation device is performed in a state where the back grinding tape is peeled off from the bare wafer.

[0375] In the expansion using the chip separation device, cold expansion is performed and then room temperature expansion is performed.

[0376] Cold expansion is performed according to the following steps.

[0377] (1) A SUS ring frame (manufactured by DISCO Inc.) having a diameter of 12 inches was attached to a frame attaching region on the adhesive layer of the dicing die bonding film attached to the bare wafer at room temperature.

[0378] (2) The bare wafer to which the SUS ring frame is attached is mounted on a die separation device, and the dicing tape for dicing the die-bonding film is expanded by a cold expansion unit of the die separation device.

[0379] (3) Cold expansion was carried out at an expansion temperature of -15°C, an expansion speed of 100 mm / s, and an expansion amount of 7 mm.

[0380] It should be noted that after cold expansion, the semiconductor wafer is singulated into a plurality of semiconductor chips, and the heat dissipating die-bonding film is also singulated into pieces of a size equivalent to the semiconductor chips, thereby obtaining a plurality of semiconductor chips with heat dissipating die-bonding films.

[0381] The room temperature expansion is performed by expanding the dicing tape for dicing the die-bonding film using the room temperature expansion unit of the die separation apparatus after the cold expansion.

[0382] Normal temperature expansion is carried out under the conditions of expansion temperature 23±2°C, expansion speed 1mm / sec, and expansion amount 10mm.

[0383] The dicing tape expanded at room temperature was subjected to heat shrinkage treatment at a temperature of 200° C. and a time of 20 seconds.

[0384] After the dicing tape was heated and shrunk, a pickup test of the singulated semiconductor chips with heat dissipating die-bonding films was performed using a device having a pickup mechanism (trade name "Die Bonder SPA-300", manufactured by Shinkawa).

[0385] In the above-mentioned device having the pickup mechanism, the lifting speed by the pin member was set to 1 mm / sec, and the lifting amount was set to 2000 μm.

[0386] The pickup test was conducted using a Nitto Seiki Co., Ltd. trade name "UM-810" (high pressure mercury lamp, 60 mW / cm 2 ) Irradiation intensity from the dicing tape side: 150 J / cm 2 The process is carried out after the adhesive layer is cured by ultraviolet rays.

[0387] The pickup test was performed on five semiconductor chips with heat dissipating die-bonding films, and the pickup properties were judged based on the following criteria.

[0388] Good: All five semiconductor chips with die bonding layers can be picked up.

[0389] No: If at least one of the five semiconductor chips with a die bond layer cannot be picked up.

[0390] Table 2 shows the results of the evaluation of the pickup properties.

[0391] In addition, the heat dissipating die-bonding film of each example was measured for thermal conductivity, melt viscosity at 120° C., elongation at break at −15° C., and peel strength of the pressure-sensitive adhesive layer after ultraviolet irradiation.

[0392] In Table 2, the melt viscosity at 120° C. is referred to as “120° C. viscosity”, the elongation at break at −15° C. is referred to as “elongation”, and the peel strength of the pressure-sensitive adhesive layer after ultraviolet irradiation is referred to as “peel strength”.

[0393] The thermal conductivity, melt viscosity at 120° C., elongation at break at −15° C., and peel strength of the pressure-sensitive adhesive layer after ultraviolet irradiation were determined by the methods described in the embodiments.

[0394] [Table 2]

[0395]

[0396] As can be seen from Table 2, in the heat dissipating die-bonding films of the respective Examples, the evaluation results of any of the heat dissipation property, the conformability to irregularities (embedding property), and the appearance were all good.

[0397] On the other hand, it can be seen that the heat dissipating die-bonding films of the comparative examples were evaluated as poor in at least one of heat dissipation, conformability to irregularities (embedding properties), and appearance.

Claims

1. A heat dissipating die-bonding film, comprising a resin composition comprising a thermosetting resin and a thermoplastic resin as resin components, and an alumina filler as a thermally conductive filler, The alumina filler includes a first alumina filler having an average particle size of 0.8 μm or more and 2.6 μm or less, The resin composition contains 24 parts by mass or more of the first alumina filler relative to 100 parts by mass of the total of the thermosetting resin, the thermoplastic resin, and the alumina filler. The heat dissipating die-bonding film has a thermal conductivity of 1.4 W / (m·K) or more.

2. The heat dissipating die-bonding film according to claim 1, wherein The first alumina filler has a thickness of 0.5 μm 2 / g or more and 6.0m 2 / g or less specific surface area. 3 . The heat-dissipating die-bonding film according to claim 1 , wherein the melt viscosity of the film measured at 120° C. is 2500 Pa·s or less.

4. The heat dissipating die-bonding film according to claim 1 or 2, wherein The thermosetting resin comprises at least one of an epoxy resin and a phenolic resin, comprising an acrylic polymer as the thermoplastic resin, The acrylic polymer has a mass average molecular weight Mw of 400,000 or less, and has a functional group that can react with at least one of the epoxy resin and the phenolic resin.

5. The heat dissipating die-bonding film according to claim 4, wherein The resin composition includes 3 parts by mass or more and 80 parts by mass or less of the acrylic polymer relative to 100 parts by mass of the total of the thermosetting resin and the thermoplastic resin.

6. The heat dissipating die-bonding film according to claim 1 or 2, wherein The alumina filler further includes a second alumina filler having an average particle size different from that of the first alumina filler, A particle size distribution curve representing a frequency based on a volume of the alumina filler has a first peak top corresponding to the first alumina filler and a second peak top corresponding to the second alumina filler, The first peak top exists on the larger particle size side than the second peak top.

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