Touch screen grid conductive structure and preparation method thereof

Abstract

The invention provides a touch screen grid conductive structure, a first metal wire comprises a first main body part far away from an intersection point, the first metal wire further comprises at least one of a first end part close to the intersection point or a first bending part located between the first end part and the first main body part, the line width of the first end part is smaller than that of the first main body part, and the line width of the first bending part is smaller than that of the first main body part. The first bending part is arranged in a bending manner, and the second metal wire comprises a second main body part far away from the intersection point, so that the sum of two adjacent included angles formed between the first metal wire and the second metal wire is larger than 180 degrees. This is achieved due to the combined action of the design of the photomask and the manufacturing process. As the line width of the metal line at the intersection is reduced or bent, a relatively large flow inlet can be provided for the etching liquid. Meanwhile, due to the fact that the metal wires are thinned and light transmission is incomplete during exposure, curing of a dry film is insufficient, subsequent excessive development is caused, the etching area is further enlarged, more metal is etched, and therefore the area of the node is reduced.

Description

Technical Field

[0001] The present disclosure relates to the field of grid conductive technology, and in particular, to a touch screen grid conductive structure and a preparation method thereof. Background Art

[0002] The emergence of grid conductive structures, especially metal grid conductive structures, not only has good conductivity for electronic devices, but also has fast response speed, high accuracy and good display effect.

[0003] However, a large node (hereinafter referred to as an intersection) is formed at the intersection of two metal wires, which is not only prone to reflection or black spots, affecting the display effect of the electronic device, but also causes signal interference and noise, affecting the sensitivity and response speed of the electronic device, and bringing a bad user experience. Summary of the invention

[0004] In view of this, the present disclosure provides a touch screen grid conductive structure and a preparation method thereof, aiming to improve the problem that nodes in the grid conductive structure greatly affect the user experience.

[0005] In a first aspect, the present disclosure provides a touch screen grid conductive structure, comprising a first metal wire and a second metal wire arranged in the same layer and connected to each other, the first metal wire and the second metal wire are arranged in an interlaced manner to form an intersection, the first metal wire comprises a first main body away from the intersection, the first metal wire further comprises at least one of a first end close to the intersection or a first bent portion between the first end and the first main body, the line width of the first end is smaller than that of the first main body, the first bent portion is bent, and the second metal wire comprises a second main body away from the intersection, so that the sum of two adjacent angles formed between the first metal wire and the second metal wire is greater than 180°.

[0006] This is because the design of the mask and the manufacturing process work together to obtain the sum of the two adjacent angles formed between the metal wires to be greater than 180°. Specifically, since the line width of the metal wires is reduced or bent at the intersection, it is beneficial to provide a relatively large flow inlet for the etching solution, thereby reducing the flow resistance of the etching solution, so that the flow path of the etching solution often appears curved. At the same time, as the metal wires become thinner, it will cause incomplete light transmission during exposure, resulting in insufficient curing of the dry film, resulting in subsequent over-development, causing the etching area to further expand, further improving the etching ability near the intersection, making the etching path near the intersection further bend and increase, and more metal is etched, thereby reducing the area at the node.

[0007] In a second aspect, the present disclosure provides a touch module, comprising the above-mentioned touch screen grid conductive structure.

[0008] In a third aspect, the present disclosure provides a sensor, comprising the above-mentioned touch screen grid conductive structure.

[0009] In a fourth aspect, the present disclosure provides a photomask comprising the above-mentioned touch screen grid conductive structure.

[0010] In a fifth aspect, the present disclosure provides a method for preparing a grid conductive structure of a touch screen, comprising: setting a conductive material on a substrate; setting a photoresist material on the conductive material; setting the above-mentioned photomask on the photoresist material, exposing and developing the photoresist material to form a patterned photoresist layer; the patterned photoresist layer comprises a first metal wire and a second metal wire which are arranged in the same layer and connected to each other, the first metal wire and the second metal wire are staggered to form an intersection, the first metal wire comprises a first end close to the intersection and a first main body away from the intersection, the line width of the first end is smaller than the first main body, and / or the second metal wire comprises a second end close to the intersection and a second main body away from the intersection, the line width of the second end is smaller than the second main body, so that the angle between the first metal wire and the second metal wire is a right angle or an obtuse angle; etching the grid conductive structure formed by the conductive material; and removing the patterned photoresist layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] It should be understood that the following drawings only illustrate certain embodiments of the present disclosure and should not be viewed as limiting the scope.

[0012] It should be understood that the same or similar reference numerals are used in the drawings to indicate the same or similar elements.

[0013] It should be understood that the drawings are merely schematic and that the sizes and proportions of elements in the drawings are not necessarily accurate.

[0014] Figure 1 The figure is a schematic diagram of a grid conductive structure and a node in the related art.

[0015] Figure 2 for Figure 1 Actual effect diagram and structural diagram of the mid-node.

[0016] Figure 3 A schematic structural diagram of a photomask provided in one embodiment of the present disclosure.

[0017] Figure 4 Based on Figure 3 The actual effect of observing the nodes under a microscope after the mask is manufactured.

[0018] Figure 5 for Figure 4 Enlarged view of the local structure at the midpoint.

[0019] Figure 6 A schematic structural diagram of a photomask provided in one embodiment of the present disclosure.

[0020] Figure 7 Based on Figure 6 The actual effect of observing the nodes under a microscope after the mask is manufactured.

[0021] Figure 8 A schematic structural diagram of a photomask provided in one embodiment of the present disclosure.

[0022] Fig. 9 Based on Figure 8 The actual effect of observing the nodes under a microscope after the mask is manufactured.

[0023] Fig.10 A schematic structural diagram of a photomask provided in one embodiment of the present disclosure.

[0024] Fig.11 for Fig.10 The actual effect of observing the nodes under a microscope after the mask is manufactured.

[0025] Fig.12 The present invention is a flow chart of a method for preparing a touch screen grid conductive structure according to an embodiment of the present invention.

[0026] Fig.13 for Fig.12 An intermediate structure diagram corresponding to step S10 in the process of preparing the touch screen grid conductive structure.

[0027] Fig.14 for Fig.12 An intermediate structure diagram corresponding to step S20 in the preparation process of the touch screen grid conductive structure.

[0028] Fig.15 for Fig.12 An intermediate structure diagram corresponding to step S30 in the preparation process of the touch screen grid conductive structure.

[0029] Fig.16 for Fig.12 An intermediate structure diagram corresponding to step S40 in the preparation process of the touch screen grid conductive structure.

[0030] Fig.17 for Fig.12 FIG. 4 is an intermediate structure diagram corresponding to step S50 in the process of preparing the touch screen grid conductive structure. DETAILED DESCRIPTION

[0031] For ease of understanding, the mesh conductive structure provided by the embodiment of the present disclosure is exemplified below in conjunction with specific embodiments and their accompanying drawings. It should be understood that the present disclosure can be implemented in a variety of ways and should not be construed as being limited to the embodiments described herein, which are only provided for a more thorough and clear understanding of the present disclosure.

[0032] An embodiment of the present disclosure provides a touch screen grid conductive structure 100 (hereinafter referred to as the grid conductive structure), which is widely used in electronic devices. For example, the grid conductive structure 100 can be applied to a touch module, a display panel, or a sensor. For ease of understanding, the structure of the grid conductive structure 100 is illustrated below. It should be understood that the overall structure of the grid conductive structure 100 should not be limited to the following description. For example, one or several of the elements introduced below can be omitted, or can be replaced, and the layout relationship between them can be replaced.

[0033] refer to Figure 1 and Figure 2 , the grid conductive structure 100 may include a first metal wire 110 and a second metal wire 120 that are arranged in the same layer and connected to each other. The first metal wire 110 and the second metal wire 120 may be made of the same or different metal wires, for example, copper. The line width and thickness of the first metal wire 110 and the second metal wire 120 may be flexibly designed as needed. For example, if the grid conductive structure is located in the display area, in order to improve the transmittance, the line width of the first metal wire and the second metal wire may be no greater than 8μm. Preferably, the line width of the first metal wire and the second metal wire is no less than 3μm and no greater than 7μm, for example, 3μm and 5μm, and the thickness is no greater than 1μm.

[0034] Continue to refer Figure 1 The first metal wire 110 and the second metal wire 120 are arranged in a staggered manner to form an intersection 130, and an obtuse angle α and an acute angle β are formed between adjacent metal wires. It is found in the manufacturing process that a web-like structure ABCD with a larger area is formed at the intersection 130 (refer to Figure 2 ), the larger webbed structure ABCD will cause certain reflections, seriously affecting the user experience and visual effects, and even seriously affecting the response speed and performance of electronic components.

[0035] After research, it was found that the formation of nodes of the surface structure was caused by the inability of the etching liquid to fully contact the metal layer at the intersection 130. Further analysis showed that the etching liquid was viscous, which limited the mobility of the etching liquid during the flow process, especially at the acute angle β of the intersection. The space at the acute angle β was narrow, and the flow of the etching liquid was further restricted, and it was unable to effectively penetrate deep into the acute angle β. This flow restriction led to the formation of a large area of ​​webbed structures in these areas, affecting the uniformity and quality of etching.

[0036] In order to reduce the area of ​​the webbed structure at the node, refer to Figure 4 and Figure 7 The first metal wire 110 includes a first main body portion 113 away from the intersection 130, and the first metal wire 110 may also include a first end portion 111 near the intersection 130 (refer to Figure 4Alternatively, the first metal wire 110 may further include a first bent portion 212 located between the first end portion 211 and the first main body portion 113 (see Figure 7 Of course, the first metal wire 110 may further include a first end portion 211 of the intersection 130 and a first bent portion 212 located between the first end portion 211 and the first main body portion 113 (see Figure 7 ). The line width of the first end portion 111 or 211 is smaller than that of the first main body portion 113, and the first curved portion 212 is bent. Figure 4 , d11 = 2 μm (near the intersection 130), d13 = 5 μm. Fig. 9 For example, the line width of the first metal line 110 is 5 μm, and the width of the node is 1 μm (near the intersection 130). The line width may be changed continuously or discontinuously, which is not specifically limited here.

[0037] Continue to refer Figure 4 and Figure 7 The second metal line 120 includes a second main body 123 away from the intersection 232, so that the sum of two adjacent angles formed between the first metal line and the second metal line is greater than 180°.

[0038] Understandable, reference Figure 4 , γ1 and γ2 are two adjacent angles formed between the first metal wire 110 and the second metal wire 120, respectively, and are formed by the reverse extension lines of the arc. Obviously, the angles of γ1 and γ2 are significantly larger than before the metal wire changes, and the sum of γ1 and γ2 is greater than 180°. For example, for the first metal wire including the first end, refer to Figure 4 , d21 = 2 μm (near the intersection 130), d23 = 5 μm. For example, for the first metal line including the first bending portion, refer to Figure 7 , γ is the angle formed by the first metal wire and the second metal wire. Obviously, γ is significantly larger than before the first metal wire is bent, so that the sum of the angles formed is greater than 180°. For the first metal wire including the first bending portion and the first end portion, as an example, refer to Fig. 9 The line width of the first end portion 311 near the intersection 133 is 1 μm, and the line width of the first main body portion 113 is 5 μm. Compared with the metal wire before the change, the angles of γ3 and γ4 are significantly larger, and the sum of γ3 and γ4 is greater than 180°.

[0039] This is because the design of the mask and the manufacturing process work together to make the sum of the two adjacent angles formed between the metal wires greater than 180°. Specifically, since the line width of the metal wires is reduced or the curved design at the intersection is conducive to providing a relatively large flow inlet for the etching liquid, thereby reducing the flow resistance of the etching liquid, so that the flow path of the etching liquid often appears curved. At the same time, because the metal wires become thinner, it will cause incomplete light transmission during exposure, resulting in insufficient curing of the dry film, resulting in subsequent over-development, causing the etching area to further expand, further improving the etching ability near the intersection, and making the etching path near the intersection further bend and increase, so that more metal is etched, which helps to further reduce the area at the node.

[0040] Smaller node areas help reduce the reflectivity of the touch screen and increase the density of the grid conductive structure, thereby increasing the response rate of the grid conductive structure and further improving the user experience. In this way, the structural design of the mask and the manufacturing process work together to not only optimize the efficiency and effect of the etching process, but also help improve the performance of the grid conductive structure.

[0041] It can be understood that, through reasonable design, only one of the first metal wire 110 and the second metal wire 120 can be thinned or bent, so as to increase the angle formed by the first metal wire and the second metal wire, thereby reducing the area of ​​the node.

[0042] Preferably, the line widths of the first metal line and the second metal line are both reduced, which is more conducive to increasing the angle at the node, thereby helping to further reduce the area at the node. In addition, the larger the angle between the first metal line 110 and the second metal line 120, the better the etching effect and the smaller the node area. Figure 4 According to the structure observed under a microscope, the actual area S of the intersection 130 is 47.9um 2 .

[0043] Continue to refer Figure 4 , the length d1 of the orthographic projection of the first end 111 of the first metal wire 110 satisfies: 5μm≤d1≤20μm, and the length d2 of the orthographic projection of the second end satisfies: 5μm≤d2≤20μm. For example, d1 can be 5μm, 7μm, 10μm, 12μm, 15μm or 20μm, without specific limitation; d2 can be 5μm, 7μm, 10μm, 12μm, 15μm or 20μm, without specific limitation. As an example, the lengths d1 and d2 of the orthographic projections of the first end and the second end are approximately 6.6μm (reference Figure 4 ). In order to further obtain a larger angle at the intersection, refer to Figure 7The length of the orthographic projection of the first curved portion 212 is 0 μm≤L2≤20 μm, the first metal wire 110 and the second metal wire 120 form two intersections 232 , and a distance d78 between the two intersections is not less than 10 μm and not more than 50 μm.

[0044] As an example, see Figure 7 The first main body 113 includes a first bent portion 212 close to the first end portion 211, and the length d75 of the orthographic projection of the first bent portion 212 is ≈16 μm. Moreover, after the first metal wire 110 is exposed, developed, and etched, the original node is split into two nodes 232 with smaller areas, which is beneficial to reducing the area of ​​the node, and the distance between the two nodes 232 will not change due to the process.

[0045] In this way, the angle γ formed by the first metal wire 110 and the second metal wire 120 after bending is significantly larger than that before bending, and the sum of the two adjacent angles formed is greater than 180°. Moreover, after bending, a larger area is split into two smaller nodes, which is conducive to further improving the visual effect and user experience.

[0046] Preferably, continue to refer to Figure 7 When the first metal wire is bent, the line width of the first end portion 211 and the second end portion 121 is thinner than the first main body portion 113 and the second main body portion 123, and the length of the orthographic projection of the first end portion 211 is d71≈8μm (wherein the length of d71 may be not less than 4.1μm and not more than 12.3μm, and the length of the thinning line width along the length direction of the first metal wire may be not less than 5μm and not more than 15μm). In this way, the angle formed between the first metal wire 110 and the second metal wire 120 is significantly enlarged, and the sum of adjacent angles is greater than 180°.

[0047] refer to Fig. 9 In some other embodiments, the first main body 113 of the first metal wire 110 includes a first bend 312 near the first end 311, and the second main body 123 of the second metal wire 120 includes a second bend 122 near the second end 321. In this way, the sum of the two adjacent angles formed between the first metal wire and the second metal wire is greater than 180°, further reducing the area at the node 133, which is conducive to further improving the visual effect and user experience. At this time, the actual area S of the node 133 is 47.4639um 2 .

[0048] Continue to refer Fig. 9, the length d1'(d3) of the orthographic projection of the first end 311 of the first metal wire 110 satisfies: 11μm≤d1'≤17μm, and the length d91 of the orthographic projection of the second end 321 also satisfies: 11μm≤d91≤17μm. For example, d3 can be 11μm, 12μm, 13μm, 14μm, 15μm, 16μm or 17μm, which is not specifically limited here; d91 can be 11μm, 12μm, 13μm, 14μm, 15μm, 16μm or 17μm, which is not specifically limited here. Among them, the width L91 near the node 133 can be 10μm to 30μm (it can include a single thinning portion, a single bending portion, or both bending and thinning portions).

[0049] Combination Figure 7 and Fig. 9 The length of the orthographic projection of the first curved portion and the length of the orthographic projection of the second curved portion are less than 200 μm, which is not specifically limited here. Figure 7 The length d75 of the orthographic projection of the first curved portion is approximately 13.12 μm (the length along its own extension direction is 24 μm). Fig. 9 The length d7 of the orthographic projection of the first curved portion is approximately 1.57 μm. It should be noted that the length d7 may be 0 to 20 μm.

[0050] Combination Figure 4 , Figure 7 , Fig. 9 and Fig.11 In order to achieve the effect of reducing the area at the node, the area S of the node 130 satisfies: 30μm 2 ≤S≤100μm 2 Too large a node area will bring about a negative visual effect, while too small a node area will make the line width at the connection between the first end and the second end and the node 130 too small, which may easily cause a break at this point, thus seriously affecting the user experience. For example, the area S of the node 130 may be 30 μm 2 , 40μm 2 , 50μm 2 、80μm 2 or 100μm 2 Etc., no specific limitation is given here. For example, refer to Figure 4 The area S of the intersection is 47.9um 2 . refer to Fig. 9 , the area S of the intersection 133 is 47.4639um 2 In one example, reference Fig.11 , d can be less than 6μm, d8≈8.29μm, d9≈3.97μm, d10≈5.85μm, and the sum of γ5 and γ6 is greater than 180°.

[0051] Since the graph formed by the nodes is a diamond, in order to ensure the area at the node, it is only necessary to ensure that the length of the diagonal inside the node is 1μm≤a<3μm. If the diagonal a≥3μm, not only will black spots appear under strong light, but reflection will also occur, seriously affecting the visual effect; if the diagonal is less than 1μm, the line width at the connection between the first end and the second end and the intersection 130 is too small, and it is easy to break the line here. For example, the diagonal a can be 1μm, 1.5μm, 2μm and 2.5μm, and no specific limitation is made here.

[0052] Preferably, reference Fig. 9 , and the diagonal is 1 μm. Such a design is not only conducive to reserving enough space for the etching solution to etch the metal, but also can prevent wire breakage, thereby improving the reliability of the grid conductive structure.

[0053] In order to avoid the appearance of moiré, the first metal wire and the second metal wire forming the node can be bent, reduced in line width or in other ways to form a right angle, thereby improving visual clarity. Preferably, the surface structure is a square, and its area is relatively small, so the node is also relatively small.

[0054] The present disclosure also discloses a touch module, comprising the above-mentioned grid conductive structure, thus having the advantages of the above-mentioned grid conductive structure.

[0055] The present disclosure also discloses a sensor, comprising the above-mentioned grid conductive structure, thus having the advantages of the above-mentioned grid conductive structure.

[0056] In order to obtain the mesh conductive structure 100 having the above structure, a photomask with a pattern corresponding to the mesh conductive structure is required.

[0057] refer to Figure 3 , Figure 5 , Figure 6 , Figure 8 and Fig.10 , which are mask structures 70 corresponding to different grid conductive structures. The mask structure 70 has a plurality of first strip structures 71 and a plurality of second strip structures 72, the first strip structures 71 and the second strip structures 72 are arranged alternately to form intersections 73, and the first strip structures include a first end portion 74 close to the intersection and a first main body portion 75 far from the intersection, with a line width d (e.g., 5 μm).

[0058] refer to Figure 3 and Figure 4 , the diagonal line L2(a) of the node 73 may be 2 μm, and the width L1 of the line width variation may be 20 μm. Figure 6, L6 can be 24μm, L8 can be 3μm, d can be 5μm, L81 can be 10-50μm, and L82 can be 0-20μm. Figure 8 , diagonal L11 = L9 = 2 μm, α = 90°, L10 can be 5.5 μm, and d can be 5 μm. Fig.10 The mask of the reference is L14=L15=1μm, L13=20μm, d=5μm. Figure 3 and Figure 5 , L1=20μm, d=5μm, L2=L3=2μm.

[0059] It should be noted that L5 can be 0-20 μm.

[0060] Of course, in addition to the first ends of the multiple first strip structures having a smaller line width than the first main body, the second strip structure may also include a second end close to the intersection and a second main body away from the intersection, and the line width of the second end is smaller than the line width of the second main body, so that the sum of the two adjacent angles formed between the first metal wire and the second metal wire is greater than 180°.

[0061] The mask structure 10 also has a first curved portion and a second curved portion corresponding to the grid conductive structure. The length of the curved portion corresponds to the grid conductive structure, and the specific dimensions are not repeated here. Among them, the sum S1 of the first area enclosed by the first end after reducing the line width and / or the second area enclosed by the second end after reducing the line width, and the ratio S of the area when both the first end and the second end are not reduced meet the following relationship: 0.6≤S1 / S≤0.75. In other words, for the mask, the pattern area after reducing the line width must retain at least 60% of the original pattern area and at most 75% of the original pattern area. This is conducive to ensuring over-development during the etching process, thereby expanding the angle between the metal lines.

[0062] Preferably, the sum S3 of the third area enclosed by the reduced line width of the first end and / or the fourth area enclosed by the reduced line width of the second end, and the ratio S of the area when both the first end and the second end are not reduced, meet the following relationship: 0.2≤S3 / S≤0.4. In other words, for the mask, the removed area should account for at least 20% of the original pattern area and at most 40% of the original pattern area, so as to help further ensure that the area of ​​the node is reduced.

[0063] In order to obtain the structure of the mask, it is necessary to prepare the mask according to the pattern of the mask. The following briefly lists the preparation process of the mask.

[0064] First, a suitable substrate is selected, which may be, for example, quartz glass.

[0065] Second, apply a layer of photoresist, which may be a positive photoresist or a negative photoresist.

[0066] Third, place the photomask coated with photoresist in a photolithography machine for irradiation.

[0067] Fourth, the exposed photomask is treated in a developer to remove the uncross-linked photoresist, thereby forming a pattern consistent with the grid conductive structure provided by the present disclosure.

[0068] Fifth, an etching process (such as dry etching or wet etching) is used to remove the portion of the mask substrate that is not protected by the photoresist to form a final mask pattern (a pattern having a grid conductive structure and a hollow portion).

[0069] Sixth, remove the residual photoresist.

[0070] It should be noted that when the mask is placed in the photolithography machine for irradiation, the laser beam with a width of 250nm is used for multiple round trip irradiation, which is helpful to solve the problem of wire breakage.

[0071] According to the pattern of the mask, a mesh conductive structure having the above structure is obtained, and the preparation process is described by taking a mesh conductive structure having two sides as an example.

[0072] S10 , disposing a conductive material on the substrate 10 .

[0073] Specifically, refer to Fig.12 and Fig.12 The double-sided metal plating 30 of the substrate PET (polyethylene terephthalate) can have a thickness of 200nm-1000nm. For example, copper plating can be applied on both sides by vacuum magnetron sputtering technology, and the thickness can be 200nm, 400nm, 600nm, 1000nm, and the specific thickness is not limited. In addition to the metal 30, the conductive material can also include blackening layers 20 and 40 set on both sides to protect the metal copper, which is beneficial to reduce reflection and increase the absorption rate of light, thereby providing better optical effects.

[0074] S20 , disposing a photoresist material 50 on the conductive material 30 .

[0075] Specifically, refer to Fig.12 and Fig.13 , a photoresist material is disposed on the metal copper, for example, it can be a positive resist or a negative resist. The positive resist becomes easily soluble after exposure, while the negative resist is the opposite.

[0076] S30, placing a photomask on the photoresist material, and performing exposure and development processing on the photoresist material to form a patterned photoresist layer.

[0077] Specifically, refer to Fig.12 and Fig.14 , the light source irradiates the photoresist material from both sides, the patterned part on the mask is not irradiated, and the photoresist material in the hollow part is irradiated (reference Fig.12), and then put it into the developer for processing. If the photoresist material is positive, the pattern part is not easy to dissolve and is retained, and the hollow part is dissolved in the developer (refer to Fig.13 ), forming a patterned photoresist layer.

[0078] S40, etching the conductive material to form a grid conductive structure.

[0079] Specifically, refer to Fig.11 and Fig.15 The part exposed to the etching solution (including the black glue 20 and 40 and the metal copper) is etched away, and the pattern part covered by the photoresist material is not etched, forming a patterned grid conductive structure. Fig.14 .

[0080] S50 , removing the patterned photoresist layer 50 .

[0081] Specifically, refer to Fig.12 , Fig.16 and Fig.17 , remove the unetched photoresist layer to expose the conductive material, and form a double-sided mesh conductive structure. Each side of the mesh conductive structure has the above-mentioned mesh conductive structure, and the details are not repeated.

[0082] The ratio S of the sum S3 of the first area enclosed by the reduced line width of the first end and / or the second area enclosed by the reduced line width of the second end to the area when both the first end and the second end are not reduced meets the following relationship: 0.2≤S3 / S≤0.4.

[0083] It should be noted that the reference Figure 1 and Figure 5 (The pattern enclosed by the outermost dotted line and the innermost dotted line is the original mask pattern) The original mask design area is 217μm 2 , the intersection area is 26.3362μm 2 .contrast Figure 3 and Figure 5 (The pattern enclosed by the solid line is the new mask design) The new mask design area is 149μm 2 , intersection area 2.6475μm 2 Under the microscope, according to Figure 5 The actual intersection area of ​​the photomask designed by Zhongyuan is 132.932μm 2 ;according to Figure 5 The actual intersection area of ​​the photomask designed by Zhongxin is 40.9μm 2 , compared with the original mask design, the actual intersection area is reduced by 70%.

[0084] It should be understood that although the terms "first" or "second" etc. may be used in the present disclosure to describe various elements (such as a first end and a second end), these elements are not defined by these terms, and these terms are only used to distinguish one element from another.

[0085] The basic principles of the present disclosure are described above in conjunction with specific embodiments. However, it should be noted that the advantages, strengths, effects, etc. mentioned in the present disclosure are only examples and not limitations, and it cannot be considered that these advantages, strengths, effects, etc. are required by each embodiment of the present disclosure. In addition, the specific details disclosed above are only for the purpose of illustration and ease of understanding, and are not limitations. The above details do not limit the present disclosure to the necessity of adopting the above specific details to be implemented.

[0086] The above description has been given for the purpose of illustration and description. In addition, this description is not intended to limit the embodiments of the present disclosure to the forms disclosed herein. Although multiple example aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, changes, additions and sub-combinations thereof.

[0087] The components and devices involved in this disclosure are only illustrative examples and are not intended to require or imply that they must be connected, arranged, and configured in the manner shown in the drawings. As those skilled in the art will recognize, these components and devices can be connected, arranged, and configured in any manner.

[0088] The above are only specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A touch screen grid conductive structure, characterized in that: include: A first metal line and a second metal line arranged in the same layer and connected to each other, The first metal wires and the second metal wires are arranged in a staggered manner to form intersections, The first metal wire includes a first main body away from the intersection, and the first metal wire also includes at least one of a first end near the intersection or a first bent portion between the first end and the first main body, the line width of the first end is smaller than that of the first main body, and the first bent portion is bent. The second metal line includes a second main body portion away from the intersection, so that the sum of two adjacent angles formed between the first metal line and the second metal line is greater than 180°.

2. The touch screen grid conductive structure according to claim 1, characterized in that: A length d1 of an orthographic projection of the first end portion satisfies: 5 μm≤d1≤20 μm.

3. The touch screen grid conductive structure according to claim 1 or 2, characterized in that: The length of the orthographic projection of the first curved portion is 0 μm≤L2≤20 μm, the first metal wire and the second metal wire form two intersections, and the distance between the two intersections is not less than 10 μm and not more than 50 μm.

4. The touch screen grid conductive structure according to claim 1, characterized in that: The second metal line further includes a second end portion close to the intersection, the line width of the second end portion is smaller than the line width of the second main portion, and a length d1' of an orthographic projection of the first end portion and the second end portion satisfies: 11 μm≤d1'≤17 μm.

5. The touch screen grid conductive structure according to claim 1, characterized in that: The second metal wire further includes a second end portion close to the intersection and a second bent portion located between the second end portion and the second main body portion, wherein the second bent portion is bent. Wherein, the length d1' of the orthographic projection of the first end portion and the second end portion satisfies: 11 μm≤d1'≤17 μm, The lengths L2' of the orthographic projections of the first curved portion and the second curved portion satisfy: 0 μm≤L2'≤20 μm.

6. The touch screen grid conductive structure according to claim 1, characterized in that: The area S of the intersection satisfies: 30 μm 2 ≤S≤100μm 2 .

7. The touch screen grid conductive structure according to claim 1, characterized in that: The length of the diagonal line inside the intersection is 1 μm≤a≤10 μm.

8. A touch module, characterized in that: The touch module includes the touch screen grid conductive structure described in any one of 1-7.

9. A sensor, characterized in that: The sensor comprises the touch screen grid conductive structure according to any one of claims 1 to 7.

10. A photomask, characterized in that: The mask is in a grid pattern, and the grid pattern has the pattern of the touch screen grid conductive structure as described in any one of claims 1 to 7, wherein the sum S1 of a first area enclosed by reducing the line width of the first end and / or a second area enclosed by reducing the line width of the second end, and the ratio S of the area when both the first end and the second end are not reduced meet the following relationship: 0.6≤S1 / S≤0.

75.

11. A method for preparing a touch screen grid conductive structure, characterized in that: include: A conductive material is provided on the substrate, A photoresist material is provided on the conductive material. The photomask described in claim 10 is arranged on the photoresist material, and the photoresist material is exposed and developed to form a patterned photoresist layer. The patterned photoresist layer includes a first metal wire and a second metal wire which are arranged in the same layer and connected to each other. The first metal wires and the second metal wires are arranged in a staggered manner to form intersections, The first metal line includes a first end portion close to the intersection and a first main portion away from the intersection, wherein the line width of the first end portion is smaller than that of the first main portion. and / or the second metal line includes a second end portion close to the intersection and a second main portion away from the intersection, the line width of the second end portion is smaller than the second main portion, so that the sum of two adjacent angles formed between the first metal line and the second metal line is greater than 180°, etching a grid conductive structure formed by the conductive material, The patterned photoresist layer is removed.

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