Light emitting device and manufacturing method thereof

Abstract

A light emitting device includes: a base semiconductor layer; at least one core provided on the base semiconductor layer, the at least one core including a body portion extending in a first direction and a shield portion provided at an upper end of the body portion, in which a width of a lower surface of the shield portion in a second direction orthogonal to the first direction is greater than a width of the body portion in the second direction; a first insulating layer provided on an upper surface of the base semiconductor layer and an upper surface of the shield portion; and at least one light emitting portion provided on a side surface of the body portion.

Description

Technical Field

[0001] The present disclosure relates to a light emitting device and a method for manufacturing the same. Background Art

[0002] Light emitting devices (LEDs) are efficient and environmentally friendly light sources used in various fields such as displays, optical communications, automobiles, and general lighting. Recently, semiconductor light emitting devices using nanostructures and their manufacturing techniques have been proposed to improve light efficiency by improving crystallinity and increasing the emission area. Semiconductor light emitting devices using nanostructures generate less heat, and the surface area of ​​the light emitting portion is increased by the nanostructure, so that higher light emitting efficiency can be obtained. Summary of the invention

[0003] Provided are a light emitting device capable of suppressing a decrease in light emitting efficiency due to a polarization phenomenon and a method for manufacturing the light emitting device.

[0004] Furthermore, a light emitting device having an increased emission area and a method of manufacturing the light emitting device are provided.

[0005] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments of the disclosure.

[0006] According to aspects of the present disclosure, a light-emitting device may include: a basic semiconductor layer, at least one core provided on the basic semiconductor layer, the at least one core including a main body portion extending in a first direction and a shielding portion provided at an upper end of the main body portion, wherein a width of a lower surface of the shielding portion in a second direction orthogonal to the first direction is greater than a width of the main body portion in the second direction; a first insulating layer provided on an upper surface of the basic semiconductor layer and an upper surface of the shielding portion; and at least one light-emitting portion provided on a side surface of the main body portion.

[0007] The width of the shielding portion in the second direction may gradually decrease from a lower surface of the shielding portion toward an upper end of the shielding portion in the first direction.

[0008] The side surface of the body portion may be a non-polar plane.

[0009] The side surface of the main body part may include a first portion adjacent to the basic semiconductor layer and a second portion above the first portion in a first direction, the light-emitting device may include a second insulating layer provided on the first portion of the side surface of the main body part adjacent to the basic semiconductor layer, at least one light-emitting part may be provided on the second portion of the side surface of the main body part, the second portion is above the first portion of the side surface of the main body part, and the second insulating layer may not be formed on the second portion of the side surface of the main body part.

[0010] The base semiconductor layer may include the same material as the at least one core.

[0011] At least one light emitting portion may include a first conductive type semiconductor layer provided on a side surface of the body portion, an active layer including a quantum well structure and provided on the first conductive type semiconductor layer, and a second conductive type semiconductor layer provided on the active layer.

[0012] The base semiconductor layer and the at least one core may include the same material as that of the first conductive type semiconductor layer.

[0013] The base semiconductor layer, the at least one core, and the at least one light emitting portion may include a GaN-based semiconductor material.

[0014] The at least one core may include a plurality of cores including body portions having different widths in the second direction, and the at least one light emitting portion may include a plurality of light emitting portions respectively provided on the plurality of cores.

[0015] The plurality of light emitting portions may have different heights in the first direction.

[0016] The plurality of light emitting portions may have different widths in the second direction.

[0017] Each side surface of each main body portion of the multiple cores may include a first portion adjacent to the basic semiconductor layer and a second portion above the first portion in the first direction, and the light-emitting device may include a plurality of second insulating layers respectively provided on the first portions adjacent to the basic semiconductor layer of the side surfaces of the main body portions of the multiple cores, and the plurality of second insulating layers may have different heights in the first direction.

[0018] The plurality of light emitting portions may be configured to emit light of different colors.

[0019] Each of the plurality of light emitting portions may include a different indium content.

[0020] According to aspects of the present disclosure, a display may include a display panel and a controller, the display panel including a light-emitting structure, the light-emitting structure including a plurality of light-emitting devices and a driving circuit configured to turn on and off the light-emitting structure, the controller being configured to input on-off switch signals for the plurality of light-emitting devices to the driving circuit based on an image signal, wherein each of the plurality of light-emitting devices may include: a basic semiconductor layer; at least one core provided on the basic semiconductor layer, the at least one core including a main body portion extending in a first direction and a shielding portion provided at an upper end of the main body portion, wherein a lower surface of the shielding portion has a width in a second direction orthogonal to the first direction that is greater than a width of the main body portion in the second direction; a first insulating layer provided on an upper surface of the basic semiconductor layer and an upper surface of the shielding portion; and at least one light-emitting portion provided on a side surface of the main body portion.

[0021] According to aspects of the present disclosure, a method for manufacturing a light-emitting device may include: forming a basic semiconductor layer on a substrate; forming a mask layer defining at least one growth hole in the basic semiconductor layer; forming at least one core, the at least one core including a main body portion at least partially filling the at least one growth hole and extending in a first direction and a shielding portion extending from the main body portion above an upper surface of the mask layer, wherein a width of a lower surface of the shielding portion in a second direction orthogonal to the first direction is greater than a width of the main body portion in the second direction; removing the mask layer; forming a first insulating layer on the upper surface of the basic semiconductor layer and the upper surface of the shielding portion; and forming at least one light-emitting portion on a side surface of the main body portion.

[0022] The base semiconductor layer, the at least one core, and the at least one light emitting portion may include a GaN-based semiconductor material.

[0023] The base semiconductor layer may include the same material as the at least one core.

[0024] The side surface of the main body part may include a first part adjacent to the base semiconductor layer and a second part above the first part in a first direction, and the method may include: before forming at least one light-emitting part, forming at least one second insulating layer on the first part of the side surface of the main body part, at least one light-emitting part may be formed on the second part of the side surface of the main body part, the second part is above the first part of the side surface of the main body part, and at least one second insulating layer may not be formed on the second part of the side surface of the main body part.

[0025] At least one growth hole may include multiple growth holes having different sizes, at least one core may include multiple cores, at least one light emitting part may include multiple light emitting parts, at least one second insulating layer may include multiple second insulating layers, the multiple cores may include main body parts having different widths in the second direction, the main body parts are respectively formed in the multiple growth holes, the multiple second insulating layers may have different heights in the first direction, the multiple second insulating layers correspond to the multiple cores respectively, and the multiple light emitting parts may be formed on the part of the side surface of the main body part of each core in the multiple cores where the corresponding second insulating layer in the multiple second insulating layers is not formed. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The above and other aspects, features and advantages of certain embodiments of the present disclosure will become more apparent through the following description in conjunction with the accompanying drawings, in which:

[0027] Figure 1A is a cross-sectional view showing the structure of a light emitting device according to an embodiment;

[0028] Figure 1B yes Figure 1A An enlarged view of the portion "A" in FIG. 1 shows a light emitting portion according to an embodiment;

[0029] Figure 2A and Figure 2B are perspective views showing various shapes of cores according to embodiments;

[0030] Figure 3 is a cross-sectional view showing the structure of a light emitting device according to an embodiment;

[0031] Figure 4 is a cross-sectional view showing the structure of a light emitting device according to an embodiment;

[0032] Figures 5A to 5G is a diagram illustrating a method of manufacturing a light emitting device according to an embodiment;

[0033] Fig. 6A and Figure 6B is a diagram illustrating a method of manufacturing a light emitting device according to an embodiment;

[0034] 7A to 7E is a diagram illustrating a method of manufacturing a light emitting device according to an embodiment;

[0035] Figure 8 is a diagram showing a display according to an embodiment;

[0036] Fig. 9 is a block diagram showing an electronic device including a display according to an embodiment;

[0037] Fig.10is a diagram showing a mobile device as an example of an electronic device according to an embodiment;

[0038] Fig.11 is a diagram showing a head-up display device for a vehicle as an example of an electronic device according to an embodiment;

[0039] Fig.12 is a diagram showing augmented reality glasses or virtual reality glasses as an example of an electronic device according to an embodiment;

[0040] Fig.13 is a diagram showing a sign as an example of an electronic device according to an embodiment; and

[0041] Fig.14 is a diagram illustrating a wearable display as an example of an electronic device according to an embodiment. DETAILED DESCRIPTION

[0042] Now will be referred to in detail embodiment, its example is shown in the accompanying drawings, wherein the same reference numerals always represent the same elements.In this respect, the present embodiment can have different forms, and should not be construed as being limited to the description set forth herein.Therefore, the embodiment is described below only by reference to the accompanying drawings to explain various aspects.As used herein, the term "and / or" includes any and all combinations of one or more related enumerated items.Statements such as "at least one of ..." modify the entire element list when before a column of elements, rather than modifying the individual elements in the list.For example, the statement "at least one of a, b, and c" should be understood to include only a, only b, only c, both a and b, both a and c, both b and c, or all a, b, and c.

[0043] Since the embodiments allow various changes and many embodiments, the exemplary embodiments will be shown in the drawings and described in detail in the written description. The effects, features and methods for realizing the present disclosure can be explained by referring to the following detailed embodiments and the drawings. However, the present disclosure can be implemented in many different forms and should not be construed as being limited to the exemplary embodiments set forth herein.

[0044] Hereinafter, the embodiments of the present disclosure are explained in detail with reference to the accompanying drawings. When referring to the accompanying drawings, the same reference numerals may represent the same or corresponding elements, and their redundant descriptions may be omitted. It should be understood that, although the terms "first", "second", etc. may be used herein to describe various components, these components should not be limited by these terms. These components are only used to distinguish one component from another component. As used herein, the singular forms "one" and "the" are intended to also include plural forms, unless the context clearly states otherwise. It will be further understood that the terms "include" and / or "comprise" used herein specify the presence of the features or components, but do not exclude the presence or addition of one or more other features or components. In the embodiments described below, it should be understood that when a part (such as a film, region, component, etc.) is referred to as being on or above another part, a part may be directly on another part, or an intermediate film, region, component, etc. may be present thereon.

[0045] For ease of explanation, the sizes of the components in the drawings may be exaggerated. In other words, since the sizes and thicknesses of the components in the drawings are arbitrarily shown for ease of explanation, the present disclosure is not limited thereto. When a certain embodiment can be implemented differently, a specific process sequence can be performed differently from the described sequence. For example, two processes described in succession can be performed substantially simultaneously or in an order opposite to the described order.

[0046] Figure 1A is a cross-sectional view showing the structure of the light emitting device 10 according to the embodiment. The light emitting device 10 according to the embodiment may be, for example, a micro light emitting diode (micro-LED). The light emitting device 10 according to the embodiment may be a nanostructure light emitting device. In this case, the core 3 may be referred to as a nanocore or a nanorod. Figure 1A The light emitting device 10 may include a base semiconductor layer 2 , at least one core 3 (hereinafter referred to as a single core for convenience of description), a first insulating layer 5 a and a light emitting portion 4 .

[0047] The substrate 1 is a growth substrate for growing a semiconductor single crystal, and a silicon (Si) substrate, a silicon carbide (SiC) substrate, a sapphire substrate, or the like can be used as the substrate 1. In addition, a base semiconductor layer 2 (e.g., AlN, AlGaN, ZnO, GaAs, MgAl2O3, etc.) to be formed on the substrate 1 is preferably formed on the substrate 1. 2 O 4 、MgO、LiAlO 2 、LiGaO 2 A material grown with GaN or GaN may be used as the substrate 1. According to a device to which the light emitting device 10 is applied, the substrate 1 may be removed after the light emitting device 10 is manufactured through a manufacturing process described below.

[0048] The base semiconductor layer 2 may be formed on the substrate 1. The base semiconductor layer 2 may be used as a growth template for the core 3. In an embodiment, the base semiconductor layer 2 may include the same material as the core 3. As a result, when the core 3 is grown on the base semiconductor layer 2, crystal defects due to lattice mismatch may be reduced. In an embodiment, the base semiconductor layer 2 may include a III-V nitride semiconductor material. The base semiconductor layer 2 may be a first conductive type semiconductor layer doped with a first type impurity. For example, the base semiconductor layer 2 may include a GaN-based semiconductor material. For example, the base semiconductor layer 2 may be a GaN layer doped with n-type impurities (i.e., an n-GaN layer). Si, Ge, Se, Te, etc. may be used as n-type impurities. A buffer layer for epitaxial growth may be further formed between the substrate 1 and the base semiconductor layer 2. The base semiconductor layer 2 may have a multilayer structure. Depending on the device to which the light-emitting device 10 is applied, the base semiconductor layer 2 may be removed after the manufacture of the light-emitting device 10 is completed by the manufacturing process described below.

[0049] The core 3 is formed on the base semiconductor layer 2. The core 3 may include a main body portion 31 and a shielding portion 32. The main body portion 31 may extend from the base semiconductor layer 2 in a first direction D1 (e.g., in a direction perpendicular to the upper surface 21 of the base semiconductor layer 2). The side surface 311 of the main body portion 31 is a non-polar plane (i.e., an m-plane). The shielding portion 32 is disposed at the upper end of the main body portion 31. The shielding portion 32 has a lower surface 321, and the width of the lower surface 321 in the second direction D2 (perpendicular to the first direction D1) is greater than the width of the main body portion 31 in the second direction D2. The width of the shielding portion 32 in the second direction D2 may gradually decrease as the distance from the lower surface 321 in the first direction D1 increases. Therefore, the upper surface 322 of the shielding portion 32 has a sharp shape inclined relative to the lower surface 321. The upper surface 322 of the shielding portion 32 is a semi-polar plane (i.e., an r-plane).

[0050] The core 3 may be formed on the base semiconductor layer 2 using the base semiconductor layer 2 as a template. As described above, the core 3 may include the same material as the base semiconductor layer 2. The core 3 may include a III-V nitride semiconductor material. The core 3 may include a first conductive type semiconductor material doped with a first type impurity. For example, the core 3 may include a GaN-based semiconductor material. For example, the core 3 may include GaN doped with n-type impurities (i.e., n-GaN). Si, Ge, Se, Te, etc. may be used as n-type impurities.

[0051] The first insulating layer 5a at least partially covers the upper surface 21 of the base semiconductor layer 2 and the upper surface 322 of the shielding portion 32. The first insulating layer 5a may include a first portion 51 at least partially covering the upper surface 21 of the base semiconductor layer 2 and a second portion 52 at least partially covering the upper surface 322 of the shielding portion 32. The first insulating layer 5a may include an insulating material such as silicon oxide or silicon nitride. The first insulating layer 5a may include, for example, SiO 2 、SiN、TiO 2 、Si 3 N 4 、Al 2 O 3 、TiN、AlN、ZrO 2 , TiAlN or TiSiN. Because the width of the shielding portion 32 of the core 3 in the second direction D2 is greater than the width of the main body portion 31, the shielding portion 32 is used as a mask to prevent the insulating material from being deposited on the side surface 311 of the main body portion 31. Therefore, in the process of forming the first insulating layer 5a, no insulating material is deposited on the side surface 311 of the main body portion 31. The insulating material may be deposited on the upper surface 21 of the base semiconductor layer 2 and the upper surface 322 of the shielding portion 32, except for the side surface 311 of the main body portion 31.

[0052] The light emitting portion 4 is formed on the side surface 311 of the main body portion 31 of the core 3. The light emitting portion 4 may include a III-V group nitride semiconductor material. For example, the light emitting portion 4 may also include a GaN-based semiconductor material.

[0053] Figure 1B yes Figure 1A FIG. 4 is an enlarged view of the portion “A” in FIG. 4 , showing the light emitting portion 4 according to the embodiment. Figure 1A and Figure 1B The light emitting portion 4 may have a layered structure grown along the second direction D2 on the side surface 311 of the main body portion 31 of the core 3. The light emitting portion 4 may include a first conductive type semiconductor layer 41 formed on the side surface 311 of the main body portion 31 of the core 3, an active layer 42 having a quantum well structure at least partially covering the first conductive type semiconductor layer 41, and a second conductive type semiconductor layer 43 at least partially covering the active layer 42.

[0054] The first conductive type semiconductor layer 41 may be formed by growing along the second direction D2 on the side surface 311 of the body portion 31 of the core 3. The first conductive type semiconductor layer 41 may be a semiconductor layer doped with the same first type impurities as the first type impurities of the base semiconductor layer 2 and the core 3. For example, the first conductive type semiconductor layer 41 may be an n-GaN layer.

[0055] The active layer 42 emits light through electron-hole recombination. The active layer 42 may be formed by growing on the first conductive type semiconductor layer 41 along the second direction D2. The active layer 42 has a quantum well structure. For example, the active layer 42 may have a structure formed by periodically changing Al x Ga y In z A single quantum well or multiple quantum well structure is made by adjusting the band spacing by adjusting the x, y and z values ​​in N. For example, the quantum well layer and the barrier layer can be paired in the form of InGaN / GaN, InGaN / InGaN, InGaN / AlGaN or InGaN / InAlGaN to form a quantum well structure, and the band gap energy can be controlled according to the composition ratio of indium (In) in the material layer containing indium (In), thereby adjusting the light emission wavelength band.

[0056] The second conductive type semiconductor layer 43 may at least partially cover the surface of the active layer 42. The second conductive type semiconductor layer 43 may be formed by growing on the active layer 42 along the second direction D2. The second conductive type semiconductor layer 43 may be a semiconductor layer doped with second type impurities. For example, the second conductive type semiconductor layer 43 may be a p-GaN layer doped with p-type impurities. Mg, Zn, Be, etc. may be used as p-type impurities.

[0057] The light emitting portion 4 may be formed by a method such as hybrid vapor phase epitaxy (HVPE), molecular beam epitaxy (MBE), metal organic vapor phase epitaxy (MOVPE), and metal organic chemical vapor deposition (MOCVD). When the light emitting portion 4 grows, the first insulating layer 5a blocks the light emitting portion 4 from growing in a region other than the side surface 311 of the main body portion 31 of the core 3. In addition, the first insulating layer 5a (e.g., the first portion 51 formed on the base semiconductor layer 2) insulates the base semiconductor layer 2 from the second conductive type semiconductor layer 43 of the light emitting portion 4.

[0058] In the case where a conventional light-emitting portion is grown on a crystal plane (0001 plane) in the c-axis direction (which is a polar plane), a quantum confinement Stark effect (QCSE) may occur due to polarization caused by the piezoelectric field effect. This may lead to a decrease in internal quantum efficiency. As the indium (In) content of the light-emitting portion increases and the emission wavelength becomes longer, the above-mentioned problem of the light-emitting portion grown on the polar plane may become worse.

[0059] In the light emitting device 10 according to the embodiment, the light emitting portion 4 is formed by growing on the side surface 311 of the main body portion 31 of the core 3. The side surface 311 of the main body portion 31 of the core 3 is a non-polar plane (i.e., an m-plane). Therefore, the problem of reducing the internal quantum efficiency due to the internal magnetic field can be solved. In addition, the polarization due to the piezoelectric field effect can be suppressed, and thus the QCSE can be suppressed. Therefore, the internal quantum efficiency can be improved. In addition, when the indium (In) content of the light emitting portion 4 increases, the occurrence of crystal defects can be reduced. As a result, it becomes easy to maintain a uniform high indium (In) content in the light emitting portion 4, and as a result, the color purity can be improved. In addition, a light emitting portion 4 that generates red light with high efficiency can be realized. Because the light emitting portion 4 is formed around the main body portion 31 of the core 3, a light emitting device 10 having a light emitting portion 4 can be realized, which has an increased emission area compared to a planar light emitting structure stacked in the first direction D1.

[0060] In addition, since the shielding portion 32 of the core 3 is used as a mask to prevent the first insulating layer 5a from being formed on the side surface 311 of the body portion 31, the process of forming a mask for selectively forming the first insulating layer 5a and the process of removing the mask after forming the first insulating layer 5a can be omitted. Therefore, the manufacturing process of the light emitting device 10 can be simplified, and the manufacturing cost can be reduced. In addition, the risk of damage and performance degradation of the light emitting device 10 due to the mask formation and removal process can be reduced, so that a reliable light emitting device 10 can be manufactured.

[0061] The shape of the light emitting device 10 may vary. For example, the shape of the light emitting device 10 may depend on the shape of the core 3.

[0062] Figure 2A and Figure 2B 3 is a perspective view showing various shapes of the core 3 according to the embodiment. Figure 2A , the main body portion 31 of the core 3 may be cylindrical. The cross-sectional shape of the main body portion 31 of the core 3 orthogonal to the first direction D1 may have various shapes, such as a circular shape, an elliptical shape, or a polygonal shape. The shape of the shielding portion 32 of the core 3 may be determined by the lattice form of the material forming the core 3. For example, in the case where the core 3 includes GaN, the shielding portion 32 may have a hexahedral shape with a hexagonal bottom. Figure 2B As shown, the main body portion 31 of the core 3 may have a strip shape extending in the second direction D2. The shape of the core 3 is not limited to Figure 2A and 2B The core 3 may have various shapes, including a shielding portion 32 having a width in the second direction D2 greater than a width of the body portion 31 in the second direction D2.

[0063] Figure 3 is a cross-sectional view showing the structure of a light emitting device 10 according to the embodiment. Figure 3 The embodiment of the light emitting device 10 shown is similar to Figure 1A , Figure 1B , Figure 2A and Figure 2B The embodiment of the light emitting device 10 shown is different in that the insulating layer is partially formed on the side surface 311 of the main body portion 31 of the core 3. Figure 1A , Figure 1B , Figure 2A and Figure 2B Repeated description of aspects shown in .

[0064] refer to Figure 3 , the light emitting device 10 may include a second insulating layer 5b that at least partially covers the side surface 311 of the main body portion 31 of the core 3. The second insulating layer 5b at least partially covers a portion (e.g., portion 390) of the side surface 311 of the main body portion 31, and the portion 390 is adjacent to the base semiconductor layer 2. For example, the second insulating layer 5b extends from the first insulating layer 5a (e.g., the first portion 51) formed on the base semiconductor layer 2 along the side surface 311 of the main body portion 31 in the first direction D1. The second insulating layer 5b may include, for example, SiO 2 、SiN、TiO 2 、Si 3 N 4 、Al 2 O 3 、TiN、AlN、ZrO 2 , TiAlN or TiSiN. For example, the second insulating layer 5b may be formed together with the first insulating layer 5a in the process of forming the first insulating layer 5a. The light emitting portion 4 is formed on a portion of the side surface 311 of the main body portion 31 where the second insulating layer 5b is not formed. For example, the light emitting portion 4 may be formed on a portion of the side surface 311 of the main body portion 31 between the second insulating layer 5b and the lower surface 321 of the shielding portion 32. Figure 3 As shown, the adjacent portion 390 (i.e., the first portion) may be adjacent to the base semiconductor layer 2, and the non-adjacent portion 392 (i.e., the second portion) may be above the adjacent portion 390 in the first direction D1. The non-adjacent portion 392 may have the light emitting portion 4 formed thereon, and the adjacent portion 390 may have the insulating layer 5a and the insulating layer 5b formed thereon.

[0065] The portion of the side surface 311 of the main body portion 31 adjacent to the base semiconductor layer 2 (hereinafter referred to as the adjacent portion) may refer to a portion close to the upper surface 21 of the base semiconductor layer 2 (which is a polar plane), and the quality of the adjacent portion as a non-polar plane may be relatively low compared to the quality of the portion farther away from the base semiconductor layer 2 in the first direction D1. When the light emitting portion 4 is formed on the entire side 311 of the main body portion 31 including the adjacent portion, the half width of the emission wavelength may increase due to the difference in the material composition of the light emitting portion 4 in the first direction D1, thereby deteriorating the emission quality. According to an embodiment, since the second insulating layer 5b is formed in the adjacent portion, the light emitting portion 4 is not grown in the adjacent portion of the side surface 311 of the main body portion 31. The light emitting portion 4 is formed on a portion (e.g., portion 392) of the side surface 311 of the main body portion 31 located above the adjacent portion in the first direction D1. That is, since the light emitting portion 4 grows on a relatively good quality non-polar plane, the material composition of the light emitting portion 4 may be uniform in the first direction D1. As a result, it is possible to prevent an increase in the half width of the emission wavelength due to a difference in the material composition of the light emitting portion 4 .

[0066] Figure 4 is a cross-sectional view showing the structure of a light emitting device 10 according to the embodiment. Figure 4 The embodiment of the light emitting device 10 shown in FIG. Figure 3 The embodiment of the lighting device 10 shown differs in that Figure 4 The light emitting device 10 shown includes a plurality of cores, each of which has a main body portion 31 with different widths in the second direction D2. Figure 1A , Figure 1B , Figure 2A , Figure 2B and Figure 3 Repeated description of aspects shown in .

[0067] refer to Figure 4 , a plurality of cores (e.g., cores 3-1, 3-2, and 3-3) having different widths in the second direction D2 and a plurality of light-emitting portions 4-1, 4-2, and 4-3 corresponding to the cores 3-1, 3-2, and 3-3, respectively, are shown. Here, the "width of the core in the second direction D2" may refer to the diameter of an equivalent circle corresponding to the cross section of the main body portion when the main body portion has a cylindrical shape with a cross section that is, for example, a circular, elliptical, or polygonal shape, or may refer to the minimum diameter of a circle including the cross section of the main body portion. In addition, when the main body portion has a strip shape, the "width of the core in the second direction D2" may refer to the width of the main body portion in the short axis direction.

[0068] The cores 3-1, 3-2, and 3-3 respectively include main body portions 31-1, 31-2, and 31-3 and shielding portions 32-1, 32-2, and 32-3. The widths of the main body portions 31-1, 31-2, and 31-3 in the second direction D2 are S11, S21, and S31 respectively. In some embodiments, S11 < S21 < S31. In some embodiments, the heights of the main body portions 31-1, 31-2, and 31-3 in the first direction D1 are the same, but at least one of the main body portions 31-1, 31-2, and 31-3 may have a height different from that of the remaining main body portions. The description of the main body portion 31 given above applies to the main body portions 31-1, 31-2, and 31-3. The width of each of the shielding portions 32-1, 32-2, and 32-3 in the second direction D2 may be greater than the width of the main body portions 31-1, 31-2, and 31-3 in the second direction D2. The description of the shielding portion 32 given above applies to the shielding portions 32-1, 32-2, and 32-3.

[0069] The first insulating layer 5a may include a first portion 51 formed on the upper surface 21 of the base semiconductor layer 2 and second portions 52 respectively formed on the upper surfaces of the shielding portions 32-1, 32-2, and 32-3. The second insulating layers 5b-1, 5b-2, and 5b-3 respectively at least partially cover the side surfaces 311-1, 311-2, and 311-3 of the main body portions 31-1, 31-2, and 31-3. The description of the second insulating layer 5b given above applies to the second insulating layers 5b-1, 5b-2, and 5b-3. The heights of the second insulating layers 5b-1, 5b-2, and 5b-3 in the first direction D1 may be different from each other. For example, when the heights of the second insulating layers 5b-1, 5b-2, and 5b-3 in the first direction D1 are H11, H21, and H31 respectively, H11 < H21 < H31.

[0070] The light emitting parts 4-1, 4-2 and 4-3 are formed on the side surfaces of the main body parts 31-1, 31-2 and 31-3 respectively, which are not covered by the second insulating layer 5b-1, 5b-2 and 5b-3. The description of the light emitting part 4 given above is applicable to the light emitting parts 4-1, 4-2 and 4-3. The indium (In) content of the light emitting parts 4-1, 4-2 and 4-3 may be the same as each other. The heights of the light emitting parts 4-1, 4-2 and 4-3 in the first direction D1 may be different from each other. As described above, the heights of the main body parts 31-1, 31-2 and 31-3 in the first direction D1 may be the same, and the heights of the second insulating layers 5b-1, 5b-2 and 5b-3 formed on the side surfaces 311-1, 311-2 and 311-3 of the main body parts 31-1, 31-2 and 31-3 respectively in the first direction D1 may be different from each other. In the embodiment, when the heights of the light emitting parts 4-1, 4-2 and 4-3 in the first direction D1 are H12, H22 and H32 respectively, H12>H22>H32. The widths of the light emitting parts 4-1, 4-2 and 4-3 in the second direction D2 may be different from each other. When the widths of the light emitting parts 4-1, 4-2 and 4-3 in the second direction D2 are S12, S22 and S32 respectively, S12 <S22<S32。

[0071] The light-emitting parts 4-1, 4-2 and 4-3 can emit light with different colors (i.e., different wavelengths). In the case of GaN-based light-emitting parts, the emission wavelength depends on the content of indium (In). The higher the indium (In) content, the longer the emission wavelength. In the process of manufacturing the light-emitting parts 4-1, 4-2 and 4-3, the total amount of indium (In) provided to the cores 3-1, 3-2 and 3-3 per unit time is the same. Therefore, the smaller the size of the light-emitting parts 4-1, 4-2 and 4-3, the higher the indium (In) content. Figure 4In the illustrated embodiment, the light emitting portion 4-1 having the smallest width S12 has the highest indium (In) content, and the light emitting portion 4-3 having the largest width S32 has the lowest indium (In) content. Therefore, in terms of emission wavelength, the emission wavelength becomes shorter in the order of the light emitting portion 4-1, the light emitting portion 4-2, and the light emitting portion 4-3. For example, the widths of the light emitting portions 4-1, 4-2, and 4-3 in the second direction D2 can be adjusted so that the light emitting portions 4-1, 4-2, and 4-3 emit red light R, green light G, and blue light B, respectively. The widths S12, S22, and S32 of the light emitting portions 4-1, 4-2, and 4-3 in the second direction D2 can be adjusted by the heights H12, H22, and H32 of the light emitting portions 4-1, 4-2, and 4-3 in the first direction D1. The heights H12, H22, and H32 of the light emitting portions 4-1, 4-2, and 4-3 in the first direction D1 can be adjusted by the heights H11, H21, and H31 of the second insulating layers 5b-1, 5b-2, and 5b-3 in the first direction D1. As a result, the light emitting portions 4-1, 4-2, and 4-3 are grown on a non-polar plane, thereby suppressing QCSE, and thus, a monolithic color light emitting device capable of emitting three-color light with stable wavelength characteristics can be realized.

[0072] Figures 5A to 5G 1 is a diagram showing a method of manufacturing a light emitting device 10 according to an embodiment. The method of manufacturing a light emitting device 10 according to an embodiment may include forming a base semiconductor layer 2 on a substrate 1 (see Figure 5A ), a mask layer 6 defining a growth hole 6a is formed on the base semiconductor layer 2 (see Figure 5B ), forming a core 3 having a main body portion 31 filling the growth hole 6a and a shielding portion 32 larger than the main body portion 31 (see Figure 5C and 5D ), remove the mask layer 6 (see Figure 5E ), forming a first insulating layer 5a (see Fig. 5F ), and forming a light emitting portion 4 on the side surface 311 of the main body portion 31 (see Figure 5G ). Below, each operation will be described in detail.

[0073] refer to Figure 5A , a base semiconductor layer 2 is formed on a substrate 1. The substrate 1 is a growth substrate for growing a semiconductor single crystal, and a silicon (Si) substrate, a silicon carbide (SiC) substrate, a sapphire substrate, or the like can be used as the substrate 1. In addition, a base semiconductor layer 2 (for example, AlN, AlGaN, ZnO, GaAs, MgAl2O3, etc.) suitable for being formed on the substrate 1 can be used. 2 O 4 、MgO、LiAlO 2 、LiGaO 2or GaN) is grown on a substrate. In an embodiment, the base semiconductor layer 2 may include a III-V nitride semiconductor material (e.g., a GaN-based semiconductor material). The base semiconductor layer 2 may be a first conductive type semiconductor layer. The base semiconductor layer 2 may be formed by various methods, such as HVPE, MBE, MOVPE, and MOCVD. For example, GaN may be grown on the substrate 1 and doped with n-type impurities, such as Si, Ge, Se, or Te, to form an n-GaN layer. A buffer layer for epitaxial growth may be further formed between the substrate 1 and the base semiconductor layer 2.

[0074] refer to Figure 5B , a mask layer 6 defining at least one growth hole 6a is formed on the base semiconductor layer 2. For example, after forming the mask layer 6 that completely covers the upper surface 21 of the base semiconductor layer 2, the mask layer 6 can be etched by a photolithography method (e.g., a photolithography method or an electron beam lithography method), and thus, at least one growth hole 6a can be formed in the mask layer 6. The growth hole 6a can have various shapes, such as a circular, elliptical, polygonal, and stripe shape. The upper surface 21 of the base semiconductor layer 2 is partially exposed through the growth hole 6a. The mask layer 6 may include SiO 2 、TiO 2 、Si 3 N 4 、Al 2 O 3 、TiN、AlN、ZrO 2 , TiAlN, TiSiN, etc. For example, when forming a SiO 2 After the SiO layer, the 2 The mask layer 6 is formed to form a growth hole 6a exposing the upper surface 21 of the base semiconductor layer 2. The height of the mask layer 6 in the first direction D1 may correspond to the height of the main body portion 31 of the core 3 to be formed later in the first direction D1.

[0075] Next, forming a core 3 grown from the upper surface 21 of the base semiconductor layer 2 through the growth hole 6a is performed. In an embodiment, the core 3 may include a III-V nitride semiconductor material (e.g., a GaN-based semiconductor material). The core 3 may be a first conductive type semiconductor layer. The core 3 may be formed by various methods, such as HVPE, MBE, MOVPE, and MOCVD. For example, GaN may be grown from the upper surface 21 of the base semiconductor layer 2 through the growth hole 6a. GaN grows from the upper surface 21 of the base semiconductor layer 2 along the first direction D1 to at least partially fill the interior of the growth hole 6a. When GaN fills the entire interior of the growth hole 6a, as shown in FIG. Figure 5CAs shown, a main body portion 31 extending from the upper surface 21 of the base semiconductor layer 2 along the first direction D1 is formed. After the entire interior of the growth hole 6a is filled, GaN gradually grows from the upper end of the main body portion 31 along the first direction D1, as shown in FIG. Figure 5D , and also grows along the upper surface 61 of the mask layer 6 in the second direction D2 orthogonal to the first direction D1. The lower surface 321 of the shielding portion 32 extends in the second direction D2 along the upper surface 61 of the mask layer 6. Therefore, the width of the lower surface 321 of the shielding portion 32 in the second direction D2 may be greater than the width of the main body portion 31. The shape of the shielding portion 32 may be determined by the lattice structure of the material forming the core 3. The shielding portion 32 has a width in the second direction D2 greater than the width of the main body portion 31 in the second direction D2, and the shielding portion 32 is formed on the upper surface 61 of the mask layer 6. For example, when the core 3 includes GaN, the shielding portion 32 may have a heptagonal shape with a hexagonal bottom.

[0076] Next, the mask layer 6 is removed (eg, by a wet etching process). Figure 5E As shown, the upper surface 21 of the base semiconductor layer 2 can be exposed, and a core 3 can be formed, the core 3 including a body portion 31 extending from the upper surface 21 of the base semiconductor layer 2 in a first direction D1 and a shielding portion 32 having a width in the second direction D2 greater than the width of the body portion 31 in the second direction D2. The shielding portion 32 has a lower surface 321 and an upper surface 322, the lower surface 321 having a width in the second direction D2 greater than the width of the body portion 31 in the second direction D2, and the upper surface 322 extends obliquely from the lower surface 321 in the first direction D1 and is generally sharp. The core 3 may include the same material as the base semiconductor layer 2 (e.g., a first conductive type semiconductor material). In some embodiments, the base semiconductor layer 2 is a first conductive type semiconductor layer based on GaN (i.e., an n-GaN layer). The core 3 including GaN may be doped with n-type impurities such as Si, Ge, Se, or Te. Therefore, the core 3 may include the same n-GaN as the base semiconductor layer 2.

[0077] Next, the first insulating layer 5a is formed. The first insulating layer 5a is formed to at least partially cover the polar plane and the semi-polar plane. The first insulating layer 5a may not be formed on the non-polar plane. The first insulating layer 5a may include an insulating material (e.g., SiO 2 、TiO 2 、Si 3 N 4 、Al 2 O 3 、TiN、AlN、ZrO 2, TiAlN or TiSiN). In some embodiments, the first insulating layer 5a includes SiO 2 For example, the first insulating layer 5a can be formed by plasma deposition. The upper surface 21 of the base semiconductor layer 2 is a polar plane. The upper surface 322 of the shielding portion 32 is a semi-polar plane. The side surface 311 of the main body portion 31 is a non-polar plane. Because the upper surface 21 of the base semiconductor layer 2 and the upper surface 322 of the shielding portion 32 are not covered by the shielding portion 32, as shown in FIG. Fig. 5F As shown, the insulating material is deposited on the upper surface 21 of the base semiconductor layer 2 and the upper surface 322 of the shielding portion 32 to form the first insulating layer 5a (e.g., the first portion 51 and the second portion 52). Because the width of the shielding portion 32 in the second direction D2 is greater than the width of the main body portion 31, the shielding portion 32 serves as a blocking unit (e.g., a mask) that prevents the first insulating layer 5a from being formed on the side surface 311 of the main body portion 31. Under the low step coverage condition, the process conditions (such as the process temperature and the process pressure) can be adjusted so that the insulating material is not deposited on the side surface 311 of the main body portion 31 due to the shadow effect of the shielding portion 32. As a result, no insulating material is deposited on the side surface 311 of the main body portion 31, and the first insulating layer 5a can be formed on the upper surface 21 of the base semiconductor layer 2 and the upper surface 322 of the shielding portion 32.

[0078] Next, if Figure 5G As shown, the light emitting portion 4 is formed on the side surface 311 (which is a non-polar plane) of the main body portion 31. The light emitting portion 4 may include a III-V nitride semiconductor material (e.g., a GaN-based semiconductor material). The light emitting portion 4 may be formed by sequentially growing a first conductive type semiconductor layer 41, an active layer 42, and a second conductive type semiconductor layer 43 on the side surface 311 of the main body portion 31 using various methods such as HVPE, MBE, MOVPE, and MOCVD.

[0079] An n-GaN layer is grown on the side surface 311 of the main body portion 31 as a first conductive type semiconductor layer 41. The first conductive type semiconductor layer 41 grows from the side surface 311 of the main body portion 31 along the second direction D2. Because the upper surface 21 of the base semiconductor layer 2 and the upper surface 322 of the shielding portion 32 are at least partially covered by the first insulating layer 5a, no n-GaN layer is grown thereon. Next, an active layer 42 is grown on the first conductive type semiconductor layer 41. The active layer 42 may have a single quantum well or a multiple quantum well structure. The quantum well layer and the barrier layer may be paired in the form of InGaN / GaN, InGaN / InGaN, InGaN / AlGaN or InGaN / InAlGaN to form a quantum well structure. The active layer 42 grows from the first conductive type semiconductor layer 41 along the second direction D2. Next, a second conductive type semiconductor layer 43 that at least partially covers the active layer 42 is grown. The second conductive type semiconductor layer 43 grows from the active layer 42 in the second direction D2. For example, the second conductive type semiconductor layer 43 is a p-GaN layer.

[0080] Figure 1A and 1B The light emitting device 10 according to the embodiment shown can be Figures 5A to 5G A process of forming an electrode for supplying current to the first conductive type semiconductor layer 41 and the second conductive type semiconductor layer 43 may be further performed.

[0081] In order to obtain a core extending along the first direction D1 on the base semiconductor layer 2, a method of forming an n-GaN layer with a uniform thickness on the base semiconductor layer 2 and etching the n-GaN layer to form a core can be considered. In this case, the core formed by etching (i.e., the side surface of the main body) may become uneven. In order to obtain a main body with uniform side surfaces, an annealing process can be added after etching. In addition, after the main body is formed, a separate process may be required to form the shielding portion. According to the manufacturing method of some embodiments, GaN grows in a growth hole 6a defined by a mask layer 6. Therefore, a core 3 having a main body 31 can be formed, and the shape of the main body 31 of the core 3 can be easily controlled. In addition, a core 3 with a high aspect ratio can be formed. In addition, when GaN grows beyond the mask layer 6, a shielding portion 32 is naturally formed. In other words, the main body 31 and the shielding portion 32 are formed by the same process. Therefore, the manufacturing process can be simplified.

[0082] In order to obtain a light-emitting portion grown on a non-polar plane, the light-emitting portion can be prevented from growing on a polar plane and a semi-polar plane. To this end, a method of forming a mask for protecting the non-polar plane when forming a first insulating layer that at least partially covers the polar plane and the semi-polar plane and removing the mask after forming a first insulating layer that at least partially covers the polar plane and the semi-polar plane can be considered. The process of forming / removing the mask involves an etching process, which may damage the core. In addition, when the light-emitting portion is allowed to grow on a semi-polar plane, an additional process may be added, such as etching the grown light-emitting portion or forming a high resistance layer on the light-emitting portion, so that the light-emitting portion grown on the semi-polar plane does not emit light. The additional process may cause damage or degradation to the performance of the manufactured light-emitting device.

[0083] According to the manufacturing method of some embodiments, when forming the first insulating layer 5a that at least partially covers the upper surface 21 of the base semiconductor layer 2 (which is a polar plane) and the upper surface 322 of the shielding portion 32 (which is a semi-polar plane), the shielding portion 32 of the core 3 is used as a mask to protect the side surface 311 (which is a non-polar plane) of the main body portion 31. Therefore, the process of forming / removing the mask to protect the non-polar plane can be omitted, and therefore, the manufacturing process can be simplified, the manufacturing cost can be reduced, and the risk of damaging the core 3 in the manufacturing process can be reduced.

[0084] The main body portion 31 includes the same material as the first conductive type semiconductor layer 41 (e.g., n-GaN). Therefore, the lattice mismatch between the main body portion 31 and the first conductive type semiconductor layer 41 can be minimized, and therefore, the first conductive type semiconductor layer 41 grown with good quality and the active layer 42 grown on the first conductive type semiconductor layer 41 can be obtained. In addition, the side surface 311 of the main body portion 31 is a non-polar plane. Therefore, the problem of reducing the internal quantum efficiency due to the internal magnetic field can be solved, and the polarization due to the piezoelectric field effect can be suppressed, thereby suppressing the QCSE. Thus, a light-emitting portion 4 with increased internal quantum efficiency can be achieved.

[0085] Fig. 6A and Figure 6B 1 is a diagram showing a method of manufacturing a light emitting device 10 according to an embodiment. Figures 5A to 5G The manufacturing method shown in FIG. 1 is different from that of the embodiment, and repeated description will be omitted.

[0086] First, execute the above Figures 5A to 5E The result is Figure 5E As shown, a core 3 is formed, which includes a body portion 31 extending from the upper surface 21 of the base semiconductor layer 2 in the first direction D1 and a shielding portion 32 having a width in the second direction D2 greater than that of the body portion 31 in the second direction D2.

[0087] Next, the first insulating layer 5a and the second insulating layer 5b are formed. The first insulating layer 5a and the second insulating layer 5b may include an insulating material (eg, SiO 2 、TiO 2 、Si 3 N 4 、Al 2 O 3 、TiN、AlN、ZrO 2 , TiAlN or TiSiN). In some embodiments, the first insulating layer 5a and the second insulating layer 5b include SiO 2 . For example, the first insulating layer 5a and the second insulating layer 5b may be formed by plasma deposition. The first insulating layer 5a is formed on the upper surface 21 (which is a polar plane) of the base semiconductor layer 2 and the upper surface 322 (which is a semi-polar plane) of the shielding portion 32, and the second insulating layer 5b is formed to at least partially cover a portion of the side surface 311 (which is a non-polar plane) of the main body portion 31 adjacent to the base semiconductor layer 2. Because the upper surface 21 of the base semiconductor layer 2 and the upper surface 322 of the shielding portion 32 are not covered by the shielding portion 32, the insulating material is deposited on the upper surface 21 of the base semiconductor layer 2 and the upper surface 322 of the shielding portion 32 to form the first insulating layer 5a including the first portion 51 and the second portion 52. Because the width of the shielding portion 32 in the second direction D2 is greater than the width of the main body portion 31, the side surface 311 of the main body portion 31 is at least partially covered by the shielding portion 32. Under the low step coverage condition, the process conditions (such as process temperature and process pressure) may be adjusted so that the insulating material is not deposited on the adjacent portion (e.g., on the side surface 311 of the body portion 31) due to the shadow effect of the shielding portion 32. Figure 3 on a portion of the portion 390 above the portion 392) above the portion 390, and as Fig. 6A As shown by the arrow in , the insulating material is deposited on a portion of the side surface 311 of the body portion 31 adjacent to the base semiconductor layer 2. As a result, the first insulating layer 5a may be formed on the upper surface 21 of the base semiconductor layer 2 and the upper surface 322 of the shielding portion 32, and the second insulating layer 5b may be formed on a portion of the side surface 311 of the body portion 31 adjacent to the base semiconductor layer 2.

[0088] Then, if Figure 6B As shown in FIG. 1 , a process of forming the light emitting portion 4 is performed. The process of forming the light emitting portion 4 is similar to Figure 5GThe same process as shown is adopted. The light-emitting portion 4 is formed on a part of the side surface 311 of the main body portion 31 that is located above the portion adjacent to the base semiconductor layer 2 and on which the second insulating layer 5b is not formed (that is, the light-emitting portion 4 is formed on the portion between the second insulating layer 5b and the lower surface 321 of the shielding portion 32). As a result, a light-emitting device 10 according to Figure 3 the embodiment shown can be manufactured.

[0089] 7A to 7E FIG. is a diagram showing a method of manufacturing the light-emitting device 10 according to an embodiment. Hereinafter, the differences from the embodiment of the manufacturing method shown in Figures 5A to 5G will be mainly described, and repeated descriptions will be omitted.

[0090] First, as Figure 5A shown, a base semiconductor layer 2 is formed on a substrate 1. The base semiconductor layer 2 may include a Group III-V nitride semiconductor material (e.g., a GaN-based semiconductor material). The base semiconductor layer 2 may be a first-conductive semiconductor layer (e.g., an n-GaN layer). For example, GaN may be grown on the substrate 1 and doped with an n-type impurity such as Si, Ge, Se, or Te to form the base semiconductor layer 2 (which is an n-GaN layer).

[0091] Next, a mask layer 6 is formed. Referring to Fig. 7A , a mask layer is formed that defines growth holes (e.g., growth holes 6a1, 6a2, and 6a3) having different widths in the second direction D2 on the base semiconductor layer 2. The widths of the growth holes 6a1, 6a2, and 6a3 in the second direction D2 are S11, S21, and S31, respectively, and may be S11 < S21 < S31. For example, after forming a mask layer 6 that completely covers the upper surface 21 of the base semiconductor layer 2, the mask layer 6 may be etched by a photolithography method (e.g., a photolithography method or an electron beam lithography method). Thus, growth holes 6a1, 6a2, and 6a3 can be formed in the mask layer 6. The growth holes 6a1, 6a2, and 6a3 may have various shapes such as circular, elliptical, polygonal, and stripe shapes. The upper surface 21 of the base semiconductor layer 2 is exposed by the growth holes 6a1, 6a2, and 6a3. The mask layer 6 may include SiO 2 、TiO 2 、Si 3 N 4 、Al 2 O 3 、TiN、AlN、ZrO 2 、TiAlN, or TiSiN, etc. For example, after forming a SiO 2 layer that completely covers the upper surface 21 of the base semiconductor layer 2, the SiO 2The mask layer 6 is formed to form growth holes 6a1, 6a2, and 6a3 exposing the upper surface 21 of the base semiconductor layer 2. The height of the mask layer 6 in the first direction D1 may correspond to the height of the main body portion 31 of the core 3 to be formed later in the first direction D1.

[0092] Next, if Figure 7B As shown, the cores 3-1, 3-2 and 3-3 are formed by growing from the upper surface 21 of the base semiconductor layer 2 through the growth holes 6a1, 6a2 and 6a3. The formation of the cores 3-1, 3-2 and 3-3 can be performed in the same manner as described above. Figure 5D and 5E . For example, GaN can be grown from the upper surface 21 of the base semiconductor layer 2 through the growth holes 6a1, 6a2, and 6a3. As GaN grows from the upper surface 21 of the base semiconductor layer 2 along the first direction D1 to fill the insides of the growth holes 6a1, 6a2, and 6a3, body portions 31-1, 31-2, and 31-3 extending from the upper surface 21 of the base semiconductor layer 2 along the first direction D1 are formed. After the entire insides of the growth holes 6a1, 6a2, and 6a3 are filled, GaN gradually grows from the upper ends of the body portions 31-1, 31-2, and 31-3 along the first direction D1, as shown in FIG. Figure 5D , and also grows in a second direction D2 orthogonal to the first direction D1 along the upper surface 61 of the mask layer 6. The shape of the shielding portion 32 may be determined by the lattice structure of the material forming the core 3. Shielding portions 32-1, 32-2, and 32-3 are formed on the upper surface 61 of the mask layer 6, and the shielding portions 32-1, 32-2, and 32-3 have a width in the second direction D2 greater than the width of the body portions 31-1, 31-2, and 31-3 in the second direction D2.

[0093] Next, the mask layer 6 is removed (eg, by a wet etching process). Figure 7CAs shown, the upper surface 21 of the base semiconductor layer 2 can be exposed, and cores 3-1, 3-2 and 3-3 can be formed, and the cores 3-1, 3-2 and 3-3 respectively include body parts 31-1, 31-2 and 31-3 extending from the upper surface 21 of the base semiconductor layer 2 in the first direction D1 and shielding parts 32-1, 32-2 and 32-3 having a width in the second direction D2 greater than the width of the body parts 31-1, 31-2 and 31-3. The cores 3-1, 3-2 and 3-3 may include the same material as the base semiconductor layer 2 (e.g., a first conductive type semiconductor material). In some embodiments, the base semiconductor layer 2 is a first conductive type semiconductor layer based on GaN (e.g., an n-GaN layer). The cores 3-1, 3-2 and 3-3 including GaN may be doped with n-type impurities such as Si, Ge, Se or Te. Therefore, the cores 3-1, 3-2 and 3-3 may include the same n-GaN as the base semiconductor layer 2.

[0094] Next, the first insulating layer 5a and the second insulating layer 5b are formed. Fig.7D The first insulating layer 5a and the second insulating layer 5b may include an insulating material (eg, SiO 2 、TiO 2 、Si 3 N 4 、Al 2 O 3 、TiN、AlN、ZrO 2 , TiAlN or TiSiN). In some embodiments, the first insulating layer 5a and the second insulating layer 5b include SiO 2. For example, the first insulating layer 5a and the second insulating layer 5b may be formed by plasma deposition. The first insulating layer 5a is formed on the upper surface 21 of the base semiconductor layer 2 (which is a polar plane) and the upper surfaces 322-1, 322-2, and 322-3 of the shielding portions 32-1, 32-2, and 32-3 (which are semi-polar planes). The second insulating layer 5b is formed to at least partially cover the side surfaces 311-1, 311-2, and 311-3 of the body portions 31-1, 31-2, and 31-3 (which are non-polar planes) adjacent to the base semiconductor layer 2. Since the upper surface 21 of the base semiconductor layer 2 and the upper surfaces 322-1, 322-2, and 322-3 of the shielding portions 32-1, 32-2, and 32-3 are not covered by the shielding portions 32-1, 32-2, and 32-3, the insulating material is deposited on the upper surface 21 of the base semiconductor layer 2 and the upper surfaces 322-1, 322-2, and 322-3 of the shielding portions 32-1, 32-2, and 32-3 to form the first portion 51 and the second portion 52-1, 52-2, and 52-3. Since the width of the shielding portions 32-1, 32-2, and 32-3 in the second direction D2 is greater than the width of the main body portions 31-1, 31-2, and 31-3, the side surfaces 311-1, 311-2, and 311-3 of the main body portions 31-1, 31-2, and 31-3 are at least partially covered by the shielding portions 32-1, 32-2, and 32-3. like Fig.7DAs shown by the arrows in the figure, the insulating material is deposited on the portions of the side surfaces 311-1, 311-2, and 311-3 of the main body portions 31-1, 31-2, and 31-3 that are adjacent to the upper surface 21 of the base semiconductor layer 2. Accordingly, the second insulating layers 5b-1, 5b-2, and 5b-3 can be formed on the side surfaces 311-1, 311-2, and 311-3 of the main body portions 31-1, 31-2, and 31-3. Process conditions, such as process temperature and process pressure, can be determined such that the insulating material can be partially deposited on the portions of the side surfaces 311-1, 311-2, and 311-3 of the main body portions 31-1, 31-2, and 31-3 that are adjacent to the upper surface 21 of the base semiconductor layer 2. The widths of the shielding portions 32-1, 32-2, and 32-3 in the second direction D2 are substantially the same. The widths of the main body portions 31-1, 31-2, and 31-3 in the second direction D2 are different from each other and have the relationship of S11 < S21 < S31. Therefore, the degree of the shadow effect of the shielding portions 32-1, 32-2, and 32-3 on each of the main body portions 31-1, 31-2, and 31-3 varies. Accordingly, the heights of the second insulating layers 5b-1, 5b-2, and 5b-3 formed on the side surfaces 311-1, 311-2, and 311-3 of the main body portions 31-1, 31-2, and 31-3 vary. When the heights of the second insulating layers 5b-1, 5b-2, and 5b-3 in the first direction D1 are H11, H21, and H31, respectively, H11 < H21 < H31.

[0095] Next, as Fig. 7E shown, a process of forming the light-emitting portions 4-1, 4-2, and 4-3 on the side surfaces 311-1, 311-2, and 311-3 (which are non-polar planes) of the main body portions 31-1, 31-2, and 31-3 is performed. The process of forming the light-emitting portions 4-1, 4-2, and 4-3 can be the same as the process described with reference to Figure 5G . The structure of each of the light-emitting portions 4-1, 4-2, and 4-3 can be the same as that of the light-emitting portion 4. The light-emitting portions 4-1, 4-2, and 4-3 are formed on the portions of the side surfaces 311-1, 311-2, and 311-3 of the main body portions 31-1, 31-2, and 31-3 that are not covered by the second insulating layers 5b-1, 5b-2, and 5b-3. Accordingly, the light-emitting portions 4-1, 4-2, and 4-3 can be formed to have different heights in the first direction D1 and different widths in the second direction D2.

[0096] As a result, a light-emitting device 10 according to the Figure 4 shown embodiment can be manufactured.

[0097] Hereinafter, various examples of an electronic device to which the above-described light-emitting device 10 is applied will be described. The electronic device can be a display or various devices including a display.

[0098] Figure 8 is a diagram showing a display according to an embodiment. Figure 8 , the display may include a display panel 7110 and a controller 7160. The display panel 7110 has a light emitting structure 7112 and a driving circuit 7115 that turns on and off the light emitting structure 7112. The light emitting structure 7112 may include a Fig. 7E The plurality of light emitting devices 10 described above can be arranged in a two-dimensional array, for example. The driving circuit 7115 has a plurality of switching elements for independently turning on and off the plurality of light emitting devices 10. The controller 7160 inputs on-off switching signals of the plurality of light emitting devices 10 to the driving circuit 7115 according to the image signal.

[0099] Fig. 9 is a block diagram showing an electronic device including a display according to an embodiment. Fig. 9 , an electronic device 8201 may be provided in a network environment 8200. In the network environment 8200, the electronic device 8201 may communicate with another electronic device 8202 through a first network 8298 (short-range wireless communication network, etc.), or communicate with another electronic device 8204 and / or a server 8208 through a second network 8299 (long-range wireless communication network, etc.). The electronic device 8201 may communicate with the electronic device 8204 through the server 8208. The electronic device 8201 may include a processor 8220, a memory 8230, an input device 8250, a sound output device 8255, a display device 8260, an audio module 8270, a sensor module 8276, an interface 8277, a haptic module 8279, a camera module 8280, a power management module 8288, a battery 8289, a communication module 8290, a user identification module 8296, and / or an antenna module 8297. The electronic device 8201 may omit some of these components, or may further include other components. Some of these components may be implemented as integrated circuits. For example, the sensor module 8276 (fingerprint sensor, iris sensor, illumination sensor, etc.) may be embedded in the display device 8260 (display, etc.).

[0100] The processor 8220 may execute software (program 8240, etc.) to control one or more components (hardware, software, etc.) of the electronic device 8201 connected to the processor 8220 and perform various data processing or computing operations. As part of the data processing or computing operations, the processor 8220 may be configured to load commands and / or data received from other components (sensor module 8276, communication module 8290, etc.) into the volatile memory 8232, process the commands and / or data stored in the volatile memory 8232, and store the resulting data in the non-volatile memory 8234. The processor 8220 may include a main processor 8221 (central processing unit, application processor, etc.) and an auxiliary processor 8223 (graphics processing unit, image signal processor, sensor hub processor, communication processor, etc.), which may operate separately from the main processor 8221 or operate together with the main processor 8221. The auxiliary processor 8223 may use less power than the main processor 8221 and may perform dedicated functions.

[0101] When the main processor 8221 is in an inactive state (e.g., a sleep state), the auxiliary processor 8223 may operate in place of the main processor 8221, and when the main processor 8221 is in an active state (e.g., an application running state), the auxiliary processor 8223 may operate together with the main processor 8221 and may control functions and / or states related to one or more components (display device 8260, sensor module 8276, communication module 8290, etc.) of the electronic device 8201. The auxiliary processor 8223 (image signal processor, communication processor, etc.) may be implemented as part of other function-related components (camera module 8280, communication module 8290, etc.).

[0102] The memory 8230 may store various data required by the components (processor 8220, sensor module 8276, etc.) of the electronic device 8201. The data may include, for example, software (program 8240, etc.) and input data and / or output data about commands related to the software. The memory 8230 may include a volatile memory 8232 and / or a non-volatile memory 8234.

[0103] The program 8240 may be stored as software in the memory 8230 , and may include an operating system 8242 , middleware 8244 , and / or an application 8246 .

[0104] The input device 8250 may receive commands and / or data to be used for components (processor 8220, etc.) of the electronic device 8201 from outside (user, etc.) of the electronic device 8201. The input device 8250 may include a remote controller, a microphone, a mouse, a keyboard, and / or a digital pen (stylus, etc.).

[0105] The sound output device 8255 can output a sound signal to the outside of the electronic device 8201. The sound output device 8255 may include a speaker and / or a receiver. The speaker may be used for general purposes, such as reproducing multimedia content or recording content, and the receiver may be used to receive an incoming call. The receiver may be integrated as part of the speaker or provided separately from the speaker.

[0106] The display module 8260 may visually provide data to the outside of the electronic device 8201. The display device 8260 may include a display, a holographic device, or a control circuit configured to control a projector and corresponding devices. The display device 8260 may include a reference Figure 8 The display device 8260 may include a display as shown in FIG. 1 to FIG. Fig. 7E The light emitting device 10 described above may include a touch circuit configured to sense a touch operation and / or a sensor circuit (pressure sensor, etc.) configured to measure the strength of a force generated by a touch operation.

[0107] The audio module 8270 can convert sound into an electrical signal or convert an electrical signal into sound. The audio module 8270 can obtain sound via the input device 8250, or can output sound via a speaker and / or earphone of a sound output device 8255 and / or another electronic device (electronic device 8202, etc.) directly or wirelessly connected to the electronic device 8201.

[0108] The sensor module 8276 can sense the operating state (power, temperature, etc.) or external environment state (user state, etc.) of the electronic device 8201, and generate an electrical signal and / or data value corresponding to the sensed state. The sensor module 8276 may include a gesture sensor, a gyroscope sensor, an atmospheric pressure sensor, a magnetic sensor, an acceleration sensor, a grip sensor, a proximity sensor, a color sensor, an infrared (IR) sensor, a biometric sensor, a temperature sensor, a humidity sensor, and / or an illumination sensor.

[0109] The interface 8277 may support one or more designated protocols for the electronic device 8201 to be directly or wirelessly connected to another electronic device (electronic device 8202, etc.). The interface 8277 may include a high-definition multimedia interface (HDMI), a universal serial bus (USB) interface, a secure digital (SD) card interface, and / or an audio interface.

[0110] The connection terminal 8278 may include a connector through which the electronic device 8201 can be physically connected to another electronic device (electronic device 8202, etc.). The connection terminal 8278 may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (headphone connector, etc.).

[0111] The haptic module 8279 may convert an electrical signal into a mechanical stimulus (vibration, motion, etc.) or an electrical stimulus recognizable to a user via a sense of touch or motion. The haptic module 8279 may include a motor, a piezoelectric device, and / or an electrical stimulation device.

[0112] The camera module 8280 may capture still images and videos. The camera module 8280 may include a lens assembly including one or more lenses, an image sensor, an image signal processor, and / or a flash. The lens assembly included in the camera module 8280 may collect light emitted from an object whose image is to be captured.

[0113] The power management module 8288 may manage power supplied to the electronic device 8201. The power management module 8288 may be implemented as a part of a power management integrated circuit (PMIC).

[0114] The battery 8289 may supply power to the components of the electronic device 8201. The battery 8289 may include a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell.

[0115] The communication module 8290 may support the establishment of a direct (wired) communication channel and / or a wireless communication channel between the electronic device 8201 and other electronic devices (electronic device 8202, electronic device 8204, server 8208, etc.) and the communication performance through the established communication channel. The communication module 8290 may include one or more communication processors that operate separately from the processor 8220 (application processor, etc.) and support direct communication and / or wireless communication. The communication module 8290 may include a wireless communication module 8292 (a cellular communication module, a short-range wireless communication module, a global navigation satellite system (GNSS) communication module and / or a wired communication module 8294 (a local area network (LAN) communication module, a power line communication module, etc.). Among these communication modules, the corresponding communication module can communicate with other electronic devices through a first network 8298 (a short-range wireless communication network, such as Bluetooth, WiFi Direct or Infrared Data Association (IrDA)) or a second network 8299 (a long-range communication network, such as a cellular network, the Internet or a computer network (LAN, WAN, etc.)). The above-mentioned various types of communication modules can be integrated into a single component (a single chip, etc.) or implemented as multiple components (multiple chips). The wireless communication module 8292 can identify and verify the electronic device 8201 within the first network 8298 and / or the second network 8299 by using the user information (International Mobile Subscriber Identity (IMSI), etc.) stored in the user identification module 8296.

[0116] The antenna module 8297 can send signals and / or power to the outside (other electronic devices, etc.) or receive signals and / or power from the outside. The antenna may include a transmitter including a conductive pattern formed on a substrate (printed circuit board (PCB), etc.). The antenna module 8297 may include an antenna or multiple antennas. When the antenna module 8297 includes multiple antennas, an appropriate antenna suitable for a communication method used in a communication network such as the first network 8298 and / or the second network 8299 can be selected. Through the selected antenna, signals and / or power can be sent or received between the communication module 8290 and other electronic devices. In addition to the antenna, another component (radio frequency integrated circuit (RFIC), etc.) may also be included in the antenna module 8297.

[0117] Some components of the electronic device 8201 can be interconnected and exchange signals (commands, data, etc.) with each other through a communication scheme executed between peripheral devices (bus, general purpose input and output (GPIO), serial peripheral interface (SPI), mobile industry processor interface (MIPI), etc.).

[0118] Commands or data may be sent or received between the electronic device 8201 and another external electronic device 8204 through a server 8208 connected to the second network 8299. The other electronic devices 8202 and 8204 may be electronic devices of isomorphic or heterogeneous types relative to the electronic device 8201. All or part of the operations performed in the electronic device 8201 may be performed by one or more of the other electronic devices 8202, 8204, and 8208. For example, when the electronic device 8201 must perform a function or service, instead of directly performing the function or service, one or more other electronic devices may be requested to perform part or all of the function or service. The one or more other electronic devices that receive the request may perform additional functions or services related to the request, and may send the results of the execution to the electronic device 8201. To this end, cloud computing, distributed computing, and / or client-server computing technologies may be used.

[0119] The electronic device 8201 can be applied to various devices. The various components of the electronic device 8201 described above can be appropriately changed according to the function of the device, and other appropriate components can be added to perform the function of the device. Hereinafter, an example application of the electronic device 8201 is described.

[0120] Fig.10 9100 is a diagram showing a mobile device as an example of an electronic device according to an embodiment. The mobile device 9100 may include a display device 9110. The display device 9110 may include a reference Figure 8 The display device 9110 may also include a display as shown in FIG. 1 to FIG. Fig. 7EThe light emitting device 10 is described. The display device 9110 may also have a foldable structure, such as a multi-folding structure.

[0121] Fig.11 1 is a diagram showing a head-up display device for a vehicle as an example of an electronic device according to an embodiment. The head-up display device 9200 for a vehicle may include a display 9210 provided in an area of ​​the vehicle and an optical path changing member 9220 configured to change an optical path so that a driver can see an image generated at the display 9210. The display 9210 may include a reference Figure 8 The display 9210 may include the display described in reference to FIG. Fig. 7E A light emitting device 10 is described.

[0122] Fig.12 9300 is a diagram showing augmented reality glasses or virtual reality glasses as an example of an electronic device according to an embodiment. The augmented reality glasses (or virtual reality glasses) 9300 may include a projection system 9310 configured to form an image and an element 9320 configured to guide the image from the projection system 9310 to the user's eyes. The projection system 9310 may include a reference Figure 8 The projection system 9310 may include a display as described in FIG. Fig. 7E A light emitting device 10 is described.

[0123] Fig.13 9400 is a diagram showing a sign as an example of an electronic device according to an embodiment. The sign 9400 may include a reference Figure 8 The display described in FIG. 9400 may include a display as shown in FIG. 1 to FIG. Fig. 7E The light emitting device 10 described above. The sign 9400 can be used for outdoor advertising using a digital information display, and the content of the advertisement can be controlled through a network. The sign 9400 can be, for example, a reference Fig. 9 The electronic device described is implemented.

[0124] Fig.14 9500 is a diagram showing a wearable display as an example of an electronic device according to an embodiment. The wearable display 9500 may include a reference Figure 8 The wearable display 9500 may include the display of FIG. Fig. 7E The light emitting device described herein can be referred to as Fig. 9 The electronic device described is implemented.

[0125] The light emitting device according to the embodiment or a display including the light emitting device may also be applied to various products such as a rollable television (TV), a stretchable display, and the like.

[0126] According to the embodiments of the above-described light emitting device and the method for manufacturing the same, the polarization phenomenon can be suppressed and the light emitting efficiency can be improved. According to the embodiments of the above-described light emitting device and the method for manufacturing the same, a light emitting device having an increased emission area can be realized.

[0127] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for the purpose of limitation. The description of features or aspects within each embodiment should generally be considered to be applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and detail may be made therein without departing from the spirit and scope defined by the appended claims.

[0128] CROSS-REFERENCE TO RELATED APPLICATIONS

[0129] This application is based on and claims the benefit of priority from Korean Patent Application No. 10-2023-0092470 filed in the Korean Intellectual Property Office on July 17, 2023, the disclosure of which is incorporated herein by reference in its entirety.

Claims

1. A light emitting device, comprising: a base semiconductor layer; At least one core is provided on the base semiconductor layer, the at least one core comprising: a main body portion extending in a first direction; and a shielding portion provided at an upper end of the main body portion, wherein a width of a lower surface of the shielding portion in a second direction orthogonal to the first direction is greater than a width of the main body portion in the second direction; a first insulating layer provided on an upper surface of the base semiconductor layer and an upper surface of the shielding portion; and At least one light emitting portion is provided on a side surface of the body portion. 2 . The light emitting device according to claim 1 , wherein the width of the shielding portion in the second direction gradually decreases from the lower surface of the shielding portion toward an upper end of the shielding portion in the first direction. The light emitting device according to claim 1 , wherein the side surface of the body portion is a non-polar plane.

4. The light emitting device according to claim 1, wherein the side surface of the body portion includes a first portion adjacent to the base semiconductor layer and a second portion above the first portion in the first direction, in, The light emitting device further includes a second insulating layer provided on the first portion adjacent to the base semiconductor layer on the side surface of the body portion, The at least one light emitting portion is provided on the second portion of the side surface of the body portion, the second portion being located above the first portion of the side surface of the body portion, The second insulating layer is not formed on the second portion of the side surface of the main body portion.

5. The light emitting device according to claim 1, wherein: The base semiconductor layer comprises the same material as that of the at least one core.

6. The light emitting device according to claim 1, wherein the at least one light emitting portion comprises: a first conductivity type semiconductor layer provided on the side surface of the body portion; an active layer including a quantum well structure and provided on the first conductive type semiconductor layer; as well as A second conductive type semiconductor layer is provided on the active layer.

7. The light emitting device according to claim 6, wherein: The base semiconductor layer and the at least one core include the same material as that of the first conductive type semiconductor layer. 8 . The light emitting device of claim 1 , wherein the base semiconductor layer, the at least one core, and the at least one light emitting portion comprise a GaN-based semiconductor material.

9. The light emitting device according to claim 1, wherein the at least one core comprises a plurality of cores, the plurality of cores comprising body portions having different widths in the second direction, and wherein the at least one light emitting portion includes a plurality of light emitting portions respectively provided on the plurality of cores. 10 . The light emitting device according to claim 9 , wherein the plurality of light emitting portions have different heights in the first direction. The light emitting device according to claim 9 , wherein the plurality of light emitting portions have different widths in the second direction.

12. The light emitting device according to claim 9, wherein each side surface of each main body portion of the plurality of cores comprises a first portion adjacent to the base semiconductor layer and a second portion above the first portion in the first direction, in, The light emitting device further includes a plurality of second insulating layers respectively provided on the first portions of the side surfaces of the body portions of the plurality of cores adjacent to the base semiconductor layer, and The plurality of second insulating layers have different heights in the first direction.

13. The light emitting device of claim 9, wherein the plurality of light emitting portions are configured to emit light of different colors. The light emitting device of claim 9 , wherein each of the plurality of light emitting portions comprises a different indium content.

15. A display comprising: Display panel, including: A light emitting structure comprising a plurality of light emitting devices; and a driving circuit configured to turn on and off the light emitting structure; and a controller configured to input on-off switching signals for the plurality of light emitting devices to the driving circuit based on an image signal, Wherein, each of the plurality of light emitting devices comprises: a base semiconductor layer; A core is provided on the base semiconductor layer, the core comprising: a main body portion extending in a first direction; and a shielding portion provided at an upper end of the main body portion, wherein a width of a lower surface of the shielding portion in a second direction orthogonal to the first direction is greater than a width of the main body portion in the second direction; a first insulating layer provided on an upper surface of the base semiconductor layer and an upper surface of the shielding portion; and A light emitting portion is provided on a side surface of the main body portion.

16. A method for manufacturing a light emitting device, the method comprising: forming a base semiconductor layer on a substrate; forming a mask layer defining at least one growth hole in the base semiconductor layer; forming at least one core, comprising: a main body portion at least partially filling the at least one growth hole and extending in a first direction; and a shielding portion extending from the main body portion above the upper surface of the mask layer, wherein a width of a lower surface of the shielding portion in a second direction orthogonal to the first direction is greater than a width of the main body portion in the second direction; removing the mask layer; forming a first insulating layer on an upper surface of the base semiconductor layer and an upper surface of the shielding portion; and At least one light emitting portion is formed on a side surface of the body portion.

17. The method according to claim 16, wherein: The base semiconductor layer, the at least one core, and the at least one light emitting portion include a GaN-based semiconductor material.

18. The method according to claim 16, wherein: The base semiconductor layer comprises the same material as that of the at least one core.

19. The method according to claim 16, wherein: The side surface of the body portion includes a first portion adjacent to the base semiconductor layer and a second portion above the first portion in the first direction, The method further comprises: before forming the at least one light emitting portion, forming at least one second insulating layer on the first portion of the side surface of the main body portion, wherein the at least one light emitting portion is formed on the second portion of the side surface of the main body portion, the second portion is located above the first portion of the side surface of the main body portion, and Wherein the at least one second insulating layer is not formed on the second portion of the side surface of the body portion.

20. The method according to claim 19, wherein: The at least one growth hole comprises a plurality of growth holes having different sizes, wherein the at least one core comprises a plurality of cores, wherein the at least one light emitting portion comprises a plurality of light emitting portions, wherein the at least one second insulating layer comprises a plurality of second insulating layers, wherein the plurality of cores include body portions having different widths in the second direction, the body portions being formed in the plurality of growth holes, respectively, wherein the plurality of second insulating layers have different heights in the first direction, and the plurality of second insulating layers correspond to the plurality of cores respectively, and wherein the plurality of light emitting portions are formed on portions of a side surface of a body portion of each of the plurality of cores where a corresponding second insulating layer of the plurality of second insulating layers is not formed.

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