Light emitting diode and light emitting device

Abstract

The invention relates to a light emitting diode and a light emitting device. The light-emitting diode comprises a semiconductor laminated layer which comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially laminated from bottom to top; the insulating layer is formed on the second semiconductor layer; the transparent conducting layer is formed on the second semiconductor layer and covers the insulating layer; the protective layer is formed on the transparent conductive layer and is provided with an opening which exposes a part of the upper surface of the transparent conductive layer; the second electrode is formed on the protective layer, comprises a bonding pad part and an extension part, and is electrically connected with the transparent conductive layer through the opening of the protective layer; the second electrode extension portion has a first end connected with the second electrode pad portion and a second end away from the second electrode pad portion, and the insulating layer is only formed under the second end of the second electrode extension portion. According to the invention, the insulating layer is only arranged at one end far away from the second electrode bonding pad part, so that the reliability and the luminous efficiency of the chip are improved, and meanwhile, the voltage rise is avoided.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a light emitting diode and a light emitting device. Background Art

[0002] Light Emitting Diode (LED) is usually made of semiconductors such as GaN, GaAs, GaP, GaAsP, etc. Its core is a PN junction with luminous properties. Under forward voltage, electrons are injected from the N region into the P region, and holes are injected from the P region into the N region. Some of the minority carriers that enter the other region recombine with the majority carriers to emit light. LED has the advantages of high luminous intensity, high efficiency, small size, and long service life, and is considered to be one of the most promising light sources at present.

[0003] The currently known gallium nitride LED chip manufacturing process includes four processes such as table etching (MESA), making a transparent conductive layer (such as ITO), making a protective layer and making electrodes, or five processes such as table etching (MESA), making an insulating layer, making a transparent conductive layer (such as ITO), making a protective layer and making electrodes. At present, in the LED industry, in order to achieve effective current expansion, multiple extended electrode designs are generally adopted. In the existing four-step process, the charge is easily concentrated near the end of the extended electrode, which makes it easy for ESD explosion points and burns to occur in this area, thereby causing the chip to fail and die. In the existing five-step process, an insulating layer is added as a current blocking layer, and the insulating layer is set corresponding to the extended electrode and is designed to be expanded outward, but the area of ​​the current blocking layer is too large, which often leads to an increase in voltage. Therefore, how to further optimize the design of the current blocking layer to improve the overall performance of the light-emitting diode chip is a technical problem that technicians in this field need to solve. Summary of the invention

[0004] In view of the defects and shortcomings of light-emitting diodes in the prior art, the present application provides a light-emitting diode and a light-emitting device to improve the reliability and light-emitting efficiency of the chip while avoiding an increase in the chip voltage.

[0005] One embodiment of the present invention provides a light emitting diode, comprising: The semiconductor stack comprises, from bottom to top, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked in sequence; an insulating layer formed on the second semiconductor layer; A transparent conductive layer is formed on the second semiconductor layer and covers the insulating layer; A protective layer formed on the transparent conductive layer and having an opening exposing a portion of the upper surface of the transparent conductive layer; A second electrode is formed on the protective layer, includes a pad portion and an extension portion, and is electrically connected to the transparent conductive layer through an opening of the protective layer; The invention is characterized in that the second electrode extension part has a first end connected to the second electrode pad part and a second end away from the second electrode pad part, and the insulating layer is only formed under the second end of the second electrode extension part.

[0006] According to another embodiment of the present invention, a light emitting device is provided, which adopts the light emitting diode described in any of the above embodiments.

[0007] The light-emitting diode provided by the present invention can avoid the occurrence of ESD explosion points due to excessive charge concentration at the end of the extended electrode due to the insulating layer only being set away from the second electrode pad portion, thereby improving the chip's anti-static impact capability and ensuring the reliability of the light-emitting diode; on the other hand, it can avoid direct current injection at the end of the extended electrode, improve the overall current uniformity of the light-emitting diode, and further improve the luminous efficiency of the light-emitting diode chip; in addition, it can also reduce the area of ​​the current blocking layer under the extended electrode, thereby avoiding the voltage increase of the chip.

[0008] Other features and advantages of the present invention will be set forth in the following description, and in part will be apparent from the description, or may be learned by practicing the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0010] Figure 1 A schematic top view of a light emitting diode provided in Embodiment 1 of the present invention; Figure 2 For along Figure 1 A schematic diagram of the cross-sectional structure of the A-A' line; Figure 3 for Figure 2 A local enlarged schematic diagram of the box area; Figure 4 For along Figure 1 Schematic diagram of the cross-sectional structure of the BB' line; Figure 5 A light mask diagram for making a light emitting diode provided by the present invention; Figure 6 A schematic diagram of a current flow path of a light emitting diode provided by the present invention; Figure 7 A schematic top view of another light emitting diode provided in the first embodiment of the present invention; Figure 8 For along Figure 7 A schematic diagram of the cross-sectional structure of the A-A' line; Fig. 9 A schematic top view of another light emitting diode provided in the first embodiment of the present invention; Fig.10 For along Fig. 9 A schematic diagram of the cross-sectional structure of the A-A' line; Fig.11 A schematic top view of another light emitting diode provided in the first embodiment of the present invention; Fig.12 For along Fig.11 A schematic diagram of the cross-sectional structure of the A-A' line; Fig.13 A schematic top view of a light emitting diode provided in the second embodiment of the present invention; Fig.14 For along Fig.13 A schematic diagram of the cross-sectional structure of the A-A' line; Fig.15 A schematic top view of a light emitting diode provided in Embodiment 3 of the present invention; Fig.16 For along Fig.15 A schematic diagram of the cross-sectional structure of the A-A' line; Fig.17 A schematic top view of a light emitting diode provided in Embodiment 4 of the present invention; Fig.18 For along Fig.17 A schematic diagram of the cross-sectional structure of the A-A' line; Fig.19 A schematic top view of a light emitting diode provided in Embodiment 5 of the present invention; Fig. 20 This is a top view schematic diagram of another light emitting diode provided in the fifth embodiment of the present invention.

[0011] Reference numerals: 10-substrate; 12-semiconductor stack; 123-first semiconductor layer; 124-light-emitting layer; 125-second semiconductor layer; 14-insulating layer; 16-transparent conductive layer; 18-protective layer; 21-first electrode; 211-first electrode pad portion; 212-first electrode extension portion; 22-second electrode; 221-second electrode pad portion; 222-second electrode extension portion; 2221-first end of the second electrode extension portion; 2222-second end of the second electrode extension portion; 2220-end of the second electrode extension portion; 31-first opening; 310-antenna; 32-second opening; 321-first opening portion; 322-second opening portion; 33-third opening; 34 fourth opening; 35-fifth opening; 36-sixth opening; 40-through hole. DETAILED DESCRIPTION

[0012] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention; the technical features designed in different implementation modes of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0013] The present invention provides a light emitting diode, comprising: The semiconductor stack comprises, from bottom to top, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked in sequence; an insulating layer formed on the second semiconductor layer; A transparent conductive layer is formed on the second semiconductor layer and covers the insulating layer; A protective layer formed on the transparent conductive layer and having an opening exposing a portion of the upper surface of the transparent conductive layer; A second electrode is formed on the protective layer, includes a pad portion and an extension portion, and is electrically connected to the transparent conductive layer through an opening of the protective layer; The invention is characterized in that the second electrode extension part has a first end connected to the second electrode pad part and a second end away from the second electrode pad part, and the insulating layer is only formed under the second end of the second electrode extension part.

[0014] The present invention arranges the insulating layer only under the second end of the second electrode extension portion away from the second electrode pad portion, and more preferably, the insulating layer is only arranged under the end of the second electrode extension portion. Firstly, it can avoid the occurrence of ESD explosion points due to excessive charge concentration at the end of the extension electrode, thereby improving the chip's anti-static impact capability and thus ensuring the reliability of the light-emitting diode; secondly, it can avoid the direct injection of current at the end of the extension electrode, so that the current at the end of the extension electrode is as uniform as possible to spread around, promote the lateral expansion of the current, improve the overall current uniformity of the light-emitting diode, and thus improve the luminous efficiency of the light-emitting diode chip; in addition, it can also cancel the unnecessary current blocking layer under the extension electrode, thereby effectively reducing the area of ​​the current blocking layer and avoiding the voltage increase of the chip.

[0015] In one embodiment, the insulating layer and the second electrode extension portion have an overlapping portion, and the length of the overlapping portion accounts for 1% to 50% of the length of the second electrode extension portion.

[0016] In one embodiment, the insulating layer and the second electrode extension portion have an overlapping portion, and an area of ​​the overlapping portion accounts for 1% to 50% of an area of ​​the second electrode extension portion.

[0017] By controlling the area of ​​the current blocking layer below the extended electrode through the length or area ratio of the overlapping portion between the insulating layer and the second electrode extension portion, a voltage increase caused by setting a current blocking layer with too much area can be avoided.

[0018] In one embodiment, the insulating layer and the second electrode extension portion directly above the insulating layer have a width difference, and the width difference gradually increases in the direction from the first end of the second electrode extension portion to the second end of the second electrode extension portion. Through the gradual change design of the width difference, the phenomenon of excessive concentration of charge distribution at the second end of the second electrode extension portion far away from the second electrode pad portion under electrostatic impact can be further improved, and current crowding near the second end due to position offset from the insulating layer can be avoided, thereby further improving the anti-static impact performance of the chip and improving the reliability of the electrode structure as a whole.

[0019] In one embodiment, the insulating layer is composed of a series of block structures. By configuring the insulating layer to be composed of a series of block structures, the current can be diffused more evenly at the end of the extended electrode, further improving the overall current uniformity of the light-emitting diode.

[0020] In one embodiment, the protective layer forms a first opening and a second opening in the pad portion and the extension portion of the second electrode, respectively, exposing a portion of the upper surface of the second semiconductor layer located at the second electrode pad portion and a portion of the upper surface of the transparent conductive layer located at the second electrode extension portion.

[0021] In one embodiment, the transparent conductive layer forms a third opening at the pad portion of the second electrode to expose a portion of the upper surface of the second semiconductor layer at the second electrode pad portion, and a size of the third opening is smaller than a size of the second electrode pad portion.

[0022] In one embodiment, a size of the first opening is smaller than a size of the third opening, a pad portion of the second electrode contacts the second semiconductor layer, and an extended portion of the second electrode contacts the transparent conductive layer.

[0023] Through the above arrangement, the second electrode pad portion can be electrically connected to the second semiconductor layer through the first opening of the protective layer and the third opening of the transparent conductive layer, and the second electrode extension portion can be in contact with the transparent conductive layer through the second opening of the protective layer, thereby being electrically connected to the second semiconductor layer. At the same time, by setting the size of the first opening smaller than the size of the third opening, the brightness of the light-emitting diode is further improved.

[0024] In one embodiment, the first opening is a ring-shaped structure, and the inner circle diameter and the outer circle diameter of the ring-shaped structure are both smaller than the diameter of the third opening, so as to further improve the brightness of the light-emitting diode.

[0025] In one embodiment, the protective layer further includes at least one feeler extending from the first opening to the periphery of the second electrode pad portion, exposing a portion of the upper surface of the transparent conductive layer, and at the position of the feeler, the pad portion of the second electrode is in contact with the second semiconductor layer and the transparent conductive layer at the same time. Through the feeler, the second electrode pad portion can be in contact with the transparent conductive layer, which can increase the contact area between the second electrode pad portion and the transparent conductive layer, which is beneficial to the diffusion of current, thereby further alleviating the current congestion effect on the second electrode and reducing the risk of metal precipitation and electrode burning.

[0026] In one embodiment, the protection layer has a plurality of second openings, and the second openings are sequentially arranged at intervals along an extending direction gradually away from the second electrode pad portion.

[0027] In one embodiment, the sizes of the plurality of second openings are the same.

[0028] In one embodiment, the sizes of the plurality of second openings increase in sequence along the extension direction gradually away from the second electrode pad portion. In the present invention, the sizes of the second openings may be the same or different. Since the current density will gradually increase along the extension direction of the second electrode extension portion, in some preferred embodiments, the design that the sizes of the second openings increase in sequence along the extension direction of the second electrode extension portion can prevent ESD explosion points from occurring in areas with high current density, such as near the end of the extension electrode, due to excessive charge concentration; at the same time, it can also alleviate the current congestion effect on the second electrode, improve the overall current uniformity of the light-emitting diode, and thus improve the reliability and luminous efficiency of the light-emitting diode chip.

[0029] In one embodiment, there are intervals between the second openings, and the sizes of the intervals are the same.

[0030] In one embodiment, there is a gap between the second openings, and the size of the gap decreases gradually along the extension direction away from the second electrode pad portion. In the present invention, the gaps between the second openings can be the same or different. By designing that the gaps between the second openings decrease gradually along the extension direction of the second electrode extension portion, ESD explosion points can be prevented from occurring in areas with high current density due to excessive charge concentration; at the same time, the current congestion effect on the second electrode can be alleviated, and the overall current uniformity of the light-emitting diode can be improved, thereby improving the reliability and luminous efficiency of the light-emitting diode chip.

[0031] In one embodiment, the second opening includes a plurality of first openings of the same size and at least one second opening, the second opening is arranged below the second end of the second electrode extension, corresponding to the insulating layer, and the size of the second opening is larger than the size of the first opening. Since the end of the extension electrode is often a high current density area, by arranging the second opening with the largest size below the second end of the second electrode extension, the current at the end of the extension electrode can be diffused as evenly as possible to the surroundings through the large-sized second opening, avoiding the occurrence of ESD explosion points at the end of the extension electrode due to excessive charge concentration, and at the same time improving the overall current uniformity of the light-emitting diode, thereby improving the reliability and luminous efficiency of the light-emitting diode chip.

[0032] In one embodiment, the width of the insulating layer is greater than or equal to the width of the second opening, thereby enhancing the current diffusion to the surroundings at the end of the extended electrode, thereby further improving the overall current uniformity of the light emitting diode.

[0033] In one embodiment, the ratio of the area of ​​the insulating layer to the area of ​​the second opening is in the range of 10% to 200%. The insulating layer at the end of the extended electrode and the second opening with a large size are designed to further improve the reliability and luminous efficiency of the light-emitting diode chip, and also to avoid the voltage increase caused by the current blocking layer being too large.

[0034] In one embodiment, the light-emitting diode also includes a first electrode, the first electrode includes a pad portion and an extension portion, the pad portion of the first electrode is located on the first semiconductor layer, the extension portion of the first electrode is located on the second semiconductor layer, and forms an ohmic contact with the first semiconductor layer through a series of through holes penetrating the second semiconductor layer and the light-emitting layer, and a protective layer is provided between the first electrode extension portion and the second semiconductor layer.

[0035] The present invention further provides a light emitting device, which uses the light emitting diode described in any of the above embodiments to effectively improve the performance of the light emitting device.

[0036] The technical solution of the present invention will be clearly and completely described below through a variety of specific implementations in conjunction with the accompanying drawings in the embodiments of the present invention. Example 1

[0037] See also Figure 1~Figure 4 , Figure 1 A schematic top view of a light emitting diode provided in Embodiment 1 of the present invention, Figure 2 For along Figure 1 Schematic diagram of the cross-sectional structure of the A-A' line, Figure 3 For Figure 2 A partial enlarged schematic diagram of the box area, Figure 4 For along Figure 1 Schematic diagram of the cross-sectional structure of the line BB'. In order to achieve at least one of the above advantages or other advantages, an embodiment of the present invention provides a light-emitting diode, which may at least include a substrate 10, a semiconductor stack 12, a first electrode 21, a second electrode 22, an insulating layer 14, a transparent conductive layer 16, and a protective layer 18. The first electrode 21 includes a pad portion 211 and an extension portion 212, the second electrode 22 includes a pad portion 221 and an extension portion 222, and the second electrode extension portion 222 includes a first end 2221 connected to the second electrode pad portion 221 and a second end 2222 away from the second electrode pad portion 221.

[0038] Specifically, the substrate 10 may be a transparent substrate, a non-transparent substrate, or a semi-transparent substrate. The substrate 10 may be selected from, but not limited to, sapphire, aluminum nitride, gallium nitride, silicon, silicon carbide, and glass. Its surface structure may be a planar structure or a patterned structure. In some embodiments, the substrate 10 may be a combined patterned substrate. In other embodiments, the substrate 10 may be thinned or removed to form a thin film chip.

[0039] The semiconductor stack 12 is disposed on the upper surface of the substrate 10, and the semiconductor stack 12 includes a first semiconductor layer 123, a light emitting layer 124, and a second semiconductor layer 125 stacked in sequence. The first semiconductor layer 123 is formed on the substrate 10, and as a layer grown on the substrate 10, it can be a gallium nitride semiconductor layer doped with n-type impurities, such as Si. In some embodiments, a buffer layer can be further disposed between the first semiconductor layer 123 and the substrate 10. In other embodiments, the first semiconductor layer 123 can also be connected to the substrate 10 through a bonding layer.

[0040] The light-emitting layer 124 is formed on the first semiconductor layer 123, and the light-emitting layer 124 may be a quantum well structure (QuantumWell, referred to as QW). In some embodiments, the light-emitting layer 124 may also be a multiple quantum well structure (Multiple QuantumWell, referred to as MQW), wherein the multiple quantum well structure includes multiple quantum well layers (Well) and multiple quantum barrier layers (Barrier) alternately arranged in a repeated manner. In addition, the composition and thickness of the well layer in the light-emitting layer 124 determine the wavelength of the generated light. In particular, by adjusting the composition of the well layer, a light-emitting layer that generates different colors of light such as ultraviolet light, blue light, green light, and yellow light can be provided.

[0041] The second semiconductor layer 125 is formed on the light emitting layer 124. The second semiconductor layer 125 may be a gallium nitride semiconductor layer doped with p-type impurities, such as Mg. Although the first semiconductor layer 123 and the second semiconductor layer 125 may be single-layer structures, the present invention is not limited thereto and may be multiple layers and may include a superlattice layer. In addition, in other embodiments, when the first semiconductor layer 123 is doped with p-type impurities, the second semiconductor layer 125 may be doped with n-type impurities, that is, the first semiconductor layer 123 is a P-type semiconductor layer and the second semiconductor layer 125 is an N-type semiconductor layer.

[0042] In an embodiment, the second semiconductor layer 125 includes a table for forming the first electrode 21 and a series of through holes 40 penetrating the second semiconductor layer 125 and the light emitting layer 124, thereby exposing a portion of the surface of the first semiconductor layer 123, and the number of the through holes 40 ranges from 1 to 15. The insulating layer 14 is formed on the second semiconductor layer 125 and is distributed below the position of the second electrode extension 222; the transparent conductive layer 16 is formed on the second semiconductor layer 125 and covers the insulating layer 14, and a third opening 33 is formed at a corresponding position of the pad portion 221 of the second electrode to expose a portion of the upper surface of the second semiconductor layer 125 located in the second electrode pad area, and a sixth opening 36 is formed at a corresponding position of the extension portion 212 of the first electrode, and the size of the sixth opening 36 is larger than the size of the through hole 40. Outside the through hole 40, a transparent conductive layer 16 and a protective layer 18 are sandwiched between the first electrode extension portion 212 and the second semiconductor layer 125; the protective layer 18 is formed on the transparent conductive layer 16, and at the same time covers the upper surface of the table and the side wall connecting the table and the upper surface of the second semiconductor layer 125, that is, basically covers the surface of the entire device, and at the pad portion 221 and the extension portion 222 of the second electrode A first opening 31 and a second opening 32 are formed at corresponding positions, exposing a portion of the upper surface of the second semiconductor layer 125 located in the second electrode pad area and a portion of the upper surface of the transparent conductive layer 16 located in the second electrode extension area, so that the second electrode pad portion 221 contacts the second semiconductor layer 125 through the first opening 31, and the second electrode extension portion 222 contacts the transparent conductive layer 16 through the second opening 32. The protective layer 18 forms a fourth opening 34 and a fifth opening 35 at corresponding positions of the pad portion 211 and the extension portion 212 of the first electrode, and the fifth opening 35 is formed in the through hole 40. The size of the fifth opening 35 is smaller than the size of the through hole 40. In the through hole 40, the protective layer 18 covers the side wall of the through hole 40; the first electrode 21 and the second electrode 22 are formed on the protective layer 18, wherein the first electrode pad portion 211 is formed on the table and contacts the first semiconductor layer 123 through the fourth opening 34, as shown in FIG. Figure 1 , Figure 4 As shown, the fourth opening 34 may be an annular opening, the first electrode extension portion 212 is formed on the protective layer 18 located above the second semiconductor layer 125, and contacts the first semiconductor layer 123 through the fifth opening 35 and the through hole 40, the second electrode pad portion 221 contacts the second semiconductor layer 125 through the first opening 31, and the second electrode extension portion 222 contacts the transparent conductive layer 16 through the second opening 32, as shown in FIG. Figures 1 to 3 As shown, the first opening 31 may be an annular opening.

[0043] The first electrode 21 and the second electrode 22 may be metal electrodes, that is, the first electrode 21 and the second electrode 22 are made of metal materials, for example, at least one of nickel, gold, chromium, titanium, platinum, palladium, rhodium, iridium, aluminum, tin, indium, tantalum, copper, cobalt, iron, ruthenium, zirconium, tungsten and molybdenum, or at least one of alloys or laminates selected from the above materials. As an example, in this embodiment, the first electrode 21 may be an N electrode, and the second electrode 22 may be a P electrode.

[0044] The transparent conductive layer 16 may include at least one of indium tin oxide (ITO), zinc-doped indium tin oxide (ZITO), zinc indium oxide (ZIO), gallium indium oxide (GIO), zinc tin oxide (ZTO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), and gallium-doped zinc oxide (GZO). As an example, in this embodiment, the transparent conductive layer 16 is preferably an ITO (indium tin oxide semiconductor transparent conductive film) layer formed by evaporation or sputtering process.

[0045] The material of the protective layer 18 may include a non-conductive material. The non-conductive material is preferably an inorganic material or a dielectric material. The inorganic material may include silica gel. The dielectric material includes an electrically insulating material such as aluminum oxide, silicon nitride, silicon oxide, titanium oxide, or magnesium fluoride. For example, the protective layer 18 may be silicon dioxide, silicon nitride, titanium oxide, tantalum oxide, niobium oxide, barium titanate, or a combination thereof, and the combination thereof may be, for example, a Bragg reflector (DBR) formed by repeatedly stacking two materials with different refractive indices. As an example, in this embodiment, the material of the protective layer 18 is SiO2. The protective layer 18 has different effects depending on the designed position. In the light-emitting diode structure described in this embodiment, the protective layer 18 protects the surface of the light-emitting diode on the one hand, and on the other hand, serves as a current blocking layer to suppress the current over-injection under the electrode and increase the current diffusion of the transparent conductive layer 16. Considering the requirements of both, its thickness d is preferably λ / 4n×(2k-1), where λ is the emission wavelength of the light-emitting layer 124, n is the refractive index of the protective layer 18, k is a natural number greater than 1, and the preferred value of k is 2-3, and the corresponding thickness is preferably 150nm-500nm. When the thickness of the protective layer 18 is too small, it is not conducive to playing the role of current blocking layer and protection. When the thickness is too large, the absorption of the material itself will increase the light loss.

[0046] Please see Figure 3 , Figure 3 for Figure 2The partially enlarged schematic diagram of the frame area shows a partially enlarged view of the second electrode 22, the transparent conductive layer 16 forms a third opening 33 at a position corresponding to the second electrode pad portion 221, the protective layer 18 forms a first opening 31 at a position corresponding to the second electrode pad portion 221, the protective layer 18 covers the inner side wall of the third opening 33, the diameter of the first opening 31 is preferably smaller than the diameter of the third opening 33, thereby further improving the brightness of the light-emitting diode, specifically, the first opening 31 is a ring structure, the inner circle diameter of the first opening 31 is defined as d1', the outer circle diameter is d1, the diameter of the second electrode pad portion 221 is d2, and the diameter of the third opening 33 is d3, and the relationship between the four is preferably: d2>d3>d1>d1', thereby the upper surface of the second electrode pad portion 221 is stepped. It should be noted that in some other embodiments, the diameter of the first opening 31 is preferably also larger than the diameter of the third opening 33. In this design, the adhesion between the electrode and the epitaxial layer can be effectively increased, and the risk of the electrode and the attachment interface falling off during wire bonding can be reduced. Similarly, in the present embodiment, the outer diameter and the inner diameter of the first opening 31 are preferably smaller than the diameter of the third opening 33, thereby further improving the brightness of the light-emitting diode. In some other embodiments, the outer diameter of the first opening 31 may be larger than the diameter of the third opening 33, and the inner diameter may be smaller than the diameter of the third opening 33, which can also effectively increase the adhesion between the electrode and the epitaxial layer and improve the electrode bonding capability.

[0047] More preferably, the first opening 31 of the protective layer 18 located below the second electrode pad portion 221 may have at least one antenna 310 extending in a direction away from the pad portion 221, and the number of antennae 310 ranges from 1 to 20. At the position of the antennae 310, the second electrode pad portion 221 is in contact with the second semiconductor layer 125 and the transparent conductive layer 16 at the same time. Through the antennae 310, the second electrode pad portion 221 can be in contact with the transparent conductive layer 16, which can increase the contact area between the second electrode pad portion 221 and the transparent conductive layer 16, which is beneficial to the diffusion of current, thereby further alleviating the current congestion effect on the second electrode and reducing the risk of metal precipitation and electrode burning.

[0048] In the present embodiment, the protective layer 18 of the light-emitting diode protects the light-emitting diode from being damaged on the one hand, and can directly serve as a current blocking layer on the other hand, for suppressing the current over-injection under the electrode and increasing the current diffusion of the transparent conductive layer 16; the second electrode 22 directly contacts the semiconductor layer in the pad area, effectively increasing the adhesion between the electrode and the epitaxial layer, and reducing the risk of the electrode and the attachment interface falling off during wire bonding; the second electrode pad portion 221 adopts a design of multiple steps to effectively buffer the impact force of the wire bonding and reduce the impact and damage to the pad portion during the wire bonding process; the second electrode extension portion 222 is located on the protective layer 18, and contacts the transparent conductive layer 16 through the opening in the protective layer 18, so that the electrode extension portion forms a step shape with upper and lower rises, increases the angle of light emission at the electrode extension portion, and improves the light extraction efficiency. At the same time, since the electrode extension portion has a high step and a low step undulation distribution, the contact area between the electrode and other objects can be reduced, effectively reducing the damage to the electrode extension portion during the later film inversion, transportation and transfer, and reducing the dirt on the electrode extension portion.

[0049] In the present invention, the insulating layer 14 is distributed below the location of the second electrode extension 222, and the insulating layer 14 is only formed below the second end 2222 of the second electrode extension, wherein the second end 2222 of the second electrode extension is located at an end away from the second electrode pad portion 221, and the insulating layer 14 is sandwiched between the semiconductor stack 12 and the transparent conductive layer 16. In a more preferred embodiment, the insulating layer 14 is only provided below the end 2220 of the second electrode extension. The protective layer 18 forms a series of second openings 32 below the second electrode extension 222, and has a second opening 32 corresponding to the insulating layer 14, that is, the protective layer 18 has at least one second opening 32 formed below the second end 2222 of the second electrode extension. Specifically, the transparent conductive layer 16, the insulating layer 14, and the second semiconductor layer 125 are sequentially provided below the second end 2222 of the second electrode extension, and part of the protective layer 18, the transparent conductive layer 16, and the second semiconductor layer 125 are sequentially provided below other areas of the second electrode extension 222. The upper surface of the second electrode extension portion 222 thus formed is in a step shape. The light-emitting diode described in this embodiment forms an insulating layer 14 as a current blocking layer only below the second end 2222 of the second electrode extension portion away from the second electrode pad portion 221. Firstly, it can avoid the occurrence of ESD explosion points due to excessive charge concentration at the end of the extended electrode, thereby improving the chip's anti-static impact capability and ensuring the reliability of the light-emitting diode; secondly, it can avoid direct injection of current at the end of the extended electrode, so that the current at the end of the extended electrode is diffused as evenly as possible to the surroundings, promoting the lateral expansion of the current, improving the overall current uniformity of the light-emitting diode, and thus improving the luminous efficiency of the light-emitting diode chip; please refer to the details. Figure 6 , Figure 6A schematic diagram of the current flow path of the light emitting diode provided by the present invention, wherein Figure 6 (a) is the four processes of known mesa etching (MESA), transparent conductive layer (such as ITO), protective layer and electrode mentioned in the background technology. It can be seen that at the second end 2222 of the second electrode extension part / the end 2220 of the second electrode extension part, an ESD explosion point is easily generated due to excessive concentration of charges; Figure 6 (b) is a schematic diagram of the current flow path of the light-emitting diode provided by the present invention. By forming an insulating layer 14 below the second end 2222 of the second electrode extension part / the end 2220 of the second electrode extension part away from the second electrode pad part 221, the current can be diffused to the surroundings at the end of the extended electrode to avoid the ESD explosion point phenomenon. In addition, by eliminating the unnecessary current blocking layer below the extended electrode, compared with the design in which the insulating layer in the existing five-step process mentioned in the background technology is set corresponding to the extended electrode and expanded outward, the present invention can effectively reduce the area of ​​the current blocking layer and avoid the voltage increase of the chip. In addition, forming a protective layer 18 on the transparent conductive layer 16 first and then forming the second electrode 22 can reduce the probability of active metal in the electrode structure being oxidized during the production process of the protective layer 18; further, the four-layer structure of the insulating layer 14, the transparent conductive layer 16, the protective layer 18, and the second electrode extension part 222 can form a full-angle reflector, thereby improving the reflection ability of the electrode extension area and reducing the light absorption efficiency. Among them, the insulating layer 14 is an insulating material, which can be an oxide, and can be a relatively transparent material, such as one or more combinations of silicon oxide, titanium oxide, silicon nitride, aluminum oxide, magnesium fluoride, spin-on glass (SOG), polymer (Polymer) and other materials. The present application is not limited to the examples listed here. The materials of the insulating layer 14 and the protective layer 18 are preferably both low-refractive index insulating materials, preferably with a refractive index of less than 1.5, and the materials can be the same or different. As an example, in this embodiment, the material of the insulating layer 14 is SiO2. Preferably, the thickness of the insulating layer 14 is between 50 and 500 nm.

[0050] Please continue to see Figure 1, the insulating layer 14 and the second electrode extension 222 have an overlapping portion, the length of the overlapping portion accounts for 1% to 50% of the length of the second electrode extension 222, or the area of ​​the overlapping portion accounts for 1% to 50% of the area of ​​the second electrode extension 222. Preferably, the proportion is 5% to 30%, more preferably, the proportion is 10% to 25%, and optionally, the length proportion of the overlapping portion or the area proportion of the overlapping portion can be, for example, 12%, 15%, 18%, 20%, etc. By further limiting the length or area proportion of the overlapping portion between the insulating layer 14 and the second electrode extension 222, the area size of the current blocking layer under the extended electrode can be controlled, thereby avoiding the voltage increase caused by setting a current blocking layer with too much area. It should be noted that, since the second electrode extension portion 222 does not include a simple straight portion, for example, in the present embodiment, the second electrode extension portion 222 includes a first curved portion 222-1, a straight portion 222-2, and a second curved portion 222-3, one end of the first curved portion 222-1 is connected to the second electrode pad portion 221 and the other end is connected to the straight portion 222-2, one end of the straight portion 222-2 is connected to the first curved portion 222-1 and the other end is connected to the second curved portion 222-3, one end of the second curved portion 222-3 is connected to the straight portion 222-2 and the other end is gradually bent in a direction away from the first electrode 21. More specifically, the first curved portion 222-1 includes an extension portion 222-1-0, one end of the extension portion 222-1-0 is connected to the electrode pad portion and the other end is connected to the straight portion 222-2, and the second curved portion 222-3 includes a circular end portion 222-3-0. The length and area of ​​the second electrode extension portion 222 mentioned above include the length and area of ​​the entire section from the extension portion 222-1-0 to the circular end portion 222-3-0.

[0051] Please continue to see Figure 1 , Figure 2In the present invention, the protective layer 18 has a plurality of second openings 32, and the second openings 32 are arranged in sequence along the extension direction gradually away from the second electrode pad portion 221. The extension direction of the second electrode pad portion 221 is also the direction from the first end 2221 of the second electrode extension portion to the second end 2222 of the second electrode extension portion. There are intervals between the second openings 32, and the second openings 32 and the intervals are alternately arranged along the extension direction of the second electrode pad portion 221. The number of second openings 32 and the intervals varies from 1 to 25. In some embodiments, the sizes of the plurality of second openings 32 are the same, and the sizes of the intervals between the second openings 32 are also the same. In some modified embodiments, the sizes of the plurality of second openings 32 increase in sequence along the extension direction gradually away from the second electrode pad portion 221, and this technical solution will be described in detail in Example 3. In some modified embodiments, the sizes of the intervals decrease in sequence along the extension direction gradually away from the second electrode pad portion 221, and this technical solution will be described in detail in Example 4. Of course, the second openings 32 of the same size can also match the intervals of varying sizes, and the intervals of the same size can also match the second openings 32 of varying sizes. They can be selected and used accordingly according to specific actual needs, and the present application is not limited thereto. In the present embodiment, the second opening 32 includes a plurality of first openings 321 of the same size and at least one second opening 322. The second opening 322 is arranged below the second end 2222 of the second electrode extension, corresponding to the insulating layer 14, and the size of the second opening 322 is larger than the size of the first opening 321. This is because the end of the extended electrode is often a high current density area. By arranging the second opening 322 of the largest size below the second end 2222 of the second electrode extension, the current can be diffused as evenly as possible to the surroundings through the large-sized second opening 322 at the end of the extended electrode, avoiding the occurrence of ESD explosion points due to excessive charge concentration at the end of the extended electrode, while improving the overall current uniformity of the light-emitting diode, thereby improving the reliability and luminous efficiency of the light-emitting diode chip. In the present invention, the size of the second opening portion 322 is at least twice the size of the first opening portion 321; preferably, the size of the second opening portion 332 is 2 to 20 times the size of the first opening portion 321; more preferably, the size of the second opening portion 332 is 2 to 15 times the size of the first opening portion 321; further, the size of the second opening portion 332 is 4 to 12 times the size of the first opening portion 321; optionally, the size of the second opening portion 322 is at least the size of the first opening portion 321, for example, it can be 5 times, 8 times, 10 times, 12 times, 14 times, etc.By limiting the ratio of the size of the second opening 322 to the size of the first opening 321, the current can be more effectively diffused to the surroundings through the large-sized second opening 322, avoiding the ESD explosion point caused by the charge concentration phenomenon, and at the same time improving the overall current uniformity of the light-emitting diode, thereby improving the reliability and luminous efficiency of the light-emitting diode chip. It should be noted that in the present invention, there can be more than one second opening 322, for example, there are more than two second openings 322, and the size of any second opening 322 is larger than the size of any first opening 321, which can be selected and used according to specific actual needs, and the present application is not limited thereto. For example, when the size of the second opening 322 is less than 10 times the size of the first opening 321, it is preferred that there is one second opening 322; when the size of the second opening 322 is more than 10 times the size of the first opening 321, it is preferred that there are more than two second openings 322.

[0052] In the present invention, the width of the insulating layer 14 is preferably greater than or equal to the width of the second opening portion 322, so as to enhance the diffusion of current to the surroundings at the end of the extended electrode, and further improve the overall current uniformity of the light-emitting diode. It should be noted that in other embodiments, the area of ​​the insulating layer 14 may also be smaller than the area of ​​the second opening portion 322, and can be selected and used accordingly according to specific actual needs, and the present application is not limited to this. The ratio of the area of ​​the insulating layer 14 to the area of ​​the second opening portion 322 ranges from 10% to 200%. Preferably, the ratio is 40% to 150%, and more preferably, the ratio is 50% to 120%, for example, it can be 50%, 70%, 90%, 110%, etc. Please continue to refer to Figure 1 In this embodiment, the width of the insulating layer 14 is greater than the width of the second opening 322, and the area of ​​the insulating layer 14 is greater than the area of ​​the second opening 322. In some modified embodiments, please refer to Figure 7 , Figure 8 , Figure 7 A schematic top view of another light emitting diode provided in the first embodiment of the present invention, Figure 8 For along Figure 7 , in this embodiment, the width of the insulating layer 14 is greater than the width of the second opening 322, and the area of ​​the insulating layer 14 is smaller than the area of ​​the second opening 322. In some modified embodiments, please refer to Fig. 9 , Fig.10 , Fig. 9 A schematic top view of another light emitting diode provided in the first embodiment of the present invention is shown. Fig.10 For along Fig. 9, in this embodiment, the width of the insulating layer 14 is equal to the width of the second opening 322, and the area of ​​the insulating layer 14 is equal to the area of ​​the second opening 322. In some modified embodiments, please refer to Fig.11 , Fig.12 , Fig.11 A schematic top view of another light emitting diode provided in the first embodiment of the present invention, Fig.12 For along Fig.11 , in this embodiment, the width of the insulating layer 14 is equal to the width of the second opening 322, and the area of ​​the insulating layer 14 is smaller than the area of ​​the second opening 322. The insulating layer 14 at the end of the extended electrode is matched with the large-sized second opening 322 to further improve the reliability and luminous efficiency of the light-emitting diode chip, and also avoid the voltage increase caused by the current blocking layer being too large.

[0053] Furthermore, the second opening 322 and the second electrode extension 222 have an overlapping portion, and the length of the overlapping portion accounts for 5% to 25% of the length of the second electrode extension 222, or the area of ​​the overlapping portion accounts for 5% to 25% of the area of ​​the second electrode extension 222. Preferably, the proportion is 10% to 20%, and optionally, the length proportion of the overlapping portion or the area proportion of the overlapping portion can be, for example, 12%, 14%, 16%, 18%, etc. The length or area proportion of the overlapping portion between the second opening 322 and the second electrode extension 222 further promotes the current to be more effectively diffused to the surroundings through the large-sized second opening 322, thereby improving the overall current uniformity on the second electrode and further improving the luminous efficiency of the light-emitting diode chip.

[0054] The method for manufacturing a light emitting diode of the present invention mainly includes five processes: mesa etching (MESA), manufacturing an insulating layer 14, manufacturing a transparent conductive layer 16, manufacturing a protective layer 18, and manufacturing an electrode. Figure 5 The five processes and the corresponding mask patterns are shown and are briefly described below.

[0055] First, a semiconductor stack 12 is provided, which generally includes a substrate 10 , a first semiconductor layer 123 , a light emitting layer 124 , and a second semiconductor layer 125 .

[0056] Next, refer to Figure 5 The pattern shown in (a) defines a first electrode region and a second electrode region on the surface of the semiconductor stack 12, removes the empty area, and forms a terrace of the first electrode 21 and a series of through holes 40; Next, refer to Figure 5The insulating layer 14 is formed on the second semiconductor layer 125 of the semiconductor stack 12, and is formed only below the second end 2222 of the second electrode extension portion, wherein the second end 2222 of the second electrode extension portion is located at an end away from the second electrode pad portion 221; Next, refer to Figure 5 The pattern shown in (c) is as follows: a transparent conductive layer 16 is formed on the second semiconductor layer 125 of the semiconductor stack 12, the mesa region is etched away, and an opening 33 is formed in the pad region of the second electrode region, and an opening 36 is formed at a position corresponding to the through hole 40; Next, refer to Figure 5 The pattern shown in (d) is shown in FIG. 1 , a protective layer 18 is formed on the transparent conductive layer 16, and the protective layer 18 covers the side wall of the through hole 40, the side wall between the transparent conductive layer 16 and the table, and the table surface. An opening 31 is formed in the pad area of ​​the second electrode area, an opening 32 is formed in the extension area of ​​the second electrode area, an opening 34 is formed on the table, and an opening 35 is formed in the extension part 212 of the first electrode. The opening 35 is formed in the through hole 40, and the size of the opening 35 is smaller than the size of the through hole 40. Preferably, the opening 31 is an annular structure, and the inner circle diameter d1' and the outer circle diameter d1 of the annular structure are both smaller than the diameter d3 of the opening 33. Preferably, the opening 32 includes a plurality of first openings 321 of the same size and at least one second opening 322, and the second opening 322 is arranged below the second end 2222 of the second electrode extension, and is arranged corresponding to the insulating layer 14, and the size of the second opening 322 is larger than the size of the first opening 321.

[0057] Next, refer to Figure 5 The pattern shown in (e) is used to make the first electrode 21 and the second electrode 22 on the protective layer 18. The second electrode pad portion 221 contacts the second semiconductor layer 125 through the first opening 31, the second electrode pad portion 221 contacts the second semiconductor layer 125 and the protective layer 18, and the second electrode extension portion 222 contacts the transparent conductive layer 16 through the second opening 32; the pad portion 211 of the first electrode is located on the first semiconductor layer 123, the first electrode pad portion 211 contacts the first semiconductor layer 123 through the fourth opening 34, the first electrode pad portion 221 contacts the first semiconductor layer 123 and the protective layer 18, the extension portion 212 of the first electrode is located on the second semiconductor layer 125, and the first electrode extension portion 212 contacts the first semiconductor layer 123 through the fifth opening 35 and the through hole 40.

[0058] It should be noted that the shape and size of the openings 31 and 34 are not limited to the above description, and they can also directly form a non-annular structure. For example, in some implementations, there is no protective layer 18 below the center of the pad portion of the electrode, and it directly contacts the semiconductor stack 12. In other embodiments, the openings 31 and 34 can also be designed as a series of antenna structures distributed around the pad area, exposing the transparent conductive layer 16, and the pad area does not form an opening structure. In this case, the pad portion of the electrode is completely formed on the protective layer 18 and can be connected to the antenna structure through a metal lead. Example 2

[0059] See also Fig.13 , Fig.14 , Fig.13 A schematic top view of a light emitting diode provided in the second embodiment of the present invention, Fig.14 For along Fig.13 Schematic diagram of the cross-sectional structure of the A-A' line. Compared with the light-emitting diode of the first embodiment of the present invention, the light-emitting diode of the second embodiment is mainly different in that: in this embodiment, the insulating layer 14 is distributed in blocks and is composed of a series of discrete block structures, and there are gaps between the block structures. By setting the insulating layer 14 to be composed of a series of block structures, the current can not only diffuse to the surroundings at the end of the extended electrode, but also diffuse through the gaps between the blocks, so that the current diffuses more evenly at the end of the extended electrode, further improving the overall current uniformity of the light-emitting diode. The areas of several block structures can be equal. In some preferred embodiments, the areas of several block structures can also be unequal (not shown in the figure). Specifically, when the insulating layer 14 is composed of a series of block structures of unequal areas, the area of ​​the block structure is the largest at the position close to the second end 2222 of the second electrode extension part, and the area becomes smaller and smaller as it moves away from the second end 2222 of the second electrode extension part, wherein the area of ​​the block structure farthest from the second end 2222 of the second electrode extension part is the smallest. This can prevent ESD explosion points from occurring in areas with high current density, such as near the end of the extended electrode, due to excessive charge concentration; it can also alleviate the current congestion effect on the second electrode, improve the overall current uniformity of the light-emitting diode, and thus improve the reliability and luminous efficiency of the light-emitting diode chip. Example 3

[0060] See also Fig.15 , Fig.16 , Fig.15 A schematic top view of a light emitting diode provided in Embodiment 3 of the present invention is shown in FIG. Fig.16 For along Fig.15Schematic diagram of the cross-sectional structure of the A-A' line. Compared with the light-emitting diode of the first embodiment of the present invention, the light-emitting diode of the third embodiment is mainly different in that: in this embodiment, the size of the second openings 32 of the protective layer 18 increases successively along the extension direction gradually away from the second electrode pad portion 221. Specifically, at a position close to the second electrode pad portion 221, the size of the second opening 32 is the smallest, and as it moves away from the second electrode pad portion 221, the size of the opening 32 becomes larger and larger, wherein the second opening 32 farthest from the second electrode pad portion 221, that is, located at the second end 2222 of the second electrode extension portion, has the largest size. Since the current density tends to gradually increase along the extension direction gradually away from the second electrode pad portion 221, in some preferred embodiments, the design of the second opening 32 increasing in size along the extension direction of the electrode extension portion can prevent the occurrence of ESD explosion points in areas with high current density, such as near the end of the extension electrode, due to excessive charge concentration; at the same time, it can also alleviate the current congestion effect on the second electrode, improve the overall current uniformity of the light-emitting diode, and thus improve the reliability and luminous efficiency of the light-emitting diode chip. Example 4

[0061] See also Fig.17 , Fig.18 , Fig.17 A schematic top view of a light emitting diode provided in the fourth embodiment of the present invention, Fig.18 For along Fig.17 Schematic diagram of the cross-sectional structure of the A-A' line. Compared with the light-emitting diode of the first embodiment of the present invention, the light-emitting diode of the fourth embodiment is mainly different in that: the protective layer 18 has a plurality of second openings 32, and there are intervals between the second openings 32, and the size of the intervals decreases gradually along the extension direction gradually away from the second electrode pad portion 221. Specifically, at a position close to the second electrode pad portion 221, the interval size of the second openings 32 is the largest, and as it moves away from the second electrode pad portion 221, the size of the intervals becomes smaller and smaller, wherein the second openings 32 farthest from the second electrode pad portion 221, that is, located at the second end 2222 of the second electrode extension portion, have the smallest interval size. By designing that the intervals between the second openings 32 decrease successively along the extension direction of the second electrode extension portion 222, it is also possible to prevent ESD explosion points from occurring in areas with high current density due to excessive charge concentration; at the same time, it is also possible to improve the overall current uniformity of the light-emitting diode, thereby improving the reliability and luminous efficiency of the light-emitting diode chip. Example 5

[0062] See also Fig.19 , Fig. 20 , Fig.19 A schematic top view of a light emitting diode provided in Embodiment 5 of the present invention is shown in FIG. Fig. 20This is a top view of another light emitting diode provided in the fifth embodiment of the present invention. Compared with the light emitting diode in the first embodiment of the present invention, the light emitting diode in the fifth embodiment is mainly different in that the insulating layer 14 and the second electrode extension portion 222 directly above it have a width difference △W, and the width difference △W gradually increases from the first end 2221 of the second electrode extension portion to the second end 2222 of the second electrode extension portion. In some embodiments, please refer to Fig.18 The second electrode extension portion 222 gradually tapers along the direction from the first end 2221 to the second end 2222, or in other words, the second electrode extension portion 222 gradually tapers along the direction away from the second electrode pad portion 221, and has widths W1 and W3 above the insulating layer 14, wherein the width W3 is closer to the second end 2222 of the second electrode extension portion than the width W1, W1>W3; the width of the insulating layer 14 is unchanged or gradually increases (not shown in the figure) along the direction from the first end 2221 to the second end 2222, and has a width W2 below the width W1 and a width W4 below the width W3, wherein the width W4 is closer to the second end 2222 of the second electrode extension portion than the width W2, W2≤W4, the first width difference between the width W2 and the width W1 is △W1, the second width difference between the width W4 and the width W3 is △W2, △W1<△W2. In some modified embodiments, please refer to Fig.19 , the width of the insulating layer 14 gradually increases along the direction from the first end 2221 to the second end 2222, or in other words, the width of the insulating layer 14 gradually decreases along the direction away from the second electrode pad portion 221, and has widths W2 and W4 below the second electrode extension portion 222, wherein the width W4 is closer to the second end 2222 of the second electrode extension portion than the width W2, and W2<W4; the second electrode extension portion 222 remains unchanged or gradually becomes thinner (not shown in the figure) along the direction from the first end 2221 to the second end 2222, and has a width W1 located above the width W2 and a width W3 located above the width W4, wherein the width W3 is closer to the second end 2222 of the second electrode extension portion than the width W1, W1≥W3, the first width difference between the width W2 and the width W1 is △W1, the second width difference between the width W4 and the width W3 is △W2, and △W1<△W2. Through the width difference gradient design, the phenomenon of excessive charge concentration under electrostatic impact at the second end 2222 of the second electrode extension portion away from the second electrode pad portion 221 can be further improved, and current crowding near the second end 2222 due to the offset of the insulating layer position can be avoided, thereby further improving the chip's anti-static impact performance and improving the overall reliability of the electrode structure.

[0063] The present invention further provides a light emitting device, which uses the light emitting diode described in any of the above embodiments to effectively improve the performance of the light emitting device.

[0064] In summary, the light emitting diode provided by the present invention achieves the goal of improving chip reliability and light emitting efficiency while avoiding voltage increase by arranging the insulating layer only at one end away from the second electrode pad portion.

[0065] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light emitting diode, characterized in that: The light emitting diode comprises: The semiconductor stack comprises, from bottom to top, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked in sequence; an insulating layer formed on the second semiconductor layer; a transparent conductive layer, formed on the second semiconductor layer and covering the insulating layer; A protective layer, formed on the transparent conductive layer and having an opening exposing a portion of the upper surface of the transparent conductive layer; A second electrode is formed on the protective layer, includes a pad portion and an extension portion, and is electrically connected to the transparent conductive layer through the opening of the protective layer; The invention is characterized in that the second electrode extension portion has a first end connected to the second electrode pad portion and a second end away from the second electrode pad portion, and the insulating layer is only formed under the second end of the second electrode extension portion.

2. The light emitting diode according to claim 1, characterized in that: The insulating layer and the second electrode extension portion have an overlapping portion, and a length of the overlapping portion accounts for 1% to 50% of a length of the second electrode extension portion.

3. The light emitting diode according to claim 1, characterized in that: The insulating layer and the second electrode extension portion have an overlapping portion, and an area of ​​the overlapping portion accounts for 1% to 50% of an area of ​​the second electrode extension portion.

4. The light emitting diode according to claim 1, characterized in that: The insulating layer and the second electrode extension portion directly above the insulating layer have a width difference, and the width difference gradually increases in a direction from a first end of the second electrode extension portion to a second end of the second electrode extension portion.

5. The light emitting diode according to claim 1, characterized in that: The insulating layer is composed of a series of block structures.

6. The light emitting diode according to claim 1, characterized in that: The protective layer forms a first opening and a second opening in the pad portion and the extension portion of the second electrode, respectively, to expose a portion of the upper surface of the second semiconductor layer located at the second electrode pad portion and a portion of the upper surface of the transparent conductive layer located at the second electrode extension portion.

7. The light emitting diode according to claim 1, characterized in that: The transparent conductive layer forms a third opening at the pad portion of the second electrode to expose a portion of the upper surface of the second semiconductor layer located at the second electrode pad portion, and a size of the third opening is smaller than a size of the second electrode pad portion.

8. The light emitting diode according to claim 7, characterized in that: The size of the first opening is smaller than that of the third opening, the pad portion of the second electrode contacts the second semiconductor layer, and the extension portion of the second electrode contacts the transparent conductive layer.

9. The light emitting diode according to claim 7, characterized in that: The first opening is an annular structure, and the inner circle diameter and the outer circle diameter of the annular structure are both smaller than the diameter of the third opening.

10. The light emitting diode according to claim 6, characterized in that: The protective layer also includes at least one antenna extending from the first opening to the periphery of the second electrode pad portion, exposing a portion of the upper surface of the transparent conductive layer. At the position of the antenna, the pad portion of the second electrode is in contact with the second semiconductor layer and the transparent conductive layer at the same time.

11. The light emitting diode according to claim 6, characterized in that: The protection layer has a plurality of second openings, and the second openings are sequentially arranged at intervals along an extending direction gradually away from the second electrode pad portion.

12. The light emitting diode according to claim 11, characterized in that: The sizes of the plurality of second openings are all the same.

13. The light emitting diode according to claim 11, characterized in that: The sizes of the plurality of second openings increase sequentially along an extending direction gradually away from the second electrode pad portion.

14. The light emitting diode according to claim 11, characterized in that: There are intervals between the second openings, and the intervals have the same size.

15. The light emitting diode according to claim 11, characterized in that: There are intervals between the second openings, and sizes of the intervals decrease in sequence along an extending direction gradually away from the second electrode pad portion.

16. The light emitting diode according to claim 11, characterized in that: The second opening includes a plurality of first openings of the same size and at least one second opening. The second opening is arranged below the second end of the second electrode extension and corresponds to the insulating layer. The size of the second opening is larger than that of the first opening.

17. The light emitting diode according to claim 16, characterized in that: The width of the insulating layer is greater than or equal to the width of the second opening.

18. The light emitting diode according to claim 16, characterized in that: The ratio of the area of ​​the insulating layer to the area of ​​the second opening is in a range of 10% to 200%.

19. The light emitting diode according to claim 1, characterized in that: The light-emitting diode also includes a first electrode, which includes a pad portion and an extension portion. The pad portion of the first electrode is located on the first semiconductor layer, and the extension portion of the first electrode is located on the second semiconductor layer. The extension portion of the first electrode forms an ohmic contact with the first semiconductor layer through a series of through holes that penetrate the second semiconductor layer and the light-emitting layer. The protective layer is provided between the extension portion of the first electrode and the second semiconductor layer.

20. A light emitting device, characterized in that: A light emitting diode as claimed in any one of claims 1 to 19 is used.

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