Display device

Abstract

A display device is provided. The display device includes: a substrate; a circuit layer on the substrate; the display layer is located on the circuit layer; at least one hole in the display area of the substrate, the at least one hole penetrating the substrate, the circuit layer, and the display layer; and at least two grooves surrounding the at least one hole, where each of the at least two grooves has an undercut structure. The substrate includes a first substrate, a first inorganic layer, a second substrate, and a second inorganic layer sequentially stacked, and each of the at least two grooves extends downward into the second substrate from the display layer.

Description

[0001] This application is a divisional application of a patent application with an application date of June 26, 2019, application number 201910558894.9, and title “Display Device”. Technical Field

[0002] One or more embodiments of the present disclosure relate to a display device. Background Art

[0003] Recently, on the front surface of a display device, the size of a display area for displaying an image has increased while physical buttons have been removed. A display device has been introduced in which a separate component such as a camera is located in the display area to increase the size of the display area.

[0004] In order to place a separate component such as a camera in the display area, a groove or a penetration portion where the separate component is located is formed in the display area. However, the groove or the penetration portion formed in the display area may serve as a moisture intrusion path through which external moisture intrudes into the display area. Summary of the invention

[0005] One or more embodiments include a display device that increases the size of a display area and effectively prevents external moisture from intruding through a penetration portion of the display area.

[0006] According to one or more embodiments, a display device includes: a substrate, a circuit layer located on the substrate; a display layer located on the circuit layer; at least one hole located in a display area of ​​the substrate, the at least one hole penetrating the substrate, the circuit layer and the display layer; and at least two grooves surrounding the at least one hole, each of the at least two grooves having an undercut structure, wherein the substrate includes a first substrate, a first inorganic layer, a second substrate and a second inorganic layer stacked sequentially, and each of the at least two grooves extends downward from the display layer into the second substrate.

[0007] The at least two grooves may include a first groove closest to the at least one hole and spaced apart from the at least one hole and a second groove surrounding the first groove and spaced apart from the first groove. The second inorganic layer may include a pair of first tips extending into the first groove, wherein the pair of first tips face each other to form an undercut structure. The second inorganic layer may also include a pair of second tips extending into the second groove, wherein the pair of second tips face each other to form an undercut structure.

[0008] The display device may further include a bridge connecting the pair of second tips to each other along portions of the second groove, wherein the bridge is integrally formed with the pair of second tips and the pair of first tips are spaced apart from each other along the entire first groove.

[0009] The display device may further include an encapsulation layer covering the display layer, wherein the encapsulation layer may include a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer stacked sequentially, and the first inorganic encapsulation layer may cover the bottom surface and inner wall surface of the first groove and the bottom surface and inner wall surface of the second groove.

[0010] The first inorganic encapsulation layer may cover a lower surface of the bridge.

[0011] The organic encapsulation layer may fill the second groove.

[0012] The second inorganic encapsulating layer and the first inorganic encapsulating layer may contact each other in the first groove.

[0013] The first inorganic encapsulation layer and the second inorganic encapsulation layer may extend to an inner sidewall of the at least one hole and may be in contact with a side surface of the substrate.

[0014] The circuit layer may include a thin film transistor, and the display layer may include an organic light emitting diode electrically connected to the thin film transistor.

[0015] According to one or more embodiments, a display device includes: a substrate including a first substrate, a first inorganic layer, a second substrate and a second inorganic layer stacked sequentially; a circuit layer located on the substrate, and a display layer located on the circuit layer; at least one hole located in a display area of ​​the substrate, the at least one hole penetrating the substrate, the circuit layer and the display layer; a first groove and a second groove located in the display area of ​​the substrate, the first groove and the second groove surrounding the at least one hole; and an encapsulation layer covering the display layer, wherein the second groove is separated from the first groove and surrounds the first groove, and the encapsulation layer may include an organic encapsulation layer filling the second groove.

[0016] Each of the first groove and the second groove may extend downward from the display layer into a portion of the second substrate.

[0017] The encapsulation layer may further include a first inorganic encapsulation layer and a second inorganic encapsulation layer disposed below and above the organic encapsulation layer, respectively, and the first inorganic encapsulation layer and the second inorganic encapsulation layer may contact each other in the first groove.

[0018] The second inorganic layer may include a pair of first tips extending toward each other into the first groove, and the second inorganic layer may further include a pair of second tips extending toward each other into the second groove.

[0019] A width of an upper portion of each of the first and second grooves may be smaller than a width of a lower portion of each of the first and second grooves.

[0020] The second inorganic layer may further include a bridge connecting the second tips to each other along a portion of the second groove, and the first tips are completely separated from each other along the entire first groove.

[0021] The second inorganic layer may further include a plurality of bridges connecting the second tip ends to each other, and the plurality of bridges may be spaced apart from each other at regular intervals along the second groove.

[0022] The circuit layer may include a thin film transistor, and the display layer may include an organic light emitting diode electrically connected to the thin film transistor.

[0023] According to one or more embodiments, a display device includes: a substrate, which includes a first substrate, a first inorganic layer, a second substrate and a second inorganic layer stacked sequentially; a circuit layer located on the substrate; a display layer located on the circuit layer; at least one hole located in a display area of ​​the substrate, the at least one hole penetrating the substrate, the circuit layer and the display layer; and a first groove and a second groove located in the display area of ​​the substrate, and the first groove and the second groove surround the at least one hole, wherein the second inorganic layer includes a pair of first tips extending toward each other into the first groove, and the second inorganic layer also includes a pair of second tips extending toward each other into the second groove.

[0024] Each of the first groove and the second groove may extend downward from the display layer into a portion of the second substrate, and the second groove may be spaced apart from the first groove and surround the first groove.

[0025] The display device may further include an encapsulation layer covering the display layer, wherein the encapsulation layer includes an organic encapsulation layer filling the second groove and a first inorganic encapsulation layer and a second inorganic encapsulation layer respectively disposed below and above the organic encapsulation layer. The first inorganic encapsulation layer and the second inorganic encapsulation layer may contact each other in the first groove. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a schematic plan view of an exemplary display device according to an embodiment.

[0027] Figure 2 is along Figure 1 A cross-sectional view taken along line II'.

[0028] Figure 3 is along Figure 1 A cross-sectional view taken along line II-II'.

[0029] Figure 4 yes Figure 1 An enlarged schematic plan view of portion A of FIG.

[0030] Figure 5 is along Figure 4A cross-sectional view taken along line III-III'.

[0031] Figure 6 is along Figure 4 A cross-sectional view taken along line VI-VI'.

[0032] Figure 7 It is shown that the formation Figure 4 A cross-sectional view of the groove method.

[0033] Figure 8 is along Figure 4 Another cross-sectional view taken along line III-III'. DETAILED DESCRIPTION

[0034] Since the disclosure allows various changes and many embodiments, the embodiments will be shown in the drawings and described in detail in the written description. However, this is not intended to limit the disclosure to a specific mode of practice, and it will be appreciated that all changes, equivalents and substitutes that do not depart from the spirit and technical scope of the embodiments of the disclosure are included in the disclosure.

[0035] In the following embodiments, it will be understood that when a layer, a region, or a component is referred to as being “formed on” another layer, region, or component, the layer, region, or component may be directly or indirectly formed on the other layer, region, or component.

[0036] The sizes of components in the drawings may be exaggerated for convenience of explanation.

[0037] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In the accompanying drawings, like reference numerals may represent like elements.

[0038] Figure 1 is a schematic plan view of an exemplary display device 10 according to an embodiment. Figure 2 is along Figure 1 A cross-sectional view taken along line II'.

[0039] The display device 10 according to the embodiment includes a substrate 100, a circuit layer CL disposed on the substrate 100, and a display layer 300 disposed on the circuit layer CL, the circuit layer CL including a circuit device such as a thin film transistor 210, and the display layer 300 including a display element 310 electrically connected to the thin film transistor 210. In the present embodiment, the circuit layer CL includes not only a circuit device such as a thin film transistor 210 or a capacitor, but also various insulating layers formed on the thin film transistor 210. In other words, the circuit layer CL extends from above the substrate 100 to the planarization layer 140. Likewise, the display layer 300 includes the display element 310 and the pixel defining layer 150.

[0040] The display device 10 according to the embodiment includes a display area AA where a plurality of pixels are located and a peripheral area PA located outside the display area AA. The substrate 100 includes the display area AA and the peripheral area PA. The peripheral area PA includes a pad area to which various electronic devices or a printed circuit substrate are electrically attached.

[0041] According to an embodiment, the thin film transistor 210 is located in the display area AA of the substrate 100 in addition to the display element 310 . Figure 2 An organic light emitting diode such as a display element 310 is shown to be located in the display area AA. The organic light emitting diode includes a first electrode 311 electrically connected to the thin film transistor 210.

[0042] Furthermore, according to an embodiment, at least one through portion (hereinafter, also referred to as a "hole") H is located in the display area AA. The through portion H is a region that penetrates the substrate 100, the circuit layer CL, and the display layer 300 in the vertical direction, and is a space for accommodating a separate component for functions of the display device 10 or adding new functions to the display device 10. For example, the through portion H includes a plurality of through portions formed in the display area AA, and a sensor, a light source, or a camera module is installed in each of the through portions H, respectively. Since the through portion H penetrates the substrate 100, the circuit layer CL, and the display layer 300, external moisture or oxygen may leak into the display device 10 through the through portion H. However, according to the present embodiment, a plurality of grooves are formed around the through portion H, thereby effectively preventing the intrusion of moisture, which will be described below with reference to FIG. Figure 4 In the following description, first refer to Figure 2 The circuit layer CL and the display layer 300 are described.

[0043] According to an embodiment, the substrate 100 includes various materials. When an image is displayed in a direction toward the substrate 100, as in a bottom emission type display device, the substrate 100 is formed of a transparent material. However, when an image is displayed in a direction opposite to the substrate 100, as in a top emission type display device, the substrate 100 does not need to be formed of a transparent material. In this case, the substrate 100 may be formed of a metal. When the substrate 100 is formed of a metal, the substrate 100 may include iron, chromium, manganese, nickel, titanium, molybdenum, stainless steel (SUS), Invar alloy, Inconel alloy, or Kovar alloy.

[0044] According to an embodiment, a buffer layer 110 is formed on a substrate 100. The buffer layer 110 provides a planarized surface on an upper portion of the substrate 100, and may prevent foreign matter or moisture from diffusing through the substrate 100. For example, the buffer layer 110 may include an inorganic material such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, titanium oxide, or titanium nitride, or an organic material such as polyimide, polyester, or acrylic, and may be formed as a plurality of stacked bodies of the disclosed materials.

[0045] According to an embodiment, a thin film transistor 210 and a display element 310 electrically connected to the thin film transistor 210 are disposed on a substrate 100 .

[0046] According to an embodiment, the thin film transistor 210 includes an active layer 211, a gate electrode 213, a source electrode 215a, and a drain electrode 215b. In the following description, a case where the thin film transistor 210 is a top gate type in which the active layer 211, the gate electrode 213, and the source electrode 215a and the drain electrode 215b are sequentially formed is described. However, the embodiments of the present disclosure are not limited thereto, and various other types of thin film transistors 210 such as a bottom gate type may be used.

[0047] According to an embodiment, the active layer 211 includes a semiconductor material such as amorphous silicon or polycrystalline silicon. However, the embodiments of the present disclosure are not limited thereto, and the active layer 211 may include various other materials. In an exemplary embodiment, the active layer 211 includes an organic semiconductor material. In another exemplary embodiment, the active layer 211 includes an oxide semiconductor material. For example, the active layer 211 includes an oxide of a material selected from Group 12, Group 13, and Group 14 metal elements such as zinc (Zn), indium (In), gallium (Ga), tin (Sn), cadmium (Cd), germanium (Ge), etc., or a combination thereof.

[0048] According to an embodiment, a gate insulating layer 121 is formed on the active layer 211. The gate insulating layer 121 may have a single layer or a multilayer formed of an inorganic material such as silicon oxide or silicon nitride. The gate insulating layer 121 insulates the active layer 211 from the gate electrode 213. The gate insulating layer 121 is formed not only in the display area AA but also extends into the peripheral area PA.

[0049] According to an embodiment, the gate electrode 213 is formed on the gate insulating layer 121. The gate electrode 213 is connected to a gate line that transmits an on / off signal to the thin film transistor 210.

[0050] According to an embodiment, the gate electrode 213 is formed of a low resistance metal. For example, the gate electrode 213 is formed of at least one of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu) as a single layer or multiple layers.

[0051] According to an embodiment, an interlayer insulating layer 131 is formed on the gate electrode 213. The interlayer insulating layer 131 insulates the source electrode 215a and the drain electrode 215b from the gate electrode 213. The interlayer insulating layer 131 is formed not only in the display area AA but also extends into the peripheral area PA.

[0052] According to an embodiment, the interlayer insulating layer 131 may include a single layer or multiple layers formed of an inorganic material. For example, the inorganic material may be a metal oxide or a metal nitride. In detail, the inorganic material may include silicon oxide (SiO 2 )、Silicon Nitride(SiN x )、Silicon Oxynitride (SiON), Aluminum Oxide (Al 2 O 3 ), titanium oxide (TiO 2 )、Tantalum oxide(Ta 2 O 5 )、HfO 2 ) or zirconium oxide (ZrO 2 ).

[0053] According to an embodiment, the source electrode 215a and the drain electrode 215b are formed on the interlayer insulating layer 131. The source electrode 215a and the drain electrode 215b contact a region of the active layer 211. The source electrode 215a and the drain electrode 215b are formed of one or more of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu) as a single layer or multiple layers. For example, the source electrode 215a and the drain electrode 215b have a stacked structure of three layers of titanium (Ti), aluminum (Al), and titanium (Ti).

[0054] According to an embodiment, a planarization layer 140 is formed on the source electrode 215a and the drain electrode 215b. The planarization layer 140 removes the steps formed by the thin film transistor 210 and prevents defects in the display element 310 due to the uneven surface. The planarization layer 140 may have a single layer formed of an organic material or include a multilayer formed of an organic material. The organic material may be a general polymer such as polymethyl methacrylate (PMMA) or polystyrene (PS), a polymer derivative having a phenol group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluoropolymer, a p-xylene polymer, a vinyl alcohol polymer, or a mixture thereof. In addition, the planarization layer 140 may be formed by a composite stack of an inorganic insulating layer and an organic insulating layer.

[0055] According to an embodiment, the display element 310 is formed on the planarization layer 140. The display element 310 may be, for example, an organic light emitting diode including a first electrode 311, a second electrode 315 facing the first electrode 311, and an intermediate layer 313 therebetween.

[0056] According to an embodiment, the first electrode 311 is formed on the planarization layer 140 and is electrically connected to the thin film transistor 210. The first electrode 311 may have various forms such as an island form patterned by a photolithography method.

[0057] According to an embodiment, the first electrode 311 is a reflective electrode. For example, the first electrode 311 includes a reflective film and a transparent or semi-transparent electrode layer formed on the reflective film, the reflective film being formed of one of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, and Cr or a mixture thereof. The transparent or semi-transparent electrode layer includes at least one of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), gallium zinc oxide (GZO), and indium gallium zinc oxide (IGZO).

[0058] For example, according to an embodiment, the first electrode 311 has a stacked structure of a first transparent or semi-transparent electrode layer, a second conductive layer including silver, and a third transparent or semi-transparent electrode layer. In addition, the second conductive layer including silver may further include an alloy element having an atomic radius less than or equal to that of silver to prevent silver from agglomerating. The alloy element includes at least one of zinc (Zn), nickel (Ni), cobalt (Co), copper (Cu), gallium (Ga), germanium (Ge), platinum (Pt), antimony (Sb), manganese (Mn), tungsten (W), and molybdenum (Mo).

[0059] According to an embodiment, the second electrode 315 is a transparent or semi-transparent electrode and is formed as a metal thin film having a small work function and including Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg or a mixture thereof. In addition, a transparent electrode material such as ITO, IZO, ZnO or In can be used on the metal thin film. 2 O 3 ) further forms an auxiliary electrode layer or a bus electrode. Therefore, the second electrode 315 transmits light emitted from the organic emission layer included in the intermediate layer 313. In other words, the light emitted from the organic emission layer is directly emitted toward the second electrode 315 or is reflected by the reflective first electrode 311.

[0060] However, the display device 10 according to the present embodiment is not limited to the top emission type, but may be a bottom emission type in which light emitted from the organic emission layer is emitted toward the substrate 100. In this case, the first electrode 311 includes a transparent or semi-transparent electrode, and the second electrode 315 includes a reflective electrode. In addition, the display device 10 according to the present embodiment may be a dual emission type in which light is emitted in two directions from the front surface and the rear surface.

[0061] According to an embodiment, the pixel defining layer 150 is an insulator on the first electrode 311. The pixel defining layer 150 is formed by a method such as spin coating, and the pixel defining layer 150 uses at least one organic insulating material selected from polyimide, polyamide, acrylic resin, benzocyclobutene, and phenol resin. The pixel defining layer 150 exposes the region of the first electrode 311, and the intermediate layer 313 including the organic emission layer is disposed in the exposed region. In other words, the pixel defining layer 150 defines the pixel region of the organic light emitting diode.

[0062] According to an embodiment, the organic emission layer included in the intermediate layer 313 includes a low-molecular organic material or a polymer organic material, and the intermediate layer 313 further and selectively includes functional layers such as a hole transport layer (HTL), a hole injection layer (HIL), an electron transport layer (ETL), and an electron injection layer (EIL) in addition to the organic emission layer.

[0063] Figure 3 is along Figure 1 A cross-sectional view taken along line II-II'. Figure 3 The structure of the substrate 100 is described in detail (specifically, Figure 1 peripheral area PA) and those not in Figure 2 The settings described in Figure 2 The encapsulation layer 500 is on the display layer 300.

[0064] First, according to an embodiment, the substrate 100 includes a first substrate 101 , a first inorganic layer 102 , a second substrate 103 , and a second inorganic layer 104 , which are sequentially stacked.

[0065] According to an embodiment, the first substrate 101 and the second substrate 103 are made of a main component such as SiO 2 The first substrate 101 and the second substrate 103 are formed of a transparent glass material. However, the first substrate 101 and the second substrate 103 are not limited thereto, but may be formed of a transparent plastic material. The plastic material may be polyethersulfone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyallylate, polyimide, polycarbonate (PC), cellulose triacetate (TAC), or cellulose acetate propionate (CAP).

[0066] According to an embodiment, the first substrate 101 and the second substrate 103 may have the same or different thicknesses. For example, each of the first substrate 101 and the second substrate 103 includes polyimide and has a thickness of about 3 μm to about 20 μm.

[0067] According to an embodiment, the first inorganic layer 102 and the second inorganic layer 104 function as a barrier layer to prevent the intrusion of external foreign matter, and may include a material such as silicon nitride (SiN x ) or silicon oxide (SiO x ) of a single layer or multiple layers of an inorganic material. Each of the first inorganic layer 102 and the second inorganic layer 104 has a thickness from about 4000 Å to about 7000 Å, but the embodiments of the present disclosure are not limited thereto.

[0068] According to an embodiment, Figure 1 The display device 10 includes an encapsulation layer 500, the encapsulation layer 500 covers Figure 2 The display layer 300 protects the display element 310 from external moisture or oxygen. The electrode power supply line 410 electrically connected to the second electrode 315 is provided at Figure 1 In the peripheral area PA.

[0069] According to an embodiment, the electrode power supply line 410 is formed simultaneously with other conductive layers of the display area AA and is formed of the same material as other conductive layers of the display area AA. Figure 2 The source electrode 215a and the drain electrode 215b are formed together and are disposed on the interlayer insulating layer 131. However, the embodiments of the present disclosure are not limited thereto, but can be variously modified. For example, the electrode power supply line 410 can be formed simultaneously with the gate electrode 213 on the gate insulating layer 121 from the same material as the gate electrode 213.

[0070] According to an embodiment, the electrode power supply line 410 may be directly connected to the second electrode 315, or as Figure 3As shown in FIG. 1 , the protective conductive layer 420 may be electrically connected to the second electrode 315 via the protective conductive layer 420 disposed on the planarization layer 140. In other words, the protective conductive layer 420 extends over the electrode power supply line 410 to be electrically connected to the electrode power supply line 410. The protective conductive layer 420 is formed of the same material as the first electrode 311 at the same time as the first electrode 311 on the planarization layer 140.

[0071] According to an embodiment, in order to prevent foreign substances such as oxygen or moisture from leaking into the display area AA through the planarization layer 140, as shown in FIG. Figure 3 As shown in FIG. 1 , the planarization layer 140 has an opening 140 b in the peripheral area PA. In addition, when the protective conductive layer 420 is formed, the protective conductive layer 420 fills the opening 140 b. Therefore, it is possible to effectively prevent foreign matter that would otherwise have leaked into the planarization layer 140 in the peripheral area PA from leaking into the planarization layer 140 in the display area AA.

[0072] According to embodiments, the opening 140b of the planarization layer 140 may have various shapes. For example, the opening 140b in the planarization layer 140 is a channel that continuously surrounds the display area AA along the edge of the display area AA outside the display area AA. The opening 140b may include a plurality of channels 140b that continuously surround the display area AA.

[0073] According to an embodiment, a capping layer 160 that improves the efficiency of light generated by an organic light emitting diode is disposed on the second electrode 315. The capping layer 160 covers the second electrode 315 and extends beyond the second electrode 315 such that an end of the capping layer 160 is disposed on the planarization layer 140. The capping layer 160 includes an organic material.

[0074] According to an embodiment, the encapsulation layer 500 is disposed on the capping layer 160. The encapsulation layer 500 protects the organic light emitting diode from moisture or oxygen. To this end, the encapsulation layer 500 extends not only over the display area AA where the organic light emitting diode is located, but also over the peripheral area PA outside the display area AA. Figure 3 As shown in FIG. 5 , the encapsulation layer 500 has a multi-layer structure. In detail, the encapsulation layer 500 includes a first inorganic encapsulation layer 510, an organic encapsulation layer 520, and a second inorganic encapsulation layer 530, which are sequentially stacked.

[0075] According to an embodiment, the first inorganic encapsulating layer 510 covers the capping layer 160 and includes silicon oxide, silicon nitride, or silicon oxynitride. The first inorganic encapsulating layer 510 is formed along the underlying structure.

[0076] According to an embodiment, the organic encapsulation layer 520 covers the first inorganic encapsulation layer 510 and has a thickness sufficient to substantially planarize an upper surface of the organic encapsulation layer 520. The organic encapsulation layer 520 includes at least one of polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, and hexamethyldisiloxane.

[0077] According to an embodiment, the second inorganic encapsulation layer 530 covers the organic encapsulation layer 520 and includes silicon oxide, silicon nitride, or silicon oxynitride. The first inorganic encapsulation layer 510 and the second inorganic encapsulation layer 530 each have an area larger than that of the organic encapsulation layer 520, and contact each other outside the organic encapsulation layer 520. In other words, the first inorganic encapsulation layer 510 and the second inorganic encapsulation layer 530 prevent the organic encapsulation layer 520 from being exposed to the outside.

[0078] As such, according to the embodiment, since the encapsulation layer 500 has a multilayer structure of the first inorganic encapsulation layer 510, the organic encapsulation layer 520, and the second inorganic encapsulation layer 530, even when cracks are generated in the encapsulation layer 500, the cracks do not extend into the first inorganic encapsulation layer 510 or the second inorganic encapsulation layer 530. Therefore, the formation of a path through which external moisture or oxygen may leak into the display area AA may be prevented or reduced.

[0079] According to an embodiment, in the process of forming the encapsulation layer 500 as above, the structure below the encapsulation layer 500 may be damaged. For example, if the first inorganic encapsulation layer 510 is formed by a chemical vapor deposition method, the layer directly below the first inorganic encapsulation layer 510 may be damaged. Therefore, when the first inorganic encapsulation layer 510 is directly formed on the capping layer 160, the capping layer 160 may be damaged, which may reduce the light efficiency of the display device. Therefore, in order to prevent the capping layer 160 from being damaged when the encapsulation layer 500 is formed, a protective layer is provided between the capping layer 160 and the encapsulation layer 500. The protective layer includes LiF.

[0080] In detail, according to an embodiment, when the encapsulation layer 500 is formed, the material used to form the organic encapsulation layer 520 is limited to be located in a preset area. Figure 3 As shown in FIG. 1 , the first dam 610 is disposed in the peripheral area PA, spaced apart from the planarization layer 140 .

[0081] According to an embodiment, the first dam 610 has a multi-layer structure. For example, the first dam 610 has a structure in which a first layer 611, a second layer 613, and a third layer 615 are sequentially stacked. The first layer 611 is formed of the same material as the planarization layer 140 at the same time as the planarization layer 140, and the second layer 613 is formed of the same material as the pixel definition layer 150 at the same time as the pixel definition layer 150. The third layer 615 may be additionally formed of the same material as the second layer 613 on the second layer 613.

[0082] According to an embodiment, the first dam 610 supports a mask used in a manufacturing process to form an intermediate layer 313 or a second electrode 315 of an organic light emitting diode or to form a cap layer 160. In this process, the first dam 610 prevents the pre-formed constituent elements from contacting and damaging the mask. In addition, when the organic encapsulation layer 520 is formed on the first inorganic encapsulation layer 510, the first dam 610 prevents the material used to form the organic encapsulation layer 520 from flowing toward the edge of the substrate 100. In addition, since the first dam 610 is separated from the planarization layer 140, external moisture can be prevented from leaking into the display area AA along the planarization layer 140.

[0083] According to the embodiment, Figure 3 As shown in FIG. 5 , the first inorganic encapsulating layer 510 and the second inorganic encapsulating layer 530 extend to the outside of the first dam 610 by covering the first dam 610 , thereby further effectively preventing the leakage of external moisture and oxygen.

[0084] According to an embodiment, a second dam 620 is further formed on the inner side of the first dam 610. The second dam 620 is disposed on the protective conductive layer 420 on the electrode power supply line 410. The second dam 620 includes a lower layer 623 and an upper layer 625 and has a height lower than that of the first dam 610, the lower layer 623 being formed simultaneously with the second layer 613 of the same material as the second layer 613 of the first dam 610, and the upper layer 625 being disposed on the lower layer 623 and being formed of the same material as the third layer 615 of the first dam 610.

[0085] Figure 4 yes Figure 1 An enlarged schematic plan view of portion A of FIG. Figure 5 is along Figure 4 A cross-sectional view taken along line III-III'. Figure 6 is along Figure 4 A cross-sectional view taken along line VI-VI'. Figure 7 It is shown that the formation Figure 4 A cross-sectional view of the groove method. Figure 8 is along Figure 4 Another cross-sectional view taken along line III-III'.

[0086] First, according to the embodiment, referring to Figures 4 to 6 , the hole H formed in the display area AA penetrates the substrate 100, the circuit layer CL, and the display layer 300. In addition, at least two grooves G1 and G2 are formed near and around the hole H. The at least two grooves G1 and G2 extend from the display layer 300 into the substrate 100. In the following description, the at least two grooves G1 and G2 are referred to as the first groove G1 and the second groove G2, depending on which of the at least two grooves G1 and G2 is closer to the hole H. In other words, the groove closest to the hole H is referred to as the first groove G1. Although Figure 4 An example in which two grooves G1 and G2 surround the hole H is shown, but the embodiments of the present disclosure are not limited thereto, and three or more grooves may be formed.

[0087] According to an embodiment, the first groove G1 surrounds the hole H at a position separated from the hole H. The first groove G1 has an undercut structure. For example, the first groove G1 is formed by removing a portion of the second inorganic layer 104 and the second substrate 103 of the substrate 100. In this state, the second inorganic layer 104 includes a pair of first tips T1 facing each other and extending toward each other in the open upper end of the first groove G1. In other words, the width of the upper end of the first groove G1 is smaller than the width of the inside or bottom of the first groove G1. The width of the first groove G1 represents a distance measured in a direction perpendicular to the length direction of the first groove G1. For example, when the first groove G1 has a circular shape, the width of the first groove G1 is along the radial direction of the circle perpendicular to the circumferential direction of the circle.

[0088] According to an embodiment, the pair of first tips T1 is composed of Figure 7 In detail, after the second inorganic layer 104 is patterned to form an opening, a laser beam (such as Figure 7 ), to remove the second substrate 103. Optionally, dry etching is performed. Then, the second substrate 103 is removed so that the bottom of the first groove G1 is larger than the opening of the second inorganic layer 104, and the opening pattern of the second inorganic layer 104 constitutes the pair of first tips T1.

[0089] As such, according to the embodiment, when the display element 310 is formed at the location where the pair of first tips T1 are formed, due to the undercut structure defined by the pair of first tips T1, the various organic layers included in the display element 310 are not formed on the inner wall surface of the first groove G1, and the various organic layers included in the display element 310 are formed only on a partial area of ​​the surface of the bottom of the first groove G1. Therefore, the various organic layers included in the display layer 300 are disconnected, and thus external moisture or oxygen passing through the hole H can be prevented from leaking into the display area AA along the various organic layers in the display element 310.

[0090] According to an embodiment, the second groove G2 surrounds the first groove G1 in an area separated from the first groove G1. The first groove G1 and the second groove G2 may be concentric with respect to the center of the hole H. The basic configuration of the second groove G2 is the same as that of the first groove G1. In other words, the second groove G2 has an undercut structure including a pair of second tips T2, and therefore, the width of the upper end portion of the second groove G2 is smaller than the width of the lower end portion of the second groove G2. Unlike the first tips T1, the second tips T2 of the second groove G2 are not completely separated from each other along the entire circumferential direction of the second groove G2. In other words, while the first tips T1 are separated from each other throughout the entire circumferential direction of the first groove G1, portions of the second tips T2 along the circumferential direction of the second groove G2 are connected to each other by the bridge B.

[0091] According to an embodiment, the bridge member B improves the mechanical strength of the second tip T2 by partially connecting the second tip T2. Therefore, even when an impact acts on the second tip T2, damage to the second tip T2 can be prevented, and thus cracks can be prevented from forming in the first inorganic encapsulation layer 510 of the encapsulation layer 500. The bridge member B includes a plurality of bridge members, and the plurality of bridge members B are spaced apart at regular intervals or irregular intervals in the circumferential direction of the second groove G2. The bridge member B is formed integrally with the second tip T2. On the contrary, since the first groove G1 is positioned closest to the hole H, if the first tip T1 is connected by the bridge member B, the display element 310 will be formed on the bridge member B, and thus a continuous organic layer will be formed. Therefore, the first tips T1 are spaced apart from each other along the entire circumferential direction.

[0092] According to the embodiment, although the display element 310 is not formed on the inner wall surface of the first groove G1 and the second groove G2 due to the undercut structure of the first groove G1 and the second groove G2, since the first inorganic encapsulation layer 510 of the encapsulation layer 500 is formed to be conformal, the first inorganic encapsulation layer 510 is formed not only on the inner wall surface of the first groove G1 and the second groove G2, but also on the lower surface of the first tip T1 and the second tip T2. In other words, the first inorganic encapsulation layer 510 is continuously formed without interruption.

[0093] According to the embodiment, Figure 6 As shown in , the first inorganic encapsulation layer 510 is formed on the lower surface of the bridge B. To this end, the width of the bridge B is less than or equal to twice the length of the second tip T2. The width of the bridge B represents the width along the circumferential direction of the second groove G2, and the length of the second tip T2 represents the length along the radial direction of the second groove G2. Since the first inorganic encapsulation layer 510 is formed even on the lower surface of the bridge B, the first inorganic encapsulation layer 510 is prevented from being partially disconnected on the lower surface of the bridge B.

[0094] According to an embodiment, the organic encapsulation layer 520 fills the inside of the second groove G2. In other words, when the organic encapsulation layer 520 is formed, the material used to form the organic encapsulation layer 520 fills the inside of the second groove G2 and prevents it from overflowing outside the second groove G2. In other words, since the second groove G2 divides the area in which the organic encapsulation layer 520 is formed, the first dam 610 can be omitted, and thus the non-display area around the hole H can be reduced.

[0095] According to an embodiment, the second inorganic encapsulating layer 530 is formed similarly to the first inorganic encapsulating layer 510. Therefore, the second inorganic encapsulating layer 530 and the first inorganic encapsulating layer 510 contact each other in the first groove G1 closest to the hole H, thereby preventing the intrusion of external moisture and oxygen.

[0096] According to the embodiment, Figure 8 As shown in FIG. 1 , the first inorganic encapsulating layer 510 and the second inorganic encapsulating layer 530 extend to the inner wall of the hole H and contact the side surface of the substrate 100. Therefore, the intrusion of external moisture and oxygen can be effectively prevented.

[0097] As described above, according to the above-described embodiment, a plurality of grooves are formed around the penetration portion in which a separate member such as a camera is disposed, and intrusion of external moisture through the penetration portion can be prevented.

[0098] Furthermore, since a pair of tip portions facing each other and forming the upper end of the opening of each of the plurality of grooves are partially connected to each other by the bridge, the mechanical strength of the tip portions is improved, and thus damage to the encapsulation layer can be prevented.

[0099] The scope of the present disclosure is not limited by the above-mentioned effects.

[0100] It should be understood that the embodiments described herein should be considered only as descriptive and not for purposes of limitation. Descriptions of features or aspects in each embodiment should generally be considered to be available for other similar features or aspects in other embodiments.

[0101] Although one or more embodiments have been described with reference to the drawings, people skilled in the art will understand that various changes in form and details may be made therein without departing from the spirit and scope as defined by the claims.

Claims

1. A display device, comprising: substrate; A circuit layer, located on the substrate; A display element, located on the circuit layer, the display element comprising a first electrode, a second electrode and an intermediate layer located between the first electrode and the second electrode; An encapsulation layer, located on the display element, the encapsulation layer comprising a first inorganic encapsulation layer, a second inorganic encapsulation layer, and an organic encapsulation layer located between the first inorganic encapsulation layer and the second inorganic encapsulation layer; a hole, located in the display area of ​​the substrate, and the hole penetrates the substrate; as well as A first groove and a second groove are located between the hole and the display area, the first groove and the second groove surround the hole, and each of the first groove and the second groove has an undercut structure. The substrate includes a first substrate, a first inorganic layer, a second substrate and a second inorganic layer which are sequentially stacked. Each of the first groove and the second groove extends downward from the second inorganic layer into the second substrate, The second groove is disposed between the first groove and the display element, and The organic encapsulating layer extends to the second groove, and a portion of the organic encapsulating layer at least partially fills the second groove.

2. The display device according to claim 1, wherein: The second inorganic layer includes a pair of first tips extending to the first groove, wherein the pair of first tips face each other to form the undercut structure, and The second inorganic layer includes a pair of second tips extending to the second groove, wherein the pair of second tips face each other to form the undercut structure.

3. The display device according to claim 2, wherein: The second inorganic layer further includes a bridge connecting the pair of second tips to each other along a portion of the second groove, wherein the bridge is integrally formed with the pair of second tips.

4. The display device according to claim 1, wherein: The first inorganic encapsulation layer overlaps bottom surfaces and inner wall surfaces of the first and second grooves.

5. The display device according to claim 4, wherein: The first inorganic encapsulation layer covers the lower surface of the bridge.

6. The display device according to claim 1, wherein: The second inorganic encapsulating layer and the first inorganic encapsulating layer contact each other in the first groove.

7. The display device according to claim 1, wherein: The intermediate layer includes an organic emission layer and at least one of a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer.

8. The display device according to claim 1, wherein: The circuit layer includes a thin film transistor, and the display element is electrically connected to the thin film transistor.

9. The display device according to claim 1, wherein: An edge of the organic encapsulation layer is disposed between the hole and the second groove.

10. A display device, comprising: A through hole located in the display area; A display element is arranged in the display area, the display element comprising a first electrode, a second electrode and an intermediate layer located between the first electrode and the second electrode; A first groove is arranged between the through hole and the display area and surrounds the through hole; as well as a second groove, arranged between the first groove and the display area and surrounding the first groove, wherein each of the first groove and the second groove is defined in a multi-layer structure, the multi-layer structure comprising a first layer, a second layer located on the first layer, and a third layer located on the second layer; and Wherein, each of the first groove and the second groove extends in a direction from the third layer downward to the second layer.

11. The display device according to claim 10, wherein: The first layer includes a material different from that of the first layer, and the third layer includes a material different from the material of the second layer.

12. The display device according to claim 11, wherein: In each of the first groove and the second groove, the third layer includes a pair of tips protruding laterally from the second layer.

13. The display device according to claim 10, further comprising an encapsulation layer covering the display element, in, The encapsulation layer includes an organic encapsulation layer at least partially filling the second groove.

14. The display device according to claim 13, wherein: An edge of the organic encapsulation layer is disposed between the through hole and the second groove.

15. The display device according to claim 13, wherein: The encapsulation layer further includes a first inorganic encapsulation layer and a second inorganic encapsulation layer respectively disposed below and above the organic encapsulation layer, and The first inorganic encapsulation layer continuously extends onto a bottom surface and an inner wall surface of each of the first groove and the second groove.

16. The display device according to claim 15, wherein: The second inorganic encapsulating layer contacts an upper surface of the first inorganic encapsulating layer in a region between the through hole and the first groove.

17. The display device according to claim 10, wherein: The intermediate layer is discontinuously arranged on a bottom surface and an inner wall surface of each of the first groove and the second groove.

18. The display device according to claim 17, wherein: The intermediate layer includes an organic emission layer and at least one of a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer.

19. The display device according to claim 10, wherein: The second electrode is discontinuously arranged on a bottom surface and an inner wall surface of each of the first groove and the second groove.

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