Modeling method, device, computer equipment, storage medium and program product

Abstract

The present invention relates to the field of electronic optics technology, and discloses a modeling method, device, computer equipment, storage medium and program product. The method is applied to electronic optical elements, including: dividing the two-dimensional structure diagram of the electronic optical element into main grids, batch-acquiring the coordinates of all main grid line intersections, sorting the coordinates of all main grid line intersections, and generating an initial model according to the sorting result; determining the key areas and non-key areas in the initial model, and determining the sub-grid size of the key area and the sub-grid size of the non-key area; dividing the initial model into sub-grids according to the sub-grid size of the key area and the non-key area, determining the main grid line number and its corresponding material parameters describing the structure and electromagnetic characteristics of the electronic optical element, and other excitation conditions, and obtaining the target model; the change multiple of the sub-grid size in adjacent main grids is less than or equal to a preset threshold. The technical solution based on the present invention can achieve rapid modeling.

Description

Technical Field

[0001] The present invention relates to the field of electronic optics technology, and in particular to a modeling method, an apparatus, a computer device, a storage medium and a program product. Background Art

[0002] The scanning electron microscope is a large-scale precision instrument used for high-resolution micro-area morphology analysis. It has the advantages of high-resolution imaging, a wide range of continuously adjustable magnification, and is widely used in nanomaterial technology, life sciences and other fields. However, the precision processing of the scanning electron microscope is time-consuming and labor-intensive, and the processing and testing costs of a complete set of equipment are too high. Therefore, before performing scanning electron microscope processing, the entire electron optical path needs to be modeled and simulated. Currently, the main software on the market that can perform charged particle optical simulation is MEBS. However, there is no open interface between the MEBS software and the mature mechanical drawing software on the market. It is impossible to directly import the geometric model established in AutoCAD like Simion, EOD and other software to achieve rapid modeling of the model.

[0003] Therefore, it is urgent to design a technical solution that can quickly convert the geometric model into an electronic optical model suitable for MEBS simulation. Summary of the invention

[0004] In view of this, the present invention provides a modeling method, apparatus, computer device, storage medium and program product to solve the problem in the related art that the geometric model cannot be directly imported into the MEBS simulation software.

[0005] In a first aspect, the present invention provides a modeling method applied to an electronic optical element, the modeling method comprising:

[0006] Performing main grid division on the two-dimensional structure diagram of the electronic optical element according to a preset division rule to obtain a main grid distribution diagram;

[0007] Batch obtain the coordinates of all main grid line intersections in the main grid distribution map;

[0008] Sorting the coordinates of all main grid line intersections in the main grid distribution map according to a preset sorting rule; the preset sorting rule includes a two-dimensional sorting rule;

[0009] Generate an initial model based on the sorting results;

[0010] Determine the key area and the non-key area in the initial model according to preset conditions, and determine the sub-grid size of the key area;

[0011] Determine the subgrid size of the non-critical area according to the subgrid size of the critical area;

[0012] The initial model is sub-grid-divided according to the sub-grid size of the critical area and the sub-grid size of the non-critical area, and the main grid line number and its corresponding material parameters, as well as other excitation conditions, which describe the structure and electromagnetic characteristics of the electronic optical element are determined to obtain a target model; the change multiple of the sub-grid size in adjacent main grids is less than or equal to a preset threshold; the target model is used to import the target software. In an optional embodiment, after obtaining the target model, the modeling method further includes: when the local structure of the electronic optical element changes, regenerating the target model based on the target model.

[0013] In an optional implementation, the main grid division of the two-dimensional structure diagram of the electronic optical element according to a preset division rule to obtain the main grid distribution diagram includes:

[0014] Use mechanical drawing software to draw two-dimensional structural diagrams of electron optical components;

[0015] Determine the calculation area according to the two-dimensional structure diagram of the electron optical element and the preset boundary conditions;

[0016] Determining a radial profile, an axial profile and an inflection point of the electron optical element in the calculation region;

[0017] Generate radial main grid lines based on the radial contour lines, generate axial main grid lines based on the axial contour lines, generate radial main grid lines and axial main grid lines at the inflection points, and obtain a main grid distribution diagram;

[0018] The radial main grid lines are parallel to the optical axis, or the axial main grid lines are perpendicular to the optical axis, or the radial main grid lines are parallel to the optical axis and the axial main grid lines are perpendicular to the optical axis.

[0019] In an optional implementation manner, determining the key area and the non-key area in the initial model according to preset conditions includes:

[0020] The key area in the initial model is determined according to the distribution of electromagnetic field equipotential lines or the optical axis corresponding to the initial model, and the area other than the key area is determined as a non-key area.

[0021] In an optional implementation, determining the subgrid size of the key area includes:

[0022] Determining the axial subgrid size and the radial subgrid size of the key area;

[0023] The determining the subgrid size of the non-critical area according to the subgrid size of the critical area comprises:

[0024] Determine the axial subgrid size of the non-critical area according to the axial subgrid size of the critical area;

[0025] The radial subgrid size of the non-critical area is determined according to the radial subgrid size of the critical area.

[0026] In an optional embodiment, determining the main grid line numbers describing the structure and electromagnetic properties of the electronic optical element includes:

[0027] Determine the axial main grid line number and the radial main grid line number;

[0028] The calculation formula for the axial major grid line number is:

[0029]

[0030] The calculation formula for the radial major grid line number is:

[0031]

[0032] Among them, J i Indicates the number of the i-th axial main grid line, z i Represents the axial coordinate of the intersection point on the i-th axial main grid line, dz i-1 represents the size of the axial subgrid in the i-1th axial main grid, I k Indicates the number of the kth radial main grid line, r k represents the radial coordinates of the intersection point on the kth radial main grid line, dr k-1 represents the radial subgrid size in the k-1th radial main grid, Indicates the round-up symbol.

[0033] In a second aspect, the present invention provides a modeling device, which is applied to an electronic optical element, and the modeling device comprises:

[0034] The first processing module is used to perform main grid division on the two-dimensional structure diagram of the electronic optical element according to a preset division rule to obtain a main grid distribution diagram; batch obtain the coordinates of all main grid line intersections in the main grid distribution diagram; sort the coordinates of all main grid line intersections in the main grid distribution diagram according to a preset sorting rule; the preset sorting rule includes a two-dimensional sorting rule; and generate an initial model according to the sorting result;

[0035] A second processing module is used to determine the key area and the non-key area in the initial model according to preset conditions, and determine the sub-grid size of the key area;

[0036] A third processing module, configured to determine the subgrid size of the non-critical area according to the subgrid size of the critical area;

[0037] The fourth processing module is used to sub-grid the initial model according to the sub-grid size of the key area and the sub-grid size of the non-key area, determine the main grid line number and its corresponding material parameters describing the structure and electromagnetic characteristics of the electronic optical element, and other excitation conditions, to obtain a target model; the change multiple of the sub-grid size in adjacent main grids is less than or equal to a preset threshold; the target model is used to import the target software.

[0038] In a third aspect, the present invention provides a computer device, comprising: a memory and a processor, the memory and the processor are communicatively connected to each other, computer instructions are stored in the memory, and the processor executes the modeling method of the first aspect or any corresponding embodiment thereof by executing the computer instructions.

[0039] In a fourth aspect, the present invention provides a computer-readable storage medium having computer instructions stored thereon, the computer instructions being used to enable a computer to execute the modeling method of the first aspect or any corresponding embodiment thereof.

[0040] In a fifth aspect, the present invention provides a computer program product, comprising computer instructions for causing a computer to execute the modeling method of the first aspect or any corresponding embodiment thereof.

[0041] The technical solution provided by the present invention has the following technical effects:

[0042] Based on the technical solution of the present invention, the main grid division is performed on the two-dimensional structure diagram of the electronic optical element through the preset division rule, which ensures that the grid processing of the two-dimensional structure diagram of the electronic optical element meets the design requirements and adapts to the accuracy standard of the finite element analysis. The coordinates of all the main grid line intersections obtained after the main grid division are automatically obtained in batches, which reduces the workload of manually inputting the corresponding structure and grid point coordinates and avoids the problem of input errors. The coordinates of all the main grid line intersections obtained after the main grid division are automatically sorted by using the two-dimensional sorting rule, which improves the efficiency of data processing, reduces human errors, and ensures the accuracy of model generation. The sub-grid size of the non-critical area is adaptively determined according to the sub-grid size of the critical area, which ensures the high-precision analysis of the model in the critical area, while maintaining the calculation efficiency in the non-critical area. During the sub-grid division process, the change multiples of the sub-grid size in the adjacent main grids are strictly controlled within the preset threshold, avoiding the calculation error caused by the sudden change of the factor grid size. The main grid line number and the corresponding material parameters describing the structure and electromagnetic characteristics of the electronic optical element are automatically determined, which simplifies the numbering process and improves the speed and accuracy of model establishment. The precise correspondence between the main grid line numbers and material parameters ensures that the simulation model can truly reflect the physical properties of the electron optical element. Based on the main grid line numbers and their corresponding material parameters that describe the structure and electromagnetic properties of the electron optical element, as well as other excitation conditions, the target model is generated, which facilitates the import into the target software and subsequent analysis. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the related technologies, the drawings required for use in the specific embodiments or the related technical descriptions will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0044] Figure 1 is a flow chart of a modeling method according to an embodiment of the present invention;

[0045] Figure 2 is a main grid distribution diagram according to an embodiment of the present invention;

[0046] Figure 3 is another main grid distribution diagram according to an embodiment of the present invention;

[0047] Figure 4 is a sub-grid distribution diagram according to an embodiment of the present invention;

[0048] Figure 5 is a distribution diagram of axial energy flux density B(z) according to an embodiment of the present invention;

[0049] Figure 6 is an energy flow distribution diagram according to an embodiment of the present invention;

[0050] Figure 7 (a) is an original two-dimensional structure diagram of the electron optical element according to an embodiment of the present invention, and (b) is a two-dimensional structure diagram of the electron optical element after the local structure is changed according to an embodiment of the present invention;

[0051] Figure 8 is a structural block diagram of a modeling device according to an embodiment of the present invention;

[0052] Fig. 9 It is a schematic diagram of the hardware structure of a computer device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0053] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0054] The scanning electron microscope is a large-scale precision instrument used for high-resolution micro-area morphology analysis. It has outstanding advantages such as high-resolution imaging, a wide range of magnifications, and continuous adjustment. It is widely used in the fields of nanomaterial technology and life sciences. However, the precision processing of the scanning electron microscope is time-consuming and labor-intensive, and the processing and testing costs of a complete set of equipment are too high. Therefore, before the scanning electron microscope is processed, the entire electron optical path needs to be modeled and simulated.

[0055] At present, the main software on the market that can perform charged particle optical simulation are MEBS, Simion and EOD. MEBS can perform two-dimensional simulation analysis on electron / ion sources, magnetic / electrostatic lenses, magnetic / electrostatic deflectors and electron / ion optical paths, calculate arbitrary order aberrations and draw beam spot distribution and electron trajectories. The simulation results are highly accurate. It can not only take into account the interaction between charges and relativistic effects, but also analyze the influence of mechanical processing and assembly errors of electron optical components on the electron optical properties of the light column. Simion is an electrostatic lens analysis simulation software, mainly used for the design of ion optical systems and ion beam equipment. Although it has magnetic field support functions, it cannot solve complex types of magnetic problems. Although EOD software can perform simulation analysis of magnetic / electrostatic lenses, magnetic / electrostatic deflectors and electron / ion optical paths, it is not as good as MEBS software in terms of error analysis, calculation accuracy and comprehensive functions. Therefore, mainstream electron optical simulation, especially electron optical simulation of scanning electron microscopes, is still dominated by MEBS software.

[0056] However, there is no open interface between MEBS software and mature mechanical drawing software on the market, such as SolidWorks and AutoCAD. It is impossible to directly import the geometric model established in AutoCAD like Simion, EOD and other software to realize real-time and rapid modification of the model, and it does not support the import of magnetic field results calculated by external programs. At present, when using MEBS software for electron-optical simulation, it is necessary to manually input the geometric parameters and finite element mesh of the electron-optical components. The whole process is not only time-consuming, but also prone to errors. Once the composite objective lens model is established, it will greatly increase the difficulty of modeling the electron-optical model.

[0057] Therefore, the embodiments of the present invention provide a modeling method, apparatus, computer device, storage medium and program product to solve the above problems.

[0058] According to an embodiment of the present invention, a modeling method embodiment is provided. It should be noted that the steps shown in the flowchart of the accompanying drawings can be executed in a computer system such as a set of computer executable instructions, and although a logical order is shown in the flowchart, in some cases, the steps shown or described can be executed in an order different from that shown here.

[0059] Figure 1 4 is a flow chart of a modeling method according to an embodiment of the present invention.

[0060] like Figure 1 As shown, a modeling method provided in an embodiment of the present invention is applied to an electronic optical element, and the modeling method includes:

[0061] S101: Performing main grid division on the two-dimensional structure diagram of the electronic optical element according to a preset division rule to obtain a main grid distribution map, batch acquiring the coordinates of all main grid line intersections in the main grid distribution map, sorting the coordinates of all main grid line intersections in the main grid distribution map according to a preset sorting rule, and generating an initial model according to the sorting result.

[0062] In this embodiment, the preset sorting rule includes a two-dimensional sorting rule.

[0063] In the present embodiment, as an example, the electron optical element is a rotationally symmetric single-element optical element.

[0064] In the embodiment of the present invention, taking the magnetic lens as an example, in S101, the two-dimensional structure diagram of the electronic optical element is divided into main grids according to the preset division rule, and the following is obtained: Figure 2 The main grid distribution diagram shown includes:

[0065] S1011: Use mechanical drawing software to draw a two-dimensional structure diagram of an electron optical component.

[0066] In this embodiment, the two-dimensional structure diagram of the electron optical element can be a geometric model of the electron optical element. The electron optical element is a structure that is rotationally symmetric about the optical axis. Therefore, the figure drawn by the mechanical drawing software is a part of the area of ​​the electron optical element. If the electron optical element is not only rotationally symmetric about the optical axis, but also symmetric about a plane perpendicular to the optical axis, only half of the rotationally symmetric structure can be drawn. The mechanical drawing software can specifically be commercial mechanical drawing software.

[0067] S1012: Determine a calculation area according to the two-dimensional structure diagram of the electronic optical element and preset boundary conditions.

[0068] In this embodiment, the calculation area can be obtained by expanding around the two-dimensional structure diagram of the electronic optical element according to preset boundary conditions.

[0069] S1013: Determine the radial contour line, axial contour line and inflection point of the electron optical element in the calculation area.

[0070] S1014: Generate radial main grid lines based on the radial contour lines, generate axial main grid lines based on the axial contour lines, generate radial main grid lines and axial main grid lines at the inflection point, and obtain a main grid distribution map.

[0071] In this embodiment, the radial main grid lines generated based on the radial contour lines may coincide with the radial contour lines. The axial main grid lines generated based on the axial contour lines may coincide with the axial contour lines. The inflection point is the intersection of the radial main grid lines and the axial main grid lines.

[0072] In this embodiment, the relationship between the positions of the radial main grid lines, the axial main grid lines and the optical axis is as follows:

[0073] The radial main grid lines are parallel to the optical axis, or the axial main grid lines are perpendicular to the optical axis, or the radial main grid lines are parallel to the optical axis and the axial main grid lines are perpendicular to the optical axis.

[0074] In this embodiment, only the relationship between the radial main grid lines and the optical axis can be restricted: all radial main grid lines are parallel to the optical axis, only the relationship between the axial main grid lines and the optical axis can be restricted: all axial main grid lines are perpendicular to the optical axis, and both the relationship between the radial main grid lines and the optical axis and the relationship between the axial main grid lines and the optical axis can be restricted: the radial main grid lines are parallel to the optical axis and the axial main grid lines are perpendicular to the optical axis. The radial main grid lines and the axial main grid lines form a quadrilateral, not other shapes, for example, the radial main grid lines and the axial main grid lines should not form a triangle.

[0075] In this embodiment, the relationship between the positions of the radial main grid lines, the axial main grid lines and the optical axis is only for the modeling scheme proposed in this embodiment. For the case of manually inputting model parameters, this condition can be ignored.

[0076] With respect to batch obtaining the coordinates of all main grid line intersections in the main grid distribution map in S101, in an embodiment of the present invention, the macro code of the mechanical drawing software can be used to batch export the coordinates of all main grid line intersections in the main grid distribution map through the API interface of the mechanical drawing software, so as to batch obtain the coordinates of all main grid line intersections in the main grid distribution map. The coordinates of all main grid line intersections in the exported main grid distribution map are unordered. As an example, the coordinates of all main grid line intersections in the main grid distribution map batch exported by the mechanical drawing software can be two-dimensional coordinates, and the coordinates of all main grid line intersections in the batch exported main grid distribution map are saved in an xlsx file in the form of (x, y, z). The exported original coordinates are denoted as co_ori, which is a three-dimensional array:

[0077]

[0078] Among them, co_ori represents the coordinates of the intersection points of all main grid lines in the main grid distribution diagram. Since the two-dimensional structure diagram of the electronic optical element is located in the xOy plane, all elements in the third column of co_ori (i.e., the z coordinate) are taken as 0.

[0079] With respect to the step of sorting the coordinates of all main grid line intersections in the main grid distribution map according to the preset sorting rule in S101, in an embodiment of the present invention, the step of sorting the coordinates of all main grid line intersections in the main grid distribution map according to the preset sorting rule (two-dimensional sorting rule) specifically includes:

[0080] The coordinates of all main grid line intersections in the main grid distribution map are converted into finite element grid intersection coordinates. According to the modeling requirements of the MEBS software, the derived two-dimensional coordinates are reordered using the two-dimensional sorting rules. Whether it is electrostatic or magnetic lens, the distribution of finite element grid intersection coordinates in its electron optical model complies with the following requirements:

[0081]

[0082] Among them, z is an m×n two-dimensional array, r is an m×n two-dimensional array, and z represents Figure 2 The axial coordinates of all the main grid line intersections in the grid, r represents Figure 2 The radial coordinates of all the main grid line intersections in z mn Represents a number, the subscripts of the elements correspond to the serial numbers of the radial and axial intersections, m represents the total number of intersections along the r direction (the total number of intersections in the radial direction), and n represents the total number of intersections along the z direction (the total number of intersections in the axial direction).

[0083] Taking the magnetic lens as an example, the preset sorting rules are as follows: All grid lines along the r direction in the figure (corresponding to numbers I1, I2, ... I m) is parallel to the z-axis, and all grid lines along the z-direction (corresponding numbers are J1, J2, ... J n ) is parallel to the r axis, therefore, the axial coordinates of all points on a single radial main grid line are the same, and the radial coordinates of all points on a single axial main grid line are the same, that is, each column element in the z and r arrays are the same. Extract the second column of data in co_ori, remove duplicates and arrange in descending order, you can get a column of elements in the r array, copy the column elements to n columns, you can get the r coordinates of all main grid line intersections. Then extract the coordinates of all main grid line intersections on each radial main grid line in turn, and arrange their axial coordinates in ascending order, you can get all the elements in the z array. If all the axial main grid lines along the z direction (corresponding numbers are J1, J2, ... J n ) is parallel to the r axis, then first extract the first column of data in co_ori, remove duplicates and arrange in ascending order to obtain a row of elements in the z array, copy the row of elements for m rows, and obtain the z coordinates of all the main grid line intersections. Then extract the coordinates of all the main grid line intersections on each axial main grid line in turn, and arrange their radial coordinates in descending order to obtain all the elements in the r array. In this embodiment, the preset sorting rules can be implemented by matlab programming, and can also be implemented in other programming languages.

[0084] The technical solution based on the present invention can directly export the coordinates of all main grid line intersections from commercial mechanical drawing software, which solves the problem that the electronic optical simulation software MEBS cannot be soft-connected with the existing commercial mechanical drawing software and requires manual input of structural parameters, resulting in human errors, thereby improving modeling accuracy.

[0085] S102: Determine the key area and the non-key area in the initial model according to preset conditions, and determine the sub-grid size of the key area.

[0086] In an embodiment of the present invention, determining the critical areas and non-critical areas in the initial model according to preset conditions in S102 specifically includes: determining the critical areas in the initial model according to the distribution of electromagnetic field equipotential lines or optical axes corresponding to the initial model, and determining areas other than the critical areas as non-critical areas.

[0087] In this embodiment, the staff will usually choose whether to determine the key area according to the distribution of electromagnetic field equipotential lines or according to the optical axis according to the type of electronic optical element and experience. The key area in the initial model can be determined according to the distribution of electromagnetic field equipotential lines corresponding to the initial model, and the dense distribution of electromagnetic field equipotential lines is determined as the key area. The key area in the initial model can also be determined according to the optical axis, and the area close to the optical axis is determined as the key area. The key area in the initial model can also be determined according to the distribution of electromagnetic field equipotential lines corresponding to the initial model and the optical axis. When the dense distribution of electromagnetic field equipotential lines and the area close to the optical axis are the same area, the area is determined as the key area.

[0088] In this embodiment, for commonly used electronic optical elements, such as magnetic lenses, the key area is generally the gap between the upper and lower pole shoes, close to the optical axis. Figure 3 The main grid lines J6 and J7, I6 and J 11 The enclosed area, for electrostatic lenses, the key areas are generally the area near the static electrode and the area near the optical axis.

[0089] Determining the subgrid size of the key area in S102 specifically includes: determining the axial subgrid size and the radial subgrid size of the key area.

[0090] S103: Determine the sub-grid size of the non-critical area according to the sub-grid size of the critical area.

[0091] In the embodiment of the present invention, S103 determines the subgrid size of the non-key area according to the subgrid size of the key area, specifically including:

[0092] The axial subgrid size of the non-critical area is determined according to the axial subgrid size of the critical area, and the radial subgrid size of the non-critical area is determined according to the radial subgrid size of the critical area.

[0093] S104: Sub-grid the initial model according to the sub-grid size of the critical area and the sub-grid size of the non-critical area, determine the main grid line number and its corresponding material parameters describing the structure and electromagnetic characteristics of the electronic optical element, and other excitation conditions, to obtain the target model.

[0094] In this embodiment, the target model is used to import the target software, and the change multiple of the sub-grid size in adjacent main grids is less than or equal to the preset threshold. As an example, the preset threshold can be set to 3 times, the sub-grid size in the same main grid is the same, and the sub-grid size of the key area is larger than the sub-grid size of the non-key area.

[0095] In this embodiment, the main grid line numbers include the numbers of the main grid lines describing the structure and electromagnetic properties of the electron optical element, and the numbers of the main grid lines describing the boundaries of the calculation area. Therefore, when determining the main grid line numbers describing the structure and electromagnetic properties of the electron optical element, it is also necessary to determine the main grid line numbers describing the boundaries of the calculation area. The main grid line numbers describing the structure and electromagnetic properties of the electron optical element are specifically the numbers of the two radial main grid lines and the two axial main grid lines describing the structure and electromagnetic properties of the electron optical element. As an example, Figure 3 The main grid line numbers J6, J7, I2 and J3 are specifically the numbers of two radial main grid lines and two axial main grid lines that describe the structure of the electronic optical element, and the main grid line numbers J1, J9 and I1, J 11 Specifically, it is the number of the main grid line that describes the boundary of the calculation area. In this embodiment, the main grid line number can also be used to describe the electromagnetic characteristics of the electronic optical element.

[0096] In this embodiment, based on the basic principles of finite element meshing, the sub-grid size required for the structural size and simulation accuracy of the adaptive electron optical element can be developed, and the main grid line number required for electron optical modeling can be automatically generated. The embodiment of the present invention takes into account that the finer the grid is, the higher the calculation accuracy is, but at the same time it occupies more computer memory and takes longer to calculate. Taking these two aspects into consideration, the present invention divides the grid into finer areas (such as areas where electromagnetic field equipotential lines are densely distributed or near the optical axis). As an example, if I1, I2, ... I m and J1, J2, … J n The MEBS software will further refine the calculation area according to the number of main grid lines. In the present invention, although it is not necessary to obtain a subgrid distribution map in practical applications, for the convenience of understanding, the initial model is sub-grid-divided according to the subgrid size of the key area and the subgrid size of the non-key area. Figure 4 The sub-grid distribution diagram is shown.

[0097] In the invention, to ensure the accuracy of electromagnetic calculation results, the change multiple of the subgrid size between adjacent subgrids should not exceed 3. Therefore, the subgrid size of the entire structure in the calculation area is determined by the subgrid size of the key area.

[0098] In the embodiment of the present invention, determining the main grid line number describing the structure and electromagnetic characteristics of the electronic optical element in S104 specifically includes:

[0099] The axial main grid line numbers describing the structure and electromagnetic characteristics of the electron optical element and the radial main grid line numbers describing the structure and electromagnetic characteristics of the electron optical element are determined.

[0100] The calculation formula for the axial major grid line number is:

[0101]

[0102] The calculation formula for the radial major grid line number is:

[0103]

[0104] Among them, J i Indicates the number of the i-th axial main grid line, z i Represents the axial coordinate of the intersection point on the i-th axial main grid line, dz i-1 represents the size of the axial subgrid in the i-1th axial main grid, I k Indicates the number of the kth radial main grid line, r k represents the radial coordinates of the intersection point on the kth radial main grid line, dr k-1 represents the radial subgrid size in the k-1th radial main grid, Indicates the round-up symbol.

[0105] In this embodiment, the main grid line numbers describing the structure and electromagnetic characteristics of the electron optical element can be automatically determined by the program.

[0106] Based on the technical solution of the present invention, the sub-grid density required for the structural size of the adaptive electron-optical element, the simulation accuracy, and the main grid line number required for electron-optical modeling can be automatically generated, avoiding the problem of low efficiency in setting the main grid line number due to different grid density requirements in different areas, and improving the modeling efficiency.

[0107] As an example, a procedure to automatically generate major gridline numbers works like this:

[0108] Will Figure 2 The total number of intersections m in the r direction in the main grid distribution diagram shown is taken as the total number of radial main grid lines m. Figure 2 The total number n of intersection points in the z direction in the main grid distribution diagram shown is used as the total number n of axial main grid lines.

[0109] It is known that m radial main grid lines correspond to m-1 radial main grid gaps. Let the sub-grid width in the radial main grid gap formed by two adjacent radial main grid lines be dr i (i=1,2,…m-1). Similarly, n axial main grid lines correspond to n-1 axial main grid gaps. Let the sub-grid width in the axial main grid gap formed by two adjacent axial main grid lines be dz j (j=1,2,…n-1). The key region in the entire calculation area is always composed of the form (J A ,J B ,I C,I D ) of the radial and axial main grid line numbers, where J A <J B , I C D , BA≥1, DC≥1. Therefore, for the actual structure, once the sub-grid size of the critical area is determined, the sub-grid size of its adjacent non-critical area can be given in turn. For the radial main grid, let the radial sub-grid size of the critical area be dr C ,dr C+1 ,…dr D-2 ,dr D-1 , the radial subgrid size of the adjacent non-critical area is set to:

[0110] Radial subgrid size for upper non-critical region:

[0111] dr C-1 =k C-1 dr C

[0112] …

[0113] dr2=k2dr3

[0114] dr1=k1dr2

[0115] Radial subgrid size in critical areas:

[0116] dr C =k C dr C+1

[0117] dr C+1 =k C+1 dr C+2

[0118] …

[0119] dr D-1 =k D-1 dr D-2

[0120] Radial subgrid size for the lower non-critical area:

[0121] dr D =k D dr D-1

[0122] dr D+1 =k D+1 dr D

[0123] …

[0124] dr m-1 =k​m-1 dr m-2

[0125] Among them, k i (i=1,2,…m-1) is the multiple of the sub-grid size change between adjacent sub-grids, 1≤k i ≤3. Once the radial subgrid size of the critical area is determined to be dr C ,dr C+1 ,…dr D-2 ,dr D-1 And the change factor k i , the main grid line numbers can be automatically generated. The radial main grid line numbers and axial main grid line numbers are counted from 1, so all radial main grid line numbers are expressed as:

[0126] I1=1

[0127]

[0128] in, Indicates the rounding symbol. Since the key area is usually closer to z=0, r1, r2, …, r m Generally, the radial coordinates of the intersection points on the radial main grid lines near z=0 are taken.

[0129] Similarly, the axial main grid line number can be automatically generated according to the above principle. Assume that the axial sub-grid size of the key area is dz A ,dr A+1 ,…dr B-2 ,dr B-1 , the axial subgrid size of the adjacent non-critical area is set to:

[0130] Axial subgrid size for the non-critical area on the left:

[0131] dz A-1 =k A-1 dz A

[0132] …

[0133] dz2=k2dz3

[0134] dz1=k1dz2

[0135] Axial subgrid size in key area:

[0136] dz A =k A dz A+1

[0137] dz A+1 =k A+1 dz A+2

[0138] …

[0139] dz B-1 =k B-1 dz B-2

[0140] Axial subgrid size for the non-critical area on the right:

[0141] dz B =k B dr B-1

[0142] dz B+1 =k B+1 dz B

[0143] …

[0144] dz n-1 =k n-1 dz n-2

[0145] Therefore, all axial main grid line numbers are expressed as:

[0146] J1=1

[0147]

[0148] In the above formula, z1,z2,…,z n Generally, the axial coordinate z of the intersection point on the main grid line r = 0 is taken m1 ,z m2 ,…,z mn .

[0149] Based on the technical solution of the present invention, when performing finite element meshing, even if the subgrid size changes, according to the calculation formula of the radial main grid line number and the axial main grid line number, when the main grid line index number (the subscript of the main grid line number) does not change, it can still be determined as follows: Figure 3 The boundaries of the calculation area, the radial contour lines, axial contour lines of the electron optical element and the main grid lines corresponding to the inflection points are shown.

[0150] In this embodiment, the main grid line numbers describing the structure and electromagnetic properties of the electron optical element, the material parameters corresponding to the main grid line numbers describing the structure and electromagnetic properties of the electron optical element, and other excitation conditions are determined to obtain the target model. As an example, the target software is MEBS software, and the target model is calculated by MEBS software.

[0151] In this embodiment, the material parameters corresponding to the main grid line numbers describing the structure and electromagnetic characteristics of the electronic optical element can be input according to the mechanical structure and material of the electronic optical element. Taking the magnetic lens as an example, the magnetic circuit structure determined by the main grid line numbers is:

[0152]

[0153] Among them, μ ri (i=1,2,…,5) represents the relative magnetic permeability of the ferromagnetic material, J Ai and J Bi are the left and right axial main grid line numbers corresponding to a certain area of ​​the magnetic circuit, I Ai and I Bi The upper and lower radial main grid line numbers corresponding to a certain area of ​​the magnetic circuit are respectively. In S104, all material parameters can be manually input according to the structure of the electronic optical element. Since the basic structures of known electronic optical elements are similar, the workload of inputting this part of data is not large and it is not easy to make mistakes.

[0154] In this embodiment, the simulation conditions can be determined according to the magnetic excitation or boundary potential of the electron optical element, the material parameters corresponding to the main grid line number describing the structure and electromagnetic characteristics of the electron optical element, and other excitation conditions. The line package corresponding to the magnetic lens is [J4 J6 I4 I5 AJi], where AJi is the ampere-turns of the line package per unit surface. The axial energy flux density B(z) is distributed as follows Figure 5 As shown, the energy flow distribution is Figure 6 shown.

[0155] In an optional embodiment, after obtaining the target model, the modeling method further comprises: when the local structure of the electronic optical element changes, regenerating the target model based on the target model. When the entire structure of the electronic optical element changes, regenerating the target model based on the technical solutions of S101-S104 above.

[0156] In this embodiment, when the local structure of the electronic optical element changes, the target model is regenerated based on the target model, which specifically includes: saving the target model, and when the local structure of the electronic optical element changes, based on the target model, re-executing S101-S103, and part of the technical solution of S104. Part of the technical solution of S104 includes: sub-gridding the initial model according to the sub-grid size of the critical area and the sub-grid size of the non-critical area, and determining the main grid line number describing the structure and electromagnetic properties of the electronic optical element to regenerate a new target model. The structural dimensions can be updated without changing the overall structural form, and a new target model file can be automatically generated. There is no need to redetermine the material parameters corresponding to the main grid line numbers describing the structure and electromagnetic properties of the electronic optical element, as well as other excitation conditions, so that fast simulation can be achieved. Still taking the magnetic lens as an example, modify Figure 7 The pole piece structure and size of the original two-dimensional structure diagram of the electron optical element shown in (a) are shown in FIG. 1 . The modified structure is shown in FIG. 1 . Figure 7 As shown in (b) in the figure, the sub-grid division method and the main grid line number generation method remain unchanged.

[0157] Since the main grid line numbers of the parts other than the changed local structure remain unchanged, the previous target model file can be retained. On the basis of the previous target model file, the main grid line numbers corresponding to the changed local structure are obtained by re-executing S101-S103 and part of the technical solutions of S104. According to the material parameters in the previous target model and other excitation conditions, the electronic optical model of the magnetic lens after modifying the pole shoe structure can be quickly obtained. The whole process can be completed within 2 to 3 minutes, which greatly improves the optimization efficiency of the entire electronic optical path.

[0158] Based on the technical solution of the present invention, when the overall mechanical structure remains unchanged and only the local structural parameters are updated, even if the main grid line number changes, the structural materials defined by the main grid line number and the simulation conditions (potential boundary or magnetic excitation) related to the main grid line number do not need to be reset, which greatly improves the optimization efficiency of the electronic optical structure parameters.

[0159] The modeling method provided in the embodiment of the present invention is specifically a modeling method for MEBS electronic optical simulation. Based on the technical solution of the present invention, the geometric model established in the mechanical drawing software can be quickly converted into an electronic optical model suitable for MEBS simulation, thereby improving the accuracy and efficiency of the electronic optical simulation. At the same time, the geometric model can be imported into the multi-physics field simulation software COMSOL to be cross-validated with the physical field results of its simulation.

[0160] The technical solution of the present invention provides a fast modeling method suitable for MEBS electronic optical simulation, which can realize the connection between MEBS software and existing commercial mechanical drawing software, convert the geometric model drawn by the existing commercial mechanical drawing software into a geometric model suitable for MEBS simulation, and avoid the problems of large workload and easy errors caused by manual input. The structural dimensions of the adaptive electronic optical element, the sub-grid density required for simulation accuracy and the main grid line number required for electronic optical modeling can be automatically generated. When the overall mechanical structure remains unchanged and only the local structural parameters are optimized, it is not necessary to reset the material parameters of the structure of the electronic optical element and the simulation conditions (potential boundary or magnetic excitation) related to the main grid line number, which greatly improves the optimization efficiency of the electronic optical structural parameters.

[0161] The key point of the present invention is: automatically batch generate the coordinates of all main grid line intersections used to describe the electronic optical structure and the main grid distribution map, reduce the workload of manually inputting the corresponding structure and grid point coordinates, and avoid the problem of input errors. The main grid line number of the MEBS simulation model is adaptively generated. MEBS uses the finite element method based on the variational principle to calculate the electromagnetic field distribution of the rotationally symmetric structure. For MEBS, the software requires that the radial main grid line and the axial main grid line coincide with the contour line of the electronic optical element, and requires the grid line to be as parallel or perpendicular to the optical axis (i.e., the rotational symmetry axis) as possible. The area formed by the radial main grid line and the axial main grid line must be a quadrilateral rather than a triangle. Therefore, once the electronic optical element and the corresponding calculation area are determined, the position of its main grid is clear to a certain extent. The present invention needs to further refine the calculation area, sub-grid the initial model according to the sub-grid size of the key area and the sub-grid size of the non-key area, set the appropriate sub-grid size, and then determine the main grid line number describing the structure and electromagnetic characteristics of the electronic optical element. When only the local structure size changes, only the number of subgrids and the value of the main grid line number change, but the main grid line index number (the subscript of the main grid line number) that defines the structure and electromagnetic properties of the electron optical element does not change. Therefore, the optimized main grid line number can be generated quickly without repeating the technical solutions for determining material parameters and other excitation conditions, which greatly improves the efficiency of model optimization.

[0162] It should be noted that the contents not described in detail in the specification of the present invention belong to the common knowledge of those skilled in the art.

[0163] In the present embodiment, a modeling device is also provided, which is used to implement the above-mentioned embodiment and optional implementation methods, and the descriptions that have been made will not be repeated. As used below, the term "module" can implement a combination of software and / or hardware of a predetermined function. Although the device described in the following embodiments is preferably implemented in software, the implementation of hardware, or a combination of software and hardware is also possible and conceived.

[0164] Figure 8 is a structural block diagram of a modeling device according to an embodiment of the present invention.

[0165] This embodiment provides a modeling device, which is applied to electronic optical elements, such as Figure 8 As shown, the modeling device includes:

[0166] The first processing module 11 is used to perform main grid division on the two-dimensional structure diagram of the electronic optical element according to a preset division rule to obtain a main grid distribution diagram. The coordinates of all main grid line intersections in the main grid distribution diagram are obtained in batches. The coordinates of all main grid line intersections in the main grid distribution diagram are sorted according to a preset sorting rule. The preset sorting rule includes a two-dimensional sorting rule. An initial model is generated according to the sorting result.

[0167] The second processing module 12 is used to determine the key area and the non-key area in the initial model according to preset conditions, and determine the sub-grid size of the key area.

[0168] The third processing module 13 is used to determine the sub-grid size of the non-key area according to the sub-grid size of the key area.

[0169] The fourth processing module 14 is used to sub-grid the initial model according to the sub-grid size of the critical area and the sub-grid size of the non-critical area, determine the main grid line number and its corresponding material parameters describing the structure and electromagnetic characteristics of the electronic optical element, and other excitation conditions, to obtain a target model; the change multiple of the sub-grid size in adjacent main grids is less than or equal to a preset threshold; the target model is used to import the target software.

[0170] In an optional implementation, the modeling device further includes: an update optimization module.

[0171] The updating optimization module is used to regenerate the target model based on the target model when the local structure of the electronic optical element changes after the target model is obtained.

[0172] In an optional implementation, the first processing module 11 is specifically configured to draw a two-dimensional structure diagram of the electronic optical element using mechanical drawing software.

[0173] The calculation area is determined according to the two-dimensional structure diagram of the electron optical element and the preset boundary conditions.

[0174] The radial contour line, axial contour line and inflection point of the electron optical element in the calculation area are determined.

[0175] Radial main grid lines are generated based on radial contour lines, and axial main grid lines are generated based on axial contour lines. At the inflection point, radial main grid lines and axial main grid lines are generated to obtain a main grid distribution diagram.

[0176] The radial main grid lines are parallel to the optical axis, or the axial main grid lines are perpendicular to the optical axis, or the radial main grid lines are parallel to the optical axis and the axial main grid lines are perpendicular to the optical axis.

[0177] In an optional embodiment, the second processing module 12 includes a first processing unit.

[0178] The first processing unit is used to determine the key area in the initial model according to the distribution of electromagnetic field equipotential lines or the optical axis corresponding to the initial model, and determine the area other than the key area as a non-key area.

[0179] In an optional implementation, the second processing module 12 further includes a second processing unit.

[0180] The second processing unit is used to determine the axial sub-grid size and the radial sub-grid size of the key area.

[0181] In an optional implementation, the third processing module 13 is specifically configured to determine the axial subgrid size of the non-critical area according to the axial subgrid size of the critical area.

[0182] The radial subgrid size of the non-critical area is determined according to the radial subgrid size of the critical area.

[0183] In an optional implementation, the fifth processing module 15 is specifically configured to determine the axial main grid line numbers and the radial main grid line numbers.

[0184] The calculation formula for the axial major grid line number is:

[0185]

[0186] The calculation formula for the radial major grid line number is:

[0187]

[0188] Among them, J i Indicates the number of the i-th axial main grid line, z i Represents the axial coordinate of the intersection point on the i-th axial main grid line, dz i-1 represents the size of the axial subgrid in the i-1th axial main grid, I kIndicates the number of the kth radial main grid line, r k represents the radial coordinates of the intersection point on the kth radial main grid line, dr k-1 Represents the radial subgrid size in the k-1th radial main grid.

[0189] The further functional description of each of the above modules and units is the same as that of the above corresponding embodiments and will not be repeated here.

[0190] The modeling device in this embodiment is presented in the form of a functional unit, where the unit refers to an ASIC (Application Specific Integrated Circuit) circuit, a processor and memory that executes one or more software or fixed programs, and / or other devices that can provide the above functions.

[0191] The embodiment of the present invention also provides a computer device having the above Figure 8 The modeling device shown.

[0192] See also Fig. 9 , Fig. 9 Schematic diagram of the hardware structure of the computer device according to the embodiment of the present invention. Fig. 9 As shown, the computer device includes: one or more processors 10, a memory 20, and interfaces for connecting various components, including high-speed interfaces and low-speed interfaces. The various components are connected to each other using different buses for communication, and can be installed on a common motherboard or installed in other ways as needed. The processor can process instructions executed in the computer device, including instructions stored in or on the memory to display graphical information of the GUI on an external input / output device (such as a display device coupled to the interface).

[0193] In an optional embodiment, if desired, multiple processors and / or multiple buses can be used together with multiple memories and multiple memories. Similarly, multiple computer devices can be connected, each device providing part of the necessary operations (e.g., as a server array, a group of blade servers, or a multi-processor system). Fig. 9 A processor 10 is taken as an example.

[0194] The processor 10 may be a central processing unit, a network processor or a combination thereof. The processor 10 may further include a hardware chip. The hardware chip may be a dedicated integrated circuit, a programmable logic device or a combination thereof. The programmable logic device may be a complex programmable logic device, a field programmable gate array, a general purpose array logic or any combination thereof.

[0195] The memory 20 stores instructions executable by at least one processor 10, so that at least one processor 10 executes the method shown in the above embodiment.

[0196] The memory 20 may include a program storage area and a data storage area, wherein the program storage area may store an operating system, an application required for at least one function. The data storage area may store data created according to the use of the computer device, etc. In addition, the memory 20 may include a high-speed random access memory, and may also include a non-transient memory, such as at least one disk storage device, a flash memory device, or other non-transient solid-state storage devices. In an optional embodiment, the memory 20 may optionally include a memory remotely arranged relative to the processor 10, and these remote memories may be connected to the computer device via a network. Examples of the above-mentioned network include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and combinations thereof.

[0197] The memory 20 may include a volatile memory, such as a random access memory. The memory may also include a non-volatile memory, such as a flash memory, a hard disk or a solid state drive. The memory 20 may also include a combination of the above-mentioned types of memory.

[0198] The computer device further comprises a communication interface 30 for the computer device to communicate with other devices or a communication network.

[0199] The embodiment of the present invention also provides a computer-readable storage medium. The method according to the embodiment of the present invention can be implemented in hardware, firmware, or can be implemented as a computer code that can be recorded in a storage medium, or can be implemented as a computer code that is originally stored in a remote storage medium or a non-temporary machine-readable storage medium and will be stored in a local storage medium through a network download, so that the method described herein can be stored in such software processing on a storage medium using a general-purpose computer, a dedicated processor, or programmable or dedicated hardware. Among them, the storage medium can be a disk, an optical disk, a read-only storage memory, a random access memory, a flash memory, a hard disk or a solid-state hard disk, etc. Further, the storage medium can also include a combination of the above-mentioned types of memories. It can be understood that a computer, a processor, a microprocessor controller, or programmable hardware includes a storage component that can store or receive software or computer code. When the software or computer code is accessed and executed by a computer, a processor, or hardware, the method shown in the above embodiment is implemented.

[0200] A part of the present invention may be applied as a computer program product, such as a computer program instruction, which, when executed by a computer, can call or provide the method and / or technical solution according to the present invention through the operation of the computer. Those skilled in the art should understand that the existence of the computer program instruction in a computer-readable medium includes, but is not limited to, a source file, an executable file, an installation package file, etc., and accordingly, the way in which the computer program instruction is executed by the computer includes, but is not limited to: the computer directly executes the instruction, or the computer compiles the instruction and then executes the corresponding compiled program, or the computer reads and executes the instruction, or the computer reads and installs the instruction and then executes the corresponding installed program. Here, the computer-readable medium may be any available computer-readable storage medium or communication medium accessible to the computer.

[0201] Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the present invention, and such modifications and variations are all within the scope defined by the appended claims.

Claims

1. A modeling method, applied to an electronic optical element, characterized in that: The modeling method comprises: Performing main grid division on the two-dimensional structure diagram of the electronic optical element according to a preset division rule to obtain a main grid distribution diagram; Batch obtain the coordinates of all main grid line intersections in the main grid distribution map; Sorting the coordinates of all main grid line intersections in the main grid distribution map according to a preset sorting rule; the preset sorting rule includes a two-dimensional sorting rule; Generate an initial model based on the sorting results; Determine the key area and the non-key area in the initial model according to preset conditions, and determine the sub-grid size of the key area; Determine the subgrid size of the non-critical area according to the subgrid size of the critical area; The initial model is sub-grid-divided according to the sub-grid size of the critical area and the sub-grid size of the non-critical area, and the main grid line number and its corresponding material parameters describing the structure and electromagnetic characteristics of the electronic optical element, as well as other excitation conditions, are determined to obtain a target model; the change multiple of the sub-grid size in adjacent main grids is less than or equal to a preset threshold; and the target model is used to import into the target software.

2. The method according to claim 1, characterized in that: After obtaining the target model, the modeling method further comprises: when the local structure of the electronic optical element changes, regenerating the target model based on the target model.

3. The method according to claim 1, characterized in that The method of dividing the two-dimensional structure diagram of the electronic optical element into main grids according to a preset division rule to obtain a main grid distribution diagram includes: Use mechanical drawing software to draw two-dimensional structural diagrams of electron optical components; Determine the calculation area according to the two-dimensional structure diagram of the electron optical element and the preset boundary conditions; Determining a radial profile, an axial profile and an inflection point of the electron optical element in the calculation region; Generate radial main grid lines based on the radial contour lines, generate axial main grid lines based on the axial contour lines, generate radial main grid lines and axial main grid lines at the inflection points, and obtain a main grid distribution diagram; The radial main grid lines are parallel to the optical axis, or the axial main grid lines are perpendicular to the optical axis, or the radial main grid lines are parallel to the optical axis and the axial main grid lines are perpendicular to the optical axis.

4. The method according to claim 1, characterized in that Determining the key area and the non-key area in the initial model according to the preset conditions includes: The key area in the initial model is determined according to the distribution of electromagnetic field equipotential lines or the optical axis corresponding to the initial model, and the area other than the key area is determined as a non-key area.

5. The method according to claim 1, characterized in that: The determining of the sub-grid size of the key area comprises: Determining the axial subgrid size and the radial subgrid size of the key area; The determining the subgrid size of the non-critical area according to the subgrid size of the critical area comprises: Determine the axial subgrid size of the non-critical area according to the axial subgrid size of the critical area; The radial subgrid size of the non-critical area is determined according to the radial subgrid size of the critical area.

6. The method according to claim 5, characterized in that Determining the main grid line numbers describing the structure and electromagnetic characteristics of the electronic optical element includes: Determine the axial main grid line number and the radial main grid line number; The calculation formula for the axial major grid line number is: The calculation formula for the radial major grid line number is: Among them, J i Indicates the number of the i-th axial main grid line, z i Represents the axial coordinate of the intersection point on the i-th axial main grid line, dz i-1 represents the size of the axial subgrid in the i-1th axial main grid, I k Indicates the number of the kth radial main grid line, r k represents the radial coordinates of the intersection point on the kth radial main grid line, dr k-1 represents the radial subgrid size in the k-1th radial main grid, Indicates the round-up symbol.

7. A modeling device, applied to electronic optical elements, characterized in that: The modeling device comprises: The first processing module is used to perform main grid division on the two-dimensional structure diagram of the electronic optical element according to a preset division rule to obtain a main grid distribution diagram; batch obtain the coordinates of all main grid line intersections in the main grid distribution diagram; sort the coordinates of all main grid line intersections in the main grid distribution diagram according to a preset sorting rule; the preset sorting rule includes a two-dimensional sorting rule; and generate an initial model according to the sorting result; A second processing module is used to determine the key area and the non-key area in the initial model according to preset conditions, and determine the sub-grid size of the key area; A third processing module, configured to determine the subgrid size of the non-critical area according to the subgrid size of the critical area; The fourth processing module is used to sub-grid the initial model according to the sub-grid size of the key area and the sub-grid size of the non-key area, determine the main grid line number and its corresponding material parameters describing the structure and electromagnetic characteristics of the electronic optical element, and other excitation conditions, to obtain a target model; the change multiple of the sub-grid size in adjacent main grids is less than or equal to a preset threshold; the target model is used to import the target software.

8. A computer device, characterized in that: include: A memory and a processor, wherein the memory and the processor are communicatively connected to each other, the memory stores computer instructions, and the processor executes the steps of the modeling method according to any one of claims 1 to 6 by executing the computer instructions.

9. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer instructions, and the computer instructions are used to enable a computer to execute the steps of the modeling method according to any one of claims 1 to 6.

10. A computer program product, characterized in that The method comprises computer instructions for causing a computer to execute the steps of the modeling method according to any one of claims 1 to 6.

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